TW202209420A - 成膜裝置及成膜方法 - Google Patents

成膜裝置及成膜方法 Download PDF

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TW202209420A
TW202209420A TW110119362A TW110119362A TW202209420A TW 202209420 A TW202209420 A TW 202209420A TW 110119362 A TW110119362 A TW 110119362A TW 110119362 A TW110119362 A TW 110119362A TW 202209420 A TW202209420 A TW 202209420A
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film
gas
raw material
substrate
forming
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反田雄太
斉藤哲也
大倉成幸
古屋雄一
原正道
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日商東京威力科創股份有限公司
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Abstract

[課題] 提供一種可進行抑制了微粒之影響的成膜之成膜裝置及成膜方法。 [解決手段] 在基板形成膜之成膜裝置，係具有：腔室；基板載置台，被設置於腔室內，載置基板，並且將基板保持於成膜溫度；氣體供給部，供給包含有成膜原料氣體的氣體；氣體吐出構件，與基板載置台對向設置，具有吐出包含有從氣體供給部所供給的成膜原料氣體之氣體的氣體吐出區域；及過濾器，被設成為至少覆蓋氣體吐出構件之與基板載置台對向面的相反側之面的氣體吐出區域，使包含有成膜原料氣體之氣體通過，捕獲其中的微粒。

Description

成膜裝置及成膜方法
本揭示，係關於成膜裝置及成膜方法。
作為在基板上形成膜之技術，存在有「將原料氣體供給至基板上，藉由熱分解或反應氣體之反應進行膜形成」的化學蒸鍍(CVD)法。當於常溫下使用固體原料且藉由CVD法進行成膜的情況下，係供給使原料氣化而生成的原料氣體來進行成膜。例如在專利文獻1，係記載有如下述技術：於常溫下，使固體之Ru3 (CO)12 在容器內氣化，將氣體狀的Ru3 (CO)12 供給至腔室內並使其在基板上熱分解而形成Ru膜。 [先前技術文獻] [專利文獻]
[專利文獻1]日本特開2015-160963號公報
[本發明所欲解決之課題]
本揭示，係提供一種可進行抑制了微粒的影響之成膜的成膜裝置及成膜方法。 [用以解決課題之手段]
本揭示之一態樣的成膜裝置，係在基板形成膜，該成膜裝置，其特徵係，具有：腔室；基板載置台，被設置於腔室內，載置基板，並且將基板保持於成膜溫度；氣體供給部，供給包含有成膜原料氣體的氣體；氣體吐出構件，與前述基板載置台對向設置，具有吐出包含有從前述氣體供給部所供給的前述成膜原料氣體之氣體的氣體吐出區域；及過濾器，被設成為至少覆蓋前述氣體吐出構件之與前述基板載置台對向面的相反側之面的氣體吐出區域，使包含有前述成膜原料氣體之氣體通過，捕獲其中的微粒。 [發明之效果]
根據本揭示，提供一種可進行抑制了微粒之影響的成膜之成膜裝置及成膜方法。
以下，參閱附加圖面，具體地說明關於實施形態。 圖1，係表示一實施形態之成膜裝置的剖面圖。
成膜裝置100，係具有被構成為氣密之大致圓筒狀的腔室1，在其中，係藉由腔室1之底壁中央所設置的圓筒狀之支撐構件3，支撐配置有作為水平地載置半導體晶圓等的基板W之基座2。在基座2，係埋入有加熱器5，該加熱器5，係藉由從加熱器電源6所供電的方式而發熱，加熱基座2。而且，藉由基座2，基板W被加熱至所期望的溫度。此時之基座2的加熱溫度，係基於熱電偶等的溫度感測器(未圖示)之檢測值，以後述的控制部50來予以控制。亦即，基座2，係具有將基板W保持於成膜溫度的功能。另外，在基座2，係設置有可相對於基座2之表面突出/沒入的複數個晶圓升降銷(未圖示)，該複數個晶圓升降銷，係用以支撐晶圓W並使其升降。
在腔室1之頂壁(LID)，係以與基座2對向的方式，設置有噴頭10，該噴頭10，係用以將成膜用之處理氣體噴淋狀地導入至腔室1內。噴頭10之詳細內容，係如後述。
在腔室1之底壁，係設置有朝向下方突出的排氣室21。在排氣室21之側面，係連接有排氣配管22，在該排氣配管22，係連接有排氣裝置23，該排氣裝置23，係具有真空泵或自動壓力控制閥等。而且，藉由使該排氣裝置23動作的方式，可將腔室1內控制成預先設定的真空壓力。
在腔室1之側壁，係設置有用以在與真空搬送室(未圖示)之間搬入搬出晶圓W的搬入搬出口27，搬入搬出口27，係藉由閘閥28來進行開關。
又，成膜裝置100，係具有：氣體供給部30，將包含有成膜原料氣體的氣體供給至噴頭10。氣體供給部30，係具有：成膜原料容器31，收容常溫下為固體狀的成膜原料S。作為常溫下為固體狀的成膜原料，係例如雖可使用十二羰基三釕(Ru3 (CO)12 )，但並不限於Ru3 (CO)12 ，只要是在80℃下之蒸氣壓為0.1~100Pa，則亦可為其他成膜原料。作為像這樣的原料，係例如可列舉出六羰鎢(W(CO)6 )。
在成膜原料容器31之周圍，係設置有加熱器32，被構成為使成膜原料容器31內之固體狀的成膜原料S昇華。在成膜原料S為Ru3 (CO)12 的情況下，Ru3 (CO)12 ，係被加熱至可昇華的80℃左右(例如60~100℃)。在成膜原料容器31，係插入有從上方供給載體氣體的載體氣體供給配管33。在載體氣體供給配管33，係連接有供給載體氣體的載體氣體供給源34。作為載體氣體，係例如可使用Ar氣體、N2 氣體等惰性氣體。又，在固體原料為如Ru3 (CO)12 般的羰基(carbonyl)的情況下，係為了抑制分解，亦可使用CO氣體。
又，在成膜原料容器31，係插入有成膜原料氣體供給配管35。該成膜原料氣體供給配管35，係被連接於噴頭10。因此，載體氣體經由載體氣體供給配管33被吹入成膜原料容器31內，藉此，在成膜原料容器31內，固體狀的成膜原料S昇華而生成之原料氣體會被搬送至成膜原料氣體供給配管35。而且，搬送至成膜原料氣體供給配管35之原料氣體，係經由噴頭10被供給至腔室1內。
在載體氣體供給配管33，係設置有流量控制用之質流控制器36與其前後的閥37a、37b。又，在成膜原料氣體供給配管35，係設置有閥39a、39b。
成膜裝置100，係更具有控制部50。控制部50，係控制成膜裝置100的各構成部，例如排氣裝置23、氣體供給部30的閥、質流控制器。
其次，詳細地說明噴頭10。 圖2，係放大表示成膜裝置100的噴頭10之部分的剖面圖。如圖2所示般，噴頭10，係具有：本體11，有頂棚且呈下部被開放的圓筒狀；及噴淋板12，被設置為堵塞本體11之下部開口，並具有複數個氣體吐出孔13。又，氣體吐出孔13，係只要具有吐出氣體的功能，則形狀沒有限定，可包含圓形的孔或被形成為狹縫狀的孔。噴淋板12，係構成氣體吐出構件，該氣體吐出構件，係吐出包含有來自氣體供給部30之成膜原料氣體的氣體。又，在本體11之上部中央，係設置有氣體導入口14，本體11與噴淋板12之間的空間，係成為氣體擴散空間15。
在氣體擴散空間15，係從上方依序水平地設置有：第1擋板16，在外周部具有環狀的貫通孔16a；及第2擋板17，在中央部具有圓形的貫通口17a。
在第2擋板17之正下方，係水平地設置有過濾器18。過濾器18，係呈圓板狀，以至少覆蓋形成有氣體吐出孔13之氣體吐出區域的方式，被設置於噴淋板12之與基座2對向面的相反側之面。過濾器18之端部，係被嵌入於本體11的側壁。在過濾器18之外周，係設置有外周框體18a，外周框體18a，係被其下方之噴淋板12的框體12a所支撐。過濾器18，係具有去除從氣體導入口14所導入的氣體中之微粒成分的功能。
過濾器18，係例如由如圖3之照片所示般的使用了金屬纖維之金屬網所構成。作為金屬網，係可列舉出層積金屬纖維的不織布並燒結者。
又，作為過濾器18，係具有原料氣體對基板W的供給量不會不足之程度的傳導度者為較佳，可使用「適當地調整壓力損失或空隙率等的其他參數，以便獲得適當之傳導度」者。
而且，作為過濾器18，係能使用可適當地供給原料氣體之程度的厚度者，例如可使用0.3~0.5mm之範圍的厚度者。
再者，過濾器18，係以可確實地捕獲噴頭10內所生成之微粒的方式，儘可能地接近噴淋板12為較佳，且亦可與其接觸。但是，在過濾器18與噴淋板12接觸的情況下，係除了與過濾器18之氣體吐出孔13接觸的部分以外，幾乎不具有作為過濾器的功能。因此，過濾器18，係與噴淋板12分離3~6mm為較佳，以便其整面可具有作為過濾器的功能。
在腔室1之頂壁(LID)上，係設置有LID加熱器19，LID加熱器19，係被構成為藉由從加熱器電源20所供電的方式而發熱，加熱噴頭10。此時之加熱溫度，係以控制部50來予以控制。LID加熱器19的熱，係被構成為經由噴淋板12之框體12a及外周框體18a被傳遞至過濾器18而亦加熱過濾器18。藉此，可使被過濾器18捕獲的微粒昇華。此時之溫度，係只要為可使成膜原料昇華的溫度即可，在成膜原料為Ru3 (CO)12 的情況下，係加熱溫度被設定為80℃左右。作為加熱器，係亦可為過濾器18之加熱專用者。
在像這樣所構成之成膜裝置100中，係使閘閥28成為開啟，將基板W從搬入搬出口27搬入至腔室1內，並載置於基座2上。基座2，係藉由加熱器5被加熱至所期望的成膜溫度。腔室1內，係在藉由排氣裝置23予以抽真空的狀態下，導入有惰性氣體，並經由惰性氣體加熱基板W。而且，藉由自動壓力控制閥，腔室1內被調節成所期望的壓力。此時之腔室內的壓力，係雖藉由成膜原料進行適當調整，但例如可使用0.013~133.3Pa(0.1mTorr~ 1Torr)的範圍。
其次，設成為「藉由加熱器32，將成膜原料容器31以成膜原料S的昇華溫度以上之溫度進行加熱」的狀態，並使閥37a、37b成為開啟，將載體氣體經由載體氣體供給配管33吹入成膜原料容器31。
藉此，在成膜原料容器31內，藉由加熱器32之加熱，固體狀的成膜原料S昇華而生成之成膜原料氣體例如Ru3 (CO)12 氣體會藉由載體氣體被搬送至成膜原料氣體供給配管35。而且，成膜原料氣體，係經由成膜原料氣體供給配管35被供給至噴頭10，並從噴頭10的氣體吐出孔13被吐出至腔室1內。吐出至腔室1之原料氣體，係在基座2所載置的基板W上被熱分解，並在基板W上形成所期望的膜。在使用了Ru3 (CO)12 氣體作為成膜原料氣體的情況下，係Ru3 (CO)12 氣體在基板W上熱分解而形成Ru膜。
成膜時之基座2的溫度(基板溫度)，係因應使用的成膜原料或欲形成的膜來適當設定。在本實施形態中，係由於藉由成膜原料氣體在基板上熱分解而成膜，因此，至少被設定為成膜原料氣體可熱分解的溫度。在使用了Ru3 (CO)12 氣體作為成膜原料氣體的情況下，成膜溫度，係可設成為100~300℃。
然而，視製程之狀況，雖有時被要求低溫成膜，但發現到在該情況下，係存在有基板W上之微粒變多的傾向。以使用Ru3 (CO)12 形成Ru膜的情形為例，在基座2之溫度為175℃時，係微粒較少，反觀當將基座2之溫度設成為155℃以下的低溫時，則微粒增加。而且，尤其是發現到，伴隨著基座2之溫度的低溫化，被認為Ru3 (CO)12 固化而生成者之纖維狀的微粒會增加。
亦即，原料氣體，係雖在基板W上被加熱而熱分解為止的期間必需保持為氣體狀態，但吾人認為，在低溫成膜的情況下，係在原料氣體到達基板W為止的期間，溫度降低並固化而成為微粒的主成分。
因此，在本實施形態中，係以覆蓋噴淋板12之氣體吐出區域的方式，在噴頭10之氣體擴散空間15設置過濾器18。藉此，在氣體擴散空間15內經由第1及第2擋板16、17之包含有成膜原料的氣體會通過過濾器18而微粒被過濾器18捕獲。因此，可抑制附著於基板W的微粒。過濾器18，係在成膜原料氣體固化而生成之微粒較多的低溫成膜時尤其有效。在成膜原料為Ru3 (CO)12 的情況下，係在成膜溫度為100~155℃之低溫時有效。
如上述般，過濾器18，係可確實地捕獲噴頭10內所生成之微粒，且從有效地發揮過濾器之功能的觀點來看，與氣體擴散空間15內之噴淋板12分離3~6mm左右為較佳。在噴淋板12之基板W側的區域中，係由於從基座2充分地供給熱而不會有原料氣體再固化之虞，因此，過濾器18，係不需設置於噴淋板12之基板W側。
又，過濾器18，係藉由LID加熱器19予以加熱，藉由LID加熱器19，將過濾器18加熱至比微粒之昇華溫度高的溫度，藉此，可使捕獲到的微粒昇華。藉此，由於可更確實地防止微粒到達基板W，並且微粒不會殘存於過濾器18，因此，不會產生過濾器18之堵塞。
其次，說明關於實証設置了過濾器18之效果的實驗結果。在此，係使用具有圖1之概略構成的成膜裝置且使用Ru3 (CO)12 作為成膜原料，將基座溫度設成為155℃並將過濾器之加熱溫度設成為80℃，在基板即半導體晶圓上進行Ru膜的形成。又，作為比較，使用從圖1之成膜裝置排除了過濾器的裝置且同樣地使用Ru3 (CO)12 作為成膜原料，相同地將基座溫度設成為155℃而進行了Ru膜的形成。作為半導體晶圓，係使用了表面為TaN者及Si者各2片合計4片。
在不使用過濾器的情況下，對於4片半導體晶圓，合計之微粒個數為179個，其中，氣體狀的Ru3 (CO)12 固化而形成之纖維狀的微粒為147個。對此，在使用了過濾器的情況下，對於4片半導體晶圓，合計之微粒個數為44個，其中，纖維狀的微粒為40個。
從該結果可確認到，藉由使用過濾器的方式，可大幅地降低總微粒之個數及氣體狀的Ru3 (CO)12 固化而形成之纖維狀的微粒之個數。關於微粒之主體即纖維狀微粒，係藉由使用過濾器的方式，降低了73%。
以上，雖說明了關於實施形態，但此次所揭示之實施形態，係所有的要點均為例示，不應被認為限制性之內容。上述實施形態，係亦可在不脫離添附之申請專利範圍及其主旨的情況下，以各種形態進行省略､置換､變更。
例如，在上述實施形態中，係雖表示了使用如Ru3 (CO)12 般的可藉由熱分解進行成膜者作為成膜原料之例子，但亦可為藉由與反應氣體的反應而進行膜形成者。
又，雖例示了圖1者作為成膜裝置，但只要為將成膜原料氣體從噴頭供給至基座上的基板而進行成膜者即可，又，噴頭亦只要具有所供給之成膜原料氣體通過過濾器的構造即可，並不限定於圖1之成膜裝置。
1:腔室 2:基座(基板載置台) 5:加熱器 10:噴頭 15:氣體擴散空間 18:過濾器 19:LID加熱器 23:排氣裝置 30:氣體供給部 31:成膜原料容器 35:成膜原料氣體供給配管 50:控制部 100:成膜裝置 W:基板
[圖1]表示一實施形態之成膜裝置的剖面圖。 [圖2]放大表示一實施形態之成膜裝置的噴頭之部分的剖面圖。 [圖3]表示使用了一實施形態之成膜裝置的過濾器之構造例的照片。
1:腔室
2:基座
3:支撐構件
5:加熱器
6:加熱器電源
10:噴頭
11:本體
12:噴淋板
12a:框體
13:氣體吐出孔
14:氣體導入口
15:氣體擴散空間
16:第1擋板
16a:貫通孔
17:第2擋板
17a:貫通口
18:過濾器
19:LID加熱器
20:加熱器電源
21:排氣室
22:排氣配管
23:排氣裝置
27:搬入搬出口
28:閘閥
30:氣體供給部
31:成膜原料容器
32:加熱器
33:載體氣體供給配管
34:載體氣體供給源
35:成膜原料氣體供給配管
36:質流控制器
37a:閥
37b:閥
39a:閥
39b:閥
50:控制部
100:成膜裝置
S:成膜原料
W:晶圓

Claims (10)

  1. 一種成膜裝置，係在基板形成膜，該成膜裝置，其特徵係，具有： 腔室； 基板載置台，被設置於腔室內，載置基板，並且將基板保持於成膜溫度； 氣體供給部，供給包含有成膜原料氣體的氣體； 氣體吐出構件，與前述基板載置台對向設置，具有吐出包含有從前述氣體供給部所供給的前述成膜原料氣體之氣體的氣體吐出區域；及 過濾器，被設成為至少覆蓋前述氣體吐出構件之與前述基板載置台對向面的相反側之面的氣體吐出區域，使包含有前述成膜原料氣體之氣體通過，捕獲其中的微粒。
  2. 如請求項1之成膜裝置，其中， 前述氣體吐出構件，係被構成為構成噴頭之具有複數個氣體吐出孔的噴淋板，前述氣體吐出構件，係被設置為堵塞前述噴頭之本體的下部開口，在前述本體與前述氣體吐出構件之間形成有氣體擴散空間，前述過濾器，係被設置於前述氣體擴散空間。
  3. 如請求項1或2之成膜裝置，其中， 前述過濾器，係被設置為接近或接觸前述氣體吐出構件。
  4. 如請求項3之成膜裝置，其中， 前述過濾器，係與前述氣體吐出構件分離3~6mm。
  5. 如請求項1~4中任一項之成膜裝置，其中， 前述過濾器，係由使用了金屬纖維的金屬網所構成。
  6. 如請求項1~5中任一項之成膜裝置，其中， 前述氣體供給部，係使常溫下為固體狀的成膜原料昇華而生成成膜原料氣體，前述微粒，係前述成膜原料氣體再固化而生成者。
  7. 如請求項6之成膜裝置，其中， 前述成膜原料，係Ru3 (CO)12 。
  8. 如請求項7之成膜裝置，其中， 前述基板載置台，係被保持於100~155℃之範圍的溫度。
  9. 如請求項6~8中任一項之成膜裝置，其中， 更具有：加熱器，加熱前述過濾器， 藉由前述加熱器來加熱前述過濾器，藉此，使前述成膜原料氣體再固化而生成的前述微粒昇華。
  10. 一種成膜方法，係在基板形成膜，該成膜方法，其特徵係，包含有： 準備一種如請求項1~9中任一項之成膜裝置； 將基板載置於前述基板載置台； 從前述氣體供給部朝向前述基板載置台上之基板供給包含有前述成膜原料氣體的氣體； 以使包含有前述成膜原料氣體的氣體在到達前述基板載置台上之基板之前通過前述過濾器的方式，捕獲包含有前述成膜原料氣體的氣體中之微粒；及 使用通過了前述過濾器之包含有前述成膜原料氣體的氣體，在基板上形成膜。
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