CN113774355A - 成膜装置和成膜方法 - Google Patents

成膜装置和成膜方法 Download PDF

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CN113774355A
CN113774355A CN202110614529.2A CN202110614529A CN113774355A CN 113774355 A CN113774355 A CN 113774355A CN 202110614529 A CN202110614529 A CN 202110614529A CN 113774355 A CN113774355 A CN 113774355A
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gas
film forming
film
substrate
filter
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反田雄太
齐藤哲也
大仓成幸
古屋雄一
原正道
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Tokyo Electron Ltd
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Abstract

本公开提供一种成膜装置和成膜方法，能够进行抑制了微粒的影响的成膜。在基板上形成膜的成膜装置具有：腔室；基板载置台，其设置于腔室内，载置基板并且将基板保持为成膜温度；气体供给部，其供给包含成膜原料气体的气体；气体喷出构件，其与基板载置台相向地设置，具有用于喷出从气体供给部供给的包含成膜原料气体的气体的气体喷出区；以及过滤器，其以覆盖气体喷出构件的同与基板载置台相向的相向面相反一侧的面的至少气体喷出区的方式设置，所述过滤器使包含成膜原料气体的气体通过来捕获包含成膜原料气体的气体中的微粒。

Description

成膜装置和成膜方法
技术领域
本公开涉及一种成膜装置和成膜方法。
背景技术
作为在基板上形成膜的技术，存在向基板上供给原料气体并通过使该原料气体热分解或者与反应气体之间进行反应来进行膜形成的化学蒸镀(CVD)法。在使用常温下为固体的原料并采用CVD法进行成膜的情况下，供给通过使原料气化而生成的原料气体来进行成膜。例如在专利文献1中记载有如下技术：使常温下为固体的Ru3(CO)12在容器内气化，将气体状的Ru3(CO)12供给到腔室内，使Ru3(CO)12在基板上热分解来形成Ru膜。
现有技术文献
专利文献
专利文献1：日本特开2015-160963号公报
发明内容
发明要解决的问题
本公开提供一种能够进行抑制了微粒的影响的成膜的成膜装置和成膜方法。
用于解决问题的方案
本公开的一个方式所涉及的成膜装置是在基板上形成膜的成膜装置，所述成膜装置具有：腔室；基板载置台，其设置于腔室内，载置基板并且将基板保持为成膜温度；气体供给部，其供给包含成膜原料气体的气体；气体喷出构件，其与所述基板载置台相向地设置，具有用于喷出从所述气体供给部供给的所述包含成膜原料气体的气体的气体喷出区；以及过滤器，其以覆盖所述气体喷出构件的同与所述基板载置台相向的相向面相反一侧的面的至少气体喷出区的方式设置，所述过滤器使包含所述成膜原料气体的气体通过来捕获该包含所述成膜原料气体的气体中的微粒。
发明的效果
根据本公开，提供一种能够进行抑制了微粒的影响的成膜的成膜装置和成膜方法。
附图说明
图1是示出一个实施方式所涉及的成膜装置的截面图。
图2是将一个实施方式所涉及的成膜装置的喷淋头的局部放大地示出的截面图。
图3是示出一个实施方式所涉及的成膜装置中使用的过滤器的构造例的照片。
附图标记说明
1：腔室；2：基座(基板载置台)；5：加热器；10：喷淋头；15：气体扩散空间；18：过滤器；19：LID加热器；23：排气装置；30：气体供给部；31：成膜原料容器；35：成膜原料气体供给配管；50：控制部；100：成膜装置；W：基板。
具体实施方式
下面，参照附图来具体地说明实施方式。
图1是示出一个实施方式所涉及的成膜装置的截面图。
成膜装置100具有气密地构成的大致圆筒状的腔室1，作为基板载置台的基座2以被圆筒状的支承构件3支承的方式配置在腔室1中，所述基座2将半导体晶圆等基板W水平地载置，所述支承构件3设置于腔室1的底壁中央。在基座2中埋入有加热器5，该加热器5通过被加热器电源6供电而发热，从而对基座2进行加热。而且，通过基座2将基板W加热为期望的温度。此时的基座2的加热温度由后述的控制部50基于热电偶等温度传感器(未图示)的检测值来控制。即，基座2具有将基板W保持为成膜温度的功能。此外，在基座2，以能够相对于基座2的表面突出和退回的方式设置有用于支承晶圆W并使其进行升降的多个晶圆升降销(未图示)。
在腔室1的顶壁(LID)，以与基座2相向的方式设置有用于向腔室1内喷淋状地导入用于成膜的处理气体的喷淋头10。在后文中叙述喷淋头10的详细情况。
在腔室1的底壁设置有朝向下方突出的排气室21。在排气室21的侧面连接有排气配管22，该排气配管22与具有真空泵、自动压力控制阀等的排气装置23连接。而且，通过使该排气装置23工作，能够将腔室1内控制为预先决定的真空压力。
在腔室1的侧壁设置有用于与真空搬送室(未图示)之间进行晶圆W的搬入和搬出的搬入搬出口27，利用闸阀28对搬入搬出口27进行打开和关闭。
另外，成膜装置100具有向喷淋头10供给包含成膜原料气体的气体的气体供给部30。气体供给部30具有用于收容常温下为固体状的成膜原料S的成膜原料容器31。作为常温下为固体状的成膜原料，例如能够使用十二羰基三钌(Ru3(CO)12)，但不限于Ru3(CO)12，只要是80℃下的蒸气压为0.1Pa～100Pa的成膜原料即可，也可以是其它的成膜原料。作为这样的原料，例如能够列举六羰基钨(W(CO)6)。
在成膜原料容器31的周围设置有加热器32，该加热器32构成为使成膜原料容器31内的固体状的成膜原料S升华。在成膜原料S为Ru3(CO)12的情况下，Ru3(CO)12被加热至能够升华的80℃左右(例如60℃～100℃)。从成膜原料容器31的上方向成膜原料容器31中插入有用于供给载气的载气供给配管33。载气供给配管33与用于供给载气的载气供给源34连接。作为载气，能够使用Ar气体、N2气体等非活性气体。另外，在固体原料为Ru3(CO)12那样的羰基的情况下，为了抑制分解，也可以使用CO气体。
另外，在成膜原料容器31中插入有成膜原料气体供给配管35。该成膜原料气体供给配管35与喷淋头10连接。因而，通过经由载气供给配管33向成膜原料容器31内吹入载气，来将在成膜原料容器31内固体状的成膜原料S升华而生成的原料气体搬送到成膜原料气体供给配管35。而且，被搬送到成膜原料气体供给配管35的原料气体经由喷淋头10被供给到腔室1内。
在载气供给配管33上设置有用于控制流量的质量流量控制器36和处于质量流量控制器36的前后的阀37a、37b。另外，在成膜原料气体供给配管35上设置有阀39a、39b。
成膜装置100还具有控制部50。控制部50控制成膜装置100的各构成部，例如排气装置23、气体供给部30的阀、质量流量控制器。
接着，详细地说明喷淋头10。
图2是将成膜装置100的喷淋头10的局部放大地示出的截面图。如图2所示，喷淋头10具有：呈圆筒状的主体11，其具有顶板且下部开放；以及喷淋板12，其具有多个气体喷出孔13，以堵塞主体11的下部开口的方式设置。此外，气体喷出孔13只要具有喷出气体的功能即可，对气体喷出孔13的形状没有限定，可以包括圆形的孔、形成为狭缝状的孔。喷淋板12构成用于喷出来自气体供给部30的包含成膜原料气体的气体的气体喷出构件。另外，在主体11的上部中央设置有气体导入口14，主体11与喷淋板12之间的空间成为气体扩散空间15。
在气体扩散空间15，从上到下依次水平地设置有第一挡板16和第二挡板17，在该第一挡板16的外周部具有环状的贯通孔16a，该第二挡板17在中央部具有圆形的贯通口17a。
在第二挡板17的正下方水平地设置有过滤器18。过滤器18呈圆板状，以覆盖喷淋板12的同与基座2相向的相向面相反一侧的面的至少形成有气体喷出孔13的气体喷出区的方式设置。过滤器18的端部被嵌入主体11的侧壁。在过滤器18的外周设置有外周框体18a，外周框体18a被其下方的喷淋板12的框体12a支承。过滤器18具有去除从气体导入口14导入的气体中的微粒成分的功能。
过滤器18例如由图3的照片所示那样的使用了金属纤维的金属网构成。作为金属网，能够列举将金属纤维的无纺布层叠并进行烧结而得到的金属网。
另外，作为过滤器18，优选具有不会使原料气体向基板W的供给量不足的程度的流导，使用适当地被调整了压力损失、空隙率等其它参数的过滤器以得到适当的流导。
并且，作为过滤器18，使用能够适当地供给原料气体的程度的厚度的过滤器，例如能够使用0.3mm～0.5mm的范围的厚度的过滤器。
另外，还优选过滤器18与喷淋板12极力接近，以能够可靠地捕获在喷淋头10内生成的微粒，也可以使过滤器18与喷淋板12接触。但是，在过滤器18与喷淋板12接触的情况下，过滤器18的除与气体喷出孔13接触的部分以外的部分几乎不作为过滤器发挥功能。因此，优选过滤器18与喷淋板12相隔3mm～6mm，以能够使过滤器18的整个面作为过滤器发挥功能。
在腔室1的顶壁(LID)设置有LID加热器19，LID加热器19构成为通过被加热器电源20供电而发热，从而对喷淋头10进行加热。此时的加热温度由控制部50来控制。构成为：LID加热器19的热经由喷淋板12的框体12a和外周框体18a被传递到过滤器18，使过滤器18也被加热。由此，能够使被过滤器18捕获的微粒升华。此时的温度只要是能够使成膜原料升华的温度即可，在成膜原料为Ru3(CO)12的情况下，加热温度被设定为80℃左右。作为加热器，也可以是过滤器18加热专用的加热器。
在像这样构成的成膜装置100中，将闸阀28打开来将基板W从搬入搬出口27搬入腔室1内，并载置到基座2上。通过加热器5将基座2加热至期望的成膜温度。在通过排气装置23对腔室1内进行了抽真空的状态下向腔室1内导入非活性气体，并经由非活性气体对基板W进行加热。而且，利用自动压力控制阀将腔室1内调整为期望的压力。根据成膜原料来适当地调整此时腔室内的压力，例如使用0.013Pa～133.3Pa(0.1mTorr～1Torr)的范围。
接着，设为利用加热器32以成膜原料S的升华温度以上的温度对成膜原料容器31进行了加热的状态，将阀37a、37b打开，来经由载气供给配管33向成膜原料容器31吹入载气。
由此，在成膜原料容器31内通过加热器32的加热使固体状的成膜原料S升华而生成的成膜原料气体、例如Ru3(CO)12气体通过载气被搬送到成膜原料气体供给配管35。而且，成膜原料气体经由成膜原料气体供给配管35被供给到喷淋头10，并从喷淋头10的气体喷出孔13被喷出到腔室1内。被喷出到腔室1的原料气体在被载置于基座2的基板W上被热分解，在基板W上形成期望的膜。在使用Ru3(CO)12气体来作为成膜原料气体的情况下，Ru3(CO)12气体在基板W上热分解而成膜出Ru膜。
根据所使用的成膜原料、想要成膜出的膜来适当地设定成膜时的基座2的温度(基板温度)。在本实施方式中，通过使成膜原料气体在基板上热分解来进行成膜，因此设定为至少能够使成膜原料气体热分解的温度。在使用Ru3(CO)12气体来作为成膜原料气体的情况下，成膜温度能够设为100℃～300℃。
另外，根据工艺的设定，有时要求低温成膜，但是明确了在该情况下存在基板W上的微粒增多的趋势。以使用Ru3(CO)12来进行Ru膜的成膜的情况为例，如果基座2的温度为175℃则微粒少，相对于此，当将基座2的温度设为155℃以下的低温时微粒增加。而且，特别是明确了，伴随基座2的温度的低温化，被认为是通过Ru3(CO)12固化而生成的纤维状的微粒增加。
即，在原料气体在基板W上被加热而热分解之前的期间，需要使原料气体保持为气体状态，但在低温成膜的情况下，在原料气体到达基板W之前的期间，原料气体因温度降低而固化，认为固化后的原料气体为微粒的主要成分。
因此，在本实施方式中，在喷淋头10的气体扩散空间15内以覆盖喷淋板12的气体喷出区的方式设置过滤器18。由此，在气体扩散空间15内经过了第一挡板16和第二挡板17的包含成膜原料的气体通过过滤器18，微粒被过滤器18捕获。因此，能够抑制微粒在基板W上的附着。在成膜原料气体固化而生成的微粒多的低温成膜的情况下，过滤器18尤为有效。在成膜原料为Ru3(CO)12的情况下，在成膜温度为100℃～155℃的低温的情况下是有效的。
如上所述，过滤器18能够可靠地捕获在喷淋头10内生成的微粒，从有效地发挥过滤器的功能的观点出发，优选过滤器18与气体扩散空间15内的喷淋板12相隔3mm～6mm左右。在喷淋板12的靠基板W侧的区域，被基座2充分地供给热，原料气体可能不会再次固化，因此无需在喷淋板12的靠基板W侧设置过滤器18。
另外，过滤器18被LID加热器19加热，通过利用LID加热器19将过滤器18加热至比微粒的升华温度高的温度，能够使被捕获的微粒升华。由此，能够更可靠地防止微粒到达基板W，并且由于过滤器18中不残留微粒，因此不发生过滤器18的堵塞。
接着，对证实设置了滤器18的效果的实验结果进行说明。此处，使用具有图1的概要结构的成膜装置，使用Ru3(CO)12来作为成膜原料，将基座温度设为155℃，将过滤器的加热温度设为80℃，来在作为基板的半导体晶圆上进行了Ru膜的成膜。另外，作为比较，使用从图1的成膜装置去除了过滤器的装置，同样使用Ru3(CO)12来作为成膜原料，同样将基座温度设为155℃，来进行Ru膜的成膜。共计使用了四张半导体晶圆，其中，两张表面为TaN的晶圆，两张表面为Si的晶圆。
在不使用过滤器的情况下，针对四张半导体晶圆，合计的微粒个数为179个，其中，气体状的Ru3(CO)12固化而形成的纤维状的微粒为147个。与此相对，在使用过滤器的情况下，针对四张半导体晶圆，合计的微粒个数为44个，其中，纤维状的微粒为40个。
根据该结果确认出，通过使用过滤器，能够大幅地降低总的微粒的个数以及气体状的Ru3(CO)12固化而形成的纤维状的微粒的个数。通过使用过滤器，使作为微粒的主体的纤维状微粒减少了73％。
以上说明了实施方式，应认为本次公开的实施方式在所有方面均为例示，而非限制性的。上述的实施方式在不脱离所附的权利要求书及其主旨的情况下能够以各种方式进行省略、置换、变更。
例如，在上述实施方式中示出了使用Ru3(CO)12这样的能够通过热分解进行成膜的物质来作为成膜原料的例子，但也可以是通过与反应气体之间进行反应来进行膜形成的物质。
另外，作为成膜装置例示了图1的装置，但只要是从喷淋头向基座上的基板供给成膜原料气体来进行成膜的装置即可，另外，喷淋头也只要具有使供给的成膜原料气体通过过滤器的构造即可，并不限定于图1的成膜装置。

Claims (10)

1.一种成膜装置，在基板上形成膜，所述成膜装置具有：
腔室；
基板载置台，其设置于腔室内，载置基板并且将基板保持为成膜温度；
气体供给部，其供给包含成膜原料气体的气体；
气体喷出构件，其与所述基板载置台相向地设置，具有用于喷出从所述气体供给部供给的所述包含成膜原料气体的气体的气体喷出区；以及
过滤器，其以覆盖所述气体喷出构件的同与所述基板载置台相向的相向面相反一侧的面的至少气体喷出区的方式设置，所述过滤器使所述包含成膜原料气体的气体通过来捕获该包含成膜原料气体的气体中的微粒。
2.根据权利要求1所述的成膜装置，其特征在于，
所述气体喷出构件构成为喷淋板，所述喷淋板构成喷淋头且具有多个气体喷出孔，所述气体喷出构件以堵塞所述喷淋头的主体的下部开口的方式设置，在所述主体与所述气体喷出构件之间形成有气体扩散空间，所述过滤器设置于所述气体扩散空间。
3.根据权利要求1或2所述的成膜装置，其特征在于，
所述过滤器以与所述气体喷出构件接近或接触的方式设置。
4.根据权利要求3所述的成膜装置，其特征在于，
所述过滤器与所述气体喷出构件相隔3mm～6mm。
5.根据权利要求1～4中的任一项所述的成膜装置，其特征在于，
所述过滤器由使用了金属纤维的金属网构成。
6.根据权利要求1～5中的任一项所述的成膜装置，其特征在于，
所述气体供给部使常温下为固体状的成膜原料升华来生成成膜原料气体，所述微粒是所述成膜原料气体再次固化而生成的。
7.根据权利要求6所述的成膜装置，其特征在于，
所述成膜原料是Ru3(CO)12。
8.根据权利要求7所述的成膜装置，其特征在于，
所述基板载置台被保持为100℃～155℃的范围的温度。
9.根据权利要求6～8中的任一项所述的成膜装置，其特征在于，
还具有将所述过滤器进行加热的加热器，所述成膜装置利用所述加热器将所述过滤器进行加热，由此使所述成膜原料气体再次固化而生成的所述微粒升华。
10.一种成膜方法，用于在基板上形成膜，所述成膜方法包括：
准备根据权利要求1～9中的任一项所述的成膜装置；
将基板载置于所述基板载置台；
从所述气体供给部向所述基板载置台上的基板供给所述包含成膜原料气体的气体；
在所述包含成膜原料气体的气体到达所述基板载置台上的基板之前，使所述包含成膜原料气体的气体通过所述过滤器来捕获该包含成膜原料气体的气体中的微粒；以及
使用通过了所述过滤器的所述包含成膜原料气体的气体来在基板上形成膜。
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