TW202133697A - 半導體裝置及其製造方法 - Google Patents

半導體裝置及其製造方法 Download PDF

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TW202133697A
TW202133697A TW109144251A TW109144251A TW202133697A TW 202133697 A TW202133697 A TW 202133697A TW 109144251 A TW109144251 A TW 109144251A TW 109144251 A TW109144251 A TW 109144251A TW 202133697 A TW202133697 A TW 202133697A
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resin layer
substrate
semiconductor device
controller chip
semiconductor
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TW109144251A
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TWI786491B (zh
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本間荘一
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日商鎧俠股份有限公司
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Abstract

本實施方式之半導體裝置具備配線基板，上述配線基板具有：焊墊，其電性連接於設置於絕緣基板之配線；及絕緣材，其設置於焊墊間。第1半導體晶片於與該配線基板對向之第1面，具有連接於配線基板之焊墊之金屬凸塊。第1樹脂層設置於絕緣材與第1半導體晶片之間。第2樹脂層於配線基板與第1半導體晶片之間，覆蓋第1樹脂層及金屬凸塊之周圍。第3樹脂層於配線基板上覆蓋配線基板上之構造體。

Description

半導體裝置及其製造方法
本實施方式係關於一種半導體裝置及其製造方法。
半導體晶片具有金屬凸塊，存在覆晶連接於配線基板上之端子之情形。又，半導體晶片薄膜化，存在當經過半導體元件之製造步驟時產生翹曲之情形。若將此種存在翹曲之半導體晶片覆晶連接至配線基板上，則半導體晶片有時會有缺損或發生金屬凸塊與配線基板之端子之連接不良。
又，於同時實施覆晶連接及樹脂密封之情形時，有密封樹脂內之填料或密封樹脂本身會進入半導體晶片之凸塊與配線基板之端子之間而導致凸塊與端子之連接斷裂之虞。又，於半導體晶片使用低介電膜(Low-k膜)之情形時，有低介電膜會受到應力而導致低介電膜剝離之虞。
一實施方式提供一種半導體裝置及其製造方法，當將存在翹曲之半導體晶片安裝於配線基板上時，可將半導體晶片與配線基板良好地連接。
本實施方式之半導體裝置具備配線基板，該配線基板具有：焊墊，其電性連接於設置於絕緣基板之配線；及絕緣材，其設置於焊墊間。第1半導體晶片在與該配線基板對向之第1面具有連接於配線基板之焊墊之金屬凸塊。第1樹脂層設置於絕緣材與第1半導體晶片之間。第2樹脂層於配線基板與第1半導體晶片之間覆蓋第1樹脂層及金屬凸塊之周圍。第3樹脂層於配線基板上覆蓋配線基板上之構造體。
根據上述構成，可提供一種半導體裝置及其製造方法，當將存在翹曲之半導體晶片安裝於配線基板上時，可將半導體晶片與配線基板良好地連接。
以下，參照圖式對本發明之實施方式進行說明。本實施方式並不限定本發明。於以下之實施方式中，配線基板之上下方向表示使搭載半導體晶片之面朝上時之相對方向，有時與遵循重力加速度之上下方向不同。圖式係模式圖或概念圖，各部分之比率等未必與實物相同。於說明書與圖式中，對與上文關於已出現之圖式所敍述之要素相同之要素標註相同符號並適當省略詳細說明。
(第1實施方式) 圖1A係表示第1實施方式之半導體裝置之構成例之剖視圖。本實施方式之半導體裝置1例如係NAND(Not AND，反及)型快閃記憶體。半導體裝置1具備配線基板10、第1樹脂層20、作為第1半導體晶片之控制器晶片30、第2樹脂層35、第3樹脂層90、第4樹脂層40、間隔件50、作為第2半導體晶片之NAND型記憶體晶片(以下，記憶體晶片)60、及接合線80。第3樹脂層90係所謂塑模樹脂，為密封樹脂。再者，本實施方式並不限定於NAND型快閃記憶體，亦可應用於覆晶連接之半導體裝置。
配線基板10具備絕緣基板11、配線12、接觸插塞13、金屬焊墊14、焊料球15及阻焊劑16。絕緣基板11例如使用玻璃環氧樹脂、陶瓷(氧化鋁系、AlN系)等絕緣材料。配線12設置於絕緣基板11之正面、背面或內部，將金屬焊墊14與焊料球15電性連接。接觸插塞13以貫通絕緣基板11內之方式設置，將配線12間電性連接。金屬焊墊14於配線基板10之正面與控制器晶片30之金屬凸塊31連接。焊料球15於配線基板10之背面連接於配線12。配線12、接觸插塞13及金屬焊墊14例如使用Cu、Ni、Au、Sn、Ag、Bi、Pd等導電性材料之單體膜、複合膜、合金膜。焊料球15例如使用Sn、Ag、Cu、Au、Bi、Zn、In、Sb、Ni等之單體膜、複合膜、合金膜等導電性材料。阻焊劑16設置於配線基板10之正面及背面，且設置於相鄰金屬焊墊14間或相鄰焊料球15間，將其等電性絕緣。又，阻焊劑16被覆配線12之正面而保護配線12。
控制器晶片30具有：第1面F1，其與配線基板10對向；及第2面F2，其位於第1面F1之相反側。於第1面F1設置有金屬凸塊31。金屬凸塊31連接(熔接)於配線基板10之金屬焊墊14。即，控制器晶片30覆晶連接於配線基板10上。金屬凸塊31例如使用焊料等導電性金屬。半導體晶片之基板可為矽基板、GaAg基板、SiC基板等。
控制器晶片30薄化，且於第1面F1或第2面F2上具有半導體元件。控制器晶片30存在當形成半導體元件時產生翹曲之情形。控制器晶片30之翹曲例如可能呈山形、碗形或鞍形。圖1A中未圖示控制器晶片30之翹曲。
第1樹脂層20設置於配線基板10與控制器晶片30之第1面F1之間。第1樹脂層20呈柱狀，且將配線基板10與控制器晶片30接著。
第1樹脂層20例如使用酚系、聚醯亞胺系、聚醯胺系、丙烯酸系、環氧系、PBO(Polybenzoxazole，聚苯并㗁唑)系、矽酮系、苯并環丁烯系等樹脂、或其等之混合材料、複合材料。
第2樹脂層35將配線基板10與控制器晶片30之第1面F1之間填埋。第2樹脂層35例如為底部填充膠，使用液狀類型之非導電性樹脂材料。第2樹脂層35覆蓋第1樹脂層20、金屬焊墊14及金屬凸塊31之周圍。藉此，第1樹脂層20及第2樹脂層35支援金屬焊墊14與金屬凸塊31之連接，而抑制金屬焊墊14與金屬凸塊31之間之斷裂。又，第2樹脂層35可保護配線基板10與控制器晶片30之間之第1樹脂層20。由於利用第1樹脂層20將控制器晶片30與配線基板10接著，且第2樹脂層35保護第1樹脂層20，故控制器晶片30之翹曲減輕。
第2樹脂層35例如可使用環氧樹脂、矽酮樹脂、環氧/矽酮混合樹脂、丙烯酸系樹脂、聚醯亞胺樹脂、聚醯胺樹脂、或酚樹脂等作為基底材料。
又，第2樹脂層35包含還原性材料、例如醇類或有機酸作為添加材料，以將形成於金屬凸塊31之正面之金屬氧化膜去除。作為醇類，可列舉自甲醇、乙醇、異丙醇、聚乙烯醇、乙二醇、丙二醇、二乙二醇、甘油、三乙二醇、四乙二醇、卡必醇、2-乙氧基乙醇等中選擇之至少1種。又，亦可為烷基醚系材料。例如，可列舉二乙二醇單丁醚、三乙二醇二甲醚等。亦可使用烷烴、胺化合物等。例如，可列舉甲醯胺、二甲基甲醯胺等。該等既可單獨使用，亦可將複數種混合。又，亦可向該等材料中添加有機酸。作為有機酸，可列舉甲酸、乙酸、苯甲酸、松香酸、長葉松酸、脫氫松香酸、異海松酸、新松香酸、海松酸、松香等。該等既可單獨使用，亦可將複數種混合。第2樹脂層35利用點膠法(噴射法、螺旋法)、印刷法等方法塗佈。又，第2樹脂層35具有將位於金屬凸塊31或金屬焊墊14之正面之氧化膜(SnO、SnO2 )等還原而去除之功能。
於控制器晶片30周圍之配線基板10上介隔第4樹脂層40設置有間隔件50。第4樹脂層40例如使用DAF(Die Attach Film，晶片黏結膜)。間隔件50藉由第4樹脂層40而接著於配線基板10上。間隔件50係與控制器晶片30之第2面F2之高度大致相等之高度，支持記憶體晶片60。如圖1B所示，間隔件50例如具有四邊形框形狀及以四邊形包圍控制器晶片30之形狀，設置成於配線基板10之正面上包圍控制器晶片30之四周。圖1B係表示第1實施方式之半導體裝置之構成例之俯視圖。間隔件50例如使用矽、玻璃、陶瓷、絕緣基板、金屬板等材料。亦可於間隔件50上形成聚醯亞胺樹脂、聚醯胺樹脂、環氧樹脂、丙烯酸系樹脂、酚樹脂、矽酮樹脂、PBO(PolyBenzOxazole)樹脂等之有機膜，以提高密接性。
記憶體晶片60設置於控制器晶片30之上方，且藉由第4樹脂層固定於控制器晶片30及間隔件50上。記憶體晶片60例如具有由複數個記憶胞三維配置而成之立體型記憶胞陣列。第4樹脂層40設置於控制器晶片30之第2面F2及間隔件50上，將記憶體晶片60固定於控制器晶片30及間隔件50上。
複數個第4樹脂層40及複數個記憶體晶片60亦可交替地積層於控制器晶片30及間隔件50上。即便如此將複數個記憶體晶片60積層於控制器晶片30之上方，由於減輕了控制器晶片30之翹曲，故複數個記憶體晶片60亦不易受控制器晶片30翹曲之影響。即，複數個記憶體晶片60不易產生缺損，而不易自第4樹脂層40剝落。
接合線80將記憶體晶片60之金屬焊墊70與配線基板10之任一個金屬焊墊14之間電性連接。第3樹脂層90被覆而保護控制器晶片30、記憶體晶片60、接合線80等配線基板10上之整個構造。又，第3樹脂層90填充於配線基板10與控制器晶片30之第1面F1之間，且以被覆第1樹脂層20及金屬凸塊31周圍之方式設置。
此處，對第1樹脂層20及第2樹脂層35詳細地進行說明。
圖2(A)及圖2(B)係表示第1樹脂層20、第2樹脂層35及其周邊之構成例之剖視圖。第1樹脂層20設置於控制器晶片30之第1面F1與配線基板10之阻焊劑16之間，將控制器晶片30與配線基板10接著。第1樹脂層20之熱膨脹係數較配線基板(例如玻璃環氧樹脂)10、控制器晶片(例如矽)30及第3樹脂層90各自之熱膨脹係數大。又，控制器晶片(例如矽)30之熱膨脹係數較配線基板(例如玻璃環氧樹脂)10之熱膨脹係數小，因此，當將控制器晶片30安裝於配線基板10時，配線基板10較之控制器晶片30更會根據溫度而大幅伸縮。例如，矽單晶之熱膨脹係數約為3.5 ppm/℃，玻璃環氧樹脂之熱膨脹係數約為17 ppm/℃。因此，若第1樹脂層20之熱膨脹係數較配線基板10及控制器晶片30之熱膨脹係數小，則當將控制器晶片30安裝於配線基板10時，有第1樹脂層20無法追隨配線基板10與控制器晶片30之伸縮差而導致剝離之虞。因此，第1樹脂層20之熱膨脹係數較佳為處於20 ppm/℃～100 ppm/℃之範圍。進而較佳為第1樹脂層20之熱膨脹係數為30 ppm/℃～60 ppm/℃之範圍。若第1樹脂層20之熱膨脹係數小於20 ppm/℃，則接近配線基板10之熱膨脹係數，如此有第1樹脂層20無法追隨配線基板10與控制器晶片30之伸縮差而導致剝離之虞。反之，若第1樹脂層20之熱膨脹係數大於100 ppm/℃，則有第1樹脂層20過度伸長而導致控制器晶片30自配線基板10剝落之虞。於該等情形時，金屬凸塊31會斷裂或自金屬焊墊14剝落而導致連接不良。因此，第1樹脂層20之熱膨脹係數較佳為較配線基板(例如玻璃環氧樹脂)10及控制器晶片(例如矽)30各自之熱膨脹係數大。進而較佳為第1樹脂層20之熱膨脹係數大於第3樹脂層90之熱膨脹係數，從而能夠抑制翹曲。
又，第1樹脂層20之彈性模數較配線基板(例如玻璃環氧樹脂)10之阻焊劑16及金屬凸塊(例如焊料)31各自之彈性模數低。又，若第1樹脂層20之彈性模數較阻焊劑16及金屬凸塊31之彈性模數高(硬)，則有不會使控制器晶片30相對於配線基板10之翹曲緩和而導致第1樹脂層20剝落之虞。因此，第1樹脂層20之彈性模數較佳為處於1 MPa～3 GPa之範圍。進而較佳為第1樹脂層20之彈性模數為10 MPa～1 GPa之範圍。若第1樹脂層20之彈性模數低於1 MPa，則第1樹脂層20過度柔軟，而難以將控制器晶片30固定於配線基板10。若第1樹脂層20之彈性模數超過3 GPa，則第1樹脂層20過硬，有會因控制器晶片30之翹曲而自控制器晶片30或配線基板10剝離之虞。於該等情形時，金屬凸塊31會斷裂或自金屬焊墊14剝落而導致連接不良。因此，第1樹脂層20之彈性模數較佳為較作為絕緣層之阻焊劑16及金屬凸塊(例如焊料)31各自之彈性模數低。進而較佳為第1樹脂層20之彈性模數低於第3樹脂層90之彈性模數，從而能夠抑制翹曲。
接下來，對第2樹脂層35詳細地進行說明。
第2樹脂層35設置於控制器晶片30之第1面F1與配線基板10之阻焊劑16之間，被覆而保護第1樹脂層20、金屬焊墊14及金屬凸塊31。第2樹脂層35含有矽氧化物(二氧化矽)等線膨脹係數相對較小之填料。又，於本實施方式中，第1樹脂層20中不含填料，但亦可使用含有填料之第1樹脂層20。於本實施方式中，第2樹脂層35中包含之填料濃度較第1樹脂層20中包含之填料濃度高。因此，第2樹脂層35之熱膨脹係數較第1樹脂層20之熱膨脹係數低。又，於金屬凸塊31之回焊後，第2樹脂層35之彈性模數較第1樹脂層20之彈性模數高。
藉由提高第2樹脂層35之填料濃度，第2樹脂層35之熱膨脹係數相對變小。藉此，第2樹脂層35可抑制控制器晶片30與配線基板10之間之熱膨脹差，從而可抑制控制器晶片30及配線基板10其中一個之伸長或收縮。
又，藉由使第2樹脂層35之彈性模數高於第1樹脂層20之彈性模數，可使金屬凸塊31及第1樹脂層20之保護性能提高。藉此，即便之後進行金屬凸塊31之回焊，亦可抑制金屬凸塊31或第1樹脂層20因應力而斷裂。
例如，對本實施方式之半導體裝置1進行溫度循環試驗，調查其可靠性。溫度循環試驗進行了3000個循環，該循環係將半導體裝置1暴露於-55℃之氣氛中30分鐘，暴露於25℃之氣氛中5分鐘，以及暴露於125℃之氣氛中30分鐘。於本實施方式之半導體裝置1中，於金屬凸塊31與金屬焊墊14之連接部位未產生斷裂。如此，於本實施方式之半導體裝置1中，藉由第1樹脂層20及第2樹脂層35保護金屬凸塊31與金屬焊墊14之連接部位。
即便控制器晶片30具有翹曲，第1樹脂層20亦會將控制器晶片30接著於配線基板10，且第2樹脂層35會保護第1樹脂層20及金屬凸塊31之周圍。因此，抑制控制器晶片30自配線基板10剝落。又，第1樹脂層20及第2樹脂層35能夠某種程度地矯正控制器晶片30之翹曲。因此，於控制器晶片30與配線基板10之間，金屬凸塊31與金屬焊墊14能夠連接，且金屬凸塊31不易斷裂。其結果，可抑制金屬凸塊31與金屬焊墊14之間之連接不良。進而，由於減輕了控制器晶片30之翹曲，故可抑制積層於控制器晶片30上之記憶體晶片60產生缺損。其結果，即便將產生翹曲之控制器晶片30或記憶體晶片60安裝於配線基板上，亦可將半導體晶片與配線基板良好地連接。
再者，圖1A中，於同一個半導體封裝內設置有覆晶連接之控制器晶片30、及打線接合連接之記憶體晶片60兩者。即，圖1A中，成為混合型多晶片封裝。但是，本實施方式中，複數個記憶體晶片60亦可與控制器晶片30同樣地進行覆晶連接。於該情形時，控制器晶片30及複數個記憶體晶片60，亦可經由貫通電極(TSV(Through Silicon Via，矽穿孔))而電性連接。再者，圖2(A)及圖2(B)中，於控制器晶片30上不存在第3樹脂層90，但於控制器晶片之上部未搭載其他晶片等情形時，於控制器晶片30上亦可存在第3樹脂層90。
接下來，就本實施方式之半導體裝置1之製造方法進行說明。
圖3(A)～圖9係表示第1實施方式之控制器晶片30之製造方法之一例之剖視圖。首先，如圖3(A)所示，於半導體晶圓W上形成半導體元件2及金屬焊墊4。半導體晶圓W係例如矽、GaAs、SiC等半導體晶圓。半導體元件2例如可為CMOS(Complementary Metal Oxide Semiconductor，互補金氧半導體)電路等。金屬焊墊4例如使用Al、Cu、Au、Ni、Pd、Ag等之單體膜、複合膜、合金膜即可。
繼而，以被覆半導體元件2之方式形成保護絕緣膜3。使用微影技術及蝕刻技術，對保護絕緣膜3進行加工，使金屬焊墊4之一部分露出。保護絕緣膜3例如可使用氧化矽膜、氮化矽膜、聚醯亞胺樹脂、酚樹脂、PBO(PolyBenzOxazole)樹脂等絕緣材料。又，亦可為該等絕緣材料之複合膜。
繼而，如圖3(B)所示，使用濺鍍法、蒸鍍法、CVD(Chemical Vapor Deposition，化學汽相沈積)法、無電解鍍覆法等，於保護絕緣膜3及金屬焊墊4上形成障壁金屬BM。障壁金屬BM例如使用Ti、TiN、Cr、CrN、Cu、Ni、Au、Pd、W等導電性金屬之單體膜、氮化膜、複合膜、合金膜即可。例如，利用濺鍍法依次形成Ti及Cu。Ti之膜厚例如約為0.1 μm，Cu之膜厚約為0.3 μm。
繼而，如圖4(A)所示，使用微影技術，於障壁金屬BM上形成抗蝕劑PR。將抗蝕劑PR以使金屬焊墊14之區域開口之方式圖案化。抗蝕劑PR之厚度例如約為40 μm。開口之大小例如約為20 μm。抗蝕劑PR開口間之間距約為50 μm。為了將抗蝕劑PR之開口部之殘渣去除，亦可於抗蝕劑PR開口後，進行使用氧等之灰化處理。
繼而，如圖4(B)所示，於金屬焊墊14上之障壁金屬BM上進行金屬鍍覆。例如，於障壁金屬BM上形成金屬31a、31b、31c。金屬31a例如可使用銅。金屬31b例如可使用鎳。金屬31c例如可使用焊料(SnAg)。金屬31a～31c作為金屬凸塊31發揮功能。焊料例如使用Sn、Ag、Cu、Au、Bi、Zn、In、Sb、Ni等之單體膜、複合膜、合金膜即可。金屬31c可使用印刷法、球搭載法而形成。金屬31a例如係厚度約為20 μm之銅。金屬31b例如係厚度約為3 μm之鎳。金屬31c例如係厚度約為12 μm之SnAg。
繼而，使用利用氧等之灰化處理等將抗蝕劑PR去除之後，如圖5(A)所示，將金屬凸塊31用作遮罩而對障壁金屬BM進行蝕刻。藉此，障壁金屬BM僅殘留於金屬凸塊31下。例如，對銅進行蝕刻之情形時，使用檸檬酸與過氧化氫之混合液即可。對鈦進行蝕刻之情形時，使用氫氟酸或過氧化氫水等即可。
繼而，如圖5(B)所示，藉由熱處理對金屬凸塊31之金屬31c(例如焊料)進行回焊(熔融)，使金屬凸塊31之前端變圓。關於回焊處理，既可塗佈助焊劑於N2 氣氛中進行回焊，亦可於甲酸氣體、H2 氣體、H2 及N2 之混合氣體等還原氣氛中，一面將焊料之氧化膜還原，一面進行回焊。亦可利用Ar電漿等將焊料之氧化膜去除而進行回焊處理。例如，塗佈水溶性助焊劑後，於260℃之N2 氣氛中執行回焊30秒鐘。於使用助焊劑之情形時，回焊後進行清洗，以將助焊劑去除。當為水溶性助焊劑時，使用純水等清洗助焊劑，當為松香系助焊劑時，使用醇系等溶劑清洗助焊劑。
繼而，如圖6(A)所示，將第1樹脂層20之材料塗佈於第1面F1之金屬凸塊31及保護絕緣膜3上。此處，第1樹脂層被調整為具有感光性。第1樹脂層20之材料以較金屬凸塊31薄之膜厚(例如約30 μm)塗佈。由於第1樹脂層20為感光性材料，故如圖6(B)所示，可使用微影技術將第1樹脂層20圖案化。藉此，第1樹脂層20呈柱狀選擇性地殘留(形成)於保護絕緣膜3上之特定部位。再者，示出將感光性之第1樹脂層20塗佈於控制器晶片30(半導體晶片)上之例，但感光性之第1樹脂層20亦可形成於配線基板10上，還可形成於控制器晶片30與配線基板10兩者。
圖7(A)表示形成半導體元件後之半導體晶圓W。繼而，對半導體晶圓之背面進行研磨使其變薄。於複數個控制器晶片30間存在切割線DL，如下所述，藉由沿該切割線DL切斷，而將控制器晶片30單片化。
繼而，如圖7(B)所示，於張設在晶圓環130內之可撓性樹脂帶131上貼附半導體晶圓W。繼而，使用雷射振盪器150，自半導體晶圓W之正面對與切割線DL對應之部分照射雷射光。藉此，於半導體晶圓W之切割線DL上形成槽。
繼而，如圖7(C)所示，使用切割刀160，沿半導體晶圓W之切割線DL切斷。藉此，於樹脂帶131上，半導體晶圓W單片化成控制器晶片30。亦可不照射雷射光，而僅藉由刀片切割進行單片化。
繼而，對樹脂帶131照射紫外線，降低控制器晶片30與樹脂帶131之間之接著劑之黏著性，使得能夠將控制器晶片30自樹脂帶131上取下。又，進行外觀檢查等。以此種方式完成控制器晶片30。再者，記憶體晶片60只要將例如記憶胞陣列作為半導體元件2形成於半導體晶圓W上即可。記憶體晶片60之其他製造步驟與控制器晶片30之製造步驟相同，因此省略說明。
接下來，對將控制器晶片30安裝至配線基板10上之方法進行說明。於配線基板10形成有阻焊劑16。阻焊劑16使用環氧系、酚系、聚醯亞胺系、聚醯胺系、丙烯酸系、PBO系、矽酮系等樹脂、其等之混合材料、複合材料。又，阻焊劑16中亦可包含二氧化矽等填料。
圖8(A)～圖9(B)係表示將控制器晶片30安裝至配線基板10上之組裝步驟之一例之剖視圖。首先，配線基板10亦可進行烘烤，以去掉水分。或者，亦可進行電漿處理，以使配線基板10與第1樹脂層20之密接性提高。
繼而，如圖8所示，使用壓接裝置100拾取控制器晶片30，並使用配線基板10之對準標記將控制器晶片30之位置對準。繼而，壓接裝置100將控制器晶片30熱壓接於配線基板10，將控制器晶片30之金屬凸塊31與配線基板10之金屬焊墊14覆晶連接。例如，將搭載配線基板10之平臺之溫度加熱至約100℃，將吸附控制器晶片30之頭之溫度加熱至約200℃。藉此，使第1樹脂層20之溫度為約150℃，使第1樹脂層20軟化而利用第1樹脂層20將控制器晶片30與配線基板10接著。金屬凸塊31與金屬焊墊14間亦可存在1 μm以下左右之間隙。再者，利用壓接裝置100之加熱方法可為恆溫，或者，亦可為脈衝加熱。
繼而，向配線基板10與控制器晶片30之間供給第2樹脂層35。第2樹脂層35之供給方法例如可為點膠法(噴射法、螺旋法)、印刷法等。如上所述，第2樹脂層35係於作為基底材料之樹脂中添加去除金屬氧化膜之還原性材料所得之液體或膏狀之材料。第2樹脂層35藉由毛細管現象而導入至配線基板10與控制器晶片30之間。第2樹脂層35填充於金屬凸塊31及金屬焊墊14之周圍，將形成於金屬凸塊31及金屬焊墊14之金屬氧化膜(自然氧化膜)去除。藉此，使金屬凸塊31與金屬焊墊14良好地連接。又，第2樹脂層35亦填充於第1樹脂層20之周圍。與此同時，第2樹脂層35沿著控制器晶片30之側壁被覆至其中途為止。
繼而，將控制器晶片30及配線基板10放進未圖示之回焊爐等進行加熱。亦可為使用雷射之回焊。將溫度上升至金屬凸塊31之熔點以上，使金屬凸塊31熔融。藉由如此對金屬凸塊31進行回焊，而將金屬凸塊31與金屬焊墊14確實地連接。此處，對金屬凸塊31進行回焊時第2樹脂層35之黏度設為100 Pa・S～30000 Pa・S。於第2樹脂層35之黏度未達100 Pa・S之情形時，有第2樹脂層35無法保護金屬凸塊31與金屬焊墊14之間之連接而導致金屬凸塊31斷裂之虞。另一方面，當第2樹脂層35之黏度超過30000 Pa・S時，反而有會妨礙金屬凸塊31與金屬焊墊14之連接之虞。
繼而，將配線基板10等放進烘箱進行加熱，以使第2樹脂層35硬化。
又，回焊後，進而利用烘箱加熱後，硬化之第2樹脂層35之彈性模數設為200 MPa～15 GPa。於第2樹脂層35之彈性模數未達200 MPa之情形時，有第2樹脂層35無法充分保護金屬凸塊31與金屬焊墊14之間之連接而導致其等之連接斷裂之虞。另一方面，當第2樹脂層35之彈性模數超過15 GPa時，會對控制器晶片30及配線基板10施加應力，從而控制器晶片30及配線基板10之翹曲變大。這會使之後之組裝步驟中之搬送變難。
繼而，如圖1A所示，將間隔件50利用第4樹脂層40接著於配線基板10上。將複數個記憶體晶片60利用第4樹脂層40接著於控制器晶片30及間隔件50上。藉此，於配線基板10上形成控制器晶片30及複數個記憶體晶片60之積層體。繼而，根據需要利用接合線80進行打線接合。繼而，將配線基板10上之控制器晶片30、複數個記憶體晶片60及第2樹脂層35等構造體利用第3樹脂層90密封。
其後，於配線基板10之背面形成焊料球15。進而，藉由對配線基板10進行切割而將半導體裝置1單片化。藉此，完成半導體裝置1。
根據本實施方式，於覆晶連接時，第1樹脂層20預先將控制器晶片30與配線基板10之間接著，其後，藉由回焊，將金屬凸塊31與金屬焊墊14連接。藉此，因控制器晶片30及配線基板10之翹曲所致之金屬凸塊31之斷裂得以抑制。控制器晶片30及配線基板10之翹曲隨著其等之厚度變薄而變大。但是，根據本實施方式，即便控制器晶片30之厚度為100 μm以下，且配線基板10之厚度為200 μm以下，亦不會產生金屬凸塊31與金屬焊墊14之連接不良。
又，於本實施方式中，壓接裝置100只要將控制器晶片30之第1樹脂層20與配線基板10接著即可。因此，接著時間較短，減少了壓接裝置100之處理量。
又，若第1樹脂層20將控制器晶片30與配線基板10之間接著，則金屬凸塊31與金屬焊墊14接觸。或者，金屬凸塊31與金屬焊墊14之間之間隙成為1 μm以下。因此，當供給第2樹脂層35時，第2樹脂層35中包含之填料不會進入金屬凸塊31與金屬焊墊14之間。因此，金屬凸塊31與金屬焊墊14之連接之可靠性提高。例如，即便於金屬凸塊31間之間距微細為100 μm以下之情形時，控制器晶片30與配線基板10亦利用第1樹脂層20及第2樹脂層35得以固定。因此，可抑制控制器晶片30於金屬凸塊31之回焊過程中移動。其結果，金屬凸塊31與金屬焊墊14之連接不良得以抑制。
於控制器晶片30使用低介電膜之情形時，控制器晶片30與配線基板10亦利用第1樹脂層20及第2樹脂層35得以固定，因此，可抑制於金屬凸塊31之回焊時應力集中於金屬凸塊31附近之低介電膜。藉此，可抑制於金屬凸塊31之回焊過程中低介電膜剝落。
對金屬凸塊31進行回焊時第2樹脂層35之黏度設為100 Pa・S～30000 Pa・S。藉此，第2樹脂層35不會妨礙金屬凸塊31與金屬焊墊14之連接，且可保護金屬凸塊31與金屬焊墊14之間之連接。
又，回焊後，硬化之第2樹脂層35之彈性模數設為200 MPa～15 GPa。藉此，不太會對控制器晶片30及配線基板10施加應力，而可充分保護金屬凸塊31與金屬焊墊14之間之連接。
(變化例1) 圖10(A)及圖10(B)係表示控制器晶片30之第2面F2中之金屬凸塊31及第1樹脂層20之佈局之俯視圖。如圖10(A)所示，第1樹脂層20亦可與金屬凸塊31相隔並且呈矩陣狀地二維配置於由金屬凸塊31包圍之區域之內側。金屬凸塊31與第1樹脂層20之距離例如為10 μm～1 mm之範圍。若金屬凸塊31與第1樹脂層20之距離未達10 μm，則有於第1樹脂層20之曝光及顯影時第1樹脂層20會產生應變或變形之虞。另一方面，若金屬凸塊31與第1樹脂層20之距離超過1 mm，則有控制器晶片30之翹曲得不到矯正而導致第1樹脂層20剝落之虞。
又，第1樹脂層20之接著面積亦可較金屬凸塊31與金屬焊墊14之接觸面積大。藉此，可更牢固地加強金屬凸塊31與金屬焊墊14之間之連接。又，可矯正控制器晶片30之翹曲。又，自上方觀察呈柱狀之一個第1樹脂層20時之面積較自上方觀察一個金屬凸塊31時之面積大。
如圖10(B)所示，第1樹脂層20亦可大致均勻地設置於由金屬凸塊31包圍之區域之內外。藉由如此於金屬凸塊31之周圍設置第1樹脂層20，可將整個控制器晶片30接著於配線基板10，從而可進一步矯正控制器晶片30之翹曲。
(第2實施方式) 圖11及圖12係表示第2實施方式之半導體裝置之製造方法之一例之剖視圖。經過圖3(A)～圖7(C)所示之步驟後，如圖11所示，於配線基板10之金屬焊墊14間之阻焊劑層16上塗佈第1樹脂層20。此時，第1樹脂層20為液體或膏狀。第1樹脂層20之塗佈方法例如可為點膠法(噴射法、螺旋法)、印刷法等。此時，與第1實施方式不同，第1樹脂層20亦可不具有感光性。
繼而，與第1實施方式同樣地，將控制器晶片30覆晶連接至配線基板10上。藉此，如圖12所示，第1樹脂層20將控制器晶片30與配線基板10之間連接。第1樹脂層20藉由進行熱處理而硬化。
其後，經過圖9及圖1所示之步驟，而完成第2實施方式之半導體裝置1。再者，第1樹脂層20及第2樹脂層35之特性與第1實施方式之第1樹脂層20及第2樹脂層35之特性相同。因此，第2實施方式可獲得與第1實施方式相同之效果。
亦可如此將第1樹脂層20選擇性地供給至配線基板10之特定部位，其後，將控制器晶片30接著於配線基板10上。此時，將控制器晶片30之金屬凸塊31與配線基板10之焊墊連接，且將第1樹脂層20接著於控制器晶片30。
再者，於第2實施方式中，第1樹脂層20以液體或膏狀之形式供給。但是，第1樹脂層20亦可為膜狀之樹脂。於該情形時，於圖11所示之步驟中，將膜狀之第1樹脂層20選擇性地貼附於配線基板10之金屬焊墊14間之阻焊劑層16之特定部位上即可。即，亦可於配線基板10之特定部位選擇性地形成第1樹脂層20，其後，將控制器晶片30接著於配線基板10上。
(第3實施方式) 圖13係表示第3實施方式之半導體裝置之製造方法之一例之剖視圖。於第3實施方式中，於控制器晶片30側貼附第1樹脂層20。將具有第1樹脂層20之控制器晶片30覆晶連接至配線基板10上。
例如，經過圖3(A)～圖7(C)所示之步驟後，如圖13所示，將第1樹脂層20貼附於控制器晶片30之金屬凸塊31間。第1樹脂層20之材料可與第1實施方式之第1樹脂層20之材料相同。
關於膜狀之第1樹脂層20，只要將預先切割成特定尺寸之第1樹脂層20貼附至控制器晶片30即可。或者，關於膜狀之第1樹脂層20，亦可將尺寸較大之膜狀之第1樹脂層20一面利用模具進行沖切一面貼附至控制器晶片30。或者，亦可於控制器晶片30上設置感光性之液狀或膜狀之第1樹脂層20之後，藉由光微影法形成為所需圖案。
其後，經過圖9及圖1所示之步驟，完成第3實施方式之半導體裝置1。第3實施方式可獲得與第1實施方式相同之效果。
(第4實施方式) 圖14係表示第4實施方式之半導體裝置之製造方法之一例之概略圖。
於第4實施方式中，經過圖3(A)～圖8所示之步驟後，於第1回焊爐110中，對接著後之控制器晶片30及配線基板10進行熱處理，將配線基板10等所吸收之水分排出(第1熱處理步驟)。第1回焊爐之溫度設為金屬凸塊之熔融溫度以下且可將水分排出之溫度，例如100～200℃。繼而，於樹脂塗佈裝置120中，自注射器121將第2樹脂層35供給至控制器晶片30與配線基板10之間。其後，於第2回焊爐135中，再次對控制器晶片30及配線基板10進行熱處理而使金屬凸塊31熔融，連接至配線基板10之焊墊，並使第2樹脂層35硬化(第2熱處理步驟)。如此，第1回焊處理(第1熱處理步驟)、第2樹脂層35之供給及作為第2回焊處理之金屬凸塊31之熔融、第2樹脂層之硬化處理(第2熱處理步驟)亦可以一系列連續之裝置執行。藉此，可抑制配線基板10吸濕，從而可抑制第2樹脂層內產生孔隙。
第4實施方式之其他構成及製造步驟，可與第1實施方式之構成及製造步驟相同。藉此，第4實施方式亦可獲得第1實施方式之效果。
變化例等(a)於上述實施方式中，第3樹脂層90之彈性模數處於5 GPa～50 GPa之範圍，且大於第2樹脂層35之彈性模數。第4樹脂層40之彈性模數處於100 MPa～5 GPa之範圍，且大於第1樹脂層20之彈性模數，但小於第2樹脂層35之彈性模數。即，第1樹脂層20、第2樹脂層35、第3樹脂層90、第4樹脂層40之彈性模數，具有第1樹脂層20＜第4樹脂層40＜第2樹脂層35＜第3樹脂層90之關係。藉由設為此種關係，可進一步防止基板之翹曲，並且保護連接。(b)於上述實施方式中，第2樹脂層35之熱膨脹係數處於15 ppm/℃～50 ppm/℃之範圍，且大於第3樹脂層90之熱膨脹係數。第3樹脂層90之熱膨脹係數處於5 ppm/℃～30 ppm/℃之範圍。第4樹脂層40之熱膨脹係數處於50 ppm/℃～150 ppm/℃之範圍，且大於第1樹脂層20之熱膨脹係數。即，第1樹脂層20、第2樹脂層35、第3樹脂層90、第4樹脂層40之熱膨脹係數，具有第3樹脂層90＜第2樹脂層35＜第1樹脂層20＜第4樹脂層40之關係。藉由設為此種關係，可進一步防止樹脂彼此之剝離，並且保護連接。
對本發明之若干實施方式進行了說明，但該等實施方式係作為示例而提出，並不意圖限定發明之範圍。該等實施方式能夠以其他多種形態實施，可於不脫離發明主旨之範圍內進行各種省略、置換、變更。該等實施方式或其變化包含於發明之範圍或主旨中，且同樣包含於申請專利範圍所記載之發明及其均等之範圍內。
相關申請之引用 本申請基於2020年02月17日提出申請之先前的日本專利申請第2020-024557號之優先權而主張優先權利益，其全部內容藉由引用而包含於本文中。
1:半導體裝置 2:半導體元件 3:保護絕緣膜 4:金屬焊墊 10:配線基板 11:絕緣基板 12:配線 13:接觸插塞 14:金屬焊墊 15:焊料球 16:阻焊劑 20:第1樹脂層 30:控制器晶片 31:金屬凸塊 31a:金屬 31b:金屬 31c:金屬 35:第2樹脂層 40:第4樹脂層 50:間隔件 60:記憶體晶片 80:接合線 90:第3樹脂層 100:壓接裝置 110:第1回焊爐 120:樹脂塗佈裝置 121:注射器 130:晶圓環 131:樹脂帶 135:第2回焊爐 150:雷射振盪器 160:切割刀 BM:障壁金屬 DL:切割線 F1:第1面 F2:第2面 PR:抗蝕劑 W:半導體晶圓
圖1A係表示第1實施方式之半導體裝置之構成例之剖視圖。  圖1B係表示第1實施方式之半導體裝置之構成例之俯視圖。  圖2(A)、(B)係表示第1樹脂層、第2樹脂層及其周邊之構成例之剖視圖。  圖3(A)、(B)係表示第1實施方式之控制器晶片之製造方法之一例之剖視圖。  圖4(A)、(B)係表示繼圖3後之製造方法之剖視圖。  圖5(A)、(B)係表示繼圖4後之製造方法之剖視圖。  圖6(A)、(B)係表示繼圖5後之製造方法之剖視圖。  圖7(A)～(C)係表示繼圖6後之製造方法之剖視圖。  圖8係表示繼圖7後之製造方法之剖視圖。  圖9係表示繼圖8後之製造方法之剖視圖。  圖10(A)、(B)係表示控制器晶片之第2面中之金屬凸塊及第1樹脂層之佈局之俯視圖。  圖11係表示第2實施方式之半導體裝置之製造方法之一例之剖視圖。  圖12係表示繼圖11後之製造方法之剖視圖。  圖13係表示第3實施方式之半導體裝置之製造方法之一例之剖視圖。  圖14係表示第4實施方式之半導體裝置之製造方法之一例之概略圖。
1:半導體裝置
10:配線基板
11:絕緣基板
12:配線
13:接觸插塞
14:金屬焊墊
15:焊料球
16:阻焊劑
20:第1樹脂層
30:控制器晶片
31:金屬凸塊
35:第2樹脂層
40:第4樹脂層
50:間隔件
60:記憶體晶片
80:接合線
90:第3樹脂層
F1:第1面
F2:第2面

Claims (20)

  1. 一種半導體裝置，其包含： 基板，其於正面設置有複數個焊墊； 第1半導體晶片，其於與該基板對向之第1面，具有連接於上述複數個焊墊之複數個金屬凸塊； 第1樹脂層，其設置於上述正面與上述第1半導體晶片之間； 第2樹脂層，其於上述基板與上述第1半導體晶片之間，覆蓋上述第1樹脂層及上述金屬凸塊之周圍；及 第3樹脂層，其覆蓋上述基板與上述第1半導體晶片。
  2. 如請求項1之半導體裝置，其中上述基板於內部包含配線，且 上述複數個焊墊連接於上述配線。
  3. 如請求項1之半導體裝置，其中上述第1及上述第2樹脂層包含填料，且上述第2樹脂層中之填料濃度，高於上述第1樹脂層中之填料濃度。
  4. 如請求項1之半導體裝置，其中上述第2樹脂層之熱膨脹係數，小於上述第1樹脂層之熱膨脹係數。
  5. 如請求項1之半導體裝置，其中上述第2樹脂層之彈性模數，大於上述第1樹脂層之彈性模數。
  6. 如請求項1之半導體裝置，其中上述第2樹脂層覆蓋上述第1半導體晶片之側面之一部分、及上述複數個金屬凸塊中之至少1個金屬凸塊之側面。
  7. 如請求項6之半導體裝置，其進而包含設置於上述基板上之第1絕緣材，且 上述第2樹脂層進而覆蓋上述第1絕緣材之一部分。
  8. 如請求項1之半導體裝置，其中上述第1樹脂層呈複數個柱狀。
  9. 如請求項8之半導體裝置，其中自上方觀察上述複數個柱狀之上述第1樹脂層中之一個時之面積，較自上方觀察上述複數個金屬凸塊中之一個時之面積大。
  10. 一種半導體裝置之製造方法，其係 於第1半導體晶片或基板中之一者形成第1樹脂層， 使上述第1半導體晶片或上述基板中之一者所包含之金屬凸塊，對準另一者所包含之焊墊， 於上述第1半導體晶片形成有上述第1樹脂層之情形時，將上述第1樹脂層連接於上述基板，或者，於上述基板形成有上述第1樹脂層之情形時，將上述第1樹脂層連接於上述第1半導體晶片， 於上述基板與上述第1半導體晶片之間，形成包含還原劑之第2樹脂層， 對上述基板或/及上述第1半導體晶片進行第1加熱，以使上述金屬凸塊與上述焊墊相互連接， 使上述第2樹脂層硬化， 以覆蓋上述基板及上述第1半導體晶片之方式，形成第3樹脂層。
  11. 如請求項10之半導體裝置之製造方法，其中上述第1樹脂層係光感光性樹脂，且藉由光微影法而圖案化。
  12. 如請求項10之半導體裝置之製造方法，其中於形成上述第2樹脂層之前，對上述基板或/及上述第1半導體晶片進行第2加熱。
  13. 如請求項12之半導體裝置之製造方法，其中至上述第2加熱、及上述第2加熱後之上述第1加熱，係於不將上述基板暴露於周圍氣體之狀態下進行。
  14. 如請求項10之半導體裝置之製造方法，其中上述第1半導體晶片藉由覆晶法而連接於基板。
  15. 如請求項10之半導體裝置之製造方法，其中於上述第1半導體晶片或上述基板中之一者形成第1樹脂層時，上述第1樹脂層形成於上述第1半導體晶片。
  16. 如請求項10之半導體裝置之製造方法，其中於上述第1半導體晶片或上述基板中之一者形成第1樹脂層時，上述第1樹脂層形成於上述基板。
  17. 如請求項10之半導體裝置之製造方法，其中上述第1樹脂層呈柱狀。
  18. 如請求項10之半導體裝置之製造方法，其中上述第1及上述第2樹脂層包含填充劑，且上述第2樹脂層中之填料濃度，高於上述第1樹脂層中之填料濃度。
  19. 如請求項10之半導體裝置之製造方法，其中上述第2樹脂層之熱膨脹係數，小於上述第1樹脂層之熱膨脹係數。
  20. 如請求項10之半導體裝置之製造方法，其中上述第2樹脂層之彈性模數，大於上述第1樹脂層之彈性模數。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI838816B (zh) * 2022-08-09 2024-04-11 啟碁科技股份有限公司 封裝結構及其製造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6201301B1 (en) * 1998-01-21 2001-03-13 Lsi Logic Corporation Low cost thermally enhanced flip chip BGA
US7331502B2 (en) 2001-03-19 2008-02-19 Sumitomo Bakelite Company, Ltd. Method of manufacturing electronic part and electronic part obtained by the method
JP2003007904A (ja) * 2001-06-27 2003-01-10 Hitachi Ltd 半導体装置
US6762509B2 (en) * 2001-12-11 2004-07-13 Celerity Research Pte. Ltd. Flip-chip packaging method that treats an interconnect substrate to control stress created at edges of fill material
JP5017930B2 (ja) * 2006-06-01 2012-09-05 富士通株式会社 半導体装置、はんだバンプ接続用基板の製造方法及び半導体装置の製造方法
JP5096782B2 (ja) * 2007-04-19 2012-12-12 ルネサスエレクトロニクス株式会社 半導体装置
JP5617548B2 (ja) 2010-11-11 2014-11-05 ソニー株式会社 半導体装置の製造方法
US8710654B2 (en) * 2011-05-26 2014-04-29 Kabushiki Kaisha Toshiba Semiconductor device and manufacturing method thereof
JP2012256737A (ja) * 2011-06-09 2012-12-27 Sony Corp 半導体装置及び半導体装置の製造方法
JP5936968B2 (ja) 2011-09-22 2016-06-22 株式会社東芝 半導体装置とその製造方法
JP6340762B2 (ja) * 2013-07-31 2018-06-13 日立化成株式会社 アンダーフィル材を用いた電子部品装置の製造方法、アンダーフィル材、及び電子部品装置
JP2015053406A (ja) * 2013-09-09 2015-03-19 株式会社東芝 半導体装置
JP6189181B2 (ja) 2013-11-06 2017-08-30 東芝メモリ株式会社 半導体装置の製造方法
TWI616979B (zh) 2014-03-14 2018-03-01 Toshiba Memory Corp 半導體裝置及其製造方法
CN107591475B (zh) * 2017-09-29 2018-11-30 旭宇光电（深圳）股份有限公司 大功率led器件及led芯片固晶方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI838816B (zh) * 2022-08-09 2024-04-11 啟碁科技股份有限公司 封裝結構及其製造方法

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