TW202111831A - 基板貼合裝置、製造系統及半導體裝置之製造方法 - Google Patents

基板貼合裝置、製造系統及半導體裝置之製造方法 Download PDF

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TW202111831A
TW202111831A TW109104864A TW109104864A TW202111831A TW 202111831 A TW202111831 A TW 202111831A TW 109104864 A TW109104864 A TW 109104864A TW 109104864 A TW109104864 A TW 109104864A TW 202111831 A TW202111831 A TW 202111831A
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substrate
alignment
detection element
main surface
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川田原奨
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日商鎧俠股份有限公司
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Abstract

實施形態係關於一種基板貼合裝置、製造系統及半導體裝置之製造方法。 根據實施形態，提供一種具有第1吸附台、第2吸附台及對準部之基板貼合裝置。第1吸附台吸附第1基板。第2吸附台與第1基板對向配置。第2吸附台吸附第2基板。對準部可插入至第1吸附台與第2吸附台之間。對準部具有基座部、第1檢測元件及第2檢測元件。基座部具有第1主面及第2主面。第2主面為第1主面之相反側之面。第1檢測元件配置於第1主面。第2檢測元件配置於第2主面。

Description

基板貼合裝置、製造系統及半導體裝置之製造方法
本實施形態係關於一種基板貼合裝置、製造系統及半導體裝置之製造方法。
基板貼合裝置將2塊基板吸附於2個吸附台，並將2塊基板貼合。此時，較理想為使2塊基板精度良好地貼合。
實施形態提供一種能夠使2塊基板精度良好地貼合之基板貼合裝置、製造系統及半導體裝置之製造方法。
根據本實施形態，提供一種具有第1吸附台、第2吸附台及對準部之基板貼合裝置。第1吸附台吸附第1基板。第2吸附台與第1基板對向配置。第2吸附台吸附第2基板。對準部可插入至第1吸附台與第2吸附台之間。對準部具有基座部、第1檢測元件及第2檢測元件。基座部具有第1主面及第2主面。第2主面為第1主面之相反側之面。第1檢測元件配置於第1主面。第2檢測元件配置於第2主面。
以下，參考圖式詳細地對實施形態之基板貼合裝置進行說明。又，本發明並不由該實施形態限定。 (實施形態)
對實施形態之基板貼合裝置進行說明。基板貼合裝置將2塊基板(例如，2塊晶圓)吸附於2個吸附台，並將2塊基板貼合。此時，較理想為使2塊基板精度良好地貼合。
對此，可考慮研磨第1基板而將其薄板化，自第1基板之背面利用紅外光進行觀察，隔著第1基板之背面將第1基板及第2基板對準。該情形時，以第1基板之基板部分之厚度(例如，背面Si殘膜厚度)薄於能夠透過紅外光之厚度之方式薄板化。藉此，第1基板容易彎曲，於將第1基板及第2基板貼合時容易於界面產生空隙。再者，由於追加第1基板之薄板化步驟，故有伴隨貼合之步驟數增加，製造成本增加之可能性。
再者，可考慮藉由將第1吸附台及第2吸附台之位置對準，而間接地將第1基板及第2基板對準。該情形時，若第1基板相對於第1吸附台之相對位置與第2基板相對於第2吸附台之相對位置互不相同，即便將第1吸附台及第2吸附台之位置對準，第1基板及第2基板之位置亦會偏離，因此，難以提高第1基板及第2基板之對位之精度。
此處，於本實施形態中，於基板貼合裝置中，藉由將兩面配置有檢測元件之對準部於兩面之檢測元件相互對準之狀態下插入2個吸附台之間，並利用對準部之兩面之檢測元件進行2塊基板之對位，以提高低成本之貼合精度為目標。
具體而言，基板貼合裝置1如圖1及圖2所示般構成。圖1係表示基板貼合裝置1之構成之俯視圖，圖2係表示基板貼合裝置1之構成之側視圖。
基板貼合裝置1於將2塊基板貼合之前進行2塊基板之對位，作為其對位之基準(絕對對位基準)，使用兩面配置有檢測元件且兩面之檢測元件相互對準之對準部。例如，基板貼合裝置1具有貼合部10、對準部20、引導部30、校準台40、校準台50、及控制器60。
貼合部10將2塊基板貼合。貼合部10具有吸附台11及吸附台12。吸附台11及吸附台12以使用時相互對向之方式配置。吸附台11於與吸附台12對向之側具有主面11a，吸附台12於與吸附台11對向之側具有主面12a。以下，將與吸附台12之主面12a垂直之方向設為Z方向，將於垂直於Z方向之平面內相互正交之2個方向設為X方向及Y方向。
對準部20作為應貼合之2塊基板之對位中之絕對對位基準發揮功能。對準部20可插入校準台40及校準台50之間(校準執行位置)，可插入吸附台11及吸附台12之間(對準執行位置)。
對準部20如圖3及圖4所示般具有基座部21、複數個檢測元件22-1～22-9、複數個檢測元件23-1～23-9、軌道27、軌道24、複數個驅動機構25-1～25-3、及複數個驅動機構26-1～26-3。圖3係表示對準部20之構成之俯視圖。圖4係表示對準部20之構成之放大剖視圖，表示沿A-A線切割圖3之情形之剖面。
基座部21於XY平面觀察下，可具有將大致H形狀與大致I形狀組合而成之臂狀外形，亦可具有於XY方向上延伸之平板狀外形。圖1中例示基座部21具有臂狀外形之構成。基座部21於+Z側具有主面21a，於-Z側具有主面21b。基座部21具有上部基座211及下部基座212。上部基座211具有沿臂狀外形於XY方向上延伸之主部、及自該部分向+Z方向上升之上升部。下部基座212具有沿臂狀外形於XY方向上延伸之主部、及自該部分向-Z方向上升之上升部。
複數個檢測元件22-1～22-9分別配置於基座部21之主面21a。各檢測元件22-1～22-9按照控制器60之控制，於校準執行位置對校準台40上之基準標記進行拍攝。各檢測元件22-1～22-9亦可包含CCD影像傳感器或CMOS影像傳感器之攝像機。
複數個檢測元件23-1～23-9分別配置於基座部21之主面21b。各檢測元件23-1～23-9按照控制器60之控制，於校準執行位置對校準台50上之基準標記進行拍攝。各檢測元件23-1～23-9亦可包含CCD影像傳感器或CMOS影像傳感器等攝像機。
軌道27於XY平面觀察下藉由基座部21之中央部於Y方向上延伸，+Y側之端部與-Y側之端部分別連接於上部基座211之上升部。複數個檢測元件22-1～22-9可於軌道27上滑動。軌道27為與軌道24不同之構件，複數個檢測元件22-1～22-9可與複數個檢測元件23-1～23-9獨立地於主面21a上移動。
軌道24於XY平面觀察下藉由基座部22之中央部於Y方向上延伸，+Y側之端部與-Y側之端部分別連接於下部基座212之上升部。複數個檢測元件23-1～23-9可於軌道24上滑動。軌道24為與軌道27不同之構件，複數個檢測元件23-1～23-9可與複數個檢測元件22-1～22-9獨立地於主面21b上移動。
複數個驅動機構25-1～25-3按照控制器60之控制，使複數個檢測元件22-1～22-9沿軌道27滑動。複數個驅動機構25-1～25-3與複數個驅動機構26-1～26-3獨立地控制複數個檢測元件22-1～22-9之驅動。藉此，與複數個檢測元件23-1～23-9不同地驅動複數個檢測元件22-1～22-9。
驅動機構25-1按照控制器60之控制，使檢測元件22-1、22-4、22-7沿軌道27滑動。驅動機構25-2按照控制器60之控制，使檢測元件22-2、22-5、22-8沿軌道27滑動。驅動機構25-3按照控制器60之控制，使檢測元件22-3、22-6、22-9沿軌道27滑動。各驅動機構25-1～25-3例如具有線性馬達。各驅動機構25-1～25-3具有設置於檢測元件22-1～22-9與軌道27中之一者之動子及設置於另一者之定子。動子與定子中之一者具有永久磁鐵，另一者具有電磁鐵。
又，於複數個檢測元件22-1～22-9之相對位置關係預先準確地對準之情形時，亦可藉由1個驅動機構25一起驅動複數個檢測元件22-1～22-9。
複數個驅動機構26-1～26-3按照控制器60之控制使複數個檢測元件23-1～23-9沿軌道24滑動。複數個驅動機構26-1～26-3與複數個驅動機構25-1～25-3獨立地控制複數個檢測元件23-1～23-9之驅動。藉此，與複數個檢測元件22-1～22-9不同地驅動複數個檢測元件23-1～23-9。
驅動機構26-1按照控制器60之控制，使檢測元件23-1、23-4、23-7沿軌道24滑動。驅動機構26-2按照控制器60之控制，使檢測元件23-2、23-5、23-8沿軌道24滑動。驅動機構26-3按照控制器60之控制，使檢測元件23-3、23-6、23-9沿軌道24滑動。各驅動機構26-1～26-3例如具有線性馬達。各驅動機構26-1～26-3具有設置於檢測元件23-1～23-9與軌道24中之一者之動子及設置於另一者之定子。動子與定子中之一者具有永久磁鐵，另一者具有電磁鐵。
又，於複數個檢測元件23-1～23-9之相對位置關係預先準確地對準之情形時，亦可藉由1個驅動機構26一起驅動複數個檢測元件23-1～23-9。
引導部30以對準部20能夠移行之方式構成。引導部30引導對應於吸附台11及吸附台12之位置(對準執行位置)與對應於校準台40及校準台50之位置(校準執行位置)之間之對準部20之移動。引導部30具有導軌31、導軌32、支持臂33、驅動機構34、驅動機構35、及驅動機構36。
導軌31以將對應於吸附台11及吸附台12之位置(對準執行位置)與對應於校準台40及校準台50之位置(校準執行位置)之間連接之方式於Y方向上延伸。導軌31具有與導軌32大致相同之Z高度。導軌31配置於吸附台11及吸附台12之-X側，且配置於校準台40及校準台50之-X側。
導軌32以將對準執行位置與校準執行位置之間連接之方式於Y方向上延伸。導軌32具有與導軌31大致相同之Z高度。導軌32配置於吸附台11及吸附台12之+X側，且配置於校準台40及校準台50之+X側。
支持臂33於XY平面觀察下與導軌31及導軌32交叉配置。支持臂33之-X側之端部可沿導軌31滑動，+X側之端部可沿導軌32滑動。再者，支持臂33將對準部20(基座部21)支持為可於導軌31及導軌32之間沿X方向滑動。
驅動機構34按照控制器60之控制，使基座部21沿支持臂33於X方向上滑動。驅動機構34例如具有線性馬達。驅動機構34具有設置於基座部21與支持臂33中之一者之動子及設置於另一者之定子。動子與定子中之一者具有永久磁鐵，另一者具有電磁鐵。
再者，驅動機構34按照控制器60之控制，使基座部21繞支持臂33之軸(繞X軸之旋轉方向)旋轉。驅動機構34例如進而具有旋轉馬達。
驅動機構35按照控制器60之控制，使支持臂33之-X側之端部沿導軌31於Y方向上滑動。驅動機構35例如具有線性馬達。驅動機構35具有設置於支持臂33與導軌31中之一者之動子及設置於另一者之定子。動子與定子中之一者具有永久磁鐵，另一者具有電磁鐵。
驅動機構36按照控制器60之控制，使支持臂33之+X側之端部沿導軌32於Y方向上滑動。驅動機構36例如具有線性馬達。驅動機構36具有設置於支持臂33與導軌32中之一者之動子及設置於另一者之定子。動子與定子中之一者具有永久磁鐵，另一者具有電磁鐵。
圖2所示之校準台40配置於對準部20位於校準執行位置時應成為對準部20之+Z側之位置。校準台40具有於XY方向上延伸之大致平板形狀，於-Z側之主面40a上具有複數個校準用基準標記41-1～41-3。
校準台50配置於對準部20位於校準執行位置時應成為對準部20之-Z側之位置。校準台50具有於XY方向上延伸之大致平板形狀，於+Z側之主面50a上具有複數個校準用基準標記51-1～51-3。
控制器60總括地控制基板貼合裝置1之各部。例如，如圖5～圖8B所示般進行動作。圖5係表示基板貼合裝置1之動作之流程圖。圖6A～圖8B係表示基板貼合裝置1之動作之圖。
如圖6A所示，控制器60使對準部20配置於校準執行位置，開始對準部20之校準(S1)。控制器60以複數個檢測元件22對校準台40之複數個基準標記41進行拍攝，以複數個檢測元件23對校準台50之複數個基準標記51進行拍攝。控制器60獲得基準標記41之圖像，藉由圖像處理求出自檢測元件22之光軸之目標位置偏移之位置偏移量，控制驅動機構25，以修正位置偏移量之方式驅動檢測元件22。控制器60獲得基準標記51之圖像，藉由圖像處理求出自檢測元件23之光軸之目標位置偏移之位置偏移量，控制驅動機構26，以修正位置偏移量之方式驅動檢測元件23。
又，此時，亦可於吸附台11吸附基板W1，於吸附台12吸附基板W2。
如圖6B所示，控制器60使對準部20翻轉(S2)，進行對準部20之校準。控制器60以複數個檢測元件23對校準台40之複數個基準標記41進行拍攝，以複數個檢測元件22對校準台50之複數個基準標記51進行拍攝。控制器60獲得基準標記41之圖像，藉由圖像處理求出自檢測元件23之光軸之目標位置偏移之位置偏移量及校準台40、50間之位置偏移量，控制驅動機構25，以修正檢測元件23之位置偏移量及校準台40、50間之位置偏移量的方式驅動檢測元件23。控制器60獲得基準標記51之圖像，藉由圖像處理求出檢測元件22之位置偏移量及校準台40、50間之位置偏移量，控制驅動機構26，以修正檢測元件22之位置偏移量及校準台40、50間之位置偏移量的方式驅動檢測元件22。
控制器60重複S1、S2之處理，直至S1、S2中針對各檢測元件22、23求出之位置偏移量落在容許範圍內(於S3中為NG)。
當S1、S2中針對各檢測元件22、23求出之位置偏移量落在容許範圍內且位置調整為OK(於S3中為OK)時，視為對準部20能夠作為對準之基準發揮功能，控制器60使對準部20自校準執行位置移動至對準執行位置(S4)。控制器60控制引導部30，使對準部20自圖6C所示之校準執行位置移動至圖7A所示之對準執行位置。
又，於圖6A、圖7A中，例示於各檢測元件22成為基座部21之+Z側且各檢測元件22成為基座部21之-Z側之姿態下位置調整為OK之情形。當各檢測元件23成為基座部21之+Z側且各檢測元件22成為基座部21之-Z側之姿態下位置調整為OK之情形時，使對準部20以該姿態自校準執行位置移動至對準執行位置。
於貼合部11中，如圖7A所示，控制器60控制對準部20，以檢測元件22對基板W1之-Z側之面上之接合對象之電極圖案進行拍攝，以檢測元件23對基板W2之+Z側之面上之接合對象之電極圖案進行拍攝。控制器60獲得基板W1之電極圖案圖像及基板W2之電極圖案圖像，藉由圖像處理求出基板W1及基板W2之間之位置偏移量，控制吸附台用驅動機構(未圖示)，如圖7B所示，以修正基板W1及基板W2之間之位置偏移量之方式於XY方向上相對地驅動吸附台11及吸附台12。控制器60重複該處理，直至所求出之位置偏移量落在容許範圍內(於S11中為NG)。藉此，可準確地對準基板W1及基板W2。
當所求出之位置偏移量落在容許範圍內且為對位OK(於S11中為OK)時，視為以對準部20進行之對準完成，控制器60使對準部20自對準執行位置退避至校準執行位置(S12)。控制器60控制引導部30，使對準部20自圖7B所示之對準執行位置退避至圖8A所示之校準執行位置。
控制器60控制吸附台用驅動機構(未圖示)，如圖8B所示，使吸附台11向-Z方向下降(S13)，使基板W1與基板W2接觸。藉此，基板W1及基板W2貼合(S14)。
另一方面，當於S12中將對準部20退避至校準執行位置時，若沒有接下來要利用貼合部10貼合之基板(於S5中為否)，控制器60使對準部20待機。若有接下來要利用貼合部10貼合之基板(於S5中為是)，控制器60將處理返回至S1，使對準部20對下一基板執行校準。藉此，能夠與貼合部11中之基板W1、W2之貼合並行而有效率地進行對準部20之校準。
如以上所述，於本實施形態中，於基板貼合裝置1中，將兩面21a、21b配置有檢測元件22、23之對準部20於兩面21a、21b之檢測元件22、23相互對準之狀態下插入2個吸附台11、12之間，利用對準部20之兩面21a、21b之檢測元件22、23進行2塊基板W1、W2之對位。藉此，能夠將對準部20用作對位之絕對基準，能夠直接對準基板W1、W2之接合對象(例如，電極圖案)。其結果，能夠高速且低成本地實現基板貼合裝置1中之2塊基板W1、W2之貼合精度之提高。
又，於校準台40中之基準標記41與校準台50中之基準標記51準確地對準之情形時，可省略求出校準台40、50間之位置偏移之處理。該情形時，亦省略圖5所示之S2。
再者，亦可使用基板貼合裝置1應用於如圖9所示之製造系統SYS。圖9係表示包含實施形態之變化例之基板貼合裝置1之製造系統SYS之構成之俯視圖。製造系統SYS具有複數個基板貼合裝置1-1～1-6及搬送系統2。各基板貼合裝置1-1～1-6可與實施形態之基板貼合裝置1相同之方式構成。搬送系統2以橫跨各基板貼合裝置1-1～1-6之方式配置。
例如，搬送系統2具有於X方向上延伸之搬送軌道2b、及可沿搬送軌道2b於X方向上移動之搬送機器臂2a。基板貼合裝置1-1～1-3配置於搬送系統2之+Y側，並且排列於沿搬送軌道2b之X方向上。基板貼合裝置1-4～1-6配置於搬送系統2之-Y側，並且排列於沿搬送軌道2b之X方向上。
藉此，能夠於複數個基板貼合裝置1-1～1-6之間進一步使貼合部11中之基板W1、W2之貼合與對準部20之校準之並行處理並行，因此能夠進一步有效率地進行各對準部20之校準。
對本發明之若干實施形態進行了說明，但該等實施形態僅係作為例子提出者，並不意圖限定發明之範圍。該等新穎之實施形態能夠以其它各種形態實施，且於不脫離發明之主旨之範圍內可進行各種省略、替換、變更。該等實施形態及其變化包含於發明之範圍及主旨，並且包含於請求項所記載之發明及其均等之範圍內。 [相關申請案]
本案享有於2019年9月5日提出申請之日本專利申請案2019-162027號之優先權之利益，並將該日本專利申請案之所有內容援引至本案中。
1:基板貼合裝置 1-1～1-6:基板貼合裝置 2:搬送系統 2a:搬送機器臂 2b:搬送軌道 10:貼合部 11:吸附台 12:吸附台 12a:吸附台12之主面 20:對準部 21:基座部 21a:主面 21b:主面 22-1～22-9:複數個檢測元件 23-1～23-9:複數個檢測元件 24:軌道 25:驅動機構 25-1～25-3:複數個驅動機構 26:驅動機構 26-1～26-3:複數個驅動機構 27:軌道 30:引導部 31:導軌 32:導軌 33:支持臂 34:驅動機構 35:驅動機構 36:驅動機構 40:校準台 40a:主面 41:複數個基準標記 41-1～41-3:複數個校準用基準標記 50:校準台 50a:主面 51:複數個基準標記 51-1～51-3:複數個校準用基準標記 60:控制器 211:上部基座 212:下部基座 S1～S14:步驟 SYS:製造系統 W1:基板 W2:基板
圖1係表示實施形態之基板貼合裝置之構成之俯視圖。 圖2係表示實施形態之基板貼合裝置之構成之側視圖。 圖3係表示實施形態中之對準部之構成之俯視圖。 圖4係表示實施形態中之對準部之構成之放大剖視圖。 圖5係表示實施形態之基板貼合裝置之動作之流程圖。 圖6A～圖6C係表示實施形態之基板貼合裝置之動作之圖。 圖7A及圖7B係表示實施形態之基板貼合裝置之動作之圖。 圖8A及圖8B係表示實施形態之基板貼合裝置之動作之圖。 圖9係表示包含實施形態之變化例之基板貼合裝置之製造系統之構成之俯視圖。
1:基板貼合裝置
10:貼合部
11:吸附台
12:吸附台
20:對準部
30:引導部
31:導軌
32:導軌
40:校準台
50:校準台

Claims (20)

  1. 一種基板貼合裝置，其具備： 第1吸附台，其吸附第1基板； 第2吸附台，其與上述第1基板對向配置，吸附第2基板；以及 對準部，其可插入至上述第1吸附台與上述第2吸附台之間；且 上述對準部具有： 基座部，其具有第1主面及上述第1主面之相反側之第2主面； 第1檢測元件，其配置於上述第1主面；以及 第2檢測元件，其配置於上述第2主面。
  2. 如請求項1之基板貼合裝置，其中 上述對準部構成為上述第1檢測元件及上述第2檢測元件可相互獨立地移動。
  3. 如請求項2之基板貼合裝置，其進而具備： 控制器，其將上述第1檢測元件之第1光軸與上述第2檢測元件之第2光軸對準，並於上述第1光軸及上述第2光軸對合之狀態下，使上述對準部插入至上述第1吸附台與上述第2吸附台之間。
  4. 如請求項3之基板貼合裝置，其中 上述對準部於插入至上述第1吸附台與上述第2吸附台之間之狀態下，藉由上述第1檢測元件獲得上述第1基板之圖像，藉由上述第2檢測元件獲得上述第2基板之圖像， 上述控制器以根據上述獲得之上述第1基板之圖像及上述第2基板之圖像而修正上述第1基板與上述第2基板之位置偏移之方式，控制上述第1吸附台及上述第2吸附台。
  5. 如請求項2之基板貼合裝置，其中 上述對準部進而具有： 第1驅動機構，其可沿上述第1主面移動上述第1檢測元件；以及 第2驅動機構，其可沿上述第2主面移動上述第2檢測元件； 上述基板貼合裝置進而具有： 第1校準台，其相對於上述基座部配置於上述第1主面側，且包含第1基準標記；以及 第2校準台，其相對於上述基座部配置於上述第2主面側，且包含第2基準標記。
  6. 如請求項5之基板貼合裝置，其中 上述對準部進而具有： 第1軌道，其於上述第1主面側連接於上述基座部，且可供上述第1檢測元件滑動；以及 第2軌道，其於上述第2主面側連接於上述基座部，且可供上述第2檢測元件滑動； 上述第1驅動機構使上述第1檢測元件沿上述第1軌道滑動， 上述第2驅動機構使上述第2檢測元件沿上述第2軌道滑動。
  7. 如請求項5之基板貼合裝置，其進而具備： 控制器，其以如下方式控制上述第1驅動機構及上述第2驅動機構：於上述對準部位於上述第1校準台及上述第2校準台之間之校準執行位置之狀態下，將上述第1檢測元件之第1光軸對準上述第1基準標記，將上述第2檢測元件之第2光軸對準上述第2基準標記。
  8. 如請求項5之基板貼合裝置，其進而具備： 引導部，其引導上述對準部於上述第1校準台及上述第2校準台之間之校準執行位置、與上述第1吸附台及上述第2吸附台之間之對準執行位置之間移動。
  9. 如請求項8之基板貼合裝置，其中 上述引導部於上述對準部位於上述校準執行位置時，可將上述對準部翻轉。
  10. 如請求項8之基板貼合裝置，其中 上述引導部具有： 第1導軌，其自上述校準執行位置延伸至上述對準執行位置； 支持臂，其支持上述基座部，可沿上述第1導軌滑動； 第3驅動機構，其使上述基座部沿上述支持臂滑動；以及 第4驅動機構，其使上述支持臂沿上述第1導軌滑動。
  11. 如請求項10之基板貼合裝置，其中 上述第3驅動機構使上述基座部繞上述支持臂之軸旋轉。
  12. 如請求項10之基板貼合裝置，其中 上述引導部進而具有： 第2導軌，其隔著上述基座部配置於上述第1導軌之相反側，自上述校準執行位置延伸至上述對準執行位置；以及 第5驅動機構，其使上述支持臂沿上述第2導軌滑動； 上述支持臂可沿上述第1導軌及上述第2導軌滑動。
  13. 如請求項8之基板貼合裝置，其進而具備： 控制器，其於上述對準執行位置使上述第1吸附台及上述第2吸附台相互靠近，而將上述第1基板與上述第2基板貼合。
  14. 如請求項13之基板貼合裝置，其中 上述控制器以如下方式進行控制：並行地進行於上述對準執行位置將上述第1基板及上述第2基板貼合、及於上述校準執行位置校準上述對準部。
  15. 一種製造系統，其各自具備複數個如請求項1之基板貼合裝置。
  16. 如請求項15之製造系統，其進而具備： 搬送系統，其以橫跨上述複數個基板貼合裝置之方式配置。
  17. 如請求項15上述之製造系統，其中 上述複數個基板貼合裝置可相互並行地進行複數個基板之貼合與對準部之校準之並行處理。
  18. 一種半導體裝置之製造方法，其具備： 於包括具有第1主面及上述第1主面之相反側之第2主面之基座部、配置於上述第1主面之第1檢測元件、及配置於上述第2主面之第2檢測元件之對準部，將上述第1檢測元件之第1光軸與上述第2檢測元件之第2光軸對準； 於上述第1光軸及上述第2光軸對合之狀態下，使上述對準部插入至吸附第1基板之第1吸附台與吸附與上述第1基板對向配置之第2基板之第2吸附台之間； 使用上述對準部，修正上述第1基板與上述第2基板之位置偏移；以及 於上述修正後，將上述第1基板與上述第2基板貼合而製造半導體裝置。
  19. 如請求項18半導體裝置之製造方法，其中 將上述第1光軸與上述第2光軸對準之步驟包括： 使上述對準部位於第1校準台與第2校準台之間，上述第1校準台相對於上述基座部配置於上述第1主面側，且包含第1基準標記，上述第2校準台相對於上述基座部配置於上述第2主面側，且包含第2基準標記；以及 於上述對準部位於上述第1校準台與上述第2校準台之間之狀態下，將上述第1光軸對準上述第1基準標記，將上述第2光軸對準上述第2基準標記。
  20. 如請求項18之半導體裝置之製造方法，其中 修正上述位置偏移之步驟包括： 於上述對準部插入至上述第1吸附台與上述第2吸附台之間之狀態下，藉由上述第1檢測元件獲得上述第1基板之圖像，藉由上述第2檢測元件獲得上述第2基板之圖像；以及 以根據上述獲得之上述第1基板之圖像及上述第2基板之圖像而修正上述第1基板與上述第2基板之位置偏移之方式，控制上述第1吸附台及上述第2吸附台。
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Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09307073A (ja) * 1996-05-10 1997-11-28 Fujitsu Ltd メモリ装置
JP4239049B2 (ja) 1999-02-12 2009-03-18 ソニー株式会社 部品装着装置及びその装置における撮像手段の光軸オフセット量測定方法
JP3939617B2 (ja) * 2002-08-23 2007-07-04 三菱電機株式会社 位置合わせ装置および撮像手段の位置合わせ方法
JP4548239B2 (ja) 2005-06-21 2010-09-22 パナソニック株式会社 基板接合方法および基板接合装置
KR100898793B1 (ko) * 2005-12-29 2009-05-20 엘지디스플레이 주식회사 액정표시소자용 기판 합착 장치
CN103258762B (zh) 2007-08-10 2016-08-03 株式会社尼康 基板贴合装置及基板贴合方法
KR20100052167A (ko) * 2008-11-10 2010-05-19 삼성전자주식회사 웨이퍼 본딩 방법 및 웨이퍼 본딩 장비
JP5551482B2 (ja) * 2009-04-08 2014-07-16 芝浦メカトロニクス株式会社 基板貼り合わせ装置及び貼り合わせ基板の製造方法
JP5471031B2 (ja) * 2009-05-22 2014-04-16 株式会社ニコン ステージ装置、位置合わせ装置および基板貼り合わせ装置
JP2013187393A (ja) 2012-03-08 2013-09-19 Tokyo Electron Ltd 貼り合わせ装置及び貼り合わせ方法
JP6344240B2 (ja) * 2012-10-26 2018-06-20 株式会社ニコン 基板位置合わせ装置、基板貼り合わせ装置、基板位置合わせ方法、及び基板貼り合わせ方法
JP2014194520A (ja) * 2013-02-28 2014-10-09 Hitachi High-Technologies Corp 基板貼り合わせ装置及び基板貼り合わせ用具
JP5626710B2 (ja) 2013-09-24 2014-11-19 株式会社ニコン 基板貼り合わせ方法及び基板貼り合わせ装置
JP2015158603A (ja) * 2014-02-24 2015-09-03 株式会社Sat 基板の貼り合せ装置
JP6421048B2 (ja) 2015-02-06 2018-11-07 東京エレクトロン株式会社 接合装置、接合システム、接合方法、プログラム、および情報記憶媒体
JP6718281B2 (ja) 2016-04-01 2020-07-08 株式会社大日本科研 基板の位置決め方法および基板の位置決め装置
JP6967980B2 (ja) * 2018-01-23 2021-11-17 東京エレクトロン株式会社 接合方法、および接合装置

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