TW202101542A - 處理裝置(二) - Google Patents

處理裝置(二) Download PDF

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TW202101542A
TW202101542A TW108148558A TW108148558A TW202101542A TW 202101542 A TW202101542 A TW 202101542A TW 108148558 A TW108148558 A TW 108148558A TW 108148558 A TW108148558 A TW 108148558A TW 202101542 A TW202101542 A TW 202101542A
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heat treatment
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門部雅人
名須川信也
似鳥弘彌
菊池一行
金子裕史
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日商東京威力科創股份有限公司
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Abstract

本發明之課題為提供一種可降低具有複數製程模組之處理裝置中的佔置空間之技術。
本揭示一樣態之處理裝置具有:連接配置之複數製程模組;以及載置模組,係收容有載置器,該載置器係收納有藉由該複數製程模組來進行熱處理之基板;各該複數製程模組具備:熱處理單元,係包含有會收容並對複數片基板進行處理之處理容器;以及氣體供應單元,係配置於該熱處理單元的一側面,且會將氣體供應至該處理容器內。

Description

處理裝置(二)
本揭示係關於一種處理裝置。
已知有一種於處理容器的背面或側面配置有氣體供應箱之處理裝置(參見例如專利文獻1~3)。
[先前技術文獻]
[專利文獻]
專利文獻1:日本特開2001-156009號公報
專利文獻2:日本特開2002-170781號公報
專利文獻3:日本特開2003-31562號公報
本揭示係提供一種可降低具有複數製程模組之處理裝置中的佔置空間之技術。
本揭示一樣態之處理裝置具有:連接配置之複數製程模組;以及載置模組,係收容有載置器,該載置器係收納有藉由該複數製程模組來進行熱處理之基板;各該複數製程模組具備:熱處理單元,係包含有會收容並對複數片基板進行處理之處理容器;以及氣體供應單元,係配置於該熱處理單元的一側面,且會將氣體供應至該處理容器內。
依據本揭示,便可降低具有複數製程模組之處理裝置中的佔置空間。
1:處理裝置
20:載置模組
40:製程模組
41:熱處理單元
412a:氣體導入埠
412b:排氣埠
42:載置單元
43:氣體供應單元
44:排氣導管
45:RCU單元
46:分流導管
47:控制單元
48:地板箱
411:熱處理爐
412:處理容器
413:加熱器
414:晶舟
415:擋門
416:保溫筒
417:蓋體
50:晶圓搬送模組
51:晶圓搬送機構
F:地板
W:晶圓
圖1係顯示第1實施型態之處理裝置的構成例之立體圖(1)。
圖2係顯示第1實施型態之處理裝置的構成例之立體圖(2)。
圖3係顯示第1實施型態之處理裝置的構成例之立體圖(3)。
圖4為圖1至圖3之處理裝置的側視圖。
圖5係顯示第1實施型態之處理裝置的其他構成例之圖式。
圖6係顯示第2實施型態之處理裝置的構成例之立體圖。
圖7係顯示第2實施型態之處理裝置的其他構成例之立體圖。
以下,參閱添附圖式來針對本揭示之非限定性的例示實施型態加以說明。所添附之所有圖式中,針對相同或相對應的組件或零件則賦予相同或相對應的參考符號而省略重複說明。
〔第1實施型態〕
針對第1實施型態之處理裝置做說明。圖1至圖3係顯示第1實施型態之處理裝置的構成例之立體圖,且為分別從不同方向來觀看處理裝置時之圖式。圖4為圖1至圖3之處理裝置的側視圖。以下,係以處理裝置的左右方向作為X方向,以前後方向作為Y方向,並以高度方向作為Z方向來加以說明。
如圖1至圖4所示,處理裝置1係具有載置模組20與處理模組30。
載置模組20係內部為例如大氣氛圍下。載置模組20為會將收納有基板一範例(即半導體晶圓,以下稱作「晶圓W」。)之載置器C在處理裝置1內的後述要素間做搬送,或從外部搬入至處理裝置1內,或從處理裝置1朝外部搬出之區域。載置器C可為例如FOUP(Front-Opening Unified Pod)。載置模組20係具有第1搬送部21,以及位在第1搬送部21的後方之第2搬送部26。
第1搬送部21舉一例,係左右地設置有2個載置埠22。載置埠22為當載置器C被搬入至處理裝置1時,會接收載置器C之搬入用的載置台。載置埠22係設置於框體的壁所開放之部位處,可從外部來朝處理裝置1做存取。第1搬送部21係設置有用以保管載置器C之1個或複數個儲存器(圖中未顯示)。
第2搬送部26係配置有FIMS埠(圖中未顯示)。FIMS埠係例如上下地並排設置為2個。FIMS埠為相對於處理模組30內的後述熱處理爐411來將載置器C內的晶圓W搬入及搬出之際會保持載置器C之保持台。FIMS埠可於前後方向上移動自如。又,第2搬送部26亦與第1搬送部21同樣地設置有用以保管載置器C之1個或複數個儲存器(圖中未顯示)。
第1搬送部21與第2搬送部26間係設置有會在載置埠22、儲存器及FIMS埠間搬送載置器C之載置器搬送機構(圖中未顯示)。
處理模組30為從載置器C取出晶圓W,來對晶圓W進行各種處理之模組。為了防止晶圓W形成有氧化膜,處理模組30的內部係成為非活性氣體氛圍,例如氮氣氛圍。處理模組30係具有4個製程模組40與晶圓搬送模組50。
製程模組40係連接配置於前後方向。各製程模組40係具有熱處理單元41、載置單元42、氣體供應單元43、排氣導管44、RCU單元45、分流導管46、控制單元47及地板箱48。
熱處理單元41為會收納複數片(例如25片~150片)晶圓W來進行特定的熱處理之單元。熱處理單元41係具有熱處理爐411。
熱處理爐411係具有處理容器412及加熱器413。
處理容器412係用以收納為基板保持具一範例之晶舟414。晶舟414係由例如石英所形成,且為圓筒形狀,會多層地保持複數片晶圓W。處理容器412係設置有氣體導入埠412a及排氣埠412b。
氣體導入埠412a為會將氣體導入至處理容器412內之埠口。氣體導入埠412a較佳宜配置於氣體供應單元43一側。藉此,便可縮短氣體供應單元43與氣體導入埠412a間的配管長度。於是,便可獲得能夠降低配管組件或配管加熱器的使用量、降低配管加熱器的消耗電功率、降低維修保養時的吹淨範圍、以及降低雜質朝處理容器412內的混入風險等之效果。又,氣體導入埠412a的設置位置較佳宜在複數製程模組40間為相同。藉此,便可使氣體供應單元43與氣體導入埠412a之間的配管長度在複數製程模組40間為一致,從而可縮小因機差而導致的處理差異。
排氣埠412b為會將處理容器412內的氣體排出之埠口。排氣埠412b較佳宜配置在排氣導管44一側。藉此,由於氣體導入埠412a與排氣埠412b係挾置著處理容器412而對向配置,故可使處理容器412內的氣體流動變得單純。又,由於可將氣體導入埠412a與排氣埠412b設置於相互分離之位置處,故當處理容器412設置有複數氣體導入埠412a的情況,便可確保充分的安裝位置。又,設置有排氣埠412b之位置較佳宜在複數製程模組40間為相同。藉此,便可使複數製程模組40間的排氣傳導率為一致,從而可縮小因機差而導致的處理差異。
加熱器413係設置於處理容器412的周圍,為例如圓筒狀。加熱器413會加熱處理容器412內所收納的晶圓W。處理容器412的下方係設置有擋門415。擋門415為用以在晶舟414從熱處理爐411被搬出到下一晶舟414被搬入的期間來封閉熱處理爐411的下端之門。
載置單元42係設置在熱處理單元41的下方,且係透過地板箱48而設置在地板F。載置單元42中,晶舟414係透過保溫筒416而被載置於蓋體417上。晶舟414係由石英、碳化矽等耐熱材料所形成,且於上下方向具有特定間隔來略水平地保持晶圓W。蓋體417係被支撐在升降機構(圖中未顯示),而藉由升降機構來相對於處理容器412搬入或搬出晶舟414。又,載置單元42亦具有作為會冷卻熱處理單元41中所處理的晶圓W之空間之功能。
氣體供應單元43係遠離地板F而配置在熱處理單元41的側面。氣體供應單元43係配置為在俯視觀看下會與例如晶圓搬送模組50相重疊,氣體供應單元43係包含有用以將特定流量的處理氣體或吹淨氣體供應至處理容器412內之壓力調整器、質流控制器、閥等。
排氣導管44係挾置著熱處理單元41而與氣體供應單元43呈對向配置。排氣導管44係包含有會連接處理容器412內與真空幫浦(圖中未顯示)之排氣配管、會加熱排氣配管之配管加熱器等。
RCU單元45係配置在熱處理單元41的頂部。RCU單元45為會生成被供應至分流導管460的冷媒之單元,係包含有熱交換器、送風機、閥、配管等。
分流導管46係挾置著熱處理單元41的側面(例如熱處理單元41)而設置於與氣體供應單元43呈對向之位置處。分流導管46會將從RCU單元45被送入的冷媒分流,來供應至處理容器412與加熱器413之間的空間。藉此,便能夠以短時間來冷卻處理容器412。
控制單元47係配置於熱處理單元41的頂部。控制單元47係包含有會控制製程模組40之各部的動作之控制機器等。控制機器會控制例如氣體供應單元43的動作來調整被供應至處理容器412內之處理氣體或吹淨氣體的流量。
晶圓搬送模組50為基板搬送模組一範例,係相對於複數製程模組40而共通地設置為1個。換言之,複數製程模組40係具有共通的晶圓搬送模組50。晶圓搬送模組50係橫跨複數製程模組40的一側面來加以配置,且係透過地板箱48而設置在地板F。晶圓搬送模組50係設置有為基板搬送機構一範例之晶圓搬送機構51。晶圓搬送機構51會在FIMS埠所載置之載置器C內與製程模組40的載置單元42內所載置之晶舟414間進行晶圓W的傳遞。晶圓搬送機構51係具有例如複數夾具,可同時移載複數片晶圓W。藉此,便可縮短晶圓W的搬送所需時間。此外,夾具亦可為1個。
如此般地,處理裝置1中係相對於1個載置模組20而設置有複數製程模組40。藉此,相較於相對於1個載置模組20而設置有1個製程模組40之情況,便可縮小處理裝置1的設置面積。於是,便可提高每單位面積的生產性。
如以上的說明,依據第1實施型態之處理裝置1,係相對於1個載置模組20而連接配置有複數製程模組40。又,各複數製程模組40係具有包含有會收納並處理複數片晶圓W的處理容器412之熱處理單元41,以及配置在該熱處理單元41的一側面來將氣體供應至處理容器412內之氣體供應單元43。藉此,便可降低具有複數製程模組40之處理裝置1中的佔置空間。又,可容易地進行製程模組40的維修保養。具體而言,由於是在晶圓搬送模組50的上方來確保空間,故可容易地從晶圓搬送模組50一側來進行氣體供應單元43的維修保養。又,由於可在排氣導管44一側確保較寬廣的空間,故可容易地進行熱處理單元41的維修保養。
此外,上述實施型態中雖係說明處理裝置為單獨配置之情況,但處理裝置亦可鄰接地配置為複數個。圖5係顯示第1實施型態之處理裝置的其他構成例之圖式。圖5之範例中,2個處理裝置1A、1B係相鄰接地配置在左右方向上。此外,2個處理裝置1A、1B可分別與前述處理裝置1為相同的構成。
〔第2實施型態〕
針對第2實施型態之處理裝置做說明。圖6係顯示第2實施型態之處理裝置的構成例之立體圖。
如圖6所示,第2實施型態之處理裝置1C係相對於晶圓搬送模組50而於兩側(圖6之+X方向及-X方向)配置有複數製程模組40-1~40-8,這一點與第1實施型態之處理裝置1不同。以下,便以和第1實施型態的差異點為中心來加以說明。
處理裝置1C係具有載置模組20-1、20-2及處理模組30。
載置模組20-1、20-2可分別與第1實施型態之載置模組20為相同的構成。又,亦可僅具有載置模組20-1、20-2中的任一者。亦即,處理裝置1C只要具有1個以上的載置模組20即可。
處理模組30為會從載置模組20-1、20-2內的載置器C來取出晶圓W並對晶圓W進行各種處理之模組。為了防止晶圓W形成有氧化膜,處理模組30的內部係成為非活性氣體氛圍,例如氮氣氛圍。處理模組30係具有8個製程模組40-1~40-8及1個晶圓搬送模組50。
製程模組40-1~40-4係配置於晶圓搬送模組50的一側(圖6之-X方向側)。製程模組40-1~40-4係從載置模組20-1側依序地連接配置於前後方向(圖6之Y方向)。各製程模組40-1~40-4係與製程模組40同樣地具有熱處理單元41、載置單元42、氣體供應單元43、排氣導管44、RCU單元45、分流導管46、控制單元47及地板箱48。
製程模組40-5~40-8係配置於晶圓搬送模組50的另一側(圖6之+X方向側)。製程模組40-5~40-8係從載置模組20-2側依序地連接配置於前後方向(圖6之Y方向)。各製程模組40-5~40-8係與製程模組40同樣地具有熱處 理單元41、載置單元42、氣體供應單元43、排氣導管44、RCU單元45、分流導管46、控制單元47及地板箱48。
製程模組40-1~40-4與製程模組40-5~40-8係挾置著晶圓搬送模組50而對向配置。亦即,製程模組40-1~40-4所包含之氣體供應單元43係配置於熱處理單元41中之製程模組40-5~40-8側的側面。又,製程模組40-5~40-8所包含之氣體供應單元43係配置於熱處理單元41中之製程模組40-1~40-4側的側面。
晶圓搬送模組50為基板搬送模組一範例,且係相對於8個製程模組40-1~40-8而共通地設置為1個。換言之,8個製程模組40-1~40-8係具有共通的晶圓搬送模組50。晶圓搬送模組50係配置於製程模組40-1~40-4與製程模組40-5~40-8之間,且係透過地板箱48而設置在地板F。晶圓搬送模組50係設置有為基板搬送機構一範例之晶圓搬送機構51(參見圖4)。晶圓搬送機構51會在FIMS埠所載置之載置器C內與製程模組40-1~40-8的載置單元42內所載置之晶舟414間進行晶圓W的傳遞。晶圓搬送機構51係具有例如複數夾具,可同時移載複數片晶圓W。藉此,便可縮短晶圓W的搬送所需時間。另外,夾具亦可為1個。
依據第2實施型態之處理裝置1C,係相對於載置模組20-1而連接配置有4個製程模組40-1~40-4,且相對於載置模組20-2而連接配置有4個製程模組40-5~40-8。又,各製程模組40-1~40-8係具有包含有會收納並處理複數片晶圓W的處理容器412之熱處理單元41,以及配置於該熱處理單元41的一側面且會將氣體供應至處理容器412內之氣體供應單元43。藉此,便可降低具有複數製程模組40-1~40-8之處理裝置1C中的佔置空間。
此外,當被要求較少批次,例如被要求每1個製程模組的晶圓處理片數為25片左右之情況,為了維持處理裝置的生產性,則較佳宜增加處理裝置所具備之製程模組的數量。但在增加製程模組之數量的情況,若使得所有製程模組皆連接配置於前後方向(圖6之Y方向),則設置面積便會變大。
因此,依據第2實施型態之處理裝置1C,係挾置著晶圓搬送模組50而於兩側來分別將複數製程模組連接配置於前後方向。藉此,由於晶圓搬 送模組50的設置面積不會增大,故可較將所有製程模組皆連接配置於前後方向之情況而更為降低佔置空間。
接下來,針對第2實施型態之處理裝置的變形例加以說明。圖7係顯示第2實施型態之處理裝置的其他構成例之立體圖。
圖7所示之處理裝置1D中,氣體供應單元43係配置在熱處理單元41的上方,例如RCU單元45及控制單元47的上面,這一點與圖6所示之處理裝置1C不同。此外,關於其他點,則可與處理裝置1C相同。
依據圖7所示之處理裝置1D,由於氣體供應單元43係配置在熱處理單元41的上方,故可使熱處理單元41的側面成為僅有氣體配管會通過之區域。於是,便可在熱處理單元41的側邊,且為晶圓搬送模組50的上方來確保維修保養用的空間。其結果,便可同時達成維修保養性的確保與省空間化。
本說明書所揭示之實施型態應被認為所有要點僅為例示而非用以限制本發明之內容。上述實施型態可在未背離添附的申請專利範圍及其要旨之範圍內,而以各種型態來做省略、置換或變更。
此外,上述實施型態中,雖係針對連接配置有4個製程模組40之情況來加以說明,但製程模組40的數量並未侷限於此。例如,亦可連接配置有2個或3個製程模組40,抑或亦可連接配置有5個以上的製程模組40。
40:製程模組
41:熱處理單元
412a:氣體導入埠
412b:排氣埠
42:載置單元
43:氣體供應單元
44:排氣導管
45:RCU單元
46:分流導管
47:控制單元
48:地板箱
411:熱處理爐
412:處理容器
413:加熱器
414:晶舟
415:擋門
416:保溫筒
417:蓋體
50:晶圓搬送模組
51:晶圓搬送機構
F:地板
W:晶圓

Claims (8)

  1. 一種處理裝置,具有:
    連接配置之複數製程模組;以及
    載置模組,係收容有載置器,該載置器係收納有藉由該複數製程模組來進行處理之基板;
    各該複數製程模組具備:
    熱處理單元,係包含有會收容並對複數片基板進行熱處理之處理容器;以及
    氣體供應單元,係配置於該熱處理單元的一側面,且會將氣體供應至該處理容器內。
  2. 如申請專利範圍第1項之處理裝置,其中該氣體供應單元係配置為遠離地板。
  3. 如申請專利範圍第1或2項之處理裝置,其中該熱處理單元係具備氣體導入埠,該氣體導入埠係配置於該氣體供應單元一側,且會將氣體導入至該處理容器內。
  4. 如申請專利範圍第1至3項中任一項之處理裝置,其中各該複數製程模組係具備排氣導管,該排氣導管係挾置著該熱處理單元而與該氣體供應單元呈對向配置,且包含有會將該處理容器內的氣體排氣之排氣配管。
  5. 如申請專利範圍第4項之處理裝置,其中該熱處理單元係具有配置於該排氣導管一側來將該處理容器內的氣體排氣之排氣埠。
  6. 如申請專利範圍第1至5項中任一項之處理裝置,其中各該複數製程模組係具備載置單元,該載置單元係配置於該熱處理單元的下方,且收容有用以在與該熱處理單元之間傳遞複數片基板之基板保持具。
  7. 如申請專利範圍第6項之處理裝置,其係具備基板搬送模組,該基板搬送模組係包含有會在該載置模組與各該複數製程模組所設置的該載置單元間傳遞基板之基板搬送機構。
  8. 如申請專利範圍第7項之處理裝置,其中該氣體供應單元在俯視觀看下,係配置為與該基板搬送模組相重疊。
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