TW202004847A - Reduced pressure drying apparatus and reduced pressure drying method - Google Patents

Reduced pressure drying apparatus and reduced pressure drying method Download PDF

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TW202004847A
TW202004847A TW108116955A TW108116955A TW202004847A TW 202004847 A TW202004847 A TW 202004847A TW 108116955 A TW108116955 A TW 108116955A TW 108116955 A TW108116955 A TW 108116955A TW 202004847 A TW202004847 A TW 202004847A
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substrate
exhaust port
reduced
storage space
pressure drying
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TWI742374B (en
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富藤幸雄
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日商斯庫林集團股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/04Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases
    • B05D3/0406Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases the gas being air
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67259Position monitoring, e.g. misposition detection or presence detection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions

Abstract

Issue of the invention is to provide a technique of reducing the occurrence of non-uniform drying while drying a processing liquid on a substrate by utilizing reduced pressure. A bottom surface 100 inside a chamber 10 is disposed with a recess portion 12, and an exhaust port 14 is disposed on a bottom surface 120 of the recess portion 12. A first rectification plate 30 is provided at a position overlapping the exhaust port 14 in a Z-axis direction (a depth direction of the recess portion 12) inside a containing space 10S. A second rectification plate 40 is disposed at a position overlapping an end portion (-X side end portion 32a or +X side end portion 32b) of the first rectification plate 30 and an inner edge portion (-X side end portion 124a or +X side end portion 124b) of the recess portion 12 in a Z-axis direction (a depth direction of the recess portion 12). A plurality of holding portions 52 holds the substrate 9 at a position (an upper position L1 or a lower position L2) above the first rectification plate 30 and the second rectification plate 40.

Description

減壓乾燥裝置及減壓乾燥方法 Vacuum drying device and vacuum drying method

本發明關於減壓乾燥裝置及減壓乾燥方法,尤其關於使塗布於基板上之處理液乾燥之技術。作為處理對象之基板,例如包含有半導體基板、液晶顯示裝置及有機EL(Electroluminescence;電致發光)顯示裝置等之FPD(Flat Panel Display;平板顯示器)用基板、光碟用基板、磁碟用基板、光磁碟用基板、光罩用基板、陶瓷基板、太陽能電池用基板、印刷電路基板等。 The present invention relates to a reduced-pressure drying device and a reduced-pressure drying method, and particularly to a technique of drying a processing liquid applied on a substrate. The substrates to be processed include, for example, semiconductor substrates, liquid crystal display devices, organic EL (Electroluminescence; electroluminescence) display devices, FPD (Flat Panel Display) substrates, optical disc substrates, magnetic disc substrates, Substrates for optical disks, substrates for photomasks, ceramic substrates, substrates for solar cells, printed circuit boards, etc.

過去以來,基板處理裝置(例如,液晶面板製造裝置等)已知有對表面被塗布有處理液之基板實施減壓乾燥處理之減壓乾燥裝置。例如,於光蝕刻(Photolithography)步驟中,存在有為了在預烘烤(Pre-baking)之前使塗布於玻璃基板等之被處理基板上之抗蝕劑液的塗布膜適度地乾燥而使用減壓乾燥裝置之情形。 In the past, as a substrate processing apparatus (for example, a liquid crystal panel manufacturing apparatus, etc.), a reduced-pressure drying apparatus that performs a reduced-pressure drying process on a substrate coated with a processing liquid on its surface has been known. For example, in the photolithography step, there is the use of reduced pressure in order to properly dry the coating film of the resist solution applied on the substrate to be processed such as a glass substrate before pre-baking The situation of the drying device.

習知之具代表性之減壓乾燥裝置,例如如專利文獻1所記載般,在配設於可開閉之腔室中之適當高度之基板支撐構件上水平地載置基板後,關閉腔室而進行減壓乾燥處理(例如,參照專利文獻1、2)。 Conventionally, a typical reduced-pressure drying apparatus, for example, as described in Patent Document 1, after horizontally placing a substrate on a substrate support member disposed at an appropriate height in an openable and closable chamber, the chamber is closed to perform Drying treatment under reduced pressure (for example, refer to Patent Documents 1 and 2).

在此種之減壓乾燥處理中,首先,通過被設置於腔室 內之排氣口而藉由外部之真空泵來進行腔室內之真空排氣。藉由該真空排氣,腔室內之壓力自當時為止之大氣壓狀態變成減壓狀態,並在該減壓狀態下,溶劑成分自基板上之抗蝕劑塗布膜蒸發。在腔室內之壓力被減壓至一定壓力之時間點,使腔室內之減壓結束,其後,從被設置於腔室內之供給口噴出或擴散放出惰性氣體(例如氮氣)或空氣,而使腔室內之壓力回到大氣壓力(使腔室復壓)。若腔室內恢復壓力,腔室便被打開,基板便會自腔室內被搬出。 In such a reduced-pressure drying process, first, the vacuum in the chamber is evacuated by an external vacuum pump through an exhaust port provided in the chamber. By this vacuum evacuation, the pressure in the chamber changes from the atmospheric pressure state at that time to the reduced pressure state, and in this reduced pressure state, the solvent component evaporates from the resist coating film on the substrate. At the time when the pressure in the chamber is reduced to a certain pressure, the decompression in the chamber is completed, and thereafter, an inert gas (such as nitrogen) or air is sprayed or diffused from a supply port provided in the chamber to cause The pressure in the chamber returns to atmospheric pressure (re-pressure the chamber). If pressure is restored in the chamber, the chamber is opened and the substrate is removed from the chamber.

於腔室內進行真空排氣之情形時,一般而言,越靠近排氣口環境氣體之流速就會越大。於流速大之情形時,存在有基板上之處理液之表面狀態會混亂的可能性,而存在有發生乾燥不均之可能性。在專利文獻1中,中板被設置於在腔室之底部所設置之排氣口的上方。藉由排氣口由中板所覆蓋,而形成經由中板與腔室之底部之間至排氣口之排氣路徑。又,於專利文獻2中,亦記載有在被設置於底部之排氣口之上方配置整流板之情形。 In the case of vacuum exhaust in the chamber, generally speaking, the closer to the exhaust port, the greater the flow rate of the ambient gas. When the flow rate is high, there is a possibility that the surface state of the processing liquid on the substrate will be disturbed, and there is a possibility that uneven drying occurs. In Patent Document 1, the middle plate is provided above the exhaust port provided at the bottom of the chamber. The exhaust port is covered by the middle plate to form an exhaust path through the middle plate and the bottom of the chamber to the exhaust port. In addition, Patent Document 2 also describes a case where a rectifying plate is arranged above an exhaust port provided at the bottom.

[先前技術文獻] [Prior Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本專利特開平9-320949號公報 [Patent Document 1] Japanese Patent Laid-Open No. 9-320949

[專利文獻2]日本專利特開2004-47582號公報 [Patent Document 2] Japanese Patent Laid-Open No. 2004-47582

在上述習知技術中,由於環境氣體自中板之周端部與腔室之側壁之間隙被吸入,因此在靠近該間隙之區域環境氣體之流速會變大。因此,藉由基板被配置於該間隙之周邊,存在有基板上 之處理液會發生乾燥不均之可能性,而有改善的空間。 In the above-mentioned conventional technology, since the ambient gas is sucked from the gap between the peripheral end of the middle plate and the side wall of the chamber, the flow rate of the ambient gas in the area close to the gap becomes larger. Therefore, by disposing the substrate on the periphery of the gap, there is a possibility that the processing liquid on the substrate may be unevenly dried, and there is room for improvement.

本發明以提供在利用減壓使基板上之處理液乾燥時,減輕處理液之乾燥不均的發生之技術為目的。 The present invention aims to provide a technique for reducing the occurrence of unevenness in the drying of the processing liquid when the processing liquid on the substrate is dried under reduced pressure.

為了解決上述課題,第1態樣係藉由減壓而使存在於具有第1主表面及第2主表面之基板之上述第1主表面上之處理液乾燥之減壓乾燥裝置;其具備有:框體,其具有可收容上述基板之收容空間,並且具有面向上述收容空間之第1面;凹部,其被設置於上述第1面;排氣口,其被設置於上述凹部之深度方向之底面;抽吸機構,其經由上述排氣口而抽吸上述收容空間之環境氣體;第1構件,其被配置於上述收容空間中在上述深度方向上與上述排氣口重疊之位置;第2構件,其被配置於上述收容空間中與上述第1構件之端部及上述凹部之內緣部沿著上述深度方向隔開間隔之位置且於上述深度方向上與上述端部及上述內緣部重疊之位置;以及基板保持部,其將上述基板保持在上述收容空間中相對於上述第1構件及上述第2構件而與上述排氣口為相反側之位置。 In order to solve the above-mentioned problems, the first aspect is a reduced-pressure drying device for drying the processing liquid present on the first main surface of the substrate having the first main surface and the second main surface by decompression; : Frame body, which has a storage space that can accommodate the substrate, and has a first surface facing the storage space; a concave portion, which is provided on the first surface; an exhaust port, which is provided in the depth direction of the concave portion Bottom surface; a suction mechanism that sucks the ambient gas of the storage space through the exhaust port; a first member that is disposed at a position in the storage space that overlaps the exhaust port in the depth direction; second A member, which is disposed at a position spaced apart from the end of the first member and the inner edge of the recess in the depth direction along the depth direction in the storage space, and in the depth direction from the end and the inner edge A position where they overlap; and a substrate holding portion that holds the substrate in the storage space at a position opposite to the exhaust port with respect to the first member and the second member.

第2態樣係於第1態樣之減壓乾燥裝置中,上述基板保持部包含有支撐上述基板之上述第2主表面之複數個銷。 The second aspect is in the reduced-pressure drying device of the first aspect, wherein the substrate holding portion includes a plurality of pins that support the second main surface of the substrate.

第3態樣係於第2態樣之減壓乾燥裝置中,上述複數個銷包含有:複數個第1銷,其等沿著第1方向被排列;及複數個第2銷,其等自上述複數個第1銷朝與上述第1方向正交之第2方向隔開間隔地沿著上述第1方向被排列;上述第2構件被配置於上述複數個第1銷與上述複數個第2銷之間。 The third aspect is in the vacuum drying apparatus of the second aspect, the plurality of pins includes: a plurality of first pins, which are arranged along the first direction; and a plurality of second pins, which are equal to The plurality of first pins are arranged along the first direction at intervals in a second direction orthogonal to the first direction; the second member is arranged on the plurality of first pins and the plurality of second pins Between pins.

第4態樣係於第1態樣至第3態樣之任一態樣之減壓 乾燥裝置中,進一步具備有:移動驅動部,其藉由使上述複數個銷沿著上述深度方向移動,而使上述基板在第1基板位置與較上述第1基板位置更靠近上述排氣口之第2基板位置之間移動。 The fourth aspect is in the reduced-pressure drying device of any one of the first aspect to the third aspect, and further includes: a moving driving section that moves the plurality of pins in the depth direction by moving the plurality of pins, The substrate is moved between the position of the first substrate and the position of the second substrate closer to the exhaust port than the position of the first substrate.

第5態樣係於第4態樣之減壓乾燥裝置中,上述移動驅動部於上述抽吸機構開始經由上述排氣口來抽吸上述收容空間之環境氣體後,使上述基板自上述第1基板位置朝上述第2基板位置移動。 The fifth aspect is in the reduced-pressure drying device of the fourth aspect, after the movement driving section starts to suck the ambient gas in the storage space through the exhaust port after the suction mechanism starts to move the substrate from the first The substrate position moves toward the second substrate position.

第6態樣係於第1態樣至第5態樣之任一態樣之減壓乾燥裝置中,上述第1構件被設置於上述第2構件與上述排氣口之間。 The sixth aspect is in the reduced-pressure drying device of any of the first aspect to the fifth aspect, and the first member is provided between the second member and the exhaust port.

第7態樣係於第6態樣之減壓乾燥裝置中,上述第1構件至少一部分位於上述凹部內。 The seventh aspect is in the reduced-pressure drying device of the sixth aspect, wherein at least a part of the first member is located in the concave portion.

第8態樣係於第7態樣之減壓乾燥裝置中,上述第1構件全部位於上述凹部內。 The eighth aspect is in the reduced-pressure drying device of the seventh aspect, in which all the first members are located in the concave portion.

第9態樣係於第8態樣之減壓乾燥裝置中,上述端部與上述內緣部位在同一平面上。 The ninth aspect is in the reduced-pressure drying device of the eighth aspect, wherein the end portion and the inner edge portion are on the same plane.

第10態樣係於第1態樣至第9態樣之任一態樣之減壓乾燥裝置中,上述基板保持部以上述第1主表面成為在鉛直方向朝上之水平姿勢來保持上述基板,上述第1構件、上述第2構件及上述排氣口位於被保持在上述基板保持部之上述基板的上述第2主表面側。 The tenth aspect is in the reduced-pressure drying device of any one of the first aspect to the ninth aspect, wherein the substrate holding portion holds the substrate with the first main surface in a horizontal posture in the vertical direction The first member, the second member, and the exhaust port are located on the second main surface side of the substrate held by the substrate holding portion.

第11態樣係藉由減壓而使存在於具有第1主表面及第2主表面之基板之上述第1主表面上的處理液乾燥之減壓乾燥方法;其具有:第1步驟,其將上述基板搬入具有收容空間及面向該 收容空間之第1面之框體的上述收容空間;以及第2步驟,其於上述第1步驟之後,經由被設置於在上述第1面所設置之凹部之深度方向之底面的排氣口,來抽吸上述收容空間之環境氣體;上述第2步驟包含有:藉由被配置於上述收容空間中在上述深度方向上與上述排氣口重疊之位置之第1構件來變更朝向上述排氣口之氣流的方向之步驟;以及藉由被配置於上述收容空間中與上述第1構件之端部及上述凹部之內緣部雙方沿著上述深度方向隔開間隔之位置且在上述深度方向上與上述端部及上述內緣部之雙方重疊之位置之第2構件來變更朝向上述排氣口之氣流的方向之步驟。 The eleventh aspect is a reduced-pressure drying method for drying the processing liquid present on the first main surface of the substrate having the first main surface and the second main surface by decompression; it has: a first step, which Carrying the substrate into the storage space having a storage space and a frame facing the first surface of the storage space; and a second step, after the first step, through a recess provided in the first surface The exhaust port on the bottom surface in the depth direction sucks the ambient gas in the storage space; the second step includes: by being disposed in the storage space at a position overlapping the exhaust port in the depth direction A step of changing the direction of the airflow toward the exhaust port by the first member; and by being disposed in the storage space and both the end of the first member and the inner edge of the recess along the depth direction The step of changing the direction of the airflow toward the exhaust port by the second member at a spaced position and a position overlapping with both the end portion and the inner edge portion in the depth direction.

根據第1態樣之減壓乾燥裝置,由於排氣口之上方由第1構件所覆蓋,因此在對收容空間之環境氣體進行排氣時,可妨礙第1構件上方之環境氣體朝向排氣口被直接吸入之情形。又,由於凹部之緣部分與第1構件之端部之間隙由第2構件所覆蓋,因此可妨礙第2構件上方之環境氣體被直接吸入該間隙之情形。藉由該等之作用,由於可使基板周圍之環境氣體的流速降低,因此可減輕處理液之乾燥不均的發生。 According to the decompression drying apparatus of the first aspect, since the upper part of the exhaust port is covered by the first member, when the ambient gas in the storage space is exhausted, the ambient gas above the first member can be prevented from being directed toward the exhaust port Inhaled directly. In addition, since the gap between the edge of the recess and the end of the first member is covered by the second member, it is possible to prevent the ambient gas above the second member from being directly sucked into the gap. By these effects, since the flow rate of the ambient gas around the substrate can be reduced, the occurrence of uneven drying of the processing liquid can be reduced.

根據第2態樣之減壓乾燥裝置,由於利用複數個銷來支撐第2主表面,可藉此減少接觸面積,因此可抑制因支撐構件之接觸所導致處理液之乾燥不均的發生。 According to the reduced-pressure drying device of the second aspect, since the second main surface is supported by a plurality of pins, the contact area can be reduced, and thus the occurrence of uneven drying of the treatment liquid due to the contact of the support members can be suppressed.

根據第3態樣之減壓乾燥裝置,可於第1銷與第2銷之間變更朝向排氣口之氣流的方向。 According to the reduced-pressure drying device of the third aspect, the direction of the airflow toward the exhaust port can be changed between the first pin and the second pin.

根據第4態樣之減壓乾燥裝置,可使基板於離排氣口較遠之第1基板位置與靠近排氣口之第2基板位置之間移動。因 此,可對應於被排氣口吸入之環境氣體之速度來調整基板的位置。 According to the reduced-pressure drying device of the fourth aspect, the substrate can be moved between the position of the first substrate far away from the exhaust port and the position of the second substrate close to the exhaust port. Therefore, the position of the substrate can be adjusted according to the velocity of the ambient gas sucked in by the exhaust port.

根據第5態樣之減壓乾燥裝置,可於收容空間內之減壓開始後,立刻將基板配置於離開氣流較快之排氣口的位置,而可在排氣口附近之流速隨著減壓之進行而降低之後,使基板靠近排氣口,藉此抑制流速的影響。此外,藉由使基板靠近排氣口附近,可促進處理液之減壓乾燥。 According to the decompression drying apparatus of the fifth aspect, the substrate can be arranged at a position away from the exhaust port where the airflow is faster after the decompression in the storage space starts, and the flow velocity near the exhaust port can be reduced After the pressure is lowered, the substrate is brought close to the exhaust port, thereby suppressing the influence of the flow velocity. In addition, by bringing the substrate close to the exhaust port, the reduced-pressure drying of the processing liquid can be promoted.

根據第6態樣之減壓乾燥裝置,第1構件被配置於較第2構件更靠近排氣口之位置。在氣流變得較大之排氣口附近,第1構件抑制環境氣體朝向排氣口直接的吸入。因此,可減低使基板之第1主表面上之處理液乾燥時氣流的影響,而可抑制處理液的乾燥不均。 According to the reduced-pressure drying device of the sixth aspect, the first member is arranged closer to the exhaust port than the second member. In the vicinity of the exhaust port where the air flow becomes larger, the first member suppresses the direct intake of ambient gas toward the exhaust port. Therefore, the influence of the air flow when drying the processing liquid on the first main surface of the substrate can be reduced, and uneven drying of the processing liquid can be suppressed.

根據第7態樣之減壓乾燥裝置,由於第1構件之至少一部分位於凹部內,因此可使第1構件露出凹部之外側的部分變小。藉此,可較大地確保收容空間內可配置基板的空間。 According to the reduced-pressure drying device of the seventh aspect, since at least a part of the first member is located in the recess, the portion where the first member is exposed outside the recess can be made smaller. Thereby, the space in which the substrate can be arranged in the storage space can be largely ensured.

根據第8態樣之減壓乾燥裝置,由於第1構件全部位於凹部內,因此可較大地確保收容空間內可配置基板的空間。 According to the reduced-pressure drying apparatus of the eighth aspect, since all the first members are located in the concave portion, a space where the substrate can be arranged in the storage space can be largely secured.

根據第9態樣之減壓乾燥裝置,由於第1構件之端部與凹部之內緣部位於同一平面上,因此於環境氣體通過第1構件之端部與凹部之內緣部之間隙時,可減輕氣流混亂之情形。 According to the reduced-pressure drying device of the ninth aspect, since the end of the first member and the inner edge of the recess are on the same plane, when ambient gas passes through the gap between the end of the first member and the inner edge of the recess, It can reduce the chaos of airflow.

根據第10態樣之減壓乾燥裝置,於將基板之存在有處理液之面配置為鉛直方向之朝上之狀態下,經由排氣口吸入收容空間之環境氣體,藉此可使基板周圍之環境氣體朝向鉛直方向之下側移動。 According to the decompression drying apparatus of the tenth aspect, in a state where the surface of the substrate where the processing liquid is present is arranged upward in the vertical direction, the ambient gas in the storage space is sucked through the exhaust port, thereby allowing the surroundings of the substrate The ambient gas moves downward in the vertical direction.

根據第11態樣之減壓乾燥方法,由於排氣口之上方 由第1構件所覆蓋,因此於對收容空間之環境氣體進行排氣時,可妨礙第1構件上方之環境氣體朝向排氣口被直接吸入之情形。又,由於凹部之緣部分與第1構件之端部之間隙由第2構件所覆蓋,因此可妨礙第2構件上方之環境氣體被直接吸入該間隙之情形。藉由該等之作用,由於可使基板周圍之環境氣體的流速降低,因此可減輕處理液之乾燥不均的發生。 According to the reduced-pressure drying method of the eleventh aspect, since the upper part of the exhaust port is covered by the first member, when the ambient gas in the storage space is exhausted, the ambient gas above the first member can be prevented from being directed toward the exhaust port Inhaled directly. In addition, since the gap between the edge of the recess and the end of the first member is covered by the second member, it is possible to prevent the ambient gas above the second member from being directly sucked into the gap. By these effects, since the flow rate of the ambient gas around the substrate can be reduced, the occurrence of uneven drying of the processing liquid can be reduced.

1、1A‧‧‧減壓乾燥裝置 1. 1A‧‧‧Decompression drying device

9‧‧‧基板 9‧‧‧ substrate

10‧‧‧腔室(框體) 10‧‧‧ chamber (frame)

10P‧‧‧開閉部 10P‧‧‧Opening and closing department

10S‧‧‧收容空間 10S‧‧‧ containment space

12‧‧‧凹部 12‧‧‧recess

12a‧‧‧-X側凹部 12a‧‧‧-X side concave part

12b‧‧‧+X側凹部 12b‧‧‧+X undercut

14‧‧‧排氣口 14‧‧‧Exhaust

20‧‧‧抽吸機構 20‧‧‧Suction mechanism

30‧‧‧第1整流板(第1構件) 30‧‧‧First rectifier plate (first member)

30a‧‧‧-X側第1整流板 30a‧‧‧-X side first rectifier board

30b‧‧‧+X側第1整流板 30b‧‧‧+X side first rectifier board

32a‧‧‧-X側端部 32a‧‧‧-X side end

32b‧‧‧+X側端部 32b‧‧‧+X side end

34a‧‧‧-X側間隙 34a‧‧‧-X side clearance

34b‧‧‧+X側間隙 34b‧‧‧+X side clearance

40、40a、40b、40c、40d‧‧‧第2整流板(第2構件) 40, 40a, 40b, 40c, 40d ‧‧‧ 2nd rectifier plate (second member)

50‧‧‧升降機構 50‧‧‧ Lifting mechanism

52、52a、52b‧‧‧支撐部(基板保持部) 52, 52a, 52b ‧‧‧ support part (substrate holding part)

54‧‧‧升降驅動部(移動驅動部) 54‧‧‧Elevating drive unit (mobile drive unit)

70‧‧‧控制部 70‧‧‧Control Department

80‧‧‧指部 80‧‧‧ Finger

90‧‧‧上表面 90‧‧‧upper surface

100‧‧‧底面(第1面) 100‧‧‧Bottom (1st side)

102‧‧‧外表面 102‧‧‧Outer surface

104‧‧‧壁面 104‧‧‧ Wall

120‧‧‧底面 120‧‧‧Bottom

122‧‧‧內壁面 122‧‧‧Inner wall

124a‧‧‧-X側緣部(內緣部) 124a‧‧‧-X side edge (inner edge)

124b‧‧‧+X側緣部(內緣部) 124b‧‧‧+X side edge (inner edge)

520‧‧‧升降板 520‧‧‧Lifting board

522‧‧‧銷 522‧‧‧pin

L1‧‧‧上位置(第1基板位置) L1‧‧‧Up position (1st board position)

L2‧‧‧下位置(第2基板位置) L2‧‧‧lower position (second board position)

圖1係顯示自鉛直方向之上側觀察實施形態之減壓乾燥裝置1之腔室10內部之情況的概略俯視圖。 FIG. 1 is a schematic plan view showing the interior of the chamber 10 of the vacuum drying apparatus 1 of the embodiment as viewed from above in the vertical direction.

圖2係顯示自鉛直方向之上側觀察實施形態之減壓乾燥裝置1之不含4個第2整流板40及升降機構50之腔室10內部之情況的概略俯視圖。 FIG. 2 is a schematic plan view showing the inside of the chamber 10 of the reduced-pressure drying device 1 of the embodiment that does not include four second rectifying plates 40 and the elevating mechanism 50 from above in the vertical direction.

圖3係沿著圖1之A-A線之位置之減壓乾燥裝置1的概略剖視圖。 FIG. 3 is a schematic cross-sectional view of the reduced-pressure drying device 1 taken along the line A-A of FIG. 1.

圖4係顯示處理對象之基板9被搬入時之減壓乾燥裝置1的概略剖視圖。 FIG. 4 is a schematic cross-sectional view showing the reduced-pressure drying device 1 when the substrate 9 to be processed is carried in.

圖5係顯示開始進行排氣時之減壓乾燥裝置1的概略剖視圖。 FIG. 5 is a schematic cross-sectional view of the reduced-pressure drying device 1 when exhausting is started.

圖6係顯示開始進行排氣後經過既定時間時之減壓乾燥裝置1的概略剖視圖。 FIG. 6 is a schematic cross-sectional view of the reduced-pressure drying device 1 when a predetermined time has passed after the start of exhaust.

圖7係顯示使處理後之基板9朝外部搬出時之減壓乾燥裝置1的概略剖視圖。 7 is a schematic cross-sectional view of the reduced-pressure drying apparatus 1 when the processed substrate 9 is carried out to the outside.

圖8係顯示變形例之減壓乾燥裝置1A的圖。 FIG. 8 is a diagram showing a reduced-pressure drying device 1A according to a modification.

以下,一邊參照隨附的圖式,一邊對本發明之實施形態進行說明。再者,本實施形態所記載之構成元件僅為例示,並非用以將本發明之範圍僅限定於該等構成元件者。於圖式中,為了容易理解,存在有視需要而誇張地或簡略地圖示各部分之尺寸或數量之情形。 Hereinafter, an embodiment of the present invention will be described with reference to the accompanying drawings. In addition, the constituent elements described in this embodiment are merely examples, and are not intended to limit the scope of the present invention to such constituent elements. In the drawings, for easy understanding, there are cases where the size or number of each part is illustrated exaggeratedly or simply as needed.

除非有特別說明,否則表示相對性或絕對性之位置關係的表現(例如「朝一方向」、「沿著一方向」、「平行」、「正交」、「中心」、「同心」、「同軸」等),不僅為嚴格地表示該位置關係者,且亦為在公差或可得到相同程度之功能之範圍內相對地表示角度或距離有位移之狀態者。除非有特別說明,否則表示相等狀態之表現(例如「同一」、「相等」、「均質」等),不僅為表示定量上嚴格地相等之狀態者,且亦為表示存在有公差或可得到相同程度之功能的差之狀態者。除非有特別說明,否則表示形狀之表現(例如「四角形」或「圓筒形」等),不僅為嚴格地表示幾何學上之該等形狀者,且在可得到相同程度之功效的範圍內,亦為表示例如具有凹凸或倒角等之形狀者。「裝設」、「具有」、「具備」、「包含」或「有」1個構成元件之表現,並非為將其他構成元件之存在排除在外之排他性表現。除非有特別說明,否則所謂「~之上」,除了2個元件相接之情形,亦包含2個元件分開之情形。 Unless otherwise specified, the expression of relative or absolute positional relationship (such as "in one direction", "along one direction", "parallel", "orthogonal", "center", "concentric", "coaxial" ", etc.) not only strictly indicate the positional relationship, but also indicate the relative displacement of the angle or distance within the range of tolerances or functions of the same degree. Unless otherwise specified, the expression of equal states (such as "same", "equal", "homogeneous", etc.) is not only a quantitatively strictly equal state, but also means that there is tolerance or the same The state of poor function of the degree. Unless otherwise specified, the expression of the shape (such as "quadrilateral" or "cylindrical", etc.) is not only a strict representation of these geometric shapes, but also to the extent that the same degree of efficacy can be obtained, It also means a shape having irregularities or chamfers, for example. The expression "installation", "have", "have", "include" or "have" one constituent element is not an exclusive expression that excludes the existence of other constituent elements. Unless otherwise specified, the so-called "~above", in addition to the case where two components are connected, also includes the case where two components are separated.

<1.實施形態> <1. Embodiment form>

圖1係顯示自鉛直方向之上側觀察實施形態之減壓乾燥裝置1之腔室10內部之情況的概略俯視圖。圖2係顯示自鉛直方向之上側觀察實施形態之減壓乾燥裝置1之不含4個第2整流板40及升 降機構50之腔室10內部之情況的概略俯視圖。圖3係沿著圖1之A-A線之位置之減壓乾燥裝置1的概略剖視圖。 FIG. 1 is a schematic plan view showing the interior of the chamber 10 of the vacuum drying apparatus 1 of the embodiment as viewed from above in the vertical direction. Fig. 2 is a schematic plan view showing the inside of the chamber 10 of the decompression drying apparatus 1 of the embodiment without four second rectifying plates 40 and the lifting mechanism 50 viewed from above in the vertical direction. FIG. 3 is a schematic cross-sectional view of the reduced-pressure drying device 1 taken along the line A-A of FIG. 1.

於各圖中,為了明確化減壓乾燥裝置1之各部分之位置關係,而標示X軸、Y軸及Z軸。在本例子中,X軸方向及Y軸方向為水平方向,而Z軸方向為鉛直方向。於各軸中,將箭頭之前端所朝向之方向設為+(正)方向,並將其相反方向設為-(負)方向。將鉛直方向之朝上設為「+Z方向」,並將朝下設為「-Z方向」。下述所說明之各部分之位置關係僅為一例,並非用以限定於該等位置關係者。 In each figure, in order to clarify the positional relationship of each part of the reduced-pressure drying device 1, X-axis, Y-axis, and Z-axis are indicated. In this example, the X-axis direction and the Y-axis direction are horizontal directions, and the Z-axis direction is a vertical direction. In each axis, the direction that the front end of the arrow faces is the + (positive) direction, and the opposite direction is the-(negative) direction. Set the upward direction of the vertical direction to "+Z direction" and the downward direction to "-Z direction". The positional relationship of each part described below is only an example and is not intended to be limited to such positional relationship.

減壓乾燥裝置1具備有腔室10。腔室10呈長方體狀,且為內部具有收容空間10S之框體。減壓乾燥裝置1於該收容空間10S收容基板9,進行藉由減壓使被塗布於基板9之上表面90(第1主表面)之處理液乾燥之減壓乾燥處理。 The reduced-pressure drying device 1 includes a chamber 10. The chamber 10 has a rectangular parallelepiped shape, and is a frame body having an accommodating space 10S therein. The reduced-pressure drying device 1 accommodates the substrate 9 in the storage space 10S, and performs a reduced-pressure drying process for drying the processing liquid applied on the upper surface 90 (first main surface) of the substrate 9 by decompression.

於腔室10之+Y側之側壁之靠近+Z側之部分設置有開閉部10P。開閉部10P形成在腔室10之外部與腔室10之收容空間10S之間用以通過基板9之開口。又,開閉部10P藉由關閉該開口將外部與收容空間10S遮斷,而使基板9無法通過。 An opening and closing portion 10P is provided in a portion of the side wall of the chamber 10 on the +Y side near the +Z side. The opening and closing portion 10P is formed between the outside of the chamber 10 and the receiving space 10S of the chamber 10 to pass through the opening of the substrate 9. In addition, the opening and closing portion 10P closes the opening to block the outside from the storage space 10S, so that the substrate 9 cannot pass through.

腔室10具有面向收容空間10S之底面100。底面100成為水平面。於底面100設置有4個凹部12。4個凹部12包含被配置於-X側之2個-X側凹部12a、及被配置於+X側之2個+X側凹部12b。 The chamber 10 has a bottom surface 100 facing the storage space 10S. The bottom surface 100 becomes a horizontal plane. Four concave portions 12 are provided on the bottom surface 100. The four concave portions 12 include two -X side concave portions 12a arranged on the -X side, and two +X side concave portions 12b arranged on the +X side.

凹部12之數量並不限定於4個,亦可任意地變更。例如,亦可僅設置1個凹部12。 The number of recesses 12 is not limited to four, and can be arbitrarily changed. For example, only one recess 12 may be provided.

以下,專注於1個凹部12來進行說明。凹部12具有 自底面100朝-Z方向凹陷之形狀。凹部12自鉛直方向之上側觀察雖呈矩形,但並非為必要。凹部12之深度方向(Z軸方向)之底面120成為水平面。凹部12具有自底面120之外周部朝鉛直方向之向上立起之內壁面122。內壁面122具有以相對於底面120垂直之方式沿著鉛直方向延伸之部分。藉由內壁面122沿著鉛直方向延伸,可將朝向排氣口14之環境氣體之流動整流成鉛直方向。 In the following, the description will focus on one recess 12. The recess 12 has a shape recessed from the bottom surface 100 in the -Z direction. The recess 12 is rectangular when viewed from above in the vertical direction, but it is not necessary. The bottom surface 120 of the recess 12 in the depth direction (Z-axis direction) becomes a horizontal plane. The concave portion 12 has an inner wall surface 122 that rises upward in the vertical direction from the outer peripheral portion of the bottom surface 120. The inner wall surface 122 has a portion extending in the vertical direction so as to be perpendicular to the bottom surface 120. By the inner wall surface 122 extending in the vertical direction, the flow of the ambient gas toward the exhaust port 14 can be rectified into the vertical direction.

於凹部12之底面120設置有排氣口14。亦即,減壓乾燥裝置1具有4個排氣口14。排氣口14經由凹部12而連接於收容空間10S。排氣口14被連接於抽吸機構20。抽吸機構20具有對應於來自控制部70之控制指令而動作之未圖示的真空泵。抽吸機構20依據控制指令,經由排氣口14而抽吸收容空間10S內之環境氣體,並將其朝外部排出。 An exhaust port 14 is provided on the bottom surface 120 of the recess 12. That is, the reduced-pressure drying device 1 has four exhaust ports 14. The exhaust port 14 is connected to the storage space 10S via the recess 12. The exhaust port 14 is connected to the suction mechanism 20. The suction mechanism 20 has a vacuum pump (not shown) that operates in response to a control command from the control unit 70. The suction mechanism 20 sucks the ambient gas in the storage space 10S through the exhaust port 14 according to the control command and discharges it to the outside.

減壓乾燥裝置1具備有4個第1整流板30(第1構件)。在本例子中,分別於4個凹部12之內側各配置1個第1整流板30。4個第1整流板30包含有分別於2個-X側凹部12a之內側各配置有1個之2個-X側第1整流板30a、及分別於2個+X側凹部12b之內側各配置有1個之2個+X側第1整流板30b。 The reduced-pressure drying device 1 includes four first flow straightening plates 30 (first members). In this example, one first rectifying plate 30 is arranged inside each of the four recesses 12. The four first rectifying plates 30 include two each arranged inside one of the two -X side recesses 12a. One -X-side first rectifying plate 30a and one each of two +X-side first rectifying plates 30b are arranged inside the two +X-side concave portions 12b, respectively.

各第1整流板30被配置於收容空間10S內與排氣口14在Z軸方向上重疊之位置。亦即,對於各第1整流板30,在自鉛直方向之上側朝鉛直方向之向下(-Z方向)俯視透視第1整流板30及排氣口14之情形時,第1整流板30被配置於收容空間10S中與排氣口14重疊之位置。第1整流板30被配置在相對於排氣口14沿著Z軸方向隔開間隔之位置。第1整流板30為板狀之構件,其小於各凹部12朝深度方向觀察時之開口,且大於各排氣口14之開 口。第1整流板30以平行於水平面之姿勢被配置。亦即,於自鉛直方向之上側朝鉛直方向之向下(-Z方向)俯視透視第1整流板30、凹部12及排氣口14之情形時,第1整流板30小於凹部12之開口,且大於排氣口14之開口。再者,凹部12之開口係凹部12內之空間連接於收容空間10S中位於凹部12之上方之空間的部分,且排氣口14之開口係排氣口14內之空間連接於凹部12內之空間的部分。 Each first rectifying plate 30 is arranged at a position overlapping the exhaust port 14 in the Z-axis direction in the storage space 10S. That is, for each first rectifying plate 30, when the first rectifying plate 30 and the exhaust port 14 are seen through from above in the vertical direction toward the vertical direction downward (-Z direction), the first rectifying plate 30 is It is arranged at a position overlapping the exhaust port 14 in the storage space 10S. The first rectifying plate 30 is arranged at a distance from the exhaust port 14 in the Z-axis direction. The first rectifying plate 30 is a plate-shaped member, which is smaller than the opening of each concave portion 12 when viewed in the depth direction, and larger than the opening of each exhaust port 14. The first rectifying plate 30 is arranged in a posture parallel to the horizontal plane. That is, when the first rectifier plate 30, the recessed portion 12, and the exhaust port 14 are seen through from above in the vertical direction to the vertical direction (-Z direction), the first rectifier plate 30 is smaller than the opening of the recessed portion 12, And it is larger than the opening of the exhaust port 14. Furthermore, the opening of the recess 12 is a part of the space in the recess 12 connected to the space above the recess 12 in the accommodation space 10S, and the opening of the exhaust port 14 is the space in the exhaust port 14 connected to the recess 12 Part of the space.

各第1整流板30其整體被配置於對應之凹部12內。在本例子中,各第1整流板30之上表面與包含所對應之凹部12之端部之外表面102位在相同高度。各第1整流板30之上表面與外表面102成為齊平,而該外表面102包含有對應之凹部12之作為內緣部之底面100中圍繞各凹部12之周圍之內緣部。亦即,第1整流板30之上表面與外表面102位在同一平面上,而該外表面102包含有作為對應於該第1整流板30之凹部12之內緣部之底面100中圍繞各凹部12之周圍之內緣部。如此,藉由將第1整流板30設置於凹部12內,可使收容空間10S中可配置基板9之空間變大。又,可使收容空間10S之Z軸方向之長度尺寸變小。 The entirety of each first rectifying plate 30 is arranged in the corresponding concave portion 12. In this example, the upper surface of each first fairing plate 30 is at the same height as the outer surface 102 of the end including the corresponding recess 12. The upper surface of each first rectifying plate 30 is flush with the outer surface 102, and the outer surface 102 includes an inner edge portion of the bottom surface 100 serving as an inner edge portion of the corresponding concave portion 12 surrounding each concave portion 12. That is, the upper surface of the first rectifying plate 30 and the outer surface 102 are located on the same plane, and the outer surface 102 includes the bottom surface 100 as the inner edge portion of the recess 12 corresponding to the first rectifying plate 30 surrounding each The inner edge portion around the concave portion 12. In this way, by providing the first rectifying plate 30 in the concave portion 12, the space in which the substrate 9 can be placed in the storage space 10S can be increased. In addition, the length dimension in the Z-axis direction of the storage space 10S can be reduced.

再者,第1整流板30之一部分亦可在凹部12內且較外表面102更底面120側(-Z側)。亦即,第1整流板30之一部分亦可在凹部12外且較外表面102更上側(+Z側)。如此,即便為一部分,但藉由將第1整流板30放入凹部12內,可使腔室10之Z軸方向之長度變小。 Furthermore, a part of the first rectifying plate 30 may be in the concave portion 12 and on the bottom surface 120 side (-Z side) from the outer surface 102. That is, a part of the first rectifying plate 30 may be outside the concave portion 12 and above the outer surface 102 (+Z side). In this way, even if it is a part, by putting the first rectifying plate 30 into the concave portion 12, the length of the chamber 10 in the Z-axis direction can be reduced.

第1整流板30在與凹部12之矩形之內緣部之間設置有間隙。詳細而言,於第1整流板30之-X側端部32a與凹部12 之-X側緣部124a之間設置有-X側間隙34a,而於第1整流板30之+X側端部32b與凹部12之+X側緣部124b之間設置有+X側間隙34b。-X側端部32a係位於第1整流板30之-X側之端部,-X側緣部124a係位於凹部12之-X側之緣部,+X側端部32b係位於第1整流板30之+X側之端部,而+X側緣部124b係位於凹部12之+X側之緣部。 The first rectifying plate 30 has a gap with the rectangular inner edge of the recess 12. In detail, a -X side gap 34a is provided between the -X side end portion 32a of the first rectifier plate 30 and the -X side edge portion 124a of the concave portion 12, and the +X side end portion of the first rectifier plate 30 A +X side gap 34b is provided between 32b and the +X side edge portion 124b of the concave portion 12. The -X side end 32a is located at the -X side end of the first rectifying plate 30, the -X side edge 124a is located at the -X side edge of the recess 12, and the +X side end 32b is located at the first rectification The end of the plate 30 on the +X side, and the +X side edge 124b is located on the edge of the recess 12 on the +X side.

減壓乾燥裝置1具備有4個第2整流板40(第2構件)。4個第2整流板40自-X側朝向+X側,依序包含有第2整流板40a、40b、40c、40d。亦即,自-X側朝向+X側,第2整流板40a、第2整流板40b、第2整流板40c、第2整流板40d依此記載之順序所排列。該等4個第2整流板40a、40b、40c、40d分別為長方形之板狀。4個第2整流板40a、40b、40c、40d,Y軸方向之長度尺寸相同。又,2個第2整流板40a、40d,X軸方向之寬度尺寸相同,而2個第2整流板40b、40c,X軸方向之寬度尺寸相同。2個第2整流板40a、40d沿著X軸方向隔開間隔地被配置,且於該等之間配置有2個第2整流板40b、40c。2個第2整流板40b、40c亦沿著X軸方向相互隔開間隔地被配置。2個第2整流板40a、40b亦沿著X軸方向相互隔開間隔地被配置。2個第2整流板40c、40d亦沿著X軸方向相互隔開間隔地被配置。 The reduced-pressure drying device 1 is provided with four second rectifying plates 40 (second members). The four second rectifying plates 40 include the second rectifying plates 40a, 40b, 40c, and 40d in order from the -X side to the +X side. That is, from the -X side toward the +X side, the second rectifying plate 40a, the second rectifying plate 40b, the second rectifying plate 40c, and the second rectifying plate 40d are arranged in the order described here. The four second rectifying plates 40a, 40b, 40c, and 40d are rectangular plates, respectively. The four second rectifying plates 40a, 40b, 40c, and 40d have the same length dimension in the Y-axis direction. In addition, the two second rectifying plates 40a and 40d have the same width dimension in the X-axis direction, and the two second rectifying plates 40b and 40c have the same width dimension in the X-axis direction. The two second rectifying plates 40a and 40d are arranged at intervals along the X-axis direction, and two second rectifying plates 40b and 40c are arranged between the two. The two second rectifying plates 40b and 40c are also arranged at a distance from each other along the X-axis direction. The two second rectifying plates 40a and 40b are also arranged at intervals in the X-axis direction. The two second rectifying plates 40c and 40d are also arranged at a distance from each other along the X-axis direction.

第2整流板40a、40b、40c、40d之各者相對於第1整流板30之外周端部與外表面102之雙方,沿著Z軸方向隔開間隔且被設置於Z軸方向上重疊之位置。亦即,於自鉛直方向之上側朝鉛直方向之向下(-Z方向)俯視透視第2整流板40a、40b、40c、40d、第1整流板30及外表面102之情形時,第2整流板40a、40b、 40c、40d分別被配置在收容空間10S中與第1整流板30之外周端部及凹部12之內緣部之雙方重疊之位置。 Each of the second fairing plates 40a, 40b, 40c, and 40d is spaced apart from each other along the Z-axis direction with respect to both the outer peripheral end portion of the first fairing plate 30 and the outer surface 102, and is provided in the Z-axis direction overlapping position. That is, when the second rectifier plates 40a, 40b, 40c, 40d, the first rectifier plate 30, and the outer surface 102 are seen through from the upper side in the vertical direction toward the vertical direction (-Z direction), the second rectifier The plates 40a, 40b, 40c, and 40d are arranged at positions that overlap with both the outer peripheral end of the first fairing plate 30 and the inner edge of the recess 12 in the storage space 10S.

例如,位於最-X側之第2整流板40a,於Z軸方向上與包含有2個-X側第1整流板30a之-X側端部32a、及與該等對向之2個-X側凹部12a之-X側緣部124a(內緣部)之外表面102的部分重疊。亦即,於自鉛直方向之上側朝鉛直方向之向下(-Z方向)俯視透視第2整流板40a、第1整流板30及外表面102之情形時,第2整流板40a被配置於收容空間10S中分別與2個-X側第1整流板30a之-X側端部32a、及與該等之-X側端部32a對向之2個-X側凹部12a之-X側緣部124a的雙方重疊之位置。亦即,第2整流板40a覆蓋2個-X側凹部12a之-X側間隙34a的上方。 For example, the second rectifier plate 40a located on the most -X side includes two -X-side end portions 32a on the Z-axis direction including two -X-side first rectifier plates 30a, and two opposite- The portion of the outer surface 102 of the X-side concave portion 12a-the X-side edge portion 124a (inner edge portion) overlaps. That is, when the second rectifier plate 40a, the first rectifier plate 30, and the outer surface 102 are seen through from above in the vertical direction toward the vertical direction (-Z direction), the second rectifier plate 40a is disposed in the housing In the space 10S, two -X side end portions 32a facing the two -X side first rectifying plates 30a, and two -X side recesses 12a facing the -X side edge portions facing the -X side end portions 32a, respectively The position where the two sides of 124a overlap. That is, the second rectifying plate 40a covers the upper portion of the -X side gap 34a of the two -X side concave portions 12a.

第2整流板40b於Z軸方向上,與包含有2個-X側第1整流板30a之+X側端部32b及與該等對向之2個-X側凹部12a之+X側緣部124b(內緣部)的外表面102之部分重疊。亦即,於自鉛直方向之上側朝鉛直方向之向下(-Z方向)俯視透視第2整流板40b、第1整流板30及外表面102之情形時,第2整流板40b被配置於收容空間10S中分別與2個-X側第1整流板30a之+X側端部32b及與該等之+X側端部32b對向之2個-X側凹部12a之+X側緣部124b的雙方重疊之位置。亦即,第2整流板40b覆蓋2個-X側凹部12a之+X側間隙34b的上方。 In the Z-axis direction, the second rectifying plate 40b includes the +X side end 32b of the two -X side first rectifying plates 30a and the +X side edges of the two -X side concave portions 12a facing these The portion of the outer surface 102 of the portion 124b (inner edge portion) overlaps. That is, when the second rectifier plate 40b, the first rectifier plate 30, and the outer surface 102 are seen through from above in the vertical direction to the vertical direction (-Z direction), the second rectifier plate 40b is disposed in the housing In the space 10S, the +X side end portions 32b of the two -X side first rectifier plates 30a and the +X side edge portions 124b of the two -X side concave portions 12a facing the +X side end portions 32b are respectively opposed Where the two sides overlap. That is, the second rectifying plate 40b covers the +X side gap 34b of the two -X side concave portions 12a.

第2整流板40c於Z軸方向上,與包含有2個+X側第1整流板30b之-X側端部32a及與該等對向之2個+X側凹部12b之-X側緣部124a(內緣部)的外表面102之部分重疊。亦即,於自鉛直方向之上側朝鉛直方向之向下(-Z方向)俯視透視第2整流板 40c、第1整流板30及外表面102之情形時,第2整流板40c被配置於收容空間10S中分別與2個+X側第1整流板30b之-X側端部32a、及與該等之-X側端部32a對向之2個+X側凹部12b之2個-X側緣部124a的雙方重疊之位置。亦即,第2整流板40c覆蓋2個+X側凹部12b之-X側間隙34a的上方。 In the Z-axis direction, the second rectifying plate 40c includes a -X side end portion 32a including two +X side first rectifying plates 30b and two -X side concave portions 12b facing the -X side edges The portion of the outer surface 102 of the portion 124a (inner edge portion) overlaps. That is, when the second rectifier plate 40c, the first rectifier plate 30, and the outer surface 102 are seen through from above in the vertical direction toward the vertical direction (-Z direction), the second rectifier plate 40c is disposed in the housing In the space 10S, two -X side end portions 32a of the two +X side first rectifier plates 30b and two +X side recesses 12b facing the -X side of the +X side end portions 32a are respectively opposed The position where both sides of the edge 124a overlap. That is, the second rectifying plate 40c covers the upper side of the -X side gap 34a of the two +X side recesses 12b.

位於最+X側之第2整流板40d,於Z軸方向上與包含有2個+X側第1整流板30b之+X側端部32b及與該等對向之2個+X側凹部12b之+X側緣部124b(內緣部)的外表面102之部分重疊。亦即,於自鉛直方向之上側朝鉛直方向之向下(-Z方向)俯視透視第2整流板40d、第1整流板30及外表面102之情形時,第2整流板40d被配置於收容空間10S中分別與2個+X側第1整流板30b之+X側端部32b、及與該等之+X側端部32b對向之2個+X側凹部12b之+X側緣部124b的雙方重疊之位置。亦即,第2整流板40d覆蓋2個+X側凹部12b之+X側間隙34b的上方。 The second rectifier plate 40d located on the most +X side includes a +X side end portion 32b including two +X side first rectifier plates 30b in the Z-axis direction and two +X side concave portions facing these The portion of the outer surface 102 of the +X side edge portion 124b (inner edge portion) of 12b overlaps. That is, when the second rectifier plate 40d, the first rectifier plate 30, and the outer surface 102 are seen through from the upper side in the vertical direction to the vertical direction downward (-Z direction), the second rectifier plate 40d is disposed in the housing In the space 10S, the +X side end portions 32b of the two +X side first rectifying plates 30b and the +X side edge portions of the two +X side concave portions 12b facing the +X side end portions 32b are respectively opposed The position where the two sides of 124b overlap. That is, the second rectifying plate 40d covers the +X side gap 34b of the two +X side recesses 12b.

升降機構50在複數個第2整流板40之上方支撐基板9,並且使基板9沿著鉛直方向升降移動。升降機構50包含有6個支撐部52、及升降驅動部54。 The lifting mechanism 50 supports the substrate 9 above the plurality of second rectifying plates 40 and moves the substrate 9 up and down in the vertical direction. The lifting mechanism 50 includes six support parts 52 and a lifting drive part 54.

6個支撐部52相對於第1整流板30被配置在與排氣口14相反側。亦即,6個支撐部52與排氣口14被配置於隔著第1整流板30相互地為相反側之位置。6個支撐部52包含有3個支撐部52a及3個支撐部52b。支撐部52a、52b分別具備有沿著Y軸方向延伸之升降板520、及於1個升降板520上沿著Y軸方向隔開間隔地被配置之複數個銷522。在本例子中,於收容空間10S中靠-X側之位置、X軸方向中央之位置、靠+X側之位置,分別配置有 支撐部52a、52b各1個。自鉛直方向之上側觀察,於第2整流板40a與第2整流板40b之間、第2整流板40b與第2整流板40c之間、及第2整流板40c與第2整流板40d之間分別配置有支撐部52a、52b各1個。基板9藉由被支撐於支撐部52a或支撐部52b所具備之複數個銷522之上端部,而相對於第1整流板30及第2整流板40被保持在與排氣口14相反側之位置。亦即,基板9以第1整流板30及第2整流板40為基準,而被保持在與排氣口14相反側之位置。 The six support portions 52 are arranged on the side opposite to the exhaust port 14 with respect to the first fairing plate 30. That is, the six support portions 52 and the exhaust port 14 are arranged at positions opposite to each other across the first rectifying plate 30. The six support portions 52 include three support portions 52a and three support portions 52b. The support parts 52a and 52b respectively include a lift plate 520 extending in the Y-axis direction, and a plurality of pins 522 arranged at intervals on the one lift plate 520 in the Y-axis direction. In this example, one support portion 52a and 52b are arranged in the storage space 10S at the position on the -X side, the center in the X-axis direction, and the position on the +X side, respectively. Viewed from above in the vertical direction, between the second rectifier plate 40a and the second rectifier plate 40b, between the second rectifier plate 40b and the second rectifier plate 40c, and between the second rectifier plate 40c and the second rectifier plate 40d One support part 52a, 52b each is arrange|positioned. The substrate 9 is held on the opposite side of the exhaust port 14 with respect to the first fairing plate 30 and the second fairing plate 40 by being supported on the upper end portions of the plural pins 522 provided in the support section 52a or the support section 52b position. That is, the substrate 9 is held at a position opposite to the exhaust port 14 based on the first rectifying plate 30 and the second rectifying plate 40.

升降驅動部54被連接於3個支撐部52a及3個支撐部52b之各者的升降板520,而使該等個別地沿著鉛直方向升降。作為移動驅動部之升降驅動部54之驅動力,亦可經由貫通腔室10之底面100而被連結於升降板520之下表面之棒狀構件(未圖示)被傳遞。藉由升降驅動部54之驅動力,支撐部52a及支撐部52b分別沿著鉛直方向升降。再者,6個支撐部52中2個以上之支撐部52,亦可以一體進行升降之方式被直接連結。例如,亦可將3個支撐部52a相互地連結而使其一體升降。又,亦可使3個支撐部52b相互地連結而一體地升降。於如此之情形時,由於可減少升降驅動部54之動作軸(棒狀構件),因此可簡化升降驅動部54之構成。 The elevating drive portion 54 is connected to the elevating plate 520 of each of the three support portions 52a and the three support portions 52b, and individually raises and lowers these in the vertical direction. The driving force of the elevating driving unit 54 as the moving driving unit may also be transmitted through a rod-shaped member (not shown) that is connected to the lower surface of the elevating plate 520 through the bottom surface 100 of the chamber 10. By the driving force of the elevating driving portion 54, the supporting portion 52a and the supporting portion 52b respectively move up and down in the vertical direction. In addition, two or more support parts 52 of the six support parts 52 may be directly connected in such a manner that they can be raised and lowered integrally. For example, the three support portions 52a may be connected to each other to integrally raise and lower. In addition, the three support portions 52b may be connected to each other to integrally move up and down. In such a case, since the operating shaft (rod-shaped member) of the lift drive unit 54 can be reduced, the structure of the lift drive unit 54 can be simplified.

支撐部52a所具備之複數個銷522,以與支撐部52b所具備之複數個銷522在Y軸方向之位置上不同之方式被配置。其原因係為了與各種大小之基板9對應。再者,各銷522之位置並不限定於此,亦可任意地設定。 The plurality of pins 522 included in the support portion 52a are arranged differently from the positions of the plurality of pins 522 included in the support portion 52b in the Y-axis direction. The reason is to correspond to substrates 9 of various sizes. In addition, the position of each pin 522 is not limited to this, and can be set arbitrarily.

例如,靠-X側之支撐部52a所具備之複數個銷522,係沿著Y軸方向被排列之複數個第1銷之一例。X軸方向中央之支 撐部52a所具備之複數個銷522,係相對於靠-X側之支撐部52a所具備之複數個銷522沿著X軸方向隔開間隔地沿著Y軸方向被排列之複數個第2銷之一例。第2整流板40b係被配置於該等複數個第1銷與複數個第2銷之間之第2構件之一例。 For example, the plurality of pins 522 included in the support portion 52a on the -X side is an example of the plurality of first pins arranged in the Y-axis direction. The plurality of pins 522 included in the support portion 52a at the center in the X-axis direction are arranged along the Y-axis direction at intervals with respect to the plurality of pins 522 included in the support portion 52a on the -X side along the X-axis direction An example of multiple second pins. The second rectifying plate 40b is an example of a second member disposed between the plurality of first pins and the plurality of second pins.

又,X軸方向中央之支撐部52a所具備之複數個銷522係複數個第1銷之一例,且為靠+X側之支撐部52a所具備之複數個銷522係複數個第2銷之一例。第2整流板40c係被配置於該等複數個第1銷與複數個第2銷之間的第2構件之一例。 In addition, the plural pins 522 included in the support portion 52a in the center in the X-axis direction are examples of plural first pins, and the plural pins 522 included in the support portion 52a on the +X side are plural second pins. One case. The second rectifying plate 40c is an example of a second member disposed between the plurality of first pins and the plurality of second pins.

減壓乾燥裝置1具備有控制部70。控制部70亦可被構成為具備有進行各種運算處理之CPU(Central Processing Unit;中央處理單元)、作為儲存基本程式之讀取專用之記憶體的ROM(Read-Only Memory;唯讀記憶體)、作為儲存各種資訊之讀寫自如之記憶體的RAM(Random Access Memory;隨機存取記憶體)之一般電腦。控制部70亦可具備有儲存控制用應用軟體(程式)或各種資料等之輔助儲存裝置。藉由CPU隨著控制用應用軟體而動作,可實現各種功能。控制部70可進行通信地被連接於開閉部10P、抽吸機構20及升降驅動部54,並對該等發送控制指令,藉此控制該等之動作。 The reduced-pressure drying device 1 includes a control unit 70. The control unit 70 may also be configured to include a CPU (Central Processing Unit) that performs various arithmetic processes, and a ROM (Read-Only Memory) that is a memory dedicated to reading basic programs. 2. General computer as RAM (Random Access Memory), which is a free memory for storing and reading various information. The control unit 70 may be provided with an auxiliary storage device that stores application software (programs) for control and various data. By the CPU operating with the application software for control, various functions can be realized. The control unit 70 is communicably connected to the opening/closing unit 10P, the suction mechanism 20, and the elevating drive unit 54 and sends control commands to these to control the operations thereof.

<動作說明> <Action description>

對上述構成之減壓乾燥裝置1之減壓乾燥處理的動作進行說明。再者,除非有特別說明,否則減壓乾燥裝置1之動作係對應於來自控制部70之控制指令而執行者。 The operation of the vacuum drying process of the vacuum drying apparatus 1 configured as described above will be described. In addition, unless otherwise specified, the operation of the reduced-pressure drying device 1 is executed in response to a control command from the control unit 70.

圖4係顯示處理對象之基板9被搬入時之減壓乾燥裝 置1的概略側視圖。減壓乾燥處理包含有將處理對象之基板9(於上表面90塗布有處理液之基板9)自外部搬入腔室10之收容空間10S之搬入步驟S1。 Fig. 4 is a schematic side view showing the vacuum drying apparatus 1 when the substrate 9 to be processed is carried in. The reduced-pressure drying process includes a carrying-in step S1 of carrying the substrate 9 (the substrate 9 coated with the processing liquid on the upper surface 90) from the outside into the storage space 10S of the chamber 10.

在搬入步驟S1中,控制部70將與處理對象之基板9的支撐對應之複數個支撐部52(在圖4所示之例子中為3個支撐部52a),配置於既定之鉛直位置。既定之鉛直位置係鉛直方向上之既定位置。其後,控制部70將開閉部10P開啟。通過被開放之開閉部10P,未圖示之搬送裝置將基板9搬入收容空間10S。然後,未圖示之搬送裝置將基板9載置於該複數個支撐部52之各銷522上。藉此,成為基板9被保持在上位置L1(第1基板位置)之狀態。 In the carrying-in step S1, the control unit 70 arranges a plurality of support portions 52 (three support portions 52a in the example shown in FIG. 4) corresponding to the support of the substrate 9 to be processed at a predetermined vertical position. The predetermined vertical position is the predetermined position in the vertical direction. Thereafter, the control unit 70 turns on the opening and closing unit 10P. Through the opened and closed portion 10P, a transport device (not shown) transports the substrate 9 into the storage space 10S. Then, a transport device (not shown) places the substrate 9 on each pin 522 of the plurality of support portions 52. As a result, the substrate 9 is held in the upper position L1 (first substrate position).

搬送裝置例如可具備有支撐基板9之下表面之沿著Y軸方向延伸之複數個指部80。複數個指部80可包含有進入被配置在靠-X側位置之支撐部52b及被配置在中央位置之支撐部52a之間的1個以上之指部80、及可進入被配置在中央位置之支撐部52b與配置在+X側位置之支撐部52a之間的位置之1個以上之指部80(參照圖4)。使支撐基板9之各指部80經由開閉部10P而進入收容空間10S,其後,使各指部80在對應之各支撐部52間朝下方移動。藉此,基板9在各指部80與各支撐部52不會產生干涉之狀態下被交接至各支撐部52。 The conveying device may include, for example, a plurality of fingers 80 extending along the Y-axis direction on the lower surface of the support substrate 9. The plurality of fingers 80 may include one or more fingers 80 that enter between the support portion 52b disposed near the -X side position and the support portion 52a disposed at the center position, and may enter and be disposed at the center position One or more finger portions 80 (see FIG. 4) at a position between the supporting portion 52b and the supporting portion 52a disposed at the +X side position. Each finger portion 80 of the support substrate 9 enters the storage space 10S via the opening and closing portion 10P, and thereafter, the finger portion 80 moves downward between the corresponding support portions 52. As a result, the substrate 9 is transferred to the support portions 52 in a state where the fingers 80 and the support portions 52 do not interfere.

圖5係顯示開始進行排氣時之減壓乾燥裝置1的概略側視圖。若搬入步驟S1結束,便進行排氣步驟S2。在排氣步驟S2中,藉由控制部70使抽吸機構20作動,而將收容空間10S之環境氣體自複數個排氣口14排出。 FIG. 5 is a schematic side view showing the reduced-pressure drying device 1 when exhausting is started. When the carry-in step S1 ends, the exhaust step S2 is performed. In the exhaust step S2, the control unit 70 actuates the suction mechanism 20 to exhaust the ambient gas in the storage space 10S from the plurality of exhaust ports 14.

如圖5所示,收容空間10S之環境氣體朝向排氣口 14移動。此處,收容空間10S之環境氣體之朝向排氣口14移動的方向,係由第2整流板40a~40d所變更。詳細而言,第2整流板40a、40b、40c、40d上之環境氣體之行進方向,係藉由作為水平面之該等之上表面而被變更為朝向該等之端部的水平方向。然後,環境氣體向下通過第2整流板40a與第2整流板40b之間隙、第2整流板40b與第2整流板40c之間隙、第2整流板40c與第2整流板40d之間隙、及包圍收容空間10S四邊之壁面104與第2整流板40a、40b、40c、40d各者之端部之間隙,而朝第2整流板40a、40b、40c、40d之下方移動。 As shown in FIG. 5, the ambient gas in the storage space 10S moves toward the exhaust port 14. Here, the direction in which the ambient gas in the storage space 10S moves toward the exhaust port 14 is changed by the second rectifying plates 40a to 40d. In detail, the traveling direction of the ambient gas on the second rectifying plates 40a, 40b, 40c, and 40d is changed to the horizontal direction toward the ends by the upper surfaces that are horizontal planes. Then, the ambient gas passes downward through the gap between the second rectifying plate 40a and the second rectifying plate 40b, the gap between the second rectifying plate 40b and the second rectifying plate 40c, the gap between the second rectifying plate 40c and the second rectifying plate 40d, and The gap between the wall surface 104 surrounding the four sides of the storage space 10S and the end of each of the second rectifying plates 40a, 40b, 40c, and 40d moves downward under the second rectifying plates 40a, 40b, 40c, and 40d.

又,環境氣體之朝向排氣口14移動的方向,係由複數個第1整流板30所變更。詳細而言,朝向第2整流板40a、40b、40c、40d之下方移動之環境氣體的行進方向,係藉由作為水平面之複數個第1整流板30(-X側第1整流板30a及+X側第1整流板30b)之上表面而被變更為朝向該等複數個第1整流板30之端部(包含-X側端部32a及+X側端部32b)的水平方向。又,朝向第2整流板40a、40b、40c、40d之下方移動之環境氣體的行進方向,係藉由作為水平面之底面100(外表面102)而被變更為朝向作為該底面100(外表面102)之端部之凹部12之內緣部的水平方向。其後,環境氣體於凹部12之內緣部(包含-X側緣部124a及+X側緣部124b)與第1整流板30之周端部之間隙(包含-X側間隙34a及+X側間隙34b)向下移動,藉此進入各凹部12內。然後,經由各凹部12內之排氣口14而朝外部被排出。 In addition, the direction in which the ambient gas moves toward the exhaust port 14 is changed by the plurality of first rectifying plates 30. In detail, the traveling direction of the ambient gas moving below the second rectifier plates 40a, 40b, 40c, and 40d is determined by a plurality of first rectifier plates 30 (-X side first rectifier plates 30a and + The upper surface of the X-side first rectifier plate 30b) is changed to face the horizontal direction of the end portions (including the -X-side end portion 32a and the +X-side end portion 32b) of the plurality of first rectifier plates 30. Furthermore, the traveling direction of the ambient gas moving below the second rectifier plates 40a, 40b, 40c, 40d is changed to the bottom surface 100 (outer surface 102) by the bottom surface 100 (outer surface 102) which is a horizontal plane ) In the horizontal direction of the inner edge of the recess 12 at the end of the end. Thereafter, the gap between the inner edge of the recess 12 (including the -X side edge 124a and the +X side edge 124b) and the peripheral end of the first fairing plate 30 (including the -X side gap 34a and +X) The side gap 34b) moves downward, thereby entering each recess 12. Then, it is discharged to the outside through the exhaust port 14 in each recess 12.

排氣步驟S2於一開始後,由於在收容空間10S便存在大量之環境氣體,因此環境氣體之流速會在排氣口14附近變大。 在本實施形態中,該排氣步驟S2於一開始後,便將基板9配置在離開如此流速變快之排氣口14附近之第1基板位置L1,可藉此抑制被塗布於上表面90之處理液之表面混亂、突沸(bumping)之情形。藉此,可減輕處理液中乾燥不均的發生。 After the exhaust step S2 starts, a large amount of ambient gas exists in the storage space 10S, so the flow rate of the ambient gas becomes larger near the exhaust port 14. In the present embodiment, after the start of the exhaust step S2, the substrate 9 is disposed at the first substrate position L1 near the exhaust port 14 where the flow rate is increased so as to suppress coating on the upper surface 90 The surface of the treatment liquid is chaotic and bumping. This can reduce the occurrence of uneven drying in the treatment liquid.

圖6係顯示開始進行排氣後經過既定時間時之減壓乾燥裝置1的概略側視圖。於排氣步驟S2之間,進行下降步驟S3。在下降步驟S3中,控制部70於開始進行排氣後經過既定時間(第1既定時間)之後,使複數個支撐部52下降。藉此,基板9自上位置L1移動至下位置L2(第2基板位置)。下位置L2係較上位置L1更鉛直方向之下側,且靠近排氣口14之位置。 FIG. 6 is a schematic side view showing the reduced-pressure drying device 1 when a predetermined time has passed after the start of exhaust. Between the exhaust step S2, a descending step S3 is performed. In the lowering step S3, the control unit 70 lowers the plurality of support units 52 after a predetermined time (first predetermined time) has elapsed after starting the exhaust. As a result, the substrate 9 moves from the upper position L1 to the lower position L2 (second substrate position). The lower position L2 is a position lower in the vertical direction than the upper position L1 and close to the exhaust port 14.

下位置L2由於較上位置L1更靠近排氣口14,因此環境氣體相對地稀薄,氣壓較低。因此,藉由將基板9配置於下位置L2,可有效率地使基板9之處理液乾燥。此處,即便將基板9配置在下位置L2,由於基板9周圍之環境氣體之流速較小,因此引起處理液表面之混亂或處理液之突沸之可能性較低。其原因係在開始排氣後已經過第1既定時間。 Since the lower position L2 is closer to the exhaust port 14 than the upper position L1, the ambient gas is relatively lean and the air pressure is low. Therefore, by disposing the substrate 9 at the lower position L2, the processing liquid of the substrate 9 can be efficiently dried. Here, even if the substrate 9 is arranged at the lower position L2, since the flow velocity of the ambient gas around the substrate 9 is small, there is a low possibility of causing chaos on the surface of the processing liquid or bumping of the processing liquid. The reason is that the first predetermined time has passed after the start of exhaust.

圖7係顯示使處理後之基板9搬出外部時之減壓乾燥裝置1的概略側視圖。若排氣步驟S3結束,便進行搬出步驟S4。在搬出步驟S4中,控制部70於開始進行排氣後經過既定時間(第2既定時間)之後,使排氣停止。藉此,殘存於收容空間10S之環境氣體之流動停止。然後,藉由進行收容空間10S之大氣開放,使收容空間10S內之氣壓恢復。收容空間10S之大氣開放既可經由排氣口14來進行,或者,亦可經由未圖示之吸氣口來進行。 7 is a schematic side view showing the vacuum drying apparatus 1 when the processed substrate 9 is carried out. When the exhaust step S3 ends, the carry-out step S4 is performed. In the unloading step S4, the control unit 70 stops the exhaust after a predetermined time (second predetermined time) elapses after starting the exhaust. As a result, the flow of ambient gas remaining in the storage space 10S is stopped. Then, by opening the atmosphere of the storage space 10S, the air pressure in the storage space 10S is restored. The opening of the atmosphere in the storage space 10S may be performed through the exhaust port 14 or may be performed through an intake port (not shown).

在搬出步驟S4中,藉由控制部70使支撐基板9之複 數個支撐部52上升,而使基板9自下位置L2移動至上位置L1。再者,收容空間10S之大氣開放亦可於使基板9自下位置L2移動至上位置L1後、或者在使基板9自下位置L2朝向上位置L1移動之期間內進行。 In the unloading step S4, the control portion 70 raises the plurality of support portions 52 of the support substrate 9 to move the substrate 9 from the lower position L2 to the upper position L1. Furthermore, the atmosphere of the storage space 10S may be opened after the substrate 9 is moved from the lower position L2 to the upper position L1, or during the period when the substrate 9 is moved from the lower position L2 toward the upper position L1.

又,若控制部70打開開閉部10P,未圖示之搬送裝置經由被開放之開閉部10P而接取被支撐在上位置L1之基板9,並將該基板9自收容空間10S搬出。 When the control unit 70 opens the opening/closing unit 10P, the transport device (not shown) picks up the substrate 9 supported at the upper position L1 via the opened opening/closing unit 10P, and removes the substrate 9 from the storage space 10S.

如圖5及圖6所示,在減壓乾燥裝置1中,在作為被設置於腔室10之底面100之挖掘部的凹部12設置有排氣口14。因此,凹部12之開口由於較排氣口14大,因此可使排氣口14之外觀上的開口面積變大。藉此,可於排氣步驟S2中,使環境氣體朝向排氣口14之流速降低。 As shown in FIGS. 5 and 6, in the reduced-pressure drying device 1, an exhaust port 14 is provided in a concave portion 12 that is an excavation portion provided on the bottom surface 100 of the chamber 10. Therefore, since the opening of the recessed portion 12 is larger than the exhaust port 14, the appearance area of the exhaust port 14 can be increased. Thereby, in the exhaust step S2, the flow velocity of the ambient gas toward the exhaust port 14 can be reduced.

如圖5及圖6所示,在減壓乾燥裝置1中,利用第1整流板30來覆蓋排氣口14之上方。藉由該第1整流板30,可妨礙較收容空間10S之第1整流板30更上方之環境氣體朝向排氣口14被直接吸入之情形。由於環境氣體自第1整流板30之周圍朝第1整流板30之下方被吸入,因此可使自基板9所觀察之環境氣體之吸入口在外觀上擴大,並且使其分散。藉此,可降低基板9之周圍之環境氣體的流速。 As shown in FIGS. 5 and 6, in the reduced-pressure drying device 1, the first rectifying plate 30 covers the upper portion of the exhaust port 14. The first rectifying plate 30 can prevent the ambient air above the first rectifying plate 30 of the storage space 10S from being directly sucked toward the exhaust port 14. Since the ambient gas is sucked from around the first rectifying plate 30 toward the lower side of the first rectifying plate 30, the suction port of the ambient gas observed from the substrate 9 can be enlarged in appearance and dispersed. With this, the flow velocity of the ambient gas around the substrate 9 can be reduced.

如圖5及圖6所示,在減壓乾燥裝置1中,利用第2整流板40(第2整流板40a、40b、40c、40d)來覆蓋凹部12之內緣部與第1整流板30之端部之間隙(-X側間隙34a及+X側間隙34b)的上方。藉此,可妨礙第2整流板40正上方之環境氣體被直接吸入凹部12與第1整流板30之間隙之情形。由於環境氣體自第2整 流板40之周圍被吸入第2整流板40之下方,因此可使自基板9所觀察之環境氣體之吸入口在外觀上擴大,並且可使其分散。藉此,可降低基板9周圍之環境氣體的流速。 As shown in FIGS. 5 and 6, in the reduced-pressure drying device 1, the inner edge of the recess 12 and the first rectifier plate 30 are covered by the second rectifier plate 40 (second rectifier plates 40 a, 40 b, 40 c, and 40 d). Above the gap (-X side gap 34a and +X side gap 34b). This can prevent the ambient air directly above the second rectifying plate 40 from being directly sucked into the gap between the recess 12 and the first rectifying plate 30. Since the ambient gas is sucked into the lower portion of the second rectifying plate 40 from around the second rectifier plate 40, the suction port of the ambient gas viewed from the substrate 9 can be enlarged in appearance and can be dispersed. Thereby, the flow velocity of the ambient gas around the substrate 9 can be reduced.

如圖5及圖6所示,第2整流板40與第1整流板30之間隙、第2整流板40與底面100(外表面102)之間隙、及第1整流板30與底面120之間隙,分別沿著水平方向擴展。因此,藉由收容空間10S之環境氣體在到達被設於鉛直方向之下側之排氣口14之前通過該等間隙,氣流的方向朝鉛直方向與水平方向地被變更為鋸齒狀。於該情形時,相較於未設置第1整流板30及第2整流板40時,可使環境氣體流動之通路的總距離變長。藉此,可謀求環境氣體之流速的降低。 As shown in FIGS. 5 and 6, the gap between the second rectifier plate 40 and the first rectifier plate 30, the gap between the second rectifier plate 40 and the bottom surface 100 (outer surface 102 ), and the gap between the first rectifier plate 30 and the bottom surface 120 , Expanding along the horizontal direction respectively. Therefore, since the ambient gas in the storage space 10S passes through these gaps before reaching the exhaust port 14 provided on the lower side in the vertical direction, the direction of the air flow is changed into a zigzag pattern in the vertical direction and the horizontal direction. In this case, compared with the case where the first rectifying plate 30 and the second rectifying plate 40 are not provided, the total distance of the passage through which the ambient gas flows can be made longer. This can reduce the flow velocity of the ambient gas.

藉由將第1整流板30、第2整流板40設為平坦之板狀,可抑制氣流在該等之表面上混亂之情形。又,藉由將腔室10之底面100(外表面102)及凹部12之底面120亦設為平面,可抑制氣流在該等之面上混亂之情形。 By making the first rectifying plate 30 and the second rectifying plate 40 into a flat plate shape, it is possible to suppress the disorder of the air flow on the surfaces of these. Furthermore, by making the bottom surface 100 (outer surface 102) of the chamber 10 and the bottom surface 120 of the recess 12 also flat, it is possible to suppress the disorder of the airflow on these surfaces.

<2.變形例> <2. Modifications>

以上,雖已對實施形態進行說明,但本發明並非被限定於如上所述者,而可進行各種變形。 Although the embodiments have been described above, the present invention is not limited to those described above, and various modifications can be made.

在上述實施形態中,排氣口14雖被設置於凹部12之凹部深度方向的底面120,但亦可被設置於凹部12之內壁面122。 In the above-described embodiment, the exhaust port 14 is provided on the bottom surface 120 of the recess 12 in the depth direction of the recess, but may also be provided on the inner wall surface 122 of the recess 12.

在上述實施形態中,排氣口14被設置於在鉛直方向之下側之底面100所設置的凹部12內。排氣口14亦可面向收容空間10S而被設置於自底面100之外周端部朝鉛直方向之向上立起的 壁面104。 In the above embodiment, the exhaust port 14 is provided in the concave portion 12 provided on the bottom surface 100 on the lower side in the vertical direction. The exhaust port 14 may face the storage space 10S and be provided on the wall surface 104 that rises upward in the vertical direction from the outer peripheral end of the bottom surface 100.

圖8係顯示變形例之減壓乾燥裝置1A的圖。在上述實施形態中,於凹部12之內部配置有第1整流板30。亦可如圖8所示之減壓乾燥裝置1A般,將第1整流板30設置於凹部12之上方(凹部12之外部)。又,亦可如減壓乾燥裝置1A般,將第2整流板40(第2整流板40a、40b、40c、40d)配置於較第1整流板30更下側(靠近排氣口14之側)。第2整流板40被配置於Z軸方向上與第1整流板30之端部(-X側端部32a或+X側端部32b)及凹部12之內緣部(-X側緣部124a或+X側緣部124b)重疊的位置。亦即,於自鉛直方向之上側朝鉛直方向之向下(-Z方向)俯視透視第1整流板30、第2整流板40及凹部12之情形時,第2整流板40被配置於收容空間10S中與第1整流板30之外周端部及凹部12之內緣部雙方重疊的位置。藉由如此地設置第2整流板40,亦可妨礙環境氣體被吸入第1整流板30與凹部12之間隙之情形。 FIG. 8 is a diagram showing a reduced-pressure drying device 1A according to a modification. In the above-mentioned embodiment, the first rectifying plate 30 is arranged inside the concave portion 12. As in the reduced-pressure drying apparatus 1A shown in FIG. 8, the first rectifying plate 30 may be provided above the recess 12 (outside the recess 12). In addition, the second rectifying plate 40 (second rectifying plates 40a, 40b, 40c, 40d) may be arranged on the lower side (the side closer to the exhaust port 14) than the first rectifying plate 30, as in the reduced-pressure drying apparatus 1A. ). The second rectifying plate 40 is arranged in the Z-axis direction with the end of the first rectifying plate 30 (-X side end 32a or +X side end 32b) and the inner edge of the recess 12 (-X side edge 124a Or the position where the +X side edge portion 124b) overlaps. That is, when the first rectifier plate 30, the second rectifier plate 40, and the recess 12 are seen through from above in the vertical direction toward the vertical direction (-Z direction), the second rectifier plate 40 is disposed in the storage space The position in 10S that overlaps both the outer peripheral end of the first fairing plate 30 and the inner edge of the recess 12. By providing the second rectifying plate 40 in this way, it is also possible to prevent the situation where the ambient gas is sucked into the gap between the first rectifying plate 30 and the recess 12.

雖已詳細地說明本發明,但上述說明之所有態樣僅為例示,本發明並非被限定於該等態樣者。未例示之無數個變形例,可被理解為不超出本發明之範圍即可思及者。上述各實施形態及各變形例所說明之各構成,只要不相互矛盾即可適當地加以組合、或予以省略。 Although the present invention has been described in detail, all the aspects described above are only examples, and the present invention is not limited to those aspects. Countless modifications that are not illustrated can be understood as those that can be considered without exceeding the scope of the present invention. The configurations described in the above embodiments and the modified examples can be appropriately combined or omitted as long as they do not contradict each other.

1‧‧‧減壓乾燥裝置 1‧‧‧Decompression drying device

9‧‧‧基板 9‧‧‧ substrate

10‧‧‧腔室(框體) 10‧‧‧ chamber (frame)

10P‧‧‧開閉部 10P‧‧‧Opening and closing department

10S‧‧‧收容空間 10S‧‧‧ containment space

12‧‧‧凹部 12‧‧‧recess

12a‧‧‧-X側凹部 12a‧‧‧-X side concave part

12b‧‧‧+X側凹部 12b‧‧‧+X undercut

14‧‧‧排氣口 14‧‧‧Exhaust

20‧‧‧抽吸機構 20‧‧‧Suction mechanism

30a‧‧‧-X側第1整流板 30a‧‧‧-X side first rectifier board

30b‧‧‧+X側第1整流板 30b‧‧‧+X side first rectifier board

32a‧‧‧-X側端部 32a‧‧‧-X side end

32b‧‧‧+X側端部 32b‧‧‧+X side end

34a‧‧‧-X側間隙 34a‧‧‧-X side clearance

34b‧‧‧+X側間隙 34b‧‧‧+X side clearance

40a、40b、40c、40d‧‧‧第2整流板(第2構件) 40a, 40b, 40c, 40d ‧‧‧ 2nd rectifier plate (2nd member)

50‧‧‧升降機構 50‧‧‧ Lifting mechanism

52a、52b‧‧‧支撐部(基板保持部) 52a, 52b‧‧‧support part (substrate holding part)

54‧‧‧升降驅動部(移動驅動部) 54‧‧‧Elevating drive unit (mobile drive unit)

70‧‧‧控制部 70‧‧‧Control Department

90‧‧‧上表面 90‧‧‧upper surface

100‧‧‧底面(第1面) 100‧‧‧Bottom (1st side)

102‧‧‧外表面 102‧‧‧Outer surface

104‧‧‧壁面 104‧‧‧ Wall

120‧‧‧底面 120‧‧‧Bottom

122‧‧‧內壁面 122‧‧‧Inner wall

124a‧‧‧-X側緣部(內緣部) 124a‧‧‧-X side edge (inner edge)

124b‧‧‧+X側緣部(內緣部) 124b‧‧‧+X side edge (inner edge)

520‧‧‧升降板 520‧‧‧Lifting board

522‧‧‧銷 522‧‧‧pin

Claims (11)

一種減壓乾燥裝置,係藉由減壓而使存在於具有第1主表面及第2主表面之基板之上述第1主表面上之處理液乾燥者;其具備有:框體,其具有可收容上述基板之收容空間,並且具有面向上述收容空間之第1面;凹部,其被設置於上述第1面;排氣口,其被設置於上述凹部之深度方向之底面;抽吸機構,其經由上述排氣口而抽吸上述收容空間之環境氣體;第1構件,其被配置於上述收容空間中在上述深度方向上與上述排氣口重疊之位置;第2構件,其被配置於上述收容空間中與上述第1構件之端部及上述凹部之內緣部沿著上述深度方向隔開間隔之位置且於上述深度方向上與上述端部及上述內緣部重疊之位置;以及基板保持部,其將上述基板保持在上述收容空間中相對於上述第1構件及上述第2構件而與上述排氣口為相反側之位置。 A reduced-pressure drying device that dries a processing liquid present on the first main surface of a substrate having a first main surface and a second main surface by reducing pressure; it includes: a frame body, which has A storage space for accommodating the substrate, and having a first surface facing the storage space; a recessed portion, which is provided on the first surface; an exhaust port, which is disposed on a bottom surface in the depth direction of the recessed portion; a suction mechanism, which The ambient gas of the storage space is sucked through the exhaust port; the first member is disposed at a position overlapping the exhaust port in the depth direction in the storage space; the second member is disposed at the above A position spaced apart from the end of the first member and the inner edge of the recess along the depth direction in the storage space and overlapping the end and the inner edge in the depth direction; and the substrate holding A portion that holds the substrate in the storage space at a position opposite to the exhaust port with respect to the first member and the second member. 如請求項1之減壓乾燥裝置,其中,上述基板保持部包含有支撐上述基板之上述第2主表面之複數個銷。 The reduced-pressure drying device according to claim 1, wherein the substrate holding portion includes a plurality of pins that support the second main surface of the substrate. 如請求項2之減壓乾燥裝置,其中,上述複數個銷包含有:複數個第1銷,其等沿著第1方向被排列;及複數個第2銷,其等自上述複數個第1銷朝與上述第1方向正交之第2方向隔開間隔地沿著上述第1方向被排列;上述第2構件被配置於上述複數個第1銷與上述複數個第2銷之間。 The reduced-pressure drying device according to claim 2, wherein the plurality of pins include: a plurality of first pins, which are arranged along the first direction; and a plurality of second pins, which are equal to the plurality of first pins The pins are arranged along the first direction at intervals in a second direction orthogonal to the first direction; the second member is arranged between the plurality of first pins and the plurality of second pins. 如請求項1至3中任一項之減壓乾燥裝置,其中,其進一步具 備有:移動驅動部,其藉由使上述複數個銷沿著上述深度方向移動,而使上述基板在第1基板位置與較上述第1基板位置更靠近上述排氣口之第2基板位置之間移動。 The reduced-pressure drying device according to any one of claims 1 to 3, further comprising: a moving drive section that moves the plurality of pins along the depth direction to move the substrate on the first substrate The position moves between the position of the second substrate closer to the exhaust port than the position of the first substrate. 如請求項4之減壓乾燥裝置,其中,上述移動驅動部於上述抽吸機構開始經由上述排氣口來抽吸上述收容空間之環境氣體後,使上述基板自上述第1基板位置朝上述第2基板位置移動。 The reduced-pressure drying device according to claim 4, wherein the movement driving section moves the substrate from the position of the first substrate toward the first position after the suction mechanism starts to suck the ambient gas in the storage space through the exhaust port 2 The substrate position moves. 如請求項1至3中任一項之減壓乾燥裝置,其中,上述第1構件被設置於上述第2構件與上述排氣口之間。 The reduced-pressure drying device according to any one of claims 1 to 3, wherein the first member is provided between the second member and the exhaust port. 如請求項6之減壓乾燥裝置,其中,上述第1構件之至少一部分位於上述凹部內。 The reduced-pressure drying device according to claim 6, wherein at least a part of the first member is located in the concave portion. 如請求項7之減壓乾燥裝置,其中,上述第1構件全部位於上述凹部內。 The reduced-pressure drying device according to claim 7, wherein all of the first members are located in the concave portion. 如請求項8之減壓乾燥裝置,其中,上述端部與上述內緣部位在同一平面上。 The reduced-pressure drying device according to claim 8, wherein the end portion and the inner edge portion are on the same plane. 如請求項1至3中任一項之減壓乾燥裝置,其中,上述基板保持部以上述第1主表面成為在鉛直方向朝上之水平姿勢來保持上述基板,上述第1構件、上述第2構件及上述排氣口位於被保持在上述基板保持部之上述基板的上述第2主表面側。 The reduced-pressure drying device according to any one of claims 1 to 3, wherein the substrate holding section holds the substrate with the first main surface in a horizontal posture in a vertical direction, the first member, the second The member and the exhaust port are located on the second main surface side of the substrate held by the substrate holding portion. 一種減壓乾燥方法,係藉由減壓而使存在於具有第1主表面及第2主表面之基板之上述第1主表面上的處理液乾燥者;其具有:第1步驟,其將上述基板搬入具有收容空間及面向該收容空間之第1面之框體的上述收容空間;以及第2步驟,其於上述第1步驟之後,經由被設置於在上述第1面 所設置之凹部之深度方向之底面的排氣口,來抽吸上述收容空間之環境氣體;上述第2步驟包含有:藉由被配置於上述收容空間中在上述深度方向上與上述排氣口重疊之位置之第1構件來變更朝向上述排氣口之氣流的方向之步驟;以及藉由被配置於上述收容空間中與上述第1構件之端部及上述凹部之內緣部雙方沿著上述深度方向隔開間隔之位置且在上述深度方向上與上述端部及上述內緣部之雙方重疊之位置之第2構件來變更朝向上述排氣口之氣流的方向之步驟。 A method of drying under reduced pressure by drying the treatment liquid existing on the first main surface of the substrate having the first main surface and the second main surface by reducing the pressure; The substrate is carried into the storage space having a storage space and a frame facing the first surface of the storage space; and a second step after the first step, through the depth of the recess provided in the first surface The exhaust port on the bottom surface in the direction to suck the ambient gas in the storage space; the second step includes: by being disposed in a position in the storage space that overlaps with the exhaust port in the depth direction The step of changing the direction of the airflow toward the exhaust port by the member; and the distance between the end of the first member and the inner edge of the recess by being disposed in the receiving space along the depth direction The step of changing the direction of the airflow toward the exhaust port by the second member at a position that overlaps with both the end portion and the inner edge portion in the depth direction.
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