TWI742374B - Reduced pressure drying apparatus and reduced pressure drying method - Google Patents

Reduced pressure drying apparatus and reduced pressure drying method Download PDF

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TWI742374B
TWI742374B TW108116955A TW108116955A TWI742374B TW I742374 B TWI742374 B TW I742374B TW 108116955 A TW108116955 A TW 108116955A TW 108116955 A TW108116955 A TW 108116955A TW I742374 B TWI742374 B TW I742374B
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substrate
exhaust port
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rectifying plate
drying device
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TW202004847A (en
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富藤幸雄
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日商斯庫林集團股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/04Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases
    • B05D3/0406Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases the gas being air
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67259Position monitoring, e.g. misposition detection or presence detection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions

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  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Drying Of Solid Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
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  • Coating Apparatus (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
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Abstract

本發明之課題,在於提供在利用減壓使基板上之處理液乾燥時,減輕處理液之乾燥不均的發生之技術。 The subject of the present invention is to provide a technique for reducing the occurrence of uneven drying of the processing liquid when the processing liquid on the substrate is dried under reduced pressure.

本發明於腔室10內之底面100設置有凹部12,並於該凹部12之底面120設置有排氣口14。於收容空間10S內之Z軸方向(凹部12之深度方向)上與排氣口14重疊之位置設置有第1整流板30。於第1整流板30之端部(-X側端部32a或+X側端部32b)及凹部12之內緣部(-X側緣部124a或+X側緣部124b)在Z軸方向(凹部12之深度方向)上重疊之位置設置有第2整流板40。複數個保持部52在第1整流板30及第2整流板40之上方之位置(上位置L1或下位置L2)保持基板9。 In the present invention, a recess 12 is provided on the bottom surface 100 of the cavity 10, and an exhaust port 14 is provided on the bottom surface 120 of the recess 12. A first rectifying plate 30 is provided at a position overlapping with the exhaust port 14 in the Z-axis direction (the depth direction of the recess 12) in the accommodating space 10S. At the end (-X side end 32a or +X side end 32b) of the first rectifying plate 30 and the inner edge of the recess 12 (-X side edge 124a or +X side edge 124b) in the Z-axis direction A second rectifying plate 40 is provided at a position overlapping (the depth direction of the recess 12). The plurality of holding parts 52 hold the substrate 9 at a position above the first rectifying plate 30 and the second rectifying plate 40 (upper position L1 or lower position L2).

Description

減壓乾燥裝置及減壓乾燥方法 Decompression drying device and decompression drying method

本發明關於減壓乾燥裝置及減壓乾燥方法,尤其關於使塗布於基板上之處理液乾燥之技術。作為處理對象之基板,例如包含有半導體基板、液晶顯示裝置及有機EL(Electroluminescence;電致發光)顯示裝置等之FPD(Flat Panel Display;平板顯示器)用基板、光碟用基板、磁碟用基板、光磁碟用基板、光罩用基板、陶瓷基板、太陽能電池用基板、印刷電路基板等。 The present invention relates to a reduced-pressure drying device and a reduced-pressure drying method, and more particularly to a technique for drying a processing liquid coated on a substrate. The substrates to be processed include, for example, semiconductor substrates, liquid crystal display devices, and organic EL (Electroluminescence; electroluminescence) display devices such as FPD (Flat Panel Display) substrates, optical disk substrates, magnetic disk substrates, Substrates for optical disks, substrates for photomasks, ceramic substrates, substrates for solar cells, printed circuit boards, etc.

過去以來,基板處理裝置(例如,液晶面板製造裝置等)已知有對表面被塗布有處理液之基板實施減壓乾燥處理之減壓乾燥裝置。例如,於光蝕刻(Photolithography)步驟中,存在有為了在預烘烤(Pre-baking)之前使塗布於玻璃基板等之被處理基板上之抗蝕劑液的塗布膜適度地乾燥而使用減壓乾燥裝置之情形。 In the past, a substrate processing apparatus (for example, a liquid crystal panel manufacturing apparatus, etc.) has known a reduced-pressure drying apparatus that performs a reduced-pressure drying process on a substrate coated with a processing liquid on the surface. For example, in the photolithography step, there is the use of reduced pressure in order to appropriately dry the coating film of the resist solution applied on the substrate to be processed, such as a glass substrate, before pre-baking. The situation of the drying device.

習知之具代表性之減壓乾燥裝置,例如如專利文獻1所記載般,在配設於可開閉之腔室中之適當高度之基板支撐構件上水平地載置基板後,關閉腔室而進行減壓乾燥處理(例如,參照專利文獻1、2)。 A conventional representative reduced-pressure drying device, for example, as described in Patent Document 1, is performed by placing the substrate horizontally on a substrate support member of an appropriate height arranged in an openable and closable chamber, and then closing the chamber. Drying treatment under reduced pressure (for example, refer to Patent Documents 1 and 2).

在此種之減壓乾燥處理中,首先,通過被設置於腔室 內之排氣口而藉由外部之真空泵來進行腔室內之真空排氣。藉由該真空排氣,腔室內之壓力自當時為止之大氣壓狀態變成減壓狀態,並在該減壓狀態下,溶劑成分自基板上之抗蝕劑塗布膜蒸發。在腔室內之壓力被減壓至一定壓力之時間點,使腔室內之減壓結束,其後,從被設置於腔室內之供給口噴出或擴散放出惰性氣體(例如氮氣)或空氣,而使腔室內之壓力回到大氣壓力(使腔室復壓)。若腔室內恢復壓力,腔室便被打開,基板便會自腔室內被搬出。 In this type of reduced-pressure drying treatment, first, the chamber is evacuated by an external vacuum pump through an exhaust port provided in the chamber. By this vacuum exhaust, the pressure in the chamber has changed from the atmospheric pressure state to a reduced pressure state, and in this reduced pressure state, the solvent component evaporates from the resist coating film on the substrate. At the point in time when the pressure in the chamber is reduced to a certain pressure, the pressure in the chamber is ended. After that, inert gas (such as nitrogen) or air is ejected or diffused from the supply port provided in the chamber to make The pressure in the chamber returns to atmospheric pressure (recompresses the chamber). If the pressure in the chamber is restored, the chamber will be opened and the substrate will be removed from the chamber.

於腔室內進行真空排氣之情形時,一般而言,越靠近排氣口環境氣體之流速就會越大。於流速大之情形時,存在有基板上之處理液之表面狀態會混亂的可能性,而存在有發生乾燥不均之可能性。在專利文獻1中,中板被設置於在腔室之底部所設置之排氣口的上方。藉由排氣口由中板所覆蓋,而形成經由中板與腔室之底部之間至排氣口之排氣路徑。又,於專利文獻2中,亦記載有在被設置於底部之排氣口之上方配置整流板之情形。 In the case of vacuum exhaust in the chamber, generally speaking, the closer to the exhaust port, the greater the flow rate of the ambient gas. When the flow rate is high, there is a possibility that the surface condition of the processing liquid on the substrate will be disordered, and there is a possibility that uneven drying may occur. In Patent Document 1, the middle plate is provided above the exhaust port provided at the bottom of the chamber. The exhaust port is covered by the middle plate to form an exhaust path from the middle plate and the bottom of the chamber to the exhaust port. In addition, Patent Document 2 also describes that a rectifying plate is arranged above the exhaust port provided at the bottom.

[先前技術文獻] [Prior Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本專利特開平9-320949號公報 [Patent Document 1] Japanese Patent Laid-Open No. 9-320949

[專利文獻2]日本專利特開2004-47582號公報 [Patent Document 2] Japanese Patent Laid-Open No. 2004-47582

在上述習知技術中,由於環境氣體自中板之周端部與腔室之側壁之間隙被吸入,因此在靠近該間隙之區域環境氣體之流速會變大。因此,藉由基板被配置於該間隙之周邊,存在有基板上之處理液會發生乾燥不均之可能性,而有改善的空間。 In the above-mentioned conventional technology, since the ambient gas is sucked in from the gap between the peripheral end of the middle plate and the side wall of the chamber, the flow velocity of the ambient gas in the region close to the gap becomes larger. Therefore, since the substrate is arranged on the periphery of the gap, there is a possibility that the processing liquid on the substrate will be unevenly dried, and there is room for improvement.

本發明以提供在利用減壓使基板上之處理液乾燥時,減輕處理液之乾燥不均的發生之技術為目的。 The present invention aims to provide a technique for reducing the occurrence of uneven drying of the processing liquid when the processing liquid on the substrate is dried under reduced pressure.

為了解決上述課題,第1態樣係藉由減壓而使存在於具有第1主表面及第2主表面之基板之上述第1主表面上之處理液乾燥之減壓乾燥裝置;其具備有:框體,其具有可收容上述基板之收容空間,並且具有面向上述收容空間之第1面;凹部,其被設置於上述第1面;排氣口,其被設置於上述凹部之深度方向之底面;抽吸機構,其經由上述排氣口而抽吸上述收容空間之環境氣體;第1構件,其被配置於上述收容空間中在上述深度方向上與上述排氣口重疊之位置;第2構件,其被配置於上述收容空間中與上述第1構件之端部及上述凹部之內緣部沿著上述深度方向隔開間隔之位置且於上述深度方向上與上述端部及上述內緣部重疊之位置;以及基板保持部,其將上述基板保持在上述收容空間中相對於上述第1構件及上述第2構件而與上述排氣口為相反側之位置。 In order to solve the above-mentioned problems, the first aspect is a reduced-pressure drying device that dries the treatment liquid existing on the first major surface of the substrate having the first major surface and the second major surface by reducing the pressure; : Frame body, which has a storage space that can contain the substrate, and has a first surface facing the storage space; a recessed portion provided on the first surface; an exhaust port provided in the depth direction of the recessed portion Bottom surface; a suction mechanism that sucks the ambient gas in the storage space through the exhaust port; a first member, which is arranged in the storage space at a position overlapping the exhaust port in the depth direction; second A member, which is arranged in the housing space at a position spaced apart from the end of the first member and the inner edge of the recess along the depth direction, and is arranged in the depth direction from the end and the inner edge Overlapping position; and a substrate holding portion that holds the substrate in the accommodating space at a position opposite to the exhaust port with respect to the first member and the second member.

第2態樣係於第1態樣之減壓乾燥裝置中,上述基板保持部包含有支撐上述基板之上述第2主表面之複數個銷。 In the second aspect, in the reduced-pressure drying device of the first aspect, the substrate holding portion includes a plurality of pins supporting the second main surface of the substrate.

第3態樣係於第2態樣之減壓乾燥裝置中,上述複數個銷包含有:複數個第1銷,其等沿著第1方向被排列;及複數個第2銷,其等自上述複數個第1銷朝與上述第1方向正交之第2方向隔開間隔地沿著上述第1方向被排列;上述第2構件被配置於上述複數個第1銷與上述複數個第2銷之間。 The third aspect is in the reduced-pressure drying device of the second aspect. The plurality of pins includes: a plurality of first pins arranged along the first direction; and a plurality of second pins, etc. The plurality of first pins are arranged along the first direction at intervals in a second direction orthogonal to the first direction; the second member is arranged on the plurality of first pins and the plurality of second Between pins.

第4態樣係於第2態樣或第3態樣之減壓乾燥裝置中,進一步具備有:移動驅動部,其藉由使上述複數個銷沿著上述深度方向移動,而使上述基板在第1基板位置與較上述第1基板位置更靠近上述排氣口之第2基板位置之間移動。 The fourth aspect is the reduced-pressure drying device of the second aspect or the third aspect, and further includes: a moving drive portion that moves the plurality of pins along the depth direction to move the substrate at Move between the first substrate position and the second substrate position closer to the exhaust port than the first substrate position.

第5態樣係於第4態樣之減壓乾燥裝置中,上述移動驅動部於上述抽吸機構開始經由上述排氣口來抽吸上述收容空間之環境氣體後,使上述基板自上述第1基板位置朝上述第2基板位置移動。 In the fifth aspect, in the reduced pressure drying device of the fourth aspect, the moving drive unit causes the substrate to be removed from the first The substrate position moves toward the above-mentioned second substrate position.

第6態樣係於第1態樣至第5態樣之任一態樣之減壓乾燥裝置中,上述第1構件被設置於上述第2構件與上述排氣口之間。 The sixth aspect is in the reduced-pressure drying device of any one of the first aspect to the fifth aspect, and the first member is provided between the second member and the exhaust port.

第7態樣係於第6態樣之減壓乾燥裝置中,上述第1構件至少一部分位於上述凹部內。 The seventh aspect is in the reduced-pressure drying device of the sixth aspect, in which at least a part of the first member is located in the concave portion.

第8態樣係於第7態樣之減壓乾燥裝置中,上述第1構件全部位於上述凹部內。 The eighth aspect is in the reduced pressure drying device of the seventh aspect, in which all the first members are located in the recesses.

第9態樣係於第8態樣之減壓乾燥裝置中,上述端部與上述內緣部位在同一平面上。 The ninth aspect is in the reduced-pressure drying device of the eighth aspect, wherein the end portion and the inner edge portion are on the same plane.

第10態樣係於第1態樣至第9態樣之任一態樣之減壓乾燥裝置中,上述基板保持部以上述第1主表面成為在鉛直方向朝上之水平姿勢來保持上述基板,上述第1構件、上述第2構件及上述排氣口位於被保持在上述基板保持部之上述基板的上述第2主表面側。 The tenth aspect is in the reduced pressure drying device of any one of the first aspect to the ninth aspect, the substrate holding portion holds the substrate in a horizontal posture with the first main surface facing upward in the vertical direction The first member, the second member, and the exhaust port are located on the second main surface side of the substrate held by the substrate holding portion.

第11態樣係藉由減壓而使存在於具有第1主表面及第2主表面之基板之上述第1主表面上的處理液乾燥之減壓乾燥方法;其具有:第1步驟,其將上述基板搬入具有收容空間及面向該 收容空間之第1面之框體的上述收容空間;以及第2步驟,其於上述第1步驟之後,經由被設置於在上述第1面所設置之凹部之深度方向之底面的排氣口,來抽吸上述收容空間之環境氣體;上述第2步驟包含有:藉由被配置於上述收容空間中在上述深度方向上與上述排氣口重疊之位置之第1構件來變更朝向上述排氣口之氣流的方向之步驟;以及藉由被配置於上述收容空間中與上述第1構件之端部及上述凹部之內緣部雙方沿著上述深度方向隔開間隔之位置且在上述深度方向上與上述端部及上述內緣部之雙方重疊之位置之第2構件來變更朝向上述排氣口之氣流的方向之步驟。 The eleventh aspect is a reduced-pressure drying method in which the treatment liquid existing on the first major surface of a substrate having a first major surface and a second major surface is dried by reducing pressure; it has: a first step, which The above-mentioned substrate is carried into the above-mentioned storage space having a storage space and a frame body facing the first surface of the storage space; and a second step, which after the above-mentioned first step, passes through a recess provided on the above-mentioned first surface The exhaust port on the bottom surface in the depth direction sucks the ambient air in the storage space; the second step includes: being arranged in the storage space at a position overlapping the exhaust port in the depth direction The step of changing the direction of the airflow toward the exhaust port by the first member; and being spaced from both the end of the first member and the inner edge of the recess in the depth direction by being arranged in the accommodation space The step of changing the direction of the airflow toward the exhaust port by separating the second member at the position of the interval and the position overlapping with both the end portion and the inner edge portion in the depth direction.

根據第1態樣之減壓乾燥裝置,由於排氣口之上方由第1構件所覆蓋,因此在對收容空間之環境氣體進行排氣時,可妨礙第1構件上方之環境氣體朝向排氣口被直接吸入之情形。又,由於凹部之緣部分與第1構件之端部之間隙由第2構件所覆蓋,因此可妨礙第2構件上方之環境氣體被直接吸入該間隙之情形。藉由該等之作用,由於可使基板周圍之環境氣體的流速降低,因此可減輕處理液之乾燥不均的發生。 According to the reduced-pressure drying device of the first aspect, since the upper side of the exhaust port is covered by the first member, when the ambient gas in the containing space is exhausted, the ambient gas above the first member can be prevented from facing the exhaust port In the case of being directly inhaled. In addition, since the gap between the edge of the recess and the end of the first member is covered by the second member, it can prevent the ambient air above the second member from being directly sucked into the gap. With these effects, the flow rate of the ambient gas around the substrate can be reduced, thereby reducing the occurrence of uneven drying of the treatment liquid.

根據第2態樣之減壓乾燥裝置,由於利用複數個銷來支撐第2主表面,可藉此減少接觸面積,因此可抑制因支撐構件之接觸所導致處理液之乾燥不均的發生。 According to the reduced-pressure drying device of the second aspect, since the second main surface is supported by a plurality of pins, the contact area can be reduced thereby, and therefore, the occurrence of uneven drying of the treatment liquid caused by the contact of the supporting member can be suppressed.

根據第3態樣之減壓乾燥裝置,可於第1銷與第2銷之間變更朝向排氣口之氣流的方向。 According to the reduced-pressure drying device of the third aspect, the direction of the airflow toward the exhaust port can be changed between the first pin and the second pin.

根據第4態樣之減壓乾燥裝置,可使基板於離排氣口較遠之第1基板位置與靠近排氣口之第2基板位置之間移動。因 此,可對應於被排氣口吸入之環境氣體之速度來調整基板的位置。 According to the reduced-pressure drying device of the fourth aspect, the substrate can be moved between the first substrate position far away from the exhaust port and the second substrate position close to the exhaust port. Therefore, the position of the substrate can be adjusted corresponding to the speed of the ambient gas sucked in by the exhaust port.

根據第5態樣之減壓乾燥裝置,可於收容空間內之減壓開始後,立刻將基板配置於離開氣流較快之排氣口的位置,而可在排氣口附近之流速隨著減壓之進行而降低之後,使基板靠近排氣口,藉此抑制流速的影響。此外,藉由使基板靠近排氣口附近,可促進處理液之減壓乾燥。 According to the decompression drying device of the fifth aspect, immediately after the decompression in the containing space starts, the substrate can be placed in a position away from the exhaust port with a faster airflow, and the flow velocity near the exhaust port can be reduced accordingly. After the pressure is lowered, the substrate is brought close to the exhaust port, thereby suppressing the influence of the flow rate. In addition, by bringing the substrate close to the vicinity of the exhaust port, the reduced-pressure drying of the processing liquid can be promoted.

根據第6態樣之減壓乾燥裝置,第1構件被配置於較第2構件更靠近排氣口之位置。在氣流變得較大之排氣口附近,第1構件抑制環境氣體朝向排氣口直接的吸入。因此,可減低使基板之第1主表面上之處理液乾燥時氣流的影響,而可抑制處理液的乾燥不均。 According to the reduced-pressure drying device of the sixth aspect, the first member is arranged at a position closer to the exhaust port than the second member. In the vicinity of the exhaust port where the airflow becomes larger, the first member suppresses the direct inhalation of ambient air toward the exhaust port. Therefore, the influence of air flow when the processing liquid on the first main surface of the substrate is dried can be reduced, and uneven drying of the processing liquid can be suppressed.

根據第7態樣之減壓乾燥裝置,由於第1構件之至少一部分位於凹部內,因此可使第1構件露出凹部之外側的部分變小。藉此,可較大地確保收容空間內可配置基板的空間。 According to the reduced-pressure drying device of the seventh aspect, since at least a part of the first member is located in the recessed portion, the portion of the first member exposed to the outside of the recessed portion can be reduced. As a result, a large space in which the substrate can be arranged in the storage space can be ensured.

根據第8態樣之減壓乾燥裝置,由於第1構件全部位於凹部內,因此可較大地確保收容空間內可配置基板的空間。 According to the reduced-pressure drying device of the eighth aspect, since the first members are all located in the recesses, it is possible to ensure a large space in the storage space where the substrate can be arranged.

根據第9態樣之減壓乾燥裝置,由於第1構件之端部與凹部之內緣部位於同一平面上,因此於環境氣體通過第1構件之端部與凹部之內緣部之間隙時,可減輕氣流混亂之情形。 According to the vacuum drying device of the ninth aspect, since the end of the first member and the inner edge of the recess are on the same plane, when the ambient gas passes through the gap between the end of the first member and the inner edge of the recess, It can reduce the chaos of the airflow.

根據第10態樣之減壓乾燥裝置,於將基板之存在有處理液之面配置為鉛直方向之朝上之狀態下,經由排氣口吸入收容空間之環境氣體,藉此可使基板周圍之環境氣體朝向鉛直方向之下側移動。 According to the decompression drying device of the tenth aspect, when the surface of the substrate with the processing liquid is arranged in a vertical upward state, the ambient gas in the containing space is sucked through the exhaust port, thereby enabling the surrounding gas The ambient gas moves toward the lower side in the vertical direction.

根據第11態樣之減壓乾燥方法,由於排氣口之上方 由第1構件所覆蓋,因此於對收容空間之環境氣體進行排氣時,可妨礙第1構件上方之環境氣體朝向排氣口被直接吸入之情形。又,由於凹部之緣部分與第1構件之端部之間隙由第2構件所覆蓋,因此可妨礙第2構件上方之環境氣體被直接吸入該間隙之情形。藉由該等之作用,由於可使基板周圍之環境氣體的流速降低,因此可減輕處理液之乾燥不均的發生。 According to the reduced-pressure drying method of the 11th aspect, since the upper part of the exhaust port is covered by the first member, when the ambient gas in the containing space is exhausted, the ambient gas above the first member can be prevented from facing the exhaust port In the case of being directly inhaled. In addition, since the gap between the edge of the recess and the end of the first member is covered by the second member, it can prevent the ambient air above the second member from being directly sucked into the gap. With these effects, the flow rate of the ambient gas around the substrate can be reduced, thereby reducing the occurrence of uneven drying of the treatment liquid.

1、1A‧‧‧減壓乾燥裝置 1. 1A‧‧‧Decompression drying device

9‧‧‧基板 9‧‧‧Substrate

10‧‧‧腔室(框體) 10‧‧‧Chamber (frame)

10P‧‧‧開閉部 10P‧‧‧Open and close

10S‧‧‧收容空間 10S‧‧‧Containment Space

12‧‧‧凹部 12‧‧‧Concave

12a‧‧‧-X側凹部 12a‧‧‧-X side recess

12b‧‧‧+X側凹部 12b‧‧‧+X side recess

14‧‧‧排氣口 14‧‧‧Exhaust port

20‧‧‧抽吸機構 20‧‧‧Suction mechanism

30‧‧‧第1整流板(第1構件) 30‧‧‧The first rectifier plate (the first member)

30a‧‧‧-X側第1整流板 30a‧‧‧-X side first rectifier plate

30b‧‧‧+X側第1整流板 30b‧‧‧+X side 1st rectifier plate

32a‧‧‧-X側端部 32a‧‧‧-X side end

32b‧‧‧+X側端部 32b‧‧‧+X side end

34a‧‧‧-X側間隙 34a‧‧‧-X side clearance

34b‧‧‧+X側間隙 34b‧‧‧+X side clearance

40、40a、40b、40c、40d‧‧‧第2整流板(第2構件) 40, 40a, 40b, 40c, 40d‧‧‧Second rectifier plate (second member)

50‧‧‧升降機構 50‧‧‧Lifting mechanism

52、52a、52b‧‧‧支撐部(基板保持部) 52, 52a, 52b‧‧‧Supporting part (substrate holding part)

54‧‧‧升降驅動部(移動驅動部) 54‧‧‧Lift drive unit (mobile drive unit)

70‧‧‧控制部 70‧‧‧Control Department

80‧‧‧指部 80‧‧‧Finger

90‧‧‧上表面 90‧‧‧Upper surface

100‧‧‧底面(第1面) 100‧‧‧Bottom (1st side)

102‧‧‧外表面 102‧‧‧Outer surface

104‧‧‧壁面 104‧‧‧Wall

120‧‧‧底面 120‧‧‧Bottom

122‧‧‧內壁面 122‧‧‧Inner wall

124a‧‧‧-X側緣部(內緣部) 124a‧‧‧-X side edge (inner edge)

124b‧‧‧+X側緣部(內緣部) 124b‧‧‧+X side edge (inner edge)

520‧‧‧升降板 520‧‧‧Lift board

522‧‧‧銷 522‧‧‧pin

L1‧‧‧上位置(第1基板位置) L1‧‧‧Up position (1st board position)

L2‧‧‧下位置(第2基板位置) L2‧‧‧Lower position (2nd board position)

圖1係顯示自鉛直方向之上側觀察實施形態之減壓乾燥裝置1之腔室10內部之情況的概略俯視圖。 Fig. 1 is a schematic plan view showing the inside of the chamber 10 of the reduced-pressure drying apparatus 1 of the embodiment viewed from the upper side in the vertical direction.

圖2係顯示自鉛直方向之上側觀察實施形態之減壓乾燥裝置1之不含4個第2整流板40及升降機構50之腔室10內部之情況的概略俯視圖。 FIG. 2 is a schematic plan view showing the inside of the chamber 10 without the four second rectifying plates 40 and the lifting mechanism 50 of the reduced-pressure drying device 1 of the embodiment viewed from the upper side in the vertical direction.

圖3係沿著圖1之A-A線之位置之減壓乾燥裝置1的概略剖視圖。 Fig. 3 is a schematic cross-sectional view of the reduced-pressure drying device 1 along the line A-A in Fig. 1.

圖4係顯示處理對象之基板9被搬入時之減壓乾燥裝置1的概略剖視圖。 4 is a schematic cross-sectional view showing the reduced-pressure drying apparatus 1 when the substrate 9 to be processed is carried in.

圖5係顯示開始進行排氣時之減壓乾燥裝置1的概略剖視圖。 FIG. 5 is a schematic cross-sectional view showing the reduced-pressure drying device 1 when the exhaust is started.

圖6係顯示開始進行排氣後經過既定時間時之減壓乾燥裝置1的概略剖視圖。 FIG. 6 is a schematic cross-sectional view showing the reduced-pressure drying device 1 when a predetermined time has passed after the start of exhausting.

圖7係顯示使處理後之基板9朝外部搬出時之減壓乾燥裝置1的概略剖視圖。 FIG. 7 is a schematic cross-sectional view showing the reduced-pressure drying apparatus 1 when the processed substrate 9 is carried out to the outside.

圖8係顯示變形例之減壓乾燥裝置1A的圖。 FIG. 8 is a diagram showing a reduced-pressure drying device 1A of a modified example.

以下,一邊參照隨附的圖式,一邊對本發明之實施形態進行說明。再者,本實施形態所記載之構成元件僅為例示,並非用以將本發明之範圍僅限定於該等構成元件者。於圖式中,為了容易理解,存在有視需要而誇張地或簡略地圖示各部分之尺寸或數量之情形。 Hereinafter, the embodiments of the present invention will be described with reference to the accompanying drawings. In addition, the constituent elements described in this embodiment are only examples, and are not intended to limit the scope of the present invention to only these constituent elements. In the drawings, for ease of understanding, there are cases where the size or quantity of each part is illustrated exaggeratedly or briefly as needed.

除非有特別說明,否則表示相對性或絕對性之位置關係的表現(例如「朝一方向」、「沿著一方向」、「平行」、「正交」、「中心」、「同心」、「同軸」等),不僅為嚴格地表示該位置關係者,且亦為在公差或可得到相同程度之功能之範圍內相對地表示角度或距離有位移之狀態者。除非有特別說明,否則表示相等狀態之表現(例如「同一」、「相等」、「均質」等),不僅為表示定量上嚴格地相等之狀態者,且亦為表示存在有公差或可得到相同程度之功能的差之狀態者。除非有特別說明,否則表示形狀之表現(例如「四角形」或「圓筒形」等),不僅為嚴格地表示幾何學上之該等形狀者,且在可得到相同程度之功效的範圍內,亦為表示例如具有凹凸或倒角等之形狀者。「裝設」、「具有」、「具備」、「包含」或「有」1個構成元件之表現,並非為將其他構成元件之存在排除在外之排他性表現。除非有特別說明,否則所謂「~之上」,除了2個元件相接之情形,亦包含2個元件分開之情形。 Unless otherwise specified, it means the expression of relative or absolute positional relationship (such as "toward one direction", "along one direction", "parallel", "orthogonal", "center", "concentric", "coaxial" ", etc.), not only strictly expressing the positional relationship, but also expressing the state of relative displacement of the angle or distance within the range of tolerance or the same degree of function can be obtained. Unless otherwise specified, the representation of an equal state (such as "identity", "equal", "homogeneous", etc.) not only refers to a quantitatively strictly equal state, but also means that there is a tolerance or that the same can be obtained The poor state of the function of the degree. Unless otherwise specified, expressions of shapes (such as "quadrilateral" or "cylindrical", etc.) are not only those that strictly express geometrically these shapes, but also within the range where the same degree of efficacy can be obtained. It also means that, for example, it has a shape such as unevenness or chamfering. The expression of "install", "have", "have", "include" or "have" one component is not an exclusive expression excluding the existence of other components. Unless otherwise specified, the so-called "~above", in addition to the case where two components are connected, also includes the case where two components are separated.

<1.實施形態> <1. Implementation mode>

圖1係顯示自鉛直方向之上側觀察實施形態之減壓乾燥裝置1之腔室10內部之情況的概略俯視圖。圖2係顯示自鉛直方向之上側觀察實施形態之減壓乾燥裝置1之不含4個第2整流板40及升 降機構50之腔室10內部之情況的概略俯視圖。圖3係沿著圖1之A-A線之位置之減壓乾燥裝置1的概略剖視圖。 Fig. 1 is a schematic plan view showing the inside of the chamber 10 of the reduced-pressure drying apparatus 1 of the embodiment viewed from the upper side in the vertical direction. Fig. 2 is a schematic plan view showing the inside of the chamber 10 without the four second rectifying plates 40 and the lifting mechanism 50 of the reduced-pressure drying apparatus 1 of the embodiment viewed from the upper side in the vertical direction. Fig. 3 is a schematic cross-sectional view of the reduced-pressure drying device 1 along the line A-A in Fig. 1.

於各圖中,為了明確化減壓乾燥裝置1之各部分之位置關係,而標示X軸、Y軸及Z軸。在本例子中,X軸方向及Y軸方向為水平方向,而Z軸方向為鉛直方向。於各軸中,將箭頭之前端所朝向之方向設為+(正)方向,並將其相反方向設為-(負)方向。將鉛直方向之朝上設為「+Z方向」,並將朝下設為「-Z方向」。下述所說明之各部分之位置關係僅為一例,並非用以限定於該等位置關係者。 In each figure, in order to clarify the positional relationship of each part of the reduced-pressure drying apparatus 1, the X-axis, Y-axis, and Z-axis are indicated. In this example, the X-axis direction and the Y-axis direction are horizontal directions, and the Z-axis direction is a vertical direction. In each axis, set the direction of the front end of the arrow as the + (positive) direction, and set the opposite direction as the-(negative) direction. Set the vertical direction upward as "+Z direction" and downward as "-Z direction". The positional relationship of each part described below is only an example, and is not intended to be limited to these positional relationships.

減壓乾燥裝置1具備有腔室10。腔室10呈長方體狀,且為內部具有收容空間10S之框體。減壓乾燥裝置1於該收容空間10S收容基板9,進行藉由減壓使被塗布於基板9之上表面90(第1主表面)之處理液乾燥之減壓乾燥處理。 The reduced-pressure drying device 1 includes a chamber 10. The chamber 10 has a rectangular parallelepiped shape, and is a frame with a housing space 10S inside. The reduced-pressure drying device 1 accommodates the substrate 9 in the housing space 10S, and performs a reduced-pressure drying process of drying the treatment liquid coated on the upper surface 90 (first main surface) of the substrate 9 by reducing the pressure.

於腔室10之+Y側之側壁之靠近+Z側之部分設置有開閉部10P。開閉部10P形成在腔室10之外部與腔室10之收容空間10S之間用以通過基板9之開口。又,開閉部10P藉由關閉該開口將外部與收容空間10S遮斷,而使基板9無法通過。 An opening/closing part 10P is provided in a portion of the +Y side wall of the chamber 10 close to the +Z side. The opening and closing portion 10P is formed between the outside of the chamber 10 and the receiving space 10S of the chamber 10 to pass through the opening of the substrate 9. In addition, the opening and closing portion 10P closes the opening to block the outside from the housing space 10S, so that the substrate 9 cannot pass through.

腔室10具有面向收容空間10S之底面100。底面100成為水平面。於底面100設置有4個凹部12。4個凹部12包含被配置於-X側之2個-X側凹部12a、及被配置於+X側之2個+X側凹部12b。 The chamber 10 has a bottom surface 100 facing the receiving space 10S. The bottom surface 100 becomes a horizontal plane. Four recesses 12 are provided on the bottom surface 100. The four recesses 12 include two -X-side recesses 12a arranged on the -X side, and two +X-side recesses 12b arranged on the +X side.

凹部12之數量並不限定於4個,亦可任意地變更。例如,亦可僅設置1個凹部12。 The number of recesses 12 is not limited to four, and can be changed arbitrarily. For example, only one recess 12 may be provided.

以下,專注於1個凹部12來進行說明。凹部12具有 自底面100朝-Z方向凹陷之形狀。凹部12自鉛直方向之上側觀察雖呈矩形,但並非為必要。凹部12之深度方向(Z軸方向)之底面120成為水平面。凹部12具有自底面120之外周部朝鉛直方向之向上立起之內壁面122。內壁面122具有以相對於底面120垂直之方式沿著鉛直方向延伸之部分。藉由內壁面122沿著鉛直方向延伸,可將朝向排氣口14之環境氣體之流動整流成鉛直方向。 Hereinafter, description will be given focusing on one recess 12. The recess 12 has a shape recessed from the bottom surface 100 in the -Z direction. Although the recess 12 is rectangular when viewed from the upper side in the vertical direction, it is not essential. The bottom surface 120 of the depth direction (Z-axis direction) of the recess 12 becomes a horizontal plane. The recess 12 has an inner wall surface 122 that rises upward in the vertical direction from the outer peripheral portion of the bottom surface 120. The inner wall surface 122 has a portion extending in the vertical direction so as to be perpendicular to the bottom surface 120. By extending the inner wall surface 122 in the vertical direction, the flow of the ambient gas toward the exhaust port 14 can be rectified to the vertical direction.

於凹部12之底面120設置有排氣口14。亦即,減壓乾燥裝置1具有4個排氣口14。排氣口14經由凹部12而連接於收容空間10S。排氣口14被連接於抽吸機構20。抽吸機構20具有對應於來自控制部70之控制指令而動作之未圖示的真空泵。抽吸機構20依據控制指令,經由排氣口14而抽吸收容空間10S內之環境氣體,並將其朝外部排出。 An exhaust port 14 is provided on the bottom surface 120 of the recess 12. That is, the reduced-pressure drying device 1 has four exhaust ports 14. The exhaust port 14 is connected to the accommodating space 10S via the recess 12. The exhaust port 14 is connected to the suction mechanism 20. The suction mechanism 20 has a vacuum pump (not shown) that operates in response to a control command from the control unit 70. The suction mechanism 20 sucks the ambient gas in the absorption volume 10S through the exhaust port 14 according to the control command, and discharges it to the outside.

減壓乾燥裝置1具備有4個第1整流板30(第1構件)。在本例子中,分別於4個凹部12之內側各配置1個第1整流板30。4個第1整流板30包含有分別於2個-X側凹部12a之內側各配置有1個之2個-X側第1整流板30a、及分別於2個+X側凹部12b之內側各配置有1個之2個+X側第1整流板30b。 The reduced-pressure drying device 1 includes four first rectifying plates 30 (first members). In this example, one first rectification plate 30 is arranged inside each of the four recesses 12. The four first rectification plates 30 include two of the two -X-side recesses 12a each having one inside each. One -X-side first rectifying plate 30a and two +X-side first rectifying plates 30b are respectively arranged inside the two +X-side recesses 12b.

各第1整流板30被配置於收容空間10S內與排氣口14在Z軸方向上重疊之位置。亦即,對於各第1整流板30,在自鉛直方向之上側朝鉛直方向之向下(-Z方向)俯視透視第1整流板30及排氣口14之情形時,第1整流板30被配置於收容空間10S中與排氣口14重疊之位置。第1整流板30被配置在相對於排氣口14沿著Z軸方向隔開間隔之位置。第1整流板30為板狀之構件,其小於各凹部12朝深度方向觀察時之開口,且大於各排氣口14之開 口。第1整流板30以平行於水平面之姿勢被配置。亦即,於自鉛直方向之上側朝鉛直方向之向下(-Z方向)俯視透視第1整流板30、凹部12及排氣口14之情形時,第1整流板30小於凹部12之開口,且大於排氣口14之開口。再者,凹部12之開口係凹部12內之空間連接於收容空間10S中位於凹部12之上方之空間的部分,且排氣口14之開口係排氣口14內之空間連接於凹部12內之空間的部分。 Each first rectifying plate 30 is arranged at a position overlapping the exhaust port 14 in the Z-axis direction in the housing space 10S. That is, for each first rectifying plate 30, when the first rectifying plate 30 and the exhaust port 14 are seen in a plan view from the upper side in the vertical direction toward the downward (-Z direction) in the vertical direction, the first rectifying plate 30 is It is arranged at a position overlapping with the exhaust port 14 in the containing space 10S. The first rectifying plate 30 is arranged at a position spaced apart from the exhaust port 14 in the Z-axis direction. The first rectifying plate 30 is a plate-shaped member, which is smaller than the opening of each recess 12 when viewed in the depth direction and larger than the opening of each exhaust port 14. The first rectifying plate 30 is arranged in a posture parallel to the horizontal plane. That is, when the first rectifying plate 30, the recessed portion 12, and the exhaust port 14 are viewed in a plan view from the upper side in the vertical direction toward the downward (-Z direction) in the vertical direction, the first rectifying plate 30 is smaller than the opening of the recessed portion 12. It is larger than the opening of the exhaust port 14. Furthermore, the opening of the recess 12 is a part of the space in the recess 12 connected to the space above the recess 12 in the accommodating space 10S, and the opening of the exhaust port 14 is the space in the exhaust port 14 connected to the space in the recess 12 Part of the space.

各第1整流板30其整體被配置於對應之凹部12內。在本例子中,各第1整流板30之上表面與包含所對應之凹部12之端部之外表面102位在相同高度。各第1整流板30之上表面與外表面102成為齊平,而該外表面102包含有對應之凹部12之作為內緣部之底面100中圍繞各凹部12之周圍之內緣部。亦即,第1整流板30之上表面與外表面102位在同一平面上,而該外表面102包含有作為對應於該第1整流板30之凹部12之內緣部之底面100中圍繞各凹部12之周圍之內緣部。如此,藉由將第1整流板30設置於凹部12內,可使收容空間10S中可配置基板9之空間變大。又,可使收容空間10S之Z軸方向之長度尺寸變小。 The entirety of each first rectifying plate 30 is arranged in the corresponding recess 12. In this example, the upper surface of each first rectifying plate 30 and the outer surface 102 including the end of the corresponding recess 12 are located at the same height. The upper surface of each first rectifying plate 30 is flush with the outer surface 102, and the outer surface 102 includes the inner edge portion of the bottom surface 100 as the inner edge portion of the corresponding concave portion 12 surrounding the periphery of each concave portion 12. That is, the upper surface of the first rectifying plate 30 and the outer surface 102 are located on the same plane, and the outer surface 102 includes the bottom surface 100 as the inner edge portion of the recess 12 corresponding to the first rectifying plate 30. The inner edge of the periphery of the recess 12. In this way, by disposing the first rectifying plate 30 in the recess 12, the space where the substrate 9 can be arranged in the housing space 10S can be increased. In addition, the length dimension in the Z-axis direction of the storage space 10S can be reduced.

再者,第1整流板30之一部分亦可在凹部12內且較外表面102更底面120側(-Z側)。亦即,第1整流板30之一部分亦可在凹部12外且較外表面102更上側(+Z側)。如此,即便為一部分,但藉由將第1整流板30放入凹部12內,可使腔室10之Z軸方向之長度變小。 Furthermore, a part of the first rectifying plate 30 may also be inside the recess 12 and further to the bottom surface 120 side (−Z side) than the outer surface 102. That is, a part of the first rectifying plate 30 may be outside the recess 12 and above the outer surface 102 (+Z side). In this way, even if it is a part, the length of the cavity 10 in the Z-axis direction can be reduced by putting the first rectifying plate 30 in the recess 12.

第1整流板30在與凹部12之矩形之內緣部之間設置有間隙。詳細而言,於第1整流板30之-X側端部32a與凹部12 之-X側緣部124a之間設置有-X側間隙34a,而於第1整流板30之+X側端部32b與凹部12之+X側緣部124b之間設置有+X側間隙34b。-X側端部32a係位於第1整流板30之-X側之端部,-X側緣部124a係位於凹部12之-X側之緣部,+X側端部32b係位於第1整流板30之+X側之端部,而+X側緣部124b係位於凹部12之+X側之緣部。 A gap is provided between the first rectifying plate 30 and the inner edge of the rectangle of the recess 12. In detail, a -X side gap 34a is provided between the -X side end 32a of the first rectifying plate 30 and the -X side edge 124a of the recess 12, and the +X side end of the first rectifying plate 30 A +X side gap 34b is provided between 32b and the +X side edge 124b of the recess 12. The -X-side end 32a is located at the -X-side end of the first rectifying plate 30, the -X-side edge 124a is located at the -X-side edge of the recess 12, and the +X-side end 32b is located at the first rectification The +X-side end of the plate 30 and the +X-side edge 124b are located at the +X-side edge of the recess 12.

減壓乾燥裝置1具備有4個第2整流板40(第2構件)。4個第2整流板40自-X側朝向+X側,依序包含有第2整流板40a、40b、40c、40d。亦即,自-X側朝向+X側,第2整流板40a、第2整流板40b、第2整流板40c、第2整流板40d依此記載之順序所排列。該等4個第2整流板40a、40b、40c、40d分別為長方形之板狀。4個第2整流板40a、40b、40c、40d,Y軸方向之長度尺寸相同。又,2個第2整流板40a、40d,X軸方向之寬度尺寸相同,而2個第2整流板40b、40c,X軸方向之寬度尺寸相同。2個第2整流板40a、40d沿著X軸方向隔開間隔地被配置,且於該等之間配置有2個第2整流板40b、40c。2個第2整流板40b、40c亦沿著X軸方向相互隔開間隔地被配置。2個第2整流板40a、40b亦沿著X軸方向相互隔開間隔地被配置。2個第2整流板40c、40d亦沿著X軸方向相互隔開間隔地被配置。 The reduced-pressure drying device 1 includes four second rectifying plates 40 (second members). The four second rectifying plates 40 extend from the -X side to the +X side, and sequentially include the second rectifying plates 40a, 40b, 40c, and 40d. That is, from the -X side to the +X side, the second rectifying plate 40a, the second rectifying plate 40b, the second rectifying plate 40c, and the second rectifying plate 40d are arranged in the order described above. The four second rectifying plates 40a, 40b, 40c, and 40d have rectangular plate shapes, respectively. The four second rectifying plates 40a, 40b, 40c, and 40d have the same length in the Y-axis direction. In addition, the two second rectifying plates 40a and 40d have the same width in the X-axis direction, and the two second rectifying plates 40b and 40c have the same width in the X-axis direction. The two second rectifying plates 40a, 40d are arranged at an interval along the X-axis direction, and two second rectifying plates 40b, 40c are arranged between the two. The two second rectifying plates 40b and 40c are also arranged at a distance from each other along the X-axis direction. The two second rectifying plates 40a and 40b are also arranged at a distance from each other along the X-axis direction. The two second rectifying plates 40c and 40d are also arranged at a distance from each other along the X-axis direction.

第2整流板40a、40b、40c、40d之各者相對於第1整流板30之外周端部與外表面102之雙方,沿著Z軸方向隔開間隔且被設置於Z軸方向上重疊之位置。亦即,於自鉛直方向之上側朝鉛直方向之向下(-Z方向)俯視透視第2整流板40a、40b、40c、40d、第1整流板30及外表面102之情形時,第2整流板40a、40b、 40c、40d分別被配置在收容空間10S中與第1整流板30之外周端部及凹部12之內緣部之雙方重疊之位置。 Each of the second rectifying plates 40a, 40b, 40c, and 40d is arranged at intervals along the Z-axis direction with respect to both the outer peripheral end portion of the first rectifying plate 30 and the outer surface 102, and is arranged to overlap in the Z-axis direction Location. That is, when the second rectifying plate 40a, 40b, 40c, 40d, the first rectifying plate 30, and the outer surface 102 are seen through the second rectifying plate 40a, 40b, 40c, 40d, the first rectifying plate 30, and the outer surface 102 when viewed from the upper side of the vertical direction toward the downward (-Z direction) in the vertical direction The plates 40a, 40b, 40c, and 40d are respectively arranged at positions overlapping with both the outer peripheral end portion of the first rectifying plate 30 and the inner edge portion of the recess 12 in the housing space 10S.

例如,位於最-X側之第2整流板40a,於Z軸方向上與包含有2個-X側第1整流板30a之-X側端部32a、及與該等對向之2個-X側凹部12a之-X側緣部124a(內緣部)之外表面102的部分重疊。亦即,於自鉛直方向之上側朝鉛直方向之向下(-Z方向)俯視透視第2整流板40a、第1整流板30及外表面102之情形時,第2整流板40a被配置於收容空間10S中分別與2個-X側第1整流板30a之-X側端部32a、及與該等之-X側端部32a對向之2個-X側凹部12a之-X側緣部124a的雙方重疊之位置。亦即,第2整流板40a覆蓋2個-X側凹部12a之-X側間隙34a的上方。 For example, the second rectifying plate 40a located on the most -X side is opposite to the -X side end 32a including the two -X side first rectifying plates 30a in the Z-axis direction, and two opposite to the two- The -X side edge portion 124a (inner edge portion) of the X side concave portion 12a overlaps with a portion of the outer surface 102. That is, when the second rectifying plate 40a, the first rectifying plate 30, and the outer surface 102 are seen through the second rectifying plate 40a, the first rectifying plate 30, and the outer surface 102 from the upper side of the vertical direction toward the downward (-Z direction) in the vertical direction, the second rectifying plate 40a is arranged in the housing In the space 10S, the -X side edge portions 32a of the two -X side first rectifying plates 30a, and the -X side edge portions of the two -X side recesses 12a opposed to the -X side end portions 32a, respectively The position where the two sides of 124a overlap. That is, the second rectifying plate 40a covers the upper side of the -X side gap 34a of the two -X side recesses 12a.

第2整流板40b於Z軸方向上,與包含有2個-X側第1整流板30a之+X側端部32b及與該等對向之2個-X側凹部12a之+X側緣部124b(內緣部)的外表面102之部分重疊。亦即,於自鉛直方向之上側朝鉛直方向之向下(-Z方向)俯視透視第2整流板40b、第1整流板30及外表面102之情形時,第2整流板40b被配置於收容空間10S中分別與2個-X側第1整流板30a之+X側端部32b及與該等之+X側端部32b對向之2個-X側凹部12a之+X側緣部124b的雙方重疊之位置。亦即,第2整流板40b覆蓋2個-X側凹部12a之+X側間隙34b的上方。 In the Z-axis direction, the second rectifying plate 40b is connected to the +X side end 32b including the two -X side first rectifying plate 30a and the +X side edge of the two -X side recesses 12a facing the same The outer surface 102 of the portion 124b (inner edge portion) partially overlaps. That is, when the second rectifying plate 40b, the first rectifying plate 30, and the outer surface 102 are seen through the second rectifying plate 40b, the first rectifying plate 30, and the outer surface 102 from the upper side in the vertical direction toward the downward (-Z direction) in the vertical direction, the second rectifying plate 40b is arranged in the housing In the space 10S, the +X-side edge portions 32b of the two -X-side first rectifying plates 30a and the +X-side edge portions 124b of the two -X-side concave portions 12a opposed to the +X-side end portions 32b, respectively The position where the two sides overlap. That is, the second rectifying plate 40b covers the upper side of the +X-side gap 34b of the two -X-side recesses 12a.

第2整流板40c於Z軸方向上,與包含有2個+X側第1整流板30b之-X側端部32a及與該等對向之2個+X側凹部12b之-X側緣部124a(內緣部)的外表面102之部分重疊。亦即,於自鉛直方向之上側朝鉛直方向之向下(-Z方向)俯視透視第2整流板 40c、第1整流板30及外表面102之情形時,第2整流板40c被配置於收容空間10S中分別與2個+X側第1整流板30b之-X側端部32a、及與該等之-X側端部32a對向之2個+X側凹部12b之2個-X側緣部124a的雙方重疊之位置。亦即,第2整流板40c覆蓋2個+X側凹部12b之-X側間隙34a的上方。 In the Z-axis direction, the second rectifying plate 40c is connected to the -X side end 32a including the two +X-side first rectifying plates 30b and the -X side edge of the two +X-side recesses 12b facing the same The outer surface 102 of the portion 124a (inner edge portion) partially overlaps. That is, when the second rectifying plate 40c, the first rectifying plate 30, and the outer surface 102 are seen through the second rectifying plate 40c, the first rectifying plate 30, and the outer surface 102 from the upper side in the vertical direction toward the downward (-Z direction) in the vertical direction, the second rectifying plate 40c is arranged in the housing In the space 10S, the -X side ends 32a of the two +X side first rectifying plates 30b, and the two +X side recesses 12b facing the -X side ends 32a are respectively -X side The position where both sides of the edge 124a overlap. That is, the second rectifying plate 40c covers the upper side of the -X side gap 34a of the two +X side recesses 12b.

位於最+X側之第2整流板40d,於Z軸方向上與包含有2個+X側第1整流板30b之+X側端部32b及與該等對向之2個+X側凹部12b之+X側緣部124b(內緣部)的外表面102之部分重疊。亦即,於自鉛直方向之上側朝鉛直方向之向下(-Z方向)俯視透視第2整流板40d、第1整流板30及外表面102之情形時,第2整流板40d被配置於收容空間10S中分別與2個+X側第1整流板30b之+X側端部32b、及與該等之+X側端部32b對向之2個+X側凹部12b之+X側緣部124b的雙方重疊之位置。亦即,第2整流板40d覆蓋2個+X側凹部12b之+X側間隙34b的上方。 The second rectifying plate 40d located on the most +X side, in the Z-axis direction, includes two +X-side end portions 32b of the +X-side first rectifying plate 30b, and two +X-side recesses facing the same Part of the outer surface 102 of the +X side edge portion 124b (inner edge portion) of 12b overlaps. That is, when looking through the second rectifying plate 40d, the first rectifying plate 30, and the outer surface 102 from the upper side in the vertical direction toward the downward (-Z direction) in the vertical direction, the second rectifying plate 40d is arranged in the housing In the space 10S, the +X-side end portions 32b of the two +X-side first rectifying plates 30b, and the +X-side edge portions of the two +X-side recesses 12b opposed to the +X-side end portions 32b, respectively The position where the two sides of 124b overlap. That is, the second rectifying plate 40d covers the upper side of the +X-side gap 34b of the two +X-side recesses 12b.

升降機構50在複數個第2整流板40之上方支撐基板9,並且使基板9沿著鉛直方向升降移動。升降機構50包含有6個支撐部52、及升降驅動部54。 The elevating mechanism 50 supports the substrate 9 above the plurality of second rectifying plates 40 and moves the substrate 9 up and down in the vertical direction. The lifting mechanism 50 includes six supporting parts 52 and a lifting driving part 54.

6個支撐部52相對於第1整流板30被配置在與排氣口14相反側。亦即,6個支撐部52與排氣口14被配置於隔著第1整流板30相互地為相反側之位置。6個支撐部52包含有3個支撐部52a及3個支撐部52b。支撐部52a、52b分別具備有沿著Y軸方向延伸之升降板520、及於1個升降板520上沿著Y軸方向隔開間隔地被配置之複數個銷522。在本例子中,於收容空間10S中靠-X側之位置、X軸方向中央之位置、靠+X側之位置,分別配置有 支撐部52a、52b各1個。自鉛直方向之上側觀察,於第2整流板40a與第2整流板40b之間、第2整流板40b與第2整流板40c之間、及第2整流板40c與第2整流板40d之間分別配置有支撐部52a、52b各1個。基板9藉由被支撐於支撐部52a或支撐部52b所具備之複數個銷522之上端部,而相對於第1整流板30及第2整流板40被保持在與排氣口14相反側之位置。亦即,基板9以第1整流板30及第2整流板40為基準,而被保持在與排氣口14相反側之位置。 The six support portions 52 are arranged on the side opposite to the exhaust port 14 with respect to the first rectifying plate 30. That is, the six support portions 52 and the exhaust port 14 are arranged at positions on opposite sides of each other with the first rectifying plate 30 interposed therebetween. The six support portions 52 include three support portions 52a and three support portions 52b. The support portions 52a and 52b are respectively provided with a lift plate 520 extending in the Y-axis direction, and a plurality of pins 522 arranged on one lift plate 520 at intervals in the Y-axis direction. In this example, one support part 52a, one support part 52b is arranged at a position near the -X side, a position near the center of the X axis direction, and a position near the +X side in the storage space 10S. Viewed from the upper side in the vertical direction, between the second rectifying plate 40a and the second rectifying plate 40b, between the second rectifying plate 40b and the second rectifying plate 40c, and between the second rectifying plate 40c and the second rectifying plate 40d One support part 52a, one support part 52b is respectively arrange|positioned. The substrate 9 is supported on the upper ends of the plurality of pins 522 provided in the support portion 52a or the support portion 52b, and is held on the side opposite to the exhaust port 14 with respect to the first rectifying plate 30 and the second rectifying plate 40 Location. That is, the substrate 9 is held at a position opposite to the exhaust port 14 with the first rectifying plate 30 and the second rectifying plate 40 as a reference.

升降驅動部54被連接於3個支撐部52a及3個支撐部52b之各者的升降板520,而使該等個別地沿著鉛直方向升降。作為移動驅動部之升降驅動部54之驅動力,亦可經由貫通腔室10之底面100而被連結於升降板520之下表面之棒狀構件(未圖示)被傳遞。藉由升降驅動部54之驅動力,支撐部52a及支撐部52b分別沿著鉛直方向升降。再者,6個支撐部52中2個以上之支撐部52,亦可以一體進行升降之方式被直接連結。例如,亦可將3個支撐部52a相互地連結而使其一體升降。又,亦可使3個支撐部52b相互地連結而一體地升降。於如此之情形時,由於可減少升降驅動部54之動作軸(棒狀構件),因此可簡化升降驅動部54之構成。 The lift drive part 54 is connected to the lift plate 520 of each of the three support parts 52a and the three support parts 52b, and individually lifts these up and down in a vertical direction. The driving force of the elevating driving part 54 as a moving driving part may also be transmitted through a rod-shaped member (not shown) that penetrates the bottom surface 100 of the chamber 10 and is connected to the lower surface of the elevating plate 520. The support portion 52a and the support portion 52b are respectively raised and lowered in the vertical direction by the driving force of the raising and lowering driving portion 54. Furthermore, two or more support portions 52 among the six support portions 52 can also be directly connected in a manner of integral lifting and lowering. For example, the three support portions 52a may be connected to each other to be raised and lowered integrally. In addition, the three support portions 52b may be connected to each other and raised and lowered integrally. In such a case, since the movement axis (rod-shaped member) of the up-and-down drive portion 54 can be reduced, the structure of the up-and-down drive portion 54 can be simplified.

支撐部52a所具備之複數個銷522,以與支撐部52b所具備之複數個銷522在Y軸方向之位置上不同之方式被配置。其原因係為了與各種大小之基板9對應。再者,各銷522之位置並不限定於此,亦可任意地設定。 The plurality of pins 522 included in the support portion 52a are arranged in a manner different from the positions of the plurality of pins 522 included in the support portion 52b in the Y-axis direction. The reason for this is to correspond to substrates 9 of various sizes. In addition, the position of each pin 522 is not limited to this, and can be set arbitrarily.

例如,靠-X側之支撐部52a所具備之複數個銷522,係沿著Y軸方向被排列之複數個第1銷之一例。X軸方向中央之支 撐部52a所具備之複數個銷522,係相對於靠-X側之支撐部52a所具備之複數個銷522沿著X軸方向隔開間隔地沿著Y軸方向被排列之複數個第2銷之一例。第2整流板40b係被配置於該等複數個第1銷與複數個第2銷之間之第2構件之一例。 For example, the plural pins 522 provided in the support portion 52a on the -X side are an example of plural first pins arranged along the Y-axis direction. The plurality of pins 522 provided in the support portion 52a in the center of the X-axis direction are arranged along the Y-axis direction at intervals along the X-axis direction with respect to the plurality of pins 522 provided in the support portion 52a on the -X side An example of the plural second pins. The second rectifying plate 40b is an example of the second member arranged between the plurality of first pins and the plurality of second pins.

又,X軸方向中央之支撐部52a所具備之複數個銷522係複數個第1銷之一例,且為靠+X側之支撐部52a所具備之複數個銷522係複數個第2銷之一例。第2整流板40c係被配置於該等複數個第1銷與複數個第2銷之間的第2構件之一例。 In addition, the plurality of pins 522 provided in the support portion 52a in the center of the X-axis direction is an example of a plurality of first pins, and the plurality of pins 522 provided in the support portion 52a on the +X side is an example of the plurality of second pins. One case. The second rectifying plate 40c is an example of the second member arranged between the plurality of first pins and the plurality of second pins.

減壓乾燥裝置1具備有控制部70。控制部70亦可被構成為具備有進行各種運算處理之CPU(Central Processing Unit;中央處理單元)、作為儲存基本程式之讀取專用之記憶體的ROM(Read-Only Memory;唯讀記憶體)、作為儲存各種資訊之讀寫自如之記憶體的RAM(Random Access Memory;隨機存取記憶體)之一般電腦。控制部70亦可具備有儲存控制用應用軟體(程式)或各種資料等之輔助儲存裝置。藉由CPU隨著控制用應用軟體而動作,可實現各種功能。控制部70可進行通信地被連接於開閉部10P、抽吸機構20及升降驅動部54,並對該等發送控制指令,藉此控制該等之動作。 The reduced-pressure drying device 1 includes a control unit 70. The control unit 70 may also be configured with a CPU (Central Processing Unit) for performing various arithmetic processing, and a ROM (Read-Only Memory) as a memory dedicated to reading for storing basic programs. , RAM (Random Access Memory; random access memory) is a general computer that stores all kinds of information that can be read and written freely. The control unit 70 may also be provided with an auxiliary storage device for storing control application software (program) or various data. Various functions can be realized by the CPU operating with the control application software. The control unit 70 is communicably connected to the opening/closing unit 10P, the suction mechanism 20, and the lifting drive unit 54, and sends control commands to these, thereby controlling these operations.

<動作說明> <Action description>

對上述構成之減壓乾燥裝置1之減壓乾燥處理的動作進行說明。再者,除非有特別說明,否則減壓乾燥裝置1之動作係對應於來自控制部70之控制指令而執行者。 The operation of the reduced-pressure drying process of the reduced-pressure drying device 1 having the above-mentioned configuration will be described. Furthermore, unless otherwise specified, the operation of the reduced-pressure drying device 1 is executed in accordance with the control command from the control unit 70.

圖4係顯示處理對象之基板9被搬入時之減壓乾燥裝 置1的概略側視圖。減壓乾燥處理包含有將處理對象之基板9(於上表面90塗布有處理液之基板9)自外部搬入腔室10之收容空間10S之搬入步驟S1。 Fig. 4 is a schematic side view showing the reduced-pressure drying apparatus 1 when the substrate 9 to be processed is carried in. The reduced-pressure drying process includes a carrying-in step S1 of carrying the substrate 9 to be processed (the substrate 9 coated with the processing liquid on the upper surface 90) into the housing space 10S of the chamber 10 from the outside.

在搬入步驟S1中,控制部70將與處理對象之基板9的支撐對應之複數個支撐部52(在圖4所示之例子中為3個支撐部52a),配置於既定之鉛直位置。既定之鉛直位置係鉛直方向上之既定位置。其後,控制部70將開閉部10P開啟。通過被開放之開閉部10P,未圖示之搬送裝置將基板9搬入收容空間10S。然後,未圖示之搬送裝置將基板9載置於該複數個支撐部52之各銷522上。藉此,成為基板9被保持在上位置L1(第1基板位置)之狀態。 In the carry-in step S1, the control unit 70 arranges a plurality of support portions 52 (three support portions 52a in the example shown in FIG. 4) corresponding to the support of the substrate 9 to be processed in a predetermined vertical position. The predetermined vertical position is the predetermined position in the vertical direction. After that, the control unit 70 opens the opening and closing unit 10P. The substrate 9 is carried into the storage space 10S by a transport device (not shown) through the opened opening and closing portion 10P. Then, a conveying device not shown places the substrate 9 on each pin 522 of the plurality of support portions 52. As a result, the substrate 9 is held at the upper position L1 (first substrate position).

搬送裝置例如可具備有支撐基板9之下表面之沿著Y軸方向延伸之複數個指部80。複數個指部80可包含有進入被配置在靠-X側位置之支撐部52b及被配置在中央位置之支撐部52a之間的1個以上之指部80、及可進入被配置在中央位置之支撐部52b與配置在+X側位置之支撐部52a之間的位置之1個以上之指部80(參照圖4)。使支撐基板9之各指部80經由開閉部10P而進入收容空間10S,其後,使各指部80在對應之各支撐部52間朝下方移動。藉此,基板9在各指部80與各支撐部52不會產生干涉之狀態下被交接至各支撐部52。 The conveying device may include, for example, a plurality of fingers 80 extending in the Y-axis direction that support the lower surface of the substrate 9. The plurality of fingers 80 may include one or more fingers 80 that enter between the support part 52b arranged at the side of -X and the support part 52a arranged at the central position, and the finger part 80 that can enter the support part 52a arranged at the central position. One or more fingers 80 (refer to FIG. 4) at a position between the support portion 52b and the support portion 52a arranged at the +X side position. Each finger 80 of the support substrate 9 is made to enter the accommodating space 10S through the opening and closing portion 10P, and thereafter, each finger 80 is moved downward between the corresponding support portions 52. Thereby, the substrate 9 is transferred to each support portion 52 in a state where each finger 80 and each support portion 52 do not interfere.

圖5係顯示開始進行排氣時之減壓乾燥裝置1的概略側視圖。若搬入步驟S1結束,便進行排氣步驟S2。在排氣步驟S2中,藉由控制部70使抽吸機構20作動,而將收容空間10S之環境氣體自複數個排氣口14排出。 Fig. 5 is a schematic side view showing the reduced-pressure drying device 1 when the exhaust is started. When the carrying-in step S1 ends, the exhaust step S2 is performed. In the exhaust step S2, the control unit 70 activates the suction mechanism 20 to exhaust the ambient gas in the storage space 10S from the plurality of exhaust ports 14.

如圖5所示,收容空間10S之環境氣體朝向排氣口 14移動。此處,收容空間10S之環境氣體之朝向排氣口14移動的方向,係由第2整流板40a~40d所變更。詳細而言,第2整流板40a、40b、40c、40d上之環境氣體之行進方向,係藉由作為水平面之該等之上表面而被變更為朝向該等之端部的水平方向。然後,環境氣體向下通過第2整流板40a與第2整流板40b之間隙、第2整流板40b與第2整流板40c之間隙、第2整流板40c與第2整流板40d之間隙、及包圍收容空間10S四邊之壁面104與第2整流板40a、40b、40c、40d各者之端部之間隙,而朝第2整流板40a、40b、40c、40d之下方移動。 As shown in FIG. 5, the ambient gas in the containing space 10S moves toward the exhaust port 14. Here, the direction in which the ambient gas in the storage space 10S moves toward the exhaust port 14 is changed by the second rectifying plates 40a-40d. In detail, the traveling direction of the ambient gas on the second rectifying plates 40a, 40b, 40c, and 40d is changed to the horizontal direction toward the ends by the upper surfaces as horizontal planes. Then, the ambient gas passes downward through the gap between the second rectifying plate 40a and the second rectifying plate 40b, the gap between the second rectifying plate 40b and the second rectifying plate 40c, the gap between the second rectifying plate 40c and the second rectifying plate 40d, and The gaps between the walls 104 on the four sides of the containing space 10S and the ends of the second rectifying plates 40a, 40b, 40c, and 40d move downwards of the second rectifying plates 40a, 40b, 40c, and 40d.

又,環境氣體之朝向排氣口14移動的方向,係由複數個第1整流板30所變更。詳細而言,朝向第2整流板40a、40b、40c、40d之下方移動之環境氣體的行進方向,係藉由作為水平面之複數個第1整流板30(-X側第1整流板30a及+X側第1整流板30b)之上表面而被變更為朝向該等複數個第1整流板30之端部(包含-X側端部32a及+X側端部32b)的水平方向。又,朝向第2整流板40a、40b、40c、40d之下方移動之環境氣體的行進方向,係藉由作為水平面之底面100(外表面102)而被變更為朝向作為該底面100(外表面102)之端部之凹部12之內緣部的水平方向。其後,環境氣體於凹部12之內緣部(包含-X側緣部124a及+X側緣部124b)與第1整流板30之周端部之間隙(包含-X側間隙34a及+X側間隙34b)向下移動,藉此進入各凹部12內。然後,經由各凹部12內之排氣口14而朝外部被排出。 In addition, the direction in which the ambient gas moves toward the exhaust port 14 is changed by the plurality of first rectifying plates 30. In detail, the traveling direction of the ambient gas moving below the second rectifying plates 40a, 40b, 40c, 40d is determined by the plurality of first rectifying plates 30 (-X side first rectifying plates 30a and + The upper surface of the X-side first rectifying plate 30b) is changed to a horizontal direction toward the ends (including the -X-side end 32a and the +X-side end 32b) of the plurality of first rectifying plates 30. In addition, the traveling direction of the ambient gas moving below the second rectifying plates 40a, 40b, 40c, 40d is changed to the direction of the bottom surface 100 (outer surface 102) as the bottom surface 100 (outer surface 102) as a horizontal plane. ) Is the horizontal direction of the inner edge of the recess 12 at the end. Thereafter, the ambient gas flows in the gap between the inner edge portion of the recess 12 (including the -X side edge portion 124a and the +X side edge portion 124b) and the peripheral end of the first rectifying plate 30 (including the -X side gap 34a and +X). The side gap 34b) moves downward, thereby entering each recess 12. Then, it is discharged to the outside through the exhaust port 14 in each recess 12.

排氣步驟S2於一開始後,由於在收容空間10S便存在大量之環境氣體,因此環境氣體之流速會在排氣口14附近變大。 在本實施形態中,該排氣步驟S2於一開始後,便將基板9配置在離開如此流速變快之排氣口14附近之第1基板位置L1,可藉此抑制被塗布於上表面90之處理液之表面混亂、突沸(bumping)之情形。藉此,可減輕處理液中乾燥不均的發生。 After the exhaust step S2 is started, since there is a large amount of ambient gas in the containing space 10S, the flow velocity of the ambient gas will increase near the exhaust port 14. In the present embodiment, after the exhaust step S2 is started, the substrate 9 is arranged at the first substrate position L1 away from the vicinity of the exhaust port 14 whose flow velocity becomes so fast, thereby preventing the coating on the upper surface 90 from being applied. The surface of the treatment liquid is chaotic and bumping. Thereby, the occurrence of uneven drying in the treatment liquid can be reduced.

圖6係顯示開始進行排氣後經過既定時間時之減壓乾燥裝置1的概略側視圖。於排氣步驟S2之間,進行下降步驟S3。在下降步驟S3中,控制部70於開始進行排氣後經過既定時間(第1既定時間)之後,使複數個支撐部52下降。藉此,基板9自上位置L1移動至下位置L2(第2基板位置)。下位置L2係較上位置L1更鉛直方向之下側,且靠近排氣口14之位置。 Fig. 6 is a schematic side view showing the reduced-pressure drying device 1 when a predetermined time has passed after the start of exhausting. During the exhaust step S2, the descending step S3 is performed. In the lowering step S3, the control unit 70 lowers the plurality of support portions 52 after a predetermined time (first predetermined time) has elapsed after the start of exhaust. Thereby, the board|substrate 9 moves from the upper position L1 to the lower position L2 (2nd board|substrate position). The lower position L2 is a position closer to the exhaust port 14 on the lower side in the vertical direction than the upper position L1.

下位置L2由於較上位置L1更靠近排氣口14,因此環境氣體相對地稀薄,氣壓較低。因此,藉由將基板9配置於下位置L2,可有效率地使基板9之處理液乾燥。此處,即便將基板9配置在下位置L2,由於基板9周圍之環境氣體之流速較小,因此引起處理液表面之混亂或處理液之突沸之可能性較低。其原因係在開始排氣後已經過第1既定時間。 Since the lower position L2 is closer to the exhaust port 14 than the upper position L1, the ambient gas is relatively lean and the gas pressure is lower. Therefore, by arranging the substrate 9 in the lower position L2, the processing liquid of the substrate 9 can be efficiently dried. Here, even if the substrate 9 is arranged at the lower position L2, since the flow velocity of the ambient gas around the substrate 9 is small, the possibility of causing disorder on the surface of the processing liquid or bumping of the processing liquid is low. The reason is that the first predetermined time has passed since the start of exhaust.

圖7係顯示使處理後之基板9搬出外部時之減壓乾燥裝置1的概略側視圖。若排氣步驟S3結束,便進行搬出步驟S4。在搬出步驟S4中,控制部70於開始進行排氣後經過既定時間(第2既定時間)之後,使排氣停止。藉此,殘存於收容空間10S之環境氣體之流動停止。然後,藉由進行收容空間10S之大氣開放,使收容空間10S內之氣壓恢復。收容空間10S之大氣開放既可經由排氣口14來進行,或者,亦可經由未圖示之吸氣口來進行。 FIG. 7 is a schematic side view showing the reduced-pressure drying apparatus 1 when the processed substrate 9 is carried out to the outside. When the exhaust step S3 ends, the unloading step S4 is performed. In the unloading step S4, the control unit 70 stops the exhaust after a predetermined time (the second predetermined time) has elapsed after starting the exhaust. Thereby, the flow of the ambient gas remaining in the containing space 10S is stopped. Then, by opening the atmosphere of the containing space 10S, the air pressure in the containing space 10S is restored. The opening to the atmosphere of the storage space 10S may be performed through the exhaust port 14, or may be performed through an unshown suction port.

在搬出步驟S4中,藉由控制部70使支撐基板9之複 數個支撐部52上升,而使基板9自下位置L2移動至上位置L1。再者,收容空間10S之大氣開放亦可於使基板9自下位置L2移動至上位置L1後、或者在使基板9自下位置L2朝向上位置L1移動之期間內進行。 In the unloading step S4, the control section 70 raises the plurality of support sections 52 supporting the substrate 9 to move the substrate 9 from the lower position L2 to the upper position L1. Furthermore, the opening of the storage space 10S to the atmosphere may be performed after the substrate 9 is moved from the lower position L2 to the upper position L1, or during the period during which the substrate 9 is moved from the lower position L2 to the upper position L1.

又,若控制部70打開開閉部10P,未圖示之搬送裝置經由被開放之開閉部10P而接取被支撐在上位置L1之基板9,並將該基板9自收容空間10S搬出。 In addition, when the control unit 70 opens the opening and closing portion 10P, a transport device not shown receives the substrate 9 supported at the upper position L1 via the opened opening and closing portion 10P, and carries the substrate 9 out of the storage space 10S.

如圖5及圖6所示,在減壓乾燥裝置1中,在作為被設置於腔室10之底面100之挖掘部的凹部12設置有排氣口14。因此,凹部12之開口由於較排氣口14大,因此可使排氣口14之外觀上的開口面積變大。藉此,可於排氣步驟S2中,使環境氣體朝向排氣口14之流速降低。 As shown in FIGS. 5 and 6, in the reduced-pressure drying device 1, an exhaust port 14 is provided in a recessed portion 12 that is an excavation portion provided on the bottom surface 100 of the chamber 10. Therefore, since the opening of the recessed portion 12 is larger than that of the exhaust port 14, the external opening area of the exhaust port 14 can be increased. Thereby, in the exhaust step S2, the flow velocity of the ambient gas toward the exhaust port 14 can be reduced.

如圖5及圖6所示,在減壓乾燥裝置1中,利用第1整流板30來覆蓋排氣口14之上方。藉由該第1整流板30,可妨礙較收容空間10S之第1整流板30更上方之環境氣體朝向排氣口14被直接吸入之情形。由於環境氣體自第1整流板30之周圍朝第1整流板30之下方被吸入,因此可使自基板9所觀察之環境氣體之吸入口在外觀上擴大,並且使其分散。藉此,可降低基板9之周圍之環境氣體的流速。 As shown in FIGS. 5 and 6, in the reduced-pressure drying device 1, the first rectifying plate 30 covers the upper side of the exhaust port 14. The first rectifying plate 30 can prevent the ambient air above the first rectifying plate 30 of the accommodating space 10S from being directly sucked into the exhaust port 14. Since the ambient gas is sucked in from the periphery of the first rectifying plate 30 to below the first rectifying plate 30, the suction port of the ambient gas viewed from the substrate 9 can be enlarged and dispersed in appearance. In this way, the flow rate of the ambient gas around the substrate 9 can be reduced.

如圖5及圖6所示,在減壓乾燥裝置1中,利用第2整流板40(第2整流板40a、40b、40c、40d)來覆蓋凹部12之內緣部與第1整流板30之端部之間隙(-X側間隙34a及+X側間隙34b)的上方。藉此,可妨礙第2整流板40正上方之環境氣體被直接吸入凹部12與第1整流板30之間隙之情形。由於環境氣體自第2整流板40之周圍被吸入第2整流板40之下方,因此可使自基板9所觀察之環境氣體之吸入口在外觀上擴大,並且可使其分散。藉此,可降低基板9周圍之環境氣體的流速。 As shown in Figures 5 and 6, in the reduced-pressure drying device 1, the second rectifying plate 40 (second rectifying plates 40a, 40b, 40c, 40d) is used to cover the inner edge of the recess 12 and the first rectifying plate 30 Above the end of the gap (-X side gap 34a and +X side gap 34b). This prevents the ambient air directly above the second rectifying plate 40 from being directly sucked into the gap between the recess 12 and the first rectifying plate 30. Since the ambient gas is sucked under the second rectifying plate 40 from the periphery of the second rectifying plate 40, the suction port of the ambient gas viewed from the substrate 9 can be enlarged in appearance and can be dispersed. In this way, the flow rate of the ambient gas around the substrate 9 can be reduced.

如圖5及圖6所示,第2整流板40與第1整流板30之間隙、第2整流板40與底面100(外表面102)之間隙、及第1整流板30與底面120之間隙,分別沿著水平方向擴展。因此,藉由收容空間10S之環境氣體在到達被設於鉛直方向之下側之排氣口14之前通過該等間隙,氣流的方向朝鉛直方向與水平方向地被變更為鋸齒狀。於該情形時,相較於未設置第1整流板30及第2整流板40時,可使環境氣體流動之通路的總距離變長。藉此,可謀求環境氣體之流速的降低。 As shown in Figures 5 and 6, the gap between the second rectifying plate 40 and the first rectifying plate 30, the gap between the second rectifying plate 40 and the bottom surface 100 (outer surface 102), and the gap between the first rectifying plate 30 and the bottom surface 120 , Respectively extend along the horizontal direction. Therefore, as the ambient gas in the accommodating space 10S passes through the gaps before reaching the exhaust port 14 provided on the lower side in the vertical direction, the direction of the air flow is changed into a zigzag shape in the vertical direction and the horizontal direction. In this case, compared to the case where the first rectifying plate 30 and the second rectifying plate 40 are not provided, the total distance of the passage through which the ambient gas flows can be made longer. Thereby, the flow velocity of the ambient gas can be reduced.

藉由將第1整流板30、第2整流板40設為平坦之板狀,可抑制氣流在該等之表面上混亂之情形。又,藉由將腔室10之底面100(外表面102)及凹部12之底面120亦設為平面,可抑制氣流在該等之面上混亂之情形。 By making the first rectifying plate 30 and the second rectifying plate 40 into a flat plate shape, it is possible to suppress the chaos of the air flow on these surfaces. In addition, by setting the bottom surface 100 (outer surface 102) of the chamber 10 and the bottom surface 120 of the recess 12 as flat surfaces, it is possible to prevent the airflow from being chaotic on these surfaces.

<2.變形例> <2. Modifications>

以上,雖已對實施形態進行說明,但本發明並非被限定於如上所述者,而可進行各種變形。 Although the embodiments have been described above, the present invention is not limited to those described above, and various modifications can be made.

在上述實施形態中,排氣口14雖被設置於凹部12之深度方向的底面120,但亦可被設置於凹部12之內壁面122。 In the above embodiment, the exhaust port 14 is provided on the bottom surface 120 of the depth direction of the recess 12, but it may be provided on the inner wall surface 122 of the recess 12.

在上述實施形態中,排氣口14被設置於在鉛直方向之下側之底面100所設置的凹部12內。排氣口14亦可面向收容空間10S而被設置於自底面100之外周端部朝鉛直方向之向上立起的壁面104。 In the above-mentioned embodiment, the exhaust port 14 is provided in the recess 12 provided in the bottom surface 100 on the lower side in the vertical direction. The exhaust port 14 may also be provided on the wall surface 104 that rises in the vertical direction from the outer peripheral end of the bottom surface 100 facing the accommodating space 10S.

圖8係顯示變形例之減壓乾燥裝置1A的圖。在上述實施形態中,於凹部12之內部配置有第1整流板30。亦可如圖8所示之減壓乾燥裝置1A般,將第1整流板30設置於凹部12之上方(凹部12之外部)。又,亦可如減壓乾燥裝置1A般,將第2整流板40(第2整流板40a、40b、40c、40d)配置於較第1整流板30更下側(靠近排氣口14之側)。第2整流板40被配置於Z軸方向上與第1整流板30之端部(-X側端部32a或+X側端部32b)及凹部12之內緣部(-X側緣部124a或+X側緣部124b)重疊的位置。亦即,於自鉛直方向之上側朝鉛直方向之向下(-Z方向)俯視透視第1整流板30、第2整流板40及凹部12之情形時,第2整流板40被配置於收容空間10S中與第1整流板30之外周端部及凹部12之內緣部雙方重疊的位置。藉由如此地設置第2整流板40,亦可妨礙環境氣體被吸入第1整流板30與凹部12之間隙之情形。 FIG. 8 is a diagram showing a reduced-pressure drying device 1A of a modified example. In the above-mentioned embodiment, the first rectifying plate 30 is arranged inside the recess 12. Like the reduced-pressure drying device 1A shown in FIG. 8, the first rectifying plate 30 may be provided above the recess 12 (outside the recess 12). Also, like the reduced-pressure drying device 1A, the second rectifying plate 40 (second rectifying plates 40a, 40b, 40c, 40d) may be arranged on the lower side (closer to the exhaust port 14) than the first rectifying plate 30 ). The second rectifying plate 40 is arranged in the Z-axis direction and the end of the first rectifying plate 30 (-X side end 32a or +X side end 32b) and the inner edge of the recess 12 (-X side edge 124a) Or the position where the +X side edge 124b) overlaps. That is, when the first rectifying plate 30, the second rectifying plate 40, and the recess 12 are seen through the first rectifying plate 30, the second rectifying plate 40, and the recess 12 in a plan view from the upper side in the vertical direction toward the downward (-Z direction) in the vertical direction, the second rectifying plate 40 is arranged in the accommodating space A position overlapping with both the outer peripheral end portion of the first rectifying plate 30 and the inner edge portion of the recess 12 in 10S. By providing the second rectifying plate 40 in this way, it is also possible to prevent ambient air from being sucked into the gap between the first rectifying plate 30 and the recess 12.

雖已詳細地說明本發明,但上述說明之所有態樣僅為例示,本發明並非被限定於該等態樣者。未例示之無數個變形例,可被理解為不超出本發明之範圍即可思及者。上述各實施形態及各變形例所說明之各構成,只要不相互矛盾即可適當地加以組合、或予以省略。 Although the present invention has been described in detail, all the aspects described above are only examples, and the present invention is not limited to these aspects. The countless modified examples that are not illustrated can be understood as those that can be thought of without departing from the scope of the present invention. The configurations described in the above embodiments and modifications may be appropriately combined or omitted as long as they do not contradict each other.

1‧‧‧減壓乾燥裝置 1‧‧‧Decompression drying device

9‧‧‧基板 9‧‧‧Substrate

10‧‧‧腔室(框體) 10‧‧‧Chamber (frame)

10P‧‧‧開閉部 10P‧‧‧Open and close

10S‧‧‧收容空間 10S‧‧‧Containment Space

12‧‧‧凹部 12‧‧‧Concave

12a‧‧‧-X側凹部 12a‧‧‧-X side recess

12b‧‧‧+X側凹部 12b‧‧‧+X side recess

14‧‧‧排氣口 14‧‧‧Exhaust port

20‧‧‧抽吸機構 20‧‧‧Suction mechanism

30a‧‧‧-X側第1整流板 30a‧‧‧-X side first rectifier plate

30b‧‧‧+X側第1整流板 30b‧‧‧+X side 1st rectifier plate

32a‧‧‧-X側端部 32a‧‧‧-X side end

32b‧‧‧+X側端部 32b‧‧‧+X side end

34a‧‧‧-X側間隙 34a‧‧‧-X side clearance

34b‧‧‧+X側間隙 34b‧‧‧+X side clearance

40a、40b、40c、40d‧‧‧第2整流板(第2構件) 40a, 40b, 40c, 40d‧‧‧Second rectifier plate (second member)

50‧‧‧升降機構 50‧‧‧Lifting mechanism

52a、52b‧‧‧支撐部(基板保持部) 52a, 52b‧‧‧Supporting part (substrate holding part)

54‧‧‧升降驅動部(移動驅動部) 54‧‧‧Lift drive unit (mobile drive unit)

70‧‧‧控制部 70‧‧‧Control Department

90‧‧‧上表面 90‧‧‧Upper surface

100‧‧‧底面(第1面) 100‧‧‧Bottom (1st side)

102‧‧‧外表面 102‧‧‧Outer surface

104‧‧‧壁面 104‧‧‧Wall

120‧‧‧底面 120‧‧‧Bottom

122‧‧‧內壁面 122‧‧‧Inner wall

124a‧‧‧-X側緣部(內緣部) 124a‧‧‧-X side edge (inner edge)

124b‧‧‧+X側緣部(內緣部) 124b‧‧‧+X side edge (inner edge)

520‧‧‧升降板 520‧‧‧Lift board

522‧‧‧銷 522‧‧‧pin

Claims (11)

一種減壓乾燥裝置,係藉由減壓而使存在於具有第1主表面及第2主表面之基板之上述第1主表面上之處理液乾燥者;其具備有:框體,其具有可收容上述基板之收容空間,並且具有面向上述收容空間之第1面;凹部,其被設置於上述第1面;排氣口,其被設置於上述凹部之深度方向之底面;抽吸機構,其經由上述排氣口而抽吸上述收容空間之環境氣體;第1構件,其被配置於上述收容空間中在上述深度方向上與上述排氣口重疊之位置;第2構件,其被配置於上述收容空間中與上述第1構件之端部及上述凹部之內緣部沿著上述深度方向隔開間隔之位置且於上述深度方向上與上述端部及上述內緣部重疊之位置;以及基板保持部,其將上述基板保持在上述收容空間中相對於上述第1構件及上述第2構件而與上述排氣口為相反側之位置。 A reduced-pressure drying device that dries the processing liquid existing on the first major surface of a substrate having a first major surface and a second major surface by reducing pressure; The storage space for accommodating the substrate and has a first surface facing the storage space; a recessed portion provided on the first surface; an exhaust port provided on the bottom surface in the depth direction of the recessed portion; a suction mechanism, which Ambient air in the storage space is sucked through the exhaust port; a first member is arranged in the storage space at a position overlapping the exhaust port in the depth direction; and a second member is arranged in the above A position in the accommodating space that is spaced apart from the end of the first member and the inner edge of the recess along the depth direction and overlaps the end and the inner edge in the depth direction; and substrate holding A portion that holds the substrate in the accommodating space at a position opposite to the exhaust port with respect to the first member and the second member. 如請求項1之減壓乾燥裝置,其中,上述基板保持部包含有支撐上述基板之上述第2主表面之複數個銷。 The reduced-pressure drying device of claim 1, wherein the substrate holding portion includes a plurality of pins supporting the second main surface of the substrate. 如請求項2之減壓乾燥裝置,其中,上述複數個銷包含有:複數個第1銷,其等沿著第1方向被排列;及複數個第2銷,其等自上述複數個第1銷朝與上述第1方向正交之第2方向隔開間隔地沿著上述第1方向被排列;上述第2構件被配置於上述複數個第1銷與上述複數個第2銷之間。 Such as the reduced pressure drying device of claim 2, wherein the plurality of pins include: a plurality of first pins, which are arranged along the first direction; and a plurality of second pins, which are from the plurality of first pins The pins are arranged along the first direction at intervals in a second direction orthogonal to the first direction; the second member is arranged between the plurality of first pins and the plurality of second pins. 如請求項2或3之減壓乾燥裝置,其中,其進一步具備有:移 動驅動部,其藉由使上述複數個銷沿著上述深度方向移動,而使上述基板在第1基板位置與較上述第1基板位置更靠近上述排氣口之第2基板位置之間移動。 Such as the vacuum drying device of claim 2 or 3, wherein it is further provided with: The movable driving unit moves the plurality of pins along the depth direction to move the substrate between a first substrate position and a second substrate position closer to the exhaust port than the first substrate position. 如請求項4之減壓乾燥裝置,其中,上述移動驅動部於上述抽吸機構開始經由上述排氣口來抽吸上述收容空間之環境氣體後,使上述基板自上述第1基板位置朝上述第2基板位置移動。 The reduced-pressure drying device of claim 4, wherein the moving drive unit causes the substrate to move from the first substrate position to the 2 Move the substrate position. 如請求項1至3中任一項之減壓乾燥裝置,其中,上述第1構件被設置於上述第2構件與上述排氣口之間。 The reduced-pressure drying device according to any one of claims 1 to 3, wherein the first member is provided between the second member and the exhaust port. 如請求項6之減壓乾燥裝置,其中,上述第1構件之至少一部分位於上述凹部內。 The reduced-pressure drying device according to claim 6, wherein at least a part of the first member is located in the concave portion. 如請求項7之減壓乾燥裝置,其中,上述第1構件全部位於上述凹部內。 The reduced-pressure drying device of claim 7, wherein all of the first members are located in the recesses. 如請求項8之減壓乾燥裝置,其中,上述端部與上述內緣部位在同一平面上。 The vacuum drying device of claim 8, wherein the end portion and the inner edge portion are on the same plane. 如請求項1至3中任一項之減壓乾燥裝置,其中,上述基板保持部以上述第1主表面成為在鉛直方向朝上之水平姿勢來保持上述基板,上述第1構件、上述第2構件及上述排氣口位於被保持在上述基板保持部之上述基板的上述第2主表面側。 The reduced-pressure drying device according to any one of claims 1 to 3, wherein the substrate holding portion holds the substrate in a horizontal posture with the first main surface facing upward in the vertical direction, and the first member and the second The member and the exhaust port are located on the second main surface side of the substrate held by the substrate holding portion. 一種減壓乾燥方法,係藉由減壓而使存在於具有第1主表面及第2主表面之基板之上述第1主表面上的處理液乾燥者;其具有:第1步驟,其將上述基板搬入具有收容空間及面向該收容空間之第1面之框體的上述收容空間;以及第2步驟,其於上述第1步驟之後,經由被設置於在上述第1面 所設置之凹部之深度方向之底面的排氣口,來抽吸上述收容空間之環境氣體;上述第2步驟包含有:藉由被配置於上述收容空間中在上述深度方向上與上述排氣口重疊之位置之第1構件來變更朝向上述排氣口之氣流的方向之步驟;以及藉由被配置於上述收容空間中與上述第1構件之端部及上述凹部之內緣部雙方沿著上述深度方向隔開間隔之位置且在上述深度方向上與上述端部及上述內緣部之雙方重疊之位置之第2構件來變更朝向上述排氣口之氣流的方向之步驟。 A method for drying under reduced pressure by reducing the pressure to dry the processing liquid existing on the first major surface of a substrate having a first major surface and a second major surface; The substrate is carried into the storage space having the storage space and the frame body facing the first surface of the storage space; and the second step, which, after the first step, is installed on the first surface via The exhaust port on the bottom surface of the depth direction of the recess is provided to suck the ambient air in the storage space; the second step includes: being arranged in the storage space in the depth direction and the exhaust port The step of changing the direction of the airflow toward the exhaust port by overlapping the first member at the position; The step of changing the direction of the airflow toward the exhaust port by a second member at a position spaced apart in the depth direction and overlapping with both the end portion and the inner edge portion in the depth direction.
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