TWI742374B - Reduced pressure drying apparatus and reduced pressure drying method - Google Patents
Reduced pressure drying apparatus and reduced pressure drying method Download PDFInfo
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- TWI742374B TWI742374B TW108116955A TW108116955A TWI742374B TW I742374 B TWI742374 B TW I742374B TW 108116955 A TW108116955 A TW 108116955A TW 108116955 A TW108116955 A TW 108116955A TW I742374 B TWI742374 B TW I742374B
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- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/04—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases
- B05D3/0406—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases the gas being air
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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Abstract
本發明之課題,在於提供在利用減壓使基板上之處理液乾燥時,減輕處理液之乾燥不均的發生之技術。 The subject of the present invention is to provide a technique for reducing the occurrence of uneven drying of the processing liquid when the processing liquid on the substrate is dried under reduced pressure.
本發明於腔室10內之底面100設置有凹部12,並於該凹部12之底面120設置有排氣口14。於收容空間10S內之Z軸方向(凹部12之深度方向)上與排氣口14重疊之位置設置有第1整流板30。於第1整流板30之端部(-X側端部32a或+X側端部32b)及凹部12之內緣部(-X側緣部124a或+X側緣部124b)在Z軸方向(凹部12之深度方向)上重疊之位置設置有第2整流板40。複數個保持部52在第1整流板30及第2整流板40之上方之位置(上位置L1或下位置L2)保持基板9。 In the present invention, a recess 12 is provided on the bottom surface 100 of the cavity 10, and an exhaust port 14 is provided on the bottom surface 120 of the recess 12. A first rectifying plate 30 is provided at a position overlapping with the exhaust port 14 in the Z-axis direction (the depth direction of the recess 12) in the accommodating space 10S. At the end (-X side end 32a or +X side end 32b) of the first rectifying plate 30 and the inner edge of the recess 12 (-X side edge 124a or +X side edge 124b) in the Z-axis direction A second rectifying plate 40 is provided at a position overlapping (the depth direction of the recess 12). The plurality of holding parts 52 hold the substrate 9 at a position above the first rectifying plate 30 and the second rectifying plate 40 (upper position L1 or lower position L2).
Description
本發明關於減壓乾燥裝置及減壓乾燥方法,尤其關於使塗布於基板上之處理液乾燥之技術。作為處理對象之基板,例如包含有半導體基板、液晶顯示裝置及有機EL(Electroluminescence;電致發光)顯示裝置等之FPD(Flat Panel Display;平板顯示器)用基板、光碟用基板、磁碟用基板、光磁碟用基板、光罩用基板、陶瓷基板、太陽能電池用基板、印刷電路基板等。 The present invention relates to a reduced-pressure drying device and a reduced-pressure drying method, and more particularly to a technique for drying a processing liquid coated on a substrate. The substrates to be processed include, for example, semiconductor substrates, liquid crystal display devices, and organic EL (Electroluminescence; electroluminescence) display devices such as FPD (Flat Panel Display) substrates, optical disk substrates, magnetic disk substrates, Substrates for optical disks, substrates for photomasks, ceramic substrates, substrates for solar cells, printed circuit boards, etc.
過去以來,基板處理裝置(例如,液晶面板製造裝置等)已知有對表面被塗布有處理液之基板實施減壓乾燥處理之減壓乾燥裝置。例如,於光蝕刻(Photolithography)步驟中,存在有為了在預烘烤(Pre-baking)之前使塗布於玻璃基板等之被處理基板上之抗蝕劑液的塗布膜適度地乾燥而使用減壓乾燥裝置之情形。 In the past, a substrate processing apparatus (for example, a liquid crystal panel manufacturing apparatus, etc.) has known a reduced-pressure drying apparatus that performs a reduced-pressure drying process on a substrate coated with a processing liquid on the surface. For example, in the photolithography step, there is the use of reduced pressure in order to appropriately dry the coating film of the resist solution applied on the substrate to be processed, such as a glass substrate, before pre-baking. The situation of the drying device.
習知之具代表性之減壓乾燥裝置,例如如專利文獻1所記載般,在配設於可開閉之腔室中之適當高度之基板支撐構件上水平地載置基板後,關閉腔室而進行減壓乾燥處理(例如,參照專利文獻1、2)。 A conventional representative reduced-pressure drying device, for example, as described in
在此種之減壓乾燥處理中,首先,通過被設置於腔室 內之排氣口而藉由外部之真空泵來進行腔室內之真空排氣。藉由該真空排氣,腔室內之壓力自當時為止之大氣壓狀態變成減壓狀態,並在該減壓狀態下,溶劑成分自基板上之抗蝕劑塗布膜蒸發。在腔室內之壓力被減壓至一定壓力之時間點,使腔室內之減壓結束,其後,從被設置於腔室內之供給口噴出或擴散放出惰性氣體(例如氮氣)或空氣,而使腔室內之壓力回到大氣壓力(使腔室復壓)。若腔室內恢復壓力,腔室便被打開,基板便會自腔室內被搬出。 In this type of reduced-pressure drying treatment, first, the chamber is evacuated by an external vacuum pump through an exhaust port provided in the chamber. By this vacuum exhaust, the pressure in the chamber has changed from the atmospheric pressure state to a reduced pressure state, and in this reduced pressure state, the solvent component evaporates from the resist coating film on the substrate. At the point in time when the pressure in the chamber is reduced to a certain pressure, the pressure in the chamber is ended. After that, inert gas (such as nitrogen) or air is ejected or diffused from the supply port provided in the chamber to make The pressure in the chamber returns to atmospheric pressure (recompresses the chamber). If the pressure in the chamber is restored, the chamber will be opened and the substrate will be removed from the chamber.
於腔室內進行真空排氣之情形時,一般而言,越靠近排氣口環境氣體之流速就會越大。於流速大之情形時,存在有基板上之處理液之表面狀態會混亂的可能性,而存在有發生乾燥不均之可能性。在專利文獻1中,中板被設置於在腔室之底部所設置之排氣口的上方。藉由排氣口由中板所覆蓋,而形成經由中板與腔室之底部之間至排氣口之排氣路徑。又,於專利文獻2中,亦記載有在被設置於底部之排氣口之上方配置整流板之情形。 In the case of vacuum exhaust in the chamber, generally speaking, the closer to the exhaust port, the greater the flow rate of the ambient gas. When the flow rate is high, there is a possibility that the surface condition of the processing liquid on the substrate will be disordered, and there is a possibility that uneven drying may occur. In
[專利文獻1]日本專利特開平9-320949號公報 [Patent Document 1] Japanese Patent Laid-Open No. 9-320949
[專利文獻2]日本專利特開2004-47582號公報 [Patent Document 2] Japanese Patent Laid-Open No. 2004-47582
在上述習知技術中,由於環境氣體自中板之周端部與腔室之側壁之間隙被吸入,因此在靠近該間隙之區域環境氣體之流速會變大。因此,藉由基板被配置於該間隙之周邊,存在有基板上之處理液會發生乾燥不均之可能性,而有改善的空間。 In the above-mentioned conventional technology, since the ambient gas is sucked in from the gap between the peripheral end of the middle plate and the side wall of the chamber, the flow velocity of the ambient gas in the region close to the gap becomes larger. Therefore, since the substrate is arranged on the periphery of the gap, there is a possibility that the processing liquid on the substrate will be unevenly dried, and there is room for improvement.
本發明以提供在利用減壓使基板上之處理液乾燥時,減輕處理液之乾燥不均的發生之技術為目的。 The present invention aims to provide a technique for reducing the occurrence of uneven drying of the processing liquid when the processing liquid on the substrate is dried under reduced pressure.
為了解決上述課題,第1態樣係藉由減壓而使存在於具有第1主表面及第2主表面之基板之上述第1主表面上之處理液乾燥之減壓乾燥裝置;其具備有:框體,其具有可收容上述基板之收容空間,並且具有面向上述收容空間之第1面;凹部,其被設置於上述第1面;排氣口,其被設置於上述凹部之深度方向之底面;抽吸機構,其經由上述排氣口而抽吸上述收容空間之環境氣體;第1構件,其被配置於上述收容空間中在上述深度方向上與上述排氣口重疊之位置;第2構件,其被配置於上述收容空間中與上述第1構件之端部及上述凹部之內緣部沿著上述深度方向隔開間隔之位置且於上述深度方向上與上述端部及上述內緣部重疊之位置;以及基板保持部,其將上述基板保持在上述收容空間中相對於上述第1構件及上述第2構件而與上述排氣口為相反側之位置。 In order to solve the above-mentioned problems, the first aspect is a reduced-pressure drying device that dries the treatment liquid existing on the first major surface of the substrate having the first major surface and the second major surface by reducing the pressure; : Frame body, which has a storage space that can contain the substrate, and has a first surface facing the storage space; a recessed portion provided on the first surface; an exhaust port provided in the depth direction of the recessed portion Bottom surface; a suction mechanism that sucks the ambient gas in the storage space through the exhaust port; a first member, which is arranged in the storage space at a position overlapping the exhaust port in the depth direction; second A member, which is arranged in the housing space at a position spaced apart from the end of the first member and the inner edge of the recess along the depth direction, and is arranged in the depth direction from the end and the inner edge Overlapping position; and a substrate holding portion that holds the substrate in the accommodating space at a position opposite to the exhaust port with respect to the first member and the second member.
第2態樣係於第1態樣之減壓乾燥裝置中,上述基板保持部包含有支撐上述基板之上述第2主表面之複數個銷。 In the second aspect, in the reduced-pressure drying device of the first aspect, the substrate holding portion includes a plurality of pins supporting the second main surface of the substrate.
第3態樣係於第2態樣之減壓乾燥裝置中,上述複數個銷包含有:複數個第1銷,其等沿著第1方向被排列;及複數個第2銷,其等自上述複數個第1銷朝與上述第1方向正交之第2方向隔開間隔地沿著上述第1方向被排列;上述第2構件被配置於上述複數個第1銷與上述複數個第2銷之間。 The third aspect is in the reduced-pressure drying device of the second aspect. The plurality of pins includes: a plurality of first pins arranged along the first direction; and a plurality of second pins, etc. The plurality of first pins are arranged along the first direction at intervals in a second direction orthogonal to the first direction; the second member is arranged on the plurality of first pins and the plurality of second Between pins.
第4態樣係於第2態樣或第3態樣之減壓乾燥裝置中,進一步具備有:移動驅動部,其藉由使上述複數個銷沿著上述深度方向移動,而使上述基板在第1基板位置與較上述第1基板位置更靠近上述排氣口之第2基板位置之間移動。 The fourth aspect is the reduced-pressure drying device of the second aspect or the third aspect, and further includes: a moving drive portion that moves the plurality of pins along the depth direction to move the substrate at Move between the first substrate position and the second substrate position closer to the exhaust port than the first substrate position.
第5態樣係於第4態樣之減壓乾燥裝置中,上述移動驅動部於上述抽吸機構開始經由上述排氣口來抽吸上述收容空間之環境氣體後,使上述基板自上述第1基板位置朝上述第2基板位置移動。 In the fifth aspect, in the reduced pressure drying device of the fourth aspect, the moving drive unit causes the substrate to be removed from the first The substrate position moves toward the above-mentioned second substrate position.
第6態樣係於第1態樣至第5態樣之任一態樣之減壓乾燥裝置中,上述第1構件被設置於上述第2構件與上述排氣口之間。 The sixth aspect is in the reduced-pressure drying device of any one of the first aspect to the fifth aspect, and the first member is provided between the second member and the exhaust port.
第7態樣係於第6態樣之減壓乾燥裝置中,上述第1構件至少一部分位於上述凹部內。 The seventh aspect is in the reduced-pressure drying device of the sixth aspect, in which at least a part of the first member is located in the concave portion.
第8態樣係於第7態樣之減壓乾燥裝置中,上述第1構件全部位於上述凹部內。 The eighth aspect is in the reduced pressure drying device of the seventh aspect, in which all the first members are located in the recesses.
第9態樣係於第8態樣之減壓乾燥裝置中,上述端部與上述內緣部位在同一平面上。 The ninth aspect is in the reduced-pressure drying device of the eighth aspect, wherein the end portion and the inner edge portion are on the same plane.
第10態樣係於第1態樣至第9態樣之任一態樣之減壓乾燥裝置中,上述基板保持部以上述第1主表面成為在鉛直方向朝上之水平姿勢來保持上述基板,上述第1構件、上述第2構件及上述排氣口位於被保持在上述基板保持部之上述基板的上述第2主表面側。 The tenth aspect is in the reduced pressure drying device of any one of the first aspect to the ninth aspect, the substrate holding portion holds the substrate in a horizontal posture with the first main surface facing upward in the vertical direction The first member, the second member, and the exhaust port are located on the second main surface side of the substrate held by the substrate holding portion.
第11態樣係藉由減壓而使存在於具有第1主表面及第2主表面之基板之上述第1主表面上的處理液乾燥之減壓乾燥方法;其具有:第1步驟,其將上述基板搬入具有收容空間及面向該 收容空間之第1面之框體的上述收容空間;以及第2步驟,其於上述第1步驟之後,經由被設置於在上述第1面所設置之凹部之深度方向之底面的排氣口,來抽吸上述收容空間之環境氣體;上述第2步驟包含有:藉由被配置於上述收容空間中在上述深度方向上與上述排氣口重疊之位置之第1構件來變更朝向上述排氣口之氣流的方向之步驟;以及藉由被配置於上述收容空間中與上述第1構件之端部及上述凹部之內緣部雙方沿著上述深度方向隔開間隔之位置且在上述深度方向上與上述端部及上述內緣部之雙方重疊之位置之第2構件來變更朝向上述排氣口之氣流的方向之步驟。 The eleventh aspect is a reduced-pressure drying method in which the treatment liquid existing on the first major surface of a substrate having a first major surface and a second major surface is dried by reducing pressure; it has: a first step, which The above-mentioned substrate is carried into the above-mentioned storage space having a storage space and a frame body facing the first surface of the storage space; and a second step, which after the above-mentioned first step, passes through a recess provided on the above-mentioned first surface The exhaust port on the bottom surface in the depth direction sucks the ambient air in the storage space; the second step includes: being arranged in the storage space at a position overlapping the exhaust port in the depth direction The step of changing the direction of the airflow toward the exhaust port by the first member; and being spaced from both the end of the first member and the inner edge of the recess in the depth direction by being arranged in the accommodation space The step of changing the direction of the airflow toward the exhaust port by separating the second member at the position of the interval and the position overlapping with both the end portion and the inner edge portion in the depth direction.
根據第1態樣之減壓乾燥裝置,由於排氣口之上方由第1構件所覆蓋,因此在對收容空間之環境氣體進行排氣時,可妨礙第1構件上方之環境氣體朝向排氣口被直接吸入之情形。又,由於凹部之緣部分與第1構件之端部之間隙由第2構件所覆蓋,因此可妨礙第2構件上方之環境氣體被直接吸入該間隙之情形。藉由該等之作用,由於可使基板周圍之環境氣體的流速降低,因此可減輕處理液之乾燥不均的發生。 According to the reduced-pressure drying device of the first aspect, since the upper side of the exhaust port is covered by the first member, when the ambient gas in the containing space is exhausted, the ambient gas above the first member can be prevented from facing the exhaust port In the case of being directly inhaled. In addition, since the gap between the edge of the recess and the end of the first member is covered by the second member, it can prevent the ambient air above the second member from being directly sucked into the gap. With these effects, the flow rate of the ambient gas around the substrate can be reduced, thereby reducing the occurrence of uneven drying of the treatment liquid.
根據第2態樣之減壓乾燥裝置,由於利用複數個銷來支撐第2主表面,可藉此減少接觸面積,因此可抑制因支撐構件之接觸所導致處理液之乾燥不均的發生。 According to the reduced-pressure drying device of the second aspect, since the second main surface is supported by a plurality of pins, the contact area can be reduced thereby, and therefore, the occurrence of uneven drying of the treatment liquid caused by the contact of the supporting member can be suppressed.
根據第3態樣之減壓乾燥裝置,可於第1銷與第2銷之間變更朝向排氣口之氣流的方向。 According to the reduced-pressure drying device of the third aspect, the direction of the airflow toward the exhaust port can be changed between the first pin and the second pin.
根據第4態樣之減壓乾燥裝置,可使基板於離排氣口較遠之第1基板位置與靠近排氣口之第2基板位置之間移動。因 此,可對應於被排氣口吸入之環境氣體之速度來調整基板的位置。 According to the reduced-pressure drying device of the fourth aspect, the substrate can be moved between the first substrate position far away from the exhaust port and the second substrate position close to the exhaust port. Therefore, the position of the substrate can be adjusted corresponding to the speed of the ambient gas sucked in by the exhaust port.
根據第5態樣之減壓乾燥裝置,可於收容空間內之減壓開始後,立刻將基板配置於離開氣流較快之排氣口的位置,而可在排氣口附近之流速隨著減壓之進行而降低之後,使基板靠近排氣口,藉此抑制流速的影響。此外,藉由使基板靠近排氣口附近,可促進處理液之減壓乾燥。 According to the decompression drying device of the fifth aspect, immediately after the decompression in the containing space starts, the substrate can be placed in a position away from the exhaust port with a faster airflow, and the flow velocity near the exhaust port can be reduced accordingly. After the pressure is lowered, the substrate is brought close to the exhaust port, thereby suppressing the influence of the flow rate. In addition, by bringing the substrate close to the vicinity of the exhaust port, the reduced-pressure drying of the processing liquid can be promoted.
根據第6態樣之減壓乾燥裝置,第1構件被配置於較第2構件更靠近排氣口之位置。在氣流變得較大之排氣口附近,第1構件抑制環境氣體朝向排氣口直接的吸入。因此,可減低使基板之第1主表面上之處理液乾燥時氣流的影響,而可抑制處理液的乾燥不均。 According to the reduced-pressure drying device of the sixth aspect, the first member is arranged at a position closer to the exhaust port than the second member. In the vicinity of the exhaust port where the airflow becomes larger, the first member suppresses the direct inhalation of ambient air toward the exhaust port. Therefore, the influence of air flow when the processing liquid on the first main surface of the substrate is dried can be reduced, and uneven drying of the processing liquid can be suppressed.
根據第7態樣之減壓乾燥裝置,由於第1構件之至少一部分位於凹部內,因此可使第1構件露出凹部之外側的部分變小。藉此,可較大地確保收容空間內可配置基板的空間。 According to the reduced-pressure drying device of the seventh aspect, since at least a part of the first member is located in the recessed portion, the portion of the first member exposed to the outside of the recessed portion can be reduced. As a result, a large space in which the substrate can be arranged in the storage space can be ensured.
根據第8態樣之減壓乾燥裝置,由於第1構件全部位於凹部內,因此可較大地確保收容空間內可配置基板的空間。 According to the reduced-pressure drying device of the eighth aspect, since the first members are all located in the recesses, it is possible to ensure a large space in the storage space where the substrate can be arranged.
根據第9態樣之減壓乾燥裝置,由於第1構件之端部與凹部之內緣部位於同一平面上,因此於環境氣體通過第1構件之端部與凹部之內緣部之間隙時,可減輕氣流混亂之情形。 According to the vacuum drying device of the ninth aspect, since the end of the first member and the inner edge of the recess are on the same plane, when the ambient gas passes through the gap between the end of the first member and the inner edge of the recess, It can reduce the chaos of the airflow.
根據第10態樣之減壓乾燥裝置,於將基板之存在有處理液之面配置為鉛直方向之朝上之狀態下,經由排氣口吸入收容空間之環境氣體,藉此可使基板周圍之環境氣體朝向鉛直方向之下側移動。 According to the decompression drying device of the tenth aspect, when the surface of the substrate with the processing liquid is arranged in a vertical upward state, the ambient gas in the containing space is sucked through the exhaust port, thereby enabling the surrounding gas The ambient gas moves toward the lower side in the vertical direction.
根據第11態樣之減壓乾燥方法,由於排氣口之上方 由第1構件所覆蓋,因此於對收容空間之環境氣體進行排氣時,可妨礙第1構件上方之環境氣體朝向排氣口被直接吸入之情形。又,由於凹部之緣部分與第1構件之端部之間隙由第2構件所覆蓋,因此可妨礙第2構件上方之環境氣體被直接吸入該間隙之情形。藉由該等之作用,由於可使基板周圍之環境氣體的流速降低,因此可減輕處理液之乾燥不均的發生。 According to the reduced-pressure drying method of the 11th aspect, since the upper part of the exhaust port is covered by the first member, when the ambient gas in the containing space is exhausted, the ambient gas above the first member can be prevented from facing the exhaust port In the case of being directly inhaled. In addition, since the gap between the edge of the recess and the end of the first member is covered by the second member, it can prevent the ambient air above the second member from being directly sucked into the gap. With these effects, the flow rate of the ambient gas around the substrate can be reduced, thereby reducing the occurrence of uneven drying of the treatment liquid.
1、1A‧‧‧減壓乾燥裝置 1. 1A‧‧‧Decompression drying device
9‧‧‧基板 9‧‧‧Substrate
10‧‧‧腔室(框體) 10‧‧‧Chamber (frame)
10P‧‧‧開閉部 10P‧‧‧Open and close
10S‧‧‧收容空間 10S‧‧‧Containment Space
12‧‧‧凹部 12‧‧‧Concave
12a‧‧‧-X側凹部 12a‧‧‧-X side recess
12b‧‧‧+X側凹部 12b‧‧‧+X side recess
14‧‧‧排氣口 14‧‧‧Exhaust port
20‧‧‧抽吸機構 20‧‧‧Suction mechanism
30‧‧‧第1整流板(第1構件) 30‧‧‧The first rectifier plate (the first member)
30a‧‧‧-X側第1整流板 30a‧‧‧-X side first rectifier plate
30b‧‧‧+X側第1整流板 30b‧‧‧+X side 1st rectifier plate
32a‧‧‧-X側端部 32a‧‧‧-X side end
32b‧‧‧+X側端部 32b‧‧‧+X side end
34a‧‧‧-X側間隙 34a‧‧‧-X side clearance
34b‧‧‧+X側間隙 34b‧‧‧+X side clearance
40、40a、40b、40c、40d‧‧‧第2整流板(第2構件) 40, 40a, 40b, 40c, 40d‧‧‧Second rectifier plate (second member)
50‧‧‧升降機構 50‧‧‧Lifting mechanism
52、52a、52b‧‧‧支撐部(基板保持部) 52, 52a, 52b‧‧‧Supporting part (substrate holding part)
54‧‧‧升降驅動部(移動驅動部) 54‧‧‧Lift drive unit (mobile drive unit)
70‧‧‧控制部 70‧‧‧Control Department
80‧‧‧指部 80‧‧‧Finger
90‧‧‧上表面 90‧‧‧Upper surface
100‧‧‧底面(第1面) 100‧‧‧Bottom (1st side)
102‧‧‧外表面 102‧‧‧Outer surface
104‧‧‧壁面 104‧‧‧Wall
120‧‧‧底面 120‧‧‧Bottom
122‧‧‧內壁面 122‧‧‧Inner wall
124a‧‧‧-X側緣部(內緣部) 124a‧‧‧-X side edge (inner edge)
124b‧‧‧+X側緣部(內緣部) 124b‧‧‧+X side edge (inner edge)
520‧‧‧升降板 520‧‧‧Lift board
522‧‧‧銷 522‧‧‧pin
L1‧‧‧上位置(第1基板位置) L1‧‧‧Up position (1st board position)
L2‧‧‧下位置(第2基板位置) L2‧‧‧Lower position (2nd board position)
圖1係顯示自鉛直方向之上側觀察實施形態之減壓乾燥裝置1之腔室10內部之情況的概略俯視圖。 Fig. 1 is a schematic plan view showing the inside of the
圖2係顯示自鉛直方向之上側觀察實施形態之減壓乾燥裝置1之不含4個第2整流板40及升降機構50之腔室10內部之情況的概略俯視圖。 FIG. 2 is a schematic plan view showing the inside of the
圖3係沿著圖1之A-A線之位置之減壓乾燥裝置1的概略剖視圖。 Fig. 3 is a schematic cross-sectional view of the reduced-
圖4係顯示處理對象之基板9被搬入時之減壓乾燥裝置1的概略剖視圖。 4 is a schematic cross-sectional view showing the reduced-
圖5係顯示開始進行排氣時之減壓乾燥裝置1的概略剖視圖。 FIG. 5 is a schematic cross-sectional view showing the reduced-
圖6係顯示開始進行排氣後經過既定時間時之減壓乾燥裝置1的概略剖視圖。 FIG. 6 is a schematic cross-sectional view showing the reduced-
圖7係顯示使處理後之基板9朝外部搬出時之減壓乾燥裝置1的概略剖視圖。 FIG. 7 is a schematic cross-sectional view showing the reduced-
圖8係顯示變形例之減壓乾燥裝置1A的圖。 FIG. 8 is a diagram showing a reduced-
以下,一邊參照隨附的圖式,一邊對本發明之實施形態進行說明。再者,本實施形態所記載之構成元件僅為例示,並非用以將本發明之範圍僅限定於該等構成元件者。於圖式中,為了容易理解,存在有視需要而誇張地或簡略地圖示各部分之尺寸或數量之情形。 Hereinafter, the embodiments of the present invention will be described with reference to the accompanying drawings. In addition, the constituent elements described in this embodiment are only examples, and are not intended to limit the scope of the present invention to only these constituent elements. In the drawings, for ease of understanding, there are cases where the size or quantity of each part is illustrated exaggeratedly or briefly as needed.
除非有特別說明,否則表示相對性或絕對性之位置關係的表現(例如「朝一方向」、「沿著一方向」、「平行」、「正交」、「中心」、「同心」、「同軸」等),不僅為嚴格地表示該位置關係者,且亦為在公差或可得到相同程度之功能之範圍內相對地表示角度或距離有位移之狀態者。除非有特別說明,否則表示相等狀態之表現(例如「同一」、「相等」、「均質」等),不僅為表示定量上嚴格地相等之狀態者,且亦為表示存在有公差或可得到相同程度之功能的差之狀態者。除非有特別說明,否則表示形狀之表現(例如「四角形」或「圓筒形」等),不僅為嚴格地表示幾何學上之該等形狀者,且在可得到相同程度之功效的範圍內,亦為表示例如具有凹凸或倒角等之形狀者。「裝設」、「具有」、「具備」、「包含」或「有」1個構成元件之表現,並非為將其他構成元件之存在排除在外之排他性表現。除非有特別說明,否則所謂「~之上」,除了2個元件相接之情形,亦包含2個元件分開之情形。 Unless otherwise specified, it means the expression of relative or absolute positional relationship (such as "toward one direction", "along one direction", "parallel", "orthogonal", "center", "concentric", "coaxial" ", etc.), not only strictly expressing the positional relationship, but also expressing the state of relative displacement of the angle or distance within the range of tolerance or the same degree of function can be obtained. Unless otherwise specified, the representation of an equal state (such as "identity", "equal", "homogeneous", etc.) not only refers to a quantitatively strictly equal state, but also means that there is a tolerance or that the same can be obtained The poor state of the function of the degree. Unless otherwise specified, expressions of shapes (such as "quadrilateral" or "cylindrical", etc.) are not only those that strictly express geometrically these shapes, but also within the range where the same degree of efficacy can be obtained. It also means that, for example, it has a shape such as unevenness or chamfering. The expression of "install", "have", "have", "include" or "have" one component is not an exclusive expression excluding the existence of other components. Unless otherwise specified, the so-called "~above", in addition to the case where two components are connected, also includes the case where two components are separated.
<1.實施形態> <1. Implementation mode>
圖1係顯示自鉛直方向之上側觀察實施形態之減壓乾燥裝置1之腔室10內部之情況的概略俯視圖。圖2係顯示自鉛直方向之上側觀察實施形態之減壓乾燥裝置1之不含4個第2整流板40及升 降機構50之腔室10內部之情況的概略俯視圖。圖3係沿著圖1之A-A線之位置之減壓乾燥裝置1的概略剖視圖。 Fig. 1 is a schematic plan view showing the inside of the
於各圖中,為了明確化減壓乾燥裝置1之各部分之位置關係,而標示X軸、Y軸及Z軸。在本例子中,X軸方向及Y軸方向為水平方向,而Z軸方向為鉛直方向。於各軸中,將箭頭之前端所朝向之方向設為+(正)方向,並將其相反方向設為-(負)方向。將鉛直方向之朝上設為「+Z方向」,並將朝下設為「-Z方向」。下述所說明之各部分之位置關係僅為一例,並非用以限定於該等位置關係者。 In each figure, in order to clarify the positional relationship of each part of the reduced-
減壓乾燥裝置1具備有腔室10。腔室10呈長方體狀,且為內部具有收容空間10S之框體。減壓乾燥裝置1於該收容空間10S收容基板9,進行藉由減壓使被塗布於基板9之上表面90(第1主表面)之處理液乾燥之減壓乾燥處理。 The reduced-
於腔室10之+Y側之側壁之靠近+Z側之部分設置有開閉部10P。開閉部10P形成在腔室10之外部與腔室10之收容空間10S之間用以通過基板9之開口。又,開閉部10P藉由關閉該開口將外部與收容空間10S遮斷,而使基板9無法通過。 An opening/
腔室10具有面向收容空間10S之底面100。底面100成為水平面。於底面100設置有4個凹部12。4個凹部12包含被配置於-X側之2個-X側凹部12a、及被配置於+X側之2個+X側凹部12b。 The
凹部12之數量並不限定於4個,亦可任意地變更。例如,亦可僅設置1個凹部12。 The number of
以下,專注於1個凹部12來進行說明。凹部12具有 自底面100朝-Z方向凹陷之形狀。凹部12自鉛直方向之上側觀察雖呈矩形,但並非為必要。凹部12之深度方向(Z軸方向)之底面120成為水平面。凹部12具有自底面120之外周部朝鉛直方向之向上立起之內壁面122。內壁面122具有以相對於底面120垂直之方式沿著鉛直方向延伸之部分。藉由內壁面122沿著鉛直方向延伸,可將朝向排氣口14之環境氣體之流動整流成鉛直方向。 Hereinafter, description will be given focusing on one
於凹部12之底面120設置有排氣口14。亦即,減壓乾燥裝置1具有4個排氣口14。排氣口14經由凹部12而連接於收容空間10S。排氣口14被連接於抽吸機構20。抽吸機構20具有對應於來自控制部70之控制指令而動作之未圖示的真空泵。抽吸機構20依據控制指令,經由排氣口14而抽吸收容空間10S內之環境氣體,並將其朝外部排出。 An
減壓乾燥裝置1具備有4個第1整流板30(第1構件)。在本例子中,分別於4個凹部12之內側各配置1個第1整流板30。4個第1整流板30包含有分別於2個-X側凹部12a之內側各配置有1個之2個-X側第1整流板30a、及分別於2個+X側凹部12b之內側各配置有1個之2個+X側第1整流板30b。 The reduced-
各第1整流板30被配置於收容空間10S內與排氣口14在Z軸方向上重疊之位置。亦即,對於各第1整流板30,在自鉛直方向之上側朝鉛直方向之向下(-Z方向)俯視透視第1整流板30及排氣口14之情形時,第1整流板30被配置於收容空間10S中與排氣口14重疊之位置。第1整流板30被配置在相對於排氣口14沿著Z軸方向隔開間隔之位置。第1整流板30為板狀之構件,其小於各凹部12朝深度方向觀察時之開口,且大於各排氣口14之開 口。第1整流板30以平行於水平面之姿勢被配置。亦即,於自鉛直方向之上側朝鉛直方向之向下(-Z方向)俯視透視第1整流板30、凹部12及排氣口14之情形時,第1整流板30小於凹部12之開口,且大於排氣口14之開口。再者,凹部12之開口係凹部12內之空間連接於收容空間10S中位於凹部12之上方之空間的部分,且排氣口14之開口係排氣口14內之空間連接於凹部12內之空間的部分。 Each
各第1整流板30其整體被配置於對應之凹部12內。在本例子中,各第1整流板30之上表面與包含所對應之凹部12之端部之外表面102位在相同高度。各第1整流板30之上表面與外表面102成為齊平,而該外表面102包含有對應之凹部12之作為內緣部之底面100中圍繞各凹部12之周圍之內緣部。亦即,第1整流板30之上表面與外表面102位在同一平面上,而該外表面102包含有作為對應於該第1整流板30之凹部12之內緣部之底面100中圍繞各凹部12之周圍之內緣部。如此,藉由將第1整流板30設置於凹部12內,可使收容空間10S中可配置基板9之空間變大。又,可使收容空間10S之Z軸方向之長度尺寸變小。 The entirety of each first rectifying
再者,第1整流板30之一部分亦可在凹部12內且較外表面102更底面120側(-Z側)。亦即,第1整流板30之一部分亦可在凹部12外且較外表面102更上側(+Z側)。如此,即便為一部分,但藉由將第1整流板30放入凹部12內,可使腔室10之Z軸方向之長度變小。 Furthermore, a part of the
第1整流板30在與凹部12之矩形之內緣部之間設置有間隙。詳細而言,於第1整流板30之-X側端部32a與凹部12 之-X側緣部124a之間設置有-X側間隙34a,而於第1整流板30之+X側端部32b與凹部12之+X側緣部124b之間設置有+X側間隙34b。-X側端部32a係位於第1整流板30之-X側之端部,-X側緣部124a係位於凹部12之-X側之緣部,+X側端部32b係位於第1整流板30之+X側之端部,而+X側緣部124b係位於凹部12之+X側之緣部。 A gap is provided between the
減壓乾燥裝置1具備有4個第2整流板40(第2構件)。4個第2整流板40自-X側朝向+X側,依序包含有第2整流板40a、40b、40c、40d。亦即,自-X側朝向+X側,第2整流板40a、第2整流板40b、第2整流板40c、第2整流板40d依此記載之順序所排列。該等4個第2整流板40a、40b、40c、40d分別為長方形之板狀。4個第2整流板40a、40b、40c、40d,Y軸方向之長度尺寸相同。又,2個第2整流板40a、40d,X軸方向之寬度尺寸相同,而2個第2整流板40b、40c,X軸方向之寬度尺寸相同。2個第2整流板40a、40d沿著X軸方向隔開間隔地被配置,且於該等之間配置有2個第2整流板40b、40c。2個第2整流板40b、40c亦沿著X軸方向相互隔開間隔地被配置。2個第2整流板40a、40b亦沿著X軸方向相互隔開間隔地被配置。2個第2整流板40c、40d亦沿著X軸方向相互隔開間隔地被配置。 The reduced-
第2整流板40a、40b、40c、40d之各者相對於第1整流板30之外周端部與外表面102之雙方,沿著Z軸方向隔開間隔且被設置於Z軸方向上重疊之位置。亦即,於自鉛直方向之上側朝鉛直方向之向下(-Z方向)俯視透視第2整流板40a、40b、40c、40d、第1整流板30及外表面102之情形時,第2整流板40a、40b、 40c、40d分別被配置在收容空間10S中與第1整流板30之外周端部及凹部12之內緣部之雙方重疊之位置。 Each of the
例如,位於最-X側之第2整流板40a,於Z軸方向上與包含有2個-X側第1整流板30a之-X側端部32a、及與該等對向之2個-X側凹部12a之-X側緣部124a(內緣部)之外表面102的部分重疊。亦即,於自鉛直方向之上側朝鉛直方向之向下(-Z方向)俯視透視第2整流板40a、第1整流板30及外表面102之情形時,第2整流板40a被配置於收容空間10S中分別與2個-X側第1整流板30a之-X側端部32a、及與該等之-X側端部32a對向之2個-X側凹部12a之-X側緣部124a的雙方重疊之位置。亦即,第2整流板40a覆蓋2個-X側凹部12a之-X側間隙34a的上方。 For example, the
第2整流板40b於Z軸方向上,與包含有2個-X側第1整流板30a之+X側端部32b及與該等對向之2個-X側凹部12a之+X側緣部124b(內緣部)的外表面102之部分重疊。亦即,於自鉛直方向之上側朝鉛直方向之向下(-Z方向)俯視透視第2整流板40b、第1整流板30及外表面102之情形時,第2整流板40b被配置於收容空間10S中分別與2個-X側第1整流板30a之+X側端部32b及與該等之+X側端部32b對向之2個-X側凹部12a之+X側緣部124b的雙方重疊之位置。亦即,第2整流板40b覆蓋2個-X側凹部12a之+X側間隙34b的上方。 In the Z-axis direction, the
第2整流板40c於Z軸方向上,與包含有2個+X側第1整流板30b之-X側端部32a及與該等對向之2個+X側凹部12b之-X側緣部124a(內緣部)的外表面102之部分重疊。亦即,於自鉛直方向之上側朝鉛直方向之向下(-Z方向)俯視透視第2整流板 40c、第1整流板30及外表面102之情形時,第2整流板40c被配置於收容空間10S中分別與2個+X側第1整流板30b之-X側端部32a、及與該等之-X側端部32a對向之2個+X側凹部12b之2個-X側緣部124a的雙方重疊之位置。亦即,第2整流板40c覆蓋2個+X側凹部12b之-X側間隙34a的上方。 In the Z-axis direction, the
位於最+X側之第2整流板40d,於Z軸方向上與包含有2個+X側第1整流板30b之+X側端部32b及與該等對向之2個+X側凹部12b之+X側緣部124b(內緣部)的外表面102之部分重疊。亦即,於自鉛直方向之上側朝鉛直方向之向下(-Z方向)俯視透視第2整流板40d、第1整流板30及外表面102之情形時,第2整流板40d被配置於收容空間10S中分別與2個+X側第1整流板30b之+X側端部32b、及與該等之+X側端部32b對向之2個+X側凹部12b之+X側緣部124b的雙方重疊之位置。亦即,第2整流板40d覆蓋2個+X側凹部12b之+X側間隙34b的上方。 The
升降機構50在複數個第2整流板40之上方支撐基板9,並且使基板9沿著鉛直方向升降移動。升降機構50包含有6個支撐部52、及升降驅動部54。 The elevating
6個支撐部52相對於第1整流板30被配置在與排氣口14相反側。亦即,6個支撐部52與排氣口14被配置於隔著第1整流板30相互地為相反側之位置。6個支撐部52包含有3個支撐部52a及3個支撐部52b。支撐部52a、52b分別具備有沿著Y軸方向延伸之升降板520、及於1個升降板520上沿著Y軸方向隔開間隔地被配置之複數個銷522。在本例子中,於收容空間10S中靠-X側之位置、X軸方向中央之位置、靠+X側之位置,分別配置有 支撐部52a、52b各1個。自鉛直方向之上側觀察,於第2整流板40a與第2整流板40b之間、第2整流板40b與第2整流板40c之間、及第2整流板40c與第2整流板40d之間分別配置有支撐部52a、52b各1個。基板9藉由被支撐於支撐部52a或支撐部52b所具備之複數個銷522之上端部,而相對於第1整流板30及第2整流板40被保持在與排氣口14相反側之位置。亦即,基板9以第1整流板30及第2整流板40為基準,而被保持在與排氣口14相反側之位置。 The six
升降驅動部54被連接於3個支撐部52a及3個支撐部52b之各者的升降板520,而使該等個別地沿著鉛直方向升降。作為移動驅動部之升降驅動部54之驅動力,亦可經由貫通腔室10之底面100而被連結於升降板520之下表面之棒狀構件(未圖示)被傳遞。藉由升降驅動部54之驅動力,支撐部52a及支撐部52b分別沿著鉛直方向升降。再者,6個支撐部52中2個以上之支撐部52,亦可以一體進行升降之方式被直接連結。例如,亦可將3個支撐部52a相互地連結而使其一體升降。又,亦可使3個支撐部52b相互地連結而一體地升降。於如此之情形時,由於可減少升降驅動部54之動作軸(棒狀構件),因此可簡化升降驅動部54之構成。 The lift drive
支撐部52a所具備之複數個銷522,以與支撐部52b所具備之複數個銷522在Y軸方向之位置上不同之方式被配置。其原因係為了與各種大小之基板9對應。再者,各銷522之位置並不限定於此,亦可任意地設定。 The plurality of
例如,靠-X側之支撐部52a所具備之複數個銷522,係沿著Y軸方向被排列之複數個第1銷之一例。X軸方向中央之支 撐部52a所具備之複數個銷522,係相對於靠-X側之支撐部52a所具備之複數個銷522沿著X軸方向隔開間隔地沿著Y軸方向被排列之複數個第2銷之一例。第2整流板40b係被配置於該等複數個第1銷與複數個第2銷之間之第2構件之一例。 For example, the
又,X軸方向中央之支撐部52a所具備之複數個銷522係複數個第1銷之一例,且為靠+X側之支撐部52a所具備之複數個銷522係複數個第2銷之一例。第2整流板40c係被配置於該等複數個第1銷與複數個第2銷之間的第2構件之一例。 In addition, the plurality of
減壓乾燥裝置1具備有控制部70。控制部70亦可被構成為具備有進行各種運算處理之CPU(Central Processing Unit;中央處理單元)、作為儲存基本程式之讀取專用之記憶體的ROM(Read-Only Memory;唯讀記憶體)、作為儲存各種資訊之讀寫自如之記憶體的RAM(Random Access Memory;隨機存取記憶體)之一般電腦。控制部70亦可具備有儲存控制用應用軟體(程式)或各種資料等之輔助儲存裝置。藉由CPU隨著控制用應用軟體而動作,可實現各種功能。控制部70可進行通信地被連接於開閉部10P、抽吸機構20及升降驅動部54,並對該等發送控制指令,藉此控制該等之動作。 The reduced-
<動作說明> <Action description>
對上述構成之減壓乾燥裝置1之減壓乾燥處理的動作進行說明。再者,除非有特別說明,否則減壓乾燥裝置1之動作係對應於來自控制部70之控制指令而執行者。 The operation of the reduced-pressure drying process of the reduced-
圖4係顯示處理對象之基板9被搬入時之減壓乾燥裝 置1的概略側視圖。減壓乾燥處理包含有將處理對象之基板9(於上表面90塗布有處理液之基板9)自外部搬入腔室10之收容空間10S之搬入步驟S1。 Fig. 4 is a schematic side view showing the reduced-
在搬入步驟S1中,控制部70將與處理對象之基板9的支撐對應之複數個支撐部52(在圖4所示之例子中為3個支撐部52a),配置於既定之鉛直位置。既定之鉛直位置係鉛直方向上之既定位置。其後,控制部70將開閉部10P開啟。通過被開放之開閉部10P,未圖示之搬送裝置將基板9搬入收容空間10S。然後,未圖示之搬送裝置將基板9載置於該複數個支撐部52之各銷522上。藉此,成為基板9被保持在上位置L1(第1基板位置)之狀態。 In the carry-in step S1, the
搬送裝置例如可具備有支撐基板9之下表面之沿著Y軸方向延伸之複數個指部80。複數個指部80可包含有進入被配置在靠-X側位置之支撐部52b及被配置在中央位置之支撐部52a之間的1個以上之指部80、及可進入被配置在中央位置之支撐部52b與配置在+X側位置之支撐部52a之間的位置之1個以上之指部80(參照圖4)。使支撐基板9之各指部80經由開閉部10P而進入收容空間10S,其後,使各指部80在對應之各支撐部52間朝下方移動。藉此,基板9在各指部80與各支撐部52不會產生干涉之狀態下被交接至各支撐部52。 The conveying device may include, for example, a plurality of
圖5係顯示開始進行排氣時之減壓乾燥裝置1的概略側視圖。若搬入步驟S1結束,便進行排氣步驟S2。在排氣步驟S2中,藉由控制部70使抽吸機構20作動,而將收容空間10S之環境氣體自複數個排氣口14排出。 Fig. 5 is a schematic side view showing the reduced-
如圖5所示,收容空間10S之環境氣體朝向排氣口 14移動。此處,收容空間10S之環境氣體之朝向排氣口14移動的方向,係由第2整流板40a~40d所變更。詳細而言,第2整流板40a、40b、40c、40d上之環境氣體之行進方向,係藉由作為水平面之該等之上表面而被變更為朝向該等之端部的水平方向。然後,環境氣體向下通過第2整流板40a與第2整流板40b之間隙、第2整流板40b與第2整流板40c之間隙、第2整流板40c與第2整流板40d之間隙、及包圍收容空間10S四邊之壁面104與第2整流板40a、40b、40c、40d各者之端部之間隙,而朝第2整流板40a、40b、40c、40d之下方移動。 As shown in FIG. 5, the ambient gas in the containing
又,環境氣體之朝向排氣口14移動的方向,係由複數個第1整流板30所變更。詳細而言,朝向第2整流板40a、40b、40c、40d之下方移動之環境氣體的行進方向,係藉由作為水平面之複數個第1整流板30(-X側第1整流板30a及+X側第1整流板30b)之上表面而被變更為朝向該等複數個第1整流板30之端部(包含-X側端部32a及+X側端部32b)的水平方向。又,朝向第2整流板40a、40b、40c、40d之下方移動之環境氣體的行進方向,係藉由作為水平面之底面100(外表面102)而被變更為朝向作為該底面100(外表面102)之端部之凹部12之內緣部的水平方向。其後,環境氣體於凹部12之內緣部(包含-X側緣部124a及+X側緣部124b)與第1整流板30之周端部之間隙(包含-X側間隙34a及+X側間隙34b)向下移動,藉此進入各凹部12內。然後,經由各凹部12內之排氣口14而朝外部被排出。 In addition, the direction in which the ambient gas moves toward the
排氣步驟S2於一開始後,由於在收容空間10S便存在大量之環境氣體,因此環境氣體之流速會在排氣口14附近變大。 在本實施形態中,該排氣步驟S2於一開始後,便將基板9配置在離開如此流速變快之排氣口14附近之第1基板位置L1,可藉此抑制被塗布於上表面90之處理液之表面混亂、突沸(bumping)之情形。藉此,可減輕處理液中乾燥不均的發生。 After the exhaust step S2 is started, since there is a large amount of ambient gas in the containing
圖6係顯示開始進行排氣後經過既定時間時之減壓乾燥裝置1的概略側視圖。於排氣步驟S2之間,進行下降步驟S3。在下降步驟S3中,控制部70於開始進行排氣後經過既定時間(第1既定時間)之後,使複數個支撐部52下降。藉此,基板9自上位置L1移動至下位置L2(第2基板位置)。下位置L2係較上位置L1更鉛直方向之下側,且靠近排氣口14之位置。 Fig. 6 is a schematic side view showing the reduced-
下位置L2由於較上位置L1更靠近排氣口14,因此環境氣體相對地稀薄,氣壓較低。因此,藉由將基板9配置於下位置L2,可有效率地使基板9之處理液乾燥。此處,即便將基板9配置在下位置L2,由於基板9周圍之環境氣體之流速較小,因此引起處理液表面之混亂或處理液之突沸之可能性較低。其原因係在開始排氣後已經過第1既定時間。 Since the lower position L2 is closer to the
圖7係顯示使處理後之基板9搬出外部時之減壓乾燥裝置1的概略側視圖。若排氣步驟S3結束,便進行搬出步驟S4。在搬出步驟S4中,控制部70於開始進行排氣後經過既定時間(第2既定時間)之後,使排氣停止。藉此,殘存於收容空間10S之環境氣體之流動停止。然後,藉由進行收容空間10S之大氣開放,使收容空間10S內之氣壓恢復。收容空間10S之大氣開放既可經由排氣口14來進行,或者,亦可經由未圖示之吸氣口來進行。 FIG. 7 is a schematic side view showing the reduced-
在搬出步驟S4中,藉由控制部70使支撐基板9之複 數個支撐部52上升,而使基板9自下位置L2移動至上位置L1。再者,收容空間10S之大氣開放亦可於使基板9自下位置L2移動至上位置L1後、或者在使基板9自下位置L2朝向上位置L1移動之期間內進行。 In the unloading step S4, the
又,若控制部70打開開閉部10P,未圖示之搬送裝置經由被開放之開閉部10P而接取被支撐在上位置L1之基板9,並將該基板9自收容空間10S搬出。 In addition, when the
如圖5及圖6所示,在減壓乾燥裝置1中,在作為被設置於腔室10之底面100之挖掘部的凹部12設置有排氣口14。因此,凹部12之開口由於較排氣口14大,因此可使排氣口14之外觀上的開口面積變大。藉此,可於排氣步驟S2中,使環境氣體朝向排氣口14之流速降低。 As shown in FIGS. 5 and 6, in the reduced-
如圖5及圖6所示,在減壓乾燥裝置1中,利用第1整流板30來覆蓋排氣口14之上方。藉由該第1整流板30,可妨礙較收容空間10S之第1整流板30更上方之環境氣體朝向排氣口14被直接吸入之情形。由於環境氣體自第1整流板30之周圍朝第1整流板30之下方被吸入,因此可使自基板9所觀察之環境氣體之吸入口在外觀上擴大,並且使其分散。藉此,可降低基板9之周圍之環境氣體的流速。 As shown in FIGS. 5 and 6, in the reduced-
如圖5及圖6所示,在減壓乾燥裝置1中,利用第2整流板40(第2整流板40a、40b、40c、40d)來覆蓋凹部12之內緣部與第1整流板30之端部之間隙(-X側間隙34a及+X側間隙34b)的上方。藉此,可妨礙第2整流板40正上方之環境氣體被直接吸入凹部12與第1整流板30之間隙之情形。由於環境氣體自第2整流板40之周圍被吸入第2整流板40之下方,因此可使自基板9所觀察之環境氣體之吸入口在外觀上擴大,並且可使其分散。藉此,可降低基板9周圍之環境氣體的流速。
As shown in Figures 5 and 6, in the reduced-
如圖5及圖6所示,第2整流板40與第1整流板30之間隙、第2整流板40與底面100(外表面102)之間隙、及第1整流板30與底面120之間隙,分別沿著水平方向擴展。因此,藉由收容空間10S之環境氣體在到達被設於鉛直方向之下側之排氣口14之前通過該等間隙,氣流的方向朝鉛直方向與水平方向地被變更為鋸齒狀。於該情形時,相較於未設置第1整流板30及第2整流板40時,可使環境氣體流動之通路的總距離變長。藉此,可謀求環境氣體之流速的降低。
As shown in Figures 5 and 6, the gap between the
藉由將第1整流板30、第2整流板40設為平坦之板狀,可抑制氣流在該等之表面上混亂之情形。又,藉由將腔室10之底面100(外表面102)及凹部12之底面120亦設為平面,可抑制氣流在該等之面上混亂之情形。
By making the
以上,雖已對實施形態進行說明,但本發明並非被限定於如上所述者,而可進行各種變形。 Although the embodiments have been described above, the present invention is not limited to those described above, and various modifications can be made.
在上述實施形態中,排氣口14雖被設置於凹部12之深度方向的底面120,但亦可被設置於凹部12之內壁面122。
In the above embodiment, the
在上述實施形態中,排氣口14被設置於在鉛直方向之下側之底面100所設置的凹部12內。排氣口14亦可面向收容空間10S而被設置於自底面100之外周端部朝鉛直方向之向上立起的壁面104。 In the above-mentioned embodiment, the
圖8係顯示變形例之減壓乾燥裝置1A的圖。在上述實施形態中,於凹部12之內部配置有第1整流板30。亦可如圖8所示之減壓乾燥裝置1A般,將第1整流板30設置於凹部12之上方(凹部12之外部)。又,亦可如減壓乾燥裝置1A般,將第2整流板40(第2整流板40a、40b、40c、40d)配置於較第1整流板30更下側(靠近排氣口14之側)。第2整流板40被配置於Z軸方向上與第1整流板30之端部(-X側端部32a或+X側端部32b)及凹部12之內緣部(-X側緣部124a或+X側緣部124b)重疊的位置。亦即,於自鉛直方向之上側朝鉛直方向之向下(-Z方向)俯視透視第1整流板30、第2整流板40及凹部12之情形時,第2整流板40被配置於收容空間10S中與第1整流板30之外周端部及凹部12之內緣部雙方重疊的位置。藉由如此地設置第2整流板40,亦可妨礙環境氣體被吸入第1整流板30與凹部12之間隙之情形。 FIG. 8 is a diagram showing a reduced-
雖已詳細地說明本發明,但上述說明之所有態樣僅為例示,本發明並非被限定於該等態樣者。未例示之無數個變形例,可被理解為不超出本發明之範圍即可思及者。上述各實施形態及各變形例所說明之各構成,只要不相互矛盾即可適當地加以組合、或予以省略。 Although the present invention has been described in detail, all the aspects described above are only examples, and the present invention is not limited to these aspects. The countless modified examples that are not illustrated can be understood as those that can be thought of without departing from the scope of the present invention. The configurations described in the above embodiments and modifications may be appropriately combined or omitted as long as they do not contradict each other.
1‧‧‧減壓乾燥裝置 1‧‧‧Decompression drying device
9‧‧‧基板 9‧‧‧Substrate
10‧‧‧腔室(框體) 10‧‧‧Chamber (frame)
10P‧‧‧開閉部 10P‧‧‧Open and close
10S‧‧‧收容空間 10S‧‧‧Containment Space
12‧‧‧凹部 12‧‧‧Concave
12a‧‧‧-X側凹部 12a‧‧‧-X side recess
12b‧‧‧+X側凹部 12b‧‧‧+X side recess
14‧‧‧排氣口 14‧‧‧Exhaust port
20‧‧‧抽吸機構 20‧‧‧Suction mechanism
30a‧‧‧-X側第1整流板 30a‧‧‧-X side first rectifier plate
30b‧‧‧+X側第1整流板 30b‧‧‧+X side 1st rectifier plate
32a‧‧‧-X側端部 32a‧‧‧-X side end
32b‧‧‧+X側端部 32b‧‧‧+X side end
34a‧‧‧-X側間隙 34a‧‧‧-X side clearance
34b‧‧‧+X側間隙 34b‧‧‧+X side clearance
40a、40b、40c、40d‧‧‧第2整流板(第2構件) 40a, 40b, 40c, 40d‧‧‧Second rectifier plate (second member)
50‧‧‧升降機構 50‧‧‧Lifting mechanism
52a、52b‧‧‧支撐部(基板保持部) 52a, 52b‧‧‧Supporting part (substrate holding part)
54‧‧‧升降驅動部(移動驅動部) 54‧‧‧Lift drive unit (mobile drive unit)
70‧‧‧控制部 70‧‧‧Control Department
90‧‧‧上表面 90‧‧‧Upper surface
100‧‧‧底面(第1面) 100‧‧‧Bottom (1st side)
102‧‧‧外表面 102‧‧‧Outer surface
104‧‧‧壁面 104‧‧‧Wall
120‧‧‧底面 120‧‧‧Bottom
122‧‧‧內壁面 122‧‧‧Inner wall
124a‧‧‧-X側緣部(內緣部) 124a‧‧‧-X side edge (inner edge)
124b‧‧‧+X側緣部(內緣部) 124b‧‧‧+X side edge (inner edge)
520‧‧‧升降板 520‧‧‧Lift board
522‧‧‧銷 522‧‧‧pin
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004047582A (en) * | 2002-07-09 | 2004-02-12 | Hirata Corp | Substrate treatment equipment |
JP2011119534A (en) * | 2009-12-04 | 2011-06-16 | Renesas Electronics Corp | Heat treatment apparatus and heat treatment method |
TW201441568A (en) * | 2013-03-14 | 2014-11-01 | Tokyo Electron Ltd | Drying apparatus and drying method |
TW201714212A (en) * | 2015-07-29 | 2017-04-16 | 東京威力科創股份有限公司 | Substrate processing device, substrate processing method, and storage medium |
US9793142B2 (en) * | 2012-10-25 | 2017-10-17 | Tokyo Electron Limited | Substrate processing apparatus and substrate processing method |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3631847B2 (en) | 1996-05-28 | 2005-03-23 | 大日本印刷株式会社 | Vacuum drying equipment |
JP4267809B2 (en) * | 1999-11-16 | 2009-05-27 | 東京エレクトロン株式会社 | Substrate processing apparatus and processing method |
JP2002372368A (en) * | 2001-06-14 | 2002-12-26 | Dainippon Printing Co Ltd | Pressure reducing dryer |
JP3920699B2 (en) * | 2001-09-19 | 2007-05-30 | 東京エレクトロン株式会社 | Vacuum drying apparatus and coating film forming method |
JP3784305B2 (en) * | 2001-11-20 | 2006-06-07 | 東京エレクトロン株式会社 | Vacuum drying apparatus and vacuum drying method |
JP4244176B2 (en) * | 2002-10-25 | 2009-03-25 | 大日本スクリーン製造株式会社 | Substrate processing equipment |
TWI231950B (en) * | 2002-11-28 | 2005-05-01 | Tokyo Electron Ltd | Substrate processing apparatus and cleaning method |
KR20050050818A (en) * | 2003-11-26 | 2005-06-01 | 삼성에스디아이 주식회사 | Method of spin coating and device for the method |
JP4312787B2 (en) * | 2006-11-15 | 2009-08-12 | 東京エレクトロン株式会社 | Vacuum dryer |
KR101558596B1 (en) * | 2008-09-25 | 2015-10-07 | 도쿄엘렉트론가부시키가이샤 | Reduced-pressure drying device and reduced-pressure drying method |
CN201815456U (en) * | 2010-10-09 | 2011-05-04 | 京东方科技集团股份有限公司 | Structure of pressure reduced drying chamber |
JP6093172B2 (en) * | 2012-12-26 | 2017-03-08 | 株式会社Screenホールディングス | Vacuum drying apparatus and vacuum drying method |
JP6391362B2 (en) * | 2014-08-25 | 2018-09-19 | 株式会社Screenホールディングス | Vacuum drying apparatus, substrate processing apparatus, and vacuum drying method |
JP6872328B2 (en) * | 2016-09-06 | 2021-05-19 | 株式会社Screenホールディングス | Vacuum drying device, vacuum drying system, vacuum drying method |
CN107042244A (en) * | 2017-05-27 | 2017-08-15 | 宁波奇尘电子科技有限公司 | A kind of reverse multi-angle blow drying device |
-
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004047582A (en) * | 2002-07-09 | 2004-02-12 | Hirata Corp | Substrate treatment equipment |
JP2011119534A (en) * | 2009-12-04 | 2011-06-16 | Renesas Electronics Corp | Heat treatment apparatus and heat treatment method |
US9793142B2 (en) * | 2012-10-25 | 2017-10-17 | Tokyo Electron Limited | Substrate processing apparatus and substrate processing method |
TW201441568A (en) * | 2013-03-14 | 2014-11-01 | Tokyo Electron Ltd | Drying apparatus and drying method |
TW201714212A (en) * | 2015-07-29 | 2017-04-16 | 東京威力科創股份有限公司 | Substrate processing device, substrate processing method, and storage medium |
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