JP2019211109A - Vacuum dryer, and vacuum drying method - Google Patents

Vacuum dryer, and vacuum drying method Download PDF

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JP2019211109A
JP2019211109A JP2018104841A JP2018104841A JP2019211109A JP 2019211109 A JP2019211109 A JP 2019211109A JP 2018104841 A JP2018104841 A JP 2018104841A JP 2018104841 A JP2018104841 A JP 2018104841A JP 2019211109 A JP2019211109 A JP 2019211109A
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substrate
drying apparatus
exhaust port
vacuum drying
recess
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JP6759279B2 (en
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富藤 幸雄
Yukio Tomifuji
幸雄 富藤
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Screen Holdings Co Ltd
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Priority to CN201910467958.4A priority patent/CN110548658B/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/04Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases
    • B05D3/0406Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases the gas being air
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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    • H01L21/67259Position monitoring, e.g. misposition detection or presence detection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions

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  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

To provide a technique capable of reducing occurence of uneven drying upon drying a treatment liquid present on a base plate under vacuum.SOLUTION: A recessed part 12 is provided on a bottom face 100 of a chamber 10, and an exhaust port 14 is provided on a bottom face 120 of the recessed part 12. A first distribution plate 30 is provided on a position overlapping the exhaust port 14 in a Z axis direction. A second distribution plate 40 is disposed on a position overlapping an end part (-X side end part 32a or +X side end part 32b) of the first distribution plate 30 and an inner edge (-X side edge 124a or +X side edge 124b) of the recessed part 12 in the Z axis direction. Multiple holding parts 52 hold a substrate 9 at a position (upper position L1 or lower position L2) above the second distribution plate 40.SELECTED DRAWING: Figure 3

Description

この発明は、減圧乾燥装置および減圧乾燥方法に関し、特に、基板上に塗布された処理液を乾燥させる技術に関する。処理対象となる基板には、例えば、半導体基板、液晶表示装置および有機EL(Electroluminescence)表示装置などのFPD(Flat Panel Display)用基板、光ディスク用基板、磁気ディスク用基板、光磁気ディスク用基板、フォトマスク用基板、セラミック基板、太陽電池用基板、プリント基板などが含まれる。   The present invention relates to a vacuum drying apparatus and a vacuum drying method, and more particularly to a technique for drying a processing liquid applied on a substrate. Examples of substrates to be processed include semiconductor substrates, FPD (Flat Panel Display) substrates such as liquid crystal display devices and organic EL (Electroluminescence) display devices, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, Examples include photomask substrates, ceramic substrates, solar cell substrates, and printed circuit boards.

従来、基板処理装置(例えば、液晶パネル製造装置など)では、その表面に処理液が塗布された基板に対して、減圧乾燥処理を施す減圧乾燥装置が知られている。例えば、フォトリソグラフィー工程においては、ガラス基板等の被処理基板上に塗布したレジスト液の塗布膜をプリベーキングに先立って適度に乾燥させるために減圧乾燥装置が用いられる場合がある。   2. Description of the Related Art Conventionally, in a substrate processing apparatus (for example, a liquid crystal panel manufacturing apparatus), there is known a reduced pressure drying apparatus that performs a reduced pressure drying process on a substrate having a surface coated with a processing liquid. For example, in a photolithography process, a reduced-pressure drying apparatus may be used in order to appropriately dry a coating film of a resist solution applied on a substrate to be processed such as a glass substrate prior to pre-baking.

従来の代表的な減圧乾燥装置は、たとえば特許文献1に記載されるように、開閉可能なチャンバの中の適宜の高さに配設された基板支持部材上に基板を水平に載置してから、チャンバを閉じて減圧乾燥処理を行う(例えば、特許文献1,2参照)。   For example, as described in Patent Document 1, a conventional typical reduced-pressure drying apparatus places a substrate horizontally on a substrate support member disposed at an appropriate height in a chamber that can be opened and closed. Then, the chamber is closed and vacuum drying is performed (see, for example, Patent Documents 1 and 2).

この種の減圧乾燥処理では、まず、チャンバ内に設けられた排気口を通じて外の真空ポンプによりチャンバ内の真空排気を行う。この真空排気により、チャンバ内の圧力がそれまでの大気圧状態から減圧状態に変わり、この減圧状態の下で基板上のレジスト塗布膜から溶剤成分が蒸発する。チャンバ内の圧力が一定圧力まで減圧された時点で、チャンバ内の減圧を終了させ、その後、チャンバ内に設けられた供給口より不活性ガス(たとえば窒素ガス)あるいはエアを噴出または拡散放出して、チャンバ内の圧力を大気圧に戻す(復圧させる)。チャンバ内が復圧したら、チャンバが開けられて、チャンバ内から基板が搬出される。   In this type of reduced-pressure drying process, first, the chamber is evacuated by an external vacuum pump through an exhaust port provided in the chamber. By this evacuation, the pressure in the chamber changes from the atmospheric pressure state so far to a reduced pressure state, and the solvent component evaporates from the resist coating film on the substrate under this reduced pressure state. When the pressure in the chamber is reduced to a certain pressure, the pressure reduction in the chamber is terminated, and then an inert gas (for example, nitrogen gas) or air is blown out or diffused and discharged from a supply port provided in the chamber. The pressure in the chamber is returned to atmospheric pressure (returned to pressure). When the pressure in the chamber is restored, the chamber is opened and the substrate is unloaded from the chamber.

チャンバにおいて真空排気を行った場合、一般的には、排気口に近いほど雰囲気の流速が大きくなる。流速が大きい場合、基板上の処理液の表面状態が荒れるおそれがあり、乾燥むらが発生する可能性がある。特許文献1では、チャンバの底部に設けられた排気口の上方に中板が設けられている。排気口が中板で覆われていることによって、中板とチャンバの底部との間を経由して排気口に至る排気経路を形成している。また、特許文献2においても、底部に設けられた排気口の上方に整流板を配することが記載されている。   When evacuation is performed in the chamber, generally, the closer to the exhaust port, the higher the flow velocity of the atmosphere. When the flow rate is large, the surface state of the processing liquid on the substrate may be roughened, and drying unevenness may occur. In Patent Document 1, an intermediate plate is provided above an exhaust port provided at the bottom of the chamber. By covering the exhaust port with the intermediate plate, an exhaust path is formed that reaches the exhaust port via the space between the intermediate plate and the bottom of the chamber. Patent Document 2 also describes that a rectifying plate is disposed above an exhaust port provided at the bottom.

特開平9−320949号公報Japanese Patent Laid-Open No. 9-320949 特開2004−47582号公報JP 2004-47582 A

上記従来技術では、中板の周端部とチャンバの側壁との隙間から雰囲気が吸い込まれるため、この隙間に近い領域で雰囲気の流速が大きくなってしまう。このため、この隙間周辺に基板が配置されることによって、基板上の処理液について乾燥むらが発生する可能性があり、改善の余地があった。   In the above prior art, the atmosphere is sucked in through the gap between the peripheral edge of the intermediate plate and the side wall of the chamber, so the flow velocity of the atmosphere increases in a region near this gap. For this reason, when the substrate is arranged around the gap, there is a possibility that drying unevenness may occur in the processing liquid on the substrate, and there is room for improvement.

本発明は、基板上の処理液を減圧で乾燥させる際に、乾燥むらの発生を軽減する技術を提供することを目的とする。   An object of the present invention is to provide a technique for reducing the occurrence of uneven drying when a processing liquid on a substrate is dried under reduced pressure.

上記課題を解決するため、第1態様は、第1主面および第2主面を有し前記第1主面に処理液を有する基板を、減圧によって乾燥させる減圧乾燥装置であって、前記基板を収容可能な収容空間を有するとともに前記収容空間に面する第1面を有する筐体と、第1面に設けられている凹部と、前記凹部の深さ方向の底面に設けられている排気口と、前記排気口から前記収容空間の雰囲気を吸引する吸引機構と、前記収容空間における、前記排気口と前記深さ方向に重なる位置に配される第1部材と、前記収容空間における、前記第1部材の端部および前記凹部の内縁部と前記深さ方向に間隔をおいて重なる位置に配される第2部材と、前記収容空間における、前記第1部材および前記第2部材に対して前記排気口とは反対側の位置に前記基板を保持する基板保持部とを備える。   In order to solve the above-mentioned problem, a first aspect is a reduced-pressure drying apparatus that dries a substrate having a first main surface and a second main surface and having a treatment liquid on the first main surface by a reduced pressure, wherein the substrate And a housing having a first surface facing the housing space, a recess provided in the first surface, and an exhaust port provided in a bottom surface in the depth direction of the recess A suction mechanism for sucking the atmosphere of the housing space from the exhaust port, a first member disposed in the housing space at a position overlapping the exhaust port in the depth direction, and the first member in the housing space. A second member disposed at a position overlapping with an end portion of one member and an inner edge of the concave portion at an interval in the depth direction, and the first member and the second member in the accommodation space Place the board on the opposite side of the exhaust port And a substrate holding portion for lifting.

第2態様は、第1態様の減圧乾燥装置であって、前記基板保持部は、前記基板の前記第2主面を支持する複数のピンを含む。   A 2nd aspect is a pressure reduction drying apparatus of a 1st aspect, Comprising: The said board | substrate holding part contains the several pin which supports the said 2nd main surface of the said board | substrate.

第3態様は、第2態様の減圧乾燥装置であって、前記複数のピンは、第1方向に配される複数の第1ピンと、前記複数の第1ピンから前記第1方向に直交する第2方向に間隔をあけて前記第1方向に配される複数の第2ピンと、を含み、前記第2部材は、前記複数の第1ピンと前記複数の第2ピンとの間に配されている。   A third aspect is the vacuum drying apparatus according to the second aspect, wherein the plurality of pins includes a plurality of first pins arranged in a first direction and a plurality of first pins orthogonal to the first direction from the plurality of first pins. A plurality of second pins arranged in the first direction at intervals in two directions, and the second member is arranged between the plurality of first pins and the plurality of second pins.

第4態様は、第1態様から第3態様のいずれか1つの減圧乾燥装置であって、前記複数のピンを前記深さ方向に移動させることによって、前記基板を第1基板位置と、前記第1基板位置よりも前記排気口に近い第2基板位置との間で移動させる移動駆動部、をさらに備える。   A fourth aspect is the vacuum drying apparatus according to any one of the first aspect to the third aspect, wherein the plurality of pins are moved in the depth direction to move the substrate to the first substrate position, And a movement driving unit that moves the second substrate position closer to the exhaust port than the first substrate position.

第5態様は、第1態様から第4態様のいずれか1つの減圧乾燥装置であって、記移動駆動部は、前記吸引機構が前記排気口を介して雰囲気の吸引を開始した後、前記基板を前記第1基板位置から前記第2基板位置に移動させる。   A fifth aspect is the reduced pressure drying apparatus according to any one of the first aspect to the fourth aspect, wherein the movement driving unit is configured such that after the suction mechanism starts sucking an atmosphere through the exhaust port, the substrate Is moved from the first substrate position to the second substrate position.

第6態様は、第1態様から第5態様のいずれか1つの減圧乾燥装置であって、前記第1部材が前記第2部材と前記排気口との間に設けられている。   A sixth aspect is the vacuum drying apparatus according to any one of the first aspect to the fifth aspect, wherein the first member is provided between the second member and the exhaust port.

第7態様は、第6態様の減圧乾燥装置であって、前記第1部材の少なくとも一部が、前記凹部内にある。   A seventh aspect is the vacuum drying apparatus according to the sixth aspect, wherein at least a part of the first member is in the recess.

第8態様は、第7態様の減圧乾燥装置であって、前記第1部材の全部が、前記凹部内にある。   An eighth aspect is the vacuum drying apparatus according to the seventh aspect, wherein the first member is entirely in the recess.

第9態様は、第7態様または第8態様の減圧乾燥装置であって、前記第1部材の前記端部が、前記内縁部と面一である。   A ninth aspect is the reduced pressure drying apparatus according to the seventh aspect or the eighth aspect, wherein the end of the first member is flush with the inner edge.

第10態様は、第1態様から第9態様のいずれか1つの減圧乾燥装置であって、前記保持部は、前記基板を前記第1主面が鉛直方向上向きとなる水平姿勢で保持し、前記第1部材、前記第2部材および前記排気口は、前記保持部に保持される前記基板の前記第2主面側に設けられている。   A tenth aspect is the vacuum drying apparatus according to any one of the first aspect to the ninth aspect, wherein the holding unit holds the substrate in a horizontal posture in which the first main surface is vertically upward, The first member, the second member, and the exhaust port are provided on the second main surface side of the substrate held by the holding portion.

第11態様は、第1主面および第2主面を有し前記第1主面に処理液を有する基板を、減圧によって乾燥させる減圧乾燥方法であって、(a)収容空間に面する第1面を有しており、筐体に、前記基板を保持する工程と、(b)前記(a)工程の後、前記第1面に設けられている凹部の深さ方向の底面に設けられている排気口から、前記収容空間の雰囲気を吸引する工程と、(c)前記(b)工程において、前記収容空間における、前記排気口と前記深さ方向に重なる位置に配される第1部材により、前記排気口に向かう気流の方向を変更する工程と、(d)前記(b)工程において、前記収容空間における、前記第1部材の端部および前記凹部の内縁部の双方と前記深さ方向に間隔をおいて重なる位置に配される第2部材により、前記排気口に向かう気流の方向を変更する工程とを含む。   An eleventh aspect is a reduced-pressure drying method for drying a substrate having a first main surface and a second main surface and having a treatment liquid on the first main surface by a reduced pressure, wherein (a) the first facing the accommodation space And (b) after the step (a), the step is provided on the bottom surface in the depth direction of the concave portion provided on the first surface. A first member disposed at a position overlapping the exhaust port in the depth direction in the housing space in the step of sucking the atmosphere of the housing space from the exhaust port, In the step of changing the direction of the air flow toward the exhaust port, and (d) in the step (b), both the end of the first member and the inner edge of the recess and the depth in the housing space The exhaust gas is exhausted by the second member disposed at a position overlapping in the direction. And a step of changing the direction of air flow towards the.

第1態様の減圧乾燥装置によると、排気口の上方が第1部材で覆われているため、収容空間の雰囲気を排気する際に、第1部材上方の雰囲気が排気口へ直接吸い込まれることを妨げることができる。また、凹部の縁部分と第1部材の端部との隙間が第2部材で覆われているため、第2部材上方の雰囲気が当該隙間に直接吸い込まれることを妨げることができる。これらの作用により、基板周囲の雰囲気の流速を低下できるため、乾燥むらの発生を軽減できる。   According to the vacuum drying apparatus of the first aspect, since the upper part of the exhaust port is covered with the first member, the atmosphere above the first member is directly sucked into the exhaust port when the atmosphere of the accommodation space is exhausted. Can hinder. Moreover, since the clearance gap between the edge part of a recessed part and the edge part of a 1st member is covered with the 2nd member, it can prevent that the atmosphere above a 2nd member is directly sucked into the said clearance gap. By these actions, the flow velocity of the atmosphere around the substrate can be reduced, so that the occurrence of uneven drying can be reduced.

第2態様の減圧乾燥装置によると、第2主面を複数のピンで支持するため、接触面積を減らすことができるため、支持部材の接触による乾燥むらの発生を抑制できる。   According to the vacuum drying apparatus of the second aspect, since the second main surface is supported by the plurality of pins, the contact area can be reduced, so that the occurrence of uneven drying due to the contact of the support member can be suppressed.

第3態様の減圧乾燥装置によると、第1ピンと第2ピンとの間で、排気口に向かう気流の方向を変更することができる。   According to the vacuum drying apparatus of the third aspect, the direction of the airflow toward the exhaust port can be changed between the first pin and the second pin.

第4態様の減圧乾燥装置によると、排気口から遠い第1基板位置と、排気口に近い第2基板位置の間で移動させることができる。このため、排気口に吸い込まれる雰囲気の速さ応じて、基板の位置を調整できる。   According to the vacuum drying apparatus of the fourth aspect, it is possible to move between the first substrate position far from the exhaust port and the second substrate position close to the exhaust port. For this reason, the position of the substrate can be adjusted according to the speed of the atmosphere sucked into the exhaust port.

第5態様の減圧乾燥装置によると、減圧開始直後は、気流が速い排気口から離れた位置に配することができ、減圧が進んで排気口付近の流速が低下してから、基板を排気口に近づけることにより、流速の影響を抑制できる。さらに、排気口付近に近づけることにより、減圧乾燥を促進できる。   According to the vacuum drying apparatus of the fifth aspect, immediately after the start of the pressure reduction, the substrate can be disposed at a position away from the exhaust port where the airflow is fast, and after the pressure reduction progresses and the flow velocity near the exhaust port decreases, the substrate is removed from the exhaust port. By approaching to, the influence of the flow velocity can be suppressed. Furthermore, the reduced-pressure drying can be promoted by approaching the vicinity of the exhaust port.

第6態様の減圧乾燥装置によると、第1部材が、第2部材よりも排気口に近い位置に配される。気流が比較的大きくなる排気口付近で、第1部材が排気口への引込みを抑制する。このため、基板の第1主面の処理液を乾燥させた際の気流の影響を低減でき、乾燥むらを抑制できる。   According to the vacuum drying apparatus of the sixth aspect, the first member is arranged at a position closer to the exhaust port than the second member. In the vicinity of the exhaust port where the airflow becomes relatively large, the first member suppresses the drawing into the exhaust port. For this reason, the influence of the airflow at the time of drying the process liquid of the 1st main surface of a board | substrate can be reduced, and drying unevenness can be suppressed.

第7態様の減圧乾燥装置によると、第1部材の少なくとも一部が凹部内にあるため、第1部材の凹部の外側に出る部分を小さくすることができる。これにより、収容空間における基板を配置可能な空間を大きく確保できる。   According to the reduced pressure drying apparatus of the seventh aspect, since at least a part of the first member is in the recess, the portion of the first member that goes out of the recess can be reduced. Thereby, the space which can arrange | position the board | substrate in accommodation space is securable greatly.

第8態様の減圧乾燥装置によると、第1部材の全部が凹部内にあるため、収容空間における基板を配置可能な空間を大きく確保できる。   According to the vacuum drying apparatus of the eighth aspect, since all of the first member is in the recess, a large space in which the substrate can be placed in the accommodation space can be secured.

第9態様の減圧乾燥装置によると、第1部材の端部と、凹部の内縁部と面一であるため、雰囲気が第1部材の端部と凹部の内縁部の隙間を通る際に、気流が乱れることを軽減できる。   According to the vacuum drying apparatus of the ninth aspect, the end of the first member and the inner edge of the recess are flush with the air flow when the atmosphere passes through the gap between the end of the first member and the inner edge of the recess. Can be reduced.

第10態様の減圧乾燥装置によると、基板の処理液を有する面が鉛直方向上向きに配置した状態で、排気口から収容空間の雰囲気を吸い込むことにより、基板周囲の雰囲気を鉛直方向下側に向けて移動させることができる。   According to the vacuum drying apparatus of the tenth aspect, the atmosphere around the substrate is directed downward in the vertical direction by sucking the atmosphere of the accommodation space from the exhaust port in a state where the surface of the substrate having the processing liquid is arranged vertically upward. Can be moved.

第11態様の減圧乾燥方法によると、排気口の上方が第1部材で覆われているため、収容空間の雰囲気を排気する際に、第1部材上方の雰囲気が排気口へ直接吸い込まれることを妨げることができる。また、凹部の縁部分と第1部材の端部との隙間が第2部材で覆われているため、第2部材上方の雰囲気が当該隙間に直接吸い込まれることを妨げることができる。これらの作用により、基板周囲の雰囲気の流速を低下できるため、乾燥むらの発生を軽減できる。   According to the vacuum drying method of the eleventh aspect, since the upper part of the exhaust port is covered with the first member, the atmosphere above the first member is directly sucked into the exhaust port when the atmosphere of the accommodation space is exhausted. Can hinder. Moreover, since the clearance gap between the edge part of a recessed part and the edge part of a 1st member is covered with the 2nd member, it can prevent that the atmosphere above a 2nd member is directly sucked into the said clearance gap. By these actions, the flow velocity of the atmosphere around the substrate can be reduced, so that the occurrence of uneven drying can be reduced.

実施形態における減圧乾燥装置1のチャンバ10内部を鉛直方向上側から見た様子を示す概略平面図である。It is a schematic plan view which shows a mode that the inside of the chamber 10 of the reduced pressure drying apparatus 1 in embodiment was seen from the perpendicular direction upper side. 実施形態の減圧乾燥装置1における4つの第2整流板40および昇降機構50を除いたチャンバ10内部を鉛直方向上側から見た様子を示す概略平面図である。It is a schematic plan view which shows a mode that the inside of the chamber 10 except the four 2nd baffle plates 40 and the raising / lowering mechanism 50 in the reduced pressure drying apparatus 1 of embodiment was seen from the perpendicular direction upper side. 図1のA−A線に沿う位置における減圧乾燥装置1の概略断面図である。It is a schematic sectional drawing of the reduced pressure drying apparatus 1 in the position along the AA line of FIG. 処理対象の基板9が搬入されたときの減圧乾燥装置1を示す概略側面図である。It is a schematic side view which shows the reduced pressure drying apparatus 1 when the board | substrate 9 to be processed is carried in. 排気を開始したときの減圧乾燥装置1を示す概略側面図である。It is a schematic side view which shows the reduced pressure drying apparatus 1 when exhaust_gas | exhaustion is started. 排気を開始してから所定時間経過したときの減圧乾燥装置1を示す概略側面図である。It is a schematic side view which shows the reduced pressure drying apparatus 1 when predetermined time passes since exhaust_gas | exhaustion was started. 処理後の基板9を外部に搬出させるときの減圧乾燥装置1を示す概略側面図である。It is a schematic side view which shows the reduced pressure drying apparatus 1 when carrying out the board | substrate 9 after a process outside. 変形例に係る減圧乾燥装置1Aを示す図である。It is a figure which shows 1 A of reduced pressure drying apparatuses which concern on a modification.

以下、添付の図面を参照しながら、本発明の実施形態について説明する。なお、この実施形態に記載されている構成要素はあくまでも例示であり、本発明の範囲をそれらのみに限定する趣旨のものではない。図面においては、理解容易のため、必要に応じて各部の寸法や数が誇張又は簡略化して図示されている場合がある。   Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In addition, the component described in this embodiment is an illustration to the last, and is not a thing of the meaning which limits the scope of the present invention only to them. In the drawings, the size and number of each part may be exaggerated or simplified as necessary for easy understanding.

相対的または絶対的な位置関係を示す表現(例えば「一方向に」「一方向に沿って」「平行」「直交」「中心」「同心」「同軸」等)は、特に断らない限り、その位置関係を厳密に表すのみならず、公差もしくは同程度の機能が得られる範囲で相対的に角度または距離に関して変位された状態も表すものとする。等しい状態であることを示す表現(例えば「同一」「等しい」「均質」等)は、特に断らない限り、定量的に厳密に等しい状態を表すのみならず、公差もしくは同程度の機能が得られる差が存在する状態も表すものとする。形状を示す表現(例えば、「四角形状」または「円筒形状」等)は、特に断らない限り、幾何学的に厳密にその形状を表すのみならず、同程度の効果が得られる範囲で、例えば凹凸や面取り等を有する形状も表すものとする。一の構成要素を「備える」「具える」「具備する」「含む」又は「有する」という表現は、他の構成要素の存在を除外する排他的表現ではない。「〜の上」とは、特に断らない限り、2つの要素が接している場合のほか、2つの要素が離れている場合も含む。   Unless otherwise specified, expressions that indicate relative or absolute positional relationships (eg, “in one direction”, “along one direction”, “parallel”, “orthogonal”, “center”, “concentric”, “coaxial”, etc.) Not only the positional relationship is strictly expressed, but also a state of relative displacement with respect to an angle or a distance within a range where a tolerance or a similar function can be obtained. Expressions indicating equal states (for example, “same”, “equal”, “homogeneous”, etc.), unless otherwise specified, not only represent quantitatively exactly equal states but also provide tolerances or similar functions. It shall also represent a state where there is a difference. Unless otherwise specified, the expression indicating the shape (for example, “square shape” or “cylindrical shape”) not only represents the shape geometrically but also within a range where the same effect can be obtained. A shape having unevenness and chamfering is also expressed. The expression “comprising”, “comprising”, “comprising”, “including”, or “having” one component is not an exclusive representation excluding the presence of another component. The term “above” includes the case where two elements are in contact as well as the case where two elements are separated unless otherwise specified.

<1. 実施形態>
図1は、実施形態における減圧乾燥装置1のチャンバ10内部を鉛直方向上側から見た様子を示す概略平面図である。図2は、実施形態の減圧乾燥装置1における4つの第2整流板40および昇降機構50を除いたチャンバ10内部を鉛直方向上側から見た様子を示す概略平面図である。図3は、図1のA−A線に沿う位置における減圧乾燥装置1の概略断面図である。
<1. Embodiment>
Drawing 1 is an outline top view showing signs that the inside of chamber 10 of vacuum drying device 1 in an embodiment was seen from the perpendicular direction upper part. FIG. 2 is a schematic plan view showing a state in which the inside of the chamber 10 excluding the four second rectifying plates 40 and the lifting mechanism 50 in the vacuum drying apparatus 1 of the embodiment is viewed from the upper side in the vertical direction. FIG. 3 is a schematic cross-sectional view of the vacuum drying apparatus 1 at a position along the line AA of FIG.

各図においては、減圧乾燥装置1の各部の位置関係を明確にするため、X軸、Y軸およびZ軸を付している。本例では、X軸方向およびY軸方向は水平方向であり、Z軸方向は鉛直方向である。各軸において、矢印の先端が向く方を+(プラス)方向とし、その逆方向を−(マイナス)方向とする。鉛直方向の上向きを「+Z方向」、下向きを「−Z方向」とする。下記に説明する各部の位置関係は一例であり、これに限定する趣旨のものではない。   In each figure, in order to clarify the positional relationship of each part of the reduced pressure drying apparatus 1, an X axis, a Y axis, and a Z axis are attached. In this example, the X-axis direction and the Y-axis direction are horizontal directions, and the Z-axis direction is a vertical direction. In each axis, the direction in which the tip of the arrow faces is the + (plus) direction, and the opposite direction is the-(minus) direction. The upward direction in the vertical direction is defined as “+ Z direction”, and the downward direction is defined as “−Z direction”. The positional relationship of each part demonstrated below is an example, and is not the meaning limited to this.

減圧乾燥装置1は、チャンバ10を備える。チャンバ10は、直方体状であり、内部に収容空間10Sを有する筐体である。減圧乾燥装置1は、この収容空間10Sに基板9を収容し、基板9の上面90(第1主面)に塗布された処理液を減圧によって乾燥させる減圧乾燥処理を行う。   The vacuum drying apparatus 1 includes a chamber 10. The chamber 10 has a rectangular parallelepiped shape and is a housing having an accommodation space 10S inside. The vacuum drying apparatus 1 stores the substrate 9 in the storage space 10S, and performs a vacuum drying process for drying the processing liquid applied to the upper surface 90 (first main surface) of the substrate 9 by reducing the pressure.

チャンバ10の+Y側の側壁の+Z側寄りの部分には、開閉部10Pが設けられている。開閉部10Pは、チャンバ10の外部とチャンバ10の収容空間10Sとの間で基板9を通すための開口を形成する。また、開閉部10Pは、当該開口を閉じることによって、外部と収容空間10Sとを遮断し、基板9の通過を不能とする。   An opening / closing part 10 </ b> P is provided in a portion near the + Z side of the + Y side wall of the chamber 10. The opening / closing part 10 </ b> P forms an opening for allowing the substrate 9 to pass between the outside of the chamber 10 and the accommodation space 10 </ b> S of the chamber 10. Further, the opening / closing part 10P closes the opening, thereby shutting off the outside and the accommodation space 10S and making the passage of the substrate 9 impossible.

チャンバ10は、収容空間10Sに面する底面100を有する。底面100は、水平面をなしている。底面100には、4つの凹部12が設けられている。4つの凹部12は、−X側に配された2つの−X側凹部12aと、+X側に配された2つの+X側凹部12bとを含む。   The chamber 10 has a bottom surface 100 facing the accommodation space 10S. The bottom surface 100 forms a horizontal plane. Four recesses 12 are provided on the bottom surface 100. The four recesses 12 include two -X side recesses 12a disposed on the -X side and two + X side recesses 12b disposed on the + X side.

凹部12の数量は、4つに限定されるものではなく、任意に変更してもよい。例えば、凹部12が1つだけ設けられていてもよい。   The number of the recesses 12 is not limited to four, and may be arbitrarily changed. For example, only one recess 12 may be provided.

以下、1つの凹部12に着目して説明する。凹部12は、底面100から−Z方向に凹む形状を有する。凹部12は、鉛直方向上側からみて、矩形状であるが、これは必須ではない。凹部12の深さ方向(Z軸方向)の底面120は、水平面となっている。凹部12は、底面120の外周部から鉛直方向上向きに起立する内壁面122を有する。内壁面122は、底面120に対して垂直となるように鉛直方向に延びる部分を有する。内壁面122が鉛直方向に延びていることにより、排気口14へ向かう雰囲気の流れを鉛直方向に整えることができる。   Hereinafter, the description will be given focusing on one concave portion 12. The recess 12 has a shape that is recessed from the bottom surface 100 in the −Z direction. The recess 12 has a rectangular shape when viewed from the upper side in the vertical direction, but this is not essential. The bottom surface 120 in the depth direction (Z-axis direction) of the recess 12 is a horizontal plane. The recess 12 has an inner wall surface 122 that rises upward in the vertical direction from the outer periphery of the bottom surface 120. Inner wall surface 122 has a portion extending in the vertical direction so as to be perpendicular to bottom surface 120. Since the inner wall surface 122 extends in the vertical direction, the flow of the atmosphere toward the exhaust port 14 can be adjusted in the vertical direction.

凹部12の底面120には排気口14が設けられている。すなわち、減圧乾燥装置1は、4つの排気口14を有している。排気口14は、凹部12を介して収容空間10Sに連続している。排気口14は、吸引機構20に接続されている。吸引機構20は、制御部70からの制御指令に応じて動作する不図示の真空ポンプを有する。吸引機構20は、制御指令に応じて、排気口14を介して収容空間10S内の雰囲気を吸引し、外部に排出する。   An exhaust port 14 is provided in the bottom surface 120 of the recess 12. That is, the vacuum drying apparatus 1 has four exhaust ports 14. The exhaust port 14 is continuous with the accommodation space 10 </ b> S via the recess 12. The exhaust port 14 is connected to the suction mechanism 20. The suction mechanism 20 has a vacuum pump (not shown) that operates according to a control command from the control unit 70. The suction mechanism 20 sucks the atmosphere in the accommodation space 10S through the exhaust port 14 and discharges it to the outside in accordance with the control command.

減圧乾燥装置1は、4つの第1整流板30(第1部材)を備えている。本例では、4つの凹部12各々の内側に第1整流板30が1つずつ配されている。4つの第1整流板30は、2つの−X側凹部12a各々の内側に1つずつ配されている2つの−X側第1整流板30aと、2つの+X側凹部12b各々の内側に1つずつ配されている2つの+X側第1整流板30bとを含む。   The vacuum drying apparatus 1 includes four first rectifying plates 30 (first members). In this example, one first rectifying plate 30 is arranged inside each of the four recesses 12. The four first rectifying plates 30 have two -X side first rectifying plates 30a arranged one by one inside each of the two -X side concave portions 12a and one inside each of the two + X side concave portions 12b. Two + X side first rectifying plates 30b arranged one by one.

各第1整流板30は、収容空間10Sにおける、排気口14とZ軸方向に重なる位置に配されている。第1整流板30は、板状の部材であり、各凹部12の深さ方向の開口よりも小さく、かつ、各排気口14の開口面積よりも大きい。第1整流板30は、水平面に平行な姿勢で配置されている。   Each first rectifying plate 30 is arranged at a position overlapping with the exhaust port 14 in the Z-axis direction in the accommodation space 10S. The first rectifying plate 30 is a plate-like member, which is smaller than the opening in the depth direction of each recess 12 and larger than the opening area of each exhaust port 14. The 1st baffle plate 30 is arrange | positioned with the attitude | position parallel to a horizontal surface.

各第1整流板30は、その全体が、対応する凹部12内に配されている。本例では、各第1整流板30の上面は、対応する凹部12の端部を含む外面102と同じ高さにある。各第1整流板30の上面は、対応する凹部12の内縁部である底面100のうち各凹部12の周りを囲む内縁部を含む外面102と面一となっている。このように、第1整流板30を凹部12内に設けることにより、収容空間10Sにおける基板9を配置可能な空間を大きくすることができる。また、収容空間10SのZ軸方向の長さ寸法を小さくすることができる。   Each of the first rectifying plates 30 is entirely disposed in the corresponding recess 12. In this example, the upper surface of each first rectifying plate 30 is at the same height as the outer surface 102 including the end of the corresponding recess 12. The upper surface of each first rectifying plate 30 is flush with the outer surface 102 including the inner edge portion surrounding each recess 12 in the bottom surface 100 that is the inner edge portion of the corresponding recess 12. Thus, by providing the first rectifying plate 30 in the recess 12, the space in which the substrate 9 can be placed in the accommodation space 10S can be increased. Moreover, the length dimension of the storage space 10S in the Z-axis direction can be reduced.

なお、第1整流板30の一部分が、凹部12内であって、外面102よりも底面100側(−Z側)にあってもよい。すなわち、第1整流板30の一部分が、凹部12外であって外面102よりも上側(+Z側)にあってもよい。このように一部分であっても、第1整流板30を凹部12内に入れることにより、チャンバ10のZ軸方向の長さを小さくすることができる。   A part of the first rectifying plate 30 may be in the recess 12 and closer to the bottom surface 100 (−Z side) than the outer surface 102. That is, a part of the first rectifying plate 30 may be outside the recess 12 and above the outer surface 102 (+ Z side). Thus, even if it is a part, the length of the chamber 10 in the Z-axis direction can be reduced by inserting the first rectifying plate 30 into the recess 12.

第1整流板30は、凹部12の矩形状の内縁部との間で、隙間が設けられている。詳細には、第1整流板30の−X側端部32aと凹部12の−X側縁部124aとの間に−X側隙間34aが設けられ、第1整流板30の+X側端部32bと凹部12の+X側縁部124bとの間に+X側隙間34bが設けられている。   The first rectifying plate 30 is provided with a gap between the rectangular inner edge of the recess 12. Specifically, a −X side gap 34 a is provided between the −X side end portion 32 a of the first rectifying plate 30 and the −X side edge portion 124 a of the recess 12, and the + X side end portion 32 b of the first rectifying plate 30. And a + X side gap 34b is provided between the + X side edge portion 124b of the recess 12.

減圧乾燥装置1は、4つの第2整流板40(第2部材)を備えている。4つの第2整流板40は、−X側から+X側に向けて、順に、第2整流板40a,40b,40c,40dを含む。これら4つの第2整流板40a−40dは、長方形の板状である。Y軸方向の長さ寸法は、4つの第2整流板40a−40dで同一である。また、X軸方向の幅寸法は、2つの第2整流板40a,40dで同一であり、2つの第2整流板40b,40cで同一である。2つの第2整流板40a,40dは、X軸方向に間隔をあけて配置されており、これらの間に2つの第2整流板40b,40cが配置されている。2つの第2整流板40b,40cも、X軸方向に間隔をあけて配置されている。   The reduced pressure drying apparatus 1 includes four second rectifying plates 40 (second members). The four second rectifying plates 40 include second rectifying plates 40a, 40b, 40c, and 40d in order from the −X side to the + X side. These four second rectifying plates 40a to 40d have a rectangular plate shape. The length in the Y-axis direction is the same for the four second rectifying plates 40a-40d. The width dimension in the X-axis direction is the same for the two second rectifying plates 40a and 40d, and is the same for the two second rectifying plates 40b and 40c. The two second rectifying plates 40a and 40d are arranged at an interval in the X-axis direction, and the two second rectifying plates 40b and 40c are arranged therebetween. The two second rectifying plates 40b and 40c are also arranged at an interval in the X-axis direction.

第2整流板40a−40dの各々は、第1整流板30の外周端部と外面102の双方に対して、Z軸方向に間隔をあけて、かつ、Z軸方向に重なる位置に設けられている。   Each of the second rectifying plates 40a to 40d is provided at a position that is spaced in the Z-axis direction and overlaps in the Z-axis direction with respect to both the outer peripheral end of the first rectifying plate 30 and the outer surface 102. Yes.

例えば、最も−X側にある第2整流板40aは、2つの−X側第1整流板30aの−X側端部32aおよびこれらに対向する2つの−X側凹部12aの−X側縁部124a(内縁部)を含む外面102部分とZ軸方向に重なる。すなわち、第2整流板40aは、2つの−X側凹部12aの−X側隙間34aの上方を覆っている。   For example, the second rectifying plate 40a that is closest to the -X side includes the -X side end portions 32a of the two -X side first rectifying plates 30a and the -X side edge portions of the two -X side concave portions 12a that oppose them. It overlaps with the outer surface 102 including 124a (inner edge) in the Z-axis direction. That is, the second rectifying plate 40a covers the upper part of the −X side gap 34a of the two −X side recesses 12a.

第2整流板40bは、2つの−X側第1整流板30aの+X側端部32bおよびこれらに対向する2つの+X側縁部124b(内縁部)を含む外面102部分とZ軸方向に重なる。第2整流板40bは、2つの−X側凹部12aの+X側隙間34bの上方を覆っている。   The second rectifying plate 40b overlaps in the Z-axis direction with the outer surface 102 portion including the + X side end portion 32b of the two -X side first rectifying plates 30a and the two + X side edge portions 124b (inner edge portions) facing these. . The second rectifying plate 40b covers the upper part of the + X side gap 34b of the two −X side recesses 12a.

第2整流板40cは、2つの+X側第1整流板30bの−X側端部32aおよびこれらに対向する2つの+X側凹部12bの−X側縁部124a(内縁部)を含む外面102部分とZ軸方向に重なる。第2整流板40cは、2つの+X側凹部12bの−X側隙間34aの上方を覆っている。   The second rectifying plate 40c is an outer surface 102 portion including two −X side end portions 32a of the + X side first rectifying plates 30b and −X side edge portions 124a (inner edge portions) of the two + X side concave portions 12b opposed thereto. And overlap in the Z-axis direction. The second rectifying plate 40c covers the upper part of the −X side gap 34a of the two + X side concave portions 12b.

最も+X側にある第2整流板40cは、2つの+X側第1整流板30bの+X側端部32bおよびこれらに対向する2つの+X側凹部12bの+X側縁部124bを含む外面102部分とZ軸方向に重なる。そして第2整流板40dは、2つの+X側凹部12bの+X側隙間34bの上方を覆っている。   The second rectifying plate 40c located on the most + X side includes the outer surface 102 portion including the + X side end portions 32b of the two + X side first rectifying plates 30b and the + X side edge portions 124b of the two + X side concave portions 12b opposed thereto. Overlapping in the Z-axis direction. The second rectifying plate 40d covers the upper part of the + X side gap 34b of the two + X side recesses 12b.

昇降機構50は、基板9を複数の第2整流板40の上方に支持するとともに、基板9を鉛直方向に昇降移動させる。昇降機構50は、6つの支持部52および昇降駆動部54を含む。   The lifting mechanism 50 supports the substrate 9 above the plurality of second rectifying plates 40 and moves the substrate 9 up and down in the vertical direction. The lifting mechanism 50 includes six support portions 52 and a lifting drive portion 54.

6つの支持部52は、第1整流板30に対して排気口14とは反対側に配置されている。3つの支持部52aおよび3つの支持部52bを含む。支持部52a,52b各々は、Y軸方向に延びるリフトプレート520と、1つのリフトプレート520上においてY軸方向に間隔をあけて配置されている複数のピン522を備えている。本例では、収容空間10Sにおける−X側寄りの位置、X軸方向中央の位置、+X側寄りの位置のそれぞれに、支持部52a,52bが1つずつ配置されている。鉛直方向上側から見て、第2整流板40a,40b間、第2整流板40b,40c間、第2整流板40c,40d間のそれぞれに、支持部52a,52bが1つずつ配置されている。基板9は、支持部52aまたは支持部52bが備える複数のピン522の上端部に支持されることによって、第1整流板30および第2整流板40に対して排気口14とは反対側の位置に保持される。   The six support portions 52 are disposed on the opposite side of the exhaust port 14 with respect to the first rectifying plate 30. Three support parts 52a and three support parts 52b are included. Each of the support portions 52a and 52b includes a lift plate 520 extending in the Y-axis direction, and a plurality of pins 522 arranged on the one lift plate 520 at intervals in the Y-axis direction. In this example, one support portion 52a, 52b is disposed at each of the position close to the −X side, the position near the center in the X-axis direction, and the position close to the + X side in the accommodation space 10S. When viewed from above in the vertical direction, one support portion 52a, 52b is disposed between each of the second rectifying plates 40a, 40b, between the second rectifying plates 40b, 40c, and between the second rectifying plates 40c, 40d. . The substrate 9 is supported by the upper end portions of the plurality of pins 522 provided in the support portion 52a or the support portion 52b, so that the substrate 9 is positioned on the side opposite to the exhaust port 14 with respect to the first rectifying plate 30 and the second rectifying plate 40. Retained.

昇降駆動部54は、3つの支持部52a各々および3つの支持部52b各々のリフトプレート520に接続されており、これらを個別に鉛直方向に昇降させる。昇降駆動部54の駆動力は、チャンバ10の底面100を貫通してリフトプレート520の下面に連結荒れた棒状の部材(不図示)を介して伝達されるとよい。昇降駆動部54の駆動力により、支持部52a各々および支持部52b各々が鉛直方向に昇降する。なお、6つの支持部52のうち2つ以上が、一体に昇降するように直接連結されていてもよい。例えば、3つの支持部52aを互いに連結して一体に昇降させてもよい。また、3つの支持部52bについても互いに連結させて一体に昇降させてもよい。このような場合、昇降駆動部54の動作軸を減らすことができるため、昇降駆動部54の構成を簡略化できる。   The raising / lowering drive part 54 is connected to the lift plate 520 of each of the three support parts 52a and each of the three support parts 52b, and raises / lowers these individually in the vertical direction. The driving force of the elevating drive unit 54 may be transmitted through a bar-like member (not shown) that penetrates the bottom surface 100 of the chamber 10 and is connected to the lower surface of the lift plate 520. Due to the driving force of the elevating drive unit 54, each of the support units 52a and each of the support units 52b is moved up and down in the vertical direction. Note that two or more of the six support portions 52 may be directly connected so as to move up and down integrally. For example, the three support parts 52a may be connected to each other and moved up and down integrally. Also, the three support parts 52b may be connected to each other and lifted up and down integrally. In such a case, since the operation axis of the elevating drive unit 54 can be reduced, the configuration of the elevating drive unit 54 can be simplified.

支持部52aが備える複数のピン522は、支持部52bが備える複数のピン522とはY軸方向の位置が異なるように配置されている。これは、様々な大きさの基板9に対応するためである。なお、各ピン522の位置は、これに限定されるものではなく、任意に設定してもよい。   The plurality of pins 522 provided in the support part 52a are arranged so that the positions in the Y-axis direction are different from the plurality of pins 522 provided in the support part 52b. This is to cope with substrates 9 of various sizes. In addition, the position of each pin 522 is not limited to this, You may set arbitrarily.

例えば、−X側寄りの支持部52aが備える複数のピン522は、Y軸方向に配された複数の第1ピンの一例である。X軸方向中央の支持部52aが備える複数のピン522は、−X側寄りの支持部52aが備える複数のピン522に対してX軸方向に間隔をあけて、Y軸方向に配された複数の第2ピンの一例である。第2整流板40bは、これら複数の第1ピンおよび複数の第2ピンの間に配された第2部材の一例である。   For example, the plurality of pins 522 provided in the support portion 52a closer to the −X side is an example of a plurality of first pins arranged in the Y-axis direction. The plurality of pins 522 provided in the support portion 52a at the center in the X-axis direction are arranged in the Y-axis direction at intervals in the X-axis direction with respect to the plurality of pins 522 provided in the support portion 52a closer to the −X side. This is an example of the second pin. The second rectifying plate 40b is an example of a second member disposed between the plurality of first pins and the plurality of second pins.

また、X軸方向中央の支持部52aが備える複数のピン522は複数の第1ピンの一例であり、+X側寄りの支持部52aが備える複数のピン522は複数の第2ピンの一例である。第2整流板40cは、これら複数の第1ピンおよび第2ピンの間に配された第2部材の一例である。   Further, the plurality of pins 522 provided in the support portion 52a at the center in the X-axis direction is an example of a plurality of first pins, and the plurality of pins 522 provided in the support portion 52a closer to the + X side is an example of a plurality of second pins. . The 2nd baffle plate 40c is an example of the 2nd member distribute | arranged between these some 1st pins and 2nd pins.

減圧乾燥装置1は、制御部70を備えている。制御部70は、各種演算処理を行うCPU、基本プログラムを記憶する読み出し専用のメモリであるROM、各種情報を記憶する読み書き自在のメモリであるRAMを備える、一般的なコンピュータとして構成されていてもよい。制御部70は、制御用アプリケーション(プログラム)または各種データ等を記憶する補助記憶装置を備えていてもよい。CPUが制御用アプリケーションに従って動作することにより、各種機能が実現されるとよい。制御部70は、開閉部10P、吸引機構20および昇降駆動部54に通信可能に接続されており、これらに制御指令を送信することによって、これらの動作を制御する。   The vacuum drying apparatus 1 includes a control unit 70. The control unit 70 may be configured as a general computer including a CPU that performs various arithmetic processes, a ROM that is a read-only memory that stores basic programs, and a RAM that is a readable and writable memory that stores various information. Good. The control unit 70 may include an auxiliary storage device that stores a control application (program) or various data. Various functions may be realized by the CPU operating according to the control application. The control unit 70 is communicably connected to the opening / closing unit 10P, the suction mechanism 20, and the elevating drive unit 54, and controls these operations by transmitting control commands thereto.

<動作説明>
上記構成の減圧乾燥装置1の減圧乾燥処理における動作を説明する。なお、特に断らない限り、減圧乾燥装置1の動作は、制御部70からの制御指令に応じて実行されるものとする。
<Description of operation>
The operation in the vacuum drying process of the vacuum drying apparatus 1 having the above configuration will be described. Unless otherwise specified, the operation of the reduced pressure drying apparatus 1 is executed in accordance with a control command from the control unit 70.

図4は、処理対象の基板9が搬入されたときの減圧乾燥装置1を示す概略側面図である。減圧乾燥処理は、処理対象の基板9(上面90に処理液が塗布された基板9)を外部からチャンバ10の収容空間10Sに搬入する、搬入工程S1を含む。   FIG. 4 is a schematic side view showing the reduced pressure drying apparatus 1 when the substrate 9 to be processed is loaded. The reduced-pressure drying process includes a loading process S1 in which the substrate 9 to be processed (the substrate 9 with the processing liquid applied to the upper surface 90) is loaded into the accommodation space 10S of the chamber 10 from the outside.

搬入工程S1では、制御部70が、処理対象の基板9の支持に対応した複数の支持部52(図4に示す例では、3つの支持部52a)を、所定の鉛直位置に配置する。その後、制御部70は、開閉部10Pを開ける。開放された開閉部10Pを通じて、不図示の搬送装置が基板9を収容空間10Sに搬入する。そして、不図示の搬送装置が、基板9を当該複数の支持部52の各ピン522上に載置する。これにより、基板9が上位置L1(第1基板位置)にて保持された状態となる。   In the carry-in step S1, the control unit 70 arranges a plurality of support units 52 (three support units 52a in the example shown in FIG. 4) corresponding to the support of the substrate 9 to be processed at a predetermined vertical position. Thereafter, the control unit 70 opens the opening / closing unit 10P. A transport device (not shown) carries the substrate 9 into the accommodation space 10S through the opened opening / closing part 10P. Then, a transfer device (not shown) places the substrate 9 on each pin 522 of the plurality of support portions 52. As a result, the substrate 9 is held at the upper position L1 (first substrate position).

搬送装置は、例えば、基板9の下面を支持するY軸方向に延びる複数のフィンガー部80を備えるとよい。複数のフィンガー部80は、−X側寄りの位置に配された支持部52bおよび中央の位置に配された支持部52aの間に進入する1つ以上のフィンガー部80と、中央の位置に配された支持部52bと+X側の位置に配された支持部52aの間の位置に進入可能な1つ以上のフィンガー部80とを含むとよい(図4参照)。基板9を支持する各フィンガー部80を、開閉部10Pを介して収容空間10Sに進入させ、その後、各フィンガー部80を対応する各支持部52間で下方に移動させる。これにより、各フィンガー部80と各支持部52とが干渉することなく、基板9が各支持部52に受け渡される。   The transport device may include, for example, a plurality of finger portions 80 extending in the Y-axis direction that support the lower surface of the substrate 9. The plurality of finger portions 80 are arranged at a central position with one or more finger portions 80 entering between the support portion 52b disposed at a position closer to the −X side and the support portion 52a disposed at a central position. It is preferable to include one or more finger portions 80 capable of entering a position between the support portion 52b and the support portion 52a disposed on the + X side position (see FIG. 4). Each finger part 80 that supports the substrate 9 enters the accommodating space 10S via the opening / closing part 10P, and then each finger part 80 is moved downward between the corresponding support parts 52. Thereby, the board | substrate 9 is delivered to each support part 52, without each finger part 80 and each support part 52 interfering.

図5は、排気を開始したときの減圧乾燥装置1を示す概略側面図である。搬入工程S1が完了すると、排気工程S2が行われる。排気工程S2では、制御部70が吸引機構20を作動させることにより、収容空間10Sの雰囲気を複数の排気口14から排出する。   FIG. 5 is a schematic side view showing the vacuum drying apparatus 1 when exhaust is started. When the carry-in process S1 is completed, an exhaust process S2 is performed. In the exhaust process S <b> 2, the control unit 70 operates the suction mechanism 20 to discharge the atmosphere of the accommodation space 10 </ b> S from the plurality of exhaust ports 14.

図5に示すように、収容空間10Sの雰囲気は、排気口14に向かって移動する。ここで、収容空間10Sの雰囲気の排気口14に向かう移動の方向は、第2整流板40a−40dによって変更される。詳細には、第2整流板40a−40上の雰囲気の進行方向は、水平面であるこれらの上面によって、それらの端部に向かう水平方向に変更される。そして、雰囲気は、第2整流板40a,40bの隙間、第2整流板40b,40cの隙間、および、収容空間10Sの四方を取り囲む壁面104と第2整流板40a−40d各々の端部の隙間を下向きに通過して、第2整流板40a−40dの下方に移動する。   As shown in FIG. 5, the atmosphere of the accommodation space 10 </ b> S moves toward the exhaust port 14. Here, the direction of movement toward the exhaust port 14 in the atmosphere of the accommodation space 10S is changed by the second rectifying plates 40a to 40d. Specifically, the traveling direction of the atmosphere on the second rectifying plates 40a-40 is changed in the horizontal direction toward the end portions thereof by these upper surfaces which are horizontal surfaces. The atmosphere includes a gap between the second rectifying plates 40a and 40b, a gap between the second rectifying plates 40b and 40c, and a gap between the wall surface 104 surrounding the four sides of the accommodation space 10S and the end portions of the second rectifying plates 40a to 40d. Is moved downward and moved below the second rectifying plates 40a-40d.

雰囲気の排気口14へ向かう移動の方向は、複数の第1整流板30によって変更される。詳細には、第2整流板40a−40dの下方へ移動した雰囲気の進行方向は、水平面である複数の第1整流板30(−X側第1整流板30aおよび+X側第1整流板30b)の上面によって、それらの端部(−X側端部32aおよび+X側端部32bを含む。)に向かう水平方向に変更される。また、第2整流板40a−40dの下方へ移動した雰囲気の進行方向は、水平面である底面100(外面102)によって、その端部である凹部12の内縁部に向かう水平方向に変更される。その後、雰囲気は、凹部12の内縁部(−X側縁部124aおよび+X側縁部124bを含む。)と第1整流板30の周端部との隙間(−X側隙間34aおよび+X側隙間34bを含む。)を下向きに移動することにより、各凹部12内に進入する。そして、各凹部12内の排気口14を介して外部に排出される。   The direction of movement of the atmosphere toward the exhaust port 14 is changed by the plurality of first rectifying plates 30. Specifically, the traveling direction of the atmosphere moved downward from the second rectifying plates 40a to 40d is a plurality of first rectifying plates 30 (−X side first rectifying plate 30a and + X side first rectifying plate 30b) that are horizontal surfaces. Are changed in the horizontal direction toward those end portions (including the −X side end portion 32a and the + X side end portion 32b). Moreover, the advancing direction of the atmosphere moved to the lower side of the second rectifying plates 40a to 40d is changed to a horizontal direction toward the inner edge portion of the concave portion 12 which is an end portion thereof by the bottom surface 100 (outer surface 102) which is a horizontal surface. Thereafter, the atmosphere is a gap between the inner edge of the recess 12 (including the −X side edge 124a and the + X side edge 124b) and the peripheral end of the first rectifying plate 30 (−X side gap 34a and + X side gap). 34b.) Is moved downward to enter each recess 12. And it is discharged | emitted outside via the exhaust port 14 in each recessed part 12. FIG.

排気工程S2の開始直後は、収容空間10Sに多くの雰囲気が存在するため、排気口14付近で雰囲気の流速が大きくなる。本実施形態では、この排気工程S2の開始直後は、このような流速が速くなる排気口14付近から離れた第1基板位置L1に基板9を配置することによって、上面90に塗布された処理液の表面が乱れたり、突沸したりすることを抑制できる。これによって、乾燥むらの発生を軽減できる。   Immediately after the start of the exhaust process S2, since there are many atmospheres in the accommodation space 10S, the flow velocity of the atmosphere increases in the vicinity of the exhaust port 14. In the present embodiment, immediately after the start of the evacuation step S2, the processing liquid applied to the upper surface 90 is disposed by disposing the substrate 9 at the first substrate position L1 away from the vicinity of the exhaust port 14 where the flow velocity increases. It is possible to prevent the surface of the material from being disturbed or bumped. This can reduce the occurrence of uneven drying.

図6は、排気を開始してから所定時間経過したときの減圧乾燥装置1を示す概略側面図である。排気工程S2の間、下降工程S3が行われる。下降工程S3では、制御部70が、排気を開始してから所定時間が経過した後に、複数の支持部52を下降させる。これによって、基板Wが上位置L1から下位置L2(第2基板位置)まで移動する。下位置L2は、上位置L1よりも鉛直方向下側であって、排気口14に近い位置である。   FIG. 6 is a schematic side view showing the vacuum drying apparatus 1 when a predetermined time has elapsed since the start of exhaust. During the exhaust process S2, a descending process S3 is performed. In the descending step S3, the control unit 70 lowers the plurality of support units 52 after a predetermined time has elapsed since the start of exhaust. As a result, the substrate W moves from the upper position L1 to the lower position L2 (second substrate position). The lower position L2 is a position below the upper position L1 in the vertical direction and close to the exhaust port 14.

下位置L2は、上位置L1よりも排気口14に近いため、雰囲気が相対的に薄く、気圧が低い。このため、基板9を下位置L2に配置することによって、基板9の処理液を効率的に乾燥させることができる。下位置L2に配置したとしても、基板9の周囲の雰囲気の流速は比較的小さいため、処理液の表面の乱れや処理液の突沸が起こる可能性は低い。   Since the lower position L2 is closer to the exhaust port 14 than the upper position L1, the atmosphere is relatively thin and the atmospheric pressure is low. For this reason, by arrange | positioning the board | substrate 9 in the lower position L2, the process liquid of the board | substrate 9 can be dried efficiently. Even if it is arranged at the lower position L2, the flow velocity of the atmosphere around the substrate 9 is relatively small, so that the possibility of disturbance of the surface of the processing liquid and bumping of the processing liquid is low.

図7は、処理後の基板9を外部に搬出させるときの減圧乾燥装置1を示す概略側面図である。排気工程S3が完了すると、搬出工程S4が行われる。搬出工程S4では、制御部70が、排気を開始してから所定時間が経過した後、排気を停止させる。これによって、収容空間10Sに残存する雰囲気の流れは停止される。そして、収容空間10Sの大気開放が行われることによって、収容空間10S内の気圧が戻される。収容空間10Sの大気開放は、排気口14を介して行われてもよいし、あるいは、不図示の吸気口を介して行われてもよい。   FIG. 7 is a schematic side view showing the vacuum drying apparatus 1 when the substrate 9 after processing is carried out to the outside. When the exhaust process S3 is completed, an unloading process S4 is performed. In the unloading step S4, the control unit 70 stops the exhaust after a predetermined time has elapsed since the start of the exhaust. Thereby, the flow of the atmosphere remaining in the accommodation space 10S is stopped. And the atmospheric pressure in the accommodation space 10S is returned by releasing the accommodation space 10S to the atmosphere. The opening of the accommodation space 10S to the atmosphere may be performed via the exhaust port 14 or may be performed via an intake port (not shown).

搬出工程S4では、制御部70が、基板9を支持している複数の支持部52を上昇させることによって、基板9を下位置L2から上位置L1に移動させる。なお、収容空間10Sの大気開放は、基板9を下位置L2から上位置L1に移動させた後、あるいは、基板9を下位置L2から上位置L1に向けて移動させている最中に行われてもよい。   In the unloading step S4, the control unit 70 moves the substrate 9 from the lower position L2 to the upper position L1 by raising the plurality of support units 52 that support the substrate 9. Note that the accommodation space 10S is released to the atmosphere after the substrate 9 is moved from the lower position L2 to the upper position L1, or while the substrate 9 is moved from the lower position L2 toward the upper position L1. May be.

また、制御部70が開閉部10Pを開けると、不図示の搬送装置が開放された開閉部10Pを介して上位置L1に支持されている基板9を受け取り、収容空間10Sから当該基板9を搬出する。   When the control unit 70 opens the opening / closing unit 10P, the substrate 9 supported at the upper position L1 is received via the opening / closing unit 10P opened by a transfer device (not shown), and the substrate 9 is unloaded from the accommodation space 10S. To do.

図5および図6に示すように、減圧乾燥装置1では、チャンバ10の底面100に設けられた掘り込みである凹部12に排気口14が設けられている。このため、凹部12の開口は排気口14よりも大きいため、排気口14の見かけ上の開口面積を大きくすることができる。これにより、排気工程S2にて、排気口14へ向かう雰囲気の流速を低下させることができる。   As shown in FIGS. 5 and 6, in the vacuum drying apparatus 1, the exhaust port 14 is provided in the concave portion 12 that is a dug provided in the bottom surface 100 of the chamber 10. For this reason, since the opening of the recessed part 12 is larger than the exhaust port 14, the apparent opening area of the exhaust port 14 can be enlarged. Thereby, the flow velocity of the atmosphere toward the exhaust port 14 can be reduced in the exhaust process S2.

図5および図6に示すように、減圧乾燥装置1では、排気口14の上方を第1整流板30で覆っている。この第1整流板30によって、収容空間10Sの第1整流板30より上方の雰囲気が排気口14へ直接吸い込まれることを妨げることができる。第1整流板30の周囲から第1整流板30の下方に雰囲気が吸い込まれるため、基板9から見た見かけ上の雰囲気の吸い込み口を拡大できるとともに、分散させることができる。これにより、基板9周囲の雰囲気の流速を低下できる。   As shown in FIGS. 5 and 6, in the vacuum drying apparatus 1, the upper side of the exhaust port 14 is covered with a first rectifying plate 30. The first rectifying plate 30 can prevent the atmosphere above the first rectifying plate 30 in the accommodation space 10 </ b> S from being directly sucked into the exhaust port 14. Since the atmosphere is sucked from the periphery of the first rectifying plate 30 to the lower side of the first rectifying plate 30, the suction port of the apparent atmosphere seen from the substrate 9 can be enlarged and dispersed. Thereby, the flow velocity of the atmosphere around the substrate 9 can be reduced.

図5および図6に示すように、減圧乾燥装置1では、凹部12の内縁部と第1整流板30の端部との隙間(−X側隙間34aおよび+X側隙間34b)の上方を、第2整流板40(第2整流板40a−40d)で覆っている。これにより、第2整流板40直上の雰囲気が、凹部12と第1整流板30の隙間に雰囲気が直接吸い込まれることを妨げることができる。第2整流板40の周囲から第2整流板40の下方に吸い込まれるため、基板9から見た見かけ上の雰囲気の吸い込み口を拡大できるとともに、分散させることができる。これにより、基板9周囲の雰囲気の流速を低下できる。   As shown in FIGS. 5 and 6, in the reduced pressure drying apparatus 1, the upper part of the gap (−X side gap 34 a and + X side gap 34 b) between the inner edge of the recess 12 and the end of the first rectifying plate 30 is Two rectifying plates 40 (second rectifying plates 40a to 40d) are covered. Thereby, the atmosphere immediately above the second rectifying plate 40 can prevent the atmosphere from being directly sucked into the gap between the recess 12 and the first rectifying plate 30. Since the air is sucked from the periphery of the second rectifying plate 40 to the lower side of the second rectifying plate 40, the suction port of the apparent atmosphere seen from the substrate 9 can be enlarged and dispersed. Thereby, the flow velocity of the atmosphere around the substrate 9 can be reduced.

図5および図6に示すように、第2整流板40と第1整流板30の隙間、第2整流板40と底面100(外面102)の隙間、第1整流板30と底面120の隙間は、水平方向に広がっている。このため、収容空間10Sの雰囲気が、鉛直方向下側に設けられた排気口14に到達するまでにこれらの隙間を通ることで、気流の方向が鉛直方向と水平方向とにジグザグ状に変更される。この場合、第1整流板30および第2整流板40を設けないときと比べて、雰囲気が流れる通路の総距離を長くすることができる。これによって、雰囲気の流速の低下を図ることができる。   As shown in FIGS. 5 and 6, the gap between the second rectifying plate 40 and the first rectifying plate 30, the gap between the second rectifying plate 40 and the bottom surface 100 (outer surface 102), and the gap between the first rectifying plate 30 and the bottom surface 120 are as follows. Spread horizontally. For this reason, by passing through these gaps until the atmosphere of the accommodation space 10S reaches the exhaust port 14 provided on the lower side in the vertical direction, the direction of the airflow is changed in a zigzag shape between the vertical direction and the horizontal direction. The In this case, compared to the case where the first rectifying plate 30 and the second rectifying plate 40 are not provided, the total distance of the passage through which the atmosphere flows can be increased. Thereby, the flow velocity of the atmosphere can be reduced.

第1整流板30、第2整流板40を平坦な板状とすることにより、これらの表面で気流が乱れることを抑制できる。また、チャンバ10の底面100(外面102)および凹部12の底面120も平面とすることにより、これらの面で気流が乱れることを抑制できる。   By making the 1st rectifying plate 30 and the 2nd rectifying plate 40 into flat plate shape, it can suppress that an airflow is disturb | confused in these surfaces. In addition, by making the bottom surface 100 (outer surface 102) of the chamber 10 and the bottom surface 120 of the recess 12 flat, it is possible to prevent the airflow from being disturbed on these surfaces.

<2. 変形例>
以上、実施形態について説明してきたが、本発明は上記のようなものに限定されるものではなく、様々な変形が可能である。
<2. Modification>
Although the embodiment has been described above, the present invention is not limited to the above, and various modifications are possible.

上記実施形態では、排気口14は、凹部12の凹部の深さ方向の底面120に設けられている。しかしながら、凹部12の内壁面122に設けられていてもよい。   In the above embodiment, the exhaust port 14 is provided on the bottom surface 120 in the depth direction of the recess of the recess 12. However, it may be provided on the inner wall surface 122 of the recess 12.

上記実施形態では、排気口14は、鉛直方向下側の底面100に設けられた凹部12内に設けられている。排気口14は、収容空間10Sに面しており、底面100の外周端部から鉛直方向上向きに起立する壁面104に設けられていてもよい。   In the above embodiment, the exhaust port 14 is provided in the recess 12 provided in the bottom surface 100 on the lower side in the vertical direction. The exhaust port 14 faces the accommodation space 10 </ b> S, and may be provided on the wall surface 104 that stands vertically upward from the outer peripheral end of the bottom surface 100.

図8は、変形例に係る減圧乾燥装置1Aを示す図である。上記実施形態では、凹部12の内部に第1整流板30が配置されている。図8に示す減圧乾燥装置1Aのように、凹部12の上方(凹部12の外部)に第1整流板30を設けてもよい。また、減圧乾燥装置1Aのように、第2整流板40(第2整流板40a−40d)を第1整流板30よりも下側(排気口14に近い側)に配置してもよい。第2整流板40は、第1整流板30の端部(−X側端部32aまたは+X側端部32b)および凹部12の内縁部(−X側凹部12aまたは+X側凹部12b)とZ軸方向に重なる位置に配置されている。第2整流板40をこのように設けることによっても、第1整流板30と凹部12の隙間に雰囲気が吸い込まれることを妨げることができる。   FIG. 8 is a view showing a vacuum drying apparatus 1A according to a modification. In the above embodiment, the first rectifying plate 30 is disposed inside the recess 12. As in the reduced-pressure drying apparatus 1A shown in FIG. 8, the first rectifying plate 30 may be provided above the recess 12 (outside the recess 12). Moreover, you may arrange | position the 2nd baffle plate 40 (2nd baffle plate 40a-40d) below the 1st baffle plate 30 (side near the exhaust port 14) like the decompression drying apparatus 1A. The second rectifying plate 40 includes an end portion (−X side end portion 32a or + X side end portion 32b) of the first rectifying plate 30 and an inner edge portion (−X side recessed portion 12a or + X side recessed portion 12b) of the recess 12 and the Z axis. It is arranged at a position overlapping in the direction. Providing the second rectifying plate 40 in this way can also prevent the atmosphere from being sucked into the gap between the first rectifying plate 30 and the recess 12.

この発明は詳細に説明されたが、上記の説明は、すべての局面において、例示であって、この発明がそれに限定されるものではない。例示されていない無数の変形例が、この発明の範囲から外れることなく想定され得るものと解される。上記各実施形態及び各変形例で説明した各構成は、相互に矛盾しない限り適宜組み合わせたり、省略したりすることができる。   Although the present invention has been described in detail, the above description is illustrative in all aspects, and the present invention is not limited thereto. It is understood that countless variations that are not illustrated can be envisaged without departing from the scope of the present invention. The configurations described in the above embodiments and modifications can be appropriately combined or omitted as long as they do not contradict each other.

1,1A 減圧乾燥装置
10 チャンバ(筐体)
100 底面(第1面)
10S 収容空間
12 凹部
12a −X側凹部
12b +X側凹部
120 底面
122 内壁面
124a −X側縁部(内縁部)
124b +X側縁部(内縁部)
14 排気口
20 吸引機構
30,30a,30b 第1整流部材
32a −X側端部
32b +X側端部
34a −X側隙間
34b +X側隙間
40,40a,40b,40c,40d 第2整流板
50 昇降機構
52,52a,52b 支持部(基板保持部)
520 リフトプレート
522 ピン
54 昇降駆動部(移動駆動部)
70 制御部
9 基板
90 上面
L1 上位置(第1基板位置)
L2 下位置(第2基板位置)
1,1A vacuum drying equipment 10 chamber (housing)
100 Bottom (first side)
10S accommodation space 12 concave portion 12a -X side concave portion 12b + X side concave portion 120 bottom surface 122 inner wall surface 124a -X side edge portion (inner edge portion)
124b + X side edge (inner edge)
14 Exhaust port 20 Suction mechanism 30, 30a, 30b First rectifying member 32a -X side end 32b + X side end 34a -X side gap 34b + X side gap 40, 40a, 40b, 40c, 40d Second rectifying plate 50 Mechanism 52, 52a, 52b Support part (substrate holding part)
520 Lift plate 522 Pin 54 Elevating drive unit (moving drive unit)
70 Control unit 9 Substrate 90 Upper surface L1 Upper position (first substrate position)
L2 lower position (second board position)

Claims (11)

第1主面および第2主面を有し前記第1主面に処理液を有する基板を、減圧によって乾燥させる減圧乾燥装置であって、
前記基板を収容可能な収容空間を有するとともに前記収容空間に面する第1面を有する筐体と、
第1面に設けられている凹部と、
前記凹部の深さ方向の底面に設けられている排気口と、
前記排気口から前記収容空間の雰囲気を吸引する吸引機構と、
前記収容空間における、前記排気口と前記深さ方向に重なる位置に配される第1部材と、
前記収容空間における、前記第1部材の端部および前記凹部の内縁部と前記深さ方向に間隔をおいて重なる位置に配される第2部材と、
前記収容空間における、前記第1部材および前記第2部材に対して前記排気口とは反対側の位置に前記基板を保持する基板保持部と、
を備える、減圧乾燥装置。
A vacuum drying apparatus for drying a substrate having a first main surface and a second main surface and having a treatment liquid on the first main surface by reduced pressure,
A housing having a housing space capable of housing the substrate and having a first surface facing the housing space;
A recess provided in the first surface;
An exhaust port provided on the bottom surface in the depth direction of the recess;
A suction mechanism for sucking the atmosphere of the accommodation space from the exhaust port;
A first member disposed in a position overlapping with the exhaust port in the depth direction in the accommodation space;
A second member disposed at a position overlapping the end portion of the first member and the inner edge of the recess in the accommodation space with an interval in the depth direction;
A substrate holding portion for holding the substrate at a position opposite to the exhaust port with respect to the first member and the second member in the accommodation space;
A vacuum drying apparatus comprising:
請求項1の減圧乾燥装置であって、
前記基板保持部は、前記基板の前記第2主面を支持する複数のピンを含む、減圧乾燥装置。
The vacuum drying apparatus according to claim 1,
The substrate holding unit is a vacuum drying apparatus including a plurality of pins that support the second main surface of the substrate.
請求項2の減圧乾燥装置であって、
前記複数のピンは、
第1方向に配される複数の第1ピンと、
前記複数の第1ピンから前記第1方向に直交する第2方向に間隔をあけて前記第1方向に配される複数の第2ピンと、
を含み、
前記第2部材は、前記複数の第1ピンと前記複数の第2ピンとの間に配されている、減圧乾燥装置。
The reduced-pressure drying apparatus according to claim 2,
The plurality of pins are:
A plurality of first pins arranged in a first direction;
A plurality of second pins arranged in the first direction at intervals in a second direction orthogonal to the first direction from the plurality of first pins;
Including
The reduced pressure drying apparatus, wherein the second member is disposed between the plurality of first pins and the plurality of second pins.
請求項1から請求項3のいずれか1項の減圧乾燥装置であって、
前記複数のピンを前記深さ方向に移動させることによって、前記基板を第1基板位置と、前記第1基板位置よりも前記排気口に近い第2基板位置との間で移動させる移動駆動部、
をさらに備える、減圧乾燥装置。
The vacuum drying apparatus according to any one of claims 1 to 3,
A moving drive unit that moves the plurality of pins in the depth direction to move the substrate between a first substrate position and a second substrate position closer to the exhaust port than the first substrate position;
A vacuum drying apparatus further comprising:
請求項1から請求項4のいずれか1項の減圧乾燥装置であって、
前記移動駆動部は、前記吸引機構が前記排気口を介して雰囲気の吸引を開始した後、前記基板を前記第1基板位置から前記第2基板位置に移動させる、減圧乾燥装置。
The vacuum drying apparatus according to any one of claims 1 to 4,
The movement driving unit is a reduced pressure drying apparatus that moves the substrate from the first substrate position to the second substrate position after the suction mechanism starts sucking the atmosphere through the exhaust port.
請求項1から請求項5のいずれか1項の減圧乾燥装置であって、
前記第1部材が前記第2部材と前記排気口との間に設けられている、減圧乾燥装置。
The vacuum drying apparatus according to any one of claims 1 to 5,
The reduced pressure drying apparatus, wherein the first member is provided between the second member and the exhaust port.
請求項6の減圧乾燥装置であって、
前記第1部材の少なくとも一部が、前記凹部内にある、減圧乾燥装置。
The reduced-pressure drying apparatus according to claim 6,
The reduced pressure drying apparatus, wherein at least a part of the first member is in the recess.
請求項7の減圧乾燥装置であって、
前記第1部材の全部が、前記凹部内にある、減圧乾燥装置。
The vacuum drying apparatus according to claim 7,
The reduced-pressure drying apparatus, wherein the first member is entirely in the recess.
請求項7または請求項8の減圧乾燥装置であって、
前記第1部材の前記端部が、前記内縁部と面一である、減圧乾燥装置。
The reduced-pressure drying apparatus according to claim 7 or 8,
The vacuum drying apparatus, wherein the end portion of the first member is flush with the inner edge portion.
請求項1から請求項9のいずれか1項の減圧乾燥装置であって、
前記保持部は、前記基板を前記第1主面が鉛直方向上向きとなる水平姿勢で保持し、
前記第1部材、前記第2部材および前記排気口は、前記保持部に保持される前記基板の前記第2主面側に設けられている、減圧乾燥装置。
The reduced-pressure drying apparatus according to any one of claims 1 to 9,
The holding unit holds the substrate in a horizontal posture in which the first main surface is vertically upward,
The reduced pressure drying apparatus, wherein the first member, the second member, and the exhaust port are provided on the second main surface side of the substrate held by the holding portion.
第1主面および第2主面を有し前記第1主面に処理液を有する基板を、減圧によって乾燥させる減圧乾燥方法であって、
(a)収容空間に面する第1面を有しており、筐体に、前記基板を保持する工程と、
(b)前記(a)工程の後、前記第1面に設けられている凹部の深さ方向の底面に設けられている排気口から、前記収容空間の雰囲気を吸引する工程と、
(c)前記(b)工程において、前記収容空間における、前記排気口と前記深さ方向に重なる位置に配される第1部材により、前記排気口に向かう気流の方向を変更する工程と、
(d)前記(b)工程において、前記収容空間における、前記第1部材の端部および前記凹部の内縁部の双方と前記深さ方向に間隔をおいて重なる位置に配される第2部材により、前記排気口に向かう気流の方向を変更する工程と、
を含む、減圧乾燥方法。
A reduced-pressure drying method for drying a substrate having a first main surface and a second main surface and having a treatment liquid on the first main surface by reduced pressure,
(A) having a first surface facing the accommodation space, and holding the substrate in a housing;
(B) after the step (a), sucking the atmosphere of the housing space from the exhaust port provided in the bottom surface in the depth direction of the recess provided in the first surface;
(C) In the step (b), a step of changing a direction of an air flow toward the exhaust port by a first member disposed in a position overlapping with the exhaust port in the depth direction in the accommodation space;
(D) In the step (b), by the second member disposed at a position overlapping with both the end portion of the first member and the inner edge portion of the concave portion in the depth direction in the accommodation space. Changing the direction of the air flow toward the exhaust port;
A vacuum drying method comprising:
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