TW201924929A - 陶瓷元件及其製造方法 - Google Patents

陶瓷元件及其製造方法 Download PDF

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TW201924929A
TW201924929A TW106142946A TW106142946A TW201924929A TW 201924929 A TW201924929 A TW 201924929A TW 106142946 A TW106142946 A TW 106142946A TW 106142946 A TW106142946 A TW 106142946A TW 201924929 A TW201924929 A TW 201924929A
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Taiwan
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metal layer
item
ceramic element
patterned metal
element according
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TW106142946A
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TWI649193B (zh
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黃萌祺
高端環
林冠廷
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財團法人工業技術研究院
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Priority to TW106142946A priority Critical patent/TWI649193B/zh
Priority to US15/842,902 priority patent/US10669209B2/en
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Publication of TW201924929A publication Critical patent/TW201924929A/zh

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  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrochemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Chemically Coating (AREA)
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Abstract

一種陶瓷元件，包括陶瓷材料、圖案化金屬結構與表面活化材料。陶瓷材料的表面至少包括非共平面的第一表面與第二表面，且在陶瓷材料的表面上具有多個凹陷。圖案化金屬結構設置於第一表面與第二表面上。表面活化材料設置在凹陷的表面上，且位於陶瓷材料與圖案化金屬結構的介面。

Description

陶瓷元件及其製造方法
本揭露是有關於一種元件及其製造方法，且特別是有關於一種陶瓷元件及其製造方法。
目前，在具有金屬線路的陶瓷元件的製程中，金屬線路具有較大的位置精度誤差。
舉例來說，在目前陶瓷濾波器的製作方法中，會先在陶瓷材料上沾銀漿並藉由快速旋轉方式，將銀漿塗佈在陶瓷材料上與陶瓷材料中的貫穿孔表面上，再藉由高溫燒結使銀固化於陶瓷材料上與貫穿孔表面上。接著，使用超精密加工製程研磨去除預定進行圖案化的表面上的銀金屬，再進行銀漿網印與銀漿燒結，完成濾波器的電極與金屬結構面。
上述方法是使用銀漿網印技術與金屬漿料燒結技術，製作陶瓷濾波器的金屬線路。然而，由於金屬線路會因高溫燒結造成線路尺寸與位置的偏差(約有5%至14%的位置精度誤差)，因而導致天線頻率偏移量大，後續需倚靠大量人工進行手動天線修整。
本揭露提供一種陶瓷元件及其製造方法，其可使得金屬線路具有良好的位置精度。
本揭露提出一種陶瓷元件，包括陶瓷材料、圖案化金屬結構與表面活化材料。陶瓷材料的表面至少包括非共平面的第一表面與第二表面，且在陶瓷材料的表面上具有多個凹陷。圖案化金屬結構設置於第一表面與第二表面上。表面活化材料設置在凹陷的表面上，且位於陶瓷材料與圖案化金屬結構的介面。
本揭露提出一種陶瓷元件的製造方法，包括以下步驟。提供陶瓷材料。在陶瓷材料的表面上形成多個凹陷。在形成凹陷之後，對陶瓷材料的表面進行表面活化處理。藉由無電鍍製程在經表面活化處理的陶瓷材料的表面上形成第一金屬層。對第一金屬層進行圖案化製程，而形成第一圖案化金屬層。
為讓本揭露的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。
圖1A至圖1D為本揭露一實施例的陶瓷元件的製造流程示意圖。圖2為沿著圖1D中的I-I’剖面線的剖面圖。
請參照圖1A，提供陶瓷材料100。陶瓷材料100例如是鈦酸鈣(CaTiO3 )、鈦酸鎂(MgTiO3 )、鈦酸鋅(ZnTiO3 )或其組合。在陶瓷材料100中可具有至少一個貫穿孔102。在此實施例中，陶瓷材料100中的貫穿孔102是四個為例來行說明，但本揭露並不以此為限。貫穿孔102的深寬比例如是12以下。在一實施例中，貫穿孔102的深寬比例如是10以下。
陶瓷材料100的表面可至少包括非共平面的第一表面S1與第二表面S2。第一表面S1與第二表面S2可彼此相鄰或不相鄰。在此實施例中，第一表面S1與第二表面S2是以彼此相鄰為例來進行說明。此外，陶瓷材料100的形狀雖然是以六面體為例來進行說明，但本揭露並不以此為限，所屬技術領域具有通常知識者可依照產品設計需求來調整陶瓷材料100的形狀。
接著，在陶瓷材料100的表面上形成微小的多個凹陷104(在圖中，以「點」表示)。此外，在貫穿孔102的表面上亦可形成凹陷104。由陶瓷材料100上的凹陷104所形成的表面粗糙度例如是小於5微米。凹陷104的形成方法例如是對陶瓷材料100進行濕式蝕刻製程。舉例來說，可將陶瓷材料100浸泡在蝕刻劑中，而在陶瓷材料100的表面上形成多個凹陷104。濕式蝕刻製程所使用的蝕刻劑例如是氫氟酸、硫酸與雙氧水的混合物或緩衝氧化層蝕刻劑（BOE），且蝕刻劑的濃度例如是1%至20%。陶瓷材料100浸泡在蝕刻劑中的時間例如是1分鐘至10分鐘。
然後，請參照圖1B，在形成凹陷104之後，對陶瓷材料100的表面進行表面活化處理。藉此，可在凹陷104的表面上形成表面活化材料106。此外，表面活化材料106更可全面性地覆蓋於陶瓷材料100的表面。表面活化材料例如是鈀、金、鉑、銀或其化合物。表面活化處理包括使反應物與還原劑在陶瓷材料100的表面進行反應。反應物例如是氯化鈀(PdCl2 )、醋酸鈀、聚乙烯吡咯烷酮-鈀(PVP-Pd)、聚乙烯醇-鈀(PVA-Pd)、氯化金、聚乙烯吡咯烷酮-鉑(PVP-Pt)、聚乙烯醇-鉑(PVA-Pt)、聚乙烯吡咯烷酮-銀(PVP-Ag)、聚乙烯醇-銀(PVA-Ag)或其組合，且還原劑例如是氯化亞錫、甲醛或亞磷酸鈉。
接下來，請參照圖1C，藉由無電鍍製程在經表面活化處理的陶瓷材料100的表面上形成第一金屬層108。第一金屬層108更可形成於貫穿孔102的表面上。表面活化材料106可協助第一金屬層108接著於陶瓷材料100的表面上。第一金屬層108的材料例如是銅、鎳、銀或金。
此外，第一金屬層108的形成方法更可包括在進行無電鍍製程之後，進行電鍍製程，以將第一金屬層108的厚度增加至目標厚度。在另一實施例中，亦可直接藉由無電鍍製程形成具有目標厚度的第一金屬層108。
之後，請參照圖1D，對第一金屬層108進行圖案化製程，而形成第一圖案化金屬層108a。圖案化製程例如是雷射圖案化製程。在此實施例中，可藉由圖案化製程移除部分第一金屬層108與部分表面活化材料106，而暴露出陶瓷材料100的部分表面。要注意的是，在本實施例中，經由圖案化製程而暴露出陶瓷材料100的部分表面，仍存在有多個凹陷104。然而在另一實施例中，藉由圖案化製程可移除部分第一金屬層108，而暴露出部分表面活化材料106。或是又一實施例中，可藉由圖案化製程移除部分第一金屬層108、部分表面活化材料106與凹陷104，而暴露出陶瓷材料100的部分表面，其中，暴露出的部分表面不具有凹陷104。上述實施例的變化，係由圖案化製程控制移除的深度所致，可依據實際需求來進行調整，並不以所列舉者為限。
藉由上述方法，可製作出陶瓷元件10。在陶瓷元件10中，可依據製程設計需求來選擇表面活化材料106與第一圖案化金屬層108a的材料組合。舉例來說，表面活化材料106可為鈀，且第一圖案化金屬層108a的材料可為銀。
基於上述實施例可知，在上述陶瓷元件10的製造方法中，由於第一圖案化金屬層108a是藉由無電鍍製程與圖案化製程形成在經表面活化處理的陶瓷材料100的表面上，並非藉由高溫燒結製程所形成，因此第一圖案化金屬層108a中的金屬線路具有良好的位置精度。
以下，藉由圖1D與圖2來說明上述實施例的陶瓷元件10。
請參照圖1D與圖2，陶瓷元件10包括陶瓷材料100、圖案化金屬結構與表面活化材料106。陶瓷元件10可為濾波器(如，高頻濾波器)或全球定位系統用天線。在此實施例中，陶瓷元件10是以濾波器為例來進行說明。陶瓷材料100的表面至少包括非共平面的第一表面S1與第二表面S2，且在陶瓷材料100的表面上具有微小的多個凹陷104。在陶瓷材料100中可具有貫穿孔102。當陶瓷元件10為濾波器時，第一表面S1與第二表面S2中的一者可為電極面，且第一表面S1與第二表面S2中的另一者可為訊號結構面。
圖案化金屬結構可為單層結構或多層結構。在此實施例中，圖案化金屬結構是以第一圖案化金屬層108a的單層結構為例來進行說明。第一圖案化金屬層108a(圖案化金屬結構)設置於第一表面S1與第二表面S2上，且更可設置於陶瓷材料100的其他表面上。此外，部分第一圖案化金屬層108a(圖案化金屬結構)可設置於貫穿孔102的表面上。第一圖案化金屬層108a的材料例如是銅、鎳、銀或金。
表面活化材料106設置在凹陷104的表面上，且位於陶瓷材料100與第一圖案化金屬層108a(圖案化金屬結構)的介面。表面活化材料106例如是鈀、金、鉑、銀或其化合物。在陶瓷材料100與第一圖案化金屬層108a(圖案化金屬結構)的介面處，以陶瓷材料100與表面活化材料106的總量計，表面活化材料106的含量例如是5重量百分比(wt%)以下，例如可為0.1wt%至5wt%。
此外，陶瓷元件10中的各構件的材料、規格、形成方法或功效已於上述實施例中進行詳盡地說明，所以於此不再重複說明。
基於上述實施例可知，在陶瓷元件100中，由於表面活化材料106設置在陶瓷材料100的凹陷104的表面上，所以可利用無電鍍製程與圖案化製程在具有表面活化材料106的陶瓷材料100的表面上形成第一圖案化金屬層108a(圖案化金屬結構)，且無須進行高溫燒結製程，因此第一圖案化金屬層108a(圖案化金屬結構)中的金屬線路可具有良好的位置精度。
圖3A至圖3D為本揭露另一實施例接續圖1C的陶瓷元件的製造流程示意圖。圖4為沿著圖3D中的II-II’剖面線的剖面圖。圖3A與圖1C中相同的構件已於上述實施例中進行說明，所以於此不再重複說明。
請參照圖3A，在形成圖1C的第一金屬層108之後，並於進行圖案化製程之前，在第一金屬層108上形成第二金屬層110。第二金屬層110可用以保護第一金屬層108，以防止第一金屬層108產生氧化。第一金屬層108的厚度可大於第二金屬層110的厚度。第二金屬層110的形成方法例如是電鍍法或無電鍍法。第二金屬層110的材料例如是電鍍金屬或無電鍍金屬。電鍍金屬例如是銅、鎳、銀、金、白金、錫或其合金，且無電鍍金屬例如是銅、鎳、銀、金、白金或鈀。
請參照圖3B，對第二金屬層110進行雷射圖案化製程，而形成第二圖案化金屬層110a。在此實施例中，可藉由雷射圖案化製程移除部分第二金屬層110，而暴露出第一金屬層108的部分表面。
請參照圖3C，以第二圖案化金屬層110a作為罩幕，對第一金屬層108進行蝕刻製程。在此實施例中，可藉由蝕刻製程移除部分第一金屬層108與部分表面活化材料106，而暴露出陶瓷材料100的部分表面。蝕刻製程例如是濕式蝕刻製程，且所使用的蝕刻劑例如是磷酸、硫酸或上述材料與雙氧水的混合物。藉此，可對第一金屬層108進行圖案化，而形成第一圖案化金屬層108a(請參照圖4)存在於第二圖案化金屬層110a與陶瓷材料100之間。
在此實施例中，雖然對第一金屬層108所進行的圖案化製程是以上述方法為例來進行說明，但本揭露並不以此為限。舉例來說，可直接對圖3A中的第二金屬層110與位於其下方的第一金屬層108進行雷射圖案化製程，而形成圖3C中的第二圖案化金屬層110a與位於其下方的第一圖案化金屬層108a(請參照圖4)。
請參照圖3D，可選擇性地藉由無電鍍製程在第二圖案化金屬層110a上形成第三圖案化金屬層112。第三圖案化金屬層112可用以增加可焊性。在此實施例中，第三圖案化金屬層112只會形成在第二圖案化金屬層110a上，而不會形成在由第二圖案化金屬層110a所暴露出的陶瓷材料100的表面上。第三圖案化金屬層112的材料例如是電鍍金屬或無電鍍金屬，如金、鎳、銀、錫、白金或其合金。
藉由上述方法，可製作出陶瓷元件20。在陶瓷元件20中，可依據製程設計需求來選擇表面活化材料106、第一圖案化金屬層108a、第二圖案化金屬層110a與第三圖案化金屬層112的材料組合。舉例來說，表面活化材料106可為鈀，第一圖案化金屬層108的材料可為銅，第二圖案化金屬層110a的材料可為鎳，且第三圖案化金屬層112的材料可為金。
基於上述實施例可知，在上述陶瓷元件20的製造方法中，由於圖案化金屬結構114是藉由電鍍或無電鍍製程與圖案化製程形成在經表面活化處理的陶瓷材料100的表面上，並非藉由高溫燒結製程所形成，因此圖案化金屬結構114中的金屬線路具有良好的位置精度。
以下，藉由圖3D與圖4來說明上述實施例的陶瓷元件20。
請同時參照圖1D、圖2、圖3D與圖4，陶瓷元件20與陶瓷元件10相似，但要注意的是陶瓷元件20的圖案化金屬結構114為多層結構。圖案化金屬結構114包括第一圖案化金屬層108a與第二圖案化金屬層110a，且更可選擇性地包括第三圖案化金屬層112。圖案化金屬結構114設置於第一表面S1與第二表面S2上，且更可設置於陶瓷材料100的其他表面上。此外，部分圖案化金屬結構114可設置於貫穿孔102的表面上。表面活化材料106位於陶瓷材料100與圖案化金屬結構114的介面。
第一圖案化金屬層108a設置於第一表面S1與第二表面S2上，且更可設置於陶瓷材料100的其他表面上。此外，部分第一圖案化金屬層108a可設置於貫穿孔102的表面上。第一圖案化金屬層108a的材料例如是銅、鎳、銀或金。
第二圖案化金屬層110a設置於第一圖案化金屬層108a上。第一圖案化金屬層108a的厚度可大於第二圖案化金屬層110a的厚度。第二圖案化金屬層110a的材料例如是電鍍金屬或無電鍍金屬。電鍍金屬例如是銅、鎳、銀、金、白金、錫或其合金，且無電鍍金屬例如是銅、鎳、銀、金、白金或鈀。
第三圖案化金屬層112設置於第二圖案化金屬層110a上。第三圖案化金屬層112的材料例如是電鍍金屬或無電鍍金屬，如金、鎳、銀、錫、白金或其合金。
此外，陶瓷元件20與陶瓷元件10中相似的構件使用相同的符號表示並省略其說明。
基於上述實施例可知，在陶瓷元件20中，由於表面活化材料106設置在陶瓷材料100的凹陷104的表面上，所以可利用無電鍍製程與圖案化製程在具有表面活化材料106的陶瓷材料100的表面上形成圖案化金屬結構114，且無須進行高溫燒結製程，因此圖案化金屬結構114中的金屬線路可具有良好的位置精度。
＜實驗例＞
＜實例1：陶瓷濾波器的製作＞
首先，進行濕式蝕刻製程，將鈦酸鈣鎂陶瓷材料浸泡於2%氫氟酸(HF)溶液中10分鐘，以於陶瓷材料表面形成微蝕的多個凹陷，且可使得表面粗糙度Ra由0.2微米提升至0.5微米。接著，進行表面活化處理，將形成有多個凹陷的陶瓷材料浸泡於含有氯化亞錫(還原劑)與氯化鈀(反應物)的溶液中進行表面活化處理，使鈀原子(表面活化材料)附著於微蝕的多個凹陷中。然後，再進行無電鍍製程，將經表面活化處理的陶瓷材料放入無電鍍銅溶液中30分鐘，以於陶瓷材料的表面與深寬比為8的貫穿孔中沉積銅金屬，再利用電鍍銅製程再次沉積銅金屬，使銅金屬的厚度達到目標值。接下來，將電鍍鎳或無電鍍鎳沉積於銅金屬上方，再對鎳層進行雷射圖案化製程。之後，再以經圖案化後的鎳層作為罩幕層，以磷酸與雙氧水的混合物作為蝕刻劑，對銅金屬層進行蝕刻製程。最後，於鎳層上進行無電鍍金製程，而可得陶瓷濾波器。
＜實例2：表面活化材料的檢測＞
圖5A為使用SEM/EDS對陶瓷濾波器中經表面活化處理前的陶瓷材料進行表面活化材料檢測的結果圖。圖5B為使用SEM/EDS對陶瓷濾波器中經表面活化處理後的陶瓷材料進行表面活化材料檢測的結果圖。
使用掃描式電子顯微鏡附加能量分散光譜儀(Scanning Electron Microscope/Energy Dispersive Spectrometer，SEM/EDS)對實例1的陶瓷濾波器中的經表面活化處理前後的陶瓷材料進行表面活化材料檢測的結果如圖5A、圖5B、表1與表2所示。
表1 經表面活化處理前的陶瓷材料的成份
表2 經表面活化處理後的陶瓷材料的成份
由圖5A、圖5B、表1與表2可知，在對陶瓷材料進行酸蝕刻製程之前，陶瓷材料的成份不含鈀原子。在對陶瓷材料進行酸蝕刻製程與表面活化處理之後，陶瓷材料的成份含有0.6wt%的鈀原子。
綜上所述，在本揭露所提出的陶瓷元件及其製造方法中，由於表面活化材料設置在陶瓷材料的凹陷的表面上，所以可利用無電鍍製程與圖案化製程在具有表面活化材料的陶瓷材料的表面上形成圖案化金屬結構，且無須進行高溫燒結製程，因此圖案化金屬結構中的金屬線路可具有良好的位置精度。
雖然本揭露已以實施例揭露如上，然其並非用以限定本揭露，任何所屬技術領域中具有通常知識者，在不脫離本揭露的精神和範圍內，當可作些許的更動與潤飾，故本揭露的保護範圍當視後附的申請專利範圍所界定者為準。
100‧‧‧陶瓷材料
102‧‧‧貫穿孔
104‧‧‧凹陷
106‧‧‧表面活化材料
108‧‧‧第一金屬層
108a‧‧‧第一圖案化金屬層
110‧‧‧第二金屬層
110a‧‧‧第二圖案化金屬層
112‧‧‧第三圖案化金屬層
114‧‧‧圖案化金屬結構
S1‧‧‧第一表面
S2‧‧‧第二表面
圖1A至圖1D為本揭露一實施例的陶瓷元件的製造流程示意圖。 圖2為沿著圖1D中的I-I’剖面線的剖面圖。 圖3A至圖3D為本揭露另一實施例接續圖1C的陶瓷元件的製造流程示意圖。 圖4為沿著圖3D中的II-II’剖面線的剖面圖。 圖5A為使用掃描式電子顯微鏡附加能量分散光譜儀(Scanning Electron Microscope/Energy Dispersive Spectrometer，SEM/EDS)對陶瓷濾波器中經表面活化處理前的陶瓷材料進行表面活化材料檢測的結果圖。 圖5B為使用SEM/EDS對陶瓷濾波器中經表面活化處理後的陶瓷材料進行表面活化材料檢測的結果圖。

Claims (31)

  1. 一種陶瓷元件，包括： 一陶瓷材料，其中該陶瓷材料的表面至少包括非共平面的一第一表面與一第二表面，且在該陶瓷材料的表面上具有多個凹陷； 一圖案化金屬結構，設置於該第一表面與該第二表面上；以及 一表面活化材料，設置在該些凹陷的表面上，且位於該陶瓷材料與該圖案化金屬結構的介面。
  2. 如申請專利範圍第1項所述的陶瓷元件，其中該陶瓷材料包括鈦酸鈣(CaTiO3 )、鈦酸鎂(MgTiO3 )、鈦酸鋅(ZnTiO3 )或其組合。
  3. 如申請專利範圍第1項所述的陶瓷元件，其中該第一表面與該第二表面彼此相鄰或不相鄰。
  4. 如申請專利範圍第1項所述的陶瓷元件，其中由該陶瓷材料上的該些凹陷所形成的表面粗糙度小於5微米。
  5. 如申請專利範圍第1項所述的陶瓷元件，其中在該陶瓷材料中具有至少一個貫穿孔，且部分該圖案化金屬結構設置於該至少一個貫穿孔的表面上。
  6. 如申請專利範圍第5項所述的陶瓷元件，其中該至少一個貫穿孔的深寬比為12以下。
  7. 如申請專利範圍第1項所述的陶瓷元件，其中該圖案化金屬結構包括一第一圖案化金屬層。
  8. 如申請專利範圍第7項所述的陶瓷元件，其中該第一圖案化金屬層的材料包括銅、鎳、銀或金。
  9. 如申請專利範圍第7項所述的陶瓷元件，其中該圖案化金屬結構更包括一第二圖案化金屬層，其中該第二圖案化金屬層設置於該第一圖案化金屬層上。
  10. 如申請專利範圍第9項所述的陶瓷元件，其中該第一圖案化金屬層的厚度大於該第二圖案化金屬層的厚度。
  11. 如申請專利範圍第9項所述的陶瓷元件，其中該第二圖案化金屬層的材料包括一電鍍金屬或一無電鍍金屬。
  12. 如申請專利範圍第11項所述的陶瓷元件，其中該電鍍金屬包括銅、鎳、銀、金、白金、錫或其合金，且該無電鍍金屬包括銅、鎳、銀、金、白金或鈀。
  13. 如申請專利範圍第9項所述的陶瓷元件，其中該圖案化金屬結構更包括一第三圖案化金屬層，其中該第三圖案化金屬層設置於該第二圖案化金屬層上。
  14. 如申請專利範圍第13項所述的陶瓷元件，其中該第三圖案化金屬層的材料包括一電鍍金屬或一無電鍍金屬。
  15. 如申請專利範圍第14項所述的陶瓷元件，其中該電鍍或無電鍍金屬包括金、鎳、銀、錫、白金或其合金。
  16. 如申請專利範圍第1項所述的陶瓷元件，其中該表面活化材料包括鈀、金、鉑、銀或其化合物。
  17. 如申請專利範圍第1項所述的陶瓷元件，其中在該陶瓷材料與該圖案化金屬結構的介面處，以該陶瓷材料與該表面活化材料的總量計，該表面活化材料的含量為5wt%以下。
  18. 如申請專利範圍第1項所述的陶瓷元件，其中該陶瓷元件包括濾波器或全球定位系統用天線。
  19. 一種陶瓷元件的製造方法，包括： 提供一陶瓷材料； 在該陶瓷材料的表面上形成多個凹陷； 在形成該些凹陷之後，對該陶瓷材料的表面進行一表面活化處理； 藉由一無電鍍製程在經該表面活化處理的該陶瓷材料的表面上形成一第一金屬層；以及 對該第一金屬層進行一圖案化製程，而形成一第一圖案化金屬層。
  20. 如申請專利範圍第19項所述的陶瓷元件的製造方法，其中在該陶瓷材料中具有至少一個貫穿孔，且該第一金屬層更形成於該至少一個貫穿孔的表面上。
  21. 如申請專利範圍第19項所述的陶瓷元件的製造方法，其中該陶瓷材料的表面至少包括非共平面的一第一表面與一第二表面，且該第一圖案化金屬層設置於該第一表面與該第二表面上。
  22. 如申請專利範圍第21項所述的陶瓷元件的製造方法，其中該第一表面與該第二表面彼此相鄰或不相鄰。
  23. 如申請專利範圍第19項所述的陶瓷元件的製造方法，其中該些凹陷的形成方法包括對該陶瓷材料進行一濕式蝕刻製程。
  24. 如申請專利範圍第19項所述的陶瓷元件的製造方法，其中該表面活化處理包括使一反應物與一還原劑在該陶瓷材料的表面進行反應，其中該反應物包括氯化鈀、醋酸鈀、聚乙烯吡咯烷酮-鈀、聚乙烯醇-鈀、氯化金、聚乙烯吡咯烷酮-鉑、聚乙烯醇-鉑、聚乙烯吡咯烷酮-銀、聚乙烯醇-銀或其組合，且該還原劑包括氯化亞錫、甲醛或亞磷酸鈉。
  25. 如申請專利範圍第19項所述的陶瓷元件的製造方法，其中該第一金屬層的形成方法更包括在進行該無電鍍製程之後，進行電鍍製程。
  26. 如申請專利範圍第19項所述的陶瓷元件的製造方法，其中該圖案化製程包括一雷射圖案化製程。
  27. 如申請專利範圍第19項所述的陶瓷元件的製造方法，更包括在進行該圖案化製程之前，在該第一金屬層上形成一第二金屬層。
  28. 如申請專利範圍第27項所述的陶瓷元件的製造方法，其中該第二金屬層的形成方法包括一電鍍法或一無電鍍法。
  29. 如申請專利範圍第27項所述的陶瓷元件的製造方法，其中該圖案化製程包括對該第二金屬層與該第一金屬層進行一雷射圖案化製程。
  30. 如申請專利範圍第27項所述的陶瓷元件的製造方法，其中該圖案化製程包括： 對該第二金屬層進行一雷射圖案化製程，而形成一第二圖案化金屬層；以及 以該第二圖案化金屬層作為罩幕，對該第一金屬層進行一蝕刻製程。
  31. 如申請專利範圍第30項所述的陶瓷元件的製造方法，更包括在進行該圖案化製程之後，藉由該無電鍍製程在該第二圖案化金屬層上形成一第三圖案化金屬層。
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Publication number Priority date Publication date Assignee Title
JPS61121501A (ja) * 1984-11-17 1986-06-09 Tdk Corp 誘電体共振器およびその製造方法
WO1990005389A1 (en) * 1988-11-07 1990-05-17 Matsushita Electric Industrial Co., Ltd. Dielectric resonator, method of producing the same, and plating device therefor
DE19535068C2 (de) 1995-09-21 1997-08-21 Lpkf Cad Cam Systeme Gmbh Beschichtung zur strukturierten Erzeugung von Leiterbahnen auf der Oberfläche von elektrisch isolierenden Substraten, Verfahren zum Herstellen der Beschichtung und von strukturierten Leiterbahnen
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US6809612B2 (en) * 2002-04-30 2004-10-26 Cts Corporation Dielectric block signal filters with cost-effective conductive coatings
WO2004093239A1 (en) 2003-04-07 2004-10-28 Cts Corporation Low profile ceramic rf filter
US7541893B2 (en) 2005-05-23 2009-06-02 Cts Corporation Ceramic RF filter and duplexer having improved third harmonic response
WO2008080893A1 (de) 2007-01-05 2008-07-10 Basf Se Verfahren zur herstellung von elektrisch leitfähigen oberflächen
TWI394506B (zh) * 2008-10-13 2013-04-21 Unimicron Technology Corp 多層立體線路的結構及其製作方法
TW201221032A (en) 2010-11-03 2012-05-16 Ta I Technology Co Ltd Cermet heat dissipation board manufacturing method
TWM414036U (en) 2011-04-22 2011-10-11 yong-rong Zhong High pass filter
TWI423751B (zh) * 2011-07-08 2014-01-11 Ict Lanto Ltd Method of manufacturing three - dimensional circuit
TWM462745U (zh) 2013-04-30 2013-10-01 3D Circuit Taiwan Company Ltd 陶瓷雷射金屬化以及金屬層結構
TWI478641B (zh) * 2014-01-20 2015-03-21 Rhema Technology & Trading Company Ltd 雷射直接成型之陶瓷電路板及其製作方法
CN205194818U (zh) 2015-12-11 2016-04-27 厦门松元电子有限公司 一种陶瓷介质滤波器
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