TW201924929A - Ceramic device and manufacturing method thereof - Google Patents

Ceramic device and manufacturing method thereof Download PDF

Info

Publication number
TW201924929A
TW201924929A TW106142946A TW106142946A TW201924929A TW 201924929 A TW201924929 A TW 201924929A TW 106142946 A TW106142946 A TW 106142946A TW 106142946 A TW106142946 A TW 106142946A TW 201924929 A TW201924929 A TW 201924929A
Authority
TW
Taiwan
Prior art keywords
metal layer
item
ceramic element
patterned metal
element according
Prior art date
Application number
TW106142946A
Other languages
Chinese (zh)
Other versions
TWI649193B (en
Inventor
黃萌祺
高端環
林冠廷
Original Assignee
財團法人工業技術研究院
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 財團法人工業技術研究院 filed Critical 財團法人工業技術研究院
Priority to TW106142946A priority Critical patent/TWI649193B/en
Priority to US15/842,902 priority patent/US10669209B2/en
Application granted granted Critical
Publication of TWI649193B publication Critical patent/TWI649193B/en
Publication of TW201924929A publication Critical patent/TW201924929A/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/46Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
    • C04B35/462Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
    • C04B35/465Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/03Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on magnesium oxide, calcium oxide or oxide mixtures derived from dolomite
    • C04B35/04Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on magnesium oxide, calcium oxide or oxide mixtures derived from dolomite based on magnesium oxide
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/4505Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements characterised by the method of application
    • C04B41/4535Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements characterised by the method of application applied as a solution, emulsion, dispersion or suspension
    • C04B41/4541Electroless plating
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/52Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/53After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
    • C04B41/5338Etching
    • C04B41/5353Wet etching, e.g. with etchants dissolved in organic solvents
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81Coating or impregnation
    • C04B41/85Coating or impregnation with inorganic materials
    • C04B41/88Metals
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81Coating or impregnation
    • C04B41/89Coating or impregnation for obtaining at least two superposed coatings having different compositions
    • C04B41/90Coating or impregnation for obtaining at least two superposed coatings having different compositions at least one coating being a metal
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1633Process of electroless plating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1633Process of electroless plating
    • C23C18/1646Characteristics of the product obtained
    • C23C18/165Multilayered product
    • C23C18/1651Two or more layers only obtained by electroless plating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1633Process of electroless plating
    • C23C18/1646Characteristics of the product obtained
    • C23C18/165Multilayered product
    • C23C18/1653Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1633Process of electroless plating
    • C23C18/1689After-treatment
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18Pretreatment of the material to be coated
    • C23C18/1851Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
    • C23C18/1872Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
    • C23C18/1875Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment only one step pretreatment
    • C23C18/1879Use of metal, e.g. activation, sensitisation with noble metals
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18Pretreatment of the material to be coated
    • C23C18/1851Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
    • C23C18/1872Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
    • C23C18/1886Multistep pretreatment
    • C23C18/1893Multistep pretreatment with use of organic or inorganic compounds other than metals, first
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31Coating with metals
    • C23C18/32Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31Coating with metals
    • C23C18/38Coating with copper
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31Coating with metals
    • C23C18/42Coating with noble metals
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02Electroplating of selected surface areas
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/48After-treatment of electroplated surfaces
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/00474Uses not provided for elsewhere in C04B2111/00
    • C04B2111/00844Uses not provided for elsewhere in C04B2111/00 for electronic applications
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3205Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
    • C04B2235/3206Magnesium oxides or oxide-forming salts thereof
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3205Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
    • C04B2235/3208Calcium oxide or oxide-forming salts thereof, e.g. lime
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/72Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/24Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Structural Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrochemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Chemically Coating (AREA)

Abstract

A ceramic device including a ceramic material, a patterned metal structure and a surface activation material. A surface of the ceramic material at least includes a first surface and a second surface which are non-coplanar. The ceramic material has recesses on the surface thereof. The patterned metal structure is disposed on the first surface and the second surface. The surface activation material is disposed on a surface of the recesses and located at an interface between the ceramic material and the patterned metal structure.

Description

陶瓷元件及其製造方法Ceramic element and manufacturing method thereof

本揭露是有關於一種元件及其製造方法,且特別是有關於一種陶瓷元件及其製造方法。The disclosure relates to a component and a method for manufacturing the same, and more particularly, to a ceramic component and a method for manufacturing the same.

目前,在具有金屬線路的陶瓷元件的製程中,金屬線路具有較大的位置精度誤差。At present, in the process of manufacturing a ceramic element with a metal circuit, the metal circuit has a large position accuracy error.

舉例來說,在目前陶瓷濾波器的製作方法中,會先在陶瓷材料上沾銀漿並藉由快速旋轉方式,將銀漿塗佈在陶瓷材料上與陶瓷材料中的貫穿孔表面上,再藉由高溫燒結使銀固化於陶瓷材料上與貫穿孔表面上。接著,使用超精密加工製程研磨去除預定進行圖案化的表面上的銀金屬,再進行銀漿網印與銀漿燒結,完成濾波器的電極與金屬結構面。For example, in the current manufacturing method of ceramic filter, the silver paste is first dipped on the ceramic material, and the silver paste is coated on the ceramic material and the surface of the through-hole in the ceramic material by rapid rotation, and then Silver is solidified on the ceramic material and on the surface of the through-holes by high temperature sintering. Next, the ultra-precision machining process is used to grind and remove the silver metal on the surface to be patterned, and then perform silver paste screen printing and silver paste sintering to complete the electrode and metal structure surface of the filter.

上述方法是使用銀漿網印技術與金屬漿料燒結技術,製作陶瓷濾波器的金屬線路。然而,由於金屬線路會因高溫燒結造成線路尺寸與位置的偏差(約有5%至14%的位置精度誤差),因而導致天線頻率偏移量大,後續需倚靠大量人工進行手動天線修整。The above method uses the silver paste screen printing technology and the metal paste sintering technology to produce a metal circuit of a ceramic filter. However, due to the high temperature sintering of metal lines, circuit size and position deviations (about 5% to 14% position accuracy error) will cause large antenna frequency offsets, and subsequent manual antenna trimming will depend on a lot of manual work.

本揭露提供一種陶瓷元件及其製造方法,其可使得金屬線路具有良好的位置精度。The present disclosure provides a ceramic element and a manufacturing method thereof, which can make a metal circuit have good position accuracy.

本揭露提出一種陶瓷元件,包括陶瓷材料、圖案化金屬結構與表面活化材料。陶瓷材料的表面至少包括非共平面的第一表面與第二表面,且在陶瓷材料的表面上具有多個凹陷。圖案化金屬結構設置於第一表面與第二表面上。表面活化材料設置在凹陷的表面上,且位於陶瓷材料與圖案化金屬結構的介面。The present disclosure proposes a ceramic component including a ceramic material, a patterned metal structure, and a surface activation material. The surface of the ceramic material includes at least a non-coplanar first surface and a second surface, and has a plurality of depressions on the surface of the ceramic material. The patterned metal structure is disposed on the first surface and the second surface. The surface activating material is disposed on the recessed surface and is located at the interface between the ceramic material and the patterned metal structure.

本揭露提出一種陶瓷元件的製造方法,包括以下步驟。提供陶瓷材料。在陶瓷材料的表面上形成多個凹陷。在形成凹陷之後,對陶瓷材料的表面進行表面活化處理。藉由無電鍍製程在經表面活化處理的陶瓷材料的表面上形成第一金屬層。對第一金屬層進行圖案化製程,而形成第一圖案化金屬層。The present disclosure proposes a method for manufacturing a ceramic element, including the following steps. Provide ceramic materials. A plurality of depressions are formed on the surface of the ceramic material. After the depression is formed, the surface of the ceramic material is subjected to a surface activation treatment. A first metal layer is formed on the surface of the surface-treated ceramic material by an electroless plating process. A patterning process is performed on the first metal layer to form a first patterned metal layer.

為讓本揭露的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present disclosure more comprehensible, embodiments are described below in detail with reference to the accompanying drawings.

圖1A至圖1D為本揭露一實施例的陶瓷元件的製造流程示意圖。圖2為沿著圖1D中的I-I’剖面線的剖面圖。1A to 1D are schematic diagrams of a manufacturing process of a ceramic element according to an embodiment of the disclosure. Fig. 2 is a cross-sectional view taken along a line I-I 'in Fig. 1D.

請參照圖1A,提供陶瓷材料100。陶瓷材料100例如是鈦酸鈣(CaTiO3 )、鈦酸鎂(MgTiO3 )、鈦酸鋅(ZnTiO3 )或其組合。在陶瓷材料100中可具有至少一個貫穿孔102。在此實施例中,陶瓷材料100中的貫穿孔102是四個為例來行說明,但本揭露並不以此為限。貫穿孔102的深寬比例如是12以下。在一實施例中,貫穿孔102的深寬比例如是10以下。Referring to FIG. 1A, a ceramic material 100 is provided. 100 is a ceramic material, calcium titanate (CaTiO 3), magnesium titanate (MgTiO 3), zinc titanate (ZnTiO 3), or combinations thereof. There may be at least one through hole 102 in the ceramic material 100. In this embodiment, four through holes 102 in the ceramic material 100 are taken as an example for description, but the disclosure is not limited thereto. The aspect ratio of the through hole 102 is, for example, 12 or less. In one embodiment, the aspect ratio of the through hole 102 is, for example, 10 or less.

陶瓷材料100的表面可至少包括非共平面的第一表面S1與第二表面S2。第一表面S1與第二表面S2可彼此相鄰或不相鄰。在此實施例中,第一表面S1與第二表面S2是以彼此相鄰為例來進行說明。此外,陶瓷材料100的形狀雖然是以六面體為例來進行說明,但本揭露並不以此為限,所屬技術領域具有通常知識者可依照產品設計需求來調整陶瓷材料100的形狀。The surface of the ceramic material 100 may include at least a non-coplanar first surface S1 and a second surface S2. The first surface S1 and the second surface S2 may be adjacent to each other or not. In this embodiment, the first surface S1 and the second surface S2 are described by taking the example of being adjacent to each other as an example. In addition, although the shape of the ceramic material 100 is described by taking a hexahedron as an example, the disclosure is not limited thereto. Those skilled in the art can adjust the shape of the ceramic material 100 according to product design requirements.

接著,在陶瓷材料100的表面上形成微小的多個凹陷104(在圖中,以「點」表示)。此外,在貫穿孔102的表面上亦可形成凹陷104。由陶瓷材料100上的凹陷104所形成的表面粗糙度例如是小於5微米。凹陷104的形成方法例如是對陶瓷材料100進行濕式蝕刻製程。舉例來說,可將陶瓷材料100浸泡在蝕刻劑中,而在陶瓷材料100的表面上形成多個凹陷104。濕式蝕刻製程所使用的蝕刻劑例如是氫氟酸、硫酸與雙氧水的混合物或緩衝氧化層蝕刻劑(BOE),且蝕刻劑的濃度例如是1%至20%。陶瓷材料100浸泡在蝕刻劑中的時間例如是1分鐘至10分鐘。Next, a small number of depressions 104 (indicated by "dot" in the figure) are formed on the surface of the ceramic material 100. In addition, a recess 104 may be formed on the surface of the through hole 102. The surface roughness formed by the depressions 104 on the ceramic material 100 is, for example, less than 5 microns. A method of forming the depression 104 is, for example, a wet etching process of the ceramic material 100. For example, the ceramic material 100 can be immersed in an etchant to form a plurality of depressions 104 on the surface of the ceramic material 100. The etchant used in the wet etching process is, for example, hydrofluoric acid, a mixture of sulfuric acid and hydrogen peroxide, or a buffer oxide layer etchant (BOE), and the concentration of the etchant is, for example, 1% to 20%. The time for which the ceramic material 100 is immersed in the etchant is, for example, 1 minute to 10 minutes.

然後,請參照圖1B,在形成凹陷104之後,對陶瓷材料100的表面進行表面活化處理。藉此,可在凹陷104的表面上形成表面活化材料106。此外,表面活化材料106更可全面性地覆蓋於陶瓷材料100的表面。表面活化材料例如是鈀、金、鉑、銀或其化合物。表面活化處理包括使反應物與還原劑在陶瓷材料100的表面進行反應。反應物例如是氯化鈀(PdCl2 )、醋酸鈀、聚乙烯吡咯烷酮-鈀(PVP-Pd)、聚乙烯醇-鈀(PVA-Pd)、氯化金、聚乙烯吡咯烷酮-鉑(PVP-Pt)、聚乙烯醇-鉑(PVA-Pt)、聚乙烯吡咯烷酮-銀(PVP-Ag)、聚乙烯醇-銀(PVA-Ag)或其組合,且還原劑例如是氯化亞錫、甲醛或亞磷酸鈉。Then, referring to FIG. 1B, after the recess 104 is formed, a surface activation treatment is performed on the surface of the ceramic material 100. Thereby, a surface-active material 106 can be formed on the surface of the depression 104. In addition, the surface activating material 106 can cover the surface of the ceramic material 100 more comprehensively. The surface-active material is, for example, palladium, gold, platinum, silver, or a compound thereof. The surface activation treatment includes reacting a reactant and a reducing agent on the surface of the ceramic material 100. The reactants are, for example, palladium chloride (PdCl 2 ), palladium acetate, polyvinylpyrrolidone-palladium (PVP-Pd), polyvinyl alcohol-palladium (PVA-Pd), gold chloride, polyvinylpyrrolidone-platinum (PVP-Pt ), Polyvinyl alcohol-platinum (PVA-Pt), polyvinylpyrrolidone-silver (PVP-Ag), polyvinyl alcohol-silver (PVA-Ag), or a combination thereof, and the reducing agent is, for example, stannous chloride, formaldehyde or Sodium phosphite.

接下來,請參照圖1C,藉由無電鍍製程在經表面活化處理的陶瓷材料100的表面上形成第一金屬層108。第一金屬層108更可形成於貫穿孔102的表面上。表面活化材料106可協助第一金屬層108接著於陶瓷材料100的表面上。第一金屬層108的材料例如是銅、鎳、銀或金。Next, referring to FIG. 1C, a first metal layer 108 is formed on the surface of the ceramic material 100 subjected to the surface activation treatment by an electroless plating process. The first metal layer 108 may be further formed on a surface of the through hole 102. The surface-active material 106 can assist the first metal layer 108 to adhere to the surface of the ceramic material 100. The material of the first metal layer 108 is, for example, copper, nickel, silver, or gold.

此外,第一金屬層108的形成方法更可包括在進行無電鍍製程之後,進行電鍍製程,以將第一金屬層108的厚度增加至目標厚度。在另一實施例中,亦可直接藉由無電鍍製程形成具有目標厚度的第一金屬層108。In addition, the method for forming the first metal layer 108 may further include performing an electroplating process after the electroless plating process to increase the thickness of the first metal layer 108 to a target thickness. In another embodiment, the first metal layer 108 having a target thickness can also be formed directly by an electroless plating process.

之後,請參照圖1D,對第一金屬層108進行圖案化製程,而形成第一圖案化金屬層108a。圖案化製程例如是雷射圖案化製程。在此實施例中,可藉由圖案化製程移除部分第一金屬層108與部分表面活化材料106,而暴露出陶瓷材料100的部分表面。要注意的是,在本實施例中,經由圖案化製程而暴露出陶瓷材料100的部分表面,仍存在有多個凹陷104。然而在另一實施例中,藉由圖案化製程可移除部分第一金屬層108,而暴露出部分表面活化材料106。或是又一實施例中,可藉由圖案化製程移除部分第一金屬層108、部分表面活化材料106與凹陷104,而暴露出陶瓷材料100的部分表面,其中,暴露出的部分表面不具有凹陷104。上述實施例的變化,係由圖案化製程控制移除的深度所致,可依據實際需求來進行調整,並不以所列舉者為限。After that, referring to FIG. 1D, a patterning process is performed on the first metal layer 108 to form a first patterned metal layer 108 a. The patterning process is, for example, a laser patterning process. In this embodiment, a portion of the surface of the ceramic material 100 can be exposed by removing a portion of the first metal layer 108 and a portion of the surface activating material 106 by a patterning process. It should be noted that, in this embodiment, a part of the surface of the ceramic material 100 is exposed through the patterning process, and there are still a plurality of depressions 104. However, in another embodiment, a portion of the first metal layer 108 may be removed by a patterning process, and a portion of the surface-active material 106 is exposed. In another embodiment, part of the first metal layer 108, part of the surface activating material 106, and the recess 104 may be removed by a patterning process to expose a part of the surface of the ceramic material 100, wherein the exposed part of the surface is not With depression 104. The changes in the above embodiments are caused by the depth of removal controlled by the patterning process, and can be adjusted according to actual needs, and are not limited to those listed.

藉由上述方法,可製作出陶瓷元件10。在陶瓷元件10中,可依據製程設計需求來選擇表面活化材料106與第一圖案化金屬層108a的材料組合。舉例來說,表面活化材料106可為鈀,且第一圖案化金屬層108a的材料可為銀。By the above method, the ceramic element 10 can be manufactured. In the ceramic element 10, a material combination of the surface activation material 106 and the first patterned metal layer 108a may be selected according to a process design requirement. For example, the surface-active material 106 may be palladium, and the material of the first patterned metal layer 108a may be silver.

基於上述實施例可知,在上述陶瓷元件10的製造方法中,由於第一圖案化金屬層108a是藉由無電鍍製程與圖案化製程形成在經表面活化處理的陶瓷材料100的表面上,並非藉由高溫燒結製程所形成,因此第一圖案化金屬層108a中的金屬線路具有良好的位置精度。Based on the above embodiments, it can be known that in the manufacturing method of the ceramic element 10 described above, since the first patterned metal layer 108a is formed on the surface of the surface-treated ceramic material 100 by an electroless plating process and a patterning process, it is not borrowed. It is formed by a high-temperature sintering process, so the metal lines in the first patterned metal layer 108a have good position accuracy.

以下,藉由圖1D與圖2來說明上述實施例的陶瓷元件10。Hereinafter, the ceramic element 10 according to the embodiment will be described with reference to FIGS. 1D and 2.

請參照圖1D與圖2,陶瓷元件10包括陶瓷材料100、圖案化金屬結構與表面活化材料106。陶瓷元件10可為濾波器(如,高頻濾波器)或全球定位系統用天線。在此實施例中,陶瓷元件10是以濾波器為例來進行說明。陶瓷材料100的表面至少包括非共平面的第一表面S1與第二表面S2,且在陶瓷材料100的表面上具有微小的多個凹陷104。在陶瓷材料100中可具有貫穿孔102。當陶瓷元件10為濾波器時,第一表面S1與第二表面S2中的一者可為電極面,且第一表面S1與第二表面S2中的另一者可為訊號結構面。1D and FIG. 2, the ceramic element 10 includes a ceramic material 100, a patterned metal structure, and a surface activation material 106. The ceramic element 10 may be a filter (eg, a high-frequency filter) or an antenna for a global positioning system. In this embodiment, the ceramic element 10 is described by taking a filter as an example. The surface of the ceramic material 100 includes at least a non-coplanar first surface S1 and a second surface S2, and the surface of the ceramic material 100 has a small number of depressions 104. The ceramic material 100 may have a through hole 102. When the ceramic element 10 is a filter, one of the first surface S1 and the second surface S2 may be an electrode surface, and the other of the first surface S1 and the second surface S2 may be a signal structure surface.

圖案化金屬結構可為單層結構或多層結構。在此實施例中,圖案化金屬結構是以第一圖案化金屬層108a的單層結構為例來進行說明。第一圖案化金屬層108a(圖案化金屬結構)設置於第一表面S1與第二表面S2上,且更可設置於陶瓷材料100的其他表面上。此外,部分第一圖案化金屬層108a(圖案化金屬結構)可設置於貫穿孔102的表面上。第一圖案化金屬層108a的材料例如是銅、鎳、銀或金。The patterned metal structure may be a single-layer structure or a multi-layer structure. In this embodiment, the patterned metal structure is described using the single-layered structure of the first patterned metal layer 108a as an example. The first patterned metal layer 108 a (patterned metal structure) is disposed on the first surface S1 and the second surface S2, and may be disposed on other surfaces of the ceramic material 100. In addition, a portion of the first patterned metal layer 108 a (patterned metal structure) may be disposed on a surface of the through hole 102. The material of the first patterned metal layer 108a is, for example, copper, nickel, silver, or gold.

表面活化材料106設置在凹陷104的表面上,且位於陶瓷材料100與第一圖案化金屬層108a(圖案化金屬結構)的介面。表面活化材料106例如是鈀、金、鉑、銀或其化合物。在陶瓷材料100與第一圖案化金屬層108a(圖案化金屬結構)的介面處,以陶瓷材料100與表面活化材料106的總量計,表面活化材料106的含量例如是5重量百分比(wt%)以下,例如可為0.1wt%至5wt%。The surface activation material 106 is disposed on the surface of the recess 104 and is located at the interface between the ceramic material 100 and the first patterned metal layer 108 a (patterned metal structure). The surface-active material 106 is, for example, palladium, gold, platinum, silver, or a compound thereof. At the interface between the ceramic material 100 and the first patterned metal layer 108a (patterned metal structure), based on the total amount of the ceramic material 100 and the surface activating material 106, the content of the surface activating material 106 is, for example, 5 weight percent (wt%). ) Or less, for example, from 0.1 wt% to 5 wt%.

此外,陶瓷元件10中的各構件的材料、規格、形成方法或功效已於上述實施例中進行詳盡地說明,所以於此不再重複說明。In addition, the materials, specifications, forming methods, or effects of the components in the ceramic element 10 have been described in detail in the above embodiments, so they will not be repeated here.

基於上述實施例可知,在陶瓷元件100中,由於表面活化材料106設置在陶瓷材料100的凹陷104的表面上,所以可利用無電鍍製程與圖案化製程在具有表面活化材料106的陶瓷材料100的表面上形成第一圖案化金屬層108a(圖案化金屬結構),且無須進行高溫燒結製程,因此第一圖案化金屬層108a(圖案化金屬結構)中的金屬線路可具有良好的位置精度。Based on the above embodiments, it can be known that, in the ceramic element 100, since the surface activating material 106 is disposed on the surface of the recess 104 of the ceramic material 100, the electroless plating process and the patterning process can be used in the ceramic material 100 having the surface activating material 106. The first patterned metal layer 108a (patterned metal structure) is formed on the surface, and a high temperature sintering process is not required. Therefore, the metal circuit in the first patterned metal layer 108a (patterned metal structure) can have good position accuracy.

圖3A至圖3D為本揭露另一實施例接續圖1C的陶瓷元件的製造流程示意圖。圖4為沿著圖3D中的II-II’剖面線的剖面圖。圖3A與圖1C中相同的構件已於上述實施例中進行說明,所以於此不再重複說明。FIG. 3A to FIG. 3D are schematic diagrams of a manufacturing process of the ceramic component subsequent to FIG. 1C according to another embodiment of the present disclosure. Fig. 4 is a cross-sectional view taken along a line II-II 'in Fig. 3D. The same components in FIG. 3A and FIG. 1C have been described in the above embodiment, so the description will not be repeated here.

請參照圖3A,在形成圖1C的第一金屬層108之後,並於進行圖案化製程之前,在第一金屬層108上形成第二金屬層110。第二金屬層110可用以保護第一金屬層108,以防止第一金屬層108產生氧化。第一金屬層108的厚度可大於第二金屬層110的厚度。第二金屬層110的形成方法例如是電鍍法或無電鍍法。第二金屬層110的材料例如是電鍍金屬或無電鍍金屬。電鍍金屬例如是銅、鎳、銀、金、白金、錫或其合金,且無電鍍金屬例如是銅、鎳、銀、金、白金或鈀。Referring to FIG. 3A, after the first metal layer 108 of FIG. 1C is formed and before the patterning process is performed, a second metal layer 110 is formed on the first metal layer 108. The second metal layer 110 can protect the first metal layer 108 to prevent the first metal layer 108 from being oxidized. The thickness of the first metal layer 108 may be greater than the thickness of the second metal layer 110. A method for forming the second metal layer 110 is, for example, a plating method or an electroless plating method. The material of the second metal layer 110 is, for example, a plated metal or an electroless plated metal. The electroplated metal is, for example, copper, nickel, silver, gold, platinum, tin, or an alloy thereof, and the electroless metal is, for example, copper, nickel, silver, gold, platinum, or palladium.

請參照圖3B,對第二金屬層110進行雷射圖案化製程,而形成第二圖案化金屬層110a。在此實施例中,可藉由雷射圖案化製程移除部分第二金屬層110,而暴露出第一金屬層108的部分表面。Referring to FIG. 3B, a laser patterning process is performed on the second metal layer 110 to form a second patterned metal layer 110a. In this embodiment, a part of the surface of the first metal layer 108 may be exposed by removing a portion of the second metal layer 110 by a laser patterning process.

請參照圖3C,以第二圖案化金屬層110a作為罩幕,對第一金屬層108進行蝕刻製程。在此實施例中,可藉由蝕刻製程移除部分第一金屬層108與部分表面活化材料106,而暴露出陶瓷材料100的部分表面。蝕刻製程例如是濕式蝕刻製程,且所使用的蝕刻劑例如是磷酸、硫酸或上述材料與雙氧水的混合物。藉此,可對第一金屬層108進行圖案化,而形成第一圖案化金屬層108a(請參照圖4)存在於第二圖案化金屬層110a與陶瓷材料100之間。Referring to FIG. 3C, an etching process is performed on the first metal layer 108 by using the second patterned metal layer 110a as a mask. In this embodiment, part of the first metal layer 108 and part of the surface activating material 106 can be removed by an etching process, and a part of the surface of the ceramic material 100 can be exposed. The etching process is, for example, a wet etching process, and the etchant used is, for example, phosphoric acid, sulfuric acid, or a mixture of the above materials and hydrogen peroxide. Thereby, the first metal layer 108 can be patterned, and a first patterned metal layer 108 a (see FIG. 4) is formed between the second patterned metal layer 110 a and the ceramic material 100.

在此實施例中,雖然對第一金屬層108所進行的圖案化製程是以上述方法為例來進行說明,但本揭露並不以此為限。舉例來說,可直接對圖3A中的第二金屬層110與位於其下方的第一金屬層108進行雷射圖案化製程,而形成圖3C中的第二圖案化金屬層110a與位於其下方的第一圖案化金屬層108a(請參照圖4)。In this embodiment, although the patterning process performed on the first metal layer 108 is described by taking the above method as an example, the disclosure is not limited thereto. For example, a laser patterning process may be directly performed on the second metal layer 110 and the first metal layer 108 located below it in FIG. 3A to form the second patterned metal layer 110a and located below it in FIG. 3C. The first patterned metal layer 108a (see FIG. 4).

請參照圖3D,可選擇性地藉由無電鍍製程在第二圖案化金屬層110a上形成第三圖案化金屬層112。第三圖案化金屬層112可用以增加可焊性。在此實施例中,第三圖案化金屬層112只會形成在第二圖案化金屬層110a上,而不會形成在由第二圖案化金屬層110a所暴露出的陶瓷材料100的表面上。第三圖案化金屬層112的材料例如是電鍍金屬或無電鍍金屬,如金、鎳、銀、錫、白金或其合金。Referring to FIG. 3D, a third patterned metal layer 112 can be selectively formed on the second patterned metal layer 110a by an electroless plating process. The third patterned metal layer 112 may be used to increase solderability. In this embodiment, the third patterned metal layer 112 is only formed on the second patterned metal layer 110a, and is not formed on the surface of the ceramic material 100 exposed by the second patterned metal layer 110a. The material of the third patterned metal layer 112 is, for example, an electroplated metal or an electroless metal, such as gold, nickel, silver, tin, platinum, or an alloy thereof.

藉由上述方法,可製作出陶瓷元件20。在陶瓷元件20中,可依據製程設計需求來選擇表面活化材料106、第一圖案化金屬層108a、第二圖案化金屬層110a與第三圖案化金屬層112的材料組合。舉例來說,表面活化材料106可為鈀,第一圖案化金屬層108的材料可為銅,第二圖案化金屬層110a的材料可為鎳,且第三圖案化金屬層112的材料可為金。By the above method, the ceramic element 20 can be manufactured. In the ceramic element 20, a material combination of the surface activation material 106, the first patterned metal layer 108a, the second patterned metal layer 110a, and the third patterned metal layer 112 may be selected according to process design requirements. For example, the surface activation material 106 may be palladium, the material of the first patterned metal layer 108 may be copper, the material of the second patterned metal layer 110a may be nickel, and the material of the third patterned metal layer 112 may be gold.

基於上述實施例可知,在上述陶瓷元件20的製造方法中,由於圖案化金屬結構114是藉由電鍍或無電鍍製程與圖案化製程形成在經表面活化處理的陶瓷材料100的表面上,並非藉由高溫燒結製程所形成,因此圖案化金屬結構114中的金屬線路具有良好的位置精度。Based on the above embodiments, it can be known that, in the manufacturing method of the ceramic element 20, the patterned metal structure 114 is formed on the surface of the surface-treated ceramic material 100 by an electroplating or electroless plating process and a patterning process. Formed by a high-temperature sintering process, the metal lines in the patterned metal structure 114 have good position accuracy.

以下,藉由圖3D與圖4來說明上述實施例的陶瓷元件20。Hereinafter, the ceramic element 20 of the above embodiment will be described with reference to FIGS. 3D and 4.

請同時參照圖1D、圖2、圖3D與圖4,陶瓷元件20與陶瓷元件10相似,但要注意的是陶瓷元件20的圖案化金屬結構114為多層結構。圖案化金屬結構114包括第一圖案化金屬層108a與第二圖案化金屬層110a,且更可選擇性地包括第三圖案化金屬層112。圖案化金屬結構114設置於第一表面S1與第二表面S2上,且更可設置於陶瓷材料100的其他表面上。此外,部分圖案化金屬結構114可設置於貫穿孔102的表面上。表面活化材料106位於陶瓷材料100與圖案化金屬結構114的介面。Please refer to FIG. 1D, FIG. 2, FIG. 3D and FIG. 4 at the same time. The ceramic element 20 is similar to the ceramic element 10, but it should be noted that the patterned metal structure 114 of the ceramic element 20 is a multilayer structure. The patterned metal structure 114 includes a first patterned metal layer 108 a and a second patterned metal layer 110 a, and may further include a third patterned metal layer 112. The patterned metal structure 114 is disposed on the first surface S1 and the second surface S2, and may be disposed on other surfaces of the ceramic material 100. In addition, a portion of the patterned metal structure 114 may be disposed on a surface of the through-hole 102. The surface activation material 106 is located at an interface between the ceramic material 100 and the patterned metal structure 114.

第一圖案化金屬層108a設置於第一表面S1與第二表面S2上,且更可設置於陶瓷材料100的其他表面上。此外,部分第一圖案化金屬層108a可設置於貫穿孔102的表面上。第一圖案化金屬層108a的材料例如是銅、鎳、銀或金。The first patterned metal layer 108 a is disposed on the first surface S1 and the second surface S2, and may be disposed on other surfaces of the ceramic material 100. In addition, a portion of the first patterned metal layer 108 a may be disposed on a surface of the through-hole 102. The material of the first patterned metal layer 108a is, for example, copper, nickel, silver, or gold.

第二圖案化金屬層110a設置於第一圖案化金屬層108a上。第一圖案化金屬層108a的厚度可大於第二圖案化金屬層110a的厚度。第二圖案化金屬層110a的材料例如是電鍍金屬或無電鍍金屬。電鍍金屬例如是銅、鎳、銀、金、白金、錫或其合金,且無電鍍金屬例如是銅、鎳、銀、金、白金或鈀。The second patterned metal layer 110a is disposed on the first patterned metal layer 108a. The thickness of the first patterned metal layer 108a may be greater than the thickness of the second patterned metal layer 110a. The material of the second patterned metal layer 110a is, for example, a plated metal or an electroless plated metal. The electroplated metal is, for example, copper, nickel, silver, gold, platinum, tin, or an alloy thereof, and the electroless metal is, for example, copper, nickel, silver, gold, platinum, or palladium.

第三圖案化金屬層112設置於第二圖案化金屬層110a上。第三圖案化金屬層112的材料例如是電鍍金屬或無電鍍金屬,如金、鎳、銀、錫、白金或其合金。The third patterned metal layer 112 is disposed on the second patterned metal layer 110a. The material of the third patterned metal layer 112 is, for example, an electroplated metal or an electroless metal, such as gold, nickel, silver, tin, platinum, or an alloy thereof.

此外,陶瓷元件20與陶瓷元件10中相似的構件使用相同的符號表示並省略其說明。In addition, similar components in the ceramic element 20 and the ceramic element 10 are denoted by the same symbols, and descriptions thereof are omitted.

基於上述實施例可知,在陶瓷元件20中,由於表面活化材料106設置在陶瓷材料100的凹陷104的表面上,所以可利用無電鍍製程與圖案化製程在具有表面活化材料106的陶瓷材料100的表面上形成圖案化金屬結構114,且無須進行高溫燒結製程,因此圖案化金屬結構114中的金屬線路可具有良好的位置精度。Based on the above embodiment, it can be known that, in the ceramic element 20, since the surface-active material 106 is disposed on the surface of the recess 104 of the ceramic material 100, the electroless plating process and the patterning process can be used in the ceramic material 100 having the surface-active material 106. The patterned metal structure 114 is formed on the surface, and a high-temperature sintering process is not required. Therefore, the metal lines in the patterned metal structure 114 can have good position accuracy.

<實驗例>< Experimental example >

<實例1:陶瓷濾波器的製作><Example 1: Production of ceramic filter>

首先,進行濕式蝕刻製程,將鈦酸鈣鎂陶瓷材料浸泡於2%氫氟酸(HF)溶液中10分鐘,以於陶瓷材料表面形成微蝕的多個凹陷,且可使得表面粗糙度Ra由0.2微米提升至0.5微米。接著,進行表面活化處理,將形成有多個凹陷的陶瓷材料浸泡於含有氯化亞錫(還原劑)與氯化鈀(反應物)的溶液中進行表面活化處理,使鈀原子(表面活化材料)附著於微蝕的多個凹陷中。然後,再進行無電鍍製程,將經表面活化處理的陶瓷材料放入無電鍍銅溶液中30分鐘,以於陶瓷材料的表面與深寬比為8的貫穿孔中沉積銅金屬,再利用電鍍銅製程再次沉積銅金屬,使銅金屬的厚度達到目標值。接下來,將電鍍鎳或無電鍍鎳沉積於銅金屬上方,再對鎳層進行雷射圖案化製程。之後,再以經圖案化後的鎳層作為罩幕層,以磷酸與雙氧水的混合物作為蝕刻劑,對銅金屬層進行蝕刻製程。最後,於鎳層上進行無電鍍金製程,而可得陶瓷濾波器。First, a wet etching process is performed, and the calcium magnesium titanate ceramic material is immersed in a 2% hydrofluoric acid (HF) solution for 10 minutes to form micro-etched depressions on the surface of the ceramic material, and the surface roughness Ra can be made From 0.2 microns to 0.5 microns. Next, a surface activation treatment is performed, a ceramic material having a plurality of depressions formed therein is immersed in a solution containing stannous chloride (reducing agent) and palladium chloride (reactant) to perform surface activation treatment, so that palladium atoms (surface activation material) ) Attached to a plurality of depressions in the micro-etching. Then, an electroless plating process is performed, and the surface-activated ceramic material is put into an electroless copper solution for 30 minutes, so that copper metal is deposited on the surface of the ceramic material and the through-hole having an aspect ratio of 8, and the electroplated copper is used. During the process, copper metal was deposited again, so that the thickness of the copper metal reached the target value. Next, electroplated nickel or electroless nickel is deposited on the copper metal, and then a laser patterning process is performed on the nickel layer. Then, the patterned nickel layer is used as a mask layer, and a mixture of phosphoric acid and hydrogen peroxide is used as an etchant to perform an etching process on the copper metal layer. Finally, an electroless gold plating process is performed on the nickel layer to obtain a ceramic filter.

<實例2:表面活化材料的檢測><Example 2: Detection of surface activated materials>

圖5A為使用SEM/EDS對陶瓷濾波器中經表面活化處理前的陶瓷材料進行表面活化材料檢測的結果圖。圖5B為使用SEM/EDS對陶瓷濾波器中經表面活化處理後的陶瓷材料進行表面活化材料檢測的結果圖。FIG. 5A is a graph showing the results of detecting a surface-activated material on a ceramic material before surface activation treatment in a ceramic filter using a SEM / EDS. FIG. 5B is a graph showing the results of surface activation material detection on a ceramic material after surface activation treatment in a ceramic filter using SEM / EDS.

使用掃描式電子顯微鏡附加能量分散光譜儀(Scanning Electron Microscope/Energy Dispersive Spectrometer,SEM/EDS)對實例1的陶瓷濾波器中的經表面活化處理前後的陶瓷材料進行表面活化材料檢測的結果如圖5A、圖5B、表1與表2所示。Scanning Electron Microscope / Energy Dispersive Spectrometer (SEM / EDS) was used to detect the surface activation material of the ceramic material before and after the surface activation treatment in the ceramic filter of Example 1. The results are shown in Figure 5A, Figure 5B, Tables 1 and 2 show.

表1 經表面活化處理前的陶瓷材料的成份 Table 1 Composition of ceramic materials before surface activation treatment

表2 經表面活化處理後的陶瓷材料的成份 Table 2 Composition of ceramic materials after surface activation treatment

由圖5A、圖5B、表1與表2可知,在對陶瓷材料進行酸蝕刻製程之前,陶瓷材料的成份不含鈀原子。在對陶瓷材料進行酸蝕刻製程與表面活化處理之後,陶瓷材料的成份含有0.6wt%的鈀原子。As can be seen from FIG. 5A, FIG. 5B, Tables 1 and 2, before the ceramic material is subjected to the acid etching process, the composition of the ceramic material does not contain palladium atoms. After the ceramic material is subjected to the acid etching process and the surface activation treatment, the composition of the ceramic material contains 0.6% by weight of palladium atoms.

綜上所述,在本揭露所提出的陶瓷元件及其製造方法中,由於表面活化材料設置在陶瓷材料的凹陷的表面上,所以可利用無電鍍製程與圖案化製程在具有表面活化材料的陶瓷材料的表面上形成圖案化金屬結構,且無須進行高溫燒結製程,因此圖案化金屬結構中的金屬線路可具有良好的位置精度。In summary, in the ceramic component and the manufacturing method thereof disclosed in the present disclosure, since the surface-activating material is disposed on the recessed surface of the ceramic material, the electroless plating process and the patterning process can be used to apply the ceramic on the surface-active material. A patterned metal structure is formed on the surface of the material, and a high temperature sintering process is not required. Therefore, the metal circuit in the patterned metal structure can have good position accuracy.

雖然本揭露已以實施例揭露如上,然其並非用以限定本揭露,任何所屬技術領域中具有通常知識者,在不脫離本揭露的精神和範圍內,當可作些許的更動與潤飾,故本揭露的保護範圍當視後附的申請專利範圍所界定者為準。Although the present disclosure has been disclosed as above by way of example, it is not intended to limit the present disclosure. Any person with ordinary knowledge in the technical field should make some changes and modifications without departing from the spirit and scope of the present disclosure. The scope of protection of this disclosure shall be determined by the scope of the attached patent application.

100‧‧‧陶瓷材料100‧‧‧Ceramic materials

102‧‧‧貫穿孔102‧‧‧through hole

104‧‧‧凹陷104‧‧‧ Sag

106‧‧‧表面活化材料106‧‧‧ surface activated materials

108‧‧‧第一金屬層108‧‧‧ first metal layer

108a‧‧‧第一圖案化金屬層108a‧‧‧first patterned metal layer

110‧‧‧第二金屬層110‧‧‧Second metal layer

110a‧‧‧第二圖案化金屬層110a‧‧‧second patterned metal layer

112‧‧‧第三圖案化金屬層112‧‧‧ the third patterned metal layer

114‧‧‧圖案化金屬結構114‧‧‧patterned metal structure

S1‧‧‧第一表面S1‧‧‧First surface

S2‧‧‧第二表面S2‧‧‧Second surface

圖1A至圖1D為本揭露一實施例的陶瓷元件的製造流程示意圖。 圖2為沿著圖1D中的I-I’剖面線的剖面圖。 圖3A至圖3D為本揭露另一實施例接續圖1C的陶瓷元件的製造流程示意圖。 圖4為沿著圖3D中的II-II’剖面線的剖面圖。 圖5A為使用掃描式電子顯微鏡附加能量分散光譜儀(Scanning Electron Microscope/Energy Dispersive Spectrometer,SEM/EDS)對陶瓷濾波器中經表面活化處理前的陶瓷材料進行表面活化材料檢測的結果圖。 圖5B為使用SEM/EDS對陶瓷濾波器中經表面活化處理後的陶瓷材料進行表面活化材料檢測的結果圖。1A to 1D are schematic diagrams of a manufacturing process of a ceramic element according to an embodiment of the disclosure. Fig. 2 is a cross-sectional view taken along a line I-I 'in Fig. 1D. FIG. 3A to FIG. 3D are schematic diagrams of a manufacturing process of the ceramic component subsequent to FIG. 1C according to another embodiment of the present disclosure. Fig. 4 is a cross-sectional view taken along a line II-II 'in Fig. 3D. FIG. 5A is a diagram showing the results of detecting a surface-activated material on a ceramic material before surface activation treatment in a ceramic filter using a scanning electron microscope additional energy dispersive spectrometer (SEM / EDS). FIG. 5B is a graph showing the results of surface activation material detection on a ceramic material after surface activation treatment in a ceramic filter using SEM / EDS.

Claims (31)

一種陶瓷元件,包括: 一陶瓷材料,其中該陶瓷材料的表面至少包括非共平面的一第一表面與一第二表面,且在該陶瓷材料的表面上具有多個凹陷; 一圖案化金屬結構,設置於該第一表面與該第二表面上;以及 一表面活化材料,設置在該些凹陷的表面上,且位於該陶瓷材料與該圖案化金屬結構的介面。A ceramic element includes: a ceramic material, wherein the surface of the ceramic material includes at least a non-coplanar first surface and a second surface, and has a plurality of depressions on the surface of the ceramic material; a patterned metal structure Is disposed on the first surface and the second surface; and a surface activating material is disposed on the recessed surfaces and is located at an interface between the ceramic material and the patterned metal structure. 如申請專利範圍第1項所述的陶瓷元件,其中該陶瓷材料包括鈦酸鈣(CaTiO3 )、鈦酸鎂(MgTiO3 )、鈦酸鋅(ZnTiO3 )或其組合。The scope of the patent application of the ceramic element Item 1, wherein the ceramic material comprises calcium titanate (CaTiO 3), magnesium titanate (MgTiO 3), zinc titanate (ZnTiO 3), or combinations thereof. 如申請專利範圍第1項所述的陶瓷元件,其中該第一表面與該第二表面彼此相鄰或不相鄰。The ceramic element according to item 1 of the patent application scope, wherein the first surface and the second surface are adjacent or non-adjacent to each other. 如申請專利範圍第1項所述的陶瓷元件,其中由該陶瓷材料上的該些凹陷所形成的表面粗糙度小於5微米。The ceramic element according to item 1 of the scope of patent application, wherein the surface roughness formed by the recesses on the ceramic material is less than 5 microns. 如申請專利範圍第1項所述的陶瓷元件,其中在該陶瓷材料中具有至少一個貫穿孔,且部分該圖案化金屬結構設置於該至少一個貫穿孔的表面上。The ceramic element according to item 1 of the patent application scope, wherein the ceramic material has at least one through hole, and a portion of the patterned metal structure is disposed on a surface of the at least one through hole. 如申請專利範圍第5項所述的陶瓷元件,其中該至少一個貫穿孔的深寬比為12以下。The ceramic element according to item 5 of the scope of patent application, wherein the aspect ratio of the at least one through hole is 12 or less. 如申請專利範圍第1項所述的陶瓷元件,其中該圖案化金屬結構包括一第一圖案化金屬層。The ceramic element according to item 1 of the application, wherein the patterned metal structure includes a first patterned metal layer. 如申請專利範圍第7項所述的陶瓷元件,其中該第一圖案化金屬層的材料包括銅、鎳、銀或金。The ceramic element according to item 7 of the application, wherein a material of the first patterned metal layer includes copper, nickel, silver, or gold. 如申請專利範圍第7項所述的陶瓷元件,其中該圖案化金屬結構更包括一第二圖案化金屬層,其中該第二圖案化金屬層設置於該第一圖案化金屬層上。The ceramic element according to item 7 of the patent application scope, wherein the patterned metal structure further includes a second patterned metal layer, wherein the second patterned metal layer is disposed on the first patterned metal layer. 如申請專利範圍第9項所述的陶瓷元件,其中該第一圖案化金屬層的厚度大於該第二圖案化金屬層的厚度。The ceramic element according to item 9 of the application, wherein the thickness of the first patterned metal layer is greater than the thickness of the second patterned metal layer. 如申請專利範圍第9項所述的陶瓷元件,其中該第二圖案化金屬層的材料包括一電鍍金屬或一無電鍍金屬。The ceramic element according to item 9 of the application, wherein a material of the second patterned metal layer includes an electroplated metal or an electroless metal. 如申請專利範圍第11項所述的陶瓷元件,其中該電鍍金屬包括銅、鎳、銀、金、白金、錫或其合金,且該無電鍍金屬包括銅、鎳、銀、金、白金或鈀。The ceramic element according to item 11 of the application, wherein the electroplated metal includes copper, nickel, silver, gold, platinum, tin, or an alloy thereof, and the electroless metal includes copper, nickel, silver, gold, platinum, or palladium . 如申請專利範圍第9項所述的陶瓷元件,其中該圖案化金屬結構更包括一第三圖案化金屬層,其中該第三圖案化金屬層設置於該第二圖案化金屬層上。The ceramic element according to item 9 of the application, wherein the patterned metal structure further includes a third patterned metal layer, and the third patterned metal layer is disposed on the second patterned metal layer. 如申請專利範圍第13項所述的陶瓷元件,其中該第三圖案化金屬層的材料包括一電鍍金屬或一無電鍍金屬。The ceramic element according to item 13 of the application, wherein the material of the third patterned metal layer includes an electroplated metal or an electroless metal. 如申請專利範圍第14項所述的陶瓷元件,其中該電鍍或無電鍍金屬包括金、鎳、銀、錫、白金或其合金。The ceramic element according to item 14 of the application, wherein the plated or electroless metal includes gold, nickel, silver, tin, platinum, or an alloy thereof. 如申請專利範圍第1項所述的陶瓷元件,其中該表面活化材料包括鈀、金、鉑、銀或其化合物。The ceramic element according to item 1 of the patent application scope, wherein the surface-active material includes palladium, gold, platinum, silver, or a compound thereof. 如申請專利範圍第1項所述的陶瓷元件,其中在該陶瓷材料與該圖案化金屬結構的介面處,以該陶瓷材料與該表面活化材料的總量計,該表面活化材料的含量為5wt%以下。The ceramic element according to item 1 of the scope of patent application, wherein at the interface between the ceramic material and the patterned metal structure, the content of the surface activated material is 5wt based on the total amount of the ceramic material and the surface activated material %the following. 如申請專利範圍第1項所述的陶瓷元件,其中該陶瓷元件包括濾波器或全球定位系統用天線。The ceramic element according to item 1 of the patent application scope, wherein the ceramic element includes a filter or an antenna for a global positioning system. 一種陶瓷元件的製造方法,包括: 提供一陶瓷材料; 在該陶瓷材料的表面上形成多個凹陷; 在形成該些凹陷之後,對該陶瓷材料的表面進行一表面活化處理; 藉由一無電鍍製程在經該表面活化處理的該陶瓷材料的表面上形成一第一金屬層;以及 對該第一金屬層進行一圖案化製程,而形成一第一圖案化金屬層。A method for manufacturing a ceramic element includes: providing a ceramic material; forming a plurality of depressions on the surface of the ceramic material; after forming the depressions, performing a surface activation treatment on the surface of the ceramic material; The manufacturing process forms a first metal layer on the surface of the ceramic material subjected to the surface activation treatment; and performs a patterning process on the first metal layer to form a first patterned metal layer. 如申請專利範圍第19項所述的陶瓷元件的製造方法,其中在該陶瓷材料中具有至少一個貫穿孔,且該第一金屬層更形成於該至少一個貫穿孔的表面上。The method for manufacturing a ceramic element according to item 19 of the application, wherein the ceramic material has at least one through hole, and the first metal layer is further formed on a surface of the at least one through hole. 如申請專利範圍第19項所述的陶瓷元件的製造方法,其中該陶瓷材料的表面至少包括非共平面的一第一表面與一第二表面,且該第一圖案化金屬層設置於該第一表面與該第二表面上。The method for manufacturing a ceramic element according to item 19 of the scope of patent application, wherein the surface of the ceramic material includes at least a non-coplanar first surface and a second surface, and the first patterned metal layer is disposed on the first A surface and the second surface. 如申請專利範圍第21項所述的陶瓷元件的製造方法,其中該第一表面與該第二表面彼此相鄰或不相鄰。The method for manufacturing a ceramic element according to item 21 of the application, wherein the first surface and the second surface are adjacent or non-adjacent to each other. 如申請專利範圍第19項所述的陶瓷元件的製造方法,其中該些凹陷的形成方法包括對該陶瓷材料進行一濕式蝕刻製程。The method for manufacturing a ceramic element according to item 19 of the scope of the patent application, wherein the method for forming the depressions includes performing a wet etching process on the ceramic material. 如申請專利範圍第19項所述的陶瓷元件的製造方法,其中該表面活化處理包括使一反應物與一還原劑在該陶瓷材料的表面進行反應,其中該反應物包括氯化鈀、醋酸鈀、聚乙烯吡咯烷酮-鈀、聚乙烯醇-鈀、氯化金、聚乙烯吡咯烷酮-鉑、聚乙烯醇-鉑、聚乙烯吡咯烷酮-銀、聚乙烯醇-銀或其組合,且該還原劑包括氯化亞錫、甲醛或亞磷酸鈉。The method for manufacturing a ceramic element according to item 19 of the application, wherein the surface activation treatment includes reacting a reactant and a reducing agent on the surface of the ceramic material, wherein the reactant includes palladium chloride and palladium acetate. , Polyvinylpyrrolidone-palladium, polyvinyl alcohol-palladium, gold chloride, polyvinylpyrrolidone-platinum, polyvinyl alcohol-platinum, polyvinylpyrrolidone-silver, polyvinyl alcohol-silver, or a combination thereof, and the reducing agent includes chlorine Stannous, formaldehyde or sodium phosphite. 如申請專利範圍第19項所述的陶瓷元件的製造方法,其中該第一金屬層的形成方法更包括在進行該無電鍍製程之後,進行電鍍製程。The method for manufacturing a ceramic element according to item 19 of the scope of the patent application, wherein the method for forming the first metal layer further includes performing an electroplating process after performing the electroless plating process. 如申請專利範圍第19項所述的陶瓷元件的製造方法,其中該圖案化製程包括一雷射圖案化製程。The method for manufacturing a ceramic element according to item 19 of the application, wherein the patterning process includes a laser patterning process. 如申請專利範圍第19項所述的陶瓷元件的製造方法,更包括在進行該圖案化製程之前,在該第一金屬層上形成一第二金屬層。The method for manufacturing a ceramic element according to item 19 of the scope of patent application, further includes forming a second metal layer on the first metal layer before performing the patterning process. 如申請專利範圍第27項所述的陶瓷元件的製造方法,其中該第二金屬層的形成方法包括一電鍍法或一無電鍍法。The method for manufacturing a ceramic element according to item 27 of the application, wherein the method for forming the second metal layer includes an electroplating method or an electroless plating method. 如申請專利範圍第27項所述的陶瓷元件的製造方法,其中該圖案化製程包括對該第二金屬層與該第一金屬層進行一雷射圖案化製程。The method for manufacturing a ceramic element according to item 27 of the application, wherein the patterning process includes performing a laser patterning process on the second metal layer and the first metal layer. 如申請專利範圍第27項所述的陶瓷元件的製造方法,其中該圖案化製程包括: 對該第二金屬層進行一雷射圖案化製程,而形成一第二圖案化金屬層;以及 以該第二圖案化金屬層作為罩幕,對該第一金屬層進行一蝕刻製程。The method for manufacturing a ceramic element as described in claim 27, wherein the patterning process includes: performing a laser patterning process on the second metal layer to form a second patterned metal layer; and The second patterned metal layer is used as a mask, and an etching process is performed on the first metal layer. 如申請專利範圍第30項所述的陶瓷元件的製造方法,更包括在進行該圖案化製程之後,藉由該無電鍍製程在該第二圖案化金屬層上形成一第三圖案化金屬層。The method for manufacturing a ceramic element according to item 30 of the scope of patent application, further includes forming a third patterned metal layer on the second patterned metal layer by the electroless plating process after the patterning process is performed.
TW106142946A 2017-12-07 2017-12-07 Ceramic component and method of manufacturing same TWI649193B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW106142946A TWI649193B (en) 2017-12-07 2017-12-07 Ceramic component and method of manufacturing same
US15/842,902 US10669209B2 (en) 2017-12-07 2017-12-15 Ceramic device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW106142946A TWI649193B (en) 2017-12-07 2017-12-07 Ceramic component and method of manufacturing same

Publications (2)

Publication Number Publication Date
TWI649193B TWI649193B (en) 2019-02-01
TW201924929A true TW201924929A (en) 2019-07-01

Family

ID=66213478

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106142946A TWI649193B (en) 2017-12-07 2017-12-07 Ceramic component and method of manufacturing same

Country Status (2)

Country Link
US (1) US10669209B2 (en)
TW (1) TWI649193B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220161343A1 (en) * 2020-11-24 2022-05-26 Raytheon Company Building liquid flow-through plates
CN115125535A (en) * 2021-03-26 2022-09-30 河南平高电气股份有限公司 Ceramic silver plating method for ceramic filter
CN114349519A (en) * 2022-01-19 2022-04-15 江苏宝利金材科技有限公司 Slurry formula and production process of gel-casting ceramic filter

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61121501A (en) * 1984-11-17 1986-06-09 Tdk Corp Dielectric resonator and its production
US5234562A (en) * 1988-11-07 1993-08-10 Matsushita Electric Industrial Co., Ltd. Electroplating apparatus for coating a dielectric resonator
DE19535068C2 (en) 1995-09-21 1997-08-21 Lpkf Cad Cam Systeme Gmbh Coating for the structured production of conductor tracks on the surface of electrically insulating substrates, method for producing the coating and of structured conductor tracks
JP2003212649A (en) 2002-01-16 2003-07-30 Murata Mfg Co Ltd Dielectric porcelain for high-frequency region, dielectric resonator, dielectric filter, dielectric duplexer and transmitter device
US6809612B2 (en) * 2002-04-30 2004-10-26 Cts Corporation Dielectric block signal filters with cost-effective conductive coatings
CA2520100A1 (en) 2003-04-07 2004-10-28 Cts Corporation Low profile ceramic rf filter
US7541893B2 (en) 2005-05-23 2009-06-02 Cts Corporation Ceramic RF filter and duplexer having improved third harmonic response
EP2108239A1 (en) 2007-01-05 2009-10-14 Basf Se Process for producing electrically conductive surfaces
TWI394506B (en) * 2008-10-13 2013-04-21 Unimicron Technology Corp Multilayer three-dimensional circuit structure and manufacturing method thereof
TW201221032A (en) 2010-11-03 2012-05-16 Ta I Technology Co Ltd Cermet heat dissipation board manufacturing method
TWM414036U (en) 2011-04-22 2011-10-11 yong-rong Zhong High pass filter
TWI423751B (en) * 2011-07-08 2014-01-11 Ict Lanto Ltd Method of manufacturing three - dimensional circuit
TWM462745U (en) 2013-04-30 2013-10-01 3D Circuit Taiwan Company Ltd Ceramic laser metallization and metal layer structure
TWI478641B (en) * 2014-01-20 2015-03-21 Rhema Technology & Trading Company Ltd Ceramic circuit board of laser plate copper and manufacturing method thereof
CN205194818U (en) 2015-12-11 2016-04-27 厦门松元电子有限公司 Ceramic medium filter
TWM539186U (en) 2016-10-13 2017-04-01 Cirocomm Tech Corp Improved filter structure

Also Published As

Publication number Publication date
US10669209B2 (en) 2020-06-02
US20190177231A1 (en) 2019-06-13
TWI649193B (en) 2019-02-01

Similar Documents

Publication Publication Date Title
TWI552658B (en) Plating method of circuit substrate, production method of plated circuit substrate, and silver etching liquid
TWI649193B (en) Ceramic component and method of manufacturing same
TWI675942B (en) Method for producing porous copper foil and porous copper foil produced by the same
TWI478641B (en) Ceramic circuit board of laser plate copper and manufacturing method thereof
JP2014241447A5 (en)
WO2013082054A1 (en) Fabricating a conductive trace structure and substrate having the structure
JP2014533775A (en) Metal structure embedded in ceramic substrate
JP2014053608A (en) Circuit board and production method of the same
JP2009111387A (en) Method of manufacturing printed circuit board, and printed circuit board manufactured by the same
JP2017204527A (en) Wiring circuit board and manufacturing method of the same
JP4980439B2 (en) Method for manufacturing metallized ceramic substrate
JP2007324301A (en) Method for manufacturing nitride ceramics circuit board
JP4543943B2 (en) Manufacturing method of lead frame for semiconductor device
JP2008308749A (en) Copper plating method
JPH0329307A (en) Manufacture of laminated ceramic chip capacitor
KR101507913B1 (en) Manufacturing method of printed circuit board
JP2018044205A (en) Plating method
EP0219122B1 (en) Metallized ceramic substrate and method of manufacturing the same
KR20060052664A (en) Printed wiring board
JP2010010538A (en) Method of manufacturing ceramic package and ceramic package
JP4986757B2 (en) Manufacturing method of multi-chip substrate
JP6457304B2 (en) Wiring board
JP2004332036A (en) Electroless plating method
JP2004186597A (en) Manufacturing method of tape carrier for semiconductor device
TW201821382A (en) Method for producing glass plate with film