TWM462745U - Ceramic laser metallization and metal layer structure - Google Patents

Ceramic laser metallization and metal layer structure

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Publication number
TWM462745U
TWM462745U TW102207898U TW102207898U TWM462745U TW M462745 U TWM462745 U TW M462745U TW 102207898 U TW102207898 U TW 102207898U TW 102207898 U TW102207898 U TW 102207898U TW M462745 U TWM462745 U TW M462745U
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Taiwan
Prior art keywords
laser
metal layer
metallization
ceramic
layer structure
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Application number
TW102207898U
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Chinese (zh)
Inventor
Hui-Hsiung Chen
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3D Circuit Taiwan Company Ltd
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Publication date
Application filed by 3D Circuit Taiwan Company Ltd filed Critical 3D Circuit Taiwan Company Ltd
Priority to TW102207898U priority Critical patent/TWM462745U/en
Priority to CN 201320236220 priority patent/CN203261570U/en
Publication of TWM462745U publication Critical patent/TWM462745U/en

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  • Manufacturing Of Printed Wiring (AREA)

Description

陶瓷雷射金屬化以及金屬層結構Ceramic laser metallization and metal layer structure

本創作係有關於一種陶瓷雷射金屬化以及金屬層結構,特別是應用雷射直接成型技術,針對平板以及立體結構進行加工,並透過化鍍或電鍍方式,達到佈線精準以及線路導通之結構。This creation is about a ceramic laser metallization and metal layer structure, especially the application of laser direct molding technology, processing for flat plate and three-dimensional structure, and through the plating or electroplating method to achieve the wiring precision and line conduction structure.

高科技產品日新月異,微型精密的電子零件推陳出新且不斷地被應用於3C產品、汽機車產業、醫療產業等。而立體電路之技術更是占有相當重要之比例。又以雷射直接成型技術(Laser direct structuring,LDS)最為廣泛應用。High-tech products are changing with each passing day, and micro-precision electronic components are constantly being introduced and are constantly being applied to 3C products, automobile and motorcycle industries, and medical industries. The technology of the three-dimensional circuit occupies a very important proportion. Laser direct structuring (LDS) is the most widely used.

然而,LDS所應用之基材大多是為塑膠材料,且所使用之塑膠材料通常為價格昂貴之特殊指定材料;再者,應用在散熱需求高之產品過程中,所衍生的散熱問題也是亟需克服的問題之一。However, most of the substrates used in LDS are plastic materials, and the plastic materials used are usually expensive and specified materials. In addition, in the process of products with high heat dissipation requirements, the heat dissipation problem is also urgently needed. One of the problems overcome.

因此,有鑑於習知缺點,本創作之陶瓷雷射金屬化以及金屬層結構,係取代傳統LDS特殊指定材料,以陶瓷基材為底,並結合LDS之技術,以達到加工容易、佈線精準、線路導通以及散熱性佳及低成本等優點。Therefore, in view of the shortcomings of the prior art, the ceramic laser metallization and metal layer structure of the present invention replaces the traditional LDS special designated material, and the ceramic substrate is used as the base, and combined with the technology of LDS, to achieve easy processing and accurate wiring. Line conduction and good heat dissipation and low cost.

本創作係提供一種陶瓷雷射金屬化以及金屬層結構,其包含有一基材、一立體電路層以及複數金屬層。該基材係為結構之本體;該立體電路層係於該基材上利用二維或三維雷射雕刻,並依所設計之電路軌跡雕刻複數之凹槽;該等金屬層係以電鍍法或化學沉積法將該凹槽鍍上金屬以形成導電性之導電回路。其中,該基材係應用精密陶瓷之材料。The present invention provides a ceramic laser metallization and metal layer structure comprising a substrate, a three-dimensional circuit layer and a plurality of metal layers. The substrate is a body of the structure; the three-dimensional circuit layer is engraved on the substrate by two-dimensional or three-dimensional laser, and engraves a plurality of grooves according to the designed circuit track; the metal layers are electroplated or The recess is plated with a metal to form a conductive conductive loop. Among them, the substrate is a material using a precision ceramic.

與習知技術相較,本創作之一種陶瓷雷射金屬化以及金屬層結構,係以陶瓷基材為結構本體取代傳統LDS特殊指定材料,且該陶瓷材料具有下列之優點:Compared with the prior art, a ceramic laser metallization and metal layer structure of the present invention replaces the traditional LDS special design material with a ceramic substrate as a structural body, and the ceramic material has the following advantages:

(1)機械特性:機械性質佳、尺寸精度高、低翹曲度。(1) Mechanical properties: good mechanical properties, high dimensional accuracy, and low warpage.

(2)熱之特性:耐熱性佳、熱傳導率高、散熱性佳。(2) Characteristics of heat: good heat resistance, high thermal conductivity, and good heat dissipation.

(3)電性特性:絕緣電阻高、金屬化容易、介電常數低。(3) Electrical characteristics: high insulation resistance, easy metallization, and low dielectric constant.

(4)化學特性:無鉛、無毒、化學穩定性佳。(4) Chemical characteristics: lead-free, non-toxic, and chemically stable.

(5)市場特性:材料資源豐富、價格低、技術成熟。(5) Market characteristics: rich material resources, low price and mature technology.

100‧‧‧基材100‧‧‧Substrate

200‧‧‧立體電路層200‧‧‧Three-dimensional circuit layer

202‧‧‧凹槽202‧‧‧ Groove

300‧‧‧金屬層300‧‧‧metal layer

302‧‧‧導通層302‧‧‧ conduction layer

304‧‧‧第一保護層304‧‧‧First protective layer

305‧‧‧中間保護層305‧‧‧Intermediate protective layer

306‧‧‧第二保護層306‧‧‧Second protective layer

第一圖 本創作一種陶瓷雷射金屬化以及金屬層結構之雷射雕刻示意圖。The first figure is a schematic diagram of laser engraving of ceramic laser metallization and metal layer structure.

第二圖 本創作一種陶瓷雷射金屬化以及金屬層結構之金屬化示意圖。The second figure is a schematic diagram of metallization of ceramic laser metallization and metal layer structure.

第三圖 本創作一種陶瓷雷射金屬化以及金屬層結構之另一金屬化示意圖。The third figure is a schematic diagram of another metallization of ceramic laser metallization and metal layer structure.

第四圖 本創作一種陶瓷雷射金屬化以及金屬層結構之又一金屬化示意圖。The fourth figure is a schematic diagram of another metallization of ceramic laser metallization and metal layer structure.

第五圖 本創作一種陶瓷雷射金屬化以及金屬層結構之斷面示意圖。The fifth figure is a schematic sectional view of a ceramic laser metallization and a metal layer structure.

為充分瞭解本創作之目的、特徵及功效,茲藉由下述具體之實施例,並配合所附之圖式,對本創作做一詳細說明,說明如後:請參考第一圖以及第二圖,本創作之一實施例係揭示一種陶瓷雷射金屬化以及金屬層結構,其主要係包含有:一基材100、一立體電路層200以及複數金屬層300。In order to fully understand the purpose, features and effects of this creation, the following specific examples are used, and the accompanying drawings are used to explain the creation in detail. For the following: Please refer to the first figure and the second figure. One embodiment of the present invention discloses a ceramic laser metallization and a metal layer structure, which mainly includes a substrate 100, a three-dimensional circuit layer 200, and a plurality of metal layers 300.

首先,如第一圖所示,該基材100係為本體之結構,其可為立體結構抑或是平板結構。且該基材100係為氧化鋁(Al2 O3 )、氮化鋁(AlN)、氧化鈹(BeO)、氧化鉻(Cr2 O3 )、氧化鋯(ZrO2 )以及氮化矽(Si3 N4 )之陶瓷材料。First, as shown in the first figure, the substrate 100 is a structure of a body, which may be a three-dimensional structure or a flat structure. The substrate 100 is made of aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), beryllium oxide (BeO), chromium oxide (Cr 2 O 3 ), zirconium oxide (ZrO 2 ), and tantalum nitride (Si). 3 N 4 ) ceramic material.

該立體電路層200係於該基材100上應用雷射雕刻,以預先設計之電路軌跡進行加工,並雕刻形成複數之凹槽202。其中,該雷射雕刻係可為二維雷射雕刻或是三維雷射雕刻。又,該雷射雕刻係利用波長532nm之綠光雷射、波長355nm之UV雷射以及波長1064nm之IR雷射之其中之一者。The three-dimensional circuit layer 200 is applied to the substrate 100 by laser engraving, processed by a pre-designed circuit trace, and engraved to form a plurality of grooves 202. Among them, the laser engraving system can be two-dimensional laser engraving or three-dimensional laser engraving. Further, the laser engraving system utilizes one of a green laser beam having a wavelength of 532 nm, a UV laser having a wavelength of 355 nm, and an IR laser having a wavelength of 1064 nm.

請參照第二圖,該金屬層300應用電鍍法或者是化學沉積法,將該凹槽202鍍上金屬以形成導電性之導電回路。其中,該金屬層300係包含銅、鎳、金、銀、鉑、鈀、錫、鋅、鉻或其組合。於本實施例中,各金屬層之順序為(如視圖A所示):a.導通層302,所用之金屬層材料係為銅,其厚度為30μm以內較佳;b.第一保護層304,所用之金屬層材料係為鎳,其作用係保護該導通層302避免氧化,耐磨性較佳,其厚度為10μm以內較佳。Referring to the second figure, the metal layer 300 is plated with metal by electroplating or chemical deposition to form a conductive conductive loop. The metal layer 300 includes copper, nickel, gold, silver, platinum, palladium, tin, zinc, chromium or a combination thereof. In this embodiment, the order of the metal layers is as shown in FIG. A: a. the conductive layer 302, the metal layer material used is copper, and the thickness thereof is preferably within 30 μm; b. the first protective layer 304 The metal layer material used is nickel, and its function is to protect the conductive layer 302 from oxidation, and the wear resistance is better, and the thickness thereof is preferably 10 μm or less.

請參考第三圖,係為本創作一種陶瓷雷射金屬化以及金屬層結構之另一金屬化示意圖,該金屬層300係可包含一第二保護層306,其金屬層之順序為(如視圖B所示):a.導通層302,所用之金屬層材料係為銅,其厚度為30μm以內較佳;b.第一保護層304,所用之金屬層材料係為鎳,其作用係保護該導通層302避免氧化,耐磨性較佳,其厚度為10μm以內較佳;c.第二保護層306,所用之金屬層材料係為金,其作用係為一抗氧化層,其厚度為0.2μm以內較佳。Please refer to the third figure for the purpose of creating a ceramic laser metallization and another metallization of the metal layer structure. The metal layer 300 may include a second protective layer 306. The order of the metal layers is as shown in the figure. B)): a. the conductive layer 302, the metal layer material used is copper, preferably 30 μm or less; b. the first protective layer 304, the metal layer material used is nickel, and its function is to protect the The conductive layer 302 avoids oxidation, and has good wear resistance, and the thickness thereof is preferably 10 μm or less; c. The second protective layer 306 is made of gold, and the effect is an anti-oxidation layer having a thickness of 0.2. It is preferably within μm.

請參考第四圖,係為本創作一種陶瓷雷射金屬化以及金屬層結構之又一金屬化示意圖,該金屬層300更進一步包含一中間保護層305,其金屬層300之順序為(如視圖C所示):a.導通層302,所用之金屬層材料 係為銅,其厚度為30μm以內較佳;b.第一保護層304,所用之金屬層材料係為鎳,其作用係保護該導通層302避免氧化,耐磨性較佳,其厚度為10μm以內較佳;c.中間保護層305,所用之金屬層材料係為鈀,其作用係增加抗腐蝕性(例如:打金線(Wire Bounding)),其厚度為1μm~2μm之間較佳;d.第二保護層306,所用之金屬層材料為金,其作用係為一抗氧化層,其厚度為0.2μm以內較佳。Please refer to the fourth figure, which is a schematic diagram of another metallization of the ceramic laser metallization and metal layer structure. The metal layer 300 further includes an intermediate protective layer 305, and the order of the metal layer 300 is as follows. C shows): a. conductive layer 302, the metal layer material used It is copper, and its thickness is preferably less than 30 μm; b. The first protective layer 304 is made of nickel, and its function is to protect the conductive layer 302 from oxidation, and has good wear resistance, and the thickness thereof is 10 μm. Preferably, c. The intermediate protective layer 305, the metal layer material used is palladium, and its function is to increase corrosion resistance (for example, Wire Bounding), and the thickness thereof is preferably between 1 μm and 2 μm; d. The second protective layer 306, the metal layer material used is gold, and its function is an anti-oxidation layer, and the thickness thereof is preferably 0.2 μm or less.

如第五圖所示,係為本創作一種陶瓷雷射金屬化以及金屬層結構之斷面示意圖。該雷射雕刻係對該基材100形成斷面形狀之該凹槽202。其中,該斷面形狀係可為長方形、梯形以及三角形之其中一者。As shown in the fifth figure, a schematic cross-sectional view of a ceramic laser metallization and a metal layer structure is created. The laser engraving forms the groove 202 of the cross-sectional shape of the substrate 100. The cross-sectional shape may be one of a rectangle, a trapezoid, and a triangle.

以上,本創作係利用陶瓷基材結合雷射直接成型(Laser Direct Structuring,LDS)之製程,以增加作業過程中之流暢性,基材之散熱性,並提升電路之導通性。Above, this creation uses a ceramic substrate combined with Laser Direct Structuring (LDS) process to increase the smoothness of the operation process, the heat dissipation of the substrate, and improve the continuity of the circuit.

以上已將本創作做一詳細說明,惟以上所述者,僅為本創作之較佳實施例而已,熟習本創作領域者將顯而易見,該等實施例僅係用於描繪本創作,不應解讀為限制本創作之範圍。即凡依本創作申請範圍所作之均等變化與修飾等,皆應仍屬本創作之專利涵蓋範圍內。The present invention has been described in detail above, but the above is only the preferred embodiment of the present invention, and those skilled in the art will be apparent to those skilled in the art. These embodiments are only used to depict the present and should not be interpreted. To limit the scope of this creation. That is, the equivalent changes and modifications made in accordance with the scope of this creation application shall remain within the scope of the patent of this creation.

100‧‧‧基材100‧‧‧Substrate

200‧‧‧立體電路層200‧‧‧Three-dimensional circuit layer

202‧‧‧凹槽202‧‧‧ Groove

300‧‧‧金屬層300‧‧‧metal layer

302‧‧‧導通層302‧‧‧ conduction layer

304‧‧‧第一保護層304‧‧‧First protective layer

Claims (6)

一種陶瓷雷射金屬化以及金屬層結構係包含:一基材;一立體電路層,係於該基材上利用雷射雕刻,並依所設計之電路軌跡雕刻複數之凹槽;以及複數金屬層,係藉由電鍍法或化學沉積法,將等該凹槽鍍上金屬以形成導電性之導電回路。A ceramic laser metallization and metal layer structure comprises: a substrate; a three-dimensional circuit layer, which is laser-engraved on the substrate, and engraves a plurality of grooves according to the designed circuit trace; and a plurality of metal layers The recess is plated with a metal to form a conductive conductive loop by electroplating or chemical deposition. 如申請專利範圍第1項所述之一種陶瓷雷射金屬化以及金屬層結構,其中該基材係可為立體結構以及平板結構之其中之一者。A ceramic laser metallization and metal layer structure as described in claim 1, wherein the substrate is one of a three-dimensional structure and a flat structure. 如申請專利範圍第1項所述之一種陶瓷雷射金屬化以及金屬層結構,其中該基材的材料係包含有氧化鋁(Al2 O3 )、氮化鋁(AlN)、氧化鈹(BeO)、氧化鉻(Cr2 O3 )、氧化鋯(ZrO2 )以及氮化矽(Si3 N4 )之陶瓷材料。A ceramic laser metallization and metal layer structure according to claim 1, wherein the material of the substrate comprises aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), and cerium oxide (BeO). ), a ceramic material of chromium oxide (Cr 2 O 3 ), zirconium oxide (ZrO 2 ), and tantalum nitride (Si 3 N 4 ). 如申請專利範圍第1項所述之一種陶瓷雷射金屬化以及金屬層結構,其中該雷射雕刻係可為二維雷射雕刻以及三維雷射雕刻之其中之一者。A ceramic laser metallization and metal layer structure as described in claim 1, wherein the laser engraving system is one of two-dimensional laser engraving and three-dimensional laser engraving. 如申請專利範圍第1項所述之一種陶瓷雷射金屬化以及金屬層結構,其中該雷射雕刻係利用波長532nm之綠光雷射、波長355nm之UV雷射以及波長1064nm之IR雷射之其中之一者。A ceramic laser metallization and metal layer structure according to claim 1, wherein the laser engraving utilizes a green laser with a wavelength of 532 nm, a UV laser with a wavelength of 355 nm, and an IR laser with a wavelength of 1064 nm. One of them. 如申請專利範圍第1項所述之一種陶瓷雷射金屬化以及金屬層結構,其中該等金屬層係包含銅、鎳、金、銀、鉑、鈀、錫、鋅、鉻或其組合。A ceramic laser metallization and metal layer structure as described in claim 1, wherein the metal layer comprises copper, nickel, gold, silver, platinum, palladium, tin, zinc, chromium or a combination thereof.
TW102207898U 2013-04-30 2013-04-30 Ceramic laser metallization and metal layer structure TWM462745U (en)

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TWI478641B (en) * 2014-01-20 2015-03-21 Rhema Technology & Trading Company Ltd Ceramic circuit board of laser plate copper and manufacturing method thereof
US10669209B2 (en) 2017-12-07 2020-06-02 Industrial Technology Research Institute Ceramic device and manufacturing method thereof

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CN104896320A (en) * 2014-03-06 2015-09-09 苏州同拓光电科技有限公司 LED (light-emitting diode) lamp
EP3219696A1 (en) * 2016-03-14 2017-09-20 Siemens Aktiengesellschaft Cmc with outer ceramic layer
CN106299823B (en) * 2016-08-22 2019-11-29 广东小天才科技有限公司 Connection method of three-dimensional circuit and metal piece and LDS antenna
CN106658954B (en) * 2016-09-14 2019-10-08 长沙市西欧电子科技有限公司 A kind of ceramic substrate and preparation method thereof with circuit groove
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI478641B (en) * 2014-01-20 2015-03-21 Rhema Technology & Trading Company Ltd Ceramic circuit board of laser plate copper and manufacturing method thereof
US10669209B2 (en) 2017-12-07 2020-06-02 Industrial Technology Research Institute Ceramic device and manufacturing method thereof

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