TW201306681A - Ceramic circuit board and fabrication thereof - Google Patents

Ceramic circuit board and fabrication thereof Download PDF

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TW201306681A
TW201306681A TW100126697A TW100126697A TW201306681A TW 201306681 A TW201306681 A TW 201306681A TW 100126697 A TW100126697 A TW 100126697A TW 100126697 A TW100126697 A TW 100126697A TW 201306681 A TW201306681 A TW 201306681A
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trench
circuit board
alloy
ceramic
metal material
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TW100126697A
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Chuan-Chang Lin
Cheng-Ku Chen
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Wonderfulchip Technology Co Ltd
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Abstract

The invention discloses a ceramic circuit board. The ceramic circuit board according to the invention includes a ceramic substrate and at least one lead. The ceramic substrate has an upper surface and at least one groove corresponding to the at least one lead and being formed on the upper surface. The at least one lead is formed by filing the at least one groove with a metal material.

Description

陶瓷電路板及其製造方法Ceramic circuit board and manufacturing method thereof

本發明係關於一種陶瓷電路板(ceramic circuit board)。The present invention relates to a ceramic circuit board.

多數的電子元件,其在運作過程中會產生熱。若未有良好的導熱、散熱機制,這些電子元件會隨著溫度上升降低自身的效率,甚至其使用壽命會縮短。以發光二極體(light emitting diode,LED)為例,目前發光二極體的發光效率已經提升至30 lm/W以上,未來預期可提升至120 lm/W以上。隨著發光效率之提升,也使發光二極體的散熱問題日趨嚴重。當發光二極體隨著電流增加,使晶片接面溫度(junction temperature,Tj)也隨之增高,當Tj過高,發光二極體輸出效率與壽命將會降低。Most electronic components generate heat during operation. Without good thermal and heat dissipation mechanisms, these electronic components will reduce their efficiency with temperature rise, and even their service life will be shortened. Taking a light emitting diode (LED) as an example, the luminous efficiency of the current LED has been increased to more than 30 lm/W, and it is expected to increase to more than 120 lm/W in the future. As the luminous efficiency increases, the heat dissipation problem of the light-emitting diode is also becoming more and more serious. When the light-emitting diode increases with current, the junction temperature (T j ) increases, and when T j is too high, the output efficiency and lifetime of the light-emitting diode will decrease.

現行以玻璃纖維製成的印刷電路板(printed circuit board)之基板(substrate),也就是所謂的FR4印刷電路板,其熱傳導係數約在0.36 W/mK。對發光二極體而言,FR4玻璃基板僅適用於低功率的發光二極體。A substrate of a printed circuit board made of glass fiber, also known as a FR4 printed circuit board, has a heat transfer coefficient of about 0.36 W/mK. For light-emitting diodes, the FR4 glass substrate is only suitable for low-power light-emitting diodes.

對於例如高功率發光二極體等發熱功率高的電子元件,已有以熱傳導係數高的金屬(例如,鋁、銅)做為基板的電路板被採用,也就是所謂的金屬芯印刷電路板(metal-core printed circuit board,MCPCB)。此類電路板因金屬基板本身為一導體,金屬基板與導線層之間必須利用一絕緣體做絕緣,以避免導線層與金屬基板導通。然而,金屬芯印刷電路板多採用高分子材料作為絕緣層材料,高分子材料絕緣層熱傳導率僅0.2~0. 5W/mK並且有耐熱方面的問題。因此,原本熱傳導率極佳的金屬基板,在加入高分子材料絕緣層後,形成熱阻,大幅的降低電路板整體的熱傳導效率,導致金屬芯印刷電路板的熱傳導率僅有1~2.2 W/mK。For electronic components having high heat-generating power such as high-power light-emitting diodes, a circuit board having a metal having a high thermal conductivity (for example, aluminum or copper) as a substrate has been used, that is, a so-called metal core printed circuit board ( Metal-core printed circuit board, MCPCB). Such a circuit board is a conductor due to the metal substrate itself, and an insulator must be used for insulation between the metal substrate and the wire layer to prevent the wire layer from being electrically connected to the metal substrate. However, the metal core printed circuit board mostly uses a polymer material as the insulating layer material, and the thermal conductivity of the polymer material insulating layer is only 0.2 to 0.5 W/mK and has heat resistance problems. Therefore, the original metal substrate with excellent thermal conductivity forms a thermal resistance after the addition of the polymer material insulating layer, which greatly reduces the heat conduction efficiency of the entire circuit board, resulting in a thermal conductivity of the metal core printed circuit board of only 1 to 2.2 W/ mK.

以氮化鋁、氧化鋁等兼具高熱傳導與絕緣性佳之陶瓷材料為基板,其上被覆導線層的電路板被採用。以陶瓷基板做的電路板,目前較常見的種類區分為HTCC(高溫共燒多層陶瓷基板)、LTCC(低溫共燒多層陶瓷基板)、DBC(直接鍵結銅陶瓷基板)、DPC(直接覆銅陶瓷基板)等四種,依不同製程熱傳導係數在2~220 W/mK之間。由於在陶瓷基板上製造/成型導線的方法直接影響了導線的精準度、表面粗糙度、對位精準度...等特性。因此,在高功率、小尺寸電子元件(例如,LED)的精細線路需求下,製程解析度便成了必須要考慮的重要項目之一。LTCC與HTCC均是採用厚膜印刷技術完成線路製作,厚膜印刷本身即受限於網版張力問題。一般而言,其線路表面較為粗糙,且容易造成有對位不精準與累進公差過大等現象。此外,LTCC與HTCC採多層陶瓷疊壓燒結製程,還有收縮比例的問題需要考量,這使得其製程解析度較為受限。DBC雖以微影製程製備金屬線路,但因其製程能力限制,銅厚度的下限約在150~300μm之間,這使得其金屬線路的解析度上限亦僅為150~300μm之間(以深寬比1:1為標準)。DPC則是採用的薄膜製程製作,利用了真空鍍膜、黃光微影製程製作線路,使基板上的線路能夠更加精確,表面平整度高,再利用電鍍/電化學鍍沉積方式增加線路的厚度。一般而言,DPC金屬線路的解析度在金屬線路深寬比為1:1的原則下約在10~50μm之間。A ceramic material having high heat conductivity and excellent insulating properties such as aluminum nitride or aluminum oxide is used as a substrate, and a circuit board on which a wiring layer is coated is used. Circuit boards made of ceramic substrates are currently classified into HTCC (High Temperature Co-fired Multilayer Ceramic Substrate), LTCC (Low Temperature Co-fired Multilayer Ceramic Substrate), DBC (Direct Bonded Copper Ceramic Substrate), and DPC (Direct Copper Clad). Four kinds of ceramic substrates, etc., according to different process heat transfer coefficient between 2~220 W/mK. The method of manufacturing/forming a wire on a ceramic substrate directly affects the accuracy of the wire, the surface roughness, the alignment accuracy, and the like. Therefore, in the fine line requirements of high-power, small-sized electronic components (for example, LEDs), process resolution has become one of the important items that must be considered. Both LTCC and HTCC use thick film printing technology to complete the line production. Thick film printing itself is limited by the tension of the screen. In general, the surface of the line is rough, and it is easy to cause inaccurate alignment and excessive tolerance. In addition, LTCC and HTCC adopt multi-layer ceramic laminate sintering process, and the shrinkage ratio problem needs to be considered, which makes the process resolution more limited. Although DBC prepares metal lines by lithography process, the lower limit of copper thickness is about 150~300μm due to its process capability limitation, which makes the upper limit of resolution of metal lines only between 150~300μm (in aspect ratio). 1:1 is the standard). DPC is made by the thin film process. It uses vacuum coating and yellow lithography process to make the circuit on the substrate more precise and the surface flatness is high. Then the plating/electroless plating method is used to increase the thickness of the circuit. In general, the resolution of a DPC metal line is between 10 and 50 μm under the principle that the metal line aspect ratio is 1:1.

以陶瓷材料做為散熱基板的電路板已是趨勢。然而,對陶瓷電路板先前技術的瞭解,即可看出當下仍需要有一種新的陶瓷電路板架構,以滿足電路板之導線的解析度高、製造成本低廉等要求。Circuit boards using ceramic materials as heat-dissipating substrates have been a trend. However, the understanding of the prior art of ceramic circuit boards shows that there is still a need for a new ceramic circuit board architecture to meet the requirements of high resolution and low manufacturing cost of the wires of the circuit board.

因此,本發明之一面向在於提供一種陶瓷電路板。並且特別地,根據本發明之陶瓷電路板,不同於以往的先前技術,其導線解析度高、製造成本低廉。Accordingly, one aspect of the present invention is directed to providing a ceramic circuit board. In particular, the ceramic circuit board according to the present invention has a higher wire resolution and a lower manufacturing cost than the prior art.

根據本發明之一較佳具體實施例的陶瓷電路板,其包含一陶瓷基板以及至少一導線。該陶瓷基板具有一上表面。特別地,該陶瓷基板並且具有對應該至少一導線且形成在該上表面上之至少一溝槽。該至少一導線係由一金屬材料填滿該至少一溝槽所形成。A ceramic circuit board according to a preferred embodiment of the present invention, comprising a ceramic substrate and at least one wire. The ceramic substrate has an upper surface. In particular, the ceramic substrate has at least one trench corresponding to at least one wire and formed on the upper surface. The at least one wire is formed by filling a metal material with the at least one trench.

於一具體實施例中,該陶瓷基板可以由選自由氧化鋁(Al2O3)、氮化鋁(AlN)、碳化矽(SiC)、氧化矽(SiO2)、氧化鈹(BeO)、氮化矽(Si3N4)或其他兼具高熱傳導與絕緣性佳之陶瓷材料所形成。In a specific embodiment, the ceramic substrate may be selected from the group consisting of alumina (Al 2 O 3 ), aluminum nitride (AlN), tantalum carbide (SiC), yttrium oxide (SiO 2 ), yttrium oxide (BeO), nitrogen. It is formed by bismuth (Si 3 N 4 ) or other ceramic materials with high thermal conductivity and good insulation properties.

於一具體實施例中,該金屬材料可以是銅、銅合金、鋁、鋁合金、鋅、鋅合金、錫、錫合金、鉛、鉛合金、鎳、鎳合金、鐵、鐵合金、銀、金或其他商用導電性佳的金屬材料。In a specific embodiment, the metal material may be copper, copper alloy, aluminum, aluminum alloy, zinc, zinc alloy, tin, tin alloy, lead, lead alloy, nickel, nickel alloy, iron, iron alloy, silver, gold or Other commercially available metal materials with good electrical conductivity.

於一具體實施例中,該至少一溝槽中之一個溝槽的寬度為約50μm~500μm。In one embodiment, one of the at least one trench has a width of about 50 μm to 500 μm.

根據本發明之一較佳具體實施例之製造一陶瓷電路板的方法,首先係製備一陶瓷基板,其中該陶瓷基板具有一上表面以及形成於該上表面上之至少一溝槽。最後,根據本發明之方法係以一金屬材料,填滿該至少一溝槽以形成至少一導線。In a method of fabricating a ceramic circuit board in accordance with a preferred embodiment of the present invention, a ceramic substrate is first prepared, wherein the ceramic substrate has an upper surface and at least one trench formed on the upper surface. Finally, the method according to the invention fills the at least one trench with a metallic material to form at least one wire.

於一具體實施例中,將金屬材料填滿該至少一溝槽以形成該至少一導線的實施,係先將該金屬材料形成之一金屬箔沖壓至該至少一溝槽內,再移除該多餘的金屬箔。In one embodiment, the filling of the at least one trench to form the at least one wire is performed by first stamping a metal foil into the at least one trench, and then removing the metal material. Excess metal foil.

於另一具體實施例中,將金屬材料填滿該至少一溝槽以形成該至少一導線的實施,係先將該金屬材料形成之粉末壓填至該至少一溝槽內,再將填至該至少一溝槽內之該金屬材料之粉末融熔後凝固。In another embodiment, the filling of the at least one trench to form the at least one wire is performed by first filling the powder formed of the metal material into the at least one trench, and then filling the The powder of the metal material in the at least one groove is melted and solidified.

於另一具體實施例中,將金屬材料填滿該至少一溝槽以形成該至少一導線的實施,係先將該金屬材料之熔湯注入該至少一溝槽內,再將注入該至少一溝槽內之該金屬材料之熔湯凝固。In another embodiment, filling the at least one trench with the metal material to form the at least one wire is first injecting the molten material of the metal material into the at least one trench, and then injecting the at least one The melt of the metallic material in the trench solidifies.

與陶瓷電路板的先前技術相較,根據本發明之陶瓷電路板具有導線的精度高、製造成本低廉等優點。Compared with the prior art of ceramic circuit boards, the ceramic circuit board according to the present invention has the advantages of high precision of the wires and low manufacturing cost.

關於本發明之優點與精神可以藉由以下的實施方式及所附圖式得到進一步的瞭解。The advantages and spirit of the present invention will be further understood from the following embodiments and the accompanying drawings.

本發明係提供一種陶瓷電路板及其製造方法。並且特別地,根據本發明之陶瓷電路板,不同於以往的先前技術,其導線的解析度高、製造成本低廉。以下藉由對本發明之數個較佳具體實施例的詳細說明,藉以充分解說關於本發明的特徵、精神、優點以及實施上的可行性。The present invention provides a ceramic circuit board and a method of manufacturing the same. In particular, the ceramic circuit board according to the present invention is different from the prior art in that the wire has high resolution and low manufacturing cost. The features, spirits, advantages, and implementations of the present invention are fully described in the following detailed description of the preferred embodiments of the invention.

請參閱第1圖及第2圖,第1圖係根據本發明之一較佳具體實施例之陶瓷電路板1之外觀示意圖。第2圖係第1圖中之陶瓷電路板1沿第1圖中的A-A線之剖面視圖。Please refer to FIG. 1 and FIG. 2, which is a schematic view showing the appearance of a ceramic circuit board 1 according to a preferred embodiment of the present invention. Fig. 2 is a cross-sectional view of the ceramic circuit board 1 in Fig. 1 taken along line A-A in Fig. 1.

如第1圖及第2圖所示,根據本發明之一較佳具體實施例的陶瓷電路板1,其包含一陶瓷基板10以及至少一導線12。該陶瓷基板10具有一上表面102。特別地,該陶瓷基板10並且具有對應該至少一導線12且形成在該上表面102上之至少一溝槽104。該至少一導線12係由一金屬材料填滿該至少一溝槽104形成。As shown in FIGS. 1 and 2, a ceramic circuit board 1 according to a preferred embodiment of the present invention includes a ceramic substrate 10 and at least one wire 12. The ceramic substrate 10 has an upper surface 102. In particular, the ceramic substrate 10 has at least one trench 104 corresponding to at least one of the wires 12 and formed on the upper surface 102. The at least one wire 12 is formed by filling a metal material with the at least one trench 104.

須強調的是,該至少一導線12的解析度是藉由預先形成的溝槽104來達成,而非藉由解析度差的厚膜技術,或藉由製造成本高的薄膜技術來達成。也就是說,該至少一導線12的寬度及深度即等於該至少一溝槽的寬度及深度。It should be emphasized that the resolution of the at least one wire 12 is achieved by a pre-formed trench 104, rather than by a thick film technique with poor resolution or by a thin film technology that is costly to manufacture. That is, the width and depth of the at least one wire 12 are equal to the width and depth of the at least one groove.

於一具體實施例中,該陶瓷基板10可以由氧化鋁(Al2O3)、氮化鋁(AlN)、碳化矽(SiC)、氧化矽(SiO2)、氧化鈹(BeO)、氮化矽(Si3N4)或其他兼具高熱傳導與絕緣性佳之陶瓷材料所形成。In one embodiment, the ceramic substrate 10 may be made of aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), tantalum carbide (SiC), yttrium oxide (SiO 2 ), beryllium oxide (BeO), and nitrided.矽 (Si 3 N 4 ) or other ceramic materials with high thermal conductivity and good insulation properties.

於一具體實施例中,該金屬材料可以是銅、銅合金、鋁、鋁合金、鋅、鋅合金、錫、錫合金、鉛、鉛合金、鎳、鎳合金、鐵、鐵合金、銀、金或其他商用導電性佳的金屬材料。In a specific embodiment, the metal material may be copper, copper alloy, aluminum, aluminum alloy, zinc, zinc alloy, tin, tin alloy, lead, lead alloy, nickel, nickel alloy, iron, iron alloy, silver, gold or Other commercially available metal materials with good electrical conductivity.

於一具體實施例中,如第2圖所示,該至少一溝槽104中主要的長條形溝槽的寬度w為約50μm~500μm。此即後續形成In one embodiment, as shown in FIG. 2, the width w of the main elongated trench in the at least one trench 104 is about 50 μm to 500 μm. This is the subsequent formation

於一具體實施例中,如第2圖所示,該至少一溝槽104之深度d為約25μm~300μm。In one embodiment, as shown in FIG. 2, the depth d of the at least one trench 104 is about 25 μm to 300 μm.

請參閱第3A圖、第3B圖以及第2圖,該等圖式係以截面視圖示意地繪示根據本發明之一較佳具體實施例之製造如第2圖所示之陶瓷電路板1的方法。Referring to FIG. 3A, FIG. 3B and FIG. 2, the drawings schematically illustrate a ceramic circuit board 1 as shown in FIG. 2 according to a preferred embodiment of the present invention. Methods.

如第3A圖所示,首先,根據本發明之方法係製備一陶瓷基板10。該陶瓷基板10具有一上表面102。特別地,該陶瓷基板10並且具有形成在該上表面102上之至少一溝槽104。該至少一溝槽104可以在該陶瓷基板10之生胚上即形成溝槽,伴隨該陶瓷基板10之生胚燒結,生胚上的溝槽隨著生胚收縮即形成該至少一高溝槽104。該至少一溝槽104也可以在該陶瓷基板10完成後,再行加工成型。As shown in Fig. 3A, first, a ceramic substrate 10 is prepared in accordance with the method of the present invention. The ceramic substrate 10 has an upper surface 102. In particular, the ceramic substrate 10 also has at least one trench 104 formed on the upper surface 102. The at least one trench 104 may form a trench on the green embryo of the ceramic substrate 10, and the green groove of the ceramic substrate 10 is sintered, and the groove on the green embryo forms the at least one high trench as the raw embryo shrinks. 104. The at least one trench 104 may also be processed after the ceramic substrate 10 is completed.

最後,根據本發明之方法係以一金屬材料,填滿該至少一溝槽104以形成至少一導線12,即完成如第2圖所示之陶瓷電路板1。Finally, in accordance with the method of the present invention, the at least one trench 104 is filled with a metal material to form at least one of the wires 12, i.e., the ceramic circuit board 1 as shown in Fig. 2 is completed.

於一具體實施例中,如第3B圖所示,將金屬材料填滿該至少一溝槽104以形成該至少一導線12的實施,係先將該金屬材料形成之一金屬箔14沖壓至該至少一溝槽104內,再移除該多餘的金屬箔14,即完成如第2圖所示之陶瓷電路板1。In a specific embodiment, as shown in FIG. 3B, filling the at least one trench 104 with a metal material to form the at least one wire 12 is performed by first stamping the metal material into the metal foil 14. In the at least one trench 104, the excess metal foil 14 is removed, that is, the ceramic circuit board 1 as shown in FIG. 2 is completed.

於另一具體實施例中,將金屬材料填滿該至少一溝槽104以形成該至少一導線12的實施,係先將該金屬材料形成之粉末壓填至該至少一溝槽104內,再將填至該至少一溝槽104內之該金屬材料之粉末融熔後凝固,即完成如第2圖所示之陶瓷電路板1。In another embodiment, filling the at least one trench 104 with a metal material to form the at least one wire 12 is performed by first filling a powder formed of the metal material into the at least one trench 104. The powder of the metal material filled in the at least one trench 104 is melted and solidified to complete the ceramic circuit board 1 as shown in FIG.

於另一具體實施例中,將金屬材料填滿該至少一溝槽104以形成該至少一導線12的實施,係先將該金屬材料之熔湯注入該至少一溝槽104內,再將注入該至少一溝槽104內之該金屬材料之熔湯凝固,即完成如第2圖所示之陶瓷電路板1。In another embodiment, filling the at least one trench 104 with a metal material to form the at least one wire 12 is performed by injecting a molten material of the metal material into the at least one trench 104 and then implanting the metal material. The melt of the metal material in the at least one trench 104 is solidified, that is, the ceramic circuit board 1 as shown in FIG. 2 is completed.

與陶瓷電路板的先前技術相較,根據本發明之陶瓷電路板具有導線的精度高、製造成本低廉等優點。Compared with the prior art of ceramic circuit boards, the ceramic circuit board according to the present invention has the advantages of high precision of the wires and low manufacturing cost.

藉由以上的詳細說明,可以清楚地了解根據本發明之陶瓷電路板,不同於以往的先前技術,其兼具導線的解析度高、製造成本低廉等優點。From the above detailed description, the ceramic circuit board according to the present invention can be clearly understood, which has the advantages of high resolution of the wire and low manufacturing cost, unlike the prior art.

藉由以上較佳具體實施例之詳述,係希望能更加清楚描述本發明之特徵與精神,而並非以上述所揭露的較佳具體實施例來對本發明之範疇加以限制。相反地,其目的是希望能涵蓋各種改變及具相等性的安排於本發明所欲申請之專利範圍的範疇內。因此,本發明所申請之專利範圍的範疇應該根據上述的說明作最寬廣的解釋,以致使其涵蓋所有可能的改變以及具相等性的安排。The features and spirit of the present invention will be more apparent from the detailed description of the preferred embodiments. On the contrary, the intention is to cover various modifications and equivalents within the scope of the invention as claimed. Therefore, the scope of the patented scope of the invention should be construed as broadly construed in the

1...陶瓷電路板1. . . Ceramic circuit board

10...陶瓷基板10. . . Ceramic substrate

102...陶瓷基板之上表面102. . . Upper surface of ceramic substrate

104...溝槽104. . . Trench

12...導線12. . . wire

14...金屬箔14. . . Metal foil

w...溝槽的寬度w. . . Width of the groove

d...溝槽的深度d. . . Depth of the groove

第1圖係根據本發明之一較佳具體實施例之陶瓷電路板之外觀示意圖。BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a schematic view showing the appearance of a ceramic circuit board in accordance with a preferred embodiment of the present invention.

第2圖係第1圖中之陶瓷電路板沿第1圖中的A-A線之剖面視圖。Fig. 2 is a cross-sectional view of the ceramic circuit board of Fig. 1 taken along line A-A of Fig. 1.

第3A圖及第3B圖係示意地繪示根據本發明之一較佳具體實施例之製造如第2圖所示之陶瓷電路板的方法。3A and 3B are diagrams schematically showing a method of manufacturing a ceramic circuit board as shown in Fig. 2 in accordance with a preferred embodiment of the present invention.

1...陶瓷電路板1. . . Ceramic circuit board

10...陶瓷基板10. . . Ceramic substrate

102...陶瓷基板之上表面102. . . Upper surface of ceramic substrate

104...溝槽104. . . Trench

12...導線12. . . wire

w...溝槽的寬度w. . . Width of the groove

d...溝槽的深度d. . . Depth of the groove

Claims (10)

一種陶瓷電路板,包含:一陶瓷基板,具有一上表面;以及至少一導線,該陶瓷基板並且具有對應該至少一導線且形成在該上表面上之至少一溝槽,該至少一導線係由一金屬材料填滿該至少一溝槽所形成。A ceramic circuit board comprising: a ceramic substrate having an upper surface; and at least one wire having at least one wire corresponding to the at least one wire and formed on the upper surface, the at least one wire being A metal material fills the at least one trench to form. 如請求項1所述之陶瓷電路板,其中該陶瓷基板係由選自由氧化鋁(Al2O3)、氮化鋁(AlN)、碳化矽(SiC)、氧化矽(SiO2)、氧化鈹(BeO)以及氮化矽(Si3N4)所組成之群組中之其一所形成。The ceramic circuit board according to claim 1, wherein the ceramic substrate is selected from the group consisting of alumina (Al 2 O 3 ), aluminum nitride (AlN), tantalum carbide (SiC), yttrium oxide (SiO 2 ), and cerium oxide. One of the group consisting of (BeO) and tantalum nitride (Si 3 N 4 ) is formed. 如請求項2所述之電路板,其中該金屬材料係選自銅、銅合金、鋁、鋁合金、鋅、鋅合金、錫、錫合金、鉛、鉛合金、鎳、鎳合金、鐵、鐵合金、銀以及金所組成之群組中之其一。The circuit board according to claim 2, wherein the metal material is selected from the group consisting of copper, copper alloy, aluminum, aluminum alloy, zinc, zinc alloy, tin, tin alloy, lead, lead alloy, nickel, nickel alloy, iron, iron alloy. One of the groups of silver, gold, and gold. 如請求項2所述之電路板,其中該至少一溝槽中之一個溝槽的寬度為約50μm~500μm。The circuit board of claim 2, wherein one of the at least one trench has a width of about 50 μm to 500 μm. 一種製造一陶瓷電路板之方法,包含下列步驟:(a)製備一陶瓷基板,其中該陶瓷基板具有一上表面以及形成於該上表面上之至少一溝槽;以及(b)以一金屬材料,填滿該至少一溝槽以形成至少一導線。A method of manufacturing a ceramic circuit board comprising the steps of: (a) preparing a ceramic substrate, wherein the ceramic substrate has an upper surface and at least one trench formed on the upper surface; and (b) a metal material Filling the at least one trench to form at least one wire. 如請求項5所述之方法,其中該陶瓷基板係由選自由氧化鋁(Al2O3)、氮化鋁(AlN)、碳化矽(SiC)、氧化矽(SiO2)、氧化鈹(BeO)以及氮化矽(Si3N4)所組成之群組中之其一所形成,該金屬材料係選自銅、銅合金、鋁、鋁合金、鋅、鋅合金、錫、錫合金、鉛、鉛合金、鎳、鎳合金、鐵、鐵合金、銀以及金所組成之群組中之其一。The method of claim 5, wherein the ceramic substrate is selected from the group consisting of alumina (Al 2 O 3 ), aluminum nitride (AlN), tantalum carbide (SiC), yttrium oxide (SiO 2 ), yttrium oxide (BeO). And one of a group consisting of tantalum nitride (Si 3 N 4 ) selected from the group consisting of copper, copper alloy, aluminum, aluminum alloy, zinc, zinc alloy, tin, tin alloy, lead One of a group of lead alloys, nickel, nickel alloys, iron, iron alloys, silver, and gold. 如請求項6所述之方法,其中該至少一溝槽中之一個溝槽的寬度為約50μm~500μm。The method of claim 6, wherein one of the at least one trench has a width of about 50 μm to 500 μm. 如請求項7所述之方法,其中步驟(b)係由下列步驟執行:將該金屬材料形成之一金屬箔沖壓至該至少一溝槽內;以及移除該多餘的金屬箔。The method of claim 7, wherein the step (b) is performed by: stamping the metal material into a metal foil into the at least one trench; and removing the excess metal foil. 如請求項7所述之方法,其中步驟(b)係由下列步驟執行:將該金屬材料形成之粉末壓填至該至少一溝槽內;以及將填至該至少一溝槽內之該金屬材料之粉末融熔後凝固。The method of claim 7, wherein the step (b) is performed by: injecting a powder formed of the metal material into the at least one trench; and filling the metal into the at least one trench The powder of the material is solidified after melting. 如請求項7所述之方法,其中步驟(b)係由下列步驟執行:將該金屬材料之熔湯注入該至少一溝槽內;以及將注入該至少一溝槽內之該金屬材料之熔湯凝固。The method of claim 7, wherein the step (b) is performed by: injecting a molten material of the metal material into the at least one trench; and melting the metal material injected into the at least one trench The soup is solidified.
TW100126697A 2011-07-28 2011-07-28 Ceramic circuit board and fabrication thereof TW201306681A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10383236B2 (en) 2016-04-13 2019-08-13 Shunsin Technology (Zhong Shan) Limited Manufacturing method for circuit board based on copper ceramic substrate
CN110416180A (en) * 2018-04-26 2019-11-05 珠海格力电器股份有限公司 Power module, and manufacturing method and device of power module
CN112713094A (en) * 2020-12-30 2021-04-27 无锡格能微电子有限公司 Common anode TO packaging process method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10383236B2 (en) 2016-04-13 2019-08-13 Shunsin Technology (Zhong Shan) Limited Manufacturing method for circuit board based on copper ceramic substrate
CN110416180A (en) * 2018-04-26 2019-11-05 珠海格力电器股份有限公司 Power module, and manufacturing method and device of power module
CN112713094A (en) * 2020-12-30 2021-04-27 无锡格能微电子有限公司 Common anode TO packaging process method

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