TW201907772A - 使用中介層及導電糊的多層電路板 - Google Patents
使用中介層及導電糊的多層電路板 Download PDFInfo
- Publication number
- TW201907772A TW201907772A TW107122327A TW107122327A TW201907772A TW 201907772 A TW201907772 A TW 201907772A TW 107122327 A TW107122327 A TW 107122327A TW 107122327 A TW107122327 A TW 107122327A TW 201907772 A TW201907772 A TW 201907772A
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- catalytic
- interposer
- circuit board
- sub
- Prior art date
Links
- 238000003475 lamination Methods 0.000 claims abstract description 17
- 239000002131 composite material Substances 0.000 claims abstract description 8
- 230000003197 catalytic effect Effects 0.000 claims description 140
- 239000002245 particle Substances 0.000 claims description 106
- 238000000034 method Methods 0.000 claims description 56
- 239000011347 resin Substances 0.000 claims description 50
- 229920005989 resin Polymers 0.000 claims description 49
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 45
- 239000010949 copper Substances 0.000 claims description 45
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 40
- 229910052802 copper Inorganic materials 0.000 claims description 40
- 238000007772 electroless plating Methods 0.000 claims description 30
- 239000000203 mixture Substances 0.000 claims description 26
- 239000000853 adhesive Substances 0.000 claims description 16
- 230000001070 adhesive effect Effects 0.000 claims description 16
- 239000003054 catalyst Substances 0.000 claims description 16
- 229910052763 palladium Inorganic materials 0.000 claims description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 15
- 239000003822 epoxy resin Substances 0.000 claims description 15
- 229920000647 polyepoxide Polymers 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 14
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 14
- 229920001721 polyimide Polymers 0.000 claims description 12
- 238000009713 electroplating Methods 0.000 claims description 11
- -1 class B prepreg Substances 0.000 claims description 10
- 239000010931 gold Substances 0.000 claims description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 10
- 239000004642 Polyimide Substances 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 8
- 239000000945 filler Substances 0.000 claims description 8
- 229910052718 tin Inorganic materials 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229920006362 Teflon® Polymers 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 239000004033 plastic Substances 0.000 claims description 6
- 229920003023 plastic Polymers 0.000 claims description 6
- 239000010948 rhodium Substances 0.000 claims description 6
- 239000005995 Aluminium silicate Substances 0.000 claims description 5
- 235000012211 aluminium silicate Nutrition 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 5
- 239000011889 copper foil Substances 0.000 claims description 5
- 239000004643 cyanate ester Substances 0.000 claims description 4
- 150000001913 cyanates Chemical class 0.000 claims description 4
- 239000004593 Epoxy Substances 0.000 claims description 3
- 239000002734 clay mineral Substances 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 3
- 150000003839 salts Chemical class 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- YKTSYUJCYHOUJP-UHFFFAOYSA-N [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] Chemical compound [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] YKTSYUJCYHOUJP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052797 bismuth Inorganic materials 0.000 claims description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 239000000155 melt Substances 0.000 claims description 2
- 239000004843 novolac epoxy resin Substances 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims description 2
- 229920001568 phenolic resin Polymers 0.000 claims 2
- 229910052573 porcelain Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 110
- 239000000463 material Substances 0.000 description 33
- 239000003365 glass fiber Substances 0.000 description 15
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- 239000000835 fiber Substances 0.000 description 11
- 239000004744 fabric Substances 0.000 description 10
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000011162 core material Substances 0.000 description 8
- 239000007788 liquid Substances 0.000 description 8
- 238000009472 formulation Methods 0.000 description 7
- 238000007747 plating Methods 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 238000000227 grinding Methods 0.000 description 6
- 238000001816 cooling Methods 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 5
- 239000010954 inorganic particle Substances 0.000 description 5
- 239000002344 surface layer Substances 0.000 description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- 239000003638 chemical reducing agent Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 239000002923 metal particle Substances 0.000 description 4
- LJCNRYVRMXRIQR-OLXYHTOASA-L potassium sodium L-tartrate Chemical compound [Na+].[K+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O LJCNRYVRMXRIQR-OLXYHTOASA-L 0.000 description 4
- 235000011006 sodium potassium tartrate Nutrition 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 239000004809 Teflon Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000009499 grossing Methods 0.000 description 3
- 239000011256 inorganic filler Substances 0.000 description 3
- 229910003475 inorganic filler Inorganic materials 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000009719 polyimide resin Substances 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000007596 consolidation process Methods 0.000 description 2
- 229910000365 copper sulfate Inorganic materials 0.000 description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 2
- 238000001723 curing Methods 0.000 description 2
- 238000005202 decontamination Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000005553 drilling Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 229910052622 kaolinite Inorganic materials 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 150000002940 palladium Chemical class 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 229940095064 tartrate Drugs 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 2
- NWZSZGALRFJKBT-KNIFDHDWSA-N (2s)-2,6-diaminohexanoic acid;(2s)-2-hydroxybutanedioic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O.NCCCC[C@H](N)C(O)=O NWZSZGALRFJKBT-KNIFDHDWSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 101150003085 Pdcl gene Proteins 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 235000021355 Stearic acid Nutrition 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate Chemical compound [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001649 dickite Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000001879 gelation Methods 0.000 description 1
- 229910052621 halloysite Inorganic materials 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- IKDUDTNKRLTJSI-UHFFFAOYSA-N hydrazine monohydrate Substances O.NN IKDUDTNKRLTJSI-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- 239000012766 organic filler Substances 0.000 description 1
- 239000011146 organic particle Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052615 phyllosilicate Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- GGCZERPQGJTIQP-UHFFFAOYSA-N sodium;9,10-dioxoanthracene-2-sulfonic acid Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000600 sorbitol Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000003039 volatile agent Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 239000002759 woven fabric Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/115—Via connections; Lands around holes or via connections
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
- H05K1/095—Dispersed materials, e.g. conductive pastes or inks for polymer thick films, i.e. having a permanent organic polymeric binder
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/111—Pads for surface mounting, e.g. lay-out
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/425—Plated through-holes or plated via connections characterised by the sequence of steps for plating the through-holes or via connections in relation to the conductive pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
- H05K3/4614—Manufacturing multilayer circuits by laminating two or more circuit boards the electrical connections between the circuit boards being made during lamination
- H05K3/462—Manufacturing multilayer circuits by laminating two or more circuit boards the electrical connections between the circuit boards being made during lamination characterized by laminating only or mainly similar double-sided circuit boards
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
- H05K3/4623—Manufacturing multilayer circuits by laminating two or more circuit boards the circuit boards having internal via connections between two or more circuit layers before lamination, e.g. double-sided circuit boards
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
- H05K2201/0203—Fillers and particles
- H05K2201/0206—Materials
- H05K2201/0236—Plating catalyst as filler in insulating material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/095—Conductive through-holes or vias
- H05K2201/09572—Solder filled plated through-hole in the final product
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10227—Other objects, e.g. metallic pieces
- H05K2201/10378—Interposers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/06—Lamination
- H05K2203/068—Features of the lamination press or of the lamination process, e.g. using special separator sheets
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/08—Treatments involving gases
- H05K2203/085—Using vacuum or low pressure
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
- H05K3/4053—Through-connections; Vertical interconnect access [VIA] connections by thick-film techniques
- H05K3/4069—Through-connections; Vertical interconnect access [VIA] connections by thick-film techniques for via connections in organic insulating substrates
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
- H05K3/4626—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Chemically Coating (AREA)
Abstract
一種多層電路板,其藉由將一頂部子層安置於一或多對複合層而形成,該頂部子層在至少一個側邊上具有跡線,每一複合層包含一中介層及一子層。鄰接一中介層之每一子層具有一互連孔口,該互連孔口安置為鄰接於具有每一對應子層上之一電鍍穿孔或墊之互連件。每一中介層孔口填充有導電糊,且將頂部子層及一或多對複合層之堆疊置放於積層壓製機中,殼體經抽空,且施加高溫及積層壓力直至該導電糊已熔融,連接該等鄰接互連件,且該等板積層在一起成為完成的積層多層電路板。
Description
本發明係關於一種多層電路板及一種相關製造方法。特定言之,本發明係關於一種具有與中介層互連之多個跡線層之電路板,該中介層在製造方法之單一積層步驟期間形成互連件。
先前技術印刷電路板(printed circuit board;PCB)係使用形成於介電基板上之導電金屬互連件(稱為「跡線」)形成,其中攜載導體的每一表面稱為「層」。每一介電基板具有形成於一個表面上或兩個表面上之跡線以形成「子層」,其為多層板之固有的次組合件中之一者,且藉由將若干此類介電核心(其具有形成於其中之跡線)與裸介電層穿插堆疊且在溫度及壓力下將其積層在一起,可形成多層印刷電路。介電基板可包含嵌入於纖維基質中的環氧樹脂,該纖維基質諸如編織至織物中之玻璃纖維。在一個先前技術製造方法中,將銅積層至介電層之外表面上,諸如用光阻或光敏性膜圖案化銅表面以產生遮罩及未遮罩區域,且接著蝕刻銅表面以於核心介電質之一個或兩個側邊上形成導電跡線層。隨後可將具有導電跡線之介電質核心之堆疊積層在一起以形成多層PCB,且任何所需層至層互連件經製得具有通孔,該等通孔為用銅電鍍之鑽孔以形成提供自一個跡線層至另一跡線層之連接性的環圈。
先前技術電路板製造之一個困難為每一新層之添加為單獨連續 積層步驟。對於四層板(兩個核心雙側跡線層加上安置於中間中之預浸體介電層),存在單一積層步驟,且6層板典型地在其積層步驟後自前述4層板開始形成,繼之以依序地將每一額外兩層核心積層至預先積層層。每一積層步驟需要幾個小時,拉取真空,提供積層壓力,及加熱及冷卻循環。大體而言,積層步驟的數目等於子層之數目減去一,或對於兩層子層及n層板(n>2),積層步驟之數目為-1。在完成全部積層步驟後,穿孔經隨後在通孔位置處鑽孔貫穿完成的積層,且貫通孔及需電鍍之任何其他穿孔經去污及無電電鍍貫穿以提供自一個層至另一層之電連接性。對於高速信號,傳輸成品pcb之完整厚度的電鍍穿孔可產生傳輸線反射且阻抗在穿孔結構處間斷。
製造多層板之另一問題為每一層之表面上之跡線可傾向於在施加積層熱及機械壓力期間側向地轉移,此係因為該等跡線典型地安置於PCB之表面之上方,且其典型地在自PCB之表面蝕刻掉原始銅箔後暴露。
需要提供替代積層方法,該方法提供單一積層步驟防止積層期間之該等跡線的橫向移動,且亦提供層之間的電連接性使得除去先前技術之鑽孔貫穿積層物之步驟。
本發明之第一目標為一種多層電路板,該多層電路板由以下形成:將包含具有電路跡線之C級預浸體的層頂部電路跡線「子層」置放於一或多個表面上之單一積層步驟,及視情況選用之用於連接至對側上之鄰接層的互連通孔或墊。一或多個複合子層緊靠頂部子層堆疊,每一複合層包含中介層及子層,該中介層在鄰接於中介層之每一表面的子層之間提供互連,且該複合層之最終子層為多層堆疊之底部子層。每一中介層具有填充有導電糊的至少一個孔口,該孔口經安置以提供自鄰接子層之通孔至安置於子層之間的中介層之通 孔的電連接。每一中介層具有填充有導電糊之至少一個孔口,該孔口經安置以提供自中介層之一側上之鄰接子層之通孔或墊至該中介層之對置表面上之子層之通孔或墊之電互連,電互連藉由以下形成:在不僅足以將子積層在一起且亦足以熔融導電糊及電橋接中介層之任一側上之鄰接子層之通孔或墊的溫度下積層多層電路板,由此在單一積層步驟期間提供電連接性及積層。
本發明之第二目標為一種用於製造多層電路板之方法,該多層電路板由複數個子層(該等子層在子層之一個或兩個側邊上具有跡線)及由子層上之通孔或墊限定之一或多個互連件(典型地亦連接至子層上之跡線)形成,通孔具有導電內表面,子層與中介層交插提供對應子層互連通孔或墊之間的連接性。中介層由適用於積層至子層之材料形成,每一中介層具有填充有導電糊之一或多個孔口,中介層之孔口及導電糊經安置以提供自中介層之一側上之子層通孔至中介層之對置表面上之子層通孔的連接性。為了電連接性,子層及中介層經交插、對準,且安置於封閉積層壓製機中,從而該積層壓製機在真空、高溫且施加壓力貫穿積層物之厚度下使得子層及中介層積層成單一結構,且亦促使互連件電接合至導電糊,及將導電糊固結成橋接墊及通孔之導體。
本發明之第三目標為子層及中介層之積層物,使用催化性預浸體形成之至少一個子層,該催化性預浸體具有存在於催化性粒子排出深度下方之催化性粒子,提供該等催化性粒子以供用於無電電鍍在因此形成之溝道中之導電跡線。
在本發明之第一具體實例中,具有至少一個跡線層之子層由具有一側或兩側上之導電跡線之介電質形成,子層跡線層具有孔口及由孔口限定之具有導電內表面的至少一個互連通孔。中介層由具有用於互連之孔口的介電 質形成,該等孔口對應於子層互連通孔或墊之位置,中介層孔口填充有導電糊。子層及中介層之交替層堆疊至積層壓製機殼體內,該殼體經抽空至較低氣壓,且提供足以熔融導電糊之高溫同時在升高的外部施加機械積層壓力及腔室溫度下將層積層在一起。導電糊熔融以提供插入層孔口之任一側上之鄰接子層之通孔之間的電互連,且在單一積層且電互連步驟中積層壓製機使得層機械地接合在一起成為單塊多層電路板。
在本發明之第二具體實例中,單一或兩層子層由具有富樹脂表面之催化性預浸體形成,該富樹脂表面將催化性粒子自表面排出使得催化性粒子分佈於富樹脂表面下方。催化性粒子並不存在於每一催化性積層物之表面處以在排出深度下方,使得積層物之表面區域具有不足密度之催化性粒子以在除形成溝道之外的任何區域中引起無電電鍍,形成溝道之區域比排出深度更深,其中催化性粒子可用於無電電鍍。在第一步驟中,藉由形成溝道或者使用任何移除方式移除材料表面來暴露催化性粒子,該等移除方式包括雷射切除、電漿蝕刻、化學蝕刻、機械磨蝕或切割或使用或不使用圖案遮罩之此等技術中之任一者。在第二步驟中,子層由將催化性積層物置放於無電電鍍浴中而形成,其中無電電鍍之活性金屬,諸如例示Cu經吸引至已移除富樹脂表面之圖案化溝道區中之暴露的催化性粒子(諸如Pt)。第二步驟繼續直至無電電鍍用電鍍金屬填充圖案化溝道之側邊及底部以包圍催化性積層物之天然表面層級。在視情況存在之第三步驟中,圖案化的溝槽之表面諸如藉由拋光、研磨、機械加工或蝕刻平面化以使無電電鍍之層級與催化性積層物之周圍天然表面匹配超過溝道之程度。以此方式,可形成催化性子層,其在一側或兩側上具有跡線,且該等跡線有利地與並不存在跡線之催化性積層物之表面實質上共面。
在本發明之第三具體實例中,中介層由介電質層形成,該介電質諸如聚醯亞胺、B層級預浸體、可撓性或非撓性介電質之環氧樹脂或環氧樹 脂摻合物、氰酸酯、聚四氟乙烯(PTFE,以商標Teflon®為人所知)或PTFE摻合物預浸體或黏著劑、諸如黏著劑、聚醯亞胺、黏著劑之依序層之接合疊層或適用於電路板積層之任何材料,該介電層具有施加至兩個表面之離型膜,形成於介電層及離型膜層中之孔口在提供至鄰接子層之互連件之位置中,該等孔口填充有導電糊,糊視情況乾燥,且移除離型層以提供乾燥導電糊之栓塞,中介層接著在置放於積層壓製機中時適用於安置於中介層之任一表面上之子層之積層及互連。
圖1A展示用於形成原始催化性預浸體之方法之示意圖。
圖1B展示用於自原始B級預浸體形成成品C級預浸體之真空積層壓製機。
圖1C展示用於在積層期間形成多層預浸體之真空積層階段。
圖2展示用於圖1之真空積層步驟處理溫度對比時間曲線。
圖3展示用於形成催化性預浸體之方法步驟。
圖4展示關於預浸體材料之截面視圖之分佈於預浸體材料中之催化性粒子曲線。
圖5A展示天然催化性預浸體之截面視圖。
圖5B展示表面移除步驟後之催化性預浸體之截面視圖。
圖5C展示時間順序期間之無電電鍍步驟期間的催化性預浸體之截面視圖。
圖5D展示表面平滑化步驟後之催化性預浸體之截面視圖。
圖6A至圖6I展示用於在非催化性積層物上形成具有頂部及底部跡線之子層的方法步驟。
圖7A至圖7D展示用於在催化性積層物上形成具有之頂部及底部跡線之子層之方法步驟。
圖8A至圖8D展示用於形成中介層之方法步驟。
圖9A至圖9C展示用於在單一積層步驟中形成具有互連層之多層電路板之步驟。
圖10A展示用於形成多層電路板之多子層疊加。
圖10B展示在單一積層步驟中之完成的圖10A之積層物。
圖1A展示用於製造預浸體(黏合於樹脂中之浸染前纖維基質)之實例方法。許多不同材料可用於預浸體纖維,包括編織玻璃纖維織物、碳纖維或其他纖維,且多種不同材料可用於樹脂,包括環氧樹脂、聚醯亞胺樹脂、氰酸酯樹脂、PTFE(Teflon)摻合樹脂或其他樹脂。本發明之一態樣為能夠支持在1密耳(25u)之數量級之精細間距導電跡線之印刷電路板積層物,且雖然實施方式描繪使用催化劑形成銅跡線用於無電式銅形成,但應理解本發明之範疇可延伸至適用於無電電鍍及電-電鍍之其他金屬。對於無電沈積之銅(Cu)溝道,元素鈀(Pd)較佳作為催化劑,儘管選定元素週期表過渡金屬元素,諸如9至11族鉑(Pt)、銠(Rh)、銥(Ir),鎳(Ni)、金(Au)、銀(Ag)、鈷(Co)或銅(Cu),或此等中之其他化合物,包括其他金屬,諸如鐵(Fe)、錳(Mn)、鉻(Cr)、鉬(Mo)、鎢(W)、鈦(Ti)、錫(Sn)或上述之混合物或鹽,但其中任一者可用作催化性粒子。本候選清單意欲為例示性而非全面性的,亦可使用本領域中已知用於吸引銅離子之其他催化劑。在本發明之一個實例中,催化性粒子為均相催化性粒子。在本發明之另一實例中,催化性粒子為無機粒子或耐高溫塑料粒子,該等耐高溫塑料粒子塗佈有幾埃厚度之催化性金屬,由此形成具有囊封非催化性內部粒子之較薄催化性外表面的非均相催化性粒子。此調配物可期望用於較大催化性粒子,諸如最長 尺寸在25u之數量級之彼等粒子。此調配物之非均相催化性粒子可包含諸如二氧化矽(SiO2)之無機、有機或惰性填充劑,諸如高嶺土(Kaolin)之無機黏土,或塗佈於具有諸如藉由氣相沈積或化學沈積而吸附於填充劑之表面上的催化劑(諸如鈀)之表面上的高溫塑料填充劑。催化劑之僅幾個原子層要求催化性粒子具有有助於無電電鍍之期望特性。
在形成非均相催化性粒子之一個實例中,填充劑(有機或無機)之浴液按大小分類包括大小小於25u之粒子,將此等經分類無機粒子混合至罐中之含水浴液中,攪動,且隨後將諸如PdCl之鈀鹽(或諸如其他催化劑之銀鹽之任何其他催化劑)與諸如HCl之酸及諸如水合肼之還原劑一起引入,進而降低塗佈無機粒子之金屬Pd混合物提供塗佈於填充劑上之Pd的幾埃之厚度,從而與使用均相Pd金屬粒子相比,在極大地降低Pd之體積要求的情況下,產生具有均相Pd粒子之催化性特性之非均相催化性粒子。然而,對於在幾nm之數量級之極小催化性粒子,均相催化性粒子(諸如純淨Pd)可為較佳的。
實例無機填充劑包括黏土礦物質,諸如含水頁矽酸鋁(hydrous aluminum phyllosilicate),其可含有可變量之鐵、鎂、鹼金屬、鹼土及其他陽離子。此族之實例無機填充劑包括二氧化矽、矽酸鋁、高嶺石(Al2Si2O5(OH)4)、聚矽酸鹽或屬於高嶺土或瓷土族之其他黏土礦物質。實例有機填充劑包括PTFE(Teflon)及耐高溫之其他聚合物。
鈀鹽之實例為:BrPd、CL2Pd、Pd(CN)2、I2Pd、Pd(NO3)2*2H20、Pd(NO3)2、PdSO4、Pd(NH3)4Br2、Pd(NH3)4Cl2H2O。本發明之催化性粉劑亦可含有非均相催化性粒子(例如塗佈於無機填充劑粒子上之催化性材料)、均相催化性粒子(諸如元素鈀)以及非催化性粒子(選自無機填充劑之族)之混合物。
在催化劑當中,鈀因其相對之經濟性、可用性及機械特性而為 較佳催化劑,但仍可使用其他催化劑。
圖1A展示諸如編織玻璃纖維之編織織物卷102經由如滾輪組饋送,該等滾輪將編織物導引至填充有摻合催化性粒子且與揮發性液體混合以減小黏度之環氧樹脂的槽108中,由此形成A級(液體)預浸體。
樹脂可為聚醯亞胺樹脂、環氧樹脂與氰化物酯之摻合物(其在高溫下提供固化)或在塗佈期間具有可選黏度且在冷卻後具有加熱固化特性之任何其他合適的樹脂調配物。可添加阻燃劑例如以符合可燃性標準或與預浸體之標準FR系列中之一者(諸如FR-4或FR-10)兼容。對於高速電路之額外要求為介電常數ε(電容率)以及損耗正切δ,該介電常數通常為大約4且決定形成於介電質上之傳輸線的特徵阻抗,該損耗正切為在一定距離上之頻率相關能量吸收之量測,由此損耗正切為由可計算量之dB/cm的傳輸線長度而對介電質如何與高頻電場相互作用從而不當地降低信號幅值之量測。將樹脂與已按大小分類之催化性粒子摻合。在調配物之一個實例中,催化性粒子包括以下各者中之至少一者:均相催化性粒子(金屬鈀),或非均相催化性粒子(經塗佈在無機粒子或高溫塑料上之鈀),且對於任一調配物,催化性粒子較佳地具有小於25u之最大尺寸且具有50%計數之大小在12u與25u之間或範圍1-25u或小於25u的粒子。此等為並不意圖限制本發明之範圍的實例催化性粒度具體實例。在一個實例具體實例中,催化性粒子(均相或非均相)在1u-25u之大小範圍中。在本發明之另一實例中,均相催化性粒子藉由將金屬鈀研磨為粒子且使所得粒子穿過帶具有25u矩形開口之篩孔的篩而形成,以使得選擇小於25u的所有催化性粒子,且研磨操作測定粒子在最小尺寸方向上之縱橫比。縱橫比小於2:1為較佳的,但本實例具體實例不限於彼範圍,且催化性粒子可為非均相或均相催化性粒子。在另一實例中,催化性樹脂混合物106藉由將均相或非均相催化性粒子以諸如實質上12重量%催化性粒子比樹脂之重量之比率的一定重量比率摻合至 預浸體樹脂中而形成。按催化性粒子在樹脂混合物中之重量計的比率可替代地介於催化性粒子重量比樹脂之總重量8-16%的範圍內。應理解,亦可使用其他摻合比率,且其可較佳使用較小粒子。在本發明之一個實例中,催化性粒子密度經選擇以提供催化性粒子之間在3u-5u之數量級的平均距離。
在藉由滾輪104將織品浸沒至催化性樹脂浴液106中後,催化性樹脂浸染之織物經導引至滾輪110,其確定未固化液體A級預浸體105之厚度,亦建立樹脂/玻璃+樹脂中之樹脂之百分比比率。接著將A級預浸體105穿過烘烤烘箱103,該烘烤烘箱將A級預浸體中之有機物及其他易失性化合物驅出且極大地減小液體含量,形成由滾輪111輸送之無黏性B級預浸體107。在一實例具體實例中,烘箱103將A級預浸體中之易失性化合物自約80%溶劑比乾燥至B級預浸體之小於約0.1%溶劑比。所得B級預浸體107經提供至材料操作滾輪111且可切割成薄片以便於操作及儲存,且稍後置放於圖1B中之積層壓製機126中,該積層壓製機在真空下將壓力施加於薄片之整個表面上,改變溫度分佈同時預浸體核心處於積層壓製機中,遵循圖2中展示之溫度曲線202。在本發明之一個實例中,為產生將催化性粒子排出至表面以下之排出深度的富樹脂表面,接近外表面安置之預浸體薄片(其稍後將移除表面以暴露下方催化性粒子)經選擇以具有大於65%樹脂,諸如玻璃106(71%樹脂)、玻璃1067、或玻璃1035(65%樹脂),且內部預浸體薄片(其並不經受表面移除)經選擇以具有小於65%樹脂。另外,為減小接近催化性預浸體之表面存在之玻璃纖維的可能性,可使用具有內部預浸體層之編織玻璃纖維且平坦非編織玻璃纖維可用於外部富樹脂預浸體層中。外表面層上之富樹脂預浸體及平坦非編織玻璃纖維之組合在外表面與封裝玻璃纖維之間產生0.7密耳(17u)至0.9密耳(23u)的排出區域。玻璃型式106、1035及1067由於其玻璃纖維厚度比大於65%樹脂用於積層物之中心區域中的具有3.7密耳(94u)纖維的典型預浸體薄片,諸如玻璃風格2116中發現 之玻璃纖維厚度小(1.3-1.4密耳/33-35u)而較佳用於外部富樹脂表面上。此等值作為實例給出,期望可商購之最小玻璃纖維繼續減小直徑。在本發明中溫度對比時間曲線202經調適以使得催化性粒子及玻璃纖維轉移離開積層物之外表面,在膠凝點溫度之液態期間受環氧樹脂之表面張力排斥。曲線202之冷卻循環後,將固化的C級預浸體薄片自積層壓製機移除。形成固化C級預浸體薄片之方法可使用單一或多個纖維織品薄片以改變成品厚度,該厚度可在2密耳(51u)至60密耳(1.5mm)之間變化。
圖3展示製備具有催化性粒子注入但自預浸體之外表面排出的預浸體積層物之方法的流程圖。步驟302為將催化性粒子摻合至樹脂中,通常伴隨添加有機揮發物以降低混合物黏度,其形成放置於貯存器108中之催化性樹脂106。步驟304為可提供將催化性樹脂注入至織品,諸如圖1之滾輪104中以形成A級預浸體,及步驟306為諸如藉由滾輪110注入將催化性樹脂的織品初始滾動至B級預浸體中,步驟307為用於移除有機溶劑以形成B級預浸體之烘烤步驟,及步驟308為以積層壓製機126將注入催化性樹脂的織品130按壓成催化性C級預浸體薄片,該積層壓製機遵循曲線202之溫度週期,伴隨真空泵128在整個積層方法中抽空腔室124以自環氧樹脂移除氣泡且減小可形成於環氧樹脂中之任何空氣空隙。將冷卻的成品催化性C級預浸體薄片切割並儲存以便後續使用。
圖2之溫度對比時間曲線202展示積層壓製機112中之預浸體之溫度分佈,其為用於形成催化性預浸體之關鍵,該催化性預浸體具有將催化性粒子自外部富樹脂表面排出但僅存在於外部富樹脂表面下方之表面特性。樹脂在貯存器108中處於液態,且在樹脂經浸染至玻璃纖維中並穿過滾輪110後,預浸體處於A級。烘烤103之後,預浸體處於B級,其中易失性有機物經烘烤掉伴隨著初始樹脂硬化,其將B級預浸體轉化為在積層週期,諸如圖2之冷卻階段結束 時變為C級預浸體。將B級預浸體置放於積層壓製機中且抽真空以防止滯留空氣形成於積層層之間。在溫度緩升時間204期間施加熱為獲得溫度及壓力判定之預浸體膠凝點205維持在10-15秒之數量級之持續時間(該膠凝點定義為液體及固體狀態彼此近似平衡之狀態),其為將催化性粒子遷移離開表面之方法之關鍵,其後,預浸體之溫度保持在停留溫度下且停留時間206可介於60-90分鐘的範圍內,繼之以冷卻循環208。停留溫度及膠凝點溫度為壓力及樹脂依賴性,在120℃(用於環氧樹脂)至350℃(用於Teflon/聚醯亞胺樹脂)之實例範圍中。將預浸體保持在膠凝點205下過短之持續時間將導致催化性粒子或玻璃纖維不當地存在於成品預浸體之表面處。
圖4展示藉由圖1、圖2及圖3之方法形成的所得催化性預浸體402,其中催化性粒子414均勻地分佈於預浸體402之中心區域內,但並不存在於第一表面404下方之邊界區域408下方,或第二表面406下方的邊界區域410下方。對於粒子之實例粒子分佈小於25u,催化性粒子邊界為典型地10-12u低於表面(在粒度之一半之數量級),因此此深度或大於表面材料必須移除用於待可用於無電電鍍之嵌入的催化性粒子。
先前技術催化性積層物具有活性表面,該等活性表面必須經遮罩以防止催化性積層物之活性表面上之非所需無電電鍍。相比之下,本發明之催化性積層物在自第一表面404至第一邊界408及自第二表面406至第二邊界410之厚度範圍上不包括催化性粒子,提供先前技術中不需要無電電鍍之防止與催化性粒子接觸之單獨遮罩層之益處。因此,自任一第一表面404穿過排出深度至邊界層408之深度或更深移除表面材料,或自第二表面406穿過排出深度至第二邊界410移除表面材料導致可用於無電電鍍之催化性材料暴露。亦需要提供富樹脂表面以亦不僅排出催化劑同樣排出纖維織品之方法,隨著在後續步驟中導致纖維暴露之移除表面層需要額外清洗步驟,因此較佳為僅移除表面樹脂以 便暴露下方催化性粒子。此係藉由使用富樹脂外部預浸體層及具有外部層上之較小直徑纖維之平坦非編織玻璃纖維層之組合而實現。
圖5A至圖5D之序列展示鑑別各種結構(但未按比例)之方法步驟,且僅提供方法步驟之簡化視圖用於理解本發明。圖5A展示藉由圖1、圖2及圖3之方法形成之催化性預浸體508的放大截面圖。催化性粒子502可在25u以及更小之大小範圍中,在本實例中,為了清晰起見其以12u至25u範圍展示。如先前所描述,催化性粒子可包括非均相催化性粒子(具有催化性表面塗層之有機或無機粒子)或均相粒子(催化性金屬粒子)。第一邊界504實質上低於第一表面506 25u。對置表面上之第二表面505及第二表面邊界503經展示以供參考,但可以與圖5A至5E之序列所描述之相同方式形成。亦展示將在第一層506上之跡線與第二層505上之跡線之間提供連接性的鑽孔511。
圖5B展示具有溝道510之圖5A之積層物,該溝道為藉由將需要跡線之區域中的表面層506移除來形成。亦移除包圍在與跡線溝道510相同或不同深度下的通孔之環圈513中的預浸體。可藉由雷射切除移除表面材料,其中催化性預浸體之溫度即刻升高直至催化性預浸體氣化,同時使包圍預浸體結構上不變,使催化性粒子暴露。可較佳地使用具有具備對正在剝蝕之預浸體材料之此光學波長的低反射性及高吸收性之波長的雷射,諸如紫外輻射(ultraviolet;UV)波長。此類UV雷射之實例為UV準分子雷射或釔鋁石榴(yttrium-aluminum-garnet;YAG)雷射,由於其用於形成精確機械深度之溝道且具有輪廊分明之側壁的窄光束尺寸及高可用功率,故其亦為優良選擇。實例雷射可以0.9-1.1密耳(23u至28u)直徑寬度移除材料,其中深度由表面上之雷射功率及移動速度決定。用於形成溝道510及環圈513之另一表面移除技術為電漿蝕刻,其可局部或藉由利用將電漿自表面層506或505排出之圖案化遮罩,諸如乾膜光阻或相較於催化性預浸體之電漿或化學蝕刻率而具有較低電漿或化學 蝕刻率之其他遮罩材料製備表面來完成。典型地基於環氧樹脂/光阻蝕刻選擇性(使得在結束蝕刻時電漿蝕刻至固化環氧樹脂之所需移除深度留下足夠光阻)來選擇光阻厚度,或在用作電鍍遮罩之光阻的情況下,根據所需沈積厚度選擇厚度。典型乾膜厚度在0.8-2.5密耳(20-64u)範圍內。適用於蝕刻富樹脂表面之電漿包括與諸如氮(N)之惰性氣體混合的氧(O)及CF4電漿之混合物,或可添加氬(Ar)作為用於反應氣體之載氣。遮罩圖案亦可使用乾膜遮罩、金屬遮罩或具有孔口之任何其他類型的遮罩形成。在使用機械遮罩之處,可使用以下各者中之任一者施加抗蝕刻劑:光刻、網版印刷、模板印刷、刮板或施加蝕刻光阻之任何方法。用於移除預浸體之表面層的另一方法為機械研磨,諸如線性或旋轉切割工具。在此實例中,預浸體可緊固於真空電鍍夾盤中,且旋轉切割機(或具有可移動真空板之固定切割機)可行進限定跡線(諸如由Gerber格式相片檔案之x、y座標對限定)之圖案。在移除表面材料之另一實例中,可使用水切割工具,其中具有流體中夾帶的研磨粒子的噴水器可撞擊於表面上,由此移除第一邊界504下方之材料。此等方法中之任一者可單獨地或組合使用以移除表面材料且自預浸體508形成溝道510,較佳地具有擴展於第一邊界504下方之溝道。因此,最小溝道深度為所需以暴露下方催化性粒子的深度,其為固化預浸體之特徵。由於催化性材料均勻地分散遍及排出邊界504下方的固化預浸體,因此最大溝道深度受編織纖維(諸如玻璃纖維)織品之深度限制,其傾向於複雜化溝道清潔,因為纖維可能折斷且再沈積於既定用於無電電鍍之溝道中,或以其他方式干擾後續方法步驟。典型的溝道深度為1密耳(25u)至2密耳(70u),低於C級預浸體之排出深度。在移除表面材料以形成溝道510之後的最終步驟為清潔掉經移除之材料的任何粒子,其可使用超音波清潔、與表面活性劑混合之噴水器或並不導致溝道周圍之表面506材料移除的任何其他清潔方式來實現。
圖5C展示隨時間無電電鍍之進度的等高線圖,其中將圖5B之催化性預浸體置放於使用溶解還原劑之無電浴液中以將催化性預浸體上之金屬離子還原為金屬狀態。一個實例無電銅浴液調配物使用羅謝爾鹽(Rochelle salt)作為錯合劑、硫酸銅作為銅金屬源、甲醛作為還原劑以及氫氧化鈉作為反應物之混合物。在此實例中,酒石酸鹽(羅謝爾鹽)浴液較佳便於廢棄物處理;羅謝爾鹽不會像替代物,諸如EDTA或乙二胺那樣強烈螯合。在此實例中,酒石酸鹽(羅謝爾鹽)為完成劑,硫酸銅為金屬源,甲醛為還原劑以及氫氧化鈉為反應物。其他無電電鍍調配物為可能,給出此實例用於參考。無電電鍍最初形成於暴露的催化性粒子之表面上,如時間t1時之陰影圖案520及通孔535中之匹配陰影圖案中所展示。隨無電電鍍進行之銅沈積持續至展示用於後續時間t2 522、t3 524及t4 526之散列之沈積區域,此時沈積526可延伸於表面506上方且通孔535亦填充有銅。
相較於僅自導電底部(最初電鍍)層進行之電鍍,藉由以催化性材料蝕刻之溝道來無電電鍍之關鍵優點為無電電鍍同時在全部三個側邊上進行。
圖5D展示表面平滑化操作之結果,其中成品無電電鍍跡線534及通孔535與表面532共面。表面平滑化可以許多不同方式實現,例如在板與平坦表面之間經輕微壓力及線性或旋轉攪動使用施加於平坦表面上之420至1200磨粒研磨劑以提供研磨操作。可使用用於平面化表面之其他方法,包括使用化學方法、機械方法或用於形成平坦表面之其他方法來研磨或切削。本發明之添加方法之優點為對於使用蝕刻除所需跡線銅以外之全部銅的先前技術方法形成之跡線,表面上之表面污染致使鄰接跡線短路,隨著銅橋接保留,其中污染存在於銅之表面上,其不會發生在本發明之添加無電電鍍中。如圖5D中所見,跡線534支撐於三個側邊上,且鎖定至催化性預浸體508中之其相關聯的溝道中。
圖6A至圖6I展示用於使用蝕刻(減成)方法形成子層620之方法步驟之截面圖。圖6A展示具有頂部層銅包覆604A及視情況存在之底部層銅包覆604B之介電質602。介電質602可為適用於積層的任何材料,包括如前述之習知C級預浸體材料。圖6B展示鑽孔貫穿C級預浸體602及銅箔604A、604B之孔606。圖6C中後繼去污方法,其中可具有孔口內部銅及介電質污染的之鑽孔及穿孔已清潔且準備用於後續無電電鍍步驟。圖6C之典型去污方法包括:用以經由劇烈氧化而移除殘留物之高錳酸處理、中和高錳酸之中和劑處理、用於實現無電銅電鍍之諸如鈀的表面催化劑的施加以及無電電鍍步驟,從而用銅608塗佈通孔及穿孔表面以供用於頂部銅箔604A至底部銅箔604B之連接性。
圖6D展示將光阻,諸如乾膜或液體光阻610A及610B對應地施加至頂及底表面。圖6E展示使用將經由圖6F之電鍍步驟將接不收銅之區域中之光阻聚合之負光學圖像暴露光阻610A及610B後之子層,其中互連的頂部及底部銅表面604A、604B及通孔沈積銅608形成用於電鍍之單一電極,從而將電位施加在整個由子層形成之單一電極及存在於電鍍浴中之犧牲銅電極上,使得自犧牲銅電極獲取銅且至離子溶液中,電鍍至如區域612A中所展示之子層之暴露的銅區域上,但並不電鍍至塗佈有抗聚合劑610A及610B之區域上。在電鍍已將銅層建構至令人滿意的總厚度之後,將錫電鍍612A/612B施加至電鍍區域612之暴露的表面上,且錫電鍍612A/612B在步驟6G中剝除光阻610A/610B後用作抗蝕刻劑,留下錫電鍍銅604A/612A、604B/612B及暴露的銅604A/604B。在6H步驟中蝕刻掉暴露的銅604A/604B,僅留下錫電鍍銅區域604A/612A及604B/612B。在圖6I中展示之錫蝕刻步驟後,錫經移除僅留下銅跡線614A/614B及電鍍穿孔606,且成品子層620準備好用於後續積層步驟。
圖7A至圖7D展示用於使用圖5A至圖5D中前述之催化性積層方法及藉由圖4之截面圖中展示之催化性粒子分佈形成子層之改良的催化性層製 備之截面圖。圖7A展示如前所描述之催化性積層物702,其具有分散穿過C級預浸體702之催化性粒子,其中該催化性積層物形成為具有表面催化性粒子排出深度使得材料之特性為如圖4中所描述,具有自表面區域至催化性粒子排出深度之極少催化性粒子的表面區域,在該表面區域下方,排出深度催化性粒子十分充足以允許無電電鍍發生於其中形成具有等於或大於排出深度之深度的溝道之區域中。因此,表面區域具有不足以支持無電電鍍之催化性粒子密度。圖7B展示方法步驟,其中使用衝壓、鑽孔、雷射切割、水切割、或用於形成孔口或通孔706的任何其他方式形成通孔706。圖7C展示使用前述方法中之任一種形成之溝道704A及704B,且溝道形成於催化性粒子之排出深度下方以允許無電電鍍。
圖7D展示無電電鍍後之截面視圖,其中銅706在溝道704A、704B中經無電電鍍,在該等溝道中暴露催化性粒子,以及在鑽孔706中亦暴露催化性粒子,如先前所描述。在完成圖7D中之方法時,催化性積層物子層720可用於後續積層步驟中。
圖8A至圖8D展示用於形成中介連通層810之方法步驟之截面視圖。適用於積層804之核心材料層具有具有施加的離型膜802A及802B之頂表面及底表面。積層804之厚度及組分可為在積層之後展現令人滿意的對鄰接層之黏附以及在方法之積層溫度及壓力下具有穩定特性的任何材料。例示性材料為B級預浸體材料、聚醯亞胺、聚合材料、聚醯亞胺、B層級預浸體、用於可撓性或非撓性介電質之環氧樹脂或環氧樹脂摻合物、氰酸酯、聚四氟乙烯(PTFE,以商標Teflon®為人所知)或PTFE摻合預浸體或黏著劑,諸如黏著劑、聚醯亞胺、黏著劑之依序層之接合疊層或用於多層PCB製造之其他核心材料中之任一者。圖8B展示連接性孔口806之形成,其後圖8C展示積層804及置放於具有少量導電糊808之平坦表面上之膜802A/802B,該導電糊諸如藉由刮板抽吸施加於頂 部離型膜802A之表面上,其後可使導電糊乾燥以供處置穩定性。圖8D中移除離型膜802A/802B,留下包含絕緣介電質804及具有乾燥導電糊808之孔口之中介層810。
每一子層620/720具有將鄰接於中介層810之對應表面安置之表面,以及交替的子層620/720及中介層810,外部層為子層620/720。每一子層具有用於經由中介層810自一個子層連接至另一子層之呈通孔或墊形式之一或多個互連件,且將含有導電糊808之孔口置放在經由中介層810自一個子層至另一子層之每一連接通孔或墊處。
圖9A展示用於由圖6A至圖6I之方法形成之非催化性子層620-1及620-2以及使用圖8A至圖8D之方法形成之中介層810之預積層組態及對準之截面圖。圖9B展示與圖9A的疊加相同但用於使用由使用圖8A至8D之方法形成之催化性子層720-1及720-2之預積層堆疊的截面圖,其中中介層810安置於子層之間且其中孔口及導電糊緊靠鄰接子層通孔或墊集中安置。
圖9C展示應用升高之積層溫度及積層壓力之後的最終結果。將子層620A-1/720A-1,中介層810及子層620-2/720-2以機械方式積層成多層電路板,其中導電糊808鞏固成單塊導體且芯吸至鄰接子層通孔或墊中以形成導電橋接902。對於導電糊之此組合積層及鞏固成單一導體902,必須針對相互相容性選定積層之方法溫度、導電糊808之組分及子層620/720之通孔之機械態樣。在本發明之一個實例中,子層通孔為大約2密耳內徑(電鍍之前),大約1密耳內徑(電鍍之後),及中介層孔口直徑為2密耳,以及每一側上之離型膜厚度為大約1密耳(由此形成圖8D中之具有例示性2密耳直徑之大約3密耳厚之導電糊808筒)。導電糊可為先前技術中已知之任何導電糊,諸如平均大小在10u之數量級之導電粒子乳液,其中該導電粒子包括銅、銀、金、鈀、鎳、銦、鉍、錫或鉛中之至少一者,視情況以比率組合以形成具有較佳地較低單一熔融溫度 之共晶系統,或粒子可由塗佈有金、銀或鎳之銅形成,任一類型之粒子與膠著劑,諸如酚性塑料、酚醛清漆環氧樹脂(在施加熱之後即刻固化之預聚合樹脂)混合,或與溶劑混合之其他樹脂,該溶劑為諸如以下中之任一者:二乙醚、聚(甲醛/酚)2,3環氧基丙基醚或乙基山梨醇乙酸酯,其中之每一者提供快速乾燥時間以允許移除圖8D之離型膜。可替代地,導電粒子可與諸如脂族酸或硬脂酸之膠著劑及諸如醇或丙酮之溶劑混合。實例可商購導電粉末為由Hitachi Chemical公司製造之GB05K(5.5μm平均粒度)或GB10K(10u平均粒度)銀電鍍銅粉末,縱橫比為大約1.0。較佳地,導電糊808導電金屬粒子在1密耳或更小之數量級。在一較佳具體實例中,電鍍後金屬粒子具有小於中介層孔口或子層通孔孔口之直徑之1/4之最大長度。
圖10A展示具有層對之實例預積層堆疊,該等層對包含交替的子層1002a、1002b、1002c、1002d、1002e及1002f及中介層1010a、1010b、1010c、1010d及1010e。中介層1010a、1010b、1010c、1010d及1010e具有填充有導電焊糊1012、1014、1016、1018及1020之孔口,如前所述且如針對圖8A、8B、8C及8D所描述來準備。無孔口或跨鄰接子層之功能連接之中介層可視需要經用於積層之C級預浸體置換。
圖10B展示積層及鞏固後之圖10A之疊加,其中圖10A導電糊1012、1014、1016、1018及1020已熔融且回焊如相應區域1050、1052、1054、1056及1058中所展示,且鄰接中介層及子層在相同間距及方法期間經積層在一起。
在本說明書中,「大約」應理解為意謂小於比4大的倍數或更小,「實質上」應理解為意謂小於比2大的倍數或更小。值之「數量級」包括介於0.1倍值至10倍值之範圍。「密耳」應理解為0.001吋。
一般用以印刷電路板製造之某一後處理操作未經展示,且可使 用對根據新穎方法所產生之板的現有技術方法來執行。此類操作包括用於改良焊料流動之錫電鍍,用於改良導電性及降低腐蝕之金閃蒸層、阻焊遮罩操作、板上之絲網印刷資訊(部件編號、參考指定符等)、對已完成板刻痕或提供分離突出部等。此等操作中之某些可在執行於本發明之某一態樣之平面化板時產生改良結果。舉例而言,跡線或通孔上之絲網印刷燙印由於跡線及通孔厚度傳統地破碎,促使表面間斷於板表面之上,而此等操作將提供優良結果於平面化表面上。
Claims (19)
- 一種多層電路板,其由頂部子層及一或多個複合層形成,每一複合層包含中介層及子層;該頂部子層及每一該子層具有至少一個至與插入中介層對置之子層的互連件;該中介層具有安置在相關聯的該等子層之間的每一該互連件處之孔口;該等子層具有在每一該互連件處之電鍍通孔或墊;每一該互連件具有由在積層步驟期間熔融金屬糊而形成之固體金屬連接。
- 如請求項1所述之多層電路板,其中該頂部子層中之至少一者或該對之該子層中之一者為催化性積層物,該催化性積層物具有使用無電電鍍方法形成於至少一個表面上之跡線。
- 如請求項2所述之多層電路板,其中該等跡線形成於具有為至少催化性粒子排出深度之深度的溝道中。
- 如請求項1所述之多層電路板,其中該等跡線藉由蝕刻接合至非催化性積層物之銅箔而形成於該非催化性積層物上方。
- 如請求項1所述之多層電路板,其中該中介層由以下中之至少一者形成:聚醯亞胺、B級預浸體、用於可撓性或非撓性介電質之環氧樹脂或環氧樹脂摻合物、氰酸酯、聚四氟乙烯(PTFE)或PTFE摻合物預浸料或黏著劑,或諸如黏著劑、聚醯亞胺及黏著劑之依序層之接合疊層。
- 如請求項1所述之多層電路板,其中該導電糊含有以下中之至少一者:銅、銀、金、鈀、鎳、銦、鉍、錫或鉛。
- 如請求項1所述之多層電路板,其中該導電糊含有用於導電粒子之膠著劑,該膠著劑包括以下中之至少一者:酚性塑料、樹脂或酚醛清漆環氧樹脂。
- 如請求項1所述之多層電路板,其中該頂部子層或該對之子層中之至少一者包括電鍍後具有在1密耳之數量級之內徑之通孔。
- 如請求項1所述之多層電路板,其中該等中介層中之至少一者具有在1密耳直徑之數量級之孔口。
- 一種用於由頂部子層及一或多個鄰接於子層之中介層之鄰接對形成多層電路板之方法,該方法包含:形成一或多個子層,每一子層具有至少一個具備導電跡線之層及至少一個互連通孔或墊;形成一或多個中介層,每一中介層具有填充有導電糊之孔口,該孔口安置於鄰接於該中介層之每一對側上的子層之每一互連通孔或墊之位置中;將該頂部子層及該等一或多個鄰接對置放於封閉積層壓製機中且自該積層壓製機之封閉區域移除空氣;將該積層壓製機之封閉區域中之溫度增高至至少該導電糊之熔融溫度,同時提供積層壓力;提供積層壓力及熔融溫度直至該子層及鄰接層對以機械方式接合且該等互連通孔或墊由熔融導電糊電連接。
- 如請求項10所述之方法,其中該等子層中之至少一者由催化性積層物形成且該等導電跡線中之至少一者係使用無電電鍍形成至形成至該催化性積層物中之溝道中。
- 如請求項11所述之方法,其中該溝道形成於催化性粒子排出深度下方。
- 如請求項11所述之方法,其中該等催化性粒子為均相的。
- 如請求項11所述之方法,其中該等催化性粒子為以下中之至少一者:鈀(Pd)、鉑(Pt)、銠(Rh)、銥(Ir)、鎳(Ni)、金(Au)、銀 (Ag)、鈷(Co)或銅(Cu)、或其其他化合物或鹽。
- 如請求項10所述之方法,其中該等催化性粒子為非均相的。
- 如請求項10所述之方法,其中該等催化性粒子為塗佈有催化劑之填充劑。
- 如請求項16所述之方法,其中該填充劑為以下中之至少一者:黏土礦物、含水頁矽酸鋁、二氧化矽、高嶺土、聚矽酸鹽、高嶺土或瓷土族中之一員或高溫塑料。
- 如請求項16所述之方法,其中該催化劑為以下中之至少一者:鈀(Pd)、鉑(Pt)、銠(Rh)、銥(Ir)、鎳(Ni)、金(Au)、銀(Ag)、鈷(Co)或銅(Cu)、或其其他化合物或鹽。
- 如請求項10所述之方法,其中該中介層由以下中之至少一者形成:聚醯亞胺、B級預浸體、用於可撓性或非撓性介電質之環氧樹脂或環氧樹脂摻合物、氰酸酯、聚四氟乙烯(PTFE,以商標Teflon®為人所知)或PTFE摻合物預浸體或黏著劑,諸如黏著劑、聚醯亞胺及黏著劑之依序層之接合疊層。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/635,201 US10349520B2 (en) | 2017-06-28 | 2017-06-28 | Multi-layer circuit board using interposer layer and conductive paste |
US15/635,201 | 2017-06-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201907772A true TW201907772A (zh) | 2019-02-16 |
TWI776907B TWI776907B (zh) | 2022-09-11 |
Family
ID=64734994
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW107122327A TWI776907B (zh) | 2017-06-28 | 2018-06-28 | 由頂部子層及一或多個複合層形成之多層電路板,以及用於由頂部子層及一或多個鄰接於子層之中介層之鄰接對形成多層電路板之方法 |
Country Status (7)
Country | Link |
---|---|
US (2) | US10349520B2 (zh) |
EP (1) | EP3646369B1 (zh) |
JP (1) | JP7209685B2 (zh) |
KR (1) | KR102433141B1 (zh) |
CN (1) | CN111033690B (zh) |
TW (1) | TWI776907B (zh) |
WO (1) | WO2019006063A1 (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10849233B2 (en) * | 2017-07-10 | 2020-11-24 | Catlam, Llc | Process for forming traces on a catalytic laminate |
US9922951B1 (en) * | 2016-11-12 | 2018-03-20 | Sierra Circuits, Inc. | Integrated circuit wafer integration with catalytic laminate or adhesive |
KR102154193B1 (ko) * | 2018-02-20 | 2020-09-09 | 주식회사 아모그린텍 | 연성 인쇄회로기판 |
US10827624B2 (en) * | 2018-03-05 | 2020-11-03 | Catlam, Llc | Catalytic laminate with conductive traces formed during lamination |
US10681842B1 (en) * | 2019-02-27 | 2020-06-09 | International Business Machines Corporation | Monolithic signal carrier device implemented in cryogenic quantum computing applications |
US20200288569A1 (en) * | 2019-03-04 | 2020-09-10 | OSI Electronics, Inc. | Circuit Board with Improved Thermal, Moisture Resistance, and Electrical Properties |
KR20220160967A (ko) * | 2021-05-28 | 2022-12-06 | (주)티에스이 | 이종 재질의 다층 회로기판 및 그 제조 방법 |
KR102537710B1 (ko) * | 2021-05-28 | 2023-05-31 | (주)티에스이 | 일괄 접합 방식의 다층 회로기판 및 그 제조 방법 |
CN113543493B (zh) * | 2021-07-12 | 2023-05-09 | 上海嘉捷通电路科技股份有限公司 | 一种z向互连印制电路板的制备方法 |
TWI804335B (zh) * | 2021-11-15 | 2023-06-01 | 欣興電子股份有限公司 | 電路板結構 |
Family Cites Families (111)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US638406A (en) | 1899-07-24 | 1899-12-05 | Abraham L Stone | Milk cooler and aerator. |
US3014818A (en) | 1957-12-09 | 1961-12-26 | Du Pont | Electrically conducting articles and process of making same |
US3259559A (en) | 1962-08-22 | 1966-07-05 | Day Company | Method for electroless copper plating |
US3226256A (en) | 1963-01-02 | 1965-12-28 | Jr Frederick W Schneble | Method of making printed circuits |
US3269861A (en) | 1963-06-21 | 1966-08-30 | Day Company | Method for electroless copper plating |
US3322881A (en) | 1964-08-19 | 1967-05-30 | Jr Frederick W Schneble | Multilayer printed circuit assemblies |
US3269891A (en) | 1965-08-31 | 1966-08-30 | American Cyanamid Co | Fixing dry strength resin on fibers by alum in the presence of a buffer |
US3370974A (en) | 1965-10-20 | 1968-02-27 | Ivan C. Hepfer | Electroless plating on non-conductive materials |
US3799802A (en) | 1966-06-28 | 1974-03-26 | F Schneble | Plated through hole printed circuit boards |
US3546009A (en) | 1967-01-03 | 1970-12-08 | Kollmorgen Corp | Metallization of insulating substrates |
US3600330A (en) * | 1967-01-03 | 1971-08-17 | Photocircuits Division Of Koli | Metallization of insulating substrates |
DE1690224B1 (de) | 1967-08-29 | 1971-03-25 | Standard Elek K Lorenz Ag | Bad fuer die stromlose verkupferung von kunststoffplatten |
US3925138A (en) | 1973-11-27 | 1975-12-09 | Formica Int | Process for preparing an insulating substrate for use in printed circuits |
US4001466A (en) | 1973-11-27 | 1977-01-04 | Formica International Limited | Process for preparing printed circuits |
US4287253A (en) | 1975-04-08 | 1981-09-01 | Photocircuits Division Of Kollmorgen Corp. | Catalytic filler for electroless metallization of hole walls |
JPS5335163A (en) | 1976-09-14 | 1978-04-01 | Hitachi Chemical Co Ltd | Method of producing printed circuit board substrate having through hole from metallic material |
US4167601A (en) | 1976-11-15 | 1979-09-11 | Western Electric Company, Inc. | Method of depositing a stress-free electroless copper deposit |
DE2728465C2 (de) | 1977-06-24 | 1982-04-22 | Preh, Elektrofeinmechanische Werke, Jakob Preh, Nachf. Gmbh & Co, 8740 Bad Neustadt | Gedruckte Schaltung |
US4145460A (en) | 1977-06-27 | 1979-03-20 | Western Electric Company, Inc. | Method of fabricating a printed circuit board with etched through holes |
JPS5830760B2 (ja) | 1980-10-09 | 1983-07-01 | 株式会社日立製作所 | プリント回路板の製法 |
JPS5792895A (en) * | 1980-12-02 | 1982-06-09 | Nippon Telegraph & Telephone | Method of laminating printed board |
DE3121015C2 (de) | 1981-05-27 | 1986-12-04 | Friedr. Blasberg GmbH und Co KG, 5650 Solingen | Verfahren zur Aktivierung von gebeizten Oberflächen und Lösung zur Durchführung desselben |
JPS5821394A (ja) * | 1981-07-29 | 1983-02-08 | 三喜工業株式会社 | プリント配線板の製造法 |
US4354895A (en) | 1981-11-27 | 1982-10-19 | International Business Machines Corporation | Method for making laminated multilayer circuit boards |
US4512829A (en) | 1983-04-07 | 1985-04-23 | Satosen Co., Ltd. | Process for producing printed circuit boards |
DE3408630A1 (de) | 1984-03-09 | 1985-09-12 | Hoechst Ag, 6230 Frankfurt | Verfahren und schichtmaterial zur herstellung durchkontaktierter elektrischer leiterplatten |
US4581301A (en) | 1984-04-10 | 1986-04-08 | Michaelson Henry W | Additive adhesive based process for the manufacture of printed circuit boards |
US4585502A (en) | 1984-04-27 | 1986-04-29 | Hitachi Condenser Co., Ltd. | Process for producing printed circuit board |
JPS6155989A (ja) * | 1984-08-27 | 1986-03-20 | 日立化成工業株式会社 | 印刷配線板の製造法 |
US4767665A (en) * | 1985-09-16 | 1988-08-30 | Seeger Richard E | Article formed by electroless plating |
US4908242A (en) | 1986-10-31 | 1990-03-13 | Kollmorgen Corporation | Method of consistently producing a copper deposit on a substrate by electroless deposition which deposit is essentially free of fissures |
US4859571A (en) | 1986-12-30 | 1989-08-22 | E. I. Du Pont De Nemours And Company | Embedded catalyst receptors for metallization of dielectrics |
US4954185A (en) | 1987-01-14 | 1990-09-04 | Kollmorgen Corporation | Method of applying adherent coating on copper |
US5309632A (en) | 1988-03-28 | 1994-05-10 | Hitachi Chemical Co., Ltd. | Process for producing printed wiring board |
US5153987A (en) | 1988-07-15 | 1992-10-13 | Hitachi Chemical Company, Ltd. | Process for producing printed wiring boards |
US5260170A (en) | 1990-01-08 | 1993-11-09 | Motorola, Inc. | Dielectric layered sequentially processed circuit board |
JP2881963B2 (ja) | 1990-05-25 | 1999-04-12 | ソニー株式会社 | 配線基板及びその製造方法 |
US5252195A (en) * | 1990-08-20 | 1993-10-12 | Mitsubishi Rayon Company Ltd. | Process for producing a printed wiring board |
JPH04100294A (ja) | 1990-08-20 | 1992-04-02 | Mitsubishi Rayon Co Ltd | プリント配線板の製造方法 |
US5200720A (en) | 1990-11-27 | 1993-04-06 | Sam Hwa Capacitor Co., Ltd. | Emi bead core filter, process and apparatus thereof |
US5162144A (en) | 1991-08-01 | 1992-11-10 | Motorola, Inc. | Process for metallizing substrates using starved-reaction metal-oxide reduction |
DE69225495T2 (de) * | 1991-12-31 | 1998-10-08 | Tessera Inc | Verfahren zur konstruktion von mehrschichtigen schaltungen, strukturen mit personalisierungsmerkmalen und darin verwendete komponenten |
US5272600A (en) | 1992-09-02 | 1993-12-21 | Microelectronics And Computer Technology Corporation | Electrical interconnect device with interwoven power and ground lines and capacitive vias |
US5340746A (en) | 1993-01-08 | 1994-08-23 | Minnesota Mining And Manufacturing Company | Composite reactive articles for the determination of cyanide |
US5419954A (en) | 1993-02-04 | 1995-05-30 | The Alpha Corporation | Composition including a catalytic metal-polymer complex and a method of manufacturing a laminate preform or a laminate which is catalytically effective for subsequent electroless metallization thereof |
JP3309522B2 (ja) * | 1993-11-15 | 2002-07-29 | 株式会社村田製作所 | 多層基板及びその製造方法 |
DE19731346C2 (de) | 1997-06-06 | 2003-09-25 | Lpkf Laser & Electronics Ag | Leiterbahnstrukturen und ein Verfahren zu deren Herstellung |
JP3100131B1 (ja) | 1998-09-07 | 2000-10-16 | キヤノン株式会社 | 画像形成装置 |
MY144573A (en) | 1998-09-14 | 2011-10-14 | Ibiden Co Ltd | Printed circuit board and method for its production |
DE60045566D1 (de) | 1999-08-06 | 2011-03-03 | Ibiden Co Ltd | Mehrschicht-Leiterplatte |
EP2053908B1 (en) | 1999-08-12 | 2011-12-21 | Ibiden Co., Ltd. | Multilayer printed wiring board with a solder resist composition |
US6774315B1 (en) | 2000-05-24 | 2004-08-10 | International Business Machines Corporation | Floating interposer |
US6452278B1 (en) | 2000-06-30 | 2002-09-17 | Amkor Technology, Inc. | Low profile package for plural semiconductor dies |
JP3867523B2 (ja) | 2000-12-26 | 2007-01-10 | 株式会社デンソー | プリント基板およびその製造方法 |
US6630743B2 (en) | 2001-02-27 | 2003-10-07 | International Business Machines Corporation | Copper plated PTH barrels and methods for fabricating |
US7334326B1 (en) | 2001-06-19 | 2008-02-26 | Amkor Technology, Inc. | Method for making an integrated circuit substrate having embedded passive components |
US20030094666A1 (en) | 2001-11-16 | 2003-05-22 | R-Tec Corporation | Interposer |
GB0212632D0 (en) | 2002-05-31 | 2002-07-10 | Shipley Co Llc | Laser-activated dielectric material and method for using the same in an electroless deposition process |
US6638607B1 (en) * | 2002-10-30 | 2003-10-28 | International Business Machines Corporation | Method and structure for producing Z-axis interconnection assembly of printed wiring board elements |
JP4266310B2 (ja) | 2003-01-31 | 2009-05-20 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | 感光性樹脂組成物および該組成物を用いた樹脂パターンの形成方法 |
US7067454B2 (en) | 2003-04-09 | 2006-06-27 | Honeywell International Inc. | Low cost quick response catalyst system |
TWI224377B (en) | 2003-11-14 | 2004-11-21 | Ind Tech Res Inst | Wafer level chip scale packaging structure and method of fabrication the same |
US7169691B2 (en) | 2004-01-29 | 2007-01-30 | Micron Technology, Inc. | Method of fabricating wafer-level packaging with sidewall passivation and related apparatus |
US7470990B2 (en) * | 2004-03-31 | 2008-12-30 | Endicott Interconnect Technologies, Inc. | Low moisture absorptive circuitized substrate with reduced thermal expansion, method of making same, electrical assembly utilizing same, and information handling system utilizing same |
JP4146826B2 (ja) | 2004-09-14 | 2008-09-10 | カシオマイクロニクス株式会社 | 配線基板及び半導体装置 |
TW200618705A (en) | 2004-09-16 | 2006-06-01 | Tdk Corp | Multilayer substrate and manufacturing method thereof |
US20060068173A1 (en) | 2004-09-30 | 2006-03-30 | Ebara Corporation | Methods for forming and patterning of metallic films |
US7271099B2 (en) | 2005-06-06 | 2007-09-18 | Ffei Limited | Forming a conductive pattern on a substrate |
JP2007027312A (ja) | 2005-07-14 | 2007-02-01 | Fujifilm Holdings Corp | 配線基板の製造方法および配線基板 |
EP1767663A1 (en) | 2005-09-23 | 2007-03-28 | Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO | Method for partially metallizing a product |
US8059415B2 (en) | 2006-12-15 | 2011-11-15 | Finisar Corporation | Molded communications module having integrated plastic circuit structures |
US7752752B1 (en) | 2007-01-09 | 2010-07-13 | Amkor Technology, Inc. | Method of fabricating an embedded circuit pattern |
US7829990B1 (en) | 2007-01-18 | 2010-11-09 | Amkor Technology, Inc. | Stackable semiconductor package including laminate interposer |
JP2008218714A (ja) | 2007-03-05 | 2008-09-18 | Bridgestone Corp | 光透過性電磁波シールド材及びその製造方法、並びに貴金属の極薄膜を有する微粒子及びその製造方法 |
BRPI0813652A2 (pt) | 2007-07-02 | 2014-12-30 | 3M Innovative Properties Co | Método de padronização de um substrato |
US7632753B1 (en) | 2007-10-04 | 2009-12-15 | Amkor Technology, Inc. | Wafer level package utilizing laser-activated dielectric material |
US9117714B2 (en) | 2007-10-19 | 2015-08-25 | Visera Technologies Company Limited | Wafer level package and mask for fabricating the same |
KR100936078B1 (ko) | 2007-11-12 | 2010-01-12 | 삼성전기주식회사 | 전기부재 및 이를 이용한 인쇄회로기판의 제조방법 |
US8246774B2 (en) | 2007-12-27 | 2012-08-21 | Alps Electric Co., Ltd. | Resin bonding method by photoirradiation, method for producing resin article, resin article produced by the same method, method for producing microchip, and microchip produced by the same method |
TWI384594B (zh) | 2008-06-05 | 2013-02-01 | Unimicron Technology Corp | 內埋式線路結構的製程 |
US9000558B2 (en) | 2009-01-19 | 2015-04-07 | Broadcom Corporation | Wafer-level flip chip package with RF passive element/ package signal connection overlay |
TWI388122B (zh) | 2009-04-20 | 2013-03-01 | Unimicron Technology Corp | 形成複合材料電路板結構的方法 |
KR101088631B1 (ko) * | 2009-05-27 | 2011-12-01 | 전자부품연구원 | 비아 페이스트 조성물 |
US9136196B2 (en) | 2009-06-02 | 2015-09-15 | Hsio Technologies, Llc | Compliant printed circuit wafer level semiconductor package |
TWI392425B (zh) | 2009-08-25 | 2013-04-01 | Unimicron Technology Corp | 內埋式線路板及其製造方法 |
US20110281135A1 (en) | 2009-12-17 | 2011-11-17 | Byd Company Limited | Surface metallizing method, method for preparing plastic article and plastic article made therefrom |
US8541687B2 (en) * | 2010-04-22 | 2013-09-24 | Endicott Interconnect Technologies, Inc. | Coreless layer buildup structure |
KR101680082B1 (ko) | 2010-05-07 | 2016-11-29 | 삼성전자 주식회사 | 웨이퍼 레벨 패키지 및 웨이퍼 레벨 패키지의 형성방법 |
CN102071411B (zh) | 2010-08-19 | 2012-05-30 | 比亚迪股份有限公司 | 一种塑料制品的制备方法及一种塑料制品 |
TWI423750B (zh) | 2010-09-24 | 2014-01-11 | Kuang Hong Prec Co Ltd | 非導電性載體形成電路結構之製造方法 |
US8941222B2 (en) | 2010-11-11 | 2015-01-27 | Advanced Semiconductor Engineering Inc. | Wafer level semiconductor package and manufacturing methods thereof |
GB2489042A (en) | 2011-03-18 | 2012-09-19 | Conductive Inkjet Technology Ltd | Photo-patternable structure |
US8648277B2 (en) | 2011-03-31 | 2014-02-11 | Electro Scientific Industries, Inc. | Laser direct ablation with picosecond laser pulses at high pulse repetition frequencies |
JP5821394B2 (ja) | 2011-08-16 | 2015-11-24 | 株式会社リコー | 撮像装置 |
EP2559486B1 (en) | 2011-08-17 | 2017-04-19 | Rohm and Haas Electronic Materials, L.L.C. | Stable catalysts for electroless metallization |
US8784952B2 (en) | 2011-08-19 | 2014-07-22 | Earthone Circuit Technologies Corporation | Method of forming a conductive image on a non-conductive surface |
US8592259B2 (en) | 2011-11-29 | 2013-11-26 | Broadcom Corporation | Method of fabricating a wafer level semiconductor package having a pre-formed dielectric layer |
US8643150B1 (en) | 2012-02-15 | 2014-02-04 | Maxim Integrated Products, Inc. | Wafer-level package device having solder bump assemblies that include an inner pillar structure |
TWI495066B (zh) | 2012-08-31 | 2015-08-01 | Chipmos Technologies Inc | 晶圓級封裝結構及其製造方法 |
DE102012216101B4 (de) | 2012-09-12 | 2016-03-24 | Festo Ag & Co. Kg | Verfahren zum Herstellen einer in einem Substrat integrierten Spule, Verfahren zur Herstellung einer mehrschichtigen Leiterplatte und elektronisches Gerät |
US9000587B1 (en) | 2013-03-12 | 2015-04-07 | Maxim Integrated Products, Inc. | Wafer-level thin chip integration |
JP6155989B2 (ja) | 2013-09-04 | 2017-07-05 | 凸版印刷株式会社 | 膜電極接合体の製造装置、及び製造方法 |
US9380700B2 (en) * | 2014-05-19 | 2016-06-28 | Sierra Circuits, Inc. | Method for forming traces of a printed circuit board |
US9398703B2 (en) | 2014-05-19 | 2016-07-19 | Sierra Circuits, Inc. | Via in a printed circuit board |
US9631279B2 (en) | 2014-05-19 | 2017-04-25 | Sierra Circuits, Inc. | Methods for forming embedded traces |
US10573610B2 (en) | 2014-05-19 | 2020-02-25 | Catlam, Llc | Method for wafer level packaging |
US9706667B2 (en) | 2014-05-19 | 2017-07-11 | Sierra Circuits, Inc. | Via in a printed circuit board |
WO2016171245A1 (ja) * | 2015-04-24 | 2016-10-27 | 富士フイルム株式会社 | 積層体 |
US9841009B2 (en) * | 2015-07-28 | 2017-12-12 | Northrop Grumman Systems Corporation | Hybrid power system |
JP2017191892A (ja) * | 2016-04-14 | 2017-10-19 | イビデン株式会社 | プリント配線基板及びその製造方法 |
KR102346221B1 (ko) * | 2016-06-06 | 2021-12-31 | 쇼와덴코머티리얼즈가부시끼가이샤 | 다층 배선판의 제조 방법 |
-
2017
- 2017-06-28 US US15/635,201 patent/US10349520B2/en active Active
-
2018
- 2018-06-28 TW TW107122327A patent/TWI776907B/zh active
- 2018-06-28 CN CN201880055997.7A patent/CN111033690B/zh active Active
- 2018-06-28 EP EP18824491.7A patent/EP3646369B1/en active Active
- 2018-06-28 KR KR1020207002680A patent/KR102433141B1/ko active IP Right Grant
- 2018-06-28 JP JP2020500081A patent/JP7209685B2/ja active Active
- 2018-06-28 WO PCT/US2018/039906 patent/WO2019006063A1/en unknown
-
2019
- 2019-05-28 US US16/424,231 patent/US10765003B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP7209685B2 (ja) | 2023-01-20 |
US10765003B2 (en) | 2020-09-01 |
CN111033690B (zh) | 2021-09-03 |
EP3646369A4 (en) | 2021-03-24 |
CN111033690A (zh) | 2020-04-17 |
US20190320530A1 (en) | 2019-10-17 |
JP2020528665A (ja) | 2020-09-24 |
US10349520B2 (en) | 2019-07-09 |
KR20200031112A (ko) | 2020-03-23 |
TWI776907B (zh) | 2022-09-11 |
EP3646369A1 (en) | 2020-05-06 |
US20190008044A1 (en) | 2019-01-03 |
EP3646369B1 (en) | 2024-07-24 |
WO2019006063A1 (en) | 2019-01-03 |
KR102433141B1 (ko) | 2022-08-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI776907B (zh) | 由頂部子層及一或多個複合層形成之多層電路板,以及用於由頂部子層及一或多個鄰接於子層之中介層之鄰接對形成多層電路板之方法 | |
TWI766064B (zh) | 用於印刷電路板的半加成方法 | |
US10959329B2 (en) | Circuit board using non-catalytic laminate with catalytic adhesive overlay | |
US11653453B2 (en) | Electroless and electrolytic deposition process for forming traces on a catalytic laminate | |
TWI737852B (zh) | 以催化積層或黏著劑整合積體電路晶圓 | |
KR102649271B1 (ko) | 트레이스 및 비아를 갖는 플라스마 에칭 촉매 라미네이트 | |
US11406024B2 (en) | Multi-layer circuit board with traces thicker than a circuit board | |
CN112703272B (zh) | 具有在层压期间形成的导电迹线的催化层压板 | |
US20200008306A1 (en) | UV curable Catalytic Adhesive for Circuit Boards with Traces and Vias | |
TWI809055B (zh) | 具有在積層期間形成的導電跡線之催化性積層板 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GD4A | Issue of patent certificate for granted invention patent |