TW201842195A - 密封裝置 - Google Patents
密封裝置 Download PDFInfo
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- TW201842195A TW201842195A TW107112129A TW107112129A TW201842195A TW 201842195 A TW201842195 A TW 201842195A TW 107112129 A TW107112129 A TW 107112129A TW 107112129 A TW107112129 A TW 107112129A TW 201842195 A TW201842195 A TW 201842195A
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- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D9/00—Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articles; Furnaces therefor
- C21D9/52—Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articles; Furnaces therefor for wires; for strips ; for rods of unlimited length
- C21D9/54—Furnaces for treating strips or wire
- C21D9/56—Continuous furnaces for strip or wire
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- C21D9/565—Sealing arrangements
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- C—CHEMISTRY; METALLURGY
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- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
- C21D1/74—Methods of treatment in inert gas, controlled atmosphere, vacuum or pulverulent material
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- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
- C21D1/74—Methods of treatment in inert gas, controlled atmosphere, vacuum or pulverulent material
- C21D1/76—Adjusting the composition of the atmosphere
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- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D9/00—Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articles; Furnaces therefor
- C21D9/46—Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articles; Furnaces therefor for sheet metals
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- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D9/00—Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articles; Furnaces therefor
- C21D9/52—Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articles; Furnaces therefor for wires; for strips ; for rods of unlimited length
- C21D9/54—Furnaces for treating strips or wire
- C21D9/56—Continuous furnaces for strip or wire
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- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D9/00—Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articles; Furnaces therefor
- C21D9/52—Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articles; Furnaces therefor for wires; for strips ; for rods of unlimited length
- C21D9/54—Furnaces for treating strips or wire
- C21D9/56—Continuous furnaces for strip or wire
- C21D9/561—Continuous furnaces for strip or wire with a controlled atmosphere or vacuum
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45559—Diffusion of reactive gas to substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B9/00—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
- F27B9/14—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity characterised by the path of the charge during treatment; characterised by the means by which the charge is moved during treatment
- F27B9/20—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity characterised by the path of the charge during treatment; characterised by the means by which the charge is moved during treatment the charge moving in a substantially straight path tunnel furnace
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B9/00—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
- F27B9/28—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity for treating continuous lengths of work
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D99/00—Subject matter not provided for in other groups of this subclass
- F27D99/0073—Seals
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D7/00—Forming, maintaining, or circulating atmospheres in heating chambers
- F27D7/06—Forming or maintaining special atmospheres or vacuum within heating chambers
Abstract
本發明之目的,在於提供可維持高密封性之密封裝置。
本發明之密封裝置係於使鋼帶通過之熱處理設備內,具備有被配置於上述鋼帶之上側且可與上述鋼帶接觸之旋轉阻尼器、及於與上述旋轉阻尼器對向之位置被配置於上述鋼帶之下側之輥,並使鋼帶通過上述旋轉阻尼器與上述輥之對向部之間者,其中,成對之旋轉阻尼器及輥於上述熱處理設備內沿著通過方向被串列地配置2對,且惰性氣體被供給至由上述被串列地配置之上述成對之旋轉阻尼器及輥彼此所分隔之空間內。
Description
本發明係關於設置於例如鋼板等之鋼帶之熱處理設備內的密封裝置。尤其,關於設置於利用具備有化學氣相沈積(以下,稱為CVD(Chemical Vapor Deposition))處理爐之連續浸矽處理設備來製造高矽鋼板(6.5%Si鋼)之熱處理爐內的密封裝置。
過去以來,於金屬材料之加熱爐、或熱處理爐中,將爐內之環境維持於特定狀態來謀求提升熱處理材之外觀上之性能、或者材質的改善。作為於特定之爐內環境下進行熱處理來謀求材質之改善的方法,例如於專利文獻1記載有例如利用具備有CVD處理爐之連續浸矽處理設備來得到高矽鋼板(6.5%Si鋼)之方法。
連續浸矽處理設備,係由爐本體1所構成,而該爐本體1係由如圖1所示之浸矽處理設備100形成隧道狀空間之耐火物之爐壁所構成。要改善材質之鋼帶(鋼板)S係由輥2所支撐而以加熱爐A-CVD處理爐B-擴散處理爐C-冷卻爐D之順序連續地通過爐內。此時,鋼帶S在加熱爐A中於無氧化性環境中被加熱至CVD處理溫度之後,被導引至CVD處理爐B。含有SiCl4之反應氣體被供給至該CVD處理爐B,且反應氣體自噴吹噴嘴3被噴抵於鋼帶S之表面,而執行浸矽處理。接著,鋼帶S被導引至擴散處理爐C,於此處被均熱保持為既定溫度而執行Si之擴散處理。於如此 之處理後,利用冷卻爐D被冷卻至常溫或適當之溫度,並被捲繞於線圈。
於如連續浸矽處理設備之熱處理爐中,為了將各爐內之環境維持於特定狀態,必須將材料之出入口等加以密封。亦即,必須確實地進行加熱爐A與CVD處理爐B之間、及CVD處理爐B與擴散處理爐C之間之密封。因此,如圖1所示,於各爐間設置有密封裝置4。關於如此之密封裝置之密封性之提升,例如於專利文獻2中記載有一種密封裝置,其具備有硬質材料之旋轉阻尼器及輥、以及與上述旋轉阻尼器之上方接觸而將爐內加以密封之升降阻尼器,將旋轉阻尼器與輥之軸間距離加以固定,並將旋轉阻尼器與輥之半徑之合計小於旋轉阻尼器與輥之軸間距離的部分設置於旋轉阻尼器。藉此,將與鋼板等鋼帶之間隙設為極微小者,而可得到高密封性。
專利文獻1:日本專利特開昭63-24038號公報
專利文獻2:日本專利特開平7-268490號公報
然而,在如專利文獻2之密封裝置之情形時,若於1000度以上之高溫中進行熱處理,位於旋轉阻尼器正下方之爐內輥便會偏芯。其結果,鋼帶與旋轉阻尼器之間隙變大,而成為爐內環境氣體之洩漏路徑。又,接近於旋轉阻尼器與爐內輥之周邊之耐火 物(纖維),會因CVD處理所使用之SiCl4之影響而劣化,從而導致厚度變薄或孔隙率之下降。因此,於旋轉阻尼器或爐內輥之周邊亦產生間隙,而此處可能成為洩漏路徑。
本發明係鑒於上述實情所完成者,其目的在於提供可維持高密封性之密封裝置。
本案發明人等努力研究加熱爐A與CVD處理爐B之間、及CVD處理爐B與擴散處理爐C之間之密封性。其結果,得到如下之見解:於如專利文獻2之利用旋轉阻尼器與輥上下夾住鋼帶藉此得到密封性之密封裝置中,可將2個旋轉阻尼器串列配置,並對該旋轉阻尼器之間投入N2等惰性氣體,藉此確保高密封性。
本發明係根據如此之見解所完成者,並以如下內容為主旨者。
[1]一種密封裝置,係於使鋼帶通過之熱處理設備內,具備有被配置於上述鋼帶之上側且可與上述鋼帶接觸之旋轉阻尼器、及於與上述旋轉阻尼器對向之位置被配置於上述鋼帶之下側之輥,並使鋼帶通過上述旋轉阻尼器與上述輥之對向部之間者;其中,成對之旋轉阻尼器及輥於上述熱處理設備內沿著通過方向被串列配置2對,且惰性氣體被供給至由上述被串列地配置之上述成對之旋轉阻尼器及輥彼此所分隔之空間內。
[2]如[1]所記載之密封裝置,其中,上述旋轉阻尼器於鋼帶寬度方向上具有使惰性氣體朝向上述鋼帶噴出之孔。
[3]如[1]或[2]所記載之密封裝置,其中,上述惰性氣體之壓力係以上述空間內之壓力成為5mmH2O~100mmH2O之方式被設定。
[4]如[1]至[3]中任一項所記載之密封裝置,其中,其被設置於上述熱處理設備內之CVD處理爐內。
[5]如[1]至[4]中任一項所記載之密封裝置,其中,其分別被設置於上述熱處理設備內之鋼帶通過方向上游側及下游側。
根據本發明,由於對既定空間內投入惰性氣體,因此使密封性提升。因此,可減少爐內環境氣體之逆流。又,根據本發明,藉由密封性之提升,可降低各機器之更換頻率或維護頻率。
1‧‧‧爐本體
2‧‧‧輥
3‧‧‧噴吹噴嘴
4‧‧‧密封裝置
5‧‧‧旋轉阻尼器
6‧‧‧輥
7‧‧‧升降阻尼器
8‧‧‧間隔板
9‧‧‧空間
10‧‧‧孔
100‧‧‧浸矽處理設備
A‧‧‧加熱爐
B‧‧‧CVD處理爐
C‧‧‧擴散處理爐
D‧‧‧冷卻爐
S‧‧‧鋼帶(鋼板)
圖1係連續浸矽處理設備之概略圖。
圖2係作為本發明一實施形態之密封裝置的圖。
圖3係作為本發明一實施形態之密封裝置之放大圖。
圖4係表示本發明之另一實施形態之密封裝置的圖。
圖5係將使用本發明之密封裝置之情形與使用習知之密封裝置之情形之缺陷發生率進行比較的圖表。
圖6係將使用本發明之密封裝置之情形與使用習知之密封裝置之情形之旋轉阻尼器之更換週期進行比較的圖表。
圖2係表示作為本發明一實施形態之密封裝置的圖。本發明之密封裝置4係設置於浸矽處理設備(熱處理設備)100中之爐本體1內,且具備有2對成對之旋轉阻尼器5及輥6。
旋轉阻尼器5係配置於鋼帶S之上側。旋轉阻尼器5係設置為可朝橫越爐本體1內之方向、即鋼帶長度方向旋轉。關於 旋轉阻尼器5之形狀並無特別限制,只要為如圖2所示之設置有沿著半徑方向切缺之部分般可調整間隙之形狀即可。於旋轉阻尼器5之上方設置有升降阻尼器7,且被設置為可於爐本體1之頂壁上下移動。旋轉阻尼器5藉由升降阻尼器7之上升而成為可旋轉,並且藉由使升降阻尼器7下降而可適當地控制旋轉阻尼器5之旋轉動作。因此,以成為與要被熱處理之鋼帶S之厚度對應之距離之方式來選擇旋轉阻尼器5之切口位置,使升降阻尼器7下降並將旋轉阻尼器5以不旋轉之方式加以固定,藉此適當操作對鋼帶S之密封性。
輥6係於與旋轉阻尼器5對向之位置被配置於鋼帶S之下側。輥6係於鋼帶寬度方向上支撐鋼帶S之支撐輥,而鋼帶S通過旋轉阻尼器5及輥6之對向部之間。又,作為密封壁之間隔板8自爐本體1之地板部豎立,並於與旋轉阻尼器5對向之位置與輥6相接。
於本發明中,成對之旋轉阻尼器5及輥6沿著通過方向被串列地配置2對。亦即,如圖2所示,成對之旋轉阻尼器5及輥6沿著通過方向被串列地配置2組。如圖2所示,惰性氣體被供給至由被串列地配置之成對之旋轉阻尼器5及輥6彼此所分隔之空間9內。由於藉由以惰性氣體充滿空間9內,可維持為較爐內壓力更高壓,因此可提升密封性而防止爐內環境氣體逆流至其他爐。又,由於可維持固定之密封性,因此可減少接近於旋轉阻尼器與爐內輥之周邊之耐火物(纖維)因CVD處理所使用之SiCl4之影響而劣化等之情形。因此,可降低爐內輥等各機器之更換頻率、周邊之耐火物之維護頻率。
作為被供給至空間9內之惰性氣體雖無特別限制,但 較佳為N2。又,關於惰性氣體之供給方法亦無特別限制,例如只要於爐本體1之側壁設置惰性氣體之供給口(未圖示)而自供給口對空間9內供給惰性氣體即可。
於本發明中,旋轉阻尼器5較佳為於鋼帶寬度方向具有使惰性氣體朝向鋼帶S噴出之孔10。藉由自旋轉阻尼器5之孔10朝向鋼帶S噴出惰性氣體,可利用惰性氣體之幕簾(curtain)將旋轉阻尼器5與鋼帶S之間遮斷。其結果,可得到更高之密封性。
關於噴出惰性氣體之孔10之排列,只要沿著鋼帶寬度方向排列有複數即可。關於孔10之配置亦無特別限定,例如可列舉串列、交錯狀、或多列配置等。再者,圖3係多列配置之例。又,關於孔10之形狀亦無特別限定,例如可列舉圓孔、橢圓(寬度方向較長)、狹縫孔等。又,關於朝向旋轉阻尼器5之惰性氣體之供給方法亦無特別限制,例如只要自旋轉阻尼器5之旋轉軸部(未圖示)供給惰性氣體,且惰性氣體自軸部通過被設置於旋轉阻尼器5本體之孔所噴出即可。
再者,在自孔10噴出之惰性氣體之壓力過高或溫度過低之情形時,存在有對在1000度以上之高溫中進行熱處理之鋼帶造成變形等不良影響之可能性。因此,自旋轉阻尼器5之孔朝向鋼帶噴吹之惰性氣體之壓力,較佳係設為100mmH2O以下,而溫度較佳係設為1000度以上。
作為惰性氣體之壓力,較佳係以空間9內之壓力成為5mmH2O~100mmH2O之方式被設定。若空間9內之壓力未滿5mmH2O,則壓力過低而難以控制。另一方面,若空間9內之壓力超過100mmH2O,由於旋轉阻尼器5與鋼帶S間會存在間隙,因此 難以保持壓力。空間9內之壓力更佳為10mmH2O~50mmH2O。
本發明之密封裝置4較佳係被設置於浸矽處理設備100內之CVD處理爐B內。如前所述,含有SiCl4之反應氣體被供給至CVD處理爐B,且反應氣體自噴吹噴嘴3被噴吹於鋼帶S之表面,藉此執行浸矽處理。氯化鐵(氣體)係作為浸矽處理時之副產物而被包含於該CVD處理爐B之環境氣體中。若含有該氯化鐵(氣體)之CVD處理爐中之環境氣體逆流,便會於加熱爐A或擴散熱處理爐C內被冷卻,且在低於1100℃時凝集化,而附著於鋼帶S,藉此使製品之外觀惡化,而增加缺陷發生率。因此,藉由於CVD處理爐B設置本發明之密封裝置,可維持高密封性,而可防止CVD處理爐B內之環境氣體之逆流。其結果,可防止因氯化鐵附著所導致之良率惡化。
又,本發明之密封裝置4較佳係分別被設置於鋼帶通過方向之上游側及下游側。藉由在上游側及下游側分別設置密封裝置,可防止爐內環境氣體逆流至其他爐。更佳為,於CVD處理爐B內之鋼帶通過方向上游側及下游側分別設置密封裝置4(參照圖4)。如圖4所示,藉由在浸矽處理前後之位置設置本發明之密封裝置4,可進一步防止CVD處理爐B內之環境氣體之逆流,並且可進一步防止氯化鐵附著所導致之良率惡化。
再者,關於本發明之密封裝置4之設置數量,雖無特別限制,但就設備上之制約與維護面而言,較佳為2~3個左右。
關於旋轉阻尼器5,例如只要為硬質材料即可。關於形狀等亦無特別限定,只要被設置為可以埋沒在爐本體1之頂壁之狀態轉動且周面之一部分於爐本體1內露出即可。又,旋轉阻尼器 5只要被設置為朝向輥6之垂直上方平行即可。
又,就可將間隙設為極微小且可實現完全之密封狀態而言,較佳為如專利文獻2般將旋轉阻尼器5與輥6之軸間距離加以固定,且將旋轉阻尼器5與輥6之半徑之合計小於旋轉阻尼器5與輥6之軸間距離的部分設置於旋轉阻尼器。
又,關於升降阻尼器7亦無特別限定。例如,只要由朝向旋轉阻尼器5之上部平行地相接/分離之擋板狀之陶瓷纖維所構成且被設置為可於爐本體1之頂壁上下移動即可。
於具有如圖1所示之設備構成之連續浸矽處理設備中,使用含有SiCl4之處理氣體對板厚0.1mm之鋼帶來實施浸矽處理,而製造高矽鋼帶(6.5mass%Si材)。此時,作為密封裝置,使用圖2所示之本發明之密封裝置。成對之旋轉阻尼器5及輥6係於CVD處理爐B內之上游側及下游側分別各設置2對。
由旋轉阻尼器5及輥6所形成之空間9之壓力,保持為30mmH2O。再者,上述壓力較加熱爐A、CVD處理爐B、擴散處理爐C之各爐內壓力(20mmH2O)高壓。
求得因環境氣體之逆流導致氯化鐵附著於鋼帶表面所引起之缺陷發生率。缺陷發生率的求法如以下所述。
<缺陷發生率>
在有缺陷發生之情形時,將該缺陷部之前後1m設為缺陷長度,並將1個線圈內之該缺陷長度之累計除以該線圈之長度所得者設為缺陷發生率,將每個線圈之缺陷發生率以10個線圈之量將進行平均所得之結果來進行比較。
在將作為習知之密封裝置而使用專利文獻2之密封裝置之情形(比較例)之缺陷發生率設為1之情形時使用本發明之密封裝置之情形時之缺陷發生率進行比較之結果,表示於圖5。
根據圖5,相較於比較例,使用本發明之密封裝置之情形時(本發明例)之缺陷發生率減少至0.4。因此,藉由使用本發明之密封裝置,可提升密封性而降低缺陷發生率。
與實施例1同樣地製造高矽鋼帶,對所使用之旋轉阻尼器之更換週期進行調查。關於更換週期,將密封裝置間壓力與前後爐內之差壓連續成為5mmH2O以下之情形判斷為更換之時間點。將習知(變更前)之更換週期設為1,並將對使用本發明之密封裝置之情形時之旋轉阻尼器之更換週期進行比較之結果,表示於圖6。
根據圖6,相較於比較例,使用本發明之密封裝置之情形時(本發明例)之更換週期成為1.5倍。因此,藉由使用本發明之密封裝置,可提升密封性而降低更換頻率。
Claims (5)
- 一種密封裝置,係於使鋼帶通過之熱處理設備內,具備有被配置於上述鋼帶之上側且可與上述鋼帶接觸之旋轉阻尼器、及於與上述旋轉阻尼器對向之位置被配置於上述鋼帶之下側之輥,並使鋼帶通過上述旋轉阻尼器與上述輥之對向部之間者;其中,成對之旋轉阻尼器及輥於上述熱處理設備內沿著通過方向被串列地配置2對,且惰性氣體被供給至由上述被串列地配置之上述成對之旋轉阻尼器及輥彼此所分隔之空間內。
- 如請求項1之密封裝置,其中,上述旋轉阻尼器於鋼帶寬度方向上具有使惰性氣體朝向上述鋼帶噴出之孔。
- 如請求項1或2之密封裝置,其中,上述惰性氣體之壓力係以上述空間內之壓力成為5mmH 2O~100mmH 2O之方式被設定。
- 如請求項1至3中任一項之密封裝置,其中,其被設置於上述熱處理設備內之CVD(化學氣相沈積;Chemical Vapor Deposition)處理爐內。
- 如請求項1至4中任一項之密封裝置,其中,其分別被設置於上述熱處理設備內之鋼帶通過方向上游側及下游側。
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JPS59133330A (ja) * | 1983-01-19 | 1984-07-31 | Nippon Steel Corp | 鋼帯連続熱処理設備におけるシ−ル方法および装置 |
JPS6324038A (ja) | 1986-07-17 | 1988-02-01 | Nippon Kokan Kk <Nkk> | シ−ル装置 |
JPH086147B2 (ja) * | 1988-07-15 | 1996-01-24 | 日新製鋼株式会社 | 光輝焼鈍炉出入口のシール方法 |
JP2827753B2 (ja) * | 1992-09-08 | 1998-11-25 | 日本鋼管株式会社 | 連続処理炉における異種炉内雰囲気ガスの混合防止装置 |
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JP2804221B2 (ja) * | 1993-09-28 | 1998-09-24 | 株式会社ノリタケカンパニーリミテド | 熱処理炉におけるシール装置 |
JP3071114B2 (ja) * | 1993-12-15 | 2000-07-31 | 日新製鋼株式会社 | 連続焼鈍炉,連続塗装設備等の区画出入口のシール装置 |
JP2876981B2 (ja) | 1994-03-29 | 1999-03-31 | 日本鋼管株式会社 | 炉内シール装置 |
JP2726242B2 (ja) * | 1994-06-07 | 1998-03-11 | 日新製鋼株式会社 | 雰囲気設備の入口または出口のシール装置 |
FR2760077B1 (fr) | 1997-02-27 | 1999-04-30 | Stein Heurtey | Dispositif pour assurer le remplacement d'un rouleau support de bande dans un four de traitement thermique |
JPH10265855A (ja) * | 1997-03-27 | 1998-10-06 | Chugai Ro Co Ltd | 金属ストリップ支持装置のシール機構 |
JPH11106833A (ja) * | 1997-10-07 | 1999-04-20 | Daido Steel Co Ltd | 連続熱処理炉 |
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US6341955B1 (en) * | 1998-10-23 | 2002-01-29 | Kawasaki Steel Corporation | Sealing apparatus in continuous heat-treatment furnace and sealing method |
JP5928214B2 (ja) * | 2012-07-18 | 2016-06-01 | Jfeスチール株式会社 | 軸受装置および連続焼鈍炉 |
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CN107429309B (zh) * | 2015-04-02 | 2021-06-18 | 考克利尔维修工程 | 退火炉、用于控制在钢带上的表面反应的方法及钢带 |
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