TW201838336A - 半導體裝置及轉換器系統 - Google Patents

半導體裝置及轉換器系統 Download PDF

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Publication number
TW201838336A
TW201838336A TW106136832A TW106136832A TW201838336A TW 201838336 A TW201838336 A TW 201838336A TW 106136832 A TW106136832 A TW 106136832A TW 106136832 A TW106136832 A TW 106136832A TW 201838336 A TW201838336 A TW 201838336A
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Taiwan
Prior art keywords
igbt
resistor
gate
diode
power
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TW106136832A
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English (en)
Inventor
近藤大介
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日商瑞薩電子股份有限公司
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Publication of TW201838336A publication Critical patent/TW201838336A/zh

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F03—MACHINES OR ENGINES FOR LIQUIDS; WIND, SPRING, OR WEIGHT MOTORS; PRODUCING MECHANICAL POWER OR A REACTIVE PROPULSIVE THRUST, NOT OTHERWISE PROVIDED FOR
    • F03D—WIND MOTORS
    • F03D9/00—Adaptations of wind motors for special use; Combinations of wind motors with apparatus driven thereby; Wind motors specially adapted for installation in particular locations
    • F03D9/20—Wind motors characterised by the driven apparatus
    • F03D9/25—Wind motors characterised by the driven apparatus the apparatus being an electrical generator
    • F03D9/255—Wind motors characterised by the driven apparatus the apparatus being an electrical generator connected to electrical distribution networks; Arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0655—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
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    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
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    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
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    • H02M3/00—Conversion of dc power input into dc power output
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    • H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
    • H02M3/305—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a thyratron or thyristor type requiring extinguishing means
    • H02M3/315—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only
    • H02M3/3155—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only with automatic control of the output voltage or current
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    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
    • H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
    • H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
    • H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
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    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M5/00—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases
    • H02M5/40—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc
    • H02M5/42—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc by static converters
    • H02M5/44—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc by static converters using discharge tubes or semiconductor devices to convert the intermediate dc into ac
    • H02M5/453—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc by static converters using discharge tubes or semiconductor devices to convert the intermediate dc into ac using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M5/458—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc by static converters using discharge tubes or semiconductor devices to convert the intermediate dc into ac using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
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    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
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    • H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
    • H02P2101/00—Special adaptation of control arrangements for generators
    • H02P2101/15—Special adaptation of control arrangements for generators for wind-driven turbines
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H03K17/163—Soft switching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Abstract

本發明之課題在於謀求具備IGBT等之功率電晶體之半導體裝置之性能提高。 本發明之半導體裝置之IGBT模組110具備：並聯連接之IGBT元件SWa及SWb、連接於IGBT元件SWa之閘極端子之電阻R1a、及與電阻R1a並聯連接且以朝向IGBT元件SWa之閘極端子之方向為正向之二極體D1a。藉此，可抑制閘極振盪之產生，且可提高開關特性。

Description

半導體裝置及轉換器系統
本發明係關於一種半導體裝置及轉換器系統，例如，係關於一種具備功率電晶體之半導體裝置及轉換器系統。
在以大電力驅動馬達、或進行能量轉換等之系統中，廣泛地利用IGBT(Insulated Gate Bipolar Transistor：絕緣閘極雙極性電晶體)或功率MOSFET(Metal Oxide Semiconductor Field Effect Transistor，金屬氧化物半導體場效電晶體)等之功率電晶體(3端子放大元件)。近年來，由於如此之系統之用途日益廣泛，故以更大電力驅動負載之必要性增加。 因此，業界已知悉為了能夠進行以大電力之開關，而並聯地連接複數個功率電晶體之方法(例如，參照非專利文獻1及2)。 [先前技術文獻] [非專利文獻] [非專利文獻1] 富士電機株式會社 「Prime PACK(註冊商標)　模組並聯連接」 [online] ＜URL: https://www.fujielectric.co.jp/products/semiconductor/model/igbt/ application/box/doc/pdf/RH984b/Parallel%20connection_PP_J.pdf＞ [非專利文獻2] International Rectifier 「Application Note：AN-941 功率MOSFET之並聯連接」 [online] ＜URL：http://www.infineon.com/dgdl/AN-941J.pdf?fileld=5546d46256fb43b301574c6033177c39＞
[發明所欲解決之問題] 如上述般，伴隨著輸出之大電力化，而有功率電晶體之並聯連接數增加之傾向。然而，本發明者等發現在關聯之技術中，在並聯連接功率電晶體時，有性能劣化之虞。因此，在一實施形態中，將謀求半導體裝置之性能提高作為課題之一。 本發明之其他課題與新穎的特徵可由本說明書之記述及附圖而明確化。 [解決問題之技術手段] 根據一實施形態，半導體裝置具備：第1及第2功率電晶體、第1電阻、及第1二極體。第1及第2功率電晶體並聯連接，且第1電阻連接於第1功率電晶體之控制端子。第1二極體係與第1電阻並聯連接，且以朝向第1功率電晶體之控制端子之方向為正向者。 [發明之效果] 根據前述一實施形態，可謀求半導體裝置之性能提高。
為了說明之明確化，而將以下之記載及圖式適當省略及簡略化。又，作為進行各種處理之功能區塊而記載於圖式之各要素，就硬體而言可由CPU、記憶體、及其他電路而構成，就軟體而言係藉由載入於記憶體內之程式等而實現。因此，熟悉此項技術者應理解此等功能區塊可只由硬體、只由軟體或由該等之組合以各種形式而實現，而並非限定於其某一者。又，在各圖式中，對於相同之要素賦予相同之符號，根據需要省略其重複說明。 (實施形態1) 以下，參照圖式針對實施形態1進行說明。 ＜實施形態1之系統之構成＞ 作為實施形態1之系統，在此處針對風力發電系統進行說明。又，風力發電系統係使用IGBT等之功率器件之系統(轉換器系統)之一例，亦可為產業用馬達驅動系統、或其他能量電力轉換系統等。 圖1顯示本實施形態之風力發電系統之構成例。如圖1所示般，本實施形態之風力發電系統1具備：風車101、AC輸入部(AC產生部：AC Generator，AC發電機)102、整流部103、升壓部104、轉換器100、及AC輸出部105。另外，還具備：驅動模組112，其驅動構成轉換器100之IGBT電路111a及111b；及轉換器控制部(轉換器控制微電腦)113。 AC輸入部102係隨著風車101之旋轉而產生AC電力之發電機。例如，AC輸入部102產生3相AC電力且供給至整流部103。整流部(整流電路)103係整流AC電力且轉換為DC電力之AC/DC轉換部。整流部103將AC輸入部102產生之3相AC電力轉換為DC電力。整流部103具備串聯連接之二極體(例如FRD：Fast Recovery Diode，快速回復二極體)D 101及D 102，二極體D 101及D 102對係複數狀並聯地連接。在此例中，為了對3相AC電力進行3相全波整流，而並聯連接有3個二極體D 101及D 102對，且在各二極體D 101及D 102之中間節點輸入AC電力。 升壓部(升壓斬波電路)104使整流部103產生之DC電力升壓。升壓部104具備：電感L 101、二極體D 103、電容C 101、及IGBT電路106。在整流部103(二極體D 101之陰極側)與轉換器100(高端側)之間，串聯地連接有電感L 101、二極體D 103。在電感L 101與二極體D 103(陽極側)之間，與二極體D 101及D 102並聯地連接有IGBT電路106。再者，在二極體D 103(陰極側)與轉換器100之間，與IGBT電路106並聯地連接有電容C 101。藉由利用升壓用之控制電路(未圖示)控制IGBT電路106之導通/關斷而進行升壓。 轉換器100係根據轉換器控制部113之控制而將所升壓之DC電力轉換為AC電力之DC/AC轉換部。在轉換器100中，IGBT電路(高端側開關)111a與IGBT電路(低端側開關)111b構成IGBT模組110，且IGBT模組110係並聯地連接有複數組。在此例中，為了產生3相AC電力，而並聯連接有3組IGBT模組110，自各IGBT電路111a及111b之中間節點輸出AC電力。如後述般，IGBT電路111a及111b分別係並聯連接複數個IGBT元件而構成，例如，在大電力用途之轉換器中，並聯連接有2～12個IGBT元件。 為了以IGBT模組110單位進行控制，而就每一IGBT模組具備驅動模組112。驅動模組112藉由根據轉換器控制部113之指示，控制IGBT電路111a及111b之導通/關斷而產生AC電力。例如，IGBT電路111(111a與111b之任一者或二者)與驅動模組112構成驅動系統(轉換器系統)120。藉由將本實施形態之IGBT模組應用於轉換器系統中，而能夠進行高速動作，從而可高效率地轉換電力。 AC輸出部105係AC電力之輸出對象之負載，係電力系統或馬達等。AC輸出部105具備電感L 102與AC負載電路107，經由電感L 102將3相AC電力供給至AC負載電路107。 ＜實施形態1之IGBT之構成＞ 其次，針對本實施形態之轉換器100之IGBT電路111所包含之IGBT元件之構成例進行說明。 圖2顯示作為一例之IGBT元件SW1之概略剖面，圖3顯示其等效電路之構成。圖2之例係具有一般之浮動層之IGBT構造，由於溝渠電極係與閘極-閘極並排形成，故被稱為GG構造。根據該構造，可對應大電力化。 如圖2所示般，GG構造之IGBT元件SW1在集電極(未圖示)之上形成有N-漂移層201。在N-漂移層201之上以特定間隔形成有P型浮動層202，在P型浮動層202之間形成有N型孔障壁層203。在N型孔障壁層203之上形成有P型通道區域205(接觸層)、N型發射極區域(發射極層)206。 在夾著N型發射極區域206及P型通道區域205之兩側，分別形成有閘極電極(溝渠閘極)204。閘極電極204形成於自N型發射極區域206及P型通道區域205到達N型孔障壁層203與P型浮動層202之間的溝渠內。以覆蓋P型浮動層202、閘極電極204、N型發射極區域206之方式形成有絕緣膜207。在自絕緣膜207到達N型發射極區域206、P型通道區域205(接觸層)之溝渠內，形成有發射極電極(未圖示)。 在如圖2之GG構造之IGBT元件SW1中，產生如圖3所示之寄生電容。在IGBT元件SW1中，由經由各P型浮動層202之浮動電容Cfpc及Cgfp、與經由N型孔障壁層203之閘極電容Cgd形成集電極-閘極間電容。 圖4顯示作為又一例之IGBT元件SW2之概略剖面，圖5顯示其等效電路之構成。圖4之例係降低經由浮動層之電容成分之IGBT構造，由於溝渠電極以發射極-閘極-發射極並排之方式形成，故被稱為EGE構造。根據該構造，可對應大電力化及高速化。 如圖4所示般，EGE構造之IGBT元件SW2與圖2之IGBT元件SW1相比，在溝渠電極之構成上有所不同。亦即，在P型通道區域205(接觸層)上之中央形成有N型發射極區域(發射極層)206，在P型通道區域205及N型發射極區域206之中央形成有閘極電極(溝渠閘極)204。閘極電極204形成於自N型發射極區域206及P型通道區域205到達N型孔障壁層203之溝渠內。在夾著P型通道區域205之兩側，分別形成有發射極電極(溝渠發射極)208。發射極電極208形成於自P型通道區域205到達N型孔障壁層203與P型浮動層202之間之溝渠內。 在如圖4般之EGE構造之IGBT元件SW2中，產生如圖5之寄生電容。在IGBT元件SW2中，由於經由P型浮動層202之浮動電容Cfpc及Cgfp連接於集電極-發射極間，故集電極-閘極間電容僅為經由N型孔障壁層203之閘極電容Cgd。因此，在EGE構造中，與GG構造相比可大幅度降低回饋電容(Cres)，而能夠進行高速開關。 ＜研究例之IGBT模組之構成＞ 首先，針對本實施形態應用前之研究例之IGBT模組進行說明。圖6係顯示包含研究例之IGBT模組之驅動系統之構成。 如圖6所示般，研究例之IGBT模組910具備複數個IGBT安裝部(安裝基板)911。複數個IGBT安裝部911相當於圖1之IGBT電路111(111a或111b)。在此例中，2個IGBT安裝部911a及911b係並聯連接。 IGBT安裝部911a及911b為相同之構成，分別具備：IGBT元件SW(SWa、SWb)、二極體FD(FDa、FDb：續流二極體(Free Wheeling Diode，飛輪二極體))、及電阻R1(R1a、R1b)。在IGBT元件SW之集電極-發射極間連接有二極體FD，在IGBT元件SW之閘極連接有電阻R1(阻尼電阻)。複數個IGBT元件SW之閘極經由電阻R1而共通連接，集電極亦共通連接。又，複數個IGBT元件SW之發射極亦共通連接(未圖示)。在閘極之共通節點連接有驅動模組112，自驅動模組112供給控制電壓(閘極電壓)。在集電極之共通節點連接有AC負載電路107，在此例中，連接有電容C 102。又，可行的是，將閘極稱為控制端子，將集電極及發射極(若為MOSFET則是源極及汲極)之任一者稱為第1端子或第2端子。 在如此之構成中，存在若負載短路(接地)則產生閘極振盪之問題。圖7顯示負載短路時之IGBT元件SW之各信號波形。如圖7所示般，若負載短路，則閘極-發射極電壓VGE及集電極-發射極電壓VCE之變動雖然為小，但集電極電流Ic上升，而持續流動有飽和電流。而且，若因溫度特性等之影響而滿足一定之振盪條件(共振條件)，則閘極-發射極電壓VGE形成振盪狀態(閘極振盪)。 該振盪起因於在負載短路時由於IGBT之並聯連接而形成有共振迴路。圖8顯示該共振迴路之寄生成分，圖9顯示共振迴路之等效電路。如圖8所示般，在IGBT安裝部911a產生有閘極電容(集電極-閘極)電容C0a，在IGBT安裝部911b產生有閘極電容(集電極-閘極)電容C0b，在IGBT安裝部911a及911b之集電極間產生有寄生電感L0a，在IGBT安裝部911a及911b之閘極間產生有寄生電感L0b。於是，如圖9所示般，在包含電阻R1a、閘極電容C0a、寄生電感L0a、閘極電容C0b、電阻R1b、寄生電感L0b之共振迴路內流動有再生電流。因此，在共振迴路內之寄生電感成分為大時，或各元件之回饋電容(閘極電容)為小時，存在有在負載短路中產生如圖7之振盪之問題。 近年來，由於伴隨著輸出大電力化，而有IGBT之並聯連接數增加之傾向，故寄生電感成分有增加傾向。又，為了降低開關損失而追求回饋電容之降低。因此，針對抑制雜訊·振盪之器件/模組之最佳化設計成為課題。 例如，在上述之EGE構造之IGBT元件SW2之情形下，雖然相對於GG構造之IGBT元件SW1能夠大幅度地降低開關損失，但另一方面由於回饋電容為極端小，而在並聯連接時產生振盪。為了進行此振盪對策，而考量較高地設定共振迴路內之閘極電阻(R1a及R1b)之電阻值之方法。然而，若增大閘極電阻之電阻值，則無法進行高速開關。因此，在本實施形態中，藉由採用如下述之IGBT模組構造，而能夠抑制對開關特性之影響，且能夠防止閘極振盪之產生。 ＜實施形態1之IGBT模組之構成＞ 圖10顯示本實施形態之IGBT模組之構成。如圖10所示般，本實施形態之IGBT模組110具備複數個IGBT安裝部(安裝基板)121。複數個IGBT安裝部121相當於圖1之IGBT電路111(111b或111a)。 IGBT安裝部121(121a、121b)除了圖6之研究例之構成以外，還具備二極體D1(D1a、D1b)。二極體D1(第1及第2二極體)係與連接於IGBT元件SW之閘極之電阻R1(第1及第2電阻)並聯連接。二極體D1之陽極連接於驅動模組112側(共通節點側)，陰極連接於IGBT元件SW之閘極側，朝向閘極之方向成為正向。二極體D1及電阻R1可形成於IGBT安裝部121(半導體晶片)之內部，亦可為外接零件。又，二極體可使用肖特基勢壘二極體(SBD)等。另外，二極體D1以外之構成係與圖6相同。 圖11顯示圖10之構成之共振迴路之寄生成分，圖12顯示該共振迴路之等效電路。如圖11所示般，與圖8相同地，在IGBT安裝部121a產生有閘極電容C0a，在IGBT安裝部121b產生有閘極電容C0b，在IGBT安裝部121a及121b之集電極間產生有寄生電感L0a，在IGBT安裝部121a及121b之閘極間產生有寄生電感L0b。於是，如圖12所示般，形成包含並聯連接之電阻R1a及二極體D1a、閘極電容C0a、寄生電感L0a、閘極電容C0b、並聯連接之電阻R1b及二極體D1b、寄生電感L0b之共振迴路。 雖然共振迴路內之再生電流流經二極體D1a，但由於二極體D1b為反方向故電流路徑被遮斷，而企圖流經電阻R1b。因此，藉由使電阻R1b(阻尼電阻)高電阻化，而可抑制振盪。又，由於二極體D1(D1a及D1b)之閘極方向為正向，故可確保接通時之閘極電荷路徑之阻抗為較低，而可防止開關損失之增加，且能夠進行高速動作。 又，在IGBT為2個並聯之情形下，由於共振迴路為一個，故可採用如圖13所示般，在至少一個IGBT元件SW之閘極插入二極體D1及電阻R1之並聯電路之構成。在IGBT為3個以上並聯之情形下，由於共振迴路變為複數個，故較佳者係在全部之IGBT元件SW之閘極插入二極體D1及電阻R1之並聯電路。另外，不限定於IGBT元件，亦可為功率MOSFET等之功率電晶體(閘極驅動之3端子放大元件)。亦即，如圖13所示般，IGBT模組(半導體裝置)110可具備並聯連接之IGBT元件SWb(第1功率電晶體)與IGBT元件SWa(第2功率電晶體)、連接於IGBT元件SWb之閘極(控制端子)之電阻R1(第1電阻)、與電阻R1並聯連接且以朝向閘極之方向為正向之二極體D1(第1二極體)。 如以上所述般，在本實施形態中，在並聯連接IGBT之驅動系統中，在各IGBT之閘極輸入部插入並聯連接之正向二極體及電阻。藉此，可抑制開關損失之增加且抑制振盪。 如上述研究例所示般，作為振盪對策提高共振迴路內之電阻值而提高阻尼效果雖然有效，但若增大個別閘極電阻值則無法最大限度地發揮器件所具有之高速開關之特長。存在振盪抑制耐量與開關特性之折衷之問題。因此，在研究例中，即便使用如EGE構造之高速IGBT仍不能充分地發揮其優點，但藉由使用應用本實施形態之驅動系統，即便在並聯連接用途上仍能夠發揮高速開關之特長。再者，亦能夠增加器件/模組之最佳化設計之自由度。 (實施形態2) 在本實施形態中，針對實施形態1之IGBT模組之安裝例進行說明。 ＜參考例＞ 圖14顯示應用實施形態前之參考例之IGBT模組之構成，圖15顯示其安裝例。此參考例與上述研究例相同，係在IGBT之閘極僅插入電阻之例。 如圖14所示般，參考例之IGBT模組920具備IGBT安裝部921a及921b。IGBT安裝部921a及921b分別具備IGBT元件SWa及SWb、二極體FDa及FDb，且電阻R1a及R1b外接於閘極端子。 如圖15所示般，在參考例之IGBT模組920之安裝例中，具備：閘極電位區域(線路圖形：第1安裝區域)301a及301b、集電極電位區域(線路圖形：第2安裝區域)302、發射極電位區域(線路圖形)303。各區域係用於安裝各元件之島，係以銅板形成之基座板。在此例中，IGBT元件(IGBT晶片)SWa及SWb在背面側(未圖示)形成有集電極端子(背面端子)，在表面側形成有發射極端子(墊)TE及閘極端子(墊)TG(表面端子)。 在集電極電位區域302安裝有IGBT元件(IGBT晶片)SWa及SWb，且在集電極電位區域302電性連接有IGBT元件SWa及SWb之背面端子(集電極端子)。在集電極電位區域302安裝有二極體(二極體晶片)FDa及FDb，且在集電極電位區域302電性連接有二極體FDa及FDb之背面端子(陰極端子)。 電阻R1a及R1b係面安裝類型之晶片電阻。在閘極電位區域301a安裝有電阻R1a，且在閘極電位區域301a電性連接有電阻R1a之背面端子。在閘極電位區域301b安裝有電阻R1b，且在閘極電位區域301b電性連接有電阻R1b之背面端子。 IGBT元件SWa及SWb之表面之複數個發射極端子TE分別藉由導線配線經由二極體FDa及FDb之表面端子(陽極端子)電性連接於發射極電位區域303。IGBT元件SWa及SWb之表面之閘極端子TG分別藉由導線配線電性連接於電阻R1a及R1b之表面端子。閘極電位區域301a及301b藉由導線配線而電性連接，例如，閘極電位區域301b與驅動模組112電性連接而被輸入閘極信號。 ＜安裝例1＞ 圖16顯示實現實施形態1之IGBT模組之構成例，圖17顯示其安裝例1。 如圖16所示般，本實施形態之IGBT模組110具備IGBT安裝部121a及121b。IGBT安裝部121a及121b係與參考例之IGBT安裝部921a及921b為相同之構成，電阻R1a及二極體D1a、電阻R1b及二極體D1b外接於閘極端子。 如圖17所示般，在本實施形態之IGBT模組110之安裝例1中，在閘極電位區域301a安裝有二極體D1a，且二極體D1a之陽極端子電性連接於閘極電位區域301a，二極體D1a之陰極端子電性連接於電阻R1a(面安裝類型之晶片電阻)之表面端子。相同地，在閘極電位區域301b安裝有二極體D1b，且二極體D1b之陽極端子電性連接於閘極電位區域301b，二極體D1b之陰極端子電性連接於電阻R1b之表面端子。其他係與參考例相同。 又，圖18顯示又一安裝例。圖18係將導線型電阻用作電阻R1a及R1b之例。該情形下，電阻連接用之區域(線路圖形)304a及304b、二極體連接用之區域(線路圖形)305a及305b成為必要。亦即，電阻R1a之一端連接於區域304a，另一端連接於閘極電位區域301a。二極體D1a之陽極端子連接於閘極電位區域301a，二極體D1a之陰極端子電性連接於區域304a。相同地，電阻R1b之一端連接於區域304b，另一端連接於閘極電位區域301b。二極體D1b之陽極端子連接於閘極電位區域301b，二極體D1b之陰極端子電性連接於區域304b。 一般而言，閘極節點基板由外接電阻之有無或規格而決定其形狀。在使用面安裝類型之電阻之情形下，能夠實現如圖15所示之島(區域)構成，而另一方面，在使用導線類型之電阻之情形下，與閘極墊連接之獨立之島乃成為必要。 因此，在使用導線類型電阻實現本實施形態之情形下，如圖18所示般必須進行基板變更、配線追加，而在成本之面上不利會變大。另一方面，在使用面安裝類型之電阻之情形下，如圖17所示般，無須自圖15之構成進行基板佈局之變更，藉由追加1個(就每一IGBT)二極體而能夠實現。藉此可保持基板之泛用性，且可將構件成本∙安裝步驟之增加抑制為最小限度。 另外，如圖18所示般，若自閘極墊使用2支導線電阻∙導線二極體亦能夠實現相同之構成，但有可能受到墊面積上之制約。 ＜安裝例2＞ 圖19顯示實現實施形態1之IGBT模組之又一構成例，圖20顯示其安裝例2。 如圖19所示般，本實施形態之IGBT模組110具備IGBT安裝部121a及121b。IGBT安裝部121a及121b分別具備：IGBT元件SWa及SWb、二極體FDa及FDb、電阻R1a及R1b、以及二極體D1a及D1b。 如圖20所示般，在本實施形態之IGBT模組110之安裝例2中，由於在IGBT安裝部121a及121b內形成有電阻R1a及R1b、二極體D1a及D1b，故僅將IGBT元件SWa及SWb之閘極端子TG分別連接於閘極電位區域301a及301b即可。其他係與圖17相同。 如此般，安裝例2係將閘極電阻與並聯二極體內置於IGBT晶片內之例。藉此，可在無須將外接零件構成變更為應用實施形態前之下，實現本實施形態。 ＜安裝例3＞ 圖21顯示實現實施形態1之IGBT模組之又一構成例，圖22顯示其安裝例3。 如圖21所示般，本實施形態之IGBT模組110具備IGBT安裝部121a及121b。IGBT安裝部121a及121b分別具備IGBT元件SWa及SWb、二極體FDa及FDb、及電阻R1a及R1b，且二極體D1a及D1b外接於閘極端子。 如圖22所示般，在本實施形態之IGBT模組110之安裝例3中，由於在IGBT安裝部121a及121b內形成有電阻R1a及R1b，故作為IGBT元件SWa及SWb之表面端子，具備電阻R1兩端之閘極端子TG1及TG2。另外，IGBT模組110具備二極體連接用之區域(線路圖形：第3安裝區域)306a及306b。 在IGBT安裝部121a中，閘極端子TG1連接於閘極電位區域301a，閘極端子TG2連接於區域306a，二極體D1a連接於區域306a與閘極電位區域301a之間。在IGBT安裝部121b中，閘極端子TG1連接於閘極電位區域301b，閘極端子TG2連接於區域306b，二極體D1b連接於區域306b與閘極電位區域301b之間。其他係與圖17相同。 如此般，安裝例3係在IGBT晶片內僅內置閘極電阻，並設置電阻兩端之墊且將並聯二極體連接於該墊之例。因此，能夠以1個(就每一GBT)外接二極體而實現本實施形態。 以上，基於實施形態具體地說明瞭本發明者所完成之發明，但本發明並非限定於前述實施形態，應瞭解在不脫離本發明之要旨之範圍內可進行各種變更。
1‧‧‧風力發電系統
100‧‧‧轉換器
101‧‧‧風車
102‧‧‧AC輸入部(AC產生部，AC發電機)
103‧‧‧整流部(整流電路)
104‧‧‧升壓部(升壓斬波電路)
105‧‧‧AC輸出部
106‧‧‧IGBT電路
107‧‧‧AC負載電路
110‧‧‧IGBT模組(半導體裝置)
111‧‧‧IGBT電路
111a‧‧‧IGBT電路
111b‧‧‧IGBT電路
112‧‧‧驅動模組
113‧‧‧轉換器控制部(轉換器控制微電腦)
120‧‧‧驅動系統(轉換器系統)
121a‧‧‧IGBT安裝部
121b‧‧‧IGBT安裝部
201‧‧‧N-漂移層
202‧‧‧P型浮動層
203‧‧‧N型孔障壁層
204‧‧‧閘極電極(溝渠閘極)
205‧‧‧P型通道區域 (接觸層)
206‧‧‧N型發射極區域(發射極層)
207‧‧‧絕緣膜
208‧‧‧發射極電極(溝渠發射極)
301a‧‧‧閘極電位區域(線路圖形：第1安裝區域)
301b‧‧‧閘極電位區域(線路圖形：第1安裝區域)
302‧‧‧集電極電位區域(線路圖形：第2安裝區域)
303‧‧‧發射極電位區域(線路圖形)
304a‧‧‧區域(線路圖形)
304b‧‧‧區域(線路圖形)
305a‧‧‧區域(線路圖形)
305b‧‧‧區域(線路圖形)
306a‧‧‧區域(線路圖形：第3安裝區域)
306b‧‧‧區域(線路圖形：第3安裝區域)
910‧‧‧IGBT模組
911a‧‧‧IGBT安裝部
911b‧‧‧IGBT安裝部
920‧‧‧IGBT模組
921a‧‧‧IGBT安裝部
921b‧‧‧IGBT安裝部
C0a‧‧‧閘極電容(集電極-閘極)電容
C0b‧‧‧閘極電容(集電極-閘極)電容
C 101‧‧‧電容
C 102‧‧‧電容
Cfpc‧‧‧浮動電容
Cgd‧‧‧閘極電容
Cgfp‧‧‧浮動電容
D1‧‧‧二極體(第1及第2二極體)
D1a‧‧‧二極體
D1b‧‧‧二極體
D 101‧‧‧二極體
D 102‧‧‧二極體
D 103‧‧‧二極體
FDa‧‧‧二極體(續流二極體) (二極體晶片)
FDb‧‧‧二極體(續流二極體) (二極體晶片)
Ic‧‧‧集電極電流
L0a‧‧‧寄生電感
L0b‧‧‧寄生電感
L 101‧‧‧電感
L 102‧‧‧電感
R1‧‧‧電阻(阻尼電阻)(第1及第2電阻)(晶片電阻)
R1a‧‧‧電阻(閘極電阻)
R1b‧‧‧電阻(閘極電阻)
SW1‧‧‧IGBT元件
SW2‧‧‧IGBT元件
SWa‧‧‧IGBT元件(第2功率電晶體) (IGBT晶片)
SWb‧‧‧IGBT元件(第1功率電晶體) (IGBT晶片)
TE‧‧‧發射極端子(墊)
TG‧‧‧閘極端子(墊)
TG1‧‧‧閘極端子
TG2‧‧‧閘極端子
VCE‧‧‧集電極-發射極電壓
VGE‧‧‧閘極-發射極電壓
圖1係顯示實施形態1之風力發電系統之構成例之構成圖。 圖2係顯示實施形態1之IGBT元件之一例之概略剖視圖。 圖3係顯示實施形態1之IGBT元件之等效電路之一例之電路圖。 圖4係顯示實施形態1之IGBT元件之又一例之概略剖視圖。 圖5係顯示實施形態1之IGBT元件之等效電路之又一例之電路圖。 圖6係顯示包含研究例之IGBT模組之驅動系統之構成例之構成圖。 圖7係顯示研究例之IGBT模組之負載短路時之信號之波形圖。 圖8係包含研究例之IGBT模組之共振迴路之等效電路之構成圖。 圖9係顯示研究例之IGBT模組之共振迴路之等效電路之構成之電路圖。 圖10係顯示包含實施形態1之IGBT模組之驅動系統之構成例之構成圖。 圖11係包含實施形態1之IGBT模組之共振迴路之等效電路之構成圖。 圖12係顯示實施形態1之IGBT模組之共振迴路之等效電路之構成之電路圖。 圖13係顯示實施形態1之IGBT模組之又一構成例之構成圖。 圖14係與參考例之IGBT模組之安裝例對應之構成圖。 圖15係顯示參考例之IGBT模組之安裝例之概略平面圖。 圖16係與實施形態2之IGBT模組之安裝例1對應之構成圖。 圖17係顯示實施形態2之IGBT模組之安裝例1之概略平面圖。 圖18係顯示實施形態2之IGBT模組之又一安裝例之概略平面圖。 圖19係與實施形態2之IGBT模組之安裝例2對應之構成圖。 圖20係顯示實施形態2之IGBT模組之安裝例2之概略平面圖。 圖21係與實施形態2之IGBT模組之安裝例3對應之構成圖。 圖22係顯示實施形態2之IGBT模組之安裝例3之概略平面圖。

Claims (11)

  1. 一種半導體裝置，其具備： 並聯連接之第1及第2功率電晶體， 連接於前述第1功率電晶體之控制端子之第1電阻，及 與前述第1電阻並聯連接且以朝向前述第1功率電晶體之控制端子之方向為正向之第1二極體。
  2. 如請求項1之半導體裝置，其中前述第1及第2功率電晶體之第1端子或第2端子係共通連接，且前述第1及第2功率電晶體之控制端子經由前述第1電阻及前述第1二極體而共通連接。
  3. 如請求項1之半導體裝置，其中具備： 連接於前述第2功率電晶體之控制端子之第2電阻，及 與前述第2電阻並聯連接且以朝向前述第2功率電晶體之控制端子之方向為正向之第2二極體。
  4. 如請求項1之半導體裝置，其中前述第1及第2功率電晶體係IGBT元件。
  5. 如請求項4之半導體裝置，其中前述IGBT元件係夾著通道區域之兩側而配置有第1及第2溝渠閘極之閘極-閘極構造。
  6. 如請求項4之半導體裝置，其中前述IGBT元件係夾著通道區域及溝渠閘極之兩側而配置有第1及第2溝渠發射極之發射極-閘極-發射極構造。
  7. 如請求項1之半導體裝置，其中具備： 第1安裝區域，其供安裝形成有前述第1功率電晶體之半導體晶片；及 第2安裝區域，其供安裝與前述第1功率電晶體連接之前述第1電阻及前述第1二極體，且被供給用於前述控制端子之控制信號。
  8. 如請求項7之半導體裝置，其中前述第1電阻係面安裝型之晶片電阻。
  9. 如請求項1之半導體裝置，其中具備：第1安裝區域，其供安裝形成有前述第1功率電晶體、前述第1電阻及前述第1二極體之半導體晶片；及 第2安裝區域，其與前述第1電阻及前述第1二極體連接而被供給用於前述控制端子之控制信號。
  10. 如請求項1之半導體裝置，其中具備： 第1安裝區域，其供安裝形成有前述第1功率電晶體及前述第1電阻之半導體晶片； 第2安裝區域，其與前述第1電阻連接且被供給用於前述控制端子之控制信號；及 第3安裝區域，其與前述第1功率電晶體及前述第1電阻連接，且供安裝前述第1二極體。
  11. 一種轉換器系統，其具備： 轉換器電路，該轉換器電路具備串聯連接之第1及第2功率電晶體電路；及 驅動電路，其驅動前述第1及第2功率電晶體電路；且 前述第1及第2功率電晶體電路具備： 並聯連接之複數個功率電晶體， 連接於前述複數個功率電晶體之各者之控制端子之複數個電阻，及 與前述複數個電阻之各者並聯連接，且以朝向前述複數個功率電晶體之各者之控制端子之方向為正向之複數個二極體。
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