CN108336910A - 半导体装置以及逆变器系统 - Google Patents

半导体装置以及逆变器系统 Download PDF

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Publication number
CN108336910A
CN108336910A CN201711402655.1A CN201711402655A CN108336910A CN 108336910 A CN108336910 A CN 108336910A CN 201711402655 A CN201711402655 A CN 201711402655A CN 108336910 A CN108336910 A CN 108336910A
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China
Prior art keywords
power transistor
resistor
diode
igbt
installing zone
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CN201711402655.1A
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English (en)
Inventor
近藤大介
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Renesas Electronics Corp
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Renesas Electronics Corp
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Publication of CN108336910A publication Critical patent/CN108336910A/zh
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F03—MACHINES OR ENGINES FOR LIQUIDS; WIND, SPRING, OR WEIGHT MOTORS; PRODUCING MECHANICAL POWER OR A REACTIVE PROPULSIVE THRUST, NOT OTHERWISE PROVIDED FOR
    • F03D—WIND MOTORS
    • F03D9/00—Adaptations of wind motors for special use; Combinations of wind motors with apparatus driven thereby; Wind motors specially adapted for installation in particular locations
    • F03D9/20—Wind motors characterised by the driven apparatus
    • F03D9/25—Wind motors characterised by the driven apparatus the apparatus being an electrical generator
    • F03D9/255—Wind motors characterised by the driven apparatus the apparatus being an electrical generator connected to electrical distribution networks; Arrangements therefor
    • H—ELECTRICITY
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    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0655—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
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    • H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
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    • H02M5/44—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc by static converters using discharge tubes or semiconductor devices to convert the intermediate dc into ac
    • H02M5/453—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc by static converters using discharge tubes or semiconductor devices to convert the intermediate dc into ac using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M5/458—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc by static converters using discharge tubes or semiconductor devices to convert the intermediate dc into ac using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
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    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
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    • H02M1/00—Details of apparatus for conversion
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    • H02M1/0038—Circuits or arrangements for suppressing, e.g. by masking incorrect turn-on or turn-off signals, e.g. due to current spikes in current mode control
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
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    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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Abstract

本发明涉及一种半导体装置以及逆变器系统。本公开试图改善包括诸如IGBT的功率晶体管的半导体装置的性能。在半导体装置中，IGBT模块(110)包括彼此并联连接的IGBT元件(SWa、SWb)，连接至IGBT元件(SWa)的栅极端子的电阻器(R1a)，以及并联连接至电阻器(R1a)的二极管(D1a)。在二极管(D1a)中，朝向IGBT元件(SWa)的栅极端子的方向为正向。借助这种配置，能避免栅极振荡并改善开关特性。

Description

半导体装置以及逆变器系统
相关申请的交叉引用
本申请基于并要求2016年12月22日提交的日本专利申请No.2016-249055的优先权，通过引用将其公开整体并入本文。
技术领域
本公开涉及一种半导体装置以及逆变器系统。例如，本公开涉及一种半导体装置以及包括功率晶体管的逆变器系统。
背景技术
在驱动具有高功率电机或执行能量转换等的系统中，广泛采用诸如IGBT(绝缘栅双极晶体管)或功率MOSFET(金属氧化物半导体场效应晶体管)的功率晶体管(三端子放大元件)。因为近来已经扩展了这种系统的应用，因此用于驱动具有更高功率的负载的需求增加了。
在这点上，为了能以高功率进行切换，用于并联多个功率晶体管的方法是公知的(例如富士电机有限公司“PrimePack(注册商标)模块并联”，[在线]，<URL:https://www.fujielectric.co.jp/products/semiconductor/model/igbt/application/box/doc/pdf/RH984b/Parallel％20connection_PP_J.pdf>以及国际整流器“操作说明”：AN-941功率MOSFET并联，[在线]，<URL；http://www.infineon.com/dgdl/AN-941J.pdf？fileId＝5546d46256fb43b301574c6033177c39>)。
发明内容
如上所述，随着输入功率的增加，功率晶体管的并联数量也在增加。但是，本发明人已经发现相关的技术中存在的问题，即当功率晶体管并联连接时，性能会退化。因此，本公开的方面的目的是改善半导体装置的性能。
现有技术的其他问题以及本公开的新颖特征将从说明书以及附图的下述说明变得显而易见。
根据一个方面，半导体装置包括第一和第二功率晶体管、第一电阻器以及第一二极管。第一和第二功率晶体管彼此并联连接。第一电阻器连接至第一功率晶体管的控制端子。第一二极管并联连接至第一电阻器。在第一二极管中，朝向第一功率晶体管的控制端子的方向是正向。
根据上述方面，能改善半导体装置的性能。
附图说明
结合附图从某些实施例的下述说明将使上述和其他方面，优点和特征更加显而易见，其中：
图1是示出根据第一实施例的风力发电系统的配置示例的配置图；
图2是示出根据第一实施例的IGBT元件的示例的截面示意图；
图3是示出根据第一实施例的IGBT元件的等效电路的示例的电路图；
图4是示出根据第一实施例的IGBT元件的另一示例的截面示意图；
图5是示出根据第一实施例的IGBT元件的等效电路的另一示例的电路图；
图6是示出根据研究示例的包括IGBT模块的驱动系统的配置示例的配置图；
图7是示出当研究示例的IGBT模块中的负载被短路时的信号的波形图；
图8是包括研究示例的IGBT模块中的共振回路的等效电路的配置图；
图9是示出研究示例的IGBT模块中的共振回路的等效电路的配置的电路图；
图10是示出根据第一实施例的包括IGBT模块的驱动系统的配置示例的配置图；
图11是包括根据第一实施例的IGBT模块中的共振回路的等效电路的配置的配置图；
图12是示出根据第一实施例的IGBT模块中的共振回路的等效电路的配置的电路图；
图13是示出根据第一实施例的IGBT模块的另一配置示例的配置图；
图14是对应于参考示例的IGBT模块的实施示例的配置图；
图15是对应于参考示例的IGBT模块的实施示例的平面示意图；
图16是对应于根据第二实施例的IGBT模块的实施示例1的配置图；
图17是对应于根据第二实施例的IGBT模块的实施示例1的平面示意图；
图18是对应于根据第二实施例的IGBT模块的另一实施示例的平面示意图；
图19是对应于根据第二实施例的IGBT模块的实施示例2的配置图；
图20是对应于根据第二实施例的IGBT模块的实施示例2的平面示意图；
图21是对应于根据第二实施例的IGBT模块的实施示例3的配置图；以及
图22是对应于根据第二实施例的IGBT模块的实施示例3的平面示意图。
具体实施方式
为了说明的清楚，可适当省略或简化以下说明和附图。而且，作为执行各种处理的功能块的附图中所示的各个元件可由CPU(中央处理单元)，存储器以及硬件中的其他电路形成且可通过存储器中以软件形式加载的程序执行。本领域技术人员因此将了解在没有任何限制的情况下，这些功能块可仅通过硬件，仅通过软件或其组合以各种方式实现。所有附图中，相同部件由相同参考符号表示且将适当省略重复说明。
第一实施例
以下将参考附图说明第一实施例。
<第一实施例的系统配置>
作为根据第一实施例的系统，将在下文说明风力发电系统。注意到风力发电系统是采用诸如IGBT的功率设备的系统(逆变器系统)的示例。该系统可以是工业电机驱动系统，另一能量转换系统等等。
图1示出根据本实施例的风力发电系统的配置示例。如图1中所示，根据本实施例的风力发电系统1包括风轮机101、AC输入单元(AC发电机)102、整流器103、升压器104、逆变器100以及AC输出单元105。风力发电系统1还包括驱动器模块112以及逆变器控制单元(逆变器控制微计算机)113。驱动器模块112驱动IGBT电路111a和111b。驱动器模块112和逆变器控制单元113构成逆变器100。
AC输入单元102是根据风轮机101的旋转产生AC功率的发电机。例如，AC输入单元102产生三相AC功率并将其提供给整流器103。整流器(整流电路)103是对AC功率进行整流并将其转换成DC功率的AC/DC转换器。整流器103将AC输入单元102产生的三相AC功率转换成DC功率。整流器103包括串联连接的二极管(例如FRD：快速复位二极管)D101和D102，多对二极管D101和D102并联连接。在本示例中，三对二极管D101和D102并联连接以便对三相AC功率执行三相全波整流。AC功率输入至各对二极管D101和D102之间的中间节点。
升压器(升压斩波电路)104对整流器103产生的DC功率升压。升压器104包括电感器L101，二极管D103，电容器C101以及IGBT电路106。电感器L101和二极管D103串联连接在整流器103(二极管D101的阴极侧)以及逆变器100(高压侧)之间。IGBT电路106并联连接至电感器L101以及二极管D103(阳极侧)之间的二极管D101和D102。而且，电容器C101并联连接至二极管D103(阴极侧)和逆变器100之间的IGBT电路106。通过用于升压的控制电路(未示出)，通过控制IGBT电路106的开/关而执行升压。
逆变器100是在逆变器控制单元113的控制下将升压的DC功率转换成AC功率的DC/AC转换器。在逆变器100中，IGBT电路(高压侧开关)111a以及IGBT电路(低压侧开关)111b构成IGBT模块110。多个IGBT模块110并联连接。在本示例中，为了产生三相AC功率，三个IGBT模块110并联连接。AC功率从各对IGBT电路111a和111b之间的中间节点输出。如下所述，各个IGBT电路111a和111b由多个并联连接的IGBT元件组成。例如，在用于高功率应用的逆变器中，并联连接2至12个IGBT元件。
为各个IGBT模块提供驱动器模块112，因为IGBT模块110基于每个IGBT模块而被控制。驱动器模块112根据来自逆变器控制单元113的指令，通过控制IGBT电路111a和111b的开/关而产生AC功率。例如，IGBT电路111(111a和111b中一者或两者)以及驱动器模块112组成驱动系统(逆变器系统)120。通过将根据本实施例的IGBT模块应用至逆变器系统，可以高速执行操作，且因此可有效转换功率。
AC输出单元105是AC功率输出目的地的负载。AC输出单元105是电源系统，电机等。AC输出单元105包括电感器L102和AC负载电路107。三相AC功率经由电感器L102提供至AC负载电路107。
<第一实施例的IGBT的配置>
以下将说明根据本实施例的逆变器100的IGBT电路111中包括的IGBT元件的配置示例。
图2示出作为示例的IGBT元件SW1的截面示意图。图3示出图2的等效电路的配置。图2的示例是包括公共浮置层的IGBT结构。因为沟槽电极在栅极-栅极旁边形成，因此其被称为GG结构。借助这种配置，能处理更高功率。
如图2中所示，在具有GG结构的IGBT元件SW1中，N漂移层201形成在集电极电极(未示出)上。P型浮置层202以预定间隔形成在N漂移层201上。N型空穴阻挡层203形成在P型浮置层202之间。P型沟道区205(接触层)以及N型发射极区(发射极层)206形成在N型空穴阻挡层203上。
栅极电极(沟槽栅极)204形成在N型发射极区206和P型沟道区205的两侧上。栅极电极204形成在从N型发射极区206和P型沟道区205到达N型空穴阻挡层203和P型浮置层202之间的沟槽中。绝缘膜207形成为覆盖P型浮置层202，栅极电极204以及N型发射极区206.发射极电极(未示出)形成在从绝缘膜207到达N型发射极区206和P型沟道区205(接触层)的沟槽中。
在具有如图2中所示的GG结构的IGBT元件SW1中，产生如图3中所示的寄生电容。在IGBT元件SW1中，贯穿相应P型浮置层202的浮置电容Cfpc和Cgfp以及贯穿N型空穴阻挡层203的栅极电容Cgd变成集电极-栅极电容。
图4示出IGBT元件SW2的截面示意图的另一示例。图5示出图4的等效电路的配置。图4的示例是其中减小贯穿浮置层的电容分量的IGBT结构。这种IGBT结构被称为EGE结构，因为沟槽电极与发射极-栅极-发射极并联地形成。这种结构可处理更高功率和更高速度。
如图4中所示，具有EGE结构的IGBT元件SW2具有不同于图2的IGBT元件SW1的沟槽电极的配置。具体地，N型发射极区(发射极层)206形成在P型沟道区205(接触层)的中心处。栅极电极(沟槽栅极)204形成在P型沟道区205以及N型发射极区206的中心处。栅极电极204形成在从N型发射极区206和P型沟道区205到达N型空穴阻挡层203的沟槽中。发射极电极(沟槽发射极)208形成在P型沟道区205的两侧上。发射极电极208形成在从P型沟道区205到达N型空穴阻挡层203和P型浮置层202之间的沟槽中。
在具有如图4中所示的EGE结构的IGBT元件SW2中，产生如图5中所示的寄生电容。在IGBT元件SW2中，因为贯穿P型浮置层202的浮置电容Cfpc和Cgfp连接在集电极和发射极之间，因此集电极-栅极电容仅为贯穿N型空穴阻挡层203的栅极电容Cgd。因此，在EGE结构中，与GG结构相比可大幅降低反馈电容(Cres)。因此，高速切换变得可能。
<研究示例的IGBT模块的配置>
首先将说明应用本实施例之前的研究示例的IGBT模块。图6示出包括研究示例的IGBT模块的驱动系统的配置。
如图6中所示，研究示例的IGBT模块910包括多个IGBT安装单元(安装板)911。多个IGBT安装单元911分别对应于图1中的IGBT电路111(111a或111b)。在本示例中，两个IGBT安装单元911a和911b并联连接。
IGBT安装单元911a和911b具有相同配置。IGBT安装单元911a和911b分别包括IGBT元件SW(SWa和SWb)、二极管FD(FDa和FDb：续流二极管)以及电阻器R1(R1a和R1b)。二极管FD连接在IGBT元件SW的集电极和发射极之间。电阻器R1(阻尼电阻器)连接至IGBT元件SW的栅极。多个IGBT元件SW的栅极经由电阻器R1公共地连接。集电极也公共地连接。注意到多个IGBT元件SW的发射极也公共地连接(未示出)。驱动器模块112连接至栅极的公共节点。控制电压(栅极电压)从驱动器模块112提供。AC负载电路107连接至集电极的公共节点。在本示例中，电容C102连接至集电极的公共节点。注意到栅极被称为控制端子。任一集电极和发射极(在MOSFET的情况下为源极和漏极)可被称为第一端子或第二端子。
在这种配置中，存在当负载被短路(接地)时发生栅极振荡的问题。图7示出当负载被短路时的IGBT元件SW的信号波形。如图7中所示，当负载被短路时，栅极-发射极电压VGE以及集电极-发射极电压VCE中的波动较小。但是，集电极电流Ic增大，且饱和电流持续流动。随后，当由于温度特性等的影响而满足某一振荡条件(共振条件)时，栅极-发射极电压VGE的状态变得振荡(栅极振荡)。
当负载被短路时，这种振荡由通过IGBT并联连接形成的共振回路造成。图8示出共振回路的寄生分量。图9示出共振回路的等效电路。如图8中所示，栅极电容(集电极-栅极)电容C0a产生在IGBT安装单元911a中，栅极电容(集电极-栅极)电容C0b产生在IGBT安装单元911b中，寄生电感器L0a产生在IGBT安装单元911a和911b的集电极之间，且寄生电感器L0b产生在IGBT安装部911a和911b的栅极之间。随后，如图9中所示，再生电流流过包括电阻器R1a、栅极电容C0a、寄生电感器L0a、栅极电容C0b、电阻器R1b以及寄生电感器L0b的共振回路。为此，当共振回路中的寄生电感器分量大时，或当各个元件的反馈电容(栅极电容)小时，在负载被短路时产生如图7中所示的振荡，这是有问题的。
近来，由于IGBT的并联连接的数目往往随着输出功率增大而增加，因此寄生电感器分量倾向于增大。而且，存在降低反馈电容以便降低开关损耗的需求。为此，如何为了实现噪声/振荡的降低的目的而优化设备/模块的设计已经变成了问题。
例如，借助具有上述EGE结构的IGBT元件SW2，与具有GG结构的IGBT元件SW1相比，能大幅降低开关损耗。但是，借助具有上述EGE结构的IGBT元件SW2，由于非常小的反馈电容，因此当IGBT元件SW2并联连接时会发生振荡。为了避免这种振荡，可增大振荡回路中的栅极电阻器(R1a和R1b)的电阻值。但是，如果栅极电阻器的电阻值增大，则不能执行高速切换。因此，在本实施例中，采用以下IGBT模块结构以减小对开关特性的影响并避免栅极振荡的产生。
<根据第一实施例的IGBT模块的配置>
图10示出根据本实施例的IGBT模块的配置。如图10中所示，根据本实施例的IGBT模块110包括多个IGBT安装单元(安装板)121。多个IGBT安装单元121分别对应于图1中的IGBT电路111(111b或111a)。
IGBT安装单元121(121a和121b)除图6的研究示例的配置之外还包括二极管D1(D1a和D1b)。二极管D1(第一和第二二极管)并联连接至分别连接至IGBT元件SW的栅极的电阻器R1(第一和第二电阻器)。在各个二极管D1中，阳极连接至驱动器模块112侧(公共节点侧)，且阴极连接至IGBT元件SW的栅极侧。朝向栅极的方向为正向。二极管D1和电阻器R1可分别形成在IGBT安装单元121(半导体芯片)内部，或可以为外部部件。肖特基势垒二极管(SBD)等可用作二极管。除二极管D1之外的配置与图6中相同。
图11示出图10的配置中的共振回路的寄生分量。图12示出共振回路的等效电路。如图11中所示，与图8的配置相同，栅极电容C0a产生在IGBT安装单元121a中，栅极电容C0b产生在IGBT安装单元121b中，寄生电感器L0a产生在IGBT安装单元121a和121b的集电极之间，且寄生电感器L0b产生在IGBT安装单元121a和121b的栅极之间。随后，如图12中所示，共振回路将变成包括并联连接的电阻器R1a和二极管D1a、并联连接的栅极电容C0a、寄生电感器L0a、栅极电容C0b、电阻器R1b以及二极管D1b以及寄生电感器L0b的共振回路。
虽然共振回路中的再生电流流过二极管D1a，但是其倾向于流过电阻器R1b，因为二极管D1b为反向且电流路径被阻挡。因此，电阻器R1b(阻尼电阻器)的电阻可增大以由此减小振荡。而且，因为二极管D1(D1a和D1b)的栅极方向为正向，因此在导通时的栅极电荷路径的阻抗可保持为低。因此，也可避免开关损耗的增大，且可以高速执行操作。
当两个IGBT并联连接时，存在一个共振回路。因此，如图13中所示，由二极管D1和电阻器R1组成的并联电路可被插入在至少一个IGBT元件SW的栅极中。当三个或多个IGBT并联连接时，存在多个共振回路。因此，优选由二极管D1和电阻器R1组成的并联电路被插入在IGBT元件SW的各个栅极中。而且，本公开不限于IGBT元件且可采用替代的诸如功率MOSFET等的功率晶体管(栅极驱动三端子放大元件)。即，如图13中所示，IGBT模块(半导体装置)110可包括并联连接的IGBT元件SWb(第一功率晶体管)以及IGBT元件SWa(第二功率晶体管)、连接至IGBT元件SWb的栅极(控制端子)的电阻器R1(第一电阻器)、以及并联连接至电阻器R1的二极管D1(第一二极管)。在这种二极管D1中，朝向栅极的方向是正向。
如上所述，在本实施例中，在其中IGBT并联连接的驱动系统中，并联连接的正向二极管和电阻器被插入各个IGBT的栅极输入单元中。借助这种配置，能避免开关损耗的增大并抑制振荡。
如上述研究示例中，有效的是通过增大共振回路中的电阻值而增加阻尼效应，作为避免振荡的措施。但是，如果增加各个栅极电阻值，则不能完全利用设备中包括的高速切换的特征。这已经成为振荡抑制耐受能力以及开关特性之间折衷的问题。为此，在研究示例中，即使采用诸如EGE结构的高速IGBT，也不能完全利用其优势。但是，通过采用本实施例所应用的驱动系统中的IGBT，也能在并联连接的应用中完全利用高速开关特性。在这种情况下，可改善设备/模块的优化设计的自由度。
第二实施例
在本实施例中，将说明根据第一实施例的IGBT模块的实施示例。
<参考示例>
图14示出应用实施例之前的根据参考示例的IGBT模块的配置。图15示出参考示例。如上述研究示例中，本参考示例是其中仅一个电阻器被插入IGBT的栅极中的示例。
如图14中所示，参考示例的IGBT模块920包括IGBT安装单元921a和921b。IGBT安装单元921a和921b分别包括IGBT元件SWa和SWb以及二极管FDa和FDb。电阻器R1a和R1b分别外部连接至IGBT安装单元921a和921b的栅极端子。
如图15中所示，参考示例的IGBT模块920的实施示例包括栅极栅极电势区(图案：第一安装区)301a和301b、集电极电势区(图案：第二安装区)302以及发射极电势区(图案)303。各个区都为岛状，其上将安装相应元件。各个区都为由铜板形成的基板。在本示例中，在各个IGBT元件(IGBT芯片)SWa和SWb中，集电极端子(背侧端子)形成在背面(未示出)上，且发射极端子(焊盘)TE以及栅极端子(焊盘)TG(前侧端子)形成在前面上。
IGBT元件(IGBT芯片)SWa和SWb安装在集电极电势区302中。IGBT元件SWa和SWb的背侧端子(集电极端子)电连接至集电极电势区302。二极管(二极管芯片)FDa和FDb安装在集电极电势区302中。二极管FDa和FDb的背侧端子(阴极端子)电连接至集电极电势区302。
电阻器R1a和R1b为表面安装芯片电阻器。电阻器R1a安装在栅极电势区301a中，且电阻器R1a的背侧端子电连接至栅极电势区301a。电阻器R1b安装在栅极电势区301b中，且电阻器R1b的背侧端子电连接至栅极电势区301b。
IGBT元件SWa和SWb的前面上的多个发射极端子TE通过分别穿过二极管FDa和FDb的前侧端子(阳极端子)的导线电连接至发射极电势区303。IGBT元件SWa和SWb的表面上的栅极端子TG分别通过导线电连接至电阻器R1a和R1b的前侧端子。栅极电势区301a和301b通过导线彼此电连接。例如，栅极电势区301b电连接至驱动器模块112。栅极信号输入至栅极电势区301a和301b。
<实施示例1>
图16示出用于实现根据第一实施例的IGBT模块的配置示例。图17示出图16的实施示例1。
如图16中所示，根据本实施例的IGBT模块110包括IGBT安装单元121a和121b。IGBT安装单元121a和121b分别具有与参考示例的IGBT安装单元921a和921b相同的配置。电阻器R1a和二极管D1a，电阻器R1b和二极管D1b外部连接至栅极端子。
如图17中所示，在根据本实施例的IGBT模块110的实施示例1中，二极管D1a安装在栅极电势区301a中。二极管D1a的阳极端子电连接至栅极电势区301a，且二极管D1a的阴极端子电连接至电阻器R1a(表面安装芯片电阻器)的前侧端子。同样地，二极管D1b安装在栅极电势区301b中。二极管D1b的阳极端子电连接至栅极电势区301b，且二极管D1b的阴极端子电连接至电阻器R1b的前侧端子。除上述部件之外的配置与参考示例相同。
图18示出另一实施示例。图18示出其中引线型电阻器用作电阻器R1a和R1b的示例。在本情况下，需要用于连接电阻器的区域(图案)304a和304b以及用于连接二极管的区域(图案)305a和305b。即，电阻器R1a的一端连接至区域304a，且电阻器R1a的另一端连接至栅极电势区301a。二极管D1a的阳极端子连接至栅极电势区301a，且二极管D1a的阴极端子电连接至区域304a。同样地，电阻器R1b的一端连接至区域304b，且另一端连接至栅极电势区301b。二极管D1b的阳极端子连接至栅极电势区301b，且二极管D1b的阴极端子电连接至区域304b。
通常，栅极节点板的形状由是否存在外部电阻器以及外部电阻器的规格决定。当采用表面安装电阻器时，可通过图15中所示的岛(区域)实现区域。而当采用引线型电阻器时，需要连接至栅极焊盘的单独的岛。
因此，当通过引线型电阻器实现本实施例时，如图18中所示，需要改变衬底并添加布线，这会不利地增加成本。另一方面，当采用表面安装电阻器时，如图17中所示，本实施例可在不将衬底布局改变为图15的配置的情况下，通过添加一个二极管(为各个IGBT)加以实现。这保持了衬底的通用性且最小化了构件成本和安装工厂的增加。
如图18中所示，如果来自栅极焊盘的两个引线电阻/引线二极管被采用，则可实施与图18中所示的相同的配置。但是，在本情况下，会在焊盘的区域中存在限制。
<实施示例2>
图19示出用于实现根据第一实施例的IGBT模块的另一配置示例。图20示出图19的实施示例2。
如图19中所示，根据本实施例的IGBT模块110包括IGBT安装单元121a和121b。IGBT安装单元121a和121b分别包括IGBT元件SWa和SWb、二极管FDa和FDb、电阻器R1a和R1b以及二极管D1a和D1b。
如图20中所示，电阻器R1a和R1b以及二极管D1a和D1b形成在根据本实施例的IGBT模块110的实施示例2中的IGBT安装单元121a和121b中。因此，仅需要将IGBT元件SWa和SWb的栅极端子TG分别连接至栅极电势区301a和301b。除上述部件之外的配置与图17相同。
如上所述，实施示例2是其中栅极电阻器和并联二极管包括在IGBT芯片内部的示例。因此，可在不从应用本实施例之前的配置改变外部部件配置的情况下实现本实施例。
<实施示例3>
图21示出用于实现根据第一实施例的IGBT模块的另一配置示例。图22示出图21的实施示例3。
如图21中所示，根据本实施例的IGBT模块110包括IGBT安装单元121a和121b。IGBT安装单元121a和121b分别包括IGBT元件SWa和SWb、二极管FDa和FDb、电阻器R1a和R1b。二极管D1a和二极管D1b外部连接至栅极端子。
如图22中所示，在根据本实施例的IGBT模块110的实施示例3中，电阻器R1a和R1b分别形成在IGBT安装单元121a和121b中。因此，包括电阻器R1两端处的栅极端子TG1和TG2作为IGBT元件SWa和SWb的前侧端子。而且，包括用于连接二极管的区域(图案：第三安装区)306a和306b。
在IGBT安装单元121a中，栅极端子TG1连接至栅极电势区301a，栅极端子TG2连接至区域306a，且二极管D1a连接在区域306a和栅极电势区301a之间。在IGBT安装单元121b中，栅极端子TG1连接至栅极电势区301b，栅极端子TG2连接至区域306b，且二极管D1b连接在区域306b和栅极电势区301b之间。除上述部件之外的配置与图17的配置相同。
如上所述，在实施示例3中，仅栅极电阻器被包括在IGBT芯片中，焊盘提供在电阻器的两端处，且并联二极管连接至其。因此，本实施例可通过一个外部二极管(对于各个IGBT来说)实现。
虽然已经基于实施例详细说明了本发明人提出的本发明，但是显而易见的是本公开不限于上述实施例，且在不脱离本发明范围的情况下可进行各种修改。
第一和第二实施例可根据本领域技术人员的需要进行组合。
虽然根据若干实施例说明了本发明，但是本领域技术人员将认识到本发明可在随附权利要求的精神和范围内实施为各种修改，且本发明不限于上述示例。
而且，权利要求的范围不受上述实施例限制。
而且，注意到即使在审查期间进行后续修改，申请人也旨在涵盖所有权利要求元素的等效范围。

Claims (11)

1.一种半导体装置，包括：
第一功率晶体管和第二功率晶体管，所述第一功率晶体管和所述第二功率晶体管彼此并联连接；
第一电阻器，所述第一电阻器连接至所述第一功率晶体管的控制端子；以及
第一二极管，所述第一二极管并联连接至所述第一电阻器，其中在所述第一二极管中，朝向所述第一功率晶体管的所述控制端子的方向为正向。
2.根据权利要求1所述的半导体装置，其中
所述第一功率晶体管和所述第二功率晶体管的第一端子或第二端子被公共地连接，以及
所述第一功率晶体管和所述第二功率晶体管的控制端子通过所述第一电阻器和所述第一二极管被公共地连接。
3.根据权利要求1所述的半导体装置，还包括：
第二电阻器，所述第二电阻器连接至所述第二功率晶体管的所述控制端子；以及
第二二极管，所述第二二极管并联连接至所述第二电阻器，其中在所述第二二极管中，朝向所述第二功率晶体管的所述控制端子的方向为正向。
4.根据权利要求1所述的半导体装置，其中所述第一功率晶体管和所述第二功率晶体管为IGBT元件。
5.根据权利要求4所述的半导体装置，其中所述IGBT元件包括栅极-栅极结构，在所述栅极-栅极结构中，以沟道区插入在第一沟槽栅极和第二沟槽栅极之间来设置所述第一沟槽栅极和所述第二沟槽栅极。
6.根据权利要求4所述的半导体装置，其中所述IGBT元件包括发射极-栅极-发射极结构，在所述发射极-栅极-发射极结构中，以沟道区和沟槽栅极插入在第一沟槽发射极和第二沟槽发射极之间来设置所述第一沟槽发射极和所述第二沟槽发射极。
7.根据权利要求1所述的半导体装置，还包括：
第一安装区，在所述第一安装区上安装半导体芯片，所述半导体芯片包括在所述半导体芯片上形成的所述第一功率晶体管；以及
第二安装区，在所述第二安装区上安装所述第一电阻器和所述第一二极管，所述第一电阻器和所述第一二极管连接至所述第一功率晶体管，并且用于所述控制端子的控制信号被提供至所述第二安装区。
8.根据权利要求7所述的半导体装置，其中所述第一电阻器为表面安装芯片电阻器。
9.根据权利要求1所述的半导体装置，还包括：
第一安装区，在所述第一安装区上安装半导体芯片，所述半导体芯片包括形成在所述半导体芯片上的所述第一功率晶体管、所述第一电阻器以及所述第一二极管；以及
第二安装区，所述第二安装区连接至所述第一电阻器和所述第一二极管并且被提供有用于所述控制端子的控制信号。
10.根据权利要求1所述的半导体装置，还包括：
第一安装区，在所述第一安装区上安装半导体芯片，所述半导体芯片包括形成在所述半导体芯片上的所述第一功率晶体管和所述第一电阻器；
第二安装区，所述第二安装区连接至所述第一电阻器并且被提供有用于所述控制端子的控制信号；以及
第三安装区，所述第三安装区连接至所述第一功率晶体管以及所述第一电阻器并且包括安装在所述第三安装区上的所述第一二极管。
11.一种逆变器系统，包括：
逆变器电路，所述逆变器电路包括串联连接的第一功率晶体管电路和第二功率晶体管电路；以及
驱动电路，所述驱动电路被配置为驱动所述第一功率晶体管电路和所述第二功率晶体管电路，其中
所述第一功率晶体管电路和所述第二功率晶体管电路包括：
并联连接的多个功率晶体管；
分别连接至所述多个功率晶体管的控制端子的多个电阻器；
分别并联连接至所述多个电阻器的多个二极管，其中
在所述二极管中，朝向所述多个功率晶体管的所述控制端子的每一个的方向为正向。
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