TW201838038A - 半導體裝置的製造方法以及半導體裝置 - Google Patents
半導體裝置的製造方法以及半導體裝置 Download PDFInfo
- Publication number
- TW201838038A TW201838038A TW107104968A TW107104968A TW201838038A TW 201838038 A TW201838038 A TW 201838038A TW 107104968 A TW107104968 A TW 107104968A TW 107104968 A TW107104968 A TW 107104968A TW 201838038 A TW201838038 A TW 201838038A
- Authority
- TW
- Taiwan
- Prior art keywords
- insulating film
- semiconductor substrate
- wafer
- gate electrode
- gate insulating
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 247
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 163
- 238000012216 screening Methods 0.000 claims abstract description 86
- 230000002950 deficient Effects 0.000 claims abstract description 45
- 238000000034 method Methods 0.000 claims description 40
- 238000011109 contamination Methods 0.000 claims description 26
- 230000005684 electric field Effects 0.000 claims description 21
- 238000000059 patterning Methods 0.000 claims description 17
- 238000009413 insulation Methods 0.000 claims description 13
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 230000007547 defect Effects 0.000 abstract description 46
- 238000012360 testing method Methods 0.000 abstract description 14
- 239000010408 film Substances 0.000 description 374
- 235000012431 wafers Nutrition 0.000 description 59
- 239000003990 capacitor Substances 0.000 description 23
- 229910052751 metal Inorganic materials 0.000 description 18
- 239000002184 metal Substances 0.000 description 18
- 230000005856 abnormality Effects 0.000 description 16
- 239000000523 sample Substances 0.000 description 14
- 239000010410 layer Substances 0.000 description 12
- 238000009792 diffusion process Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 10
- 238000002955 isolation Methods 0.000 description 10
- 229920006395 saturated elastomer Polymers 0.000 description 9
- 239000010409 thin film Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 239000002356 single layer Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 229910052735 hafnium Inorganic materials 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 238000011835 investigation Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 238000007664 blowing Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000002265 prevention Effects 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000000994 depressogenic effect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000005067 remediation Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000002484 cyclic voltammetry Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- -1 hafnium nitride Chemical class 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017-028013 | 2017-02-17 | ||
| JP2017028013 | 2017-02-17 | ||
| JP2017-243998 | 2017-12-20 | ||
| JP2017243998A JP7010687B2 (ja) | 2017-02-17 | 2017-12-20 | 半導体装置の製造方法および半導体装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201838038A true TW201838038A (zh) | 2018-10-16 |
Family
ID=63248741
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW107104968A TW201838038A (zh) | 2017-02-17 | 2018-02-12 | 半導體裝置的製造方法以及半導體裝置 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP7010687B2 (ja) |
| KR (1) | KR20180095462A (ja) |
| TW (1) | TW201838038A (ja) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6685526B1 (ja) * | 2019-10-11 | 2020-04-22 | ハイソル株式会社 | プローバ装置、及び計測用治具 |
| JP7497629B2 (ja) * | 2020-07-03 | 2024-06-11 | 富士電機株式会社 | 半導体チップの試験装置および試験方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR960007478B1 (ko) | 1990-12-27 | 1996-06-03 | 가부시키가이샤 도시바 | 반도체장치 및 반도체장치의 제조방법 |
| JPH0992698A (ja) * | 1995-09-26 | 1997-04-04 | Hitachi Ltd | スクリーニング方法および半導体装置 |
| JP2000106334A (ja) * | 1998-09-28 | 2000-04-11 | Toshiba Corp | 半導体装置の製造方法 |
| JP2005085788A (ja) * | 2003-09-04 | 2005-03-31 | Oki Electric Ind Co Ltd | 半導体装置のスクリーニング方法 |
| JP4518830B2 (ja) * | 2004-04-13 | 2010-08-04 | 株式会社リコー | 半導体装置の製造方法 |
| JP2008252009A (ja) * | 2007-03-30 | 2008-10-16 | Philtech Inc | ３００ｍｍシリコンテストウエハおよび半導体製造装置 |
| JP2013120875A (ja) * | 2011-12-08 | 2013-06-17 | Renesas Electronics Corp | 半導体ウエハのテスト方法 |
-
2017
- 2017-12-20 JP JP2017243998A patent/JP7010687B2/ja active Active
-
2018
- 2018-02-12 TW TW107104968A patent/TW201838038A/zh unknown
- 2018-02-14 KR KR1020180018196A patent/KR20180095462A/ko not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| KR20180095462A (ko) | 2018-08-27 |
| JP7010687B2 (ja) | 2022-01-26 |
| JP2018133559A (ja) | 2018-08-23 |
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