TW201826421A - 多層配線板之製造方法 - Google Patents
多層配線板之製造方法 Download PDFInfo
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- TW201826421A TW201826421A TW106140872A TW106140872A TW201826421A TW 201826421 A TW201826421 A TW 201826421A TW 106140872 A TW106140872 A TW 106140872A TW 106140872 A TW106140872 A TW 106140872A TW 201826421 A TW201826421 A TW 201826421A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 41
- 239000010410 layer Substances 0.000 claims abstract description 337
- 238000000034 method Methods 0.000 claims abstract description 117
- 239000012790 adhesive layer Substances 0.000 claims abstract description 116
- 239000007788 liquid Substances 0.000 claims abstract description 14
- 230000002787 reinforcement Effects 0.000 claims abstract description 14
- 230000003014 reinforcing effect Effects 0.000 claims description 100
- 229910052751 metal Inorganic materials 0.000 claims description 83
- 239000002184 metal Substances 0.000 claims description 83
- 229920005989 resin Polymers 0.000 claims description 45
- 239000011347 resin Substances 0.000 claims description 45
- 230000008569 process Effects 0.000 claims description 38
- 230000001681 protective effect Effects 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 25
- 239000002131 composite material Substances 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 9
- 238000010030 laminating Methods 0.000 claims description 9
- 239000002023 wood Substances 0.000 claims 1
- 238000005452 bending Methods 0.000 abstract description 22
- 238000009413 insulation Methods 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 70
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 40
- 239000000463 material Substances 0.000 description 38
- 239000010949 copper Substances 0.000 description 32
- 229910052802 copper Inorganic materials 0.000 description 31
- 239000002585 base Substances 0.000 description 30
- 230000015572 biosynthetic process Effects 0.000 description 22
- 239000011521 glass Substances 0.000 description 21
- 239000000243 solution Substances 0.000 description 20
- 239000000853 adhesive Substances 0.000 description 19
- 230000001070 adhesive effect Effects 0.000 description 19
- 230000002776 aggregation Effects 0.000 description 18
- -1 alkyl methacrylates Chemical class 0.000 description 15
- 235000012431 wafers Nutrition 0.000 description 15
- 238000007747 plating Methods 0.000 description 14
- 238000004220 aggregation Methods 0.000 description 13
- 238000007689 inspection Methods 0.000 description 11
- 229920002120 photoresistant polymer Polymers 0.000 description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 9
- 229910052799 carbon Inorganic materials 0.000 description 9
- 239000011889 copper foil Substances 0.000 description 9
- 238000004090 dissolution Methods 0.000 description 9
- 229910052759 nickel Inorganic materials 0.000 description 9
- 229920001721 polyimide Polymers 0.000 description 9
- 239000010936 titanium Substances 0.000 description 9
- 239000000919 ceramic Substances 0.000 description 8
- 238000003475 lamination Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 239000010935 stainless steel Substances 0.000 description 8
- 229910052719 titanium Inorganic materials 0.000 description 8
- 238000007654 immersion Methods 0.000 description 7
- 239000009719 polyimide resin Substances 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 229910001220 stainless steel Inorganic materials 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000002923 metal particle Substances 0.000 description 6
- 229910052750 molybdenum Inorganic materials 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- 239000011342 resin composition Substances 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 238000005054 agglomeration Methods 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 5
- 239000011888 foil Substances 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- 239000012808 vapor phase Substances 0.000 description 5
- 229920000106 Liquid crystal polymer Polymers 0.000 description 4
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 4
- 239000003513 alkali Substances 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000011162 core material Substances 0.000 description 4
- 239000003365 glass fiber Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 229910000906 Bronze Inorganic materials 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical group C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 3
- 229910001069 Ti alloy Inorganic materials 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 239000010974 bronze Substances 0.000 description 3
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 239000004848 polyfunctional curative Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000007788 roughening Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229920000265 Polyparaphenylene Polymers 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 150000001335 aliphatic alkanes Chemical class 0.000 description 2
- 229910003481 amorphous carbon Inorganic materials 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 2
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 238000010191 image analysis Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 125000005395 methacrylic acid group Chemical group 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 2
- 229920000058 polyacrylate Polymers 0.000 description 2
- 229920000768 polyamine Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229920001955 polyphenylene ether Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 239000003755 preservative agent Substances 0.000 description 2
- 230000002335 preservative effect Effects 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 230000003313 weakening effect Effects 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 229910000975 Carbon steel Inorganic materials 0.000 description 1
- 229910001018 Cast iron Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910000570 Cupronickel Inorganic materials 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 229910000997 High-speed steel Inorganic materials 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 239000004640 Melamine resin Substances 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910001315 Tool steel Inorganic materials 0.000 description 1
- 238000007545 Vickers hardness test Methods 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- CKUAXEQHGKSLHN-UHFFFAOYSA-N [C].[N] Chemical compound [C].[N] CKUAXEQHGKSLHN-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000004931 aggregating effect Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 125000005250 alkyl acrylate group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- JUPQTSLXMOCDHR-UHFFFAOYSA-N benzene-1,4-diol;bis(4-fluorophenyl)methanone Chemical compound OC1=CC=C(O)C=C1.C1=CC(F)=CC=C1C(=O)C1=CC=C(F)C=C1 JUPQTSLXMOCDHR-UHFFFAOYSA-N 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
- 239000010962 carbon steel Substances 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 150000007942 carboxylates Chemical class 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 239000011195 cermet Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 description 1
- IUYOGGFTLHZHEG-UHFFFAOYSA-N copper titanium Chemical compound [Ti].[Cu] IUYOGGFTLHZHEG-UHFFFAOYSA-N 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- QHSJIZLJUFMIFP-UHFFFAOYSA-N ethene;1,1,2,2-tetrafluoroethene Chemical compound C=C.FC(F)=C(F)F QHSJIZLJUFMIFP-UHFFFAOYSA-N 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 229910021385 hard carbon Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 229960002050 hydrofluoric acid Drugs 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000113 methacrylic resin Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920013716 polyethylene resin Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000012779 reinforcing material Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000004439 roughness measurement Methods 0.000 description 1
- 102200082816 rs34868397 Human genes 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229910001256 stainless steel alloy Inorganic materials 0.000 description 1
- 229920003048 styrene butadiene rubber Polymers 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/38—Pressure-sensitive adhesives [PSA]
- C09J7/381—Pressure-sensitive adhesives [PSA] based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
- C09J7/385—Acrylic polymers
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- C—CHEMISTRY; METALLURGY
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- C09J201/00—Adhesives based on unspecified macromolecular compounds
- C09J201/02—Adhesives based on unspecified macromolecular compounds characterised by the presence of specified groups, e.g. terminal or pendant functional groups
- C09J201/06—Adhesives based on unspecified macromolecular compounds characterised by the presence of specified groups, e.g. terminal or pendant functional groups containing oxygen atoms
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
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- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
- C09J7/24—Plastics; Metallised plastics based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
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- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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Abstract
本發明係一種多層配線板之製造方法,係加以提供交互形成配線層及絕緣層而製作多層層積體的工程,和於多層層積體一方的面,藉由可溶性黏著層而層積補強薄片之工程,其中,包含:存在有於補強薄片與多層層積體所對向之對向區域內,未形成有可溶性黏著層之非占有區域的工程,和使可溶解可溶性黏著層之液體,浸入於非占有區域,使可溶性黏著層溶解或軟化的工程,和自多層層積體,在可溶性黏著層之位置剝離補強薄片而得到多層配線板之工程者。<0}{0>この方法によれば、多層配線層を局部的に大きく湾曲させないように補強することができ、それにより多層配線層の接続信頼性と多層配線層表面の平坦性(コプラナリティ)を向上することができる。<}97{>如根據此方法,可呈未局部使多層配線層產生大彎曲地進行補強者,且經由此而可提升多層配線層之連接信賴性與多層配線層表面之平坦性(共面性)。<0}{0>また、役目を果たした補強シートの剥離を、多層積層体に与える応力を最小化しながら極めて短時間で行うこともできる。<}100{>另外,可將賦予於多層層積體之應力作為最小化之同時,以極短時間而進行達成作用之補強薄片的剝離者。
Description
[0001] 本發明係有關多層配線板之製造方法。
[0002] 近年,為了提高印刷配線板之安裝密度而作為小型化,而成為呈廣泛進行印刷配線板之多層化。如此之多層印刷配線板係在許多攜帶用電子機器,將輕量化或小型化作為目的而加以利用。並且,對於此多層印刷配線板,係要求層間絕緣膜之厚度更減低,以及作為配線板之更一層的輕量化。 [0003] 作為滿足如此要求之技術,加以採用使用聚結聚積法之多層印刷配線板的製造方法。聚結聚集法係指:於所謂芯材(芯材)上,以稱為聚集法之手法而交互層積(聚集)絕緣層與配線層而作為多層化之後,除去芯材(芯材)而僅以聚集層而形成配線板之方法。在聚結聚集法中,係加以提案有呈可容易地進行支持體與多層印刷配線板之剝離地,使用附有載體銅箔者。例如,對於專利文獻1(日本特開2005-101137號公報),係加以揭示有:包含於附有載體銅箔之載體面,貼上絕緣樹脂層而作為支持體,再於附有載體銅箔之極薄銅層側,經由光阻加工,圖案電解銅電鍍,光阻膜除去等之工程,形成第一配線導體之後,形成聚集配線層,剝離附有載體支持基板,除去極薄銅層者之半導體元件搭載用封裝基板的製造方法。 [0004] 特別是,伴隨著電子裝置之更一層之小型化及省電力化,對於半導體晶片及印刷配線板之高集成化及對於薄型化之要求則提高。作為滿足有關的要求之新世代封裝技術,近年加以檢討有FO-WLP(Fan-Out Wafer Level Packaging)或PLP(Panel Level Packaging)之採用。並且,在FO-WLP或PLP中,亦加以檢討有聚結聚集法之採用。作為如此工法之一,於聚結支持體表面,形成配線層及因應必要而形成聚集配線層,再因應必要而剝離支持體之後,進行晶片的安裝,而有稱為RDL-First(Redistribution Layer-First)法之工法。 [0005] 例如,對於專利文獻2(日本特開2015-35551公報),係加以揭示有:包含對於玻璃或矽晶圓所成之支持體的主面之金屬剝離層的形成,對於其上方之絕緣樹脂層的形成,對於其上方之包含聚集層之再配線層 (Redistribution Layer)的形成,對於其上方之半導體積體電路的安裝及封閉,經由支持體之除去的剝離層之露出,經由剝離層之除去的2次安裝墊片之露出,以及對於2次安裝墊片的表面之焊球的形成,以及2次安裝之半導體裝置之製造方法。對於專利文獻3(日本特開2008-251702號公報),係加以揭示有:包含對於聚結支持體上之作為第1電極墊片之埋入配線層的形成,對於其上方之作為第2電極墊片之埋入配線層的形成,聚結支持體之剝離,及從之後的埋入配線層之背面的晶片之安裝,之半導體裝置之製造方法。對於專利文獻4(日本特開2015-170767號公報),係加以揭示有:包含對於聚結支持體上之剝離層的形成,對於其上方之埋入配線層及聚集層之形成,對於聚集層之表面的配線基板之安裝,載體的剝離,及半導體晶片的安裝之電路基板之製造方法。此剝離層係包含因紫外線的照射而引起而生成氣體的組成物者,而作為經由此而未賦予損傷於配線層,可容易且簡單地進行支持基板之剝離及剝離層之除去者。 [0006] 但對於專利文獻5(日本特開2015-76477號公報),係加以揭示有:包含對於支持體上的第1剝離層之形成,被覆第1剝離層之第2剝離層的形成,對於第2剝離層上之配線含有樹脂層的形成,對於基板的樹脂層之連接,經由第1剝離層及第2剝離層之除去的支持體之剝離,對於樹脂層上之電子構件的連接之電子裝置的製造方法,而第1剝離層則由可溶鹼之無機絕緣材料所成,第2剝離層則由不溶鹼之無機材料所成者。 [先前技術文獻] [專利文獻] [0007] [專利文獻1] 日本特開2005-101137號公報 [專利文獻2] 日本特開2015-35551號公報 [專利文獻3] 日本特開2008-251702號公報 [專利文獻4] 日本特開2015-170767號公報 [專利文獻5] 日本特開2015-76477號公報
[0008] 受到檢討有如上述之FO-WLP或PLP的採用之近年的技術動向,而加以要求聚集層之薄型化。但,聚集層為薄之情況,自使用聚結聚集法而製作之附有聚集層基材,剝離基材時,有著聚集層局部性增大而彎曲之情況。有關聚集層之大的彎曲係引起聚集層內部之配線層的斷線或剝離,其結果,會使配線層之連接信賴性降低。對於有關之問題欲進行對策,而考慮藉由黏著剝離層,使補強薄片層積於多層層積體者。經由此,可呈未局部使多層配線層產生大彎曲地進行補強者,且經由此而可提升多層配線層之連接信賴性與多層配線層表面之平坦性(共面性)。但,如何將經由黏著剝離層而密著於多層層積體的補強薄片之剝離,未賦予過度之應力於多層層積體而效率佳地進行則成為下一個的課題。 [0009] 本發明者們係這次在多層配線板之製造中,得到經由使補強薄片層積於多層層積體之時,可呈未使多層配線層局部性地產生大彎曲地進行補強,且經由此而可提升多層配線層之連接信賴性與多層配線層表面之平坦性(共面性)之見解。並且,由對於補強薄片之多層層積體的層積,使用可溶性黏著層,且設置未形成有可溶性黏著層於特定區域內之非占有區域者,亦可得到經由溶解剝離或依據此等之手法,將賦予多層層積體之應力作為最小化之同時,可以極短時間而進行達成作用之補強薄片的剝離之見解。 [0010] 隨之,本發明之第一目的係提供:可呈未使多層配線層局部性地產生大彎曲地進行補強,且經由此而可提升多層配線層之連接信賴性與多層配線層表面之平坦性(共面性)之多層配線板的製造方法者。另外,本發明之第二目的係提供:將賦予於多層層積體之應力作為最小化之同時,可以極短時間而進行達成作用之補強薄片的剝離之多層配線板的製造方法者。 [0011] 如根據本發明之一形態,加以提供:包含交互形成配線層及絕緣層而製作多層層積體的工程, 和於前述多層層積體一方的面,藉由可溶性黏著層而層積補強薄片之工程,係存在有於前述補強薄片與前述多層層積體所對向之對向區域內,未形成有可溶性黏著層之非占有區域的工程, 和使可溶解前述可溶性黏著層之液體,浸入於前述非占有區域,使前述可溶性黏著層溶解或軟化的工程, 和自前述多層層積體,在前述可溶性黏著層之位置剝離前述補強薄片而得到多層配線板之工程之多層配線板的製造方法。
[0013] 多層配線板之製造方法 經由本發明之多層配線板的製造方法係包含:(1)經由期望而使用之層積板的準備,(2)多層層積體的製作,(3)補強薄片之層積,(4)經由期望所進行之基材的剝離,(5)經由期望所進行之金屬層的蝕刻除去,(6)經由期望所進行之第1配線層的表面處理,(7)經由期望所進行之電子元件的搭載,(8)可溶性黏著層之溶解或軟化,及(9)補強薄片之剝離的各工程。 [0014] 以下,參照圖面同時,對於各工程(1)~(9)加以說明。 [0015] (1) 層積板之準備(任意工程) 經由期望,如圖1(a)所示,準備為了形成多層配線板之成為基底的層積板10。層積板10係依據具備基材12,剝離層14及金屬層16。層積板10係亦可為所謂附有載體銅箔之形態。對於層積板10之本發明的理想形態係作為後述之構成。 [0016] (2) 多層層積體之製作 如圖1(b)及(c)所示,交互形成配線層18及絕緣層20而製作多層層積體26。由圖1(b)及(c)所示之配線層18及絕緣層20而加以構成之逐次層積構造係為一般稱為聚集層乃至聚集配線層之構成,但在本發明之製造方法中,係不僅一般在印刷配線板中所採用之公知的僅由聚集配線層的構成所成之多層層積體的形成方法,而亦可採用藉由絕緣性接著劑而層積預先所形成之成為附有凸塊之多層層積體的一部分之層積體的方法等,而未特別加以限定。 [0017] 為了形成多層配線板之成為基底的基礎構件係無特別加以限定。作為如此之基礎構件而使用上述之層積板10之情況,多層層積體26則加以製作於層積板10之金屬層16的表面者為佳。以下,說明在使用層積板10之情況的多層層積體26之理想的製造方法。 [0018] 此情況,首先,如圖1(b)所示,於金屬層16之表面,形成第1配線層18。典型而言,第1配線層18之形成係依照公知的手法,由光阻層的形成,電性鍍銅層的形成,光阻層的剝離,以及經由期望而歷經銅沖洗蝕刻而加以進行。例如,如以下。首先,於金屬層16的表面,以特定的圖案而形成光阻層。光阻膜係為感光性薄膜為佳,例如為感光性乾膜。光阻層係如經由曝光及顯像而賦與特定之配線圖案即可。金屬層16之露出表面(即,未在光阻層加以遮蔽之部分),形成電性鍍銅層。電性鍍銅係如經由公知的手法而進行即可,未特別加以限定。接著,剝離光阻層。其結果,電性鍍銅層則殘留為配線圖案狀而形成第1配線層18,未形成配線圖案之部分的金屬層16則露出。 [0019] 金屬層16則不僅供電層而包含反射防止層之情況,經由沖洗蝕刻而除去相當於金屬層16之供電層的部分,使反射防止層露出亦可。由如此作為者,後述之第1配線層18的畫像檢查則容易進行。反射防止層係由選自Cr、W、Ta、Ti、Ni及Mo之至少1種金屬而加以構成者為佳。此等金屬係因具有對於銅沖洗蝕刻液而言不會溶解之性質之故,可對於銅沖洗蝕刻液而言呈現優越之耐藥品性者。 [0020] 如圖1(c)所示,於形成有層積板10之第1配線層18的面,交互形成絕緣層20及第n配線層18(n係2以上的整數),以埋入配線層之形式而結合第1配線層18,得到多層層積體26。即,配線層18係為2層以上,而可稱為第1配線層、第2配線層、・・・、第n配線層者。絕緣層20係如為1層以上即可。即,在本發明之多層配線板40係至少將2層的配線層18(即,至少將第1配線層18及第2配線層18),至少與1層之絕緣層20同時具有之構成。 [0021] 另外,對於在聚集配線層之最表面的配線層上,係因應必要,加以形成焊接光阻層及/或表面金屬處理層(例如,OSP(Organic Solderbility Preservative)處理層、鍍Au層、鍍Ni-Au層等)亦可。 [0022] (3) 補強薄片的層積 如圖1(d)所示,於多層層積體26之一方的面(例如,與多層層積體26之層積板10相反側的表面),藉由可溶性黏著層28而層積補強薄片30。經由此,多層層積體26係呈可經由補強薄片30而未局部性產生大彎曲地加以補強者。即,剝離時或彎曲則有效果地加以防止乃至抑制。如此作為,可迴避有經由彎曲而引起之聚集配線層內部的配線層之斷線或剝離,而提升多層配線層之連接信賴性者。另外,由有效果地防止乃至抑制彎曲者,可提升多層配線層表面的平坦性(共面性)者。 [0023] 補強薄片30之層積時,作為呈存在有未加以形成可溶性黏著層28於補強薄片30與多層層積體26所對向之對向區域F內之非占有區域U。非占有區域U係在之後的工程中,對於可溶性黏著層28而言,容許可溶解之液體(以下,稱為溶解液)之接觸或浸透,其結果,可容易進行溶解剝離或經由依據此之手法的補強薄片30之剝離。即,非占有區域U係賦予補強薄片30與多層層積體26之間的間隙,藉由此間隙而可使溶解液浸入至對向區域F內者。 [0024] 劃定非占有區域U之可溶性黏著層28的形狀及尺寸係如因應目的而做適宜決定即可,而未特別加以限定。但如圖4所示,可溶性黏著層28係加以個別化於複數之占有區域者為佳。即,非占有區域U則圍繞各個占有區域之周圍者為佳。此時,由可溶性黏著層28所被覆之各個占有區域的外接圓C(參照圖4)之直徑則為0.1~10mm為佳,而更理想為0.2~8.0mm、又更理想為0.5~5.0mm。當為如此區域內時,充分確保經由在溶解液浸入前之可溶性黏著層28的黏著力同時,促進對於溶解液之對向區域F內的浸入而可更一層容易地進行經由溶解剝離等之補強薄片30的剝離者。作為在非占有區域U圍繞周圍之各個占有區域(加以個別化之可溶性黏著層28)之形狀的例係可舉出:圖4所示之長方形等之各種多角形,圓形等之各種形狀,如圖5所示之星形多角形之直線的輪廓線為複雜之多角形,如圖6所示之曲線的輪廓線為複雜之異形狀亦可。如此之可溶性黏著層28的個別化形狀係如使用點圖案印刷,網版印刷等之公知的手法而形成即可。 [0025] 對於對向區域F之面積而言之非占有區域U的比例係20~90面積%者為佳,而更理想為40~85面積%、又更理想為50~75面積%。當為如此區域內時,充分確保經由在溶解液浸入前之可溶性黏著層28的黏著力同時,促進對於溶解液之對向區域F內的浸入而可更一層容易地進行經由溶解剝離等之補強薄片30的剝離者。然而,對向區域F之面積係可溶性黏著層28之占有面積與非占有區域U的面積之總和。隨之,對於對向區域F之面積而言之可溶性黏著層28的占有面積之比例係亦可換句話為理想為10~80面積%、更理想為15~60面積%、又更理想為25~50面積%者。 [0026] 可溶性黏著層28係可以期望的密著性而貼上補強薄片30於多層層積體26,且如為經由與之後所使用之溶解液的接觸而可溶解或軟化的層,其構成係除了非占有區域U之形成以外,未特別加以限定。可溶性黏著層28係例如,可為稱作黏著劑層,黏著剝離層,剝離層等之公知的層。可溶性黏著層28係具有黏著性者為典型,因此,黏著劑層或黏著剝離層則可稱為典型者。但,可溶性黏著層28係亦可為未具有黏著性之剝離層。然而,可溶性黏著層28之形成區域係在未損及本發明之效果的區域中,可做適宜調整者。 [0027] 可溶性黏著層28係包含溶液可溶型樹脂者為佳,而更理想為包含酸可溶型樹脂或鹼可溶型樹脂。此溶液可溶型樹脂(例如,酸可溶型樹脂或鹼可溶型樹脂)係因經由與溶解液(例如,酸溶液或鹼溶液)的接觸而可有效率地溶解或軟化之故,成為可更有效果地進行在之後的工程中之補強薄片30的剝離。然而,補強薄片30的剝離強度之控制係可經由藥品可溶成分的含有量控制,樹脂層之厚度控制而進行者。作為酸可溶型樹脂的例,係可溶於酸之充填物,可舉出使二氧化矽,碳酸鈣,硫酸鋇等充填為60wt%以上高濃度之樹脂組成物。作為構成此樹脂組成物之樹脂的例係可舉出:環氧樹脂,丙烯酸樹脂,甲基丙烯酸樹脂,三聚氰胺樹脂,聚酯樹脂,丁苯共聚物,丙烯腈樹脂,聚醯亞胺樹脂等。作為鹼可溶型樹脂的例係可舉出甲基丙烯酸聚合物及丙烯酸聚合物。作為甲基丙烯酸聚合物的例係可舉出:碳數具有1~18之烷烴之甲基丙烯酸烷基酯等。作為丙烯酸聚合物的例係可舉出:碳數具有1~18之烷烴之丙烯酸烷基酯。此時,為了使樹脂的強度提升,使苯乙烯單體,苯乙烯寡聚物等含有於樹脂組成物亦可。另外,使此等之樹脂與熱硬化可能之環氧樹脂,含有於樹脂組成物亦可。更且,為了使與環氧樹脂之熱硬化性提升,而使氨系硬化劑,酚系硬化劑,異氰酸酯基含有硬化劑等,含有於樹脂組成物亦可。 [0028] 可溶性黏著層28的厚度係0.5~50μm為佳,更理想為0.8~45μm、特別理想為1.0~40μm。當為如此區域內時,充分確保經由在溶解液浸入前之可溶性黏著層28的黏著力同時,促進對於對向區域F內之溶解液的浸入(隨之,使可溶性黏著層28之溶解或軟化促進)而可更一層容易地進行補強薄片30的剝離者。 [0029] 在使用層積板10之形態中,可溶性黏著層28係帶來較剝離層14為高之剝離強度的層為佳。然而,作為比較可溶性黏著層28與剝離層14之剝離強度的大小關係之方法係亦有比較後述之各剝離強度絕對值之方法,但經由配合在多層配線板製造工程中加以剝離之形態的測定之比較亦為有效。具體而言,係比較剝離層14之剝離強度係作為自聚集配線層剝離基材12時產生的耐力,而可溶性黏著層28之剝離強度係作為自多層層積體26剝離補強薄片30時產生的耐力所測定的值者亦為有效。 [0030] 可溶性黏著層28之剝離強度係剝離層14之剝離強度的1.02~300倍者為佳,而更理想為1.05~100倍、又更理想為3.0~50倍、特別理想為5.0~30倍。例如,可溶性黏著層28之剝離強度係30~300gf/cm者為佳,而更理想為40~250gf/cm、又更理想為50~175gf/cm、特別理想為70~150gf/cm。由作為如此區域者,在剝離層14剝離基材12時,可更有效果地防止對於多層配線層之應力集中者,其結果,可更有效果地預防多層配線層內的斷線者。另外,在剝離層14進行剝離時,可更有效果地防止可溶性黏著層28之異常剝離(連鎖性的剝離)之故,而成為可更確實地保持在剝離層14進行剝離後之第1配線層18的表面為平坦者。可溶性黏著層28之剝離強度係基本上可與上述之剝離層14的剝離強度之測定方法同樣作為進行測定者,但應對於指在與溶解液之接觸前所測定之剝離強度的點留意。具體而言,可溶性黏著層28之剝離強度係如以下作為而加以測定者。首先,形成可溶性黏著層28於補強薄片30上,再於其上方層積形成厚度18μm的銅箔,形成覆銅層積板。之後,依據JIS C 6481-1996,測定剝離銅箔時之剝離強度(gf/cm)。 [0031] 可溶性黏著層28之形成係亦可經由任何手法而進行。例如,如圖7所示,在形成可溶性黏著層28於多層層積體26上之後,層積補強薄片30亦可。但如圖8所示,從控制可溶性黏著層28之厚度的觀點及位置配合工程之簡略化的觀點,預先形成附有可溶性黏著層28補強薄片30,經由來自此複合板之轉印而層積可溶性黏著層28於多層層積體26者為佳。 [0032] 此情況,如圖9所示,藉由可溶性黏著層28而層積補強薄片30之工程係包含:(i)準備具備可溶性黏著層28於第1保護薄膜27上之複合薄膜31的工程(參照圖9(a)),和(ii)可溶性黏著層28則呈接觸於補強薄片30及/或多層層積體26地,將複合薄膜31,層積於補強薄片30及/或多層層積體26之工程(參照圖9(d)),和(iii)將第1保護薄膜27,自可溶性黏著層28剝離之工程(參照圖9(e))者為佳。如此,由將第1保護薄膜27作為支持體而使用者,可經由印刷而容易地形成點圖案等之期望的圖案者。作為構成第1保護薄膜27之材料的理想例係可舉出:聚乙烯,聚丙烯,聚乙烯對苯二甲酸酯,聚萘二甲酸乙二酯,聚醯亞胺,對位性聚苯乙烯薄膜,芳香族聚醯胺薄膜,改性聚苯醚薄膜,氟系薄膜,及液晶聚合物薄膜等。另外,對於第1保護薄膜27之可溶性黏著層28側表面係加以塗佈脫模劑亦可。 [0033] 另外,如圖9(b)所示,準備複合薄膜31之工程(i)係更含有設置第2保護薄膜29於複合薄膜31之可溶性黏著層28側的面之工程(參照圖9(b))亦可。如此作為所得到之複合薄膜31’係成為以第1保護薄膜27與第2保護薄膜29而夾層可溶性黏著層28之構成。此情況,對於複合薄膜31之補強薄片30及/或多層層積體26的層積前,如剝離第2保護薄膜29即可(參照圖9(c))。由將第2保護薄膜29作為對於可溶性黏著層28而言之保護層而使用者,可防止經由可溶性黏著層28之黏著性的變形或異物卷入者。作為構成第2保護薄膜29之材料的理想例係可舉出:聚乙烯,聚丙烯,聚乙烯對苯二甲酸酯,聚萘二甲酸乙二酯,聚醯亞胺,對位性聚苯乙烯薄膜,芳香族聚醯胺薄膜,改性聚苯醚薄膜,氟系薄膜,及液晶聚合物薄膜等。另外,對於第2保護薄膜29之可溶性黏著層28側表面係加以塗佈脫模劑亦可。 [0034] 使用第1保護薄膜27與第2保護薄膜29雙方之情況,可溶性黏著層28與第1保護薄膜27之接著力(例如,剝離強度)係較可溶性黏著層28與第2保護薄膜29之接著力(剝離強度)為高者為佳。由如此作為,成為可將第2保護薄膜29,較第1保護薄膜27優先地進行剝離之故,可安定保持第1保護薄膜27與可溶性黏著層28之密著狀態同時,可更容易且平順地剝離第2保護薄膜29者。另外,可溶性黏著層28與補強薄片30之接著力(例如,剝離強度)係較可溶性黏著層28與第1保護薄膜27之接著力(例如,剝離強度)為高者為佳。由如此作為,成為可將第1保護薄膜27,較補強薄片30優先地進行剝離之故,可安定保持可溶性黏著層28與補強薄片30之密著狀態同時,可更容易且平順地剝離第1保護薄膜27者。 [0035] 在使用層積板10之形態中,補強薄片30係維氏硬度則較基材12為低者為佳。經由此,在層積或剝離補強薄片30時,由補強薄片30本身彎曲者,可順利脫離在層積或剝離時會產生的應力,其結果,可有效果地防止乃至抑制包含基材12之多層層積體26之彎曲者。補強薄片30之維氏硬度係基材12之維氏硬度的2~99%者為佳,而更理想為6~90%,又理想為10~85%。理想係補強薄片30之維氏硬度為50~700HV,且基材12之維氏硬度為500~3000HV,更理想係補強薄片30之維氏硬度為150~550HV,且基材12之維氏硬度為550~2500HV,又更理想係補強薄片30之維氏硬度為200~500HV,且基材12之維氏硬度為600~2000HV。然而,在本說明書中,維氏硬度係依據記載於JIS Z 2244-2009之「維氏硬度試驗」而加以測定者。 [0036] 為做參考,將可成為候補之各種材料的維氏硬度HV,於以下例示:藍寶石玻璃(2300HV)、超硬合金(1700HV)、金屬陶瓷(1650HV)、石英(水晶)(1103HV)、SKH56(高速度工具鋼鋼材、高速鋼)(722HV)、強化玻璃(640HV)、SUS440C(不鏽鋼)(615HV)、SUS630(不鏽鋼)(375HV)、鈦合金60種(64合金)(280HV前後)、英高鎳(耐熱鎳合金)(150~280HV)、S45C(機械構造用碳鋼)(201~269HV)、赫史特合金(耐蝕鎳合金)(100~230HV)、SUS304(不鏽鋼)(187HV)、SUS430(不鏽鋼)(183HV)、鑄鐵(160~180HV)、鈦合金(110~150HV)、黃銅(80~150HV)、及青銅(50~100HV)。 [0037] 補強薄片30係依據JIS H 3130-2012之反覆彎曲式試驗而加以測定,彈性界限值Kb0.1
為100~1500N/mm2
者為佳,而更理想為150~1200N/mm2
、又更理想為200~1000N/mm2
。當為如此之區域內時,在層積或剝離補強薄片30時,由補強薄片30本身彎曲者,可順利脫離在層積或剝離時會產生的應力,其結果,可有效果地防止乃至抑制多層層積體26之彎曲者。另外,在層積或剝離時彎曲之補強薄片30則因可發揮其彈性而瞬時間返回呈本來的平坦形狀之故,可更有效果地維持多層層積體26的平坦性者。並且,由活用補強薄片30之彎曲及彈性者,可將加上有剝離力的補強薄片30,賦能於剝離方向(即,自多層層積體26遠離之方向),其結果,可更一層進行平順的剝離。 [0038] 為做參考,將對於可成為候補之各種材料之彈性界限值Kb0.1
,例示於以下的表1及2。 [0039][0040][0041] 補強薄片30之材質係未特別加以限定,但樹脂,金屬,玻璃,或此等之組合為佳。作為樹脂的例係可舉出環氧樹脂,聚醯亞胺樹脂,聚乙烯樹脂,及苯酚樹脂,而亦可為由如此之樹脂與纖維補強材所成之玻璃纖維膠片。作為金屬的例係從上述維氏硬度或彈性界限值Kb0.1
之觀點,可舉出不鏽鋼,銅合金(例如,青銅,磷青銅,銅鎳合金,銅鈦合金),但從耐藥品性的觀點,不鏽鋼則特別理想。補強薄片30之形態係只要可防止乃至抑制多層層積體26之彎曲,未限定於板狀,而亦可為薄膜,板,及箔的其他形態,而理想為薄片或板之形態。補強薄片30係亦可為加以層積此等的薄片,薄膜,板,及箔等之構成。作為補強薄片30之典型例係可舉出:金屬板,樹脂板(特別是硬質樹脂板),玻璃板。補強薄片30之厚度係從補強薄片30之強度保持及補強薄片30之操作容易性的觀點,理想為10μm~1mm,更理想為50~800μm、又更理想為100~600μm。補強薄片30為金屬板(例如,不鏽鋼板)之情況,在金屬板中,形成有可溶性黏著層28側之表面十點平均粗度Rz-jis(依據JIS B 0601-2001,而加以測定)係0.05~500μm為佳,而更理想為0.5~400μm、又更理想為1~300μm。當為如此之表面粗度時,經由因表面凹凸引起之定準效應,認為與可溶性黏著層28之密著性則提高,在可溶性黏著層28之剝離強度則提升。 [0042] 補強薄片30係具有開口部30a亦可。例如,可藉由開口部30a而使檢查用探針接觸於最表面的配線層而進行電性檢查者。另外,經由開口部30a之存在,亦可更一層促進溶解液對於對向區域F內的浸入者。開口部30a之形狀及尺寸係如因應目的而做適宜決定即可,而無特別加以限定。補強薄片30則具有開口部30a之情況,欲迴避經由開口部30a之存在的補強效果的降低,而於層積於多層層積體26之補強薄片30上,使未具有開口部之追加補強薄片(未圖示)接著亦可。由如此作為者,可更有效果地防止在基材12之剝離時的多層層積體26之彎曲。此情況,在基材12之剝離後,且電性檢查之前,如將追加補強薄片自多層層積體26剝離即可。另外,在電性檢查後,更以補強構件(未圖示)封塞開口部30a亦可,而由如此作為者,迴避經由開口部30a之補強效果的降低,更有效果地防止多層層積體26之彎曲,而成為經由此而可更容易地進行電子元件32之搭載。此情況,在電子元件32之搭載後,如將補強構件自多層層積體26剝離即可。 [0043] (4) 基材的剝離(任意工程)。 使用層積板10之情況,如圖2(e)所示,在補強薄片30之層積後,且補強薄片30之剝離前,自金屬層16,在剝離層14而剝離基材12者為佳。即,加以剝離除去基材12,密著金屬層(存在之情況),剝離補助層(存在之情況),及剝離層14。此剝離除去係經由物理性的剝離而加以進行者為佳。物理性的分離法係經由以手或治具,機械等,自聚集配線層而剝離基材12等之時而分離之手法。此時,由藉由可溶性黏著層28而密著之補強薄片30則補強多層層積體26者,可防止多層層積體26局部性產生大彎曲者。即,補強薄片30係加以剝離基材12之間,欲抵抗於剝離力而補強多層層積體26,可更一層有效地防止乃至抑制彎曲者。如此作為,可迴避有經由彎曲而引起之聚集配線層內部的配線層之斷線或剝離,而提升多層配線層之連接信賴性者。另外,由有效果地防止乃至抑制彎曲者,可提升多層配線層表面的平坦性(共面性)者。 [0044] 特別是可溶性黏著層28係剝離強度亦較剝離層14為高之情況,在剝離基材12時,更有效果地迴避在可溶性黏著層28之剝離同時,在剝離層14之剝離則更一層容易進行。隨之,藉由可溶性黏著層28而密著於多層層積體26之補強薄片30係在基材12之剝離時,亦可更一層安定地保持密著狀態者。 [0045] (5) 金屬層之蝕刻除去(任意工程) 經由期望,如圖2(f)所示,在補強薄片30之剝離前,經由蝕刻而除去金屬層16。金屬層16之蝕刻係如依據沖洗蝕刻等之公知的手法而進行即可。 [0046] 特別是如前述,如此在形成聚集配線層之後,進行晶片的安裝之處理係稱為RDL-First法的手法。如根據此工法,在進行晶片的安裝之前,可進行多層配線層18之外觀檢查或電性檢查之故,可避開各配線層之不良部分而進對於良品部分安裝晶片。其結果,RDL-First法在可迴避晶片之浪費的點,與逐次層積配線層於晶片表面之工法的Chip-First法等做比較時,經濟上而為有利。如此作為,在印刷配線板之製造處理(特別是RDL-First法)中,由進行對於晶片安裝前之配線層的外觀檢查或電性檢查者,可提升產品產率者。特別是在本發明之製造方法中,由採用可溶性黏著層28及補強薄片30者,可經由彎曲的降低而確保多層層積體26兩面之期望的平坦性,其結果,成為可進行為了電性檢查之正確的探測。 [0047] (6) 第1配線層之表面處理(任意工程) 上述工程之後,因應必要,對於第1配線層18的表面,係加以形成焊接光阻層,表面金屬處理層(例如、OSP (Organic Solderbility Preservative)處理層、鍍Au層,鍍Ni-Au層等),電子元件搭載用之金屬支柱,及/或焊錫凸塊等。 [0048] (7) 電子元件的搭載(任意工程)。 經由期望,如圖2(g)所示,在補強薄片30之層積後(或者金屬層16之除去或之後的電性檢查後),且在補強薄片30之剝離前,於與多層層積體26之補強薄片30相反側的表面,搭載電子元件32。在本發明之製造方法中,係由採用可溶性黏著層28及補強薄片30者,可在多層層積體26之表面(例如,作為埋入電極而包含第1配線層18之聚集配線層表面)而實現對於電子元件32之搭載成為有利之優越的表面平坦性(共面性)者。即,在電子元件32之搭載時,多層層積體26係未經由補強薄片30而局部性產生大彎曲而完成。其結果,可提高電子元件搭載之連接產率者。 [0049] 作為電子元件32的例,係可舉出半導體元件,晶片電容器,阻抗體等。作為電子元件搭載方式的例,係可舉出覆晶安裝方式,晶片接合方式等。覆晶安裝方式係進行電子元件32之安裝墊片,和第1配線層18之接合的方式。對於此安裝墊片上係如圖2(g)所示,加以形成柱狀電極(支柱)或焊錫凸塊34等亦可,而在安裝前,於含有第1配線層18之表面,貼上封閉樹脂膜36之NCF(Non-Conductive Film)等亦可。接合係使用焊錫等之低熔點金屬而加以進行者為佳,但使用向異導電性薄膜等亦可。晶片接合接著方式係對於第1配線層18而言,接著與電子元件32之安裝墊片面相反側的面之方式。對於此接著係使用含有熱硬化樹脂與熱傳導性的無機充填物之樹脂組成物的電糊或薄膜者為佳。無論作為任何方式,電子元件32係如圖2(g)所示地,由封閉材38所封閉之情況則在更可提升多層層積體26與電子元件32的層積體全體剛性的點而為理想。 [0050] (8) 可溶性黏著層之溶解或軟化 使可溶解可溶性黏著層28之液體浸入於非占有區域U,使可溶性黏著層28溶解或軟化。軟化係典型上,可經由可溶性黏著層28之膨潤而加以實現。如前述,溶解液係可使用可溶解可溶性黏著層28之液體之故,可溶性黏著層28係由與溶解液接觸者,至少部分性溶解,經由此而溶解液可浸透於可溶性黏著層28。並且,與有關之溶解液之接觸或浸透係帶來可溶性黏著層28之溶解或軟化,將多層層積體26與補強薄片30之密著力減弱或作為無力化。如此作為,使用溶解剝離或依據此之手法,可極為容易地進行在以下工程中之補強薄片30的剝離者。即,可將賦予於多層層積體26之應力作為最小化之同時,以極短時間而進行達成作用之補強薄片30的剝離者。 [0051] 溶解液係如為可溶解可溶性黏著層28之液體,並無特別加以限定,而可使用各種組成乃至液性的藥液。例如,對於可溶性黏著層28含有酸可溶型樹脂之情況,溶解液係如使用酸溶液即可。作為如此之酸溶液的例係可舉出:鹽酸,硝酸,硫酸,及氟酸等。另外,對於可溶性黏著層28含有鹼可溶型樹脂之情況,溶解液係如使用鹼溶液即可。作為如此之鹼溶液的例係可舉出:羧酸鹽(乙酸乙酯等),NaHCO3
水溶液、Na2
CO3
水溶液、NaOH水溶液等。 [0052] (9) 補強薄片的剝離 如圖3(h)及(i)所示,自多層層積體26,在可溶性黏著層28之位置而剝離補強薄片30,得到多層配線板40。補強薄片30係因可溶性黏著層28之溶解或軟化引起而成為極容易剝離之狀態(或根據情況而部分性產生自然剝離)之故,經由以手或治具,機械等,自多層層積體26而輕輕剝離補強薄片30之時,可極為容易進行分離者。隨之,可將賦予於多層層積體26之應力作為最小化之同時,以極短時間而進行補強薄片30的剝離者。由如此作為,將加上於多層層積體26之應力作為最小化者,可有效果地迴避在多層配線板40之配線的斷線或安裝部的斷線者。另外,為了降低上述應力而即使考慮使用可溶性黏著層28,亦對此對於溶劑剝離需要相當多的時間,而如根據本發明之方法,由活用開口部30a而促進與溶解液的接觸或浸透者,可實現對於補強薄片30之剝離所需的時間之飛躍性的縮短化者。 [0053] 特別是在使用層積板10之形態中,可溶性黏著層28則本來具有較剝離層14為高之剝離強度的情況,可溶性黏著層28係如未作為特別的處置時,可說是較剝離層14不易剝離。但在本發明之方法中,經由與溶解液的接觸或浸透,可溶性黏著層28則產生溶解或軟化,而多層層積體26與補強薄片30的密著力則減弱或產生無力化之結果,可容易地進行補強薄片30的剝離者。 [0054] (10) 其他 基材12及/或補強薄片30之至少一邊則自聚集配線層的端部延伸出者為佳。由如此作為者,在剝離基材乃至補強薄片時,成為可把持端部,而有可容易進行剝離的利點。 [0055] 層積板 如前述,在本發明之方法中,根據期望所使用之層積板10係依序具備:基材12,剝離層14及金屬層16。層積板10係亦可為所謂附有載體銅箔之形態。 [0056] 基材12的材質係無特別加以限定,亦可為玻璃,陶瓷,樹脂,及金屬之任一。另外,基材12之形態亦無特別加以限定,亦可為薄片,薄膜,板,及箔之任一。另外,基材12係亦可為加以層積此等的薄片,薄膜,板,及箔等之構成。例如,基材12係可作為玻璃板,陶瓷板,金屬板等之具有剛性的支持體而發揮機能之構成亦可,而亦可為金屬箔或樹脂薄膜等之未具有剛性的形態。作為基材12之理想的例係可舉出:金屬板,玻璃板,陶瓷板(板料),金屬板及玻璃纖維膠片之層積體,塗佈有接著劑之金屬板,樹脂板(特別是硬質樹脂板)。作為基材12之金屬的理想例係可舉出:銅,鈦,鎳,不鏽鋼,鋁等。作為陶瓷之理想的例係可舉出:氧化鋁,鋯,氮化矽,氮化鋁(精密陶瓷)等。作為樹脂之理想的例係可舉出:環氧樹脂,醯胺樹脂,聚醯亞胺樹脂,隆樹脂,液晶聚合物,PEEK樹脂、聚醯亞胺樹脂,聚醯胺醯亞胺樹脂,聚醚碸樹脂,聚苯硫醚樹脂,PTFE樹脂、ETFE樹脂等。更理想係從伴隨搭載電子元件時之加熱的接合支持體的彎曲防止之觀點,熱膨脹係數(CTE)為不足25ppm/K(理想為1.0~23ppm/K、更理想為1.0~15ppm/K、又更理想為1.0~10ppm/K)之材料,而作為如此之材料的例係可舉出:如上述之各種樹脂(特別是聚醯亞胺樹脂,液晶聚合物等之低熱膨脹樹脂),由如上述之各種樹脂與玻璃纖維所形成之玻璃纖維膠片,玻璃及陶瓷等。另外,從操作性或晶片安裝時之平坦性保持的觀點,基材12係維氏硬度為500~3000HV者為佳,而更理想為550~2500HV、又更理想為600~2000HV。 [0057] 作為滿足此等特性之材料,基材12係由樹脂薄膜,玻璃或陶瓷而加以構成者為佳,更理想為由玻璃或陶瓷所構成,特別理想為由玻璃所構成。例如為玻璃板。作為基材12而使用玻璃之情況,輕量,且熱膨脹係數為低,絕緣性為高,剛直,表面為平坦之故,有著可將金屬層16之表面作為極度平滑等之利點。另外,基材12為玻璃之情況,在電子元件搭載時具有有利的表面平坦性(共面性)的點,印刷配線板製造工程之無電鍍銅或各種電鍍工程中,有著具有耐藥品性的點等之利點。作為構成基材12之玻璃的理想例係可舉出:石英玻璃,硼矽酸玻璃,無鹼玻璃,鈉鈣玻璃,矽酸鋁玻璃,及此等之組合,而特別理想為無鹼玻璃。無鹼玻璃係將二氧化矽,氧化鋁,氧化硼,及氧化鈣或氧化鋇等之鹼土類金屬氧化物作為主成分,更含有硼酸,實質上未含有鹼金屬的玻璃者。此無鹼玻璃係在自0℃至350℃為止之廣溫度帶域中,熱膨脹係數則在3~5ppm/K之區域為低而安定之故,作為電子元件而搭載半導體晶片時,有著可將玻璃的彎曲作為最小限度之利點。 [0058] 基材12的厚度係100~2000μm為佳,更理想為300~1800μm、又更理想為400~1100μm。當為如此區域內之厚度時,確保對於操作未帶來障礙之適當的強度同時,可實現印刷配線板之薄型化,及在電子構件搭載時產生的彎曲之降低者。 [0059] 基材12之剝離層14側(對於存在的情況係密著金屬層側)的表面係依據JIS B 0601-2001而加以測定,具有0.1~70nm之算術平均粗度Ra者為佳,更理想為0.5~60nm、又更理想為1.0~50nm、特別理想為1.5~40nm、最為理想為2.0~30nm。如此,算術平均粗度越小,在與金屬層16之剝離層14相反側的表面(金屬層16之外側表面)中可期望帶來低算術平均粗度Ra,經由此,在使用層積板10所製造之印刷配線板中,成為適合於線/空間(L/S)為13μm以下/13μm以下(例如,12μm/12μm~1μm/1μm)程度為止形成高度加以細微化之配線圖案者。 [0060] 經由期望,層積板10係具有密著金屬層及/或剝離補助層於基材12之剝離層14側表面亦可,而理想為依序具有密著金屬層及剝離補助層。 [0061] 經由期望而加以設置之密著金屬層係從確保與基材12之密著性的點,由選自Ti、Cr及Ni所成的群之至少1種的金屬加以構成的層者為佳,而亦可為純金屬,而合金亦可。構成密著金屬層之金屬係含有因原料成分或成膜工程等引起不可避免不純物亦可。另外,雖未特別加以限制者但在密著金屬層之成膜後暴露於大氣之情況,因此等而引起而混入的氧之存在係被容許。密著金屬層係經由濺鍍等之氣相法而加以形成的層者為佳。密著金屬層係經由使用金屬標靶的射頻磁控濺鍍法而加以形成的層則在可提升膜厚分布的均一性的點而特別理想。密著金屬層之厚度係5~500nm者為佳,而更理想為10~300nm、又更理想為18~200nm、特別理想為20~150nm。此厚度係作為經由以透過型電子顯微鏡之能量分散型X線分光分析器(TEM-EDX)而分析層剖面而加以測定的值。 [0062] 經由所期望而加以設置之剝離補助層係從將與剝離層14之剝離強度控制為期望的值的點,以銅而加以構成的層者為佳。構成剝離補助層之銅係含有因原料成分或成膜工程等引起不可避免不純物亦可。另外,在剝離補助層成膜前後暴露於大氣之情況,因此而引起而混入之氧的存在係被容許。但並無特別加以限制者,但密著金屬層與剝離補助層係未有大氣開放而以連續加以製膜者為佳。剝離補助層係經由濺鍍等之氣相法而加以形成的層者為佳。剝離補助層係經由使用銅標靶的射頻磁控濺鍍法而加以形成的層之情況則在可提升膜厚分布的均一性的點而特別理想。剝離補助層之厚度係5~500nm者為佳,而更理想為10~400nm、又更理想為15~300nm、特別理想為20~200nm。此厚度係作為經由以透過型電子顯微鏡之能量分散型X線分光分析器(TEM-EDX)而分析層剖面而加以測定的值。 [0063] 剝離層14係只要為可進行基材12的剝離的層,材質係未特別加以限定。例如,剝離層14係可由作為附有載體銅箔之剝離層所採用之公知的材料而加以構成者。剝離層14係亦可為有機剝離層及無機剝離層之任一。作為使用於有機剝離層之有機成分的例,可舉出含氮有機化合物,含硫磺有機化合物,羧酸等。作為含氮有機化合物的例係可舉出:三唑化合物,咪唑化合物等。另一方面,作為使用於無機剝離層之無機成分的例,係可舉出Ni、Mo、Co、Cr、Fe、Ti、W、P、Zn之至少一種類以上的金屬氧化物、金屬與非金屬的混合物,碳層等。在此等之中,特別是剝離層14係主要含有碳所成的層則從剝離容易性或膜形成性的點等而為理想,更理想係主要由碳或碳化氫所成的層,又更理想係硬質碳膜之非晶質碳,或碳-氮混合物所成。此情況,剝離層14(即,碳層)係經由XPS而加以測定之碳濃度為60原子%以上者為佳,更理想為70原子%以上、又更理想為80原子%以上、特別理想為85原子%以上。碳濃度之上限值係未特別加以限定,而亦可為100原子%,但現實為98原子%以下。剝離層14(特別是碳層)係可含有不可避免不純物(例如,來自環境等之周圍環境的氧,碳,氫等)。另外,對於剝離層14(特別是碳層)係因金屬層16之成膜手法引起而有混入金屬原子。碳係與基材12之相互擴散性及反應性為小,而即使受到在超過300℃之溫度的沖壓加工等,亦可防止在金屬層16(例如,銅箔層)與接合界面之間的經由高溫加熱之金屬結合的形成,而維持基材12之剝離除去為容易之狀態者。此剝離層14亦經由濺鍍等之氣相法而加以形成的層則從抑制非晶質碳中的過度之不純物的點,與前述之密著金屬層及/或剝離補助層的成膜之連續生產性的點等而為理想。剝離層14之厚度係1~20nm為佳,而更理想為1~10nm。此厚度係作為經由以透過型電子顯微鏡之能量分散型X線分光分析器(TEM-EDX)而分析層剖面而加以測定的值。 [0064] 從極力降低將剝離層14進行剝離時,對於第1配線層18之應力集中,將剝離工程作為容易者的點,剝離層14之剝離強度係1~30gf/cm為佳,更理想為3~20gf/cm、又更理想為4~15gf/cm。剝離層14之剝離強度係由如以下作為所測定者。首先,於基材12上形成剝離層14,再於其上方形成作為金屬層16之銅層的層積板,於其上方形成厚度18μm電性鍍銅層,形成覆銅層積板。之後,依據JIS C 6481-1996,測定剝離與金屬層16成為一體之電性鍍銅層時之剝離強度(gf/cm)。 [0065] 剝離層14之剝離強度係可經由控制剝離層14之厚度者,選擇剝離層14之組成者等而進行控制。 [0066] 金屬層16係由金屬所構成的層,理想係含有可供電至後述之第1配線層18之供電層。金屬層16乃至供電層係可由任何方法而加以製造者,例如,經由無電解鍍銅法及電解鍍銅法等之濕式成膜法,濺鍍及真空蒸鍍等之物理氣相成膜法,化學氣相成膜,或此等之組合而形成之銅箔即可。構成供電層之理想的金屬係為銅,因此,理想的供電層係可為極薄銅層。特別理想之供電層係從容易對應於經由極薄化之微距化的觀點,經由濺鍍法或真空蒸鍍等之氣相法而加以形成的銅層,而最為理想係經由濺鍍法而加以製造之銅層。另外,極薄銅層係無粗化的銅層者為佳,但只要對於印刷配線板製造時之配線圖案形成未帶來障礙,而經由預備粗化或軟蝕刻處理或洗淨處理,氧化還原處理而產生有二次性的粗化者亦可。構成金屬層16之供電層(例如,極薄銅層)的厚度係未特別加以限定,但為了對應於如上述之微距化,係50~3000nm者為佳,而更理想為70~2500nm、又更理想為80~2000nm、特別理想為90~1500nm、又特別理想為120~1000nm、最為理想為150~500nm。如此區域內之厚度的供電層(例如,極薄銅層)係經由濺鍍法而加以製造者則在成膜厚度的面內均一性,或以板狀或滾筒狀之生產性的觀點而為理想。 [0067] 與金屬層16之剝離層14相反側的表面(金屬層16之外側表面)則依據JIS B 0601-2001而加以測定,具有1.0~100nm之算術平均粗度Ra者為佳,更理想為2.0~40nm、又更理想為3.0~35nm、特別理想為4.0~30nm、最為理想為5.0~15nm。如此,算術平均粗度越小,在使用層積板10而加以製造之印刷配線板中,成為適合線/空間(L/S)則至13μm以下/13μm以下(例如,12μm/12μm~1μm/1μm)程度為止,形成高度加以細微化之配線圖案者。然而,如此之平滑的表面情況,對於算術平均粗度Ra之測定係採用非接觸式表面粗度測定法者為佳。 [0068] 金屬層16係具有2層以上的層構成亦可。例如,金屬層16係加上於上述之供電層,於供電層之剝離層14側的面,具有反射防止層亦可。即,金屬層16係亦可為含有供電層及反射防止層者。反射防止層係由選自Cr、W、Ta、Ti、Ni及Mo所成的群之至少1種金屬而加以構成者為佳。反射防止層係至少供電層側的表面則為金屬粒子之集合體者為佳。反射防止層係亦可為全體由金屬粒子之集合體而加以構成之層構造,而含有由金屬粒子之集合體所成的層與於其下部並非粒子狀的層之複數層的構造亦可。構成反射防止層之供電層側的表面的金屬粒子之集合體係因其金屬質之材質及粒狀形態引起而呈現期望的暗色,其暗色則在與由銅所構成之配線層之間帶來視覺上的對比,其結果,使在畫像檢查(例如,在自動畫像檢查(AOI))之辨識性提升。即,反射防止層的表面係因金屬粒子的凸形狀引起,光線則不規則反射而辨識為黑。並且,反射防止層係對於與剝離層14之適度的密著性與剝離性,與供電層之密著性亦為優越,亦對於在光阻層形成時,對於顯像液的耐剝離性為優越。從如此之對比及辨識性提升的觀點,反射防止層之供電層側的表面之光澤度Gs(60°)係為500以下為佳,更理想為450以下、又更理想為400以下、特別理想為350以下、最為理想為300以下。光澤度Gs(60°)之下限值係越低越佳之故,而並無特別加以限定,但反射防止層之供電層側的表面之光澤度Gs(60°)係現實上係100以上,而更現實上係150以上。然而,經由粗化粒子之畫像解析的鏡面光澤度Gs(60°)係依據JIS Z 8741-1997(鏡面光澤度-測定方法)而可使用市售之光澤度計而測定。 [0069] 另外,從對比及辨識性的提升,以及沖洗蝕刻之均一性提升的觀點,反射防止層之供電層側的表面係由經由SEM畫像解析而加以決定之投影面積圓相當口徑為10~100nm之金屬粒子的集合體所構成者為佳,而更理想為25~100nm、又更理想為65~95nm。如此之投影面積圓相當口徑的測定係經由掃描型電子顯微鏡,以特定的倍率(例如,50000倍)而攝影反射防止層的表面,可再經由所得到之SEM像的畫像解析而進行者。具體而言,採用使用市售的畫像解析式粒度分布軟件(例如,Mountech Co., Ltd.公司製、Mac-VIEW)所測定之投影面積圓相當口徑的相加平均值。 [0070] 反射防止層係由選自Cr、W、Ta、Ti、Ni及Mo之至少1種金屬而加以構成,而理想係由選自Ta、Ti、Ni及Mo之至少1種金屬,更理想係由選自Ti、Ni及Mo之至少1種金屬,最理想係由Ti而加以構成。此等金屬係亦可為純金屬,或合金。無論如何,此等金屬係本質上未被氧化(本質上並非金屬氧化物)之情況則提升與Cu的視覺上對比,呈現期望的暗色之故而為理想,具體而言,反射防止層之氧含有量為0~15原子%為佳,而更理想為0~13原子%、又更理想為1~10原子%。無論如何作為,上述金屬係因具有對於銅沖洗蝕刻液而言不會溶解之性質之故,其結果,可對於銅沖洗蝕刻液而言呈現優越之耐藥品性者。反射防止層之厚度係1~500nm者為佳,而更理想為10~300nm、又更理想為20~200nm、特別理想為30~150nm。
[0071]
10‧‧‧層積板
12‧‧‧基材
14‧‧‧剝離層
16‧‧‧金屬層
18‧‧‧配線層
20‧‧‧絕緣層
26‧‧‧多層層積體
27‧‧‧第1保護薄膜
28‧‧‧可溶性黏著層
29‧‧‧第2保護薄膜
30‧‧‧補強薄片
30a‧‧‧開口部
30b‧‧‧補強區域
30c‧‧‧通液性區域
31‧‧‧複合薄膜
32‧‧‧電子元件
40‧‧‧多層配線板
[0012] 圖1係顯示在本發明之製造方法中,自層積板的準備至補強薄片的層積為止之工程的工程流程圖。 圖2係顯示在本發明之製造方法中,自基材的剝離至電子元件的搭載為止之工程的工程流程圖。 圖3係顯示在本發明之製造方法中,自補強薄片的剝離至多層配線板之完成為止之工程的工程流程圖。 圖4係模式性顯示由可溶性黏著層所被覆之占有區域,和未由可溶性黏著層所被覆之非占有區域的圖。 圖5係顯示由可溶性黏著層所被覆之占有區域之其他形狀的一例圖。 圖6係顯示由可溶性黏著層所被覆之占有區域之其他形狀的其他一例圖。 圖7係顯示形成可溶性黏著層之手法的一例圖。 圖8係顯示形成可溶性黏著層之手法的其他一例圖。 圖9係顯示形成附有可溶性黏著層浸入補強薄片之步驟的一例工程流程圖。
Claims (13)
- 一種多層配線板之製造方法,其特徵為包含:交互形成配線層及絕緣層而製作多層層積體的工程, 和於前述多層層積體一方的面,藉由可溶性黏著層而層積補強薄片之工程,即於前述補強薄片與前述多層層積體所對向之對向區域內,存在有未形成有可溶性黏著層之非占有區域的工程, 和使可溶解前述可溶性黏著層之液體,浸入於前述非占有區域,使前述可溶性黏著層溶解或軟化的工程, 和自前述多層層積體,在前述可溶性黏著層之位置剝離前述補強薄片而得到多層配線板之工程者。
- 如申請專利範圍第1項記載之多層配線板之製造方法,其中,對於前述對向區域之面積而言之前述非占有區域的比例則為20~90面積%。
- 如申請專利範圍第1項或第2項記載之多層配線板之製造方法,其中,由前述可溶性黏著層所被覆之各個占有區域的外接圓之直徑則為0.1~10mm,而前述非占有區域則圍繞前述各個占有區域之周圍。
- 如申請專利範圍第1項或第2項記載之多層配線板之製造方法,其中,前述可溶性黏著層的厚度則為0.5~50μm。
- 如申請專利範圍第1項或第2項記載之多層配線板之製造方法,其中,前述可溶性黏著層則含有溶液可溶型樹脂。
- 如申請專利範圍第1項或第2項記載之多層配線板之製造方法,其中,前述可溶性黏著層則含有酸可溶型樹脂或鹼可溶型樹脂。
- 如申請專利範圍第1項或第2項記載之多層配線板之製造方法,其中,在前述補強薄片之層積後,且前述補強薄片之剝離前,更包含:於前述多層層積體的與補強薄片相反側的表面,搭載電子元件之工程。
- 如申請專利範圍第1項或第2項記載之多層配線板之製造方法,其中,前述補強薄片則具有開口部。
- 如申請專利範圍第1項或第2項記載之多層配線板之製造方法,其中,藉由前述可溶性黏著層而層積補強薄片之工程則包含: 準備於第1保護薄膜上具備前述可溶性黏著層之複合薄膜的工程, 和前述可溶性黏著層則呈接觸於前述補強薄片及/或前述多層層積體地,層積前述複合薄膜於前述補強薄片及/或前述多層層積體之工程, 和自前述可溶性黏著層剝離前述第1保護薄膜之工程。
- 如申請專利範圍第9項記載之多層配線板之製造方法,其中,準備前述複合薄膜之工程則更具備:設置第2保護薄膜於前述複合薄膜之前述可溶性黏著層側的面之工程, 前述方法則更包含:在前述複合薄膜之對前述補強薄片及/或前述多層層積體的層積前,剝離前述第2保護薄膜之工程。
- 如申請專利範圍第1項或第2項記載之多層配線板之製造方法,其中,前述多層層積體則加以製作於依序具備基材,剝離層及金屬層之層積板之前述金屬層的表面者。
- 如申請專利範圍第11項記載之多層配線板之製造方法,其中,在前述補強薄片之層積後,且前述補強薄片之剝離前,更包含:自前述金屬層,以前述剝離層剝離前述基材之工程者。
- 如申請專利範圍第11項記載之多層配線板之製造方法,其中,在前述補強薄片之剝離前,更包含:經由蝕刻而除去前述金屬層之工程者。
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2017
- 2017-11-24 TW TW106140872A patent/TWI745494B/zh active
- 2017-11-24 US US16/463,905 patent/US20190292415A1/en not_active Abandoned
- 2017-11-24 WO PCT/JP2017/042290 patent/WO2018097266A1/ja active Application Filing
- 2017-11-24 CN CN201780073228.5A patent/CN109997418B/zh active Active
- 2017-11-24 JP JP2018552985A patent/JP7208011B2/ja active Active
- 2017-11-24 WO PCT/JP2017/042289 patent/WO2018097265A1/ja active Application Filing
- 2017-11-24 TW TW106140868A patent/TWI829627B/zh active
- 2017-11-24 KR KR1020197013791A patent/KR102493697B1/ko active IP Right Grant
- 2017-11-24 JP JP2018525803A patent/JP6496882B2/ja active Active
- 2017-11-24 CN CN201780073227.0A patent/CN110023435B/zh active Active
- 2017-11-24 KR KR1020197013844A patent/KR102444584B1/ko active IP Right Grant
- 2017-11-24 US US16/463,562 patent/US11525073B2/en active Active
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2019
- 2019-01-29 JP JP2019013266A patent/JP2019077884A/ja active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11393746B2 (en) | 2020-03-19 | 2022-07-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Reinforcing package using reinforcing patches |
TWI773178B (zh) * | 2020-03-19 | 2022-08-01 | 台灣積體電路製造股份有限公司 | 封裝件及其製造方法 |
US11728256B2 (en) | 2020-03-19 | 2023-08-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Reinforcing package using reinforcing patches |
Also Published As
Publication number | Publication date |
---|---|
KR20190087422A (ko) | 2019-07-24 |
CN110023435A (zh) | 2019-07-16 |
KR102444584B1 (ko) | 2022-09-20 |
WO2018097266A1 (ja) | 2018-05-31 |
JPWO2018097265A1 (ja) | 2019-10-17 |
JP7208011B2 (ja) | 2023-01-18 |
CN110023435B (zh) | 2021-09-10 |
JP6496882B2 (ja) | 2019-04-10 |
KR102493697B1 (ko) | 2023-02-01 |
TWI829627B (zh) | 2024-01-21 |
WO2018097265A1 (ja) | 2018-05-31 |
US20190378728A1 (en) | 2019-12-12 |
TWI745494B (zh) | 2021-11-11 |
CN109997418B (zh) | 2023-05-05 |
CN109997418A (zh) | 2019-07-09 |
TW201826412A (zh) | 2018-07-16 |
KR20190088470A (ko) | 2019-07-26 |
US11525073B2 (en) | 2022-12-13 |
JP2019077884A (ja) | 2019-05-23 |
JPWO2018097266A1 (ja) | 2018-11-22 |
US20190292415A1 (en) | 2019-09-26 |
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