TW201807189A - 阻劑之剝離液 - Google Patents

阻劑之剝離液 Download PDF

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Publication number
TW201807189A
TW201807189A TW106109377A TW106109377A TW201807189A TW 201807189 A TW201807189 A TW 201807189A TW 106109377 A TW106109377 A TW 106109377A TW 106109377 A TW106109377 A TW 106109377A TW 201807189 A TW201807189 A TW 201807189A
Authority
TW
Taiwan
Prior art keywords
resist
manufacturing
stripping solution
present
patent application
Prior art date
Application number
TW106109377A
Other languages
English (en)
Chinese (zh)
Inventor
庄野浩己
新城沙耶加
Original Assignee
傑希優股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 傑希優股份有限公司 filed Critical 傑希優股份有限公司
Publication of TW201807189A publication Critical patent/TW201807189A/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
TW106109377A 2016-05-13 2017-03-21 阻劑之剝離液 TW201807189A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016-096955 2016-05-13
JP2016096955 2016-05-13

Publications (1)

Publication Number Publication Date
TW201807189A true TW201807189A (zh) 2018-03-01

Family

ID=60267145

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106109377A TW201807189A (zh) 2016-05-13 2017-03-21 阻劑之剝離液

Country Status (5)

Country Link
JP (1) JPWO2017195453A1 (ja)
KR (1) KR20190006483A (ja)
CN (1) CN109074005A (ja)
TW (1) TW201807189A (ja)
WO (1) WO2017195453A1 (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111448521A (zh) * 2017-12-07 2020-07-24 株式会社杰希优 抗蚀剂的剥离液
WO2019143202A1 (ko) * 2018-01-19 2019-07-25 주식회사 엠티아이 다이싱 공정용 보호코팅제 박리용 박리제
KR102224907B1 (ko) 2018-04-17 2021-03-09 엘티씨 (주) 드라이필름 레지스트 박리액 조성물
CN115066104A (zh) * 2022-07-09 2022-09-16 南通群安电子材料有限公司 针对厚光阻抗蚀剂的剥除液

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4224651B2 (ja) * 1999-02-25 2009-02-18 三菱瓦斯化学株式会社 レジスト剥離剤およびそれを用いた半導体素子の製造方法
JP2002062668A (ja) * 2000-08-14 2002-02-28 Mitsubishi Gas Chem Co Inc フォトレジストの剥離方法
JP4035701B2 (ja) * 2002-03-12 2008-01-23 三菱瓦斯化学株式会社 レジスト剥離剤及びその使用方法
US9217929B2 (en) * 2004-07-22 2015-12-22 Air Products And Chemicals, Inc. Composition for removing photoresist and/or etching residue from a substrate and use thereof
JP2009075285A (ja) * 2007-09-20 2009-04-09 Fujifilm Corp 半導体デバイスの剥離液、及び、剥離方法
WO2009058181A2 (en) * 2007-10-31 2009-05-07 Ekc Technology, Inc. Compounds for photoresist stripping
CN101226346B (zh) * 2007-12-27 2010-06-09 周伟 光致抗蚀剂的脱膜工艺及在该工艺中使用的第一组合物、第二组合物和脱膜剂水溶液
CN101354543B (zh) * 2008-07-29 2011-04-20 广东东硕科技有限公司 一种褪菲林液
US20120073607A1 (en) * 2010-09-27 2012-03-29 Eastman Chemical Company Polymeric or monomeric compositions comprising at least one mono-amide and/or at least one diamide for removing substances from substrates and methods for using the same
JP5764899B2 (ja) 2010-09-30 2015-08-19 凸版印刷株式会社 アルカリ剥離液の再生装置および方法
JP2013183080A (ja) 2012-03-02 2013-09-12 Mitsubishi Gas Chemical Co Inc レジスト剥離液の劣化抑制方法、レジスト剥離方法及びシステム
KR101420571B1 (ko) * 2013-07-05 2014-07-16 주식회사 동진쎄미켐 드라이필름 레지스트 박리제 조성물 및 이를 이용한 드라이필름 레지스트의 제거방법
JP6277511B2 (ja) * 2013-10-18 2018-02-14 パナソニックＩｐマネジメント株式会社 レジスト剥離液
JP6200289B2 (ja) * 2013-11-18 2017-09-20 富士フイルム株式会社 半導体基板の処理液、処理方法、これらを用いた半導体基板製品の製造方法

Also Published As

Publication number Publication date
CN109074005A (zh) 2018-12-21
JPWO2017195453A1 (ja) 2019-04-04
WO2017195453A1 (ja) 2017-11-16
KR20190006483A (ko) 2019-01-18

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