TW201807189A - Remover liquid for resist - Google Patents

Remover liquid for resist Download PDF

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Publication number
TW201807189A
TW201807189A TW106109377A TW106109377A TW201807189A TW 201807189 A TW201807189 A TW 201807189A TW 106109377 A TW106109377 A TW 106109377A TW 106109377 A TW106109377 A TW 106109377A TW 201807189 A TW201807189 A TW 201807189A
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resist
manufacturing
stripping solution
present
patent application
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TW106109377A
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Chinese (zh)
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庄野浩己
新城沙耶加
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傑希優股份有限公司
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

Provided is a remover liquid for resists which is characterized by containing a quaternary ammonium salt, an alkanolamine, and an aliphatic amine. Even when the remover liquid is used over days and carbonic acid dissolves therein with a lapse of the days, the remover liquid is less apt to deteriorate in performance.

Description

阻劑之剝離液 Resist stripping solution

本發明關於一種可由施加阻劑的基材將阻劑剝離之阻劑之剝離液。 The present invention relates to a stripping solution of a resist that can be peeled off from a resist-applied substrate.

在印刷電路板的製造中,主要是半加成法中,所使用的阻劑(乾薄膜)的剝離液,隨著微細配線化,採用了胺系的剝離液。 In the manufacture of printed circuit boards, the stripping solution of the resist (dry film) used in the semi-additive method is mainly an amine-based stripping solution with fine wiring.

然而,已知以往的胺系阻劑剝離液中,隨著空氣中二氧化碳的溶解,碳酸鹽類會累積,剝離性能降低。 However, it is known that carbonates accumulate in the conventional amine-based barrier agent stripping solution as carbon dioxide in the air dissolves, and the peeling performance decreases.

因此,為了解決此剝離性能降低的問題,有文獻報告了將剝離液電解再生、並將去除二氧化碳的空氣送入剝離處理室,而抑制剝離液的性能降低等的技術(專利文獻1、2)。 Therefore, in order to solve the problem of lowering the peeling performance, there have been reports in the literature on technologies such as electrolytically regenerating the peeling liquid and sending carbon dioxide-removed air into the peeling processing chamber to suppress the degradation of the peeling liquid performance (Patent Documents 1 and 2) .

〔先前技術文獻〕 [Previous Technical Literature] 〔專利文獻〕 [Patent Literature]

[專利文獻1]日本特開2012-79830號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2012-79830

[專利文獻2]日本特開2013-183080號公報 [Patent Document 2] Japanese Patent Laid-Open No. 2013-183080

然而,在這些技術中,無法防止碳酸溶解於阻劑的剝離液中,因此本發明的課題為提供一種即使碳酸溶解性能也不易降低的剝離液。 However, in these techniques, it is impossible to prevent carbonic acid from being dissolved in the stripping solution of the resist. Therefore, an object of the present invention is to provide a stripping solution that is not easily reduced even if the carbonic acid dissolving performance is not easily reduced.

本發明人等為了解決上述課題而鑽研的結果,發現了藉由使用構造不同的兩種胺作為目前阻劑之剝離液中所使用的胺,即使碳酸溶解,性能也不會像以往的剝離液般降低,而完成了本發明。 As a result of research conducted by the present inventors in order to solve the above-mentioned problems, they have discovered that by using two amines having different structures as the stripping solution of the current resist, even if carbonic acid is dissolved, the performance is not as good as that of the conventional stripping solution Generally reduced, the present invention has been completed.

亦即,本發明為一種阻劑之剝離液,其特徵為:含有4級銨鹽、烷醇胺及脂肪族胺。 That is, the present invention is a stripping solution for a resist, which is characterized in that it contains a level 4 ammonium salt, an alkanolamine, and an aliphatic amine.

另外,本發明為一種阻劑之剝離液套件,其特徵為包含:含有烷醇胺及脂肪族胺之第1液與含有4級銨鹽之第2液。 In addition, the present invention is a peeling liquid kit of a resist, which is characterized by comprising a first liquid containing an alkanolamine and an aliphatic amine and a second liquid containing a fourth-grade ammonium salt.

此外,本發明為一種鍍敷阻劑的除去方法,其特徵為:以上述阻劑之剝離液來處理施加阻劑的基材。 In addition, the present invention is a method for removing a plating resist, which is characterized in that the substrate to which the resist is applied is treated with the peeling solution of the resist.

再者,本發明為一種印刷電路板、半導體基板、平面顯示器或導線框架之製造方法,其係包含由施加阻劑的基材中去除阻劑之步驟之印刷電路板、半導體基板、平面顯示器或導線框架之製造方法,其特徵為:使用上述阻劑之剝離液來進行阻劑的去除。 Furthermore, the present invention is a method for manufacturing a printed circuit board, a semiconductor substrate, a flat display or a lead frame, which is a printed circuit board, semiconductor substrate, flat display or The method for manufacturing a lead frame is characterized in that the resist is removed using the peeling solution of the resist.

本發明之阻劑之剝離液,即使隨著使用日數的經過,碳酸溶解於液中,性能也不易像以往的剝離液般降低。 Even if the stripping liquid of the resist of the present invention is dissolved in the liquid with the passage of the use days, the performance is not easily reduced as in the conventional stripping liquid.

另外,本發明之阻劑之剝離液,隨著使用日數的經過之後,只靠補給消耗成分(例如4級銨鹽)即可使性能恢復。 In addition, the stripping solution of the resist of the present invention can recover its performance only by replenishing the consumable components (such as grade 4 ammonium salt) after the use days have passed.

本發明之阻劑之剝離液(以下簡稱為「本發明剝離液」)所使用的4級銨鹽並未受到特別限定,可列舉例如氫氧化四乙基銨、氫氧化四甲基銨等。這些4級銨鹽可使用1種或2種以上。本發明剝離液中的4級銨鹽的含量並未受到特別限定,例如為1~25g/L,宜為5~20g/L。 The quaternary ammonium salt used in the stripping solution of the resist of the present invention (hereinafter referred to simply as "the stripping solution of the present invention") is not particularly limited, and examples thereof include tetraethylammonium hydroxide and tetramethylammonium hydroxide. These quaternary ammonium salts can be used alone or in combination of two or more. The content of the quaternary ammonium salt in the stripping solution of the present invention is not particularly limited, and is, for example, 1 to 25 g / L, and preferably 5 to 20 g / L.

本發明剝離液所使用的烷醇胺並未受到特別限定,可列舉例如單乙醇胺、三乙醇胺、2-(二甲基胺基)乙醇等。這些烷醇胺可使用1種或2種以上。本發明剝離液中的烷醇胺的含量並未受到特別限定,例如為10~150g/L,宜為40~100g/L。 The alkanolamine used in the peeling liquid of the present invention is not particularly limited, and examples thereof include monoethanolamine, triethanolamine, and 2- (dimethylamino) ethanol. These alkanolamines can be used alone or in combination of two or more. The content of the alkanolamine in the peeling liquid of the present invention is not particularly limited, and is, for example, 10 to 150 g / L, and preferably 40 to 100 g / L.

本發明剝離液所使用的脂肪族胺並未受到特別限定,可列舉例如乙二胺、三乙胺、六亞甲基二胺等。這些脂肪族胺可使用1種或2種以上。本發明剝離液中的脂肪族胺的含量並未受到特別限定,例如為0.5~40g/L,宜 為8~25g/L。 The aliphatic amine used in the peeling liquid of the present invention is not particularly limited, and examples thereof include ethylenediamine, triethylamine, and hexamethylenediamine. These aliphatic amines can be used alone or in combination of two or more. The content of the aliphatic amine in the stripping solution of the present invention is not particularly limited, and is preferably 0.5 to 40 g / L, for example. It is 8 ~ 25g / L.

在本發明剝離液之中,上述烷醇胺與脂肪族胺的組合不受特別限定,例如上述烷醇胺係以單乙醇胺為佳,脂肪族胺係以三乙胺或乙二胺為佳,以乙二胺為較佳。 In the stripping solution of the present invention, the combination of the alkanolamine and the aliphatic amine is not particularly limited. For example, the alkanolamine is preferably monoethanolamine, and the aliphatic amine is preferably triethylamine or ethylenediamine. Ethylenediamine is preferred.

在本發明剝離液中,亦可進一步含有有機溶劑。本發明剝離液所使用的有機溶劑並未受到特別限定,可列舉例如亞碸類、甘醇類、內醯胺類等。 The peeling liquid of the present invention may further contain an organic solvent. The organic solvent used in the peeling liquid of the present invention is not particularly limited, and examples thereof include fluorenes, glycols, and lactams.

上述亞碸類,可列舉例如二甲亞碸等。本發明剝離液中的亞碸類的含量並未受到特別限定,例如為1~40g/L,宜為3.5~10g/L。 Examples of the above arsenic include dimethylarsin and the like. The content of the arsenic in the peeling liquid of the present invention is not particularly limited, and is, for example, 1 to 40 g / L, and preferably 3.5 to 10 g / L.

上述甘醇類,可列舉例如丙二醇、二乙二醇單乙醚等,本發明剝離液中的甘醇類的含量並未受到特別限定,例如為10~100g/L,宜為20~60g/L。 Examples of the above glycols include propylene glycol, diethylene glycol monoethyl ether, and the like. The content of the glycols in the stripping solution of the present invention is not particularly limited, and is, for example, 10 to 100 g / L, and preferably 20 to 60 g / L. .

上述內醯胺類,可列舉例如N-甲基-2-吡咯烷酮等。本發明剝離液中的內醯胺類的含量並未受到特別限定,例如為10~800g/L,宜為10~50g/L。 Examples of the aforementioned lactams include N-methyl-2-pyrrolidone and the like. The content of lactamamines in the stripping solution of the present invention is not particularly limited, and is, for example, 10 to 800 g / L, and preferably 10 to 50 g / L.

上述有機溶劑可使用1種或2種以上,至少使用亞碸類為佳,使用亞碸類與甘醇類為較佳,使用二甲亞碸與丙二醇為特佳。 The above organic solvents can be used singly or in combination of two or more kinds. It is preferable to use at least stilbene, stilbene and glycols, and dimethylmethylene and propylene glycol.

此外,本發明剝離液宜為只由上述成分構成,只要不損及本發明效果,亦可含有例如消泡劑等。此外,具有發泡性的界面活性劑等,由於會損及本發明之效果,因此在本發明剝離液中以不含為佳。 In addition, the peeling liquid of the present invention is preferably composed of only the above-mentioned components, and as long as the effect of the present invention is not impaired, it may contain, for example, an antifoaming agent. In addition, since a foaming surfactant and the like may impair the effect of the present invention, it is preferable that the surfactant is not contained in the peeling liquid of the present invention.

以上說明的本發明剝離液,可藉由使上述成分溶於水來調製。 The peeling liquid of the present invention described above can be prepared by dissolving the above components in water.

本發明剝離液,可為預先使所有成分溶於水所調製出的液體,或可利用包含含有烷醇胺及脂肪族胺之第1液(依照必要使用有機溶劑)與含有4級銨鹽之第2液的阻劑之剝離液套件,在使用時調製。 The peeling liquid of the present invention may be a liquid prepared by dissolving all components in water in advance, or a liquid containing a first liquid containing an alkanolamine and an aliphatic amine (using an organic solvent as necessary) and a fourth-grade ammonium salt may be used. The peeling liquid kit of the second liquid resist is prepared during use.

藉由使用本發明剝離液來處理施加阻劑的基材,阻劑會被粉碎得很細,而能夠去除阻劑。 By using the peeling liquid of the present invention to treat a substrate to which a resist is applied, the resist is pulverized to be fine and the resist can be removed.

以本發明剝離液來處理施加阻劑的基材的條件不受特別限定,可列舉例如將基材浸漬於調整在10~80℃的本發明剝離液1~60分鐘左右的條件、或將調整在10~80℃的本發明剝離液噴灑在基材1~60分鐘左右的條件。此外,浸漬時可搖動基材或對本發明剝離液發射超音波。 The conditions under which the resist-applied substrate is treated with the peeling liquid of the present invention are not particularly limited, and examples include conditions in which the substrate is immersed in the peeling liquid of the present invention adjusted at 10 to 80 ° C. for about 1 to 60 minutes, or adjusted. The stripping solution of the present invention at 10 to 80 ° C. is sprayed on the substrate for about 1 to 60 minutes. In addition, the substrate may be shaken during immersion or an ultrasonic wave may be emitted to the peeling liquid of the present invention.

阻劑的種類並未受到特別限定,例如,宜為鹼可溶型。這種鹼可溶型的阻劑,可列舉例如UFG-258(SAP用25μm厚)(旭化成股份有限公司製)等。 The type of the resist is not particularly limited, and for example, it is preferably an alkali-soluble type. Examples of the alkali-soluble resist include UFG-258 (25 μm thick for SAP) (manufactured by Asahi Kasei Corporation).

施加阻劑的基材並未受到特別限定,可列舉例如使用於印刷電路板、半導體基板、平面顯示器、導線框架且由各種金屬或合金所形成的薄膜、基板、零件等。 The base material to which the resist is applied is not particularly limited, and examples thereof include films, substrates, and parts made of various metals or alloys used in printed circuit boards, semiconductor substrates, flat-panel displays, and lead frames.

如上述方式,本發明剝離液,可由施加阻劑的基材中去除阻劑,因此可使用於包含這種去除阻劑之步驟的印刷電路板、半導體基板、平面顯示器、導線框架等的製造方法。 As described above, the peeling liquid of the present invention can remove the resist from the base material to which the resist is applied, so that it can be used for a method for manufacturing a printed circuit board, a semiconductor substrate, a flat display, a lead frame, and the like including the step of removing the resist. .

上述製造方法之中,宜為包含由施加阻劑的基材中去除阻劑之步驟之印刷電路板之製造方法,尤其宜為利用半加成法的印刷電路板之製造方法。 Among the above-mentioned manufacturing methods, a method for manufacturing a printed circuit board including a step of removing the resist from a substrate to which the resist is applied is preferred, and a method for manufacturing a printed circuit board using a semi-additive method is particularly preferred.

〔實施例〕 [Example]

以下列舉實施例詳細說明本發明,然而本發明完全不受這些實施例限定。 The following examples illustrate the present invention in detail, but the present invention is not limited at all by these examples.

實施例1 Example 1 剝離液的調製: Preparation of stripping solution:

使以下的表1所記載的成分溶於水,調製出剝離液。 The components described in Table 1 below were dissolved in water to prepare a peeling solution.

( )的數值為g/L。 The value of () is g / L.

TMAH:氫氧化四甲基銨 TMAH: Tetramethylammonium hydroxide

MEA:單乙醇胺 MEA: Monoethanolamine

TEA:三乙醇胺 TEA: Triethanolamine

DMAE:2-(二甲基胺基)乙醇 DMAE: 2- (dimethylamino) ethanol

EDA:乙二胺 EDA: Ethylenediamine

TEN:三乙胺 TEN: Triethylamine

PG:丙二醇 PG: propylene glycol

DGME:二乙二醇單乙醚 DGME: Diethylene glycol monoethyl ether

DMSO:二甲亞碸 DMSO: Dimethoate

實施例2 Example 2 剝離液的性能: Performance of peeling liquid: (1)剝離測試 (1) Peel test

使用在貼銅層合板(古河電工股份有限公司製:CCL二電解銅箔GTS 35μm箔)上層合乾薄膜(旭化成製:UFG-258(SAP用);25μm厚)然後實施曝光而成的基板,切出50×50mm2的部分作為測試片。 A substrate obtained by laminating a dry film (manufactured by Asahi Kasei: UFG-258 (for SAP); 25 μm thick) on a copper-clad laminate (manufactured by Furukawa Electric Co., Ltd .: CCL secondary electrolytic copper foil GTS 35 μm foil), A 50 × 50 mm 2 portion was cut out as a test piece.

將上述測試片浸漬於液溫為50℃的各剝離液,以1往復/1秒鐘搖動基板,測定乾薄膜完全剝離為止的時間及剝離後的剝離片尺寸(長邊)。 The test piece was immersed in each peeling liquid having a liquid temperature of 50 ° C., the substrate was shaken at 1 reciprocation / 1 second, and the time until the dry film was completely peeled off and the size (long side) of the peeling sheet after peeling were measured.

(2)二氧化碳耐性 (2) Carbon dioxide resistance

對於剝離液(1L),將液溫保持在50℃,同時以空氣流量1L/min實施空氣起泡192小時(8天)。起泡後,進行與(1)同樣的剝離測試。 The peeling liquid (1 L) was maintained at 50 ° C. while air bubbling was performed at an air flow rate of 1 L / min for 192 hours (8 days). After foaming, the same peel test as in (1) was performed.

(3)恢復性 (3) Recovery

在(2)的起泡後,以滴定分析來分析消耗成分的結果,可知4級銨鹽被消耗。於是,以恢復成表1的組成的量 來補給4級銨鹽。在補給後,進行與(1)同樣的剝離測試。 After foaming in (2), the analysis of the consumption components by titration analysis revealed that the fourth-order ammonium salt was consumed. So, to restore the amount of the composition of Table 1 To supply level 4 ammonium. After replenishment, the same peel test as in (1) was performed.

(4)結果 (4) Results

將上述測試的結果揭示於表2。 The results of the above tests are shown in Table 2.

由以上的結果可知,藉由使用烷醇胺與脂肪族胺這兩種物質作為胺類,即使在起泡8天後,性能(尤其是剝離尺寸)也並未像以往的剝離液般降低。另外,藉由補給消耗成分,剝離液會在接近原本的性能的狀態。可知上述剝離液之中,若考慮在實際的生產線使用,則從剝離時間與尺寸看來,以組成2及5為佳,尤其從起泡8天後的性能看來,以組成2為佳。 From the above results, it was found that by using two substances, alkanolamines and aliphatic amines, as amines, even after foaming for 8 days, performance (especially peeling size) did not decrease as in conventional peeling liquids. In addition, by replenishing the consumable components, the peeling liquid is in a state close to the original performance. It can be seen that among the above-mentioned peeling liquids, if the use in an actual production line is considered, from the standpoint of peeling time and size, the compositions 2 and 5 are preferable, and from the viewpoint of performance after 8 days of foaming, the composition 2 is preferable.

〔產業上的可利用性〕 [Industrial availability]

本發明可利用於包含由施加阻劑的基材中去除阻劑之步驟之印刷電路板、半導體基板、平面顯示器或導線框架之製造方法。 The present invention can be used in a method for manufacturing a printed circuit board, a semiconductor substrate, a flat display, or a lead frame including a step of removing the resist from a resist-applied substrate.

Claims (10)

一種阻劑之剝離液,其特徵為:含有4級銨鹽、烷醇胺及脂肪族胺。 A stripping solution for a resist, characterized in that it contains a level 4 ammonium salt, an alkanolamine and an aliphatic amine. 如申請專利範圍第1項之阻劑之剝離液,其中烷醇胺為單乙醇胺,脂肪族胺為乙二胺。 For example, the stripping solution of the barrier agent in the scope of application for the patent, wherein the alkanolamine is monoethanolamine and the aliphatic amine is ethylenediamine. 如申請專利範圍第1或2項之阻劑之剝離液,其中進一步含有有機溶劑。 For example, the stripping solution for the resist in the scope of patent application No. 1 or 2 further contains an organic solvent. 如申請專利範圍第3項之阻劑之剝離液,其中至少使用亞碸類的溶劑作為有機溶劑。 For example, the stripping solution of the resist in the third item of the patent application, wherein at least a solvent of the subfluorene type is used as the organic solvent. 一種阻劑之剝離液套件,其特徵為包含:含有烷醇胺及脂肪族胺之第1液與含有4級銨鹽之第2液。 A peeling liquid kit for a resist, comprising: a first liquid containing an alkanolamine and an aliphatic amine; and a second liquid containing a grade 4 ammonium salt. 一種阻劑的除去方法,其特徵為:以如申請專利範圍第1~4項中任一項之阻劑之剝離液來處理施加阻劑的基材。 A method for removing a resist, characterized in that the base material to which the resist is applied is treated with a stripping solution of the resist according to any one of claims 1 to 4 of the patent application scope. 一種印刷電路板之製造方法,其係包含由施加阻劑的基材中去除阻劑之步驟之印刷電路板之製造方法,其特徵為:使用如申請專利範圍第1~4項中任一項之阻劑之剝離 液來進行阻劑的去除。 A method for manufacturing a printed circuit board, which is a method for manufacturing a printed circuit board including a step of removing a resist from a base material to which the resist is applied, which is characterized by using any one of items 1 to 4 of the scope of patent application Stripping Liquid to remove the resist. 一種半導體基板之製造方法,其係包含由施加阻劑的基材中去除阻劑之步驟之半導體基板之製造方法,其特徵為:使用如申請專利範圍第1~4項中任一項之阻劑之剝離液來進行阻劑的去除。 A method for manufacturing a semiconductor substrate, which is a method for manufacturing a semiconductor substrate including a step of removing the resist from a base material to which the resist is applied, which is characterized by using a resist as described in any one of claims 1 to 4 of the scope of patent application. Remover of the agent to remove the resist. 一種平面顯示器之製造方法,其係包含由施加阻劑的基材中去除阻劑之步驟之平面顯示器之製造方法,其特徵為:使用如申請專利範圍第1~4項中任一項之阻劑之剝離液來進行阻劑的去除。 A method of manufacturing a flat display, which is a method of manufacturing a flat display including a step of removing the resist from a base material to which the resist is applied, which is characterized by using a resist such as any one of claims 1 to 4 in the scope of patent application. Remover of the agent to remove the resist. 一種導線框架之製造方法,其係包含由施加阻劑的基材中去除阻劑之步驟之導線框架之製造方法,其特徵為:使用如申請專利範圍第1~4項中任一項之阻劑之剝離液來進行阻劑的去除。 A method for manufacturing a lead frame, which is a method for manufacturing a lead frame including a step of removing the resist from a base material to which the resist is applied, which is characterized by using a resist such as any one of claims 1 to 4 in the scope of patent application. Remover of the agent to remove the resist.
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