TW201641994A - 電連接結構、陣列基板及絕緣覆蓋層的製作方法 - Google Patents

電連接結構、陣列基板及絕緣覆蓋層的製作方法 Download PDF

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TW201641994A
TW201641994A TW104117270A TW104117270A TW201641994A TW 201641994 A TW201641994 A TW 201641994A TW 104117270 A TW104117270 A TW 104117270A TW 104117270 A TW104117270 A TW 104117270A TW 201641994 A TW201641994 A TW 201641994A
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廖金閱
劉家麟
戴延樘
呂宏哲
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鴻海精密工業股份有限公司
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Abstract

一種電連接結構的製作方法，包括：提供相互電性連接的連接墊與連接線，該連接墊與該連接線均為金屬層；形成覆蓋所述連接線的絕緣覆蓋層；以及通過一光罩對所述絕緣覆蓋層進行曝光，其中，所述光罩包括一第一半透光區與一第二半透光區，所述第一半透光區對應所述距離該絕緣覆蓋層較近的金屬層的位置，所述第二半透光區對應其他區域設置，所述第一半透光區的透光率低於所述第二半透光區的透光率。

Description

電連接結構、陣列基板及絕緣覆蓋層的製作方法
本發明涉及一種電連接結構的製作方法、一種陣列基板的製作方法以及一種絕緣覆蓋層的製作方法。
液晶顯示面板通常包括陣列基板、對向基板及夾設在所述陣列基板與對向基板之間的液晶層，通過控制所述液晶層中液晶分子的旋轉以控制光線的通過量，進而實現畫面顯示。其中，該陣列基板包括諸如薄膜電晶體、存儲電容以及位於陣列基板周邊的連接墊、連接線等結構。在形成上述結構之後，通常形成一覆蓋上述結構的絕緣覆蓋層，例如形成一平坦化層，並對所述絕緣覆蓋層進行曝光。然而，對所述絕緣覆蓋層進行曝光容易使絕緣覆蓋層的表面不平整，影響陣列基板的穩定性。
鑑於此，有必要提供一種電連接結構的製作方法，包括：提供相互電性連接的連接墊與連接線，該連接墊與該連接線均為金屬層；形成覆蓋所述連接線的絕緣覆蓋層；以及通過一光罩對所述絕緣覆蓋層進行曝光，其中，所述光罩包括一第一半透光區與一第二半透光區，所述第一半透光區對應所述距離該絕緣覆蓋層較近的金屬層的位置，所述第二半透光區對應其他區域設置，所述第一半透光區的透光率低於所述第二半透光區的透光率。
還有必要提供一種陣列基板的製作方法，包括：提供薄膜電晶體，所述薄膜電晶體包括源極、汲極、通道層以及閘極，所述源極、汲極與閘極均為金屬層；形成覆蓋所述薄膜電晶體的絕緣覆蓋層；以及通過一光罩遮對所述絕緣覆蓋層進行曝光，所述光罩包括第一光罩區與第二光罩區，所述第一光罩區對應所述距離該絕緣覆蓋層較近的金屬層的位置，所述第二光罩區對應其他區域設置，所述第一光罩區的透光率低於所述第二光罩區的透光率。
還有必要提供一種絕緣覆蓋層的形成方法，包括：在一具有金屬層的基板上形成一覆蓋所述金屬層的絕緣覆蓋層；以及通過一光罩對所述絕緣覆蓋層進行曝光，其中，所述光罩包括一第一半透光區與一第二半透光區，所述第一半透光區對應所述金屬層的位置，所述第二半透光區對應其他區域設置，所述第一半透光區的透光率低於所述第二半透光區的透光率。
相較於習知技術，本發明所提供的電連接結構、陣列基板及絕緣覆蓋層的製作方法由於在曝光時使用不同透光率的光罩遮蔽所述絕緣覆蓋層，能夠有效的降低在曝光時絕緣覆蓋層與金屬層對應位置的光線強度，使絕緣覆蓋層不易被光線破壞，進而得到平坦的絕緣覆蓋層。
圖1是本發明具體實施方式電連接結構的製作方法的流程圖。
圖2至圖6是圖1中各步驟的分步示意圖。
圖7是本發明具體實施方式陣列基板的製作方法的流程圖。
圖8至圖13是圖7中各步驟的分步示意圖。
下面結合附圖將對本發明實施方式作進一步的詳細說明。
在液晶顯示器中陣列基板的形成過程中，經常會在陣列基板上的電連接結構上形成一絕緣覆蓋層，如鈍化層，之後對該絕緣覆蓋層進行曝光以在所述絕緣覆蓋層上開孔或對所述絕緣覆蓋層漂白。然而，對所述絕緣覆蓋層進行曝光容易使該絕緣覆蓋層的表面不平整。經研究發現，導致所述絕緣覆蓋層不平整的原因主要在於對所述絕緣覆蓋層進行曝光時該由金屬層形成的電連接結構會把曝光的光線反射至所述絕緣覆蓋層，導致該絕緣覆蓋層受到了雙重曝光，進而使得該絕緣覆蓋層的表面被破壞。
因此，在本發明具體實施方式中，通過提供透光率有差異的光罩，降低與所述電連接結構金屬層對應位置的光罩的光線透射率，由此降低與所述電連接結構對應位置的光線強度，防止所述絕緣覆蓋層因光線強度過高而損壞，進而得到平坦的絕緣覆蓋層。下面詳細舉例進行說明。
請參閱圖1，為本發明具體實施方式所提供的電連接結構的製作方法的流程圖。所應說明的是，本發明電連接結構的製作方法並不受限於下述步驟的順序，且在其他實施方式中，本實施例電連接結構的製作方法可以只包括以下所述步驟的其中一部分，或者其中的部分步驟可以被刪除。本實施方式中的電連接結構是形成在一陣列基板的非顯示區域中。
下面結合圖1各流程步驟的說明對本發明具體實施方式所提供的電連接結構的製作方法進行詳細介紹。
步驟S201，請參閱圖2，提供基板100，在所述基板100上形成緩衝層105，並在所述緩衝層105上形成連接墊118。
具體地，首先在所述基板100上形成一覆蓋所述基板100的緩衝層105。接著，在所述緩衝層105上形成一覆蓋所述緩衝層105的金屬層。之後，通過黃光製程圖案化所述金屬層以形成所述連接墊118。
在本實施方式中，所述基板100的材質選自透明基材，例如玻璃、石英或有機聚合物等。所述緩衝層105的材質選自透明絕緣材料，例如氧化硅、氮化硅以及氮氧化硅等。所述連接墊118的材質選自鋁、鈦、鉬、鉭、銅等金屬。
可以理解，所述緩衝層105不是必要的，在其它實施方式中，所述連接墊118可直接形成在所述基板100上。
步驟S202，請參閱圖3，形成覆蓋所述緩衝層105以及連接墊118的絕緣層122，並在所述絕緣層122對應所述連接墊118的位置形成連接墊孔172。
具體地，首先形成覆蓋所述緩衝層105以及連接墊118的絕緣層122。接著，通過黃光製程圖案化所述絕緣層122以在所述絕緣層122對應所述連接墊118的位置形成連接墊孔172。
在本實施方式中，所述絕緣層122的材質選自透明絕緣材料，例如氧化鋁、氧化硅、氮化硅以及氮氧化硅等。
步驟S203，請參閱圖4，在所述絕緣層122上形成連接線146，所述連接線146通過所述連接墊孔172與所述連接墊118電性連接。在本實施方式中，所述連接線146在所述基板100上的投影面積大於所述連接墊118在所述基板100上的投影面積。
具體地，首先在所述絕緣層122與通道層132上形成一金屬層。之後通過黃光製程圖案化所述金屬層以形成所述連接線146。
在本實施方式中，所述連接線146的材質選自鋁、鈦、鉬、鉭、銅等金屬。
經由上述步驟，該連接線146與該連接墊118經由該連接墊孔172構成電性連接，從而形成電連接結構。可以理解，本發明的電連接結構並不限於本實施例所列，還可包括其他層結構，如具有半導體層結構的其他類型電連接結構。
步驟S204，請參閱圖5，形成覆蓋所述連接線146以及絕緣層122上的絕緣覆蓋層152。
在本實施方式中，所述絕緣覆蓋層152為一鈍化層，所述絕緣覆蓋層152選自常作為鈍化層的有機材料，例如採用聚碳酸酯(PC)以及苯並環乙烯(BCB)等。
步驟S205，請參閱圖6，通過一光罩200對所述絕緣覆蓋層152進行曝光，所述光罩200對應所述電連接結構中金屬線所在區域，如連接線146，的位置定義有第一半透光區230，所述光罩200對應非金屬線所在區域的位置定義有第二半透光區220，所述第一半透光區230的透光率低於所述第二半透光區220的透光率。在本實施方式中，所述第一半透光區230透光率的範圍在5%-90%之間。優選地，所述第一半透光區230透光率的範圍在20%-80%之間。
經過光線的照射，與該第二半透光區220位置對應的絕緣覆蓋層152被光線漂白，增加了光線的透射率，從而形成了鈍化層；而與該第一半透光區230位置對應的絕緣覆蓋層152由於被所述第一半透光區230遮蔽的光線多，光線強度低，因此即使光線被由金屬形成的連接線146所反射，減少對所述絕緣覆蓋層152的表面產生破壞，因此所述絕緣覆蓋層152的表面能夠更加平坦。
可變更地，若該連接線146設置在該連接墊118下方，二者經由該連接墊孔進行電性連接，由於該連接墊118較該連接線146距離該絕緣覆蓋層152的距離更近，該連接墊118相較該連接線146對光線的反射效應更大，故該光罩200的第一半透光區230優選地對應所述連接墊118設置。可以理解，優選地，該光罩200的第一半透光區230對應所述電連接結構中較該絕緣覆蓋層152距離近的金屬層設置。
由此，本發明具體實施方式所提供的電連接結構的製作方法由於使用該具有不同透光率的光罩200，能夠有效的降低與金屬材質的所述連接線146對應位置的光罩200的光線透射率，由此降低所述絕緣覆蓋層152與所述連接線146對應位置的光線強度，使絕緣覆蓋層152不易被光線破壞，進而得到平坦的絕緣覆蓋層152。
請參閱圖7，為本發明具體實施方式所提供的陣列基板的製作方法的流程圖。所應說明的是，本發明陣列基板的製作方法並不受限於下述步驟的順序，且在其他實施方式中，本實施例陣列基板的製作方法可以只包括以下所述步驟的其中一部分，或者其中的部分步驟可以被刪除。下面結合圖7各流程步驟的說明對本發明具體實施方式所提供的陣列基板的製作方法進行詳細介紹。
步驟S301，請參閱圖8，提供基板100，在所述基板100上形成緩衝層105，並在所述緩衝層105上形成閘極114以及連接墊118。
具體地，首先在所述基板100上形成一覆蓋所述基板100的緩衝層105。接著，在所述緩衝層105上形成一覆蓋所述緩衝層105的金屬層。之後，通過黃光製程圖案化所述金屬層以形成所述閘極114以及連接墊118。
在本實施方式中，所述基板100的材質選自透明基材，例如玻璃、石英或有機聚合物等。所述緩衝層105的材質選自透明絕緣材料，例如氧化硅、氮化硅以及氮氧化硅等。所述閘極114以及連接墊118的材質選自鋁、鈦、鉬、鉭、銅等金屬。
可以理解，所述緩衝層105不是必要的，在其它實施方式中，所述閘極114以及連接墊118可直接形成在所述基板100上。
步驟S302，請參閱圖9，形成覆蓋所述緩衝層105、閘極114以及連接墊118的絕緣層122，在所述絕緣層122上與閘極114對應的位置形成通道層132，並在所述絕緣層122對應所述連接墊118的位置形成連接墊孔172。
具體地，首先形成覆蓋所述緩衝層105、閘極114以及連接墊118的絕緣層122。接著，在所述絕緣層122上形成一覆蓋所述絕緣層122的半導體層。之後，通過黃光製程圖案化所述半導體層以形成所述通道層132。所述通道層132的位置與所述閘極114的位置相對應。在圖案化所述半導體層以形成所述通道層132的同時，通過所述黃光製程一併圖案化所述絕緣層122以在所述絕緣層122對應所述連接墊118的位置形成連接墊孔172。
在本實施方式中，所述絕緣層122的材質選自透明絕緣材料，例如氧化鋁、氧化硅、氮化硅以及氮氧化硅等。所述通道層132的材質為半導體，例如金屬氧化物、非晶硅或多晶硅等。
步驟S303，請參閱圖10，在所述絕緣層122上形成源極142、汲極144以及連接線146，所述源極142與汲極144設置在所述絕緣層122上且分別覆蓋所述通道層132的兩端，所述連接線146設置在所述絕緣層122上且通過所述連接墊孔172與所述連接墊118電性連接。所述源極142、通道層132以及汲極144在所述基板100上的總投影面積大於所述閘極114在所述基板100上的投影面積，所述連接線146在所述基板100上的投影面積大於所述連接墊118在所述基板100上的投影面積。
具體地，首先在所述絕緣層122與通道層132上形成一金屬層。之後通過黃光製程圖案化所述金屬層以形成所述源極142、汲極144與連接線146。
在本實施方式中，所述源極142、汲極144以及連接線146的材質選自鋁、鈦、鉬、鉭、銅等金屬。
經由上述步驟，該連接線146與該連接墊118經由該連接墊孔172構成電性連接，從而形成一電連接結構。可以理解，本發明的電連接結構並不限於本實施例所列，還可包括其他層結構，如具有半導體層結構的其他類型電連接結構。
與此同時，經上述步驟，所述閘極114、源極142、汲極144以及通道層132構成一薄膜電晶體。可以理解，本發明的薄膜電晶體並不限於本實施例所列，還可以為其它結構，例如一頂閘極型薄膜電晶體結構。
步驟S304，請參閱圖11，形成覆蓋所述源極142、通道層132、汲極144、連接線146以及絕緣層122的絕緣覆蓋層152。
在本實施方式中，所述絕緣覆蓋層152為一鈍化層，所述絕緣覆蓋層152選自常作為鈍化層的有機材料，例如採用聚碳酸酯(PC)以及苯並環乙烯(BCB)等。
步驟S305，請參閱圖12，通過一光罩300對所述絕緣覆蓋層152進行曝光，所述光罩300包括第一光罩區310及第二光罩區320，該第一光罩區310對應所述源極142、連接線146以及汲極144設置，其他區域定義所述第二光罩區320。該第一光罩區310進一步包括一子光罩區330，該子光罩區330對應部分汲極144的位置，用於在所述絕緣覆蓋層152上開設接觸孔，所述第二光罩區320的透光率低於所述子光罩區330的透光率，所述第一光罩區310的透光率低於所述第二光罩區320的透光率。在本實施方式中，所述第一光罩區310透光率的範圍在5%-90%之間。優選地，所述第一光罩區310透光率的範圍在20%-80%之間。
經過光線的照射，與該子光罩區330位置對應的絕緣覆蓋層152被照射的最嚴重，能夠被光阻顯影液去除；與該第二光罩區320位置對應的絕緣覆蓋層152被光線漂白，增加了光線的透射率；而與該第一光罩區310位置對應的絕緣覆蓋層152由於被所述第一光罩區310遮蔽的光最多，光線強度最低，因此即使光線被由金屬形成的所述源極142、汲極144以及連接線146所反射，仍不會對所述絕緣覆蓋層152的表面產生破壞，進而所述絕緣覆蓋層152的表面能夠保持平坦。
可變更地，若該連接線146設置在該連接墊118下方，且源極142與汲極144設置在該閘極114下方，由於該連接墊118較該連接線146距離該絕緣覆蓋層152的距離更近，且該閘極114距離該源極142與汲極144距離該絕緣覆蓋層152的距離更近，該連接墊118相較該連接線146對光線的反射效應更大，且該閘極114相較該源極142與汲極144對光線的反射效應更大，故該光罩200的第一光罩區310優選地對應所述連接墊118與閘極114設置。可以理解，優選地，該光罩200的第一光罩區310對應所述電連接結構中較該絕緣覆蓋層152距離近的金屬層設置。
步驟S306，請參閱圖13，去除所述絕緣覆蓋層152對應所述子光罩區330的位置以形成接觸孔174，之後在所述絕緣覆蓋層152上形成通過所述接觸孔174與所述汲極144電性連接的畫素電極162。
具體地，首先，通過光阻顯影液去除所述絕緣覆蓋層152對應所述子光罩區330的位置以形成接觸孔174。接著，在所述絕緣覆蓋層152上形成一透明導電層，之後通過黃光製程圖案化所述透明導電層以形成所述畫素電極162。在本實施方式中，所述畫素電極162的材質選自氧化銦錫(ITO)。
本發明具體實施方式提供的陣列基板的製作方法由於使用該不同透光率的光罩300，能夠有效的降低與金屬材質的所述源極142、汲極144以及連接線146對應位置的光罩300的光線透射率，由此降低與所述源極142、汲極144以及連接線146對應位置的光線強度，使絕緣覆蓋層152不易被光線破壞，進而得到平坦的絕緣覆蓋層152。
可以理解，在一具有金屬層的基板上形成覆蓋所述金屬層的絕緣覆蓋層並對所述絕緣覆蓋層進行曝光時，均可使用本發明所使用的具有不同透光率的光罩，具體而言，該光罩包括一第一半透光區與一第二半透光區，所述第一半透光區對應所述金屬層的位置，所述第二半透光區對應其他區域設置，所述第一半透光區的透光率低於所述第二半透光區的透光率，由此即可降低所述金屬層對應位置的光線強度，使絕緣覆蓋層不易被光線破壞，進而得到平坦的絕緣覆蓋層。
綜上所述，本創作符合發明專利要件，爰依法提出專利申請。惟，以上所述者僅為本創作之較佳實施例，本創作之範圍並不以上述實施例為限，舉凡熟習本案技藝之人士爰依本創作之精神所作之等效修飾或變化，皆應涵蓋於以下申請專利範圍內。
1‧‧‧液晶顯示面板
10‧‧‧陣列基板
11‧‧‧對向基板
12‧‧‧液晶層
100‧‧‧基板
105‧‧‧緩衝層
114‧‧‧閘極
118‧‧‧連接墊
122‧‧‧絕緣層
172‧‧‧連接墊孔
174‧‧‧接觸孔
132‧‧‧通道層
142‧‧‧源極
144‧‧‧汲極
152‧‧‧絕緣覆蓋層
162‧‧‧畫素電極
146‧‧‧連接線
200、300‧‧‧光罩
220‧‧‧第二半透光區
230‧‧‧第一半透光區
310‧‧‧第一光罩區
320‧‧‧第二光罩區
330‧‧‧子光罩區
無
100‧‧‧基板
105‧‧‧緩衝層
118‧‧‧連接墊
122‧‧‧絕緣層
152‧‧‧絕緣覆蓋層
146‧‧‧連接線
200‧‧‧光罩
220‧‧‧第二半透光區
230‧‧‧第一半透光區

Claims (12)

  1. 一種電連接結構的製作方法，包括：
    提供相互電性連接的連接墊與連接線，該連接墊與該連接線均為金屬層；
    形成覆蓋所述連接線的絕緣覆蓋層；以及
    通過一光罩對所述絕緣覆蓋層進行曝光，其中，所述光罩包括一第一半透光區與一第二半透光區，所述第一半透光區對應所述距離該絕緣覆蓋層較近的金屬層的位置，所述第二半透光區對應其他區域設置，所述第一半透光區的透光率低於所述第二半透光區的透光率。
  2. 如請求項1所述的電連接結構的製作方法，其中，所述連接線距離該絕緣覆蓋層的距離小於該連接墊距離該絕緣覆蓋層的距離。
  3. 如請求項1所述的電連接結構的製作方法，其中，所述連接線在所述基板上的投影面積大於所述連接墊在所述基板上的投影面積。
  4. 如請求項1所述的電連接結構的製作方法，其中，所述第一半透光區透光率的範圍在20%至80%之間。
  5. 一種陣列基板的製作方法，包括：
    提供薄膜電晶體，所述薄膜電晶體包括源極、汲極、通道層以及閘極，所述源極、汲極與閘極均為金屬層；
    形成覆蓋所述薄膜電晶體的絕緣覆蓋層；以及
    通過一光罩遮對所述絕緣覆蓋層進行曝光，所述光罩包括第一光罩區與第二光罩區，所述第一光罩區對應所述距離該絕緣覆蓋層較近的金屬層的位置，所述第二光罩區對應其他區域設置，所述第一光罩區的透光率低於所述第二光罩區的透光率。
  6. 如請求項5所述的陣列基板的製作方法，其中，所述第一光罩區對應所述源極與汲極的位置，所述第二光罩區對應其他區域設置。
  7. 如請求項6所述的陣列基板的製作方法，其中，所述第一光罩區進一步包括一子光罩區，該子光罩區對應部分汲極的位置，用於在所述絕緣覆蓋層上開設接觸孔，所述第二光罩區的透光率低於所述子光罩區的透光率。
  8. 如請求項6所述的陣列基板的製作方法，其中，所述薄膜電晶體的形成方法包括：
    提供基板，並在所述基板上形成閘極；
    形成覆蓋所述閘極的絕緣層，並在所述絕緣層上與閘極對應的位置形成通道層；以及
    在所述絕緣層上形成分別覆蓋所述通道層兩端的源極與汲極。
  9. 如請求項5所述的陣列基板的製作方法，其中，在形成所述薄膜電晶體的同時在所述基板上形成一電連接結構，所述電連接結構包括相互電性連接的連接墊與連接線，該連接墊與該連接線均為金屬層。
  10. 如請求項9所述的陣列基板的製作方法，其中，所述連接墊與所述閘極在同一製程中形成，所述連接線與所述源極和汲極在同一製程中形成，所述第一光罩區對應所述距離該絕緣覆蓋層較近的金屬層的位置，所述第二光罩區對應其他區域設置，所述第一光罩區的透光率低於所述第二光罩區的透光率。
  11. 如請求項5所述的陣列基板的製作方法，其中，所述第一光罩區透光率的範圍在20%至80%之間。
  12. 一種絕緣覆蓋層的形成方法，包括：
    在一具有金屬層的基板上形成一覆蓋所述金屬層的絕緣覆蓋層；以及
    通過一光罩對所述絕緣覆蓋層進行曝光，其中，所述光罩包括一第一半透光區與一第二半透光區，所述第一半透光區對應所述金屬層的位置，所述第二半透光區對應其他區域設置，所述第一半透光區的透光率低於所述第二半透光區的透光率。
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