TW201606894A - 積層佈線構件之製造方法、半導體元件之製造方法、積層佈線構件及半導體元件 - Google Patents

積層佈線構件之製造方法、半導體元件之製造方法、積層佈線構件及半導體元件 Download PDF

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Publication number
TW201606894A
TW201606894A TW104120445A TW104120445A TW201606894A TW 201606894 A TW201606894 A TW 201606894A TW 104120445 A TW104120445 A TW 104120445A TW 104120445 A TW104120445 A TW 104120445A TW 201606894 A TW201606894 A TW 201606894A
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TW
Taiwan
Prior art keywords
electrode
convex portion
insulating layer
conductive
conductive convex
Prior art date
Application number
TW104120445A
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English (en)
Chinese (zh)
Inventor
金澤周介
近藤浩史
Original Assignee
大日本印刷股份有限公司
出光興產股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 大日本印刷股份有限公司, 出光興產股份有限公司 filed Critical 大日本印刷股份有限公司
Publication of TW201606894A publication Critical patent/TW201606894A/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/28—Applying non-metallic protective coatings
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
TW104120445A 2014-06-24 2015-06-24 積層佈線構件之製造方法、半導體元件之製造方法、積層佈線構件及半導體元件 TW201606894A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014129635 2014-06-24

Publications (1)

Publication Number Publication Date
TW201606894A true TW201606894A (zh) 2016-02-16

Family

ID=54938199

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104120445A TW201606894A (zh) 2014-06-24 2015-06-24 積層佈線構件之製造方法、半導體元件之製造方法、積層佈線構件及半導體元件

Country Status (3)

Country Link
JP (1) JP6002817B2 (enExample)
TW (1) TW201606894A (enExample)
WO (1) WO2015199120A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI684289B (zh) * 2017-12-08 2020-02-01 南韓商三星Ｓｄｉ股份有限公司 太陽能電池

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102191495B1 (ko) * 2019-08-27 2020-12-15 에스디코리아(주) 폴리실록산 계면활성제, 이의 제조 방법 그리고 폴리실록산 계면활성제를 포함하는 폴리우레탄 폼 조성물

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010010609A1 (ja) * 2008-07-22 2010-01-28 パイオニア株式会社 コンタクトホールの形成方法、及び回路基板
JP2010257291A (ja) * 2009-04-27 2010-11-11 Seiko Epson Corp タッチパネルの製造方法及び表示装置製造方法並びに電子機器製造方法
JP2011044584A (ja) * 2009-08-21 2011-03-03 Seiko Epson Corp 回路基板の形成方法
JP5866783B2 (ja) * 2011-03-25 2016-02-17 セイコーエプソン株式会社 回路基板の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI684289B (zh) * 2017-12-08 2020-02-01 南韓商三星Ｓｄｉ股份有限公司 太陽能電池

Also Published As

Publication number Publication date
WO2015199120A1 (ja) 2015-12-30
JP6002817B2 (ja) 2016-10-05
JP2016027631A (ja) 2016-02-18

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