WO2015199120A1 - 積層配線部材の製造方法、半導体素子の製造方法、積層配線部材および半導体素子 - Google Patents

積層配線部材の製造方法、半導体素子の製造方法、積層配線部材および半導体素子 Download PDF

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Publication number
WO2015199120A1
WO2015199120A1 PCT/JP2015/068157 JP2015068157W WO2015199120A1 WO 2015199120 A1 WO2015199120 A1 WO 2015199120A1 JP 2015068157 W JP2015068157 W JP 2015068157W WO 2015199120 A1 WO2015199120 A1 WO 2015199120A1
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WIPO (PCT)
Prior art keywords
electrode
insulating layer
conductive
convex portion
wiring member
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Ceased
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PCT/JP2015/068157
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English (en)
French (fr)
Japanese (ja)
Inventor
周介 金澤
近藤　浩史
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Dai Nippon Printing Co Ltd
Idemitsu Kosan Co Ltd
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Dai Nippon Printing Co Ltd
Idemitsu Kosan Co Ltd
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Application filed by Dai Nippon Printing Co Ltd, Idemitsu Kosan Co Ltd filed Critical Dai Nippon Printing Co Ltd
Publication of WO2015199120A1 publication Critical patent/WO2015199120A1/ja
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Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/28—Applying non-metallic protective coatings
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates to a method for manufacturing a laminated wiring member in which two electrodes are arranged via an insulating layer, a method for manufacturing a semiconductor element using the same, a laminated wiring member, and a semiconductor element.
  • a laminated wiring member in which two electrodes are arranged via an insulating layer containing a resin is used in various devices such as a semiconductor element such as a semiconductor transistor and a capacitive touch panel sensor.
  • a configuration in which a contact hole is normally provided in the insulating layer and both electrodes are connected in the contact hole is employed.
  • a method for forming an insulating layer having a contact hole a method for forming a coating film of a photosensitive resin composition by exposure and development using a photolithography method has been conventionally used.
  • a method for forming the insulating layer a method of forming a contact hole by spraying a soluble solvent on the coating film of the curable resin composition by using an inkjet method or the like has been proposed.
  • the photolithography method there are problems such as a complicated process, dedicated equipment, and waste of materials.
  • the method for forming a contact hole by spraying a solvent has a problem that it is difficult to control the formation position of the contact hole.
  • Patent Document 1 discloses that a core made of a liquid containing heat-foamable particles is formed on a conductive layer provided in advance on an insulating base material, and an insulating layer is formed. A method is shown in which a contact hole is formed in an insulating layer by heating the material to foam the particles and cleaving the insulating layer. Further, it is described that a method for removing the residue of the nucleus after the opening is formed is described.
  • Patent Document 2 a removable pillar is formed on a base material, an insulating layer is formed on the base material on which the pillar is formed, and then the pillar is removed to form a contact hole in the insulating layer. A method is disclosed.
  • the present invention has been made in view of the above circumstances, and a manufacturing method of a laminated wiring member capable of forming an insulating layer having a contact hole by a simple method, a manufacturing method of a semiconductor element using the same, and A main object is to provide a laminated wiring member capable of satisfactorily conducting two electrodes through an insulating layer and a semiconductor element using the same.
  • the present invention provides a wiring member having a base material and a first electrode formed on the base material, and a conductive composition ink containing a conductive material, a liquid repellent and a solvent.
  • an insulating layer having a contact hole can be formed by a simple method by having the conductive convex portion forming step and the insulating layer forming step.
  • the insulating layer is formed so that the thickness of the insulating layer is larger than the height of the conductive protrusion.
  • the insulating layer is formed such that the thickness of the insulating layer is in the range of 1.5 to 5 times the height of the conductive protrusion. Is preferably formed. This is because by increasing the thickness of the insulating layer above the height of the conductive protrusion, the conductive protrusion and the second electrode can be easily conducted in the contact hole.
  • the conductive convex portion is formed so that the size of the conductive convex portion is within a range of 10 ⁇ m to 100 ⁇ m. This is because the contact hole can be satisfactorily formed in the insulating layer.
  • the conductive convex portion is formed such that the aspect ratio (height / size) of the conductive convex portion is within a range of 0.01 to 0.1. Is preferably formed. This is because the contact hole can be satisfactorily formed in the insulating layer, and the conductive protrusion and the second electrode can be easily conducted in the contact hole.
  • the viscosity of the resin composition is preferably in the range of 20 mPa ⁇ s to 500 mPa ⁇ s.
  • the surface tension of the resin composition is preferably in the range of 20 mN / m to 50 mN / m. This is because it is easy to form an insulating layer having a contact hole by utilizing the liquid repellency of the conductive protrusion.
  • the present invention provides a wiring member having a base material, a source electrode and a drain electrode formed on the base material, and a semiconductor layer formed in a channel region between the source electrode and the drain electrode.
  • Conductive protrusions that are electrically conductive with the drain electrode and have liquid repellency are formed by applying a conductive composition ink containing a material, a liquid repellent, and a solvent on the drain electrode in a pattern and firing.
  • a coating film of a resin composition so as to cover the source electrode, the drain electrode, and the semiconductor layer and curing the portion, and forming a contact hole in the region where the conductive convex portion is formed
  • an insulating layer having a contact hole can be formed by a simple method by having the conductive convex portion forming step and the insulating layer forming step.
  • the insulating layer is formed so that the thickness of the insulating layer is larger than the height of the conductive protrusion.
  • the insulating layer is formed such that the thickness of the insulating layer is in the range of 1.5 to 5 times the height of the conductive protrusion. Is preferably formed. This is because by increasing the thickness of the insulating layer above the height of the conductive protrusion, the conductive protrusion and the intermediate electrode or the external input / output electrode can be easily conducted in the contact hole.
  • the conductive convex portion is formed so that the size of the conductive convex portion is within a range of 10 ⁇ m to 100 ⁇ m. This is because the contact hole can be satisfactorily formed in the insulating layer.
  • the conductive convex portion is formed such that the aspect ratio (height / size) of the conductive convex portion is within a range of 0.01 to 0.1. Is preferably formed. This is because the contact hole can be satisfactorily formed in the insulating layer, and the conductive protrusion and the second electrode can be easily conducted in the contact hole.
  • the viscosity of the resin composition is preferably in the range of 20 mPa ⁇ s to 500 mPa ⁇ s.
  • the surface tension of the resin composition is preferably in the range of 20 mN / m to 50 mN / m. This is because it is easy to form an insulating layer having a contact hole by utilizing the liquid repellency of the conductive protrusion.
  • the present invention includes a base material, a first electrode formed on the base material, a conductive protrusion formed in a pattern on the first electrode, and electrically connected to the first electrode, and the first electrode.
  • a base material a first electrode formed on the base material, a conductive protrusion formed in a pattern on the first electrode, and electrically connected to the first electrode, and the first electrode.
  • a laminated wiring member comprising: a second electrode electrically connected to a conductive convex portion, wherein the insulating layer has a thickness greater than a height of the conductive convex portion.
  • the thickness of the insulating layer is larger than the height of the conductive convex portion, the conductive convex portion and the second electrode can be favorably conducted in the contact hole. Therefore, the first electrode and the second electrode can be satisfactorily conducted through the insulating layer.
  • the present invention includes a base material, a source electrode and a drain electrode formed on the base material, a semiconductor layer formed in a channel region between the source electrode and the drain electrode, and a pattern on the drain electrode. Formed on the substrate on which the source electrode, the drain electrode, and the semiconductor layer are formed, and a contact hole is formed in the region where the conductive protrusion is formed.
  • An insulating layer containing a resin, and an intermediate electrode or an external input / output electrode formed on the insulating layer and electrically connected to the conductive convex portion in the contact hole, and the conductive convex portion
  • the semiconductor element is characterized in that the thickness of the insulating layer is larger than the height of the semiconductor element.
  • the drain electrode can be electrically connected to the intermediate electrode or the external input / output electrode through the insulating layer.
  • the laminated wiring member and the semiconductor element of the present invention can conduct two electrodes satisfactorily through an insulating layer.
  • A. Manufacturing method of laminated wiring member The manufacturing method of the laminated wiring member of the present invention prepares a wiring member having a base material and a first electrode formed on the base material, and includes a conductive material, a liquid repellent, and a solvent.
  • a second electrode forming step of forming a second electrode on the insulating layer so as to be electrically connected to the conductive protrusion in the contact hole.
  • FIG. 1A to 1E are process diagrams showing an example of a method for manufacturing a laminated wiring member of the present invention.
  • a wiring member 2 having a base 21 and a first electrode 22 formed on the base 21 is prepared.
  • a conductive composition ink containing a conductive material, a liquid repellent, and a solvent is applied in a pattern on the first electrode 22 and baked, as shown in FIG.
  • Conductive convex portions 3 that are conductive and have liquid repellency are formed (conductive convex portion forming step).
  • coating film 4 'of a resin composition is formed on the wiring member 2 in which the electroconductive convex part 3 was formed.
  • the insulating layer 4 having the contact hole 5 is formed in the region where the conductive protrusions 3 are formed ( Insulating layer forming step).
  • the second electrode 6 is formed on the insulating layer 4 so as to be electrically connected to the conductive protrusion 3 in the contact hole 5 (second electrode forming step).
  • an insulating layer having a contact hole can be formed by a simple method by having the above-described liquid-repellent conductive protrusion forming step and insulating layer forming step.
  • the resin composition is applied onto the wiring member in the insulating layer forming step.
  • the resin composition can be repelled on the surface of the conductive convex portion. Therefore, a coating film of the resin composition having an opening in the region where the conductive convex portion is formed can be formed, and an insulating layer having a contact hole can be formed by curing the coating film. Therefore, in the present invention, the insulating layer can be formed by a simpler method than the conventional method described above.
  • an insulating layer having a contact hole with a small number of steps for example, the use of a screen printing method is also being studied.
  • a mesh plate is formed on the surface of the insulating layer.
  • marks are likely to remain and it is difficult to ensure sufficient flatness.
  • the insulating layer can be formed by a coating method, an insulating layer with good flatness can be formed.
  • Conductive convex portion forming step having liquid repellency prepares a wiring member having a base material and a first electrode formed on the base material.
  • a conductive composition containing a conductive material, a liquid repellent, and a solvent is applied onto the first electrode in a pattern and baked to form a conductive convex portion that is electrically connected to the first electrode and has liquid repellency. It is a process.
  • Wiring member The wiring member used for this process has a base material and a 1st electrode.
  • the first electrode is formed on a substrate.
  • the said 1st electrode should just be formed on the base material, may be directly formed on the base material, and may be formed through the other layer on the base material.
  • the surface of the wiring member in which the first electrode is formed may be referred to as an insulating layer forming surface.
  • the first electrode is usually formed in a pattern on the substrate.
  • the planar view shape of the first electrode can be appropriately selected according to the type of the laminated wiring member manufactured by the manufacturing method of the present invention.
  • Examples of the planar shape of the first electrode include a line shape and a pad shape used for an electrode pad.
  • the material used for the first electrode is not particularly limited as long as it has desired conductivity.
  • a conductive organic material such as (polyethylenedioxythiophene / polystyrenesulfonic acid) can be used.
  • a conductive paste containing conductive fine particles can be used.
  • electroconductive fine particles it can select and use from what is demonstrated in the term of "(2) Conductor composition ink” mentioned later.
  • other components used in the conductive paste can be the same as general components.
  • a solvent, an arbitrary component, etc. described in the section of “(2) Conductor composition ink” described later are used. Can be mentioned.
  • the thickness of the first electrode is not particularly limited as long as the first electrode can have desired conductivity.
  • the thickness is within a range of 30 nm to 5000 nm, particularly within a range of 50 nm to 2000 nm, particularly within a range of 200 nm to 2000 nm. Is preferred. This is because if the thickness of the first electrode is too thick, a step due to the first electrode becomes large, and it may be difficult to form an insulating layer satisfactorily. Moreover, it is because it may become difficult to show favorable electroconductivity when the thickness of a 1st electrode is too thin.
  • thickness refers to a thickness obtained by a general measurement method.
  • a method for measuring the thickness for example, a stylus type method of calculating the thickness by tracing the surface with a stylus to detect unevenness, observation with a transmission electron microscope (TEM), a scanning electron microscope (SEM), etc. Examples thereof include a method for measuring an image, an optical method for calculating the thickness based on a spectral reflection spectrum, and the like.
  • TEM transmission electron microscope
  • SEM scanning electron microscope
  • thickness the average value of the thickness measurement result in the several location of the structure used as object may be used.
  • the wettability of the surface of the first electrode is not particularly limited as long as a desired conductive convex portion can be formed by applying or printing the conductor composition ink in a pattern.
  • the contact angle between the surface of the first electrode and water is in the range of 1 ° to 95 °, in particular in the range of 1 ° to 90 °, in particular 20 ° to It is preferable to be within the range of 90 °. This is because if the contact angle is too large, a difference in liquid repellency and wettability between conductive protrusions to be formed later cannot be formed.
  • the “contact angle with water” refers to the contact angle with water at 25 ° C.
  • the contact angle in the present invention is measured by, for example, dropping 1 microliter of liquid onto a measurement target, observing the shape of the dropped liquid droplet from the side, and measuring the angle formed between the droplet and the measurement target. can do.
  • the contact angle in the present invention can be measured using, for example, a contact angle measuring device manufactured by Imoto Seisakusho. Further, the contact angle in the present invention can be measured using, for example, a contact angle meter DM-901 manufactured by Kyowa Interface Science.
  • a method for forming the first electrode can be the same as a general electrode forming method. Specifically, a method in which a conductive layer is formed on the entire surface of the substrate and then etched into a predetermined pattern using a photolithography method can be given. Examples of a method for forming a conductive layer on the entire surface of the substrate include a vacuum deposition method, a sputtering method, a PVD method such as an ion plating method, a CVD method, and the like.
  • the first electrode can be formed by a printing method using a conductive paste. Examples of the printing method include an ink jet method and a screen printing method. In the present invention, it is particularly preferable that the first electrode is formed by a printing method. This is because the conductive layer formed by the printing method can easily adjust the wettability of the surface of the conductive layer and can easily control the shape of the conductive convex portion as compared with the conductive layer formed by the vapor deposition method or the like.
  • the substrate supports the first electrode. Moreover, the said base material has heat resistance normally.
  • the heat resistance of the substrate is not particularly limited as long as it does not cause deformation or the like due to heating in the manufacturing process of the laminated wiring member.
  • the substrate is not particularly limited as long as it has a predetermined self-supporting property, and a substrate having an arbitrary function can be used depending on the use of the laminated wiring member produced by the present invention.
  • the base material include a rigid base material such as a glass base material and a flexible base material such as a film made of a plastic resin.
  • the plastic resin include polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), polyimide (PI), polyetheretherketone (PEEK), polycarbonate (PC), polyphenylene sulfide ( PPS) and polyetherimide (PEI).
  • the base material may be a single layer or a laminate.
  • a base material is a laminated body, you may have the planarization layer etc. which contain the curable resin formed on the base material mentioned above, for example.
  • the transmittance in the visible light region is preferably 80% or more.
  • the transmittance can be measured according to JIS K7361-1 (plastic-transparent material total light transmittance test method).
  • the wiring member is not particularly limited as long as it has the base material and the first electrode described above, and a necessary configuration can be appropriately selected and added.
  • the wiring member may include a wiring member electrode formed on the substrate and a wiring member insulating layer formed so as to cover the wiring member electrode.
  • the first electrode is formed on the wiring member insulating layer.
  • electrodes other than the first electrode may be formed on the same plane as the first electrode.
  • the planar view shape of the electrodes other than the wiring member electrode and the first electrode can be appropriately selected according to the type of the laminated wiring member manufactured according to the present invention.
  • the material, thickness, and formation method of the electrode other than the wiring member electrode and the first electrode can be the same as the contents described in the above-mentioned section “(a) First electrode”. The description here is omitted.
  • the material of the insulating layer for wiring members is not particularly limited as long as it has insulating properties, and the resin composition described in the section of “2. Insulating layer forming step (3) Insulating layer” described later is used. it can.
  • a material of the insulating layer for wiring members for example, acrylic resin, phenol resin, fluorine resin, epoxy resin, cardo resin, vinyl resin, imide resin, novolac resin, etc. And inorganic materials such as SiO 2 , SiN x , and Al 2 O 3 .
  • the material of the insulating layer for wiring members may be one type or two or more types.
  • the thickness of the insulating layer for wiring members it can select suitably according to the use etc. of the laminated wiring member manufactured by this invention.
  • the insulating layer for wiring members As a method for forming the insulating layer for wiring members, a method for forming an insulating layer described later can be used. Moreover, when the insulating layer for wiring members is an inorganic material, a CVD method etc. can be mentioned, for example.
  • the conductor composition ink used in this step contains a conductive material, a liquid repellent and a solvent.
  • the liquid repellent imparts liquid repellency to the conductive convex portion.
  • the liquid repellent include a fluorine-containing thiol compound that forms a self-assembled monomolecular film.
  • the fluorine-containing thiol compound that forms the self-assembled monomolecular film can provide liquid repellency to the metal particles while ensuring conductivity when metal particles are used as the conductive material described later.
  • the conductive protrusions obtained with the conductor composition ink can achieve both conductivity and liquid repellency.
  • Examples of the fluorine-containing thiol compound that forms a self-assembled monolayer include a fluorine-containing thiol compound having an aromatic ring and an alkanethiol having a fluorinated moiety.
  • a fluorine-containing thiol compound having an aromatic ring and an alkanethiol having a fluorinated moiety are preferable from the surface modification property of the metal particles.
  • fluorine-containing thiol having an aromatic ring and having 6 to 20 carbon atoms include trifluoromethylbenzenethiol such as 4-trifluoromethylbenzenethiol and 3-trifluoromethylbenzenethiol, and pentafluorobenzene.
  • the content of the lyophobic agent is preferably 10% by mass or less, and more preferably 5% by mass or less, based on the total amount of the conductor composition ink. If content of a liquid repellent is below the said upper limit, the dispersibility of the electroconductive material in conductor composition ink will not be inhibited. Moreover, it is preferable that a minimum is 0.1 mass% or more from a liquid repellent viewpoint of the electroconductive convex part obtained with conductor composition ink.
  • the conductive material is the origin of the conductivity of the conductive protrusion. Although it will not specifically limit as a conductive material if desired electroconductivity can be provided to a conductive convex part, It is preferable that it is a metal particle.
  • the metal species of the metal particles include silver, copper, nickel, palladium, platinum, and gold. In addition, these may be used individually by 1 type and may use 2 or more types together. Among these, silver is particularly preferable from the viewpoint of affinity with the above-described liquid repellent.
  • the metal particles preferably have an average particle diameter of 10 nm to 1000 nm. Moreover, you may include metal nanowire with a diameter of 50 nm or less.
  • the average particle diameter of the metal particles can be measured by observation with a transmission electron microscope (TEM). Specifically, in a visual field including about 50 particles, there is a method of measuring the projected area equivalent circle diameter of all the particles and calculating the average.
  • TEM transmission electron microscope
  • the content of the conductive material is preferably 15% by mass to 75% by mass and more preferably 20% by mass to 50% by mass with respect to the total amount of the conductor composition ink. If content of an electroconductive material is in the said range, an electroconductive convex part can be formed more efficiently.
  • (C) Solvent The solvent disperses or dissolves the conductive material and the liquid repellent.
  • Solvents include water, alcohol solvents (monoalcohol solvents, diol solvents, polyhydric alcohol solvents), hydrocarbon solvents, ketone solvents, ester solvents, ether solvents, glyme solvents, halogen solvents. Is mentioned. These solvents may be used alone or in a combination of two or more. Among these, a diol solvent is preferable from the viewpoint of printability.
  • the surface tension of a solvent is 40 mN / m or more and 65 mN / m or less in 25 degreeC. When the surface tension of the solvent is within the above range, the conductor composition ink can be sufficiently adhered to the ground. The surface tension can be measured by a pendant drop method.
  • Examples of the diol solvent having a surface tension of 40 mN / m or more and 65 mN / m or less at 25 ° C. include ethylene glycol, glycerin, and 1,3-propanediol. Among these, ethylene glycol is particularly preferable.
  • the content of the solvent is preferably 25% by mass or more and 85% by mass or less, and more preferably 50% by mass or more and 80% by mass or less with respect to the total amount of the conductor composition ink.
  • the conductor composition ink can be appropriately applied.
  • the conductor composition ink of the present invention may contain an optional component in addition to the components described above.
  • examples of various optional components include dispersants. These optional components are preferably 10% by mass or less based on the total amount of the conductor composition ink.
  • the conductor composition ink is applied in a pattern on the first electrode.
  • “applying the conductor composition ink in a pattern” means applying the conductor composition ink so as to have a predetermined planar view shape on the first electrode, and the first electrode is formed. This does not include the case where the conductor composition ink is applied to the entire surface of the wiring member.
  • the conductor composition ink 3 ′ may be applied only on the first electrode 22.
  • the conductor composition ink 3 ′ may be applied on the first electrode 22 and in the vicinity thereof.
  • the conductor composition ink 3 ′ is usually applied on the first electrode 22 and applied so as not to conduct with the other electrode 23 adjacent to the first electrode 22.
  • FIGS. 2A and 2B are explanatory views for explaining the application position of the conductor composition ink.
  • the method for applying the conductor composition ink is not particularly limited as long as the method can apply the conductor composition ink in a predetermined pattern on the first electrode.
  • the ink jet method, the dispenser method, the screen printing method. , Gravure printing method, relief printing method and the like for example, it is particularly preferable to use an ink jet method. This is because it is easy to apply the conductor composition ink onto the first electrode.
  • the method for firing the conductor composition ink applied on the first electrode is not particularly limited as long as the solvent contained in the conductor composition ink can be removed and the conductor composition ink can be solidified. Can be used. Specifically, it can be fired using a hot plate or the like.
  • a treatment for accelerating the migration of the liquid repellent by irradiating ultrasonic waves or the like before or during firing may be performed.
  • firing temperature and firing time in this step are appropriately adjusted according to the type of solvent, liquid repellent and the like contained in the conductor composition ink.
  • the firing temperature in this step is not particularly limited as long as it is a temperature at which the solvent contained in the conductor composition ink can be removed, but it is in the range of 100 ° C. to 180 ° C., particularly in the range of 100 ° C. to 160 ° C. Of these, it is particularly preferable to be within the range of 110 ° C to 150 ° C. This is because if the firing temperature is too high, the conductive material may deteriorate, making it difficult to exhibit desired conductivity. In addition, when the firing temperature is too low, the solvent remains in the conductive protrusions, which may cause impurities to be mixed into the insulating layer in the insulating layer forming step described later.
  • the firing time in this step is not particularly limited as long as it is a temperature at which the solvent contained in the conductor composition ink can be removed, but is within the range of 10 to 60 minutes, and in particular, 15 to 60 minutes. Preferably, it is within the range of 30 minutes to 60 minutes. If the firing time is too short, it is difficult to sufficiently transfer the liquid repellent of the conductor composition ink, and thus it may be difficult to improve the liquid repellency of the conductive protrusions. Because. Further, if the firing time is too long, the conductive material or the like may be deteriorated and it may be difficult to exhibit desired conductivity. Moreover, it is because productivity may fall.
  • the conductive convex part formed by this process is formed on a 1st electrode. Further, the conductive convex portion has liquid repellency.
  • “the conductive convex portion has liquid repellency” means that the contact angle between the surface of the conductive convex portion and water is the contact angle between the surface of the first electrode and water and the formation surface of the insulating layer and water. That is larger than the contact angle. Specifically, the difference between the contact angle between the conductive convex surface and water and the contact angle between the first electrode surface and water is 5 ° or more, preferably 20 ° or more. Say.
  • the difference in contact angle between the two is small, it may be difficult to form a contact hole using the difference in wettability when a resin composition is applied on a wiring member on which conductive protrusions are formed. Because there is.
  • the upper limit value of the difference in the contact angle is appropriately determined according to the material of the conductive convex portion, the material of the first electrode, and the like, and is not particularly limited, but is about 100 °, for example.
  • the difference between the contact angle between the surface of the conductive protrusion and water and the contact angle between the surface on which the insulating layer is formed and water is 5 ° or more, preferably 20 ° or more. . If the difference in contact angle between the two is small, it may be difficult to form a contact hole using the difference in wettability when a resin composition is applied on a wiring member on which conductive protrusions are formed. Because there is. Further, the upper limit value of the difference in the contact angle is appropriately determined according to the material of the conductive convex portion, the material of the formation surface of the insulating layer such as the base material, etc., and is not particularly limited. is there.
  • the formation position of the conductive projection is usually the same as the application position of the conductor composition ink described above.
  • the conductive convex portion has liquid repellency.
  • the liquid repellency of the conductive convex portion is not particularly limited as long as a contact hole can be formed in the region where the conductive convex portion is formed by repelling a resin composition used in an insulating layer forming step described later.
  • the contact angle between the surface of the conductive protrusion and water is preferably 90 ° or more, and more preferably in the range of 100 ° to 120 °. This is because if the contact angle is too small, it is difficult to repel the resin composition applied on the conductive protrusions, and it may be difficult to form a contact hole.
  • the shape of the conductive convex portion in plan view is not particularly limited as long as a contact hole can be formed, and examples thereof include a circular shape, an elliptical shape, a rectangular shape, and a polygonal shape. Especially, as a planar view shape of an electroconductive convex part, it is preferable that they are circular shape and elliptical shape.
  • Examples of the longitudinal cross-sectional shape of the conductive convex portion include a semicircular shape as shown in FIG. 3A, a semi-elliptical shape as shown in FIG. 3B, a trapezoidal shape, a rectangular shape, etc. (not shown). Can do. Moreover, these shapes may have a flat part or a hollow in the center. In addition, in FIG.3 (c), the shape which has a flat part in the center of a semi-elliptical shape is shown.
  • FIGS. 3A to 3C are explanatory views for explaining the longitudinal sectional shape of the conductive convex portion in the present invention.
  • the longitudinal cross-sectional shape of the conductive convex portion refers to the cross-sectional shape of the conductive convex portion perpendicular to the base material.
  • the size of the conductive convex portion is not particularly limited as long as a contact hole capable of conducting the first electrode and the second electrode through the conductive convex portion can be formed.
  • the conductive convex portion has a size of 1 ⁇ m to 5000 ⁇ m. Within the range, it is particularly preferable to be within the range of 5 ⁇ m to 1000 ⁇ m, particularly within the range of 10 ⁇ m to 100 ⁇ m. This is because if the conductive convex portion is too large, it may be difficult to achieve high definition and high integration of the laminated wiring member manufactured according to the present invention.
  • the “size of the conductive convex portion” refers to the size of the conductive convex portion in a plan view shape.
  • the diameter is referred to, and the planar view shape is a square shape. In the case, it means the width of one side.
  • the shape in plan view is a shape having a short side and a long side such as a rectangle or an ellipse, the width of the short side is meant.
  • the planar view shape is a polygonal shape, it refers to the diameter of the inscribed circle.
  • the size of the conductive protrusion refers to the distance indicated by u in FIG.
  • the height of the conductive protrusion is not particularly limited as long as it can be electrically connected to the second electrode, but is preferably in the range of 10 nm to 2000 nm, and more preferably in the range of 100 nm to 1000 nm. If the height of the conductive protrusion is too high, it may be difficult to make the flatness of the surface on the second electrode side of the laminated wiring member manufactured according to the present invention, This is because when the height of the conductive convex portion is too low, it may be difficult for the conductive convex portion to exhibit desired conductivity.
  • the “height of the conductive convex portion” refers to the value of the portion where the distance in the vertical direction from the base material is maximum in the longitudinal sectional shape of the conductive convex portion, and will be described later with reference to FIGS. ) In x).
  • the aspect ratio (height / size) of the conductive protrusion is not particularly limited as long as a contact hole can be formed, but it is within the range of 0.001 to 1, particularly 0.01 to 0.5. Within the range, particularly preferably within the range of 0.01 to 0.1. This is because, when the aspect ratio of the conductive convex portion is too large, it may be difficult to form the conductive convex portion itself, or the conductive convex portion may be easily damaged. Further, when the aspect ratio of the conductive convex portion is too small, it may be difficult for the conductive convex portion to exhibit sufficient conductivity and liquid repellency.
  • the conductive convex portion is formed by forming a coating film of a resin composition on the wiring member on which the conductive convex portion is formed and curing it. Forming an insulating layer having a contact hole in the region.
  • the resin composition used in this step contains at least a resin and, if necessary, other components such as a polymerization initiator.
  • the resin is a concept including a polymer in addition to a monomer and an oligomer.
  • the resin include ionizing radiation curable resins such as acrylate, epoxy, and polyester, and thermosetting resins such as acrylate, urethane, epoxy, and polysiloxane.
  • the ionizing radiation means electromagnetic waves or charged particles having energy that can be cured by polymerizing molecules. For example, all ultraviolet rays (UV-A, UV-B, UV-C), visible rays, gamma rays , X-rays, electron beams and the like.
  • a thermosetting resin is preferable. This is because by using a thermosetting resin, the insulating properties of the insulating layer can be made better.
  • the resin composition usually contains a solvent.
  • the solvent contained in the resin composition can be appropriately selected according to the liquid repellency of the conductive protrusions, the wettability of the base on which the insulating layer is formed, the viscosity, etc. It can be the same as that used.
  • the resin composition further contains a polymerization initiator, a photosensitizer, an antioxidant, a polymerization inhibitor, a crosslinking agent, an infrared absorber, an antistatic agent, a viscosity modifier, an adhesion improver, etc., if necessary. You can also
  • the resin composition may have a pigment or the like. Examples of the pigment include carbon black and titanium black.
  • the viscosity of the resin composition is not particularly limited as long as it has a predetermined coating property and can be repelled by the liquid repellency of the conductive convex portion.
  • the specific viscosity of the resin composition at 25 ° C. is in the range of 1.0 mPa ⁇ s to 10000 mPa ⁇ s, in particular in the range of 5 mPa ⁇ s to 1000 mPa ⁇ s, particularly 20 mPa ⁇ s to 500 mPa ⁇ s. It is preferable to be within the range.
  • the viscosity measurement method is not particularly limited as long as the viscosity can be accurately measured.
  • a method using a viscosity measuring device such as a rheometer, a B-type viscometer, a capillary viscometer, etc. Is mentioned.
  • a digital viscometer (Eihiro Seiki Co., Ltd. DV-E) can be used as a measuring method of a viscosity.
  • the surface tension of the resin composition is not particularly limited as long as it has a predetermined coating property and can be repelled by the liquid repellency of the conductive convex portion.
  • the specific surface tension of the resin composition is preferably in the range of 5 mN / m to 70 mN / m at 25 ° C., particularly in the range of 20 mN / m to 50 mN / m. This is because if the surface tension of the resin composition is too low or the surface tension of the resin composition is too high, it may be difficult to form an insulating layer.
  • the method for measuring the surface tension is not particularly limited as long as the surface tension can be accurately measured.
  • the Wilhelmy method plate method
  • the hanging drop method pendant drop method
  • Young -Laplace method du Nouy method
  • a high-precision surface tension meter Kyowa Interface Science DY-700
  • an insulating layer is formed by apply
  • a coating method is not particularly limited as long as an insulating layer having a desired thickness can be formed, and a general coating method can be used. Specifically, a slit coating method, a spin coating method, a die coating method, Examples thereof include a roll coating method, a bar coating method, an LB method, a dip coating method, a spray coating method, a blade coating method, and a casting method. In the present invention, it is particularly preferable to use a slit coat method. This is because the flatness of the insulating layer can be improved.
  • the thickness of the coating film of the resin composition is not particularly limited as long as an insulating layer having a contact hole can be formed in the region where the conductive convex portions are formed, and the resin composition is higher than the height of the conductive convex portions.
  • the thickness of the coating film of the object may be thick, may be equal, or may be thin.
  • the thickness of the coating film of a resin composition is thicker than the height of an electroconductive convex part, the said coating film may be formed so that an electroconductive convex part may be covered.
  • the method for curing the coating film of the resin composition is appropriately selected according to the type of resin. Moreover, since a general hardening method can be used, description here is abbreviate
  • Insulating layer The insulating layer in this invention is formed in order to insulate a 1st electrode and the 2nd electrode mentioned later.
  • the insulating layer has a contact hole formed on a region where the conductive protrusion is formed.
  • the thickness of the insulating layer is not particularly limited as long as the first electrode and the second electrode can be insulated. As shown in FIG. 5A, the thickness of the insulating layer 4 is higher than the height x of the conductive protrusion 3. The thickness y may be large, and as shown in FIG. 5 (b), the height x of the conductive protrusion 3 and the thickness y of the insulating layer 4 may be equivalent, as shown in FIG. 5 (c). Thus, the thickness y of the insulating layer 4 may be smaller than the height x of the conductive protrusion 3.
  • the thickness of the insulating layer is larger than the height of the conductive protrusion described above, or that the height of the conductive protrusion described above is equal to the thickness of the insulating layer. It is particularly preferable that the thickness of the insulating layer is larger than the height of the convexity. This is because the second electrode can be formed inside the contact hole, so that the first electrode and the second electrode can be conducted well. In addition, since the surface on which the second electrode of the laminated wiring member manufactured according to the present invention is formed can be made flatter, the laminated wiring member can be arranged with good lamination with other configurations. Because it can.
  • Insulating layer thickness refers to the distance in the thickness direction of the insulating layer from the surface of the first electrode.
  • the “thickness of the insulating layer” refers to the distance in the thickness direction from the surface of the first electrode to the surface of the insulating layer in the flat portion of the insulating layer, and is indicated by y in FIGS. 5 (a) to 5 (c).
  • y is indicated by FIGS. 5 (a) to 5 (c).
  • the thickness of the insulating layer When the thickness of the insulating layer is larger than the height of the conductive convex portion, the thickness of the insulating layer may be in the range of 1.5 to 5 times the height of the conductive convex portion. preferable. This is because by setting the ratio of the thickness of the insulating layer to the height of the conductive convex portion within the above range, the conductive convex portion and the second electrode can be more easily conducted in the contact hole.
  • the thickness of the insulating layer is not particularly limited as long as the first electrode and the second electrode can be insulated, and can be appropriately selected according to the use of the laminated wiring member produced according to the present invention, but is not particularly limited. , Preferably in the range of 0.1 ⁇ m to 10 ⁇ m, and more preferably in the range of 0.5 ⁇ m to 5 ⁇ m. This is because if the insulating layer is too thick, it may be difficult to provide a contact hole due to the liquid repellency of the conductive protrusion. Moreover, it is because it may become difficult to show sufficient insulation if the thickness of an insulating layer is too thin.
  • the insulating layer formed by this step has a contact hole in the region where the conductive protrusion is formed.
  • the positional relationship between the contact hole and the conductive protrusion is not particularly limited as long as the contact hole is provided in at least a part of the region where the conductive protrusion is formed.
  • a contact hole may be provided in a part of the conductive convex portion, and as shown in FIG. 5A, the size of the conductive convex portion and the size of the opening on the base material side of the contact hole
  • the contact hole may be provided so that the opening on the base material side of the contact hole includes the conductive convex portion and the vicinity thereof. May be provided.
  • the positional relationship between the contact hole and the conductive protrusion can be adjusted by the liquid repellency of the conductive protrusion, the viscosity and surface tension of the resin composition, and the like.
  • planar shape of the contact hole is usually the same shape as the planar shape of the conductive protrusion described above.
  • the vertical cross-sectional shape of the contact hole is not particularly limited as long as it can be electrically connected to the second electrode described later in the contact hole, but the size of the opening on the base material side and the opening on the second electrode side of the contact hole is not limited. May be the same vertical shape, or may be a forward taper shape in which the size of the opening on the substrate side of the contact hole is smaller than the size of the opening on the electrode side.
  • the size of the opening on the substrate side of the contact hole is not particularly limited as long as the second electrode and the conductive convex portion can be electrically connected in the contact hole, but within the range of 1 ⁇ m to 5000 ⁇ m, In particular, it is preferably in the range of 5 ⁇ m to 200 ⁇ m, particularly in the range of 10 ⁇ m to 100 ⁇ m. This is because if the size of the opening on the substrate side of the contact hole is too small, it may be difficult to form the second electrode in the contact hole. Moreover, if the size of the opening on the base material side of the contact hole is too large, it may be difficult to achieve high definition of the laminated wiring member manufactured according to the present invention.
  • the “size of the opening on the base material side of the contact hole” means the size of the opening on the base material side of the contact hole in a plan view.
  • size of planar view shape since it can be the same as that of the content demonstrated by the magnitude
  • an insulating layer having a contact hole can be formed in the region where the conductive convex portion is formed, and the thickness of the insulating layer becomes larger than the height of the conductive convex portion.
  • the insulating layer may be formed as described above, or the insulating layer may be formed so that the height of the conductive convex portion is equal to the thickness of the insulating layer, and the insulating layer is higher than the height of the conductive convex portion. You may form the said insulating layer so that the thickness of a layer may become small.
  • the insulating layer may be formed so that the height of the conductive protrusion is equal to the thickness of the insulating layer or the thickness of the insulating layer is larger than the height of the conductive protrusion.
  • At least one insulating layer can be formed, and a plurality of insulating layers may be formed.
  • the second electrode formation step in the present invention is a step of forming a second electrode on the insulating layer so as to be electrically connected to the conductive convex portion in the contact hole.
  • the material used for the second electrode is not particularly limited as long as it has a desired conductivity, and can be appropriately selected from those described in the section of the first electrode.
  • the second electrode is usually formed in a pattern on the insulating layer.
  • the planar view shape of the second electrode can be appropriately selected according to the type of the laminated wiring member manufactured by the manufacturing method of the present invention.
  • the method of forming the second electrode can be the same as the content of the method of forming the first electrode described above, and thus the description thereof is omitted here.
  • the thickness of a 2nd electrode it is set as the thickness more than the difference of the thickness of the above-mentioned insulating layer and the thickness of an electroconductive convex part normally. This is because it may be difficult to obtain electrical continuity if the thickness is less than the difference between the thickness of the insulating layer and the conductive protrusion.
  • the thickness is preferably in the range of 30 nm to 5000 nm, more preferably in the range of 50 nm to 4000 nm, and particularly preferably in the range of 200 nm to 2000 nm.
  • the conductive protrusions may be hydrophilized before forming the second electrode.
  • the hydrophilization treatment is not particularly limited as long as the decrease in the conductivity of the conductive convex portion can be suppressed and the contact angle between the conductive convex portion surface and water can be reduced.
  • hydrogen plasma is used. Can be mentioned.
  • the method for manufacturing a laminated wiring member of the present invention is not particularly limited as long as it has the above-described steps, and a necessary configuration can be appropriately selected and added. For example, the process etc. which form the wiring member mentioned above can be mentioned.
  • the method for producing a laminated wiring member of the present invention can be used for a method for producing a device having a laminated structure in which two electrodes are conducted through a contact hole.
  • a semiconductor element for example, a semiconductor element, a touch panel sensor, an RF- Examples include methods for producing ID (Radio Frequency Identification), organic electroluminescence elements, and the like.
  • ID Radio Frequency Identification
  • organic electroluminescence elements for example, it is particularly preferable that the laminated wiring member is a semiconductor element.
  • the manufacturing method of the semiconductor element of the present invention includes a base material, a source electrode and a drain electrode formed on the base material, and a semiconductor formed in a channel region between the source electrode and the drain electrode.
  • a wiring member having a layer is prepared, and a conductive composition ink containing a conductive material, a liquid repellent agent, and a solvent is applied in a pattern on the drain electrode and baked, whereby the drain electrode becomes conductive and has liquid repellency.
  • semiconductor transistor refers to a configuration having a source electrode, a drain electrode, a semiconductor layer, and a gate electrode.
  • FIG. 6A a base 31, a gate electrode 32 formed on the base 31, and a gate insulation formed so as to cover the gate electrode 32.
  • a wiring member 2 having a layer 33, a source electrode 34 and a drain electrode 35 formed on the gate insulating layer 33, and a semiconductor layer 36 formed in a channel region between the source electrode 34 and the drain electrode 35 is prepared.
  • a conductive composition ink containing a conductive material, a liquid repellent, and a solvent is applied onto the drain electrode in a pattern and baked, thereby conducting with the drain electrode 35 as shown in FIG. 6B.
  • the conductive convex part 3 which has liquid property is formed (conductive convex part formation process).
  • a passivation layer 37 is formed as an insulating layer having the contact hole 5 in the formed region (insulating layer forming step).
  • external input / output electrodes 38 are formed on the passivation layer 37 so as to be electrically connected to the conductive protrusions 3 in the contact holes 5 (electrode formation step).
  • the semiconductor element 30 can be manufactured through the above steps.
  • FIGS. 7A to 7C are process diagrams showing another example of the method for manufacturing a semiconductor device of the present invention.
  • 7A to 7C an example of manufacturing a semiconductor element having a bottom gate top contact type semiconductor transistor will be described.
  • the insulating layer forming step in the present invention two or more insulating layers may be formed.
  • a source electrode 34, a drain electrode 35, and a semiconductor layer 36 are formed.
  • a coating film of the light-shielding resin composition is formed on the passivation layer 37 to be cured.
  • Layer 39 may be formed.
  • FIG. 7C shows a process of forming the external input / output electrode 38 on the passivation layer 37. Reference numerals that are not described in FIGS. 7A to 7C can be the same as those described in FIGS. 6A to 6D, and thus description thereof is omitted here.
  • FIG. 8A a base material 31, a source electrode 34 and a drain electrode 35 formed on the base material 31, and the source electrode 34 and the above-mentioned
  • the wiring member 2 having the semiconductor layer 36 formed in the channel region between the drain electrodes 35a is prepared.
  • a conductive composition ink containing a conductive material, a liquid repellent, and a solvent is applied in a pattern on the drain electrode and baked, thereby conducting the drain electrode 35a as shown in FIG.
  • Conductive convex portions 3a having liquid repellency are formed (conductive convex portion forming step).
  • a coating film of a resin composition is formed so as to cover the source electrode, the drain electrode, and the semiconductor layer, and is cured, as shown in FIG.
  • a gate insulating layer 33 is formed as an insulating layer having a contact hole 5a in the region where the convex portion 3a is formed (insulating layer forming step).
  • the gate electrode 32 is formed on the gate insulating layer 33.
  • an intermediate electrode 35b is formed on the gate insulating layer 33 so as to be electrically connected to the conductive protrusion 3a in the contact hole 5a simultaneously with the gate electrode 32 (electrode formation step).
  • the conductor composition ink is again applied in a pattern on the intermediate electrode 35b and baked, as shown in FIG. Then, conductive protrusions 3b that are electrically connected to the intermediate electrode 35b and have liquid repellency are formed.
  • the passivation layer 37 having the contact hole 5b is formed by applying and curing the resin composition so as to cover the gate electrode and the intermediate electrode.
  • an external input / output electrode 38 is formed on the passivation layer 37 so as to be electrically connected to the conductive protrusion 3b in the contact hole 5b.
  • the semiconductor element 30 can be manufactured through the above steps.
  • FIG. 9 is a schematic cross-sectional view showing an example of a semiconductor device manufactured according to the present invention, and shows an example of a semiconductor device having a top gate top contact type semiconductor transistor.
  • an insulating layer having a contact hole can be formed by a simple method by having the conductive convex portion forming step and the insulating layer forming step.
  • Conductive convex portion forming step The conductive convex portion forming step in the present invention is formed in a base material, a source electrode and a drain electrode formed on the base material, and a channel region between the source electrode and the drain electrode.
  • a conductive member containing a conductive material, a liquid repellent agent and a solvent is applied in a pattern on the drain electrode and baked, thereby conducting the liquid electrode and making the liquid electrode repellent. It is the process of forming the conductive convex part which has property.
  • Wiring member used for this process has a base material, a source electrode and a drain electrode, and a semiconductor layer. Each configuration will be described below. In addition, about the base material, since it can be made to be the same as that of the content demonstrated by the term of the "A. manufacturing method of a laminated wiring member” mentioned above, description here is abbreviate
  • Source electrode and drain electrode are formed so as to have a desired channel region between the source electrode and the drain electrode.
  • the source electrode and the drain electrode may be formed directly on the base material, or may be formed on the gate insulating layer as described later.
  • the size of the channel region between the source electrode and the drain electrode is appropriately selected according to the use of the semiconductor element and is not particularly limited.
  • the channel length is not particularly limited as long as a semiconductor layer can be formed in the channel region, but is preferably in the range of 1 ⁇ m to 100 ⁇ m, particularly in the range of 3 ⁇ m to 50 ⁇ m, and more preferably in the range of 5 ⁇ m to 10 ⁇ m. It is preferable to be within the range.
  • the channel length refers to the distance between the source electrode and the drain electrode.
  • the material for the source electrode and the drain electrode can be selected from the materials for the first electrode described in the section “A. Manufacturing Method for Laminated Wiring Member”. Further, the thickness and the formation method of the source electrode and the drain electrode can be the same as the contents of the first electrode described in the above-mentioned section “A. Manufacturing method of laminated wiring member”. Is omitted.
  • the semiconductor layer is formed in a region including the channel region between the source electrode and the drain electrode.
  • the semiconductor layer imparts semiconductor characteristics to the semiconductor transistor.
  • the formation position of the semiconductor layer is appropriately selected according to the structure of the semiconductor transistor, and is usually on the substrate 31 as shown in FIGS. 8A and 9 or as shown in FIGS. 6A and 7A. Thus formed on the gate insulating layer 33. Further, as shown in FIGS. 6A and 8A, a semiconductor layer 36 may be formed on the source electrode 34 and the drain electrode 35. As shown in FIGS. A source electrode 34 and a drain electrode 35 may be formed on the semiconductor layer 36.
  • the semiconductor layer is not particularly limited as long as it is formed in the channel region between the source electrode and the drain electrode, and the specific pattern shape and the like can be the same as those used for known semiconductor elements. Explanation here is omitted.
  • the semiconductor layer may be an organic semiconductor layer or an inorganic semiconductor layer.
  • the material, thickness, and formation method of the organic semiconductor layer can be the same as those used for a general organic semiconductor layer, and examples include those described in JP 2012-256784 A.
  • the material, thickness, and formation method of the inorganic semiconductor layer can be the same as those used for a general inorganic semiconductor layer, and examples include those described in JP2013-127428A. it can.
  • (C) Gate electrode and gate insulating layer When the semiconductor element manufactured according to the present invention has a bottom gate type semiconductor transistor, the gate electrode and the source electrode and the drain electrode are usually disposed between the base member of the wiring member and the source electrode and the drain electrode. A gate insulating layer is formed.
  • Gate insulating layer used for the wiring member is formed so as to insulate the gate electrode from the source electrode and the drain electrode, and is usually shown in FIGS. As shown in FIG.
  • the material, thickness, and formation method of the gate insulating layer can be the same as the contents of the insulating layer for a wiring member described in the above-mentioned section “A. Manufacturing method of laminated wiring member”. Description of is omitted.
  • Gate electrode used for a wiring member is normally formed on the base material 31, as shown to Fig.6 (a) and FIG.7 (a).
  • the material for the gate electrode can be selected from the materials for the first electrode described in the section “A. Manufacturing Method for Laminated Wiring Member”. Further, the thickness and the forming method of the gate electrode can be the same as the thickness and the forming method of the first electrode described in the above-mentioned section “A. Manufacturing method of laminated wiring member”, and therefore the description here. Is omitted.
  • the conductive convex portion is formed by forming a coating film of a resin composition so as to cover the source electrode, the drain electrode and the semiconductor layer, and curing the coating. In this step, an insulating layer having a contact hole is formed in the formed region.
  • the insulating layer forming step may be the same as the content described in the above-mentioned section “A. Method for manufacturing a laminated wiring member”, and thus the description thereof is omitted here.
  • the insulating layer formed in this step is appropriately selected according to the structure of the semiconductor transistor.
  • the semiconductor element manufactured according to the present invention includes a top-gate semiconductor transistor, at least a gate insulating layer is formed as the insulating layer.
  • the semiconductor element manufactured according to the present invention includes a bottom gate type semiconductor transistor, at least one of a passivation layer and a light shielding layer is formed as an insulating layer.
  • the light shielding layer is provided to prevent light irradiation to the organic semiconductor layer when the semiconductor layer described above contains an organic semiconductor material. By forming the light shielding layer, an increase in off current and deterioration of the organic semiconductor layer over time can be suppressed.
  • the resin composition contains a light shielding material.
  • the light-shielding material can be the same as that used for a general organic semiconductor element, and thus description thereof is omitted here.
  • the passivation layer is provided in order to prevent the semiconductor layer from deteriorating due to the action of moisture and oxygen present in the air.
  • a gate insulating layer, a light shielding layer, and a passivation layer can be formed, and two or more layers may be stacked.
  • the thickness of each layer, contact holes, and the like can be the same as the thickness of the insulating layer and contact holes described in the above-mentioned section “A. Manufacturing method of laminated wiring member”. Omitted.
  • Electrode forming step is a step of forming an intermediate electrode or an external input / output electrode on the insulating layer so as to be electrically connected to the conductive convex portion in the contact hole.
  • the electrode formed by this step is appropriately selected according to the structure of the semiconductor transistor.
  • the semiconductor element manufactured according to the present invention includes a top gate type semiconductor transistor
  • an intermediate electrode may be formed together with the gate electrode.
  • the intermediate electrode is used to connect the drain electrode and the external input / output electrode.
  • external input / output electrodes may be formed on the passivation layer.
  • the semiconductor device manufactured according to the present invention has a bottom gate type semiconductor transistor, external input / output electrodes are formed on the passivation layer.
  • the electrode forming step can be the same as the content of the second electrode forming step described in the above-mentioned section “A. Method for manufacturing a laminated wiring member”, and thus the description thereof is omitted here.
  • the external input / output electrodes formed by this step can be the same as those used for general semiconductor elements.
  • a pixel electrode can be given.
  • an input electrode can be mentioned.
  • plan view shapes of the external input / output electrode and the intermediate electrode can be appropriately selected according to the application of the semiconductor element manufactured according to the present invention.
  • the method for manufacturing a semiconductor element of the present invention is not particularly limited as long as it has the above-described steps, and necessary steps can be appropriately selected and added.
  • a step of forming a passivation layer on the intermediate electrode, and an external input / output on the passivation layer is performed.
  • a passivation layer 37 having a contact hole 5b may be formed by using the conductive protrusion 3b.
  • the semiconductor transistor included in the semiconductor device manufactured according to the present invention may be in any form of bottom gate top contact type, bottom gate bottom gate type, top gate top contact type, or top gate bottom contact type. .
  • the semiconductor element manufactured by the present invention can be used as a TFT array substrate of a display device using a TFT method.
  • a display device examples include a liquid crystal display device, an electrophoretic display device, and an organic EL display device.
  • the semiconductor element can also be used for a temperature sensor, a pressure sensor, or the like.
  • the laminated wiring member of the present invention includes a base material, a first electrode formed on the base material, and a conductive protrusion formed in a pattern on the first electrode and electrically connected to the first electrode. Formed on the base material on which the first electrode is formed and having a contact hole in the region where the conductive convex portion is formed, and an insulating layer containing resin, and formed on the insulating layer And a second electrode that is electrically connected to the conductive convex portion in the contact hole, wherein the insulating layer has a thickness greater than a height of the conductive convex portion.
  • FIG. 1 As a schematic sectional view showing an example of the laminated wiring member of the present invention, for example, FIG.
  • the thickness of the insulating layer is larger than the height of the conductive convex portion, the conductive convex portion and the second electrode can be favorably conducted in the contact hole. Therefore, the first electrode and the second electrode can be satisfactorily conducted through the insulating layer.
  • the conductive convex part in this invention is formed in a pattern shape on a 1st electrode, and is a conduction
  • the conductive convex portion is not particularly limited as long as it can conduct with the first electrode and the second electrode, and usually includes a conductive material. In the present invention, it is preferable to further contain a liquid repellent.
  • a conductive convex part it is preferable that it is formed using the conductor composition ink containing a conductive material, a liquid repellent, and a solvent, for example. This is because the method described in the above-mentioned section “A. Manufacturing method of laminated wiring member” can be used.
  • the details of the conductive protrusions and the method of forming the conductive protrusions can be the same as the contents described in the above-mentioned section “A. Manufacturing method of laminated wiring member”. Omitted.
  • Insulating layer The insulating layer in this invention is formed on the base material in which the 1st electrode was formed, has a contact hole in the area
  • the thickness of the insulating layer is not particularly limited as long as it is larger than the height of the conductive protrusion, but for example, it is preferably in the range of 1.5 to 5 times the height of the conductive protrusion. . This is because the conductive convex portion and the second electrode are easily conducted.
  • the details of the insulating layer can be the same as the contents described in the above-mentioned section “A. Manufacturing method of laminated wiring member”, and thus the description thereof is omitted here.
  • Laminated Wiring Member Regarding the laminated wiring member of the present invention, matters other than those described above can be the same as the contents described in the section of “A. Manufacturing Method of Laminated Wiring Member”, and thus description thereof is omitted here. Moreover, the laminated wiring member of this invention can be manufactured by the manufacturing method demonstrated in the term of the "A. Manufacturing method of laminated wiring member” mentioned above, for example.
  • the semiconductor element of the present invention includes a base material, a source electrode and a drain electrode formed on the base material, a semiconductor layer formed in a channel region between the source electrode and the drain electrode, and the drain A conductive projection formed in a pattern on the electrode and electrically connected to the drain electrode, and formed on the substrate on which the source electrode, the drain electrode and the semiconductor layer are formed, and the conductive projection is formed.
  • FIG. 1 As a schematic sectional view showing an example of the semiconductor element of the present invention, for example, FIG.
  • the drain electrode can be electrically connected to the intermediate electrode or the external input / output electrode through the insulating layer.
  • the conductive convex part in this invention is formed in a pattern shape on a drain electrode, and is a conduction
  • the conductive convex portion in the present invention is not particularly limited as long as it can be electrically connected to the drain electrode and the intermediate electrode or the external input / output electrode, and usually includes a conductive material. In the present invention, it is preferable to further contain a liquid repellent.
  • a conductive convex part it is preferable that it is formed using the conductor composition ink containing a conductive material, a liquid repellent, and a solvent, for example. This is because the method described in the above-mentioned section “B. Manufacturing Method of Semiconductor Device” can be used.
  • the insulating layer in the present invention is formed on a substrate on which a source electrode, a drain electrode, and a semiconductor layer are formed, has a contact hole in a region where a conductive convex portion is formed, and contains a resin.
  • the thickness of the insulating layer is larger than the height of the conductive protrusion.
  • the thickness of the insulating layer is not particularly limited as long as it is larger than the height of the conductive protrusion, but for example, it is preferably in the range of 1.5 to 5 times the height of the conductive protrusion. . This is because the conductive convex portion and the intermediate electrode or the external input / output electrode are easily conducted.
  • the details of the insulating layer can be the same as the contents described in the above-mentioned section “B. Manufacturing Method of Semiconductor Device”, and thus the description thereof is omitted here.
  • the semiconductor element of the present invention can be the same as the contents described in the above-mentioned section “B. Manufacturing Method of Semiconductor Element”, and thus the description thereof is omitted here.
  • the semiconductor element of the present invention can be manufactured by, for example, the manufacturing method described in the above-mentioned section “B. Manufacturing Method of Semiconductor Element”.
  • the present invention is not limited to the above embodiment.
  • the above-described embodiment is an exemplification, and the present invention has substantially the same configuration as the technical idea described in the claims of the present invention, and any device that exhibits the same function and effect is the present invention. It is included in the technical scope of the invention.
  • Example 1 As a base material, alkali-free glass (Nippon Electric Glass Co., Ltd. OA-10G, 10 mm x 10 mm, thickness 0.7mm) was prepared. Conductor composition ink (silver nanocolloid (average particle diameter: 40 nm), trifluoromethylbenzenethiol, and ethylene glycol were mixed at a mass ratio of 15: 5: 80 on the surface of the substrate by an ink jet printing method. Printed) and baked at 130 ° C. for 30 minutes to form conductive convex portions having liquid repellency. The conductive convex portion had a diameter of 40 ⁇ m and a height of 480 nm.
  • a commercially available silver nano-ink (Sigma Aldrich 7363503-25G) is printed on the surface of alkali-free glass (Nippon Electric Glass Co., Ltd. OA-10G, 10 mm ⁇ 10 mm, thickness 0.7 mm) by inkjet printing, and baked at 150 ° C. for 30 minutes. By doing so, the electroconductive convex part was formed.
  • the conductive convex portion had a diameter of 50 ⁇ m and a height of 520 nm.
  • An insulating layer made of PMMA was formed on the substrate surface in the same manner as in Example 1. Evaluation by microscopic observation and level difference measurement was performed, but the surface of the conductive convex portion was covered with an insulating layer, and no opening was confirmed.
  • Example 2 A top gate bottom contact type organic thin film transistor was fabricated by the following procedure.
  • the alkali-free glass of Example 1 was prepared as a base material.
  • a metal mask having openings in the pattern of the source electrode and the drain electrode was fixed on the surface of the base material, and a gold thin film was formed by vacuum deposition. When the thickness of the gold thin film was measured in the same manner as in Example 1, it was 100 nm.
  • conductive protrusions having liquid repellency were formed in the same manner as in Example 1 at locations not related to the operation of the transistor.
  • PMMA was applied and dried to form a gate insulating layer having a thickness of 1.0 ⁇ m. It was confirmed from microscopic observation that a contact hole was formed on the surface of the gate insulating layer by the effect of the conductive protrusion having liquid repellency.
  • a metal mask having an opening with a lead line pattern that overlaps the contact hole formed in each of the source electrode and the drain electrode is fixed to the base material, and gold is vapor-deposited by 700 nm by a vacuum evaporation method. And a lead line from the drain electrode was formed on the substrate.
  • a metal mask having an opening of a gate electrode pattern was fixed on the surface of the base material described above, and aluminum was deposited to 200 nm by a vacuum deposition method to produce a top gate bottom contact type organic thin film transistor.
  • Measured transistor characteristics were measured using a semiconductor parameter analyzer (Agilent B1500A) by bringing a measurement probe into contact with the lead wires connected to the source electrode and the drain electrode via the contact holes.
  • the manufactured transistor showed a normal operation in which the current value increased according to the potential difference between the source electrode and the drain electrode, and the gate voltage could control it.

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
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  • Electroluminescent Light Sources (AREA)
PCT/JP2015/068157 2014-06-24 2015-06-24 積層配線部材の製造方法、半導体素子の製造方法、積層配線部材および半導体素子 Ceased WO2015199120A1 (ja)

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WO2010010609A1 (ja) * 2008-07-22 2010-01-28 パイオニア株式会社 コンタクトホールの形成方法、及び回路基板
JP2010257291A (ja) * 2009-04-27 2010-11-11 Seiko Epson Corp タッチパネルの製造方法及び表示装置製造方法並びに電子機器製造方法
JP2011044584A (ja) * 2009-08-21 2011-03-03 Seiko Epson Corp 回路基板の形成方法
JP2012204658A (ja) * 2011-03-25 2012-10-22 Seiko Epson Corp 回路基板の製造方法

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Publication number Priority date Publication date Assignee Title
WO2010010609A1 (ja) * 2008-07-22 2010-01-28 パイオニア株式会社 コンタクトホールの形成方法、及び回路基板
JP2010257291A (ja) * 2009-04-27 2010-11-11 Seiko Epson Corp タッチパネルの製造方法及び表示装置製造方法並びに電子機器製造方法
JP2011044584A (ja) * 2009-08-21 2011-03-03 Seiko Epson Corp 回路基板の形成方法
JP2012204658A (ja) * 2011-03-25 2012-10-22 Seiko Epson Corp 回路基板の製造方法

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