TW201507052A - 半導體檢查用之耐熱性黏著片 - Google Patents
半導體檢查用之耐熱性黏著片 Download PDFInfo
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- TW201507052A TW201507052A TW103120249A TW103120249A TW201507052A TW 201507052 A TW201507052 A TW 201507052A TW 103120249 A TW103120249 A TW 103120249A TW 103120249 A TW103120249 A TW 103120249A TW 201507052 A TW201507052 A TW 201507052A
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- semiconductor
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Classifications
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Abstract
本發明提供一種在加熱時不會輕易發生黏著片變形或黏著劑層軟化的黏著片。本發明的半導體檢查用之耐熱性黏著片,為在加熱半導體晶片的同時進行性能檢查步驟所使用的黏著片,該黏著片為基材之上設有黏著劑層的黏著片,該基材在150℃下加熱30分鐘後的熱收縮率低於1%,且60℃~150℃下的線膨脹係數為5.0×10-5/K以下,且該黏著片的該黏著劑層包含(甲基)丙烯酸酯共聚物、光聚合性化合物、多官能異氰酸酯硬化劑以及光聚合起始劑;對100質量份之該(甲基)丙烯酸酯共聚物,該光聚合性化合物為5~200質量份,該多官能異氰酸酯硬化劑為0.5~20質量份,該光聚合起始劑為0.1~20質量份,且該黏著劑層不包含增黏樹脂。該黏著片的該黏著劑層以包含矽氧烷系接枝共聚物為較佳。
Description
本發明係有關於半導體檢查用之耐熱性黏著片。
半導體晶圓在形成電路之後貼附黏著片,然後進行切割(dicing)成元件小片、清洗、乾燥、黏著片的延展(expanding)、自黏著片之元件小片的剝離(pick up)、安裝(mounting)等各步驟。在此等步驟中所使用的黏著片(dicing tape),理想的是對切割步驟至乾燥步驟為止的被切割為元件小片具有充分的黏著力,並且在拾取步驟中黏著力可減少至黏著劑不會殘留的程度。
黏著片為在對紫外線及/或電子束等的活性光線具有透明度的基材上塗佈藉由紫外線等進行聚合硬化反應的黏著劑層者。此黏著片是採用於切割步驟後以紫外線等照射黏著劑層,使黏著劑層聚合硬化、黏著力降低之後,拾取被切斷之晶片的方法。
作為此種黏著片,專利文獻1以及專利文獻2中揭示了例如在基材面上塗佈由在分子內含有光聚合性不飽和雙鍵的化合物(多官能低聚物)所構成的黏著劑,該黏著劑會藉由活性光線而三維網狀化。
[專利文獻1]日本特開2009-245989號公報 [專利文獻2]日本特開2012-248640號公報
半導體的製造過程中,按以下順序進行加工以及性能檢查。 ・半導體晶圓的切割 ・性能檢查(常溫) ・封裝 ・性能檢查(高溫以及常溫) 前述的過程中,到封裝後的性能測試為止之前,無法判斷出在高溫狀態下是否有異常的晶片。因此,高溫狀態下有異常的所有晶片都必須進行封裝,因而增加封裝成本。
若切割後的性能測試可在高溫下進行,就能降低封裝成本,但是,性能檢查是在半導體晶片貼附於切割膠帶等地黏著片的狀態下進行,因此,一旦對半導體晶片進行加熱,則會導致黏著片變形或黏著片過度緊貼等問題。
黏著片一旦變形,則形成於晶圓上的電極焊點與檢測用探針就無法自動對位,需要較長的檢查時間。此外,當變形嚴重時,可能會導致無法使晶圓接觸檢測用探針。另外,當半導體晶片的間隔較狹窄時,可能會導致晶片互相接觸,造成晶片的破損或強度降低。
另外,一旦黏著片與半導體晶片過度緊貼,則即使照射紫外線等使黏著劑層硬化,黏著劑層的黏著力也不會充分降低,會造成拾取困難、黏著劑殘留等的不良情況。
本發明者群發現加熱所造成的黏著片的變形係起因於基材的熱收縮率以及線膨脹係數,而加熱所造成的黏著劑層的軟化係起因於含有黏著劑的增黏樹脂的軟化。
基於此發現,本發明提供一種使用低熱收縮率及低線膨脹係數的基材之黏著片。
本發明的半導體檢查用之耐熱性黏著片,為在加熱半導體晶片的同時進行性能檢查的步驟中所使用的黏著片,該黏著片為在基材上設有黏著劑層而成,該基材在150℃下加熱30分鐘後的熱收縮率低於1%,且60℃~150℃下的線膨脹係數為5.0×10-5
/K以下,且該黏著片的該黏著劑層包含(甲基)丙烯酸酯共聚物、光聚合性化合物、多官能異氰酸酯硬化劑以及光聚合起始劑;對100質量份之該(甲基)丙烯酸酯共聚物,該光聚合性化合物為5~200質量份,該多官能異氰酸酯硬化劑為0.5~20質量份,該光聚合起始劑為0.1~20質量份,且該黏著劑層不包含增黏樹脂。
該黏著片之黏著劑層以包含矽氧烷系接枝共聚物為佳。
此外,該多官能異氰酸酯硬化劑以具有3個以上之異氰酸酯基為佳。
另外,該光聚合起始劑由23℃開始以10℃/分鐘的昇溫速度昇溫,質量減少率為10%時的溫度為250℃以上為佳。
又,較佳者為前述黏著片使用於半導體的製造方法中,而該半導體的製造方法包括以下步驟:(a)貼附步驟,將黏著片貼附於半導體晶片;(b)吸附步驟,吸附並固定貼附有黏著片之半導體晶片,使其以黏著片接觸載置台的方式承載於60~150℃的載置台上;(c)檢查步驟,一邊將載置台加熱至60~150℃,一邊檢查半導體晶片之性能;(d)紫外線照射步驟,對黏著片照射紫外線;以及(e)拾取步驟,自黏著片拾取半導體晶片。
再者,較佳者為前述黏著片使用於半導體的製造方法中,而該半導體的製造方法包括以下步驟:(a)貼附步驟,將黏著片貼附於半導體晶圓或基板;(b)切割步驟,切割半導體晶圓或基板,使其成為半導體晶片;(c)吸附步驟,吸附並固定貼附有黏著片之半導體晶片,使其以黏著片接觸載置台的方式承載於60~150℃的載置台上;(d)檢查步驟,一邊將載置台加熱至60~150℃,一邊檢查半導體晶片之性能;(e)紫外線照射步驟,對黏著片照射紫外線;以及(f)拾取步驟,自黏著片拾取半導體晶片。
另外,本發明還提供一種電子零件的製造方法,該製造方法包括以60~150℃對貼附有黏著片的電子零件進行加熱的步驟。作為該黏著片,係為在低熱收縮率及低線膨脹係數的基材上層積光硬化型黏著劑層而製成的黏著片,光硬化型黏著劑包含(甲基)丙烯酸酯共聚物、光聚合性化合物、多官能異氰酸酯硬化劑以及光聚合起始劑,且該黏著劑層不包含增黏樹脂。
在此,於「增黏樹脂」中包含為了提高丙烯酸類黏著劑的黏著性之常規配製的樹脂,例如松香系樹脂、萜烯系樹脂、脂肪族石油樹脂、芳香族石油樹脂、氫化石油樹脂、苯並呋喃-茚樹脂、苯乙烯系樹脂、二甲苯樹脂以及該等樹脂的混合物等。
(發明的效果)根據本發明,提供一種在加熱時不會輕易發生黏著片變形或黏著劑層軟化的黏著片,能在加熱半導體晶圓的狀態下進行檢查。傳統之在加熱狀態下的晶圓檢查是在半導體的封裝步驟後進行,但是,根據本發明,在加熱狀態下的晶圓檢查能在封裝步驟前進行。意即,依據本發明,能在封裝步驟前判別加熱狀態下的不良晶片,因此,該不良晶片不會進行封裝,因而可降低封裝成本。
以下,說明本發明之較佳實施形態。此外,以下說明之實施形態係顯示本發明之代表性實施形態之一例者,對本發明之範圍的解釋並不會因此而狹窄。
1.黏著片 (1)基材 (2)光硬化型黏著劑 (2-1)不包含增黏樹脂 (2-2)(甲基)丙烯酸酯共聚物 (2-3)光聚合性化合物 (2-4)多官能異氰酸酯硬化劑 (2-5)光聚合起始劑 2.電子零件之製造方法 (1)貼附步驟 (2)加熱步驟 (3)切割步驟 (4)紫外線照射步驟 (5)拾取步驟
1.黏著片 本發明之黏著片,係為在低熱收縮率及低線膨脹係數的基材上層積光硬化型黏著劑層(以下,亦單純稱之為「黏著劑層」)而成,其特徵在於在黏著劑層中不包含增黏樹脂。本發明之黏著片在被加熱的情況下也不會產生變形。另外,本發明之黏著片不會產生起因於增黏樹脂之軟化的黏著劑層之軟化,故不會過度地黏著於半導體晶圓等。因此,本發明之黏著片,可防止黏著片的變形所造成較長的檢查時間及半導體晶片的破損。並且,可藉由紫外線等照射充分降低黏著劑層之黏著力,且可以防止拾取不良及黏著劑殘留。
(1)基材 作為基材之材料,以150℃加熱30分鐘後的熱收縮率小於1%為佳。熱收縮率一旦大於1%,則可能會產生在加熱時基材收縮導致黏著片變形的情況。在此,熱收縮率為根據下式求出的值。
(L0-L1)/L0×100(%)
L0:加熱前的基材長度(10cm)
L1:以150加熱30分鐘,冷卻至室溫後的基材長度
另外,基材的線膨脹係數為5.0×10-5
/K以下為佳。線膨脹係數一旦大於5.0×10-5
/K,則貼附黏著片的環狀框架與被測物之半導體晶圓和晶片的線膨脹係數的差會變大,而黏著片可能會變形。作為這種基材,可列舉聚萘二甲酸乙二酯(PEN)、聚苯硫醚(PPS)、聚醚醚酮(PEEK)、聚醯胺醯亞胺(PAI)、聚醯亞胺(PI)等的塑料基材、和紙及高質量紙、玻璃紙、皺紋紙等的紙基材。另外,亦可為利用乳膠等對紙基材進行浸漬、填充處理者。
基材可為由前述材料構成之單層或多層之薄膜或者薄片,亦可為層積不同材料構成的薄膜等而形成。基材之厚度為50~200μm,較佳為70~150μm。
對於基材,較佳的是,實施抗靜電處理。作為抗靜電處理,有向基材添加抗靜電劑之處理、向基材表面塗佈抗靜電劑之處理、藉由電暈放電之處理。
作為抗靜電劑,例如可以使用四級胺鹽單體等。作為四級胺鹽單體,例如可以列舉(甲基)丙烯酸二甲胺乙酯四級氯化物、(甲基)丙烯酸二乙胺乙酯四級氯化物、(甲基)丙烯酸甲乙胺乙酯四級氯化物、p-二甲胺苯乙烯四級氯化物以及p-二乙胺苯乙烯四級氯化物。其中,以(甲基)丙烯酸二甲胺乙酯四級氯化物為佳。
(2)光硬化型黏著劑
本發明之黏著片的形成黏著劑層之光硬化型黏著劑,包含(甲基)丙烯酸酯共聚物、光聚合性化合物、多官能異氰酸酯硬化劑與光聚合起始劑,不包含增黏樹脂。
(2-1)不包含增黏樹脂
作為加熱時導致黏著劑層之軟化的增黏樹脂,無特別之限定,然而可列舉松香系樹脂、萜烯系樹脂、脂肪族石油樹脂、芳香族石油樹脂、氫化石油樹脂、苯並呋喃-茚樹脂、苯乙烯系樹脂、二甲苯樹脂以及該等樹脂的混合物。
黏著劑中只要不包含增黏樹脂,亦可以添加剝離增強劑、抗老化劑、填充劑、紫外線吸收劑以及光穩定劑等各種添加劑。在剝離增強劑中,可以使用例如矽氧烷系接枝共聚物(表1之矽氧烷系共聚物)。
此外,在本發明的實施例中並未使用增黏樹脂,僅在比較例中使用增黏樹脂。
(2-2)(甲基)丙烯酸酯共聚物
(甲基)丙烯酸酯共聚物係,僅為(甲基)丙烯酸酯單體之聚合物,或者,(甲基)丙烯酸酯單體與乙烯基化合物單體之共聚物。另外,(甲基)丙烯酸酯係指丙烯酸酯與甲基丙烯酸酯之總稱。包含(甲基)丙烯酸酯等(甲基)的化合物等也同樣,係指在名稱中包含「甲基」之化合物與不包含「甲基」之化合物的總稱。
作為(甲基)丙烯酸酯的單體,可以列舉例如(甲基)丙烯酸丁酯、2-(甲基)丙烯酸丁酯、t-(甲基)丙烯酸丁酯、(甲基)丙烯酸戊酯、(甲基)丙烯酸辛酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸壬酯、(甲基)丙烯酸癸酯、(甲基)丙烯酸月桂酯、(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸異丙酯、(甲基)丙烯酸十三酯、(甲基)丙烯酸十四酯、(甲基)丙烯酸十六酯、(甲基)丙烯酸十八酯、(甲基)丙烯酸環己酯、(甲基)丙烯酸異莰酯、(甲基)丙烯酸雙環戊酯、甲基丙烯酸苄酯、(甲基)丙烯酸甲氧基乙酯、(甲基)丙烯酸乙氧乙酯、(甲基)丙烯酸丁氧甲酯以及乙氧基-n-(甲基)丙烯酸丙酯、(甲基)丙烯酸-2-羥乙酯、(甲基)丙烯酸-2-羥基丙酯、(甲基)丙烯酸-4-羥基丁酯。
作為能夠在(甲基)丙烯酸酯單體上共聚的乙烯基化合物單體,可列舉含官能基單體,其包含1種以上羧基、環氧基、醯胺基、胺基、羥甲基、磺酸基、磺胺酸基或者亞燐酸酯基等官能基群。
作為具有羧基之單體,例如有(甲基)丙烯酸、丁烯酸、馬來酸、無水馬來酸、亞甲基丁二酸、反丁烯二酸、丙烯醯胺基-N-乙醇酸及桂皮酸。
作為具有環氧基之單體,例如有丙烯基丙三基醚以及(甲基)丙烯酸環氧丙基醚。
作為具有醯胺基之單體,例如有(甲基)丙烯醯胺。
作為具有胺基之單體,例如有丙烯酸-N,N-二甲胺乙酯。
作為具有羥甲基之單體,例如有N-羥甲基丙烯醯胺。
(2-3)光聚合性化合物
作為光聚合性化合物,例如可以使用三羥甲基丙烷三丙烯酸酯、新戊四醇四丙烯酸酯、三丙烯酸異戊四醇酯、季戊四醇三丙烯酸酯、二新戊四醇一羥五丙烯酸酯、聚二季戊四醇六丙烯酸酯、1,4-丁二醇雙丙烯酸酯、1,6己二醇雙丙稀酸酯、聚乙二醇二丙烯酸酯、三聚氰酸三乙基丙烯酸酯、市售之低聚酯丙烯酸酯等。
作為光聚合性化合物,除前述丙烯酸酯類化合物,還可以使用聚氨酯丙烯酸酯寡聚物。聚氨酯丙烯酸酯寡聚物係,在使聚酯型態與聚醚型態等聚醇化合物與多價異氰酸化合物反應而得之端異氰酸酯氨基甲酸乙酯預聚物上,反應具有羥基之(甲基)丙烯酸酯而得。
在多價異氰酸化合物中,例如可以使用2,4-甲苯基二異氰酸酯、2,6-甲苯基二異氰酸酯、1,3-二異氰酸二甲苯酯、1,4-二異氰酸二甲苯酯、4,4-二苯基甲烷二異氰酸酯、三甲基六亞甲基二異氰酸酯、六亞甲基二異氰酸酯、二異氰酸異佛爾酮等。又,在具有羥基之(甲基)丙烯酸酯中,例如可以使用(甲基)丙烯酸-2-羥乙酯、(甲基)丙烯酸-2-羥基丙酯、聚乙二醇(甲基)丙烯酸酯、三丙烯酸異戊四醇酯、環氧丙醇二(甲基)丙烯酸酯、二新戊四醇一羥五丙烯酸酯等。
作為光聚合性化合物,較佳的是,具有4個以上的乙烯基之聚氨酯丙烯酸酯寡聚物,其在紫外線等照射後的黏著劑之硬化良好。
光聚合性化合物之混合量,較佳的是,對於(甲基)丙烯酸酯共聚物100質量份,設定為5質量份以上及200質量份以下。如果使光聚合性化合物之混合量減少,則照射紫外線之後的黏著片之剝離性降低,容易產生半導體晶片之拾取不良。另一方面,如果增加光聚合性化合物之混合量,則由於切割時黏著劑之刮起很容易產生拾取不良,且由於反應殘渣產生微小的黏著劑殘留,導致污染。
(2-4)多官能異氰酸酯硬化劑
在多官能異氰酸酯硬化劑中,使用包含2個以上異氰酸酯基者,例如芳香族聚異氰酸酯、脂肪族聚異氰酸酯、脂環族聚異氰酸酯、該等二聚物及三聚物、加成物等。
作為芳香族聚異氰酸酯,例如有1,3-苯二異氰酸酯、4,4'-二苯二異氰酸酯、1,4-苯二異氰酸酯、4,4'-二苯基甲烷二異氰酸酯、2,4-甲苯基二異氰酸酯、2,6-甲苯基二異氰酸酯、4,4'-甲苯胺二異氰酸酯、2,4,6-甲苯基異氰酸酯、1,3,5-甲苯基異氰酸酯苯、联大茴香胺聯異氰酸酯、4,4'-二苯醚二異氰酸酯、4,4',4"-三苯甲烷甲苯基異氰酸酯、ω,ω'-二異氰酸酯-1,3-二甲苯、ω,ω'-二異氰酸酯-1,4-二甲苯、ω,ω'-二異氰酸酯-1,4-二乙苯、1,4-四甲基苯二亞甲基二異氰酸酯以及1,3-四甲基苯二亞甲基二異氰酸酯。
作為脂肪族聚異氰酸酯,例如有伸丙基二異氰酸酯、伸丁基二異氰酸酯、六亞甲基二異氰酸酯、五亞甲基二異氰酸酯、1,2-伸丙基二異氰酸酯、2,3-丁烯二異氰酸酯、1,3-丁烯二異氰酸酯、十二亞甲基二異氰酸酯以及2,4,4-三甲基六亞甲基二異氰酸酯。
作為脂環族聚異氰酸酯,例如有3-異氰酸甲基3,5,5-三甲基環己異氰酸酯、1,3-環戊烷二異氰酸酯、1,3-環己烷二異氰酸酯、1,4-環己烷二異氰酸酯、甲基-2,4-環己烷二異氰酸酯、甲基-2,6-環己烷二異氰酸酯、4,4'-亞甲雙(環己烷異氰酸酯)、1,4-二(環己烷異氰酸酯)環己烷以及1,4-二(異氰酸酯甲基)環己烷。
作為二聚物及三聚物、加成物,例如有二苯基甲烷二異氰酸酯之二聚物、六亞甲基二異氰酸酯之三聚物、三羥甲基丙烷與甲苯基二異氰酸酯的加成物、三羥甲基丙烷與六亞甲基二異氰酸酯的加成物。
前述聚異氰酸酯中,具有3個以上異氰酸酯基為較佳,特別佳的是,六亞甲基二異氰酸酯之三聚物、三羥甲基丙烷與甲苯基二異氰酸酯的加成物、三羥甲基丙烷與六亞甲基二異氰酸酯的加成物。
多官能異氰酸酯硬化劑之混合比,較佳的是,對於(甲基)丙烯酸酯共聚物100質量份,設定為0.5質量份以上及20質量份以下,更佳的是,設定為1.0質量份以上及10質量份以下。如果多官能異氰酸酯硬化劑為0.5質量份以上,則黏著力並不過強,故能夠抑制拾取不良之發生。如果多官能異氰酸酯硬化劑為20質量份以下,則黏著力不會降低,切割時可以維持半導體晶片的保持性。
(2-5)光聚合起始劑
在光聚合起始劑中,可以使用安息香、安息香芳烷醚類、苯乙酮類、蔥肽類、塞噸酮類、縮酮類、二苯基酮類或者氧雜蒽酮類等。
作為安息香,例如有安息香、安息香甲醚、安息香乙醚、安息香二丙醚等。
作為苯乙酮類,例如有安息香芳烷醚類、苯乙酮、2,2-二甲氧基-2-苯乙酮、2,2-二乙氧基-2-苯乙酮、1,1-二氯苯乙酮等。
作為蔥肽類,有2-甲基蒽醌、2-乙基蒽醌、2-叔-丁基蒽醌、1-氯蒽醌等。
作為塞噸酮類,例如有2,4-二甲基塞噸酮、2,4-二異丙基塞噸酮、2-氯塞噸酮、2,4-二異丙基塞噸酮等。
作為縮酮類,例如有苯乙酮二甲基縮酮、苯甲基二甲基縮酮、苯甲基二苯基硫、一硫化四甲基秋蘭姆、偶氮雙異丁腈、二苯基、雙乙醯、β-氯蒽醌等。
光聚合起始劑,自溫度23℃以10℃/分鐘的升溫速度升溫至500℃,質量損失率為10%時之溫度為250℃以上為佳。在後述之加熱步驟中將貼附於晶圓等中的黏著片加熱至60~150℃時,如果光聚合起始劑揮發或劣化,則在後步驟即光照步驟中的黏著劑層之硬化不充分,無法充分降低黏著力,成為導致後續拾取步驟中拾取不良的主要原因。因此,較佳的是,使用具有如上所述之性狀,加熱時很難產生揮發及劣化的光聚合起始劑。
作為前述溫度為250℃以上的光聚合起始劑,可以列舉乙酮,1-[9-乙基-6-(2-甲苯甲醯基)-9H-咔唑-3-基]-,1-(O-乙醯基肟)(BASF JAPAN公司製造、產品名稱IRGACURE OXE02)、2,4,6-三甲基苯甲醯基-二苯基膦氧化物(BASF JAPAN公司製造,產品名稱LUCIRIN TPO)以及2-羥基-1-{4-[4-(2-羥基-2-甲基-丙醯基)-苯甲基]-苯基}-2-甲基-丙烷-1-酮(BASF JAPAN公司製造,產品名稱IRGACURE127)、2-苯基-2-二甲胺基-1-(4-嗎啉基苯基)-丁酮-1(BASF JAPAN公司製造,產品名稱IRGACURE369)、2-二甲胺基-2-(4-甲基-苯甲基)-1-(4-嗎啉-4-基-苯基)-丁烷-1-酮(BASF JAPAN公司製造,產品名稱IRGACURE379)、二(2,4,6-三甲基苯甲醯基)-苯基膦氧化物(BASF JAPAN公司製造,產品名稱IRGACURE819)等。
其中,特別是以前述溫度為270℃以上的乙酮,1-[9-乙基-6-(2-甲苯甲醯基)-9H-咔唑-3-基]-,1-(O-乙醯基肟)(BASF JAPAN公司製造、產品名稱IRGACURE OXE02)、2,4,6-三甲基苯甲醯基-二苯基膦氧化物(BASF JAPAN公司製造,產品名稱LUCIRIN TPO)以及2-羥基-1-{4-[4-(2-羥基-2-甲基-丙醯基)-苯甲基]-苯基}-2-甲基-丙烷-1-酮(BASF JAPAN公司製造,產品名稱IRGACURE127)為佳。
光聚合起始劑之混合量,較佳的是,對於(甲基)丙烯酸酯聚合物100質量份為0.1質量份以上及20質量份以下。若混合量過少,則照射放射線後之黏著片的剝離性降低,容易產生半導體晶片之拾取不良。另一方面,若混合量過多,則光聚合起始劑流向黏著劑表面,導致污染。
在光聚合起始劑中,根據需要亦可以組合1種或者2種先前衆所周知的光聚合促進劑而併用。在光聚合促進劑中,可以使用安息香酸類及第三級胺等。作為第三級胺,可以列舉三乙胺、四亞乙基五胺、二甲胺乙醚等。
黏著劑層之厚度,較佳為3μm以上至100μm,特別是以5μm以上至20μm為佳。若黏著劑層過厚,黏著力會變得過高,拾取性降低。又,若黏著劑層過薄,黏著力會變得過低,切割時的晶片保持性降低,有時會在環狀框架與薄片之間產生剝離。
2.電子零件之製造方法
本發明之電子零件之製造方法,包含將貼附有前述黏著片之電子零件加熱至60~150℃之步驟。下面,依次說明製造方法之具體步驟。
(1)貼附步驟
首先,在貼附步驟中,將黏著片貼附至半導體晶圓(或基板)與環狀框架上。晶圓,可以是矽晶圓以及氮化鎵晶圓、碳化矽晶圓、藍寶石晶圓等先前通用之晶圓。 (2)加熱步驟
在進行形成於晶圓等之電路測試的情形下,貼附步驟之後,對晶圓等,以大約60~150℃加熱大約15分鐘~5小時。此外,加熱步驟還以切割步驟後除去切削水之目的進行,同樣對半導體晶片等,以大約60~150℃加熱大約15分鐘~5小時。
本發明之黏著片,即使在被加熱之情形下,基材的膨脹和收縮都較小,因此,黏著片不會大幅變形。另外,由於不會產生起因於增黏樹脂之軟化的黏著劑層之軟化,故不會過度地黏著於半導體晶圓等。因此,本發明之電子零件的製造方法,可防止黏著片的變形所造成較長的檢查時間及半導體晶片的破損,進而在後述之紫外線照射步驟及拾取步驟中,藉由紫外線等照射可以充分降低黏著劑層之黏著力,且可以防止拾取不良及黏著劑殘留。
(3)切割步驟
在切割步驟中,將矽晶圓等切割之後做成半導體晶片或者半導體零件。做成半導體晶片或者半導體零件之後,進行電路測試時,在切割步驟之後進行前述之加熱步驟。又,切割步驟之後,有時會以除去切削水之目的進行前述加熱步驟。
(4)紫外線照射步驟
在紫外線照射步驟中,自基材側向光硬化型黏著劑層照射紫外線等活性光線。作為紫外線之光源,可以使用低壓水銀燈、高壓水銀燈、超高壓水銀燈、金屬鹵素燈、黑光燈等。
藉由光照射使黏著劑層經三維網狀化而硬化,且使黏著劑層之黏著力降低。此時,如上所述,由於本發明之黏著片即使加熱也不會過度地黏著於晶圓等,故藉由紫外線等之照射可以充分降低黏著力。
(5)拾取步驟
在拾取步驟中,自黏著片的黏著劑層剝離半導體晶片或半導體零件。此時,本發明之黏著片藉由紫外線等的照射,可得到充分降低的黏著力,因此,晶片或零件與黏著劑層之間的剝離變得容易,可得到良好的拾取性,且不會發生黏著劑殘留等之不良情況。作為拾取的方法,可列舉將半導體晶片或零件轉印至其他的黏著片之方法、自黏著片的內側用刮刀剝離之方法、或者是用頂針等往上頂之方法。另外,亦可視需要而在拾取步驟前設置擴展步驟。於擴展步驟中,拉伸黏著片以擴大半導體晶片或半導體零件彼此之間隔,使拾取易於進行。
在拾取步驟之後,經由晶粒附著封膠將拾取之晶片或者零件搭載於引線框架中。搭載後,加熱晶粒附著封膠,加熱黏著晶片或者零件與引線框架。然後,利用樹脂模製搭載於引線框架上的晶片或者零件。
按照「表1」所示之混合調製光硬化型黏著劑。將光硬化型黏著劑塗佈於聚對酞酸乙二酯製的分離器薄膜上,塗佈使乾燥後之黏著層之厚度達到10μm。將該黏著層層積於基材上,以40℃熟化7日,得到黏著片。在基材(K-1)中,使用厚度100μm之帝人杜邦薄膜公司製造的聚萘二甲酸乙二酯(件號:TEONEX Q51)。
此外,以下所示之表1和後述之表2中的(甲基)丙烯酸酯共聚物、光聚合性化合物、多官能異氰酸酯硬化劑、光聚合起始劑、矽氧烷系接枝共聚物以及增黏樹脂的單位皆為質量份。
[基材]
K-1:聚萘二甲酸乙二酯(帝人杜邦薄膜公司製造之TEONEX Q51,厚度:100μm);150℃的熱收縮率為0.1%,60℃~150℃的線膨脹係數為1.3×10-5
/K。
K-2:和紙薄膜(UniqueTape公司製造,厚度:70μm);150℃的熱收縮率為0.2%,60℃~150℃的線膨脹係數為3.0×10-5
/K。
K-3:聚苯硫醚(東麗公司製造之TORELINA3000,厚度:70μm);150℃的熱收縮率為0.1%,60℃~150℃的線膨脹係數為2.6×10-5
/K。
K-4:聚醚醚酮(住友電木公司製造之SUMILITE FS-1100C,厚度:100μm);150℃的熱收縮率為0.4%,60℃~150℃的線膨脹係數為4.7×10-5
/K。
[光硬化型黏著劑]
[(甲基)丙烯酸酯共聚物]
A-1:日本瑞翁(Zeon)公司製造之丙烯酸橡膠AR53L;可藉由丙烯酸乙酯54%、丙烯酸丁酯19%、丙烯酸甲氧基乙酯24%之共聚物、乳化聚合而得。
A-2:綜研化學株式會社製造之SK-Dyne1496;可藉由丙烯酸2-乙基己酯96%、丙烯酸2-羥乙酯4%之共聚物、溶液聚合而得。
[光聚合性化合物]
B-1:根上工業株式會社製造之UN-905;其係在二異氰酸異佛爾酮之三聚物中反應以二新戊四醇五丙烯酸酯為主要成分的丙烯酸酯而獲得者,其乙烯基之數量為15個。
B-2:新中村化學株式會社製造之A-TMPT;三羥甲基丙烷三丙烯酸酯、乙烯基之數量為3個。
[多官能異氰酸酯硬化劑]
C-1:日本聚氨酯工業株式會社製造之CORONATE L-45E;2,4-甲苯基二異氰酸酯之三羥甲基丙烷加成物。
C-2:三亞甲基二異氰酸酯
[光聚合起始劑]
D-1:BASF JAPAN公司製造之IRGACURE127;2-羥基-1-{4-[4-(2-羥基-2-甲基-丙醯基)-苄基]-苯基}-2-甲基-丙烷-1-酮、質量損失率為10%時的溫度為275℃。
D-2:BASF JAPAN公司製造之IRGACURE OXE02;乙酮,1-[9-乙基-6-(2-甲苯甲醯基)-9H-咔唑-3-基]-,1-(O-乙醯基肟)、質量損失率為10%時的溫度為320℃。
D-3:BASF JAPAN公司製造之LUCIRIN TPO;2,4,6-三甲基苯甲醯基-二苯基膦氧化物、質量損失率為10%時的溫度為270℃。
D-4:BASF JAPAN公司製造之IRGACURE651;二苯甲基縮酮、質量損失率為10%時的溫度為185℃。
[矽氧烷系接枝共聚物]
E-1:綜研化學株式會社製造之UTMM-LS2;於聚矽氧分子鏈之末端聚合由具有(甲基)丙烯醯基之聚矽氧類寡聚體類單位以及甲基丙烯酸甲酯等組成之丙烯酸乙烯單位而成之矽氧烷系接枝共聚物。
[增黏樹脂]
F-1:安原化工公司製造之YS POLYSTAR S145;萜烯酚類增黏樹脂、軟化點為145℃。
在實施例1中,由100質量份的前述A-1之(甲基)丙烯酸酯共聚物、50質量份的前述B-1之光聚合性化合物、3質量份的前述C-1之多官能異氰酸酯硬化劑、2質量份的前述D-1之光聚合起始劑、1.5質量份的前述E-1之矽氧烷系接枝共聚物(表1之矽氧烷系共聚物)製成紫外線硬化型黏著劑,以作為黏著片。將所得到的黏著片貼附於形成虛擬電路圖案的直徑8英吋×厚度0.1mm之矽晶圓與環狀框架。將矽晶圓設置於加熱板(載置台)上,並與黏著片的貼附面相反側的面接觸,以120℃加熱1小時之後,進行切割、光照射及拾取之各個步驟。
切割步驟之條件如下所述。
切割裝置:DISCO公司製造之DAD341
切割板:DISCO公司製造之NBC-ZH205O-27HEEE
切割板形狀:外徑55.56mm、齒寬35μm、內徑19.05mm。
切割板轉速:40,000rpm
切割板進料速度:50mm/秒
切割尺寸:10mm角
對黏著片之切削深度:15μm
切削水溫度:25℃
切削水量:1.0升/分鐘
光照射步驟之條件如下所述。
紫外線照射:利用高壓水銀燈之照射量為150mJ/cm2
。
光照射步驟之條件如下所述。
在切割後的晶圓上貼附轉印用黏著片(對矽晶圓之黏著力:6.25N/25mm)之後,剝離轉印用黏著片並轉印晶片。
在加熱步驟中進行以下評價。
(1)黏著片的變形
觀察以120℃加熱1小時之後的黏著片,藉由以下基準進行評價。
◎(優):即使加熱後黏著片也未產生「彎曲」和「皺褶」。
○(良):黏著片由於加熱而產生了輕微的「彎曲」和「皺褶」。
×(不良):黏著片由於加熱而產生了「彎曲」和「皺褶」”。
在切割步驟及拾取步驟中,進行以下評價。
(1)晶片保持性
對於晶片保持性,在切割步驟之後,基於半導體晶片固定於黏著片上之半導體晶片之殘存率,藉由以下基準進行評價。
◎(優):晶片飛散低於5%
○(良):晶片飛散為5%以上且低於10%
×(不良):晶片飛散為10%以上
(2)拾取性
對於拾取性,在拾取步驟中,基於使用轉印用黏著片轉印半導體晶片之轉印成功率(拾取成功率),藉由以下基準進行評價。
◎(優):晶片之拾取成功率為95%以上
○(良):晶片之拾取成功率為80%以上且低於95%
×(不良):晶片之拾取成功率低於80%
將評價結果顯示於「表1」。在實施例1之黏著片中,加熱步驟後的黏著片沒有變形,並且,晶片保持性以及拾取性皆評價為優。
<實施例2~21>
除對基材薄膜之材料、(甲基)丙烯酸酯共聚物以及光聚合性化合物、多官能異氰酸酯硬化劑、光聚合起始劑、矽氧烷系接枝共聚物之種類或者有無添加做出如「表1」所述之變更之外,以與實施例1相同之方法製造黏著片並進行評價。結果如「表1」所示。
<比較例1、2、4~9>
作為基材,使用以下基材,按照表2所示之混合,其他與實施例1相同,製造黏著片,並進行評價。結果如表2所示。
K-5:聚對苯二甲酸乙二酯(東麗公司製造之LUMIRROR S10,厚度:100μm);150℃的熱收縮率為1.1%,60℃~150℃的線膨脹係數為6.5×10-5
/K。
K-6:環烯烴共聚物(郡是公司製造之F薄膜,厚度:100μm);150℃的熱收縮率為0.2%,60℃~150℃的線膨脹係數為6.5×10-5
/K。
<比較例3>
不添加矽氧烷系接枝共聚物,添加增黏樹脂,其他與實施例1相同,製造黏著片,並進行評價。結果如表2所示。
確認了實施例2~21中的黏著片,具有良好之晶片保持性及拾取性。另一方面,比較例1、2中的黏著片在加熱後產生了變形。另外,比較例3中的黏著片之拾取性不良,且黏著劑殘留很明顯。
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Claims (6)
- 一種半導體檢查用之耐熱性黏著片,為在加熱半導體晶片的同時進行性能檢查的步驟中所使用,該黏著片為在基材上設有黏著劑層而成,該基材在150℃下加熱30分鐘後的熱收縮率低於1%,且60℃~150℃下的線膨脹係數為5.0×10-5 /K以下,且該黏著片的該黏著劑層包含(甲基)丙烯酸酯共聚物、光聚合性化合物、多官能異氰酸酯硬化劑以及光聚合起始劑;對100質量份之該(甲基)丙烯酸酯共聚物,該光聚合性化合物為5~200質量份,該多官能異氰酸酯硬化劑為0.5~20質量份,該光聚合起始劑為0.1~20質量份,且該黏著劑層不包含增黏樹脂。
- 如申請專利範圍第1項所述之半導體檢查用之耐熱性黏著片,該黏著劑層包含矽氧烷系接枝共聚物。
- 如申請專利範圍第1項或第2項所述之半導體檢查用之耐熱性黏著片,該多官能異氰酸酯硬化劑具有3個以上之異氰酸酯基。
- 如申請專利範圍第1項至第3項中任一項所述之半導體檢查用之耐熱性黏著片,該光聚合起始劑由23℃開始以10℃/分鐘的昇溫速度昇溫,質量減少率為10%時的溫度為250℃以上。
- 如申請專利範圍第1項至第4項中任一項所述之半導體檢查用之耐熱性黏著片,為在半導體的製造方法中所使用之黏著片,該半導體的製造方法包括以下步驟: (a)貼附步驟,將黏著片貼附於半導體晶片; (b)吸附步驟,吸附並固定貼附有黏著片之半導體晶片,使其以黏著片接觸載置台的方式承載於60~150℃的載置台上; (c)檢查步驟,一邊將載置台加熱至60~150℃,一邊檢查半導體晶片之性能; (d)紫外線照射步驟,對黏著片照射紫外線;以及 (e)拾取步驟,自黏著片拾取半導體晶片。
- 如申請專利範圍第1項至第4項中任一項所述之半導體檢查用之耐熱性黏著片,為在半導體的製造方法中所使用之黏著片,該半導體的製造方法包括以下步驟: (a)貼附步驟,將黏著片貼附於半導體晶圓或基板; (b)切割步驟,切割半導體晶圓或基板,使其成為半導體晶片; (c)吸附步驟,吸附並固定貼附有黏著片之半導體晶片,使其以黏著片接觸載置台的方式承載於60~150℃的載置台上; (d)檢查步驟,一邊將載置台加熱至60~150℃,一邊檢查半導體晶片之性能; (e)紫外線照射步驟,對黏著片照射紫外線;以及 (f)拾取步驟,自黏著片拾取半導體晶片。
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