TW201419997A - Electromagnetic wave shielding film and method of covering electronic component - Google Patents

Electromagnetic wave shielding film and method of covering electronic component Download PDF

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Publication number
TW201419997A
TW201419997A TW102129551A TW102129551A TW201419997A TW 201419997 A TW201419997 A TW 201419997A TW 102129551 A TW102129551 A TW 102129551A TW 102129551 A TW102129551 A TW 102129551A TW 201419997 A TW201419997 A TW 201419997A
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layer
electromagnetic wave
wave shielding
shielding film
thickness
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TW102129551A
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Chinese (zh)
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TWI675617B (en
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Taichi Yatsuzuka
Fumihiro Shiraishi
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Sumitomo Bakelite Co
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00Screening of apparatus or components against electric or magnetic fields
    • H05K9/0007Casings
    • H05K9/002Casings with localised screening
    • H05K9/0022Casings with localised screening of components mounted on printed circuit boards [PCB]
    • H05K9/0024Shield cases mounted on a PCB, e.g. cans or caps or conformal shields
    • H05K9/0031Shield cases mounted on a PCB, e.g. cans or caps or conformal shields combining different shielding materials
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/28Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/06Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B27/08Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/30Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/02Physical, chemical or physicochemical properties
    • B32B7/027Thermal properties
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00Screening of apparatus or components against electric or magnetic fields
    • H05K9/0007Casings
    • H05K9/002Casings with localised screening
    • H05K9/0022Casings with localised screening of components mounted on printed circuit boards [PCB]
    • H05K9/0024Shield cases mounted on a PCB, e.g. cans or caps or conformal shields
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00Screening of apparatus or components against electric or magnetic fields
    • H05K9/0073Shielding materials
    • H05K9/0081Electromagnetic shielding materials, e.g. EMI, RFI shielding
    • H05K9/0088Electromagnetic shielding materials, e.g. EMI, RFI shielding comprising a plurality of shielding layers; combining different shielding material structure
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2250/00Layers arrangement
    • B32B2250/033 layers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00Electrical equipment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19041Component type being a capacitor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19105Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3025Electromagnetic shielding

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Electromagnetism (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
  • Laminated Bodies (AREA)

Abstract

The present invention relates to an electromagnetic wave shielding film for covering a convex portion (electonic component) provided on a substrate. The electromagnetic wave shielding film includes a base material layer and a blocking layer laminated to the base material layer at a side of one surface thereof. The base material layer is composed of a laminated body in which at least two layers are laminated together. According to the present invention, it is possible to enhance possibility of design of the substrate. Further, it is also possible to provide an electromagnetic wave shielding film having a light weight, a thinner thickness, and excellent shape followability with respect to a convex portion with a height of 500 μ m or more. Further, the present invention provides a method of covering an electronic component by using the above electromagnetic wave shielding film.

Description

電磁波遮蔽用膜片及電子零件之被覆方法 Film for electromagnetic wave shielding and coating method for electronic parts

本發明係關於電磁波遮蔽用膜片、及電子零件之被覆方法。 The present invention relates to a diaphragm for electromagnetic wave shielding and a coating method for an electronic component.

以往,如行動電話、醫療設備之易受電磁波影響的電子零件、或半導體元件等發熱性電子零件,及電容器、線圈等各種電子零件、或將該等電子零件安裝於電路基板而得之電子設備,為了減輕電磁波所致雜訊的影響,係於其表面貼附電磁波遮蔽用膜片。 In the past, such as mobile phones, electronic components that are susceptible to electromagnetic waves, and heat-generating electronic components such as semiconductor components, and various electronic components such as capacitors and coils, or electronic devices in which such electronic components are mounted on a circuit board. In order to reduce the influence of noise caused by electromagnetic waves, a diaphragm for shielding electromagnetic waves is attached to the surface thereof.

如此的電磁波遮蔽用膜片,例如已開發出具有由絕緣性材料構成之基材層、及疊層於基材層之其中一或兩面之金屬層的電磁波遮蔽用膜片(例如參照專利文獻1。)。 For the electromagnetic wave shielding film, for example, a substrate for electromagnetic wave shielding having a base material layer made of an insulating material and a metal layer laminated on one or both of the base material layers has been developed (for example, see Patent Document 1). .).

但是如專利文獻1所記載,當電磁波遮蔽用膜片具有金屬層時,會有無法滿足近年來要求持續升高的輕質化.薄型化的問題。 However, as described in Patent Document 1, when the diaphragm for electromagnetic wave shielding has a metal layer, there is a possibility that the weight reduction in recent years is required to be satisfied. The problem of thinning.

【先前技術文獻】 [Previous Technical Literature] 【專利文獻】 [Patent Literature]

【專利文獻1】日本特開2006-156946公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2006-156946

再者,習知技術,除了上述問題,尚有若欲以電磁波遮蔽用膜片來被覆具有帶有凸部之基板的電子零件,此電磁波遮蔽用膜片對於凸部之形狀追隨性不優良的問題。所以,以往係實施對於帶有凸部之基板的電子零件,以鋁或SUS形成之金屬罐遮蔽的遮蔽方法。但是此使用金屬罐遮蔽之遮蔽方法,無法對於基板上之各零件個別實施,而係對於以種類別配置之零件集合體實施。所以,基板上之各零件之配置受限制,因而基板之設計自由度從機能面方面並不一定係最良好。 In addition to the above-described problems, there is a need for an electronic component having a substrate having a convex portion to be coated with a diaphragm for shielding an electromagnetic wave, and the diaphragm for shielding an electromagnetic wave is not excellent in shape followability with respect to the convex portion. problem. Therefore, in the related art, a method of shielding a metal can formed by aluminum or SUS for an electronic component having a substrate with a convex portion has been conventionally performed. However, this method of shielding by metal cans can not be performed individually for each component on the substrate, but is implemented for a component assembly arranged in a variety of types. Therefore, the arrangement of the components on the substrate is limited, and thus the design freedom of the substrate is not necessarily the best from the functional surface.

因此本發明之目的在於提供一種電磁波遮蔽用膜片,其能達成基板之設計自由度提高且輕量化.薄型化,且同時對於帶有凸部之基板之電子零件有良好形狀追隨性。又,本發明之另一目的在於提供使用了該電磁波遮蔽用膜片之電子零件之被覆方法。 Therefore, an object of the present invention is to provide a diaphragm for electromagnetic wave shielding, which can achieve improved design freedom and weight reduction of a substrate. It is thinner and at the same time has good shape followability for electronic parts with bumped substrates. Moreover, another object of the present invention is to provide a coating method for an electronic component using the electromagnetic wave shielding film.

如此的目的可依下列(1)~(17)記載之本發明達成。 Such an object can be achieved by the present invention described in the following (1) to (17).

(1)一種電磁波遮蔽用膜片,係用於被覆基板上之凸部,其特徵為:含有基材層、及疊層於該基材層之一面側之電磁波阻擋層而構成,該基材層,係以至少2層疊層而得之疊層體構成。 (1) A film for electromagnetic wave shielding, which is used for a convex portion on a coated substrate, comprising: a base material layer; and an electromagnetic wave blocking layer laminated on one surface side of the base material layer, the substrate The layer is composed of a laminate obtained by laminating at least two layers.

(2)如(1)之電磁波遮蔽用膜片,其中,該基材層,係第1層、第2層、與第3層從另一面側起以此順序疊層而成為3層構成之疊層體。 (2) The electromagnetic wave shielding film according to (1), wherein the base material layer is formed by laminating the first layer, the second layer, and the third layer in this order from the other surface side. Laminate.

(3)如(2)之電磁波遮蔽用膜片,其中,該第1層於25~150℃之平均線膨脹係數為40~1000[ppm/℃]。 (3) The electromagnetic wave shielding film according to (2), wherein the first layer has an average linear expansion coefficient of from 40 to 1000 [ppm/°C] at 25 to 150 °C.

(4)如(2)或(3)之電磁波遮蔽用膜片,其中,該第1層之厚度T(A)為5μm 以上、100μm以下。 (4) The electromagnetic wave shielding film according to (2) or (3), wherein the thickness T (A) of the first layer is 5 μm Above, 100 μm or less.

(5)如(2)至(4)中任一項之電磁波遮蔽用膜片,其中,該第3層於25~150℃之平均線膨脹係數為40~1000[ppm/℃]。 (5) The electromagnetic wave shielding film according to any one of (2) to (4) wherein the third layer has an average linear expansion coefficient of from 40 to 1000 [ppm/°C] at 25 to 150 °C.

(6)如(2)至(5)中任一項之電磁波遮蔽用膜片,其中,該第3層之厚度T(B)為5μm以上、100μm以下。 (6) The electromagnetic wave shielding film according to any one of (2) to (5), wherein the third layer has a thickness T(B) of 5 μm or more and 100 μm or less.

(7)如(2)至(6)中任一項之電磁波遮蔽用膜片,其中,該第2層於25~150℃之平均線膨脹係數為400以上[ppm/℃]。 (7) The electromagnetic wave shielding film according to any one of (2) to (6) wherein the second layer has an average linear expansion coefficient of from 400 to 150 [ppm/°C] at 25 to 150 °C.

(8)如(第)2至(7)中任一項之電磁波遮蔽用膜片,其中,該第2層之厚度T(C)為10μm以上、100μm以下。 (8) The electromagnetic wave shielding film according to any one of (2), wherein the thickness T (C) of the second layer is 10 μm or more and 100 μm or less.

(9)如(2)至(8)中任一項之電磁波遮蔽用膜片,其中,該第1層之厚度T(A)、該第3層之厚度T(B)、與該第2層之厚度T(C),滿足下列關係式(I):0.05<T(C)/(T(A)+T(B))<10...(I)。 The electromagnetic wave shielding film according to any one of (2) to (8), wherein the thickness T (A) of the first layer, the thickness T (B) of the third layer, and the second The thickness T(C) of the layer satisfies the following relationship (I): 0.05<T(C)/(T(A)+T(B))<10. . . (I).

(10)如(1)至(9)中任一項之電磁波遮蔽用膜片,其中,該電磁波阻擋層,係由反射層與吸收層構成,且係將此等層從該基材層之該其中一面側起以此順序疊層而得之疊層體。 (10) The electromagnetic wave shielding film according to any one of (1) to (9) wherein the electromagnetic wave blocking layer is composed of a reflective layer and an absorbing layer, and the layers are from the substrate layer. One of the sides is a laminate obtained by laminating in this order.

(11)如(1)之電磁波遮蔽用膜片,其中,該基材層係第1層與第2層從另一面側起以此順序疊層而成為2層構成之疊層體。 (11) The electromagnetic wave shielding film according to (1), wherein the base material layer is a laminate in which the first layer and the second layer are laminated in this order from the other surface side to form a two-layer structure.

(12)如(1)之電磁波遮蔽用膜片,其中,該基材層係第2層與第3層從另一面側起以此順序疊層而成為2層構成之疊層體。 (12) The electromagnetic wave shielding film according to (1), wherein the base material layer is a laminate in which the second layer and the third layer are laminated in this order from the other surface side to form a two-layer structure.

(13)如(1)至(12)中任一項之電磁波遮蔽用膜片,其中,將該電磁波遮蔽用膜片以溫度150℃、壓力2MPa、時間5分鐘之條件熱壓接於該基板上之 該凸部時之形狀追隨性為500μm以上、3,000μm以下。 (13) The electromagnetic wave shielding film according to any one of (1) to (12), wherein the electromagnetic wave shielding film is thermocompression bonded to the substrate at a temperature of 150 ° C, a pressure of 2 MPa, and a time of 5 minutes. Shangzhi The shape followability at the time of the convex portion is 500 μm or more and 3,000 μm or less.

(14)如(1)至(13)中任一項之電磁波遮蔽用膜片,更包含疊層於該基材層與該電磁波阻擋層之間的絕緣層。 (14) The electromagnetic wave shielding film according to any one of (1) to (13) further comprising an insulating layer laminated between the base material layer and the electromagnetic wave blocking layer.

(15)如(14)之電磁波遮蔽用膜片,其中,該絕緣層係以具有熱塑性之絕緣樹脂構成。 (15) The electromagnetic wave shielding film according to (14), wherein the insulating layer is made of a thermoplastic resin.

(16)如(14)或(15)之電磁波遮蔽用膜片,其中,該絕緣層之厚度T(D)為3μm以上、50μm以下。 (16) The electromagnetic wave shielding film according to (14) or (15), wherein the insulating layer has a thickness T(D) of 3 μm or more and 50 μm or less.

(17)一種電子零件之被覆方法,其特徵為包含以下步驟:貼附步驟,將如(1)至(16)中任一項之電磁波遮蔽用膜片貼附於該基板上之該凸部,使得該電磁波阻擋層與電子零件黏著;剝離步驟,於該貼附步驟之後,將該基材層從該電磁波阻擋層剝離。 (17) A method of coating an electronic component, comprising the step of attaching a film for electromagnetic wave shielding according to any one of (1) to (16) to the convex portion on the substrate The electromagnetic wave blocking layer is adhered to the electronic component; and the peeling step is performed, after the attaching step, the substrate layer is peeled off from the electromagnetic wave blocking layer.

依照本發明,可藉由以至少2層疊層而得之疊層體來構成電磁波遮蔽用膜片所具備之基材層,而達成以電磁波遮蔽用膜片被覆之基板之設計自由度提高,且輕量化.薄型化。再者,能對於帶有凸部之基板之電子零件發揮良好的形狀追隨性。 According to the present invention, the substrate layer provided in the electromagnetic wave shielding film can be formed by the laminate obtained by laminating at least two layers, and the degree of freedom in designing the substrate covered with the electromagnetic wave shielding film can be improved. Lightweight. Thin. Furthermore, it is possible to exhibit good shape followability with respect to electronic parts of the substrate having the convex portion.

1‧‧‧基材層 1‧‧‧ substrate layer

2‧‧‧絕緣層 2‧‧‧Insulation

3‧‧‧阻擋層 3‧‧‧Block

4‧‧‧電子零件 4‧‧‧Electronic parts

5‧‧‧基板 5‧‧‧Substrate

11‧‧‧第1層 11‧‧‧1st floor

12‧‧‧第3層 12‧‧‧3rd floor

13‧‧‧第2層 13‧‧‧2nd floor

31‧‧‧吸收層 31‧‧‧Absorbent layer

32‧‧‧反射層 32‧‧‧reflective layer

61‧‧‧凸部 61‧‧‧ convex

62‧‧‧凹部 62‧‧‧ recess

100‧‧‧電磁波遮蔽用膜片 100‧‧‧Magnetic wave shielding diaphragm

圖1顯示本發明之電磁波遮蔽用膜片之第1實施形態之縱剖面圖。 Fig. 1 is a longitudinal cross-sectional view showing a first embodiment of the electromagnetic wave shielding film of the present invention.

圖2(a)~(b)顯示使用圖1所示電磁波遮蔽用膜片來說明電子零件之被覆方法之縱剖面圖。 2(a) to 2(b) are longitudinal cross-sectional views showing a method of coating an electronic component using the diaphragm for electromagnetic wave shielding shown in Fig. 1.

圖3顯示本發明之電磁波遮蔽用膜片之第2實施形態之縱剖面圖。 Fig. 3 is a longitudinal cross-sectional view showing a second embodiment of the electromagnetic wave shielding film of the present invention.

圖4顯示本發明之電磁波遮蔽用膜片之第3實施形態之縱剖面圖。 Fig. 4 is a longitudinal sectional view showing a third embodiment of the electromagnetic wave shielding film of the present invention.

圖5顯示本發明之電磁波遮蔽用膜片之第4實施形態之縱剖面圖。 Fig. 5 is a longitudinal cross-sectional view showing a fourth embodiment of the electromagnetic wave shielding film of the present invention.

圖6顯示本發明之電磁波遮蔽用膜片之第5實施形態之縱剖面圖。 Fig. 6 is a longitudinal sectional view showing a fifth embodiment of the electromagnetic wave shielding film of the present invention.

圖7顯示本發明之電磁波遮蔽用膜片之第6實施形態之縱剖面圖。 Fig. 7 is a longitudinal sectional view showing a sixth embodiment of the electromagnetic wave shielding film of the present invention.

圖8(a)~(b)顯示使用圖7所示電磁波遮蔽用膜片來說明電子零件之被覆 方法之縱剖面圖。 8(a) to 8(b) show the coating of the electronic component using the diaphragm for electromagnetic wave shielding shown in Fig. 7. Longitudinal section of the method.

圖9顯示本發明之電磁波遮蔽用膜片之第7實施形態之縱剖面圖。 Fig. 9 is a longitudinal sectional view showing a seventh embodiment of the electromagnetic wave shielding film of the present invention.

圖10顯示本發明之電磁波遮蔽用膜片之第8實施形態之縱剖面圖。 Fig. 10 is a longitudinal sectional view showing an eighth embodiment of the electromagnetic wave shielding film of the present invention.

圖11顯示本發明之電磁波遮蔽用膜片之第9實施形態之縱剖面圖。 Fig. 11 is a longitudinal sectional view showing a ninth embodiment of the electromagnetic wave shielding film of the present invention.

圖12顯示本發明之電磁波遮蔽用膜片之第10實施形態之縱剖面圖。 Fig. 12 is a longitudinal sectional view showing a tenth embodiment of the electromagnetic wave shielding film of the present invention.

圖13顯示本發明之電磁波遮蔽用膜片之第11實施形態之縱剖面圖。 Fig. 13 is a longitudinal sectional view showing an eleventh embodiment of the electromagnetic wave shielding film of the present invention.

圖14顯示本發明之電磁波遮蔽用膜片之第12實施形態之縱剖面圖。 Fig. 14 is a longitudinal sectional view showing a twelfth embodiment of the electromagnetic wave shielding film of the present invention.

以下依據附帶圖式所示之理想實施形態,詳細說明本發明之電磁波遮蔽用膜片、及電子零件之被覆方法。 Hereinafter, a film for electromagnetic wave shielding of the present invention and a method of coating an electronic component will be described in detail based on an ideal embodiment shown in the accompanying drawings.

本發明之電磁波遮蔽用膜片,係為了被覆基板上之凸部而使用之電磁波遮蔽用膜片。此電磁波遮蔽用膜片,係包含基材層、及於該基材層之其中一面側疊層之電磁波阻擋層而構成。前述基材層,係以至少2層疊層而得之疊層體構成。 The electromagnetic wave shielding film of the present invention is a film for electromagnetic wave shielding used for covering a convex portion on a substrate. The electromagnetic wave shielding film is composed of a base material layer and an electromagnetic wave blocking layer laminated on one surface side of the base material layer. The base material layer is formed of a laminate obtained by laminating at least two layers.

又,本發明之電子零件之被覆方法,特徵為包含以下步驟:貼附步驟,將前述電磁波遮蔽用膜片貼附於前述基板上,使得前述電磁波阻擋層與係凸部之電子零件黏著;及剝離步驟,在前述貼附步驟之後,將前述基材層從前述電磁波阻擋層剝離。 Moreover, the method of coating an electronic component according to the present invention includes the step of attaching the electromagnetic wave shielding film to the substrate such that the electromagnetic wave blocking layer and the electronic component of the convex portion are adhered; In the peeling step, the base material layer is peeled off from the electromagnetic wave blocking layer after the attaching step.

若使用如此之電磁波遮蔽用膜片來被覆基板上之凸部,則藉由於前述貼附步驟,邊加熱電磁波遮蔽用膜片,邊進行推壓使得電磁波遮蔽用膜片與基板彼此接近,則基材層、電磁波阻擋層會作為對於凸部有形狀追隨性之基材的作用。由此,能將電磁波阻擋層以追隨於凸部形狀之狀態推入凹部。其結果,能將此設有凸部之基板確實地以電磁波阻擋層被覆。因此,能以此電磁波阻擋層提高設有凸部之基板之電磁波遮蔽性。 When the electromagnetic wave shielding film is used to cover the convex portion on the substrate, the electromagnetic wave shielding film is heated while being pressed by the bonding step, so that the electromagnetic wave shielding film and the substrate are close to each other. The material layer and the electromagnetic wave blocking layer function as a substrate having shape followability to the convex portion. Thereby, the electromagnetic wave blocking layer can be pushed into the concave portion in a state of following the shape of the convex portion. As a result, the substrate provided with the convex portion can be surely covered with the electromagnetic wave blocking layer. Therefore, the electromagnetic wave shielding layer can improve the electromagnetic wave shielding property of the substrate provided with the convex portion.

<電磁波遮蔽用膜片> <Plate for electromagnetic wave shielding>

首先說明本發明之電磁波遮蔽用膜片。 First, the diaphragm for electromagnetic wave shielding of the present invention will be described.

<第1實施形態> <First embodiment>

圖1顯示本發明之電磁波遮蔽用膜片之第1實施形態之縱剖面圖。又,以下說明中,為說明方便,圖1中之上側稱為「上」、下側稱為「下」。 Fig. 1 is a longitudinal cross-sectional view showing a first embodiment of the electromagnetic wave shielding film of the present invention. In the following description, for convenience of explanation, the upper side in FIG. 1 is referred to as "upper" and the lower side is referred to as "lower".

本發明之電磁波遮蔽用膜片,係用於將基板5上之凸部61予以被覆之電磁波遮蔽用膜片。 The electromagnetic wave shielding film of the present invention is a film for electromagnetic wave shielding for covering the convex portion 61 on the substrate 5.

如圖1所示,本實施形態中,電磁波遮蔽用膜片100係包含基材層1、電磁波阻擋層3而構成。電磁波阻擋層3,係於基材層1之底面(其中一面)側與基材層1接觸,並以此順序疊層於基材層1。 As shown in FIG. 1, in the present embodiment, the electromagnetic wave shielding film 100 includes a base material layer 1 and an electromagnetic wave blocking layer 3. The electromagnetic wave blocking layer 3 is placed on the bottom surface (one side) side of the base material layer 1 in contact with the base material layer 1 and laminated on the base material layer 1 in this order.

又,基材層1,係由第1層11、第2層13、第3層12構成。此等係從基材層1之頂面(另一面)側以此順序疊層。 Further, the base material layer 1 is composed of the first layer 11, the second layer 13, and the third layer 12. These are laminated in this order from the top (other side) side of the base material layer 1.

又,以下,針對於基板5上已裝載(載置)電子零件4,並藉由此電子零件4之裝載,使得於基板5上形成凸部61、及凸部61彼此間之凹部62,且此凸部61以電磁波遮蔽用膜片100被覆之情形說明。又,於基板5上裝載之電子零件4,例如:於可撓性電路基板(FPC)上裝載之LCD驅動IC、觸控面板周邊之IC+電容器或電子電路基板(主機板)。 In the following, the electronic component 4 is mounted (mounted) on the substrate 5, and the electronic component 4 is mounted thereon so that the convex portion 61 and the concave portion 62 between the convex portions 61 are formed on the substrate 5, and The case where the convex portion 61 is covered with the electromagnetic wave shielding film 100 will be described. Further, the electronic component 4 mounted on the substrate 5 is, for example, an LCD driver IC mounted on a flexible circuit board (FPC), an IC+ capacitor around the touch panel, or an electronic circuit board (main board).

<基材層1> <Substrate layer 1>

首先針對基材層1說明。 First, the substrate layer 1 will be described.

基材層1之功能為作為:於貼附步驟,藉由將電磁波遮蔽用膜片100之電磁波阻擋層3推入到基板5上之凹部62,使得在將此凸部61被覆時,推入(填埋)電磁波阻擋層3、提高此電磁波阻擋層3對於凸部61之形狀追隨性的基材。又,基材層1,於剝離步驟,係於已在凹部62推入電磁波阻擋 層3之狀態,從電磁波阻擋層3剝離。 The substrate layer 1 functions as a bonding step in which the electromagnetic wave blocking layer 3 of the electromagnetic wave shielding film 100 is pushed into the concave portion 62 on the substrate 5 so that when the convex portion 61 is covered, it is pushed in. (Embedded) Electromagnetic wave blocking layer 3, a substrate for improving the shape followability of the electromagnetic wave blocking layer 3 with respect to the convex portion 61. Further, in the peeling step, the base material layer 1 is attached to the electromagnetic wave barrier that has been pushed in the concave portion 62. The state of the layer 3 is peeled off from the electromagnetic wave blocking layer 3.

本發明中,此基材層1係由至少2層疊層之疊層體構成。 In the present invention, the base material layer 1 is composed of a laminate of at least two laminated layers.

如上,藉由使作為用於提高電磁波阻擋層3對凸部61之形狀追隨性的基材的基材層1以至少2層疊層之疊層體構成,能夠於使用電磁波遮蔽用膜片100將基板5上之凸部61予以被覆時,確實地將電磁波阻擋層3以對應於凸部61之形狀之狀態確實被覆。亦即,可達成電磁波阻擋層3對於凸部61之形狀追隨性之提高。其結果,可將設有此凸部61之基板5以電磁波阻擋層3確實地被覆,故此電磁波阻擋層3所致之對於設有凸部61之基板5之電磁波遮蔽(阻擋)性會提高。 As described above, the base material layer 1 which is a base material for improving the shape followability of the electromagnetic wave blocking layer 3 to the convex portion 61 is formed of a laminate of at least two laminated layers, whereby the electromagnetic wave shielding film 100 can be used. When the convex portion 61 on the substrate 5 is covered, the electromagnetic wave blocking layer 3 is surely covered in a state corresponding to the shape of the convex portion 61. That is, an improvement in the shape followability of the electromagnetic wave blocking layer 3 with respect to the convex portion 61 can be achieved. As a result, the substrate 5 provided with the convex portion 61 can be surely covered by the electromagnetic wave blocking layer 3, so that the electromagnetic wave shielding (blocking) property of the substrate 5 provided with the convex portion 61 due to the electromagnetic wave blocking layer 3 is improved.

又,藉由使基材層1係由至少2層疊層之疊層體構成,即使基板5設置之凸部61之高度是500μm以上,進一步為1.0~3.0mm之大,前述凸部61彼此之分離距離(節距)是200μm以下,進一步為100μm~150μm之小,能仍將電磁波阻擋層3以因應於凸部61之形狀的狀態確實地推入凹部62。 In addition, when the base material layer 1 is composed of a laminate of at least two laminated layers, the height of the convex portion 61 provided in the substrate 5 is 500 μm or more, and further preferably 1.0 to 3.0 mm, and the convex portions 61 are mutually The separation distance (pitch) is 200 μm or less, and further is as small as 100 μm to 150 μm, and the electromagnetic wave blocking layer 3 can be surely pushed into the concave portion 62 in accordance with the shape of the convex portion 61.

本實施形態中,由2層以上之層疊層而得之疊層體構成之基材層1,係以第1層11、第2層13、與第3層12構成。基材層1,係此等由基材層1之頂面(另一面)側依序疊層而成的3層構成的疊層體。為了提高電磁波阻擋層3對於凸部61之形狀追隨性,此等各層11~13之種類、及厚度等可適當組合。 In the present embodiment, the base material layer 1 composed of a laminate obtained by laminating two or more layers is composed of the first layer 11, the second layer 13, and the third layer 12. The base material layer 1 is a three-layer laminate in which the top surface (the other surface) side of the base material layer 1 is laminated in this order. In order to improve the shape followability of the electromagnetic wave blocking layer 3 with respect to the convex portion 61, the types, thicknesses, and the like of the respective layers 11 to 13 can be appropriately combined.

以下針對此等各層11~13分別說明。 The following describes each of these layers 11 to 13 separately.

第1層11,具有以下作用:於貼附步驟,將電磁波阻擋層3使用例如真空加壓式層合機等推入基板5上之凹部62時,將真空加壓式層合機等所具有之推壓部予以釋放(release)的作用。又,第1層11,具有從推壓部對於第2層13側施予推壓力之機能。 The first layer 11 has a function of, in the attaching step, when the electromagnetic wave blocking layer 3 is pushed into the concave portion 62 on the substrate 5 by, for example, a vacuum pressure laminator, the vacuum pressure laminator or the like is provided. The pressing portion acts as a release. Further, the first layer 11 has a function of applying a pressing force to the second layer 13 side from the pressing portion.

作為此第1層(第1離型層)11之構成材料,不特別限定,例如:對排聚 苯乙烯、聚甲基戊烯、聚對苯二甲酸丁二醇酯、聚丙烯、環狀烯烴聚合物、矽酮之類的樹脂材料等。該等之中,宜使用對排聚苯乙烯較佳。如上,藉由使用具有對排結構之聚苯乙烯作為聚苯乙烯,聚苯乙烯會具有結晶性。因而,能使第1層11與裝置間之離型性,及耐熱性及形狀追隨性優良。 The constituent material of the first layer (first release layer) 11 is not particularly limited, and for example, A resin material such as styrene, polymethylpentene, polybutylene terephthalate, polypropylene, a cyclic olefin polymer, or an anthrone. Among these, it is preferred to use a row of polystyrene. As described above, polystyrene has crystallinity by using polystyrene having a aligned structure as polystyrene. Therefore, the release property between the first layer 11 and the device, and the heat resistance and shape followability can be excellent.

第1層11使用前述對排聚苯乙烯時,其含量不特別限制,宜為60重量%以上較佳,70重量%以上、95重量%以下更佳,又更佳為80重量%以上、90重量%以下較佳。對排聚苯乙烯之含量小於前述下限值時,第1層11之離型性有下降之虞。又,對排聚苯乙烯之含量超過前述上限值時,第1層11之形狀追隨性有下降之虞。 When the first layer 11 is used in the above-mentioned row of polystyrene, the content thereof is not particularly limited, but is preferably 60% by weight or more, more preferably 70% by weight or more, 95% by weight or less, still more preferably 80% by weight or more, and 90%. It is preferably 1% by weight or less. When the content of the aligned polystyrene is less than the above lower limit value, the release property of the first layer 11 is lowered. Further, when the content of the aligned polystyrene exceeds the above upper limit value, the shape followability of the first layer 11 is lowered.

又,第1層11,也可僅由對排聚苯乙烯構成。又,第1層11,除了含有前述對排聚苯乙烯,也可更含有苯乙烯系彈性體、聚乙烯或聚丙烯等。 Further, the first layer 11 may be composed only of the aligned polystyrene. Further, the first layer 11 may further contain a styrene-based elastomer, polyethylene or polypropylene, in addition to the above-mentioned aligned polystyrene.

第1層11之厚度T(A)不特別限定,宜為5μm以上、100μm以下較佳,更佳為10μm以上、70μm以下,又更佳為20μm以上、50μm以下。第1層11之厚度小於前述下限值時,第1層11有斷裂且其離型性下降之虞。又,第1層11之厚度超過前述上限值時,基材層1之形狀追隨性有下降,且電磁波阻擋層3之形狀追隨性有下降之虞。 The thickness T (A) of the first layer 11 is not particularly limited, but is preferably 5 μm or more and 100 μm or less, more preferably 10 μm or more and 70 μm or less, and still more preferably 20 μm or more and 50 μm or less. When the thickness of the first layer 11 is less than the above lower limit value, the first layer 11 is broken and the release property is lowered. When the thickness of the first layer 11 exceeds the above upper limit value, the shape followability of the base material layer 1 is lowered, and the shape followability of the electromagnetic wave blocking layer 3 is lowered.

又,第1層11於25~150℃之平均線膨脹係數宜為40~1000[ppm/℃]較理想,80~700[ppm/℃]更理想。藉由將第1層11之平均線膨脹係數設定在此範圍內,於電磁波遮蔽用膜片100加熱時,第1層11具有優良的伸縮性。所以,能更確實提高電磁波阻擋層3對於凸部61之形狀追隨性。 Further, the average linear expansion coefficient of the first layer 11 at 25 to 150 ° C is preferably 40 to 1000 [ppm / ° C], and more preferably 80 to 700 [ppm / ° C]. When the average linear expansion coefficient of the first layer 11 is set within this range, the first layer 11 has excellent stretchability when the electromagnetic wave shielding film 100 is heated. Therefore, the shape followability of the electromagnetic wave blocking layer 3 with respect to the convex portion 61 can be more surely improved.

又,各層之平均線膨脹係數,例如可使用熱機械分析裝置(精工儀器公司製、「TMASS6100」)獲得。具體而言,於25~200℃、49mN之固定負荷之拉伸模式、升溫速度5℃/分之條件測定待測定之各層之貯藏彈性係數。分別讀取此時熱機械分析裝置中於25℃~150℃之平均線膨脹係數。藉此,可求取平均線膨脹係數。 Moreover, the average linear expansion coefficient of each layer can be obtained, for example, using a thermomechanical analyzer ("TMASS6100" manufactured by Seiko Instruments Inc.). Specifically, the storage elastic modulus of each layer to be measured was measured under the conditions of a tensile mode of a fixed load of 25 to 200 ° C and 49 mN and a temperature rising rate of 5 ° C /min. The average linear expansion coefficients at 25 ° C to 150 ° C in the thermomechanical analysis device at this time were respectively read. Thereby, the average linear expansion coefficient can be obtained.

再者,第1層11之表面張力宜為20~40[mN/m]較理想,25~35[mN/m]更理想。具有此範圍內之表面張力之第1層11,具備優良的離型性。又,在使用真空加壓式層合機等進行推入處理後,可從推壓部將第1層11剝離。 Further, the surface tension of the first layer 11 is preferably 20 to 40 [mN/m], and more preferably 25 to 35 [mN/m]. The first layer 11 having the surface tension in this range has excellent release properties. Moreover, after the push-in process is performed using a vacuum pressure type laminator or the like, the first layer 11 can be peeled off from the pressing portion.

第3層12具有以下作用:於貼附步驟,在使用真空加壓式層合機等實施將電磁波阻擋層3推入基板5上之凹部62後,於剝離步驟在將基材層1從電磁波阻擋層3剝離時,對於基材層1賦予剝離性。又,第3層12,同時具有以下作用:具有因應基板5上之凸部61之形狀而追隨之追隨性,且具有從推壓部對於電磁波阻擋層3側賦予推壓力。 The third layer 12 has the following effect: in the attaching step, after the electromagnetic wave blocking layer 3 is pushed into the concave portion 62 on the substrate 5 by using a vacuum pressure laminator or the like, the substrate layer 1 is subjected to electromagnetic waves in the peeling step. When the barrier layer 3 is peeled off, the substrate layer 1 is provided with releasability. Further, the third layer 12 has a function of following the shape of the convex portion 61 on the substrate 5 and providing a pressing force to the electromagnetic wave blocking layer 3 side from the pressing portion.

作為此第3層(第2離型層)12之構成材料,不特別限定,例如:對排聚苯乙烯、聚甲基戊烯、聚對苯二甲酸丁二醇酯、聚丙烯、環狀烯烴聚合物、矽酮之類的樹脂材料。該等之中,宜使用對排聚苯乙烯較佳。如上,藉由使用具有對排結構之聚苯乙烯作為聚苯乙烯,聚苯乙烯會具有結晶性。因而,第3層12與電磁波阻擋層3間之離型性,及耐熱性及形狀追隨性優良。 The constituent material of the third layer (second release layer) 12 is not particularly limited, and examples thereof include: aligned polystyrene, polymethylpentene, polybutylene terephthalate, polypropylene, and ring. A resin material such as an olefin polymer or an anthrone. Among these, it is preferred to use a row of polystyrene. As described above, polystyrene has crystallinity by using polystyrene having a aligned structure as polystyrene. Therefore, the release property between the third layer 12 and the electromagnetic wave blocking layer 3 is excellent in heat resistance and shape followability.

第3層12中,前述對排聚苯乙烯之含量不特別限定,可以僅由對排聚苯乙烯構成,但宜60重量%以上較佳,70重量%以上、95重量%以下更佳,又更佳為80重量%以上、90重量%以下較佳。對排聚苯乙烯之含量低於前述下限值時,第3層12之離型性有下降之虞。又,對排聚苯乙烯之含量超過前述上限值時,第3層12之形狀追隨性有下降之虞。 In the third layer 12, the content of the above-mentioned aligned polystyrene is not particularly limited, and may be composed only of the aligned polystyrene, but is preferably 60% by weight or more, more preferably 70% by weight or more, and 95% by weight or less. More preferably, it is 80% by weight or more and 90% by weight or less. When the content of the aligned polystyrene is less than the above lower limit value, the release property of the third layer 12 is lowered. Further, when the content of the aligned polystyrene exceeds the above upper limit value, the shape followability of the third layer 12 is lowered.

又,第3層12除了含有前述對排聚苯乙烯以外,也可更含有苯乙烯系彈性體、聚乙烯或聚丙烯等。又,構成第3層12、與構成前述第1層11之樹脂,可相同也可不同。 Further, the third layer 12 may further contain a styrene-based elastomer, polyethylene or polypropylene, in addition to the above-mentioned aligned polystyrene. Further, the third layer 12 and the resin constituting the first layer 11 may be the same or different.

第3層12之厚度T(B)不特別限定,宜為5μm以上、100μm以下較佳,10μm以上、70μm以下更佳,又更佳為20μm以上、50μm以下。第3層12之厚度小於前述下限值時,耐熱性下降,基材層於熱壓接步驟的耐熱性下 降,有發生變形且發生電磁波阻擋層變形之虞。又,第3層12之厚度超過前述上限值時,電磁波遮蔽用膜片全體之總厚度有增厚,裁切等作業性下降之虞。又,成本面也不經濟。 The thickness T (B) of the third layer 12 is not particularly limited, but is preferably 5 μm or more and 100 μm or less, more preferably 10 μm or more and 70 μm or less, and still more preferably 20 μm or more and 50 μm or less. When the thickness of the third layer 12 is less than the aforementioned lower limit value, heat resistance is lowered, and the base material layer is heat-resistant under the thermocompression bonding step. Drop, there is deformation and deformation of the electromagnetic wave barrier layer occurs. When the thickness of the third layer 12 exceeds the above upper limit value, the total thickness of the entire electromagnetic wave shielding film is increased, and the workability such as cutting is lowered. Moreover, the cost is not economical.

又,第3層12、與第1層11之厚度可相同也可不同。 Further, the thickness of the third layer 12 and the first layer 11 may be the same or different.

又,第3層12於25~150℃之平均線膨脹係數,宜為40~1000[ppm/℃]較理想,80~700[ppm/℃]更理想。藉由設定第3層12之平均線膨脹係數為此範圍內,電磁波遮蔽用膜片100加熱時,第3層12會具有優良的伸縮性。所以,能使第3層12,進一步使電磁波阻擋層3對於凸部61之形狀追隨性更確實提高。 Further, the average linear expansion coefficient of the third layer 12 at 25 to 150 ° C is preferably 40 to 1000 [ppm / ° C], and more preferably 80 to 700 [ppm / ° C]. When the average linear expansion coefficient of the third layer 12 is set to be within this range, when the electromagnetic wave shielding film 100 is heated, the third layer 12 has excellent stretchability. Therefore, the third layer 12 can further improve the shape followability of the electromagnetic wave blocking layer 3 with respect to the convex portion 61.

再者,第3層12之表面張力宜為20~40[mN/m]較理想,25~35[mN/m]更理想。具有此範圍內之表面張力的第3層12,具備優良的離型性。又,在使用真空加壓式層合機等之推壓處理後,將基材層1從電磁波阻擋層3剝離時,能將基材層1確實地在第3層12與電磁波阻擋層3間之界面剝離。 Further, the surface tension of the third layer 12 is preferably 20 to 40 [mN/m], and more preferably 25 to 35 [mN/m]. The third layer 12 having the surface tension in this range has excellent release properties. Moreover, when the base material layer 1 is peeled off from the electromagnetic wave blocking layer 3 by the pressing process using a vacuum pressure type laminator or the like, the base material layer 1 can be surely between the third layer 12 and the electromagnetic wave blocking layer 3. The interface is peeled off.

第2層13,係於貼附步驟當作將基材層1推入用之基材,在將電磁波阻擋層3推入基板5上之凹部62時,第3層12具有對於凹部62推入(埋入)之緩衝機能。又,第2層13,具有將其推入力賦予第3層12、進一步是介隔此第3層12對於電磁波阻擋層3均勻施加的機能。藉此,能不使電磁波阻擋層3、與凹部62及凸部61之間發生孔隙,而能以優良的密閉性將電磁波阻擋層3對於凹部62推入。 The second layer 13 is used as a substrate for pushing the substrate layer 1 into the substrate, and when the electromagnetic wave blocking layer 3 is pushed into the recess 62 on the substrate 5, the third layer 12 has a push for the recess 62. (buried) buffer function. Further, the second layer 13 has a function of imparting a pushing force to the third layer 12 and further uniformly applying the third layer 12 to the electromagnetic wave blocking layer 3. Thereby, the electromagnetic wave blocking layer 3 can be pushed into the concave portion 62 with excellent sealing properties without causing voids between the electromagnetic wave blocking layer 3 and the concave portion 62 and the convex portion 61.

此第2層(緩衝層)13之構成材料,例如:聚乙烯、聚丙烯等α烯烴系聚合體、將乙烯、丙烯、丁烯、戊烯、己烯、甲基戊烯等作為共聚物成分的α烯烴系共聚物、聚醚碸、聚伸苯基硫醚等工程塑膠系樹脂,此等可以單獨使用或併用多數。該等之中,使用α烯烴系共聚物較佳。具體而言,可列舉乙烯等α烯烴與(甲基)丙烯酸酯之共聚物、乙烯與乙酸乙烯酯之共聚物、乙烯與(甲基)丙烯酸之共聚物(EMMA)、及此等的部分離子交聯物等。α烯 烴系共聚物,形狀追隨性優異且比起第3層12之構成材料,柔軟性較優異。由此,能對於由該構成材料構成之第2層13,確實地賦予用以將第3層12對於凹部62推入(埋入)之緩衝機能。 The constituent material of the second layer (buffer layer) 13 is, for example, an α-olefin polymer such as polyethylene or polypropylene, or a copolymer component of ethylene, propylene, butene, pentene, hexene or methylpentene. The engineering plastic resin such as an α-olefin copolymer, a polyether oxime or a polyphenylene sulfide may be used alone or in combination. Among these, an α-olefin-based copolymer is preferably used. Specific examples thereof include a copolymer of an α-olefin such as ethylene and a (meth)acrylate, a copolymer of ethylene and vinyl acetate, a copolymer of ethylene and (meth)acrylic acid (EMMA), and a partial ion thereof. Cross-linking, etc. Alkenyl The hydrocarbon-based copolymer is excellent in shape followability and is superior in flexibility to the constituent material of the third layer 12. Thereby, the buffer function for pushing (embedding) the third layer 12 into the concave portion 62 can be surely provided to the second layer 13 composed of the constituent material.

第2層13之厚度T(C)不特別限定,宜為10μm以上、100μm以下較佳,20μm以上、80μm以下更佳,又更佳為30μm以上、60μm以下。第2層13之厚度小於前述下限值時,第2層13之形狀追隨性下降,於熱壓接步驟對於凸部61之追隨性有下降之虞。又,第2層13之厚度超過前述上限值時,於熱壓接步驟,樹脂從第2層13之滲出增多,其附著於壓接裝置之熱盤,作業性有下降之虞。 The thickness T (C) of the second layer 13 is not particularly limited, but is preferably 10 μm or more and 100 μm or less, more preferably 20 μm or more and 80 μm or less, and still more preferably 30 μm or more and 60 μm or less. When the thickness of the second layer 13 is less than the lower limit value, the shape followability of the second layer 13 is lowered, and the followability of the convex portion 61 in the thermocompression bonding step is lowered. When the thickness of the second layer 13 exceeds the above upper limit value, the resin is oozing out from the second layer 13 in the thermocompression bonding step, and adheres to the hot plate of the pressure bonding device, and the workability is lowered.

又,第2層13於25~150℃之平均線膨脹係數,宜為400以上[ppm/℃]較理想,800以上[ppm/℃]更理想。藉由設定第2層13之平均線膨脹係數為此範圍內,於電磁波遮蔽用膜片100加熱時,第2層13,相比於第3層12,容易有更優良的伸縮性。所以,能使第2層13、進一步使電磁波阻擋層3對於凸部61之形狀追隨性更確實地提高。 Further, the average linear expansion coefficient of the second layer 13 at 25 to 150 ° C is preferably 400 or more [ppm / ° C], and more preferably 800 or more [ppm / ° C]. When the average linear expansion coefficient of the second layer 13 is set to be within this range, when the electromagnetic wave shielding film 100 is heated, the second layer 13 is more likely to have more excellent stretchability than the third layer 12. Therefore, the second layer 13 can be further improved in the shape followability of the electromagnetic wave blocking layer 3 with respect to the convex portion 61.

又,藉由將各層11~13之平均線膨脹係數分別適當設定為前述範圍內,能輕易設定後述基材層1於150℃之貯藏彈性係數為2.0E+05~5.0E+08Pa之範圍內。 Further, by appropriately setting the average linear expansion coefficients of the respective layers 11 to 13 within the above range, it is possible to easily set the storage elastic modulus of the base material layer 1 described later at 150 ° C to be in the range of 2.0E+05 to 5.0E+08 Pa. .

又,第1層11之厚度T(A)、第3層12之厚度T(B),與第2層13之厚度T(C),例如宜滿足以下關係式較佳,0.05<T(C)/(T(A)+T(B))<10,滿足以下關係式更佳,0.14<T(C)/(T(A)+T(B))<4,更佳為滿足以下關係式0.3<T(C)/(T(A)+T(B))<1.5。 Further, the thickness T (A) of the first layer 11, the thickness T (B) of the third layer 12, and the thickness T (C) of the second layer 13 are preferably, for example, satisfying the following relationship: 0.05 < T (C) ) / (T (A) + T (B)) < 10, which satisfies the following relationship, 0.14 < T (C) / (T (A) + T (B)) < 4, more preferably satisfies the following relationship Formula 0.3 < T (C) / (T (A) + T (B)) < 1.5.

第1層11之厚度T(A)、第3層12之厚度T(B),與第2層13之厚度 T(C),藉由滿足前述關係式,形狀追隨性更提高。 The thickness T (A) of the first layer 11, the thickness T (B) of the third layer 12, and the thickness of the second layer 13 T(C), by satisfying the above relationship, shape followability is further improved.

基材層1之全體之厚度T(F)不特別限定,宜為20μm以上、300μm以下較佳,40μm以上、220μm以下更佳,又更佳為70μm以上、160μm以下。基材層1之全體之厚度小於前述下限值時,第1層11會有斷裂且基材層1之離型性有下降之虞。又,基材層1之全體之厚度超過前述上限值時,基材層1之形狀追隨性下降,且電磁波阻擋層3之形狀追隨性有下降之虞。 The thickness T (F) of the entire base material layer 1 is not particularly limited, but is preferably 20 μm or more and 300 μm or less, more preferably 40 μm or more and 220 μm or less, and still more preferably 70 μm or more and 160 μm or less. When the thickness of the entire base material layer 1 is less than the above lower limit value, the first layer 11 may be broken and the release property of the base material layer 1 may be lowered. When the thickness of the entire base material layer 1 exceeds the above upper limit value, the shape followability of the base material layer 1 is lowered, and the shape followability of the electromagnetic wave blocking layer 3 is lowered.

又,以如上述疊層體構成之基材層1,其於150℃之貯藏彈性係數宜為2.0E+05~5.0E+08Pa較理想,1.0E+06~3.0E+08Pa更佳,3.0E+06~9.0E+07Pa又更佳。 Further, in the substrate layer 1 composed of the above laminate, the storage elastic modulus at 150 ° C is preferably 2.0E+05 to 5.0E+08Pa, more preferably 1.0E+06 to 3.0E+08Pa, 3.0. E+06~9.0E+07Pa is even better.

如上,藉由將作用為用以使電磁波阻擋層3對於凸部61之形狀追隨性提高的基材之基材層1於加熱時之貯藏彈性係數設定在前述範圍內,當使用電磁波遮蔽用膜片100來被覆基板5上之凸部61時,能以電磁波阻擋層3因應於凸部61之形狀之狀態,更確實地推入凹部62。其結果,能以電磁波阻擋層3更確實地被覆此設有凸部61之基板5。所以,可藉由此電磁波阻擋層3,來進一步提高對於設有凸部61之基板5的電磁波遮蔽(阻擋)性。 As described above, by setting the storage elastic modulus of the base material layer 1 serving as the base material for improving the shape followability of the electromagnetic wave blocking layer 3 to the convex portion 61 to be within the above range, the film for electromagnetic wave shielding is used. When the sheet 100 covers the convex portion 61 on the substrate 5, the electromagnetic wave blocking layer 3 can be more reliably pushed into the concave portion 62 in accordance with the shape of the convex portion 61. As a result, the substrate 5 provided with the convex portion 61 can be more reliably covered by the electromagnetic wave blocking layer 3. Therefore, the electromagnetic wave shielding layer 3 can be used to further improve the electromagnetic wave shielding (blocking) property of the substrate 5 on which the convex portion 61 is provided.

又,基材層1於25℃之貯藏彈性係數宜為1.0E+07~1.0E+10Pa較理想,5.0E+08~5.0E+09Pa更理想。如上,藉由將常溫(室溫)時,亦即25℃之貯藏彈性係數設定為前述範圍內,能使基材層1在電磁波遮蔽用膜片100之加熱前為固體狀而不是液狀,且於電磁波遮蔽用膜片100之加熱時成為半固形狀(凝膠狀)。所以,基材層1(電磁波遮蔽用膜片100)貼附於基板5時,能將基材層1貼附於基板5而不發生皺紋等。又,電磁波遮蔽用膜片100裁切為規定尺寸時之作業性也提高。再者,推入在基板5設置之凹部62時,能以基材層1確實地將電磁波阻擋層3推入凹部62內。又,於具有此貯藏彈性係數之特性之基材層1中宜至少第1層11及第3層12係以熱塑性樹脂構成,且於貼附步驟之電磁波遮蔽用膜片100之加熱後,宜維持其於25℃之貯藏彈性係數為前述範圍內較佳。藉此,能於剝離步驟從電磁 波阻擋層3將基材層1輕易地剝離。 Further, the storage elastic modulus of the substrate layer 1 at 25 ° C is preferably 1.0E+07 to 1.0E+10Pa, and more preferably 5.0E+08 to 5.0E+09Pa. As described above, by setting the storage elastic modulus at room temperature (at room temperature), that is, at 25 ° C, within the above range, the base material layer 1 can be solid rather than liquid before heating the electromagnetic wave shielding film 100. Further, when the electromagnetic wave shielding film 100 is heated, it is semi-solid (gel-like). Therefore, when the base material layer 1 (the electromagnetic wave shielding film 100) is attached to the substrate 5, the base material layer 1 can be attached to the substrate 5 without wrinkles or the like. Moreover, the workability when the electromagnetic wave shielding film 100 is cut into a predetermined size is also improved. Further, when the concave portion 62 provided in the substrate 5 is pushed in, the electromagnetic wave blocking layer 3 can be surely pushed into the concave portion 62 by the base material layer 1. Further, in the base material layer 1 having the characteristics of the storage elastic modulus, at least the first layer 11 and the third layer 12 are preferably made of a thermoplastic resin, and after heating the electromagnetic wave shielding film 100 in the attaching step, It is preferred to maintain the storage modulus at 25 ° C within the above range. Thereby, the peeling step can be performed from the electromagnetic The wave blocking layer 3 easily peels off the substrate layer 1.

再者,當令基材層1於120℃之貯藏彈性係數為A[Pa],基材層1於150℃之貯藏彈性係數為B[Pa]時,宜滿足0.02≦A/B≦1.00之關係較理想,滿足0.02≦A/B≦0.50之關係更理想。滿足此關係之基材層1,在其加熱時,可說係由於加熱時之溫度變化所致基材層1之貯藏彈性係數之變化幅度小者。因此即使加熱時之溫度條件改變,由於此溫度變化所致之基材層1之貯藏彈性係數變化之幅度仍可在必要最小限度內。所以,能以此基材層1更確實地將電磁波阻擋層3推入凹部62內。 Furthermore, when the storage elastic modulus of the substrate layer 1 at 120 ° C is A [Pa], and the storage elastic modulus of the substrate layer 1 at 150 ° C is B [Pa], the relationship of 0.02 ≦ A / B ≦ 1.00 should be satisfied. Ideally, it is more desirable to satisfy the relationship of 0.02 ≦A/B ≦ 0.50. When the base material layer 1 satisfying this relationship is heated, it can be said that the change in the storage elastic modulus of the base material layer 1 due to the temperature change during heating is small. Therefore, even if the temperature condition at the time of heating changes, the magnitude of the change in the storage modulus of the substrate layer 1 due to this temperature change can be within the necessary minimum. Therefore, the electromagnetic wave blocking layer 3 can be more reliably pushed into the concave portion 62 by the base material layer 1.

又,各層於25℃、120℃及150℃之貯藏彈性係數,可使用例如:動態黏彈性測定裝置(精工儀器公司製、「DMS6100」)獲得。具體而言,於25~200℃、49mN之固定負荷之拉伸模式、升溫速度5℃/分、頻率1Hz之條件來測定待測定之各層之貯藏彈性係數。分別讀取動態黏彈性測定裝置中,於25℃、120℃及150℃之貯藏彈性係數。藉此可求取貯藏彈性係數。 Further, the storage elastic modulus of each layer at 25 ° C, 120 ° C, and 150 ° C can be obtained by, for example, a dynamic viscoelasticity measuring apparatus ("MSC100" manufactured by Seiko Instruments Inc.). Specifically, the storage elastic modulus of each layer to be measured was measured under the conditions of a tensile mode of a fixed load of 25 to 200 ° C and 49 mN, a temperature increase rate of 5 ° C / min, and a frequency of 1 Hz. The storage elastic coefficients at 25 ° C, 120 ° C and 150 ° C were read in the dynamic viscoelasticity measuring device, respectively. Thereby, the storage elastic coefficient can be obtained.

<阻擋層3> <Block layer 3>

其次針對電磁波阻擋層(阻擋層)3說明。 Next, it is explained for the electromagnetic wave blocking layer (barrier layer) 3.

電磁波阻擋層3,具有以下作用:阻擋(遮蔽)由設於基板5上之電子零件4(凸部61)、及位於介隔此電磁波阻擋層3而與基板5(電子零件4)為相反側之其他電子零件等中至少一方產生之電磁波。 The electromagnetic wave blocking layer 3 has a function of blocking (shading) the electronic component 4 (the convex portion 61) provided on the substrate 5, and being located on the opposite side of the substrate 5 (electronic component 4) from the electromagnetic wave blocking layer 3 Electromagnetic waves generated by at least one of the other electronic components and the like.

此電磁波阻擋層3不特別限定、可以任意形態將電磁波予以阻擋者,例如藉由反射對於電磁波阻擋層3入射之電磁波以阻擋(遮蔽)之反射層、及藉由吸收對於電磁波阻擋層3入射之電磁波以阻擋(遮蔽)之吸收層。 The electromagnetic wave blocking layer 3 is not particularly limited, and may block electromagnetic waves in an arbitrary form, for example, by reflecting a reflective layer that blocks electromagnetic waves incident on the electromagnetic wave blocking layer 3, and by incident on the electromagnetic wave blocking layer 3 by absorption. An electromagnetic wave blocks to block (shadow) the absorption layer.

以下針對反射層及吸收層分別說明。 Hereinafter, the reflective layer and the absorbing layer will be separately described.

反射層,如上述,係藉由將入射於反射層之電磁波予以反射而阻擋者。 The reflective layer, as described above, is blocked by reflecting electromagnetic waves incident on the reflective layer.

此反射層,例如:導電性黏著劑層、金屬薄膜層、已施有金屬網、ITO等導電性材料之表面處理之層等。此等可單獨或併用。該等之中,宜使用導電性黏著劑層較佳。導電性黏著劑層,即使其膜厚(厚度)設為較薄仍能發揮優良的電磁波遮蔽性,故適於作為反射層。 The reflective layer is, for example, a conductive adhesive layer, a metal thin film layer, a surface treated layer of a conductive material such as a metal mesh or ITO, or the like. These can be used alone or in combination. Among these, it is preferred to use a conductive adhesive layer. The conductive adhesive layer is suitable as a reflective layer even if it has a thin film thickness (thickness) and exhibits excellent electromagnetic shielding properties.

作為前述導電性黏著劑層,係含有金屬粉與黏結劑樹脂而構成。金屬粉,例如:金、銀、銅或銀塗覆銅、鎳等。該等之中,從電磁波遮蔽性優異之理由,宜使用銀較佳。 The conductive adhesive layer is composed of a metal powder and a binder resin. Metal powders such as gold, silver, copper or silver coated with copper, nickel, and the like. Among these, silver is preferably used for the reason that the electromagnetic wave shielding property is excellent.

前述導電性黏著劑層中,金屬粉與黏結劑樹脂之含有比例不特別限制,以重量比計,為40:60~90:10較佳,50:50~80:20更佳,又更佳為55:45~70:30。當金屬粉與黏結劑樹脂之含有比例低於前述下限值時,有導電性展現變得困難之虞。又,若金屬粉與黏結劑樹脂之含有比例超過前述上限值時,有可撓性或與電子設備零件間之密合性下降之虞。 In the conductive adhesive layer, the content ratio of the metal powder to the binder resin is not particularly limited, and is preferably 40:60 to 90:10 by weight, more preferably 50:50 to 80:20, and more preferably. It is 55:45~70:30. When the content ratio of the metal powder to the binder resin is lower than the above lower limit value, it becomes difficult to exhibit conductivity. Further, when the content ratio of the metal powder to the binder resin exceeds the above upper limit value, flexibility or adhesion to electronic equipment components may be lowered.

前述導電性黏著劑層,除了含有前述金屬粉與黏結劑樹脂,也可更含有阻燃劑、塗平劑、黏度調整劑等。 The conductive adhesive layer may further contain a flame retardant, a leveling agent, a viscosity adjuster, etc., in addition to the metal powder and the binder resin.

反射層之厚度T(E1)不特別限定,為5μm以上、100μm以下較佳,8μm以上、50μm以下更佳,又更佳為10μm以上、30μm以下。反射層之厚度小於前述下限值時,取決於反射層之構成材料等,耐折疊性下降,裝載零件有於端部斷裂之虞。反射層之厚度超過前述上限值時,取決於反射層之構成材料等,形狀追隨性有下降之虞。又,若反射層之厚度T(E1)設定為該範圍內,能發揮優良的電磁波遮蔽性。所以,能達成反射層之厚度T(E1)之薄膜化,甚至能達成裝載著以電磁波阻擋層(反射層)3被覆之電子零件4的基板5的輕量化。 The thickness T (E1) of the reflective layer is not particularly limited, and is preferably 5 μm or more and 100 μm or less, more preferably 8 μm or more and 50 μm or less, and still more preferably 10 μm or more and 30 μm or less. When the thickness of the reflective layer is less than the above lower limit value, the folding resistance is lowered depending on the constituent material of the reflective layer, and the loaded component has a flaw in the end portion. When the thickness of the reflective layer exceeds the above upper limit value, the shape followability may be lowered depending on the constituent material of the reflective layer or the like. In addition, when the thickness T (E1) of the reflective layer is set within this range, excellent electromagnetic wave shielding properties can be exhibited. Therefore, the thickness of the reflective layer T (E1) can be reduced, and the weight of the substrate 5 on which the electronic component 4 covered with the electromagnetic wave blocking layer (reflecting layer) 3 is loaded can be achieved.

吸收層,如上述,係吸收已入射於吸收層之電磁波,並將電磁能變換為熱能以阻擋電磁波者。 The absorbing layer, as described above, absorbs electromagnetic waves that have been incident on the absorbing layer and converts electromagnetic energy into thermal energy to block electromagnetic waves.

此吸收層,例如:主材料為金屬粉及導電性高分子材料等導電吸收材料所構成之導電吸收層、主材料為碳系材料及導電性高分子材料等介電吸收材料所構成之介電吸收層、主材料為軟磁性金屬等磁性吸收材料所構成之磁性吸收層等,此等可單獨或併用。 The absorbing layer is, for example, a dielectric absorbing material composed of a conductive absorbing material such as a metal powder or a conductive polymer material, and a dielectric material composed of a dielectric material such as a carbon material or a conductive polymer material. The absorbing layer and the main material are magnetic absorbing layers composed of magnetic absorbing materials such as soft magnetic metals, and the like, which may be used singly or in combination.

又,導電吸收層,在施加電場時藉由流動於材料內部之電流將電磁能變換為熱能以吸收電磁波。介電吸收層,係利用介電損失將電磁波之能量變換為熱能以吸收電磁波。磁性吸收層,係利用過電流損失、滯後損失(hysteresis loss)、磁共振等磁性損失,將電波之能量變換為熱而予以消耗,以吸收電磁波。 Further, the conductive absorbing layer converts electromagnetic energy into heat energy to absorb electromagnetic waves by a current flowing inside the material when an electric field is applied. The dielectric absorbing layer converts the energy of electromagnetic waves into thermal energy by dielectric loss to absorb electromagnetic waves. The magnetic absorbing layer absorbs electromagnetic waves by converting the energy of the electric wave into heat by utilizing magnetic loss such as overcurrent loss, hysteresis loss, and magnetic resonance.

該等之中,宜使用介電吸收層、導電吸收層較佳。 Among these, it is preferred to use a dielectric absorbing layer or a conductive absorbing layer.

介電吸收層及導電吸收層,其膜厚(厚度)即使設為較薄,仍能發揮特別優異之電磁波遮蔽性。所以,宜作為吸收層。又,此層中所含之材料之粒徑可小或其添加量可少,所以其膜厚較容易設定為薄,也能輕量化。 The dielectric absorbing layer and the conductive absorbing layer can exhibit particularly excellent electromagnetic wave shielding properties even if they are thin. Therefore, it should be used as an absorption layer. Further, since the particle diameter of the material contained in the layer can be small or the amount of addition thereof can be small, the film thickness can be easily set to be thin, and the weight can be reduced.

又,導電吸收材料,例如:導電性高分子、ATO等金屬氧化物、導電性陶瓷。 Further, the conductive absorbing material is, for example, a conductive polymer, a metal oxide such as ATO, or a conductive ceramic.

又,導電性高分子,例如:聚乙炔、聚吡咯、PEDOT(poly-ethylenedioxythiophene)、PEDOT/PSS、聚噻吩、聚苯胺、聚(對伸苯)、聚茀、聚咔唑、聚矽烷或該等之衍生物等,可使用該等中之1種或組合使用2種以上。 Further, the conductive polymer is, for example, polyacetylene, polypyrrole, PEDOT (poly-ethylenedioxythiophene), PEDOT/PSS, polythiophene, polyaniline, poly(p-phenylene), polyfluorene, polycarbazole, polydecane or the like. One or more of these may be used, or two or more types may be used in combination.

作為介電吸收材料,可列舉碳系材料、導電性高分子等。 Examples of the dielectric absorbing material include a carbon-based material and a conductive polymer.

又,碳系材料,例如:單層奈米碳管、多層奈米碳管之類的奈米碳管、奈米碳纖維、CN奈米管、CN奈米纖維、BCN奈米管、BCN奈米纖維、石墨烯、碳微線圈、碳奈米線圈、碳奈米角(carbon nanohorn)、碳奈米毛線(carbon nanowool)之類的碳等,可使用該等中之1種或組合使用2種以上。 Further, carbon-based materials such as single-layer carbon nanotubes, carbon nanotubes such as multi-layered carbon nanotubes, nano carbon fibers, CN nanotubes, CN nanofibers, BCN nanotubes, BCN nanometers For carbon, graphene, carbon microcoil, carbon nanocoil, carbon nanohorn, carbon nanowool, etc., one of these may be used or two of them may be used in combination. the above.

再者,磁性吸收材料,例如:鐵、矽鋼、磁性不銹鋼(Fe-Cr-Al-Si合金)、鐵矽鋁磁合金(Sendust)(Fe-Si-Al合金)、坡莫合金(permalloy)(Fe-Ni合金)、矽銅(Fe-Cu-Si合金)、Fe-Si合金、Fe-Si-B(-Cu-Nb)合金之類之軟磁性金屬、肥粒鐵(ferrite)等。 Further, magnetic absorbing materials such as iron, niobium steel, magnetic stainless steel (Fe-Cr-Al-Si alloy), stellite aluminum alloy (Fe-Si-Al alloy), permalloy (permalloy) Fe-Ni alloy), beryllium copper (Fe-Cu-Si alloy), Fe-Si alloy, soft magnetic metal such as Fe-Si-B (-Cu-Nb) alloy, ferrite or the like.

吸收層之厚度T(E2)不特別限定,為1μm以上、100μm以下較佳,2μm以上、80μm以下更佳,又更佳為3μm以上、50μm以下。吸收層之厚度小於前述下限值時,取決於吸收層之構成材料等,基板裝載零件有於端部斷裂之虞。又,吸收層之厚度超過前述上限值時,取決於吸收層之構成材料等,形狀追隨性有下降之虞。又,若設定吸收層之厚度T(E2)為此範圍內,能發揮優良的電磁波遮蔽性。所以,可達成吸收層之厚度T(E2)之薄膜化,甚至達到裝載了以電磁波阻擋層(吸收層)3被覆之電子零件4的基板5的輕量化。 The thickness T (E2) of the absorbing layer is not particularly limited, and is preferably 1 μm or more and 100 μm or less, more preferably 2 μm or more and 80 μm or less, and still more preferably 3 μm or more and 50 μm or less. When the thickness of the absorbing layer is less than the aforementioned lower limit value, depending on the constituent material of the absorbing layer or the like, the substrate-loaded component has a flaw in the end portion. Further, when the thickness of the absorbing layer exceeds the above upper limit value, the shape followability may be lowered depending on the constituent material of the absorbing layer or the like. Further, when the thickness T (E2) of the absorbing layer is set to be within this range, excellent electromagnetic wave shielding properties can be exhibited. Therefore, the thickness T (E2) of the absorption layer can be reduced, and the weight of the substrate 5 on which the electronic component 4 covered with the electromagnetic wave barrier layer (absorption layer) 3 is loaded can be reduced.

如以上之電磁波阻擋層3,阻擋(遮蔽)電磁波之電磁波遮蔽性為5dB以上較理想,30dB以上更佳,50dB以上又更佳。具有如此之電磁波遮蔽性之電磁波阻擋層3,具有優良的電磁波遮蔽性,能更確實地阻擋電磁波。 As the above electromagnetic wave blocking layer 3, the electromagnetic wave shielding property of blocking (shielding) electromagnetic waves is preferably 5 dB or more, more preferably 30 dB or more, and more preferably 50 dB or more. The electromagnetic wave blocking layer 3 having such electromagnetic wave shielding properties has excellent electromagnetic wave shielding properties and can more reliably block electromagnetic waves.

又,電磁波阻擋層3,其於150℃之貯藏彈性係數宜為1.0E+05~1.0E+09Pa較理想,5.0E+05~5.0E+08Pa更理想。藉由設定前述貯藏彈性係數為此範圍內,於貼附步驟,電磁波遮蔽用膜片100加熱後,利用來自基材層1之推壓力將電磁波阻擋層3推入基板5上之凹部62以被覆此凸部61時,可因應來自前述基材層1之推壓力,使電磁波阻擋層3因應凸部61之形狀而變形。亦即,能提高電磁波阻擋層3對於凸部61之形狀追隨性。 Further, the electromagnetic wave blocking layer 3 preferably has a storage elastic modulus at 150 ° C of 1.0E+05 to 1.0E+09Pa, and more preferably 5.0E+05 to 5.0E+08Pa. In the range in which the storage elastic modulus is set, in the attaching step, after the electromagnetic wave shielding film 100 is heated, the electromagnetic wave blocking layer 3 is pushed into the concave portion 62 on the substrate 5 by the pressing force from the substrate layer 1 to be covered. In the case of the convex portion 61, the electromagnetic wave blocking layer 3 can be deformed in accordance with the shape of the convex portion 61 in response to the pressing force from the base material layer 1. That is, the shape followability of the electromagnetic wave blocking layer 3 with respect to the convex portion 61 can be improved.

又,如前述,電磁波阻擋層3可為反射層與吸收層中任一者,但此等具有大約相同之電磁波遮蔽性時,為吸收層較佳。吸收層,係藉由吸收已對吸收層入射之電磁波,並將電磁波能量變換為熱能以將電磁波阻擋。因此,由於此吸收使電磁波消滅,可確實地防止如反射層般反射的電磁波對於未被電磁波阻擋層3被覆之其他構件等造成誤作動等不利影響。 Further, as described above, the electromagnetic wave blocking layer 3 may be either a reflective layer or an absorbing layer, but when it has approximately the same electromagnetic shielding properties, it is preferably an absorbing layer. The absorbing layer blocks electromagnetic waves by absorbing electromagnetic waves that have been incident on the absorbing layer and converting the electromagnetic wave energy into thermal energy. Therefore, since the absorption suppresses the electromagnetic wave, it is possible to surely prevent the electromagnetic wave reflected as the reflective layer from adversely affecting the malfunction of other members or the like which are not covered by the electromagnetic wave blocking layer 3.

將如以上構成之電磁波遮蔽用膜片100,以溫度150℃、壓力2MPa、時間5分鐘之條件熱壓接於在基板5上裝載電子零件4以形成之凹部62、凸部61時,電磁波遮蔽用膜片100之形狀追隨性宜為500μm以上較佳,800μm以上更佳,又更佳為1000μm以上。亦即,宜能將凸部61之頂面與凹部62之底面的差距,亦即,將高度500μm以上之凸部61用電磁波遮蔽用膜片100被覆較理想,能將高度800μm以上之凸部61被覆更佳,能將高度1000μm以上之凸部61被覆又更佳。如此,能被覆高度高之凸部61(高低差大)之電磁波遮蔽用膜片100,具有優良的形狀追隨性。又,可利用電磁波阻擋層3,以相對於凹部62為優良的填埋率來被覆凸部61。 The electromagnetic wave shielding film 100 having the above configuration is thermally bonded to the concave portion 62 and the convex portion 61 formed by mounting the electronic component 4 on the substrate 5 under the conditions of a temperature of 150 ° C, a pressure of 2 MPa, and a time of 5 minutes. The shape followability of the film 100 is preferably 500 μm or more, more preferably 800 μm or more, and still more preferably 1000 μm or more. In other words, it is preferable that the difference between the top surface of the convex portion 61 and the bottom surface of the concave portion 62, that is, the convex portion 61 having a height of 500 μm or more is coated with the electromagnetic wave shielding film 100, and the convex portion having a height of 800 μm or more can be used. The coating of 61 is better, and it is better to cover the convex portion 61 having a height of 1000 μm or more. In this manner, the electromagnetic wave shielding film 100 capable of covering the convex portion 61 having a high height (large difference) has excellent shape followability. Moreover, the electromagnetic wave blocking layer 3 can be used to cover the convex portion 61 with an excellent filling rate with respect to the concave portion 62.

又,前述形狀追隨性可如以下方式求得。 Further, the shape followability can be obtained as follows.

亦即,首先,在縱100mm×橫100mm×高度2mm之印刷電路板(主機板),以0.2mm間隔,以棋盤格狀形成寬0.2mm、既定高低差之溝,以獲得印刷電路基板。之後,使用真空加壓式層合機將電磁波遮蔽用膜片以150℃×2MPa×5分鐘之條件壓接於印刷電路板,並貼附在印刷電路板。貼附後,從電磁波遮蔽用膜片將基材層剝離。然後,判斷已貼附於印刷電路板之阻擋層與印刷電路板上之溝之間是否有空隙。又,是否有空隙,係以顯微鏡(microscope)或顯微鏡觀察並評價。 That is, first, a printed circuit board (main board) having a length of 100 mm × a width of 100 mm × a height of 2 mm was formed in a checkerboard shape at a spacing of 0.2 mm to form a groove having a width of 0.2 mm and a predetermined height difference to obtain a printed circuit board. Thereafter, the electromagnetic wave shielding film was pressure-bonded to the printed circuit board at 150 ° C × 2 MPa × 5 minutes using a vacuum pressure laminator, and attached to the printed circuit board. After the attachment, the base material layer is peeled off from the electromagnetic wave shielding film. Then, it is judged whether there is a gap between the barrier layer attached to the printed circuit board and the groove on the printed circuit board. Further, whether or not there is a void is observed and evaluated by a microscope or a microscope.

<電子零件之被覆方法> <Method of covering electronic parts>

其次針對本發明之電子零件之被覆方法說明。 Next, a description will be given of a coating method of the electronic component of the present invention.

本發明之電子零件之被覆方法,特徵為包含以下步驟:貼附步驟,於前述基板上,貼附前述電磁波遮蔽用膜片,使得前述電磁波阻擋層與電子零件黏著;及剝離步驟,在前述貼附步驟之後,將前述基材層從前述電磁波阻擋層剝離。 The method for coating an electronic component according to the present invention includes the step of attaching the electromagnetic wave shielding film to the substrate so that the electromagnetic wave blocking layer adheres to the electronic component, and the peeling step, in the attaching After the attaching step, the aforementioned substrate layer is peeled off from the electromagnetic wave blocking layer.

圖2係說明使用圖1所示之電磁波遮蔽用膜片之電子零件之被覆方法之縱剖面圖。 Fig. 2 is a longitudinal cross-sectional view showing a method of coating an electronic component using the diaphragm for electromagnetic wave shielding shown in Fig. 1.

以下針對電子零件之被覆方法之各步驟依序說明。 The following steps for the method of covering the electronic component are described in order.

(貼附步驟) (attachment step)

前述貼附步驟,例如:圖2(a)所示,係將電磁波遮蔽用膜片100貼附於基板5,使得被覆設於基板5上之凸部61之步驟。 The attaching step is a step of attaching the electromagnetic wave shielding film 100 to the substrate 5 so as to be applied to the convex portion 61 on the substrate 5, as shown in Fig. 2(a).

貼附方法不特別限定,例如:真空壓空成形法。 The attachment method is not particularly limited, and is, for example, a vacuum pressure forming method.

真空壓空成形法,係例如使用真空加壓式層合機,以電磁波遮蔽用膜片100被覆基板5上之凸部61的方法。首先在能設定為真空氣體環境之密閉空間內,放置基板5與電磁波遮蔽用膜片100使其重疊,並使得基板5之形成了凸部61之側之面,與電磁波遮蔽用膜片100之電磁波阻擋層3側之面為彼此相對。之後,將此等於加熱下,使前述密閉空間處於真空氣體環境下,並使得電磁波遮蔽用膜片100從電磁波遮蔽用膜片100側均勻地向基板5接近。之後將此等加壓。藉此實施真空壓空成形法。 The vacuum pressure forming method is a method in which the convex portion 61 on the substrate 5 is coated with the electromagnetic wave shielding film 100 by using a vacuum pressure laminator. First, the substrate 5 and the electromagnetic wave shielding film 100 are placed in a sealed space that can be set in a vacuum gas atmosphere, and the surface of the substrate 5 on the side where the convex portion 61 is formed, and the electromagnetic wave shielding film 100 are placed. The faces on the side of the electromagnetic wave blocking layer 3 are opposed to each other. Then, this is equal to heating, and the sealed space is placed in a vacuum gas atmosphere, and the electromagnetic wave shielding film 100 is uniformly approached from the electromagnetic wave shielding film 100 side toward the substrate 5. Then pressurize this. Thereby, a vacuum pressure forming method is carried out.

此時,本發明中,基材層1係由至少2層疊層而得之疊層體構成。藉由使基材層1為此構成,基材層1於以真空壓空成形法加熱時,能對於凸部61發揮優良的形狀追隨性。 In this case, in the present invention, the base material layer 1 is composed of a laminate obtained by laminating at least two layers. When the base material layer 1 is configured for this purpose, the base material layer 1 can exhibit excellent shape followability with respect to the convex portion 61 when heated by the vacuum pressure forming method.

因此於此狀態,藉由從電磁波遮蔽用膜片100側對於電磁波遮蔽用膜片100均勻地加壓,且同時使前述密閉空間處於真空氣體環境下,基材層1會因應凸部61之形狀而變形。再者,配合此變形,位於比基材層1更靠基板5側之電磁波阻擋層3,會因應凸部61之形狀而變形。藉此,會以電磁波阻擋層3因應凸部61之形狀而被推入凹部62之狀態,以電磁波阻擋層3來被覆凸部61。 Therefore, in this state, the electromagnetic wave shielding film 100 is uniformly pressurized from the electromagnetic wave shielding film 100 side while the sealed space is in a vacuum gas atmosphere, and the substrate layer 1 is adapted to the shape of the convex portion 61. And deformation. Further, with this deformation, the electromagnetic wave blocking layer 3 located on the substrate 5 side of the base material layer 1 is deformed in accordance with the shape of the convex portion 61. Thereby, the electromagnetic wave blocking layer 3 is pushed into the concave portion 62 in accordance with the shape of the convex portion 61, and the convex portion 61 is covered with the electromagnetic wave blocking layer 3.

在如此之貼附步驟,貼附溫度不特別限定,宜為100℃以上、200℃以下較佳,更佳為120℃以上、180℃以下。 In the attachment step, the attachment temperature is not particularly limited, and is preferably 100 ° C or more and 200 ° C or less, more preferably 120 ° C or more and 180 ° C or less.

又,貼附壓力不特別限定,宜為0.5MPa以上、5.0MPa以下較佳,更 佳為1.0MPa以上、3.0MPa以下。 Further, the attachment pressure is not particularly limited, and is preferably 0.5 MPa or more and 5.0 MPa or less, more preferably Preferably, it is 1.0 MPa or more and 3.0 MPa or less.

再者,貼附時間不特別限定,宜為1分鐘以上、30分鐘以下較佳,更佳為5分鐘以上、15分鐘以下。 Further, the attachment time is not particularly limited, but is preferably 1 minute or longer and 30 minutes or shorter, more preferably 5 minutes or longer and 15 minutes or shorter.

藉由將貼附步驟中條件設為上述範圍內,能以已將電磁波阻擋層3推入基板5上之凹部62之狀態,以此電磁波阻擋層3確實地被覆凸部61。 By setting the conditions in the attaching step to the above range, the electromagnetic wave blocking layer 3 can be surely covered with the convex portion 61 in a state where the electromagnetic wave blocking layer 3 is pushed into the concave portion 62 on the substrate 5.

(剝離步驟) (peeling step)

前述剝離步驟,例如:圖2(b)所示,係於前述貼附步驟之後將基材層1從電磁波遮蔽用膜片100剝離之步驟。 The peeling step is, for example, a step of peeling the base material layer 1 from the electromagnetic wave shielding film 100 after the attaching step, as shown in FIG. 2(b).

依此剝離步驟,本實施形態中,電磁波遮蔽用膜片100中之基材層1與電磁波阻擋層3之界面發生剝離,其結果將基材層1從電磁波阻擋層3剝離。藉此,以已從電磁波阻擋層3剝離基材層1之狀態,利用電磁波阻擋層3來被覆凸部61。 In the present embodiment, the interface between the base material layer 1 and the electromagnetic wave blocking layer 3 in the electromagnetic wave shielding film 100 is peeled off, and as a result, the base material layer 1 is peeled off from the electromagnetic wave blocking layer 3. Thereby, the convex portion 61 is covered with the electromagnetic wave blocking layer 3 in a state where the base material layer 1 has been peeled off from the electromagnetic wave blocking layer 3.

又,如此之利用使用電磁波遮蔽用膜片100之電磁波阻擋層3來被覆凸部61,如圖2,可因應貼附之電磁波遮蔽用膜片100之形狀,而將凸部61以電磁波阻擋層3被覆。所以,藉由因應待被覆之凸部61之形狀而適當設定電磁波遮蔽用膜片100之形狀,能將待被覆之凸部61選擇性的以電磁波阻擋層3被覆。亦即,能以電磁波阻擋層3進行凸部61之選擇性的電磁波遮蔽。 In addition, the convex portion 61 is covered by the electromagnetic wave blocking layer 3 using the electromagnetic wave shielding film 100. As shown in Fig. 2, the convex portion 61 can be shielded by an electromagnetic wave in accordance with the shape of the electromagnetic wave shielding film 100 to be attached. 3 covers. Therefore, by appropriately setting the shape of the electromagnetic wave shielding film 100 in accordance with the shape of the convex portion 61 to be covered, the convex portion 61 to be coated can be selectively covered with the electromagnetic wave blocking layer 3. That is, the selective electromagnetic wave shielding of the convex portion 61 can be performed by the electromagnetic wave blocking layer 3.

又,作為剝離基材層1之方法,不特別限定,由於真空壓空成形法結束(上述貼附步驟)後之電磁波遮蔽用膜片100為高溫狀態時,會有可能發生基材層1伸長、樹脂殘留等,且剝離作業性下降,所以可列舉以手工作業剝離。 In addition, the method of peeling off the base material layer 1 is not particularly limited, and when the electromagnetic wave shielding film 100 after the vacuum pressure forming method is completed (the above-described attaching step) is in a high temperature state, the substrate layer 1 may be elongated. Residual resin, etc., and the workability of peeling is lowered, so that peeling by hand can be mentioned.

該利用手工作業之剝離,例如:首先握持基材層1之其中一端部。然後, 以此握持之端部為起點,將基材層1從電磁波阻擋層3剝離。其次,從此端部向基材層1之中央部,再向基材層1之另一端部,依序將基材層1從電磁波阻擋層3剝離。如此,從電磁波阻擋層3將基材層1剝離。 This peeling by manual work, for example, first holds one end portion of the base material layer 1. then, The base layer 1 is peeled off from the electromagnetic wave blocking layer 3 with the end portion held thereby as a starting point. Next, the base material layer 1 is sequentially peeled off from the electromagnetic wave blocking layer 3 from the end portion to the central portion of the base material layer 1 and to the other end portion of the base material layer 1. In this manner, the base material layer 1 is peeled off from the electromagnetic wave blocking layer 3.

剝離溫度為180℃以下較佳,更佳為150℃以下,又更佳為100℃以下。 The peeling temperature is preferably 180 ° C or lower, more preferably 150 ° C or lower, and still more preferably 100 ° C or lower.

藉由經過如以上之步驟,能以已從電磁波阻擋層3剝離基材層1之狀態,以電磁波阻擋層3來被覆凸部61。 By the above steps, the convex portion 61 can be covered with the electromagnetic wave blocking layer 3 in a state where the base material layer 1 has been peeled off from the electromagnetic wave blocking layer 3.

又,本實施形態中,如圖1所示,係針對使用依序疊層了基材層1(第1層11、第2層13、第3層12)、電磁波阻擋層3之磁波遮蔽用膜片100,以電磁波阻擋層3來被覆基板5上之凸部61之情形說明。但是電磁波遮蔽用膜片100之層構成不限於此情形,例如可如以下所示之第2~第12實施形態之層構成的電磁波遮蔽用膜片100。 In the present embodiment, as shown in FIG. 1, the magnetic wave shielding for the base material layer 1 (the first layer 11, the second layer 13, and the third layer 12) and the electromagnetic wave blocking layer 3 are laminated in this order. The case of the diaphragm 100 in which the convex portion 61 on the substrate 5 is covered with the electromagnetic wave blocking layer 3 will be described. However, the layer configuration of the electromagnetic wave shielding film 100 is not limited to this. For example, the electromagnetic wave shielding film 100 having the layers of the second to twelfth embodiments shown below can be used.

<第2實施形態> <Second embodiment>

以下針對本發明之電磁波遮蔽用膜片之第2實施形態說明。 The second embodiment of the electromagnetic wave shielding film of the present invention will be described below.

圖3係代表本發明之電磁波遮蔽用膜片之第2實施形態之縱剖面圖。又,以下說明中,為方便說明,圖3中之上側稱為「上」、下側稱為「下」。 Fig. 3 is a longitudinal cross-sectional view showing a second embodiment of the electromagnetic wave shielding film of the present invention. In the following description, for convenience of explanation, the upper side in FIG. 3 is referred to as "upper" and the lower side is referred to as "lower".

以下針對圖3所示之電磁波遮蔽用膜片100說明,但針對與圖1所示之電磁波遮蔽用膜片100之不同點說明,關於同樣事項則將說明省略。 The electromagnetic wave shielding film 100 shown in FIG. 3 will be described below, but the description of the electromagnetic wave shielding film 100 shown in FIG. 1 will be omitted.

圖3所示之電磁波遮蔽用膜片100中,省略了基材層1具備之第1層11之形成,藉此,基材層1成為第2層13與第3層12從頂面側起依序疊層之2層構成之疊層體,除此以外與圖1所示之電磁波遮蔽用膜片100為相同。 In the electromagnetic wave shielding film 100 shown in FIG. 3, the formation of the first layer 11 provided in the base material layer 1 is omitted, whereby the base material layer 1 becomes the second layer 13 and the third layer 12 from the top surface side. The laminate of the two layers laminated in this order is the same as the electromagnetic wave shielding film 100 shown in Fig. 1 .

亦即,本實施形態中,電磁波遮蔽用膜片100,係依序由疊層第2層 13、第3層12構成之基材層1、與電磁波阻擋層3而得之疊層體。 In other words, in the present embodiment, the electromagnetic wave shielding film 100 is sequentially laminated with the second layer. 13. A substrate obtained by the third layer 12 and a laminate of the electromagnetic wave barrier layer 3.

此構成之電磁波遮蔽用膜片100,在貼附步驟中使用在將電磁波阻擋層3推入基板5上之凹部62之真空加壓式層合機等所擁有之推壓部,具備與第2層13之離型性,因而省略第1層11之形成。 The electromagnetic wave shielding film 100 having such a configuration is provided with a pressing portion possessed by a vacuum pressure laminator or the like that pushes the electromagnetic wave blocking layer 3 into the concave portion 62 on the substrate 5 in the attaching step, and is provided with the second portion. The release property of the layer 13 thus omits the formation of the first layer 11.

於此情形,前述推壓部與第2層13之接觸面之離型性程度,可以用前述接觸面之表面張力表示。前述接觸面之表面張力,宜為20~40mN/m較理想,25~35mN/m更理想。藉由使前述接觸面具有此範圍內之表面張力,在使用真空加壓式層合機等之推入處理之後,能從第2層13將推壓部確實地剝離。 In this case, the degree of release property of the contact surface between the pressing portion and the second layer 13 can be expressed by the surface tension of the contact surface. The surface tension of the contact surface is preferably 20 to 40 mN/m, and more preferably 25 to 35 mN/m. By having the contact surface having the surface tension in this range, the pressing portion can be reliably peeled off from the second layer 13 after the push-in process using a vacuum pressure laminator or the like.

如此構成之本實施形態之電磁波遮蔽用膜片100,也可以與前述第1實施形態之電磁波遮蔽用膜片100同樣地使用,可獲得與前述第1實施形態之電磁波遮蔽用膜片100為同樣之效果。 The electromagnetic wave shielding film 100 of the present embodiment, which is configured in the same manner as the electromagnetic wave shielding film 100 of the first embodiment, can be used in the same manner as the electromagnetic wave shielding film 100 of the first embodiment. The effect.

<第3實施形態> <Third embodiment>

其次針對本發明之電磁波遮蔽用膜片之第3實施形態說明。 Next, a third embodiment of the electromagnetic wave shielding film of the present invention will be described.

圖4係代表本發明之電磁波遮蔽用膜片之第3實施形態之縱剖面圖。又,以下說明中為了方便說明,稱圖4中之上側為「上」、下側為「下」。 Fig. 4 is a longitudinal cross-sectional view showing a third embodiment of the electromagnetic wave shielding film of the present invention. In the following description, for convenience of explanation, the upper side in FIG. 4 is referred to as "upper" and the lower side is "down".

以下針對圖4所示之電磁波遮蔽用膜片100說明,但針對與圖1所示之電磁波遮蔽用膜片100之不同點說明,關於同樣事項則將說明省略。 The electromagnetic wave shielding film 100 shown in FIG. 4 will be described below, but the description of the electromagnetic wave shielding film 100 shown in FIG. 1 will be omitted.

圖4所示之電磁波遮蔽用膜片100,省略形成基材層1所具備之第3層12,因而,基材層1成為第1層11與第2層13從頂面側起依序疊層之2層構成之疊層體,除此以外與圖1所示之電磁波遮蔽用膜片100相同。 In the electromagnetic wave shielding film 100 shown in FIG. 4, the third layer 12 included in the base layer 1 is omitted. Therefore, the base layer 11 is formed by stacking the first layer 11 and the second layer 13 from the top surface side. The laminate of the two layers of the layer is the same as the diaphragm 100 for electromagnetic wave shielding shown in Fig. 1 .

亦即,本實施形態中,電磁波遮蔽用膜片100,係依序疊層由第1層 11、第2層13構成之基材層1、與電磁波阻擋層3而得之疊層體。 In other words, in the present embodiment, the electromagnetic wave shielding film 100 is laminated in this order by the first layer. 11. A substrate obtained by the second layer 13 and a laminate of the electromagnetic wave barrier layer 3.

此構成之電磁波遮蔽用膜片100,在剝離步驟中將基材層1從電磁波阻擋層3剝離時,係將基材層1在第2層13與電磁波阻擋層3之界面從電磁波阻擋層3剝離。如此之剝離中,電磁波阻擋層3具備與第2層13之離型性,因此省略第3層12之形成。 In the electromagnetic wave shielding film 100 having such a configuration, when the base material layer 1 is peeled off from the electromagnetic wave blocking layer 3 in the peeling step, the interface of the base material layer 1 between the second layer 13 and the electromagnetic wave blocking layer 3 is removed from the electromagnetic wave blocking layer 3 Stripped. In such peeling, since the electromagnetic wave blocking layer 3 has the release property from the second layer 13, the formation of the third layer 12 is omitted.

於此情形,電磁波阻擋層3與第2層13之接觸面之離型性程度,可以用前述接觸面之表面張力表示。前述接觸面之表面張力,宜為20~40mN/m較理想,25~35mN/m更理想。藉由使前述接觸面具有此範圍內之表面張力,在使用真空加壓式層合機等之推入處理之後,能從第2層13將電磁波阻擋層3確實地剝離。 In this case, the degree of release of the contact surface between the electromagnetic wave blocking layer 3 and the second layer 13 can be expressed by the surface tension of the contact surface. The surface tension of the contact surface is preferably 20 to 40 mN/m, and more preferably 25 to 35 mN/m. By having the contact surface having the surface tension in this range, the electromagnetic wave blocking layer 3 can be reliably peeled off from the second layer 13 after the push-in process using a vacuum press laminator or the like.

如此之具有表面張力之電磁波阻擋層3,例如使導電性高分子、碳系材料分散於如聚胺甲酸酯之熱硬化性樹脂而得之樹脂等。 The electromagnetic wave blocking layer 3 having such a surface tension is, for example, a resin obtained by dispersing a conductive polymer or a carbon-based material in a thermosetting resin such as polyurethane.

如此之構成之本實施形態之電磁波遮蔽用膜片100,也可與前述第1實施形態之電磁波遮蔽用膜片100同樣地使用,可獲得與前述第1實施形態之電磁波遮蔽用膜片100為同樣的效果。 The electromagnetic wave shielding film 100 of the present embodiment, which is configured in the same manner as the electromagnetic wave shielding film 100 of the first embodiment, can be used as the electromagnetic wave shielding film 100 of the first embodiment. The same effect.

<第4實施形態> <Fourth embodiment>

其次針對本發明之電磁波遮蔽用膜片之第4實施形態說明。 Next, a fourth embodiment of the electromagnetic wave shielding film of the present invention will be described.

圖5係代表本發明之電磁波遮蔽用膜片之第4實施形態之縱剖面圖。又,以下說明中為了方便說明,稱圖5中之上側為「上」、下側為「下」。 Fig. 5 is a longitudinal sectional view showing a fourth embodiment of the electromagnetic wave shielding film of the present invention. In the following description, for convenience of explanation, the upper side in FIG. 5 is referred to as "upper" and the lower side is "lower".

以下針對圖5所示之電磁波遮蔽用膜片100說明,但針對與圖1所示之電磁波遮蔽用膜片100之不同點說明,關於同樣事項則將說明省略。 The electromagnetic wave shielding film 100 shown in FIG. 5 will be described below, but the description of the electromagnetic wave shielding film 100 shown in FIG. 1 will be omitted.

圖5所示之電磁波遮蔽用膜片100中,阻擋層3並非單層構成,而是 由吸收層31及反射層32構成的疊層體,此等層從基材層1之底面(其中一面)側起依此順序疊層,並且吸收層31接觸基材層1(第3層12),除此以外與圖1所示之電磁波遮蔽用膜片100為相同。 In the electromagnetic wave shielding film 100 shown in FIG. 5, the barrier layer 3 is not composed of a single layer but a laminate comprising an absorbing layer 31 and a reflecting layer 32, which are laminated in this order from the bottom surface (one side) side of the substrate layer 1, and the absorbing layer 31 is in contact with the substrate layer 1 (the third layer 12) Other than this, it is the same as the electromagnetic wave shielding film 100 shown in FIG.

亦即,本實施形態中,電磁波遮蔽用膜片100,係依序將由第1層11、第2層13、第3層12構成之基材層1、及由吸收層31、反射層32構成之阻擋層3疊層而得之疊層體。藉由使用由如此之疊層體構成之具備阻擋層3之電磁波遮蔽用膜片100來被覆基板5上之凸部61,能在配置吸收層31於相對於凸部61而言反射層32之相反側,配置反射層32於與凸部61接觸之側之狀態,將凸部61以阻擋層3被覆。如此,本實施形態中,阻擋層3係由吸收層31與反射層32構成之疊層體構成,所以能提高阻擋層3所致之電磁波遮蔽性。 In the present embodiment, the electromagnetic wave shielding film 100 is composed of the base layer 1 composed of the first layer 11, the second layer 13, and the third layer 12, and the absorption layer 31 and the reflection layer 32. The laminate of the barrier layer 3 is laminated. By using the electromagnetic wave shielding film 100 having the barrier layer 3 formed of such a laminate to cover the convex portion 61 on the substrate 5, the absorbing layer 31 can be disposed on the reflective layer 32 with respect to the convex portion 61. On the opposite side, the convex portion 61 is covered with the barrier layer 3 in a state where the reflective layer 32 is disposed on the side in contact with the convex portion 61. As described above, in the present embodiment, since the barrier layer 3 is composed of a laminate including the absorption layer 31 and the reflection layer 32, the electromagnetic wave shielding property by the barrier layer 3 can be improved.

又,此構成之阻擋層3中,吸收層31於150℃之貯藏彈性係數為1.0E+05~1.0E+09Pa較理想,5.0E+05~5.0E+08Pa更理想。 Further, in the barrier layer 3 having such a configuration, the storage elastic modulus of the absorbent layer 31 at 150 ° C is preferably 1.0E+05 to 1.0E+09Pa, and more preferably 5.0E+05 to 5.0E+08Pa.

再者,反射層32於150℃之貯藏彈性係數為1.0E+05~1.0E+09Pa較理想,5.0E+05~5.0E+08Pa更理想。 Furthermore, the storage elastic modulus of the reflective layer 32 at 150 ° C is preferably 1.0E+05~1.0E+09Pa, and more preferably 5.0E+05~5.0E+08Pa.

藉由將以如上述順序疊層之吸收層31及反射層32之貯藏彈性係數分別設為前述範圍內,能因應來自前述基材層1之推壓力,使具備吸收層31及反射層32之阻擋層3因應凸部61之形狀而更確實地變形。 By setting the storage elastic coefficients of the absorption layer 31 and the reflection layer 32 laminated in the above-described order to the above-described ranges, the absorption layer 31 and the reflection layer 32 can be provided in accordance with the pressing force from the base material layer 1. The barrier layer 3 is more reliably deformed in accordance with the shape of the convex portion 61.

如此之構成之本實施形態之電磁波遮蔽用膜片100,也可與前述第1實施形態之電磁波遮蔽用膜片100同樣地使用,可獲得與前述第1實施形態之電磁波遮蔽用膜片100為同樣的效果。 The electromagnetic wave shielding film 100 of the present embodiment, which is configured in the same manner as the electromagnetic wave shielding film 100 of the first embodiment, can be used as the electromagnetic wave shielding film 100 of the first embodiment. The same effect.

<第5實施形態> <Fifth Embodiment>

其次針對本發明之電磁波遮蔽用膜片之第5實施形態說明。 Next, a fifth embodiment of the electromagnetic wave shielding film of the present invention will be described.

圖6係代表本發明之電磁波遮蔽用膜片之第5實施形態之縱剖面圖。又,以下說明中為了方便說明,稱圖6中之上側為「上」、下側為「下」。 Fig. 6 is a longitudinal cross-sectional view showing a fifth embodiment of the electromagnetic wave shielding film of the present invention. In the following description, for convenience of explanation, the upper side in FIG. 6 is referred to as "upper" and the lower side is "lower".

以下針對圖6所示之電磁波遮蔽用膜片100說明,但針對與圖1所示之電磁波遮蔽用膜片100之不同點說明,關於同樣事項則將說明省略。 The electromagnetic wave shielding film 100 shown in FIG. 6 will be described below, but the description of the electromagnetic wave shielding film 100 shown in FIG. 1 will be omitted.

圖6所示之電磁波遮蔽用膜片100中,阻擋層3並非單層構成,而是由反射層32及吸收層31構成之疊層體,此等層從基材層1之底面(其中一面)側起以此順序疊層,且反射層32接觸基材層1(第3層12),除此以外與圖1所示之電磁波遮蔽用膜片100為相同。 In the electromagnetic wave shielding film 100 shown in Fig. 6, the barrier layer 3 is not a single layer but a laminate composed of the reflective layer 32 and the absorbing layer 31, and the layers are from the bottom surface of the substrate layer 1 (one of the layers) The side is laminated in this order, and the reflective layer 32 is in contact with the substrate layer 1 (the third layer 12), and is the same as the electromagnetic wave shielding film 100 shown in Fig. 1 .

亦即,本實施形態中,電磁波遮蔽用膜片100,係依序疊層由第1層11、第2層13、第3層12構成之基材層1、及由反射層32、吸收層31構成之阻擋層3疊層而得之疊層體。藉由使用由如此之疊層體構成之具備阻擋層3之電磁波遮蔽用膜片100來被覆基板5上之凸部61,於係配置反射層32於吸收層31相對於凸部61為相反側、配置吸收層31於接觸凸部61之側之狀態,將凸部61以阻擋層3被覆。如此,本實施形態中,阻擋層3係由反射層32與吸收層31構成的疊層體構成,所以能更提高阻擋層3所致之電磁波遮蔽性。 In the present embodiment, the electromagnetic wave shielding film sheet 100 is formed by sequentially laminating the base material layer 1 composed of the first layer 11, the second layer 13, and the third layer 12, and the reflective layer 32 and the absorption layer. A laminate in which the barrier layer 3 is formed by lamination. The convex portion 61 on the substrate 5 is covered by the electromagnetic wave shielding film 100 having the barrier layer 3 formed of such a laminate, and the reflective layer 32 is disposed on the opposite side of the absorption layer 31 with respect to the convex portion 61. The absorbing layer 31 is disposed on the side contacting the convex portion 61, and the convex portion 61 is covered with the barrier layer 3. As described above, in the present embodiment, since the barrier layer 3 is composed of a laminate including the reflective layer 32 and the absorption layer 31, the electromagnetic wave shielding property by the barrier layer 3 can be further improved.

又,此構成之阻擋層3中,反射層32於150℃之貯藏彈性係數為1.0E+05~1.0E+09Pa較理想,5.0E+05~5.0E+08Pa更理想。 Further, in the barrier layer 3 having such a configuration, the storage elastic modulus of the reflective layer 32 at 150 ° C is preferably 1.0E+05 to 1.0E+09Pa, and more preferably 5.0E+05 to 5.0E+08Pa.

再者,吸收層31於150℃之貯藏彈性係數為1.0E+05~1.0E+09Pa較理想,5.0E+05~5.0E+08Pa更理想。 Furthermore, the storage elastic modulus of the absorbing layer 31 at 150 ° C is preferably 1.0E+05~1.0E+09Pa, and 5.0E+05~5.0E+08Pa is more desirable.

藉由將依如上述順序疊層之反射層32及吸收層31之貯藏彈性係數分別設為前述範圍內,能因應來自前述基材層1之推壓力,使具備反射層32及吸收層31之阻擋層3因應凸部61之形狀更確實地變形。 By setting the storage elastic coefficients of the reflective layer 32 and the absorbing layer 31 laminated in the above-described order to the above-described ranges, the reflective layer 32 and the absorbing layer 31 can be provided in response to the pressing force from the base material layer 1. The barrier layer 3 is more surely deformed in accordance with the shape of the convex portion 61.

如此之構成之本實施形態之電磁波遮蔽用膜片100,也可與前述第1實施形態之電磁波遮蔽用膜片100同樣地使用,可獲得與前述第1實施形態之電磁波遮蔽用膜片100為同樣的效果。 The electromagnetic wave shielding film 100 of the present embodiment, which is configured in the same manner as the electromagnetic wave shielding film 100 of the first embodiment, can be used as the electromagnetic wave shielding film 100 of the first embodiment. The same effect.

又,前述第4實施形態之電磁波遮蔽用膜片100、與前述第5實施形態之電磁波遮蔽用膜片100,除了阻擋層3所擁有之反射層32與吸收層31的疊層順序不同,除此以外彼此相同。如前述,吸收層31係藉由將入射於吸收層31之電磁波吸收以阻擋電磁波,所以因此吸收,電磁波消滅。因此,第4實施形態之電磁波遮蔽用膜片100,能夠有確實防止由反射層32反射之電磁波對於未被阻擋層3被覆之其他構件等帶來不利影響的好處。所以,此等第4及第5實施形態之電磁波遮蔽用膜片100,較佳宜配置吸收層31於反射層32相對於凸部61為相反側之第4實施形態之電磁波遮蔽用膜片100較佳。 In addition, the electromagnetic wave shielding film 100 of the fourth embodiment and the electromagnetic wave shielding film 100 of the fifth embodiment are different from the lamination order of the reflective layer 32 and the absorbing layer 31 of the barrier layer 3, except This is the same as each other. As described above, the absorption layer 31 absorbs electromagnetic waves incident on the absorption layer 31 to block electromagnetic waves, so that absorption is performed, and electromagnetic waves are destroyed. Therefore, the electromagnetic wave shielding film 100 of the fourth embodiment can have an advantage of reliably preventing electromagnetic waves reflected by the reflective layer 32 from adversely affecting other members not covered by the barrier layer 3. Therefore, in the electromagnetic wave shielding film 100 of the fourth and fifth embodiments, it is preferable to arrange the electromagnetic wave shielding film 100 of the fourth embodiment in which the absorption layer 31 is opposite to the convex portion 61 of the reflection layer 32. Preferably.

又,前述第4實施形態之電磁波遮蔽用膜片100、與前述第5實施形態之電磁波遮蔽用膜片100,係成為阻擋層3具備了反射層32與吸收層31各1層之2層構成之疊層體。但是阻擋層3不限於如此之2層構成之疊層體,也可由至少具備反射層32與吸收層31中任一者2層以上之3層以上之疊層體構成。 In addition, the electromagnetic wave shielding film 100 of the fourth embodiment and the electromagnetic wave shielding film 100 of the fifth embodiment are configured such that the barrier layer 3 has two layers of one layer of the reflective layer 32 and the absorbing layer 31. The laminate. However, the barrier layer 3 is not limited to the laminate having the two-layer structure described above, and may be composed of a laminate having at least three or more layers of at least one of the reflective layer 32 and the absorption layer 31.

<第6實施形態> <Sixth embodiment>

其次針對本發明之電磁波遮蔽用膜片之第6實施形態說明。 Next, a sixth embodiment of the electromagnetic wave shielding film of the present invention will be described.

圖7係代表本發明之電磁波遮蔽用膜片之第6實施形態之縱剖面圖。又,以下說明中為了方便說明,稱圖7中之上側為「上」、下側為「下」。 Fig. 7 is a longitudinal sectional view showing a sixth embodiment of the electromagnetic wave shielding film of the present invention. In the following description, for convenience of explanation, the upper side in FIG. 7 is referred to as "upper" and the lower side is referred to as "lower".

以下針對圖7所示之電磁波遮蔽用膜片100說明,但針對與圖1所示之電磁波遮蔽用膜片100之不同點說明,關於同樣事項則將說明省略。 The electromagnetic wave shielding film 100 shown in FIG. 7 will be described below, but the description of the electromagnetic wave shielding film 100 shown in FIG. 1 will be omitted.

圖7所示之電磁波遮蔽用膜片100,係在基材層1與電磁波阻擋層3之間形成了絕緣層2,除此以外與圖1所示之電磁波遮蔽用膜片100為相同。 The electromagnetic wave shielding film 100 shown in FIG. 7 is the same as the electromagnetic wave shielding film 100 shown in FIG. 1 except that the insulating layer 2 is formed between the base material layer 1 and the electromagnetic wave blocking layer 3.

亦即,如圖7所示、本實施形態中,電磁波遮蔽用膜片100係包含基材層1、絕緣層2、及電磁波阻擋層3而構成。絕緣層2及電磁波阻擋層3,係依此順序從基材層1之底面(其中一面)側起疊層,且絕緣層2接觸基材層1。 In other words, the electromagnetic wave shielding film 100 includes the base material layer 1, the insulating layer 2, and the electromagnetic wave blocking layer 3, as shown in FIG. The insulating layer 2 and the electromagnetic wave blocking layer 3 are laminated in this order from the bottom surface (one surface) side of the base material layer 1, and the insulating layer 2 contacts the base material layer 1.

<基材層1> <Substrate layer 1>

首先針對與圖1所示之電磁波遮蔽用膜片100之基材層1之不同點說明。 First, the difference from the base material layer 1 of the electromagnetic wave shielding film 100 shown in FIG. 1 will be described.

第1層11於25~150℃之平均線膨脹係數,為50~1000[ppm/℃]較理想,100~700[ppm/℃]更理想。藉由設定第1層11之平均線膨脹係數為此範圍內,電磁波遮蔽用膜片100加熱時,第1層11具有優良的伸縮性。所以,能更確實提高電磁波阻擋層3及絕緣層2對於凸部61之形狀追隨性。 The average linear expansion coefficient of the first layer 11 at 25 to 150 ° C is preferably 50 to 1000 [ppm / ° C], and more preferably 100 to 700 [ppm / ° C]. When the average linear expansion coefficient of the first layer 11 is set to be within this range, when the electromagnetic wave shielding film 100 is heated, the first layer 11 has excellent stretchability. Therefore, the shape followability of the electromagnetic wave blocking layer 3 and the insulating layer 2 with respect to the convex portion 61 can be more surely improved.

又,第2層13於25~150℃之平均線膨脹係數,為500以上[ppm/℃]較理想,1000以上[ppm/℃]更理想。藉由設定第2層13之平均線膨脹係數為此範圍內,電磁波遮蔽用膜片100加熱時,第2層13,相比於第3層12容易有更優良的伸縮性。所以,能使第2層13,進一步使電磁波阻擋層3及絕緣層2對於凸部61之形狀追隨性更確實地提高。 Further, the average linear expansion coefficient of the second layer 13 at 25 to 150 ° C is preferably 500 or more [ppm / ° C], and more preferably 1000 or more [ppm / ° C]. When the electromagnetic wave shielding film 100 is heated within the range in which the average linear expansion coefficient of the second layer 13 is set, the second layer 13 is more likely to have more excellent stretchability than the third layer 12. Therefore, the second layer 13 can further improve the shape followability of the electromagnetic wave blocking layer 3 and the insulating layer 2 with respect to the convex portion 61.

又,藉由將各層11~13之平均線膨脹係數分別適當設定為前述範圍內,能輕易設定後述基材層1於150℃之貯藏彈性係數為2.0E+05~2.0E+08Pa之範圍內。 Further, by appropriately setting the average linear expansion coefficients of the respective layers 11 to 13 within the above range, it is possible to easily set the storage elastic modulus of the base material layer 1 described later at 150 ° C to be in the range of 2.0E+05 to 2.0E+08 Pa. .

又,以如上述疊層體構成之基材層1,於150℃之貯藏彈性係數為2.0E+05~2.0E+08Pa較理想,1.0E+06~1.0E+08Pa更佳,3.0E+06~6.0E+07Pa又更佳。 Further, in the base material layer 1 composed of the above laminate, the storage elastic modulus at 150 ° C is preferably 2.0E+05 to 2.0E+08 Pa, and 1.0E+06 to 1.0E+08 Pa is more preferable, 3.0E+ 06~6.0E+07Pa is even better.

如此,藉由將作用為提高絕緣層2及阻擋層3對於凸部61之形狀追隨 性之基材的基材層1加熱時之貯藏彈性係數設定為前述範圍內,當使用電磁波遮蔽用膜片100來被覆基板5上之凸部61時,能以絕緣層2及電磁波阻擋層3對應於凸部61之形狀之狀態,更確實地推入凹部62。其結果。能以阻擋層3更確實地被覆此設有凸部61之基板5,故能更提高此電磁波阻擋層3所致之對於設有凸部61之基板5之電磁波遮蔽(阻擋)性。 Thus, by the action of increasing the insulating layer 2 and the barrier layer 3, the shape of the convex portion 61 is followed. When the storage elastic modulus at the time of heating of the base material layer 1 of the base material is set to the above range, when the convex portion 61 on the substrate 5 is coated with the electromagnetic wave shielding film 100, the insulating layer 2 and the electromagnetic wave blocking layer 3 can be used. The recess 62 is more reliably pushed in accordance with the state of the shape of the convex portion 61. the result. Since the substrate 5 provided with the convex portion 61 can be more reliably covered by the barrier layer 3, the electromagnetic wave shielding (barrier) property to the substrate 5 provided with the convex portion 61 due to the electromagnetic wave blocking layer 3 can be further improved.

<絕緣層2> <insulation layer 2>

其次針對絕緣層2說明。 Next, the description will be given for the insulating layer 2.

絕緣層2,在本實施形態中係與基材層1(第3層12)接觸而設置。從基材層1側起,依序疊層絕緣層2、電磁波阻擋層3。藉由使用以如此方式疊層之具備絕緣層2及電磁波阻擋層3之電磁波遮蔽用膜片100來被覆基板5上之凸部61,能使電磁波阻擋層3接觸基板5及電子零件4,且從基板5側起依序以電磁波阻擋層3、絕緣層2來被覆電子零件4。 In the present embodiment, the insulating layer 2 is provided in contact with the base material layer 1 (the third layer 12). The insulating layer 2 and the electromagnetic wave blocking layer 3 are laminated in this order from the side of the base material layer 1. By coating the convex portion 61 on the substrate 5 with the electromagnetic wave shielding film 100 having the insulating layer 2 and the electromagnetic wave blocking layer 3 laminated in this manner, the electromagnetic wave blocking layer 3 can be brought into contact with the substrate 5 and the electronic component 4, and The electronic component 4 is coated with the electromagnetic wave blocking layer 3 and the insulating layer 2 in this order from the substrate 5 side.

如上,本實施形態中,絕緣層2係介隔電磁波阻擋層3而被覆基板5及電子零件4。藉此將基板5、電子零件4及電磁波阻擋層3,與介隔絕緣層2而位在與基板5為相反側之其他構件(電子零件等)絕緣。 As described above, in the present embodiment, the insulating layer 2 covers the substrate 5 and the electronic component 4 with the electromagnetic wave blocking layer 3 interposed therebetween. Thereby, the substrate 5, the electronic component 4, and the electromagnetic wave blocking layer 3 are insulated from the other member (electronic component or the like) on the opposite side of the substrate 5 from the insulating edge layer 2.

作為此絕緣層2,例如具有熱硬化性之絕緣樹脂或具有熱塑性之絕緣樹脂(絕緣膜)。該等之中,宜使用具有熱塑性之絕緣樹脂較佳。具有熱塑性之絕緣樹脂,係彎曲性優異之膜。故,貼附步驟中,將基材層1當作對於凹部62進行推入用基材,並將絕緣層2及電磁波阻擋層3推入基板5上之凹部62時,能使絕緣層2因應凸部61之形狀確實地追隨。又,具有熱塑性之絕緣樹脂若加熱到其軟化點溫度,能從黏著對象之基板再剝離,所以於修理基板時特別有用。 As the insulating layer 2, for example, an insulating resin having thermosetting properties or an insulating resin (insulating film) having thermoplasticity is used. Among these, it is preferred to use a thermoplastic resin. It has a thermoplastic insulating resin and is a film excellent in flexibility. Therefore, in the attaching step, when the base material layer 1 is used as a base material for pushing the concave portion 62, and the insulating layer 2 and the electromagnetic wave blocking layer 3 are pushed into the concave portion 62 on the substrate 5, the insulating layer 2 can be made to respond. The shape of the convex portion 61 surely follows. Further, since the thermoplastic insulating resin is heated to the softening point temperature and can be peeled off from the substrate to be adhered, it is particularly useful for repairing the substrate.

具有熱塑性之絕緣樹脂,例如:熱塑性聚酯、α-烯烴、乙酸乙烯酯、聚乙烯基縮醛、乙烯乙酸乙烯酯、氯乙烯、壓克力、聚醯胺、纖維素。該等之中,從與基板之密合性、彎曲性、耐藥品性優異之理由,使用熱塑性聚 酯、α-烯烴較佳。 Thermoplastic insulating resin, for example: thermoplastic polyester, α-olefin, vinyl acetate, polyvinyl acetal, ethylene vinyl acetate, vinyl chloride, acrylic, polyamide, cellulose. Among these, thermoplastic polymerization is used for the purpose of excellent adhesion to the substrate, flexibility, and chemical resistance. Esters and α-olefins are preferred.

再者,具有熱塑性之絕緣樹脂中,在不損及耐熱性、耐彎曲性等性能之範圍,也可含有苯酚系樹脂、矽酮系樹脂、尿素系樹脂、丙烯酸系樹脂、聚酯系樹脂、聚醯胺系樹脂、聚醯亞胺系樹脂等。又,具有熱塑性之絕緣樹脂中,與後述導電性黏著劑層之情形同樣,在不降低黏著性、耐回焊性之範圍,也可添加矽烷偶聯劑、抗氧化劑、顏料、染料、黏著賦予樹脂、塑化劑、紫外線吸收劑、消泡劑、流平調整劑、填充劑、阻燃劑等。 In addition, the thermoplastic resin may contain a phenol resin, an oxime resin, a urea resin, an acrylic resin, a polyester resin, or the like without impairing properties such as heat resistance and bending resistance. A polyamide resin, a polyimide resin, or the like. Further, in the thermoplastic resin, as in the case of the conductive adhesive layer described later, a decane coupling agent, an antioxidant, a pigment, a dye, or an adhesive can be added without reducing the adhesion and the reflow resistance. Resin, plasticizer, UV absorber, defoamer, leveling agent, filler, flame retardant, etc.

絕緣層2之厚度T(D)不特別限定,宜為3μm以上、50μm以下較佳,4μm以上、30μm以下更佳,又更佳為5μm以上、20μm以下。絕緣層2之厚度小於前述下限值時,耐折疊性下降,在對於凸部61熱壓接後,於彎折部會有發生裂痕之虞。又,膜強度下降,難以承當作為導電性黏著劑層之絕緣性支持體的任務。超過前述上限值時,形狀追隨性有下降之虞。亦即,藉由設定絕緣層2之厚度T(D)為前述範圍內,絕緣層2能成為彎曲性更優良者。又,貼附步驟中,基材層1作為對於凹部62推入用基材,且將絕緣層2及電磁波阻擋層3推入基板5上之凹部62時,絕緣層2能因應凸部61之形狀而更確實地追隨。 The thickness T (D) of the insulating layer 2 is not particularly limited, but is preferably 3 μm or more and 50 μm or less, more preferably 4 μm or more and 30 μm or less, and still more preferably 5 μm or more and 20 μm or less. When the thickness of the insulating layer 2 is less than the above lower limit value, the folding resistance is lowered, and after the thermocompression bonding to the convex portion 61, cracks may occur in the bent portion. Further, the film strength is lowered, and it is difficult to serve as an insulating support for the conductive adhesive layer. When the above upper limit is exceeded, the shape followability is degraded. In other words, by setting the thickness T(D) of the insulating layer 2 within the above range, the insulating layer 2 can be more excellent in flexibility. Further, in the attaching step, when the base material layer 1 serves as a base material for pushing into the concave portion 62 and the insulating layer 2 and the electromagnetic wave blocking layer 3 are pushed into the concave portion 62 on the substrate 5, the insulating layer 2 can respond to the convex portion 61. Shape and follow more surely.

又,絕緣層2於25~150℃之平均線膨脹係數,為50~1000[ppm/℃]較理想,100~700[ppm/℃]更理想。藉由設定絕緣層2之平均線膨脹係數為此範圍內,電磁波遮蔽用膜片100加熱時、絕緣層2具有優良的伸縮性。所以,能使絕緣層2,進一步使電磁波阻擋層3對於凸部61之形狀追隨性更確實地提高。 Further, the average linear expansion coefficient of the insulating layer 2 at 25 to 150 ° C is preferably 50 to 1000 [ppm / ° C], and more preferably 100 to 700 [ppm / ° C]. When the average linear expansion coefficient of the insulating layer 2 is set to be within this range, the insulating layer 2 has excellent stretchability when the electromagnetic wave shielding film 100 is heated. Therefore, the insulating layer 2 can further improve the shape followability of the electromagnetic wave blocking layer 3 with respect to the convex portion 61.

又,此絕緣層2,如圖7、8所示,係以1層構成,除此以外,也可為疊層上述絕緣膜當中為不同者而得之2層以上之疊層體。 In addition, as shown in FIGS. 7 and 8, the insulating layer 2 may be formed of one layer, or a laminate of two or more layers which are different among the insulating films may be laminated.

如此之構成之本實施形態之電磁波遮蔽用膜片100,也可與前述第1實施形態之電磁波遮蔽用膜片100同樣地使用,可獲得與前述第1實施形態之電磁波遮蔽用膜片100為同樣的效果。 The electromagnetic wave shielding film 100 of the present embodiment, which is configured in the same manner as the electromagnetic wave shielding film 100 of the first embodiment, can be used as the electromagnetic wave shielding film 100 of the first embodiment. The same effect.

<第7實施形態> <Seventh embodiment>

以下針對本發明之電磁波遮蔽用膜片之第7實施形態說明。 The seventh embodiment of the electromagnetic wave shielding film of the present invention will be described below.

圖9係表示本發明之電磁波遮蔽用膜片之第7實施形態之縱剖面圖。又,以下說明中為了方便說明稱圖9中之上側為「上」、下側為「下」。 Fig. 9 is a longitudinal cross-sectional view showing a seventh embodiment of the electromagnetic wave shielding film of the present invention. In the following description, for convenience of explanation, the upper side in FIG. 9 is referred to as "upper" and the lower side is "down".

以下針對圖9所示之電磁波遮蔽用膜片100說明,但針對與圖3所示之電磁波遮蔽用膜片100之不同點說明,關於同樣事項則將說明省略。 Hereinafter, the electromagnetic wave shielding film 100 shown in FIG. 9 will be described, but the description of the electromagnetic wave shielding film 100 shown in FIG. 3 will be omitted.

圖9所示之電磁波遮蔽用膜片100中,絕緣層2係形成於基材層1與電磁波阻擋層3之間,除此以外與圖3所示之電磁波遮蔽用膜片100為相同。 In the electromagnetic wave shielding film 100 shown in FIG. 9, the insulating layer 2 is formed between the base material layer 1 and the electromagnetic wave blocking layer 3, and is the same as the electromagnetic wave shielding film 100 shown in FIG.

亦即,本實施形態中,電磁波遮蔽用膜片100,係依序將由第2層13與第3層12構成之基材層1、及絕緣層2、電磁波阻擋層3疊層而得之疊層體。又,絕緣層2與第6實施形態之絕緣層2相同,故將其說明省略。 In the present embodiment, the electromagnetic wave shielding film 100 is formed by laminating the base material layer 1 composed of the second layer 13 and the third layer 12, and the insulating layer 2 and the electromagnetic wave blocking layer 3 in this order. Layer body. Further, since the insulating layer 2 is the same as the insulating layer 2 of the sixth embodiment, the description thereof will be omitted.

如此構成之本實施形態之電磁波遮蔽用膜片100,也可以與前述第2實施形態之電磁波遮蔽用膜片100同樣地使用,並獲得與前述第2實施形態之電磁波遮蔽用膜片100為同樣的效果。又,本實施形態之電磁波遮蔽用膜片100具有絕緣層2,故可以與前述第6實施形態之電磁波遮蔽用膜片100同樣使用並與前述第6實施形態之電磁波遮蔽用膜片100獲得同樣效果。 The electromagnetic wave shielding film 100 of the present embodiment, which is configured in the same manner as the electromagnetic wave shielding film 100 of the second embodiment, can be used in the same manner as the electromagnetic wave shielding film 100 of the second embodiment. Effect. Further, since the electromagnetic wave shielding film 100 of the present embodiment has the insulating layer 2, it can be used in the same manner as the electromagnetic wave shielding film 100 of the sixth embodiment, and is obtained in the same manner as the electromagnetic wave shielding film 100 of the sixth embodiment. effect.

<第8實施形態> <Eighth Embodiment>

其次針對本發明之電磁波遮蔽用膜片之第8實施形態說明。 Next, an eighth embodiment of the electromagnetic wave shielding film of the present invention will be described.

圖10係表示本發明之電磁波遮蔽用膜片之第8實施形態之縱剖面圖。又,以下說明中為了方便說明,稱圖10中之上側為「上」、下側為「下」。 Fig. 10 is a longitudinal sectional view showing an eighth embodiment of the electromagnetic wave shielding film of the present invention. In the following description, for convenience of explanation, the upper side in FIG. 10 is referred to as "upper" and the lower side is referred to as "lower".

以下針對圖10所示之電磁波遮蔽用膜片100說明,但針對與圖4所示之電磁波遮蔽用膜片100之不同點說明,關於同樣事項則將說明省略。 The electromagnetic wave shielding film 100 shown in FIG. 10 will be described below, but the description of the electromagnetic wave shielding film 100 shown in FIG. 4 will be omitted.

圖10所示之電磁波遮蔽用膜片100中,絕緣層2係形成在基材層1與電磁波阻擋層3之間,除此以外與圖4所示之電磁波遮蔽用膜片100為相同 In the electromagnetic wave shielding film 100 shown in FIG. 10, the insulating layer 2 is formed between the base material layer 1 and the electromagnetic wave blocking layer 3, and is the same as the electromagnetic wave shielding film 100 shown in FIG.

亦即,本實施形態中,電磁波遮蔽用膜片100,係依序疊層由第1層11與第2層13構成之基材層1、絕緣層2、及電磁波阻擋層3而得之疊層體。又,絕緣層2與第6實施形態之絕緣層2相同,故將其說明省略。 In the present embodiment, the electromagnetic wave shielding film 100 is formed by laminating a base layer 1, an insulating layer 2, and an electromagnetic wave blocking layer 3 composed of the first layer 11 and the second layer 13 in this order. Layer body. Further, since the insulating layer 2 is the same as the insulating layer 2 of the sixth embodiment, the description thereof will be omitted.

如此構成之本實施形態之電磁波遮蔽用膜片100,也可以與前述第3實施形態之電磁波遮蔽用膜片100同樣地使用,並獲得與前述第3實施形態之電磁波遮蔽用膜片100為同樣的效果。又,本實施形態之電磁波遮蔽用膜片100具有絕緣層2,故可以與前述第6實施形態之電磁波遮蔽用膜片100同樣使用並與前述第6實施形態之電磁波遮蔽用膜片100獲得同樣效果。 The electromagnetic wave shielding film 100 of the present embodiment, which is configured in the same manner as the electromagnetic wave shielding film 100 of the third embodiment, can be used in the same manner as the electromagnetic wave shielding film 100 of the third embodiment. Effect. Further, since the electromagnetic wave shielding film 100 of the present embodiment has the insulating layer 2, it can be used in the same manner as the electromagnetic wave shielding film 100 of the sixth embodiment, and is obtained in the same manner as the electromagnetic wave shielding film 100 of the sixth embodiment. effect.

<第9實施形態> <Ninth Embodiment>

其次針對本發明之電磁波遮蔽用膜片之第9實施形態說明。 Next, a ninth embodiment of the electromagnetic wave shielding film of the present invention will be described.

圖11係表示本發明之電磁波遮蔽用膜片之第9實施形態之縱剖面圖。又,以下說明中為了方便說明,稱圖11中之上側為「上」、下側為「下」。 Fig. 11 is a longitudinal sectional view showing a ninth embodiment of the electromagnetic wave shielding film of the present invention. In the following description, for convenience of explanation, the upper side in FIG. 11 is referred to as "upper" and the lower side is referred to as "lower".

以下針對圖11所示之電磁波遮蔽用膜片100說明,但針對與圖7所示之電磁波遮蔽用膜片100之不同點說明,關於同樣事項則將說明省略。 The electromagnetic wave shielding film 100 shown in FIG. 11 will be described below, but the description of the electromagnetic wave shielding film 100 shown in FIG. 7 will be omitted.

圖11所示之電磁波遮蔽用膜片100中,省略形成基材層1具備之第3層12,因此基材層1,係第1層11與第2層13從頂面側起依序疊層而得之2層構成之疊層體,且絕緣層2及電磁波阻擋層3之疊層順序相反,除 此以外與圖7所示之電磁波遮蔽用膜片100為相同。 In the electromagnetic wave shielding film 100 shown in FIG. 11, the third layer 12 included in the base material layer 1 is omitted. Therefore, the base layer 1 and the first layer 11 and the second layer 13 are stacked one upon another from the top surface side. a laminate composed of two layers, and the stacking order of the insulating layer 2 and the electromagnetic wave blocking layer 3 is reversed, except Other than this, it is the same as the electromagnetic wave shielding film 100 shown in FIG.

亦即,本實施形態中,電磁波遮蔽用膜片100,係依序疊層由第1層11與第2層13構成之基材層1、電磁波阻擋層3、及絕緣層2而得之疊層體。 In the present embodiment, the electromagnetic wave shielding film 100 is formed by laminating a base layer 1, an electromagnetic wave blocking layer 3, and an insulating layer 2 composed of the first layer 11 and the second layer 13 in this order. Layer body.

此構成之電磁波遮蔽用膜片100,於剝離步驟將基材層1從電磁波阻擋層3剝離時,係於第2層13與電磁波阻擋層3間之界面將基材層1從電磁波阻擋層3剝離。如此之剝離中,電磁波阻擋層3具備與第2層13間的離型性,因而省略第3層12之形成。 In the electromagnetic wave shielding film 100 having such a configuration, when the base material layer 1 is peeled off from the electromagnetic wave blocking layer 3 in the peeling step, the base material layer 1 is removed from the electromagnetic wave blocking layer 3 at the interface between the second layer 13 and the electromagnetic wave blocking layer 3. Stripped. In such peeling, the electromagnetic wave blocking layer 3 has a release property from the second layer 13, and thus the formation of the third layer 12 is omitted.

於此情形,電磁波阻擋層3與第2層13之接觸面之離型性程度,可以用前述接觸面之表面張力表示。前述接觸面之表面張力,宜為20~40mN/m較理想,25~35mN/m更理想。藉由使前述接觸面具有此範圍內之表面張力,在使用真空加壓式層合機等之推入處理之後,能從電磁波阻擋層3將第2層13確實地剝離。 In this case, the degree of release of the contact surface between the electromagnetic wave blocking layer 3 and the second layer 13 can be expressed by the surface tension of the contact surface. The surface tension of the contact surface is preferably 20 to 40 mN/m, and more preferably 25 to 35 mN/m. By having the contact surface having the surface tension within this range, the second layer 13 can be reliably peeled off from the electromagnetic wave blocking layer 3 after the push-in process using a vacuum pressure laminator or the like.

如此之具有表面張力之電磁波阻擋層3,例如:使碳系材料或導電性高分子分散於聚胺甲酸酯等熱硬化性樹脂中而得之樹脂等。 The electromagnetic wave blocking layer 3 having such a surface tension is, for example, a resin obtained by dispersing a carbon-based material or a conductive polymer in a thermosetting resin such as polyurethane.

如此之構成之本實施形態之電磁波遮蔽用膜片100,也可與前述第6實施形態之電磁波遮蔽用膜片100同樣地使用,可獲得與前述第6實施形態之電磁波遮蔽用膜片100為同樣的效果。 The electromagnetic wave shielding film 100 of the present embodiment, which is configured in the same manner as the electromagnetic wave shielding film 100 of the sixth embodiment, can be used as the electromagnetic wave shielding film 100 of the sixth embodiment. The same effect.

<第10實施形態> <Tenth embodiment>

其次針對本發明之電磁波遮蔽用膜片之第10實施形態說明。 Next, a tenth embodiment of the electromagnetic wave shielding film of the present invention will be described.

圖12係表示本發明之電磁波遮蔽用膜片之第10實施形態之縱剖面圖。又,以下說明中為了方便說明,稱圖12中之上側為「上」、下側為「下」。 Fig. 12 is a longitudinal sectional view showing a tenth embodiment of the electromagnetic wave shielding film of the present invention. In the following description, for convenience of explanation, the upper side in FIG. 12 is referred to as "upper" and the lower side is "down".

以下針對圖12所示之電磁波遮蔽用膜片100說明,但針對與圖7所示之電磁波遮蔽用膜片100之不同點說明,關於同樣事項則將說明省略。 The electromagnetic wave shielding film 100 shown in FIG. 12 will be described below. However, the description of the electromagnetic wave shielding film 100 shown in FIG. 7 will be omitted.

圖12所示之電磁波遮蔽用膜片100中,絕緣層2及電磁波阻擋層3之疊層順序相反,除此以外與圖7所示之電磁波遮蔽用膜片100為相同。 In the electromagnetic wave shielding film 100 shown in FIG. 12, the insulating layer 2 and the electromagnetic wave blocking layer 3 are stacked in the reverse order, and the electromagnetic wave shielding film 100 shown in FIG. 7 is the same.

亦即,本實施形態中,電磁波遮蔽用膜片100,係將由第1層11、第2層13、第3層12構成之基材層1、絕緣層2、電磁波阻擋層3依序疊層而得之疊層體。藉由使用如此之已疊層之具備電磁波阻擋層3及絕緣層2之電磁波遮蔽用膜片100,來被覆基板5上之凸部61,絕緣層2會接觸基板5及電子零件4,且從基板5側起依序以絕緣層2、電磁波阻擋層3被覆電子零件4。 In the present embodiment, the electromagnetic wave shielding film 100 is formed by sequentially laminating the base layer 1, the insulating layer 2, and the electromagnetic wave blocking layer 3 composed of the first layer 11, the second layer 13, and the third layer 12. And get the laminate. By using the electromagnetic wave shielding film 100 having the electromagnetic wave blocking layer 3 and the insulating layer 2 laminated thereon, the convex portion 61 on the substrate 5 is covered, and the insulating layer 2 contacts the substrate 5 and the electronic component 4, and The electronic component 4 is covered with the insulating layer 2 and the electromagnetic wave blocking layer 3 in this order from the substrate 5 side.

如上,本實施形態中,絕緣層2係以與基板5及電子零件4接觸的狀態將此等被覆。藉此,基板5及電子零件4,會與介隔絕緣層2而位在與基板5為相反側之電磁波阻擋層3及其他構件(電子零件等)絕緣。 As described above, in the present embodiment, the insulating layer 2 is covered in a state of being in contact with the substrate 5 and the electronic component 4. Thereby, the substrate 5 and the electronic component 4 are insulated from the electromagnetic wave blocking layer 3 and other members (electronic components, etc.) which are located on the opposite side of the substrate 5 from the insulating layer 2 .

所以,此構成之電磁波遮蔽用膜片100即使例如:電磁波阻擋層3含有導電性材料,也能利用絕緣層2確實地使相鄰的電子零件4彼此絕緣。 Therefore, even if the electromagnetic wave shielding layer 3 of this configuration contains a conductive material, for example, the insulating layer 2 can surely insulate the adjacent electronic components 4 from each other.

如此之構成之本實施形態之電磁波遮蔽用膜片100,也可與前述第6實施形態之電磁波遮蔽用膜片100同樣地使用,可獲得與前述第6實施形態之電磁波遮蔽用膜片100為同樣的效果。 The electromagnetic wave shielding film 100 of the present embodiment, which is configured in the same manner as the electromagnetic wave shielding film 100 of the sixth embodiment, can be used as the electromagnetic wave shielding film 100 of the sixth embodiment. The same effect.

<第11實施形態> <11th embodiment>

其次針對本發明之電磁波遮蔽用膜片之第11實施形態說明。 Next, an eleventh embodiment of the electromagnetic wave shielding film of the present invention will be described.

圖13係表示本發明之電磁波遮蔽用膜片之第11實施形態之縱剖面圖。又,以下說明中為了方便說明,稱圖13中之上側為「上」、下側為「下」。 Fig. 13 is a longitudinal sectional view showing an eleventh embodiment of the electromagnetic wave shielding film of the present invention. In the following description, for convenience of explanation, the upper side in FIG. 13 is referred to as "upper" and the lower side is "down".

以下針對圖13所示之電磁波遮蔽用膜片100說明,但針對與圖5所示之電磁波遮蔽用膜片100之不同點說明,關於同樣事項則將說明省略。 The electromagnetic wave shielding film 100 shown in FIG. 13 will be described below, but the description of the electromagnetic wave shielding film 100 shown in FIG. 5 will be omitted.

圖13所示之電磁波遮蔽用膜片100中,絕緣層2係形成於電磁波阻擋層3與基材層1之間,除此以外與圖5所示之電磁波遮蔽用膜片100為相同。 In the electromagnetic wave shielding film 100 shown in FIG. 13, the insulating layer 2 is formed between the electromagnetic wave blocking layer 3 and the base material layer 1, and is the same as the electromagnetic wave shielding film 100 shown in FIG.

亦即,本實施形態中,電磁波遮蔽用膜片100,係將由第1層11、第2層13、第3層12構成之基材層1、絕緣層2、及由吸收層31、反射層32構成之電磁波阻擋層3,依序疊層而成疊層體。又,絕緣層2與第6實施形態之絕緣層2相同,故將其說明省略。 In the present embodiment, the electromagnetic wave shielding film 100 is composed of the first layer 11, the second layer 13, and the third layer 12, the insulating layer 2, and the absorbing layer 31 and the reflective layer. The electromagnetic wave blocking layer 3 composed of 32 is laminated in this order to form a laminate. Further, since the insulating layer 2 is the same as the insulating layer 2 of the sixth embodiment, the description thereof will be omitted.

如此之構成之本實施形態之電磁波遮蔽用膜片100,也可與前述第4實施形態之電磁波遮蔽用膜片100同樣地使用,可獲得與前述第4實施形態之電磁波遮蔽用膜片100為同樣的效果。又,本實施形態之電磁波遮蔽用膜片100具有絕緣層2,故可以與前述第6實施形態之電磁波遮蔽用膜片100同樣使用並與前述第6實施形態之電磁波遮蔽用膜片100獲得同樣效果。 The electromagnetic wave shielding film 100 of the present embodiment, which is configured as described above, can be used in the same manner as the electromagnetic wave shielding film 100 of the fourth embodiment, and the electromagnetic wave shielding film 100 of the fourth embodiment can be obtained. The same effect. Further, since the electromagnetic wave shielding film 100 of the present embodiment has the insulating layer 2, it can be used in the same manner as the electromagnetic wave shielding film 100 of the sixth embodiment, and is obtained in the same manner as the electromagnetic wave shielding film 100 of the sixth embodiment. effect.

<第12實施形態> <Twelfth Embodiment>

其次針對本發明之電磁波遮蔽用膜片之第12實施形態說明。 Next, a twelfth embodiment of the electromagnetic wave shielding film of the present invention will be described.

圖14係表示本發明之電磁波遮蔽用膜片之第12實施形態之縱剖面圖。又,以下說明中為了方便說明稱圖14中之上側為「上」、下側為「下」。 Fig. 14 is a longitudinal sectional view showing a twelfth embodiment of the electromagnetic wave shielding film of the present invention. In the following description, for convenience of explanation, the upper side in FIG. 14 is referred to as "upper" and the lower side is "down".

以下針對圖14所示之電磁波遮蔽用膜片100說明,但針對與圖6所示之電磁波遮蔽用膜片100之不同點說明,關於同樣事項則將說明省略。 The electromagnetic wave shielding film 100 shown in FIG. 14 will be described below, but the description of the electromagnetic wave shielding film 100 shown in FIG. 6 will be omitted.

圖14所示之電磁波遮蔽用膜片100中,絕緣層2係形成於電磁波阻擋層3與基材層1之間,除此以外與圖6所示之電磁波遮蔽用膜片100為相 同。 In the electromagnetic wave shielding film 100 shown in FIG. 14, the insulating layer 2 is formed between the electromagnetic wave blocking layer 3 and the base material layer 1, and is different from the electromagnetic wave shielding film 100 shown in FIG. with.

亦即,本實施形態中,電磁波遮蔽用膜片100,係將由第1層11、第2層13、第3層12構成之基材層1、絕緣層2、與由反射層32、吸收層31構成之電磁波阻擋層3依序疊層而成之疊層體。又,絕緣層2與第6實施形態之絕緣層2相同,故將其說明省略。 In the present embodiment, the electromagnetic wave shielding film 100 is composed of the first layer 11, the second layer 13, and the third layer 12, the insulating layer 2, and the reflecting layer 32 and the absorbing layer. A laminated body in which the electromagnetic wave blocking layer 3 is formed in this order. Further, since the insulating layer 2 is the same as the insulating layer 2 of the sixth embodiment, the description thereof will be omitted.

如此之構成之本實施形態之電磁波遮蔽用膜片100,也可與前述第5實施形態之電磁波遮蔽用膜片100同樣地使用,可獲得與前述第5實施形態之電磁波遮蔽用膜片100為同樣的效果。又,本實施形態之電磁波遮蔽用膜片100具有絕緣層2,故可以與前述第6實施形態之電磁波遮蔽用膜片100同樣使用並與前述第6實施形態之電磁波遮蔽用膜片100獲得同樣效果。 The electromagnetic wave shielding film 100 of the present embodiment, which is configured in the same manner as the electromagnetic wave shielding film 100 of the fifth embodiment, can be used as the electromagnetic wave shielding film 100 of the fifth embodiment. The same effect. Further, since the electromagnetic wave shielding film 100 of the present embodiment has the insulating layer 2, it can be used in the same manner as the electromagnetic wave shielding film 100 of the sixth embodiment, and is obtained in the same manner as the electromagnetic wave shielding film 100 of the sixth embodiment. effect.

又,前述第11實施形態之電磁波遮蔽用膜片100,與前述第12實施形態之電磁波遮蔽用膜片100,除了電磁波阻擋層3擁有之反射層32與吸收層31的疊層順序不同以外,彼此相同。如前述,吸收層31係藉由吸收入射於吸收層31之電磁波以阻擋電磁波,故由於此吸收,電磁波消滅。由此,前述第11實施形態之電磁波遮蔽用膜片100有以下好處:能確實防止於反射層32反射之電磁波對於未被電磁波阻擋層3被覆之其他構件等造成不利影響。所以,此等第11及第12實施形態之電磁波遮蔽用膜片100中,宜為吸收層31係位在反射層32相對於凸部61為相反側的第11實施形態之電磁波遮蔽用膜片100較佳。 Further, in the electromagnetic wave shielding film 100 of the eleventh embodiment, the electromagnetic wave shielding film 100 of the twelfth embodiment is different from the lamination order of the reflective layer 32 and the absorbing layer 31 of the electromagnetic wave blocking layer 3, Same to each other. As described above, the absorption layer 31 blocks electromagnetic waves by absorbing electromagnetic waves incident on the absorption layer 31, so that electromagnetic waves are destroyed by this absorption. Thus, the electromagnetic wave shielding film sheet 100 of the eleventh embodiment has an advantage in that electromagnetic waves reflected by the reflection layer 32 can be surely prevented from adversely affecting other members not covered by the electromagnetic wave blocking layer 3. Therefore, in the electromagnetic wave shielding film sheet 100 of the eleventh and twelfth embodiments, the electromagnetic wave shielding film according to the eleventh embodiment in which the absorption layer 31 is positioned on the opposite side of the reflection layer 32 with respect to the convex portion 61 is preferable. 100 is preferred.

又,前述第11實施形態之電磁波遮蔽用膜片100、與前述第12實施形態之電磁波遮蔽用膜片100,係電磁波阻擋層3具備反射層32與吸收層31各1層之2層構成之疊層體。但是電磁波阻擋層3不限於如此之2層構成之疊層體,也可由至少反射層32與吸收層31中任一者有2層以上之3層以上之疊層體構成。 In addition, the electromagnetic wave shielding film 100 of the eleventh embodiment and the electromagnetic wave shielding film 100 of the twelfth embodiment include the electromagnetic wave blocking layer 3 including two layers of the reflective layer 32 and the absorption layer 31. Laminate. However, the electromagnetic wave blocking layer 3 is not limited to the two-layered laminate, and may be composed of a laminate of at least two or more layers of at least one of the reflective layer 32 and the absorbing layer 31.

又,前述實施形態中,係針對在電磁波阻擋層3之頂面或底面中任一者疊層了1層絕緣層2的情形說明,但不限於此情形,也可於電磁波阻擋層3之頂面及底面兩者各疊層1層為其他層的絕緣層2。 In the above-described embodiment, the case where one insulating layer 2 is laminated on either the top surface or the bottom surface of the electromagnetic wave blocking layer 3 is described. However, the present invention is not limited to this and may be applied to the top of the electromagnetic wave blocking layer 3. One of the surface and the bottom surface is laminated with each other as the insulating layer 2 of the other layer.

以上針對本發明之電磁波遮蔽用膜片、及電子零件之被覆方法說明,但本發明不限於此等。 The above is directed to the electromagnetic wave shielding film of the present invention and the coating method of the electronic component, but the present invention is not limited thereto.

例如:本發明之電磁波遮蔽用膜片,也可組合前述第1~第12實施形態之任意之構成。 For example, the electromagnetic wave shielding film of the present invention may be combined with any of the first to twelfth embodiments.

又,也可對於本發明之電磁波遮蔽用膜片追加能發揮同樣機能的任意層。 Further, any layer which can exhibit the same function can be added to the electromagnetic wave shielding film of the present invention.

再者,也可對於本發明之電子零件之被覆方法追加1或2以上之任意步驟。 Further, any one or two or more steps may be added to the coating method of the electronic component of the present invention.

【實施例】 [Examples]

以下依據實施例對於本發明詳細說明,但本發明不限於此等實施例。 The invention is described in detail below with reference to the embodiments, but the invention is not limited to the embodiments.

1.關於電磁波遮蔽用膜片之層構成之探討 1. Discussion on the layer composition of the diaphragm for electromagnetic wave shielding

(實施例1A) (Example 1A)

<電磁波遮蔽用膜片之製造> <Manufacture of diaphragm for electromagnetic wave shielding>

為了獲得電磁波遮蔽用膜片,準備對排聚苯乙烯(出光興產(股)公司製、商品名:XAREC S107)作為構成第1層(第1離型層)之樹脂。準備對排聚苯乙烯(出光興產(股)公司製、商品名:XAREC S107),作為構成第3層(第2離型層)之樹脂。準備乙烯-甲基丙烯酸酯共聚物(住友化學(股)公司製、商品名:ACRYFT WD106),作為構成第2層(緩衝層)之樹脂。準備導電性黏著劑層(東洋紡(股)公司製、商品名:DW-260H-1),作為構成電磁波阻擋層之樹脂。 In order to obtain a film for electromagnetic wave shielding, a polystyrene (manufactured by Idemitsu Kogyo Co., Ltd., trade name: XAREC S107) was prepared as a resin constituting the first layer (first release layer). The styrene polystyrene (manufactured by Idemitsu Kosan Co., Ltd., trade name: XAREC S107) was prepared as a resin constituting the third layer (second release layer). An ethylene-methacrylate copolymer (manufactured by Sumitomo Chemical Co., Ltd., trade name: ACRYFT WD106) was prepared as a resin constituting the second layer (buffer layer). A conductive adhesive layer (manufactured by Toyobo Co., Ltd., trade name: DW-260H-1) was prepared as a resin constituting the electromagnetic wave blocking layer.

將作為第1層之前述對排聚苯乙烯、與作為第3層之前述對排聚苯乙烯、作為第2層之前述乙烯-甲基丙烯酸酯共聚物,使用進料組體(feed block)及多歧管模進行共擠製予以膜化。將作為電磁波阻擋層之前述導電性黏著劑層塗覆於基材層,製成電磁波遮蔽用膜片。 A feed block is used as the above-mentioned aligned polystyrene of the first layer, the above-mentioned aligned polystyrene as the third layer, and the ethylene-methacrylate copolymer as the second layer. The multi-manifold mold is coextruded to form a film. The conductive adhesive layer as the electromagnetic wave blocking layer is applied to the base material layer to form a diaphragm for electromagnetic wave shielding.

實施例1A之電磁波遮蔽用膜片之全體之厚度為140μm,第1層之厚度為30μm、第3層之厚度為30μm、第2層之厚度為60μm、電磁波阻擋層之厚度為20μm。 The thickness of the entire electromagnetic wave shielding film of Example 1A was 140 μm, the thickness of the first layer was 30 μm, the thickness of the third layer was 30 μm, the thickness of the second layer was 60 μm, and the thickness of the electromagnetic wave blocking layer was 20 μm.

又,測定實施例1A之電磁波遮蔽用膜片之第1層、第2層及第3層之平均線膨脹係數,結果各為420、2400及420ppm/℃。 Further, the average linear expansion coefficients of the first layer, the second layer, and the third layer of the electromagnetic wave shielding film of Example 1A were measured, and as a result, each was 420, 2400, and 420 ppm/°C.

再者,測定基材層及電磁波阻擋層於150℃之貯藏彈性係數,結果各為1.8E+07Pa、1.2E+07Pa。 Further, the storage elastic modulus of the base material layer and the electromagnetic wave blocking layer at 150 ° C was measured, and as a result, they were each 1.8 E + 07 Pa and 1.2 E + 07 Pa.

<電子零件之製造> <Manufacture of electronic parts>

將獲得之電磁波遮蔽用膜片,以溫度150度、壓力2.0MPa之條件,以5分鐘、真空壓空成形法,貼附在個人電腦用記憶體基板(Samsung(股)公司製、商品名:DDR2 667 M470T6554EZ3-CE6 PC2-5300)(高低差1,000μm)之表面。貼附後,以手工作業僅將基材層從電磁波阻擋層剝離,製造電子零件。 The electromagnetic wave shielding film obtained was attached to a memory substrate for a personal computer (manufactured by Samsung Co., Ltd. under the conditions of a temperature of 150 degrees and a pressure of 2.0 MPa in a vacuum pressure forming method for 5 minutes). DDR2 667 M470T6554EZ3-CE6 PC2-5300) (high and low difference of 1,000μm) surface. After the attachment, the substrate layer was peeled off from the electromagnetic wave blocking layer by hand to produce an electronic component.

(實施例2A) (Example 2A)

設定第1層之厚度為80μm,除此以外與實施例1A同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1A except that the thickness of the first layer was changed to 80 μm.

(實施例3A) (Example 3A)

設定第1層之厚度為10μm,除此以外與實施例1A同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1A except that the thickness of the first layer was set to 10 μm.

(實施例4A) (Example 4A)

設定第2層之厚度為90μm,除此以外與實施例1A同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1A except that the thickness of the second layer was changed to 90 μm.

(實施例5A) (Example 5A)

設定第2層之厚度為20μm,除此以外與實施例1A同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1A except that the thickness of the second layer was set to 20 μm.

(實施例6A) (Example 6A)

設定第3層之厚度為10μm,除此以外與實施例1A同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1A except that the thickness of the third layer was set to 10 μm.

(實施例7A) (Example 7A)

設定第3層之厚度為90μm,除此以外與實施例1A同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1A except that the thickness of the third layer was changed to 90 μm.

(實施例8A) (Example 8A)

設定電磁波阻擋層之厚度為5μm,除此以外與實施例1A同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1A except that the thickness of the electromagnetic wave blocking layer was set to 5 μm.

(實施例9A) (Example 9A)

設定電磁波阻擋層之厚度為150μm,除此以外與實施例1A同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1A except that the thickness of the electromagnetic wave blocking layer was changed to 150 μm.

(實施例10A) (Example 10A)

作為第1層,準備將對排聚苯乙烯(出光興產(股)公司製、商品名:XAREC S107)與苯乙烯-乙烯-丁烯-苯乙烯嵌段共聚物(可樂麗(股)公司製、商品名:SEPTON S8007)各以重量百分比濃度60wt%、40wt%摻合之摻合品,除此以外與實施例1A同樣地製造電磁波遮蔽用膜片與電子零件。 As the first layer, we prepare a pair of polystyrene (made by Idemitsu Kosan Co., Ltd., trade name: XAREC S107) and a styrene-ethylene-butylene-styrene block copolymer (Kuraray Co., Ltd.) In the same manner as in Example 1A, a film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1A, except that the blended product was blended at a weight percentage of 60% by weight and 40% by weight.

(實施例11A) (Example 11A)

作為第1層,準備將對排聚苯乙烯(出光興產(股)公司製、商品名:XAREC S107)與苯乙烯-乙烯-丁烯-苯乙烯嵌段共聚物(可樂麗(股)公司製、商品名:SEPTON S8007)各以重量百分比濃度80wt%、20wt%摻合而得之摻合品,除此以外與實施例1A同樣地製造電磁波遮蔽用膜片與電子零件。 As the first layer, we prepare a pair of polystyrene (made by Idemitsu Kosan Co., Ltd., trade name: XAREC S107) and a styrene-ethylene-butylene-styrene block copolymer (Kuraray Co., Ltd.) In the same manner as in Example 1A, a film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1A except that the blended product was obtained by blending 80% by weight and 20% by weight.

(實施例12A) (Example 12A)

作為第1層,準備聚甲基戊烯(三井化學(股)公司製、商品名:TPX MX004),除此以外與實施例1A同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1A except that polymethylpentene (manufactured by Mitsui Chemicals, Inc., trade name: TPX MX004) was prepared as the first layer.

(實施例13A) (Example 13A)

作為第1層,準備聚對苯二甲酸丁二醇酯(三菱工程塑膠(股)公司製、商品名:NOVADURAN 5505S),除此以外與實施例1A同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1A except that polybutylene terephthalate (manufactured by Mitsubishi Engineering Plastics Co., Ltd., trade name: NOVADURAN 5505S) was prepared as the first layer. .

(實施例14A) (Example 14A)

作為第2層,準備將乙烯-甲基丙烯酸酯共聚物(住友化學(股)公司製、商品名:ACRYFT WD106)與聚丙烯(住友化學(股)公司製、商品名:NOBRENE FS2011DG2)各以重量百分比濃度70wt%、30wt%摻合而得之摻合品,除此以外與實施例1A同樣地製造電磁波遮蔽用膜片與電子零件。 As the second layer, an ethylene-methacrylate copolymer (manufactured by Sumitomo Chemical Co., Ltd., trade name: ACRYFT WD106) and polypropylene (manufactured by Sumitomo Chemical Co., Ltd., trade name: NOBRENE FS2011DG2) were prepared. A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1A except that the blended product was blended in an amount of 70% by weight and 30% by weight.

(實施例15A) (Example 15A)

作為第2層,準備將乙烯-甲基丙烯酸酯共聚物(住友化學(股)公司製、商品名:ACRYFT WD106)與聚乙烯(宇部興產(股)公司製、商品名:UBE聚乙烯F222NH)各以重量百分比濃度70wt%、30wt%摻合而得之摻合品,除此以外與實施例1A同樣地製造電磁波遮蔽用膜片與電子零件。 As the second layer, an ethylene-methacrylate copolymer (manufactured by Sumitomo Chemical Co., Ltd., trade name: ACRYFT WD106) and polyethylene (manufactured by Ube Industries, Ltd., trade name: UBE polyethylene F222NH) were prepared. A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1A except that the blended product was blended in an amount of 70% by weight and 30% by weight.

(實施例16A) (Example 16A)

作為第2層,準備將乙烯-甲基丙烯酸酯共聚物(住友化學(股)公司製、 商品名:ACRYFT WD106)與聚乙烯(宇部興產(股)公司製、商品名:UBE聚乙烯F222NH)與聚丙烯(住友化學(股)公司製、商品名:NOBRENE FS2011DG2)各以重量百分比濃度60wt%、20wt%、20wt%摻合而得之摻合品,除此以外與實施例1A同樣地製造電磁波遮蔽用膜片與電子零件。 As the second layer, an ethylene-methacrylate copolymer (manufactured by Sumitomo Chemical Co., Ltd.) was prepared. Product name: ACRYFT WD106) and polyethylene (made by Ube Industries Co., Ltd., trade name: UBE polyethylene F222NH) and polypropylene (Sumitomo Chemical Co., Ltd., trade name: NOBRENE FS2011DG2) A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1A except that the blended product was blended in an amount of 60% by weight, 20% by weight, and 20% by weight.

(實施例17A) (Example 17A)

設定第1層之厚度為5μm,除此以外與實施例1A同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1A except that the thickness of the first layer was set to 5 μm.

(實施例18A) (Example 18A)

設定第2層之厚度為120μm,除此以外與實施例1A同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1A except that the thickness of the second layer was set to 120 μm.

(實施例19A) (Example 19A)

設定第3層之厚度為3μm,除此以外與實施例1A同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1A except that the thickness of the third layer was set to 3 μm.

(實施例20A) (Example 20A)

設定第2層之厚度為80μm、第1層之厚度為10μm,除此以外與實施例1A同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1A except that the thickness of the second layer was 80 μm and the thickness of the first layer was 10 μm.

(實施例21A) (Example 21A)

設定第1層之厚度為5μm、第2層之厚度為80μm、第3層之厚度為5μm,除此以外與實施例1A同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1A except that the thickness of the first layer was 5 μm, the thickness of the second layer was 80 μm, and the thickness of the third layer was 5 μm.

(實施例22A) (Example 22A)

省略第1層之形成,並且於電磁波阻擋層使用導電性高分子聚苯胺分散液(REGULUS公司製PANI-PD),除此以外與實施例1A同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1A except that the formation of the first layer was omitted, and the conductive polymer polyaniline dispersion (PANI-PD manufactured by REGULUS Co., Ltd.) was used as the electromagnetic wave barrier layer.

(實施例23A) (Example 23A)

省略第3層之形成,除此以外與實施例1A同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1A except that the formation of the third layer was omitted.

(比較例1A) (Comparative Example 1A)

作為基材層,僅準備聚對苯二甲酸乙二醇酯(東麗(股)公司製、商品名:LUMIRROR S10),並設定基材層之厚度為30μm,除此以外與實施例1A同樣地製造電磁波遮蔽用膜片與電子零件。 In the same manner as in Example 1A, except that polyethylene terephthalate (manufactured by Toray Industries, Inc., trade name: LUMIRROR S10) was prepared as the base material layer, and the thickness of the base material layer was set to 30 μm. A diaphragm for electromagnetic wave shielding and an electronic component are manufactured.

(比較例2A) (Comparative Example 2A)

作為基材層,僅準備聚對苯二甲酸乙二醇酯(東麗(股)公司製、商品名:LUMIRROR S10),並設定基材層之厚度為100μm,除此以外與實施例1A同樣地製造電磁波遮蔽用膜片與電子零件。 In the same manner as in Example 1A, except that polyethylene terephthalate (manufactured by Toray Industries, Inc., trade name: LUMIRROR S10) was prepared as the base material layer, and the thickness of the base material layer was set to 100 μm. A diaphragm for electromagnetic wave shielding and an electronic component are manufactured.

<評價試驗> <evaluation test>

針對實施例1A~23A、及比較例1A、2A製作之電磁波遮蔽用膜片、或電子零件,評價形狀追隨性、離型性、耐折疊性、基材層之第2層滲出性、耐熱性、電磁波遮蔽之裁切.衝壓作業性。以下針對該等評價方法說明。 The electromagnetic wave shielding film or electronic component produced in Examples 1A to 23A and Comparative Examples 1A and 2A was evaluated for shape followability, release property, folding resistance, second layer exudation property of substrate layer, and heat resistance. , the cutting of electromagnetic wave shielding. Stamping workability. The following describes the evaluation methods.

<<形狀追隨性>> <<Shape followability>>

前述形狀追隨性可如以下方式求取。 The aforementioned shape followability can be obtained as follows.

於縱100mm×橫100mm×高度3mm之印刷電路板(主機板),以0.2mm間隔以棋盤格狀形成寬0.2mm、既定高低差(深度)之溝。之後,使用真空壓空成形裝置將電磁波遮蔽用膜片以150℃×1MPa×10分鐘的條件壓接於印刷電路板,並貼附於印刷電路板。貼附後,將基材層從電磁波阻擋層剝離。然後判斷貼附於印刷電路板之電磁波阻擋層與印刷電路板上之溝之間是否有空隙。又,是否有空隙,係以顯微鏡(microscope)或顯微鏡觀察並評價。 A printed circuit board (main board) having a length of 100 mm × a width of 100 mm and a height of 3 mm was formed into a groove having a width of 0.2 mm and a predetermined height difference (depth) in a checkerboard pattern at intervals of 0.2 mm. Thereafter, the electromagnetic wave shielding film was pressure-bonded to the printed circuit board under the conditions of 150 ° C × 1 MPa × 10 minutes using a vacuum pressure forming device, and attached to the printed circuit board. After the attachment, the substrate layer is peeled off from the electromagnetic wave barrier layer. Then, it is judged whether there is a gap between the electromagnetic wave blocking layer attached to the printed circuit board and the groove on the printed circuit board. Further, whether or not there is a void is observed and evaluated by a microscope or a microscope.

各符號如下。×評為不合格,其他評為合格。 The symbols are as follows. × rated as unqualified, others rated as qualified.

×:高低差小於500μm。 ×: The height difference is less than 500 μm.

○:高低差為500μm以上、小於1000μm。 ○: The height difference is 500 μm or more and less than 1000 μm.

◎:高低差為1000μm以上、小於2000μm。 ◎: The height difference is 1000 μm or more and less than 2000 μm.

◎◎:高低差為2000μm以上。 ◎ ◎: The height difference is 2000 μm or more.

<<離型性>> <<release type>>

前述離型性,可依如下方式求得。 The above-mentioned release property can be obtained as follows.

將電磁波遮蔽用膜片熱壓接於與上述形狀追隨性之評價方法為同樣之印刷電路板。之後,以利用手工作業僅將基材層從電磁波阻擋層剝離時之剝離容易度實施評價。 The electromagnetic wave shielding film was thermocompression bonded to a printed circuit board similar to the above-described method for evaluating the shape followability. Thereafter, the ease of peeling when the base material layer was peeled off from the electromagnetic wave blocking layer by hand work was evaluated.

各符號如下。×評為不合格,其他評為合格。 The symbols are as follows. × rated as unqualified, others rated as qualified.

×:基材層有樹脂殘留。 ×: The base material layer has a resin residue.

○:基材層沒有樹脂殘留,但是基材層之剝離稍許沉重。 ○: There was no resin remaining in the substrate layer, but the peeling of the substrate layer was slightly heavy.

◎:基材層沒有樹脂殘留,能輕易地剝離基材層。 ◎: The base material layer has no resin residue, and the base material layer can be easily peeled off.

<<耐折疊性>> <<Folding resistance>>

前述耐折疊性,可利用以下方式求取。 The aforementioned folding resistance can be obtained by the following method.

將電磁波遮蔽用膜片貼合在有彎曲性的基板,例如:可撓性電路基板等。將已貼合者折疊,以顯微鏡觀察其彎折處。惟彎折係以手進行,僅彎折1次。 The electromagnetic wave shielding film is bonded to a flexible substrate, for example, a flexible circuit board. The fitted person was folded and the bend was observed under a microscope. However, the bending is performed by hand and is bent only once.

各符號如下。×評為不合格,其他評為合格。 The symbols are as follows. × rated as unqualified, others rated as qualified.

×:彎折部發生了裂痕。 ×: A crack occurred in the bent portion.

○:彎折部有若干的皺紋。 ○: There are some wrinkles in the bent portion.

◎:彎折部未發生裂痕。 ◎: No cracks occurred in the bent portion.

<<第2層滲出性>> <<Second layer exudation>>

前述基材層之第2層滲出性,可利用以下方式求取。 The second layer bleed property of the base material layer can be obtained by the following method.

將基材層以150℃×2.0MPa×5分鐘的條件熱壓製。以游標卡尺等測定滲出的第2層之構成材料距第2層之端部的最大距離。 The base material layer was hot pressed at 150 ° C × 2.0 MPa × 5 minutes. The maximum distance of the constituent material of the second layer which is exuded from the end of the second layer is measured by a vernier caliper or the like.

各符號如下。×評為不合格,其他評為合格。 The symbols are as follows. × rated as unqualified, others rated as qualified.

×:最大距離1.0mm以上 ×: The maximum distance is 1.0 mm or more

○:最大距離0.5mm以上、小於1.0mm ○: The maximum distance is 0.5 mm or more and less than 1.0 mm.

◎:最大距離小於0.5mm ◎: The maximum distance is less than 0.5mm

<<耐熱性>> <<Heat resistance>>

前述基材層之耐熱性可利用以下方式求取。 The heat resistance of the base material layer can be determined by the following method.

與前述形狀追隨性之評價方法同樣地,使用真空壓空成形裝置,以150℃×2MPa×5分鐘的條件,將電磁波遮蔽用膜片熱壓接於印刷電路板,並貼附於印刷電路板。貼附後,將基材層從電磁波阻擋層剝離。然後,以目視觀察貼附在印刷電路板的電磁波阻擋層是否有皺紋。 In the same manner as the evaluation method of the shape followability, the electromagnetic wave shielding film was thermocompression bonded to a printed circuit board and attached to a printed circuit board under the conditions of 150 ° C × 2 MPa × 5 minutes using a vacuum pressure forming apparatus. . After the attachment, the substrate layer is peeled off from the electromagnetic wave barrier layer. Then, it was visually observed whether or not the electromagnetic wave blocking layer attached to the printed circuit board was wrinkled.

各符號如下。×評為不合格,其他評為合格。 The symbols are as follows. × rated as unqualified, others rated as qualified.

×:電磁波阻擋層出現皺紋。 ×: Wrinkles appear in the electromagnetic wave blocking layer.

○:電磁波阻擋層處現微細的皺紋。 ○: Fine wrinkles are present at the electromagnetic wave barrier layer.

◎:電磁波阻擋層未出現皺紋。 ◎: No wrinkles were observed in the electromagnetic wave blocking layer.

<<裁切.衝壓作業性>> <<Cutting. Stamping workability >>

前述電磁波遮蔽之裁切.衝壓作業性,可利用以下方式求取。 The cutting of the aforementioned electromagnetic wave shielding. The punching workability can be obtained by the following methods.

以將電磁波遮蔽用膜片裁切、衝壓為既定尺寸及形狀時是否須要多數步驟且顯著作業性下降來進行判斷。 When the diaphragm for shielding an electromagnetic wave is cut and punched into a predetermined size and shape, it is judged whether a large number of steps are required and the workability is lowered.

各符號如下。×評為不合格,其他評為合格。 The symbols are as follows. × rated as unqualified, others rated as qualified.

×:作業性顯著下降。 ×: Workability was significantly lowered.

○:作業性有若干下降。 ○: There is a certain decrease in workability.

◎:作業性無間題。 ◎: Workability is no problem.

以上之各實施例、比較例之評價結果如表1所示。 The evaluation results of the above respective examples and comparative examples are shown in Table 1.

如表1可明白:實施例1A~23A之電磁波遮蔽用膜片,顯示良好的形狀追隨性,而關於離型性、耐折疊性、基材層之第2層滲出性、電磁波遮蔽之裁切.衝壓作業性均為均衡性良好且優良。相對於此,比較例1A、2A之電磁波遮蔽用膜片,比起實施例1A~23A之電磁波遮蔽用膜片,係形狀追隨性未充分令人滿意的結果。 As can be seen from Table 1, the electromagnetic wave shielding films of Examples 1A to 23A exhibited good shape followability, and the release property, the folding resistance, the second layer exudation property of the base material layer, and the electromagnetic wave shielding were cut. . The stamping workability is good and excellent in balance. On the other hand, in the electromagnetic wave shielding films of Comparative Examples 1A and 2A, the shape followability was not sufficiently satisfactory as compared with the electromagnetic wave shielding films of Examples 1A to 23A.

2.關於基材層之貯藏彈性係數之探討 2. Discussion on the storage elastic coefficient of the substrate layer

(實施例1B) (Example 1B)

<電磁波遮蔽用膜片之製造> <Manufacture of diaphragm for electromagnetic wave shielding>

為了獲得電磁波遮蔽用膜片,準備對排聚苯乙烯(出光興產(股)公司製、商品名:XAREC S107)作為構成第1層(第1離型層)之樹脂。準備對排聚苯乙烯(出光興產(股)公司製、商品名:XAREC S107),作為構成第3層(第2離型層)之樹脂。準備乙烯-甲基丙烯酸酯共聚物(住友化學(股)公司製、商品名:ACRYFT WD106),作為構成第2層(緩衝層)之樹脂。準備導電性黏著劑層(東洋紡(股)公司製、商品名:DW-260H-1),作為構成電磁波阻擋層之樹脂。 In order to obtain a film for electromagnetic wave shielding, a polystyrene (manufactured by Idemitsu Kogyo Co., Ltd., trade name: XAREC S107) was prepared as a resin constituting the first layer (first release layer). The styrene polystyrene (manufactured by Idemitsu Kosan Co., Ltd., trade name: XAREC S107) was prepared as a resin constituting the third layer (second release layer). An ethylene-methacrylate copolymer (manufactured by Sumitomo Chemical Co., Ltd., trade name: ACRYFT WD106) was prepared as a resin constituting the second layer (buffer layer). A conductive adhesive layer (manufactured by Toyobo Co., Ltd., trade name: DW-260H-1) was prepared as a resin constituting the electromagnetic wave blocking layer.

將作為第1層前述對排聚苯乙烯、作為第3層之前述對排聚苯乙烯、與作為第2層之前述乙烯-甲基丙烯酸酯共聚物,使用進料組體及多歧管模進行共擠製以膜化。將作為電磁波阻擋層之前述導電性黏著劑層塗覆於基材層,製成電磁波遮蔽用膜片。 The feed layer and the multi-manifold mold are used as the first layer of the above-mentioned aligned polystyrene, the above-mentioned aligned polystyrene as the third layer, and the ethylene-methacrylate copolymer as the second layer. Co-extrusion is carried out to form a film. The conductive adhesive layer as the electromagnetic wave blocking layer is applied to the base material layer to form a diaphragm for electromagnetic wave shielding.

實施例1B之電磁波遮蔽用膜片之全體之厚度為140μm,第1層之厚度為30μm、第3層之厚度為30μm、第2層之厚度為60μm、電磁波阻擋層之厚度為20μm。 The thickness of the entire electromagnetic wave shielding film of Example 1B was 140 μm, the thickness of the first layer was 30 μm, the thickness of the third layer was 30 μm, the thickness of the second layer was 60 μm, and the thickness of the electromagnetic wave blocking layer was 20 μm.

又,測定實施例1B之電磁波遮蔽用膜片之第1層、第2層及第3層之平均線膨脹係數,結果各為420、2400及420ppm/℃。 Further, the average linear expansion coefficients of the first layer, the second layer, and the third layer of the electromagnetic wave shielding film of Example 1B were measured, and as a result, each was 420, 2400, and 420 ppm/°C.

再者,測定基材層及電磁波阻擋層於150℃之貯藏彈性係數,結果各為1.8E+07Pa、1.2E+07Pa。 Further, the storage elastic modulus of the base material layer and the electromagnetic wave blocking layer at 150 ° C was measured, and as a result, they were each 1.8 E + 07 Pa and 1.2 E + 07 Pa.

<電子零件之製造> <Manufacture of electronic parts>

將獲得之電磁波遮蔽用膜片,以溫度150℃、壓力2.0MPa之條件,進行5分鐘真空壓空成形法,貼附在個人電腦用記憶體基板(Samsung(股)公司製、商品名:DDR2 667 M470T6554EZ3-CE6 PC2-5300)(高低差1,000μm)之表面。貼附後,以手工作業僅將基材層從電磁波阻擋層剝離,製成電子零件。 The obtained electromagnetic wave shielding film was subjected to a vacuum pressure forming method for 5 minutes under the conditions of a temperature of 150 ° C and a pressure of 2.0 MPa, and was attached to a memory substrate for a personal computer (manufactured by Samsung Co., Ltd., trade name: DDR2). 667 M470T6554EZ3-CE6 PC2-5300) (high and low difference of 1,000μm) surface. After the attachment, the substrate layer was peeled off from the electromagnetic wave blocking layer by hand to form an electronic component.

(實施例2B) (Example 2B)

作為第2層,準備將乙烯-甲基丙烯酸酯共聚物(住友化學(股)公司製、商品名:ACRYFT WD106)與聚丙烯(住友化學(股)公司製、商品名:NOBRENE FS2011DG2)各以重量百分比濃度70wt%、30wt%摻合而得之摻合品,除此以外與實施例1B同樣地製造電磁波遮蔽用膜片與電子零件。 As the second layer, an ethylene-methacrylate copolymer (manufactured by Sumitomo Chemical Co., Ltd., trade name: ACRYFT WD106) and polypropylene (manufactured by Sumitomo Chemical Co., Ltd., trade name: NOBRENE FS2011DG2) were prepared. A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1B except that the blended product was blended in an amount of 70% by weight and 30% by weight.

(實施例3B) (Example 3B)

設定第1層之厚度為10μm,除此以外與實施例1B同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1B except that the thickness of the first layer was set to 10 μm.

(實施例4B) (Example 4B)

設定第2層之厚度為90μm,除此以外與實施例1B同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1B except that the thickness of the second layer was changed to 90 μm.

(實施例5B) (Example 5B)

作為第1層,準備將對排聚苯乙烯(出光興產(股)公司製、商品名:XAREC S107)與苯乙烯-乙烯-丁烯-苯乙烯嵌段共聚物(可樂麗(股)公司製、商品名:SEPTON S8007)各以重量百分比濃度60wt%、40wt%摻合而得之摻合品,除此以外與實施例1B同樣地製造電磁波遮蔽用膜片與電子零件。 As the first layer, we prepare a pair of polystyrene (made by Idemitsu Kosan Co., Ltd., trade name: XAREC S107) and a styrene-ethylene-butylene-styrene block copolymer (Kuraray Co., Ltd.) In the same manner as in Example 1B, a film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1B, except that the blended product was obtained by blending a product having a weight percentage of 60% by weight and 40% by weight.

(實施例6B) (Example 6B)

設定第1層之厚度為80μm,除此以外與實施例1B同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1B except that the thickness of the first layer was set to 80 μm.

(實施例7B) (Example 7B)

設定第1層之厚度為100μm,除此以外與實施例1B同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1B except that the thickness of the first layer was set to 100 μm.

(實施例8B) (Example 8B)

作為第1層,準備將對排聚苯乙烯(出光興產(股)公司製、商品名:XAREC S107)與聚丙烯(住友化學(股)公司製、商品名:NOBRENE FS2011DG2)各以重量百分比濃度60wt%、40wt%摻合之摻合品,除此以外與實施例1B同樣地製造電磁波遮蔽用膜片與電子零件。 As a first layer, we prepare a pair of polystyrene (manufactured by Idemitsu Kogyo Co., Ltd., trade name: XAREC S107) and polypropylene (manufactured by Sumitomo Chemical Co., Ltd., trade name: NOBRENE FS2011DG2) in weight% A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1B except that the blended product was blended at a concentration of 60% by weight and 40% by weight.

(實施例9B) (Example 9B)

作為第2層,準備聚丙烯(住友化學(股)公司製、商品名:NOBRENE FS2011DG2),除此以外與實施例1B同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1B except that polypropylene (manufactured by Sumitomo Chemical Co., Ltd., trade name: NOBRENE FS2011 DG2) was prepared as the second layer.

(實施例10B) (Example 10B)

作為第1層,準備聚對苯二甲酸丁二醇酯(三菱工程塑膠(股)公司製、商品名:NOVADURAN 5020),除此以外與實施例1B同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and electronic parts were produced in the same manner as in Example 1B except that polybutylene terephthalate (manufactured by Mitsubishi Engineering Plastics Co., Ltd., trade name: NOVADURAN 5020) was prepared as the first layer. .

(實施例11B) (Example 11B)

作為第1層,準備6-尼龍(宇部興產(股)公司製、商品名:UBE尼龍1022B),除此以外與實施例1B同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1B except that 6-nylon (manufactured by Ube Industries, Ltd., trade name: UBE Nylon 1022B) was prepared as the first layer.

(比較例1B) (Comparative Example 1B)

作為基材層,準備環狀烯烴系共聚物(POLYPLASTICS(股)公司製、商 品名:TOPAS6017),除此以外與實施例1B同樣地製造電磁波遮蔽用膜片與電子零件。 As a base material layer, a cyclic olefin-based copolymer (manufactured by POLYPLASTICS Co., Ltd.) was prepared. A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1B except for the product name: TOPAS 6017.

(比較例2B) (Comparative Example 2B)

設定第3層之厚度為1μm、第1層之厚度為1μm,除此以外與實施例1B同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1B except that the thickness of the third layer was 1 μm and the thickness of the first layer was 1 μm.

<評價試驗> <evaluation test>

針對實施例1B~11B、及比較例1B、2B製作之電磁波遮蔽用膜片、或電子零件,也與針對實施例1A~23A、及比較例1A、2A製作之電磁波遮蔽用膜片、或電子零件實施者同樣進行,實施形狀追隨性、離型性、耐折疊性、基材層之第2層滲出性、耐熱性、電磁波遮蔽之裁切.衝壓作業性之評價。 The electromagnetic wave shielding film or the electronic component produced in each of Examples 1B to 11B and Comparative Examples 1B and 2B, and the electromagnetic wave shielding film or the electrons produced in Examples 1A to 23A and Comparative Examples 1A and 2A. The part implementer also performs the shape followability, the release property, the folding resistance, the second layer exudation property of the base material layer, the heat resistance, and the cutting of the electromagnetic wave shielding. Evaluation of stamping workability.

以上之各實施例、比較例之評價結果如表2所示。 The evaluation results of the above respective examples and comparative examples are shown in Table 2.

如表2可明白:實施例1B~11B之電磁波遮蔽用膜片,由於將基材層於150℃之貯藏彈性係數設定在適當範圍內,顯示良好的形狀追隨性。再者,關於離型性、耐折疊性、基材層之第2層滲出性、電磁波遮蔽之裁切.衝壓作業性,也係均衡性良好,為優良結果。 As can be seen from Table 2, in the electromagnetic wave shielding film sheets of Examples 1B to 11B, since the storage elastic modulus of the base material layer at 150 ° C was set within an appropriate range, good shape followability was exhibited. Furthermore, regarding the release property, the folding resistance, the second layer exudation of the substrate layer, and the cutting of the electromagnetic wave shielding. The punching workability is also good in balance, which is an excellent result.

相對於此,比較例1B、2B之電磁波遮蔽用膜片,未將基材層於150℃之貯藏彈性係數設定為適當範圍內,形狀追隨性不充分令人滿意。 On the other hand, in the electromagnetic wave shielding film sheets of Comparative Examples 1B and 2B, the storage elastic modulus of the base material layer at 150 ° C was not set to an appropriate range, and the shape followability was insufficient.

3.關於阻擋層之層構成及貯藏彈性係數之探討 3. Discussion on the layer composition of the barrier layer and the storage elastic coefficient

(實施例1C) (Example 1C)

<電磁波遮蔽用膜片之製造> <Manufacture of diaphragm for electromagnetic wave shielding>

為了獲得電磁波遮蔽用膜片,準備對排聚苯乙烯(出光興產(股)公司製、商品名:XAREC S107)作為構成第1層(第1離型層)之樹脂。準備對排聚苯乙烯(出光興產(股)公司製、商品名:XAREC S107),作為構成第3層(第2離型層)之樹脂。準備乙烯-甲基丙烯酸酯共聚物(住友化學(股)公司製、商品名:ACRYFT WD106),作為構成第2層(緩衝層)之樹脂。準備導電性黏著劑層(東洋紡(股)公司製、商品名:DW-260H-1),作為構成電磁波阻擋層之樹脂。 In order to obtain a film for electromagnetic wave shielding, a polystyrene (manufactured by Idemitsu Kogyo Co., Ltd., trade name: XAREC S107) was prepared as a resin constituting the first layer (first release layer). The styrene polystyrene (manufactured by Idemitsu Kosan Co., Ltd., trade name: XAREC S107) was prepared as a resin constituting the third layer (second release layer). An ethylene-methacrylate copolymer (manufactured by Sumitomo Chemical Co., Ltd., trade name: ACRYFT WD106) was prepared as a resin constituting the second layer (buffer layer). A conductive adhesive layer (manufactured by Toyobo Co., Ltd., trade name: DW-260H-1) was prepared as a resin constituting the electromagnetic wave blocking layer.

將作為第1層之前述對排聚苯乙烯、作為第3層之前述對排聚苯乙烯、與作為第2層之前述乙烯-甲基丙烯酸酯共聚物,利用使用進料組體及多歧管模之共擠製予以膜化。將作為電磁波阻擋層之前述導電性黏著劑層塗覆於基材層,製成電磁波遮蔽用膜片。 Using the above-mentioned aligned polystyrene as the first layer, the above-mentioned aligned polystyrene as the third layer, and the ethylene-methacrylate copolymer as the second layer, using the feed group and the multi-distribution The co-extrusion of the tube mold is filmed. The conductive adhesive layer as the electromagnetic wave blocking layer is applied to the base material layer to form a diaphragm for electromagnetic wave shielding.

實施例1C之電磁波遮蔽用膜片之全體之厚度為140μm,第1層之厚度為30μm、第3層之厚度為30μm、第2層之厚度為60μm、電磁波阻擋層之厚度為20μm。 The thickness of the entire electromagnetic wave shielding film of Example 1C was 140 μm, the thickness of the first layer was 30 μm, the thickness of the third layer was 30 μm, the thickness of the second layer was 60 μm, and the thickness of the electromagnetic wave blocking layer was 20 μm.

又,測定實施例1C之電磁波遮蔽用膜片之第1層、第2層及第3層之 平均線膨脹係數,結果各為420、2400及420。 Further, the first layer, the second layer, and the third layer of the electromagnetic wave shielding film of Example 1C were measured. The average linear expansion coefficient is 420, 2400, and 420 each.

再者,測定基材層及電磁波阻擋層於150℃之貯藏彈性係數,結果各為1.8E+07Pa、1.2E+07Pa。 Further, the storage elastic modulus of the base material layer and the electromagnetic wave blocking layer at 150 ° C was measured, and as a result, they were each 1.8 E + 07 Pa and 1.2 E + 07 Pa.

<電子零件之製造> <Manufacture of electronic parts>

將獲得之電磁波遮蔽用膜片,以溫度150度、壓力2.0MPa之條件,以5分鐘、真空壓空成形法,貼附在個人電腦用記憶體基板(Samsung(股)公司製、商品名:DDR2 667 M470T6554EZ3-CE6 PC2-5300)(高低差1,000μm)之表面。貼附後,以手工作業僅將基材層從電磁波阻擋層剝離,製造電子零件。 The electromagnetic wave shielding film obtained was attached to a memory substrate for a personal computer (manufactured by Samsung Co., Ltd. under the conditions of a temperature of 150 degrees and a pressure of 2.0 MPa in a vacuum pressure forming method for 5 minutes). DDR2 667 M470T6554EZ3-CE6 PC2-5300) (high and low difference of 1,000μm) surface. After the attachment, the substrate layer was peeled off from the electromagnetic wave blocking layer by hand to produce an electronic component.

(實施例2C) (Example 2C)

將導電性黏著劑層(東洋紡(股)公司製、商品名:DW-250H-5)作為電磁波阻擋層,除此以外與實施例1C同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1C except that the conductive adhesive layer (manufactured by Toyobo Co., Ltd., trade name: DW-250H-5) was used as the electromagnetic wave blocking layer.

(實施例3C) (Example 3C)

將導電性黏著劑層(東洋紡(股)公司製、商品名:DW-250H-23)作為電磁波阻擋層,除此以外與實施例1C同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1C except that the conductive adhesive layer (manufactured by Toyobo Co., Ltd., trade name: DW-250H-23) was used as the electromagnetic wave blocking layer.

(實施例4C) (Example 4C)

將導電性黏著劑層(大研化學工業(股)公司製、商品名:CA-2503-4B)作為電磁波阻擋層,除此以外與實施例1C同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1C except that the conductive adhesive layer (manufactured by Daikin Chemical Co., Ltd., trade name: CA-2503-4B) was used as the electromagnetic wave blocking layer.

(實施例5C) (Example 5C)

作為構成阻擋層之樹脂,準備聚苯胺分散液用於作為吸收層之導電吸收層(REGULUS公司製、商品名:PANI-PD、厚度20μm),除此以外與實 施例1C同樣地製造電磁波遮蔽用膜片與電子零件。 As a resin constituting the barrier layer, a polyaniline dispersion liquid was prepared for use as a conductive absorption layer (manufactured by REGULUS Co., Ltd., trade name: PANI-PD, thickness: 20 μm) as an absorption layer, and In the same manner as in Example 1C, a diaphragm for electromagnetic wave shielding and an electronic component were produced in the same manner.

(實施例6C) (Example 6C)

作為構成阻擋層之樹脂,準備多層奈米碳管分散液用於作為吸收層之介電吸收層(保土谷化學公司製、商品名:NT-7K、厚度20μm),除此以外與實施例1C同樣地製造電磁波遮蔽用膜片與電子零件。 In the resin constituting the barrier layer, a multilayered carbon nanotube dispersion liquid was prepared for use as a dielectric absorbing layer (manufactured by Hodogaya Chemical Co., Ltd., trade name: NT-7K, thickness: 20 μm) as an absorbing layer, and Example 1C was used. Similarly, a diaphragm for electromagnetic wave shielding and an electronic component are manufactured.

(實施例7C) (Example 7C)

作為構成阻擋層之樹脂,準備PEDOT/PSS用於作為吸收層之導電吸收層(中京油脂(股)公司製、商品名:S-941、厚度20μm),除此以外與實施例1C同樣地製造電磁波遮蔽用膜片與電子零件。 The PEDOT/PSS was produced in the same manner as in Example 1C except that a conductive absorbing layer (manufactured by Nakagata Oil Co., Ltd., trade name: S-941, thickness: 20 μm) was used as the resin for the barrier layer. Diaphragm for electromagnetic wave shielding and electronic parts.

(實施例8C) (Example 8C)

作為構成阻擋層之樹脂,準備用於作為反射層之導電性黏著劑層(東洋紡公司製、商品名:DW260-H1、厚度10μm)、與準備用於作為吸收層之導電吸收層的聚苯胺分散液(REGULUS(股)公司製、商品名:PANI-PD、厚度10μm),並將此等依反射層、吸收層之順序塗覆於膜,除此以外與實施例1C同樣地製造電磁波遮蔽用膜片與電子零件。 As the resin constituting the barrier layer, a conductive adhesive layer (manufactured by Toyobo Co., Ltd., trade name: DW260-H1, thickness: 10 μm) and a conductive absorbing layer prepared as an absorbing layer are prepared. The electromagnetic wave shielding was produced in the same manner as in Example 1C except that the liquid (manufactured by REGULUS Co., Ltd., trade name: PANI-PD, thickness: 10 μm) was applied to the film in the order of the reflection layer and the absorption layer. Diaphragms and electronic parts.

(實施例9C) (Example 9C)

作為構成阻擋層之樹脂,準備用於作為反射層之導電性黏著劑層(大研化學工業(股)公司製、商品名:CA-2503-4B、厚度10μm)、與用於作為吸收層之介電吸收層(PEDOT/PSS(中京油脂(股)公司製、商品名:S-941、厚度10μm),將此等以反射層、吸收層之順序塗覆於膜,除此以外與實施例1C同樣地製造電磁波遮蔽用膜片與電子零件。 As a resin constituting the barrier layer, a conductive adhesive layer (manufactured by Daikin Chemical Co., Ltd., trade name: CA-2503-4B, thickness: 10 μm) as a reflective layer is prepared and used as an absorbing layer. Dielectric absorber layer (PEDOT/PSS (manufactured by Nakagata Oil & Fats Co., Ltd., trade name: S-941, thickness: 10 μm), which is applied to the film in the order of the reflective layer and the absorbing layer, and the examples and examples In the same manner, 1C manufactures a diaphragm for electromagnetic wave shielding and an electronic component.

(實施例10C) (Example 10C)

作為構成阻擋層之樹脂,準備用於作為反射層之導電性黏著劑層(東洋紡公司製、商品名:DW260-H1、厚度10μm)、與準備用於作為吸收層之導電吸收層的聚苯胺分散液(REGULUS(股)公司製、商品名:PANI-PD、厚度 10μm),將此等以吸收層、反射層之順序塗覆成膜,除此以外與實施例1C同樣地製造電磁波遮蔽用膜片與電子零件。 As the resin constituting the barrier layer, a conductive adhesive layer (manufactured by Toyobo Co., Ltd., trade name: DW260-H1, thickness: 10 μm) and a conductive absorbing layer prepared as an absorbing layer are prepared. Liquid (REGULUS company, trade name: PANI-PD, thickness 10 μm) The film for electromagnetic wave shielding and the electronic component were produced in the same manner as in Example 1C except that the film was applied in the order of the absorbing layer and the reflecting layer.

(實施例11C) (Example 11C)

作為構成阻擋層之樹脂,準備用於作為反射層之導電性黏著劑層(大研化學工業(股)公司製、商品名:CA-2503-4B、厚度10μm)、與用於作為吸收層之介電吸收層(PEDOT/PSS(中京油脂公司製、商品名:S-941、厚度10μm),將此以吸收層、反射層之順序塗覆成膜,除此以外與實施例1C同樣地製造電磁波遮蔽用膜片與電子零件。 As a resin constituting the barrier layer, a conductive adhesive layer (manufactured by Daikin Chemical Co., Ltd., trade name: CA-2503-4B, thickness: 10 μm) as a reflective layer is prepared and used as an absorbing layer. A dielectric absorbing layer (PEDOT/PSS (manufactured by Nakagisa Oil Co., Ltd., trade name: S-941, thickness: 10 μm) was produced in the same manner as in Example 1C except that the film was coated in the order of the absorbing layer and the reflecting layer. Diaphragm for electromagnetic wave shielding and electronic parts.

<評價試驗> <evaluation test>

針對實施例1C~11C製作之電磁波遮蔽用膜片、或電子零件,也與針對實施例1A~23A、及比較例1A、2A製作之電磁波遮蔽用膜片、或電子零件所實施者同樣進行,進行形狀追隨性、離型性、耐折疊性、基材層之第2層滲出性、耐熱性、電磁波遮蔽之裁切.衝壓作業性之評價。 The electromagnetic wave shielding film or the electronic component produced in the examples 1C to 11C was also carried out in the same manner as those of the electromagnetic wave shielding film or the electronic component produced in the first to third embodiments, and the electromagnetic wave shielding film produced in the first to third embodiments. Shape follow-up, release, folding resistance, second layer exudation of the substrate layer, heat resistance, cutting of electromagnetic wave shielding. Evaluation of stamping workability.

以上之各實施例、比較例之評價結果如表3所示。 The evaluation results of the above respective examples and comparative examples are shown in Table 3.

如表3可明白:如實施例1C~11C所示,藉由不僅將基材層於150℃之貯藏彈性係數設定在適當範圍內,也將電磁波阻擋層於150℃之貯藏彈性係數設定為適當範圍內,顯示良好的形狀追隨性。再者,關於離型性、耐折疊性、基材層之第2層滲出性、耐熱性、電磁波遮蔽之裁切.衝壓作業性,也能獲得均衡性良好之優良者。 As can be seen from Table 3, as shown in Examples 1C to 11C, the storage elastic modulus of the electromagnetic wave barrier layer at 150 ° C was set to be appropriate by setting not only the storage elastic modulus of the substrate layer at 150 ° C in an appropriate range. Within the range, it shows good shape followability. Furthermore, the release property, the folding resistance, the second layer exudation property of the base material layer, the heat resistance, and the cutting of the electromagnetic wave shielding. Stamping workability can also achieve excellent balance.

4.關於電磁波遮蔽用膜片之層構成之探討 4. Discussion on the layer composition of the diaphragm for electromagnetic wave shielding

(實施例1D) (Example 1D)

<電磁波遮蔽用膜片之製造> <Manufacture of diaphragm for electromagnetic wave shielding>

為了獲得電磁波遮蔽用膜片,準備對排聚苯乙烯(出光興產(股)公司製、商品名:XAREC S107)作為構成第1層(第1離型層)之樹脂。準備對排聚苯乙烯(出光興產(股)公司製、商品名:XAREC S107),作為構成第3層(第2離型層)之樹脂。準備乙烯-甲基丙烯酸酯共聚物(住友化學(股)公司製、商品名:ACRYFT WD106)作為構成第2層(緩衝層)之樹脂。準備聚烯烴系乳劑(UNITIKA(股)公司製、商品名:A-BASE TC-4010)作為構成絕緣層之樹脂。準備導電性黏著劑層(東洋紡(股)公司製、商品名:DW-260H-1)作為構成電磁波阻擋層之樹脂。 In order to obtain a film for electromagnetic wave shielding, a polystyrene (manufactured by Idemitsu Kogyo Co., Ltd., trade name: XAREC S107) was prepared as a resin constituting the first layer (first release layer). The styrene polystyrene (manufactured by Idemitsu Kosan Co., Ltd., trade name: XAREC S107) was prepared as a resin constituting the third layer (second release layer). An ethylene-methacrylate copolymer (manufactured by Sumitomo Chemical Co., Ltd., trade name: ACRYFT WD106) was prepared as a resin constituting the second layer (buffer layer). A polyolefin emulsion (manufactured by UNITIKA Co., Ltd., trade name: A-BASE TC-4010) was prepared as a resin constituting the insulating layer. A conductive adhesive layer (manufactured by Toyobo Co., Ltd., trade name: DW-260H-1) was prepared as a resin constituting the electromagnetic wave blocking layer.

將作為第1層之前述對排聚苯乙烯、作為第3層之前述對排聚苯乙烯、與作為第2層之前述乙烯-甲基丙烯酸酯共聚物,使用進料組體及多歧管模進行共擠製,以膜化。將作為電磁波阻擋層之前述導電性黏著劑層,作為絕緣層之前述聚烯烴系乳劑,以此順序塗覆於基材層,製成電磁波遮蔽用膜片。 Using the above-mentioned aligned polystyrene as the first layer, the above-mentioned aligned polystyrene as the third layer, and the ethylene-methacrylate copolymer as the second layer, using the feed group and the multi-manifold The mold is coextruded to form a film. The conductive adhesive layer as the electromagnetic wave blocking layer and the polyolefin emulsion as the insulating layer are applied to the base material layer in this order to form a diaphragm for electromagnetic wave shielding.

實施例1D之電磁波遮蔽用膜片之全體之厚度為160μm,第1層之厚度為30μm、第3層之厚度為30μm、第2層之厚度為60μm、絕緣層之厚度為20μm、電磁波阻擋層之厚度為20μm。 The thickness of the entire electromagnetic wave shielding film of Example 1D was 160 μm, the thickness of the first layer was 30 μm, the thickness of the third layer was 30 μm, the thickness of the second layer was 60 μm, the thickness of the insulating layer was 20 μm, and the electromagnetic wave blocking layer. The thickness is 20 μm.

又,測定實施例1D之電磁波遮蔽用膜片之第1層、第2層及第3層之 平均線膨脹係數,結果各為420、2400及420ppm/℃。 Further, the first layer, the second layer, and the third layer of the electromagnetic wave shielding film of Example 1D were measured. The average coefficient of linear expansion was 420, 2400 and 420 ppm/°C.

再者,測定基材層及電磁波阻擋層於150℃之貯藏彈性係數,結果各為1.8E+07Pa、1.2E+07Pa。 Further, the storage elastic modulus of the base material layer and the electromagnetic wave blocking layer at 150 ° C was measured, and as a result, they were each 1.8 E + 07 Pa and 1.2 E + 07 Pa.

<電子零件之製造> <Manufacture of electronic parts>

將獲得之電磁波遮蔽用膜片,以溫度150度、壓力2.0MPa之條件,以5分鐘、真空壓空成形法,貼附在個人電腦用記憶體基板(Samsung(股)公司製、商品名:DDR2 667 M470T6554EZ3-CE6 PC2-5300)(高低差1,000μm)之表面。貼附後,以手工作業僅將基材層從電磁波阻擋層剝離,製造電子零件。 The electromagnetic wave shielding film obtained was attached to a memory substrate for a personal computer (manufactured by Samsung Co., Ltd. under the conditions of a temperature of 150 degrees and a pressure of 2.0 MPa in a vacuum pressure forming method for 5 minutes). DDR2 667 M470T6554EZ3-CE6 PC2-5300) (high and low difference of 1,000μm) surface. After the attachment, the substrate layer was peeled off from the electromagnetic wave blocking layer by hand to produce an electronic component.

(實施例2D) (Embodiment 2D)

設定第1層之厚度為80μm,除此以外與實施例1D同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1D except that the thickness of the first layer was set to 80 μm.

(實施例3D) (Embodiment 3D)

設定第1層之厚度為10μm,除此以外與實施例1D同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1D except that the thickness of the first layer was set to 10 μm.

(實施例4D) (Embodiment 4D)

設定第2層之厚度為90μm,除此以外與實施例1D同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1D except that the thickness of the second layer was changed to 90 μm.

(實施例5D) (Example 5D)

設定第2層之厚度為20μm,除此以外與實施例1D同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1D except that the thickness of the second layer was set to 20 μm.

(實施例6D) (Example 6D)

設定第3層之厚度為10μm,除此以外與實施例1D同樣地製造電磁波 遮蔽用膜片與電子零件。 Electromagnetic waves were produced in the same manner as in Example 1D except that the thickness of the third layer was set to 10 μm. Masking and electronic parts for shielding.

(實施例7D) (Example 7D)

設定第3層之厚度為90μm,除此以外與實施例1D同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1D except that the thickness of the third layer was set to 90 μm.

(實施例8D) (Example 8D)

設定絕緣層之厚度為5μm,除此以外與實施例1D同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1D except that the thickness of the insulating layer was set to 5 μm.

(實施例9D) (Example 9D)

設定絕緣層之厚度為50μm,除此以外與實施例1D同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1D except that the thickness of the insulating layer was changed to 50 μm.

(實施例10D) (Example 10D)

設定電磁波阻擋層之厚度為5μm,除此以外與實施例1D同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1D except that the thickness of the electromagnetic wave blocking layer was set to 5 μm.

(實施例11D) (Example 11D)

設定電磁波阻擋層之厚度為150μm,除此以外與實施例1D同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1D except that the thickness of the electromagnetic wave blocking layer was changed to 150 μm.

(實施例12D) (Example 12D)

作為第1層,準備將對排聚苯乙烯(出光興產(股)公司製、商品名:XAREC S107)與苯乙烯-乙烯-丁烯-苯乙烯嵌段共聚物(可樂麗(股)公司製、商品名:SEPTON S8007)各以重量百分比濃度60wt%、40wt%摻合而得之摻合品,除此以外與實施例1D同樣地製造電磁波遮蔽用膜片與電子零件。 As the first layer, we prepare a pair of polystyrene (made by Idemitsu Kosan Co., Ltd., trade name: XAREC S107) and a styrene-ethylene-butylene-styrene block copolymer (Kuraray Co., Ltd.) In the same manner as in Example 1D, a film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1D, except that a blend of 60% by weight and 40% by weight of each of the blends was used.

(實施例13D) (Example 13D)

作為第1層,準備將對排聚苯乙烯(出光興產(股)公司製、商品名:XAREC S107)與苯乙烯-乙烯-丁烯-苯乙烯嵌段共聚物(可樂麗(股)公司製、商品名:SEPTON S8007)分別以重量百分比濃度80wt%、20wt%摻合而得之 摻合品,除此以外與實施例1D同樣準備。 As the first layer, we prepare a pair of polystyrene (made by Idemitsu Kosan Co., Ltd., trade name: XAREC S107) and a styrene-ethylene-butylene-styrene block copolymer (Kuraray Co., Ltd.) System, trade name: SEPTON S8007) respectively obtained by blending 80% by weight and 20% by weight The mixture was prepared in the same manner as in Example 1D except for the blend.

(實施例14D) (Example 14D)

作為第1層,準備聚甲基戊烯(三井化學(股)公司製、商品名:TPX MX004),除此以外與實施例1D同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1D except that polymethylpentene (manufactured by Mitsui Chemicals, Inc., trade name: TPX MX004) was prepared as the first layer.

(實施例15D) (Example 15D)

作為第1層,準備聚對苯二甲酸丁二醇酯(三菱工程塑膠(股)公司製、商品名:NOVADURAN 5505S),除此以外與實施例1D同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and electronic parts were produced in the same manner as in Example 1D except that polybutylene terephthalate (manufactured by Mitsubishi Engineering Plastics Co., Ltd., trade name: NOVADURAN 5505S) was prepared as the first layer. .

(實施例16D) (Example 16D)

作為第2層,準備將乙烯-甲基丙烯酸酯共聚物(住友化學(股)公司製、商品名:ACRYFT WD106)與聚丙烯(住友化學(股)公司製、商品名:NOBRENE FS2011DG2)各以重量百分比濃度70wt%、30wt%摻合而得之摻合品,除此以外與實施例1D同樣地製造電磁波遮蔽用膜片與電子零件。 As the second layer, an ethylene-methacrylate copolymer (manufactured by Sumitomo Chemical Co., Ltd., trade name: ACRYFT WD106) and polypropylene (manufactured by Sumitomo Chemical Co., Ltd., trade name: NOBRENE FS2011DG2) were prepared. A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1D except that the blended product was blended in an amount of 70% by weight and 30% by weight.

(實施例17D) (Example 17D)

作為第2層,準備將乙烯-甲基丙烯酸酯共聚物(住友化學(股)公司製、商品名:ACRYFT WD106)與聚乙烯(宇部興產(股)公司製、商品名:UBE聚乙烯F222NH)各以重量百分比濃度70wt%、30wt%摻合而得之摻合品,除此以外與實施例1D同樣地製造電磁波遮蔽用膜片與電子零件。 As the second layer, an ethylene-methacrylate copolymer (manufactured by Sumitomo Chemical Co., Ltd., trade name: ACRYFT WD106) and polyethylene (manufactured by Ube Industries, Ltd., trade name: UBE polyethylene F222NH) were prepared. A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1D except that the blended product was blended in an amount of 70% by weight and 30% by weight.

(實施例18D) (Embodiment 18D)

作為第2層,準備將乙烯-甲基丙烯酸酯共聚物(住友化學(股)公司製、商品名:ACRYFT WD106)、聚乙烯(宇部興產(股)公司製、商品名:UBE聚乙烯F222NH)、與聚丙烯(住友化學(股)公司製、商品名:NOBRENE FS2011DG2)各以重量百分比濃度60wt%、20wt%、20wt%摻合而得之摻合品,除此以外與實施例1D同樣地製造電磁波遮蔽用膜片與電子零件。 As the second layer, an ethylene-methacrylate copolymer (manufactured by Sumitomo Chemical Co., Ltd., trade name: ACRYFT WD106) and polyethylene (manufactured by Ube Industries, Ltd., trade name: UBE polyethylene F222NH) were prepared. And the blended product obtained by blending each of the polypropylene (Sumitomo Chemical Co., Ltd., trade name: NOBRENE FS2011 DG2) at a concentration by weight of 60% by weight, 20% by weight, or 20% by weight, except for the blended product of Example 1D. A diaphragm for electromagnetic wave shielding and an electronic component are manufactured.

(實施例19D) (Example 19D)

作為絕緣層,準備飽和共聚合聚酯乳劑(UNITIKA(股)公司製、商品名:ELITEL KT-8803),除此以外與實施例1D同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1D except that a saturated copolymerized polyester emulsion (manufactured by UNITIKA Co., Ltd., trade name: ELITEL KT-8803) was prepared.

(實施例20D) (Embodiment 20D)

設定第1層之厚度為5μm,除此以外與實施例1D同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1D except that the thickness of the first layer was set to 5 μm.

(實施例21D) (Example 21D)

設定第2層之厚度為120μm,除此以外與實施例1D同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1D except that the thickness of the second layer was set to 120 μm.

(實施例22D) (Example 22D)

設定第3層之厚度為3μm,除此以外與實施例1D同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1D except that the thickness of the third layer was set to 3 μm.

(實施例23D) (Embodiment 23D)

設定第2層之厚度為80μm、第1層之厚度為10μm,除此以外與實施例1D同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1D except that the thickness of the second layer was 80 μm and the thickness of the first layer was 10 μm.

(實施例24D) (Embodiment 24D)

設定第1層之厚度為5μm、第2層之厚度為80μm、第3層之厚度為5μm,除此以外與實施例1D同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1D except that the thickness of the first layer was 5 μm, the thickness of the second layer was 80 μm, and the thickness of the third layer was 5 μm.

(實施例25D) (Embodiment 25D)

省略第1層之形成,且電磁波阻擋層使用導電性高分子聚苯胺分散液(REGULUS公司製PANI-PD),除此以外與實施例1D同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1D except that the formation of the first layer was omitted, and the conductive polymer polyaniline dispersion (PANI-PD manufactured by REGULUS Co., Ltd.) was used as the electromagnetic wave barrier layer.

(實施例26D) (Embodiment 26D)

省略第3層之形成,除此以外與實施例1D同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1D except that the formation of the third layer was omitted.

(比較例1D) (Comparative Example 1D)

作為基材層,僅準備聚對苯二甲酸乙二醇酯(東麗(股)公司製、商品名:LUMIRROR S10),並設定基材層之厚度為30μm,除此以外與實施例1D同樣地製造電磁波遮蔽用膜片與電子零件。 In the same manner as in Example 1D, except that polyethylene terephthalate (manufactured by Toray Industries, Inc., trade name: LUMIRROR S10) was prepared as the base material layer, and the thickness of the base material layer was set to 30 μm. A diaphragm for electromagnetic wave shielding and an electronic component are manufactured.

(比較例2D) (Comparative Example 2D)

作為基材層,僅準備聚對苯二甲酸乙二醇酯(東麗(股)公司製、商品名:LUMIRROR S10),並設定基材層之厚度為100μm,除此以外與實施例1D同樣地製造電磁波遮蔽用膜片與電子零件。 In the same manner as in Example 1D, except that polyethylene terephthalate (manufactured by Toray Industries, Inc., trade name: LUMIRROR S10) was prepared as the base material layer, and the thickness of the base material layer was set to 100 μm. A diaphragm for electromagnetic wave shielding and an electronic component are manufactured.

<評價試驗> <evaluation test>

針對實施例1D~26D、及比較例1D、2D製作之電磁波遮蔽用膜片、或電子零件,與前述<評價試驗>同樣地評價形狀追隨性、離型性、耐折疊性、基材層之第2層滲出性、耐熱性、電磁波遮蔽之裁切.衝壓作業性。 The film for electromagnetic wave shielding produced in Examples 1D to 26D and Comparative Examples 1D and 2D, or an electronic component, was evaluated for shape followability, release property, folding resistance, and substrate layer in the same manner as in the above <Evaluation Test>. The second layer of exudation, heat resistance, electromagnetic wave shielding cutting. Stamping workability.

以上之各實施例、比較例之評價結果如表4所示。 The evaluation results of the above respective examples and comparative examples are shown in Table 4.

由表4可明白:實施例1D~24D之電磁波遮蔽用膜片顯示良好的形狀追隨性,且關於離型性、耐折疊性、基材層之第2層滲出性、電磁波遮蔽之裁切.衝壓作業性,也係均衡性良好,為優異。相對於此,比較例1D、2D之電磁波遮蔽用膜片,比起實施例1D~26D之電磁波遮蔽用膜片,為形狀追隨性不充分令人滿意的結果。 It can be understood from Table 4 that the electromagnetic wave shielding films of Examples 1D to 24D exhibit good shape followability, and are related to release property, folding resistance, second layer exudation property of the substrate layer, and shielding of electromagnetic wave shielding. The punching workability is also excellent in balance. On the other hand, in the electromagnetic wave shielding films of Comparative Examples 1D and 2D, the shape followability was not satisfactory as compared with the electromagnetic wave shielding films of Examples 1D to 26D.

5.關於基材層之貯藏彈性係數之探討 5. Discussion on the storage elastic coefficient of the substrate layer

(實施例1E) (Example 1E)

<電磁波遮蔽用膜片之製造> <Manufacture of diaphragm for electromagnetic wave shielding>

為了獲得電磁波遮蔽用膜片,準備對排聚苯乙烯(出光興產(股)公司製、商品名:XAREC S107)作為構成第1層(第1離型層)之樹脂。準備對排聚苯乙烯(出光興產(股)公司製、商品名:XAREC S107)作為構成第3層(第2離型層)之樹脂。準備乙烯-甲基丙烯酸酯共聚物(住友化學(股)公司製、商品名:ACRYFT WD106)作為構成第2層(緩衝層)之樹脂。準備聚烯烴系乳劑(UNITIKA(股)公司製、商品名:A-BASE TC-4010)作為構成絕緣層之樹脂。準備導電性黏著劑層(東洋紡(股)公司製、商品名:DW-260H-1)作為構成電磁波阻擋層之樹脂。 In order to obtain a film for electromagnetic wave shielding, a polystyrene (manufactured by Idemitsu Kogyo Co., Ltd., trade name: XAREC S107) was prepared as a resin constituting the first layer (first release layer). The styrene polystyrene (manufactured by Idemitsu Kosan Co., Ltd., trade name: XAREC S107) was prepared as a resin constituting the third layer (second release layer). An ethylene-methacrylate copolymer (manufactured by Sumitomo Chemical Co., Ltd., trade name: ACRYFT WD106) was prepared as a resin constituting the second layer (buffer layer). A polyolefin emulsion (manufactured by UNITIKA Co., Ltd., trade name: A-BASE TC-4010) was prepared as a resin constituting the insulating layer. A conductive adhesive layer (manufactured by Toyobo Co., Ltd., trade name: DW-260H-1) was prepared as a resin constituting the electromagnetic wave blocking layer.

將作為第1層之前述對排聚苯乙烯、作為第3層之前述對排聚苯乙烯、與作為第2層之前述乙烯-甲基丙烯酸酯共聚物,使用進料組體及多歧管模,以共擠製予以膜化。將作為電磁波阻擋層之前述導電性黏著劑層、作為絕緣層之前述聚烯烴系乳劑,以此順序塗覆於基材層,而製成電磁波遮蔽用膜片。 Using the above-mentioned aligned polystyrene as the first layer, the above-mentioned aligned polystyrene as the third layer, and the ethylene-methacrylate copolymer as the second layer, using the feed group and the multi-manifold The mold was filmed by coextrusion. The conductive adhesive layer as the electromagnetic wave blocking layer and the polyolefin emulsion as the insulating layer are applied to the base material layer in this order to form a diaphragm for electromagnetic wave shielding.

實施例1E之電磁波遮蔽用膜片之全體之厚度為160μm,第1層之厚度為30μm、第3層之厚度為30μm、第2層之厚度為60μm、絕緣層之厚度為20μm、電磁波阻擋層之厚度為20μm。 The thickness of the entire electromagnetic wave shielding film of Example 1E was 160 μm, the thickness of the first layer was 30 μm, the thickness of the third layer was 30 μm, the thickness of the second layer was 60 μm, the thickness of the insulating layer was 20 μm, and the electromagnetic wave blocking layer. The thickness is 20 μm.

又,測定實施例1E之電磁波遮蔽用膜片之第1層、第2層及第3層之 平均線膨脹係數,結果各為420、2400及420ppm/℃。 Further, the first layer, the second layer, and the third layer of the electromagnetic wave shielding film of Example 1E were measured. The average coefficient of linear expansion was 420, 2400 and 420 ppm/°C.

再者,測定基材層及電磁波阻擋層於150℃之貯藏彈性係數,結果各為1.8E+07Pa、1.2E+07Pa。 Further, the storage elastic modulus of the base material layer and the electromagnetic wave blocking layer at 150 ° C was measured, and as a result, they were each 1.8 E + 07 Pa and 1.2 E + 07 Pa.

<電子零件之製造> <Manufacture of electronic parts>

將獲得之電磁波遮蔽用膜片,以溫度150度、壓力2.0MPa之條件,以5分鐘、真空壓空成形法,貼附在個人電腦用記憶體基板(Samsung(股)公司製、商品名:DDR2 667 M470T6554EZ3-CE6 PC2-5300)(高低差1,000μm)之表面。貼附後,以手工作業僅將基材層從電磁波阻擋層剝離,製造電子零件。 The electromagnetic wave shielding film obtained was attached to a memory substrate for a personal computer (manufactured by Samsung Co., Ltd. under the conditions of a temperature of 150 degrees and a pressure of 2.0 MPa in a vacuum pressure forming method for 5 minutes). DDR2 667 M470T6554EZ3-CE6 PC2-5300) (high and low difference of 1,000μm) surface. After the attachment, the substrate layer was peeled off from the electromagnetic wave blocking layer by hand to produce an electronic component.

(實施例2E) (Embodiment 2E)

作為第2層,準備將乙烯-甲基丙烯酸酯共聚物(住友化學(股)公司製、商品名:ACRYFT WD106)與聚丙烯(住友化學(股)公司製、商品名:NOBRENE FS2011DG2)各以重量百分比濃度70wt%、30wt%摻合而得之摻合品,除此以外與實施例1E同樣地製造電磁波遮蔽用膜片與電子零件。 As the second layer, an ethylene-methacrylate copolymer (manufactured by Sumitomo Chemical Co., Ltd., trade name: ACRYFT WD106) and polypropylene (manufactured by Sumitomo Chemical Co., Ltd., trade name: NOBRENE FS2011DG2) were prepared. A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1E except that the blended product was blended in an amount of 70% by weight and 30% by weight.

(實施例3E) (Embodiment 3E)

設定第1層之厚度為10μm,除此以外與實施例1E同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1E except that the thickness of the first layer was set to 10 μm.

(實施例4E) (Embodiment 4E)

設定第2層之厚度為90μm,除此以外與實施例1E同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1E except that the thickness of the second layer was changed to 90 μm.

(實施例5E) (Example 5E)

作為第1層,準備將對排聚苯乙烯(出光興產(股)公司製、商品名:XAREC S107)與苯乙烯-乙烯-丁烯-苯乙烯嵌段共聚物(可樂麗(股)公司製、商品名:SEPTON S8007)各以重量百分比濃度60wt%、40wt%摻合而得之摻 合品,除此以外與實施例1E同樣地製造電磁波遮蔽用膜片與電子零件。 As the first layer, we prepare a pair of polystyrene (made by Idemitsu Kosan Co., Ltd., trade name: XAREC S107) and a styrene-ethylene-butylene-styrene block copolymer (Kuraray Co., Ltd.) System, trade name: SEPTON S8007) each blended by weight concentration of 60wt%, 40wt% A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1E except for the product.

(實施例6E) (Embodiment 6E)

設定第1層之厚度為80μm,除此以外與實施例1E同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1E except that the thickness of the first layer was set to 80 μm.

(實施例7E) (Example 7E)

設定第1層之厚度為100μm,除此以外與實施例1E同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1E except that the thickness of the first layer was set to 100 μm.

(實施例8E) (Example 8E)

作為第1層,準備將對排聚苯乙烯(出光興產(股)公司製、商品名:XAREC S107)與聚丙烯(住友化學(股)公司製、商品名:NOBRENE FS2011DG2)各以重量百分比濃度60wt%、40wt%摻合而得之摻合品,除此以外與實施例1E同樣地製造電磁波遮蔽用膜片與電子零件。 As a first layer, we prepare a pair of polystyrene (manufactured by Idemitsu Kogyo Co., Ltd., trade name: XAREC S107) and polypropylene (manufactured by Sumitomo Chemical Co., Ltd., trade name: NOBRENE FS2011DG2) in weight% A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1E except that the blended product was blended at a concentration of 60% by weight and 40% by weight.

(實施例9E) (Example 9E)

作為第2層,準備聚丙烯(住友化學(股)公司製、商品名:NOBRENE FS2011DG2),除此以外與實施例1E同樣地製造電磁波遮蔽用膜片與電子零件。 In the second layer, a film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1E except that the polypropylene (manufactured by Sumitomo Chemical Co., Ltd., trade name: NOBRENE FS2011 DG2) was prepared.

(實施例10E) (Example 10E)

作為第1層,準備聚對苯二甲酸丁二醇酯(三菱工程塑膠(股)公司製、商品名:NOVADURAN 5020),除此以外與實施例1E同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and electronic parts were produced in the same manner as in Example 1E except that polybutylene terephthalate (manufactured by Mitsubishi Engineering Plastics Co., Ltd., trade name: NOVADURAN 5020) was prepared as the first layer. .

(比較例1E) (Comparative Example 1E)

作為基材層,準備環狀烯烴系共聚物(POLYPLASTICS(股)公司製、商品名:TOPAS6017),除此以外與實施例1E同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1E except that a cyclic olefin-based copolymer (manufactured by POLYPLASTICS Co., Ltd., trade name: TOPAS 6017) was prepared.

(比較例2E) (Comparative Example 2E)

設定第3層之厚度為1μm、第1層之厚度為1μm,除此以外與實施例1E同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1E except that the thickness of the third layer was 1 μm and the thickness of the first layer was 1 μm.

<評價試驗> <evaluation test>

針對實施例1E~10E、及比較例1E、2E製作之電磁波遮蔽用膜片、或電子零件,也與針對實施例1D~26D、及比較例1D、2D製作之電磁波遮蔽用膜片、或電子零件所實施者同樣進行,實施形狀追隨性、離型性、耐折疊性、基材層之第2層滲出性、耐熱性、電磁波遮蔽之裁切.衝壓作業性之評價。 The electromagnetic wave shielding film or electronic component produced in Examples 1E to 10E and Comparative Examples 1E and 2E, and the electromagnetic wave shielding film or electrons produced in Examples 1D to 26D and Comparative Examples 1D and 2D. The parts are carried out in the same manner, and the shape followability, release property, folding resistance, second layer exudation property of the base material layer, heat resistance, and electromagnetic wave shielding are performed. Evaluation of stamping workability.

以上之各實施例、比較例之評價結果如表5所示。 The evaluation results of the above respective examples and comparative examples are shown in Table 5.

由表5可明白:實施例1E~10E,因為將基材層於150℃之貯藏彈性係數設定為為適當範圍內,顯示良好的形狀追隨性。再者,關於離型性、耐折疊性、基材層之第2層滲出性、耐熱性、電磁波遮蔽之裁切.衝壓作業性,也係均衡性良好,為優良結果。 As is clear from Table 5, in Examples 1E to 10E, since the storage elastic modulus of the base material layer at 150 ° C was set to an appropriate range, good shape followability was exhibited. Furthermore, the release property, the folding resistance, the second layer exudation property of the base material layer, the heat resistance, and the cutting of the electromagnetic wave shielding. The punching workability is also good in balance, which is an excellent result.

相對於此,比較例1E、2E中,未將基材層於150℃之貯藏彈性係數設定為適當範圍內,結果形狀追隨性未充分令人滿意。 On the other hand, in Comparative Examples 1E and 2E, the storage elastic modulus of the base material layer at 150 ° C was not set to an appropriate range, and as a result, the shape followability was not sufficiently satisfactory.

6.關於阻擋層之層構成及貯藏彈性係數之探討 6. Discussion on the layer composition of the barrier layer and the storage elastic coefficient

(實施例1F) (Example 1F)

<電磁波遮蔽用膜片之製造> <Manufacture of diaphragm for electromagnetic wave shielding>

為了獲得電磁波遮蔽用膜片,準備對排聚苯乙烯(出光興產(股)公司製、商品名:XAREC S107)作為構成第1層(第1離型層)之樹脂。準備對排聚苯乙烯(出光興產(股)公司製、商品名:XAREC S107)作為構成第3層(第2離型層)之樹脂。準備乙烯-甲基丙烯酸酯共聚物(住友化學(股)公司製、商品名:ACRYFT WD106)作為構成第2層(緩衝層)之樹脂。準備聚烯烴系乳劑(UNITIKA(股)公司製、商品名:A-BASE TC-4010)作為構成絕緣層之樹脂。準備導電性黏著劑層(東洋紡(股)公司製、商品名:DW-260H-1)作為構成電磁波阻擋層之樹脂。 In order to obtain a film for electromagnetic wave shielding, a polystyrene (manufactured by Idemitsu Kogyo Co., Ltd., trade name: XAREC S107) was prepared as a resin constituting the first layer (first release layer). The styrene polystyrene (manufactured by Idemitsu Kosan Co., Ltd., trade name: XAREC S107) was prepared as a resin constituting the third layer (second release layer). An ethylene-methacrylate copolymer (manufactured by Sumitomo Chemical Co., Ltd., trade name: ACRYFT WD106) was prepared as a resin constituting the second layer (buffer layer). A polyolefin emulsion (manufactured by UNITIKA Co., Ltd., trade name: A-BASE TC-4010) was prepared as a resin constituting the insulating layer. A conductive adhesive layer (manufactured by Toyobo Co., Ltd., trade name: DW-260H-1) was prepared as a resin constituting the electromagnetic wave blocking layer.

將作為第1層之前述對排聚苯乙烯、作為第3層之前述對排聚苯乙烯、與作為第2層之前述乙烯-甲基丙烯酸酯共聚物,使用進料組體及多歧管模進行共擠製以膜化。將作為電磁波阻擋層之前述導電性黏著劑層,作為絕緣層之前述聚烯烴系乳劑,依此順序塗覆於基材層,而製作電磁波遮蔽用膜片。 Using the above-mentioned aligned polystyrene as the first layer, the above-mentioned aligned polystyrene as the third layer, and the ethylene-methacrylate copolymer as the second layer, using the feed group and the multi-manifold The mold was coextruded to form a film. The conductive adhesive layer as the electromagnetic wave blocking layer and the polyolefin-based emulsion as the insulating layer are applied to the base material layer in this order to prepare a film for electromagnetic wave shielding.

實施例1F之電磁波遮蔽用膜片之全體之厚度為160μm,第1層之厚度為30μm、第3層之厚度為30μm、第2層之厚度為60μm、絕緣層之厚度為20μm、電磁波阻擋層之厚度為20μm。 The thickness of the entire electromagnetic wave shielding film of Example 1F was 160 μm, the thickness of the first layer was 30 μm, the thickness of the third layer was 30 μm, the thickness of the second layer was 60 μm, the thickness of the insulating layer was 20 μm, and the electromagnetic wave blocking layer. The thickness is 20 μm.

又,測定實施例1F之電磁波遮蔽用膜片之第1層、第2層及第3層之平均線膨脹係數,結果各為420、2400及420。 Further, the average linear expansion coefficients of the first layer, the second layer, and the third layer of the electromagnetic wave shielding film of Example 1F were measured, and as a result, they were 420, 2400, and 420, respectively.

再者,測定基材層及電磁波阻擋層於150℃之貯藏彈性係數,結果各為1.8E+07Pa、1.2E+07Pa。 Further, the storage elastic modulus of the base material layer and the electromagnetic wave blocking layer at 150 ° C was measured, and as a result, they were each 1.8 E + 07 Pa and 1.2 E + 07 Pa.

<電子零件之製造> <Manufacture of electronic parts>

將獲得之電磁波遮蔽用膜片,以溫度150度、壓力2.0MPa之條件,以5分鐘、真空壓空成形法,貼附在個人電腦用記憶體基板(Samsung(股)公司製、商品名:DDR2 667 M470T6554EZ3-CE6 PC2-5300)(高低差1,000μm)之表面。貼附後,以手工作業僅將基材層從電磁波阻擋層剝離,製造電子零件。 The electromagnetic wave shielding film obtained was attached to a memory substrate for a personal computer (manufactured by Samsung Co., Ltd. under the conditions of a temperature of 150 degrees and a pressure of 2.0 MPa in a vacuum pressure forming method for 5 minutes). DDR2 667 M470T6554EZ3-CE6 PC2-5300) (high and low difference of 1,000μm) surface. After the attachment, the substrate layer was peeled off from the electromagnetic wave blocking layer by hand to produce an electronic component.

(實施例2F) (Example 2F)

將導電性黏著劑層(東洋紡(股)公司製、商品名:DW-250H-5)作為電磁波阻擋層,除此以外與實施例1F同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1F except that the conductive adhesive layer (manufactured by Toyobo Co., Ltd., trade name: DW-250H-5) was used as the electromagnetic wave blocking layer.

(實施例3F) (Example 3F)

將導電性黏著劑層(東洋紡(股)公司製、商品名:DW-250H-23)作為電磁波阻擋層,除此以外與實施例1F同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1F except that the conductive adhesive layer (manufactured by Toyobo Co., Ltd., trade name: DW-250H-23) was used as the electromagnetic wave blocking layer.

(實施例4F) (Example 4F)

將導電性黏著劑層(大研化學工業(股)公司製、商品名:CA-2503-4B)作為電磁波阻擋層,除此以外與實施例1F同樣地製造電磁波遮蔽用膜片與電子零件。 A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1F except that the conductive adhesive layer (manufactured by Daikin Chemical Co., Ltd., trade name: CA-2503-4B) was used as the electromagnetic wave blocking layer.

(實施例5F) (Example 5F)

就構成阻擋層之樹脂而言,準備聚苯胺分散液(REGULUS公司製、商品名:PANI-PD、厚度20μm)作為用於吸收層之導電吸收層,除此以外與實 施例1F同樣地製造電磁波遮蔽用膜片與電子零件。 For the resin constituting the barrier layer, a polyaniline dispersion (manufactured by REGULUS, trade name: PANI-PD, thickness: 20 μm) was prepared as a conductive absorbing layer for the absorbing layer, and In the same manner as in the example 1F, a diaphragm for electromagnetic wave shielding and an electronic component were produced.

(實施例6F) (Example 6F)

就構成阻擋層之樹脂而言,準備多層奈米碳管分散液(保土谷化學公司製、商品名:NT-7K、厚度20μm)作為用於吸收層之介電吸收層,除此以外與實施例1F同樣地製造電磁波遮蔽用膜片與電子零件。 In the resin constituting the barrier layer, a multilayered carbon nanotube dispersion (manufactured by Hodogaya Chemical Co., Ltd., trade name: NT-7K, thickness: 20 μm) was prepared as a dielectric absorbing layer for an absorbing layer, and other methods were implemented. In the same manner as in Example 1F, a diaphragm for electromagnetic wave shielding and an electronic component were produced.

(實施例7F) (Example 7F)

就構成阻擋層之樹脂而言,準備PEDOT/PSS作為用於吸收層之導電吸收層(中京油脂公司製、商品名:S-941、厚度20μm),除此以外與實施例1F同樣地製造電磁波遮蔽用膜片與電子零件。 An electromagnetic wave was produced in the same manner as in Example 1F except that PEDOT/PSS was used as the conductive absorbing layer for the absorbing layer (manufactured by Nippon Oil & Fat Co., Ltd., trade name: S-941, thickness: 20 μm). Masking and electronic parts for shielding.

(實施例8F) (Example 8F)

就構成阻擋層之樹脂而言,準備聚苯胺分散液用於作為反射層之導電性黏著劑層(東洋紡公司製、商品名:DW260-H1、厚度10μm)、與作為吸收層之導電吸收層(REGULUS公司製、商品名:PANI-PD、厚度10μm),並將此等依反射層、吸收層之順序塗覆成膜,除此以外與實施例1F同樣地製造電磁波遮蔽用膜片與電子零件。 In the resin constituting the barrier layer, a polyaniline dispersion liquid is prepared for a conductive adhesive layer (manufactured by Toyobo Co., Ltd., trade name: DW260-H1, thickness: 10 μm) as a reflective layer, and a conductive absorption layer as an absorption layer ( A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1F except that the film was made of REGULUS, and the product name was PANI-PD, and the thickness was 10 μm. .

(實施例9F) (Example 9F)

就構成阻擋層之樹脂而言,準備用於作為反射層之導電性黏著劑層(大研化學工業(股)公司製、商品名:CA-2503-4B、厚度10μm)、與用於作為吸收層之介電吸收層(PEDOT/PSS(中京油脂(股)公司製、商品名:S-941、厚度10μm),並將此等以反射層、吸收層之順序塗覆成,除此以外與實施例1F同樣地製造電磁波遮蔽用膜片與電子零件。 The resin constituting the barrier layer is prepared as a conductive adhesive layer (manufactured by Daikin Chemical Co., Ltd., trade name: CA-2503-4B, thickness: 10 μm) as a reflective layer, and used as an absorption. a layer of a dielectric absorbing layer (PEDOT/PSS (manufactured by Nakagata Oil & Fats Co., Ltd., trade name: S-941, thickness: 10 μm), and these are coated in the order of the reflective layer and the absorbing layer, and In the same manner as in Example 1F, a diaphragm for electromagnetic wave shielding and an electronic component were produced.

(實施例10F) (Example 10F)

就構成阻擋層之樹脂而言,準備用於作為反射層之導電性黏著劑層(東洋紡公司製、商品名:DW260-H1、厚度10μm)、與準備用於作為吸收層之導電吸收層的聚苯胺分散液(REGULUS公司製、商品名:PANI-PD、厚度 10μm),並將此等以吸收層、反射層之順序塗覆成膜,除此以外與實施例1F同樣地製造電磁波遮蔽用膜片與電子零件。 The resin constituting the barrier layer is prepared by using a conductive adhesive layer (manufactured by Toyobo Co., Ltd., trade name: DW260-H1, thickness: 10 μm) as a reflective layer, and a conductive absorbing layer prepared as an absorbing layer. Aniline dispersion (manufactured by REGULUS, trade name: PANI-PD, thickness) A film for electromagnetic wave shielding and an electronic component were produced in the same manner as in Example 1F except that the film was applied to the film in the order of the absorbing layer and the reflecting layer.

(實施例11F) (Example 11F)

就構成阻擋層之樹脂而言,準備用於作為反射層之導電性黏著劑層(大研化學工業(股)公司製、商品名:CA-2503-4B、厚度10μm)、與用於作為吸收層之介電吸收層(PEDOT/PSS(中京油脂公司製、商品名:S-941、厚度10μm),並將此等以吸收層、反射層之順序塗覆成膜,除此以外與實施例1F同樣地製造電磁波遮蔽用膜片與電子零件。 The resin constituting the barrier layer is prepared as a conductive adhesive layer (manufactured by Daikin Chemical Co., Ltd., trade name: CA-2503-4B, thickness: 10 μm) as a reflective layer, and used as an absorption. a layer of a dielectric absorber layer (PEDOT/PSS (manufactured by Nakagata Oil Co., Ltd., trade name: S-941, thickness: 10 μm), and these were coated in the order of the absorber layer and the reflective layer, and the examples were In the same manner, 1F produces a diaphragm for electromagnetic wave shielding and an electronic component.

<評價試驗> <evaluation test>

針對實施例1F~11F製作之電磁波遮蔽用膜片、或電子零件,也與針對實施例1D~26D、及比較例1D、2D製作之電磁波遮蔽用膜片、或電子零件所實施者同樣進行,實施形狀追隨性、離型性、耐折疊性、基材層之第2層滲出性、耐熱性、電磁波遮蔽之裁切.衝壓作業性之評價。 The electromagnetic wave shielding film or the electronic component produced in the examples 1F to 11F was also carried out in the same manner as those of the electromagnetic wave shielding film or the electronic component produced in the first to third embodiments. Perform shape follow-up, release, folding resistance, second layer exudation of substrate layer, heat resistance, and cutting of electromagnetic wave shielding. Evaluation of stamping workability.

以上之各實施例、比較例之評價結果如表6所示。 The evaluation results of the above respective examples and comparative examples are shown in Table 6.

由表6可明白:如實施例1F~11F所示,藉由不僅將基材層於150℃之貯藏彈性係數設定為適當範圍內,也將電磁波阻擋層於150℃之貯藏彈性係數設定為適當範圍內,會顯示良好的形狀追隨性。再者,可獲得關於離型性、耐折疊性、基材層之第2層滲出性、耐熱性、電磁波遮蔽之裁切.衝壓作業性,也均衡性良好,為優良者。 It can be understood from Table 6 that, as shown in Examples 1F to 11F, the storage elastic modulus of the electromagnetic wave barrier layer at 150 ° C is also set to be appropriate by setting not only the storage elastic modulus of the substrate layer at 150 ° C to an appropriate range. Within the range, good shape followability is shown. Furthermore, the cutting property, the folding resistance, the second layer exudation property of the base material layer, the heat resistance, and the shielding of the electromagnetic wave shielding can be obtained. The workability of the press is also good, and it is excellent.

【產業利用性】 [Industry Utilization]

本發明之電磁波遮蔽用膜片,能提高基板之設計自由度,且可達到輕量化.薄型化,係對於500μm以上之凸部61有良好之形狀追隨性的電磁波遮蔽用膜片。 The electromagnetic wave shielding film of the present invention can improve the design freedom of the substrate and can achieve weight reduction. The film for electromagnetic wave shielding having good shape followability to the convex portion 61 of 500 μm or more is thinned.

1‧‧‧基材層 1‧‧‧ substrate layer

3‧‧‧阻擋層 3‧‧‧Block

11‧‧‧第1層 11‧‧‧1st floor

12‧‧‧第3層 12‧‧‧3rd floor

13‧‧‧第2層 13‧‧‧2nd floor

100‧‧‧電磁波遮蔽用膜片 100‧‧‧Magnetic wave shielding diaphragm

Claims (17)

一種電磁波遮蔽用膜片,係用於被覆基板上之凸部,其特徵為:含有基材層、及疊層於該基材層之一面側之電磁波阻擋層而構成,該基材層,係以至少2層疊層而得之疊層體構成。 A diaphragm for electromagnetic wave shielding is used for a convex portion on a coated substrate, and is characterized in that it comprises a base material layer and an electromagnetic wave blocking layer laminated on one surface side of the base material layer, and the base material layer is It is composed of a laminate obtained by laminating at least two layers. 如申請專利範圍第1項之電磁波遮蔽用膜片,其中,該基材層,係第1層、第2層、與第3層從另一面側起以此順序疊層而成為3層構成之疊層體。 The electromagnetic wave shielding film according to the first aspect of the invention, wherein the base material layer is formed by laminating the first layer, the second layer, and the third layer in this order from the other surface side. Laminate. 如申請專利範圍第2項之電磁波遮蔽用膜片,其中,該第1層於25~150℃之平均線膨脹係數為40~1000[ppm/℃]。 The electromagnetic wave shielding film according to the second aspect of the invention, wherein the first layer has an average linear expansion coefficient of from 40 to 1000 [ppm/°C] at 25 to 150 °C. 如申請專利範圍第2或3項之電磁波遮蔽用膜片,其中,該第1層之厚度T(A)為5μm以上、100μm以下。 The electromagnetic wave shielding film according to the second or third aspect of the invention, wherein the thickness T (A) of the first layer is 5 μm or more and 100 μm or less. 如申請專利範圍第2或3項之電磁波遮蔽用膜片,其中,該第3層於25~150℃之平均線膨脹係數為40~1000[ppm/℃]。 The electromagnetic wave shielding film according to the second or third aspect of the patent application, wherein the third layer has an average linear expansion coefficient of from 40 to 1000 [ppm/°C] at 25 to 150 °C. 如申請專利範圍第2或3項之電磁波遮蔽用膜片,其中,該第3層之厚度T(B)為5μm以上、100μm以下。 The electromagnetic wave shielding film according to the second or third aspect of the invention, wherein the thickness T (B) of the third layer is 5 μm or more and 100 μm or less. 如申請專利範圍第2或3項之電磁波遮蔽用膜片,其中,該第2層於25~150℃之平均線膨脹係數為400以上[ppm/℃]。 The electromagnetic wave shielding film according to the second or third aspect of the invention, wherein the second layer has an average linear expansion coefficient of from 400 to 150 [ppm/°C] at 25 to 150 °C. 如申請專利範圍第2或3項之電磁波遮蔽用膜片,其中,該第2層之厚度T(C)為10μm以上、100μm以下。 The electromagnetic wave shielding film according to the second or third aspect of the invention, wherein the thickness T (C) of the second layer is 10 μm or more and 100 μm or less. 如申請專利範圍第2或3項之電磁波遮蔽用膜片,其中,該第1層之厚度T(A)、該第3層之厚度T(B)、與該第2層之厚度T(C),滿足下列關係式(I):0.05<T(C)/(T(A)+T(B))<10...(I)。 The electromagnetic wave shielding film according to the second or third aspect of the invention, wherein the thickness T (A) of the first layer, the thickness T (B) of the third layer, and the thickness T (C) of the second layer ), satisfying the following relationship (I): 0.05 < T (C) / (T (A) + T (B)) < 10. . . (I). 如申請專利範圍第1至3項中任一項之電磁波遮蔽用膜片,其中,該電磁波阻擋層,係由反射層與吸收層構成,且係將此等層從該基材層之該其中一面側起以此順序疊層而得之疊層體。 The electromagnetic wave shielding film according to any one of claims 1 to 3, wherein the electromagnetic wave blocking layer is composed of a reflective layer and an absorbing layer, and the layers are from the substrate layer. The laminate is laminated on one side in this order. 如申請專利範圍第1項之電磁波遮蔽用膜片,其中,該基材層係第1層與第2層從另一面側起以此順序疊層而成為2層構成之疊層體。 The electromagnetic wave shielding film according to the first aspect of the invention, wherein the substrate layer is a laminate in which the first layer and the second layer are laminated in this order from the other surface side to form a two-layer structure. 如申請專利範圍第1項之電磁波遮蔽用膜片,其中,該基材層係第 2層與第3層從另一面側起以此順序疊層而成為2層構成之疊層體。 The electromagnetic wave shielding film according to the first aspect of the patent application, wherein the substrate layer is The two layers and the third layer are laminated in this order from the other surface side to form a two-layer laminate. 如申請專利範圍第1至3項中任一項之電磁波遮蔽用膜片,其中,將該電磁波遮蔽用膜片以溫度150℃、壓力2MPa、時間5分鐘之條件熱壓接於該基板上之該凸部時之形狀追隨性為500μm以上、3,000μm以下。 The electromagnetic wave shielding film according to any one of claims 1 to 3, wherein the electromagnetic wave shielding film is thermocompression-bonded to the substrate at a temperature of 150 ° C, a pressure of 2 MPa, and a time of 5 minutes. The shape followability at the time of the convex portion is 500 μm or more and 3,000 μm or less. 如申請專利範圍第1至3項中任一項之電磁波遮蔽用膜片,更包含疊層於該基材層與該電磁波阻擋層之間的絕緣層。 The electromagnetic wave shielding film according to any one of claims 1 to 3, further comprising an insulating layer laminated between the base material layer and the electromagnetic wave blocking layer. 如申請專利範圍第14項之電磁波遮蔽用膜片,其中,該絕緣層係以具有熱塑性之絕緣樹脂構成。 The electromagnetic wave shielding film according to claim 14, wherein the insulating layer is made of a thermoplastic resin. 如申請專利範圍第14項之電磁波遮蔽用膜片,其中,該絕緣層之厚度T(D)為3μm以上、50μm以下。 The electromagnetic wave shielding film according to claim 14, wherein the insulating layer has a thickness T (D) of 3 μm or more and 50 μm or less. 一種電子零件之被覆方法,其特徵為包含以下步驟:貼附步驟,將如申請專利範圍第1至16項中任一項之電磁波遮蔽用膜片貼附於該基板上之該凸部,使得該電磁波阻擋層與電子零件黏著;剝離步驟,於該貼附步驟之後,將該基材層從該電磁波阻擋層剝離。 A method of coating an electronic component, comprising the step of attaching a film for electromagnetic wave shielding according to any one of claims 1 to 16 to the convex portion on the substrate, such that the convex portion is attached to the substrate The electromagnetic wave blocking layer is adhered to the electronic component; and the peeling step is performed after the attaching step, the substrate layer is peeled off from the electromagnetic wave blocking layer.
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Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6125328B2 (en) * 2013-05-27 2017-05-10 日東電工株式会社 Method for manufacturing soft magnetic film laminated circuit board
JP2016058565A (en) * 2014-09-10 2016-04-21 住友ベークライト株式会社 Film for electromagnetic shielding
WO2015129546A1 (en) * 2014-02-25 2015-09-03 住友ベークライト株式会社 Electromagnetic shielding film, flexible printed substrate, substrate for mounting electronic component, and method for covering electronic component
JP6497009B2 (en) * 2014-09-16 2019-04-10 住友ベークライト株式会社 Electromagnetic wave shielding film
JP2015159214A (en) * 2014-02-25 2015-09-03 住友ベークライト株式会社 Electromagnetic wave shield film, and flexible printed board
CN104981138B (en) * 2014-04-10 2018-06-15 苏州驭奇材料科技有限公司 A kind of manufacturing method for being electromagnetically shielded heat dissipation film
JP6459019B2 (en) * 2014-05-22 2019-01-30 ナガセケムテックス株式会社 Sealed laminated sheet and method for manufacturing the same, mounting structure sealed using the laminated sheet for sealing, and method for manufacturing the same
JP2016006808A (en) * 2014-05-26 2016-01-14 住友ベークライト株式会社 Film for electromagnetic wave shield, and electronic component packaging substrate
JP6190528B2 (en) * 2014-06-02 2017-08-30 タツタ電線株式会社 Conductive adhesive film, printed circuit board, and electronic device
JP2016009809A (en) * 2014-06-26 2016-01-18 住友ベークライト株式会社 Film for electromagnetic wave shield and electronic component mounting board
CN106664815B (en) 2014-08-01 2019-04-12 华为技术有限公司 A kind of electromagnetic shielding material and the method for encapsulating optical module
TWI631889B (en) * 2014-12-27 2018-08-01 中原大學 Electromagnetic wave shielding composite film
JP6515559B2 (en) * 2015-02-06 2019-05-22 住友ベークライト株式会社 Film for electromagnetic wave shielding and electronic component mounting substrate
JP2017022319A (en) * 2015-07-14 2017-01-26 住友ベークライト株式会社 Electromagnetic wave shielding film, and electronic component mounting board
WO2017090623A1 (en) * 2015-11-25 2017-06-01 株式会社巴川製紙所 Matched-type electromagnetic wave absorber
JP2017118015A (en) 2015-12-25 2017-06-29 株式会社トーキン Electronic device and arrangement method of electromagnetic interference suppression body
JP6648626B2 (en) * 2016-04-27 2020-02-14 オムロン株式会社 Electronic device and method of manufacturing the same
JP6777423B2 (en) * 2016-04-28 2020-10-28 新科實業有限公司SAE Magnetics(H.K.)Ltd. Electronic component module and its manufacturing method
DE102017107230A1 (en) * 2016-05-02 2017-11-02 Toyota Motor Engineering & Manufacturing North America Inc. Omnidirectional red structural color of high chroma
JP2017216337A (en) * 2016-05-31 2017-12-07 Jnc株式会社 Electromagnetic wave suppression coating agent, electromagnetic wave suppression sheet, electromagnetic wave shield component, and electronic apparatus
JP2018060990A (en) * 2016-07-08 2018-04-12 住友ベークライト株式会社 Sealing film, method for sealing electronic component-mounted substrate, and electronic component-mounted substrate covered with sealing film
WO2018008657A1 (en) * 2016-07-08 2018-01-11 住友ベークライト株式会社 Sealing film, sealing method for electronic component mounted substrate, and electronic component mounted substrate coated with sealing film
CN106163247A (en) * 2016-07-18 2016-11-23 福建星宏新材料科技有限公司 A kind of wide frequency domain absorbing material
CN106131991B (en) * 2016-07-28 2022-09-16 杭州信多达智能科技有限公司 Wire coil assembly with surround shielding radiation function
JP2018060991A (en) * 2016-09-28 2018-04-12 住友ベークライト株式会社 Sealing film, method for sealing electronic component-mounted substrate, and sealing film-covered electronic component-mounted substrate
JP6865340B2 (en) * 2017-03-31 2021-04-28 ナガセケムテックス株式会社 Manufacturing method of mounting structure and laminated sheet used for this
JP2019029549A (en) * 2017-08-01 2019-02-21 住友ベークライト株式会社 Film set
JP6516108B2 (en) * 2017-08-10 2019-05-22 東洋インキScホールディングス株式会社 Electromagnetic wave shield laminate for vacuum forming, and electromagnetic wave shield molded body using the same
JP6451801B1 (en) * 2017-08-10 2019-01-16 東洋インキScホールディングス株式会社 Electromagnetic shielding film used for manufacturing method of electromagnetic shielding electronic device and manufacturing method of electromagnetic shielding electronic device
KR102530753B1 (en) * 2017-08-11 2023-05-10 삼성전자주식회사 Semiconductor package blocking electromagnetic interference and electronic system having the same
WO2019044512A1 (en) * 2017-08-31 2019-03-07 住友ベークライト株式会社 Electromagnetic wave shield film
JP7277092B2 (en) * 2017-08-31 2023-05-18 積水化学工業株式会社 release film
EP3726571A4 (en) 2017-12-14 2021-09-08 Nagase Chemtex Corporation Manufacturing method of mounting structure
JP2019119820A (en) * 2018-01-09 2019-07-22 住友ベークライト株式会社 Encapsulation film, encapsulation film coated electronic component loading substrate and re-detachment method
KR102616814B1 (en) * 2018-03-09 2023-12-21 삼성전자주식회사 Semiconductor package and semiconductor module
KR102016500B1 (en) 2018-04-02 2019-09-02 삼성전기주식회사 Coil Component
JP6504302B1 (en) * 2018-06-12 2019-04-24 東洋インキScホールディングス株式会社 Electromagnetic wave shield sheet, component mounting board, and electronic device
CN110691497B (en) * 2018-07-06 2024-04-23 广州方邦电子股份有限公司 Electromagnetic shielding film, circuit board and preparation method of electromagnetic shielding film
JP6497477B1 (en) * 2018-10-03 2019-04-10 東洋インキScホールディングス株式会社 Electromagnetic wave shield sheet and electronic component mounting board
CN113196895B (en) 2018-12-18 2023-12-15 东洋油墨Sc控股株式会社 Electronic component mounting board and electronic device
KR102094743B1 (en) * 2019-03-25 2020-03-30 고려대학교 산학협력단 Electromagnetic wave absorber
JP7236326B2 (en) * 2019-05-30 2023-03-09 東洋紡株式会社 Electronic component sealing body and method for manufacturing electronic component sealing body
DE102019118092A1 (en) * 2019-07-04 2021-01-07 Carl Freudenberg Kg Process for the production of a component shielded from electromagnetic radiation
JP2024013611A (en) * 2022-07-20 2024-02-01 Jx金属株式会社 Electromagnetic wave shielding material, covering material or outer casing material, and electric and electronic device

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000269632A (en) * 1999-03-17 2000-09-29 Tatsuta Electric Wire & Cable Co Ltd Shield flexible printed wiring board, manufacture thereof and reinforcing shield film therefor
JP2003273571A (en) * 2002-03-18 2003-09-26 Fujitsu Ltd High-frequency module for shielding inter-element radio wave interference
TW592035B (en) * 2003-04-25 2004-06-11 Optimax Tech Corp Shielding layer structure for electromagnetic wave and manufacturing method thereof
JP4689287B2 (en) * 2005-02-03 2011-05-25 北川工業株式会社 Contact and fixing method between shield case and conductive material
JP4319167B2 (en) * 2005-05-13 2009-08-26 タツタ システム・エレクトロニクス株式会社 Shield film, shield printed wiring board, shield flexible printed wiring board, shield film manufacturing method, and shield printed wiring board manufacturing method
JP2007173682A (en) * 2005-12-26 2007-07-05 Sumitomo Bakelite Co Ltd Electromagnetic wave absorbing film, circuit board, and manufacturing method thereof
JP5180826B2 (en) * 2006-06-27 2013-04-10 三井化学株式会社 Film and release film
JP2008292857A (en) * 2007-05-25 2008-12-04 Panasonic Electric Works Co Ltd Optical filter for pdp
JP5245497B2 (en) * 2008-03-31 2013-07-24 住友ベークライト株式会社 Release film
JP5093897B2 (en) * 2008-05-13 2012-12-12 サン・トックス株式会社 Coverlay film thermocompression sheet
JP5139156B2 (en) * 2008-05-30 2013-02-06 タツタ電線株式会社 Electromagnetic shielding material and printed wiring board
JP5272589B2 (en) * 2008-09-01 2013-08-28 住友ベークライト株式会社 Release film
KR101244022B1 (en) * 2008-09-04 2013-03-14 쓰리엠 이노베이티브 프로퍼티즈 캄파니 Electromagnetic interference suppressing hybrid sheet
CN102300910B (en) * 2008-11-28 2014-05-07 木本股份有限公司 Sheet with coating film and manufacturing method thereof
US9072204B2 (en) * 2009-07-17 2015-06-30 Panasonic Intellectual Property Management Co., Ltd. Electronic module and production method therefor
WO2011099252A1 (en) 2010-02-09 2011-08-18 住友ベークライト株式会社 Laminated film
JP5557152B2 (en) * 2010-02-09 2014-07-23 住友ベークライト株式会社 Laminated film
JP5619466B2 (en) * 2010-04-13 2014-11-05 デクセリアルズ株式会社 Curable resin composition, adhesive epoxy resin paste, die bond agent, non-conductive paste, adhesive epoxy resin film, non-conductive epoxy resin film, anisotropic conductive paste and anisotropic conductive film

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