WO2018008657A1 - Sealing film, sealing method for electronic component mounted substrate, and electronic component mounted substrate coated with sealing film - Google Patents

Sealing film, sealing method for electronic component mounted substrate, and electronic component mounted substrate coated with sealing film Download PDF

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Publication number
WO2018008657A1
WO2018008657A1 PCT/JP2017/024556 JP2017024556W WO2018008657A1 WO 2018008657 A1 WO2018008657 A1 WO 2018008657A1 JP 2017024556 W JP2017024556 W JP 2017024556W WO 2018008657 A1 WO2018008657 A1 WO 2018008657A1
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WO
WIPO (PCT)
Prior art keywords
electronic component
sealing film
substrate
sealing
component mounting
Prior art date
Application number
PCT/JP2017/024556
Other languages
French (fr)
Japanese (ja)
Inventor
明徳 橋本
雅彦 渡邊
白石 史広
Original Assignee
住友ベークライト株式会社
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Application filed by 住友ベークライト株式会社 filed Critical 住友ベークライト株式会社
Priority to JP2017553448A priority Critical patent/JP6358405B2/en
Publication of WO2018008657A1 publication Critical patent/WO2018008657A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • H05K3/28Applying non-metallic protective coatings
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00Screening of apparatus or components against electric or magnetic fields

Definitions

  • the present invention relates to a sealing film, an electronic component mounting substrate sealing method, and a sealing film-covered electronic component mounting substrate.
  • Sealing with such a resin includes, for example, a potting method in which a thermosetting resin such as a highly fluid urethane resin is injected and sealed after an electronic component mounting substrate is placed in a metal cavity.
  • a coating method is known in which a plastic resin is applied to an electronic component mounting substrate in a molten state and then solidified to be coated (sealed).
  • the potting method has a problem in that it takes time to cure the thermosetting resin, and usually requires a metal cavity for sealing, resulting in an increase in the weight of the resulting electronic device.
  • the coating method requires the viscosity management of the thermoplastic resin in a molten state, and there is a problem that time and labor are required for separately coating the thermoplastic resin coating area.
  • Patent Document 1 For the purpose of solving such problems, it has been proposed to attach a barrier film having hot melt properties to an electronic component mounting substrate (see, for example, Patent Document 1).
  • the barrier film may be provided with electromagnetic wave shielding properties for reducing the influence of noise caused by electromagnetic waves on the electronic component.
  • An object of the present invention is to provide excellent followability to unevenness caused by mounting of an electronic component provided on the electronic component mounting board and electromagnetic wave shielding property to reduce the influence of noise due to electromagnetic waves on the electronic component.
  • a sealing film that can be sealed in a sealed manner, a method for sealing an electronic component mounting substrate using such a sealing film, and a sealing film-covered electronic component mounting substrate provided with such a sealing film are provided. There is.
  • a sealing film used for sealing an electronic component mounting substrate comprising a substrate and an electronic component mounted on one surface side of the substrate, Having an insulating layer and an electromagnetic wave shielding layer laminated on one side of the insulating layer; Both the insulating layer and the electromagnetic wave shielding layer contain a resin material, and the sealing film has an elongation at a softening point required in accordance with JIS K 6251 of 150% or more and 3500% or less.
  • the electronic component mounting substrate further includes an electrode provided on one surface side of the substrate and electrically connected to the electronic component,
  • the said electromagnetic wave shielding layer is a film for sealing as described in said (1) provided with the protrusion part which protrudes beyond the edge part of the said insulating layer.
  • the sealing film further includes a coating layer laminated on the opposite side of the electromagnetic shielding layer from the insulating layer, The sealing film according to (1), wherein the electronic component mounting substrate is sealed with the insulating layer on one surface side of the substrate.
  • the coating layer includes a first protruding portion that protrudes beyond an end portion of the electromagnetic wave shielding layer, and the first electronic component mounting substrate is sealed when the electronic component mounting substrate is sealed from one surface side of the substrate.
  • the projecting portion is the sealing film according to (6), which is configured to cover the other surface side of the substrate by being folded on the other surface side of the substrate.
  • the electronic component mounting substrate further includes an electrode provided on one surface side of the substrate and electrically connected to the electronic component
  • the electromagnetic wave shielding layer includes a second protruding portion that protrudes beyond an end portion of the insulating layer, and when the electronic component mounting substrate is sealed from one surface side of the substrate, the second protruding portion is The sealing film according to (6) or (7), wherein the sealing film is configured to contact the electrode on one surface side of the substrate.
  • the electronic component mounting substrate further includes an electrode provided on the other surface side of the substrate and electrically connected to the electronic component
  • the electromagnetic wave shielding layer includes a second protruding portion that protrudes beyond an end portion of the insulating layer, and when the electronic component mounting substrate is sealed from one surface side of the substrate, the second protruding portion is The sealing film according to (6) or (7), wherein the film is configured to be in contact with the electrode on the other surface side of the substrate by being folded on the other surface side of the substrate.
  • the insulating layer includes a third protruding portion that protrudes beyond the end portion of the electromagnetic wave shielding layer and is stacked in contact with the first protruding portion, and the electronic component is provided from one surface side of the substrate.
  • the first projecting portion and the third projecting portion are folded to the other surface side of the substrate so that the third projecting portion is placed on the other surface side of the substrate.
  • the electronic component mounting substrate further includes an electrode provided on one surface side of the substrate and electrically connected to the electronic component,
  • the electromagnetic wave shielding layer includes a fourth projecting portion projecting beyond the end portion of the coating layer, and when sealing the electronic component mounting substrate from one surface side of the substrate, the fourth projecting portion is The sealing film according to (6), wherein the sealing film is configured to be in contact with the electrode on one surface side of the substrate by being folded on one surface side of the substrate.
  • the protruding portion covers the other surface side of the substrate by being folded into the other surface side of the substrate when the electronic component mounting substrate is sealed from the one surface side of the substrate.
  • the electronic component mounting substrate further includes a connection member having an open end surface and electrically connected to the electronic component,
  • the electronic component mounting substrate further includes an electrode provided on the other surface side of the substrate and electrically connected to the electronic component,
  • the electromagnetic wave shielding layer includes a protruding portion that protrudes beyond the end portion of the insulating layer, and when the electronic component mounting substrate is sealed from one surface side of the substrate, the protruding portion is formed on the substrate.
  • the sealing film according to (1) which is configured to be in contact with the electrode by being folded on the other surface side.
  • a sealing method of an electronic component mounting substrate for sealing the substrate, the electronic component, and the electrode using the sealing film according to any one of (2) to (5), Placing the sealing film on the electronic component mounting substrate with the insulating layer facing the electronic component mounting substrate so as to cover the substrate, the electronic component, and the electrode; Heating and softening the sealing film, and depressurizing; The step of sealing the substrate, the electronic component, and the electrode with the sealing film in a state where the protruding portion is in contact with the electrode by cooling and pressurizing the sealing film.
  • a method for sealing an electronic component mounting substrate comprising:
  • a sealing method for an electronic component mounting substrate for sealing the substrate and the electronic component using the sealing film according to any one of (12) to (14), Disposing the sealing film on the electronic component mounting substrate with the insulating layer facing the electronic component mounting substrate so as to cover the substrate and the electronic component; Heating and softening the sealing film, and depressurizing; By cooling and pressurizing the sealing film, the substrate and the electronic component are sealed with the sealing film while the electronic component is covered with the electromagnetic wave shielding layer through the insulating layer. And a step of stopping the electronic component mounting substrate.
  • a method for sealing an electronic component mounting substrate wherein the substrate, the electronic component, and the electrode are sealed using the sealing film according to any one of (17) to (19).
  • the projecting portion is placed on the other side of the substrate while the sealing film is disposed on the electronic component mounting substrate with the insulating layer facing the electronic component mounting substrate so as to cover the substrate and the electronic component.
  • the encapsulating film is composed mainly of a resin material, and the elongation rate of the encapsulating film at the softening point required in accordance with JIS K 6251 is 150% or more and 3500% or less. .
  • the sealing film is placed on the electronic component mounting substrate so as to cover the substrate and the electronic component. Thereafter, the sealing film is heated and softened, and the pressure is reduced. Thereafter, the sealing film is cooled and pressurized. Through the above steps, the sealing film covers the substrate and the electronic component in a state of sealing with excellent followability with respect to the unevenness formed by mounting the electronic component on the substrate. be able to.
  • the sealing film-covered electronic component mounting substrate obtained by coating this sealing film the electronic component (particularly, the electronic component) is accurately suppressed from coming into contact with external factors such as moisture and dust. Or it can be prevented. Further, when the substrate and the electronic component are covered with the sealing film, the electronic component is sealed with the electromagnetic wave shielding layer through the insulating layer, so that the obtained sealing film-covered electronic component mounting substrate is obtained. In this case, the influence of noise due to electromagnetic waves on the electronic component is appropriately suppressed or prevented.
  • FIG. 1 is a longitudinal sectional view showing a first embodiment of a sealing film of the present invention.
  • 2A to 2C are longitudinal sectional views for explaining a method for sealing an electronic component mounting substrate using the sealing film shown in FIG.
  • FIG. 3 is a longitudinal sectional view showing a second embodiment of the sealing film of the present invention.
  • 4A to 4C are longitudinal sectional views for explaining a method for sealing an electronic component mounting board using the sealing film shown in FIG.
  • FIG. 5 is a longitudinal sectional view showing a third embodiment of the sealing film of the present invention.
  • 6A to 6C are longitudinal sectional views for explaining a method for sealing an electronic component mounting substrate using the sealing film shown in FIG.
  • FIG. 7 is a longitudinal sectional view showing a fourth embodiment of the sealing film of the present invention.
  • FIGS. 8A to 8C are longitudinal sectional views for explaining a method for sealing an electronic component mounting board using the sealing film shown in FIG.
  • FIG. 9 is a longitudinal sectional view showing a fifth embodiment of the sealing film of the present invention.
  • FIGS. 10A to 10C are longitudinal sectional views for explaining a method for sealing an electronic component mounting board using the sealing film shown in FIG.
  • FIG. 11 is a longitudinal cross-sectional view which shows 6th Embodiment of the film for sealing of this invention.
  • 12 (a) to 12 (c) are longitudinal sectional views for explaining a method for sealing an electronic component mounting board using the sealing film shown in FIG.
  • FIG. 13 is a longitudinal cross-sectional view which shows 7th Embodiment of the film for sealing of this invention.
  • FIG. 14A to 14C are longitudinal sectional views for explaining a method of sealing an electronic component mounting board using the sealing film shown in FIG.
  • FIG. 15 is a longitudinal sectional view showing an eighth embodiment of the sealing film of the present invention.
  • 16 (a) to 16 (c) are longitudinal sectional views for explaining a method of sealing an electronic component mounting board using the sealing film shown in FIG.
  • FIG. 17 is a longitudinal cross-sectional view which shows 9th Embodiment of the film for sealing of this invention.
  • 18 (a) to 18 (c) are longitudinal sectional views for explaining a method of sealing an electronic component mounting board using the sealing film shown in FIG.
  • FIG. 19 is a longitudinal sectional view showing a tenth embodiment of the sealing film of the present invention.
  • FIGS. 20A to 20C are longitudinal sectional views for explaining a method of sealing an electronic component mounting board using the sealing film shown in FIG.
  • FIG. 21 is a longitudinal sectional view showing an eleventh embodiment of the sealing film of the present invention.
  • FIGS. 22A to 22C are longitudinal sectional views for explaining a method of sealing an electronic component mounting substrate using the sealing film shown in FIG.
  • FIGS. 23A and 23B are views showing a first reference form of the sealing film.
  • 24A to 24C are longitudinal sectional views for explaining a method for sealing an electronic component mounting board using the sealing film shown in FIG.
  • FIGS. 25A and 25B are views showing a twelfth embodiment of the sealing film of the present invention.
  • FIGS. 26A to 26C are longitudinal sectional views for explaining a method of sealing an electronic component mounting board using the sealing film shown in FIG.
  • FIGS. 27A and 27B are views showing a thirteenth embodiment of the sealing film of the present invention.
  • FIGS. 28A to 28C are longitudinal sectional views for explaining a method for sealing an electronic component mounting board using the sealing film shown in FIG.
  • FIGS. 29A and 29B are views showing a fourteenth embodiment of a sealing film of the present invention.
  • FIGS. 30A to 30C are longitudinal sectional views for explaining a method of sealing an electronic component mounting board using the sealing film shown in FIG.
  • FIGS. 31A and 31B are views showing a fifteenth embodiment of a sealing film of the present invention.
  • FIGS. 32 (a) to 32 (c) are longitudinal sectional views for explaining a method of sealing an electronic component mounting board using the sealing film shown in FIG.
  • FIGS. 33A and 33B are views showing a sixteenth embodiment of the sealing film of the present invention.
  • 34A to 34C are longitudinal sectional views for explaining a method of sealing an electronic component mounting board using the sealing film shown in FIG.
  • FIGS. 35A and 35B are views showing a seventeenth embodiment of the sealing film of the present invention.
  • 36 (a) to 36 (c) are longitudinal sectional views for explaining a method of sealing an electronic component mounting board using the sealing film shown in FIG.
  • FIGS. 37A and 37B are views showing an eighteenth embodiment of the sealing film of the present invention.
  • FIGS. 39A and 39B are views showing a nineteenth embodiment of a sealing film of the present invention.
  • 40A to 40C are longitudinal sectional views for explaining a method of sealing an electronic component mounting board using the sealing film shown in FIG. 41 (a) and 41 (b) are views showing a twentieth embodiment of the sealing film of the present invention.
  • 42 (a) to 42 (c) are longitudinal sectional views for explaining a method of sealing an electronic component mounting board using the sealing film shown in FIG.
  • FIG. 43 is a longitudinal sectional view showing a twenty-first embodiment of the sealing film of the present invention.
  • 44 (a) to 44 (c) are longitudinal sectional views for explaining a method of sealing an electronic component mounting board using the sealing film shown in FIG.
  • the sealing film of the present invention is a sealing film used for sealing an electronic component mounting substrate comprising a substrate and an electronic component mounted on one surface side of the substrate, and an insulating layer And an electromagnetic wave shielding layer laminated on one surface side of the insulating layer.
  • the insulating layer and the electromagnetic wave shielding layer both contain a resin material, and this sealing film conforms to JIS K 6251.
  • the elongation at the softening point determined in conformity is 150% or more and 3500% or less.
  • the sealing method of the electronic component mounting substrate of the present invention is a sealing method of the electronic component mounting substrate that covers the electronic component mounting substrate and the electronic component mounting substrate, using the sealing film described above.
  • a step of placing the sealing film on the electronic component mounting substrate with the insulating layer facing the electronic component mounting substrate so as to cover the substrate and the electronic component (placement step), and heating and softening the sealing film
  • the step of reducing pressure (heating / depressurization step) and the step of cooling the sealing film and pressurizing the substrate and the electronic component with the sealing film (cooling / pressurization step) It is characterized by having.
  • the softened sealing film is added in the cooling / pressurizing step. Since it cools in the pressed state, it can coat
  • the sealing film when the substrate and the electronic component are covered with the sealing film, the electronic component is sealed with the electromagnetic wave shielding layer through the insulating layer. Therefore, in the obtained film-covered electronic component mounting substrate for sealing, the influence of noise due to electromagnetic waves on the electronic component is accurately suppressed or prevented.
  • the sealing film is mounted on the substrate and the electronic component and the electrode are mounted on the substrate.
  • the substrate, the electronic component, and the electrode can be sealed (coated) with excellent followability to the unevenness formed. Also in this case, the above-described effects can be obtained.
  • FIG. 1 is a longitudinal sectional view showing a first embodiment of a sealing film of the present invention
  • FIGS. 2A to 2C are diagrams for sealing an electronic component mounting substrate using the sealing film of the present invention. It is a longitudinal cross-sectional view for demonstrating a method.
  • the upper side in FIGS. 1 and 2 is referred to as “upper” and the lower side is referred to as “lower”.
  • the sealing film 100 includes an insulating layer 12 and an electromagnetic wave shielding layer 13 laminated on one surface side (upper surface side) of the insulating layer 12, and both the insulating layer 12 and the electromagnetic wave shielding layer 13 are made of resin. It contains materials, and the elongation at the softening point required in accordance with JIS K 6251 is 150% or more and 3500% or less.
  • the sealing film 100 comprised by the laminated body provided with such an insulating layer 12 and the electromagnetic wave shielding layer 13 will be sufficient if the said elongation rate can satisfy
  • the resin material contained in the layer 13 may be composed of any material.
  • Such resin materials include, for example, low density polyethylene, high density polyethylene, ethylene copolymer, polyolefin resin such as stretched polypropylene and unstretched polypropylene, ionomer resin, polyethylene terephthalate, polyester resin such as polybutylene terephthalate, polycarbonate Resin, nylon-6, nylon-6,6, nylon-6,10, nylon-6T composed of hexamethylenediamine and terephthalic acid, nylon-6I composed of hexamethylenediamine and isophthalic acid, nonanediamine and terephthalic acid Nylon-9T, Nylon-M5T composed of methylpentadiamine and terephthalic acid, Nylon-6,12 composed of caprolactam and lauryllactam, Hexamethylenediamine and adipic acid
  • polyamide resins such as nylon-6 and nylon-6,6 made of prolactam
  • thermoplastic resins such as acrylic resins, styrene resins, polyvinyl chloride
  • the resin material contained in the insulating layer 12 and the electromagnetic wave shielding layer 13 may be a thermosetting resin such as an epoxy resin, a phenol resin, a melamine resin, or a silicone resin, an acrylic resin, A UV curable resin such as a urethane resin may be included.
  • a thermosetting resin such as an epoxy resin, a phenol resin, a melamine resin, or a silicone resin, an acrylic resin,
  • a UV curable resin such as a urethane resin may be included.
  • the insulating layer 12 is composed of a layer containing the resin material as a main material, and the electromagnetic wave shielding layer 13 is electrically conductive with the resin material. It is comprised by the layer containing the electroconductive particle provided with property.
  • the insulating layer 12 has insulating properties, and the electromagnetic wave shielding layer 13 has both conductivity and electromagnetic wave shielding properties.
  • the sealing film 100 including the insulating layer 12 containing the resin material as described above and the electromagnetic wave shielding layer 13 includes a layer containing a polyolefin-based resin as the resin material, among the insulating layer 12 and the electromagnetic wave shielding layer 13. It is preferable to provide as at least one layer. Thereby, the elongation at the softening point of the sealing film 100 can be easily set to 150% or more and 3500% or less.
  • an insulating layer 12 containing the resin material as a main material and an electromagnetic wave shielding layer 13 containing the resin material and conductive particles are provided, and the resin material contained in the insulating layer 12 is a polyolefin resin.
  • An example of the sealing film 100 will be described.
  • the sealing film 100 includes an electromagnetic wave shielding layer 13 and an insulating layer 12, which are on the opposite side (upper surface) of the electronic component mounting substrate 45 to be covered. (Side) from the side, it is comprised with the laminated body laminated
  • the electromagnetic wave shielding layer 13 is formed larger than the insulating layer 12, and an end portion thereof is exposed from an end portion (edge portion) of the insulating layer 12.
  • the electromagnetic wave shielding layer 13 includes the protruding portion 15 formed by protruding beyond the end portion of the insulating layer 12.
  • the electronic component mounting substrate 45 covered with the sealing film 100 includes the substrate 5, the electronic component 4 mounted (mounted) on the center of the upper surface (one surface) of the substrate 5, and the electronic component. 4 and an electrode 3 formed on the end of the upper surface of the substrate 5.
  • the unevenness 6 including the convex portions 61 and the concave portions 62 is formed on the substrate 5.
  • the substrate 5 include a printed wiring board.
  • the electronic component 4 mounted on the substrate 5 include a semiconductor element, a capacitor, a coil, a connector, and a resistor.
  • an electrode for connecting to a power source for supplying electricity from the outside, an electrode for electrically connecting to another electronic component, a ground electrode for grounding the electronic component 4 and the like can be mentioned.
  • the insulating layer 12 has an elongation at the softening point of the sealing film 100 set to 150% or more and 3500% or less, for the purpose of having excellent adhesion to the irregularities 6 and excellent shape followability.
  • the layer contains an ethylene-vinyl acetate copolymer as a polyolefin resin (ethylene copolymer) as a main material.
  • the insulating layer 12 is a layer having insulation properties by containing an ethylene-vinyl acetate copolymer as a resin material as a main material.
  • the insulating layer 12 is interposed between the electronic component 4 and the electromagnetic wave shielding layer 13 having conductivity when the electronic component mounting substrate 45 is covered with the sealing film 100, so that the electronic components 4, Functions as a layer for preventing a short circuit between the electronic component 4 and the electrode 3.
  • the VA content to be copolymerized is preferably 5% by weight to 30% by weight, and more preferably 10% by weight to 20% by weight. If it is less than the lower limit, it may be difficult to set the elongation at the softening point of the sealing film 100 within the above range. On the other hand, if the upper limit is exceeded, the crystal part of the resin constituting the insulating layer 12 decreases and the non-crystalline part tends to increase, so that the antioxidant remaining in the insulating layer 12 Such additives may be eluted. For this reason, the electronic component mounting board 45 side is shifted, and as a result, there is a possibility that the characteristics of the electronic component 4 may be inconvenient.
  • the average thickness of the insulating layer 12 is preferably 5 ⁇ m or more and 200 ⁇ m or less, and more preferably 20 ⁇ m or more and 120 ⁇ m or less.
  • the elongation at the softening point of the sealing film 100 can be reliably set within a range of 150% to 3500%.
  • the insulation of the electromagnetic wave shielding layer 13 with respect to the electronic component 4 can be more reliably ensured.
  • the resin material contained in the insulating layer 12 may be an ionomer resin contained in the electromagnetic wave shielding layer 13 described later, in addition to an ethylene-vinyl acetate copolymer as a polyolefin resin (ethylene copolymer). Further, a polyolefin resin other than the ethylene-vinyl acetate copolymer may be used.
  • the electromagnetic wave shielding layer 13 has an elongation at the softening point of the sealing film 100 set to 150% or more and 3500% or less, and has excellent adhesion to the unevenness 6 and shape followability,
  • an ionomer resin is contained as a resin material.
  • the resin material (ionomer) also functions as a binder that holds the following conductive material in the layer.
  • the electromagnetic wave shielding layer 13 is a layer having conductivity and electromagnetic wave shielding properties by further containing conductive particles having conductivity in addition to the ionomer resin as a resin material.
  • the electromagnetic wave shielding layer 13 is formed larger than the insulating layer 12, and the insulating layer 12 is laminated at the center portion thereof, but is formed by protruding beyond the end portion of the insulating layer 12 at the end portion.
  • the protrusion part 15 is provided.
  • the electronic component mounting substrate 45 When the electronic component mounting substrate 45 is covered with the sealing film 100 by such an electromagnetic wave shielding layer 13, the electronic component 4 is covered through the insulating layer 12 at the center. Therefore, the influence of noise due to electromagnetic waves on the electronic component 4 is accurately suppressed or prevented in the sealing film-covered electronic component mounting substrate 50 obtained by covering the electronic component mounting substrate 45 with the sealing film 100. Can be. Further, at the end portion of the electromagnetic wave shielding layer 13, the insulating projecting portion 15 directly covers the electrode 3 without the insulating layer 12, so that the electrode 3 becomes the projecting portion 15 (the electromagnetic shielding layer 13). Electrically connected. Therefore, in the obtained film-covered electronic component mounting substrate 50 for sealing, it is possible to ensure electrical connection between the electrode 3 and the outside via the protruding portion 15.
  • the ionomer resin as the resin material means a binary copolymer containing ethylene and (meth) acrylic acid as a constituent component of the polymer, ethylene, (meth) acrylic acid and (meta )
  • a resin obtained by crosslinking a terpolymer having an acrylic ester as a constituent of a polymer with a metal ion, and one or two of them can be used in combination.
  • Examples of the metal ion include potassium ion (K + ), sodium ion (Na + ), lithium ion (Li + ), magnesium ion (Mg ++ ), and zinc ion (Zn ++ ).
  • potassium ion (K + ) sodium ion (Na + ), lithium ion (Li + ), magnesium ion (Mg ++ ), and zinc ion (Zn ++ ).
  • sodium ions (Na + ) or zinc ions (Zn ++ ) are preferable.
  • a binary copolymer having ethylene and (meth) acrylic acid as constituent components of the polymer or a ternary copolymer having ethylene, (meth) acrylic acid and (meth) acrylic acid ester as constituent components of the polymer.
  • the degree of neutralization by the cation (metal ion) in the carboxyl group of the polymer is preferably 40 mol% or more and 75 mol% or less.
  • the conductive particles are not particularly limited as long as they can impart both conductivity and electromagnetic wave shielding properties to the electromagnetic wave shielding layer 13.
  • metal oxides such as ferrite, ITO, ATO, and FTO represented by metals such as alloys containing AFe 2 O 4 (wherein A is Mn, Co, Ni, Cu, or Zn) Etc. are included, and one or more of these can be used in combination.
  • the conductive particles include those containing such metals and / or metal oxides, conductive polymers such as polyacetylene, polypyrrole, polythiophene, polyaniline, poly (p-phenylene) and polyfluorene, carbon nanotubes, It may contain a carbon-based material such as carbon nanofiber or carbon black.
  • the average particle diameter of the conductive particles is preferably 1.0 ⁇ m or more and 10.0 ⁇ m or less, and more preferably 3.0 ⁇ m or more and 8.0 ⁇ m or less.
  • the conductive particles can be uniformly dispersed in the electromagnetic wave shielding layer 13. Therefore, the electromagnetic wave shielding layer 13 can exhibit its characteristics uniformly.
  • the content of the conductive particles in the electromagnetic wave shielding layer 13 is preferably 10% by weight or more and 95% by weight or less, and more preferably 50% by weight or more and 90% by weight or less.
  • the average thickness of the electromagnetic wave shielding layer 13 is preferably 1 ⁇ m or more and 400 ⁇ m or less, and more preferably 5 ⁇ m or more and 200 ⁇ m or less.
  • the sealing film 100 is excellent in toughness, and the elongation at the softening point of the sealing film 100 is 150% or more and 3500% or less. It can be reliably set within the range. Furthermore, both the conductivity and the electromagnetic wave shielding property can be reliably imparted to the electromagnetic wave shielding layer 13.
  • the resin material contained in the electromagnetic wave shielding layer 13 may be an ionomer resin, an ethylene-vinyl acetate copolymer contained in the insulating layer 12, or other polyolefin resin.
  • an adhesive layer may be provided between the insulating layer 12 and the electromagnetic wave shielding layer 13 as necessary in order to impart adhesiveness or to improve adhesiveness. it can. Moreover, in order to improve the adhesiveness between the insulating layer 12 and the electronic component mounting substrate 45, an adhesive layer can be provided inside the insulating layer 12 as necessary.
  • Examples of the adhesive resin contained in the adhesive layer include EVA, ethylene-maleic anhydride copolymer, EAA, EEA, ethylene-methacrylate-glycidyl acrylate terpolymer, or various polyolefins such as acrylic acid, methacrylic acid, Monobasic unsaturated fatty acids such as acids, dibasic unsaturated fatty acids such as maleic acid, fumaric acid, itaconic acid or the like grafted with these anhydrides, such as maleic acid grafted EVA, maleic acid grafted ethylene
  • Known adhesive resins and adhesive resins such as - ⁇ -olefin copolymers, styrene elastomers and acrylic resins can be used as appropriate.
  • the production method for producing the sealing film 100 in which the electromagnetic wave shielding layer 13 and the insulating layer 12 are laminated is not particularly limited.
  • the sealing film 100 as a multilayer body including the electromagnetic wave shielding layer 13 and the insulating layer 12 having the above-described configuration, the elongation at the softening point of the sealing film 100 is relatively easy. Although it can be set to 150% or more and 3500% or less, this elongation may be 150% or more and 3500% or less, but it is preferably 150% or more and 2000% or less, and 1000% or more and 2000% or less. More preferably. As a result, when the sealing film 100 is used to coat the unevenness 6 included in the electronic component mounting substrate 45, it can be covered in a state of being sealed with excellent followability to the shape of the unevenness 6. It is possible to accurately suppress or prevent the sealing film 100 from being broken in the middle.
  • membrane for sealing 100 can be made to follow the shape of the irregularities 6.
  • the elongation at break (elongation at the softening point) can be measured according to the method described in JIS K 6251 using an autograph apparatus (for example, AUTOGRAPH AGS-X manufactured by Shimadzu Corporation). it can.
  • the softening point of the sealing film 100 is determined by using a dynamic viscoelasticity measuring apparatus (for example, EXSTAR6000 manufactured by Seiko Instruments Inc.), a distance between chucks of 20 mm, a heating rate of 5 ° C./min, and an angular frequency of 10 Hz. It can be measured under the following conditions.
  • a dynamic viscoelasticity measuring apparatus for example, EXSTAR6000 manufactured by Seiko Instruments Inc.
  • the linear expansion coefficient in the temperature range of 25 ° C. or more and 80 ° C. or less of the sealing film 100 is preferably 100 ppm / K or less, and more preferably 5 ppm / K or more and 50 ppm / K or less.
  • the sealing film 100 is excellent when the sealing film 100 is heated. Since it has elasticity, the shape followability to the unevenness 6 of the sealing film 100 can be improved more reliably. Furthermore, since excellent adhesiveness can be maintained among the sealing film 100, the substrate 5, the electronic component 4, and further the electrode 3, it is generated by repeatedly driving the electronic component mounting substrate 45.
  • the peeling from the electronic component mounting substrate 45 of the sealing film 100 due to heat generation can be suppressed or prevented more accurately.
  • the linear expansion coefficient of the sealing film 100 can be calculated using, for example, a dynamic viscoelasticity measuring apparatus (for example, EXSTAR6000 manufactured by Seiko Instruments Inc.).
  • the average thickness of the sealing film 100 as a whole is preferably 10 ⁇ m or more and 700 ⁇ m or less, and more preferably 20 ⁇ m or more and 400 ⁇ m or less. By setting the average thickness of the sealing film 100 within this range, the sealing film 100 can be accurately suppressed or prevented from breaking in the middle of the sealing film 100, and for sealing. The elongation at the softening point of the film 100 can be reliably set within a range of 150% to 3500%.
  • the electronic component mounting substrate sealing method of the present embodiment includes a step of placing the sealing film 100 on the electronic component mounting substrate 45 so as to cover the substrate 5, the electronic component 4, and the electrode 3,
  • the sealing film 100 is heated and softened, and the pressure reducing process (heating / depressurizing process) and the sealing film 100 are cooled and pressurized to seal the substrate 5, the electronic component 4, and the electrode 3.
  • the sealing film 100 that is, the electromagnetic wave shielding layer 13 and the insulating layer 12 are softened.
  • the electronic component 4 and the electrode 3 are mounted on the substrate 5. It will be in the state which can follow the shape of the unevenness
  • the electronic component mounting substrate 45 and the sealing film 100 are arranged in a reduced-pressure atmosphere, so that not only the upper side of the sealing film 100 but also the electronic component mounting substrate 45 and the sealing film 100 The gas (air) in between is degassed.
  • the shape of the irregularities 6, that is, the shape of the electronic component 4 and the electrode 3 on the substrate 5 is slightly followed.
  • the sealing film 100 can be made to follow the shape of the unevenness 6 formed on the electronic component mounting substrate 45.
  • the heating of the sealing film 100 and the reduced pressure of the atmosphere may be reduced after the heating or may be heated after the reduced pressure, but it is preferable to perform the heating and the reduced pressure almost simultaneously. Thereby, the softened film 100 for sealing can be made into the state which followed the shape of the unevenness
  • the space between the electronic component mounting substrate 45 and the sealing film 100 is degassed, and the decompressed state is maintained.
  • the sealing film 100 is further extended.
  • the sealing film 100 is softened in a state in which the shape of the unevenness 6 (the shape of the electronic component 4 and the electrode 3) follows with an excellent degree of adhesion (air density).
  • the substrate 5, the electronic component 4, and the electrode 3 are covered with the film 100 for use.
  • the pressing step can be omitted if the sealing film 100 sufficiently follows the shape of the irregularities 6.
  • the elongation at the softening point of the sealing film 100 is 150% or more and 3500% or less. Therefore, since the sealing film 100 can be extended with better shape followability with respect to the unevenness 6 formed on the electronic component mounting substrate 45 during this pressurization, the sealing film in a softened state By 100, the board
  • a mounting substrate 50 is obtained. Therefore, in this film-covered electronic component mounting substrate 50 for sealing, it is possible to accurately suppress or prevent the external component such as moisture and dust from contacting the electronic component 4 and the electrode 3. Accordingly, the reliability of the obtained electronic device including the sealing film-covered electronic component mounting substrate 50 and thus the sealing film-covered electronic component mounting substrate 50 can be improved.
  • the sealing film 100 used for covering the electronic component mounting substrate 45 as described above is composed of a laminate of the insulating layer 12 and the electromagnetic wave shielding layer 13, and the electromagnetic wave shielding layer 13 is composed of the insulating layer 12.
  • the insulating layer 12 is formed at a central portion of the insulating layer 12.
  • the protruding portion 15 is formed at the end portion so as to protrude beyond the end portion of the insulating layer 12.
  • the electronic component 4 is covered with the insulating layer 12 in the central portion of the electromagnetic wave shielding layer 13. Therefore, in the obtained film-covered electronic component mounting substrate 50 for sealing, the influence of noise due to electromagnetic waves on the electronic component 4 can be accurately suppressed or prevented.
  • the insulating projecting portion 15 directly covers the electrode 3 without the insulating layer 12, so that the electrode 3 becomes the projecting portion 15 (the electromagnetic shielding layer 13). Electrically connected. Therefore, in the obtained film-covered electronic component mounting substrate 50 for sealing, it is possible to ensure electrical connection between the electrode 3 and the outside via the protruding portion 15.
  • cooling of the film 100 for sealing and pressurization of an atmosphere may be cooled after pressurization, it is preferable to perform cooling and pressurization substantially simultaneously.
  • the film 100 for sealing can be coat
  • FIG. 3 is a longitudinal sectional view showing a second embodiment of the sealing film of the present invention
  • FIGS. 4 (a) to 4 (c) show the sealing of the electronic component mounting substrate using the sealing film shown in FIG. It is a longitudinal cross-sectional view for demonstrating the stopping method.
  • the upper side in FIGS. 3 and 4A to 4C is referred to as “upper” and the lower side is referred to as “lower”.
  • the film 100 for sealing is further provided with the coating layer 14 laminated
  • the electronic component mounting substrate 45 covered with the sealing film 100 is mounted on the substrate 5 and the central portion on the upper surface (one surface) side of the substrate 5 as shown in FIG.
  • the electronic component 4 is placed (placed).
  • the mounting of the electronic component 4 on the upper surface of the substrate 5 forms the unevenness 6 including the convex portions 61 and the concave portions 62 on the substrate 5.
  • the substrate 5 include a printed wiring board
  • examples of the electronic component 4 mounted on the substrate 5 include a semiconductor element, a capacitor, a coil, a connector, and a resistor.
  • the electromagnetic wave shielding layer 13 is ensured to be insulated from the electronic component 4. Further, the electromagnetic wave shielding layer 13 is covered with a covering layer 14 on the surface opposite to the electronic component 4. For this reason, the electromagnetic wave shielding layer 13 is also provided with insulation against other electronic components located outside the obtained sealing film-covered electronic component mounting substrate 50.
  • the covering layer 14 of such a sealing film 100 contains a resin material in the same manner as the insulating layer 12 and the electromagnetic wave shielding layer 13 described above. Further, as in the first embodiment described above, the elongation at the softening point of the sealing film 100 determined in accordance with JIS K 6251 is 150% or more and 3500% or less, but 150% or more and 2000% or less. It is preferable that it is 1000% or more and 2000% or less.
  • the softening point of the sealing film 100 is within such a range, when the sealing film 100 is used to cover the unevenness 6 included in the electronic component mounting substrate 45, the shape of the unevenness 6 is reduced. It can coat
  • the sealing film 100 can be made to follow the shape of the irregularities 6.
  • the covering layer 14 included in the sealing film 100 having an elongation at the softening point of 150% or more and 3500% or less contains a resin material, like the insulating layer 12 and the electromagnetic wave shielding layer 13 described above. .
  • a resin material the same resin material as the insulating layer 12 and the electromagnetic wave shielding layer 13 described above can be used.
  • the resin material contained in each of the insulating layer 12, the electromagnetic wave shielding layer 13, and the coating layer 14 can set the elongation at the softening point of the sealing film 100 to 150% or more and 3500% or less, It may be the same or different.
  • the coating layer 14 is comprised by the layer which contains the said resin material as a main material, and the electromagnetic wave shield layer 13 is comprised by the layer containing the said resin material and the electroconductive particle provided with the said electroconductivity.
  • the sealing film 100 including the insulating layer 12, the electromagnetic wave shielding layer 13, and the covering layer 14 each including the resin material having the above-described configuration includes a polyolefin resin as the resin material among the resin materials described above.
  • the layer to be contained is preferably provided as at least one of the insulating layer 12, the electromagnetic wave shielding layer 13, and the coating layer. Thereby, the elongation at the softening point of the sealing film 100 can be set to 150% or more and 3500% or less more reliably.
  • the sealing film 100 in which the resin materials included in the insulating layer 12 and the covering layer 14 are both polyolefin-based resins will be described as an example.
  • the elongation at the softening point of the sealing film 100 is set to 150% or more and 3500% or less, and the coating layer 14 is excellent in adhesion to the unevenness 6 and shape followability.
  • the layer contains an ethylene-vinyl acetate copolymer as a polyolefin resin (ethylene copolymer) as a main material.
  • the coating layer 14 is a layer having an insulating property by containing an ethylene-vinyl acetate copolymer as a resin material as a main material.
  • an ethylene-vinyl acetate copolymer as a resin material as a main material.
  • the VA content to be copolymerized is set within the same range as the VA content to be copolymerized shown in the insulating layer 12 described above.
  • the average thickness of the coating layer 14 is preferably 5 ⁇ m or more and 200 ⁇ m or less, and more preferably 20 ⁇ m or more and 120 ⁇ m or less.
  • the average thickness of the covering layer 14 can be set within such a range.
  • the elongation at the softening point of the sealing film 100 can be reliably set within a range of 150% or more and 3500% or less.
  • the insulation of the electromagnetic wave shielding layer 13 with respect to the electronic component located outside the sealing film-covered electronic component mounting substrate 50 can be more reliably ensured.
  • the resin material contained in the coating layer 14 is contained in the electromagnetic wave shielding layer 13 as well as the ethylene-vinyl acetate copolymer as a polyolefin resin (ethylene copolymer), as in the case of the insulating layer 12. It may be an ionomer resin or a polyolefin resin other than an ethylene-vinyl acetate copolymer.
  • the sealing film 100 in order to provide adhesiveness between the insulating layer 12 and the electromagnetic wave shielding layer 13, and between the electromagnetic wave shielding layer 13 and the coating layer 14, or to improve adhesiveness. If necessary, an adhesive layer may be provided. Further, in order to improve the adhesion between the insulating layer 12 and the electronic component mounting substrate 45, the first embodiment described above may be provided inside the insulating layer 12, that is, between the insulating layer 12 and the substrate 5, as necessary. It is also possible to provide an adhesive layer similar to the above.
  • a manufacturing method for manufacturing the sealing film 100 in which the insulating layer 12, the electromagnetic wave shielding layer 13, and the coating layer 14 are laminated is not particularly limited.
  • a known coextrusion method, dry lamination method, extrusion It can be obtained by film formation and lamination using a lamination method, coating lamination, or the like.
  • the sealing film 100 as a multilayer body including the insulating layer 12, the electromagnetic wave shielding layer 13, and the coating layer 14 having the above-described configuration, the elongation at the softening point of the sealing film 100 can be increased. It can be set to 150% or more and 3500% or less relatively easily.
  • the linear expansion coefficient in the temperature range of 25 ° C. to 80 ° C. of the sealing film 100 is preferably 100 ppm / K or less.
  • the sealing film 100 has excellent stretchability when the sealing film 100 is heated.
  • the shape followability to the unevenness 6 of the film 100 can be improved more reliably.
  • excellent adhesion can be maintained between the sealing film 100 and the substrate 5 and further the electronic component 4, the sealing caused by the heat generated by repeatedly driving the electronic component mounting substrate 45 is achieved.
  • the peeling from the electronic component mounting substrate 45 of the stop film 100 can be suppressed or prevented more accurately.
  • the average thickness of the sealing film 100 as a whole is preferably 10 ⁇ m or more and 700 ⁇ m or less, and more preferably 20 ⁇ m or more and 400 ⁇ m or less. By setting the average thickness of the sealing film 100 within this range, the sealing film 100 can be accurately suppressed or prevented from breaking in the middle of the sealing film 100, and for sealing. The elongation at the softening point of the film 100 can be reliably set within a range of 150% to 3500%.
  • the electronic component mounting substrate sealing method of this embodiment is such that the sealing film 100 is placed on the electronic component mounting substrate 45 with the insulating layer 12 facing the electronic component mounting substrate 45 so as to cover the substrate 5 and the electronic component 4. And placing the substrate 5 and the electronic component 4 together by heating and softening the sealing film 100, heating and decompressing the sealing film 100, and cooling and pressurizing the sealing film 100. And a cooling / pressurizing step of sealing with the sealing film 100.
  • the electronic component mounting substrate 45 and the sealing film 100 are arranged in a reduced-pressure atmosphere, so that not only the outside of the sealing film 100 but also the electronic component mounting substrate 45 and the sealing film 100 The gas (air) in between is degassed.
  • the shape of the unevenness 6, that is, the shape of the electronic component 4 on the substrate 5 is slightly followed on the upper side of the substrate 5.
  • the sealing film 100 can be made to follow the shape of the irregularities 6 formed on the upper surface side of the electronic component mounting substrate 45.
  • the heating of the sealing film 100 and the reduced pressure of the atmosphere may be reduced after the heating or may be heated after the reduced pressure, but it is preferable to perform the heating and the reduced pressure almost simultaneously. Thereby, the softened film 100 for sealing can be made into the state which followed the shape of the unevenness
  • the space between the electronic component mounting substrate 45 and the sealing film 100 is degassed, and the decompressed state is maintained.
  • the sealing film 100 is further extended.
  • the substrate 5 and the electronic component are formed by the softened sealing film 100 in a state in which the shape of the unevenness 6 (the shape of the electronic component 4) follows with an excellent degree of adhesion (density). 4 are coated.
  • the sealing film 100 sufficiently follows the shape of the irregularities 6, the pressing step can be omitted.
  • the elongation at the softening point of the sealing film 100 is 150% or more and 3500% or less. Therefore, the sealing film 100 can be extended with better shape followability to the unevenness 6 formed on the electronic component mounting substrate 45 at the time of pressurization. Therefore, the substrate 5 and the electronic component 4 can be coated on the upper side of the substrate 5 with excellent adhesion by the softened sealing film 100.
  • the sealing film 100 is cooled in a state where the substrate 5 and the electronic component 4 are coated with excellent adhesion (airtightness) by the sealing film 100, and the sealing film 100 is maintained while maintaining this state.
  • the stop film 100 is solidified.
  • the substrate 5 and the electronic component 4 are in contact with the insulating layer 12 on the upper side of the substrate 5 by the sealing film 100 while following the shape of the unevenness 6 formed on the electronic component mounting substrate 45.
  • the coated sealing film-covered electronic component mounting substrate 50 is obtained. Therefore, in the sealing film-covered electronic component mounting substrate 50, it is possible to accurately suppress or prevent the electronic component 4 from coming into contact with external factors such as moisture and dust. Accordingly, the reliability of the obtained electronic device including the sealing film-covered electronic component mounting substrate 50 and thus the sealing film-covered electronic component mounting substrate 50 can be improved.
  • the sealing film 100 used for covering the electronic component mounting substrate 45 as described above is composed of a laminate of the insulating layer 12, the electromagnetic wave shielding layer 13, and the covering layer 14.
  • the electronic component 4 is covered with the electromagnetic wave shielding layer 13 through the insulating layer 12. Therefore, the obtained film-covered electronic component mounting substrate 50 for sealing can be one in which the influence of noise due to electromagnetic waves on the electronic component 4 is appropriately suppressed or prevented.
  • the electromagnetic wave shielding layer 13 covers the electronic component 4 in a state in which insulation against the electronic component 4 is ensured. be able to. Moreover, since the electromagnetic wave shielding layer 13 is covered with the coating layer 14 on the surface opposite to the electronic component 4, the electromagnetic wave shielding layer 13 is disposed outside the obtained film-covered electronic component mounting substrate 50 for sealing.
  • the electronic component mounting substrate 45 can be covered with insulation of other electronic components that are positioned.
  • cooling of the film 100 for sealing and pressurization of an atmosphere may be cooled after pressurization, it is preferable to perform cooling and pressurization substantially simultaneously.
  • the film 100 for sealing can be coat
  • the sealing film-covered electronic component mounting substrate 50 in which the substrate 5 and the electronic component 4 are covered with the sealing film 100 can be obtained.
  • FIG. 5 is a longitudinal sectional view showing a third embodiment of the sealing film of the present invention
  • FIGS. 6 (a) to 6 (c) show the sealing of the electronic component mounting substrate using the sealing film shown in FIG. It is a longitudinal cross-sectional view for demonstrating the stopping method.
  • the upper side in FIGS. 5 and 6 is referred to as “upper” and the lower side is referred to as “lower”.
  • the structure of the coating layer 14 with which the film 100 for sealing is provided differs, and other than that is the same as that of the said 2nd Embodiment.
  • the covering layer 14 is formed larger than the electromagnetic shielding layer 13, and the end thereof is the end (edge) of the electromagnetic shielding layer 13. Exposed).
  • the coating layer 14 includes the protruding portion 15 (first protruding portion) formed by protruding beyond the end portion of the electromagnetic wave shielding layer 13.
  • the insulating layer 12 is on the lower side and the covering layer 14 is on the upper side.
  • the electronic component 4 is sealed with the electromagnetic wave shielding layer 13 through the insulating layer 12.
  • the projecting portion 15 included in the coating layer 14 is configured to be able to be folded to the lower surface (the other surface) side of the substrate 5 at the time of coating using the sealing film 100.
  • the end portion 51 on the lower surface of the substrate 5 can be covered with the protruding portion 15. Therefore, the sealing film 100 according to the present embodiment can cover not only the upper surface side of the substrate 5 but also the end portion 51 on the lower surface of the substrate 5 with the coating layer 14, and the electronic component with better airtightness.
  • the mounting substrate 45 can be covered. Therefore, in the sealing film-covered electronic component mounting substrate 50 obtained by covering with the sealing film 100, the electronic component 4 on the substrate 5 is more accurately suppressed from coming into contact with external factors such as moisture and dust. Or it can be prevented.
  • the elongation at the softening point of the sealing film 100 is 150% or more and 3500% or less.
  • the linear expansion coefficient in the temperature range of 25 ° C. to 80 ° C. of the sealing film 100 is preferably 100 ppm / K or less.
  • the length of the protrusion part 15 of the coating layer 14 which protrudes beyond the edge part of the electromagnetic wave shield layer 13 in the film 100 for sealing is not specifically limited, It may be 0.1 cm or more and 5.0 cm or less. Preferably, it is 0.5 cm or more and 2.5 cm or less.
  • the protruding portion 15 can reach the end portion 51 on the lower surface of the substrate 5 while being folded from the upper surface side of the substrate 5 to the lower surface side. It is possible to reliably realize the covering of the end portion 51 by the protruding portion 15.
  • the electronic component mounting substrate sealing method of this embodiment is such that the sealing film 100 is placed on the electronic component mounting substrate 45 with the insulating layer 12 facing the electronic component mounting substrate 45 so as to cover the substrate 5 and the electronic component 4. And placing the protruding portion 15 in contact with the end portion 51 on the lower surface of the substrate 5 by folding the protruding portion 15 toward the lower surface (the other surface) of the substrate 5 and heating and softening the sealing film 100.
  • the substrate 5 and the electronic component 4 are brought into contact with the end portion 51 on the lower surface of the substrate 5 by cooling and pressurizing the heating film / depressurization step for reducing the pressure and the sealing film 100. And a cooling / pressurizing step of sealing with the sealing film 100.
  • the sealing film 100 that is, the insulating layer 12, the electromagnetic wave shielding layer 13, and the coating layer 14 are softened.
  • the sealing film 100 that is, the insulating layer 12, the electromagnetic wave shielding layer 13, and the coating layer 14 are softened.
  • the sealing film 100 on the upper surface side of the substrate 5, It will be in the state which can follow the shape of the unevenness
  • the electronic component mounting substrate 45 and the sealing film 100 are arranged in a reduced-pressure atmosphere, so that not only the outside of the sealing film 100 but also the electronic component mounting substrate 45 and the sealing film 100 The gas (air) in between is degassed.
  • the sealing film 100 is extended, the shape of the unevenness 6 on the upper side of the substrate 5, that is, the shape of the electronic component 4 on the substrate 5 is slightly followed.
  • the part 51 is slightly covered.
  • the sealing film 100 can be made to follow the shape of the unevenness 6 formed on the upper surface side of the electronic component mounting substrate 45, and the protrusion 15 is folded to the lower surface side of the substrate 5, The end portion 51 can be covered.
  • the space between the electronic component mounting substrate 45 and the sealing film 100 is degassed, and the decompressed state is maintained.
  • the sealing film 100 is further extended.
  • the upper side of the substrate 5 follows the shape of the unevenness 6 (the shape of the electronic component 4) with an excellent degree of adhesion (air density), and further covers the end portion 51 with an excellent degree of adhesion.
  • the substrate 5 and the electronic component 4 are covered with the sealing film 100 in a softened state.
  • the elongation at the softening point of the sealing film 100 is 150% or more and 3500% or less.
  • the film 100 for sealing can be extended with the more excellent shape followability with respect to the unevenness
  • the sealing film 100 is cooled with the sealing film 100 in a state where the substrate 5 and the electronic component 4 are covered with the end 51 with excellent adhesion (airtightness).
  • the sealing film 100 is solidified while maintaining the state.
  • the substrate 5 and the electronic component 4 are in contact with the insulating layer 12 on the upper side of the substrate 5 by the sealing film 100 while following the shape of the irregularities 6 formed on the electronic component mounting substrate 45.
  • the sealing film-covered electronic component mounting substrate 50 is obtained in a state where the projecting portion 15 of the folded covering layer 14 covers the end portion 51 on the lower side of the substrate 5. Therefore, in the sealing film-covered electronic component mounting substrate 50, it is possible to more accurately suppress or prevent the external component such as moisture and dust from contacting the electronic component 4 and the electrode 3. Therefore, the reliability of the obtained electronic device including the sealing film-covered electronic component mounting substrate 50 and thus the sealing film-covered electronic component mounting substrate 50 can be improved.
  • the sealing film-covered electronic component mounting substrate 50 in which the substrate 5 and the electronic component 4 are covered with the sealing film 100 can be obtained.
  • FIG. 7 is a longitudinal sectional view showing a fourth embodiment of the sealing film of the present invention
  • FIGS. 8A to 8C are views for sealing an electronic component mounting substrate using the sealing film shown in FIG. It is a longitudinal cross-sectional view for demonstrating the stopping method.
  • the upper side in FIGS. 7 and 8 is referred to as “upper” and the lower side is referred to as “lower”.
  • the configurations of the insulating layer 12 and the covering layer 14 included in the sealing film 100 are different, and the other configurations are the same as those in the second embodiment.
  • the insulating layer 12 and the covering layer 14 are each formed larger than the electromagnetic wave shielding layer 13 as shown in FIG. 7 and FIG. It is exposed from the end (edge) of the layer 13.
  • the projecting portion 15 (first projecting portion) and the projecting portion 16 (third projecting portion) formed by the insulating layer 12 and the covering layer 14 projecting beyond the end of the electromagnetic wave shielding layer 13 are provided. I have. And these protrusion part 15 and protrusion part 16 form the lamination
  • the insulating layer 12 is on the lower side and the covering layer 14 is on the upper side. Then, the electronic component 4 is sealed with the electromagnetic wave shielding layer 13 through the insulating layer 12.
  • the laminated projection 65 formed by laminating the projection 15 and the projection 16 at the time of coating using the sealing film 100 is the bottom surface of the substrate 5 (the other side). It is configured so that it can be folded to the surface) side. Therefore, the end portion 51 on the lower surface of the substrate 5 can be covered with the protruding portion 15 included in the stacked protruding portion 65. Therefore, the sealing film 100 of the present embodiment can cover not only the upper surface side of the substrate 5 but also the end portion 51 on the lower surface of the substrate 5 with the laminated projecting portion 65, and has an excellent airtightness.
  • the component mounting board 45 can be covered. Therefore, in the sealing film-covered electronic component mounting substrate 50 obtained by covering with the sealing film 100, the electronic component 4 on the substrate 5 is more accurately suppressed from coming into contact with external factors such as moisture and dust. Or it can be prevented.
  • the laminated protrusion 65 is formed by laminating the protrusion 15 and the protrusion 16 at a position beyond the end of the electromagnetic wave shielding layer 13, and the end of the electromagnetic wave shielding layer 13 is also formed on the insulating layer 12.
  • the covering layer 14 By covering with the covering layer 14, the insulating property of the electromagnetic wave shielding layer 13 with respect to the electronic component 4 and the electronic component located outside the electronic component mounting board 45 can be more reliably ensured.
  • the elongation at the softening point is 150% or more and 3500% or less.
  • the linear expansion coefficient in the temperature range of 25 ° C. to 80 ° C. of the sealing film 100 is preferably 100 ppm / K or less. As described above, by defining the linear expansion coefficient of the sealing film 100, the folding of the laminated protrusion 65 from the upper surface side to the lower surface side of the substrate 5 is broken at the bent portion that bends the laminated protrusion 65. It can be carried out reliably without causing it.
  • the length of the laminated protrusion 65 protruding beyond the end of the electromagnetic wave shielding layer 13 in the sealing film 100 is not particularly limited, and is preferably 0.1 cm or more and 5.0 cm or less. More preferably, it is 5 cm or more and 2.5 cm or less.
  • the laminated protrusion 65 can reach the end 51 on the lower surface of the substrate 5 while being folded from the upper surface side to the lower surface side of the substrate 5. Therefore, it is possible to reliably realize the covering of the end portion 51 by the stacked projecting portion 65.
  • the electronic component mounting substrate sealing method of this embodiment is such that the sealing film 100 is placed on the electronic component mounting substrate 45 with the insulating layer 12 facing the electronic component mounting substrate 45 so as to cover the substrate 5 and the electronic component 4.
  • the stacking protrusion 65 is placed on the lower surface (the other surface) side of the substrate 5 to be brought into contact with the end portion 51 on the lower surface of the substrate 5 and the sealing film 100 is heated and softened.
  • the substrate 5 and the electronic component 4 are brought into contact with the end portion 51 on the lower surface of the substrate 5 by cooling and pressurizing the sealing film 100 with the heating / decompression step of reducing the pressure. And a cooling / pressurizing step for sealing with the sealing film 100.
  • the laminated protrusion 65 that protrudes beyond the end of the electromagnetic wave shielding layer 13 is folded to the lower surface side of the substrate 5, thereby bringing the laminated protrusion 65 into contact with the end 51 (FIG. 8B). )).
  • the sealing film 100 that is, the insulating layer 12, the electromagnetic wave shielding layer 13, and the coating layer 14 are softened.
  • the sealing film 100 that is, the insulating layer 12, the electromagnetic wave shielding layer 13, and the coating layer 14 are softened.
  • the sealing film 100 on the upper surface side of the substrate 5, It will be in the state which can follow the shape of the unevenness
  • the electronic component mounting substrate 45 and the sealing film 100 are arranged in a reduced-pressure atmosphere, so that not only the outside of the sealing film 100 but also the electronic component mounting substrate 45 and the sealing film 100 The gas (air) in between is degassed.
  • the sealing film 100 is extended, the shape of the unevenness 6 on the upper side of the substrate 5, that is, the shape of the electronic component 4 on the substrate 5 is slightly followed.
  • the part 51 is slightly covered.
  • the sealing film 100 can be made to follow the shape of the unevenness 6 formed on the upper surface side of the electronic component mounting substrate 45, and the laminated protrusion 65 is folded on the lower surface side of the substrate 5.
  • the end portion 51 can be covered.
  • the space between the electronic component mounting substrate 45 and the sealing film 100 is degassed, and the decompressed state is maintained.
  • the sealing film 100 is further extended.
  • the upper side of the substrate 5 follows the shape of the unevenness 6 (the shape of the electronic component 4) with an excellent degree of adhesion (air density), and further covers the end portion 51 with an excellent degree of adhesion.
  • the substrate 5 and the electronic component 4 are covered with the sealing film 100 in a softened state.
  • the elongation at the softening point of the sealing film 100 is 150% or more and 3500% or less.
  • the film 100 for sealing can be extended with the more excellent shape followability with respect to the unevenness
  • the laminated protrusion 65 is folded from the upper surface side to the lower surface side of the substrate 5 to be brought into contact with the end portion 51, it is possible to accurately suppress or prevent the laminated protrusion 65 from being broken at the bent portion. Can be prevented.
  • the sealing film 100 is cooled with the sealing film 100 in a state where the substrate 5 and the electronic component 4 are covered with the end 51 with excellent adhesion (airtightness).
  • the sealing film 100 is solidified while maintaining the state.
  • the substrate 5 and the electronic component 4 are in contact with the insulating layer 12 on the upper side of the substrate 5 by the sealing film 100 while following the shape of the irregularities 6 formed on the electronic component mounting substrate 45.
  • the film-covered electronic component mounting substrate 50 for sealing is obtained in a state where the folded laminated protrusion 65 covers the end 51 on the lower side of the substrate 5. Therefore, in the sealing film-covered electronic component mounting substrate 50, it is possible to more accurately suppress or prevent the external component such as moisture and dust from contacting the electronic component 4 and the electrode 3. Therefore, the reliability of the obtained electronic device including the sealing film-covered electronic component mounting substrate 50 and thus the sealing film-covered electronic component mounting substrate 50 can be improved.
  • the sealing film-covered electronic component mounting substrate 50 in which the substrate 5 and the electronic component 4 are covered with the sealing film 100 can be obtained.
  • FIG. 9 is a longitudinal sectional view showing a fifth embodiment of the sealing film of the present invention
  • FIGS. 10 (a) to 10 (c) show the sealing of the electronic component mounting substrate using the sealing film shown in FIG. It is a longitudinal cross-sectional view for demonstrating the stopping method.
  • the upper side in FIGS. 9 and 10 is referred to as “upper” and the lower side is referred to as “lower”.
  • the configurations of the electromagnetic wave shielding layer 13 and the covering layer 14 included in the sealing film 100 are different, and further, the configuration of the electronic component mounting substrate 45 covered with the sealing film 100 is different. Is the same as in the second embodiment.
  • the electromagnetic wave shielding layer 13 and the covering layer 14 are formed larger than the insulating layer 12 as shown in FIGS. Thereby, the edge part of the electromagnetic wave shielding layer 13 located in the insulating layer 12 side among the electromagnetic wave shielding layer 13 and the coating layer 14 is exposed from the edge part (edge part) of the insulating layer 12.
  • the electromagnetic wave shielding layer 13 includes the protruding portion 17 (second protruding portion) formed by protruding beyond the end portion of the insulating layer 12.
  • the electronic component mounting substrate 45 covered with the sealing film 100 of the fifth embodiment is mounted on the substrate 5 and the central portion on the upper surface (one surface) side of the substrate 5 (see FIG. 10).
  • the electronic component 4 that is placed) and the electrode 3 that is electrically connected to the electronic component 4 and is formed on the end portion 52 on the upper surface (one surface) side of the substrate 5 are provided.
  • the unevenness 6 including the convex portion 61 and the concave portion 62 is formed on the substrate 5 by mounting the electronic component 4 and the electrode 3 on the upper surface of the substrate 5.
  • an electrode for connecting to a power source for supplying electricity from the outside an electrode for electrically connecting to another electronic component located outside the electronic component mounting board 45,
  • a ground electrode for grounding the electronic component 4 may be used.
  • the electronic component mounting substrate 45 on which the electronic component 4 and the electrode 3 are mounted on the upper surface side is covered with the sealing film 100 with the insulating layer 12 on the lower side and the coating layer 14 on the upper side. Then, the electronic component 4 is sealed with the electromagnetic wave shielding layer 13 through the insulating layer 12.
  • the electromagnetic wave shielding layer 13 is exposed from the insulating layer 12 at the projecting portion 17 provided in the electromagnetic wave shielding layer 13 when the sealing film 100 is used for coating. Therefore, the protruding portion 17 can be brought into contact with the electrode 3 formed on the end portion 52 on the upper surface of the substrate 5. Therefore, since the protrusion 17 is composed of the electromagnetic wave shielding layer 13 and has conductivity, in the obtained film-covered electronic component mounting substrate 50 for sealing, the electrode 3 and the outside through the electromagnetic wave shielding layer 13 are provided. Can be secured.
  • the coating layer 14 is formed on almost the entire upper surface of the electromagnetic wave shielding layer 13, the electrical connection between the electrode 3 and the outside via the electromagnetic wave shielding layer 13 is ensured. Is formed by removing a part of the coating layer 14 to form an exposed portion where the electromagnetic wave shielding layer 13 is exposed, and electrically connecting the electromagnetic wave shielding layer 13 and the outside at the exposed portion. Realized.
  • the length of the protruding portion 17 of the electromagnetic wave shielding layer 13 protruding beyond the end portion of the insulating layer 12 in the sealing film 100 is not particularly limited, and may be 0.1 cm or more and 5.0 cm or less. Preferably, it is 0.5 cm or more and 2.5 cm or less.
  • the projecting portion 17 covers the electrode 3 located on the upper side of the substrate 5 and realizes electrical connection between the projecting portion 17 and the electrode 3. can do.
  • the electronic component mounting substrate sealing method of this embodiment is such that the sealing film 100 is placed on the electronic component mounting substrate 45 with the insulating layer 12 facing the electronic component mounting substrate 45 so as to cover the substrate 5 and the electronic component 4.
  • the sealing film 100 is cooled and pressurized so that the substrate 17, the electronic component 4, and the electrode 3 are sealed with the sealing film 100 in a state where the protruding portion 17 is in contact with the electrode 3. Pressure step.
  • the electronic component 4 is covered with the insulating layer 12 located at the center of the sealing film 100, and the electrode 3 is covered with the protruding portion 17 protruding beyond the end of the insulating layer 12 (FIG. 10B). )).
  • the electronic component mounting substrate 45 and the sealing film 100 are arranged in a reduced-pressure atmosphere, so that not only the outside of the sealing film 100 but also the electronic component mounting substrate 45 and the sealing film 100 The gas (air) in between is degassed.
  • the shape of the unevenness 6, that is, the shape of the electronic component 4 and the electrode 3 on the substrate 5 is slightly followed on the upper side of the substrate 5.
  • the sealing film 100 can be made to follow the shape of the irregularities 6 formed on the upper surface side of the electronic component mounting substrate 45.
  • the space between the electronic component mounting substrate 45 and the sealing film 100 is degassed, and the decompressed state is maintained.
  • the sealing film 100 is further extended.
  • the substrate 5 is sealed by the softened sealing film 100 in a state in which the shape of the unevenness 6 (the shape of the electronic component 4 and the electrode 3) is followed with excellent adhesion (air density).
  • the electronic component 4 and the electrode 3 are covered.
  • the elongation at the softening point of the sealing film 100 is 150% or more and 3500% or less.
  • the substrate 5 and the electronic component 4 are in contact with the insulating layer 12 on the upper side of the substrate 5 by the sealing film 100 while following the shape of the irregularities 6 formed on the electronic component mounting substrate 45.
  • a sealing film-covered electronic component mounting substrate 50 in which the electrode 3 is coated in a state where the electromagnetic wave shielding layer 13 is in contact with the substrate is obtained. Therefore, in this film-covered electronic component mounting substrate 50 for sealing, it is possible to accurately suppress or prevent the external component such as moisture and dust from contacting the electronic component 4 and the electrode 3. Accordingly, the reliability of the obtained electronic device including the sealing film-covered electronic component mounting substrate 50 and thus the sealing film-covered electronic component mounting substrate 50 can be improved.
  • the sealing film 100 used for covering the electronic component mounting substrate 45 as described above is composed of a laminate of the insulating layer 12, the electromagnetic wave shielding layer 13, and the covering layer 14, but the electromagnetic wave shielding layer 13 is At the end portion, a protruding portion 17 formed by protruding beyond the end portion of the insulating layer 12 is provided.
  • the protruding portion 17 directly covers the electrode 3 without the insulating layer 12 interposed therebetween.
  • the sealing film-covered electronic component mounting substrate 50 in which the substrate 5, the electronic component 4, and the electrode 3 are covered with the sealing film 100 can be obtained.
  • FIG. 11 is a longitudinal sectional view showing a sixth embodiment of the sealing film of the present invention
  • FIGS. 12 (a) to 12 (c) show the sealing of the electronic component mounting substrate using the sealing film shown in FIG. It is a longitudinal cross-sectional view for demonstrating the stopping method.
  • the upper side in FIGS. 11 and 12 is referred to as “upper” and the lower side is referred to as “lower”.
  • the configurations of the electromagnetic wave shielding layer 13 and the covering layer 14 included in the sealing film 100 are different, and further, the configuration of the electronic component mounting substrate 45 covered using the sealing film 100 is different. Is the same as in the second embodiment.
  • the electromagnetic wave shielding layer 13 is formed larger than the insulating layer 12, and its end is the end (edge) of the insulating layer 12. ) Is exposed.
  • the electromagnetic wave shielding layer 13 includes the protruding portion 17 (second protruding portion) formed by protruding beyond the end portion of the insulating layer 12.
  • the coating layer 14 is formed larger than the electromagnetic wave shielding layer 13, and its end portion is exposed from the end portion (edge portion) of the electromagnetic wave shielding layer 13.
  • the coating layer 14 includes the protruding portion 15 (first protruding portion) formed by protruding beyond the end portion of the electromagnetic wave shielding layer 13.
  • the electronic component mounting substrate 45 covered with the sealing film 100 of the sixth embodiment is mounted on the substrate 5 and the central portion on the upper surface (one surface) side of the substrate 5 (see FIG. 12).
  • the electronic component 4 that is placed) and the electrode 3 that is electrically connected to the electronic component 4 and is formed at the end portion on the upper surface (one surface) side of the substrate 5 are provided.
  • the unevenness 6 including the convex portion 61 and the concave portion 62 is formed on the substrate 5 by mounting the electronic component 4 and the electrode 3 on the upper surface of the substrate 5.
  • the electronic component mounting substrate 45 on which the electronic component 4 and the electrode 3 are mounted on the upper surface side is covered with the sealing film 100 with the insulating layer 12 on the lower side and the coating layer 14 on the upper side. Then, the electronic component 4 is sealed with the electromagnetic wave shielding layer 13 through the insulating layer 12.
  • the electromagnetic wave shielding layer 13 is exposed from the insulating layer 12 at the protrusion 17 provided in the electromagnetic wave shielding layer 13 when the sealing film 100 is used for coating. Therefore, the protruding portion 17 can be brought into contact with the electrode 3 formed on the end portion 52 on the upper surface of the substrate 5. Therefore, since the protrusion 17 is composed of the electromagnetic wave shielding layer 13 and has conductivity, in the obtained film-covered electronic component mounting substrate 50 for sealing, the electrode 3 and the outside through the electromagnetic wave shielding layer 13 are provided. Can be secured.
  • the coating layer 14 is formed on almost the entire upper surface of the electromagnetic wave shielding layer 13, the electrical connection between the electrode 3 and the outside via the electromagnetic wave shielding layer 13 is ensured. Is formed by removing a part of the coating layer 14 to form an exposed portion where the electromagnetic wave shielding layer 13 is exposed, and electrically connecting the electromagnetic wave shielding layer 13 and the outside at the exposed portion. Realized.
  • the protrusion 15 provided in the coating layer 14 is configured to be foldable to the lower surface (the other surface) side of the substrate 5. Therefore, the end portion 51 on the lower surface of the substrate 5 can be covered with the protruding portion 15. Therefore, the sealing film 100 according to the present embodiment can cover not only the upper surface side of the substrate 5 but also the end portion 51 on the lower surface of the substrate 5 with the coating layer 14, and the electronic component with better airtightness.
  • the mounting substrate 45 can be covered. Therefore, in the sealing film-covered electronic component mounting substrate 50 obtained by covering with the sealing film 100, the electronic component 4 on the substrate 5 is more accurately suppressed from coming into contact with external factors such as moisture and dust. Or it can be prevented.
  • the elongation at the softening point is 150% or more and 3500% or less.
  • the linear expansion coefficient in the temperature range of 25 ° C. to 80 ° C. of the sealing film 100 is preferably 100 ppm / K or less.
  • the length of the protruding portion 17 of the electromagnetic wave shielding layer 13 protruding beyond the end portion of the insulating layer 12 in the sealing film 100 is not particularly limited, and may be 0.1 cm or more and 5.0 cm or less. Preferably, it is 0.5 cm or more and 2.5 cm or less.
  • the projecting portion 17 covers the electrode 3 located on the upper side of the substrate 5 and realizes electrical connection between the projecting portion 17 and the electrode 3. can do.
  • the length of the protrusion part 15 of the coating layer 14 which protrudes beyond the edge part of the electromagnetic wave shield layer 13 in the film 100 for sealing is not specifically limited, It may be 0.1 cm or more and 5.0 cm or less. Preferably, it is 0.5 cm or more and 2.5 cm or less.
  • the protruding portion 15 can reach the end portion 51 on the lower surface of the substrate 5 while being folded from the upper surface side of the substrate 5 to the lower surface side. It is possible to reliably realize the covering of the end portion 51 by the protruding portion 15.
  • the electronic component mounting substrate sealing method of this embodiment is such that the sealing film 100 is placed on the electronic component mounting substrate 45 with the insulating layer 12 facing the electronic component mounting substrate 45 so as to cover the substrate 5 and the electronic component 4.
  • the projecting portion 17 is brought into contact with the electrode 3 on the upper surface (one surface) side of the substrate 5 while the projecting portion 15 is folded on the lower surface (the other surface) side of the substrate 5.
  • the projecting portion 17 is formed by placing the bottom surface 51 in contact with the end portion 51, heating and softening the sealing film 100, reducing the pressure, and cooling and pressurizing the sealing film 100. Is in contact with the electrode 3 and the protruding portion 15 is in contact with the end portion 51 on the lower surface of the substrate 5, and the substrate 5, the electronic component 4, and the electrode 3 are sealed with the sealing film 100. Pressure process
  • the electronic component 4 is covered with the insulating layer 12 positioned at the center of the sealing film 100, and the electrode 3 is covered with the protruding portion 17 protruding beyond the end of the insulating layer 12. Further, the protruding portion 15 of the covering layer 14 protruding beyond the end portion of the electromagnetic wave shielding layer 13 is folded to the lower surface side of the substrate 5, thereby bringing the protruding portion 15 into contact with the end portion 51 (FIG. 12B). ).
  • the sealing film 100 that is, the insulating layer 12, the electromagnetic wave shielding layer 13, and the coating layer 14 are softened.
  • the end 51 can be covered on the lower surface side of the substrate 5.
  • the electronic component mounting substrate 45 and the sealing film 100 are arranged in a reduced-pressure atmosphere, so that not only the outside of the sealing film 100 but also the electronic component mounting substrate 45 and the sealing film 100 The gas (air) in between is degassed.
  • the sealing film 100 extends, the shape of the unevenness 6 on the upper side of the substrate 5, that is, the shape of the electronic component 4 and the electrode 3 on the substrate 5 is slightly followed. Then, the end 51 is slightly covered.
  • the sealing film 100 can be made to follow the shape of the unevenness 6 formed on the upper surface side of the electronic component mounting substrate 45, and the protruding portion 15 is folded on the lower surface side of the substrate 5.
  • the end 51 can be covered.
  • the space between the electronic component mounting substrate 45 and the sealing film 100 is degassed, and the decompressed state is maintained.
  • the sealing film 100 is further extended.
  • the shape of the unevenness 6 (the shape of the electronic component 4 and the electrode 3) follows with an excellent degree of adhesion (air density), and further, the end 51 is covered with an excellent degree of adhesion.
  • the substrate 5, the electronic component 4, and the electrode 3 are covered with the sealing film 100 in a softened state.
  • the elongation at the softening point of the sealing film 100 is 150% or more and 3500% or less.
  • the film 100 for sealing can be extended with the more excellent shape followability with respect to the unevenness
  • the substrate 5 and the electronic component 4 are in contact with the insulating layer 12 on the upper side of the substrate 5 by the sealing film 100 while following the shape of the irregularities 6 formed on the electronic component mounting substrate 45.
  • the electrode 3 is covered in a state where the electromagnetic wave shielding layer 13 is in contact, and further, the projecting portion 15 of the folded covering layer 14 is covered with the end portion 51 below the substrate 5.
  • the stop film-covered electronic component mounting substrate 50 is obtained. Therefore, in the sealing film-covered electronic component mounting substrate 50, it is possible to more accurately suppress or prevent the external component such as moisture and dust from contacting the electronic component 4 and the electrode 3. Therefore, the reliability of the obtained electronic device including the sealing film-covered electronic component mounting substrate 50 and thus the sealing film-covered electronic component mounting substrate 50 can be improved.
  • the sealing film 100 used for covering the electronic component mounting substrate 45 as described above is composed of a laminate of the insulating layer 12, the electromagnetic wave shielding layer 13, and the covering layer 14, but the electromagnetic wave shielding layer 13 is At the end portion, a protruding portion 17 formed by protruding beyond the end portion of the insulating layer 12 is provided.
  • the protruding portion 17 directly covers the electrode 3 without the insulating layer 12 interposed therebetween.
  • the sealing film-covered electronic component mounting substrate 50 in which the substrate 5, the electronic component 4, and the electrode 3 are covered with the sealing film 100 can be obtained.
  • FIG. 13 is a longitudinal sectional view showing a seventh embodiment of the sealing film of the present invention
  • FIGS. 14 (a) to 14 (c) show the sealing of the electronic component mounting substrate using the sealing film shown in FIG. It is a longitudinal cross-sectional view for demonstrating the stopping method.
  • the upper side in FIGS. 13 and 14 is referred to as “upper” and the lower side is referred to as “lower”.
  • the configurations of the insulating layer 12 and the electromagnetic wave shielding layer 13 included in the sealing film 100 are different, and further, the configuration of the electronic component mounting substrate 45 covered with the sealing film 100 is different. Is the same as in the second embodiment.
  • the insulating layer 12 and the electromagnetic wave shielding layer 13 are formed larger than the covering layer 14 as shown in FIGS. Thereby, the edge part of the electromagnetic wave shielding layer 13 located in the coating layer 14 side among the insulating layer 12 and the electromagnetic wave shielding layer 13 is exposed from the edge part (edge part) of the coating layer 14.
  • the electromagnetic wave shielding layer 13 includes the protruding portion 18 (fourth protruding portion) formed by protruding beyond the end portion of the covering layer 14.
  • the electronic component mounting substrate 45 covered with the sealing film 100 of the seventh embodiment is mounted on the substrate 5 and a central portion on the upper surface (one surface) side of the substrate 5 (see FIG. 14).
  • the electronic component 4 that is placed) and the electrode 3 that is electrically connected to the electronic component 4 and is formed on the end portion 52 on the upper surface (one surface) side of the substrate 5 are provided.
  • the unevenness 6 including the convex portion 61 and the concave portion 62 is formed on the substrate 5 by mounting the electronic component 4 and the electrode 3 on the upper surface of the substrate 5.
  • the electronic component mounting substrate 45 on which the electronic component 4 and the electrode 3 are mounted on the upper surface side is covered with the sealing film 100 with the insulating layer 12 on the lower side and the coating layer 14 on the upper side. Then, the electronic component 4 is sealed with the electromagnetic wave shielding layer 13 through the insulating layer 12.
  • the electromagnetic wave shielding layer 13 is exposed from the covering layer 14 at the protruding portion 18 included in the electromagnetic wave shielding layer 13 when the sealing film 100 is used for coating.
  • 18 is configured such that it can be folded to the upper surface (one surface) side of the substrate 5 so that the protruding portion 18 and the electrode 3 can face each other. Therefore, the protruding portion 18 can be brought into contact with the electrode 3 formed on the end portion 52 on the upper surface of the substrate 5. Therefore, since the protrusion 18 is composed of the electromagnetic wave shielding layer 13 and has conductivity, in the obtained film-covered electronic component mounting substrate 50 for sealing, the electrode 3 and the outside through the electromagnetic wave shielding layer 13 are provided. Can be secured.
  • the coating layer 14 is formed on almost the entire surface except the protruding portion 18 on the upper surface of the electromagnetic wave shielding layer 13, the electrical connection between the electrode 3 and the outside via the electromagnetic wave shielding layer 13 is achieved.
  • a part of the coating layer 14 is removed to form an exposed portion where the electromagnetic shielding layer 13 is exposed, and the electromagnetic shielding layer 13 and the outside are electrically connected at the exposed portion. This connection is realized.
  • the elongation at the softening point of the sealing film 100 is 150% or more and 3500% or less.
  • the linear expansion coefficient in the temperature range of 25 ° C. to 80 ° C. of the sealing film 100 is preferably 100 ppm / K or less.
  • the protrusion 18 is bent so that the electrode 3 on the upper surface of the substrate 5 faces the protrusion 18. The bending portion can be reliably carried out without causing breakage.
  • the length of the protruding portion 18 of the electromagnetic wave shielding layer 13 protruding beyond the end portion of the coating layer 14 in the sealing film 100 is not particularly limited, and may be 0.1 cm or more and 5.0 cm or less. Preferably, it is 0.5 cm or more and 2.5 cm or less.
  • the projecting portion 18 covers the electrode 3 located on the upper side of the substrate 5 and realizes electrical connection between the projecting portion 18 and the electrode 3. can do.
  • the sealing film 100 is placed on the electronic component mounting substrate 45 with the insulating layer 12 facing the electronic component mounting substrate 45 so as to cover the substrate 5 and the electronic component 4. While disposing, the projecting portion 18 is folded, and the disposing step for contacting the electrode 3 on the upper surface (one surface) of the substrate 5 is brought into contact, and the sealing film 100 is heated and softened, and the heating is performed to reduce the pressure. -The substrate 5, the electronic component 4, and the electrode 3 are sealed with the sealing film 100 in a state where the projecting portion 18 is in contact with the electrode 3 by cooling and pressurizing the sealing film 100. Cooling / pressurizing step to stop.
  • the electronic component 4 is covered with the insulating layer 12 of the sealing film 100, and the protruding portion 18 protruding beyond the end portion of the covering layer 14 is folded to cover the electrode 3 with the protruding portion 18 ( FIG. 14 (b)).
  • the electronic component mounting substrate 45 and the sealing film 100 are arranged in a reduced-pressure atmosphere, so that not only the outside of the sealing film 100 but also the electronic component mounting substrate 45 and the sealing film 100 The gas (air) in between is degassed.
  • the sealing film 100 is extended, the shape of the projections and depressions 6, that is, the shape of the electronic component 4 and the electrode 3 on the substrate 5, while the electrode 3 and the protrusion 18 are in contact with each other on the upper side of the substrate 5. It will be in the state which followed slightly.
  • the sealing film 100 can be made to follow the shape of the irregularities 6 formed on the upper surface side of the electronic component mounting substrate 45.
  • the space between the electronic component mounting substrate 45 and the sealing film 100 is degassed, and the decompressed state is maintained.
  • the sealing film 100 is further extended.
  • the substrate 5 is sealed by the softened sealing film 100 in a state in which the shape of the unevenness 6 (the shape of the electronic component 4 and the electrode 3) is followed with excellent adhesion (air density).
  • the electronic component 4 and the electrode 3 are covered.
  • the elongation at the softening point of the sealing film 100 is 150% or more and 3500% or less.
  • the film 100 for sealing can be extended with the more excellent shape followability with respect to the unevenness
  • the substrate 5 and the electronic component 4 are in contact with the insulating layer 12 on the upper side of the substrate 5 by the sealing film 100 while following the shape of the irregularities 6 formed on the electronic component mounting substrate 45.
  • a sealing film-covered electronic component mounting substrate 50 in which the electrode 3 is coated in a state where the electromagnetic wave shielding layer 13 is in contact with the substrate is obtained. Therefore, in this film-covered electronic component mounting substrate 50 for sealing, it is possible to accurately suppress or prevent the external component such as moisture and dust from contacting the electronic component 4 and the electrode 3. Accordingly, the reliability of the obtained electronic device including the sealing film-covered electronic component mounting substrate 50 and thus the sealing film-covered electronic component mounting substrate 50 can be improved.
  • the sealing film 100 used for covering the electronic component mounting substrate 45 as described above is composed of a laminate of the insulating layer 12, the electromagnetic wave shielding layer 13, and the covering layer 14, but the electromagnetic wave shielding layer 13 is At the end portion, a protruding portion 18 formed by protruding beyond the end portion of the coating layer 14 is provided.
  • the protruding portion 18 directly covers the electrode 3 without the covering layer 14 being interposed.
  • the sealing film-covered electronic component mounting substrate 50 in which the substrate 5, the electronic component 4, and the electrode 3 are covered with the sealing film 100 can be obtained.
  • FIG. 15 is a longitudinal sectional view showing an eighth embodiment of the sealing film of the present invention
  • FIGS. 16 (a) to 16 (c) show the sealing of the electronic component mounting substrate using the sealing film shown in FIG. It is a longitudinal cross-sectional view for demonstrating the stopping method.
  • the upper side in FIGS. 15 and 16 is referred to as “upper” and the lower side is referred to as “lower”.
  • the configurations of the electromagnetic wave shielding layer 13 and the covering layer 14 included in the sealing film 100 are different, and further, the configuration of the electronic component mounting substrate 45 covered using the sealing film 100 is different. Is the same as in the first embodiment.
  • the electromagnetic wave shielding layer 13 and the covering layer 14 are formed larger than the insulating layer 12 as shown in FIGS. Thereby, the edge part of the electromagnetic wave shielding layer 13 located in the insulating layer 12 side among the electromagnetic wave shielding layer 13 and the coating layer 14 is exposed from the edge part (edge part) of the insulating layer 12.
  • the electromagnetic wave shielding layer 13 and the protruding portion 17 (second protruding portion) formed by protruding beyond the end portions of the insulating layer 12 are provided.
  • the electronic component mounting substrate 45 covered with the sealing film 100 of the eighth embodiment is mounted on the substrate 5 and the central portion on the upper surface (one surface) side of the substrate 5 (see FIG. 16).
  • the electronic component 4 that is placed) and the electrode 3 that is electrically connected to the electronic component 4 and formed on the end 51 on the lower surface (the other surface) side of the substrate 5 are provided.
  • the mounting of the electronic component 4 on the upper surface of the substrate 5 forms the unevenness 6 including the convex portions 61 and the concave portions 62 on the substrate 5.
  • the electronic component mounting substrate 45 on which the electronic component 4 and the electrode 3 are mounted on the upper surface side is covered with the sealing film 100 with the insulating layer 12 on the lower side and the coating layer 14 on the upper side. Then, the electronic component 4 is sealed with the electromagnetic wave shielding layer 13 through the insulating layer 12.
  • the projecting portion 17 provided in the electromagnetic wave shielding layer 13 is configured to be able to be folded to the lower surface side of the substrate 5 when the sealing film 100 is used for coating. Therefore, the protruding portion 17 can be brought into contact with the electrode 3 formed on the end portion 51 on the lower surface of the substrate 5. Therefore, since this protrusion part 17 is comprised with the electromagnetic wave shield layer 13 and has electroconductivity, in the obtained film-covered electronic component mounting substrate 50 for sealing, the electrode 3 via the electromagnetic wave shield layer 13 and the outside The electrical connection can be ensured.
  • the coating layer 14 is formed on almost the entire upper surface of the electromagnetic wave shielding layer 13, the electrical connection between the electrode 3 and the outside via the electromagnetic wave shielding layer 13 is ensured. Is formed by removing a part of the coating layer 14 to form an exposed portion where the electromagnetic wave shielding layer 13 is exposed, and electrically connecting the electromagnetic wave shielding layer 13 and the outside at the exposed portion. Realized.
  • the elongation at the softening point is 150% or more and 3500% or less.
  • the linear expansion coefficient in the temperature range of 25 ° C. to 80 ° C. of the sealing film 100 is preferably 100 ppm / K or less.
  • the length of the protruding portion 17 of the electromagnetic wave shielding layer 13 protruding beyond the end portion of the insulating layer 12 in the sealing film 100 is not particularly limited, and may be 0.5 cm or more and 8.0 cm or less. Preferably, it is 1.0 cm or more and 5.0 cm or less.
  • the projecting portion 17 reaches the electrode 3 formed on the end portion 51 on the lower surface of the substrate 5 while folding the projecting portion 17 from the upper surface side to the lower surface side of the substrate 5. Therefore, the electrical connection of the electrode 3 by the protrusion 17 can be reliably realized.
  • the electronic component mounting substrate sealing method of this embodiment is such that the sealing film 100 is placed on the electronic component mounting substrate 45 with the insulating layer 12 facing the electronic component mounting substrate 45 so as to cover the substrate 5 and the electronic component 4. And placing the protrusion 17 on the lower surface (the other surface) side of the substrate 5 to be in contact with the electrode 3, and heating / depressurizing the sealing film 100 while heating and softening the sealing film 100. Cooling / heating which seals the board
  • the protruding portion 17 protruding beyond the end portion of the insulating layer 12 is folded to the lower surface side of the substrate 5, thereby bringing the protruding portion 17 into contact with the electrode 3 (FIG. 16B).
  • the sealing film 100 that is, the insulating layer 12, the electromagnetic wave shielding layer 13, and the coating layer 14 are softened.
  • the shape of the unevenness 6 formed by mounting the electronic component 4 can be followed, and on the lower surface side of the substrate 5, the shape of the electrode 3 provided at the end 51 on the lower surface of the substrate 5. It will be in the state which can track.
  • the electronic component mounting substrate 45 and the sealing film 100 are arranged in a reduced-pressure atmosphere, so that not only the outside of the sealing film 100 but also the electronic component mounting substrate 45 and the sealing film 100 The gas (air) in between is degassed.
  • the sealing film 100 can follow the shape of the irregularities 6 formed on the upper surface side of the electronic component mounting substrate 45 and the shape of the electrodes 3 formed on the lower surface side. be able to.
  • the space between the electronic component mounting substrate 45 and the sealing film 100 is degassed, and the decompressed state is maintained.
  • the sealing film 100 is further extended.
  • the upper surface of the substrate 5 is softened while following the shape of the unevenness 6 (the shape of the electronic component 4), and the lower side of the substrate 5 with the excellent degree of adhesion (air density) of the shape of the electrode 3.
  • the sealing film 100 covers the substrate 5, the electronic component 4, and the electrode 3.
  • the elongation at the softening point of the sealing film 100 is 150% or more and 3500% or less.
  • the film 100 for sealing can be extended with the more excellent shape followability with respect to the unevenness
  • the sealing film 100 can cover the substrate 5 and the electronic component 4 on the upper side of the substrate 5 and the electrode 3 on the lower side of the substrate 5 with excellent adhesion. Further, when the protruding portion 17 is folded from the upper surface side to the lower surface side of the substrate 5 to be brought into contact with the electrode 3, it is possible to accurately suppress or prevent the protruding portion 17 from being broken at the bent portion. Can do.
  • the sealing film 100 is cooled in a state where the sealing film 100 covers the substrate 5 and the electronic component 4, and further the electrode 3 with excellent adhesion (airtightness).
  • the sealing film 100 is solidified while maintaining the above.
  • the substrate 5 and the electronic component 4 are in contact with the insulating layer 12 on the upper side of the substrate 5 by the sealing film 100 while following the shape of the unevenness 6 formed on the electronic component mounting substrate 45.
  • the sealing film-covered electronic component mounting substrate 50 covered with the substrate 5 with the electromagnetic wave shielding layer 13 in contact with the lower side of the substrate 5 is obtained. Therefore, in the sealing film-covered electronic component mounting substrate 50, it is possible to more accurately suppress or prevent the external component such as moisture and dust from contacting the electronic component 4 and the electrode 3. Therefore, the reliability of the obtained electronic device including the sealing film-covered electronic component mounting substrate 50 and thus the sealing film-covered electronic component mounting substrate 50 can be improved.
  • the sealing film 100 used for covering the electronic component mounting substrate 45 as described above is composed of a laminate of the insulating layer 12, the electromagnetic wave shielding layer 13, and the covering layer 14, but the electromagnetic wave shielding layer 13 is
  • the insulating layer 12 is formed so as to be larger than the insulating layer 12, and the insulating layer 12 is laminated at the center portion thereof, but at the end portion, the protruding portion 17 formed by protruding beyond the end portion of the insulating layer 12 is provided. Then, the protruding portion 17 is folded under the substrate 5 to directly cover the electrode 3. Thereby, since the electrode 3 is electrically connected to the protrusion 17 (electromagnetic wave shield layer 13), in the obtained film-covered electronic component mounting substrate 50 for sealing, the electrode 3 and the outside through the protrusion 17 It is possible to ensure electrical connection.
  • the sealing film-covered electronic component mounting substrate 50 in which the substrate 5, the electronic component 4, and the electrode 3 are covered with the sealing film 100 can be obtained.
  • FIG. 17 is a longitudinal sectional view showing a ninth embodiment of the sealing film of the present invention
  • FIGS. 18 (a) to 18 (c) show the sealing of the electronic component mounting substrate using the sealing film shown in FIG. It is a longitudinal cross-sectional view for demonstrating the stopping method.
  • the upper side in FIGS. 17 and 18 is referred to as “upper” and the lower side is referred to as “lower”.
  • the insulating layer 12 included in the sealing film 100 is the same as the first embodiment except that the insulating layer 12 is formed larger than the electromagnetic wave shielding layer 13. is there.
  • the sealing film 100 is configured by a laminate including an insulating layer 12 and an electromagnetic wave shielding layer 13 laminated on one surface side (upper surface side) of the insulating layer 12.
  • the insulating layer 12 is formed to be larger than the electromagnetic wave shielding layer 13, and its end portion is exposed from the end portion (edge portion) of the electromagnetic wave shielding layer 13.
  • the insulating layer includes the protruding portion 16 formed by protruding beyond the end portion of the electromagnetic wave shielding layer 13.
  • the electronic component mounting substrate 45 covered with the sealing film 100 is mounted on the substrate 5 and the central portion on the upper surface (one surface) side of the substrate 5 as shown in FIG.
  • the electronic component 4 is placed (placed).
  • the mounting of the electronic component 4 on the upper surface of the substrate 5 forms the unevenness 6 including the convex portions 61 and the concave portions 62 on the substrate 5.
  • the substrate 5 include a printed wiring board
  • examples of the electronic component 4 mounted on the substrate 5 include a semiconductor element, a capacitor, a coil, a connector, and a resistor.
  • the insulating layer 12 is on the lower side
  • the electromagnetic wave shielding layer 13 is on the upper side
  • the covering is performed using the sealing film 100.
  • the electronic component 4 is sealed with an electromagnetic wave shielding layer 13 through an insulating layer 12. Therefore, in the obtained film-covered electronic component mounting substrate 50 for sealing, the influence of noise due to electromagnetic waves on the electronic component 4 is accurately suppressed or prevented.
  • the electronic component 4 is sealed by the electromagnetic wave shielding layer 13 through the insulating layer 12 including the protruding portion 16 protruding beyond the end portion of the electromagnetic wave shielding layer 13, and the electronic component 4 is interposed between the electronic component 4 and the electromagnetic wave shielding layer 13. Therefore, the electromagnetic wave shielding layer 13 is ensured to be insulated from the electronic component 4.
  • this sealing film 100 has an elongation at the softening point required in accordance with JIS K 6251 of 150% or more and 3500% or less.
  • the softening point of the sealing film 100 is within such a range, when the electronic component mounting substrate 45 is covered with the sealing film 100, the convex portion 61 and the concave portion 62 included in the electronic component mounting substrate 45 are provided. It can coat
  • the sealing film 100 can be made to follow the shape of the irregularities 6.
  • the elongation at the softening point of the sealing film 100 is obtained by making the sealing film 100 of the present embodiment a multilayer body including the electromagnetic wave shielding layer 13 and the insulating layer 12 having the above-described configuration. It can be set to 150% or more and 3500% or less relatively easily. The elongation may be 150% or more and 3500% or less, but is preferably 1000% or more and 3500% or less, and more preferably 1000% or more and 2000% or less.
  • the sealing film 100 when used to coat the unevenness 6 included in the electronic component mounting substrate 45, it can be covered in a state of being sealed with excellent followability to the shape of the unevenness 6. It is possible to accurately suppress or prevent the sealing film 100 from being broken in the middle.
  • the linear expansion coefficient in the temperature range of 25 ° C. or more and 80 ° C. or less of the sealing film 100 is preferably 100 ppm / K or less, and more preferably 5 ppm / K or more and 50 ppm / K or less.
  • the sealing film 100 is excellent when the sealing film 100 is heated. Since it has a stretching property, the shape followability with respect to the unevenness 6 of the sealing film 100 can be improved more reliably.
  • excellent adhesiveness can be maintained between the sealing film 100, the substrate 5, and the electronic component 4, sealing caused by heat generated by repeatedly driving the electronic component mounting substrate 45 The peeling of the film for use 100 from the electronic component mounting board 45 can be suppressed or prevented more accurately.
  • the length of the protrusion part 16 of the insulating layer 12 which protrudes beyond the edge part of the electromagnetic wave shield layer 13 in the film 100 for sealing is not specifically limited, It is 0.5 cm or more and 2.5 cm or less. Preferably, it is 0.2 cm or more and 1.5 cm or less.
  • the average thickness of the sealing film 100 as a whole is preferably 10 ⁇ m or more and 700 ⁇ m or less, and more preferably 20 ⁇ m or more and 400 ⁇ m or less. By setting the average thickness of the sealing film 100 within this range, the sealing film 100 can be accurately suppressed or prevented from breaking in the middle of the sealing film 100, and for sealing. The elongation at the softening point of the film 100 can be reliably set within a range of 150% to 3500%.
  • the electronic component mounting substrate sealing method of the present embodiment includes an arrangement step of disposing the sealing film 100 on the electronic component mounting substrate 45 so as to cover the substrate 5 and the electronic component 4, and the sealing film 100.
  • the sealing film 100 In the state where the electronic component 4 is covered with the electromagnetic wave shielding layer 13 through the insulating layer 12 by heating and softening and heating / depressurizing step for reducing the pressure, cooling the sealing film 100, and applying pressure. 5 and a cooling / pressurizing step for sealing the electronic component 4 with the sealing film 100.
  • the sealing film 100 that is, the electromagnetic wave shielding layer 13 and the insulating layer 12 are softened.
  • the electronic film 4 is mounted on the substrate 5. It will be in the state which can be followed to the shape of the unevenness 6 which became.
  • the electronic component mounting substrate 45 and the sealing film 100 are arranged in a reduced-pressure atmosphere, so that not only the upper side of the sealing film 100 but also the electronic component mounting substrate 45 and the sealing film 100 The gas (air) in between is degassed.
  • the sealing film 100 extends, the shape of the unevenness 6, that is, the shape of the electronic component 4 on the substrate 5 is slightly followed.
  • the sealing film 100 can be made to follow the shape of the unevenness 6 formed on the electronic component mounting substrate 45.
  • the heating of the sealing film 100 and the reduced pressure of the atmosphere may be reduced after the heating or may be heated after the reduced pressure, but it is preferable to perform the heating and the reduced pressure almost simultaneously. Thereby, the softened film 100 for sealing can be made into the state which followed the shape of the unevenness
  • the space between the electronic component mounting substrate 45 and the sealing film 100 is degassed, and the decompressed state is maintained.
  • the sealing film 100 is further extended.
  • the sealing film 100 in a softened state follows the adhesion (air density) excellent in the shape of the unevenness 6 (the shape of the electronic component 4).
  • the substrate 5 and the electronic component 4 are covered.
  • the pressing step can be omitted if the sealing film 100 sufficiently follows the shape of the irregularities 6.
  • the elongation at the softening point of the sealing film 100 is 150% or more and 3500% or less. Therefore, since the sealing film 100 can be extended with better shape followability with respect to the unevenness 6 formed on the electronic component mounting substrate 45 during this pressurization, the sealing film in a softened state By 100, the board
  • the sealing film 100 used for covering the electronic component mounting substrate 45 as described above is composed of a laminate of the insulating layer 12 and the electromagnetic wave shielding layer 13, and the insulating layer 12 is composed of the electromagnetic wave shielding layer 13.
  • the electromagnetic wave shielding layer 13 is laminated at the central portion thereof, and the projecting portion 16 formed by projecting beyond the end portion of the electromagnetic wave shielding layer 13 is provided at the end portion.
  • the electromagnetic wave shielding layer 13 covers the electronic component 4 through the central portion of the insulating layer 12 and covers the protruding portion 16 that is the end portion of the insulating layer 12 in a state that does not exist. Therefore, in the obtained film-covered electronic component mounting substrate 50 for sealing, in which insulation against the electronic component 4 is reliably ensured, the influence of noise due to electromagnetic waves on the electronic component 4 is accurately suppressed or prevented. It can be.
  • cooling of the film 100 for sealing and pressurization of an atmosphere may be cooled after pressurization, it is preferable to perform cooling and pressurization substantially simultaneously.
  • the film 100 for sealing can be coat
  • the sealing film-covered electronic component mounting substrate 50 in which the substrate 5 and the electronic component 4 are covered with the sealing film 100 can be obtained.
  • FIG. 19 is a longitudinal sectional view showing a tenth embodiment of a sealing film of the present invention
  • FIGS. 20A to 20C are diagrams for sealing an electronic component mounting substrate using the sealing film shown in FIG. It is a longitudinal cross-sectional view for demonstrating the stopping method.
  • the upper side in FIGS. 19 and 20 is referred to as “upper” and the lower side is referred to as “lower”.
  • the configuration of the insulating layer 12 included in the sealing film 100 is different, and the rest is the same as in the ninth embodiment.
  • the insulating layer 12 formed larger than the electromagnetic wave shielding layer 13 is compared with the insulating layer 12 of the ninth embodiment, as shown in FIGS. 19 and 20. And larger (longer along the surface direction).
  • the protrusion 16 (first protrusion) formed by protruding beyond the end portion of the electromagnetic wave shielding layer 13 is formed on the lower surface of the substrate 5 (when the sealing film 100 is coated). It becomes possible to fold to the other surface side. Therefore, the end portion 51 on the lower surface of the substrate 5 can be covered with the protruding portion 16.
  • the sealing film 100 according to the present embodiment can cover not only the upper surface side of the substrate 5 but also the end portion 51 on the lower surface of the substrate 5 with the insulating layer 12, so that the electronic component has better airtightness.
  • the mounting substrate 45 can be covered. Therefore, in the sealing film-covered electronic component mounting substrate 50 obtained by covering with the sealing film 100, the electronic component 4 on the substrate 5 is more accurately suppressed from coming into contact with external factors such as moisture and dust. Or it can be prevented.
  • the end portion 51 is formed by folding the protruding portion 16 from the upper surface side to the lower surface side of the substrate 5.
  • the linear expansion coefficient in the temperature range of 25 ° C. to 80 ° C. of the sealing film 100 is preferably 100 ppm / K or less.
  • the length of the protrusion part 16 of the insulating layer 12 which protrudes beyond the edge part of the electromagnetic wave shield layer 13 in the film 100 for sealing is not specifically limited, It may be 0.1 cm or more and 5.0 cm or less. Preferably, it is 0.5 cm or more and 2.5 cm or less.
  • the protrusion 16 can reach the end 51 on the lower surface of the substrate 5 while being folded from the upper surface side to the lower surface side of the substrate 5. It is possible to reliably realize the covering of the end portion 51 by the protruding portion 16.
  • the electronic component mounting substrate sealing method of this embodiment is such that the sealing film 100 is placed on the electronic component mounting substrate 45 with the insulating layer 12 facing the electronic component mounting substrate 45 so as to cover the substrate 5 and the electronic component 4. And placing the projecting portion 16 on the lower surface (the other surface) side of the substrate 5 to be brought into contact with the end portion 51 on the lower surface of the substrate 5, and heating and softening the sealing film 100.
  • the heating / depressurization step for reducing the pressure, and cooling and pressurizing the sealing film 100 cover the electronic component 4 with the electromagnetic wave shielding layer 13 through the insulating layer 12, and the protrusion 16 is formed on the substrate 5.
  • the sealing film 100 that is, the insulating layer 12 and the electromagnetic wave shielding layer 13 are softened.
  • the electronic component 4 is attached to the substrate 5 on the upper surface side of the substrate 5. It will be in the state which can follow the shape of the unevenness
  • the electronic component mounting substrate 45 and the sealing film 100 are arranged in a reduced-pressure atmosphere, so that not only the outside of the sealing film 100 but also the electronic component mounting substrate 45 and the sealing film 100 The gas (air) in between is degassed.
  • the sealing film 100 is extended, the shape of the unevenness 6 on the upper side of the substrate 5, that is, the shape of the electronic component 4 on the substrate 5 is slightly followed.
  • the part 51 is slightly covered.
  • the sealing film 100 can be made to follow the shape of the unevenness 6 formed on the upper surface side of the electronic component mounting substrate 45, and the protruding portion 16 is folded on the lower surface side of the substrate 5, The end portion 51 can be covered.
  • the space between the electronic component mounting substrate 45 and the sealing film 100 is degassed, and the decompressed state is maintained.
  • the sealing film 100 is further extended.
  • the upper side of the substrate 5 follows the shape of the unevenness 6 (the shape of the electronic component 4) with an excellent degree of adhesion (air density), and further covers the end portion 51 with an excellent degree of adhesion.
  • the substrate 5 and the electronic component 4 are covered with the sealing film 100 in a softened state.
  • the elongation at the softening point of the sealing film 100 is 150% or more and 3500% or less.
  • the sealing film 100 is cooled with the sealing film 100 in a state where the substrate 5 and the electronic component 4 are covered with the end 51 with excellent adhesion (airtightness).
  • the sealing film 100 is solidified while maintaining the state.
  • the substrate 5 and the electronic component 4 are in contact with the insulating layer 12 on the upper side of the substrate 5 by the sealing film 100 while following the shape of the irregularities 6 formed on the electronic component mounting substrate 45.
  • the sealing film-covered electronic component mounting substrate 50 is obtained in a state where the projecting portion 16 of the folded insulating layer 12 covers the end portion 51 below the substrate 5. Therefore, in the sealing film-covered electronic component mounting substrate 50, it is possible to more accurately suppress or prevent the electronic component 4 from coming into contact with external factors such as moisture and dust. Therefore, the reliability of the obtained electronic device including the sealing film-covered electronic component mounting substrate 50 and thus the sealing film-covered electronic component mounting substrate 50 can be improved.
  • the sealing film-covered electronic component mounting substrate 50 in which the substrate 5 and the electronic component 4 are covered with the sealing film 100 can be obtained.
  • FIG. 21 is a longitudinal sectional view showing an eleventh embodiment of a sealing film of the present invention
  • FIGS. 22 (a) to 22 (c) show sealing of an electronic component mounting substrate using the sealing film shown in FIG. It is a longitudinal cross-sectional view for demonstrating the stopping method.
  • the upper side in FIGS. 21 and 22 is referred to as “upper” and the lower side is referred to as “lower”.
  • the sealing film 100 includes a coating layer 14 laminated on the opposite side (upper surface side) of the electromagnetic wave shielding layer 13 to the insulating layer 12, and other than that, the tenth embodiment. It is the same.
  • the covering layer 14 is formed larger than the electromagnetic wave shielding layer 13 like the insulating layer 12 as shown in FIG. 21 and FIG. It is exposed from the end (edge) of the layer 13.
  • the coating layer 14 includes the protruding portion 15 (second protruding portion) formed by protruding beyond the end portion of the electromagnetic wave shielding layer 13. And these protrusion part 15 and protrusion part 16 form the lamination
  • the insulating layer 12 is on the lower side and the covering layer 14 is on the upper side. Then, the electronic component 4 is sealed with the electromagnetic wave shielding layer 13 through the insulating layer 12.
  • the electromagnetic wave shielding layer 13 is covered with the laminated protrusion 65 in which the protruding part 15 and the protruding part 16 protruding beyond the end of the electromagnetic wave shielding layer 13 are laminated. Therefore, since it is possible to more accurately prevent a short circuit from occurring between the electronic component 4 and the electromagnetic wave shielding layer 13, the electromagnetic wave shielding layer 13 is more reliably secured to the electronic component 4. Become.
  • the coating layer 14 that covers the upper surface of the electromagnetic wave shielding layer 13 is provided, insulation against other electronic components located outside the electronic component mounting substrate 45 can be ensured.
  • the laminated projection 65 formed by laminating the projection 15 and the projection 16 at the time of coating using the sealing film 100 is the bottom surface of the substrate 5 (the other side). It is configured so that it can be folded to the surface) side. Therefore, the end portion 51 on the lower surface of the substrate 5 can be covered with the protruding portion 16 included in the stacked protruding portion 65. Therefore, the sealing film 100 of the present embodiment can cover not only the upper surface side of the substrate 5 but also the end portion 51 on the lower surface of the substrate 5 with the laminated projecting portion 65, and has an excellent airtightness.
  • the component mounting board 45 can be covered. Therefore, in the sealing film-covered electronic component mounting substrate 50 obtained by covering with the sealing film 100, the electronic component 4 on the substrate 5 is more accurately suppressed from coming into contact with external factors such as moisture and dust. Or it can be prevented.
  • this coating layer 14 is comprised considering a resin material as a main material, and can use the material similar to the coating layer 12 of 2nd Embodiment mentioned above.
  • the elongation at the softening point is 150% or more and 3500% or less.
  • the linear expansion coefficient in the temperature range of 25 ° C. to 80 ° C. of the sealing film 100 is preferably 100 ppm / K or less. As described above, by defining the linear expansion coefficient of the sealing film 100, the folding of the laminated protrusion 65 from the upper surface side to the lower surface side of the substrate 5 is broken at the bent portion that bends the laminated protrusion 65. It can be carried out reliably without causing it.
  • stacking protrusion part 65 in the film 100 for sealing is not specifically limited, It is preferable that they are 0.1 cm or more and 5.0 cm or less, and it is more preferable that they are 0.5 cm or more and 2.5 cm or less. preferable.
  • the laminated protrusion 65 can reach the end 51 on the lower surface of the substrate 5 while being folded from the upper surface side to the lower surface side of the substrate 5. Therefore, it is possible to reliably realize the covering of the end portion 51 by the protruding portion 16.
  • the electronic component mounting substrate sealing method of this embodiment is such that the sealing film 100 is placed on the electronic component mounting substrate 45 with the insulating layer 12 facing the electronic component mounting substrate 45 so as to cover the substrate 5 and the electronic component 4.
  • the stacking protrusion 65 is placed on the lower surface (the other surface) side of the substrate 5 to be brought into contact with the end portion 51 on the lower surface of the substrate 5 and the sealing film 100 is heated and softened.
  • the heating / depressurization step for reducing the pressure, cooling the sealing film 100, and applying pressure to cover the electronic component 4 with the electromagnetic wave shielding layer 13 through the insulating layer 12, and the laminated protrusion 65 is A cooling / pressurizing step of sealing the substrate 5 and the electronic component 4 with the sealing film 100 while being in contact with the end portion 51 on the lower surface of the substrate 5;
  • the laminated protrusion 65 that protrudes beyond the end of the electromagnetic wave shielding layer 13 is folded to the lower surface side of the substrate 5, thereby bringing the laminated protrusion 65 into contact with the end 51 (FIG. 22B). )).
  • the sealing film 100 that is, the insulating layer 12, the electromagnetic wave shielding layer 13, and the coating layer 14 are softened.
  • the sealing film 100 that is, the insulating layer 12, the electromagnetic wave shielding layer 13, and the coating layer 14 are softened.
  • the sealing film 100 on the upper surface side of the substrate 5, It will be in the state which can follow the shape of the unevenness
  • the electronic component mounting substrate 45 and the sealing film 100 are arranged in a reduced-pressure atmosphere, so that not only the outside of the sealing film 100 but also the electronic component mounting substrate 45 and the sealing film 100 The gas (air) in between is degassed.
  • the sealing film 100 is extended, the shape of the unevenness 6 on the upper side of the substrate 5, that is, the shape of the electronic component 4 on the substrate 5 is slightly followed.
  • the part 51 is slightly covered.
  • the sealing film 100 can be made to follow the shape of the unevenness 6 formed on the upper surface side of the electronic component mounting substrate 45, and the laminated protrusion 65 is folded on the lower surface side of the substrate 5.
  • the end portion 51 can be covered.
  • the space between the electronic component mounting substrate 45 and the sealing film 100 is degassed, and the decompressed state is maintained.
  • the sealing film 100 is further extended.
  • the upper side of the substrate 5 follows the shape of the unevenness 6 (the shape of the electronic component 4) with an excellent degree of adhesion (air density), and further covers the end portion 51 with an excellent degree of adhesion.
  • the substrate 5 and the electronic component 4 are covered with the sealing film 100 in a softened state.
  • the coating layer 14 that covers the upper surface of the electromagnetic wave shielding layer 13 since the coating layer 14 that covers the upper surface of the electromagnetic wave shielding layer 13 is provided, insulation against other electronic components located outside the electronic component mounting substrate 45 can be ensured. Further, since the electromagnetic wave shielding layer 13 is covered with the laminated protrusion 65 in which the protruding parts 15 and 16 protruding beyond the end of the electromagnetic wave shielding layer 13 are laminated, the electronic component 4 and the electromagnetic wave shielding layer 13 are covered. Therefore, the electromagnetic wave shielding layer 13 is more reliably ensured of insulation against the electronic component 4.
  • the elongation at the softening point of the sealing film 100 is 150% or more and 3500% or less.
  • the sealing film 100 is cooled with the sealing film 100 in a state where the substrate 5 and the electronic component 4 are covered with the end 51 with excellent adhesion (airtightness).
  • the sealing film 100 is solidified while maintaining the state.
  • the substrate 5 and the electronic component 4 are in contact with the insulating layer 12 on the upper side of the substrate 5 by the sealing film 100 while following the shape of the irregularities 6 formed on the electronic component mounting substrate 45.
  • the film-covered electronic component mounting substrate 50 for sealing is obtained in a state where the folded laminated protrusion 65 covers the end 51 on the lower side of the substrate 5. Therefore, in the sealing film-covered electronic component mounting substrate 50, it is possible to more accurately suppress or prevent the electronic component 4 from coming into contact with external factors such as moisture and dust. Therefore, the reliability of the obtained electronic device including the sealing film-covered electronic component mounting substrate 50 and thus the sealing film-covered electronic component mounting substrate 50 can be improved.
  • the sealing film-covered electronic component mounting substrate 50 in which the substrate 5 and the electronic component 4 are covered with the sealing film 100 can be obtained.
  • FIG. 23 is a view showing a first reference form of a sealing film ((a) longitudinal sectional view, (b) plan view), and FIGS. 24 (a) to 24 (c) are the sealing films shown in FIG. It is a longitudinal cross-sectional view for demonstrating the sealing method of an electronic component mounting board
  • the upper side in FIGS. 23 and 24 is referred to as “upper” and the lower side is referred to as “lower”.
  • the sealing film 100 of this embodiment includes an innermost layer 12, an intermediate layer 19 laminated on one surface side (upper surface side) of the innermost layer 12, and an intermediate layer It is comprised with the laminated body provided with the outermost layer 14 laminated
  • the electronic component mounting substrate 45 covered with the sealing film 100 is mounted on the substrate 5 and the central portion on the upper surface (one surface) side of the substrate 5 as shown in FIG.
  • the electronic component 4 is placed (placed), and a connection member 7 that is electrically connected to the electronic component 4 and is mounted on an end portion on the upper surface (one surface) side of the substrate 5 and having an open end surface.
  • the mounting of the electronic component 4 on the upper surface of the substrate 5 forms the unevenness 6 including the convex portions 61 and the concave portions 62 on the substrate 5.
  • Examples of the substrate 5 include a printed wiring board, and examples of the electronic component 4 mounted on the substrate 5 include a semiconductor element, a capacitor, a coil, and a resistor.
  • Examples of the connection member 7 include a connector provided with a connection terminal used as an open end surface for data exchange between the electronic component 4 and another electronic component, electricity supply from the power source to the electronic component 4, and the like. .
  • the innermost layer 12 is on the lower side
  • the outermost layer 14 is on the upper side
  • the sealing film 100 is used.
  • the sealing film 100 that is, a laminate in which the innermost layer 12, the intermediate layer 19, and the outermost layer 14 are laminated in this order with the innermost layer 12 as the electronic component 4 side. Is sealed.
  • the sealing film-covered electronic component mounting substrate 50 obtained by covering the sealing film 100, the electronic component 4 on the substrate 5 is accurately contacted with external factors such as moisture and dust. It can be suppressed or prevented.
  • the sealing film 100 of the present embodiment has the escape portion 27 at a position corresponding to the connecting member 7 when the electronic component mounting substrate 45 is sealed, the connecting member 7 is used for sealing.
  • the film 100 can be exposed without being sealed. Accordingly, in the sealing film-covered electronic component mounting substrate 50, the electronic component mounting substrate 45 is sealed with the sealing film 100 while realizing the electrical connection between the electronic component mounting substrate 45 and another electronic component or a power source. It can be carried out.
  • connection member 7 is formed at the end portion on the upper surface of the substrate 5, and correspondingly, the escape portion 27 is for sealing in a plan view.
  • the end portion of the film 100 is constituted by a notch or a notch portion that is cut or missing in a U-shape.
  • the clearance portion 27 corresponds to the center of the sealing film 100 in plan view.
  • the part is composed of an opening (hole) having a square shape.
  • the innermost layer 12, the intermediate layer 19 and the outermost layer 14 all contain a resin material, and the elongation at the softening point required in accordance with JIS K 6251 is 150.
  • the elongation at the softening point of the sealing film 100 is within such a range, when the electronic component mounting substrate 45 is covered with the sealing film 100, the convex portion 61 and the concave portion included in the electronic component mounting substrate 45 are provided.
  • the electronic component 4 can be covered in a state in which the unevenness 6 composed of 62 is sealed with excellent followability. Therefore, in the sealing film-covered electronic component mounting substrate 50 obtained by covering the sealing film 100, the electronic component 4 on the substrate 5 is more accurately brought into contact with external factors such as moisture and dust. It can be suppressed or prevented. Accordingly, the reliability of the obtained electronic device including the sealing film-covered electronic component mounting substrate 50 and thus the sealing film-covered electronic component mounting substrate 50 can be improved.
  • the sealing film 100 can be made to follow the shape of the irregularities 6.
  • the sealing film 100 that can satisfy the elongation is provided.
  • the layer configuration of the innermost layer 12, the intermediate layer 19, and the outermost layer 14 provided will be described.
  • the innermost layer 12, the intermediate layer 19 and the outermost layer 14 included in the sealing film 100 having an elongation at the softening point of 150% or more and 3500% or less each contain a resin material.
  • the elongation at the softening point can be set within the range.
  • a resin material the same resin materials as those of the insulating layer 12, the electromagnetic wave shielding layer 13, and the covering layer 14 described above can be used.
  • the resin materials contained in the innermost layer 12, the intermediate layer 19 and the outermost layer 14 may be a thermosetting resin such as an epoxy resin, a phenol resin, a melamine resin, or a silicone resin, or an acrylic resin in addition to the thermoplastic resin material described above.
  • a UV curable resin such as a resin or a urethane resin may be included.
  • each of the innermost layer 12, the intermediate layer 19 and the outermost layer 14 containing the resin material as described above is formed of the resin material. It is comprised by the layer which contains (thermoplastic resin material) as a main material, and functions as an insulating layer which has insulation by this.
  • the sealing film 100 including the innermost layer 12, the intermediate layer 19, and the outermost layer 14 each containing a resin material, having the above-described configuration, includes a polyolefin-based resin as the resin material among the resin materials described above.
  • the layer to be provided is provided as at least one of the innermost layer 12, the intermediate layer 19, and the outermost layer 14.
  • the elongation at the softening point of the sealing film 100 can be set to 150% or more and 3500% or less more reliably.
  • the innermost layer 12 containing the resin material as a main material, the intermediate layer 19, and the outermost layer 14 are provided, and the resin materials contained in the innermost layer 12 and the outermost layer 14 are both polyolefin-based resins.
  • the sealing film 100 will be described as an example.
  • the elongation at the softening point of the sealing film 100 is set to 150% or more and 3500% or less, and the adhesiveness to the irregularities 6 and the shape followability are excellent.
  • the layer contains an ethylene-vinyl acetate copolymer as a polyolefin resin (ethylene copolymer) as a main material.
  • the innermost layer 12 has the same configuration as that of the insulating layer 12 of each embodiment described above.
  • the innermost layer 12 is a layer having an insulating property by containing an ethylene-vinyl acetate copolymer as a resin material as a main material.
  • an ethylene-vinyl acetate copolymer as a resin material as a main material.
  • the VA content to be copolymerized is preferably 5% by weight to 30% by weight, and more preferably 10% by weight to 20% by weight. If it is less than the lower limit, it may be difficult to set the elongation at the softening point of the sealing film 100 within the above range. On the other hand, when the upper limit is exceeded, the antioxidant remaining in the innermost layer 12 due to the tendency that the crystal part of the resin constituting the innermost layer 12 decreases and the amorphous part increases. Such additives may be eluted. For this reason, the electronic component mounting board 45 side is shifted, and as a result, there is a possibility that the characteristics of the electronic component 4 may be inconvenient.
  • the average thickness of the innermost layer 12 is preferably 5 ⁇ m or more and 200 ⁇ m or less, and more preferably 20 ⁇ m or more and 120 ⁇ m or less.
  • the elongation at the softening point of the sealing film 100 can be reliably set within a range of 150% to 3500%.
  • the insulation of the intermediate layer 19 with respect to the electronic component 4 can be more reliably ensured.
  • the resin material contained in the innermost layer 12 may be an ionomer resin contained in an intermediate layer 19 described later, in addition to an ethylene-vinyl acetate copolymer as a polyolefin resin (ethylene copolymer).
  • Polyolefin resins other than ethylene-vinyl acetate copolymer may be used.
  • the intermediate layer 19 is set to have an elongation at the softening point of the sealing film 100 of 150% or more and 3500% or less so as to have excellent adhesion to the unevenness 6 and shape followability.
  • an ionomer resin is contained as a resin material for the purpose of making the stop film 100 excellent in toughness.
  • Such an intermediate layer 19 covers the electronic component 4 arranged on the upper side of the substrate 5 through the innermost layer 12 when the electronic component mounting substrate 45 is covered with the sealing film 100.
  • the ionomer resin as the resin material means a binary copolymer containing ethylene and (meth) acrylic acid as a constituent component of the polymer, ethylene, (meth) acrylic acid and (meta )
  • a resin obtained by crosslinking a terpolymer having an acrylic ester as a constituent of a polymer with a metal ion, and one or two of them can be used in combination.
  • Examples of the metal ion include potassium ion (K + ), sodium ion (Na + ), lithium ion (Li + ), magnesium ion (Mg ++ ), and zinc ion (Zn ++ ).
  • potassium ion (K + ) sodium ion (Na + ), lithium ion (Li + ), magnesium ion (Mg ++ ), and zinc ion (Zn ++ ).
  • sodium ions (Na + ) or zinc ions (Zn ++ ) are preferable.
  • a binary copolymer having ethylene and (meth) acrylic acid as constituent components of the polymer or a ternary copolymer having ethylene, (meth) acrylic acid and (meth) acrylic acid ester as constituent components of the polymer.
  • the degree of neutralization by the cation (metal ion) in the carboxyl group of the polymer is preferably 40 mol% or more and 75 mol% or less.
  • the average thickness of the intermediate layer 19 is preferably 1 ⁇ m or more and 400 ⁇ m or less, and more preferably 5 ⁇ m or more and 200 ⁇ m or less.
  • the sealing film 100 is excellent in toughness, and the elongation at the softening point of the sealing film 100 is in the range of 150% to 3500%. It can be assumed that it is securely set within.
  • the resin material contained in the intermediate layer 19 may be an ionomer resin, an ethylene-vinyl acetate copolymer contained in the innermost layer 12 and the outermost layer 14, or other polyolefin resin.
  • the elongation at the softening point of the sealing film 100 is set to 150% or more and 3500% or less, and the adhesion to the unevenness 6 and the shape followability are excellent.
  • the layer contains an ethylene-vinyl acetate copolymer as a polyolefin resin (ethylene copolymer) as a main material.
  • the outermost layer 14 has the same configuration as the coating layer 14 of each embodiment described above.
  • the outermost layer 14 is an insulating layer that contains an ethylene-vinyl acetate copolymer as a resin material as a main material.
  • the sealing film 100 When the electronic component mounting substrate 45 is covered with the sealing film 100, It functions as a layer for ensuring insulation against other electronic components located outside the electronic component mounting board 45.
  • the VA content to be copolymerized is set within the same range as the VA content to be copolymerized shown in the innermost layer 12 described above.
  • the average thickness of the outermost layer 14 is preferably 5 ⁇ m or more and 200 ⁇ m or less, and more preferably 20 ⁇ m or more and 120 ⁇ m or less.
  • the elongation at the softening point of the sealing film 100 can be reliably set within a range of 150% to 3500%.
  • substrate 50 for sealing can be ensured more reliably.
  • the resin material contained in the outermost layer 14 as with the innermost layer 12 in addition to the ethylene-vinyl acetate copolymer as a polyolefin resin (ethylene copolymer), the ionomer contained in the intermediate layer 19 described above. It may be a resin or a polyolefin resin other than an ethylene-vinyl acetate copolymer.
  • an adhesive layer may be provided.
  • an adhesive layer can be provided inside the innermost layer 12, that is, between the innermost layer 12 and the substrate 5, as necessary.
  • Examples of the adhesive resin contained in the adhesive layer include EVA, ethylene-maleic anhydride copolymer, EAA, EEA, ethylene-methacrylate-glycidyl acrylate terpolymer, or various polyolefins such as acrylic acid, methacrylic acid, Monobasic unsaturated fatty acids such as acids, dibasic unsaturated fatty acids such as maleic acid, fumaric acid, itaconic acid or the like grafted with these anhydrides, such as maleic acid grafted EVA, maleic acid grafted ethylene
  • Known adhesive resins and adhesive resins such as - ⁇ -olefin copolymers, styrene elastomers, acrylic resins, epoxy resins, polyurethane resins and the like can be used as appropriate.
  • the manufacturing method for manufacturing the sealing film 100 including the relief portion 27 in which the innermost layer 12, the intermediate layer 19, and the outermost layer 14 are laminated is not particularly limited. After forming and laminating using a laminating method, an extrusion laminating method, a coating laminating method, etc., it is possible to obtain the relief portion 27 by cutting out a position corresponding to the connecting member 7.
  • the sealing film 100 by comparing the sealing film 100 with a multilayer body including the innermost layer 12, the intermediate layer 19, and the outermost layer 14 having the above-described configuration, the elongation at the softening point of the sealing film 100 is compared. It can be easily set to 150% or more and 3500% or less.
  • the sealing film 100 may have a two-layer configuration in which the outermost layer 14 is omitted.
  • the outermost layer 14 and the intermediate layer 19 may be omitted to have a single layer configuration. That is, the sealing film 100 only needs to have one or more layers mainly composed of a thermoplastic resin such as a polyolefin-based resin.
  • the elongation at break (elongation at the softening point) can be measured according to the method described in JIS K 6251 using an autograph device (for example, AUTOGRAPH AGS-X manufactured by Shimadzu Corporation). it can.
  • the softening point of the sealing film 100 is determined by using a dynamic viscoelasticity measuring apparatus (for example, EXSTAR6000 manufactured by Seiko Instruments Inc.), a distance between chucks of 20 mm, a heating rate of 5 ° C./min, and an angular frequency of 10 Hz. It can be measured under the following conditions.
  • a dynamic viscoelasticity measuring apparatus for example, EXSTAR6000 manufactured by Seiko Instruments Inc.
  • the linear expansion coefficient in the temperature range of 25 ° C. or more and 80 ° C. or less of the sealing film 100 is preferably 100 ppm / K or less, and more preferably 5 ppm / K or more and 50 ppm / K or less.
  • the linear expansion coefficient in the temperature range of 25 ° C. or higher and 80 ° C. or lower of the sealing film 100 is a value in such a range, the sealing film 100 is excellent when the sealing film 100 is heated. Since it has a stretching property, the shape followability with respect to the unevenness 6 of the sealing film 100 can be improved more reliably.
  • the linear expansion coefficient of the sealing film 100 can be calculated using, for example, a dynamic viscoelasticity measuring apparatus (for example, EXSTAR6000 manufactured by Seiko Instruments Inc.).
  • the average thickness of the sealing film 100 as a whole is preferably 10 ⁇ m or more and 700 ⁇ m or less, and more preferably 20 ⁇ m or more and 400 ⁇ m or less. By setting the average thickness of the sealing film 100 within this range, the sealing film 100 can be accurately suppressed or prevented from breaking in the middle of the sealing film 100, and for sealing. The elongation at the softening point of the film 100 can be reliably set within a range of 150% to 3500%.
  • the sealing method of the electronic component mounting substrate according to the present embodiment is such that the innermost layer 12 is placed on the electronic component mounting substrate 45 side so as to cover the substrate 5 and the electronic component 4 and the escape portion 27 corresponds to the connecting member 7. While placing the sealing film 100 on the electronic component mounting substrate 45, heating and softening the sealing film 100, heating and decompressing the pressure, and cooling the sealing film 100, By pressurizing, it has the cooling and pressurization process which seals the board
  • the sealing film 100 that is, the innermost layer 12, the intermediate layer 19, and the outermost layer 14 are softened.
  • electrons are transferred to the substrate 5. It will be in the state which can follow the shape of the unevenness
  • the electronic component mounting substrate 45 and the sealing film 100 are arranged in a reduced-pressure atmosphere, so that not only the outside of the sealing film 100 but also the electronic component mounting substrate 45 and the sealing film 100 The gas (air) in between is degassed.
  • the shape of the unevenness 6, that is, the shape of the electronic component 4 on the substrate 5 is slightly followed on the upper side of the substrate 5.
  • the sealing film 100 can be made to follow the shape of the irregularities 6 formed on the upper surface side of the electronic component mounting substrate 45.
  • the heating of the sealing film 100 and the reduced pressure of the atmosphere may be reduced after the heating or may be heated after the reduced pressure, but it is preferable to perform the heating and the reduced pressure almost simultaneously. Thereby, the softened film 100 for sealing can be made into the state which followed the shape of the unevenness
  • the space between the electronic component mounting substrate 45 and the sealing film 100 is degassed, and the decompressed state is maintained.
  • the sealing film 100 is further extended.
  • the connection member 7 is not exposed and sealed from the escape portion 27, and follows the shape of the unevenness 6 (the shape of the electronic component 4) with excellent adhesion (air density).
  • the substrate 5 and the electronic component 4 are covered with the sealing film 100 in a softened state.
  • the pressing step can be omitted if the sealing film 100 sufficiently follows the shape of the irregularities 6.
  • the elongation at the softening point of the sealing film 100 is preferably 150% or more and 3500% or less.
  • the film 100 for sealing can be extended with the more excellent shape followability with respect to the unevenness
  • the sealing film 100 is covered with the sealing film 100 with excellent adhesion (airtightness) and the connecting member 7 is exposed from the escape portion 27. By cooling, the sealing film 100 is solidified while maintaining this state.
  • the innermost layer 12 comes into contact with the upper side of the substrate 5 and the substrate 5 and the electronic component 4 are covered by the sealing film 100 while following the shape of the unevenness 6 formed on the electronic component mounting substrate 45.
  • the sealing film-covered electronic component mounting substrate 50 in which the connection member 7 is exposed from the escape portion 27 is obtained. Therefore, in the sealing film-covered electronic component mounting substrate 50, it is possible to accurately suppress or prevent the electronic component 4 from coming into contact with external factors such as moisture and dust. Accordingly, the reliability of the obtained electronic device including the sealing film-covered electronic component mounting substrate 50 and thus the sealing film-covered electronic component mounting substrate 50 can be improved.
  • cooling of the film 100 for sealing and pressurization of an atmosphere may be cooled after pressurization, it is preferable to perform cooling and pressurization substantially simultaneously.
  • the film 100 for sealing can be coat
  • the sealing film-covered electronic component mounting substrate 50 in which the substrate 5 and the electronic component 4 are covered with the sealing film 100 and the connection member 7 is exposed from the escape portion 27 is obtained. be able to.
  • FIG. 25 is a view showing a twelfth embodiment of the sealing film of the present invention ((a) longitudinal sectional view, (b) plan view), and FIGS. 26 (a) to 26 (c) are views shown in FIG. It is a longitudinal cross-sectional view for demonstrating the sealing method of an electronic component mounting board
  • the upper side in FIGS. 25 and 26 is referred to as “upper” and the lower side is referred to as “lower”.
  • the film 100 for sealing is comprised by the laminated body provided with the electromagnetic wave shielding layer 13 which has electromagnetic wave shielding properties, and other than that is the same as that of the said 1st reference form. .
  • the sealing film 100 includes an insulating layer (innermost layer) 12 and an electromagnetic wave shield laminated on one surface side (upper surface side) of the insulating layer 12 as shown in FIGS. It is comprised with the laminated body provided with the layer 13 and the coating layer (outermost layer) 14 laminated
  • the electromagnetic wave shielding layer 13 is ensured to be insulated from the electronic component 4. . Furthermore, the electromagnetic wave shielding layer 13 is covered with an insulating coating layer 14 on the surface opposite to the electronic component 4. For this reason, the electromagnetic wave shielding layer 13 is also provided with insulation against other electronic components located outside the obtained sealing film-covered electronic component mounting substrate 50.
  • the insulating layer 12, the electromagnetic wave shielding layer 13 and the coating layer 14 all contain a resin material, and conform to JIS K 6251 as in the first embodiment.
  • the elongation at the softening point required is 150% or more and 3500% or less, preferably 1000% or more and 3500% or less.
  • the layer configuration of the insulating layer 12, the electromagnetic wave shielding layer 13, and the coating layer 14 included in the sealing film 100 that satisfies the elongation rate will be described.
  • the insulating layer 12, the electromagnetic wave shielding layer 13 and the coating layer 14 included in the sealing film 100 having an elongation at the softening point of 150% or more and 3500% or less are as described in the first embodiment.
  • the same resin material is contained.
  • the insulating layer 12 and the coating layer 14 among the insulating layer 12, the electromagnetic wave shielding layer 13, and the coating layer 14 containing a resin material are included. Is composed of a layer containing the resin material (thermoplastic resin) as a main material, and the electromagnetic wave shielding layer 13 is a layer containing the resin material (thermoplastic resin) and conductive particles having conductivity. Composed.
  • the electromagnetic wave shielding layer 13 and the covering layer 14 function as an insulating layer and a covering layer having insulating properties, respectively. Functions as an electromagnetic wave shielding layer having an electromagnetic wave shielding property and further conductivity.
  • the sealing film 100 including the insulating layer 12, the electromagnetic wave shielding layer 13, and the coating layer 14 each including the resin material, having the above-described configuration, is made of the resin material described above, as in the first embodiment.
  • a layer containing a polyolefin-based resin as the resin material is preferably provided as at least one of the insulating layer 12, the electromagnetic wave shielding layer 13, and the coating layer 14.
  • the insulating layer 12 and the covering layer 14 containing the resin material as main materials, and the electromagnetic wave shielding layer 13 containing the resin material and conductive particles are provided.
  • the sealing film 100 in which both of the resin materials included are polyolefin resins will be described as an example.
  • the elongation at the softening point of the sealing film 100 is set to 150% or more and 3500% or less so that the adhesiveness to the unevenness 6 and the shape followability are excellent.
  • the layer contains an ethylene-vinyl acetate copolymer as a polyolefin resin (ethylene copolymer) as a main material.
  • the insulating layer 12 is a layer having an insulating property by containing an ethylene-vinyl acetate copolymer as a main material as a resin material.
  • an ethylene-vinyl acetate copolymer as a main material as a resin material.
  • the VA content to be copolymerized is preferably 5% by weight to 30% by weight, as in the first embodiment, and is preferably 10% by weight to 20% by weight. It is more preferable that
  • the average thickness of the insulating layer 12 is preferably 5 ⁇ m or more and 200 ⁇ m or less, and more preferably 20 ⁇ m or more and 120 ⁇ m or less, as in the first embodiment. Thereby, the insulation with respect to the electronic component 4 of the electromagnetic wave shield layer 13 can be ensured more reliably.
  • the electromagnetic wave shielding layer 13 has an elongation at the softening point of the sealing film 100 set to 150% or more and 3500% or less, and has excellent adhesion to the unevenness 6 and shape followability,
  • an ionomer resin is contained as a resin material.
  • the resin material (ionomer) also functions as a binder that holds the following conductive material in the layer.
  • the electromagnetic wave shielding layer 13 is a layer having electromagnetic wave shielding properties and further conductivity by containing conductive particles having conductivity in addition to the ionomer resin as a resin material.
  • Such an electromagnetic wave shielding layer 13 covers the electronic component 4 disposed on the upper side of the substrate 5 via the insulating layer 12 when the electronic component mounting substrate 45 is covered with the sealing film 100. Therefore, the influence of noise due to electromagnetic waves on the electronic component 4 is accurately suppressed or prevented in the sealing film-covered electronic component mounting substrate 50 obtained by covering the electronic component mounting substrate 45 with the sealing film 100. Can be.
  • the same resin as described in the first embodiment can be used.
  • the same conductive particles as those described in the first embodiment can be used.
  • the content of the conductive particles in the electromagnetic wave shielding layer 13 is preferably 10% by weight or more and 95% by weight or less, and more preferably 50% by weight or more and 90% by weight or less.
  • the electromagnetic wave shielding layer 13 is reliably imparted with electromagnetic wave shielding property and further conductivity, and the elongation at the softening point of the sealing film 100 is 150% or more. It can be reliably set within a range of 3500% or less.
  • the average thickness of the electromagnetic wave shielding layer 13 is preferably 1 ⁇ m or more and 400 ⁇ m or less, and more preferably 5 ⁇ m or more and 200 ⁇ m or less.
  • the sealing film 100 is excellent in toughness, and the elongation at the softening point of the sealing film 100 is 150% or more and 3500% or less. It can be reliably set within the range.
  • the electromagnetic wave shielding layer 13 can be reliably imparted with electromagnetic wave shielding properties and further conductivity.
  • the resin material contained in the electromagnetic shielding layer 13 may be an ionomer resin, an ethylene-vinyl acetate copolymer contained in the insulating layer 12 and the coating layer 14, or other polyolefin resin.
  • the elongation at the softening point of the sealing film 100 is set to 150% or more and 3500% or less, and the coating layer 14 is excellent in adhesion to the unevenness 6 and shape followability.
  • the layer contains an ethylene-vinyl acetate copolymer as a polyolefin resin (ethylene copolymer) as a main material.
  • the coating layer 14 is a layer having an insulating property by containing an ethylene-vinyl acetate copolymer as a resin material as a main material.
  • an ethylene-vinyl acetate copolymer as a resin material as a main material.
  • the VA content to be copolymerized is set within the same range as the VA content to be copolymerized shown in the insulating layer 12 of the first embodiment.
  • the average thickness of the coating layer 14 is preferably 5 ⁇ m or more and 200 ⁇ m or less, and more preferably 20 ⁇ m or more and 120 ⁇ m or less. Thereby, the insulation of the electromagnetic wave shield layer 13 with respect to the electronic component located outside the sealing film-covered electronic component mounting substrate 50 can be more reliably ensured.
  • the resin material contained in the coating layer 14 is contained in the electromagnetic wave shielding layer 13 as well as the ethylene-vinyl acetate copolymer as a polyolefin resin (ethylene copolymer), as in the case of the insulating layer 12. It may be an ionomer resin or a polyolefin resin other than an ethylene-vinyl acetate copolymer.
  • an adhesive layer may be provided in order to improve the adhesiveness between the insulating layer 12 and the electronic component mounting substrate 45.
  • the same resin as described in the first embodiment can be used.
  • the insulating layer 12 is placed on the electronic component mounting substrate 45 side so as to cover the substrate 5 and the electronic component 4 and the escape portion 27 corresponds to the connecting member 7. While placing the sealing film 100 on the electronic component mounting substrate 45, heating and softening the sealing film 100, heating and decompressing the pressure, and cooling the sealing film 100, It has the cooling and pressurization process which seals the board
  • the electronic component mounting substrate 45 and the sealing film 100 are arranged in a reduced-pressure atmosphere, so that not only the outside of the sealing film 100 but also the electronic component mounting substrate 45 and the sealing film 100 The gas (air) in between is degassed.
  • the shape of the unevenness 6, that is, the shape of the electronic component 4 on the substrate 5 is slightly followed on the upper side of the substrate 5.
  • the sealing film 100 can be made to follow the shape of the irregularities 6 formed on the upper surface side of the electronic component mounting substrate 45.
  • the heating of the sealing film 100 and the reduced pressure of the atmosphere may be reduced after the heating or may be heated after the reduced pressure, but it is preferable to perform the heating and the reduced pressure almost simultaneously. Thereby, the softened film 100 for sealing can be made into the state which followed the shape of the unevenness
  • the space between the electronic component mounting substrate 45 and the sealing film 100 is degassed, and the decompressed state is maintained.
  • the sealing film 100 is further extended.
  • the connection member 7 is not exposed and sealed from the escape portion 27, and follows the shape of the unevenness 6 (the shape of the electronic component 4) with excellent adhesion (air density).
  • the substrate 5 and the electronic component 4 are covered with the sealing film 100 in a softened state.
  • the pressing step can be omitted if the sealing film 100 sufficiently follows the shape of the irregularities 6.
  • the elongation at the softening point of the sealing film 100 is preferably 150% or more and 3500% or less.
  • the sealing film 100 is covered with the sealing film 100 with excellent adhesion (airtightness) and the connecting member 7 is exposed from the escape portion 27. By cooling, the sealing film 100 is solidified while maintaining this state.
  • the insulating layer 12 contacts the upper side of the substrate 5 and the substrate 5 and the electronic component 4 are covered by the sealing film 100 in a state of following the shape of the unevenness 6 formed on the electronic component mounting substrate 45.
  • the sealing film-covered electronic component mounting substrate 50 in which the connection member 7 is exposed from the escape portion 27 is obtained. Therefore, in the sealing film-covered electronic component mounting substrate 50, it is possible to accurately suppress or prevent the electronic component 4 from coming into contact with external factors such as moisture and dust. Accordingly, the reliability of the obtained electronic device including the sealing film-covered electronic component mounting substrate 50 and thus the sealing film-covered electronic component mounting substrate 50 can be improved.
  • the sealing film 100 used for covering the electronic component mounting substrate 45 as described above is composed of a laminate of the insulating layer 12, the electromagnetic wave shielding layer 13, and the covering layer 14.
  • the electronic component 4 is covered with the electromagnetic wave shielding layer 13 through the insulating layer 12. Therefore, the obtained film-covered electronic component mounting substrate 50 for sealing can be one in which the influence of noise due to electromagnetic waves on the electronic component 4 is appropriately suppressed or prevented.
  • the electromagnetic wave shielding layer 13 covers the electronic component 4 in a state in which insulation against the electronic component 4 is secured. be able to. Moreover, since the electromagnetic wave shielding layer 13 is covered with the coating layer 14 on the surface opposite to the electronic component 4, the electromagnetic wave shielding layer 13 is disposed outside the obtained film-covered electronic component mounting substrate 50 for sealing.
  • the electronic component mounting substrate 45 can be covered with insulation of other electronic components that are positioned.
  • cooling of the film 100 for sealing and pressurization of an atmosphere may be cooled after pressurization, it is preferable to perform cooling and pressurization substantially simultaneously.
  • the film 100 for sealing can be coat
  • the sealing film-covered electronic component mounting substrate 50 in which the substrate 5 and the electronic component 4 are covered with the sealing film 100 and the connection member 7 is exposed from the escape portion 27 is obtained. be able to.
  • FIG. 27 is a diagram ((a) longitudinal sectional view, (b) plan view) showing a thirteenth embodiment of the sealing film of the present invention
  • FIG. 28 is an electron using the sealing film shown in FIG. It is a longitudinal cross-sectional view for demonstrating the sealing method of a component mounting board.
  • the upper side in FIGS. 27 and 28 is referred to as “upper” and the lower side is referred to as “lower”.
  • the structure of the coating layer 14 with which the film 100 for sealing is provided differs, and other than that is the same as that of the said 12th Embodiment.
  • the covering layer 14 is formed larger than the electromagnetic wave shielding layer 13 as shown in FIGS. 27 and 28, and the end portion thereof is the end portion (edge) of the electromagnetic wave shielding layer 13.
  • a protrusion 15 first protrusion formed by protruding beyond the end of the electromagnetic wave shielding layer 13 is provided.
  • the coating layer 14 has the insulating layer 12 on the lower side with respect to the electronic component mounting substrate 45 on which the electronic component 4 and the connection member 7 are mounted on the upper surface (one surface) side.
  • the electronic component 4 is sealed with the electromagnetic wave shielding layer 13 through the insulating layer 12 without being exposed and sealed from the escape portion 27.
  • the projecting portion 15 included in the coating layer 14 is configured to be able to be folded to the lower surface (the other surface) side of the substrate 5 at the time of coating using the sealing film 100.
  • the end portion 51 on the lower surface of the substrate 5 can be covered with the protruding portion 15. Therefore, the sealing film 100 according to the present embodiment can cover not only the upper surface side of the substrate 5 but also the end portion 51 on the lower surface of the substrate 5 with the coating layer 14, and the electronic component with better airtightness.
  • the mounting substrate 45 can be covered. Therefore, in the sealing film-covered electronic component mounting substrate 50 obtained by covering with the sealing film 100, the electronic component 4 on the substrate 5 is more accurately suppressed from coming into contact with external factors such as moisture and dust. Or it can be prevented.
  • the elongation at the softening point is 150% or more and 3500% or less.
  • the linear expansion coefficient in the temperature range of 25 ° C. to 80 ° C. of the sealing film 100 is preferably 100 ppm / K or less.
  • the length of the protrusion part 15 of the coating layer 14 which protrudes beyond the edge part of the electromagnetic wave shield layer 13 in the film 100 for sealing is not specifically limited, It may be 0.1 cm or more and 5.0 cm or less. Preferably, it is 0.5 cm or more and 2.5 cm or less.
  • the protruding portion 15 can reach the end portion 51 on the lower surface of the substrate 5 while being folded from the upper surface side of the substrate 5 to the lower surface side. It is possible to reliably realize the covering of the end portion 51 by the protruding portion 15.
  • the insulating layer 12 is placed on the electronic component mounting substrate 45 side so as to cover the substrate 5 and the electronic component 4 and the escape portion 27 corresponds to the connecting member 7.
  • a cooling / pressurizing step of sealing the substrate 5 and the electronic component 4 with the sealing film 100 in a contact state is provided.
  • the sealing film 100 that is, the insulating layer 12, the electromagnetic wave shielding layer 13, and the covering layer 14 are softened.
  • the substrate 5 In this state, it is possible to follow the shape of the irregularities 6 formed by mounting the electronic component 4 on the substrate 5, and the end 51 can be covered on the lower surface side of the substrate 5.
  • the electronic component mounting substrate 45 and the sealing film 100 are arranged in a reduced-pressure atmosphere, so that not only the outside of the sealing film 100 but also the electronic component mounting substrate 45 and the sealing film 100 The gas (air) in between is degassed.
  • the sealing film 100 extends, the shape of the unevenness 6 on the upper surface side of the substrate 5, that is, the shape of the electronic component 4 on the substrate 5 is slightly followed, and on the lower surface side of the substrate 5, The end 51 is slightly covered.
  • the sealing film 100 can be made to follow the shape of the unevenness 6 formed on the upper surface side of the electronic component mounting substrate 45, and the protrusion 15 is folded to the lower surface side of the substrate 5, The end portion 51 can be covered.
  • the space between the electronic component mounting substrate 45 and the sealing film 100 is degassed, and the decompressed state is maintained.
  • the sealing film 100 is further extended.
  • connection member 7 is not exposed and sealed from the escape portion 27, and has excellent adhesion (air density) with respect to the shape of the unevenness 6 (the shape of the electronic component 4). Further, the substrate 5 and the electronic component 4 are covered with the softened sealing film 100 in a state where it is covered with an excellent degree of adhesion to the end portion 51.
  • the elongation at the softening point of the sealing film 100 is 150% or more and 3500% or less.
  • the film 100 for sealing can be extended with the more excellent shape followable
  • the film 100 can cover the substrate 5 and the electronic component 4 on the upper side of the substrate 5 and the end portion 51 with excellent adhesion.
  • the protruding portion 15 is folded from the upper surface side to the lower surface side of the substrate 5 to be brought into contact with the end portion 51, it is possible to accurately suppress or prevent the protruding portion 15 from being broken at the bent portion. Can do.
  • the sealing film 100 covers the substrate 5 and the electronic component 4, and further covers the end portion 51 with excellent adhesion (airtightness), and the connection member 7 is exposed from the escape portion 27.
  • the sealing film 100 is solidified while maintaining this state.
  • the insulating layer 12 is brought into contact with the upper side of the substrate 5 by the sealing film 100 in a state following the shape of the unevenness 6 formed on the electronic component mounting substrate 45, so that the substrate 5 and the electronic component 4 are Film-sealing electronic component for sealing, in which the connecting member 7 is exposed from the escape portion 27 and the end portion 51 is covered with the protruding portion 15 of the folded covering layer 14 on the lower surface side of the substrate 5
  • the mounting substrate 50 is obtained. Therefore, in the sealing film-covered electronic component mounting substrate 50, it is possible to more accurately suppress or prevent the electronic component 4 from coming into contact with external factors such as moisture and dust. Therefore, the reliability of the obtained electronic device including the sealing film-covered electronic component mounting substrate 50 and thus the sealing film-covered electronic component mounting substrate 50 can be improved.
  • the sealing film-covered electronic component mounting substrate 50 in which the substrate 5 and the electronic component 4 are covered with the sealing film 100 and the connection member 7 is exposed from the escape portion 27 is obtained. be able to.
  • FIG. 29 is a view showing a fourth embodiment of the sealing film of the present invention ((a) longitudinal sectional view, (b) plan view), and FIGS. 30 (a) to 30 (c) are the seals shown in FIG. It is a longitudinal cross-sectional view for demonstrating the sealing method of an electronic component mounting board
  • the upper side in FIGS. 29 and 30 is referred to as “upper” and the lower side is referred to as “lower”.
  • the configurations of the insulating layer 12 and the covering layer 14 included in the sealing film 100 are different, and the other configurations are the same as those in the twelfth embodiment.
  • the insulating layer 12 and the covering layer 14 are each formed larger than the electromagnetic wave shielding layer 13, and their end portions are electromagnetic wave shields.
  • the protrusion 15 (first protrusion) and the protrusion 16 (first protrusion) formed by being exposed from the end (edge) of the layer 13, in other words, protruding beyond the end of the electromagnetic wave shielding layer 13. 3 protrusions). And these protrusion part 15 and protrusion part 16 form the lamination
  • the coating layer 14 has the insulating layer 12 on the lower side with respect to the electronic component mounting substrate 45 on which the electronic component 4 and the connection member 7 are mounted on the upper surface (one surface) side.
  • the electronic component 4 is sealed with the electromagnetic wave shielding layer 13 through the insulating layer 12 without being exposed and sealed from the escape portion 27.
  • the laminated projection 65 formed by laminating the projection 15 and the projection 16 at the time of coating using the sealing film 100 is the bottom surface of the substrate 5 (the other side). It is configured so that it can be folded to the surface) side. Therefore, the end portion 51 on the lower surface of the substrate 5 can be covered with the protruding portion 15 included in the stacked protruding portion 65. Therefore, the sealing film 100 of the present embodiment can cover not only the upper surface side of the substrate 5 but also the end portion 51 on the lower surface of the substrate 5 with the laminated projecting portion 65, and has an excellent airtightness.
  • the component mounting board 45 can be covered. Therefore, in the sealing film-covered electronic component mounting substrate 50 obtained by covering with the sealing film 100, the electronic component 4 on the substrate 5 is more accurately suppressed from coming into contact with external factors such as moisture and dust. Or it can be prevented.
  • the laminated protrusion 65 is formed by laminating the protrusion 15 and the protrusion 16 at a position beyond the end of the electromagnetic wave shielding layer 13, and the end of the electromagnetic wave shielding layer 13 is also formed on the insulating layer 12.
  • the covering layer 14 By covering with the covering layer 14, the insulating property of the electromagnetic wave shielding layer 13 with respect to the electronic component 4 and the electronic component located outside the electronic component mounting board 45 can be more reliably ensured.
  • the elongation at the softening point of the sealing film 100 is 150% or more and 3500% or less.
  • the linear expansion coefficient in the temperature range of 25 ° C. to 80 ° C. of the sealing film 100 is preferably 100 ppm / K or less.
  • the length of the protruding portion 15 of the covering layer 14 protruding beyond the end portion of the electromagnetic wave shielding layer 13 in the sealing film 100 is not particularly limited, and may be 0.1 cm or more and 5.0 cm or less. Preferably, it is 0.5 cm or more and 2.5 cm or less.
  • the protruding portion 15 can reach the end portion 51 on the lower surface of the substrate 5 while being folded from the upper surface side of the substrate 5 to the lower surface side. It is possible to reliably realize the covering of the end portion 51 by the protruding portion 15.
  • the insulating layer 12 is placed on the electronic component mounting substrate 45 side so as to cover the substrate 5 and the electronic component 4 and the escape portion 27 corresponds to the connecting member 7.
  • the sealing film 100 is disposed on the electronic component mounting substrate 45, and the stacked projecting portion 65 is brought into contact with the end portion 51 on the lower surface of the substrate 5 by folding the laminated projecting portion 65 toward the lower surface (the other surface) of the substrate 5.
  • Steps heating / depressurizing step of heating and softening the sealing film 100, and cooling and pressurizing the sealing film 100 so that the laminated protrusion 65 is an end portion on the lower surface of the substrate 5
  • the laminated protrusion 65 protruding beyond the end of the electromagnetic wave shielding layer 13 is folded to the lower surface side of the substrate 5, thereby bringing the laminated protrusion 65 into contact with the end 51 (FIG. 30B). )).
  • the sealing film 100 that is, the insulating layer 12, the electromagnetic wave shielding layer 13, and the coating layer 14 are softened.
  • the sealing film 100 that is, the insulating layer 12, the electromagnetic wave shielding layer 13, and the coating layer 14 are softened.
  • the sealing film 100 on the upper surface side of the substrate 5, It will be in the state which can follow the shape of the unevenness
  • the electronic component mounting substrate 45 and the sealing film 100 are arranged in a reduced-pressure atmosphere, so that not only the outside of the sealing film 100 but also the electronic component mounting substrate 45 and the sealing film 100 The gas (air) in between is degassed.
  • the sealing film 100 extends, the shape of the unevenness 6 on the upper surface side of the substrate 5, that is, the shape of the electronic component 4 on the substrate 5 is slightly followed, and on the lower surface side of the substrate 5, The end 51 is slightly covered.
  • the sealing film 100 can be made to follow the shape of the unevenness 6 formed on the upper surface side of the electronic component mounting substrate 45, and the protrusion 15 is folded to the lower surface side of the substrate 5, The end portion 51 can be covered.
  • the space between the electronic component mounting substrate 45 and the sealing film 100 is degassed, and the decompressed state is maintained.
  • the sealing film 100 is further extended.
  • connection member 7 is not exposed and sealed from the escape portion 27, and has excellent adhesion (air density) with respect to the shape of the unevenness 6 (the shape of the electronic component 4). Further, the substrate 5 and the electronic component 4 are covered with the softened sealing film 100 in a state where it is covered with an excellent degree of adhesion to the end portion 51.
  • the elongation at the softening point of the sealing film 100 is 150% or more and 3500% or less.
  • the film 100 for sealing can be extended with the more excellent shape followable
  • the film 100 can cover the substrate 5 and the electronic component 4 on the upper side of the substrate 5 and the end portion 51 with excellent adhesion.
  • the laminated protrusion 65 is folded from the upper surface side to the lower surface side of the substrate 5 to be brought into contact with the end portion 51, it is possible to accurately suppress or prevent the laminated protrusion 65 from being broken at the bent portion. Can be prevented.
  • the sealing film 100 covers the substrate 5 and the electronic component 4, and further covers the end portion 51 with excellent adhesion (airtightness), and the connection member 7 is exposed from the escape portion 27.
  • the sealing film 100 is solidified while maintaining this state.
  • the insulating layer 12 is brought into contact with the sealing film 100 on the upper surface side of the substrate 5 in a state following the shape of the unevenness 6 formed on the electronic component mounting substrate 45, and the substrate 5 and the electronic component 4. And the connecting member 7 is exposed from the escape portion 27, and further, the sealing film-covered electronic component mounting substrate in which the end portion 51 is covered by the folded projecting portion 65 on the lower surface side of the substrate 5. 50 will be obtained. Therefore, in the sealing film-covered electronic component mounting substrate 50, it is possible to more accurately suppress or prevent the external component such as moisture and dust from contacting the electronic component 4 and the electrode 3. Therefore, the reliability of the obtained electronic device including the sealing film-covered electronic component mounting substrate 50 and thus the sealing film-covered electronic component mounting substrate 50 can be improved.
  • the sealing film-covered electronic component mounting substrate 50 in which the substrate 5 and the electronic component 4 are covered with the sealing film 100 and the connection member 7 is exposed from the escape portion 27 is obtained. be able to.
  • FIG. 31 shows a fifteenth embodiment of a sealing film of the present invention ((a) longitudinal sectional view, (b) plan view), and FIGS. 32 (a) to (c) show the sealing shown in FIG. It is a longitudinal cross-sectional view for demonstrating the sealing method of an electronic component mounting board
  • the upper side in FIGS. 31 and 32 is referred to as “upper” and the lower side is referred to as “lower”.
  • the formation of the coating layer 14 is omitted, and the rest is the same as in the twelfth embodiment.
  • the formation of the covering layer 14 is omitted, and the insulating layer 12 and one surface side (upper surface side) of the insulating layer 12 are omitted. It is comprised with the laminated body provided with the electromagnetic wave shielding layer 13 laminated
  • the connecting member 7 is not exposed and sealed from the escape portion 27, and the electronic component 4 is sealed with the electromagnetic wave shielding layer 13 through the insulating layer 12.
  • the elongation at the softening point is 150% or more and 3500% or less.
  • the linear expansion coefficient in the temperature range of 25 ° C. to 80 ° C. of the sealing film 100 is preferably 100 ppm / K or less.
  • the electronic component mounting board 45 can be sealed with excellent followability with respect to the concave and convex portions 6 including the convex portions 61 and the concave portions 62. In this state, the electronic component 4 can be covered.
  • the insulating layer 12 is placed on the electronic component mounting substrate 45 side so as to cover the substrate 5 and the electronic component 4 and the escape portion 27 corresponds to the connecting member 7. While placing the sealing film 100 on the electronic component mounting substrate 45, heating and softening the sealing film 100, heating and decompressing the pressure, and cooling the sealing film 100, It has the cooling and pressurization process which seals the board
  • the sealing film 100 that is, the insulating layer 12 and the electromagnetic wave shielding layer 13 are softened.
  • the electronic component 4 is attached to the substrate 5 on the upper surface side of the substrate 5. It will be in the state which can follow the shape of the unevenness
  • the electronic component mounting substrate 45 and the sealing film 100 are arranged in a reduced-pressure atmosphere, so that not only the outside of the sealing film 100 but also the electronic component mounting substrate 45 and the sealing film 100 The gas (air) in between is degassed.
  • the shape of the unevenness 6, that is, the shape of the electronic component 4 on the substrate 5 is slightly followed on the upper side of the substrate 5.
  • the sealing film 100 can be made to follow the shape of the irregularities 6 formed on the upper surface side of the electronic component mounting substrate 45.
  • the heating of the sealing film 100 and the reduced pressure of the atmosphere may be reduced after the heating or may be heated after the reduced pressure, but it is preferable to perform the heating and the reduced pressure almost simultaneously. Thereby, the softened film 100 for sealing can be made into the state which followed the shape of the unevenness
  • the space between the electronic component mounting substrate 45 and the sealing film 100 is degassed, and the decompressed state is maintained.
  • the sealing film 100 is further extended.
  • the connection member 7 is not exposed and sealed from the escape portion 27, and follows the shape of the unevenness 6 (the shape of the electronic component 4) with excellent adhesion (air density).
  • the substrate 5 and the electronic component 4 are covered with the sealing film 100 in a softened state.
  • the pressing step can be omitted if the sealing film 100 sufficiently follows the shape of the irregularities 6.
  • the elongation at the softening point of the sealing film 100 is preferably 150% or more and 3500% or less.
  • the sealing film 100 is covered with the sealing film 100 with excellent adhesion (airtightness) and the connecting member 7 is exposed from the escape portion 27. By cooling, the sealing film 100 is solidified while maintaining this state.
  • the insulating layer 12 contacts the upper side of the substrate 5 and the substrate 5 and the electronic component 4 are covered by the sealing film 100 in a state of following the shape of the unevenness 6 formed on the electronic component mounting substrate 45.
  • the sealing film-covered electronic component mounting substrate 50 in which the connection member 7 is exposed from the escape portion 27 is obtained. Therefore, in the sealing film-covered electronic component mounting substrate 50, it is possible to accurately suppress or prevent the electronic component 4 from coming into contact with external factors such as moisture and dust. Accordingly, the reliability of the obtained electronic device including the sealing film-covered electronic component mounting substrate 50 and thus the sealing film-covered electronic component mounting substrate 50 can be improved.
  • the sealing film 100 used for covering the electronic component mounting substrate 45 as described above is composed of a laminate of the insulating layer 12 and the electromagnetic wave shielding layer 13.
  • the electronic component 4 is covered with the electromagnetic wave shielding layer 13 through the insulating layer 12. Therefore, the obtained film-covered electronic component mounting substrate 50 for sealing can be one in which the influence of noise due to electromagnetic waves on the electronic component 4 is appropriately suppressed or prevented.
  • the electromagnetic wave shielding layer 13 covers the electronic component 4 in a state in which insulation against the electronic component 4 is secured. be able to.
  • cooling of the film 100 for sealing and pressurization of an atmosphere may be cooled after pressurization, it is preferable to perform cooling and pressurization substantially simultaneously.
  • the film 100 for sealing can be coat
  • the sealing film-covered electronic component mounting substrate 50 in which the substrate 5 and the electronic component 4 are covered with the sealing film 100 and the connection member 7 is exposed from the escape portion 27 is obtained. be able to.
  • FIG. 33 is a view showing a sixteenth embodiment of the sealing film of the present invention ((a) longitudinal sectional view, (b) plan view), and FIGS. 34 (a) to (c) are the seals shown in FIG. It is a longitudinal cross-sectional view for demonstrating the sealing method of an electronic component mounting board
  • the upper side in FIGS. 33 and 34 is referred to as “upper” and the lower side is referred to as “lower”.
  • the sixteenth embodiment is the same as the twelfth embodiment except that the configuration of the insulating layer 12 included in the sealing film 100 is different and the formation of the coating layer 14 is omitted.
  • the insulating layer 12 is formed to be larger than the electromagnetic wave shielding layer 13 as shown in FIGS. 33 and 34, and the end portion thereof is the end portion (edge) of the electromagnetic wave shielding layer 13.
  • a protrusion 16 (third protrusion) formed by protruding beyond the end of the electromagnetic wave shielding layer 13.
  • the connecting member 7 is not exposed and sealed from the escape portion 27, and the electronic component 4 is sealed with the electromagnetic wave shielding layer 13 through the insulating layer 12.
  • the protrusion 16 is configured to be able to be folded to the lower surface (the other surface) side of the substrate 5 when the sealing film 100 is used for coating. Therefore, the end portion 51 on the lower surface of the substrate 5 can be covered with the protruding portion 16. Therefore, the sealing film 100 according to the present embodiment can cover not only the upper surface side of the substrate 5 but also the end portion 51 on the lower surface of the substrate 5 with the protruding portion 16, so that the electronic component has better airtightness.
  • the mounting substrate 45 can be covered. Therefore, in the sealing film-covered electronic component mounting substrate 50 obtained by covering with the sealing film 100, the electronic component 4 on the substrate 5 is more accurately suppressed from coming into contact with external factors such as moisture and dust. Or it can be prevented.
  • the elongation at the softening point is 150% or more and 3500% or less.
  • the linear expansion coefficient in the temperature range of 25 ° C. to 80 ° C. of the sealing film 100 is preferably 100 ppm / K or less.
  • the length of the protruding portion 16 protruding beyond the end portion of the electromagnetic wave shielding layer 13 in the sealing film 100 is not particularly limited, and is preferably 0.1 cm or more and 5.0 cm or less. More preferably, it is 5 cm or more and 2.5 cm or less.
  • the protrusion 16 can reach the end 51 on the lower surface of the substrate 5 while being folded from the upper surface side to the lower surface side of the substrate 5. It is possible to reliably realize the covering of the end portion 51 by the protruding portion 16.
  • the insulating layer 12 is placed on the electronic component mounting substrate 45 side so as to cover the substrate 5 and the electronic component 4 and the escape portion 27 corresponds to the connecting member 7.
  • a cooling / pressurizing step of sealing the substrate 5 and the electronic component 4 with the sealing film 100 in a contact state is provided.
  • the sealing film 100 that is, the insulating layer 12 and the electromagnetic wave shielding layer 13 are softened.
  • the electronic component 4 is attached to the substrate 5 on the upper surface side of the substrate 5. It will be in the state which can follow the shape of the unevenness
  • the electronic component mounting substrate 45 and the sealing film 100 are arranged in a reduced-pressure atmosphere, so that not only the outside of the sealing film 100 but also the electronic component mounting substrate 45 and the sealing film 100 The gas (air) in between is degassed.
  • the sealing film 100 extends, the shape of the unevenness 6 on the upper surface side of the substrate 5, that is, the shape of the electronic component 4 on the substrate 5 is slightly followed, and on the lower surface side of the substrate 5, The end 51 is slightly covered.
  • the sealing film 100 can be made to follow the shape of the unevenness 6 formed on the upper surface side of the electronic component mounting substrate 45, and the protrusion 15 is folded to the lower surface side of the substrate 5, The end portion 51 can be covered.
  • the space between the electronic component mounting substrate 45 and the sealing film 100 is degassed, and the decompressed state is maintained.
  • the sealing film 100 is further extended.
  • connection member 7 is not exposed and sealed from the escape portion 27, and has excellent adhesion (air density) with respect to the shape of the unevenness 6 (the shape of the electronic component 4). Further, the substrate 5 and the electronic component 4 are covered with the softened sealing film 100 in a state where it is covered with an excellent degree of adhesion to the end portion 51.
  • the elongation at the softening point of the sealing film 100 is 150% or more and 3500% or less.
  • the film 100 for sealing can be extended with the more excellent shape followable
  • the film 100 can cover the substrate 5 and the electronic component 4 on the upper side of the substrate 5 and the end portion 51 with excellent adhesion. Further, when the protruding portion 16 is folded from the upper surface side to the lower surface side of the substrate 5 to be brought into contact with the end portion 51, it is possible to accurately suppress or prevent the protruding portion 16 from breaking at the bent portion. be able to.
  • the sealing film 100 covers the substrate 5 and the electronic component 4, and further covers the end portion 51 with excellent adhesion (airtightness), and the connection member 7 is exposed from the escape portion 27.
  • the sealing film 100 is solidified while maintaining this state.
  • the insulating layer 12 is brought into contact with the sealing film 100 on the upper surface side of the substrate 5 in a state following the shape of the unevenness 6 formed on the electronic component mounting substrate 45, and the substrate 5 and the electronic component 4.
  • the connecting member 7 is exposed from the escape portion 27, and further, the sealing film-covered electronic component mounting substrate 50 in which the end portion 51 is covered with the folded protrusion 16 on the lower surface side of the substrate 5.
  • the sealing film-covered electronic component mounting substrate 50 it is possible to more accurately suppress or prevent the electronic component 4 from coming into contact with external factors such as moisture and dust. Therefore, the reliability of the obtained electronic device including the sealing film-covered electronic component mounting substrate 50 and thus the sealing film-covered electronic component mounting substrate 50 can be improved.
  • the sealing film-covered electronic component mounting substrate 50 in which the substrate 5 and the electronic component 4 are covered with the sealing film 100 and the connection member 7 is exposed from the escape portion 27 is obtained. be able to.
  • FIG. 35 is a view showing a seventeenth embodiment of the sealing film of the present invention ((a) longitudinal sectional view, (b) plan view), and FIGS. 36 (a) to (c) are the seals shown in FIG. It is a longitudinal cross-sectional view for demonstrating the sealing method of an electronic component mounting board
  • the upper side in FIGS. 35 and 36 is referred to as “upper” and the lower side is referred to as “lower”.
  • the configurations of the electromagnetic wave shielding layer 13 and the covering layer 14 included in the sealing film 100 are different, and further, the configuration of the electronic component mounting substrate 45 covered with the sealing film 100 is different. Is the same as in the twelfth embodiment.
  • the electromagnetic wave shielding layer 13 and the covering layer 14 are formed larger than the insulating layer 12 as shown in FIGS. Thereby, the edge part of the electromagnetic wave shielding layer 13 located in the insulating layer 12 side among the electromagnetic wave shielding layer 13 and the coating layer 14 is exposed from the edge part (edge part) of the insulating layer 12.
  • the electromagnetic wave shielding layer 13 includes the protruding portion 17 (second protruding portion) formed by protruding beyond the end portion of the insulating layer 12.
  • the electronic component mounting substrate 45 covered with the sealing film 100 of the seventeenth embodiment is mounted on the substrate 5 and the central portion on the upper surface (one surface) side of the substrate 5 as shown in FIG.
  • the electronic component 4 placed and the connection member 7 and the electrode 3 that are electrically connected to the electronic component 4 and formed on the end portion 52 on the upper surface (one surface) side of the substrate 5 are provided.
  • the unevenness 6 including the convex portion 61 and the concave portion 62 is formed on the substrate 5 by mounting the electronic component 4 and the electrode 3 on the upper surface of the substrate 5.
  • an electrode for connecting to a power source for supplying electricity from the outside an electrode for electrically connecting to another electronic component located outside the electronic component mounting board 45,
  • a ground electrode for grounding the electronic component 4 may be used.
  • the insulating layer 12 is on the lower side and the covering layer 14 is on the upper side, and the sealing film 100
  • the electronic component 4 is sealed with the electromagnetic wave shielding layer 13 through the insulating layer 12 without the connection member 7 being exposed and sealed from the escape portion 27.
  • the electromagnetic wave shielding layer 13 is exposed from the insulating layer 12 at the projecting portion 17 included in the covering when the sealing film 100 is used for coating. Therefore, the protruding portion 17 can be brought into contact with the electrode 3 formed on the end portion 52 on the upper surface of the substrate 5. Therefore, since the protrusion 17 is composed of the electromagnetic wave shielding layer 13 and has conductivity, in the obtained film-covered electronic component mounting substrate 50 for sealing, the electrode 3 and the outside through the electromagnetic wave shielding layer 13 are provided. Can be secured.
  • the coating layer 14 is formed on almost the entire upper surface of the electromagnetic wave shielding layer 13, the electrical connection between the electrode 3 and the outside via the electromagnetic wave shielding layer 13 is ensured. Is formed by removing a part of the coating layer 14 to form an exposed portion where the electromagnetic wave shielding layer 13 is exposed, and electrically connecting the electromagnetic wave shielding layer 13 and the outside at the exposed portion. Realized.
  • the length of the protruding portion 17 of the electromagnetic wave shielding layer 13 protruding beyond the end portion of the insulating layer 12 in the sealing film 100 is not particularly limited, and may be 0.1 cm or more and 5.0 cm or less. Preferably, it is 0.5 cm or more and 2.5 cm or less.
  • the protruding portion 17 covers the electrode 3 positioned on the upper surface side of the substrate 5, and the electric connection between the protruding portion 17 and the electrode 3 is established. Can be realized.
  • the insulating layer 12 is placed on the electronic component mounting substrate 45 side so as to cover the substrate 5 and the electronic component 4 and the escape portion 27 corresponds to the connecting member 7.
  • the placement step of bringing the protruding portion 17 into contact with the electrode 3 on the upper surface (one surface) side of the substrate 5, and heating the sealing film 100 The substrate 5, the electronic component 4, and the electrode 3 can be softened and heated while the pressure is reduced, and the sealing film 100 is cooled and pressurized so that the protrusion 17 is in contact with the electrode 3. And a cooling / pressurizing step for sealing with a sealing film 100.
  • the electronic component 4 is covered with the insulating layer 12 located at the center of the sealing film 100, and the electrode 3 is covered with the protruding portion 17 protruding beyond the end of the insulating layer 12 (FIG. 36B). )).
  • the electronic component mounting substrate 45 and the sealing film 100 are arranged in a reduced-pressure atmosphere, so that not only the outside of the sealing film 100 but also the electronic component mounting substrate 45 and the sealing film 100 The gas (air) in between is degassed.
  • the shape of the unevenness 6, that is, the shape of the electronic component 4 and the electrode 3 on the substrate 5 is slightly followed on the upper side of the substrate 5.
  • the sealing film 100 can be made to follow the shape of the irregularities 6 formed on the upper surface side of the electronic component mounting substrate 45.
  • the space between the electronic component mounting substrate 45 and the sealing film 100 is degassed, and the decompressed state is maintained.
  • the sealing film 100 is further extended.
  • connection member 7 is not exposed and sealed from the escape portion 27, and the adhesion (air density) excellent in the shape of the unevenness 6 (the shape of the electronic component 4 and the electrode 3).
  • the substrate 5, the electronic component 4, and the electrode 3 are covered with the sealing film 100 in a softened state following the above.
  • the elongation at the softening point of the sealing film 100 is 150% or more and 3500% or less.
  • the sealing film 100 covers the substrate 5, the electronic component 4, and the electrode 3 with excellent adhesion (airtightness), and the connection member 7 is exposed from the escape portion 27.
  • the sealing film 100 is solidified while maintaining this state.
  • the insulating layer 12 is brought into contact with the upper side of the substrate 5 by the sealing film 100 in a state following the shape of the unevenness 6 formed on the electronic component mounting substrate 45, so that the substrate 5 and the electronic component 4 are
  • the sealing film-covered electronic component mounting substrate 50 that is covered and the connection member 7 is exposed from the escape portion 27 and is further in contact with the electromagnetic wave shield layer 13 to cover the electrode 3 is obtained. Therefore, in this film-covered electronic component mounting substrate 50 for sealing, it is possible to accurately suppress or prevent the external component such as moisture and dust from contacting the electronic component 4 and the electrode 3. Accordingly, the reliability of the obtained electronic device including the sealing film-covered electronic component mounting substrate 50 and thus the sealing film-covered electronic component mounting substrate 50 can be improved.
  • the sealing film 100 used for covering the electronic component mounting substrate 45 as described above is composed of a laminate of the insulating layer 12, the electromagnetic wave shielding layer 13, and the covering layer 14, but the electromagnetic wave shielding layer 13 is At the end portion, a protruding portion 17 formed by protruding beyond the end portion of the insulating layer 12 is provided.
  • the protruding portion 17 directly covers the electrode 3 without the insulating layer 12 interposed therebetween.
  • the substrate 5, the electronic component 4, and the electrode 3 are covered with the sealing film 100 and the connecting member 7 is exposed from the escape portion 27. 50 can be obtained.
  • FIG. 37 is a view showing an eighteenth embodiment of the sealing film of the present invention ((a) longitudinal sectional view, (b) plan view), and FIGS. 38 (a) to (c) are views showing the sealing shown in FIG. It is a longitudinal cross-sectional view for demonstrating the sealing method of an electronic component mounting board
  • the upper side in FIGS. 37 and 38 is referred to as “upper” and the lower side is referred to as “lower”.
  • the configuration of the electromagnetic wave shielding layer 13 included in the sealing film 100 is different, and further, the formation of the coating layer 14 is omitted, and the electronic component mounting to be coated using the sealing film 100 is performed.
  • the substrate 45 is the same as the twelfth embodiment except that the configuration of the substrate 45 is different.
  • the electromagnetic wave shielding layer 13 is formed larger than the insulating layer 12 as shown in FIGS.
  • the end portion of the electromagnetic wave shielding layer 13 is exposed from the end portion (edge portion) of the insulating layer 12, in other words, the protruding portion 17 (formed by protruding beyond the end portion of the insulating layer 12 ( 2nd protrusion part) is provided.
  • the electronic component mounting substrate 45 covered with the sealing film 100 of the eighteenth embodiment is mounted on the substrate 5 and the central portion on the upper surface (one surface) side of the substrate 5 as shown in FIG.
  • the electronic component 4 placed and the connection member 7 and the electrode 3 that are electrically connected to the electronic component 4 and formed on the end portion 52 on the upper surface (one surface) side of the substrate 5 are provided.
  • the unevenness 6 including the convex portion 61 and the concave portion 62 is formed on the substrate 5 by mounting the electronic component 4 and the electrode 3 on the upper surface of the substrate 5.
  • an electrode for connecting to a power source for supplying electricity from the outside an electrode for electrically connecting to another electronic component located outside the electronic component mounting board 45,
  • a ground electrode for grounding the electronic component 4 may be used.
  • the insulating layer 12 is on the lower side
  • the electromagnetic wave shielding layer 13 is on the upper side
  • the sealing film When covering with 100, the electronic component 4 is sealed with the electromagnetic wave shielding layer 13 through the insulating layer 12 without the connecting member 7 being exposed and sealed from the escape portion 27.
  • the electromagnetic wave shielding layer 13 is exposed from the insulating layer 12 at the projecting portion 17 included in the covering when the sealing film 100 is used for coating. Therefore, the protruding portion 17 can be brought into contact with the electrode 3 formed on the end portion 52 on the upper surface of the substrate 5. Therefore, since the protrusion 17 is composed of the electromagnetic wave shielding layer 13 and has conductivity, in the obtained film-covered electronic component mounting substrate 50 for sealing, the electrode 3 and the outside through the electromagnetic wave shielding layer 13 are provided. Can be secured.
  • the length of the protruding portion 17 of the electromagnetic wave shielding layer 13 protruding beyond the end portion of the insulating layer 12 in the sealing film 100 is not particularly limited, and may be 0.1 cm or more and 5.0 cm or less. Preferably, it is 0.5 cm or more and 2.5 cm or less.
  • the projecting portion 17 covers the electrode 3 located on the upper side of the substrate 5 and realizes electrical connection between the projecting portion 17 and the electrode 3. can do.
  • the insulating layer 12 is placed on the electronic component mounting substrate 45 side so as to cover the substrate 5 and the electronic component 4 and the escape portion 27 corresponds to the connecting member 7.
  • the placement step of bringing the protruding portion 17 into contact with the electrode 3 on the upper surface (one surface) side of the substrate 5, and heating the sealing film 100 The substrate 5, the electronic component 4, and the electrode 3 can be softened and heated while the pressure is reduced, and the sealing film 100 is cooled and pressurized so that the protrusion 17 is in contact with the electrode 3. And a cooling / pressurizing step for sealing with a sealing film 100.
  • the electronic component 4 is covered with the insulating layer 12 located at the center of the sealing film 100, and the electrode 3 is covered with the protruding portion 17 protruding beyond the end of the insulating layer 12 (FIG. 38B). )).
  • the sealing film 100 that is, the insulating layer 12 and the electromagnetic wave shielding layer 13 are softened.
  • the electronic component 4 and It will be in the state which can follow the shape of the unevenness
  • the electronic component mounting substrate 45 and the sealing film 100 are arranged in a reduced-pressure atmosphere, so that not only the outside of the sealing film 100 but also the electronic component mounting substrate 45 and the sealing film 100 The gas (air) in between is degassed.
  • the shape of the unevenness 6, that is, the shape of the electronic component 4 and the electrode 3 on the substrate 5 is slightly followed on the upper side of the substrate 5.
  • the sealing film 100 can be made to follow the shape of the irregularities 6 formed on the upper surface side of the electronic component mounting substrate 45.
  • the space between the electronic component mounting substrate 45 and the sealing film 100 is degassed, and the decompressed state is maintained.
  • the sealing film 100 is further extended.
  • connection member 7 is not exposed and sealed from the escape portion 27, and the adhesion (air density) excellent in the shape of the unevenness 6 (the shape of the electronic component 4 and the electrode 3).
  • the substrate 5, the electronic component 4, and the electrode 3 are covered with the sealing film 100 in a softened state following the above.
  • the elongation at the softening point of the sealing film 100 is 150% or more and 3500% or less.
  • the sealing film 100 covers the substrate 5, the electronic component 4, and the electrode 3 with excellent adhesion (airtightness), and the connection member 7 is exposed from the escape portion 27.
  • the sealing film 100 is solidified while maintaining this state.
  • the insulating layer 12 is brought into contact with the upper side of the substrate 5 by the sealing film 100 in a state following the shape of the unevenness 6 formed on the electronic component mounting substrate 45, so that the substrate 5 and the electronic component 4 are
  • the sealing film-covered electronic component mounting substrate 50 that is covered and the connection member 7 is exposed from the escape portion 27 and is further in contact with the electromagnetic wave shield layer 13 to cover the electrode 3 is obtained. Therefore, in this film-covered electronic component mounting substrate 50 for sealing, it is possible to accurately suppress or prevent the external component such as moisture and dust from contacting the electronic component 4 and the electrode 3. Accordingly, the reliability of the obtained electronic device including the sealing film-covered electronic component mounting substrate 50 and thus the sealing film-covered electronic component mounting substrate 50 can be improved.
  • the sealing film 100 used for covering the electronic component mounting substrate 45 as described above is composed of a laminate of the insulating layer 12 and the electromagnetic wave shielding layer 13, and the electromagnetic wave shielding layer 13 is formed at the end thereof. , And a protruding portion 17 formed by protruding beyond the end portion of the insulating layer 12.
  • the protruding portion 17 directly covers the electrode 3 without the insulating layer 12 interposed therebetween.
  • the substrate 5, the electronic component 4, and the electrode 3 are covered with the sealing film 100 and the connecting member 7 is exposed from the escape portion 27. 50 can be obtained.
  • FIG. 39 is a view showing a nineteenth embodiment of the sealing film of the present invention ((a) longitudinal sectional view, (b) plan view), and FIGS. 40 (a) to (c) are the seals shown in FIG. It is a longitudinal cross-sectional view for demonstrating the sealing method of an electronic component mounting board
  • the upper side in FIGS. 39 and 40 is referred to as “upper” and the lower side is referred to as “lower”.
  • the configurations of the electromagnetic wave shielding layer 13 and the covering layer 14 included in the sealing film 100 are different, and further, the configuration of the electronic component mounting substrate 45 covered using the sealing film 100 is different. Is the same as in the twelfth embodiment.
  • the electromagnetic wave shielding layer 13 and the covering layer 14 are formed larger than the insulating layer 12 as shown in FIGS. Thereby, the edge part of the electromagnetic wave shielding layer 13 located in the insulating layer 12 side among the electromagnetic wave shielding layer 13 and the coating layer 14 is exposed from the edge part (edge part) of the insulating layer 12.
  • the electromagnetic wave shielding layer 13 includes the protruding portion 17 (second protruding portion) formed by protruding beyond the end portion of the insulating layer 12.
  • the electronic component mounting substrate 45 covered with the sealing film 100 of the nineteenth embodiment is mounted on the substrate 5 and the central portion on the upper surface (one surface) side of the substrate 5 (see FIG. 40).
  • the mounting of the electronic component 4 on the upper surface of the substrate 5 forms the unevenness 6 including the convex portions 61 and the concave portions 62 on the substrate 5.
  • the insulating layer 12 is on the lower side and the covering layer 14 is on the upper side.
  • the sealing film 100 is used for covering, the electronic component 4 is sealed with the electromagnetic wave shielding layer 13 through the insulating layer 12 without the connecting member 7 being exposed and sealed from the escape portion 27. .
  • the projecting portion 17 provided in the electromagnetic wave shielding layer 13 is configured to be able to be folded to the lower surface side of the substrate 5 when the sealing film 100 is used for coating. Therefore, the protruding portion 17 can be brought into contact with the electrode 3 formed on the end portion 51 on the lower surface of the substrate 5. Therefore, since the protrusion 17 is composed of the electromagnetic wave shielding layer 13 and has conductivity, in the obtained film-covered electronic component mounting substrate 50 for sealing, the electrode 3 and the outside through the electromagnetic wave shielding layer 13 are provided. Can be secured.
  • the coating layer 14 is formed on almost the entire upper surface of the electromagnetic wave shielding layer 13, the electrical connection between the electrode 3 and the outside via the electromagnetic wave shielding layer 13 is ensured. Is formed by removing a part of the coating layer 14 to form an exposed portion where the electromagnetic wave shielding layer 13 is exposed, and electrically connecting the electromagnetic wave shielding layer 13 and the outside at the exposed portion. Realized.
  • the elongation at the softening point is 150% or more and 3500% or less.
  • the linear expansion coefficient in the temperature range of 25 ° C. to 80 ° C. of the sealing film 100 is preferably 100 ppm / K or less.
  • the length of the protruding portion 17 of the electromagnetic wave shielding layer 13 protruding beyond the end portion of the insulating layer 12 in the sealing film 100 is not particularly limited, and may be 0.5 cm or more and 8.0 cm or less. Preferably, it is 1.0 cm or more and 5.0 cm or less.
  • the projecting portion 17 reaches the electrode 3 formed on the end portion 51 on the lower surface of the substrate 5 while folding the projecting portion 17 from the upper surface side to the lower surface side of the substrate 5. Therefore, the electrical connection of the electrode 3 by the protrusion 17 can be reliably realized.
  • the insulating layer 12 is placed on the electronic component mounting substrate 45 side so as to cover the substrate 5 and the electronic component 4 and the escape portion 27 corresponds to the connecting member 7.
  • the protruding portion 17 protruding beyond the end portion of the insulating layer 12 is folded to the lower surface side of the substrate 5, thereby bringing the protruding portion 17 into contact with the electrode 3 (FIG. 40B).
  • the sealing film 100 that is, the insulating layer 12, the electromagnetic wave shielding layer 13, and the coating layer 14 are softened.
  • the shape of the unevenness 6 formed by mounting the electronic component 4 can be followed, and on the lower surface side of the substrate 5, the shape of the electrode 3 provided at the end 51 on the lower surface of the substrate 5. It will be in the state which can track.
  • the electronic component mounting substrate 45 and the sealing film 100 are arranged in a reduced-pressure atmosphere, so that not only the outside of the sealing film 100 but also the electronic component mounting substrate 45 and the sealing film 100 The gas (air) in between is degassed.
  • the sealing film 100 extends, the shape of the unevenness 6 on the upper surface side of the substrate 5, that is, the shape of the electronic component 4 on the substrate 5 is slightly followed, and on the lower surface side of the substrate 5, The state slightly follows the shape of the electrode 3.
  • the sealing film 100 can follow the shape of the irregularities 6 formed on the upper surface side of the electronic component mounting substrate 45 and the shape of the electrodes 3 formed on the lower surface side. be able to.
  • the space between the electronic component mounting substrate 45 and the sealing film 100 is degassed, and the decompressed state is maintained.
  • the sealing film 100 is further extended.
  • connection member 7 is not exposed and sealed from the escape portion 27 on the upper surface side of the substrate 5, and the shape of the unevenness 6 (the shape of the electronic component 4), and the electrode 3 on the lower surface side of the substrate 5.
  • the substrate 5, the electronic component 4, and the electrode 3 are covered with the sealing film 100 in a softened state in a state of following with an excellent adhesion degree (air density).
  • the elongation at the softening point of the sealing film 100 is 150% or more and 3500% or less.
  • the film 100 for sealing can be extended with the more excellent shape followability with respect to the unevenness
  • the sealing film 100 can cover the substrate 5 and the electronic component 4 on the upper surface side of the substrate 5 and the electrode 3 on the lower surface side of the substrate 5 with excellent adhesion. Further, when the protruding portion 17 is folded from the upper surface side to the lower surface side of the substrate 5 to be brought into contact with the electrode 3, it is possible to accurately suppress or prevent the protruding portion 17 from being broken at the bent portion. Can do.
  • the sealing film 100 With the sealing film 100, the substrate 5 and the electronic component 4 are further covered with excellent adhesion (air tightness) with the electrode 3, and the connection member 7 is exposed from the escape portion 27.
  • the sealing film 100 By cooling the sealing film 100, the sealing film 100 is solidified while maintaining this state.
  • the insulating layer 12 is brought into contact with the upper surface side of the substrate 5 by the sealing film 100 in a state following the shape of the unevenness 6 formed on the electronic component mounting substrate 45, so that the substrate 5 and the electronic component 4 are
  • the sealing film-covered electronic component mounting substrate 50 is obtained, which is covered and the connection member 7 is exposed from the escape portion 27 and the electromagnetic wave shielding layer 13 is in contact with the lower surface side of the substrate 5 to cover the electrode 3. Will be. Therefore, in the sealing film-covered electronic component mounting substrate 50, it is possible to more accurately suppress or prevent the external component such as moisture and dust from contacting the electronic component 4 and the electrode 3. Therefore, the reliability of the obtained electronic device including the sealing film-covered electronic component mounting substrate 50 and thus the sealing film-covered electronic component mounting substrate 50 can be improved.
  • the sealing film 100 used for covering the electronic component mounting substrate 45 as described above is composed of a laminate of the insulating layer 12, the electromagnetic wave shielding layer 13, and the covering layer 14, but the electromagnetic wave shielding layer 13 is
  • the insulating layer 12 is formed so as to be larger than the insulating layer 12, and the insulating layer 12 is laminated at the center portion thereof, but at the end portion, the protruding portion 17 formed by protruding beyond the end portion of the insulating layer 12 is provided. Then, the protruding portion 17 is folded on the lower surface side of the substrate 5 to directly cover the electrode 3. Thereby, since the electrode 3 is electrically connected to the protrusion 17 (electromagnetic wave shield layer 13), in the obtained film-covered electronic component mounting substrate 50 for sealing, the electrode 3 and the outside through the protrusion 17 It is possible to ensure electrical connection.
  • the substrate 5, the electronic component 4, and the electrode 3 are covered with the sealing film 100 and the connecting member 7 is exposed from the escape portion 27. 50 can be obtained.
  • FIGS. 41 is a view showing a twentieth embodiment of a sealing film of the present invention ((a) longitudinal sectional view, (b) plan view), and FIGS. 42 (a) to (c) are views showing the sealing shown in FIG. It is a longitudinal cross-sectional view for demonstrating the sealing method of an electronic component mounting board
  • the upper side in FIGS. 41 and 42 is referred to as “upper” and the lower side is referred to as “lower”.
  • the configuration of the electromagnetic wave shielding layer 13 included in the sealing film 100 is different, and further, the formation of the coating layer 14 is omitted, and the electronic component mounting to be coated using the sealing film 100 is performed.
  • the substrate 45 is the same as the twelfth embodiment except that the configuration of the substrate 45 is different.
  • the electromagnetic wave shielding layer 13 is formed larger than the insulating layer 12 as shown in FIGS.
  • the end portion of the electromagnetic wave shielding layer 13 is exposed from the end portion (edge portion) of the insulating layer 12, in other words, the protruding portion 17 (formed by protruding beyond the end portion of the insulating layer 12 ( 2nd protrusion part) is provided.
  • the electronic component mounting substrate 45 covered with the sealing film 100 of the twentieth embodiment is mounted on the substrate 5 and the central portion on the upper surface (one surface) side of the substrate 5, as shown in FIG.
  • the mounting of the electronic component 4 on the upper surface of the substrate 5 forms the unevenness 6 including the convex portions 61 and the concave portions 62 on the substrate 5.
  • the insulating layer 12 is on the lower side and the electromagnetic wave shielding layer 13 is on the upper side. Then, when the sealing film 100 is used for covering, the electronic component 4 is sealed with the electromagnetic wave shielding layer 13 through the insulating layer 12 without the connecting member 7 being exposed and sealed from the escape portion 27.
  • the projecting portion 17 provided in the electromagnetic wave shielding layer 13 is configured to be able to be folded to the lower surface side of the substrate 5 when the sealing film 100 is used for coating. Therefore, the protruding portion 17 can be brought into contact with the electrode 3 formed on the end portion 51 on the lower surface of the substrate 5. Therefore, since the protrusion 17 is composed of the electromagnetic wave shielding layer 13 and has conductivity, in the obtained film-covered electronic component mounting substrate 50 for sealing, the electrode 3 and the outside through the electromagnetic wave shielding layer 13 are provided. Can be secured.
  • the elongation at the softening point is 150% or more and 3500% or less.
  • the linear expansion coefficient in the temperature range of 25 ° C. to 80 ° C. of the sealing film 100 is preferably 100 ppm / K or less.
  • the length of the protruding portion 17 of the electromagnetic wave shielding layer 13 protruding beyond the end portion of the insulating layer 12 in the sealing film 100 is not particularly limited, and may be 0.5 cm or more and 8.0 cm or less. Preferably, it is 1.0 cm or more and 5.0 cm or less.
  • the projecting portion 17 reaches the electrode 3 formed on the end portion 51 on the lower surface of the substrate 5 while folding the projecting portion 17 from the upper surface side to the lower surface side of the substrate 5. Therefore, the electrical connection of the electrode 3 by the protrusion 17 can be reliably realized.
  • the insulating layer 12 is placed on the electronic component mounting substrate 45 side so as to cover the substrate 5 and the electronic component 4 and the escape portion 27 corresponds to the connecting member 7.
  • the sealing film 100 that is, the insulating layer 12 and the electromagnetic wave shielding layer 13 are softened.
  • the electronic component 4 is attached to the substrate 5 on the upper surface side of the substrate 5. It becomes a state that can follow the shape of the irregularities 6 formed by mounting, and on the lower surface side of the substrate 5, with respect to the shape of the electrode 3 provided on the end portion 51 of the lower surface of the substrate 5, It will be in a state where it can follow.
  • the electronic component mounting substrate 45 and the sealing film 100 are arranged in a reduced-pressure atmosphere, so that not only the outside of the sealing film 100 but also the electronic component mounting substrate 45 and the sealing film 100 The gas (air) in between is degassed.
  • the sealing film 100 extends, the shape of the unevenness 6 on the upper surface side of the substrate 5, that is, the shape of the electronic component 4 on the substrate 5 is slightly followed, and on the lower surface side of the substrate 5, The state slightly follows the shape of the electrode 3.
  • the sealing film 100 can follow the shape of the irregularities 6 formed on the upper surface side of the electronic component mounting substrate 45 and the shape of the electrodes 3 formed on the lower surface side. be able to.
  • the space between the electronic component mounting substrate 45 and the sealing film 100 is degassed, and the decompressed state is maintained.
  • the sealing film 100 is further extended.
  • connection member 7 is not exposed and sealed from the escape portion 27 on the upper surface side of the substrate 5, and the shape of the unevenness 6 (the shape of the electronic component 4), and the electrode 3 on the lower surface side of the substrate 5.
  • the substrate 5, the electronic component 4, and the electrode 3 are covered with the sealing film 100 in a softened state in a state of following with an excellent adhesion degree (air density).
  • the elongation at the softening point of the sealing film 100 is 150% or more and 3500% or less.
  • the film 100 for sealing can be extended with the more excellent shape followability with respect to the unevenness
  • the sealing film 100 can cover the substrate 5 and the electronic component 4 on the upper surface side of the substrate 5 and the electrode 3 on the lower surface side of the substrate 5 with excellent adhesion. Further, when the protruding portion 17 is folded from the upper surface side to the lower surface side of the substrate 5 to be brought into contact with the electrode 3, it is possible to accurately suppress or prevent the protruding portion 17 from being broken at the bent portion. Can do.
  • the sealing film 100 With the sealing film 100, the substrate 5 and the electronic component 4 are further covered with excellent adhesion (air tightness) with the electrode 3, and the connection member 7 is exposed from the escape portion 27.
  • the sealing film 100 By cooling the sealing film 100, the sealing film 100 is solidified while maintaining this state.
  • the insulating layer 12 is brought into contact with the upper surface side of the substrate 5 by the sealing film 100 in a state following the shape of the unevenness 6 formed on the electronic component mounting substrate 45, so that the substrate 5 and the electronic component 4 are
  • the sealing film-covered electronic component mounting substrate 50 is obtained, which is covered and the connection member 7 is exposed from the escape portion 27 and the electromagnetic wave shielding layer 13 is in contact with the lower surface side of the substrate 5 to cover the electrode 3. Will be. Therefore, in the sealing film-covered electronic component mounting substrate 50, it is possible to more accurately suppress or prevent the external component such as moisture and dust from contacting the electronic component 4 and the electrode 3. Therefore, the reliability of the obtained electronic device including the sealing film-covered electronic component mounting substrate 50 and thus the sealing film-covered electronic component mounting substrate 50 can be improved.
  • the sealing film 100 used for covering the electronic component mounting substrate 45 as described above is composed of a laminate of the insulating layer 12 and the electromagnetic wave shielding layer 13, and the electromagnetic wave shielding layer 13 is formed from the insulating layer 12.
  • the insulating layer 12 is laminated at the central portion thereof, and the end portion is provided with a protruding portion 17 formed by protruding beyond the end portion of the insulating layer 12. Then, the protruding portion 17 is folded under the substrate 5 to directly cover the electrode 3. Thereby, since the electrode 3 is electrically connected to the protrusion 17 (electromagnetic wave shield layer 13), in the obtained film-covered electronic component mounting substrate 50 for sealing, the electrode 3 and the outside through the protrusion 17 It is possible to ensure electrical connection.
  • the substrate 5, the electronic component 4, and the electrode 3 are covered with the sealing film 100 and the connecting member 7 is exposed from the escape portion 27. 50 can be obtained.
  • FIG. 43 is a longitudinal sectional view showing a twenty-first embodiment of the sealing film of the present invention
  • FIGS. 44 (a) to 44 (c) show the sealing of an electronic component mounting substrate using the sealing film shown in FIG. It is a longitudinal cross-sectional view for demonstrating the stopping method.
  • the upper side in FIGS. 43 and 44 is referred to as “upper” and the lower side is referred to as “lower”.
  • the configurations of the electromagnetic wave shielding layer 13 and the covering layer 14 included in the sealing film 100 are different, and further, the configuration of the electronic component mounting substrate 45 covered with the sealing film 100 is different. Is the same as in the first embodiment.
  • the sealing film 100 includes a laminated body including an insulating layer 12 and an electromagnetic wave shielding layer 13 laminated on one surface side (upper surface side) of the insulating layer 12.
  • the electromagnetic wave shielding layer 13 is laminated on the insulating layer 12 on the opposite side (upper surface side) of the electronic component mounting substrate 45 to be covered.
  • the electromagnetic wave shielding layer 13 is formed to be larger than the insulating layer 12, and its end is exposed from the end (edge) of the insulating layer 12.
  • the electromagnetic wave shielding layer 13 includes the protruding portion 15 formed by protruding beyond the end portion of the insulating layer 12.
  • the electronic component mounting substrate 45 covered with the sealing film 100 is mounted (placed) on the substrate 5 and the central portion on the upper surface (one surface) side of the substrate 5.
  • the electronic component 4 and the electrode 3 electrically connected to the electronic component 4 and formed on the lower surface (the other surface) side of the substrate 5 are provided.
  • the electronic component 4 is mounted on the upper surface of the substrate 5 and the electrode 3 is formed on the lower surface of the substrate 5, so that the upper surface and the lower surface of the substrate 5 are formed with the convex portions 61 and the concave portions 62. Unevenness 6 is formed.
  • the substrate 5 include a printed wiring board.
  • Examples of the electronic component 4 mounted on the substrate 5 include a semiconductor element, a capacitor, a coil, a connector, and a resistor.
  • a semiconductor element for example, an electrode for connecting to a power source for supplying electricity from the outside, an electrode for electrically connecting to another electronic component, a ground electrode for grounding the electronic component 4 and the like can be mentioned.
  • the electronic component mounting substrate 45 having the electronic component 4 mounted on the upper surface side is sealed with the sealing film 100 with the electromagnetic wave shielding layer 13 on the upper side, the electronic component 4 becomes an insulating layer. 12 is sealed with an electromagnetic wave shielding layer 13. Therefore, in the obtained film-covered electronic component mounting substrate 50 for sealing, the influence of noise due to electromagnetic waves on the electronic component 4 is accurately suppressed or prevented.
  • the protrusion 15 provided in the electromagnetic wave shielding layer 13 is configured to be able to be folded on the lower surface side of the substrate 5 when the sealing film 100 is used for coating. Therefore, the protruding portion 15 can be brought into contact with the electrode 3 formed on the end portion on the lower surface side of the substrate 5. Accordingly, since the protruding portion 15 is composed of the electromagnetic wave shielding layer 13 and has conductivity, in the obtained film-covered electronic component mounting substrate 50 for sealing, the electrode 3 and the outside through the electromagnetic wave shielding layer 13 are provided. Can be secured.
  • the elongation at the softening point is 150% or more and 3500% or less, more preferably 150% or more and 2000% or less, and more preferably 1000% or more and 2000% or less. More preferably.
  • the sealing film-covered electronic component mounting substrate 50 obtained by covering the sealing film 100 the electronic component 4 on the substrate 5 is accurately prevented from coming into contact with external factors such as moisture and dust. Or it can be prevented. Accordingly, the reliability of the obtained electronic device including the sealing film-covered electronic component mounting substrate 50 and thus the sealing film-covered electronic component mounting substrate 50 can be improved. Further, when the protruding portion 15 is folded from the upper surface side to the lower surface side of the substrate 5 and brought into contact with the electrode 3, it is possible to accurately suppress or prevent the protruding portion 15 from being broken at the bent portion. it can.
  • the sealing film 100 can be made to follow the shape of the irregularities 6.
  • the average thickness of the sealing film 100 as a whole is preferably 10 ⁇ m or more and 700 ⁇ m or less, and more preferably 20 ⁇ m or more and 400 ⁇ m or less. By setting the average thickness of the sealing film 100 within this range, the sealing film 100 can be accurately suppressed or prevented from breaking in the middle of the sealing film 100, and for sealing. The elongation at the softening point of the film 100 can be reliably set within a range of 150% to 3500%.
  • the length of the protruding portion 15 protruding beyond the end portion of the insulating layer 12 in the sealing film 100 is not particularly limited, and is preferably 0.1 cm or more and 5.0 cm or less, 0.5 cm More preferably, it is 2.5 cm or less.
  • the projecting portion 15 can reach the electrode 3 located on the lower surface side of the substrate 5 while being folded from the upper surface side of the substrate 5 to the lower surface side. The electrical connection between the protrusion 15 and the electrode 3 can be realized.
  • the electronic component mounting substrate sealing method of this embodiment is such that the sealing film 100 is placed on the electronic component mounting substrate 45 with the insulating layer 12 facing the electronic component mounting substrate 45 so as to cover the substrate 5 and the electronic component 4. And placing the protrusion 15 on the lower surface (the other surface) side of the substrate 5 so as to be in contact with the electrode 3 while heating and depressurizing the sealing film 100 while heating and softening it.
  • the process and the cooling film 100 are cooled and pressurized so that the substrate 5 and the electronic component 4 are sealed with the sealing film 100 in a state where the protruding portion 15 is in contact with the electrode 3 by applying pressure. Pressure step.
  • the protruding portion 15 protruding beyond the end portion of the insulating layer 12 is folded to the lower surface side of the substrate 5, thereby bringing the protruding portion 15 into contact with the electrode 3 (FIG. 44B).
  • the sealing film 100 that is, the electromagnetic wave shielding layer 13 and the insulating layer 12 are softened.
  • the electronic component 4 is attached to the substrate 5 on the upper surface side of the substrate 5. It is in a state where it can follow the shape of the unevenness 6 formed by mounting, and further, it can follow the shape of the electrode 3 provided on the substrate 5 on the lower surface side of the substrate 5. .
  • the electronic component mounting substrate 45 and the sealing film 100 are arranged in a reduced-pressure atmosphere, so that not only the outside of the sealing film 100 but also the electronic component mounting substrate 45 and the sealing film 100 The gas (air) in between is degassed.
  • the shape of the irregularities 6 on the upper side of the substrate 5, that is, the shape of the electronic component 4 on the substrate 5 is slightly followed.
  • 5 slightly follows the shape of the electrode 3 on the top.
  • the sealing film 100 can follow the shape of the irregularities 6 formed on the upper surface side of the electronic component mounting substrate 45 and the shape of the electrodes 3 formed on the lower surface side. be able to.
  • the heating of the sealing film 100 and the reduced pressure of the atmosphere may be reduced after the heating or may be heated after the reduced pressure, but it is preferable to perform the heating and the reduced pressure almost simultaneously.
  • the softened film 100 for sealing can be made into the state which followed the shape of the unevenness
  • the space between the electronic component mounting substrate 45 and the sealing film 100 is degassed, and the decompressed state is maintained.
  • the sealing film 100 is further extended.
  • the upper surface of the substrate 5 is softened while following the shape of the unevenness 6 (the shape of the electronic component 4), and the lower side of the substrate 5 with the excellent degree of adhesion (air density) of the shape of the electrode 3.
  • the sealing film 100 covers the substrate 5, the electronic component 4, and the electrode 3.
  • the sealing film 100 sufficiently follows the shape of the irregularities 6, the pressing step can be omitted.
  • the elongation at the softening point of the sealing film 100 is 150% or more and 3500% or less.
  • the film 100 for sealing can be extended with the more excellent shape followability with respect to the unevenness
  • the protruding portion 15 is folded from the upper surface side to the lower surface side of the substrate 5 to be brought into contact with the electrode 3, it is possible to accurately suppress or prevent the protruding portion 15 from breaking at the bent portion. it can.
  • the sealing film 100 is cooled in a state where the sealing film 100 covers the substrate 5 and the electronic component 4, and further the electrode 3 with excellent adhesion (airtightness).
  • the sealing film 100 is solidified while maintaining the above.
  • the substrate 5 and the electronic component 4 are in contact with the insulating layer 12 on the upper side of the substrate 5 by the sealing film 100 while following the shape of the unevenness 6 formed on the electronic component mounting substrate 45.
  • the sealing film-covered electronic component mounting substrate 50 covered with the substrate 5 and the electrode 3 with the electromagnetic wave shielding layer 13 in contact with the lower side of the substrate 5 is obtained. Therefore, in this film-covered electronic component mounting substrate 50 for sealing, it is possible to accurately suppress or prevent the external component such as moisture and dust from contacting the electronic component 4 and the electrode 3. Accordingly, the reliability of the obtained electronic device including the sealing film-covered electronic component mounting substrate 50 and thus the sealing film-covered electronic component mounting substrate 50 can be improved.
  • the sealing film 100 used for covering the electronic component mounting substrate 45 as described above is composed of a laminate of the insulating layer 12 and the electromagnetic wave shielding layer 13.
  • the electromagnetic wave shielding layer 13 is formed from the insulating layer 12.
  • the insulating layer 12 is laminated at the central portion thereof, and the projecting portion 15 formed by projecting beyond the end portion of the insulating layer 12 is provided at the end portion.
  • the electronic component 4 is covered with the insulating layer 12 in the central portion of the electromagnetic wave shielding layer 13. Therefore, it is possible to obtain the sealing film-covered electronic component mounting substrate 50 in which the influence of noise due to electromagnetic waves on the electronic component 4 is accurately suppressed or prevented.
  • the projecting portion 15 having conductivity is directly covered with the electrode 3 by being folded under the substrate 5 without the insulating layer 12 interposed.
  • the electrode 3 is electrically connected to the protrusion 15 (electromagnetic wave shield layer 13), in the obtained film-covered electronic component mounting substrate 50 for sealing, the electrode 3 and the outside through the protrusion 15 It is possible to ensure electrical connection.
  • cooling of the film 100 for sealing and pressurization of an atmosphere may be cooled after pressurization, it is preferable to perform cooling and pressurization substantially simultaneously.
  • the film 100 for sealing can be coat
  • covered with the film 100 for sealing can be obtained.
  • sealing film As described above, the sealing film, the electronic component mounting substrate sealing method, and the sealing film-covered electronic component mounting substrate of the present invention have been described, but the present invention is not limited thereto.
  • sealing film of the present invention an arbitrary layer that can exhibit the same function may be added. Moreover, you may combine each Example of the film for sealing of this invention suitably.
  • Example 1A Manufacture of sealing film>
  • the following resins were prepared as the resins constituting each layer of the sealing film to be formed.
  • an ionomer resin manufactured by Mitsui DuPont Polychemical, “Himiran 1855”, density 0.940 kg / m 3 , MFR 1.3 g / 10 min (measured at 190 ° C.), melting point 97 ° C.) is used as a resin material constituting the insulating layer 12.
  • ionomer resin manufactured by Mitsui DuPont Polychemical, “Himiran 1855”, density 0.940 kg / m 3 , MFR 1.3 g / 10 min (measured at 190 ° C.), melting point 97 ° C.
  • an ionomer resin manufactured by Mitsui DuPont Polychemical, “Himiran 1855”, density 0.940 kg / m 3 , MFR 1.3 g / 10 min (measured at 190 ° C.), melting point 97 ° C.) Prepared.
  • spherical particles made of silver (“Ag-XF301”, 50% particle diameter 4 to 7 ⁇ m, manufactured by Fukuda Metal Foil Powder Industry) were prepared as conductive particles contained in the electromagnetic wave shielding layer 13.
  • the insulating layer 12 is formed by an extrusion method using a resin constituting the insulating layer 12, and 45 parts by weight of the resin material included in the electromagnetic wave shielding layer 13 and 55 parts by weight of the conductive particles are included.
  • the electromagnetic wave shielding layer 13 was applied and formed by a comma coater using the solvent mixture.
  • the insulating film 12 and the electromagnetic wave shielding layer 13 were bonded together by a laminator to form a laminate in which the electromagnetic wave shielding layer 13 / the insulating layer 12 were laminated in this order.
  • the edge part of the insulating layer 12 was removed using the etching method. This obtained the sealing film of Example 1A which consists of a laminated body comprised with the electromagnetic wave shield layer 13 provided with the protrusion part 15 and the insulating layer 12 as shown in FIG.
  • the average thickness ( ⁇ m) of each layer of the obtained sealing film of Example 1A was 100/100 ⁇ m in the electromagnetic wave shielding layer 13 / insulating layer 12, and the total thickness was 200 ⁇ m. .
  • the elongation at the softening point of the sealing film of Example 1A was measured and found to be 880%.
  • the sealing film was heated and softened, and the pressure in the chamber was reduced.
  • the temperature which heated the film for sealing was 125 degreeC
  • the pressure of the chamber was 0.4 kPa
  • Example 1A the film-covered electronic component mounting substrate for sealing of Example 1A in which the substrate and the electronic component were coated with the film for sealing was obtained.
  • Example 2A A sealing film and a sealing film-covered electronic component mounting substrate of Example 2A were obtained in the same manner as in Example 1A, except that the average thickness ( ⁇ m) of the electromagnetic wave shielding layer 13 was 10 ⁇ m.
  • Example 3A A sealing film and a sealing film-covered electronic component mounting substrate of Example 3A were obtained in the same manner as in Example 1A except that the average thickness ( ⁇ m) of the electromagnetic wave shielding layer 13 was 400 ⁇ m.
  • Example 4A The same as Example 1A except that the resin material contained in the electromagnetic wave shielding layer 13 is 20 parts by weight, the conductive particles are 80 parts by weight, and the average thickness ( ⁇ m) of the electromagnetic wave shielding layer 13 is 10 ⁇ m. Thus, a sealing film of Example 4A and a sealing film-coated electronic component mounting substrate were obtained.
  • Example 5A A sealing film and a sealing film-covered electronic component mounting substrate of Example 5A were obtained in the same manner as in Example 4A, except that the average thickness ( ⁇ m) of the electromagnetic wave shielding layer 13 was 400 ⁇ m.
  • Example 6A The sealing film and sealing film of Example 6A were the same as Example 1A except that an adhesive resin (“Admer NF536” manufactured by Mitsui Chemicals) was prepared as the resin material included in the electromagnetic wave shielding layer 13. A coated electronic component mounting substrate was obtained.
  • Admer NF536 manufactured by Mitsui Chemicals
  • Example 7A The sealing film and sealing film covering of Example 7A were the same as Example 1A except that an adhesive resin (“Admer NF536” manufactured by Mitsui Chemicals) was prepared as the resin material constituting the insulating layer 12. An electronic component mounting board was obtained.
  • Admer NF536 manufactured by Mitsui Chemicals
  • Example 8A As the resin material constituting the insulating layer 12, a polyolefin resin ( "Noblen FS2011DG2", density 0.900 g / cm 3, melt index 2.0 g / 10min (230 ° C. Measurement), mp 160 ° C.) was prepared, formed to insulate A sealing film and a sealing film-covered electronic component mounting substrate of Example 8A were obtained in the same manner as in Example 1A, except that the average thickness ( ⁇ m) of the layer 12 was 50 ⁇ m.
  • Comparative Example 1A As Comparative Example 1A, a commercially available biaxially stretched PET film (manufactured by Toyobo Co., Ltd., brand: E5107) was prepared.
  • the sealing film-covered electronic component mounting substrate produced in each Example and Comparative Example was judged based on the following evaluation criteria based on the presence or absence of voids in the coated unevenness. The presence or absence of voids was observed using a microscope.
  • symbol is as follows, A and B were set as the pass, and C was set as the failure.
  • the sealing film-covered electronic component mounting substrate produced in each Example and Comparative Example was judged based on the following evaluation criteria depending on the presence or absence of wrinkles on the coated top surface. The presence or absence of wrinkles was observed using a microscope.
  • symbol is as follows, A was set as the pass and B was set as the failure. A: No wrinkles are observed on the entire top surface of the sealing film. B: Clear wrinkles are observed at positions corresponding to the convex portions on the top surface of the sealing film.
  • Electromagnetic wave shielding properties were evaluated as follows.
  • the value of the electromagnetic wave shielding effect in the frequency range of 0.001 to 1 GHz was measured using the KEC method (electric field), and the frequency was 0.01 GHz or more.
  • the minimum value of the electromagnetic wave shielding effect within the range of 1 GHz or less was obtained.
  • required minimum value was judged based on the following evaluation criteria.
  • symbol is as follows, A was set as the pass and B was set as the failure.
  • the KEC method is a method for evaluating the shielding effect of electromagnetic waves generated in the near field separately for electric and magnetic fields. Measurements using this method are based on electromagnetic waves transmitted from a transmitting antenna (transmission jig). Can be received by a receiving antenna (receiving jig) through a sheet-like sealing film. In such a KEC method, the receiving antenna passes through the sealing film ( The transmitted electromagnetic wave is measured, that is, how much the transmitted electromagnetic wave (signal) is attenuated on the receiving antenna side by the electromagnetic wave shielding layer.
  • the sealing film-covered electronic component mounting substrate produced in each example and comparative example is connected to a power source at the protruding portion provided in the electromagnetic wave shielding layer, and based on the following evaluation criteria depending on whether or not the electronic component is driven. Judged.
  • the elongation at the softening point is 150% or more and 3500% or less, so that the gap at the bottom of the recess, and further the sealing film
  • the generation of wrinkles on the upper surface can be suppressed or prevented, and the electronic component mounting substrate can be coated.
  • the electrical continuity between the external power source and the electrode could be confirmed through the protrusion provided in the electromagnetic wave shielding layer.
  • the elongation at the softening point is less than 150%, and due to this, when covering the electronic component mounting substrate with the sealing film, As a result, voids at the bottom and wrinkles on the top surface of the sealing film were clearly generated.
  • Example 1B Manufacture of sealing film>
  • the following resins were prepared as the resins constituting each layer of the sealing film to be formed.
  • an ionomer resin manufactured by Mitsui DuPont Polychemical, “Himiran 1855”, density 0.940 kg / m 3 , MFR 1.3 g / 10 min (measured at 190 ° C.), melting point 97 ° C.) was prepared.
  • an ionomer resin manufactured by Mitsui DuPont Polychemical, “Himiran 1855”, density 0.940 kg / m 3 , MFR 1.3 g / 10 min (measured at 190 ° C.), melting point 97 ° C.) Prepared.
  • spherical particles made of silver (“Ag-XF301”, 50% particle diameter 4 to 7 ⁇ m, manufactured by Fukuda Metal Foil Powder Industry) were prepared as conductive particles contained in the electromagnetic wave shielding layer 13.
  • the insulating layer 12 was formed by extrusion molding using a resin constituting the insulating layer 12.
  • the electromagnetic wave shielding layer 13 was formed on the insulating layer 12 by a comma coater using a solvent mixture of 45 parts by weight of the resin material and 55 parts by weight of the conductive particles contained in the electromagnetic wave shielding layer 13.
  • the coating layer 14 is formed on the electromagnetic wave shielding layer 13 by a comma coater using a resin constituting the coating layer 14, and the insulating layer 12, the electromagnetic wave shielding layer 13 and the coating layer 14 are bonded together by a laminator.
  • Example 1B which consists of a laminated body comprised with the insulating layer 12, the electromagnetic wave shield layer 13, and the coating layer 14 provided with the protrusion part 17 as shown in FIG.
  • the average thickness ( ⁇ m) of each layer of the sealing film of Example 1B obtained was 50/100/50 ⁇ m for the covering layer 14 / electromagnetic wave shielding layer 13 / insulating layer 12, respectively, and the total thickness Is 200 ⁇ m, and the length of the protruding portion 17 protruding beyond the end portion of the insulating layer 12 was 2.0 cm.
  • the sealing film was heated and softened, and the pressure in the chamber was reduced.
  • the temperature which heated the film for sealing was 125 degreeC
  • the pressure in a chamber was 0.4 kPa
  • the sealing film-covered electronic component mounting substrate of Example 1B in which the substrate and the electronic component are covered with the insulating layer included in the sealing film and the electrode is covered with the electromagnetic wave shielding layer included in the sealing film. Obtained.
  • Example 2B A sealing film and a sealing film-covered electronic component mounting substrate of Example 2B were obtained in the same manner as in Example 1B, except that the average thickness ( ⁇ m) of the electromagnetic wave shielding layer 13 was 10 ⁇ m.
  • Example 3B A sealing film and a sealing film-covered electronic component mounting substrate of Example 3B were obtained in the same manner as in Example 1B except that the average thickness ( ⁇ m) of the electromagnetic wave shielding layer 13 was 400 ⁇ m.
  • Example 4B The same as Example 1B except that the resin material contained in the electromagnetic wave shielding layer 13 is 20 parts by weight, the conductive particles are 80 parts by weight, and the average thickness ( ⁇ m) of the electromagnetic wave shielding layer 13 is 10 ⁇ m. Thus, the sealing film of Example 4B and the sealing film-coated electronic component mounting substrate were obtained.
  • Example 5B A sealing film and a sealing film-covered electronic component mounting substrate of Example 5B were obtained in the same manner as in Example 4B, except that the average thickness ( ⁇ m) of the electromagnetic wave shielding layer 13 was 400 ⁇ m.
  • Example 6B The sealing film and sealing film of Example 6B were the same as Example 1B except that an adhesive resin (“Admer NF536” manufactured by Mitsui Chemicals) was prepared as the resin material included in the electromagnetic wave shielding layer 13. A coated electronic component mounting substrate was obtained.
  • Admer NF536 manufactured by Mitsui Chemicals
  • Example 7B The sealing film and sealing of Example 7B were the same as Example 1B except that an adhesive resin (“Admer NF536” manufactured by Mitsui Chemicals) was prepared as the resin material constituting the insulating layer 12 and the coating layer 14. A film-coated electronic component mounting substrate for stopping was obtained.
  • Admer NF536 manufactured by Mitsui Chemicals
  • Example 8B A polyolefin resin (“Noblen FS2011DG2”, density 0.900 g / cm 3 , melt index 2.0 g / 10 min (measured at 230 ° C.), melting point 160 ° C.) is prepared as a resin material constituting the insulating layer 12 and the coating layer 14.
  • the sealing film and the sealing film-covered electronic component mounting substrate of Example 8B were the same as Example 1B except that the average thickness ( ⁇ m) of the insulating layer 12 and the coating layer 14 to be formed was 25 ⁇ m. Got.
  • Reference Example 1B As Reference Example 1B, a commercially available biaxially stretched PET film (manufactured by Toyobo Co., Ltd., brand: E5107) was prepared.
  • the elongation at the softening point is 150% or more and 3500% or less, so that the gap at the bottom of the recess, and further the sealing film
  • the generation of wrinkles on the upper surface can be suppressed or prevented, and the electronic component mounting substrate can be coated.
  • the electrical continuity between the external power source and the electrode could be confirmed through the protrusion provided in the electromagnetic wave shielding layer.
  • the elongation at the softening point is less than 150%, and due to this, when covering the electronic component mounting substrate with the sealing film, As a result, voids at the bottom and wrinkles on the top surface of the sealing film were clearly generated.
  • Example 1C Manufacture of sealing film>
  • the following resins were prepared as the resins constituting each layer of the sealing film to be formed.
  • an ionomer resin manufactured by Mitsui DuPont Polychemical, “Himiran 1855”, density 0.940 kg / m 3 , MFR 1.3 g / 10 min (measured at 190 ° C.), melting point 97 ° C.) is used as a resin material constituting the insulating layer 12.
  • ionomer resin manufactured by Mitsui DuPont Polychemical, “Himiran 1855”, density 0.940 kg / m 3 , MFR 1.3 g / 10 min (measured at 190 ° C.), melting point 97 ° C.
  • an ionomer resin manufactured by Mitsui DuPont Polychemical, “Himiran 1855”, density 0.940 kg / m 3 , MFR 1.3 g / 10 min (measured at 190 ° C.), melting point 97 ° C.) Prepared.
  • spherical particles made of silver (“Ag-XF301”, 50% particle diameter 4 to 7 ⁇ m, manufactured by Fukuda Metal Foil Powder Industry) were prepared as conductive particles contained in the electromagnetic wave shielding layer 13.
  • the insulating layer 12 was formed by extrusion molding using a resin constituting the insulating layer 12. Thereafter, the electromagnetic wave shielding layer is formed such that the protrusion 16 is formed on the insulating layer 12 by a comma coater using a solvent mixture of 45 parts by weight of the resin material and 55 parts by weight of the conductive particles contained in the electromagnetic wave shielding layer 13. 13 was formed by coating. Thereafter, the insulating layer 12 and the electromagnetic wave shielding layer 13 were bonded together using a laminator. Thus, as shown in FIG. 17, the sealing film of Example 1C, which is composed of a laminated body in which the electromagnetic wave shielding layer 13 / insulating layer 12 are laminated in this order and has the protrusions 16 at the edges, was obtained.
  • the average thickness ( ⁇ m) of each layer of the obtained sealing film of Example 1C is 100/100 ⁇ m respectively in the electromagnetic wave shielding layer 13 / insulating layer 12, and the total thickness is 200 ⁇ m.
  • the length of the protrusion 16 was 2.0 cm.
  • the sealing film was heated and softened, and the pressure in the chamber was reduced.
  • the temperature which heated the film for sealing was 125 degreeC
  • the pressure in a chamber was 0.4 kPa
  • Example 2C A sealing film and a sealing film-covered electronic component mounting substrate of Example 2C were obtained in the same manner as in Example 1C, except that the average thickness ( ⁇ m) of the electromagnetic wave shielding layer 13 was 10 ⁇ m.
  • Example 3C A sealing film and a sealing film-covered electronic component mounting substrate of Example 3C were obtained in the same manner as in Example 1C, except that the average thickness ( ⁇ m) of the electromagnetic wave shielding layer 13 was 400 ⁇ m.
  • Example 4C The same as Example 1C except that the resin material contained in the electromagnetic wave shielding layer 13 is 20 parts by weight, the conductive particles are 80 parts by weight, and the average thickness ( ⁇ m) of the electromagnetic wave shielding layer 13 is 10 ⁇ m. Thus, the sealing film of Example 4C and the sealing film-coated electronic component mounting substrate were obtained.
  • Example 5C A sealing film and a sealing film-covered electronic component mounting substrate of Example 5C were obtained in the same manner as in Example 4C, except that the average thickness ( ⁇ m) of the electromagnetic wave shielding layer 13 was 400 ⁇ m.
  • Example 6C The sealing film and the sealing film of Example 6C were the same as Example 1C except that an adhesive resin (“Admer NF536” manufactured by Mitsui Chemicals) was prepared as the resin material included in the electromagnetic wave shielding layer 13. A coated electronic component mounting substrate was obtained.
  • Admer NF536 manufactured by Mitsui Chemicals
  • Example 7C The sealing film and sealing film covering of Example 7C were the same as Example 1C except that an adhesive resin (“Admer NF536” manufactured by Mitsui Chemicals) was prepared as the resin material constituting the insulating layer 12. An electronic component mounting board was obtained.
  • Admer NF536 manufactured by Mitsui Chemicals
  • Example 8C As a resin material constituting the insulating layer 12, a polyolefin resin (“Noblen FS2011DG2”, density 0.900 g / cm 3 , melt index 2.0 g / 10 min (230 ° C. measurement), melting point 160 ° C.) is prepared and formed. A sealing film and a sealing film-covered electronic component mounting substrate of Example 8C were obtained in the same manner as in Example 1C except that the average thickness ( ⁇ m) of the layer 12 was 50 ⁇ m.
  • Example 9C Except that the sealing film was manufactured as described below, the laminated protrusions in which the substrate and the electronic component were covered with the insulating layer 12 included in the sealing film and folded in the same manner as in Example 1C.
  • the sealing film-covered electronic component mounting substrate of Example 9C in which the lower end 51 of the substrate was covered with 65 was obtained.
  • a polyolefin resin (“Noblen FS2011DG2”, density 0.900 g / cm 3 , melt index 2.0 g / 10 min (230 ° C. measurement), melting point 160 ° C.) is used as a resin material constituting the insulating layer 12 and the coating layer 14. Prepared.
  • an ionomer resin manufactured by Mitsui DuPont Polychemical, “Himiran 1855”, density 0.940 kg / m 3 , MFR 1.3 g / 10 min (measured at 190 ° C.), melting point 97 ° C.) Prepared.
  • spherical particles made of silver (“Ag-XF301”, 50% particle diameter 4 to 7 ⁇ m, manufactured by Fukuda Metal Foil Powder Industry) were prepared as conductive particles contained in the electromagnetic wave shielding layer 13.
  • the insulating layer 12 was formed by extrusion molding using a resin constituting the insulating layer 12. Thereafter, the electromagnetic wave is applied so that the protrusion 16 is formed on the insulating layer 12 by a comma coater using a solvent mixture of 45 parts by weight of the resin material contained in the electromagnetic wave shielding layer 13 and 55 parts by weight of the conductive particles.
  • the shield layer 13 was formed by coating.
  • the coating layer 14 is applied and formed on the electromagnetic wave shielding layer 13 by a comma coater using a resin constituting the coating layer 14 so that the protruding portion 15 is formed, and the insulating layer 12 and the electromagnetic wave shielding layer are formed. 13 and the coating layer 14 were bonded together using a laminator.
  • the sealing film of Example 9C which is composed of a laminated body in which the coating layer 14 / electromagnetic wave shielding layer 13 / insulating layer 12 are laminated in this order, and has the laminated protrusion 65 at the edge portion.
  • the average thickness ( ⁇ m) of each layer of the sealing film of Example 9C obtained was 50/100/50 ⁇ m for the covering layer 14 / electromagnetic wave shielding layer 13 / insulating layer 12, respectively, and the total thickness was 200 ⁇ m, and the length of the laminated protrusion 65 was 2.0 cm.
  • Comparative Example 1C As Comparative Example 1C, a commercially available biaxially stretched PET film (manufactured by Toyobo Co., Ltd., brand: E5107) was prepared.
  • the sealing film-covered electronic component mounting substrate produced in each Example and Comparative Example was judged based on the following evaluation criteria, depending on whether or not there was peeling at the end of the lower surface of the substrate by the laminated protrusions. . In addition, the presence or absence of peeling was observed using a microscope.
  • the elongation at the softening point was 150% or more and 3500% or less, so that the voids at the bottom of the recesses, and further the sealing film The generation of wrinkles on the upper surface can be suppressed or prevented, and the electronic component mounting substrate can be coated. Further, by folding the laminated protrusion, it was possible to cover the end portion of the lower surface of the substrate with the laminated protrusion.
  • the elongation at the softening point is less than 150%, and due to this, when covering the electronic component mounting substrate with the sealing film, As a result, gaps at the bottom, wrinkles on the top surface of the sealing film, and separation between the laminated protrusion and the end of the bottom surface of the substrate were clearly generated.
  • Example 1D Manufacture of sealing film>
  • the following resins were prepared as the resins constituting each layer of the sealing film to be formed.
  • an ionomer resin manufactured by Mitsui DuPont Polychemicals, “Himiran 1855”, density 0.940 kg / m 3 , MFR 1.3 g / 10 min (measured at 190 ° C.), melting point 97 ° C. was prepared.
  • an ionomer resin manufactured by Mitsui DuPont Polychemical, “Himiran 1855”, density 0.940 kg / m 3 , MFR 1.3 g / 10 min (measured at 190 ° C.), melting point 97 ° C.) Prepared.
  • spherical particles made of silver (“Ag-XF301”, 50% particle diameter 4 to 7 ⁇ m, manufactured by Fukuda Metal Foil Powder Industry) were prepared as conductive particles contained in the electromagnetic wave shielding layer 13.
  • the insulating layer 12 was formed by extrusion molding using a resin constituting the insulating layer 12. Thereafter, the electromagnetic wave shielding layer 13 was applied and formed on the insulating layer 12 by a comma coater using a solvent mixture of 45 parts by weight of the resin material contained in the electromagnetic wave shielding layer 13 and 55 parts by weight of the conductive particles.
  • the insulating layer 12 and the electromagnetic wave shielding layer 13 are bonded together by a laminator to form a laminated body in which the insulating layer 12 / the electromagnetic wave shielding layer 13 are laminated in this order, and then the end of the laminated body is cut off. Then, the relief portion 27 was formed, and then the edge portion of the insulating layer 12 was removed using an etching method.
  • the sealing film of Example 1D which is composed of the insulating layer 12 including the protruding portion 17 and the electromagnetic wave shielding layer 13 and is formed of a laminate having the escape portion 27, was obtained.
  • the average thickness ( ⁇ m) of each layer of the obtained sealing film of Example 1D is 100/100 ⁇ m respectively in the electromagnetic wave shielding layer 13 / insulating layer 12, and the total thickness is 200 ⁇ m.
  • the length of the protruding portion 17 protruding beyond the end portion of the insulating layer 12 was 2.0 cm.
  • the sealing film was heated and softened, and the pressure in the chamber was reduced.
  • the temperature which heated the film for sealing was 125 degreeC
  • the pressure of the chamber was 0.4 kPa
  • Example 2D A sealing film and a sealing film-covered electronic component mounting substrate of Example 2D were obtained in the same manner as in Example 1D, except that the average thickness ( ⁇ m) of the electromagnetic wave shielding layer 13 was 10 ⁇ m.
  • Example 3D A sealing film and a sealing film-covered electronic component mounting substrate of Example 3D were obtained in the same manner as in Example 1D except that the average thickness ( ⁇ m) of the electromagnetic wave shielding layer 13 was 400 ⁇ m.
  • Example 4D The same as Example 1D except that the resin material contained in the electromagnetic wave shielding layer 13 is 20 parts by weight, the conductive particles are 80 parts by weight, and the average thickness ( ⁇ m) of the electromagnetic wave shielding layer 13 is 10 ⁇ m. Thus, the sealing film of Example 4D and the sealing film-coated electronic component mounting substrate were obtained.
  • Example 5D A sealing film and a sealing film-covered electronic component mounting substrate of Example 5D were obtained in the same manner as in Example 4D except that the average thickness ( ⁇ m) of the electromagnetic wave shielding layer 13 was 400 ⁇ m.
  • Example 6D The sealing film and sealing film of Example 6D were the same as Example 1D except that an adhesive resin (“Admer NF536” manufactured by Mitsui Chemicals) was prepared as the resin material included in the electromagnetic wave shielding layer 13. A coated electronic component mounting substrate was obtained.
  • Admer NF536 manufactured by Mitsui Chemicals
  • Example 7D The sealing film and sealing film covering of Example 7D were the same as Example 1D except that an adhesive resin (“Admer NF536” manufactured by Mitsui Chemicals) was prepared as the resin material constituting the insulating layer 12. An electronic component mounting board was obtained.
  • Admer NF536 manufactured by Mitsui Chemicals
  • Example 8 As a resin material constituting the insulating layer 12, a polyolefin resin (“Noblen FS2011DG2”, density 0.900 g / cm 3 , melt index 2.0 g / 10 min (230 ° C. measurement), melting point 160 ° C.) is prepared and formed. A sealing film and a sealing film-covered electronic component mounting substrate of Example 8D were obtained in the same manner as in Example 1D except that the average thickness ( ⁇ m) of the layer 12 was 50 ⁇ m.
  • Noblen FS2011DG2 density 0.900 g / cm 3 , melt index 2.0 g / 10 min (230 ° C. measurement), melting point 160 ° C.
  • Example 9D Except that the sealing film was manufactured as follows, the insulating layer provided in the sealing film on the substrate and the electronic component with the connecting member exposed from the escape portion in the same manner as in Example 1D In addition, the sealing film-covered electronic component mounting substrate of Example 9D in which the electrode was covered with the electromagnetic wave shielding layer included in the sealing film was obtained.
  • polyolefin resin (“Noblen FS2011DG2”, density 0.900 g / cm 3 , melt index 2.0 g / 10 min (230 ° C. measurement), melting point 160 ° C.).
  • an ionomer resin manufactured by Mitsui DuPont Polychemical, “Himiran 1855”, density 0.940 kg / m 3 , MFR 1.3 g / 10 min (measured at 190 ° C.), melting point 97 ° C.) Prepared.
  • spherical particles made of silver (“Ag-XF301”, 50% particle diameter 4 to 7 ⁇ m, manufactured by Fukuda Metal Foil Powder Industry) were prepared as conductive particles contained in the electromagnetic wave shielding layer 13.
  • the insulating layer 12 was formed by extrusion molding using a resin constituting the insulating layer 12. Thereafter, the electromagnetic wave shielding layer 13 was applied and formed on the insulating layer 12 by a comma coater using a solvent mixture of 45 parts by weight of the resin material contained in the electromagnetic wave shielding layer 13 and 55 parts by weight of the conductive particles. Further, the coating layer 14 was formed on the electromagnetic wave shielding layer 13 by a comma coater using a resin constituting the coating layer 14.
  • the insulating layer 12, the electromagnetic wave shielding layer 13 and the covering layer 14 are bonded together with a laminator to form a laminated body in which the covering layer 14 / the electromagnetic wave shielding layer 13 / the insulating layer 12 are laminated in this order.
  • the end portion of the insulating layer 12 was cut off to form the escape portion 27, and then the edge portion of the insulating layer 12 was removed using an etching method.
  • the sealing film of Example 9D composed of the insulating layer 12 including the projecting portion 17, the electromagnetic wave shielding layer 13, and the covering layer 14 and including the laminate having the escape portion 27 is formed. Obtained.
  • the average thickness ( ⁇ m) of each layer of the sealing film of Example 9D obtained was 50/100/50 ⁇ m for the insulating layer 12 / electromagnetic wave shield layer 13 / covering layer 14 respectively, and the total thickness. Is 200 ⁇ m, and the length of the protruding portion 17 protruding beyond the end portion of the insulating layer 12 was 2.0 cm.
  • Reference Example 1D As Reference Example 1D, a commercially available biaxially stretched PET film (manufactured by Toyobo Co., Ltd., brand: E5107) was prepared.
  • the elongation at the softening point is 150% or more and 3500% or less, so that the gap at the bottom of the recess, and further the sealing film
  • the generation of wrinkles on the upper surface can be suppressed or prevented, and the electronic component mounting substrate can be coated.
  • the electrical continuity between the external power source and the electrode could be confirmed through the protrusion provided in the electromagnetic wave shielding layer.
  • the elongation at the softening point is less than 150%, and due to this, when covering the electronic component mounting substrate with the sealing film, As a result, voids at the bottom and wrinkles on the top surface of the sealing film were clearly generated.
  • Example 1E Manufacture of sealing film>
  • the following resins were prepared as the resins constituting each layer of the sealing film to be formed.
  • an ionomer resin manufactured by Mitsui DuPont Polychemical, “Himiran 1855”, density 0.940 kg / m 3 , MFR 1.3 g / 10 min (measured at 190 ° C.), melting point 97 ° C.) is used as a resin material constituting the insulating layer 12.
  • ionomer resin manufactured by Mitsui DuPont Polychemical, “Himiran 1855”, density 0.940 kg / m 3 , MFR 1.3 g / 10 min (measured at 190 ° C.), melting point 97 ° C.
  • an ionomer resin manufactured by Mitsui DuPont Polychemical, “Himiran 1855”, density 0.940 kg / m 3 , MFR 1.3 g / 10 min (measured at 190 ° C.), melting point 97 ° C.) Prepared.
  • spherical particles made of silver (“Ag-XF301”, 50% particle diameter 4 to 7 ⁇ m, manufactured by Fukuda Metal Foil Powder Industry) were prepared as conductive particles contained in the electromagnetic wave shielding layer 13.
  • the insulating layer 12 was formed by extrusion molding using a resin constituting the insulating layer 12.
  • the electromagnetic wave shielding layer 13 was formed by coating with a comma coater using a solvent mixture of 45 parts by weight of the resin material contained in the electromagnetic wave shielding layer 13 and 55 parts by weight of the conductive particles.
  • stacked in order of the electromagnetic wave shielding layer 13 / insulating layer 12 was formed by bonding the said insulating layer 12 and the said electromagnetic wave shielding layer 13 with a laminator.
  • the edge part of the insulating layer 12 was removed using the etching method.
  • This obtained the sealing film of Example 1E which consists of a laminated body comprised with the electromagnetic wave shielding layer 13 provided with the protrusion part 15 and the insulating layer 12 as shown in FIG.
  • the average thickness ( ⁇ m) of each layer of the obtained sealing film of Example 1E is 100/100 ⁇ m respectively in the electromagnetic wave shielding layer 13 / insulating layer 12, and the total thickness is 200 ⁇ m.
  • the length of the protruding portion 15 protruding beyond the end portion of the insulating layer 12 was 2.0 cm.
  • the sealing film was heated and softened, and the pressure in the chamber was reduced.
  • the temperature which heated the film for sealing was 125 degreeC
  • the pressure in a chamber was 0.4 kPa
  • the sealing film was cooled and the inside of the chamber was pressurized.
  • substrate and electronic component were coat
  • Example 2E A sealing film and a sealing film-covered electronic component mounting substrate of Example 2E were obtained in the same manner as in Example 1E, except that the average thickness ( ⁇ m) of the electromagnetic wave shielding layer 13 was 10 ⁇ m.
  • Example 3E A sealing film and a sealing film-covered electronic component mounting substrate of Example 3E were obtained in the same manner as in Example 1E except that the average thickness ( ⁇ m) of the electromagnetic wave shielding layer 13 was 400 ⁇ m.
  • Example 4E The same as Example 1E except that the resin material contained in the electromagnetic wave shielding layer 13 is 20 parts by weight, the conductive particles are 80 parts by weight, and the average thickness ( ⁇ m) of the electromagnetic wave shielding layer 13 is 10 ⁇ m. Thus, the sealing film of Example 4E and the sealing film-coated electronic component mounting substrate were obtained.
  • Example 5E A sealing film and a sealing film-covered electronic component mounting substrate of Example 5E were obtained in the same manner as in Example 4E except that the average thickness ( ⁇ m) of the electromagnetic wave shielding layer 13 was 400 ⁇ m.
  • Example 6E The sealing film and sealing film of Example 6E were the same as Example 1E except that an adhesive resin (“Admer NF536” manufactured by Mitsui Chemicals) was prepared as the resin material contained in the electromagnetic wave shielding layer 13. A coated electronic component mounting substrate was obtained.
  • Admer NF536 manufactured by Mitsui Chemicals
  • Example 7E The sealing film and sealing film covering of Example 7E were prepared in the same manner as in Example 1E except that an adhesive resin (“Admer NF536” manufactured by Mitsui Chemicals) was prepared as the resin material constituting the insulating layer 12. An electronic component mounting board was obtained.
  • Admer NF536 manufactured by Mitsui Chemicals
  • Example 8E As a resin material constituting the insulating layer 12, a polyolefin resin (“Noblen FS2011DG2”, density 0.900 g / cm 3 , melt index 2.0 g / 10 min (230 ° C. measurement), melting point 160 ° C.) is prepared and formed. A sealing film and a sealing film-covered electronic component mounting substrate of Example 8E were obtained in the same manner as in Example 1E except that the average thickness ( ⁇ m) of the layer 12 was 50 ⁇ m.
  • Reference Example 1E As Reference Example 1E, a commercially available biaxially stretched PET film (manufactured by Toyobo Co., Ltd., brand: E5107) was prepared.
  • the elongation at the softening point was 150% or more and 3500% or less, so that the gap at the bottom of the recess, and further the sealing film
  • the generation of wrinkles on the upper surface can be suppressed or prevented, and the electronic component mounting substrate can be coated.
  • the electrical continuity between the external power source and the electrode could be confirmed through the protrusion provided in the electromagnetic wave shielding layer.
  • the elongation at the softening point is less than 150%, and due to this, when the electronic component mounting substrate is covered with the sealing film, the bottom of the recess As a result, the voids and wrinkles on the upper surface of the sealing film were clearly generated.
  • the sealing film is composed mainly of a resin material, and the elongation rate of the sealing film at the softening point required in accordance with JIS K 6251 is 150% or more and 3500% or less. .
  • the sealing film is placed on the electronic component mounting substrate so as to cover the substrate and the electronic component. Thereafter, the sealing film is heated and softened, and the pressure is reduced. Thereafter, the sealing film is cooled and pressurized. Through the above steps, the sealing film covers the substrate and the electronic component in a state of sealing with excellent followability with respect to the unevenness formed by mounting the electronic component on the substrate. be able to.
  • the sealing film-covered electronic component mounting substrate obtained by coating this sealing film the electronic component (particularly, the electronic component) is accurately suppressed from coming into contact with external factors such as moisture and dust. Or it can be prevented. Further, when the substrate and the electronic component are covered with the sealing film, the electronic component is sealed with the electromagnetic wave shielding layer through the insulating layer, so that the obtained sealing film-covered electronic component mounting substrate is obtained. In this case, the influence of noise due to electromagnetic waves on the electronic component is appropriately suppressed or prevented. Therefore, the present invention has industrial applicability.

Abstract

A sealing film 100 according to the present invention is used for sealing an electronic component mounted substrate 45 that is provided with a substrate 5 and an electronic component 4 mounted on one surface side of the substrate 5, and is provided with: an insulating layer 12; and an electromagnetic wave shield layer 13. The insulating layer 12 and the electromagnetic wave shield layer 13 contain resin materials, and the elongation rate of the sealing film 100 at a softening point required on the basis of JIS K 6251 is 150-3500%. The electromagnetic wave shield layer 13 can be configured by being provided with a projected part that projects beyond the end of the insulating layer 12.

Description

封止用フィルム、電子部品搭載基板の封止方法および封止用フィルム被覆電子部品搭載基板Film for sealing, sealing method for electronic component mounting substrate, and film-covered electronic component mounting substrate for sealing
 本発明は、封止用フィルム、電子部品搭載基板の封止方法および封止用フィルム被覆電子部品搭載基板に関するものである。 The present invention relates to a sealing film, an electronic component mounting substrate sealing method, and a sealing film-covered electronic component mounting substrate.
 従来、携帯電話、スマートフォン、電卓、電子新聞、タブレット端末、テレビ電話、パーソナルコンピュータのような電子機器には、例えば、半導体素子、コンデンサー、コイルのような電子部品が搭載された電子部品搭載基板が実装されるが、この電子部品搭載基板は、湿気や埃等の外部因子との接触を防止することを目的に、樹脂により封止がなされることがある。 Conventionally, in electronic devices such as mobile phones, smartphones, calculators, electronic newspapers, tablet terminals, videophones, personal computers, for example, electronic component mounting substrates on which electronic components such as semiconductor elements, capacitors, and coils are mounted. Although mounted, the electronic component mounting board may be sealed with resin for the purpose of preventing contact with external factors such as moisture and dust.
 このような樹脂による封止は、例えば、電子部品搭載基板を金属キャビティ内に配置した後に、流動性の高いウレタン樹脂のような熱硬化性樹脂を注入して封止するポッティング法の他、熱可塑性樹脂を溶融状態で電子部品搭載基板に塗布した後に、固化させることで塗布した領域をコーティング(封止)するコーティング法が知られている。 Sealing with such a resin includes, for example, a potting method in which a thermosetting resin such as a highly fluid urethane resin is injected and sealed after an electronic component mounting substrate is placed in a metal cavity. A coating method is known in which a plastic resin is applied to an electronic component mounting substrate in a molten state and then solidified to be coated (sealed).
 しかしながら、ポッティング法では、熱硬化性樹脂の硬化に時間を要し、さらには、通常、封止に金属キャビティを要するため、得られる電子機器の重量化を招くと言う問題があった。また、コーティング法では、溶融状態とする熱可塑性樹脂の粘度管理が必要であり、また、熱可塑性樹脂の塗布領域に対する塗り分けに時間と手間を有するという問題があった。 However, the potting method has a problem in that it takes time to cure the thermosetting resin, and usually requires a metal cavity for sealing, resulting in an increase in the weight of the resulting electronic device. In addition, the coating method requires the viscosity management of the thermoplastic resin in a molten state, and there is a problem that time and labor are required for separately coating the thermoplastic resin coating area.
 かかる問題点を解決することを目的に、ホットメルト性を有するバリアフィルムを電子部品搭載基板に貼付することが提案されている(例えば、特許文献1参照。)。 For the purpose of solving such problems, it has been proposed to attach a barrier film having hot melt properties to an electronic component mounting substrate (see, for example, Patent Document 1).
 ところが、この場合、電子部品搭載基板が電子部品を備えることに起因して形成される凹凸に対する追従性が十分に得られず、その結果、湿気や埃等の外部因子に対するバリア性を十分に向上させるには至っていない。 However, in this case, the followability to the unevenness formed due to the electronic component mounting substrate including the electronic component is not sufficiently obtained, and as a result, the barrier property against external factors such as moisture and dust is sufficiently improved. It has not reached.
 また、湿気や埃等の外部因子に対するバリア性を付与する他に、前記電子部品に対する電磁波によるノイズの影響を軽減するための電磁波シールド性を、バリアフィルム(封止用フィルム)に付与することが求められることがあった。 In addition to providing barrier properties against external factors such as moisture and dust, the barrier film (sealing film) may be provided with electromagnetic wave shielding properties for reducing the influence of noise caused by electromagnetic waves on the electronic component. There was a demand.
特開2009-99417公報JP 2009-99417 A
 本発明の目的は、電子部品搭載基板が備える電子部品の搭載に起因して生じる凹凸に対する優れた追従性、および、電子部品への電磁波によるノイズの影響を軽減するための電磁波シールド性を付与して封止することができる封止用フィルム、かかる封止用フィルムを用いた電子部品搭載基板の封止方法、ならびに、かかる封止用フィルムを備える封止用フィルム被覆電子部品搭載基板を提供することにある。 An object of the present invention is to provide excellent followability to unevenness caused by mounting of an electronic component provided on the electronic component mounting board and electromagnetic wave shielding property to reduce the influence of noise due to electromagnetic waves on the electronic component. A sealing film that can be sealed in a sealed manner, a method for sealing an electronic component mounting substrate using such a sealing film, and a sealing film-covered electronic component mounting substrate provided with such a sealing film are provided. There is.
 このような目的は、下記(1)~(29)に記載の本発明により達成される。
 (1) 基板と、該基板の一方の面側に搭載された電子部品とを備える電子部品搭載基板を封止するのに用いられる封止用フィルムであって、
 絶縁層と、該絶縁層の一方の面側に積層された電磁波シールド層とを有し、
 前記絶縁層および前記電磁波シールド層は、ともに、樹脂材料を含有し、当該封止用フィルムは、JIS K 6251に準拠して求められる軟化点における伸び率が150%以上3500%以下であることを特徴とする封止用フィルム。
Such an object is achieved by the present invention described in the following (1) to (29).
(1) A sealing film used for sealing an electronic component mounting substrate comprising a substrate and an electronic component mounted on one surface side of the substrate,
Having an insulating layer and an electromagnetic wave shielding layer laminated on one side of the insulating layer;
Both the insulating layer and the electromagnetic wave shielding layer contain a resin material, and the sealing film has an elongation at a softening point required in accordance with JIS K 6251 of 150% or more and 3500% or less. A film for sealing.
 (2) 前記電子部品搭載基板は、前記基板の一方の面側に設けられ、前記電子部品に電気的に接続された電極をさらに有し、
 前記電磁波シールド層は、前記絶縁層の端部を越えて突出する突出部を備えている上記(1)に記載の封止用フィルム。
(2) The electronic component mounting substrate further includes an electrode provided on one surface side of the substrate and electrically connected to the electronic component,
The said electromagnetic wave shielding layer is a film for sealing as described in said (1) provided with the protrusion part which protrudes beyond the edge part of the said insulating layer.
 (3) 前記突出部は、前記電極に対応して形成され、前記電子部品搭載基板を封止する際に、前記電極に接触する上記(2)に記載の封止用フィルム。 (3) The sealing film according to (2), wherein the protruding portion is formed corresponding to the electrode, and contacts the electrode when the electronic component mounting substrate is sealed.
 (4) 前記電極は、前記基板の縁部、もしくは電子部品の周囲に設けられている上記(2)または(3)に記載の封止用フィルム。 (4) The sealing film according to (2) or (3), wherein the electrode is provided at an edge of the substrate or around an electronic component.
 (5) 前記電極は、グランド電極である上記(2)ないし(4)のいずれかに記載の封止用フィルム。 (5) The sealing film according to any one of (2) to (4), wherein the electrode is a ground electrode.
 (6) 当該封止用フィルムは、前記電磁波シールド層の前記絶縁層と反対側に積層された被覆層をさらに備え、
 前記絶縁層を前記基板の一方の面側にして、前記電子部品搭載基板を封止するように構成されている上記(1)に記載の封止用フィルム。
(6) The sealing film further includes a coating layer laminated on the opposite side of the electromagnetic shielding layer from the insulating layer,
The sealing film according to (1), wherein the electronic component mounting substrate is sealed with the insulating layer on one surface side of the substrate.
 (7) 前記被覆層は、前記電磁波シールド層の端部を越えて突出する第1突出部を備え、前記基板の一方の面側から前記電子部品搭載基板を封止する際に、前記第1突出部は、前記基板の他方の面側に折り込まれることにより、前記基板の他方の面側を被覆するよう構成されている上記(6)に記載の封止用フィルム。 (7) The coating layer includes a first protruding portion that protrudes beyond an end portion of the electromagnetic wave shielding layer, and the first electronic component mounting substrate is sealed when the electronic component mounting substrate is sealed from one surface side of the substrate. The projecting portion is the sealing film according to (6), which is configured to cover the other surface side of the substrate by being folded on the other surface side of the substrate.
 (8) 前記電子部品搭載基板は、前記基板の一方の面側に設けられ、前記電子部品に電気的に接続された電極をさらに備え、
 前記電磁波シールド層は、前記絶縁層の端部を越えて突出する第2突出部を備え、前記基板の一方の面側から前記電子部品搭載基板を封止する際に、前記第2突出部は、前記基板の一方の面側で前記電極に接触するよう構成されている上記(6)または(7)に記載の封止用フィルム。
(8) The electronic component mounting substrate further includes an electrode provided on one surface side of the substrate and electrically connected to the electronic component,
The electromagnetic wave shielding layer includes a second protruding portion that protrudes beyond an end portion of the insulating layer, and when the electronic component mounting substrate is sealed from one surface side of the substrate, the second protruding portion is The sealing film according to (6) or (7), wherein the sealing film is configured to contact the electrode on one surface side of the substrate.
 (9) 前記電子部品搭載基板は、前記基板の他方の面側に設けられ、前記電子部品に電気的に接続された電極をさらに備え、
 前記電磁波シールド層は、前記絶縁層の端部を越えて突出する第2突出部を備え、前記基板の一方の面側から前記電子部品搭載基板を封止する際に、前記第2突出部は、前記基板の他方の面側に折り込まれることにより、前記基板の他方の面側で前記電極に接触するよう構成されている上記(6)または(7)に記載の封止用フィルム。
(9) The electronic component mounting substrate further includes an electrode provided on the other surface side of the substrate and electrically connected to the electronic component,
The electromagnetic wave shielding layer includes a second protruding portion that protrudes beyond an end portion of the insulating layer, and when the electronic component mounting substrate is sealed from one surface side of the substrate, the second protruding portion is The sealing film according to (6) or (7), wherein the film is configured to be in contact with the electrode on the other surface side of the substrate by being folded on the other surface side of the substrate.
 (10) 前記絶縁層は、前記電磁波シールド層の端部を越えて突出し、前記第1突出部に接触して積層された第3突出部を備え、前記基板の一方の面側から前記電子部品搭載基板を封止する際に、前記第1突出部と前記第3突出部とは、前記基板の他方の面側に折り込まれることにより、前記基板の他方の面側を前記第3突出部が接触して被覆するよう構成されている上記(7)に記載の封止用フィルム。 (10) The insulating layer includes a third protruding portion that protrudes beyond the end portion of the electromagnetic wave shielding layer and is stacked in contact with the first protruding portion, and the electronic component is provided from one surface side of the substrate. When the mounting substrate is sealed, the first projecting portion and the third projecting portion are folded to the other surface side of the substrate so that the third projecting portion is placed on the other surface side of the substrate. The sealing film according to (7), wherein the sealing film is configured to contact and cover.
 (11) 前記電子部品搭載基板は、前記基板の一方の面側に設けられ、前記電子部品に電気的に接続された電極をさらに備え、
 前記電磁波シールド層は、前記被覆層の端部を越えて突出する第4突出部を備え、前記基板の一方の面側から前記電子部品搭載基板を封止する際に、前記第4突出部は、前記基板の一方の面側に折り込まれることにより、前記基板の一方の面側で前記電極に接触するよう構成されている上記(6)に記載の封止用フィルム。
(11) The electronic component mounting substrate further includes an electrode provided on one surface side of the substrate and electrically connected to the electronic component,
The electromagnetic wave shielding layer includes a fourth projecting portion projecting beyond the end portion of the coating layer, and when sealing the electronic component mounting substrate from one surface side of the substrate, the fourth projecting portion is The sealing film according to (6), wherein the sealing film is configured to be in contact with the electrode on one surface side of the substrate by being folded on one surface side of the substrate.
 (12) 前記絶縁層は、前記電磁波シールド層の端部を越えて突出する突出部を備えている上記(1)に記載の封止用フィルム。 (12) The sealing film according to (1), wherein the insulating layer includes a protruding portion that protrudes beyond an end portion of the electromagnetic wave shielding layer.
 (13) 前記電磁波シールド層は、前記電子部品に対応する位置に選択的に形成されている上記(12)に記載の封止用フィルム。 (13) The sealing film according to (12), wherein the electromagnetic wave shielding layer is selectively formed at a position corresponding to the electronic component.
 (14) 前記突出部は、前記基板の一方の面側から前記電子部品搭載基板を封止する際に、前記基板の他方の面側に折り込まれることにより、前記基板の他方の面側を被覆するよう構成されている上記(12)または(13)に記載の封止用フィルム。 (14) The protruding portion covers the other surface side of the substrate by being folded into the other surface side of the substrate when the electronic component mounting substrate is sealed from the one surface side of the substrate. The film for sealing according to the above (12) or (13), which is configured to perform.
 (15) 前記電子部品搭載基板は、開放端面を有し、前記電子部品に電気的に接続された接続部材をさらに有し、
 当該封止用フィルムは、前記電子部品搭載基板を封止する際に、前記接続部材に対応する位置に逃げ部を有する上記(1)に記載の封止用フィルム。
(15) The electronic component mounting substrate further includes a connection member having an open end surface and electrically connected to the electronic component,
The sealing film according to (1), wherein the sealing film has an escape portion at a position corresponding to the connection member when sealing the electronic component mounting substrate.
 (16) 前記絶縁層および前記電磁波シールド層を構成する前記樹脂材料は、熱可塑性樹脂である上記(15)に記載の封止用フィルム。 (16) The sealing film according to (15), wherein the resin material constituting the insulating layer and the electromagnetic wave shielding layer is a thermoplastic resin.
 (17) 前記電子部品搭載基板は、前記基板の他方の面側に設けられ、前記電子部品に電気的に接続された電極をさらに備え、
 前記電磁波シールド層は、前記絶縁層の端部を越えて突出する突出部を備え、前記基板の一方の面側から前記電子部品搭載基板を封止する際に、前記突出部は、前記基板の他方の面側に折り込まれることにより前記電極に接触するよう構成されている上記(1)に記載の封止用フィルム。
(17) The electronic component mounting substrate further includes an electrode provided on the other surface side of the substrate and electrically connected to the electronic component,
The electromagnetic wave shielding layer includes a protruding portion that protrudes beyond the end portion of the insulating layer, and when the electronic component mounting substrate is sealed from one surface side of the substrate, the protruding portion is formed on the substrate. The sealing film according to (1), which is configured to be in contact with the electrode by being folded on the other surface side.
 (18) 前記電極は、前記基板の縁部に設けられている上記(17)に記載の封止用フィルム。 (18) The sealing film according to (17), wherein the electrode is provided on an edge of the substrate.
 (19) 前記電極は、グランド電極である上記(17)または(18)に記載の封止用フィルム。 (19) The sealing film according to (17) or (18), wherein the electrode is a ground electrode.
 (20) 当該封止用フィルムは、25℃以上80℃以下の温度範囲での線膨張率が100ppm/K以下である上記(1)ないし(19)のいずれかに記載の封止用フィルム。 (20) The sealing film according to any one of (1) to (19), wherein the sealing film has a linear expansion coefficient of 100 ppm / K or less in a temperature range of 25 ° C. or more and 80 ° C. or less.
 (21) 前記絶縁層および前記電磁波シールド層のうち少なくとも一方は、前記樹脂材料として、ポリオレフィン系樹脂を含有する上記(1)ないし(20)のいずれかに記載の封止用フィルム。 (21) The sealing film according to any one of (1) to (20), wherein at least one of the insulating layer and the electromagnetic wave shielding layer contains a polyolefin resin as the resin material.
 (22) 当該封止用フィルムは、その平均厚さが10μm以上700μm以下である上記(1)ないし(21)のいずれかに記載の封止用フィルム。 (22) The sealing film according to any one of (1) to (21), wherein the sealing film has an average thickness of 10 μm to 700 μm.
 (23) 前記基板は、プリント配線基板である上記(1)ないし(22)のいずれかに記載の封止用フィルム。 (23) The sealing film according to any one of (1) to (22), wherein the substrate is a printed wiring board.
 (24) 上記(2)ないし(5)のいずれかに記載の封止用フィルムを用いて、前記基板と前記電子部品と前記電極を封止する電子部品搭載基板の封止方法であって、
 前記基板と前記電子部品と前記電極を覆うように、前記絶縁層を前記電子部品搭載基板側にして前記封止用フィルムを前記電子部品搭載基板上に配置する工程と、
 前記封止用フィルムを加熱し軟化させるとともに、減圧する工程と、
 前記封止用フィルムを冷却させるとともに、加圧することで、前記突出部が前記電極に接触した状態で、前記基板と前記電子部品と前記電極とを前記封止用フィルムで封止する工程とを有することを特徴とする電子部品搭載基板の封止方法。
(24) A sealing method of an electronic component mounting substrate for sealing the substrate, the electronic component, and the electrode using the sealing film according to any one of (2) to (5),
Placing the sealing film on the electronic component mounting substrate with the insulating layer facing the electronic component mounting substrate so as to cover the substrate, the electronic component, and the electrode;
Heating and softening the sealing film, and depressurizing;
The step of sealing the substrate, the electronic component, and the electrode with the sealing film in a state where the protruding portion is in contact with the electrode by cooling and pressurizing the sealing film. A method for sealing an electronic component mounting substrate, comprising:
 (25) 上記(6)ないし(11)のいずれかに記載の封止用フィルムを用いて、前記基板と前記電子部品とを封止する電子部品搭載基板の封止方法であって、
 前記基板と前記電子部品とを覆うように、前記絶縁層を前記電子部品搭載基板側にして前記封止用フィルムを前記電子部品搭載基板上に配置する工程と、
 前記封止用フィルムを加熱し軟化させるとともに、減圧する工程と、
 前記封止用フィルムを冷却させるとともに、加圧することで、前記基板と前記電子部品とを前記封止用フィルムで封止する工程とを有することを特徴とする電子部品搭載基板の封止方法。
(25) A sealing method for an electronic component mounting substrate for sealing the substrate and the electronic component using the sealing film according to any one of (6) to (11),
Disposing the sealing film on the electronic component mounting substrate with the insulating layer facing the electronic component mounting substrate so as to cover the substrate and the electronic component;
Heating and softening the sealing film, and depressurizing;
A method for sealing an electronic component mounting substrate, comprising: cooling the sealing film and applying pressure to seal the substrate and the electronic component with the sealing film.
 (26) 上記(12)ないし(14)のいずれかに記載の封止用フィルムを用いて、前記基板と前記電子部品とを封止する電子部品搭載基板の封止方法であって、
 前記基板と前記電子部品とを覆うように、前記絶縁層を前記電子部品搭載基板側にして前記封止用フィルムを前記電子部品搭載基板上に配置する工程と、
 前記封止用フィルムを加熱し軟化させるとともに、減圧する工程と、
 前記封止用フィルムを冷却させるとともに、加圧することで、前記絶縁層を介して前記電磁波シールド層により前記電子部品を被覆した状態で、前記基板と前記電子部品とを前記封止用フィルムで封止する工程とを有することを特徴とする電子部品搭載基板の封止方法。
(26) A sealing method for an electronic component mounting substrate for sealing the substrate and the electronic component using the sealing film according to any one of (12) to (14),
Disposing the sealing film on the electronic component mounting substrate with the insulating layer facing the electronic component mounting substrate so as to cover the substrate and the electronic component;
Heating and softening the sealing film, and depressurizing;
By cooling and pressurizing the sealing film, the substrate and the electronic component are sealed with the sealing film while the electronic component is covered with the electromagnetic wave shielding layer through the insulating layer. And a step of stopping the electronic component mounting substrate.
 (27) 上記(15)または(16)に記載の封止用フィルムを用いて、前記基板と前記電子部品とを封止する電子部品搭載基板の封止方法であって、
 前記基板と前記電子部品とを覆い、かつ、前記接続部材に前記逃げ部が対応するように前記封止用フィルムを前記電子部品搭載基板上に配置する工程と、
 前記封止用フィルムを加熱し軟化させるとともに、減圧する工程と、
 前記封止用フィルムを冷却させるとともに、加圧することで、前記接続部材が封止されることなく、前記基板と前記電子部品とを前記封止用フィルムで封止する工程とを有することを特徴とする電子部品搭載基板の封止方法。
(27) A sealing method for an electronic component mounting substrate for sealing the substrate and the electronic component using the sealing film according to (15) or (16),
A step of covering the substrate and the electronic component and disposing the sealing film on the electronic component mounting substrate so that the escape portion corresponds to the connection member;
Heating and softening the sealing film, and depressurizing;
A step of sealing the substrate and the electronic component with the sealing film without sealing the connecting member by cooling and pressurizing the sealing film. An electronic component mounting substrate sealing method.
 (28) 上記(17)ないし(19)のいずれかに記載の封止用フィルムを用いて、前記基板と前記電子部品と前記電極とを封止する電子部品搭載基板の封止方法であって、
 前記基板と前記電子部品とを覆うように、前記絶縁層を前記電子部品搭載基板側にして前記封止用フィルムを前記電子部品搭載基板上に配置しつつ、前記突出部を、前記基板の他方の面側に折り込むことにより前記電極に接触させる工程と、
 前記封止用フィルムを加熱し軟化させるとともに、減圧する工程と、
 前記封止用フィルムを冷却させるとともに、加圧することで、前記突出部が前記電極に接触した状態で、前記基板と前記電子部品と前記電極とを前記封止用フィルムで封止する工程とを有することを特徴とする電子部品搭載基板の封止方法。
(28) A method for sealing an electronic component mounting substrate, wherein the substrate, the electronic component, and the electrode are sealed using the sealing film according to any one of (17) to (19). ,
The projecting portion is placed on the other side of the substrate while the sealing film is disposed on the electronic component mounting substrate with the insulating layer facing the electronic component mounting substrate so as to cover the substrate and the electronic component. The step of contacting the electrode by folding it to the surface side of
Heating and softening the sealing film, and depressurizing;
The step of sealing the substrate, the electronic component, and the electrode with the sealing film in a state where the protruding portion is in contact with the electrode by cooling and pressurizing the sealing film. A method for sealing an electronic component mounting substrate, comprising:
 (29) 上記(1)ないし(23)のいずれかに記載の封止用フィルムと、該封止用フィルムにより被覆された前記基板、前記電子部品および前記電極を備える前記電子部品搭載基板とを有し、前記突出部は、前記電極に接触していることを特徴とする封止用フィルム被覆電子部品搭載基板。 (29) The sealing film according to any one of (1) to (23), and the electronic component mounting substrate including the substrate, the electronic component, and the electrode covered with the sealing film. A film-covered electronic component mounting substrate for sealing, wherein the protruding portion is in contact with the electrode.
 本発明によれば、封止用フィルムが樹脂材料を主材料として構成され、JIS K 6251に準拠して求められる軟化点における封止用フィルムの伸び率が150%以上3500%以下となっている。かかる封止用フィルムを、まず、基板と電子部品とを覆うように電子部品搭載基板上に配置する。その後、封止用フィルムを加熱し軟化させるとともに減圧する。その後、封止用フィルムを冷却させるとともに加圧する。以上の工程を経ることにより、封止用フィルムが、基板に電子部品を搭載することで形成される凹凸に対して、優れた追従性をもって封止した状態で、基板と電子部品とを被覆することができる。そのため、この封止用フィルムを被覆することで得られた封止用フィルム被覆電子部品搭載基板において、電子部品(特に、電子部品)が湿気や埃等の外部因子と接触するのを的確に抑制または防止することができる。
 また、封止用フィルムにより、基板と電子部品とを被覆する際に、電子部品は、絶縁層を介して電磁波シールド層で封止されるため、得られた封止用フィルム被覆電子部品搭載基板は、電子部品への電磁波によるノイズの影響が的確に抑制または防止されたものとなる。
According to the present invention, the encapsulating film is composed mainly of a resin material, and the elongation rate of the encapsulating film at the softening point required in accordance with JIS K 6251 is 150% or more and 3500% or less. . First, the sealing film is placed on the electronic component mounting substrate so as to cover the substrate and the electronic component. Thereafter, the sealing film is heated and softened, and the pressure is reduced. Thereafter, the sealing film is cooled and pressurized. Through the above steps, the sealing film covers the substrate and the electronic component in a state of sealing with excellent followability with respect to the unevenness formed by mounting the electronic component on the substrate. be able to. Therefore, in the sealing film-covered electronic component mounting substrate obtained by coating this sealing film, the electronic component (particularly, the electronic component) is accurately suppressed from coming into contact with external factors such as moisture and dust. Or it can be prevented.
Further, when the substrate and the electronic component are covered with the sealing film, the electronic component is sealed with the electromagnetic wave shielding layer through the insulating layer, so that the obtained sealing film-covered electronic component mounting substrate is obtained. In this case, the influence of noise due to electromagnetic waves on the electronic component is appropriately suppressed or prevented.
図1は、本発明の封止用フィルムの第1実施形態を示す縦断面図である。FIG. 1 is a longitudinal sectional view showing a first embodiment of a sealing film of the present invention. 図2(a)~(c)は、図1に示す封止用フィルムを用いて電子部品搭載基板の封止方法を説明するための縦断面図である。2A to 2C are longitudinal sectional views for explaining a method for sealing an electronic component mounting substrate using the sealing film shown in FIG. 図3は、本発明の封止用フィルムの第2実施形態を示す縦断面図である。FIG. 3 is a longitudinal sectional view showing a second embodiment of the sealing film of the present invention. 図4(a)~(c)は、図3に示す封止用フィルムを用いて電子部品搭載基板の封止方法を説明するための縦断面図である。4A to 4C are longitudinal sectional views for explaining a method for sealing an electronic component mounting board using the sealing film shown in FIG. 図5は、本発明の封止用フィルムの第3実施形態を示す縦断面図である。FIG. 5 is a longitudinal sectional view showing a third embodiment of the sealing film of the present invention. 図6(a)~(c)は、図5に示す封止用フィルムを用いて電子部品搭載基板の封止方法を説明するための縦断面図である。6A to 6C are longitudinal sectional views for explaining a method for sealing an electronic component mounting substrate using the sealing film shown in FIG. 図7は、本発明の封止用フィルムの第4実施形態を示す縦断面図である。FIG. 7 is a longitudinal sectional view showing a fourth embodiment of the sealing film of the present invention. 図8(a)~(c)は、図7に示す封止用フィルムを用いて電子部品搭載基板の封止方法を説明するための縦断面図である。FIGS. 8A to 8C are longitudinal sectional views for explaining a method for sealing an electronic component mounting board using the sealing film shown in FIG. 図9は、本発明の封止用フィルムの第5実施形態を示す縦断面図である。FIG. 9 is a longitudinal sectional view showing a fifth embodiment of the sealing film of the present invention. 図10(a)~(c)は、図9に示す封止用フィルムを用いて電子部品搭載基板の封止方法を説明するための縦断面図である。FIGS. 10A to 10C are longitudinal sectional views for explaining a method for sealing an electronic component mounting board using the sealing film shown in FIG. 図11は、本発明の封止用フィルムの第6実施形態を示す縦断面図である。FIG. 11: is a longitudinal cross-sectional view which shows 6th Embodiment of the film for sealing of this invention. 図12(a)~(c)は、図11に示す封止用フィルムを用いて電子部品搭載基板の封止方法を説明するための縦断面図である。12 (a) to 12 (c) are longitudinal sectional views for explaining a method for sealing an electronic component mounting board using the sealing film shown in FIG. 図13は、本発明の封止用フィルムの第7実施形態を示す縦断面図である。FIG. 13: is a longitudinal cross-sectional view which shows 7th Embodiment of the film for sealing of this invention. 図14(a)~(c)は、図13に示す封止用フィルムを用いて電子部品搭載基板の封止方法を説明するための縦断面図である。FIGS. 14A to 14C are longitudinal sectional views for explaining a method of sealing an electronic component mounting board using the sealing film shown in FIG. 図15は、本発明の封止用フィルムの第8実施形態を示す縦断面図である。FIG. 15 is a longitudinal sectional view showing an eighth embodiment of the sealing film of the present invention. 図16(a)~(c)は、図15に示す封止用フィルムを用いて電子部品搭載基板の封止方法を説明するための縦断面図である。16 (a) to 16 (c) are longitudinal sectional views for explaining a method of sealing an electronic component mounting board using the sealing film shown in FIG. 図17は、本発明の封止用フィルムの第9実施形態を示す縦断面図である。FIG. 17: is a longitudinal cross-sectional view which shows 9th Embodiment of the film for sealing of this invention. 図18(a)~(c)は、図17に示す封止用フィルムを用いて電子部品搭載基板の封止方法を説明するための縦断面図である。18 (a) to 18 (c) are longitudinal sectional views for explaining a method of sealing an electronic component mounting board using the sealing film shown in FIG. 図19は、本発明の封止用フィルムの第10実施形態を示す縦断面図である。FIG. 19 is a longitudinal sectional view showing a tenth embodiment of the sealing film of the present invention. 図20(a)~(c)は、図19に示す封止用フィルムを用いて電子部品搭載基板の封止方法を説明するための縦断面図である。20A to 20C are longitudinal sectional views for explaining a method of sealing an electronic component mounting board using the sealing film shown in FIG. 図21は、本発明の封止用フィルムの第11実施形態を示す縦断面図である。FIG. 21 is a longitudinal sectional view showing an eleventh embodiment of the sealing film of the present invention. 図22(a)~(c)は、図21に示す封止用フィルムを用いて電子部品搭載基板の封止方法を説明するための縦断面図である。FIGS. 22A to 22C are longitudinal sectional views for explaining a method of sealing an electronic component mounting substrate using the sealing film shown in FIG. 図23(a)および(b)は、封止用フィルムの第1参考形態を示す図である。FIGS. 23A and 23B are views showing a first reference form of the sealing film. 図24(a)~(c)は、図23に示す封止用フィルムを用いて電子部品搭載基板の封止方法を説明するための縦断面図である。24A to 24C are longitudinal sectional views for explaining a method for sealing an electronic component mounting board using the sealing film shown in FIG. 図25(a)および(b)は、本発明の封止用フィルムの第12実施形態を示す図である。FIGS. 25A and 25B are views showing a twelfth embodiment of the sealing film of the present invention. 図26(a)~(c)は、図25に示す封止用フィルムを用いて電子部品搭載基板の封止方法を説明するための縦断面図である。FIGS. 26A to 26C are longitudinal sectional views for explaining a method of sealing an electronic component mounting board using the sealing film shown in FIG. 図27(a)および(b)は、本発明の封止用フィルムの第13実施形態を示す図である。FIGS. 27A and 27B are views showing a thirteenth embodiment of the sealing film of the present invention. 図28(a)~(c)は、図27に示す封止用フィルムを用いて電子部品搭載基板の封止方法を説明するための縦断面図である。FIGS. 28A to 28C are longitudinal sectional views for explaining a method for sealing an electronic component mounting board using the sealing film shown in FIG. 図29(a)および(b)は、本発明の封止用フィルムの第14実施形態を示す図である。FIGS. 29A and 29B are views showing a fourteenth embodiment of a sealing film of the present invention. 図30(a)~(c)は、図29に示す封止用フィルムを用いて電子部品搭載基板の封止方法を説明するための縦断面図である。FIGS. 30A to 30C are longitudinal sectional views for explaining a method of sealing an electronic component mounting board using the sealing film shown in FIG. 図31(a)および(b)は、本発明の封止用フィルムの第15実施形態を示す図である。FIGS. 31A and 31B are views showing a fifteenth embodiment of a sealing film of the present invention. 図32(a)~(c)は、図31に示す封止用フィルムを用いて電子部品搭載基板の封止方法を説明するための縦断面図である。32 (a) to 32 (c) are longitudinal sectional views for explaining a method of sealing an electronic component mounting board using the sealing film shown in FIG. 図33(a)および(b)は、本発明の封止用フィルムの第16実施形態を示す図である。FIGS. 33A and 33B are views showing a sixteenth embodiment of the sealing film of the present invention. 図34(a)~(c)は、図33に示す封止用フィルムを用いて電子部品搭載基板の封止方法を説明するための縦断面図である。34A to 34C are longitudinal sectional views for explaining a method of sealing an electronic component mounting board using the sealing film shown in FIG. 図35(a)および(b)は、本発明の封止用フィルムの第17実施形態を示す図である。FIGS. 35A and 35B are views showing a seventeenth embodiment of the sealing film of the present invention. 図36(a)~(c)は、図35に示す封止用フィルムを用いて電子部品搭載基板の封止方法を説明するための縦断面図である。36 (a) to 36 (c) are longitudinal sectional views for explaining a method of sealing an electronic component mounting board using the sealing film shown in FIG. 図37(a)および(b)は、本発明の封止用フィルムの第18実施形態を示す図である。FIGS. 37A and 37B are views showing an eighteenth embodiment of the sealing film of the present invention. 図38(a)~(c)は、図37に示す封止用フィルムを用いて電子部品搭載基板の封止方法を説明するための縦断面図である。FIGS. 38A to 38C are longitudinal sectional views for explaining a method of sealing an electronic component mounting board using the sealing film shown in FIG. 図39(a)および(b)は、本発明の封止用フィルムの第19実施形態を示す図である。FIGS. 39A and 39B are views showing a nineteenth embodiment of a sealing film of the present invention. 図40(a)~(c)は、図39に示す封止用フィルムを用いて電子部品搭載基板の封止方法を説明するための縦断面図である。40A to 40C are longitudinal sectional views for explaining a method of sealing an electronic component mounting board using the sealing film shown in FIG. 図41(a)および(b)は、本発明の封止用フィルムの第20実施形態を示す図である。41 (a) and 41 (b) are views showing a twentieth embodiment of the sealing film of the present invention. 図42(a)~(c)は、図41に示す封止用フィルムを用いて電子部品搭載基板の封止方法を説明するための縦断面図である。42 (a) to 42 (c) are longitudinal sectional views for explaining a method of sealing an electronic component mounting board using the sealing film shown in FIG. 図43は、本発明の封止用フィルムの第21実施形態を示す縦断面図である。FIG. 43 is a longitudinal sectional view showing a twenty-first embodiment of the sealing film of the present invention. 図44(a)~(c)は、図43に示す封止用フィルムを用いて電子部品搭載基板の封止方法を説明するための縦断面図である。44 (a) to 44 (c) are longitudinal sectional views for explaining a method of sealing an electronic component mounting board using the sealing film shown in FIG.
 以下、本発明の封止用フィルム、電子部品搭載基板の封止方法および封止用フィルム被覆電子部品搭載基板を、添付図面に示す好適実施形態に基づいて、詳細に説明する。 Hereinafter, a sealing film, an electronic component mounting substrate sealing method, and a sealing film-covered electronic component mounting substrate according to the present invention will be described in detail based on preferred embodiments shown in the accompanying drawings.
 本発明の封止用フィルムは、基板と、該基板の一方の面側に搭載された電子部品とを備える電子部品搭載基板を封止するのに用いられる封止用フィルムであって、絶縁層と、該絶縁層の一方の面側に積層された電磁波シールド層とを有し、、絶縁層および電磁波シールド層は、ともに、樹脂材料を含有し、この封止用フィルムは、JIS K 6251に準拠して求められる軟化点における伸び率が150%以上3500%以下であることを特徴とする。 The sealing film of the present invention is a sealing film used for sealing an electronic component mounting substrate comprising a substrate and an electronic component mounted on one surface side of the substrate, and an insulating layer And an electromagnetic wave shielding layer laminated on one surface side of the insulating layer. The insulating layer and the electromagnetic wave shielding layer both contain a resin material, and this sealing film conforms to JIS K 6251. The elongation at the softening point determined in conformity is 150% or more and 3500% or less.
 また、本発明の電子部品搭載基板の封止方法は、上記の封止用フィルムを用いて、電子部品搭載基板が備える基板と電子部品とを被覆する電子部品搭載基板の封止方法であり、基板と電子部品とを覆うように、絶縁層を電子部品搭載基板側にして封止用フィルムを電子部品搭載基板上に配置する工程(配置工程)と、封止用フィルムを加熱し軟化させるとともに、減圧する工程(加熱・減圧工程)と、封止用フィルムを冷却させるとともに、加圧することで、基板と電子部品とを封止用フィルムで封止する工程(冷却・加圧工程)とを有することを特徴とする。 Moreover, the sealing method of the electronic component mounting substrate of the present invention is a sealing method of the electronic component mounting substrate that covers the electronic component mounting substrate and the electronic component mounting substrate, using the sealing film described above. A step of placing the sealing film on the electronic component mounting substrate with the insulating layer facing the electronic component mounting substrate so as to cover the substrate and the electronic component (placement step), and heating and softening the sealing film The step of reducing pressure (heating / depressurization step) and the step of cooling the sealing film and pressurizing the substrate and the electronic component with the sealing film (cooling / pressurization step) It is characterized by having.
 このような封止用フィルムを、基板上に電子部品が搭載されることにより形成された凹凸の被覆に適用すると、前記冷却・加圧工程において、軟化された状態の封止用フィルムが、加圧された状態で冷却されることから、凹凸に対して優れた追従性をもって封止した状態で、基板と電子部品とを被覆することができる。そのため、この封止用フィルムを被覆することで得られる封止用フィルム被覆電子部品搭載基板において、電子部品が湿気や埃等の外部因子と接触するのを的確に抑制または防止することができる。したがって、得られた封止用フィルム被覆電子部品搭載基板ひいてはこの封止用フィルム被覆電子部品搭載基板を備える電子機器の信頼性の向上を図ることができる。 When such a sealing film is applied to an uneven coating formed by mounting an electronic component on a substrate, the softened sealing film is added in the cooling / pressurizing step. Since it cools in the pressed state, it can coat | cover a board | substrate and an electronic component in the state sealed with the outstanding followable | trackability with respect to an unevenness | corrugation. Therefore, in the sealing film-covered electronic component mounting substrate obtained by coating the sealing film, it is possible to accurately suppress or prevent the electronic component from coming into contact with external factors such as moisture and dust. Therefore, it is possible to improve the reliability of the obtained electronic device equipped with the sealing film-covered electronic component mounting substrate and thus the sealing film-covered electronic component mounting substrate.
 また、封止用フィルムにより、基板と電子部品とを被覆する際に、電子部品は、絶縁層を介して電磁波シールド層で封止される。そのため、得られた封止用フィルム被覆電子部品搭載基板は、電子部品への電磁波によるノイズの影響が的確に抑制または防止されたものとなる。 Further, when the substrate and the electronic component are covered with the sealing film, the electronic component is sealed with the electromagnetic wave shielding layer through the insulating layer. Therefore, in the obtained film-covered electronic component mounting substrate for sealing, the influence of noise due to electromagnetic waves on the electronic component is accurately suppressed or prevented.
 なお、電子部品が搭載された基板の一方の面側に、電子部品に電気的に接続される電極が設けられている場合には、封止用フィルムが、基板上に電子部品および電極が搭載されることにより形成される凹凸に対する優れた追従性をもって、基板、電子部品および電極を封止(被覆)することができる。この場合にも、上述した効果が得られる。 When an electrode that is electrically connected to the electronic component is provided on one surface side of the substrate on which the electronic component is mounted, the sealing film is mounted on the substrate and the electronic component and the electrode are mounted on the substrate. Thus, the substrate, the electronic component, and the electrode can be sealed (coated) with excellent followability to the unevenness formed. Also in this case, the above-described effects can be obtained.
 <第1実施形態>
 [封止用フィルム]
 まず、本発明の封止用フィルム100の第1実施形態について説明する。
<First Embodiment>
[Sealing film]
First, 1st Embodiment of the film 100 for sealing of this invention is described.
 図1は、本発明の封止用フィルムの第1実施形態を示す縦断面図、図2(a)~(c)は、本発明の封止用フィルムを用いて電子部品搭載基板の封止方法を説明するための縦断面図である。なお、以下の説明では、説明の便宜上、図1、図2中の上側を「上」、下側を「下」と言う。 FIG. 1 is a longitudinal sectional view showing a first embodiment of a sealing film of the present invention, and FIGS. 2A to 2C are diagrams for sealing an electronic component mounting substrate using the sealing film of the present invention. It is a longitudinal cross-sectional view for demonstrating a method. In the following description, for convenience of description, the upper side in FIGS. 1 and 2 is referred to as “upper” and the lower side is referred to as “lower”.
 封止用フィルム100は、絶縁層12と、この絶縁層12の一方の面側(上面側)に積層された電磁波シールド層13とを備え、絶縁層12および電磁波シールド層13が、ともに、樹脂材料を含有し、JIS K 6251に準拠して求められる軟化点における伸び率が150%以上3500%以下となっている。 The sealing film 100 includes an insulating layer 12 and an electromagnetic wave shielding layer 13 laminated on one surface side (upper surface side) of the insulating layer 12, and both the insulating layer 12 and the electromagnetic wave shielding layer 13 are made of resin. It contains materials, and the elongation at the softening point required in accordance with JIS K 6251 is 150% or more and 3500% or less.
 このような絶縁層12と電磁波シールド層13とを備える積層体で構成される封止用フィルム100は、前記伸び率が前記範囲内を満足し得るものであれば、これら絶縁層12と電磁波シールド層13とに含まれる樹脂材料は、如何なるもので構成されていてもよい。かかる樹脂材料は、例えば、低密度ポリエチレン、高密度ポリエチレン、エチレン共重合体、延伸ポリプロピレン、未延伸ポリプロピレンのようなポリオレフィン系樹脂、アイオノマー樹脂、ポリエチレンテレフタレート、ポリブチレンテレフタレートのようなポリエステル系樹脂、ポリカーボネート樹脂、ナイロン-6、ナイロン-6,6、ナイロン-6,10、ヘキサメチレンジアミンとテレフタル酸とからなるナイロン-6T、ヘキサメチレンジアミンとイソフタル酸とからなるナイロン-6I、ノナンジアミンとテレフタル酸とからなるナイロン-9T、メチルペンタジアミンとテレフタル酸とからなるナイロン-M5T、カプロラクタムとラウリルラクタムとからなるナイロン-6,12、ヘキサメチレンジアミンとアジピン酸とカプロラクタムとからなるナイロン-6、ナイロン-6,6のようなポリアミド系樹脂、アクリル樹脂、スチレン系樹脂、ポリ塩化ビニルおよびポリビニルアルコール等の熱可塑性樹脂が挙げられ、これらのうちの1種または2種以上を組み合わせて用いることができる。また、絶縁層12および電磁波シールド層13のそれぞれに含まれる樹脂材料は、同一であってもよいし、異なっても良い。 If the sealing film 100 comprised by the laminated body provided with such an insulating layer 12 and the electromagnetic wave shielding layer 13 will be sufficient if the said elongation rate can satisfy | fill the said range, these insulating layers 12 and an electromagnetic wave shield The resin material contained in the layer 13 may be composed of any material. Such resin materials include, for example, low density polyethylene, high density polyethylene, ethylene copolymer, polyolefin resin such as stretched polypropylene and unstretched polypropylene, ionomer resin, polyethylene terephthalate, polyester resin such as polybutylene terephthalate, polycarbonate Resin, nylon-6, nylon-6,6, nylon-6,10, nylon-6T composed of hexamethylenediamine and terephthalic acid, nylon-6I composed of hexamethylenediamine and isophthalic acid, nonanediamine and terephthalic acid Nylon-9T, Nylon-M5T composed of methylpentadiamine and terephthalic acid, Nylon-6,12 composed of caprolactam and lauryllactam, Hexamethylenediamine and adipic acid Examples thereof include polyamide resins such as nylon-6 and nylon-6,6 made of prolactam, thermoplastic resins such as acrylic resins, styrene resins, polyvinyl chloride and polyvinyl alcohol, one of these or Two or more kinds can be used in combination. Moreover, the resin material contained in each of the insulating layer 12 and the electromagnetic wave shielding layer 13 may be the same or different.
 さらに、絶縁層12と電磁波シールド層13とに含まれる樹脂材料は、上述した熱可塑性樹脂材料の他に、エポキシ樹脂、フェノール樹脂、メラミン樹脂、シリコーン樹脂のような熱硬化性樹脂やアクリル樹脂やウレタン樹脂のようなUV硬化性樹脂が含まれていてもよい。 Further, the resin material contained in the insulating layer 12 and the electromagnetic wave shielding layer 13 may be a thermosetting resin such as an epoxy resin, a phenol resin, a melamine resin, or a silicone resin, an acrylic resin, A UV curable resin such as a urethane resin may be included.
 このような樹脂材料を含有する絶縁層12および電磁波シールド層13のうち、絶縁層12は、前記樹脂材料を主材料として含有する層で構成され、電磁波シールド層13は、前記樹脂材料と、導電性を備える導電性粒子とを含有する層で構成される。絶縁層12および電磁波シールド層13をかかる構成とすることで、絶縁層12が、絶縁性を有し、電磁波シールド層13が、導電性および電磁波シールド性の双方を有する。 Of the insulating layer 12 and the electromagnetic wave shielding layer 13 containing such a resin material, the insulating layer 12 is composed of a layer containing the resin material as a main material, and the electromagnetic wave shielding layer 13 is electrically conductive with the resin material. It is comprised by the layer containing the electroconductive particle provided with property. By adopting such a configuration as the insulating layer 12 and the electromagnetic wave shielding layer 13, the insulating layer 12 has insulating properties, and the electromagnetic wave shielding layer 13 has both conductivity and electromagnetic wave shielding properties.
 上記のような樹脂材料を含有する絶縁層12と電磁波シールド層13とを備える封止用フィルム100は、ポリオレフィン系樹脂を前記樹脂材料として含有する層を、絶縁層12および電磁波シールド層13のうちの少なくとも1層として備えることが好ましい。これにより、封止用フィルム100の軟化点における伸び率を容易に150%以上3500%以下に設定することができる。 The sealing film 100 including the insulating layer 12 containing the resin material as described above and the electromagnetic wave shielding layer 13 includes a layer containing a polyolefin-based resin as the resin material, among the insulating layer 12 and the electromagnetic wave shielding layer 13. It is preferable to provide as at least one layer. Thereby, the elongation at the softening point of the sealing film 100 can be easily set to 150% or more and 3500% or less.
 そこで、以下では、前記樹脂材料を主材料として含有する絶縁層12と、前記樹脂材料と導電性粒子とを含有する電磁波シールド層13とを備え、絶縁層12に含まれる樹脂材料がポリオレフィン系樹脂である封止用フィルム100を、一例として説明する。 Therefore, in the following, an insulating layer 12 containing the resin material as a main material and an electromagnetic wave shielding layer 13 containing the resin material and conductive particles are provided, and the resin material contained in the insulating layer 12 is a polyolefin resin. An example of the sealing film 100 will be described.
 図1、2に示すように、本実施形態において、封止用フィルム100は、電磁波シールド層13と、絶縁層12とを備え、これらが、被覆すべき電子部品搭載基板45の反対側(上面側)から、この順で積層されている積層体で構成されている。そして、電磁波シールド層13は、絶縁層12よりも大きく形成され、その端部が絶縁層12の端部(縁部)から露出している。換言すれば、電磁波シールド層13は、絶縁層12の端部を越えて突出することで形成された突出部15を備えている。 As shown in FIGS. 1 and 2, in this embodiment, the sealing film 100 includes an electromagnetic wave shielding layer 13 and an insulating layer 12, which are on the opposite side (upper surface) of the electronic component mounting substrate 45 to be covered. (Side) from the side, it is comprised with the laminated body laminated | stacked in this order. The electromagnetic wave shielding layer 13 is formed larger than the insulating layer 12, and an end portion thereof is exposed from an end portion (edge portion) of the insulating layer 12. In other words, the electromagnetic wave shielding layer 13 includes the protruding portion 15 formed by protruding beyond the end portion of the insulating layer 12.
 なお、封止用フィルム100により被覆される電子部品搭載基板45は、基板5と、基板5の上面(一方の面)の中央部に搭載(載置)された電子部品4と、この電子部品4に電気的に接続され、基板5の上面の端部に形成された電極3とを備えている。このような電子部品搭載基板45において、基板5の上面への電子部品4および電極3の搭載により、基板5上に凸部61と凹部62とからなる凹凸6が形成され、この凹凸6が、封止用フィルム100を用いて被覆される。なお、基板5としては、例えば、プリント配線基板が挙げられ、基板5上に搭載する電子部品4としては、例えば、半導体素子、コンデンサー、コイル、コネクターおよび抵抗等が挙げられ、電極3としては、例えば、外部から電気を供給するための電源と接続するための電極、他の電子部品と電気的に接続するための電極、および、電子部品4を接地するためのグランド電極等が挙げられる。 The electronic component mounting substrate 45 covered with the sealing film 100 includes the substrate 5, the electronic component 4 mounted (mounted) on the center of the upper surface (one surface) of the substrate 5, and the electronic component. 4 and an electrode 3 formed on the end of the upper surface of the substrate 5. In such an electronic component mounting substrate 45, by mounting the electronic component 4 and the electrode 3 on the upper surface of the substrate 5, the unevenness 6 including the convex portions 61 and the concave portions 62 is formed on the substrate 5. It is covered with a sealing film 100. Examples of the substrate 5 include a printed wiring board. Examples of the electronic component 4 mounted on the substrate 5 include a semiconductor element, a capacitor, a coil, a connector, and a resistor. For example, an electrode for connecting to a power source for supplying electricity from the outside, an electrode for electrically connecting to another electronic component, a ground electrode for grounding the electronic component 4 and the like can be mentioned.
 絶縁層12は、封止用フィルム100の軟化点における伸び率を150%以上3500%以下に設定して、凹凸6への優れた密着性および優れた形状追従性を持たせることを目的に、本実施形態では、ポリオレフィン系樹脂(エチレン共重合体)としてのエチレン-酢酸ビニル共重合体を主材料として含有する層である。 The insulating layer 12 has an elongation at the softening point of the sealing film 100 set to 150% or more and 3500% or less, for the purpose of having excellent adhesion to the irregularities 6 and excellent shape followability. In this embodiment, the layer contains an ethylene-vinyl acetate copolymer as a polyolefin resin (ethylene copolymer) as a main material.
 また、絶縁層12は、樹脂材料としてエチレン-酢酸ビニル共重合体を主材料として含有することで、絶縁性を備える層である。この絶縁層12は、電子部品搭載基板45を封止用フィルム100で被覆する際に、電子部品4と導電性を有する電磁波シールド層13との間に介在することで、電子部品4同士、さらには電子部品4と電極3との間で短絡が生じるのを防止するための層として機能する。 Further, the insulating layer 12 is a layer having insulation properties by containing an ethylene-vinyl acetate copolymer as a resin material as a main material. The insulating layer 12 is interposed between the electronic component 4 and the electromagnetic wave shielding layer 13 having conductivity when the electronic component mounting substrate 45 is covered with the sealing film 100, so that the electronic components 4, Functions as a layer for preventing a short circuit between the electronic component 4 and the electrode 3.
 このエチレン-酢酸ビニル共重合体としては、共重合されるVA含有量が5重量%以上30重量%以下であることが好ましく、10重量%以上20重量%以下であることがより好ましい。前記下限値未満であると、封止用フィルム100の軟化点における伸び率を前記範囲内に設定することが困難となるおそれがある。これに対して、前記上限値を超えると、絶縁層12を構成する樹脂の結晶部が減少し、非結晶部が増加する傾向を示すことに起因して、絶縁層12に残存する酸化防止剤等の添加剤が溶出するおそれがある。そのため、電子部品搭載基板45側に移行し、その結果、電子部品4の特性に不都合が生じるおそれがある。 In this ethylene-vinyl acetate copolymer, the VA content to be copolymerized is preferably 5% by weight to 30% by weight, and more preferably 10% by weight to 20% by weight. If it is less than the lower limit, it may be difficult to set the elongation at the softening point of the sealing film 100 within the above range. On the other hand, if the upper limit is exceeded, the crystal part of the resin constituting the insulating layer 12 decreases and the non-crystalline part tends to increase, so that the antioxidant remaining in the insulating layer 12 Such additives may be eluted. For this reason, the electronic component mounting board 45 side is shifted, and as a result, there is a possibility that the characteristics of the electronic component 4 may be inconvenient.
 また、絶縁層12の平均厚さは、5μm以上200μm以下であることが好ましく、20μm以上120μm以下であることがより好ましい。絶縁層12の平均厚さをかかる範囲内に設定することにより、封止用フィルム100の軟化点における伸び率を150%以上3500%以下の範囲内に確実に設定することができる。また、電磁波シールド層13の電子部品4に対する絶縁性をより確実に確保することができる。 Further, the average thickness of the insulating layer 12 is preferably 5 μm or more and 200 μm or less, and more preferably 20 μm or more and 120 μm or less. By setting the average thickness of the insulating layer 12 within such a range, the elongation at the softening point of the sealing film 100 can be reliably set within a range of 150% to 3500%. In addition, the insulation of the electromagnetic wave shielding layer 13 with respect to the electronic component 4 can be more reliably ensured.
 なお、絶縁層12に含まれる樹脂材料としては、ポリオレフィン系樹脂(エチレン共重合体)としてのエチレン-酢酸ビニル共重合体の他、後述する電磁波シールド層13に含まれるアイオノマー樹脂であってもよいし、エチレン-酢酸ビニル共重合体以外のポリオレフィン系樹脂であってもよい。 The resin material contained in the insulating layer 12 may be an ionomer resin contained in the electromagnetic wave shielding layer 13 described later, in addition to an ethylene-vinyl acetate copolymer as a polyolefin resin (ethylene copolymer). Further, a polyolefin resin other than the ethylene-vinyl acetate copolymer may be used.
 電磁波シールド層13は、封止用フィルム100の軟化点における伸び率を150%以上3500%以下に設定して、凹凸6への密着性および形状追従性に優れたものとすること、さらには、封止用フィルム100を強靱性に優れたものとすることを目的に、本実施形態では、樹脂材料としてアイオノマー樹脂を含有する。また、樹脂材料(アイオノマー)は、下記の導電性材料を層中に保持するバインダーとしても機能する。 The electromagnetic wave shielding layer 13 has an elongation at the softening point of the sealing film 100 set to 150% or more and 3500% or less, and has excellent adhesion to the unevenness 6 and shape followability, For the purpose of making the sealing film 100 excellent in toughness, in this embodiment, an ionomer resin is contained as a resin material. The resin material (ionomer) also functions as a binder that holds the following conductive material in the layer.
 また、電磁波シールド層13は、樹脂材料としてアイオノマー樹脂の他に、さらに、導電性を有する導電性粒子を含有することで、導電性および電磁波シールド性を備える層である。そして、この電磁波シールド層13は、絶縁層12よりも大きく形成され、その中央部において絶縁層12が積層されるが、端部において、絶縁層12の端部を越えて突出することで形成された突出部15を備えている。 Further, the electromagnetic wave shielding layer 13 is a layer having conductivity and electromagnetic wave shielding properties by further containing conductive particles having conductivity in addition to the ionomer resin as a resin material. The electromagnetic wave shielding layer 13 is formed larger than the insulating layer 12, and the insulating layer 12 is laminated at the center portion thereof, but is formed by protruding beyond the end portion of the insulating layer 12 at the end portion. The protrusion part 15 is provided.
 このような電磁波シールド層13により、電子部品搭載基板45を封止用フィルム100で被覆する際に、その中央部では、絶縁層12を介して、電子部品4が被覆される。そのため、電子部品搭載基板45を封止用フィルム100で被覆することで得られる封止用フィルム被覆電子部品搭載基板50を、電子部品4への電磁波によるノイズの影響が的確に抑制または防止されたものとすることができる。さらに、電磁波シールド層13の端部では、絶縁層12が介在することなく、導電性を有する突出部15が電極3を直接被覆することで、電極3が突出部15(電磁波シールド層13)に電気的に接続される。そのため、得られる封止用フィルム被覆電子部品搭載基板50において、この突出部15を介した電極3と外部との電気的な接続を確保することが可能となる。 When the electronic component mounting substrate 45 is covered with the sealing film 100 by such an electromagnetic wave shielding layer 13, the electronic component 4 is covered through the insulating layer 12 at the center. Therefore, the influence of noise due to electromagnetic waves on the electronic component 4 is accurately suppressed or prevented in the sealing film-covered electronic component mounting substrate 50 obtained by covering the electronic component mounting substrate 45 with the sealing film 100. Can be. Further, at the end portion of the electromagnetic wave shielding layer 13, the insulating projecting portion 15 directly covers the electrode 3 without the insulating layer 12, so that the electrode 3 becomes the projecting portion 15 (the electromagnetic shielding layer 13). Electrically connected. Therefore, in the obtained film-covered electronic component mounting substrate 50 for sealing, it is possible to ensure electrical connection between the electrode 3 and the outside via the protruding portion 15.
 ここで、本明細書中において、樹脂材料としてのアイオノマー樹脂とは、エチレンおよび(メタ)アクリル酸を重合体の構成成分とする2元共重合体や、エチレン、(メタ)アクリル酸および(メタ)アクリル酸エステルを重合体の構成成分とする3元共重合体を、金属イオンで架橋した樹脂のことを言い、これらのうちの1種または2種を組み合わせて用いることができる。 Here, in this specification, the ionomer resin as the resin material means a binary copolymer containing ethylene and (meth) acrylic acid as a constituent component of the polymer, ethylene, (meth) acrylic acid and (meta ) Refers to a resin obtained by crosslinking a terpolymer having an acrylic ester as a constituent of a polymer with a metal ion, and one or two of them can be used in combination.
 また、金属イオンとしては、例えば、カリウムイオン(K)、ナトリウムイオン(Na)、リチウムイオン(Li)、マグネシウムイオン(Mg++)、亜鉛イオン(Zn++)等が挙げられる。これらの中でも、ナトリウムイオン(Na)または亜鉛イオン(Zn++)であることが好ましい。これにより、アイオノマー樹脂における架橋構造が安定化されるため、前述した電磁波シールド層13としての機能をより顕著に発揮させることができる。 Examples of the metal ion include potassium ion (K + ), sodium ion (Na + ), lithium ion (Li + ), magnesium ion (Mg ++ ), and zinc ion (Zn ++ ). Among these, sodium ions (Na + ) or zinc ions (Zn ++ ) are preferable. Thereby, since the crosslinked structure in the ionomer resin is stabilized, the function as the electromagnetic wave shielding layer 13 described above can be exhibited more remarkably.
 さらに、エチレンおよび(メタ)アクリル酸を重合体の構成成分とする2元共重合体、もしくは、エチレン、(メタ)アクリル酸および(メタ)アクリル酸エステルを重合体の構成成分とする3元共重合体のカルボキシル基における陽イオン(金属イオン)による中和度は、好ましくは40mol%以上75mol%以下である。 Further, a binary copolymer having ethylene and (meth) acrylic acid as constituent components of the polymer, or a ternary copolymer having ethylene, (meth) acrylic acid and (meth) acrylic acid ester as constituent components of the polymer. The degree of neutralization by the cation (metal ion) in the carboxyl group of the polymer is preferably 40 mol% or more and 75 mol% or less.
 また、導電性粒子は、電磁波シールド層13に導電性および電磁波シールド性の双方を付与し得るものであれば、特に限定されず、例えば、金、銀、銅、鉄、ニッケルおよびアルミニウム、またはこれらを含む合金のような金属、および、AFe(式中、Aは、Mn、Co、Ni、CuまたはZnである)で表されるフェライト、ITO、ATO、FTOのような金属酸化物等を含むものが挙げられ、これらのうちの1種または2種以上を組み合わせて用いることができる。なお、導電性粒子は、このような金属および/または金属酸化物を含むものの他、ポリアセチレン、ポリピロール、ポリチオフェン、ポリアニリン、ポリ(p-フェニレン)、ポリフルオレンのような導電性高分子、カーボンナノチューブ、カーボンナノファイバー、カーボンブラックのような炭素系材料を含有するものであってもよい。 Further, the conductive particles are not particularly limited as long as they can impart both conductivity and electromagnetic wave shielding properties to the electromagnetic wave shielding layer 13. For example, gold, silver, copper, iron, nickel and aluminum, or these And metal oxides such as ferrite, ITO, ATO, and FTO represented by metals such as alloys containing AFe 2 O 4 (wherein A is Mn, Co, Ni, Cu, or Zn) Etc. are included, and one or more of these can be used in combination. The conductive particles include those containing such metals and / or metal oxides, conductive polymers such as polyacetylene, polypyrrole, polythiophene, polyaniline, poly (p-phenylene) and polyfluorene, carbon nanotubes, It may contain a carbon-based material such as carbon nanofiber or carbon black.
 導電性粒子の平均粒径は、1.0μm以上10.0μm以下であるのが好ましく、3.0μm以上8.0μm以下であるのがより好ましい。これにより、導電性粒子を電磁波シールド層13中に均一に分散させることができる。そのため、電磁波シールド層13は、その特性を均質に発揮することができる。 The average particle diameter of the conductive particles is preferably 1.0 μm or more and 10.0 μm or less, and more preferably 3.0 μm or more and 8.0 μm or less. As a result, the conductive particles can be uniformly dispersed in the electromagnetic wave shielding layer 13. Therefore, the electromagnetic wave shielding layer 13 can exhibit its characteristics uniformly.
 また、電磁波シールド層13中における導電性粒子の含有量は、10重量%以上95重量%以下であることが好ましく、50重量%以上90重量%以下であることがより好ましい。導電性粒子の含有量をかかる範囲内に設定することにより、電磁波シールド層13に導電性および電磁波シールド性の双方を確実に付与しつつ、軟化点における伸び率が150%以上3500%以下の範囲内に確実に設定された封止用フィルム100を得ることができる。 Further, the content of the conductive particles in the electromagnetic wave shielding layer 13 is preferably 10% by weight or more and 95% by weight or less, and more preferably 50% by weight or more and 90% by weight or less. By setting the content of the conductive particles within such a range, both the conductivity and the electromagnetic wave shielding property are surely imparted to the electromagnetic wave shielding layer 13, and the elongation at the softening point is in the range of 150% to 3500%. The film 100 for sealing set reliably in the inside can be obtained.
 また、電磁波シールド層13の平均厚さは、1μm以上400μm以下であることが好ましく、5μm以上200μm以下であることがより好ましい。電磁波シールド層13の平均厚さをかかる範囲内に設定することにより、封止用フィルム100を強靱性に優れ、かつ、封止用フィルム100の軟化点における伸び率が150%以上3500%以下の範囲内に確実に設定することができる。さらに、電磁波シールド層13に、導電性および電磁波シールド性の双方を確実に付与することができる。 Further, the average thickness of the electromagnetic wave shielding layer 13 is preferably 1 μm or more and 400 μm or less, and more preferably 5 μm or more and 200 μm or less. By setting the average thickness of the electromagnetic wave shielding layer 13 within such a range, the sealing film 100 is excellent in toughness, and the elongation at the softening point of the sealing film 100 is 150% or more and 3500% or less. It can be reliably set within the range. Furthermore, both the conductivity and the electromagnetic wave shielding property can be reliably imparted to the electromagnetic wave shielding layer 13.
 なお、電磁波シールド層13に含まれる樹脂材料としては、アイオノマー樹脂の他、絶縁層12に含まれるエチレン-酢酸ビニル共重合体や、それ以外のポリオレフィン系樹脂であってもよい。 The resin material contained in the electromagnetic wave shielding layer 13 may be an ionomer resin, an ethylene-vinyl acetate copolymer contained in the insulating layer 12, or other polyolefin resin.
 また、封止用フィルム100では、絶縁層12と電磁波シールド層13との間には、接着性を付与したり、あるいは接着性を高めるために必要に応じて接着層を設けるようにすることもできる。また、絶縁層12と電子部品搭載基板45との間の接着性を高めるために、必要に応じて絶縁層12の内側に接着層を設けることもできる。 Further, in the sealing film 100, an adhesive layer may be provided between the insulating layer 12 and the electromagnetic wave shielding layer 13 as necessary in order to impart adhesiveness or to improve adhesiveness. it can. Moreover, in order to improve the adhesiveness between the insulating layer 12 and the electronic component mounting substrate 45, an adhesive layer can be provided inside the insulating layer 12 as necessary.
 接着層に含まれる接着性樹脂としては、例えば、EVA、エチレン-無水マレイン酸共重合体、EAA、EEA、エチレン-メタクリレート-グリシジルアクリレート三元共重合体、あるいは、各種ポリオレフィンに、アクリル酸、メタクリル酸などの一塩基性不飽和脂肪酸、マレイン酸、フマル酸、イタコン酸などの二塩基性不飽和脂肪酸またはこれらの無水物をグラフトさせたもの、例えば、マレイン酸グラフト化EVA、マレイン酸グラフト化エチレン-α-オレフィン共重合体、スチレン系エラストマー、アクリル樹脂等、公知の粘着性樹脂や接着性樹脂を適宜、使用することができる。 Examples of the adhesive resin contained in the adhesive layer include EVA, ethylene-maleic anhydride copolymer, EAA, EEA, ethylene-methacrylate-glycidyl acrylate terpolymer, or various polyolefins such as acrylic acid, methacrylic acid, Monobasic unsaturated fatty acids such as acids, dibasic unsaturated fatty acids such as maleic acid, fumaric acid, itaconic acid or the like grafted with these anhydrides, such as maleic acid grafted EVA, maleic acid grafted ethylene Known adhesive resins and adhesive resins such as -α-olefin copolymers, styrene elastomers and acrylic resins can be used as appropriate.
 さらに、電磁波シールド層13と絶縁層12とが積層された封止用フィルム100を製造する製造方法については、特に限定されず、例えば、公知の共押出法、ドライラミネート法、押出ラミ法、塗工積層等を用いて、成膜および積層を行うことにより得ることができる。 Further, the production method for producing the sealing film 100 in which the electromagnetic wave shielding layer 13 and the insulating layer 12 are laminated is not particularly limited. For example, a known co-extrusion method, dry lamination method, extrusion lamination method, coating method It can be obtained by performing film formation and lamination using a process lamination or the like.
 ここで、封止用フィルム100を、上記のような構成の電磁波シールド層13と絶縁層12とを備える多層体とすることにより、封止用フィルム100の軟化点における伸び率を比較的容易に150%以上3500%以下に設定することができるが、この伸び率は、150%以上3500%以下であればよいが、150%以上2000%以下であることが好ましく、1000%以上2000%以下であることがより好ましい。これにより、封止用フィルム100を用いて、電子部品搭載基板45が備える凹凸6の被覆に適用した際に、凹凸6の形状に対して優れた追従性をもって封止した状態で被覆することができ、かつ、封止用フィルム100の途中で破断されるのを的確に抑制または防止することができる。 Here, by forming the sealing film 100 as a multilayer body including the electromagnetic wave shielding layer 13 and the insulating layer 12 having the above-described configuration, the elongation at the softening point of the sealing film 100 is relatively easy. Although it can be set to 150% or more and 3500% or less, this elongation may be 150% or more and 3500% or less, but it is preferably 150% or more and 2000% or less, and 1000% or more and 2000% or less. More preferably. As a result, when the sealing film 100 is used to coat the unevenness 6 included in the electronic component mounting substrate 45, it can be covered in a state of being sealed with excellent followability to the shape of the unevenness 6. It is possible to accurately suppress or prevent the sealing film 100 from being broken in the middle.
 また、封止用フィルム100の軟化点における伸び率を前記範囲内とすることにより、基板5に設けられた凹凸6における段差が10mm以上のように大きい段差であったとしても、封止用フィルム100を凹凸6の形状に対応して追従させることができる。 Moreover, even if the level | step difference in the unevenness | corrugation 6 provided in the board | substrate 5 was a big level | step difference as 10 mm or more by making elongation rate in the softening point of the film | membrane 100 for sealing | blocking in the said range, the film | membrane for sealing 100 can be made to follow the shape of the irregularities 6.
 なお、破断伸び(軟化点における伸び率)の測定は、オートグラフ装置(例えば、島津製作所製、AUTOGRAPH AGS-X等)を用いて、JIS K 6251に記載の方法に準拠して測定することができる。 The elongation at break (elongation at the softening point) can be measured according to the method described in JIS K 6251 using an autograph apparatus (for example, AUTOGRAPH AGS-X manufactured by Shimadzu Corporation). it can.
 また、封止用フィルム100の軟化点は、動的粘弾性測定装置(例えば、セイコーインスツル社製、EXSTAR6000等)を用いて、チャック間距離20mm、昇温速度5℃/分および角周波数10Hzの条件で測定し得る。 In addition, the softening point of the sealing film 100 is determined by using a dynamic viscoelasticity measuring apparatus (for example, EXSTAR6000 manufactured by Seiko Instruments Inc.), a distance between chucks of 20 mm, a heating rate of 5 ° C./min, and an angular frequency of 10 Hz. It can be measured under the following conditions.
 さらに、封止用フィルム100の25℃以上80℃以下の温度範囲での線膨張率は、100ppm/K以下であることが好ましく、5ppm/K以上50ppm/K以下であることがより好ましい。封止用フィルム100の25℃以上80℃以下の温度範囲での線膨張率がこのような範囲の値であると、封止用フィルム100の加熱時において、封止用フィルム100は、優れた伸縮性を有するため、封止用フィルム100の凹凸6に対する形状追従性をより確実に向上させることができる。さらに、封止用フィルム100と、基板5、電子部品4と、さらには電極3との間で、優れた密着性を維持することができるため、電子部品搭載基板45の駆動を繰り返すことで生じる発熱に起因する封止用フィルム100の電子部品搭載基板45からの剥離をより的確に抑制または防止することができる。なお、封止用フィルム100の線膨張率は、例えば、動的粘弾性測定装置(例えば、セイコーインスツル社製、EXSTAR6000等)を用いて算出し得る。 Furthermore, the linear expansion coefficient in the temperature range of 25 ° C. or more and 80 ° C. or less of the sealing film 100 is preferably 100 ppm / K or less, and more preferably 5 ppm / K or more and 50 ppm / K or less. When the linear expansion coefficient in the temperature range of 25 ° C. or higher and 80 ° C. or lower of the sealing film 100 is a value in such a range, the sealing film 100 is excellent when the sealing film 100 is heated. Since it has elasticity, the shape followability to the unevenness 6 of the sealing film 100 can be improved more reliably. Furthermore, since excellent adhesiveness can be maintained among the sealing film 100, the substrate 5, the electronic component 4, and further the electrode 3, it is generated by repeatedly driving the electronic component mounting substrate 45. The peeling from the electronic component mounting substrate 45 of the sealing film 100 due to heat generation can be suppressed or prevented more accurately. The linear expansion coefficient of the sealing film 100 can be calculated using, for example, a dynamic viscoelasticity measuring apparatus (for example, EXSTAR6000 manufactured by Seiko Instruments Inc.).
 封止用フィルム100の全体としての平均厚さは、10μm以上700μm以下であることが好ましく、20μm以上400μm以下であることがより好ましい。封止用フィルム100の平均厚さをかかる範囲内に設定することにより、封止用フィルム100の途中において、封止用フィルム100が破断するのを的確に抑制または防止し得るとともに、封止用フィルム100の軟化点における伸び率を150%以上3500%以下の範囲内に確実に設定することができる。 The average thickness of the sealing film 100 as a whole is preferably 10 μm or more and 700 μm or less, and more preferably 20 μm or more and 400 μm or less. By setting the average thickness of the sealing film 100 within this range, the sealing film 100 can be accurately suppressed or prevented from breaking in the middle of the sealing film 100, and for sealing. The elongation at the softening point of the film 100 can be reliably set within a range of 150% to 3500%.
 [電子部品搭載基板の封止方法]
 次に、上述した第1実施形態の封止用フィルムを用いた電子部品搭載基板の封止方法について説明する。
[Method of sealing electronic component mounting board]
Next, a method for sealing an electronic component mounting board using the sealing film of the first embodiment described above will be described.
 本実施形態の電子部品搭載基板の封止方法は、基板5と電子部品4と電極3とを覆うように封止用フィルム100を電子部品搭載基板45上に配置する工程(配置工程)と、封止用フィルム100を加熱し軟化させるとともに、減圧する工程(加熱・減圧工程)と、封止用フィルム100を冷却させるとともに、加圧することで、基板5と電子部品4と電極3を封止用フィルム100で被覆する工程(冷却・加圧工程)とを有する。 The electronic component mounting substrate sealing method of the present embodiment includes a step of placing the sealing film 100 on the electronic component mounting substrate 45 so as to cover the substrate 5, the electronic component 4, and the electrode 3, The sealing film 100 is heated and softened, and the pressure reducing process (heating / depressurizing process) and the sealing film 100 are cooled and pressurized to seal the substrate 5, the electronic component 4, and the electrode 3. And a step (cooling / pressurizing step) of covering with the film 100 for use.
 以下、電子部品搭載基板の封止方法の各工程について、順次説明する。
(配置工程)
 まず、図2(a)に示すように、封止用フィルム100が備える電磁波シールド層13および絶縁層12のうち絶縁層12を、電子部品搭載基板45に対向させた状態で、電子部品搭載基板45が備える基板5と電子部品4と電極3とを覆うように、封止用フィルム100を電子部品搭載基板45上に配置する。
Hereafter, each process of the sealing method of an electronic component mounting substrate is demonstrated sequentially.
(Arrangement process)
First, as shown in FIG. 2 (a), the electronic component mounting board in the state where the insulating layer 12 of the electromagnetic wave shielding layer 13 and the insulating layer 12 included in the sealing film 100 is opposed to the electronic component mounting board 45. The sealing film 100 is disposed on the electronic component mounting substrate 45 so as to cover the substrate 5, the electronic component 4, and the electrode 3 included in the 45.
(加熱・減圧工程)
 次に、図2(b)に示すように、封止用フィルム100を加熱し軟化させるとともに、減圧する。
(Heating and decompression process)
Next, as shown in FIG. 2B, the sealing film 100 is heated and softened, and the pressure is reduced.
 このように、封止用フィルム100を加熱することにより、封止用フィルム100すなわち電磁波シールド層13および絶縁層12が軟化し、その結果、基板5上に電子部品4および電極3を搭載することにより形成された凹凸6の形状に対して、追従し得る状態となる。 Thus, by heating the sealing film 100, the sealing film 100, that is, the electromagnetic wave shielding layer 13 and the insulating layer 12 are softened. As a result, the electronic component 4 and the electrode 3 are mounted on the substrate 5. It will be in the state which can follow the shape of the unevenness | corrugation 6 formed by (1).
 また、この際、電子部品搭載基板45および封止用フィルム100を、減圧雰囲気下に配置することで、封止用フィルム100の上側ばかりでなく、電子部品搭載基板45と封止用フィルム100との間の気体(空気)が脱気される。 At this time, the electronic component mounting substrate 45 and the sealing film 100 are arranged in a reduced-pressure atmosphere, so that not only the upper side of the sealing film 100 but also the electronic component mounting substrate 45 and the sealing film 100 The gas (air) in between is degassed.
 これにより、封止用フィルム100が伸展しながら、凹凸6の形状、すなわち、基板5上の電子部品4および電極3の形状に若干追従した状態となる。 Thereby, while the sealing film 100 extends, the shape of the irregularities 6, that is, the shape of the electronic component 4 and the electrode 3 on the substrate 5 is slightly followed.
 本工程により、電子部品搭載基板45に形成された凹凸6の形状に対して、封止用フィルム100を、追従し得る状態とすることができる。 By this step, the sealing film 100 can be made to follow the shape of the unevenness 6 formed on the electronic component mounting substrate 45.
 なお、封止用フィルム100の加熱と、雰囲気の減圧とは、加熱の後に減圧してもよく、減圧の後に加熱してもよいが、加熱と減圧とをほぼ同時に行うことが好ましい。これにより、軟化した封止用フィルム100を、凹凸6の形状に確実に若干追従した状態とすることができる。 The heating of the sealing film 100 and the reduced pressure of the atmosphere may be reduced after the heating or may be heated after the reduced pressure, but it is preferable to perform the heating and the reduced pressure almost simultaneously. Thereby, the softened film 100 for sealing can be made into the state which followed the shape of the unevenness | corrugation 6 a little reliably.
(冷却・加圧工程)
 次に、図2(c)に示すように、封止用フィルム100を冷却させるとともに、加圧する。
(Cooling / pressurization process)
Next, as shown in FIG. 2C, the sealing film 100 is cooled and pressurized.
 このように、減圧された雰囲気から加圧することで、前記加熱・減圧工程において、電子部品搭載基板45と封止用フィルム100との間が脱気され、減圧状態が維持されていることから、封止用フィルム100がさらに伸展することとなり、その結果、凹凸6の形状(電子部品4および電極3の形状)に優れた密着度(気密度)で追従した状態で、軟化した状態の封止用フィルム100により、基板5と電子部品4と電極3とが被覆される。なお、前記加熱減圧工程において、凹凸6の形状に対応して封止用フィルム100が十分追従していれば、加圧工程を省略することができる。 Thus, by pressurizing from the decompressed atmosphere, in the heating and decompression step, the space between the electronic component mounting substrate 45 and the sealing film 100 is degassed, and the decompressed state is maintained. As a result, the sealing film 100 is further extended. As a result, the sealing film 100 is softened in a state in which the shape of the unevenness 6 (the shape of the electronic component 4 and the electrode 3) follows with an excellent degree of adhesion (air density). The substrate 5, the electronic component 4, and the electrode 3 are covered with the film 100 for use. In the heating and depressurizing step, the pressing step can be omitted if the sealing film 100 sufficiently follows the shape of the irregularities 6.
 この際、本発明では、封止用フィルム100の軟化点における伸び率が150%以上3500%以下となっている。そのため、封止用フィルム100は、この加圧時に、電子部品搭載基板45に形成された凹凸6に対してより優れた形状追従性をもって伸展させることができるため、軟化した状態の封止用フィルム100により、基板5と電子部品4とを優れた密着性をもって被覆することができる。 At this time, in the present invention, the elongation at the softening point of the sealing film 100 is 150% or more and 3500% or less. Therefore, since the sealing film 100 can be extended with better shape followability with respect to the unevenness 6 formed on the electronic component mounting substrate 45 during this pressurization, the sealing film in a softened state By 100, the board | substrate 5 and the electronic component 4 can be coat | covered with the outstanding adhesiveness.
 そして、封止用フィルム100により、基板5と電子部品4とを、優れた密着性(気密性)をもって被覆した状態で、封止用フィルム100を冷却することで、この状態を維持したまま、封止用フィルム100が固化する。 And in the state which coat | covered the board | substrate 5 and the electronic component 4 with the outstanding adhesiveness (airtightness) with the film 100 for sealing, by cooling the film 100 for sealing, this state is maintained, The sealing film 100 is solidified.
 これにより、電子部品搭載基板45に形成された凹凸6の形状に追従した状態で、封止用フィルム100により、基板5と電子部品4と電極3とが被覆された封止用フィルム被覆電子部品搭載基板50が得られる。そのため、この封止用フィルム被覆電子部品搭載基板50において、湿気や埃等の外部因子と電子部品4および電極3が接触するのを的確に抑制または防止することができる。したがって、得られる封止用フィルム被覆電子部品搭載基板50ひいてはこの封止用フィルム被覆電子部品搭載基板50を備える電子機器の信頼性の向上が図られる。 Thus, the sealing film-covered electronic component in which the substrate 5, the electronic component 4, and the electrode 3 are covered with the sealing film 100 while following the shape of the unevenness 6 formed on the electronic component mounting substrate 45. A mounting substrate 50 is obtained. Therefore, in this film-covered electronic component mounting substrate 50 for sealing, it is possible to accurately suppress or prevent the external component such as moisture and dust from contacting the electronic component 4 and the electrode 3. Accordingly, the reliability of the obtained electronic device including the sealing film-covered electronic component mounting substrate 50 and thus the sealing film-covered electronic component mounting substrate 50 can be improved.
 また、上記のような電子部品搭載基板45の被覆に用いられる封止用フィルム100は、絶縁層12と電磁波シールド層13との積層体で構成されるが、電磁波シールド層13は、絶縁層12よりも大きく形成され、その中央部において絶縁層12が積層されるが、端部において、絶縁層12の端部を越えて突出することで形成された突出部15を備えている。 In addition, the sealing film 100 used for covering the electronic component mounting substrate 45 as described above is composed of a laminate of the insulating layer 12 and the electromagnetic wave shielding layer 13, and the electromagnetic wave shielding layer 13 is composed of the insulating layer 12. The insulating layer 12 is formed at a central portion of the insulating layer 12. The protruding portion 15 is formed at the end portion so as to protrude beyond the end portion of the insulating layer 12.
 そのため、本工程において、電磁波シールド層13の中央部では、絶縁層12を介して、電子部品4が被覆される。したがって、得られる封止用フィルム被覆電子部品搭載基板50では、電子部品4への電磁波によるノイズの影響を的確に抑制または防止することができる。 Therefore, in this step, the electronic component 4 is covered with the insulating layer 12 in the central portion of the electromagnetic wave shielding layer 13. Therefore, in the obtained film-covered electronic component mounting substrate 50 for sealing, the influence of noise due to electromagnetic waves on the electronic component 4 can be accurately suppressed or prevented.
 さらに、電磁波シールド層13の端部では、絶縁層12が介在することなく、導電性を有する突出部15が電極3を直接被覆することで、電極3が突出部15(電磁波シールド層13)に電気的に接続される。そのため、得られる封止用フィルム被覆電子部品搭載基板50において、この突出部15を介した電極3と外部との電気的な接続を確保することが可能となる。 Further, at the end portion of the electromagnetic wave shielding layer 13, the insulating projecting portion 15 directly covers the electrode 3 without the insulating layer 12, so that the electrode 3 becomes the projecting portion 15 (the electromagnetic shielding layer 13). Electrically connected. Therefore, in the obtained film-covered electronic component mounting substrate 50 for sealing, it is possible to ensure electrical connection between the electrode 3 and the outside via the protruding portion 15.
 なお、封止用フィルム100の冷却と、雰囲気の加圧とは、加圧の後に冷却してもよいが、冷却と加圧とをほぼ同時に行うことが好ましい。これにより、凹凸6の形状に対応して、封止用フィルム100をより優れた密着性をもって被覆させることができる。 In addition, although cooling of the film 100 for sealing and pressurization of an atmosphere may be cooled after pressurization, it is preferable to perform cooling and pressurization substantially simultaneously. Thereby, the film 100 for sealing can be coat | covered with the more excellent adhesiveness corresponding to the shape of the unevenness | corrugation 6. FIG.
 上記の工程を経ることで、封止用フィルム100により、基板5と電子部品4とが被覆された封止用フィルム被覆電子部品搭載基板50を得ることができる。
 <第2実施形態>
 [封止用フィルム]
 次に、本発明の封止用フィルム100の第2実施形態について説明する。
By passing through said process, the sealing film covering electronic component mounting board | substrate 50 with which the board | substrate 5 and the electronic component 4 were coat | covered with the film 100 for sealing can be obtained.
Second Embodiment
[Sealing film]
Next, 2nd Embodiment of the film 100 for sealing of this invention is described.
 図3は、本発明の封止用フィルムの第2実施形態を示す縦断面図、図4(a)~(c)は、図3に示す封止用フィルムを用いて電子部品搭載基板の封止方法を説明するための縦断面図である。なお、以下の説明では、説明の便宜上、図3、図4(a)~(c)中の上側を「上」、下側を「下」と言う。 FIG. 3 is a longitudinal sectional view showing a second embodiment of the sealing film of the present invention, and FIGS. 4 (a) to 4 (c) show the sealing of the electronic component mounting substrate using the sealing film shown in FIG. It is a longitudinal cross-sectional view for demonstrating the stopping method. In the following description, for convenience of description, the upper side in FIGS. 3 and 4A to 4C is referred to as “upper” and the lower side is referred to as “lower”.
 以下、第2実施形態について説明するが、前記第1実施形態と異なる点を中心に説明し、同様の事項についてはその説明を省略する。 Hereinafter, the second embodiment will be described, but the description will focus on the differences from the first embodiment, and the description of the same matters will be omitted.
 第2実施形態では、封止用フィルム100が、図3、図4に示すように、電磁波シールド層13の絶縁層12と反対側に積層された被覆層14をさらに備えており、それ以外は、前記第1実施形態と同様である。すなわち、本実施形態の封止用フィルム100では、絶縁層12と、電磁波シールド層13と、被覆層14とが、被覆すべき電子部品搭載基板45側から、この順で、積層されている。また、本実施形態の封止用フィルム100は、図4に示すように、絶縁層12、電磁波シールド層13および被覆層14が、それぞれ、略同じ大きさを有している。 In 2nd Embodiment, the film 100 for sealing is further provided with the coating layer 14 laminated | stacked on the opposite side to the insulating layer 12 of the electromagnetic wave shield layer 13, as shown in FIG. 3, FIG. The same as in the first embodiment. That is, in the sealing film 100 of this embodiment, the insulating layer 12, the electromagnetic wave shielding layer 13, and the coating layer 14 are laminated in this order from the electronic component mounting substrate 45 side to be coated. In the sealing film 100 of the present embodiment, as shown in FIG. 4, the insulating layer 12, the electromagnetic wave shielding layer 13, and the coating layer 14 have substantially the same size.
 ここで、封止用フィルム100により被覆される電子部品搭載基板45は、本実施形態では、図4に示すように、基板5と、基板5の上面(一方の面)側の中央部に搭載(載置)された電子部品4とを備えている。このような電子部品搭載基板45において、基板5の上面への電子部品4の搭載により、基板5上に凸部61と凹部62とからなる凹凸6が形成される。なお、基板5としては、例えば、プリント配線基板が挙げられ、基板5上に搭載する電子部品4としては、例えば、半導体素子、コンデンサー、コイル、コネクターおよび抵抗等が挙げられる。 Here, in this embodiment, the electronic component mounting substrate 45 covered with the sealing film 100 is mounted on the substrate 5 and the central portion on the upper surface (one surface) side of the substrate 5 as shown in FIG. The electronic component 4 is placed (placed). In such an electronic component mounting substrate 45, the mounting of the electronic component 4 on the upper surface of the substrate 5 forms the unevenness 6 including the convex portions 61 and the concave portions 62 on the substrate 5. Examples of the substrate 5 include a printed wiring board, and examples of the electronic component 4 mounted on the substrate 5 include a semiconductor element, a capacitor, a coil, a connector, and a resistor.
 このように電子部品4が上面側に搭載された電子部品搭載基板45に対して、絶縁層12を下側とし、被覆層14を上側にして、封止用フィルム100を用いて被覆すると、電子部品4は、絶縁層12を介して電磁波シールド層13で封止される。そのため、得られた封止用フィルム被覆電子部品搭載基板50は、電子部品4への電磁波によるノイズの影響が的確に抑制または防止されたものとなる。 When the electronic component mounting substrate 45 on which the electronic component 4 is mounted on the upper surface is coated with the sealing film 100 with the insulating layer 12 on the lower side and the coating layer 14 on the upper side, The component 4 is sealed with the electromagnetic wave shielding layer 13 through the insulating layer 12. Therefore, in the obtained film-covered electronic component mounting substrate 50 for sealing, the influence of noise due to electromagnetic waves on the electronic component 4 is accurately suppressed or prevented.
 また、電子部品4は、絶縁層12を介して電磁波シールド層13により封止されていることから、電磁波シールド層13は、この電子部品4に対する絶縁性が確保されたものとなる。さらに、電磁波シールド層13は、電子部品4の反対側の面において、被覆層14により被覆されている。そのため、電磁波シールド層13は、得られた封止用フィルム被覆電子部品搭載基板50の外側に位置する他の電子部品に対しても、絶縁性が確保されたものとなる。 Further, since the electronic component 4 is sealed by the electromagnetic wave shielding layer 13 through the insulating layer 12, the electromagnetic wave shielding layer 13 is ensured to be insulated from the electronic component 4. Further, the electromagnetic wave shielding layer 13 is covered with a covering layer 14 on the surface opposite to the electronic component 4. For this reason, the electromagnetic wave shielding layer 13 is also provided with insulation against other electronic components located outside the obtained sealing film-covered electronic component mounting substrate 50.
 また、このような封止用フィルム100の被覆層14は、前述した絶縁層12および電磁波シールド層13と同様に、樹脂材料を含有している。また、前述した第1実施形態と同様に、封止用フィルム100のJIS K 6251に準拠して求められる軟化点における伸び率が150%以上3500%以下であるが、150%以上2000%以下であることが好ましく、1000%以上2000%以下であることがより好ましい。 Further, the covering layer 14 of such a sealing film 100 contains a resin material in the same manner as the insulating layer 12 and the electromagnetic wave shielding layer 13 described above. Further, as in the first embodiment described above, the elongation at the softening point of the sealing film 100 determined in accordance with JIS K 6251 is 150% or more and 3500% or less, but 150% or more and 2000% or less. It is preferable that it is 1000% or more and 2000% or less.
 封止用フィルム100の軟化点がかかる範囲内であることにより、封止用フィルム100を用いて、電子部品搭載基板45が備える凹凸6の被覆に適用した際に、凹凸6の形状に対して優れた追従性をもって封止した状態で被覆することができる。そのため、この封止用フィルム100を被覆することで得られる封止用フィルム被覆電子部品搭載基板50において、基板5上の電子部品4が湿気や埃等の外部因子と接触するのを的確に抑制または防止することができる。したがって、得られる封止用フィルム被覆電子部品搭載基板50ひいてはこの封止用フィルム被覆電子部品搭載基板50を備える電子機器の信頼性の向上が図られる。 When the softening point of the sealing film 100 is within such a range, when the sealing film 100 is used to cover the unevenness 6 included in the electronic component mounting substrate 45, the shape of the unevenness 6 is reduced. It can coat | cover in the state sealed with the outstanding followable | trackability. Therefore, in the sealing film-covered electronic component mounting substrate 50 obtained by covering the sealing film 100, the electronic component 4 on the substrate 5 is accurately prevented from coming into contact with external factors such as moisture and dust. Or it can be prevented. Accordingly, the reliability of the obtained electronic device including the sealing film-covered electronic component mounting substrate 50 and thus the sealing film-covered electronic component mounting substrate 50 can be improved.
 また、封止用フィルム100の軟化点における伸び率を前記範囲内とすることにより、基板5に設けられた凹凸6における段差が具体的な大きさとして、10mm以上のように大きいものであったとしても、封止用フィルム100を凹凸6の形状に対応して追従させることができる。 In addition, by setting the elongation at the softening point of the sealing film 100 within the above range, the step in the unevenness 6 provided on the substrate 5 was as large as 10 mm or more as a specific size. Even so, the sealing film 100 can be made to follow the shape of the irregularities 6.
 前記軟化点における伸び率が150%以上3500%以下となっている封止用フィルム100が備える被覆層14は、前述した絶縁層12および電磁波シールド層13と同様に、樹脂材料を含有している。かかる樹脂材料としては、前述した絶縁層12および電磁波シールド層13と同様の樹脂材料を用いることができる。なお、絶縁層12、電磁波シールド層13および被覆層14に、それぞれ含まれる樹脂材料は、封止用フィルム100の軟化点における伸び率を150%以上3500%以下に設定し得るものであれば、同一であってもよいし、異なっても良い。 The covering layer 14 included in the sealing film 100 having an elongation at the softening point of 150% or more and 3500% or less contains a resin material, like the insulating layer 12 and the electromagnetic wave shielding layer 13 described above. . As such a resin material, the same resin material as the insulating layer 12 and the electromagnetic wave shielding layer 13 described above can be used. In addition, if the resin material contained in each of the insulating layer 12, the electromagnetic wave shielding layer 13, and the coating layer 14 can set the elongation at the softening point of the sealing film 100 to 150% or more and 3500% or less, It may be the same or different.
 また、封止用フィルム100の前記軟化点における伸び率を前記範囲内とするために、上述のような樹脂材料を含有する絶縁層12、電磁波シールド層13および被覆層14のうち、絶縁層12および被覆層14は、前記樹脂材料を主材料として含有する層で構成され、電磁波シールド層13は、前記樹脂材料と、前記導電性を備える導電性粒子とを含有する層で構成される。絶縁層12、電磁波シールド層13および被覆層14をかかる構成とすることで、絶縁層12および被覆層14が、絶縁性を有し、電磁波シールド層13が、導電性および電磁波シールド性の双方を有する。 Moreover, in order to make elongation rate in the said softening point of the film 100 for sealing into the said range, the insulating layer 12 among the insulating layers 12, the electromagnetic wave shield layer 13, and the coating layer 14 containing the above resin materials. And the coating layer 14 is comprised by the layer which contains the said resin material as a main material, and the electromagnetic wave shield layer 13 is comprised by the layer containing the said resin material and the electroconductive particle provided with the said electroconductivity. By having the insulating layer 12, the electromagnetic wave shielding layer 13 and the covering layer 14 in this configuration, the insulating layer 12 and the covering layer 14 have insulating properties, and the electromagnetic wave shielding layer 13 has both conductivity and electromagnetic wave shielding properties. Have.
 上記のような構成をなす、何れも樹脂材料を含有する絶縁層12、電磁波シールド層13および被覆層14を備える封止用フィルム100は、前述した樹脂材料のうちポリオレフィン系樹脂を前記樹脂材料として含有する層を、絶縁層12、電磁波シールド層13および被覆層14のうちの少なくとも1層として備えることが好ましい。これにより、封止用フィルム100の軟化点における伸び率をより確実に150%以上3500%以下に設定することができる。 The sealing film 100 including the insulating layer 12, the electromagnetic wave shielding layer 13, and the covering layer 14 each including the resin material having the above-described configuration includes a polyolefin resin as the resin material among the resin materials described above. The layer to be contained is preferably provided as at least one of the insulating layer 12, the electromagnetic wave shielding layer 13, and the coating layer. Thereby, the elongation at the softening point of the sealing film 100 can be set to 150% or more and 3500% or less more reliably.
 そこで、以下では、絶縁層12および被覆層14に含まれる樹脂材料がともにポリオレフィン系樹脂である封止用フィルム100を、一例として説明する。 Therefore, hereinafter, the sealing film 100 in which the resin materials included in the insulating layer 12 and the covering layer 14 are both polyolefin-based resins will be described as an example.
 被覆層14は、封止用フィルム100の軟化点における伸び率を150%以上3500%以下に設定して、凹凸6への密着性および形状追従性に優れたものとすることを目的に、本実施形態では、ポリオレフィン系樹脂(エチレン共重合体)としてのエチレン-酢酸ビニル共重合体を主材料として含有する層である。 For the purpose of the coating layer 14, the elongation at the softening point of the sealing film 100 is set to 150% or more and 3500% or less, and the coating layer 14 is excellent in adhesion to the unevenness 6 and shape followability. In the embodiment, the layer contains an ethylene-vinyl acetate copolymer as a polyolefin resin (ethylene copolymer) as a main material.
 また、被覆層14は、樹脂材料としてエチレン-酢酸ビニル共重合体を主材料として含有することで、絶縁性を備える層であり、電子部品搭載基板45を封止用フィルム100で被覆する際に、導電性を有する電磁波シールド層13の電子部品4と反対の面側を被覆することで、電子部品搭載基板45の外側に位置する他の電子部品に対する絶縁性を確保するための層として機能する。 The coating layer 14 is a layer having an insulating property by containing an ethylene-vinyl acetate copolymer as a resin material as a main material. When the electronic component mounting substrate 45 is covered with the sealing film 100, By covering the surface of the electromagnetic shielding layer 13 having conductivity opposite to the electronic component 4, it functions as a layer for ensuring insulation against other electronic components located outside the electronic component mounting substrate 45. .
 このエチレン-酢酸ビニル共重合体としては、共重合されるVA含有量は、前述した絶縁層12で示した共重合されるVA含有量と同様の範囲内に設定される In this ethylene-vinyl acetate copolymer, the VA content to be copolymerized is set within the same range as the VA content to be copolymerized shown in the insulating layer 12 described above.
 また、被覆層14の平均厚さは、5μm以上200μm以下であることが好ましく、20μm以上120μm以下であることがより好ましい。被覆層14の平均厚さをかかる範囲内に設定することにより、封止用フィルム100の軟化点における伸び率を150%以上3500%以下の範囲内により確実に設定することができる。また、封止用フィルム被覆電子部品搭載基板50の外側に位置する電子部品に対する電磁波シールド層13の絶縁性をより確実に確保することができる。 The average thickness of the coating layer 14 is preferably 5 μm or more and 200 μm or less, and more preferably 20 μm or more and 120 μm or less. By setting the average thickness of the covering layer 14 within such a range, the elongation at the softening point of the sealing film 100 can be reliably set within a range of 150% or more and 3500% or less. Moreover, the insulation of the electromagnetic wave shielding layer 13 with respect to the electronic component located outside the sealing film-covered electronic component mounting substrate 50 can be more reliably ensured.
 なお、被覆層14に含まれる樹脂材料としては、絶縁層12と同様に、ポリオレフィン系樹脂(エチレン共重合体)としてのエチレン-酢酸ビニル共重合体の他、前述した電磁波シールド層13に含まれるアイオノマー樹脂であってもよいし、エチレン-酢酸ビニル共重合体以外のポリオレフィン系樹脂であってもよい。 The resin material contained in the coating layer 14 is contained in the electromagnetic wave shielding layer 13 as well as the ethylene-vinyl acetate copolymer as a polyolefin resin (ethylene copolymer), as in the case of the insulating layer 12. It may be an ionomer resin or a polyolefin resin other than an ethylene-vinyl acetate copolymer.
 また、封止用フィルム100では、絶縁層12と電磁波シールド層13との間、および、電磁波シールド層13と被覆層14との間には、接着性を付与したり、あるいは接着性を高めるために必要に応じて接着層を設けるようにすることもできる。また、絶縁層12と電子部品搭載基板45との間の接着性を高めるために、必要に応じて絶縁層12の内側、すなわち絶縁層12と基板5との間に、前述した第1実施形態と同様の接着層を設けることもできる。 Moreover, in the sealing film 100, in order to provide adhesiveness between the insulating layer 12 and the electromagnetic wave shielding layer 13, and between the electromagnetic wave shielding layer 13 and the coating layer 14, or to improve adhesiveness. If necessary, an adhesive layer may be provided. Further, in order to improve the adhesion between the insulating layer 12 and the electronic component mounting substrate 45, the first embodiment described above may be provided inside the insulating layer 12, that is, between the insulating layer 12 and the substrate 5, as necessary. It is also possible to provide an adhesive layer similar to the above.
 さらに、絶縁層12と電磁波シールド層13と被覆層14とが積層された封止用フィルム100を製造する製造方法については、特に限定されず、例えば、公知の共押出法、ドライラミネート法、押出ラミ法、塗工積層等を用いて、成膜および積層を行うことにより得ることができる。 Furthermore, a manufacturing method for manufacturing the sealing film 100 in which the insulating layer 12, the electromagnetic wave shielding layer 13, and the coating layer 14 are laminated is not particularly limited. For example, a known coextrusion method, dry lamination method, extrusion It can be obtained by film formation and lamination using a lamination method, coating lamination, or the like.
 ここで、封止用フィルム100を、上記のような構成の絶縁層12と電磁波シールド層13と被覆層14とを備える多層体とすることにより、封止用フィルム100の軟化点における伸び率を比較的容易に150%以上3500%以下に設定することができる。 Here, by forming the sealing film 100 as a multilayer body including the insulating layer 12, the electromagnetic wave shielding layer 13, and the coating layer 14 having the above-described configuration, the elongation at the softening point of the sealing film 100 can be increased. It can be set to 150% or more and 3500% or less relatively easily.
 さらに、前記第1実施形態と同様に、封止用フィルム100の25℃以上80℃以下の温度範囲での線膨張率は、100ppm/K以下であることが好ましい。このように、封止用フィルム100の線膨張率を規定することによっても、封止用フィルム100の加熱時において、封止用フィルム100は、優れた伸縮性を有するものとなるため、封止用フィルム100の凹凸6に対する形状追従性をより確実に向上させることができる。さらに、封止用フィルム100と、基板5さらには電子部品4との間で、優れた密着性を維持することができるため、電子部品搭載基板45の駆動を繰り返すことで生じる発熱に起因する封止用フィルム100の電子部品搭載基板45からの剥離をより的確に抑制または防止することができる。 Furthermore, as in the first embodiment, the linear expansion coefficient in the temperature range of 25 ° C. to 80 ° C. of the sealing film 100 is preferably 100 ppm / K or less. Thus, also by prescribing the linear expansion coefficient of the sealing film 100, the sealing film 100 has excellent stretchability when the sealing film 100 is heated. The shape followability to the unevenness 6 of the film 100 can be improved more reliably. Furthermore, since excellent adhesion can be maintained between the sealing film 100 and the substrate 5 and further the electronic component 4, the sealing caused by the heat generated by repeatedly driving the electronic component mounting substrate 45 is achieved. The peeling from the electronic component mounting substrate 45 of the stop film 100 can be suppressed or prevented more accurately.
 封止用フィルム100の全体としての平均厚さは、10μm以上700μm以下であることが好ましく、20μm以上400μm以下であることがより好ましい。封止用フィルム100の平均厚さをかかる範囲内に設定することにより、封止用フィルム100の途中において、封止用フィルム100が破断するのを的確に抑制または防止し得るとともに、封止用フィルム100の軟化点における伸び率を150%以上3500%以下の範囲内に確実に設定することができる。 The average thickness of the sealing film 100 as a whole is preferably 10 μm or more and 700 μm or less, and more preferably 20 μm or more and 400 μm or less. By setting the average thickness of the sealing film 100 within this range, the sealing film 100 can be accurately suppressed or prevented from breaking in the middle of the sealing film 100, and for sealing. The elongation at the softening point of the film 100 can be reliably set within a range of 150% to 3500%.
 [電子部品搭載基板の封止方法]
 次に、上述した第2実施形態の封止用フィルムを用いた電子部品搭載基板の封止方法について説明する。
[Method of sealing electronic component mounting board]
Next, a method for sealing an electronic component mounting board using the sealing film of the second embodiment described above will be described.
 本実施形態の電子部品搭載基板の封止方法は、基板5と電子部品4とを覆うように、絶縁層12を電子部品搭載基板45側にして封止用フィルム100を電子部品搭載基板45上に配置する配置工程と、封止用フィルム100を加熱し軟化させるとともに、減圧する加熱・減圧工程と、封止用フィルム100を冷却させるとともに、加圧することで、基板5と電子部品4とを封止用フィルム100で封止する冷却・加圧工程とを有する。 The electronic component mounting substrate sealing method of this embodiment is such that the sealing film 100 is placed on the electronic component mounting substrate 45 with the insulating layer 12 facing the electronic component mounting substrate 45 so as to cover the substrate 5 and the electronic component 4. And placing the substrate 5 and the electronic component 4 together by heating and softening the sealing film 100, heating and decompressing the sealing film 100, and cooling and pressurizing the sealing film 100. And a cooling / pressurizing step of sealing with the sealing film 100.
 以下、電子部品搭載基板の封止方法の各工程について、順次説明する。
(配置工程)
 まず、図4(a)に示すように、封止用フィルム100が備える絶縁層12、電磁波シールド層13および被覆層14のうち絶縁層12を、電子部品搭載基板45に対向させた状態で、電子部品搭載基板45が備える基板5と電子部品4とを覆うように、封止用フィルム100を電子部品搭載基板45上に配置する(図4(b))。
Hereafter, each process of the sealing method of an electronic component mounting substrate is demonstrated sequentially.
(Arrangement process)
First, as shown in FIG. 4A, in the state where the insulating layer 12 of the insulating film 12, the electromagnetic wave shielding layer 13 and the covering layer 14 included in the sealing film 100 is opposed to the electronic component mounting substrate 45. The sealing film 100 is disposed on the electronic component mounting substrate 45 so as to cover the substrate 5 and the electronic component 4 included in the electronic component mounting substrate 45 (FIG. 4B).
(加熱・減圧工程)
 次に、図4(b)に示す状態を維持したまま、封止用フィルム100を加熱し軟化させるとともに、減圧する。
(Heating and decompression process)
Next, the sealing film 100 is heated and softened while maintaining the state shown in FIG.
 このように、封止用フィルム100を加熱することにより、封止用フィルム100すなわち絶縁層12、電磁波シールド層13および被覆層14が軟化し、その結果、基板5の上面側では、基板5に電子部品4を搭載することにより形成された凹凸6の形状に対して、追従し得る状態となる。 Thus, by heating the sealing film 100, the sealing film 100, that is, the insulating layer 12, the electromagnetic wave shielding layer 13, and the coating layer 14 are softened. As a result, on the upper surface side of the substrate 5, It will be in the state which can follow the shape of the unevenness | corrugation 6 formed by mounting the electronic component 4. FIG.
 また、この際、電子部品搭載基板45および封止用フィルム100を、減圧雰囲気下に配置することで、封止用フィルム100の外側ばかりでなく、電子部品搭載基板45と封止用フィルム100との間の気体(空気)が脱気される。 At this time, the electronic component mounting substrate 45 and the sealing film 100 are arranged in a reduced-pressure atmosphere, so that not only the outside of the sealing film 100 but also the electronic component mounting substrate 45 and the sealing film 100 The gas (air) in between is degassed.
 これにより、封止用フィルム100が伸展しながら、基板5の上側では、凹凸6の形状、すなわち、基板5上の電子部品4の形状に若干追従した状態となる。 Thus, while the sealing film 100 is extended, the shape of the unevenness 6, that is, the shape of the electronic component 4 on the substrate 5 is slightly followed on the upper side of the substrate 5.
 本工程により、電子部品搭載基板45の上面側に形成された凹凸6の形状に対して、封止用フィルム100を、追従し得る状態とすることができる。 By this step, the sealing film 100 can be made to follow the shape of the irregularities 6 formed on the upper surface side of the electronic component mounting substrate 45.
 なお、封止用フィルム100の加熱と、雰囲気の減圧とは、加熱の後に減圧してもよく、減圧の後に加熱してもよいが、加熱と減圧とをほぼ同時に行うことが好ましい。これにより、軟化した封止用フィルム100を、凹凸6の形状に確実に若干追従した状態とすることができる。 The heating of the sealing film 100 and the reduced pressure of the atmosphere may be reduced after the heating or may be heated after the reduced pressure, but it is preferable to perform the heating and the reduced pressure almost simultaneously. Thereby, the softened film 100 for sealing can be made into the state which followed the shape of the unevenness | corrugation 6 a little reliably.
(冷却・加圧工程)
 次に、図4(c)に示すように、封止用フィルム100を冷却させるとともに、加圧する。
(Cooling / pressurization process)
Next, as shown in FIG. 4C, the sealing film 100 is cooled and pressurized.
 このように、減圧された雰囲気から加圧することで、前記加熱・減圧工程において、電子部品搭載基板45と封止用フィルム100との間が脱気され、減圧状態が維持されていることから、封止用フィルム100がさらに伸展することとなる。 Thus, by pressurizing from the decompressed atmosphere, in the heating and decompression step, the space between the electronic component mounting substrate 45 and the sealing film 100 is degassed, and the decompressed state is maintained. The sealing film 100 is further extended.
 その結果、基板5の上側では凹凸6の形状(電子部品4の形状)に優れた密着度(気密度)で追従した状態で、軟化した状態の封止用フィルム100により、基板5と電子部品4とが被覆される。 As a result, on the upper side of the substrate 5, the substrate 5 and the electronic component are formed by the softened sealing film 100 in a state in which the shape of the unevenness 6 (the shape of the electronic component 4) follows with an excellent degree of adhesion (density). 4 are coated.
 なお、前記加熱減圧工程において、凹凸6の形状に対応して封止用フィルム100が十分追従していれば、加圧工程を省略することができる。 In the heating and decompression step, if the sealing film 100 sufficiently follows the shape of the irregularities 6, the pressing step can be omitted.
 この際、封止用フィルム100の軟化点における伸び率が150%以上3500%以下となっている。そのため、封止用フィルム100は、この加圧時に、電子部品搭載基板45に形成された凹凸6に対してより優れた形状追従性をもって伸展させることができる。そのため、軟化した状態の封止用フィルム100により、基板5の上側において基板5と電子部品4とを優れた密着性をもって被覆することができる。 At this time, the elongation at the softening point of the sealing film 100 is 150% or more and 3500% or less. Therefore, the sealing film 100 can be extended with better shape followability to the unevenness 6 formed on the electronic component mounting substrate 45 at the time of pressurization. Therefore, the substrate 5 and the electronic component 4 can be coated on the upper side of the substrate 5 with excellent adhesion by the softened sealing film 100.
 そして、封止用フィルム100により、基板5と電子部品4とを優れた密着性(気密性)をもって被覆した状態で、封止用フィルム100を冷却することで、この状態を維持したまま、封止用フィルム100が固化する。 Then, the sealing film 100 is cooled in a state where the substrate 5 and the electronic component 4 are coated with excellent adhesion (airtightness) by the sealing film 100, and the sealing film 100 is maintained while maintaining this state. The stop film 100 is solidified.
 これにより、電子部品搭載基板45に形成された凹凸6の形状に追従した状態で、封止用フィルム100により、基板5の上側において絶縁層12が接触した状態で基板5と電子部品4とが被覆された封止用フィルム被覆電子部品搭載基板50が得られることとなる。そのため、この封止用フィルム被覆電子部品搭載基板50において、湿気や埃等の外部因子と電子部品4が接触するのを的確に抑制または防止することができる。したがって、得られる封止用フィルム被覆電子部品搭載基板50ひいてはこの封止用フィルム被覆電子部品搭載基板50を備える電子機器の信頼性の向上が図られる。 Thereby, the substrate 5 and the electronic component 4 are in contact with the insulating layer 12 on the upper side of the substrate 5 by the sealing film 100 while following the shape of the unevenness 6 formed on the electronic component mounting substrate 45. The coated sealing film-covered electronic component mounting substrate 50 is obtained. Therefore, in the sealing film-covered electronic component mounting substrate 50, it is possible to accurately suppress or prevent the electronic component 4 from coming into contact with external factors such as moisture and dust. Accordingly, the reliability of the obtained electronic device including the sealing film-covered electronic component mounting substrate 50 and thus the sealing film-covered electronic component mounting substrate 50 can be improved.
 また、上記のような電子部品搭載基板45の被覆に用いられる封止用フィルム100は、絶縁層12と電磁波シールド層13と被覆層14との積層体で構成される。 Further, the sealing film 100 used for covering the electronic component mounting substrate 45 as described above is composed of a laminate of the insulating layer 12, the electromagnetic wave shielding layer 13, and the covering layer 14.
 そのため、本工程において、絶縁層12を介して、電子部品4が電磁波シールド層13により被覆される。したがって、得られる封止用フィルム被覆電子部品搭載基板50を、電子部品4への電磁波によるノイズの影響が的確に抑制または防止されたものとすることができる。 Therefore, in this step, the electronic component 4 is covered with the electromagnetic wave shielding layer 13 through the insulating layer 12. Therefore, the obtained film-covered electronic component mounting substrate 50 for sealing can be one in which the influence of noise due to electromagnetic waves on the electronic component 4 is appropriately suppressed or prevented.
 さらに、電子部品4は、絶縁層12を介して電磁波シールド層13により封止されることから、電磁波シールド層13は、この電子部品4に対する絶縁性を確保した状態で、電子部品4を被覆することができる。また、電磁波シールド層13は、電子部品4の反対側の面において、被覆層14により被覆されていることから、電磁波シールド層13は、得られる封止用フィルム被覆電子部品搭載基板50の外側に位置する他の電子部品に対しても、絶縁性が確保された状態で電子部品搭載基板45を被覆することができる。 Furthermore, since the electronic component 4 is sealed by the electromagnetic wave shielding layer 13 through the insulating layer 12, the electromagnetic wave shielding layer 13 covers the electronic component 4 in a state in which insulation against the electronic component 4 is ensured. be able to. Moreover, since the electromagnetic wave shielding layer 13 is covered with the coating layer 14 on the surface opposite to the electronic component 4, the electromagnetic wave shielding layer 13 is disposed outside the obtained film-covered electronic component mounting substrate 50 for sealing. The electronic component mounting substrate 45 can be covered with insulation of other electronic components that are positioned.
 なお、封止用フィルム100の冷却と、雰囲気の加圧とは、加圧の後に冷却してもよいが、冷却と加圧とをほぼ同時に行うことが好ましい。これにより、凹凸6の形状に対応して、封止用フィルム100をより優れた密着性をもって被覆させることができる。 In addition, although cooling of the film 100 for sealing and pressurization of an atmosphere may be cooled after pressurization, it is preferable to perform cooling and pressurization substantially simultaneously. Thereby, the film 100 for sealing can be coat | covered with the more excellent adhesiveness corresponding to the shape of the unevenness | corrugation 6. FIG.
 上記の工程を経ることで、封止用フィルム100により、基板5と電子部品4とが被覆された封止用フィルム被覆電子部品搭載基板50を得ることができる。 Through the above steps, the sealing film-covered electronic component mounting substrate 50 in which the substrate 5 and the electronic component 4 are covered with the sealing film 100 can be obtained.
 <第3実施形態>
 [封止用フィルム]
 次に、本発明の封止用フィルム100の第3実施形態について説明する。
<Third Embodiment>
[Sealing film]
Next, 3rd Embodiment of the film 100 for sealing of this invention is described.
 図5は、本発明の封止用フィルムの第3実施形態を示す縦断面図、図6(a)~(c)は、図5に示す封止用フィルムを用いて電子部品搭載基板の封止方法を説明するための縦断面図である。なお、以下の説明では、説明の便宜上、図5、図6中の上側を「上」、下側を「下」と言う。 FIG. 5 is a longitudinal sectional view showing a third embodiment of the sealing film of the present invention, and FIGS. 6 (a) to 6 (c) show the sealing of the electronic component mounting substrate using the sealing film shown in FIG. It is a longitudinal cross-sectional view for demonstrating the stopping method. In the following description, for convenience of description, the upper side in FIGS. 5 and 6 is referred to as “upper” and the lower side is referred to as “lower”.
 以下、第3実施形態について説明するが、前記第1および第2実施形態と異なる点を中心に説明し、同様の事項についてはその説明を省略する。 Hereinafter, the third embodiment will be described, but the description will focus on differences from the first and second embodiments, and description of similar matters will be omitted.
 第3実施形態では、封止用フィルム100が備える被覆層14の構成が異なり、それ以外は、前記第2実施形態と同様である。 In 3rd Embodiment, the structure of the coating layer 14 with which the film 100 for sealing is provided differs, and other than that is the same as that of the said 2nd Embodiment.
 第3実施形態の封止用フィルム100において、被覆層14は、図5、図6に示すように、電磁波シールド層13よりも大きく形成され、その端部が電磁波シールド層13の端部(縁部)から露出している。換言すれば、被覆層14が、電磁波シールド層13の端部を越えて突出することで形成された突出部15(第1突出部)を備えている。 In the sealing film 100 of the third embodiment, as shown in FIGS. 5 and 6, the covering layer 14 is formed larger than the electromagnetic shielding layer 13, and the end thereof is the end (edge) of the electromagnetic shielding layer 13. Exposed). In other words, the coating layer 14 includes the protruding portion 15 (first protruding portion) formed by protruding beyond the end portion of the electromagnetic wave shielding layer 13.
 このような封止用フィルム100を用いて、電子部品4が上面(一方の面)側に搭載された電子部品搭載基板45に対して、絶縁層12を下側とし被覆層14を上側にして被覆すると、電子部品4は、絶縁層12を介して電磁波シールド層13で封止される。 Using such a sealing film 100, with respect to the electronic component mounting substrate 45 on which the electronic component 4 is mounted on the upper surface (one surface) side, the insulating layer 12 is on the lower side and the covering layer 14 is on the upper side. When covered, the electronic component 4 is sealed with the electromagnetic wave shielding layer 13 through the insulating layer 12.
 さらに、本実施形態では、この封止用フィルム100を用いた被覆の際に、被覆層14が備える突出部15は、基板5の下面(他方の面)側に折り込むことが可能なように構成されている。そのため、基板5の下面の端部51を、この突出部15により被覆することができる。したがって、本実施形態の封止用フィルム100により、基板5の上面側ばかりでなく、基板5の下面における端部51まで被覆層14により被覆することができ、より優れた気密性をもって、電子部品搭載基板45を被覆することができる。そのため、封止用フィルム100により被覆することで得られる封止用フィルム被覆電子部品搭載基板50において、基板5上の電子部品4が湿気や埃等の外部因子と接触するのをより的確に抑制または防止することができる。 Further, in the present embodiment, the projecting portion 15 included in the coating layer 14 is configured to be able to be folded to the lower surface (the other surface) side of the substrate 5 at the time of coating using the sealing film 100. Has been. Therefore, the end portion 51 on the lower surface of the substrate 5 can be covered with the protruding portion 15. Therefore, the sealing film 100 according to the present embodiment can cover not only the upper surface side of the substrate 5 but also the end portion 51 on the lower surface of the substrate 5 with the coating layer 14, and the electronic component with better airtightness. The mounting substrate 45 can be covered. Therefore, in the sealing film-covered electronic component mounting substrate 50 obtained by covering with the sealing film 100, the electronic component 4 on the substrate 5 is more accurately suppressed from coming into contact with external factors such as moisture and dust. Or it can be prevented.
 また、前記第1実施形態と同様に、封止用フィルム100の前記軟化点における伸び率は、150%以上3500%以下である。これにより、基板5の上面側から下面側へ突出部15を折りこませることで、端部51を被覆する際に、突出部15が屈曲した屈曲部において破断してしまうのを的確に抑制または防止することができる。 Further, as in the first embodiment, the elongation at the softening point of the sealing film 100 is 150% or more and 3500% or less. Thereby, by folding the protruding portion 15 from the upper surface side to the lower surface side of the substrate 5, when covering the end portion 51, it is possible to appropriately suppress or prevent the protruding portion 15 from breaking at the bent portion. Can be prevented.
 さらに、前記第1実施形態と同様に、封止用フィルム100の25℃以上80℃以下の温度範囲での線膨張率は、100ppm/K以下であることが好ましい。このように、封止用フィルム100の線膨張率を規定することによっても、基板5の上面側から下面側への突出部15の折り込みを、突出部15を屈曲させる屈曲部において破断を生じさせることなく確実に実施させることができる。 Furthermore, as in the first embodiment, the linear expansion coefficient in the temperature range of 25 ° C. to 80 ° C. of the sealing film 100 is preferably 100 ppm / K or less. Thus, by defining the linear expansion coefficient of the sealing film 100, the folding of the protruding portion 15 from the upper surface side to the lower surface side of the substrate 5 is caused to break at the bent portion that bends the protruding portion 15. It can be surely implemented without any problems.
 また、封止用フィルム100における、電磁波シールド層13の端部を越えて突出する被覆層14の突出部15の長さは、特に限定されず、0.1cm以上5.0cm以下であることが好ましく、0.5cm以上2.5cm以下であることがより好ましい。突出部15の長さをかかる範囲内に設定することにより、突出部15を、基板5の上面側から下面側に折り込みつつ、基板5の下面における端部51にまで到達させることができるため、突出部15による端部51の被覆を確実に実現させることができる。 Moreover, the length of the protrusion part 15 of the coating layer 14 which protrudes beyond the edge part of the electromagnetic wave shield layer 13 in the film 100 for sealing is not specifically limited, It may be 0.1 cm or more and 5.0 cm or less. Preferably, it is 0.5 cm or more and 2.5 cm or less. By setting the length of the protruding portion 15 within such a range, the protruding portion 15 can reach the end portion 51 on the lower surface of the substrate 5 while being folded from the upper surface side of the substrate 5 to the lower surface side. It is possible to reliably realize the covering of the end portion 51 by the protruding portion 15.
 [電子部品搭載基板の封止方法]
 次に、上述した第3実施形態の封止用フィルムを用いた電子部品搭載基板の封止方法について説明する。
[Method of sealing electronic component mounting board]
Next, a method for sealing an electronic component mounting substrate using the sealing film of the third embodiment described above will be described.
 本実施形態の電子部品搭載基板の封止方法は、基板5と電子部品4とを覆うように、絶縁層12を電子部品搭載基板45側にして封止用フィルム100を電子部品搭載基板45上に配置しつつ、突出部15を、基板5の下面(他方の面)側に折り込むことにより基板5の下面における端部51に接触させる配置工程と、封止用フィルム100を加熱し軟化させるとともに、減圧する加熱・減圧工程と、封止用フィルム100を冷却させるとともに、加圧することで、突出部15が基板5の下面における端部51に接触した状態で、基板5と電子部品4とを封止用フィルム100で封止する冷却・加圧工程とを有する。 The electronic component mounting substrate sealing method of this embodiment is such that the sealing film 100 is placed on the electronic component mounting substrate 45 with the insulating layer 12 facing the electronic component mounting substrate 45 so as to cover the substrate 5 and the electronic component 4. And placing the protruding portion 15 in contact with the end portion 51 on the lower surface of the substrate 5 by folding the protruding portion 15 toward the lower surface (the other surface) of the substrate 5 and heating and softening the sealing film 100. The substrate 5 and the electronic component 4 are brought into contact with the end portion 51 on the lower surface of the substrate 5 by cooling and pressurizing the heating film / depressurization step for reducing the pressure and the sealing film 100. And a cooling / pressurizing step of sealing with the sealing film 100.
 以下、電子部品搭載基板の封止方法の各工程について、順次説明する。
(配置工程)
 まず、図6(a)に示すように、封止用フィルム100が備える絶縁層12、電磁波シールド層13および被覆層14のうち絶縁層12を、電子部品搭載基板45に対向させた状態で、電子部品搭載基板45が備える基板5と電子部品4とを覆うように、封止用フィルム100を電子部品搭載基板45上に配置する。
Hereafter, each process of the sealing method of an electronic component mounting substrate is demonstrated sequentially.
(Arrangement process)
First, as shown in FIG. 6A, the insulating layer 12 of the insulating film 12, the electromagnetic wave shielding layer 13, and the coating layer 14 included in the sealing film 100 is opposed to the electronic component mounting substrate 45. The sealing film 100 is disposed on the electronic component mounting substrate 45 so as to cover the substrate 5 and the electronic component 4 included in the electronic component mounting substrate 45.
 そして、この際、電磁波シールド層13の端部を越えて突出する被覆層14の突出部15を、基板5の下面側に折り込み、これにより、突出部15を端部51に接触させる(図6(b))。 At this time, the protruding portion 15 of the covering layer 14 protruding beyond the end portion of the electromagnetic wave shielding layer 13 is folded to the lower surface side of the substrate 5, thereby bringing the protruding portion 15 into contact with the end portion 51 (FIG. 6). (B)).
(加熱・減圧工程)
 次に、図6(b)に示す状態を維持したまま、封止用フィルム100を加熱し軟化させるとともに、減圧する。
(Heating and decompression process)
Next, the sealing film 100 is heated and softened while maintaining the state shown in FIG.
 このように、封止用フィルム100を加熱することにより、封止用フィルム100すなわち絶縁層12、電磁波シールド層13および被覆層14が軟化し、その結果、基板5の上面側では、基板5に電子部品4を搭載することにより形成された凹凸6の形状に対して、追従し得る状態となり、さらに、基板5の下面側では、端部51を、被覆し得る状態となる。 Thus, by heating the sealing film 100, the sealing film 100, that is, the insulating layer 12, the electromagnetic wave shielding layer 13, and the coating layer 14 are softened. As a result, on the upper surface side of the substrate 5, It will be in the state which can follow the shape of the unevenness | corrugation 6 formed by mounting the electronic component 4, and also will be in the state which can coat | cover the edge part 51 in the lower surface side of the board | substrate 5. FIG.
 また、この際、電子部品搭載基板45および封止用フィルム100を、減圧雰囲気下に配置することで、封止用フィルム100の外側ばかりでなく、電子部品搭載基板45と封止用フィルム100との間の気体(空気)が脱気される。 At this time, the electronic component mounting substrate 45 and the sealing film 100 are arranged in a reduced-pressure atmosphere, so that not only the outside of the sealing film 100 but also the electronic component mounting substrate 45 and the sealing film 100 The gas (air) in between is degassed.
 これにより、封止用フィルム100が伸展しながら、基板5の上側では、凹凸6の形状、すなわち、基板5上の電子部品4の形状に若干追従した状態となり、基板5の下側では、端部51を若干被覆した状態となる。 Thereby, while the sealing film 100 is extended, the shape of the unevenness 6 on the upper side of the substrate 5, that is, the shape of the electronic component 4 on the substrate 5 is slightly followed. The part 51 is slightly covered.
 本工程により、封止用フィルム100を、電子部品搭載基板45の上面側に形成された凹凸6の形状に追従し得る状態とし、さらに、突出部15が基板5の下面側に折り込まれて、端部51を被覆し得る状態とすることができる。 By this step, the sealing film 100 can be made to follow the shape of the unevenness 6 formed on the upper surface side of the electronic component mounting substrate 45, and the protrusion 15 is folded to the lower surface side of the substrate 5, The end portion 51 can be covered.
(冷却・加圧工程)
 次に、図6(c)に示すように、封止用フィルム100を冷却させるとともに、加圧する。
(Cooling / pressurization process)
Next, as shown in FIG. 6C, the sealing film 100 is cooled and pressurized.
 このように、減圧された雰囲気から加圧することで、前記加熱・減圧工程において、電子部品搭載基板45と封止用フィルム100との間が脱気され、減圧状態が維持されていることから、封止用フィルム100がさらに伸展することとなる。 Thus, by pressurizing from the decompressed atmosphere, in the heating and decompression step, the space between the electronic component mounting substrate 45 and the sealing film 100 is degassed, and the decompressed state is maintained. The sealing film 100 is further extended.
 その結果、基板5の上側では凹凸6の形状(電子部品4の形状)に対して優れた密着度(気密度)で追従し、さらに、端部51に対して優れた密着度で被覆した状態で、軟化した状態の封止用フィルム100により、基板5と電子部品4とが被覆される。 As a result, the upper side of the substrate 5 follows the shape of the unevenness 6 (the shape of the electronic component 4) with an excellent degree of adhesion (air density), and further covers the end portion 51 with an excellent degree of adhesion. Thus, the substrate 5 and the electronic component 4 are covered with the sealing film 100 in a softened state.
 この際、封止用フィルム100の軟化点における伸び率が150%以上3500%以下となっている。これにより、封止用フィルム100は、この加圧時に、電子部品搭載基板45に形成された凹凸6に対してより優れた形状追従性をもって伸展させることができる。そのため、軟化した状態の封止用フィルム100により、基板5の上側において基板5と電子部品4とを、さらには端部51を優れた密着性をもって被覆することができる。また、基板5の上面側から下面側へ突出部15を折りこませることで端部51に接触させる際に、突出部15が屈曲した屈曲部において破断してしまうのを的確に抑制または防止することができる。 At this time, the elongation at the softening point of the sealing film 100 is 150% or more and 3500% or less. Thereby, the film 100 for sealing can be extended with the more excellent shape followability with respect to the unevenness | corrugation 6 formed in the electronic component mounting board | substrate 45 at the time of this pressurization. Therefore, the sealing film 100 in a softened state can cover the substrate 5 and the electronic component 4 on the upper side of the substrate 5 and further the end portion 51 with excellent adhesion. Further, when the protruding portion 15 is folded from the upper surface side to the lower surface side of the substrate 5 and brought into contact with the end portion 51, it is possible to accurately suppress or prevent the protruding portion 15 from breaking at the bent portion. be able to.
 そして、封止用フィルム100により、基板5と電子部品4とを、さらには端部51を優れた密着性(気密性)をもって被覆した状態で、封止用フィルム100を冷却することで、この状態を維持したまま、封止用フィルム100が固化する。 Then, the sealing film 100 is cooled with the sealing film 100 in a state where the substrate 5 and the electronic component 4 are covered with the end 51 with excellent adhesion (airtightness). The sealing film 100 is solidified while maintaining the state.
 これにより、電子部品搭載基板45に形成された凹凸6の形状に追従した状態で、封止用フィルム100により、基板5の上側において、絶縁層12が接触した状態で基板5と電子部品4とが被覆され、基板5の下側において、折り込まれた被覆層14の突出部15が端部51を被覆した状態で封止用フィルム被覆電子部品搭載基板50が得られることとなる。そのため、この封止用フィルム被覆電子部品搭載基板50において、湿気や埃等の外部因子と電子部品4および電極3が接触するのをより的確に抑制または防止することができる。したがって、得られる封止用フィルム被覆電子部品搭載基板50ひいてはこの封止用フィルム被覆電子部品搭載基板50を備える電子機器のより信頼性の向上が図られる。 Thereby, the substrate 5 and the electronic component 4 are in contact with the insulating layer 12 on the upper side of the substrate 5 by the sealing film 100 while following the shape of the irregularities 6 formed on the electronic component mounting substrate 45. The sealing film-covered electronic component mounting substrate 50 is obtained in a state where the projecting portion 15 of the folded covering layer 14 covers the end portion 51 on the lower side of the substrate 5. Therefore, in the sealing film-covered electronic component mounting substrate 50, it is possible to more accurately suppress or prevent the external component such as moisture and dust from contacting the electronic component 4 and the electrode 3. Therefore, the reliability of the obtained electronic device including the sealing film-covered electronic component mounting substrate 50 and thus the sealing film-covered electronic component mounting substrate 50 can be improved.
 上記の工程を経ることで、封止用フィルム100により、基板5と電子部品4とが被覆された封止用フィルム被覆電子部品搭載基板50を得ることができる。 Through the above steps, the sealing film-covered electronic component mounting substrate 50 in which the substrate 5 and the electronic component 4 are covered with the sealing film 100 can be obtained.
 <第4実施形態>
 [封止用フィルム]
 次に、本発明の封止用フィルム100の第4実施形態について説明する。
<Fourth embodiment>
[Sealing film]
Next, 4th Embodiment of the film 100 for sealing of this invention is described.
 図7は、本発明の封止用フィルムの第4実施形態を示す縦断面図、図8(a)~(c)は、図7に示す封止用フィルムを用いて電子部品搭載基板の封止方法を説明するための縦断面図である。なお、以下の説明では、説明の便宜上、図7、図8中の上側を「上」、下側を「下」と言う。 FIG. 7 is a longitudinal sectional view showing a fourth embodiment of the sealing film of the present invention, and FIGS. 8A to 8C are views for sealing an electronic component mounting substrate using the sealing film shown in FIG. It is a longitudinal cross-sectional view for demonstrating the stopping method. In the following description, for convenience of description, the upper side in FIGS. 7 and 8 is referred to as “upper” and the lower side is referred to as “lower”.
 以下、第4実施形態について説明するが、前記第1~第3実施形態と異なる点を中心に説明し、同様の事項についてはその説明を省略する。 Hereinafter, although the fourth embodiment will be described, the description will focus on differences from the first to third embodiments, and description of similar matters will be omitted.
 第4実施形態では、封止用フィルム100が備える絶縁層12および被覆層14の構成が異なり、それ以外は、前記第2実施形態と同様である。 In the fourth embodiment, the configurations of the insulating layer 12 and the covering layer 14 included in the sealing film 100 are different, and the other configurations are the same as those in the second embodiment.
 第4実施形態の封止用フィルム100において、絶縁層12および被覆層14は、図7、図8に示すように、それぞれ、電磁波シールド層13よりも大きく形成され、それらの端部が電磁波シールド層13の端部(縁部)から露出している。換言すれば、絶縁層12および被覆層14が、電磁波シールド層13の端部を越えて突出することで形成された突出部15(第1突出部)および突出部16(第3突出部)を備えている。そして、これら突出部15と突出部16とは、電磁波シールド層13の端部を越えた位置で積層することで設けられた積層突出部65を形成する。 In the sealing film 100 of the fourth embodiment, the insulating layer 12 and the covering layer 14 are each formed larger than the electromagnetic wave shielding layer 13 as shown in FIG. 7 and FIG. It is exposed from the end (edge) of the layer 13. In other words, the projecting portion 15 (first projecting portion) and the projecting portion 16 (third projecting portion) formed by the insulating layer 12 and the covering layer 14 projecting beyond the end of the electromagnetic wave shielding layer 13 are provided. I have. And these protrusion part 15 and protrusion part 16 form the lamination | stacking protrusion part 65 provided by laminating | stacking in the position beyond the edge part of the electromagnetic wave shield layer 13. FIG.
 このような封止用フィルム100を用いて、電子部品4が上面(一方の面)側に搭載された電子部品搭載基板45に対して、絶縁層12を下側とし、被覆層14を上側にして、被覆すると、電子部品4は、絶縁層12を介して電磁波シールド層13で封止される。 Using such a sealing film 100, with respect to the electronic component mounting substrate 45 on which the electronic component 4 is mounted on the upper surface (one surface) side, the insulating layer 12 is on the lower side and the covering layer 14 is on the upper side. Then, the electronic component 4 is sealed with the electromagnetic wave shielding layer 13 through the insulating layer 12.
 さらに、本実施形態では、この封止用フィルム100を用いた被覆の際に、突出部15と突出部16とを積層することで形成された積層突出部65は、基板5の下面(他方の面)側に折り込むことが可能なように構成されている。そのため、基板5の下面の端部51を、この積層突出部65が備える突出部15により被覆することができる。したがって、本実施形態の封止用フィルム100により、基板5の上面側ばかりでなく、基板5の下面における端部51まで積層突出部65により被覆することができ、より優れた気密性をもって、電子部品搭載基板45を被覆することができる。そのため、封止用フィルム100により被覆することで得られる封止用フィルム被覆電子部品搭載基板50において、基板5上の電子部品4が湿気や埃等の外部因子と接触するのをより的確に抑制または防止することができる。 Furthermore, in the present embodiment, the laminated projection 65 formed by laminating the projection 15 and the projection 16 at the time of coating using the sealing film 100 is the bottom surface of the substrate 5 (the other side). It is configured so that it can be folded to the surface) side. Therefore, the end portion 51 on the lower surface of the substrate 5 can be covered with the protruding portion 15 included in the stacked protruding portion 65. Therefore, the sealing film 100 of the present embodiment can cover not only the upper surface side of the substrate 5 but also the end portion 51 on the lower surface of the substrate 5 with the laminated projecting portion 65, and has an excellent airtightness. The component mounting board 45 can be covered. Therefore, in the sealing film-covered electronic component mounting substrate 50 obtained by covering with the sealing film 100, the electronic component 4 on the substrate 5 is more accurately suppressed from coming into contact with external factors such as moisture and dust. Or it can be prevented.
 また、積層突出部65は、これら突出部15と突出部16とが、電磁波シールド層13の端部を越えた位置で積層することで形成され、電磁波シールド層13の端部をも絶縁層12および被覆層14により被覆されることで、電子部品4および電子部品搭載基板45の外側に位置する電子部品に対する電磁波シールド層13の絶縁性をより確実に確保することができる。 The laminated protrusion 65 is formed by laminating the protrusion 15 and the protrusion 16 at a position beyond the end of the electromagnetic wave shielding layer 13, and the end of the electromagnetic wave shielding layer 13 is also formed on the insulating layer 12. By covering with the covering layer 14, the insulating property of the electromagnetic wave shielding layer 13 with respect to the electronic component 4 and the electronic component located outside the electronic component mounting board 45 can be more reliably ensured.
 さらに、前記第1実施形態と同様に、前記軟化点における伸び率は、150%以上3500%以下である。これにより、基板5の上面側から下面側へ積層突出部65を折りこませることで、端部51を被覆する際に、積層突出部65が屈曲した屈曲部において破断してしまうのを的確に抑制または防止することができる。 Furthermore, as in the first embodiment, the elongation at the softening point is 150% or more and 3500% or less. Thus, by folding the laminated protrusion 65 from the upper surface side to the lower surface side of the substrate 5, it is possible to accurately break the laminated protrusion 65 at the bent portion when covering the end portion 51. It can be suppressed or prevented.
 また、前記第1実施形態と同様に、封止用フィルム100の25℃以上80℃以下の温度範囲での線膨張率は、100ppm/K以下であることが好ましい。このように、封止用フィルム100の線膨張率を規定することによっても、基板5の上面側から下面側への積層突出部65の折り込みを、積層突出部65を屈曲させる屈曲部において破断を生じさせることなく確実に実施させることができる。 Further, similarly to the first embodiment, the linear expansion coefficient in the temperature range of 25 ° C. to 80 ° C. of the sealing film 100 is preferably 100 ppm / K or less. As described above, by defining the linear expansion coefficient of the sealing film 100, the folding of the laminated protrusion 65 from the upper surface side to the lower surface side of the substrate 5 is broken at the bent portion that bends the laminated protrusion 65. It can be carried out reliably without causing it.
 さらに、封止用フィルム100における、電磁波シールド層13の端部を越えて突出する積層突出部65の長さは、特に限定されず、0.1cm以上5.0cm以下であることが好ましく、0.5cm以上2.5cm以下であることがより好ましい。積層突出部65の長さをかかる範囲内に設定することにより、積層突出部65を、基板5の上面側から下面側に折り込みつつ、基板5の下面における端部51にまで到達させることができるため、積層突出部65による端部51の被覆を確実に実現させることができる。 Further, the length of the laminated protrusion 65 protruding beyond the end of the electromagnetic wave shielding layer 13 in the sealing film 100 is not particularly limited, and is preferably 0.1 cm or more and 5.0 cm or less. More preferably, it is 5 cm or more and 2.5 cm or less. By setting the length of the laminated protrusion 65 within such a range, the laminated protrusion 65 can reach the end 51 on the lower surface of the substrate 5 while being folded from the upper surface side to the lower surface side of the substrate 5. Therefore, it is possible to reliably realize the covering of the end portion 51 by the stacked projecting portion 65.
 [電子部品搭載基板の封止方法]
 次に、上述した第4実施形態の封止用フィルムを用いた電子部品搭載基板の封止方法について説明する。
[Method of sealing electronic component mounting board]
Next, a method for sealing an electronic component mounting substrate using the sealing film of the fourth embodiment described above will be described.
 本実施形態の電子部品搭載基板の封止方法は、基板5と電子部品4とを覆うように、絶縁層12を電子部品搭載基板45側にして封止用フィルム100を電子部品搭載基板45上に配置しつつ、積層突出部65を、基板5の下面(他方の面)側に折り込むことにより基板5の下面における端部51に接触させる配置工程と、封止用フィルム100を加熱し軟化させるとともに、減圧する加熱・減圧工程と、封止用フィルム100を冷却させるとともに、加圧することで、積層突出部65が基板5の下面における端部51に接触した状態で、基板5と電子部品4とを封止用フィルム100で封止する冷却・加圧工程とを有する。 The electronic component mounting substrate sealing method of this embodiment is such that the sealing film 100 is placed on the electronic component mounting substrate 45 with the insulating layer 12 facing the electronic component mounting substrate 45 so as to cover the substrate 5 and the electronic component 4. The stacking protrusion 65 is placed on the lower surface (the other surface) side of the substrate 5 to be brought into contact with the end portion 51 on the lower surface of the substrate 5 and the sealing film 100 is heated and softened. At the same time, the substrate 5 and the electronic component 4 are brought into contact with the end portion 51 on the lower surface of the substrate 5 by cooling and pressurizing the sealing film 100 with the heating / decompression step of reducing the pressure. And a cooling / pressurizing step for sealing with the sealing film 100.
 以下、電子部品搭載基板の封止方法の各工程について、順次説明する。
(配置工程)
 まず、図8(a)に示すように、封止用フィルム100が備える絶縁層12、電磁波シールド層13および被覆層14のうち絶縁層12を、電子部品搭載基板45に対向させた状態で、電子部品搭載基板45が備える基板5と電子部品4とを覆うように、封止用フィルム100を電子部品搭載基板45上に配置する。
Hereafter, each process of the sealing method of an electronic component mounting substrate is demonstrated sequentially.
(Arrangement process)
First, as shown in FIG. 8A, the insulating layer 12 of the insulating layer 12, the electromagnetic wave shielding layer 13, and the coating layer 14 included in the sealing film 100 is opposed to the electronic component mounting substrate 45. The sealing film 100 is disposed on the electronic component mounting substrate 45 so as to cover the substrate 5 and the electronic component 4 included in the electronic component mounting substrate 45.
 そして、この際、電磁波シールド層13の端部を越えて突出する積層突出部65を、基板5の下面側に折り込み、これにより、積層突出部65を端部51に接触させる(図8(b))。 At this time, the laminated protrusion 65 that protrudes beyond the end of the electromagnetic wave shielding layer 13 is folded to the lower surface side of the substrate 5, thereby bringing the laminated protrusion 65 into contact with the end 51 (FIG. 8B). )).
(加熱・減圧工程)
 次に、図8(b)に示す状態を維持したまま、封止用フィルム100を加熱し軟化させるとともに、減圧する。
(Heating and decompression process)
Next, the sealing film 100 is heated and softened while maintaining the state shown in FIG.
 このように、封止用フィルム100を加熱することにより、封止用フィルム100すなわち絶縁層12、電磁波シールド層13および被覆層14が軟化し、その結果、基板5の上面側では、基板5に電子部品4を搭載することにより形成された凹凸6の形状に対して、追従し得る状態となり、さらに、基板5の下面側では、端部51を、被覆し得る状態となる。 Thus, by heating the sealing film 100, the sealing film 100, that is, the insulating layer 12, the electromagnetic wave shielding layer 13, and the coating layer 14 are softened. As a result, on the upper surface side of the substrate 5, It will be in the state which can follow the shape of the unevenness | corrugation 6 formed by mounting the electronic component 4, and also will be in the state which can coat | cover the edge part 51 in the lower surface side of the board | substrate 5. FIG.
 また、この際、電子部品搭載基板45および封止用フィルム100を、減圧雰囲気下に配置することで、封止用フィルム100の外側ばかりでなく、電子部品搭載基板45と封止用フィルム100との間の気体(空気)が脱気される。 At this time, the electronic component mounting substrate 45 and the sealing film 100 are arranged in a reduced-pressure atmosphere, so that not only the outside of the sealing film 100 but also the electronic component mounting substrate 45 and the sealing film 100 The gas (air) in between is degassed.
 これにより、封止用フィルム100が伸展しながら、基板5の上側では、凹凸6の形状、すなわち、基板5上の電子部品4の形状に若干追従した状態となり、基板5の下側では、端部51を若干被覆した状態となる。 Thereby, while the sealing film 100 is extended, the shape of the unevenness 6 on the upper side of the substrate 5, that is, the shape of the electronic component 4 on the substrate 5 is slightly followed. The part 51 is slightly covered.
 本工程により、封止用フィルム100を、電子部品搭載基板45の上面側に形成された凹凸6の形状に追従し得る状態とし、さらに、積層突出部65が基板5の下面側に折り込まれて、端部51を被覆し得る状態とすることができる。 By this step, the sealing film 100 can be made to follow the shape of the unevenness 6 formed on the upper surface side of the electronic component mounting substrate 45, and the laminated protrusion 65 is folded on the lower surface side of the substrate 5. The end portion 51 can be covered.
(冷却・加圧工程)
 次に、図8(c)に示すように、封止用フィルム100を冷却させるとともに、加圧する。
(Cooling / pressurization process)
Next, as shown in FIG. 8C, the sealing film 100 is cooled and pressurized.
 このように、減圧された雰囲気から加圧することで、前記加熱・減圧工程において、電子部品搭載基板45と封止用フィルム100との間が脱気され、減圧状態が維持されていることから、封止用フィルム100がさらに伸展することとなる。 Thus, by pressurizing from the decompressed atmosphere, in the heating and decompression step, the space between the electronic component mounting substrate 45 and the sealing film 100 is degassed, and the decompressed state is maintained. The sealing film 100 is further extended.
 その結果、基板5の上側では凹凸6の形状(電子部品4の形状)に対して優れた密着度(気密度)で追従し、さらに、端部51に対して優れた密着度で被覆した状態で、軟化した状態の封止用フィルム100により、基板5と電子部品4とが被覆される。 As a result, the upper side of the substrate 5 follows the shape of the unevenness 6 (the shape of the electronic component 4) with an excellent degree of adhesion (air density), and further covers the end portion 51 with an excellent degree of adhesion. Thus, the substrate 5 and the electronic component 4 are covered with the sealing film 100 in a softened state.
 この際、封止用フィルム100の軟化点における伸び率が150%以上3500%以下となっている。これにより、封止用フィルム100は、この加圧時に、電子部品搭載基板45に形成された凹凸6に対してより優れた形状追従性をもって伸展させることができる。そのため、軟化した状態の封止用フィルム100により、基板5の上側において基板5と電子部品4とを、さらには端部51を優れた密着性をもって被覆することができる。また、基板5の上面側から下面側へ積層突出部65を折りこませることで端部51に接触させる際に、積層突出部65が屈曲した屈曲部において破断してしまうのを的確に抑制または防止することができる。 At this time, the elongation at the softening point of the sealing film 100 is 150% or more and 3500% or less. Thereby, the film 100 for sealing can be extended with the more excellent shape followability with respect to the unevenness | corrugation 6 formed in the electronic component mounting board | substrate 45 at the time of this pressurization. Therefore, the sealing film 100 in a softened state can cover the substrate 5 and the electronic component 4 on the upper side of the substrate 5 and further the end portion 51 with excellent adhesion. In addition, when the laminated protrusion 65 is folded from the upper surface side to the lower surface side of the substrate 5 to be brought into contact with the end portion 51, it is possible to accurately suppress or prevent the laminated protrusion 65 from being broken at the bent portion. Can be prevented.
 そして、封止用フィルム100により、基板5と電子部品4とを、さらには端部51を優れた密着性(気密性)をもって被覆した状態で、封止用フィルム100を冷却することで、この状態を維持したまま、封止用フィルム100が固化する。 Then, the sealing film 100 is cooled with the sealing film 100 in a state where the substrate 5 and the electronic component 4 are covered with the end 51 with excellent adhesion (airtightness). The sealing film 100 is solidified while maintaining the state.
 これにより、電子部品搭載基板45に形成された凹凸6の形状に追従した状態で、封止用フィルム100により、基板5の上側において、絶縁層12が接触した状態で基板5と電子部品4とが被覆され、基板5の下側において、折り込まれた積層突出部65が端部51を被覆した状態で封止用フィルム被覆電子部品搭載基板50が得られることとなる。そのため、この封止用フィルム被覆電子部品搭載基板50において、湿気や埃等の外部因子と電子部品4および電極3が接触するのをより的確に抑制または防止することができる。したがって、得られる封止用フィルム被覆電子部品搭載基板50ひいてはこの封止用フィルム被覆電子部品搭載基板50を備える電子機器のより信頼性の向上が図られる。 Thereby, the substrate 5 and the electronic component 4 are in contact with the insulating layer 12 on the upper side of the substrate 5 by the sealing film 100 while following the shape of the irregularities 6 formed on the electronic component mounting substrate 45. The film-covered electronic component mounting substrate 50 for sealing is obtained in a state where the folded laminated protrusion 65 covers the end 51 on the lower side of the substrate 5. Therefore, in the sealing film-covered electronic component mounting substrate 50, it is possible to more accurately suppress or prevent the external component such as moisture and dust from contacting the electronic component 4 and the electrode 3. Therefore, the reliability of the obtained electronic device including the sealing film-covered electronic component mounting substrate 50 and thus the sealing film-covered electronic component mounting substrate 50 can be improved.
 上記の工程を経ることで、封止用フィルム100により、基板5と電子部品4とが被覆された封止用フィルム被覆電子部品搭載基板50を得ることができる。 Through the above steps, the sealing film-covered electronic component mounting substrate 50 in which the substrate 5 and the electronic component 4 are covered with the sealing film 100 can be obtained.
 <第5実施形態>
 次に、本発明の封止用フィルム100の第5実施形態について説明する。
<Fifth Embodiment>
Next, 5th Embodiment of the film 100 for sealing of this invention is described.
 図9は、本発明の封止用フィルムの第5実施形態を示す縦断面図、図10(a)~(c)は、図9に示す封止用フィルムを用いて電子部品搭載基板の封止方法を説明するための縦断面図である。なお、以下の説明では、説明の便宜上、図9、図10中の上側を「上」、下側を「下」と言う。 FIG. 9 is a longitudinal sectional view showing a fifth embodiment of the sealing film of the present invention, and FIGS. 10 (a) to 10 (c) show the sealing of the electronic component mounting substrate using the sealing film shown in FIG. It is a longitudinal cross-sectional view for demonstrating the stopping method. In the following description, for convenience of description, the upper side in FIGS. 9 and 10 is referred to as “upper” and the lower side is referred to as “lower”.
 以下、第5実施形態について説明するが、前記第1~第4実施形態と異なる点を中心に説明し、同様の事項についてはその説明を省略する。 Hereinafter, the fifth embodiment will be described, but the description will focus on differences from the first to fourth embodiments, and description of similar matters will be omitted.
 第5実施形態では、封止用フィルム100が備える電磁波シールド層13および被覆層14の構成が異なり、さらに、この封止用フィルム100を用いて被覆する電子部品搭載基板45の構成が異なること以外は、前記第2実施形態と同様である。 In the fifth embodiment, the configurations of the electromagnetic wave shielding layer 13 and the covering layer 14 included in the sealing film 100 are different, and further, the configuration of the electronic component mounting substrate 45 covered with the sealing film 100 is different. Is the same as in the second embodiment.
 第5実施形態の封止用フィルム100において、電磁波シールド層13および被覆層14は、図9、図10に示すように、絶縁層12よりも大きく形成されている。これにより、電磁波シールド層13および被覆層14のうち絶縁層12側に位置する電磁波シールド層13の端部が絶縁層12の端部(縁部)から露出している。換言すれば、電磁波シールド層13が、絶縁層12の端部を越えて突出することで形成された突出部17(第2突出部)を備えている。 In the sealing film 100 of the fifth embodiment, the electromagnetic wave shielding layer 13 and the covering layer 14 are formed larger than the insulating layer 12 as shown in FIGS. Thereby, the edge part of the electromagnetic wave shielding layer 13 located in the insulating layer 12 side among the electromagnetic wave shielding layer 13 and the coating layer 14 is exposed from the edge part (edge part) of the insulating layer 12. In other words, the electromagnetic wave shielding layer 13 includes the protruding portion 17 (second protruding portion) formed by protruding beyond the end portion of the insulating layer 12.
 また、第5実施形態の封止用フィルム100により被覆される電子部品搭載基板45は、図10に示すように、基板5と、基板5の上面(一方の面)側の中央部に搭載(載置)された電子部品4と、この電子部品4に電気的に接続され、基板5の上面(一方の面)側の端部52に形成された電極3とを備えている。このような電子部品搭載基板45において、基板5の上面への電子部品4および電極3の搭載により、基板5上に凸部61と凹部62とからなる凹凸6が形成される。なお、電極3としては、例えば、外部から電気を供給するための電源と接続するための電極、電子部品搭載基板45の外側に位置する、他の電子部品と電気的に接続するための電極、および、電子部品4を接地するためのグランド電極等が挙げられる。 Moreover, the electronic component mounting substrate 45 covered with the sealing film 100 of the fifth embodiment is mounted on the substrate 5 and the central portion on the upper surface (one surface) side of the substrate 5 (see FIG. 10). The electronic component 4 that is placed) and the electrode 3 that is electrically connected to the electronic component 4 and is formed on the end portion 52 on the upper surface (one surface) side of the substrate 5 are provided. In such an electronic component mounting substrate 45, the unevenness 6 including the convex portion 61 and the concave portion 62 is formed on the substrate 5 by mounting the electronic component 4 and the electrode 3 on the upper surface of the substrate 5. In addition, as the electrode 3, for example, an electrode for connecting to a power source for supplying electricity from the outside, an electrode for electrically connecting to another electronic component located outside the electronic component mounting board 45, In addition, a ground electrode for grounding the electronic component 4 may be used.
 このように電子部品4および電極3が上面側に搭載された電子部品搭載基板45に対して、絶縁層12を下側とし、被覆層14を上側にして、封止用フィルム100を用いて被覆すると、電子部品4は、絶縁層12を介して電磁波シールド層13で封止される。 Thus, the electronic component mounting substrate 45 on which the electronic component 4 and the electrode 3 are mounted on the upper surface side is covered with the sealing film 100 with the insulating layer 12 on the lower side and the coating layer 14 on the upper side. Then, the electronic component 4 is sealed with the electromagnetic wave shielding layer 13 through the insulating layer 12.
 さらに、本実施形態では、この封止用フィルム100を用いた被覆の際に、電磁波シールド層13は、電磁波シールド層13が備える突出部17において、絶縁層12から露出している。そのため、基板5の上面の端部52に形成された電極3に、この突出部17を接触させた状態とすることができる。したがって、この突出部17は、電磁波シールド層13で構成され導電性を有することから、得られた封止用フィルム被覆電子部品搭載基板50おいて、この電磁波シールド層13を介した電極3と外部との電気的な接続を確保することができる。なお、本実施形態では、電磁波シールド層13の上面のほぼ全面には被覆層14が形成されていることから、電磁波シールド層13を介した電極3と外部との電気的な接続を確保する場合には、被覆層14の一部を除去して電磁波シールド層13が露出する露出部を形成し、この露出部において、電磁波シールド層13と外部とを電気的に接続することで、この接続が実現される。 Furthermore, in this embodiment, the electromagnetic wave shielding layer 13 is exposed from the insulating layer 12 at the projecting portion 17 provided in the electromagnetic wave shielding layer 13 when the sealing film 100 is used for coating. Therefore, the protruding portion 17 can be brought into contact with the electrode 3 formed on the end portion 52 on the upper surface of the substrate 5. Therefore, since the protrusion 17 is composed of the electromagnetic wave shielding layer 13 and has conductivity, in the obtained film-covered electronic component mounting substrate 50 for sealing, the electrode 3 and the outside through the electromagnetic wave shielding layer 13 are provided. Can be secured. In the present embodiment, since the coating layer 14 is formed on almost the entire upper surface of the electromagnetic wave shielding layer 13, the electrical connection between the electrode 3 and the outside via the electromagnetic wave shielding layer 13 is ensured. Is formed by removing a part of the coating layer 14 to form an exposed portion where the electromagnetic wave shielding layer 13 is exposed, and electrically connecting the electromagnetic wave shielding layer 13 and the outside at the exposed portion. Realized.
 また、封止用フィルム100における、絶縁層12の端部を越えて突出する電磁波シールド層13の突出部17の長さは、特に限定されず、0.1cm以上5.0cm以下であることが好ましく、0.5cm以上2.5cm以下であることがより好ましい。突出部17の長さをかかる範囲内に設定することで、この突出部17により、基板5の上側に位置する電極3を被覆して、突出部17と電極3との電気的な接続を実現することができる。 In addition, the length of the protruding portion 17 of the electromagnetic wave shielding layer 13 protruding beyond the end portion of the insulating layer 12 in the sealing film 100 is not particularly limited, and may be 0.1 cm or more and 5.0 cm or less. Preferably, it is 0.5 cm or more and 2.5 cm or less. By setting the length of the projecting portion 17 within such a range, the projecting portion 17 covers the electrode 3 located on the upper side of the substrate 5 and realizes electrical connection between the projecting portion 17 and the electrode 3. can do.
 [電子部品搭載基板の封止方法]
 次に、上述した第5実施形態の封止用フィルムを用いた電子部品搭載基板の封止方法について説明する。
[Method of sealing electronic component mounting board]
Next, a method for sealing an electronic component mounting substrate using the sealing film of the fifth embodiment described above will be described.
 本実施形態の電子部品搭載基板の封止方法は、基板5と電子部品4とを覆うように、絶縁層12を電子部品搭載基板45側にして封止用フィルム100を電子部品搭載基板45上に配置しつつ、突出部17を、基板5の上面(一方の面)側の電極3に接触させる配置工程と、封止用フィルム100を加熱し軟化させるとともに、減圧する加熱・減圧工程と、封止用フィルム100を冷却させるとともに、加圧することで、突出部17が電極3に接触した状態で、基板5と電子部品4と電極3とを封止用フィルム100で封止する冷却・加圧工程とを有する。 The electronic component mounting substrate sealing method of this embodiment is such that the sealing film 100 is placed on the electronic component mounting substrate 45 with the insulating layer 12 facing the electronic component mounting substrate 45 so as to cover the substrate 5 and the electronic component 4. An arrangement step of bringing the protrusion 17 into contact with the electrode 3 on the upper surface (one surface) side of the substrate 5, a heating / decompression step of heating and softening the sealing film 100, and reducing the pressure, The sealing film 100 is cooled and pressurized so that the substrate 17, the electronic component 4, and the electrode 3 are sealed with the sealing film 100 in a state where the protruding portion 17 is in contact with the electrode 3. Pressure step.
 以下、電子部品搭載基板の封止方法の各工程について、順次説明する。
(配置工程)
 まず、図10(a)に示すように、封止用フィルム100が備える絶縁層12、電磁波シールド層13および被覆層14のうち絶縁層12を、電子部品搭載基板45に対向させた状態で、電子部品搭載基板45が備える基板5と電子部品4と電極3とを覆うように、封止用フィルム100を電子部品搭載基板45上に配置する。
Hereafter, each process of the sealing method of an electronic component mounting substrate is demonstrated sequentially.
(Arrangement process)
First, as shown in FIG. 10A, the insulating layer 12 of the insulating film 12, the electromagnetic wave shielding layer 13, and the coating layer 14 included in the sealing film 100 is opposed to the electronic component mounting substrate 45. The sealing film 100 is disposed on the electronic component mounting substrate 45 so as to cover the substrate 5, the electronic component 4, and the electrode 3 included in the electronic component mounting substrate 45.
 この際、封止用フィルム100の中央部に位置する絶縁層12により電子部品4を被覆させ、絶縁層12の端部を越えて突出する突出部17により電極3を被覆させる(図10(b))。 At this time, the electronic component 4 is covered with the insulating layer 12 located at the center of the sealing film 100, and the electrode 3 is covered with the protruding portion 17 protruding beyond the end of the insulating layer 12 (FIG. 10B). )).
(加熱・減圧工程)
 次に、図10(b)に示す状態を維持したまま、封止用フィルム100を加熱し軟化させるとともに、減圧する。
(Heating and decompression process)
Next, while maintaining the state shown in FIG. 10B, the sealing film 100 is heated and softened, and the pressure is reduced.
 このように、封止用フィルム100を加熱することにより、封止用フィルム100すなわち絶縁層12、電磁波シールド層13および被覆層14が軟化し、その結果、基板5の上面側では、基板5に電子部品4および電極3を搭載することにより形成された凹凸6の形状に対して、追従し得る状態となる。 Thus, by heating the sealing film 100, the sealing film 100, that is, the insulating layer 12, the electromagnetic wave shielding layer 13, and the coating layer 14 are softened. As a result, on the upper surface side of the substrate 5, It will be in the state which can follow the shape of the unevenness | corrugation 6 formed by mounting the electronic component 4 and the electrode 3. FIG.
 また、この際、電子部品搭載基板45および封止用フィルム100を、減圧雰囲気下に配置することで、封止用フィルム100の外側ばかりでなく、電子部品搭載基板45と封止用フィルム100との間の気体(空気)が脱気される。 At this time, the electronic component mounting substrate 45 and the sealing film 100 are arranged in a reduced-pressure atmosphere, so that not only the outside of the sealing film 100 but also the electronic component mounting substrate 45 and the sealing film 100 The gas (air) in between is degassed.
 これにより、封止用フィルム100が伸展しながら、基板5の上側では、凹凸6の形状、すなわち、基板5上の電子部品4および電極3の形状に若干追従した状態となる。 Thereby, while the sealing film 100 extends, the shape of the unevenness 6, that is, the shape of the electronic component 4 and the electrode 3 on the substrate 5 is slightly followed on the upper side of the substrate 5.
 本工程により、電子部品搭載基板45の上面側に形成された凹凸6の形状に対して、封止用フィルム100を、追従し得る状態とすることができる。 By this step, the sealing film 100 can be made to follow the shape of the irregularities 6 formed on the upper surface side of the electronic component mounting substrate 45.
(冷却・加圧工程)
 次に、図10(c)に示すように、封止用フィルム100を冷却させるとともに、加圧する。
(Cooling / pressurization process)
Next, as shown in FIG. 10C, the sealing film 100 is cooled and pressurized.
 このように、減圧された雰囲気から加圧することで、前記加熱・減圧工程において、電子部品搭載基板45と封止用フィルム100との間が脱気され、減圧状態が維持されていることから、封止用フィルム100がさらに伸展することとなる。 Thus, by pressurizing from the decompressed atmosphere, in the heating and decompression step, the space between the electronic component mounting substrate 45 and the sealing film 100 is degassed, and the decompressed state is maintained. The sealing film 100 is further extended.
 その結果、基板5の上側では凹凸6の形状(電子部品4および電極3の形状)に優れた密着度(気密度)で追従した状態で、軟化した状態の封止用フィルム100により、基板5と電子部品4と電極3とが被覆される。 As a result, on the upper side of the substrate 5, the substrate 5 is sealed by the softened sealing film 100 in a state in which the shape of the unevenness 6 (the shape of the electronic component 4 and the electrode 3) is followed with excellent adhesion (air density). The electronic component 4 and the electrode 3 are covered.
 この際、封止用フィルム100の軟化点における伸び率が150%以上3500%以下となっている。これにより、封止用フィルム100は、この加圧時に、電子部品搭載基板45に形成された凹凸6に対してより優れた形状追従性をもって伸展させることができるため、軟化した状態の封止用フィルム100により、基板5の上側において基板5と電子部品4と電極3とを優れた密着性をもって被覆することができる。 At this time, the elongation at the softening point of the sealing film 100 is 150% or more and 3500% or less. Thereby, since the film 100 for sealing can be extended with the more excellent shape followable | trackability with respect to the unevenness | corrugation 6 formed in the electronic component mounting board | substrate 45 at the time of this pressurization, for the sealing of the softened state With the film 100, the substrate 5, the electronic component 4, and the electrode 3 can be coated on the upper side of the substrate 5 with excellent adhesion.
 そして、封止用フィルム100により、基板5と電子部品4と電極3とを優れた密着性(気密性)をもって被覆した状態で、封止用フィルム100を冷却することで、この状態を維持したまま、封止用フィルム100が固化する。 And this state was maintained by cooling the sealing film 100 in the state which coat | covered the board | substrate 5, the electronic component 4, and the electrode 3 with the outstanding adhesiveness (airtightness) with the sealing film 100. The sealing film 100 is solidified.
 これにより、電子部品搭載基板45に形成された凹凸6の形状に追従した状態で、封止用フィルム100により、基板5の上側において、絶縁層12が接触した状態で基板5と電子部品4とが被覆され、さらに、電磁波シールド層13が接触した状態で電極3が被覆された封止用フィルム被覆電子部品搭載基板50が得られることとなる。そのため、この封止用フィルム被覆電子部品搭載基板50において、湿気や埃等の外部因子と電子部品4および電極3が接触するのを的確に抑制または防止することができる。したがって、得られる封止用フィルム被覆電子部品搭載基板50ひいてはこの封止用フィルム被覆電子部品搭載基板50を備える電子機器の信頼性の向上が図られる。 Thereby, the substrate 5 and the electronic component 4 are in contact with the insulating layer 12 on the upper side of the substrate 5 by the sealing film 100 while following the shape of the irregularities 6 formed on the electronic component mounting substrate 45. In addition, a sealing film-covered electronic component mounting substrate 50 in which the electrode 3 is coated in a state where the electromagnetic wave shielding layer 13 is in contact with the substrate is obtained. Therefore, in this film-covered electronic component mounting substrate 50 for sealing, it is possible to accurately suppress or prevent the external component such as moisture and dust from contacting the electronic component 4 and the electrode 3. Accordingly, the reliability of the obtained electronic device including the sealing film-covered electronic component mounting substrate 50 and thus the sealing film-covered electronic component mounting substrate 50 can be improved.
 また、上記のような電子部品搭載基板45の被覆に用いられる封止用フィルム100は、絶縁層12、電磁波シールド層13および被覆層14の積層体で構成されるが、電磁波シールド層13は、その端部において、絶縁層12の端部を越えて突出することで形成された突出部17を備えている。そして、本実施形態では、この突出部17が、絶縁層12を介することなく、電極3を直接被覆する。これにより、導電性を有する突出部17(電磁波シールド層13)に電極3が電気的に接続されるため、得られる封止用フィルム被覆電子部品搭載基板50において、この突出部17を介した電極3と外部との電気的な接続を確保することが可能となる。 Further, the sealing film 100 used for covering the electronic component mounting substrate 45 as described above is composed of a laminate of the insulating layer 12, the electromagnetic wave shielding layer 13, and the covering layer 14, but the electromagnetic wave shielding layer 13 is At the end portion, a protruding portion 17 formed by protruding beyond the end portion of the insulating layer 12 is provided. In the present embodiment, the protruding portion 17 directly covers the electrode 3 without the insulating layer 12 interposed therebetween. Thereby, since the electrode 3 is electrically connected to the projecting portion 17 (electromagnetic wave shield layer 13) having conductivity, in the obtained film-covered electronic component mounting substrate 50 for sealing, the electrode via the projecting portion 17 is used. 3 and the outside can be secured.
 上記の工程を経ることで、封止用フィルム100により、基板5と電子部品4と電極3とが被覆された封止用フィルム被覆電子部品搭載基板50を得ることができる。 Through the above steps, the sealing film-covered electronic component mounting substrate 50 in which the substrate 5, the electronic component 4, and the electrode 3 are covered with the sealing film 100 can be obtained.
 <第6実施形態>
 [封止用フィルム]
 次に、本発明の封止用フィルム100の第6実施形態について説明する。
<Sixth Embodiment>
[Sealing film]
Next, 6th Embodiment of the film 100 for sealing of this invention is described.
 図11は、本発明の封止用フィルムの第6実施形態を示す縦断面図、図12(a)~(c)は、図11に示す封止用フィルムを用いて電子部品搭載基板の封止方法を説明するための縦断面図である。なお、以下の説明では、説明の便宜上、図11、図12中の上側を「上」、下側を「下」と言う。 FIG. 11 is a longitudinal sectional view showing a sixth embodiment of the sealing film of the present invention, and FIGS. 12 (a) to 12 (c) show the sealing of the electronic component mounting substrate using the sealing film shown in FIG. It is a longitudinal cross-sectional view for demonstrating the stopping method. In the following description, for convenience of description, the upper side in FIGS. 11 and 12 is referred to as “upper” and the lower side is referred to as “lower”.
 以下、第6実施形態について説明するが、前記第1~第5実施形態と異なる点を中心に説明し、同様の事項についてはその説明を省略する。 Hereinafter, although the sixth embodiment will be described, the description will focus on differences from the first to fifth embodiments, and description of similar matters will be omitted.
 第6実施形態では、封止用フィルム100が備える電磁波シールド層13および被覆層14の構成が異なり、さらに、この封止用フィルム100を用いて被覆する電子部品搭載基板45の構成が異なること以外は、前記第2実施形態と同様である。 In the sixth embodiment, the configurations of the electromagnetic wave shielding layer 13 and the covering layer 14 included in the sealing film 100 are different, and further, the configuration of the electronic component mounting substrate 45 covered using the sealing film 100 is different. Is the same as in the second embodiment.
 第6実施形態の封止用フィルム100において、図11、図12に示すように、電磁波シールド層13は、絶縁層12よりも大きく形成され、その端部が絶縁層12の端部(縁部)から露出している。換言すれば、電磁波シールド層13が、絶縁層12の端部を越えて突出することで形成された突出部17(第2突出部)を備えている。さらに、被覆層14は、電磁波シールド層13よりも大きく形成され、その端部が電磁波シールド層13の端部(縁部)から露出している。換言すれば、被覆層14が、電磁波シールド層13の端部を越えて突出することで形成された突出部15(第1突出部)を備えている。 In the sealing film 100 of the sixth embodiment, as shown in FIGS. 11 and 12, the electromagnetic wave shielding layer 13 is formed larger than the insulating layer 12, and its end is the end (edge) of the insulating layer 12. ) Is exposed. In other words, the electromagnetic wave shielding layer 13 includes the protruding portion 17 (second protruding portion) formed by protruding beyond the end portion of the insulating layer 12. Furthermore, the coating layer 14 is formed larger than the electromagnetic wave shielding layer 13, and its end portion is exposed from the end portion (edge portion) of the electromagnetic wave shielding layer 13. In other words, the coating layer 14 includes the protruding portion 15 (first protruding portion) formed by protruding beyond the end portion of the electromagnetic wave shielding layer 13.
 また、第6実施形態の封止用フィルム100により被覆される電子部品搭載基板45は、図12に示すように、基板5と、基板5の上面(一方の面)側の中央部に搭載(載置)された電子部品4と、この電子部品4に電気的に接続され、基板5の上面(一方の面)側の端部に形成された電極3とを備えている。このような電子部品搭載基板45において、基板5の上面への電子部品4および電極3の搭載により、基板5上に凸部61と凹部62とからなる凹凸6が形成される。 Moreover, the electronic component mounting substrate 45 covered with the sealing film 100 of the sixth embodiment is mounted on the substrate 5 and the central portion on the upper surface (one surface) side of the substrate 5 (see FIG. 12). The electronic component 4 that is placed) and the electrode 3 that is electrically connected to the electronic component 4 and is formed at the end portion on the upper surface (one surface) side of the substrate 5 are provided. In such an electronic component mounting substrate 45, the unevenness 6 including the convex portion 61 and the concave portion 62 is formed on the substrate 5 by mounting the electronic component 4 and the electrode 3 on the upper surface of the substrate 5.
 このように電子部品4および電極3が上面側に搭載された電子部品搭載基板45に対して、絶縁層12を下側とし、被覆層14を上側にして、封止用フィルム100を用いて被覆すると、電子部品4は、絶縁層12を介して電磁波シールド層13で封止される。 Thus, the electronic component mounting substrate 45 on which the electronic component 4 and the electrode 3 are mounted on the upper surface side is covered with the sealing film 100 with the insulating layer 12 on the lower side and the coating layer 14 on the upper side. Then, the electronic component 4 is sealed with the electromagnetic wave shielding layer 13 through the insulating layer 12.
 また、本実施形態では、この封止用フィルム100を用いた被覆の際に、電磁波シールド層13は、電磁波シールド層13が備える突出部17において、絶縁層12から露出している。そのため、基板5の上面の端部52に形成された電極3に、この突出部17を接触させた状態とすることができる。したがって、この突出部17は、電磁波シールド層13で構成され導電性を有することから、得られた封止用フィルム被覆電子部品搭載基板50おいて、この電磁波シールド層13を介した電極3と外部との電気的な接続を確保することができる。なお、本実施形態では、電磁波シールド層13の上面のほぼ全面には被覆層14が形成されていることから、電磁波シールド層13を介した電極3と外部との電気的な接続を確保する場合には、被覆層14の一部を除去して電磁波シールド層13が露出する露出部を形成し、この露出部において、電磁波シールド層13と外部とを電気的に接続することで、この接続が実現される。 In this embodiment, the electromagnetic wave shielding layer 13 is exposed from the insulating layer 12 at the protrusion 17 provided in the electromagnetic wave shielding layer 13 when the sealing film 100 is used for coating. Therefore, the protruding portion 17 can be brought into contact with the electrode 3 formed on the end portion 52 on the upper surface of the substrate 5. Therefore, since the protrusion 17 is composed of the electromagnetic wave shielding layer 13 and has conductivity, in the obtained film-covered electronic component mounting substrate 50 for sealing, the electrode 3 and the outside through the electromagnetic wave shielding layer 13 are provided. Can be secured. In the present embodiment, since the coating layer 14 is formed on almost the entire upper surface of the electromagnetic wave shielding layer 13, the electrical connection between the electrode 3 and the outside via the electromagnetic wave shielding layer 13 is ensured. Is formed by removing a part of the coating layer 14 to form an exposed portion where the electromagnetic wave shielding layer 13 is exposed, and electrically connecting the electromagnetic wave shielding layer 13 and the outside at the exposed portion. Realized.
 さらに、本実施形態では、被覆層14が備える突出部15は、基板5の下面(他方の面)側に折り込むことが可能なように構成されている。そのため、基板5の下面の端部51を、この突出部15により被覆することができる。したがって、本実施形態の封止用フィルム100により、基板5の上面側ばかりでなく、基板5の下面における端部51まで被覆層14により被覆することができ、より優れた気密性をもって、電子部品搭載基板45を被覆することができる。そのため、封止用フィルム100により被覆することで得られる封止用フィルム被覆電子部品搭載基板50において、基板5上の電子部品4が湿気や埃等の外部因子と接触するのをより的確に抑制または防止することができる。 Furthermore, in this embodiment, the protrusion 15 provided in the coating layer 14 is configured to be foldable to the lower surface (the other surface) side of the substrate 5. Therefore, the end portion 51 on the lower surface of the substrate 5 can be covered with the protruding portion 15. Therefore, the sealing film 100 according to the present embodiment can cover not only the upper surface side of the substrate 5 but also the end portion 51 on the lower surface of the substrate 5 with the coating layer 14, and the electronic component with better airtightness. The mounting substrate 45 can be covered. Therefore, in the sealing film-covered electronic component mounting substrate 50 obtained by covering with the sealing film 100, the electronic component 4 on the substrate 5 is more accurately suppressed from coming into contact with external factors such as moisture and dust. Or it can be prevented.
 また、前記第1実施形態と同様に、前記軟化点における伸び率は、150%以上3500%以下である。これにより、基板5の上面側から下面側へ突出部15を折りこませることで、端部51を被覆する際に、突出部15が屈曲した屈曲部において破断してしまうのを的確に抑制または防止することができる。 Further, as in the first embodiment, the elongation at the softening point is 150% or more and 3500% or less. Thereby, by folding the protruding portion 15 from the upper surface side to the lower surface side of the substrate 5, when covering the end portion 51, it is possible to appropriately suppress or prevent the protruding portion 15 from breaking at the bent portion. Can be prevented.
 さらに、前記第1実施形態と同様に、封止用フィルム100の25℃以上80℃以下の温度範囲での線膨張率は、100ppm/K以下であることが好ましい。このように、封止用フィルム100の線膨張率を規定することによっても、基板5の上面側から下面側への突出部15の折り込みを、突出部15を屈曲させる屈曲部において破断を生じさせることなく確実に実施させることができる。 Furthermore, as in the first embodiment, the linear expansion coefficient in the temperature range of 25 ° C. to 80 ° C. of the sealing film 100 is preferably 100 ppm / K or less. Thus, by defining the linear expansion coefficient of the sealing film 100, the folding of the protruding portion 15 from the upper surface side to the lower surface side of the substrate 5 is caused to break at the bent portion that bends the protruding portion 15. It can be surely implemented without any problems.
 また、封止用フィルム100における、絶縁層12の端部を越えて突出する電磁波シールド層13の突出部17の長さは、特に限定されず、0.1cm以上5.0cm以下であることが好ましく、0.5cm以上2.5cm以下であることがより好ましい。突出部17の長さをかかる範囲内に設定することで、この突出部17により、基板5の上側に位置する電極3を被覆して、突出部17と電極3との電気的な接続を実現することができる。 In addition, the length of the protruding portion 17 of the electromagnetic wave shielding layer 13 protruding beyond the end portion of the insulating layer 12 in the sealing film 100 is not particularly limited, and may be 0.1 cm or more and 5.0 cm or less. Preferably, it is 0.5 cm or more and 2.5 cm or less. By setting the length of the projecting portion 17 within such a range, the projecting portion 17 covers the electrode 3 located on the upper side of the substrate 5 and realizes electrical connection between the projecting portion 17 and the electrode 3. can do.
 また、封止用フィルム100における、電磁波シールド層13の端部を越えて突出する被覆層14の突出部15の長さは、特に限定されず、0.1cm以上5.0cm以下であることが好ましく、0.5cm以上2.5cm以下であることがより好ましい。突出部15の長さをかかる範囲内に設定することにより、突出部15を、基板5の上面側から下面側に折り込みつつ、基板5の下面における端部51にまで到達させることができるため、突出部15による端部51の被覆を確実に実現させることができる。 Moreover, the length of the protrusion part 15 of the coating layer 14 which protrudes beyond the edge part of the electromagnetic wave shield layer 13 in the film 100 for sealing is not specifically limited, It may be 0.1 cm or more and 5.0 cm or less. Preferably, it is 0.5 cm or more and 2.5 cm or less. By setting the length of the protruding portion 15 within such a range, the protruding portion 15 can reach the end portion 51 on the lower surface of the substrate 5 while being folded from the upper surface side of the substrate 5 to the lower surface side. It is possible to reliably realize the covering of the end portion 51 by the protruding portion 15.
 [電子部品搭載基板の封止方法]
 次に、上述した第6実施形態の封止用フィルムを用いた電子部品搭載基板の封止方法について説明する。
[Method of sealing electronic component mounting board]
Next, a method for sealing an electronic component mounting substrate using the sealing film of the sixth embodiment described above will be described.
 本実施形態の電子部品搭載基板の封止方法は、基板5と電子部品4とを覆うように、絶縁層12を電子部品搭載基板45側にして封止用フィルム100を電子部品搭載基板45上に配置しつつ、突出部17を、基板5の上面(一方の面)側の電極3に接触させるとともに、突出部15を、基板5の下面(他方の面)側に折り込むことにより基板5の下面における端部51に接触させる配置工程と、封止用フィルム100を加熱し軟化させるとともに、減圧する加熱・減圧工程と、封止用フィルム100を冷却させるとともに、加圧することで、突出部17が電極3に接触し、かつ、突出部15が基板5の下面における端部51に接触した状態で、基板5と電子部品4と電極3とを封止用フィルム100で封止する冷却・加圧工程とを有する。 The electronic component mounting substrate sealing method of this embodiment is such that the sealing film 100 is placed on the electronic component mounting substrate 45 with the insulating layer 12 facing the electronic component mounting substrate 45 so as to cover the substrate 5 and the electronic component 4. The projecting portion 17 is brought into contact with the electrode 3 on the upper surface (one surface) side of the substrate 5 while the projecting portion 15 is folded on the lower surface (the other surface) side of the substrate 5. The projecting portion 17 is formed by placing the bottom surface 51 in contact with the end portion 51, heating and softening the sealing film 100, reducing the pressure, and cooling and pressurizing the sealing film 100. Is in contact with the electrode 3 and the protruding portion 15 is in contact with the end portion 51 on the lower surface of the substrate 5, and the substrate 5, the electronic component 4, and the electrode 3 are sealed with the sealing film 100. Pressure process
 以下、電子部品搭載基板の封止方法の各工程について、順次説明する。
(配置工程)
 まず、図12(a)に示すように、封止用フィルム100が備える絶縁層12、電磁波シールド層13および被覆層14のうち絶縁層12を、電子部品搭載基板45に対向させた状態で、電子部品搭載基板45が備える基板5と電子部品4と電極3とを覆うように、封止用フィルム100を電子部品搭載基板45上に配置する。
Hereafter, each process of the sealing method of an electronic component mounting substrate is demonstrated sequentially.
(Arrangement process)
First, as shown in FIG. 12A, the insulating layer 12 of the insulating film 12, the electromagnetic wave shielding layer 13, and the coating layer 14 included in the sealing film 100 is opposed to the electronic component mounting substrate 45. The sealing film 100 is disposed on the electronic component mounting substrate 45 so as to cover the substrate 5, the electronic component 4, and the electrode 3 included in the electronic component mounting substrate 45.
 この際、封止用フィルム100の中央部に位置する絶縁層12により電子部品4を被覆させ、絶縁層12の端部を越えて突出する突出部17により電極3を被覆させる。さらに、電磁波シールド層13の端部を越えて突出する被覆層14の突出部15を、基板5の下面側に折り込み、これにより、突出部15を端部51に接触させる(図12(b))。 At this time, the electronic component 4 is covered with the insulating layer 12 positioned at the center of the sealing film 100, and the electrode 3 is covered with the protruding portion 17 protruding beyond the end of the insulating layer 12. Further, the protruding portion 15 of the covering layer 14 protruding beyond the end portion of the electromagnetic wave shielding layer 13 is folded to the lower surface side of the substrate 5, thereby bringing the protruding portion 15 into contact with the end portion 51 (FIG. 12B). ).
(加熱・減圧工程)
 次に、図12(b)に示す状態を維持したまま、封止用フィルム100を加熱し軟化させるとともに、減圧する。
(Heating and decompression process)
Next, the sealing film 100 is heated and softened while maintaining the state shown in FIG.
 このように、封止用フィルム100を加熱することにより、封止用フィルム100すなわち絶縁層12、電磁波シールド層13および被覆層14が軟化し、その結果、基板5の上面側では、基板5に電子部品4および電極3を搭載することにより形成された凹凸6の形状に対して、追従し得る状態となる。さらに、基板5の下面側では、端部51を、被覆し得る状態となる。 Thus, by heating the sealing film 100, the sealing film 100, that is, the insulating layer 12, the electromagnetic wave shielding layer 13, and the coating layer 14 are softened. As a result, on the upper surface side of the substrate 5, It will be in the state which can follow the shape of the unevenness | corrugation 6 formed by mounting the electronic component 4 and the electrode 3. FIG. Furthermore, the end 51 can be covered on the lower surface side of the substrate 5.
 また、この際、電子部品搭載基板45および封止用フィルム100を、減圧雰囲気下に配置することで、封止用フィルム100の外側ばかりでなく、電子部品搭載基板45と封止用フィルム100との間の気体(空気)が脱気される。 At this time, the electronic component mounting substrate 45 and the sealing film 100 are arranged in a reduced-pressure atmosphere, so that not only the outside of the sealing film 100 but also the electronic component mounting substrate 45 and the sealing film 100 The gas (air) in between is degassed.
 これにより、封止用フィルム100が伸展しながら、基板5の上側では、凹凸6の形状、すなわち、基板5上の電子部品4および電極3の形状に若干追従した状態となり、基板5の下側では、端部51を若干被覆した状態となる。 As a result, while the sealing film 100 extends, the shape of the unevenness 6 on the upper side of the substrate 5, that is, the shape of the electronic component 4 and the electrode 3 on the substrate 5 is slightly followed. Then, the end 51 is slightly covered.
 本工程により、電子部品搭載基板45の上面側に形成された凹凸6の形状に対して、封止用フィルム100を、追従し得る状態とし、さらに、突出部15が基板5の下面側に折り込まれて、端部51を被覆し得る状態とすることができる。 By this step, the sealing film 100 can be made to follow the shape of the unevenness 6 formed on the upper surface side of the electronic component mounting substrate 45, and the protruding portion 15 is folded on the lower surface side of the substrate 5. Thus, the end 51 can be covered.
(冷却・加圧工程)
 次に、図12(c)に示すように、封止用フィルム100を冷却させるとともに、加圧する。
(Cooling / pressurization process)
Next, as shown in FIG. 12C, the sealing film 100 is cooled and pressurized.
 このように、減圧された雰囲気から加圧することで、前記加熱・減圧工程において、電子部品搭載基板45と封止用フィルム100との間が脱気され、減圧状態が維持されていることから、封止用フィルム100がさらに伸展することとなる。 Thus, by pressurizing from the decompressed atmosphere, in the heating and decompression step, the space between the electronic component mounting substrate 45 and the sealing film 100 is degassed, and the decompressed state is maintained. The sealing film 100 is further extended.
 その結果、基板5の上側では凹凸6の形状(電子部品4および電極3の形状)に優れた密着度(気密度)で追従し、さらに、端部51に対して優れた密着度で被覆した状態で、軟化した状態の封止用フィルム100により、基板5と電子部品4と電極3とが被覆される。 As a result, on the upper side of the substrate 5, the shape of the unevenness 6 (the shape of the electronic component 4 and the electrode 3) follows with an excellent degree of adhesion (air density), and further, the end 51 is covered with an excellent degree of adhesion. In this state, the substrate 5, the electronic component 4, and the electrode 3 are covered with the sealing film 100 in a softened state.
 この際、封止用フィルム100の軟化点における伸び率が150%以上3500%以下となっている。これにより、封止用フィルム100は、この加圧時に、電子部品搭載基板45に形成された凹凸6に対してより優れた形状追従性をもって伸展させることができる。そのため、軟化した状態の封止用フィルム100により、基板5の上側において基板5と電子部品4と電極3とを、さらには基板5の下側における端部51を優れた密着性をもって被覆することができる。また、基板5の上面側から下面側へ突出部15を折りこませることで端部51に接触させる際に、突出部15が屈曲した屈曲部において破断してしまうのを的確に抑制または防止することができる。 At this time, the elongation at the softening point of the sealing film 100 is 150% or more and 3500% or less. Thereby, the film 100 for sealing can be extended with the more excellent shape followability with respect to the unevenness | corrugation 6 formed in the electronic component mounting board | substrate 45 at the time of this pressurization. Therefore, the sealing film 100 in a softened state covers the substrate 5, the electronic component 4, and the electrode 3 on the upper side of the substrate 5, and further, the end portion 51 on the lower side of the substrate 5 with excellent adhesion. Can do. Further, when the protruding portion 15 is folded from the upper surface side to the lower surface side of the substrate 5 and brought into contact with the end portion 51, it is possible to accurately suppress or prevent the protruding portion 15 from breaking at the bent portion. be able to.
 そして、封止用フィルム100により、基板5と電子部品4と電極3とを優れた密着性(気密性)をもって被覆した状態で、封止用フィルム100を冷却することで、この状態を維持したまま、封止用フィルム100が固化する。 And this state was maintained by cooling the sealing film 100 in the state which coat | covered the board | substrate 5, the electronic component 4, and the electrode 3 with the outstanding adhesiveness (airtightness) with the sealing film 100. The sealing film 100 is solidified.
 これにより、電子部品搭載基板45に形成された凹凸6の形状に追従した状態で、封止用フィルム100により、基板5の上側において、絶縁層12が接触した状態で基板5と電子部品4とが被覆され、また、電磁波シールド層13が接触した状態で電極3が被覆され、さらに、基板5の下側において、折り込まれた被覆層14の突出部15が端部51を被覆した状態で封止用フィルム被覆電子部品搭載基板50が得られることとなる。そのため、この封止用フィルム被覆電子部品搭載基板50において、湿気や埃等の外部因子と電子部品4および電極3が接触するのをより的確に抑制または防止することができる。したがって、得られる封止用フィルム被覆電子部品搭載基板50ひいてはこの封止用フィルム被覆電子部品搭載基板50を備える電子機器のより信頼性の向上が図られる。 Thereby, the substrate 5 and the electronic component 4 are in contact with the insulating layer 12 on the upper side of the substrate 5 by the sealing film 100 while following the shape of the irregularities 6 formed on the electronic component mounting substrate 45. In addition, the electrode 3 is covered in a state where the electromagnetic wave shielding layer 13 is in contact, and further, the projecting portion 15 of the folded covering layer 14 is covered with the end portion 51 below the substrate 5. The stop film-covered electronic component mounting substrate 50 is obtained. Therefore, in the sealing film-covered electronic component mounting substrate 50, it is possible to more accurately suppress or prevent the external component such as moisture and dust from contacting the electronic component 4 and the electrode 3. Therefore, the reliability of the obtained electronic device including the sealing film-covered electronic component mounting substrate 50 and thus the sealing film-covered electronic component mounting substrate 50 can be improved.
 また、上記のような電子部品搭載基板45の被覆に用いられる封止用フィルム100は、絶縁層12、電磁波シールド層13および被覆層14の積層体で構成されるが、電磁波シールド層13は、その端部において、絶縁層12の端部を越えて突出することで形成された突出部17を備えている。そして、本実施形態では、この突出部17が、絶縁層12を介することなく、電極3を直接被覆する。これにより、導電性を有する突出部17(電磁波シールド層13)に電極3が電気的に接続されるため、得られる封止用フィルム被覆電子部品搭載基板50において、この突出部17を介した電極3と外部との電気的な接続を確保することが可能となる。 Further, the sealing film 100 used for covering the electronic component mounting substrate 45 as described above is composed of a laminate of the insulating layer 12, the electromagnetic wave shielding layer 13, and the covering layer 14, but the electromagnetic wave shielding layer 13 is At the end portion, a protruding portion 17 formed by protruding beyond the end portion of the insulating layer 12 is provided. In the present embodiment, the protruding portion 17 directly covers the electrode 3 without the insulating layer 12 interposed therebetween. Thereby, since the electrode 3 is electrically connected to the projecting portion 17 (electromagnetic wave shield layer 13) having conductivity, in the obtained film-covered electronic component mounting substrate 50 for sealing, the electrode via the projecting portion 17 is used. 3 and the outside can be secured.
 上記の工程を経ることで、封止用フィルム100により、基板5と電子部品4と電極3とが被覆された封止用フィルム被覆電子部品搭載基板50を得ることができる。 Through the above steps, the sealing film-covered electronic component mounting substrate 50 in which the substrate 5, the electronic component 4, and the electrode 3 are covered with the sealing film 100 can be obtained.
 <第7実施形態>
 [封止用フィルム]
 次に、本発明の封止用フィルム100の第7実施形態について説明する。
<Seventh embodiment>
[Sealing film]
Next, a seventh embodiment of the sealing film 100 of the present invention will be described.
 図13は、本発明の封止用フィルムの第7実施形態を示す縦断面図、図14(a)~(c)は、図13に示す封止用フィルムを用いて電子部品搭載基板の封止方法を説明するための縦断面図である。なお、以下の説明では、説明の便宜上、図13、図14中の上側を「上」、下側を「下」と言う。 FIG. 13 is a longitudinal sectional view showing a seventh embodiment of the sealing film of the present invention, and FIGS. 14 (a) to 14 (c) show the sealing of the electronic component mounting substrate using the sealing film shown in FIG. It is a longitudinal cross-sectional view for demonstrating the stopping method. In the following description, for convenience of description, the upper side in FIGS. 13 and 14 is referred to as “upper” and the lower side is referred to as “lower”.
 以下、第7実施形態について説明するが、前記第1~第6実施形態と異なる点を中心に説明し、同様の事項についてはその説明を省略する。 Hereinafter, the seventh embodiment will be described, but the description will focus on differences from the first to sixth embodiments, and description of similar matters will be omitted.
 第7実施形態では、封止用フィルム100が備える絶縁層12および電磁波シールド層13の構成が異なり、さらに、この封止用フィルム100を用いて被覆する電子部品搭載基板45の構成が異なること以外は、前記第2実施形態と同様である。 In the seventh embodiment, the configurations of the insulating layer 12 and the electromagnetic wave shielding layer 13 included in the sealing film 100 are different, and further, the configuration of the electronic component mounting substrate 45 covered with the sealing film 100 is different. Is the same as in the second embodiment.
 第7実施形態の封止用フィルム100において、絶縁層12および電磁波シールド層13は、図13、図14に示すように、被覆層14よりも大きく形成されている。これにより、絶縁層12および電磁波シールド層13のうち被覆層14側に位置する電磁波シールド層13の端部が被覆層14の端部(縁部)から露出している。換言すれば、電磁波シールド層13が、被覆層14の端部を越えて突出することで形成された突出部18(第4突出部)を備えている。 In the sealing film 100 of the seventh embodiment, the insulating layer 12 and the electromagnetic wave shielding layer 13 are formed larger than the covering layer 14 as shown in FIGS. Thereby, the edge part of the electromagnetic wave shielding layer 13 located in the coating layer 14 side among the insulating layer 12 and the electromagnetic wave shielding layer 13 is exposed from the edge part (edge part) of the coating layer 14. In other words, the electromagnetic wave shielding layer 13 includes the protruding portion 18 (fourth protruding portion) formed by protruding beyond the end portion of the covering layer 14.
 また、第7実施形態の封止用フィルム100により被覆される電子部品搭載基板45は、図14に示すように、基板5と、基板5の上面(一方の面)側の中央部に搭載(載置)された電子部品4と、この電子部品4に電気的に接続され、基板5の上面(一方の面)側の端部52に形成された電極3とを備えている。このような電子部品搭載基板45において、基板5の上面への電子部品4および電極3の搭載により、基板5上に凸部61と凹部62とからなる凹凸6が形成される。 Moreover, the electronic component mounting substrate 45 covered with the sealing film 100 of the seventh embodiment is mounted on the substrate 5 and a central portion on the upper surface (one surface) side of the substrate 5 (see FIG. 14). The electronic component 4 that is placed) and the electrode 3 that is electrically connected to the electronic component 4 and is formed on the end portion 52 on the upper surface (one surface) side of the substrate 5 are provided. In such an electronic component mounting substrate 45, the unevenness 6 including the convex portion 61 and the concave portion 62 is formed on the substrate 5 by mounting the electronic component 4 and the electrode 3 on the upper surface of the substrate 5.
 このように電子部品4および電極3が上面側に搭載された電子部品搭載基板45に対して、絶縁層12を下側とし、被覆層14を上側にして、封止用フィルム100を用いて被覆すると、電子部品4は、絶縁層12を介して電磁波シールド層13で封止される。 Thus, the electronic component mounting substrate 45 on which the electronic component 4 and the electrode 3 are mounted on the upper surface side is covered with the sealing film 100 with the insulating layer 12 on the lower side and the coating layer 14 on the upper side. Then, the electronic component 4 is sealed with the electromagnetic wave shielding layer 13 through the insulating layer 12.
 さらに、本実施形態では、この封止用フィルム100を用いた被覆の際に、電磁波シールド層13は、電磁波シールド層13が備える突出部18において、被覆層14から露出し、さらに、この突出部18は、突出部18と電極3とが対向し得るように、基板5の上面(一方の面)側に折り込むことが可能なように構成されている。そのため、基板5の上面の端部52に形成された電極3に、この突出部18を接触させた状態とすることができる。したがって、この突出部18は、電磁波シールド層13で構成され導電性を有することから、得られた封止用フィルム被覆電子部品搭載基板50おいて、この電磁波シールド層13を介した電極3と外部との電気的な接続を確保することができる。なお、本実施形態では、電磁波シールド層13の上面の突出部18を除くほぼ全面には被覆層14が形成されていることから、電磁波シールド層13を介した電極3と外部との電気的な接続を確保する場合には、被覆層14の一部を除去して電磁波シールド層13が露出する露出部を形成し、この露出部において、電磁波シールド層13と外部とを電気的に接続することで、この接続が実現される。 Furthermore, in the present embodiment, the electromagnetic wave shielding layer 13 is exposed from the covering layer 14 at the protruding portion 18 included in the electromagnetic wave shielding layer 13 when the sealing film 100 is used for coating. 18 is configured such that it can be folded to the upper surface (one surface) side of the substrate 5 so that the protruding portion 18 and the electrode 3 can face each other. Therefore, the protruding portion 18 can be brought into contact with the electrode 3 formed on the end portion 52 on the upper surface of the substrate 5. Therefore, since the protrusion 18 is composed of the electromagnetic wave shielding layer 13 and has conductivity, in the obtained film-covered electronic component mounting substrate 50 for sealing, the electrode 3 and the outside through the electromagnetic wave shielding layer 13 are provided. Can be secured. In the present embodiment, since the coating layer 14 is formed on almost the entire surface except the protruding portion 18 on the upper surface of the electromagnetic wave shielding layer 13, the electrical connection between the electrode 3 and the outside via the electromagnetic wave shielding layer 13 is achieved. When securing the connection, a part of the coating layer 14 is removed to form an exposed portion where the electromagnetic shielding layer 13 is exposed, and the electromagnetic shielding layer 13 and the outside are electrically connected at the exposed portion. This connection is realized.
 また、前記第1実施形態と同様に、封止用フィルム100の前記軟化点における伸び率は、150%以上3500%以下である。これにより、基板5の上面の電極3と突出部18とを対向させるために突出部18を折りこませる際に、突出部18が屈曲した屈曲部において破断してしまうのを的確に抑制または防止することができる。 Further, as in the first embodiment, the elongation at the softening point of the sealing film 100 is 150% or more and 3500% or less. Thereby, when the protrusion 18 is folded in order to make the electrode 3 on the upper surface of the substrate 5 and the protrusion 18 face each other, the protrusion 18 is accurately suppressed or prevented from breaking at the bent portion. can do.
 さらに、前記第1実施形態と同様に、封止用フィルム100の25℃以上80℃以下の温度範囲での線膨張率は、100ppm/K以下であることが好ましい。このように、封止用フィルム100の線膨張率を規定することによっても、基板5の上面の電極3と突出部18とを対向させるための突出部18の折り込みを、突出部18を屈曲させる屈曲部において破断を生じさせることなく確実に実施させることができる。 Furthermore, as in the first embodiment, the linear expansion coefficient in the temperature range of 25 ° C. to 80 ° C. of the sealing film 100 is preferably 100 ppm / K or less. Thus, by defining the linear expansion coefficient of the sealing film 100, the protrusion 18 is bent so that the electrode 3 on the upper surface of the substrate 5 faces the protrusion 18. The bending portion can be reliably carried out without causing breakage.
 また、封止用フィルム100における、被覆層14の端部を越えて突出する電磁波シールド層13の突出部18の長さは、特に限定されず、0.1cm以上5.0cm以下であることが好ましく、0.5cm以上2.5cm以下であることがより好ましい。突出部18の長さをかかる範囲内に設定することで、この突出部18により、基板5の上側に位置する電極3を被覆して、突出部18と電極3との電気的な接続を実現することができる。 Further, the length of the protruding portion 18 of the electromagnetic wave shielding layer 13 protruding beyond the end portion of the coating layer 14 in the sealing film 100 is not particularly limited, and may be 0.1 cm or more and 5.0 cm or less. Preferably, it is 0.5 cm or more and 2.5 cm or less. By setting the length of the projecting portion 18 within such a range, the projecting portion 18 covers the electrode 3 located on the upper side of the substrate 5 and realizes electrical connection between the projecting portion 18 and the electrode 3. can do.
 [電子部品搭載基板の封止方法]
 次に、上述した第7実施形態の封止用フィルムを用いた電子部品搭載基板の封止方法について説明する。
[Method of sealing electronic component mounting board]
Next, a method for sealing an electronic component mounting substrate using the sealing film of the seventh embodiment described above will be described.
 本発明の電子部品搭載基板の封止方法は、基板5と電子部品4とを覆うように、絶縁層12を電子部品搭載基板45側にして封止用フィルム100を電子部品搭載基板45上に配置しつつ、突出部18を折り込むことにより、基板5の上面(一方の面)の電極3に対向させた後に接触させる配置工程と、封止用フィルム100を加熱し軟化させるとともに、減圧する加熱・減圧工程と、封止用フィルム100を冷却させるとともに、加圧することで、突出部18が電極3に接触した状態で、基板5と電子部品4と電極3とを封止用フィルム100で封止する冷却・加圧工程とを有する。 In the method for sealing an electronic component mounting substrate of the present invention, the sealing film 100 is placed on the electronic component mounting substrate 45 with the insulating layer 12 facing the electronic component mounting substrate 45 so as to cover the substrate 5 and the electronic component 4. While disposing, the projecting portion 18 is folded, and the disposing step for contacting the electrode 3 on the upper surface (one surface) of the substrate 5 is brought into contact, and the sealing film 100 is heated and softened, and the heating is performed to reduce the pressure. -The substrate 5, the electronic component 4, and the electrode 3 are sealed with the sealing film 100 in a state where the projecting portion 18 is in contact with the electrode 3 by cooling and pressurizing the sealing film 100. Cooling / pressurizing step to stop.
 以下、電子部品搭載基板の封止方法の各工程について、順次説明する。
(配置工程)
 まず、図14(a)に示すように、封止用フィルム100が備える絶縁層12、電磁波シールド層13および被覆層14のうち絶縁層12を、電子部品搭載基板45に対向させた状態で、電子部品搭載基板45が備える基板5と電子部品4と電極3とを覆うように、封止用フィルム100を電子部品搭載基板45上に配置する。
Hereafter, each process of the sealing method of an electronic component mounting substrate is demonstrated sequentially.
(Arrangement process)
First, as shown in FIG. 14A, the insulating layer 12 of the insulating film 12, the electromagnetic wave shielding layer 13, and the coating layer 14 included in the sealing film 100 is opposed to the electronic component mounting substrate 45. The sealing film 100 is disposed on the electronic component mounting substrate 45 so as to cover the substrate 5, the electronic component 4, and the electrode 3 included in the electronic component mounting substrate 45.
 この際、封止用フィルム100の絶縁層12により電子部品4を被覆させ、被覆層14の端部を越えて突出する突出部18を折り込むことで、この突出部18により電極3を被覆させる(図14(b))。 At this time, the electronic component 4 is covered with the insulating layer 12 of the sealing film 100, and the protruding portion 18 protruding beyond the end portion of the covering layer 14 is folded to cover the electrode 3 with the protruding portion 18 ( FIG. 14 (b)).
(加熱・減圧工程)
 次に、図14(b)に示す状態を維持したまま、封止用フィルム100を加熱し軟化させるとともに、減圧する。
(Heating and decompression process)
Next, the sealing film 100 is heated and softened while maintaining the state shown in FIG.
 このように、封止用フィルム100を加熱することにより、封止用フィルム100すなわち絶縁層12、電磁波シールド層13および被覆層14が軟化し、その結果、基板5の上面側では、基板5に電子部品4および電極3を搭載することにより形成された凹凸6の形状に対して、追従し得る状態となる。 Thus, by heating the sealing film 100, the sealing film 100, that is, the insulating layer 12, the electromagnetic wave shielding layer 13, and the coating layer 14 are softened. As a result, on the upper surface side of the substrate 5, It will be in the state which can follow the shape of the unevenness | corrugation 6 formed by mounting the electronic component 4 and the electrode 3. FIG.
 また、この際、電子部品搭載基板45および封止用フィルム100を、減圧雰囲気下に配置することで、封止用フィルム100の外側ばかりでなく、電子部品搭載基板45と封止用フィルム100との間の気体(空気)が脱気される。 At this time, the electronic component mounting substrate 45 and the sealing film 100 are arranged in a reduced-pressure atmosphere, so that not only the outside of the sealing film 100 but also the electronic component mounting substrate 45 and the sealing film 100 The gas (air) in between is degassed.
 これにより、封止用フィルム100が伸展しながら、基板5の上側では、電極3と突出部18とが接触したまま、凹凸6の形状、すなわち、基板5上の電子部品4および電極3の形状に若干追従した状態となる。 Thereby, while the sealing film 100 is extended, the shape of the projections and depressions 6, that is, the shape of the electronic component 4 and the electrode 3 on the substrate 5, while the electrode 3 and the protrusion 18 are in contact with each other on the upper side of the substrate 5. It will be in the state which followed slightly.
 本工程により、電子部品搭載基板45の上面側に形成された凹凸6の形状に対して、封止用フィルム100を、追従し得る状態とすることができる。 By this step, the sealing film 100 can be made to follow the shape of the irregularities 6 formed on the upper surface side of the electronic component mounting substrate 45.
(冷却・加圧工程)
 次に、図14(c)に示すように、封止用フィルム100を冷却させるとともに、加圧する。
(Cooling / pressurization process)
Next, as shown in FIG. 14C, the sealing film 100 is cooled and pressurized.
 このように、減圧された雰囲気から加圧することで、前記加熱・減圧工程において、電子部品搭載基板45と封止用フィルム100との間が脱気され、減圧状態が維持されていることから、封止用フィルム100がさらに伸展することとなる。 Thus, by pressurizing from the decompressed atmosphere, in the heating and decompression step, the space between the electronic component mounting substrate 45 and the sealing film 100 is degassed, and the decompressed state is maintained. The sealing film 100 is further extended.
 その結果、基板5の上側では凹凸6の形状(電子部品4および電極3の形状)に優れた密着度(気密度)で追従した状態で、軟化した状態の封止用フィルム100により、基板5と電子部品4と電極3とが被覆される。 As a result, on the upper side of the substrate 5, the substrate 5 is sealed by the softened sealing film 100 in a state in which the shape of the unevenness 6 (the shape of the electronic component 4 and the electrode 3) is followed with excellent adhesion (air density). The electronic component 4 and the electrode 3 are covered.
 この際、封止用フィルム100の軟化点における伸び率が150%以上3500%以下となっている。これにより、封止用フィルム100は、この加圧時に、電子部品搭載基板45に形成された凹凸6に対してより優れた形状追従性をもって伸展させることができる。そのため、軟化した状態の封止用フィルム100により、基板5の上側において基板5と電子部品4と電極3とを優れた密着性をもって被覆することができる。また、突出部18を折りこませることで電極3に対向させた後、接触させる際に、突出部18が屈曲した屈曲部において破断してしまうのを的確に抑制または防止することができる。 At this time, the elongation at the softening point of the sealing film 100 is 150% or more and 3500% or less. Thereby, the film 100 for sealing can be extended with the more excellent shape followability with respect to the unevenness | corrugation 6 formed in the electronic component mounting board | substrate 45 at the time of this pressurization. Therefore, the substrate 5, the electronic component 4, and the electrode 3 can be coated with excellent adhesion on the upper side of the substrate 5 by the softened sealing film 100. Further, when the projecting portion 18 is folded and opposed to the electrode 3, when the projecting portion 18 is brought into contact with the electrode 3, the projecting portion 18 can be accurately suppressed or prevented from being broken at the bent portion.
 そして、封止用フィルム100により、基板5と電子部品4と電極3とを優れた密着性(気密性)をもって被覆した状態で、封止用フィルム100を冷却することで、この状態を維持したまま、封止用フィルム100が固化する。 And this state was maintained by cooling the sealing film 100 in the state which coat | covered the board | substrate 5, the electronic component 4, and the electrode 3 with the outstanding adhesiveness (airtightness) with the sealing film 100. The sealing film 100 is solidified.
 これにより、電子部品搭載基板45に形成された凹凸6の形状に追従した状態で、封止用フィルム100により、基板5の上側において、絶縁層12が接触した状態で基板5と電子部品4とが被覆され、さらに、電磁波シールド層13が接触した状態で電極3が被覆された封止用フィルム被覆電子部品搭載基板50が得られることとなる。そのため、この封止用フィルム被覆電子部品搭載基板50において、湿気や埃等の外部因子と電子部品4および電極3が接触するのを的確に抑制または防止することができる。したがって、得られる封止用フィルム被覆電子部品搭載基板50ひいてはこの封止用フィルム被覆電子部品搭載基板50を備える電子機器の信頼性の向上が図られる。 Thereby, the substrate 5 and the electronic component 4 are in contact with the insulating layer 12 on the upper side of the substrate 5 by the sealing film 100 while following the shape of the irregularities 6 formed on the electronic component mounting substrate 45. In addition, a sealing film-covered electronic component mounting substrate 50 in which the electrode 3 is coated in a state where the electromagnetic wave shielding layer 13 is in contact with the substrate is obtained. Therefore, in this film-covered electronic component mounting substrate 50 for sealing, it is possible to accurately suppress or prevent the external component such as moisture and dust from contacting the electronic component 4 and the electrode 3. Accordingly, the reliability of the obtained electronic device including the sealing film-covered electronic component mounting substrate 50 and thus the sealing film-covered electronic component mounting substrate 50 can be improved.
 また、上記のような電子部品搭載基板45の被覆に用いられる封止用フィルム100は、絶縁層12、電磁波シールド層13および被覆層14の積層体で構成されるが、電磁波シールド層13は、その端部において、被覆層14の端部を越えて突出することで形成された突出部18を備えている。そして、本実施形態では、この突出部18が、被覆層14を介することなく、電極3を直接被覆する。これにより、導電性を有する突出部18(電磁波シールド層13)に電極3が電気的に接続されるため、得られる封止用フィルム被覆電子部品搭載基板50において、この突出部18を介した電極3と外部との電気的な接続を確保することが可能となる。 Further, the sealing film 100 used for covering the electronic component mounting substrate 45 as described above is composed of a laminate of the insulating layer 12, the electromagnetic wave shielding layer 13, and the covering layer 14, but the electromagnetic wave shielding layer 13 is At the end portion, a protruding portion 18 formed by protruding beyond the end portion of the coating layer 14 is provided. In the present embodiment, the protruding portion 18 directly covers the electrode 3 without the covering layer 14 being interposed. Thereby, since the electrode 3 is electrically connected to the projecting portion 18 (electromagnetic wave shield layer 13) having conductivity, in the obtained film-covered electronic component mounting substrate 50 for sealing, the electrode via the projecting portion 18 is used. 3 and the outside can be secured.
 上記の工程を経ることで、封止用フィルム100により、基板5と電子部品4と電極3とが被覆された封止用フィルム被覆電子部品搭載基板50を得ることができる。 Through the above steps, the sealing film-covered electronic component mounting substrate 50 in which the substrate 5, the electronic component 4, and the electrode 3 are covered with the sealing film 100 can be obtained.
 <第8実施形態>
 次に、本発明の封止用フィルム100の第8実施形態について説明する。
<Eighth Embodiment>
Next, 8th Embodiment of the film 100 for sealing of this invention is described.
 図15は、本発明の封止用フィルムの第8実施形態を示す縦断面図、図16(a)~(c)は、図15に示す封止用フィルムを用いて電子部品搭載基板の封止方法を説明するための縦断面図である。なお、以下の説明では、説明の便宜上、図15、図16中の上側を「上」、下側を「下」と言う。 FIG. 15 is a longitudinal sectional view showing an eighth embodiment of the sealing film of the present invention, and FIGS. 16 (a) to 16 (c) show the sealing of the electronic component mounting substrate using the sealing film shown in FIG. It is a longitudinal cross-sectional view for demonstrating the stopping method. In the following description, for convenience of description, the upper side in FIGS. 15 and 16 is referred to as “upper” and the lower side is referred to as “lower”.
 以下、第8実施形態について説明するが、前記第1~第7実施形態と異なる点を中心に説明し、同様の事項についてはその説明を省略する。 Hereinafter, although the eighth embodiment will be described, the description will focus on differences from the first to seventh embodiments, and description of similar matters will be omitted.
 第8実施形態では、封止用フィルム100が備える電磁波シールド層13および被覆層14の構成が異なり、さらに、この封止用フィルム100を用いて被覆する電子部品搭載基板45の構成が異なること以外は、前記第1実施形態と同様である。 In the eighth embodiment, the configurations of the electromagnetic wave shielding layer 13 and the covering layer 14 included in the sealing film 100 are different, and further, the configuration of the electronic component mounting substrate 45 covered using the sealing film 100 is different. Is the same as in the first embodiment.
 第8実施形態の封止用フィルム100において、電磁波シールド層13および被覆層14は、図15、図16に示すように、絶縁層12よりも大きく形成されている。これにより、電磁波シールド層13および被覆層14のうち絶縁層12側に位置する電磁波シールド層13の端部が絶縁層12の端部(縁部)から露出している。換言すれば、電磁波シールド層13、絶縁層12の端部を越えて突出することで形成された突出部17(第2突出部)を備えている。 In the sealing film 100 of the eighth embodiment, the electromagnetic wave shielding layer 13 and the covering layer 14 are formed larger than the insulating layer 12 as shown in FIGS. Thereby, the edge part of the electromagnetic wave shielding layer 13 located in the insulating layer 12 side among the electromagnetic wave shielding layer 13 and the coating layer 14 is exposed from the edge part (edge part) of the insulating layer 12. In other words, the electromagnetic wave shielding layer 13 and the protruding portion 17 (second protruding portion) formed by protruding beyond the end portions of the insulating layer 12 are provided.
 また、第8実施形態の封止用フィルム100により被覆される電子部品搭載基板45は、図16に示すように、基板5と、基板5の上面(一方の面)側の中央部に搭載(載置)された電子部品4と、この電子部品4に電気的に接続され、基板5の下面(他方の面)側の端部51に形成された電極3とを備えている。このような電子部品搭載基板45において、基板5の上面への電子部品4の搭載により、基板5上に凸部61と凹部62とからなる凹凸6が形成される。 Moreover, the electronic component mounting substrate 45 covered with the sealing film 100 of the eighth embodiment is mounted on the substrate 5 and the central portion on the upper surface (one surface) side of the substrate 5 (see FIG. 16). The electronic component 4 that is placed) and the electrode 3 that is electrically connected to the electronic component 4 and formed on the end 51 on the lower surface (the other surface) side of the substrate 5 are provided. In such an electronic component mounting substrate 45, the mounting of the electronic component 4 on the upper surface of the substrate 5 forms the unevenness 6 including the convex portions 61 and the concave portions 62 on the substrate 5.
 このように電子部品4および電極3が上面側に搭載された電子部品搭載基板45に対して、絶縁層12を下側とし、被覆層14を上側にして、封止用フィルム100を用いて被覆すると、電子部品4は、絶縁層12を介して電磁波シールド層13で封止される。 Thus, the electronic component mounting substrate 45 on which the electronic component 4 and the electrode 3 are mounted on the upper surface side is covered with the sealing film 100 with the insulating layer 12 on the lower side and the coating layer 14 on the upper side. Then, the electronic component 4 is sealed with the electromagnetic wave shielding layer 13 through the insulating layer 12.
 さらに、本実施形態では、この封止用フィルム100を用いた被覆の際に、電磁波シールド層13が備える突出部17は、基板5の下面側に折り込むことが可能なように構成されている。そのため、基板5の下面の端部51に形成された電極3に、この突出部17を接触させた状態とすることができる。したがって、この突出部17は、電磁波シールド層13で構成され導電性を有することから、得られた封止用フィルム被覆電子部品搭載基板50において、この電磁波シールド層13を介した電極3と外部との電気的な接続を確保することができる。なお、本実施形態では、電磁波シールド層13の上面のほぼ全面には被覆層14が形成されていることから、電磁波シールド層13を介した電極3と外部との電気的な接続を確保する場合には、被覆層14の一部を除去して電磁波シールド層13が露出する露出部を形成し、この露出部において、電磁波シールド層13と外部とを電気的に接続することで、この接続が実現される。 Furthermore, in the present embodiment, the projecting portion 17 provided in the electromagnetic wave shielding layer 13 is configured to be able to be folded to the lower surface side of the substrate 5 when the sealing film 100 is used for coating. Therefore, the protruding portion 17 can be brought into contact with the electrode 3 formed on the end portion 51 on the lower surface of the substrate 5. Therefore, since this protrusion part 17 is comprised with the electromagnetic wave shield layer 13 and has electroconductivity, in the obtained film-covered electronic component mounting substrate 50 for sealing, the electrode 3 via the electromagnetic wave shield layer 13 and the outside The electrical connection can be ensured. In the present embodiment, since the coating layer 14 is formed on almost the entire upper surface of the electromagnetic wave shielding layer 13, the electrical connection between the electrode 3 and the outside via the electromagnetic wave shielding layer 13 is ensured. Is formed by removing a part of the coating layer 14 to form an exposed portion where the electromagnetic wave shielding layer 13 is exposed, and electrically connecting the electromagnetic wave shielding layer 13 and the outside at the exposed portion. Realized.
 また、前記第1実施形態と同様に、前記軟化点における伸び率は、150%以上3500%以下である。これにより、基板5の上面側から下面側へ突出部17を折りこませることで、端部51に設けられた電極3を被覆する際に、突出部17が屈曲した屈曲部において破断してしまうのを的確に抑制または防止することができる。 Further, as in the first embodiment, the elongation at the softening point is 150% or more and 3500% or less. Thereby, when the protrusion 17 is folded from the upper surface side to the lower surface side of the substrate 5, when the electrode 3 provided on the end portion 51 is covered, the bent portion is broken at the bent portion. Can be accurately suppressed or prevented.
 さらに、前記第1実施形態と同様に、封止用フィルム100の25℃以上80℃以下の温度範囲での線膨張率は、100ppm/K以下であることが好ましい。このように、封止用フィルム100の線膨張率を規定することによっても、基板5の上面側から下面側への突出部17の折り込みを、突出部17を屈曲させる屈曲部において破断を生じさせることなく確実に実施させることができる。 Furthermore, as in the first embodiment, the linear expansion coefficient in the temperature range of 25 ° C. to 80 ° C. of the sealing film 100 is preferably 100 ppm / K or less. Thus, by defining the linear expansion coefficient of the sealing film 100, the folding of the protruding portion 17 from the upper surface side to the lower surface side of the substrate 5 is caused to break at the bent portion that bends the protruding portion 17. It can be surely implemented without any problems.
 また、封止用フィルム100における、絶縁層12の端部を越えて突出する電磁波シールド層13の突出部17の長さは、特に限定されず、0.5cm以上8.0cm以下であることが好ましく、1.0cm以上5.0cm以下であることがより好ましい。突出部17の長さをかかる範囲内に設定することにより、突出部17を、基板5の上面側から下面側に折り込みつつ、基板5の下面における端部51に形成された電極3にまで到達させることができるため、突出部17による電極3の電気的な接続を確実に実現させることができる。 In addition, the length of the protruding portion 17 of the electromagnetic wave shielding layer 13 protruding beyond the end portion of the insulating layer 12 in the sealing film 100 is not particularly limited, and may be 0.5 cm or more and 8.0 cm or less. Preferably, it is 1.0 cm or more and 5.0 cm or less. By setting the length of the projecting portion 17 within such a range, the projecting portion 17 reaches the electrode 3 formed on the end portion 51 on the lower surface of the substrate 5 while folding the projecting portion 17 from the upper surface side to the lower surface side of the substrate 5. Therefore, the electrical connection of the electrode 3 by the protrusion 17 can be reliably realized.
 [電子部品搭載基板の封止方法]
 次に、本実施形態の封止用フィルムを用いた電子部品搭載基板の封止方法について説明する。
[Method of sealing electronic component mounting board]
Next, a method for sealing an electronic component mounting substrate using the sealing film of this embodiment will be described.
 本実施形態の電子部品搭載基板の封止方法は、基板5と電子部品4とを覆うように、絶縁層12を電子部品搭載基板45側にして封止用フィルム100を電子部品搭載基板45上に配置しつつ、突出部17を、基板5の下面(他方の面)側に折り込むことにより電極3に接触させる配置工程と、封止用フィルム100を加熱し軟化させるとともに、減圧する加熱・減圧工程と、封止用フィルム100を冷却させるとともに、加圧することで、突出部17が電極3に接触した状態で、基板5と電子部品4とを封止用フィルム100で封止する冷却・加圧工程とを有する。 The electronic component mounting substrate sealing method of this embodiment is such that the sealing film 100 is placed on the electronic component mounting substrate 45 with the insulating layer 12 facing the electronic component mounting substrate 45 so as to cover the substrate 5 and the electronic component 4. And placing the protrusion 17 on the lower surface (the other surface) side of the substrate 5 to be in contact with the electrode 3, and heating / depressurizing the sealing film 100 while heating and softening the sealing film 100. Cooling / heating which seals the board | substrate 5 and the electronic component 4 with the film 100 for sealing in the state which the protrusion 17 contacted the electrode 3 while cooling the process and the film 100 for sealing. Pressure step.
 以下、電子部品搭載基板の封止方法の各工程について、順次説明する。
(配置工程)
 まず、図16(a)に示すように、封止用フィルム100が備える絶縁層12、電磁波シールド層13および被覆層14のうち絶縁層12を、電子部品搭載基板45に対向させた状態で、電子部品搭載基板45が備える基板5と電子部品4とを覆うように、封止用フィルム100を電子部品搭載基板45上に配置する。
Hereafter, each process of the sealing method of an electronic component mounting substrate is demonstrated sequentially.
(Arrangement process)
First, as shown in FIG. 16A, in the state where the insulating layer 12 of the insulating film 12, the electromagnetic wave shielding layer 13 and the covering layer 14 included in the sealing film 100 is opposed to the electronic component mounting substrate 45. The sealing film 100 is disposed on the electronic component mounting substrate 45 so as to cover the substrate 5 and the electronic component 4 included in the electronic component mounting substrate 45.
 そして、この際、絶縁層12の端部を越えて突出する突出部17を、基板5の下面側に折り込み、これにより、突出部17を電極3に接触させる(図16(b))。 At this time, the protruding portion 17 protruding beyond the end portion of the insulating layer 12 is folded to the lower surface side of the substrate 5, thereby bringing the protruding portion 17 into contact with the electrode 3 (FIG. 16B).
(加熱・減圧工程)
 次に、図16(b)に示す状態を維持したまま、封止用フィルム100を加熱し軟化させるとともに、減圧する。
(Heating and decompression process)
Next, the sealing film 100 is heated and softened while maintaining the state shown in FIG.
 このように、封止用フィルム100を加熱することにより、封止用フィルム100すなわち絶縁層12、電磁波シールド層13および被覆層14が軟化し、その結果、基板5の上面側では、基板5に電子部品4を搭載することにより形成された凹凸6の形状に対して、追従し得る状態となり、さらに、基板5の下面側では、基板5の下面の端部51に設けられた電極3の形状に対して、追従し得る状態となる。 Thus, by heating the sealing film 100, the sealing film 100, that is, the insulating layer 12, the electromagnetic wave shielding layer 13, and the coating layer 14 are softened. As a result, on the upper surface side of the substrate 5, The shape of the unevenness 6 formed by mounting the electronic component 4 can be followed, and on the lower surface side of the substrate 5, the shape of the electrode 3 provided at the end 51 on the lower surface of the substrate 5. It will be in the state which can track.
 また、この際、電子部品搭載基板45および封止用フィルム100を、減圧雰囲気下に配置することで、封止用フィルム100の外側ばかりでなく、電子部品搭載基板45と封止用フィルム100との間の気体(空気)が脱気される。 At this time, the electronic component mounting substrate 45 and the sealing film 100 are arranged in a reduced-pressure atmosphere, so that not only the outside of the sealing film 100 but also the electronic component mounting substrate 45 and the sealing film 100 The gas (air) in between is degassed.
 これにより、封止用フィルム100が伸展しながら、基板5の上側では、凹凸6の形状、すなわち、基板5上の電子部品4の形状に若干追従した状態となり、基板5の下側では、電極3の形状に若干追従した状態となる。 As a result, while the sealing film 100 is extended, the shape of the irregularities 6 on the upper side of the substrate 5, that is, the shape of the electronic component 4 on the substrate 5 is slightly followed. 3 slightly follows the shape of 3.
 本工程により、電子部品搭載基板45の上面側に形成された凹凸6の形状、および、下面側に形成された電極3の形状に対して、封止用フィルム100を、追従し得る状態とすることができる。 By this step, the sealing film 100 can follow the shape of the irregularities 6 formed on the upper surface side of the electronic component mounting substrate 45 and the shape of the electrodes 3 formed on the lower surface side. be able to.
(冷却・加圧工程)
 次に、図16(c)に示すように、封止用フィルム100を冷却させるとともに、加圧する。
(Cooling / pressurization process)
Next, as shown in FIG. 16C, the sealing film 100 is cooled and pressurized.
 このように、減圧された雰囲気から加圧することで、前記加熱・減圧工程において、電子部品搭載基板45と封止用フィルム100との間が脱気され、減圧状態が維持されていることから、封止用フィルム100がさらに伸展することとなる。 Thus, by pressurizing from the decompressed atmosphere, in the heating and decompression step, the space between the electronic component mounting substrate 45 and the sealing film 100 is degassed, and the decompressed state is maintained. The sealing film 100 is further extended.
 その結果、基板5の上側では凹凸6の形状(電子部品4の形状)、さらに、基板5の下側では電極3の形状に優れた密着度(気密度)で追従した状態で、軟化した状態の封止用フィルム100により、基板5と電子部品4と電極3とが被覆される。 As a result, the upper surface of the substrate 5 is softened while following the shape of the unevenness 6 (the shape of the electronic component 4), and the lower side of the substrate 5 with the excellent degree of adhesion (air density) of the shape of the electrode 3. The sealing film 100 covers the substrate 5, the electronic component 4, and the electrode 3.
 この際、封止用フィルム100の軟化点における伸び率が150%以上3500%以下となっている。これにより、封止用フィルム100は、この加圧時に、電子部品搭載基板45に形成された凹凸6および電極3に対してより優れた形状追従性をもって伸展させることができるため、軟化した状態の封止用フィルム100により、基板5の上側において基板5と電子部品4とを、さらには基板5の下側においては電極3を優れた密着性をもって被覆することができる。また、基板5の上面側から下面側へ突出部17を折りこませることで電極3に接触させる際に、突出部17が屈曲した屈曲部において破断してしまうのを的確に抑制または防止することができる。 At this time, the elongation at the softening point of the sealing film 100 is 150% or more and 3500% or less. Thereby, since the film 100 for sealing can be extended with the more excellent shape followability with respect to the unevenness | corrugation 6 and the electrode 3 which were formed in the electronic component mounting board | substrate 45 at the time of this pressurization, the state of the softened state The sealing film 100 can cover the substrate 5 and the electronic component 4 on the upper side of the substrate 5 and the electrode 3 on the lower side of the substrate 5 with excellent adhesion. Further, when the protruding portion 17 is folded from the upper surface side to the lower surface side of the substrate 5 to be brought into contact with the electrode 3, it is possible to accurately suppress or prevent the protruding portion 17 from being broken at the bent portion. Can do.
 そして、封止用フィルム100により、基板5と電子部品4とを、さらには電極3を優れた密着性(気密性)をもって被覆した状態で、封止用フィルム100を冷却することで、この状態を維持したまま、封止用フィルム100が固化する。 Then, the sealing film 100 is cooled in a state where the sealing film 100 covers the substrate 5 and the electronic component 4, and further the electrode 3 with excellent adhesion (airtightness). The sealing film 100 is solidified while maintaining the above.
 これにより、電子部品搭載基板45に形成された凹凸6の形状に追従した状態で、封止用フィルム100により、基板5の上側において絶縁層12が接触した状態で基板5と電子部品4とが被覆され、基板5の下側において電磁波シールド層13が接触した状態で基板5が被覆された封止用フィルム被覆電子部品搭載基板50が得られることとなる。そのため、この封止用フィルム被覆電子部品搭載基板50において、湿気や埃等の外部因子と電子部品4および電極3が接触するのをより的確に抑制または防止することができる。したがって、得られる封止用フィルム被覆電子部品搭載基板50ひいてはこの封止用フィルム被覆電子部品搭載基板50を備える電子機器のより信頼性の向上が図られる。 Thereby, the substrate 5 and the electronic component 4 are in contact with the insulating layer 12 on the upper side of the substrate 5 by the sealing film 100 while following the shape of the unevenness 6 formed on the electronic component mounting substrate 45. The sealing film-covered electronic component mounting substrate 50 covered with the substrate 5 with the electromagnetic wave shielding layer 13 in contact with the lower side of the substrate 5 is obtained. Therefore, in the sealing film-covered electronic component mounting substrate 50, it is possible to more accurately suppress or prevent the external component such as moisture and dust from contacting the electronic component 4 and the electrode 3. Therefore, the reliability of the obtained electronic device including the sealing film-covered electronic component mounting substrate 50 and thus the sealing film-covered electronic component mounting substrate 50 can be improved.
 また、上記のような電子部品搭載基板45の被覆に用いられる封止用フィルム100は、絶縁層12、電磁波シールド層13および被覆層14の積層体で構成されるが、電磁波シールド層13は、絶縁層12よりも大きく形成され、その中央部において絶縁層12が積層されるが、端部において、絶縁層12の端部を越えて突出することで形成された突出部17を備えている。そして、この突出部17が、基板5の下側に折り込まれることで電極3を直接被覆する。これにより、電極3が突出部17(電磁波シールド層13)に電気的に接続されるため、得られる封止用フィルム被覆電子部品搭載基板50において、この突出部17を介した電極3と外部との電気的な接続を確保することが可能となる。 Further, the sealing film 100 used for covering the electronic component mounting substrate 45 as described above is composed of a laminate of the insulating layer 12, the electromagnetic wave shielding layer 13, and the covering layer 14, but the electromagnetic wave shielding layer 13 is The insulating layer 12 is formed so as to be larger than the insulating layer 12, and the insulating layer 12 is laminated at the center portion thereof, but at the end portion, the protruding portion 17 formed by protruding beyond the end portion of the insulating layer 12 is provided. Then, the protruding portion 17 is folded under the substrate 5 to directly cover the electrode 3. Thereby, since the electrode 3 is electrically connected to the protrusion 17 (electromagnetic wave shield layer 13), in the obtained film-covered electronic component mounting substrate 50 for sealing, the electrode 3 and the outside through the protrusion 17 It is possible to ensure electrical connection.
 上記の工程を経ることで、封止用フィルム100により、基板5と電子部品4と電極3とが被覆された封止用フィルム被覆電子部品搭載基板50を得ることができる。 Through the above steps, the sealing film-covered electronic component mounting substrate 50 in which the substrate 5, the electronic component 4, and the electrode 3 are covered with the sealing film 100 can be obtained.
 <第9実施形態>
 [封止用フィルム]
 次に、本発明の封止用フィルム100の第9実施形態について説明する。
<Ninth Embodiment>
[Sealing film]
Next, 9th Embodiment of the film 100 for sealing of this invention is described.
 図17は、本発明の封止用フィルムの第9実施形態を示す縦断面図、図18(a)~(c)は、図17に示す封止用フィルムを用いて電子部品搭載基板の封止方法を説明するための縦断面図である。なお、以下の説明では、説明の便宜上、図17、図18中の上側を「上」、下側を「下」と言う。 FIG. 17 is a longitudinal sectional view showing a ninth embodiment of the sealing film of the present invention, and FIGS. 18 (a) to 18 (c) show the sealing of the electronic component mounting substrate using the sealing film shown in FIG. It is a longitudinal cross-sectional view for demonstrating the stopping method. In the following description, for convenience of description, the upper side in FIGS. 17 and 18 is referred to as “upper” and the lower side is referred to as “lower”.
 以下、第9実施形態について説明するが、前記第1~第8実施形態と異なる点を中心に説明し、同様の事項についてはその説明を省略する。 Hereinafter, the ninth embodiment will be described, but the description will focus on differences from the first to eighth embodiments, and description of similar matters will be omitted.
 第9実施形態では、図17、図18に示すように、封止用フィルム100が備える絶縁層12が、電磁波シールド層13よりも大きく形成されている以外は、前記第1実施形態と同様である。
 封止用フィルム100は、図17、図18に示すように、絶縁層12と、この絶縁層12の一方の面側(上面側)に積層された電磁波シールド層13とを備える積層体で構成されている。そして、絶縁層12は、電磁波シールド層13よりも大きく形成され、その端部が電磁波シールド層13の端部(縁部)から露出している。換言すれば、絶縁層が、電磁波シールド層13の端部を越えて突出することで形成された突出部16を備えている。
In the ninth embodiment, as shown in FIGS. 17 and 18, the insulating layer 12 included in the sealing film 100 is the same as the first embodiment except that the insulating layer 12 is formed larger than the electromagnetic wave shielding layer 13. is there.
As shown in FIGS. 17 and 18, the sealing film 100 is configured by a laminate including an insulating layer 12 and an electromagnetic wave shielding layer 13 laminated on one surface side (upper surface side) of the insulating layer 12. Has been. The insulating layer 12 is formed to be larger than the electromagnetic wave shielding layer 13, and its end portion is exposed from the end portion (edge portion) of the electromagnetic wave shielding layer 13. In other words, the insulating layer includes the protruding portion 16 formed by protruding beyond the end portion of the electromagnetic wave shielding layer 13.
 ここで、封止用フィルム100により被覆される電子部品搭載基板45は、本実施形態では、図18に示すように、基板5と、基板5の上面(一方の面)側の中央部に搭載(載置)された電子部品4とを備えている。このような電子部品搭載基板45において、基板5の上面への電子部品4の搭載により、基板5上に凸部61と凹部62とからなる凹凸6が形成される。なお、基板5としては、例えば、プリント配線基板が挙げられ、基板5上に搭載する電子部品4としては、例えば、半導体素子、コンデンサー、コイル、コネクターおよび抵抗等が挙げられる。 Here, in this embodiment, the electronic component mounting substrate 45 covered with the sealing film 100 is mounted on the substrate 5 and the central portion on the upper surface (one surface) side of the substrate 5 as shown in FIG. The electronic component 4 is placed (placed). In such an electronic component mounting substrate 45, the mounting of the electronic component 4 on the upper surface of the substrate 5 forms the unevenness 6 including the convex portions 61 and the concave portions 62 on the substrate 5. Examples of the substrate 5 include a printed wiring board, and examples of the electronic component 4 mounted on the substrate 5 include a semiconductor element, a capacitor, a coil, a connector, and a resistor.
 このように電子部品4が上面側に搭載された電子部品搭載基板45に対して、絶縁層12を下側とし、電磁波シールド層13を上側にして、封止用フィルム100を用いて被覆すると、電子部品4は、絶縁層12を介して電磁波シールド層13で封止される。そのため、得られた封止用フィルム被覆電子部品搭載基板50は、電子部品4への電磁波によるノイズの影響が的確に抑制または防止されたものとなる。 Thus, with respect to the electronic component mounting substrate 45 on which the electronic component 4 is mounted on the upper surface side, the insulating layer 12 is on the lower side, the electromagnetic wave shielding layer 13 is on the upper side, and the covering is performed using the sealing film 100. The electronic component 4 is sealed with an electromagnetic wave shielding layer 13 through an insulating layer 12. Therefore, in the obtained film-covered electronic component mounting substrate 50 for sealing, the influence of noise due to electromagnetic waves on the electronic component 4 is accurately suppressed or prevented.
 また、電子部品4は、電磁波シールド層13の端部を越えて突出する突出部16を備える絶縁層12を介して電磁波シールド層13により封止され、電子部品4と電磁波シールド層13との間で短絡が生じるのを的確に防止し得ることから、電磁波シールド層13は、この電子部品4に対する絶縁性が確保される。 Further, the electronic component 4 is sealed by the electromagnetic wave shielding layer 13 through the insulating layer 12 including the protruding portion 16 protruding beyond the end portion of the electromagnetic wave shielding layer 13, and the electronic component 4 is interposed between the electronic component 4 and the electromagnetic wave shielding layer 13. Therefore, the electromagnetic wave shielding layer 13 is ensured to be insulated from the electronic component 4.
 さらに、この封止用フィルム100は、JIS K 6251に準拠して求められる軟化点における伸び率が150%以上3500%以下となっている。 Furthermore, this sealing film 100 has an elongation at the softening point required in accordance with JIS K 6251 of 150% or more and 3500% or less.
 封止用フィルム100の軟化点がかかる範囲内であることにより、封止用フィルム100による電子部品搭載基板45の被覆の際に、電子部品搭載基板45が備える、凸部61と凹部62とからなる凹凸6に対して、優れた追従性をもって封止した状態で、被覆することができる。そのため、この封止用フィルム100を被覆することで得られる封止用フィルム被覆電子部品搭載基板50において、基板5上の電子部品4が湿気や埃等の外部因子と接触するのを的確に抑制または防止することができる。したがって、得られる封止用フィルム被覆電子部品搭載基板50ひいてはこの封止用フィルム被覆電子部品搭載基板50を備える電子機器の信頼性の向上が図られる。 Since the softening point of the sealing film 100 is within such a range, when the electronic component mounting substrate 45 is covered with the sealing film 100, the convex portion 61 and the concave portion 62 included in the electronic component mounting substrate 45 are provided. It can coat | cover in the state sealed with the outstanding followable | trackability with respect to the unevenness | corrugation 6 which becomes. Therefore, in the sealing film-covered electronic component mounting substrate 50 obtained by covering the sealing film 100, the electronic component 4 on the substrate 5 is accurately prevented from coming into contact with external factors such as moisture and dust. Or it can be prevented. Accordingly, the reliability of the obtained electronic device including the sealing film-covered electronic component mounting substrate 50 and thus the sealing film-covered electronic component mounting substrate 50 can be improved.
 また、封止用フィルム100の軟化点における伸び率を前記範囲内とすることにより、基板5に設けられた凹凸6における段差が具体的な大きさとして、10mm以上のように大きいものであったとしても、封止用フィルム100を凹凸6の形状に対応して追従させることができる。 In addition, by setting the elongation at the softening point of the sealing film 100 within the above range, the step in the unevenness 6 provided on the substrate 5 was as large as 10 mm or more as a specific size. Even so, the sealing film 100 can be made to follow the shape of the irregularities 6.
 ここで、本実施形態の封止用フィルム100を、上記のような構成の電磁波シールド層13と絶縁層12とを備える多層体とすることにより、封止用フィルム100の軟化点における伸び率を比較的容易に150%以上3500%以下に設定することができる。かかる伸び率は、150%以上3500%以下であればよいが、1000%以上3500%以下であることが好ましく、1000%以上2000%以下であることがより好ましい。これにより、封止用フィルム100を用いて、電子部品搭載基板45が備える凹凸6の被覆に適用した際に、凹凸6の形状に対して優れた追従性をもって封止した状態で被覆することができ、かつ、封止用フィルム100の途中で破断されるのを的確に抑制または防止することができる。 Here, the elongation at the softening point of the sealing film 100 is obtained by making the sealing film 100 of the present embodiment a multilayer body including the electromagnetic wave shielding layer 13 and the insulating layer 12 having the above-described configuration. It can be set to 150% or more and 3500% or less relatively easily. The elongation may be 150% or more and 3500% or less, but is preferably 1000% or more and 3500% or less, and more preferably 1000% or more and 2000% or less. As a result, when the sealing film 100 is used to coat the unevenness 6 included in the electronic component mounting substrate 45, it can be covered in a state of being sealed with excellent followability to the shape of the unevenness 6. It is possible to accurately suppress or prevent the sealing film 100 from being broken in the middle.
 さらに、封止用フィルム100の25℃以上80℃以下の温度範囲での線膨張率は、100ppm/K以下であることが好ましく、5ppm/K以上50ppm/K以下であることがより好ましい。封止用フィルム100の25℃以上80℃以下の温度範囲での線膨張率がこのような範囲の値であると、封止用フィルム100の加熱時において、封止用フィルム100は、優れた伸縮性を有するものとなるため、封止用フィルム100の凹凸6に対する形状追従性をより確実に向上させることができる。さらに、封止用フィルム100と、基板5、電子部品4との間で、優れた密着性を維持することができるため、電子部品搭載基板45の駆動を繰り返すことで生じる発熱に起因する封止用フィルム100の電子部品搭載基板45からの剥離をより的確に抑制または防止することができる。 Furthermore, the linear expansion coefficient in the temperature range of 25 ° C. or more and 80 ° C. or less of the sealing film 100 is preferably 100 ppm / K or less, and more preferably 5 ppm / K or more and 50 ppm / K or less. When the linear expansion coefficient in the temperature range of 25 ° C. or higher and 80 ° C. or lower of the sealing film 100 is a value in such a range, the sealing film 100 is excellent when the sealing film 100 is heated. Since it has a stretching property, the shape followability with respect to the unevenness 6 of the sealing film 100 can be improved more reliably. Furthermore, since excellent adhesiveness can be maintained between the sealing film 100, the substrate 5, and the electronic component 4, sealing caused by heat generated by repeatedly driving the electronic component mounting substrate 45 The peeling of the film for use 100 from the electronic component mounting board 45 can be suppressed or prevented more accurately.
 また、封止用フィルム100における、電磁波シールド層13の端部を越えて突出する絶縁層12の突出部16の長さは、特に限定されず、0.5cm以上2.5cm以下であることが好ましく、0.2cm以上1.5cm以下であることがより好ましい。突出部16の長さをかかる範囲内に設定することにより、電子部品4と電磁波シールド層13とが不本意に接触して、これら同士の間で短絡が生じるのをより的確に防止することができる。 Moreover, the length of the protrusion part 16 of the insulating layer 12 which protrudes beyond the edge part of the electromagnetic wave shield layer 13 in the film 100 for sealing is not specifically limited, It is 0.5 cm or more and 2.5 cm or less. Preferably, it is 0.2 cm or more and 1.5 cm or less. By setting the length of the protruding portion 16 within such a range, the electronic component 4 and the electromagnetic wave shielding layer 13 can be prevented from inadvertently contacting each other and causing a short circuit between them. it can.
 封止用フィルム100の全体としての平均厚さは、10μm以上700μm以下であることが好ましく、20μm以上400μm以下であることがより好ましい。封止用フィルム100の平均厚さをかかる範囲内に設定することにより、封止用フィルム100の途中において、封止用フィルム100が破断するのを的確に抑制または防止し得るとともに、封止用フィルム100の軟化点における伸び率を150%以上3500%以下の範囲内に確実に設定することができる。 The average thickness of the sealing film 100 as a whole is preferably 10 μm or more and 700 μm or less, and more preferably 20 μm or more and 400 μm or less. By setting the average thickness of the sealing film 100 within this range, the sealing film 100 can be accurately suppressed or prevented from breaking in the middle of the sealing film 100, and for sealing. The elongation at the softening point of the film 100 can be reliably set within a range of 150% to 3500%.
 [電子部品搭載基板の封止方法]
 次に、上述した本発明の封止用フィルムを用いた電子部品搭載基板の封止方法(本発明の電子部品搭載基板の封止方法)について説明する。
[Method of sealing electronic component mounting board]
Next, the electronic component mounting substrate sealing method (the electronic component mounting substrate sealing method of the present invention) using the above-described sealing film of the present invention will be described.
 本実施形態の電子部品搭載基板の封止方法は、基板5と電子部品4とを覆うように封止用フィルム100を電子部品搭載基板45上に配置する配置工程と、封止用フィルム100を加熱し軟化させるとともに、減圧する加熱・減圧工程と、封止用フィルム100を冷却させるとともに、加圧することで、絶縁層12を介して電磁波シールド層13により電子部品4を被覆した状態で、基板5と電子部品4とを封止用フィルム100で封止する冷却・加圧工程とを有する。 The electronic component mounting substrate sealing method of the present embodiment includes an arrangement step of disposing the sealing film 100 on the electronic component mounting substrate 45 so as to cover the substrate 5 and the electronic component 4, and the sealing film 100. In the state where the electronic component 4 is covered with the electromagnetic wave shielding layer 13 through the insulating layer 12 by heating and softening and heating / depressurizing step for reducing the pressure, cooling the sealing film 100, and applying pressure. 5 and a cooling / pressurizing step for sealing the electronic component 4 with the sealing film 100.
 以下、電子部品搭載基板の封止方法の各工程について、順次説明する。
(配置工程)
 まず、図18(a)に示すように、封止用フィルム100が備える電磁波シールド層13および絶縁層12のうち絶縁層12を、電子部品搭載基板45に対向させた状態で、電子部品搭載基板45が備える基板5と電子部品4とを覆うように、封止用フィルム100を電子部品搭載基板45上に配置する。
Hereafter, each process of the sealing method of an electronic component mounting substrate is demonstrated sequentially.
(Arrangement process)
First, as shown in FIG. 18A, the electronic component mounting substrate in a state where the insulating layer 12 of the electromagnetic wave shielding layer 13 and the insulating layer 12 included in the sealing film 100 is opposed to the electronic component mounting substrate 45. The sealing film 100 is disposed on the electronic component mounting substrate 45 so as to cover the substrate 5 and the electronic component 4 included in the electronic component 45.
(加熱・減圧工程)
 次に、図18(b)に示すように、封止用フィルム100を加熱し軟化させるとともに、減圧する。
(Heating and decompression process)
Next, as shown in FIG. 18B, the sealing film 100 is heated and softened, and the pressure is reduced.
 このように、封止用フィルム100を加熱することにより、封止用フィルム100すなわち電磁波シールド層13および絶縁層12が軟化し、その結果、基板5上に電子部品4を搭載することにより形成された凹凸6の形状に対して、追従し得る状態となる。 Thus, by heating the sealing film 100, the sealing film 100, that is, the electromagnetic wave shielding layer 13 and the insulating layer 12 are softened. As a result, the electronic film 4 is mounted on the substrate 5. It will be in the state which can be followed to the shape of the unevenness 6 which became.
 また、この際、電子部品搭載基板45および封止用フィルム100を、減圧雰囲気下に配置することで、封止用フィルム100の上側ばかりでなく、電子部品搭載基板45と封止用フィルム100との間の気体(空気)が脱気される。 At this time, the electronic component mounting substrate 45 and the sealing film 100 are arranged in a reduced-pressure atmosphere, so that not only the upper side of the sealing film 100 but also the electronic component mounting substrate 45 and the sealing film 100 The gas (air) in between is degassed.
 これにより、封止用フィルム100が伸展しながら、凹凸6の形状、すなわち、基板5上の電子部品4の形状に若干追従した状態となる。 Thereby, while the sealing film 100 extends, the shape of the unevenness 6, that is, the shape of the electronic component 4 on the substrate 5 is slightly followed.
 本工程により、電子部品搭載基板45に形成された凹凸6の形状に対して、封止用フィルム100を、追従し得る状態とすることができる。 By this step, the sealing film 100 can be made to follow the shape of the unevenness 6 formed on the electronic component mounting substrate 45.
 なお、封止用フィルム100の加熱と、雰囲気の減圧とは、加熱の後に減圧してもよく、減圧の後に加熱してもよいが、加熱と減圧とをほぼ同時に行うことが好ましい。これにより、軟化した封止用フィルム100を、凹凸6の形状に確実に若干追従した状態とすることができる。 The heating of the sealing film 100 and the reduced pressure of the atmosphere may be reduced after the heating or may be heated after the reduced pressure, but it is preferable to perform the heating and the reduced pressure almost simultaneously. Thereby, the softened film 100 for sealing can be made into the state which followed the shape of the unevenness | corrugation 6 a little reliably.
(冷却・加圧工程)
 次に、図18(c)に示すように、封止用フィルム100を冷却させるとともに、加圧する。
(Cooling / pressurization process)
Next, as shown in FIG. 18C, the sealing film 100 is cooled and pressurized.
 このように、減圧された雰囲気から加圧することで、前記加熱・減圧工程において、電子部品搭載基板45と封止用フィルム100との間が脱気され、減圧状態が維持されていることから、封止用フィルム100がさらに伸展することとなり、その結果、凹凸6の形状(電子部品4の形状)に優れた密着度(気密度)で追従した状態で、軟化した状態の封止用フィルム100により、基板5と電子部品4とが被覆される。なお、前記加熱減圧工程において、凹凸6の形状に対応して封止用フィルム100が十分追従していれば、加圧工程を省略することができる。 Thus, by pressurizing from the decompressed atmosphere, in the heating and decompression step, the space between the electronic component mounting substrate 45 and the sealing film 100 is degassed, and the decompressed state is maintained. As a result, the sealing film 100 is further extended. As a result, the sealing film 100 in a softened state follows the adhesion (air density) excellent in the shape of the unevenness 6 (the shape of the electronic component 4). Thus, the substrate 5 and the electronic component 4 are covered. In the heating and depressurizing step, the pressing step can be omitted if the sealing film 100 sufficiently follows the shape of the irregularities 6.
 この際、本発明では、封止用フィルム100の軟化点における伸び率が150%以上3500%以下となっている。そのため、封止用フィルム100は、この加圧時に、電子部品搭載基板45に形成された凹凸6に対してより優れた形状追従性をもって伸展させることができるため、軟化した状態の封止用フィルム100により、基板5と電子部品4とを優れた密着性をもって被覆することができる。 At this time, in the present invention, the elongation at the softening point of the sealing film 100 is 150% or more and 3500% or less. Therefore, since the sealing film 100 can be extended with better shape followability with respect to the unevenness 6 formed on the electronic component mounting substrate 45 during this pressurization, the sealing film in a softened state By 100, the board | substrate 5 and the electronic component 4 can be coat | covered with the outstanding adhesiveness.
 そして、封止用フィルム100により、基板5と電子部品4とを、優れた密着性(気密性)をもって被覆した状態で、封止用フィルム100を冷却することで、この状態を維持したまま、封止用フィルム100が固化する。 And in the state which coat | covered the board | substrate 5 and the electronic component 4 with the outstanding adhesiveness (airtightness) with the film 100 for sealing, by cooling the film 100 for sealing, this state is maintained, The sealing film 100 is solidified.
 これにより、電子部品搭載基板45に形成された凹凸6の形状に追従した状態で、封止用フィルム100により、基板5と電子部品4とが被覆された封止用フィルム被覆電子部品搭載基板50が得られることとなる。そのため、この封止用フィルム被覆電子部品搭載基板50において、湿気や埃等の外部因子と電子部品4が接触するのを的確に抑制または防止することができる。したがって、得られる封止用フィルム被覆電子部品搭載基板50ひいてはこの封止用フィルム被覆電子部品搭載基板50を備える電子機器の信頼性の向上が図られる。 Accordingly, the sealing film-covered electronic component mounting substrate 50 in which the substrate 5 and the electronic component 4 are covered with the sealing film 100 in a state of following the shape of the unevenness 6 formed on the electronic component mounting substrate 45. Will be obtained. Therefore, in the sealing film-covered electronic component mounting substrate 50, it is possible to accurately suppress or prevent the electronic component 4 from coming into contact with external factors such as moisture and dust. Accordingly, the reliability of the obtained electronic device including the sealing film-covered electronic component mounting substrate 50 and thus the sealing film-covered electronic component mounting substrate 50 can be improved.
 また、上記のような電子部品搭載基板45の被覆に用いられる封止用フィルム100は、絶縁層12と電磁波シールド層13との積層体で構成されるが、絶縁層12は、電磁波シールド層13よりも大きく形成され、その中央部において電磁波シールド層13が積層されるが、端部において、電磁波シールド層13の端部を越えて突出することで形成された突出部16を備えている。 The sealing film 100 used for covering the electronic component mounting substrate 45 as described above is composed of a laminate of the insulating layer 12 and the electromagnetic wave shielding layer 13, and the insulating layer 12 is composed of the electromagnetic wave shielding layer 13. The electromagnetic wave shielding layer 13 is laminated at the central portion thereof, and the projecting portion 16 formed by projecting beyond the end portion of the electromagnetic wave shielding layer 13 is provided at the end portion.
 そのため、本工程において、電磁波シールド層13は、絶縁層12の中央部を介して電子部品4を被覆し、絶縁層12の端部である突出部16には存在しない状態で被覆する。したがって、得られる封止用フィルム被覆電子部品搭載基板50を、電子部品4に対する絶縁性が確実に確保された状態で、電子部品4への電磁波によるノイズの影響が的確に抑制または防止されたものとすることができる。 Therefore, in this step, the electromagnetic wave shielding layer 13 covers the electronic component 4 through the central portion of the insulating layer 12 and covers the protruding portion 16 that is the end portion of the insulating layer 12 in a state that does not exist. Therefore, in the obtained film-covered electronic component mounting substrate 50 for sealing, in which insulation against the electronic component 4 is reliably ensured, the influence of noise due to electromagnetic waves on the electronic component 4 is accurately suppressed or prevented. It can be.
 なお、封止用フィルム100の冷却と、雰囲気の加圧とは、加圧の後に冷却してもよいが、冷却と加圧とをほぼ同時に行うことが好ましい。これにより、凹凸6の形状に対応して、封止用フィルム100をより優れた密着性をもって被覆させることができる。 In addition, although cooling of the film 100 for sealing and pressurization of an atmosphere may be cooled after pressurization, it is preferable to perform cooling and pressurization substantially simultaneously. Thereby, the film 100 for sealing can be coat | covered with the more excellent adhesiveness corresponding to the shape of the unevenness | corrugation 6. FIG.
 上記の工程を経ることで、封止用フィルム100により、基板5と電子部品4とが被覆された封止用フィルム被覆電子部品搭載基板50を得ることができる。 Through the above steps, the sealing film-covered electronic component mounting substrate 50 in which the substrate 5 and the electronic component 4 are covered with the sealing film 100 can be obtained.
 <第10実施形態>
 [封止用フィルム]
 次に、本発明の封止用フィルム100の第10実施形態について説明する。
<Tenth Embodiment>
[Sealing film]
Next, 10th Embodiment of the film 100 for sealing of this invention is described.
 図19は、本発明の封止用フィルムの第10実施形態を示す縦断面図、図20(a)~(c)は、図19に示す封止用フィルムを用いて電子部品搭載基板の封止方法を説明するための縦断面図である。なお、以下の説明では、説明の便宜上、図19、図20中の上側を「上」、下側を「下」と言う。 FIG. 19 is a longitudinal sectional view showing a tenth embodiment of a sealing film of the present invention, and FIGS. 20A to 20C are diagrams for sealing an electronic component mounting substrate using the sealing film shown in FIG. It is a longitudinal cross-sectional view for demonstrating the stopping method. In the following description, for convenience of description, the upper side in FIGS. 19 and 20 is referred to as “upper” and the lower side is referred to as “lower”.
 以下、第10実施形態について説明するが、前記第1~第9実施形態と異なる点を中心に説明し、同様の事項についてはその説明を省略する。 Hereinafter, the tenth embodiment will be described, but the description will focus on differences from the first to ninth embodiments, and description of similar matters will be omitted.
 第10実施形態では、封止用フィルム100が備える絶縁層12の構成が異なり、それ以外は、前記第9実施形態と同様である。 In the tenth embodiment, the configuration of the insulating layer 12 included in the sealing film 100 is different, and the rest is the same as in the ninth embodiment.
 第10実施形態の封止用フィルム100において、電磁波シールド層13よりも大きく形成される絶縁層12は、図19、図20に示すように、前記第9実施形態の絶縁層12と比較して、より大きく(面方向に沿って長く)形成されている。これにより、電磁波シールド層13の端部を越えて突出することで形成された突出部16(第1突出部)は、この封止用フィルム100を用いた被覆の際に、基板5の下面(他方の面)側に折り込むことが可能となる。そのため、基板5の下面の端部51を、この突出部16により被覆することができる。したがって、本実施形態の封止用フィルム100により、基板5の上面側ばかりでなく、基板5の下面における端部51まで絶縁層12により被覆することができ、より優れた気密性をもって、電子部品搭載基板45を被覆することができる。そのため、封止用フィルム100により被覆することで得られる封止用フィルム被覆電子部品搭載基板50において、基板5上の電子部品4が湿気や埃等の外部因子と接触するのをより的確に抑制または防止することができる。 In the sealing film 100 of the tenth embodiment, the insulating layer 12 formed larger than the electromagnetic wave shielding layer 13 is compared with the insulating layer 12 of the ninth embodiment, as shown in FIGS. 19 and 20. And larger (longer along the surface direction). Thereby, the protrusion 16 (first protrusion) formed by protruding beyond the end portion of the electromagnetic wave shielding layer 13 is formed on the lower surface of the substrate 5 (when the sealing film 100 is coated). It becomes possible to fold to the other surface side. Therefore, the end portion 51 on the lower surface of the substrate 5 can be covered with the protruding portion 16. Therefore, the sealing film 100 according to the present embodiment can cover not only the upper surface side of the substrate 5 but also the end portion 51 on the lower surface of the substrate 5 with the insulating layer 12, so that the electronic component has better airtightness. The mounting substrate 45 can be covered. Therefore, in the sealing film-covered electronic component mounting substrate 50 obtained by covering with the sealing film 100, the electronic component 4 on the substrate 5 is more accurately suppressed from coming into contact with external factors such as moisture and dust. Or it can be prevented.
 また、封止用フィルム100の前記軟化点における伸び率が150%以上3500%以下となっていることにより、基板5の上面側から下面側へ突出部16を折り込ませることで、端部51を被覆する際に、突出部16が屈曲した屈曲部において破断してしまうのを的確に抑制または防止することができる。 Further, when the elongation at the softening point of the sealing film 100 is 150% or more and 3500% or less, the end portion 51 is formed by folding the protruding portion 16 from the upper surface side to the lower surface side of the substrate 5. When covering, it is possible to accurately suppress or prevent the protrusion 16 from being broken at the bent portion.
 さらに、前記第1実施形態と同様に、封止用フィルム100の25℃以上80℃以下の温度範囲での線膨張率は、100ppm/K以下であることが好ましい。このように、封止用フィルム100の線膨張率を規定することによっても、基板5の上面側から下面側への突出部16の折り込みを、突出部16を屈曲させる屈曲部において破断を生じさせることなく確実に実施させることができる。 Furthermore, as in the first embodiment, the linear expansion coefficient in the temperature range of 25 ° C. to 80 ° C. of the sealing film 100 is preferably 100 ppm / K or less. Thus, by defining the linear expansion coefficient of the sealing film 100, the folding of the protruding portion 16 from the upper surface side to the lower surface side of the substrate 5 is caused to break at the bent portion that bends the protruding portion 16. It can be surely implemented without any problems.
 また、封止用フィルム100における、電磁波シールド層13の端部を越えて突出する絶縁層12の突出部16の長さは、特に限定されず、0.1cm以上5.0cm以下であることが好ましく、0.5cm以上2.5cm以下であることがより好ましい。突出部16の長さをかかる範囲内に設定することにより、突出部16を、基板5の上面側から下面側に折り込みつつ、基板5の下面における端部51にまで到達させることができるため、突出部16による端部51の被覆を確実に実現させることができる。 Moreover, the length of the protrusion part 16 of the insulating layer 12 which protrudes beyond the edge part of the electromagnetic wave shield layer 13 in the film 100 for sealing is not specifically limited, It may be 0.1 cm or more and 5.0 cm or less. Preferably, it is 0.5 cm or more and 2.5 cm or less. By setting the length of the protrusion 16 within such a range, the protrusion 16 can reach the end 51 on the lower surface of the substrate 5 while being folded from the upper surface side to the lower surface side of the substrate 5. It is possible to reliably realize the covering of the end portion 51 by the protruding portion 16.
 {電子部品搭載基板の封止方法}
 次に、上述した第10実施形態の封止用フィルムを用いた電子部品搭載基板の封止方法について説明する。
{Method for sealing electronic component mounting substrate}
Next, a method for sealing an electronic component mounting board using the sealing film of the tenth embodiment described above will be described.
 本実施形態の電子部品搭載基板の封止方法は、基板5と電子部品4とを覆うように、絶縁層12を電子部品搭載基板45側にして封止用フィルム100を電子部品搭載基板45上に配置しつつ、突出部16を、基板5の下面(他方の面)側に折り込むことにより基板5の下面における端部51に接触させる配置工程と、封止用フィルム100を加熱し軟化させるとともに、減圧する加熱・減圧工程と、封止用フィルム100を冷却させるとともに、加圧することで、絶縁層12を介して電磁波シールド層13により電子部品4を被覆し、かつ、突出部16が基板5の下面における端部51に接触した状態で、基板5と電子部品4とを封止用フィルム100で封止する冷却・加圧工程とを有する。 The electronic component mounting substrate sealing method of this embodiment is such that the sealing film 100 is placed on the electronic component mounting substrate 45 with the insulating layer 12 facing the electronic component mounting substrate 45 so as to cover the substrate 5 and the electronic component 4. And placing the projecting portion 16 on the lower surface (the other surface) side of the substrate 5 to be brought into contact with the end portion 51 on the lower surface of the substrate 5, and heating and softening the sealing film 100. The heating / depressurization step for reducing the pressure, and cooling and pressurizing the sealing film 100 cover the electronic component 4 with the electromagnetic wave shielding layer 13 through the insulating layer 12, and the protrusion 16 is formed on the substrate 5. A cooling / pressurizing step of sealing the substrate 5 and the electronic component 4 with the sealing film 100 while being in contact with the end portion 51 on the lower surface of the substrate.
 以下、電子部品搭載基板の封止方法の各工程について、順次説明する。
(配置工程)
 まず、図20(a)に示すように、封止用フィルム100が備える絶縁層12および電磁波シールド層13のうち絶縁層12を、電子部品搭載基板45に対向させた状態で、電子部品搭載基板45が備える基板5と電子部品4とを覆うように、封止用フィルム100を電子部品搭載基板45上に配置する。
Hereafter, each process of the sealing method of an electronic component mounting substrate is demonstrated sequentially.
(Arrangement process)
First, as shown in FIG. 20A, the electronic component mounting board in the state where the insulating layer 12 of the insulating film 12 and the electromagnetic wave shielding layer 13 included in the sealing film 100 is opposed to the electronic component mounting board 45. The sealing film 100 is disposed on the electronic component mounting substrate 45 so as to cover the substrate 5 and the electronic component 4 included in the electronic component 45.
 そして、この際、電磁波シールド層13の端部を越えて突出する絶縁層12の突出部16を、基板5の下面側に折り込み、これにより、突出部16を端部51に接触させる(図20(b))。 At this time, the protruding portion 16 of the insulating layer 12 protruding beyond the end portion of the electromagnetic wave shielding layer 13 is folded to the lower surface side of the substrate 5, thereby bringing the protruding portion 16 into contact with the end portion 51 (FIG. 20). (B)).
(加熱・減圧工程)
 次に、図20(b)に示す状態を維持したまま、封止用フィルム100を加熱し軟化させるとともに、減圧する。
(Heating and decompression process)
Next, the sealing film 100 is heated and softened while maintaining the state shown in FIG.
 このように、封止用フィルム100を加熱することにより、封止用フィルム100すなわち絶縁層12および電磁波シールド層13が軟化し、その結果、基板5の上面側では、基板5に電子部品4を搭載することにより形成された凹凸6の形状に対して、追従し得る状態となり、さらに、基板5の下面側では、端部51を、被覆し得る状態となる。 Thus, by heating the sealing film 100, the sealing film 100, that is, the insulating layer 12 and the electromagnetic wave shielding layer 13 are softened. As a result, the electronic component 4 is attached to the substrate 5 on the upper surface side of the substrate 5. It will be in the state which can follow the shape of the unevenness | corrugation 6 formed by mounting, and also will be in the state which can coat | cover the edge part 51 in the lower surface side of the board | substrate 5. FIG.
 また、この際、電子部品搭載基板45および封止用フィルム100を、減圧雰囲気下に配置することで、封止用フィルム100の外側ばかりでなく、電子部品搭載基板45と封止用フィルム100との間の気体(空気)が脱気される。 At this time, the electronic component mounting substrate 45 and the sealing film 100 are arranged in a reduced-pressure atmosphere, so that not only the outside of the sealing film 100 but also the electronic component mounting substrate 45 and the sealing film 100 The gas (air) in between is degassed.
 これにより、封止用フィルム100が伸展しながら、基板5の上側では、凹凸6の形状、すなわち、基板5上の電子部品4の形状に若干追従した状態となり、基板5の下側では、端部51を若干被覆した状態となる。 Thereby, while the sealing film 100 is extended, the shape of the unevenness 6 on the upper side of the substrate 5, that is, the shape of the electronic component 4 on the substrate 5 is slightly followed. The part 51 is slightly covered.
 本工程により、封止用フィルム100を、電子部品搭載基板45の上面側に形成された凹凸6の形状に追従し得る状態とし、さらに、突出部16が基板5の下面側に折り込まれて、端部51を被覆し得る状態とすることができる。 By this step, the sealing film 100 can be made to follow the shape of the unevenness 6 formed on the upper surface side of the electronic component mounting substrate 45, and the protruding portion 16 is folded on the lower surface side of the substrate 5, The end portion 51 can be covered.
(冷却・加圧工程)
 次に、図20(c)に示すように、封止用フィルム100を冷却させるとともに、加圧する。
(Cooling / pressurization process)
Next, as shown in FIG. 20C, the sealing film 100 is cooled and pressurized.
 このように、減圧された雰囲気から加圧することで、前記加熱・減圧工程において、電子部品搭載基板45と封止用フィルム100との間が脱気され、減圧状態が維持されていることから、封止用フィルム100がさらに伸展することとなる。 Thus, by pressurizing from the decompressed atmosphere, in the heating and decompression step, the space between the electronic component mounting substrate 45 and the sealing film 100 is degassed, and the decompressed state is maintained. The sealing film 100 is further extended.
 その結果、基板5の上側では凹凸6の形状(電子部品4の形状)に対して優れた密着度(気密度)で追従し、さらに、端部51に対して優れた密着度で被覆した状態で、軟化した状態の封止用フィルム100により、基板5と電子部品4とが被覆される。 As a result, the upper side of the substrate 5 follows the shape of the unevenness 6 (the shape of the electronic component 4) with an excellent degree of adhesion (air density), and further covers the end portion 51 with an excellent degree of adhesion. Thus, the substrate 5 and the electronic component 4 are covered with the sealing film 100 in a softened state.
 この際、本実施形態では、封止用フィルム100の軟化点における伸び率が150%以上3500%以下となっている。これにより、封止用フィルム100は、この加圧時に、電子部品搭載基板45に形成された凹凸6に対してより優れた形状追従性をもって伸展させることができるため、軟化した状態の封止用フィルム100により、基板5の上側において基板5と電子部品4とを、さらには端部51を優れた密着性をもって被覆することができる。また、基板5の上面側から下面側へ突出部16を折り込ませることで端部51に接触させる際に、突出部16が屈曲した屈曲部において破断してしまうのを的確に抑制または防止することができる。 At this time, in this embodiment, the elongation at the softening point of the sealing film 100 is 150% or more and 3500% or less. Thereby, since the film 100 for sealing can be extended with the more excellent shape followable | trackability with respect to the unevenness | corrugation 6 formed in the electronic component mounting board | substrate 45 at the time of this pressurization, for the sealing of the softened state The film 100 can cover the substrate 5 and the electronic component 4 on the upper side of the substrate 5 and the end portion 51 with excellent adhesion. Further, when the protruding portion 16 is folded from the upper surface side to the lower surface side of the substrate 5 to be brought into contact with the end portion 51, the protruding portion 16 is accurately suppressed or prevented from breaking at the bent portion. Can do.
 そして、封止用フィルム100により、基板5と電子部品4とを、さらには端部51を優れた密着性(気密性)をもって被覆した状態で、封止用フィルム100を冷却することで、この状態を維持したまま、封止用フィルム100が固化する。 Then, the sealing film 100 is cooled with the sealing film 100 in a state where the substrate 5 and the electronic component 4 are covered with the end 51 with excellent adhesion (airtightness). The sealing film 100 is solidified while maintaining the state.
 これにより、電子部品搭載基板45に形成された凹凸6の形状に追従した状態で、封止用フィルム100により、基板5の上側において、絶縁層12が接触した状態で基板5と電子部品4とが被覆され、基板5の下側において、折り込まれた絶縁層12の突出部16が端部51を被覆した状態で封止用フィルム被覆電子部品搭載基板50が得られることとなる。そのため、この封止用フィルム被覆電子部品搭載基板50において、湿気や埃等の外部因子と電子部品4が接触するのをより的確に抑制または防止することができる。したがって、得られる封止用フィルム被覆電子部品搭載基板50ひいてはこの封止用フィルム被覆電子部品搭載基板50を備える電子機器のより信頼性の向上が図られる。 Thereby, the substrate 5 and the electronic component 4 are in contact with the insulating layer 12 on the upper side of the substrate 5 by the sealing film 100 while following the shape of the irregularities 6 formed on the electronic component mounting substrate 45. The sealing film-covered electronic component mounting substrate 50 is obtained in a state where the projecting portion 16 of the folded insulating layer 12 covers the end portion 51 below the substrate 5. Therefore, in the sealing film-covered electronic component mounting substrate 50, it is possible to more accurately suppress or prevent the electronic component 4 from coming into contact with external factors such as moisture and dust. Therefore, the reliability of the obtained electronic device including the sealing film-covered electronic component mounting substrate 50 and thus the sealing film-covered electronic component mounting substrate 50 can be improved.
 上記の工程を経ることで、封止用フィルム100により、基板5と電子部品4とが被覆された封止用フィルム被覆電子部品搭載基板50を得ることができる。 Through the above steps, the sealing film-covered electronic component mounting substrate 50 in which the substrate 5 and the electronic component 4 are covered with the sealing film 100 can be obtained.
 <第11実施形態>
 [封止用フィルム]
 次に、本発明の封止用フィルム100の第11実施形態について説明する。
<Eleventh embodiment>
[Sealing film]
Next, an eleventh embodiment of the sealing film 100 of the present invention will be described.
 図21は、本発明の封止用フィルムの第11実施形態を示す縦断面図、図22(a)~(c)は、図21に示す封止用フィルムを用いて電子部品搭載基板の封止方法を説明するための縦断面図である。なお、以下の説明では、説明の便宜上、図21、図22中の上側を「上」、下側を「下」と言う。 FIG. 21 is a longitudinal sectional view showing an eleventh embodiment of a sealing film of the present invention, and FIGS. 22 (a) to 22 (c) show sealing of an electronic component mounting substrate using the sealing film shown in FIG. It is a longitudinal cross-sectional view for demonstrating the stopping method. In the following description, for convenience of description, the upper side in FIGS. 21 and 22 is referred to as “upper” and the lower side is referred to as “lower”.
 以下、第11実施形態について説明するが、前記第1~第10実施形態と異なる点を中心に説明し、同様の事項についてはその説明を省略する。 Hereinafter, the eleventh embodiment will be described, but the description will focus on differences from the first to tenth embodiments, and description of similar matters will be omitted.
 第11実施形態では、封止用フィルム100が、電磁波シールド層13の絶縁層12との反対側(上面側)に積層された被覆層14を備えており、それ以外は、前記第10実施形態と同様である。 In the eleventh embodiment, the sealing film 100 includes a coating layer 14 laminated on the opposite side (upper surface side) of the electromagnetic wave shielding layer 13 to the insulating layer 12, and other than that, the tenth embodiment. It is the same.
 第11実施形態の封止用フィルム100において、被覆層14は、図21、図22に示すように、絶縁層12と同様に、電磁波シールド層13よりも大きく形成され、その端部が電磁波シールド層13の端部(縁部)から露出している。換言すれば、被覆層14が、電磁波シールド層13の端部を越えて突出することで形成された突出部15(第2突出部)を備えている。そして、これら突出部15と突出部16とは、電磁波シールド層13の端部を越えた位置で積層することで設けられた積層突出部65を形成する。 In the sealing film 100 of the eleventh embodiment, the covering layer 14 is formed larger than the electromagnetic wave shielding layer 13 like the insulating layer 12 as shown in FIG. 21 and FIG. It is exposed from the end (edge) of the layer 13. In other words, the coating layer 14 includes the protruding portion 15 (second protruding portion) formed by protruding beyond the end portion of the electromagnetic wave shielding layer 13. And these protrusion part 15 and protrusion part 16 form the lamination | stacking protrusion part 65 provided by laminating | stacking in the position beyond the edge part of the electromagnetic wave shield layer 13. FIG.
 このような封止用フィルム100を用いて、電子部品4が上面(一方の面)側に搭載された電子部品搭載基板45に対して、絶縁層12を下側とし、被覆層14を上側にして、被覆すると、電子部品4は、絶縁層12を介して電磁波シールド層13で封止される。この封止の際に、本実施形態では、電磁波シールド層13の端部を越えて突出する突出部15および突出部16が積層された積層突出部65により、電磁波シールド層13が被覆されているため、電子部品4と電磁波シールド層13との間で短絡が生じるのをより的確に防止し得ることから、電磁波シールド層13は、この電子部品4に対する絶縁性がより確実に確保されたものとなる。また、電磁波シールド層13の上面を被覆する被覆層14を備えるため、電子部品搭載基板45の外側に位置する他の電子部品に対する絶縁性を確保することができる。 Using such a sealing film 100, with respect to the electronic component mounting substrate 45 on which the electronic component 4 is mounted on the upper surface (one surface) side, the insulating layer 12 is on the lower side and the covering layer 14 is on the upper side. Then, the electronic component 4 is sealed with the electromagnetic wave shielding layer 13 through the insulating layer 12. At the time of sealing, in this embodiment, the electromagnetic wave shielding layer 13 is covered with the laminated protrusion 65 in which the protruding part 15 and the protruding part 16 protruding beyond the end of the electromagnetic wave shielding layer 13 are laminated. Therefore, since it is possible to more accurately prevent a short circuit from occurring between the electronic component 4 and the electromagnetic wave shielding layer 13, the electromagnetic wave shielding layer 13 is more reliably secured to the electronic component 4. Become. In addition, since the coating layer 14 that covers the upper surface of the electromagnetic wave shielding layer 13 is provided, insulation against other electronic components located outside the electronic component mounting substrate 45 can be ensured.
 さらに、本実施形態では、この封止用フィルム100を用いた被覆の際に、突出部15と突出部16とが積層することで形成された積層突出部65は、基板5の下面(他方の面)側に折り込むことが可能なように構成されている。そのため、基板5の下面の端部51を、この積層突出部65が備える突出部16により被覆することができる。したがって、本実施形態の封止用フィルム100により、基板5の上面側ばかりでなく、基板5の下面における端部51まで積層突出部65により被覆することができ、より優れた気密性をもって、電子部品搭載基板45を被覆することができる。そのため、封止用フィルム100により被覆することで得られる封止用フィルム被覆電子部品搭載基板50において、基板5上の電子部品4が湿気や埃等の外部因子と接触するのをより的確に抑制または防止することができる。 Furthermore, in the present embodiment, the laminated projection 65 formed by laminating the projection 15 and the projection 16 at the time of coating using the sealing film 100 is the bottom surface of the substrate 5 (the other side). It is configured so that it can be folded to the surface) side. Therefore, the end portion 51 on the lower surface of the substrate 5 can be covered with the protruding portion 16 included in the stacked protruding portion 65. Therefore, the sealing film 100 of the present embodiment can cover not only the upper surface side of the substrate 5 but also the end portion 51 on the lower surface of the substrate 5 with the laminated projecting portion 65, and has an excellent airtightness. The component mounting board 45 can be covered. Therefore, in the sealing film-covered electronic component mounting substrate 50 obtained by covering with the sealing film 100, the electronic component 4 on the substrate 5 is more accurately suppressed from coming into contact with external factors such as moisture and dust. Or it can be prevented.
 なお、この被覆層14は、樹脂材料を主材料として構成され、前述した第2実施形態の被覆層12と同様の材料を用いることができる。 In addition, this coating layer 14 is comprised considering a resin material as a main material, and can use the material similar to the coating layer 12 of 2nd Embodiment mentioned above.
 さらに、本実施形態では、前記軟化点における伸び率が、150%以上3500%以下となっている。これにより、基板5の上面側から下面側へ積層突出部65を折り込ませることで、端部51を被覆する際に、積層突出部65が屈曲した屈曲部において破断してしまうのを的確に抑制または防止することができる。 Furthermore, in this embodiment, the elongation at the softening point is 150% or more and 3500% or less. Thereby, by folding the laminated protrusion 65 from the upper surface side to the lower surface side of the substrate 5, when the end portion 51 is covered, the laminated protrusion 65 is prevented from being broken at the bent portion. Or it can be prevented.
 また、前記第1実施形態と同様に、封止用フィルム100の25℃以上80℃以下の温度範囲での線膨張率は、100ppm/K以下であることが好ましい。このように、封止用フィルム100の線膨張率を規定することによっても、基板5の上面側から下面側への積層突出部65の折り込みを、積層突出部65を屈曲させる屈曲部において破断を生じさせることなく確実に実施させることができる。 Further, similarly to the first embodiment, the linear expansion coefficient in the temperature range of 25 ° C. to 80 ° C. of the sealing film 100 is preferably 100 ppm / K or less. As described above, by defining the linear expansion coefficient of the sealing film 100, the folding of the laminated protrusion 65 from the upper surface side to the lower surface side of the substrate 5 is broken at the bent portion that bends the laminated protrusion 65. It can be carried out reliably without causing it.
 さらに、封止用フィルム100における、積層突出部65の長さは、特に限定されず、0.1cm以上5.0cm以下であることが好ましく、0.5cm以上2.5cm以下であることがより好ましい。積層突出部65の長さをかかる範囲内に設定することにより、積層突出部65を、基板5の上面側から下面側に折り込みつつ、基板5の下面における端部51にまで到達させることができるため、突出部16による端部51の被覆を確実に実現させることができる。 Furthermore, the length of the lamination | stacking protrusion part 65 in the film 100 for sealing is not specifically limited, It is preferable that they are 0.1 cm or more and 5.0 cm or less, and it is more preferable that they are 0.5 cm or more and 2.5 cm or less. preferable. By setting the length of the laminated protrusion 65 within such a range, the laminated protrusion 65 can reach the end 51 on the lower surface of the substrate 5 while being folded from the upper surface side to the lower surface side of the substrate 5. Therefore, it is possible to reliably realize the covering of the end portion 51 by the protruding portion 16.
 [電子部品搭載基板の封止方法]
 次に、上述した第11実施形態の封止用フィルムを用いた電子部品搭載基板の封止方法について説明する。
[Method of sealing electronic component mounting board]
Next, a method for sealing an electronic component mounting board using the sealing film of the eleventh embodiment described above will be described.
 本実施形態の電子部品搭載基板の封止方法は、基板5と電子部品4とを覆うように、絶縁層12を電子部品搭載基板45側にして封止用フィルム100を電子部品搭載基板45上に配置しつつ、積層突出部65を、基板5の下面(他方の面)側に折り込むことにより基板5の下面における端部51に接触させる配置工程と、封止用フィルム100を加熱し軟化させるとともに、減圧する加熱・減圧工程と、封止用フィルム100を冷却させるとともに、加圧することで、絶縁層12を介して電磁波シールド層13により電子部品4を被覆し、かつ、積層突出部65が基板5の下面における端部51に接触した状態で、基板5と電子部品4とを封止用フィルム100で封止する冷却・加圧工程とを有する。 The electronic component mounting substrate sealing method of this embodiment is such that the sealing film 100 is placed on the electronic component mounting substrate 45 with the insulating layer 12 facing the electronic component mounting substrate 45 so as to cover the substrate 5 and the electronic component 4. The stacking protrusion 65 is placed on the lower surface (the other surface) side of the substrate 5 to be brought into contact with the end portion 51 on the lower surface of the substrate 5 and the sealing film 100 is heated and softened. At the same time, the heating / depressurization step for reducing the pressure, cooling the sealing film 100, and applying pressure to cover the electronic component 4 with the electromagnetic wave shielding layer 13 through the insulating layer 12, and the laminated protrusion 65 is A cooling / pressurizing step of sealing the substrate 5 and the electronic component 4 with the sealing film 100 while being in contact with the end portion 51 on the lower surface of the substrate 5;
 以下、電子部品搭載基板の封止方法の各工程について、順次説明する。
(配置工程)
 まず、図22(a)に示すように、封止用フィルム100が備える絶縁層12および電磁波シールド層13のうち絶縁層12を、電子部品搭載基板45に対向させた状態で、電子部品搭載基板45が備える基板5と電子部品4とを覆うように、封止用フィルム100を電子部品搭載基板45上に配置する。
Hereafter, each process of the sealing method of an electronic component mounting substrate is demonstrated sequentially.
(Arrangement process)
First, as shown in FIG. 22A, the electronic component mounting board in a state where the insulating layer 12 of the insulating film 12 and the electromagnetic wave shielding layer 13 included in the sealing film 100 is opposed to the electronic component mounting board 45. The sealing film 100 is disposed on the electronic component mounting substrate 45 so as to cover the substrate 5 and the electronic component 4 included in the electronic component 45.
 そして、この際、電磁波シールド層13の端部を越えて突出する積層突出部65を、基板5の下面側に折り込み、これにより、積層突出部65を端部51に接触させる(図22(b))。 At this time, the laminated protrusion 65 that protrudes beyond the end of the electromagnetic wave shielding layer 13 is folded to the lower surface side of the substrate 5, thereby bringing the laminated protrusion 65 into contact with the end 51 (FIG. 22B). )).
(加熱・減圧工程)
 次に、図22(b)に示す状態を維持したまま、封止用フィルム100を加熱し軟化させるとともに、減圧する。
(Heating and decompression process)
Next, the sealing film 100 is heated and softened while maintaining the state shown in FIG.
 このように、封止用フィルム100を加熱することにより、封止用フィルム100すなわち絶縁層12、電磁波シールド層13および被覆層14が軟化し、その結果、基板5の上面側では、基板5に電子部品4を搭載することにより形成された凹凸6の形状に対して、追従し得る状態となり、さらに、基板5の下面側では、端部51を、被覆し得る状態となる。 Thus, by heating the sealing film 100, the sealing film 100, that is, the insulating layer 12, the electromagnetic wave shielding layer 13, and the coating layer 14 are softened. As a result, on the upper surface side of the substrate 5, It will be in the state which can follow the shape of the unevenness | corrugation 6 formed by mounting the electronic component 4, and also will be in the state which can coat | cover the edge part 51 in the lower surface side of the board | substrate 5. FIG.
 また、この際、電子部品搭載基板45および封止用フィルム100を、減圧雰囲気下に配置することで、封止用フィルム100の外側ばかりでなく、電子部品搭載基板45と封止用フィルム100との間の気体(空気)が脱気される。 At this time, the electronic component mounting substrate 45 and the sealing film 100 are arranged in a reduced-pressure atmosphere, so that not only the outside of the sealing film 100 but also the electronic component mounting substrate 45 and the sealing film 100 The gas (air) in between is degassed.
 これにより、封止用フィルム100が伸展しながら、基板5の上側では、凹凸6の形状、すなわち、基板5上の電子部品4の形状に若干追従した状態となり、基板5の下側では、端部51を若干被覆した状態となる。 Thereby, while the sealing film 100 is extended, the shape of the unevenness 6 on the upper side of the substrate 5, that is, the shape of the electronic component 4 on the substrate 5 is slightly followed. The part 51 is slightly covered.
 本工程により、封止用フィルム100を、電子部品搭載基板45の上面側に形成された凹凸6の形状に追従し得る状態とし、さらに、積層突出部65が基板5の下面側に折り込まれて、端部51を被覆し得る状態とすることができる。 By this step, the sealing film 100 can be made to follow the shape of the unevenness 6 formed on the upper surface side of the electronic component mounting substrate 45, and the laminated protrusion 65 is folded on the lower surface side of the substrate 5. The end portion 51 can be covered.
(冷却・加圧工程)
 次に、図22(c)に示すように、封止用フィルム100を冷却させるとともに、加圧する。
(Cooling / pressurization process)
Next, as shown in FIG. 22C, the sealing film 100 is cooled and pressurized.
 このように、減圧された雰囲気から加圧することで、前記加熱・減圧工程において、電子部品搭載基板45と封止用フィルム100との間が脱気され、減圧状態が維持されていることから、封止用フィルム100がさらに伸展することとなる。 Thus, by pressurizing from the decompressed atmosphere, in the heating and decompression step, the space between the electronic component mounting substrate 45 and the sealing film 100 is degassed, and the decompressed state is maintained. The sealing film 100 is further extended.
 その結果、基板5の上側では凹凸6の形状(電子部品4の形状)に対して優れた密着度(気密度)で追従し、さらに、端部51に対して優れた密着度で被覆した状態で、軟化した状態の封止用フィルム100により、基板5と電子部品4とが被覆される。 As a result, the upper side of the substrate 5 follows the shape of the unevenness 6 (the shape of the electronic component 4) with an excellent degree of adhesion (air density), and further covers the end portion 51 with an excellent degree of adhesion. Thus, the substrate 5 and the electronic component 4 are covered with the sealing film 100 in a softened state.
 この際、本実施形態では、電磁波シールド層13の上面を被覆する被覆層14を備えるため、電子部品搭載基板45の外側に位置する他の電子部品に対する絶縁性を確保することができる。また、電磁波シールド層13の端部を越えて突出する突出部15および突出部16が積層された積層突出部65により、電磁波シールド層13が被覆されているため、電子部品4と電磁波シールド層13との間で短絡が生じるのをより的確に防止し得ることから、電磁波シールド層13は、この電子部品4に対する絶縁性がより確実に確保されたものとなる。 At this time, in this embodiment, since the coating layer 14 that covers the upper surface of the electromagnetic wave shielding layer 13 is provided, insulation against other electronic components located outside the electronic component mounting substrate 45 can be ensured. Further, since the electromagnetic wave shielding layer 13 is covered with the laminated protrusion 65 in which the protruding parts 15 and 16 protruding beyond the end of the electromagnetic wave shielding layer 13 are laminated, the electronic component 4 and the electromagnetic wave shielding layer 13 are covered. Therefore, the electromagnetic wave shielding layer 13 is more reliably ensured of insulation against the electronic component 4.
 また、本発明では、封止用フィルム100の軟化点における伸び率が150%以上3500%以下となっている。これにより、封止用フィルム100は、この加圧時に、電子部品搭載基板45に形成された凹凸6に対してより優れた形状追従性をもって伸展させることができるため、軟化した状態の封止用フィルム100により、基板5の上側において基板5と電子部品4とを、さらには端部51を優れた密着性をもって被覆することができる。また、基板5の上面側から下面側へ積層突出部65を折り込ませることで端部51に接触させる際に、積層突出部65が屈曲した屈曲部において破断してしまうのを的確に抑制または防止することができる。 In the present invention, the elongation at the softening point of the sealing film 100 is 150% or more and 3500% or less. Thereby, since the film 100 for sealing can be extended with the more excellent shape followable | trackability with respect to the unevenness | corrugation 6 formed in the electronic component mounting board | substrate 45 at the time of this pressurization, for the sealing of the softened state The film 100 can cover the substrate 5 and the electronic component 4 on the upper side of the substrate 5 and the end portion 51 with excellent adhesion. Further, when the laminated protrusion 65 is folded from the upper surface side to the lower surface side of the substrate 5 and brought into contact with the end portion 51, the laminated protrusion 65 is accurately suppressed or prevented from breaking at the bent portion. can do.
 そして、封止用フィルム100により、基板5と電子部品4とを、さらには端部51を優れた密着性(気密性)をもって被覆した状態で、封止用フィルム100を冷却することで、この状態を維持したまま、封止用フィルム100が固化する。 Then, the sealing film 100 is cooled with the sealing film 100 in a state where the substrate 5 and the electronic component 4 are covered with the end 51 with excellent adhesion (airtightness). The sealing film 100 is solidified while maintaining the state.
 これにより、電子部品搭載基板45に形成された凹凸6の形状に追従した状態で、封止用フィルム100により、基板5の上側において、絶縁層12が接触した状態で基板5と電子部品4とが被覆され、基板5の下側において、折り込まれた積層突出部65が端部51を被覆した状態で封止用フィルム被覆電子部品搭載基板50が得られることとなる。そのため、この封止用フィルム被覆電子部品搭載基板50において、湿気や埃等の外部因子と電子部品4が接触するのをより的確に抑制または防止することができる。したがって、得られる封止用フィルム被覆電子部品搭載基板50ひいてはこの封止用フィルム被覆電子部品搭載基板50を備える電子機器のより信頼性の向上が図られる。 Thereby, the substrate 5 and the electronic component 4 are in contact with the insulating layer 12 on the upper side of the substrate 5 by the sealing film 100 while following the shape of the irregularities 6 formed on the electronic component mounting substrate 45. The film-covered electronic component mounting substrate 50 for sealing is obtained in a state where the folded laminated protrusion 65 covers the end 51 on the lower side of the substrate 5. Therefore, in the sealing film-covered electronic component mounting substrate 50, it is possible to more accurately suppress or prevent the electronic component 4 from coming into contact with external factors such as moisture and dust. Therefore, the reliability of the obtained electronic device including the sealing film-covered electronic component mounting substrate 50 and thus the sealing film-covered electronic component mounting substrate 50 can be improved.
 上記の工程を経ることで、封止用フィルム100により、基板5と電子部品4とが被覆された封止用フィルム被覆電子部品搭載基板50を得ることができる。 Through the above steps, the sealing film-covered electronic component mounting substrate 50 in which the substrate 5 and the electronic component 4 are covered with the sealing film 100 can be obtained.
 <第1参考形態>
 [封止用フィルム]
 次に、封止用フィルム100の第1参考形態について説明する。
<First Reference Form>
[Sealing film]
Next, the 1st reference form of the film 100 for sealing is demonstrated.
 図23は、封止用フィルムの第1参考形態を示す図((a)縦断面図、(b)平面図)、図24(a)~(c)は、図23に示す封止用フィルムを用いて電子部品搭載基板の封止方法を説明するための縦断面図である。なお、以下の説明では、説明の便宜上、図23、図24中の上側を「上」、下側を「下」と言う。 FIG. 23 is a view showing a first reference form of a sealing film ((a) longitudinal sectional view, (b) plan view), and FIGS. 24 (a) to 24 (c) are the sealing films shown in FIG. It is a longitudinal cross-sectional view for demonstrating the sealing method of an electronic component mounting board | substrate using FIG. In the following description, for convenience of description, the upper side in FIGS. 23 and 24 is referred to as “upper” and the lower side is referred to as “lower”.
 以下、第1参考形態について説明するが、本発明の前記第1~第11実施形態と異なる点を中心に説明し、同様の事項についてはその説明を省略する。 Hereinafter, the first reference embodiment will be described, but the description will focus on differences from the first to eleventh embodiments of the present invention, and description of similar matters will be omitted.
 本実施形態の封止用フィルム100は、図23、図24に示すように、最内層12と、この最内層12の一方の面側(上面側)に積層された中間層19と、中間層19の一方の面側に積層された最外層14とを備える積層体で構成されている。すなわち、最内層12と、中間層19と、最外層14とは、被覆すべき電子部品搭載基板45側から、この順で、積層されている。 As shown in FIGS. 23 and 24, the sealing film 100 of this embodiment includes an innermost layer 12, an intermediate layer 19 laminated on one surface side (upper surface side) of the innermost layer 12, and an intermediate layer It is comprised with the laminated body provided with the outermost layer 14 laminated | stacked on the one surface side of 19. FIG. That is, the innermost layer 12, the intermediate layer 19, and the outermost layer 14 are laminated in this order from the electronic component mounting substrate 45 side to be coated.
 ここで、封止用フィルム100により被覆される電子部品搭載基板45は、本実施形態では、図24に示すように、基板5と、基板5の上面(一方の面)側の中央部に搭載(載置)された電子部品4と、電子部品4に電気的に接続され、基板5の上面(一方の面)側の端部に搭載された、開放端面を有する接続部材7とを備えている。このような電子部品搭載基板45において、基板5の上面への電子部品4の搭載により、基板5上に凸部61と凹部62とからなる凹凸6が形成される。なお、基板5としては、例えば、プリント配線基板が挙げられ、基板5上に搭載する電子部品4としては、例えば、半導体素子、コンデンサー、コイルおよび抵抗等が挙げられる。また、接続部材7としては、電子部品4と他の電子部品とのデータの受け渡しや、電子部品4への電源からの電気の供給等に用いられる接続端子を開放端面として備えるコネクター等が挙げられる。 Here, in this embodiment, the electronic component mounting substrate 45 covered with the sealing film 100 is mounted on the substrate 5 and the central portion on the upper surface (one surface) side of the substrate 5 as shown in FIG. The electronic component 4 is placed (placed), and a connection member 7 that is electrically connected to the electronic component 4 and is mounted on an end portion on the upper surface (one surface) side of the substrate 5 and having an open end surface. Yes. In such an electronic component mounting substrate 45, the mounting of the electronic component 4 on the upper surface of the substrate 5 forms the unevenness 6 including the convex portions 61 and the concave portions 62 on the substrate 5. Examples of the substrate 5 include a printed wiring board, and examples of the electronic component 4 mounted on the substrate 5 include a semiconductor element, a capacitor, a coil, and a resistor. Examples of the connection member 7 include a connector provided with a connection terminal used as an open end surface for data exchange between the electronic component 4 and another electronic component, electricity supply from the power source to the electronic component 4, and the like. .
 このように電子部品4および接続部材7が上面側に搭載された電子部品搭載基板45に対して、最内層12を下側とし、最外層14を上側にして、封止用フィルム100を用いて被覆することにより、電子部品4は、この封止用フィルム100、すなわち、最内層12を電子部品4側とした最内層12と中間層19と最外層14とがこの順で積層された積層体により封止される。これにより、この封止用フィルム100を被覆することで得られる封止用フィルム被覆電子部品搭載基板50において、基板5上の電子部品4が湿気や埃等の外部因子と接触するのを的確に抑制または防止することができる。一方、本参考形態の封止用フィルム100は、電子部品搭載基板45を封止する際に、接続部材7に対応する位置に逃げ部27を有しているため、接続部材7が封止用フィルム100により封止されることなく、露出させることができる。したがって、封止用フィルム被覆電子部品搭載基板50において、電子部品搭載基板45と他の電子部品や電源との電気的な接続を実現しつつ、電子部品4の封止用フィルム100による封止を行うことができる。 Thus, with respect to the electronic component mounting substrate 45 on which the electronic component 4 and the connection member 7 are mounted on the upper surface side, the innermost layer 12 is on the lower side, the outermost layer 14 is on the upper side, and the sealing film 100 is used. By covering the electronic component 4, the sealing film 100, that is, a laminate in which the innermost layer 12, the intermediate layer 19, and the outermost layer 14 are laminated in this order with the innermost layer 12 as the electronic component 4 side. Is sealed. Thus, in the sealing film-covered electronic component mounting substrate 50 obtained by covering the sealing film 100, the electronic component 4 on the substrate 5 is accurately contacted with external factors such as moisture and dust. It can be suppressed or prevented. On the other hand, since the sealing film 100 of the present embodiment has the escape portion 27 at a position corresponding to the connecting member 7 when the electronic component mounting substrate 45 is sealed, the connecting member 7 is used for sealing. The film 100 can be exposed without being sealed. Accordingly, in the sealing film-covered electronic component mounting substrate 50, the electronic component mounting substrate 45 is sealed with the sealing film 100 while realizing the electrical connection between the electronic component mounting substrate 45 and another electronic component or a power source. It can be carried out.
 なお、図24に示すように、電子部品搭載基板45において、接続部材7は、基板5の上面における端部に形成され、これに対応して、逃げ部27は、平面視において、封止用フィルム100の端部がU字状に切り取りまたは欠損した切り欠きまたは欠損部で構成される。例えば、電子部品搭載基板45において、接続部材7が基板5の上面における中央部に形成される場合には、これに対応して、逃げ部27は、平面視において、封止用フィルム100の中央部が四角形状に開口した開口部(孔部)で構成される。 As shown in FIG. 24, in the electronic component mounting substrate 45, the connection member 7 is formed at the end portion on the upper surface of the substrate 5, and correspondingly, the escape portion 27 is for sealing in a plan view. The end portion of the film 100 is constituted by a notch or a notch portion that is cut or missing in a U-shape. For example, in the electronic component mounting substrate 45, when the connection member 7 is formed at the center portion on the upper surface of the substrate 5, the clearance portion 27 corresponds to the center of the sealing film 100 in plan view. The part is composed of an opening (hole) having a square shape.
 また、このような封止用フィルム100は、最内層12、中間層19および最外層14が、何れも、樹脂材料を含有し、JIS K 6251に準拠して求められる軟化点における伸び率が150%以上3500%以下であるのが好ましく、1000%以上3500%以下であるのがより好ましく、1000%以上2000%以下であるのがさらに好ましい。 Further, in such a sealing film 100, the innermost layer 12, the intermediate layer 19 and the outermost layer 14 all contain a resin material, and the elongation at the softening point required in accordance with JIS K 6251 is 150. % Is preferably 3% or more and 3500% or less, more preferably 1000% or more and 3500% or less, and even more preferably 1000% or more and 2000% or less.
 封止用フィルム100の軟化点における伸び率がかかる範囲内であることにより、封止用フィルム100による電子部品搭載基板45の被覆の際に、電子部品搭載基板45が備える、凸部61と凹部62とからなる凹凸6に対して、優れた追従性をもって封止した状態で、電子部品4を被覆することができる。そのため、この封止用フィルム100を被覆することで得られる封止用フィルム被覆電子部品搭載基板50において、基板5上の電子部品4が湿気や埃等の外部因子と接触するのをより的確に抑制または防止することができる。したがって、得られる封止用フィルム被覆電子部品搭載基板50ひいてはこの封止用フィルム被覆電子部品搭載基板50を備える電子機器の信頼性の向上が図られる。 When the elongation at the softening point of the sealing film 100 is within such a range, when the electronic component mounting substrate 45 is covered with the sealing film 100, the convex portion 61 and the concave portion included in the electronic component mounting substrate 45 are provided. The electronic component 4 can be covered in a state in which the unevenness 6 composed of 62 is sealed with excellent followability. Therefore, in the sealing film-covered electronic component mounting substrate 50 obtained by covering the sealing film 100, the electronic component 4 on the substrate 5 is more accurately brought into contact with external factors such as moisture and dust. It can be suppressed or prevented. Accordingly, the reliability of the obtained electronic device including the sealing film-covered electronic component mounting substrate 50 and thus the sealing film-covered electronic component mounting substrate 50 can be improved.
 また、封止用フィルム100の軟化点における伸び率を前記範囲内とすることにより、基板5に設けられた凹凸6における段差が具体的な大きさとして、10mm以上のように大きいものであったとしても、封止用フィルム100を凹凸6の形状に対応して追従させることができる。 In addition, by setting the elongation at the softening point of the sealing film 100 within the above range, the step in the unevenness 6 provided on the substrate 5 was as large as 10 mm or more as a specific size. Even so, the sealing film 100 can be made to follow the shape of the irregularities 6.
 このように、凹凸6に対する追従性等の観点から、前記軟化点における伸び率が150%以上3500%以下であるのが好ましいため、以下では、かかる伸び率を満足し得る封止用フィルム100が備える最内層12、中間層19および最外層14の層構成について説明する。 Thus, since it is preferable that the elongation at the softening point is 150% or more and 3500% or less from the viewpoint of followability to the unevenness 6 and the like, in the following, the sealing film 100 that can satisfy the elongation is provided. The layer configuration of the innermost layer 12, the intermediate layer 19, and the outermost layer 14 provided will be described.
 前記軟化点における伸び率が150%以上3500%以下となっている封止用フィルム100が備える最内層12、中間層19および最外層14は、それぞれが樹脂材料を含有し、この樹脂材料の種類を適宜選択することで、前記軟化点における伸び率を前記範囲内に設定することができる。かかる樹脂材料としては、前述した絶縁層12、電磁波シールド層13および被覆層14と同様の樹脂材料を用いることができる。 The innermost layer 12, the intermediate layer 19 and the outermost layer 14 included in the sealing film 100 having an elongation at the softening point of 150% or more and 3500% or less each contain a resin material. By selecting as appropriate, the elongation at the softening point can be set within the range. As such a resin material, the same resin materials as those of the insulating layer 12, the electromagnetic wave shielding layer 13, and the covering layer 14 described above can be used.
 また、最内層12、中間層19および最外層14に含まれる樹脂材料は、上述した熱可塑性樹脂材料の他に、エポキシ樹脂、フェノール樹脂、メラミン樹脂、シリコーン樹脂のような熱硬化性樹脂やアクリル樹脂やウレタン樹脂のようなUV硬化性樹脂が含まれていてもよい。 Further, the resin materials contained in the innermost layer 12, the intermediate layer 19 and the outermost layer 14 may be a thermosetting resin such as an epoxy resin, a phenol resin, a melamine resin, or a silicone resin, or an acrylic resin in addition to the thermoplastic resin material described above. A UV curable resin such as a resin or a urethane resin may be included.
 また、封止用フィルム100の前記軟化点における伸び率を前記範囲内とするために、上述のような樹脂材料を含有する最内層12、中間層19および最外層14の各層は、前記樹脂材料(熱可塑性樹脂材料)を主材料として含有する層で構成され、これにより、絶縁性を有する絶縁層として機能する。 Further, in order to make the elongation at the softening point of the sealing film 100 within the above range, each of the innermost layer 12, the intermediate layer 19 and the outermost layer 14 containing the resin material as described above is formed of the resin material. It is comprised by the layer which contains (thermoplastic resin material) as a main material, and functions as an insulating layer which has insulation by this.
 上記のような構成をなす、何れも樹脂材料を含有する最内層12、中間層19および最外層14を備える封止用フィルム100は、前述した樹脂材料のうちポリオレフィン系樹脂を前記樹脂材料として含有する層を、最内層12、中間層19および最外層14のうちの少なくとも1層として備えることが好ましい。これにより、封止用フィルム100の軟化点における伸び率をより確実に150%以上3500%以下に設定することができる。 The sealing film 100 including the innermost layer 12, the intermediate layer 19, and the outermost layer 14 each containing a resin material, having the above-described configuration, includes a polyolefin-based resin as the resin material among the resin materials described above. Preferably, the layer to be provided is provided as at least one of the innermost layer 12, the intermediate layer 19, and the outermost layer 14. Thereby, the elongation at the softening point of the sealing film 100 can be set to 150% or more and 3500% or less more reliably.
 そこで、以下では、前記樹脂材料を主材料として含有する最内層12と、中間層19と、最外層14とを備え、最内層12および最外層14に含まれる樹脂材料がともにポリオレフィン系樹脂である封止用フィルム100を、一例として説明する。 Therefore, in the following, the innermost layer 12 containing the resin material as a main material, the intermediate layer 19, and the outermost layer 14 are provided, and the resin materials contained in the innermost layer 12 and the outermost layer 14 are both polyolefin-based resins. The sealing film 100 will be described as an example.
 最内層12は、封止用フィルム100の軟化点における伸び率を150%以上3500%以下に設定して、凹凸6への密着性および形状追従性に優れたものとすることを目的に、本実施形態では、ポリオレフィン系樹脂(エチレン共重合体)としてのエチレン-酢酸ビニル共重合体を主材料として含有する層である。なお、最内層12は、前述した各実施形態の絶縁層12と同様の構成を有している。 For the purpose of the innermost layer 12, the elongation at the softening point of the sealing film 100 is set to 150% or more and 3500% or less, and the adhesiveness to the irregularities 6 and the shape followability are excellent. In the embodiment, the layer contains an ethylene-vinyl acetate copolymer as a polyolefin resin (ethylene copolymer) as a main material. The innermost layer 12 has the same configuration as that of the insulating layer 12 of each embodiment described above.
 また、この最内層12は、樹脂材料としてエチレン-酢酸ビニル共重合体を主材料として含有することで、絶縁性を備える層であり、電子部品搭載基板45を封止用フィルム100で被覆する際に、電子部品4同士との間で短絡が生じるのを防止するための層として機能する。 The innermost layer 12 is a layer having an insulating property by containing an ethylene-vinyl acetate copolymer as a resin material as a main material. When the electronic component mounting substrate 45 is covered with the sealing film 100, Moreover, it functions as a layer for preventing a short circuit from occurring between the electronic components 4.
 このエチレン-酢酸ビニル共重合体としては、共重合されるVA含有量が5重量%以上30重量%以下であることが好ましく、10重量%以上20重量%以下であることがより好ましい。前記下限値未満であると、封止用フィルム100の軟化点における伸び率を前記範囲内に設定することが困難となるおそれがある。これに対して、前記上限値を超えると、最内層12を構成する樹脂の結晶部が減少し、非結晶部が増加する傾向を示すことに起因して、最内層12に残存する酸化防止剤等の添加剤が溶出するおそれがある。そのため、電子部品搭載基板45側に移行し、その結果、電子部品4の特性に不都合が生じるおそれがある。 In this ethylene-vinyl acetate copolymer, the VA content to be copolymerized is preferably 5% by weight to 30% by weight, and more preferably 10% by weight to 20% by weight. If it is less than the lower limit, it may be difficult to set the elongation at the softening point of the sealing film 100 within the above range. On the other hand, when the upper limit is exceeded, the antioxidant remaining in the innermost layer 12 due to the tendency that the crystal part of the resin constituting the innermost layer 12 decreases and the amorphous part increases. Such additives may be eluted. For this reason, the electronic component mounting board 45 side is shifted, and as a result, there is a possibility that the characteristics of the electronic component 4 may be inconvenient.
 また、最内層12の平均厚さは、5μm以上200μm以下であることが好ましく、20μm以上120μm以下であることがより好ましい。最内層12の平均厚さをかかる範囲内に設定することにより、封止用フィルム100の軟化点における伸び率を150%以上3500%以下の範囲内により確実に設定することができる。また、中間層19の電子部品4に対する絶縁性をより確実に確保することができる。 Further, the average thickness of the innermost layer 12 is preferably 5 μm or more and 200 μm or less, and more preferably 20 μm or more and 120 μm or less. By setting the average thickness of the innermost layer 12 within such a range, the elongation at the softening point of the sealing film 100 can be reliably set within a range of 150% to 3500%. In addition, the insulation of the intermediate layer 19 with respect to the electronic component 4 can be more reliably ensured.
 なお、最内層12に含まれる樹脂材料としては、ポリオレフィン系樹脂(エチレン共重合体)としてのエチレン-酢酸ビニル共重合体の他、後述する中間層19に含まれるアイオノマー樹脂であってもよいし、エチレン-酢酸ビニル共重合体以外のポリオレフィン系樹脂であってもよい。 The resin material contained in the innermost layer 12 may be an ionomer resin contained in an intermediate layer 19 described later, in addition to an ethylene-vinyl acetate copolymer as a polyolefin resin (ethylene copolymer). Polyolefin resins other than ethylene-vinyl acetate copolymer may be used.
 中間層19は、封止用フィルム100の軟化点における伸び率を150%以上3500%以下に設定して、凹凸6への密着性および形状追従性に優れたものとすること、さらには、封止用フィルム100を強靱性に優れたものとすることを目的に、本実施形態では、樹脂材料としてアイオノマー樹脂を含有する。 The intermediate layer 19 is set to have an elongation at the softening point of the sealing film 100 of 150% or more and 3500% or less so as to have excellent adhesion to the unevenness 6 and shape followability. In the present embodiment, an ionomer resin is contained as a resin material for the purpose of making the stop film 100 excellent in toughness.
 このような中間層19により、電子部品搭載基板45を封止用フィルム100で被覆する際に、最内層12を介して、基板5の上側に配置された電子部品4が被覆される。 Such an intermediate layer 19 covers the electronic component 4 arranged on the upper side of the substrate 5 through the innermost layer 12 when the electronic component mounting substrate 45 is covered with the sealing film 100.
 ここで、本明細書中において、樹脂材料としてのアイオノマー樹脂とは、エチレンおよび(メタ)アクリル酸を重合体の構成成分とする2元共重合体や、エチレン、(メタ)アクリル酸および(メタ)アクリル酸エステルを重合体の構成成分とする3元共重合体を、金属イオンで架橋した樹脂のことを言い、これらのうちの1種または2種を組み合わせて用いることができる。 Here, in this specification, the ionomer resin as the resin material means a binary copolymer containing ethylene and (meth) acrylic acid as a constituent component of the polymer, ethylene, (meth) acrylic acid and (meta ) Refers to a resin obtained by crosslinking a terpolymer having an acrylic ester as a constituent of a polymer with a metal ion, and one or two of them can be used in combination.
 また、金属イオンとしては、例えば、カリウムイオン(K)、ナトリウムイオン(Na)、リチウムイオン(Li)、マグネシウムイオン(Mg++)、亜鉛イオン(Zn++)等が挙げられる。これらの中でも、ナトリウムイオン(Na)または亜鉛イオン(Zn++)であることが好ましい。これにより、アイオノマー樹脂における架橋構造が安定化されるため、前述した中間層19としての機能をより顕著に発揮させることができる。 Examples of the metal ion include potassium ion (K + ), sodium ion (Na + ), lithium ion (Li + ), magnesium ion (Mg ++ ), and zinc ion (Zn ++ ). Among these, sodium ions (Na + ) or zinc ions (Zn ++ ) are preferable. Thereby, since the crosslinked structure in the ionomer resin is stabilized, the function as the intermediate layer 19 described above can be exhibited more remarkably.
 さらに、エチレンおよび(メタ)アクリル酸を重合体の構成成分とする2元共重合体、もしくは、エチレン、(メタ)アクリル酸および(メタ)アクリル酸エステルを重合体の構成成分とする3元共重合体のカルボキシル基における陽イオン(金属イオン)による中和度は、好ましくは40mol%以上75mol%以下である。 Further, a binary copolymer having ethylene and (meth) acrylic acid as constituent components of the polymer, or a ternary copolymer having ethylene, (meth) acrylic acid and (meth) acrylic acid ester as constituent components of the polymer. The degree of neutralization by the cation (metal ion) in the carboxyl group of the polymer is preferably 40 mol% or more and 75 mol% or less.
 また、中間層19の平均厚さは、1μm以上400μm以下であることが好ましく、5μm以上200μm以下であることがより好ましい。中間層19の平均厚さをかかる範囲内に設定することにより、封止用フィルム100を強靱性に優れ、かつ、封止用フィルム100の軟化点における伸び率が150%以上3500%以下の範囲内に確実に設定されているものとし得る。 Further, the average thickness of the intermediate layer 19 is preferably 1 μm or more and 400 μm or less, and more preferably 5 μm or more and 200 μm or less. By setting the average thickness of the intermediate layer 19 within such a range, the sealing film 100 is excellent in toughness, and the elongation at the softening point of the sealing film 100 is in the range of 150% to 3500%. It can be assumed that it is securely set within.
 なお、中間層19に含まれる樹脂材料としては、アイオノマー樹脂の他、最内層12および最外層14に含まれるエチレン-酢酸ビニル共重合体や、それ以外のポリオレフィン系樹脂であってもよい。 The resin material contained in the intermediate layer 19 may be an ionomer resin, an ethylene-vinyl acetate copolymer contained in the innermost layer 12 and the outermost layer 14, or other polyolefin resin.
 最外層14は、封止用フィルム100の軟化点における伸び率を150%以上3500%以下に設定して、凹凸6への密着性および形状追従性に優れたものとすることを目的に、本実施形態では、ポリオレフィン系樹脂(エチレン共重合体)としてのエチレン-酢酸ビニル共重合体を主材料として含有する層である。なお、最外層14は、前述した各実施形態の被覆層14と同様の構成を有している。 For the purpose of the outermost layer 14, the elongation at the softening point of the sealing film 100 is set to 150% or more and 3500% or less, and the adhesion to the unevenness 6 and the shape followability are excellent. In the embodiment, the layer contains an ethylene-vinyl acetate copolymer as a polyolefin resin (ethylene copolymer) as a main material. The outermost layer 14 has the same configuration as the coating layer 14 of each embodiment described above.
 また、最外層14は、樹脂材料としてエチレン-酢酸ビニル共重合体を主材料として含有することで、絶縁性を備える層であり、電子部品搭載基板45を封止用フィルム100で被覆する際に、電子部品搭載基板45の外側に位置する他の電子部品に対する絶縁性を確保するための層として機能する。 The outermost layer 14 is an insulating layer that contains an ethylene-vinyl acetate copolymer as a resin material as a main material. When the electronic component mounting substrate 45 is covered with the sealing film 100, It functions as a layer for ensuring insulation against other electronic components located outside the electronic component mounting board 45.
 このエチレン-酢酸ビニル共重合体としては、共重合されるVA含有量は、前述した最内層12で示した共重合されるVA含有量と同様の範囲内に設定される。 In this ethylene-vinyl acetate copolymer, the VA content to be copolymerized is set within the same range as the VA content to be copolymerized shown in the innermost layer 12 described above.
 また、最外層14の平均厚さは、5μm以上200μm以下であることが好ましく、20μm以上120μm以下であることがより好ましい。最外層14の平均厚さをかかる範囲内に設定することにより、封止用フィルム100の軟化点における伸び率を150%以上3500%以下の範囲内により確実に設定することができる。また、封止用フィルム被覆電子部品搭載基板50の外側に位置する電子部品に対する中間層19の絶縁性をより確実に確保することができる。 Further, the average thickness of the outermost layer 14 is preferably 5 μm or more and 200 μm or less, and more preferably 20 μm or more and 120 μm or less. By setting the average thickness of the outermost layer 14 within such a range, the elongation at the softening point of the sealing film 100 can be reliably set within a range of 150% to 3500%. Moreover, the insulation of the intermediate | middle layer 19 with respect to the electronic component located in the outer side of the film coating electronic component mounting board | substrate 50 for sealing can be ensured more reliably.
 なお、最外層14に含まれる樹脂材料としては、最内層12と同様に、ポリオレフィン系樹脂(エチレン共重合体)としてのエチレン-酢酸ビニル共重合体の他、前述した中間層19に含まれるアイオノマー樹脂であってもよいし、エチレン-酢酸ビニル共重合体以外のポリオレフィン系樹脂であってもよい。 As the resin material contained in the outermost layer 14, as with the innermost layer 12, in addition to the ethylene-vinyl acetate copolymer as a polyolefin resin (ethylene copolymer), the ionomer contained in the intermediate layer 19 described above. It may be a resin or a polyolefin resin other than an ethylene-vinyl acetate copolymer.
 また、封止用フィルム100では、最内層12と中間層19との間、および、中間層19と最外層14との間には、接着性を付与したり、あるいは接着性を高めるために必要に応じて接着層を設けるようにすることもできる。また、最内層12と電子部品搭載基板45との間の接着性を高めるために、必要に応じて最内層12の内側、すなわち最内層12と基板5との間に接着層を設けることもできる。 Further, in the sealing film 100, it is necessary to provide adhesion between the innermost layer 12 and the intermediate layer 19 and between the intermediate layer 19 and the outermost layer 14 or to improve the adhesion. Depending on the case, an adhesive layer may be provided. Moreover, in order to improve the adhesiveness between the innermost layer 12 and the electronic component mounting substrate 45, an adhesive layer can be provided inside the innermost layer 12, that is, between the innermost layer 12 and the substrate 5, as necessary. .
 接着層に含まれる接着性樹脂としては、例えば、EVA、エチレン-無水マレイン酸共重合体、EAA、EEA、エチレン-メタクリレート-グリシジルアクリレート三元共重合体、あるいは、各種ポリオレフィンに、アクリル酸、メタクリル酸などの一塩基性不飽和脂肪酸、マレイン酸、フマル酸、イタコン酸などの二塩基性不飽和脂肪酸またはこれらの無水物をグラフトさせたもの、例えば、マレイン酸グラフト化EVA、マレイン酸グラフト化エチレン-α-オレフィン共重合体、スチレン系エラストマー、アクリル樹脂、エポキシ樹脂、ポリウレタン樹脂等、公知の粘着性樹脂や接着性樹脂を適宜、使用することができる。 Examples of the adhesive resin contained in the adhesive layer include EVA, ethylene-maleic anhydride copolymer, EAA, EEA, ethylene-methacrylate-glycidyl acrylate terpolymer, or various polyolefins such as acrylic acid, methacrylic acid, Monobasic unsaturated fatty acids such as acids, dibasic unsaturated fatty acids such as maleic acid, fumaric acid, itaconic acid or the like grafted with these anhydrides, such as maleic acid grafted EVA, maleic acid grafted ethylene Known adhesive resins and adhesive resins such as -α-olefin copolymers, styrene elastomers, acrylic resins, epoxy resins, polyurethane resins and the like can be used as appropriate.
 さらに、最内層12と中間層19と最外層14とが積層された逃げ部27を備える封止用フィルム100を製造する製造方法については、特に限定されず、例えば、公知の共押出法、ドライラミネート法、押出ラミ法、塗工積層等を用いて、成膜および積層を行った後に、接続部材7に対応する位置を切り抜くことで逃げ部27を形成することで得ることができる。 Furthermore, the manufacturing method for manufacturing the sealing film 100 including the relief portion 27 in which the innermost layer 12, the intermediate layer 19, and the outermost layer 14 are laminated is not particularly limited. After forming and laminating using a laminating method, an extrusion laminating method, a coating laminating method, etc., it is possible to obtain the relief portion 27 by cutting out a position corresponding to the connecting member 7.
 ここで、封止用フィルム100を、上記のような構成の最内層12と中間層19と最外層14とを備える多層体とすることにより、封止用フィルム100の軟化点における伸び率を比較的容易に150%以上3500%以下に設定することができる。 Here, by comparing the sealing film 100 with a multilayer body including the innermost layer 12, the intermediate layer 19, and the outermost layer 14 having the above-described configuration, the elongation at the softening point of the sealing film 100 is compared. It can be easily set to 150% or more and 3500% or less.
 なお、このように軟化点における伸び率を150%以上3500%以下に設定し得るのであれば、封止用フィルム100は、最外層14が省略された2層構成のものであってもよいし、最外層14および中間層19が省略された1層構成のものであってもよい。すなわち、封止用フィルム100は、ポリオレフィン系樹脂のような熱可塑性樹脂を主材料とする層を1層以上有しているものであればよい。 As long as the elongation at the softening point can be set to 150% or more and 3500% or less, the sealing film 100 may have a two-layer configuration in which the outermost layer 14 is omitted. The outermost layer 14 and the intermediate layer 19 may be omitted to have a single layer configuration. That is, the sealing film 100 only needs to have one or more layers mainly composed of a thermoplastic resin such as a polyolefin-based resin.
 また、破断伸び(軟化点における伸び率)の測定は、オートグラフ装置(例えば、島津製作所製、AUTOGRAPH AGS-X等)を用いて、JIS K 6251に記載の方法に準拠して測定することができる。 The elongation at break (elongation at the softening point) can be measured according to the method described in JIS K 6251 using an autograph device (for example, AUTOGRAPH AGS-X manufactured by Shimadzu Corporation). it can.
 また、封止用フィルム100の軟化点は、動的粘弾性測定装置(例えば、セイコーインスツル社製、EXSTAR6000等)を用いて、チャック間距離20mm、昇温速度5℃/分および角周波数10Hzの条件で測定し得る。 In addition, the softening point of the sealing film 100 is determined by using a dynamic viscoelasticity measuring apparatus (for example, EXSTAR6000 manufactured by Seiko Instruments Inc.), a distance between chucks of 20 mm, a heating rate of 5 ° C./min, and an angular frequency of 10 Hz. It can be measured under the following conditions.
 さらに、封止用フィルム100の25℃以上80℃以下の温度範囲での線膨張率は、100ppm/K以下であることが好ましく、5ppm/K以上50ppm/K以下であることがより好ましい。封止用フィルム100の25℃以上80℃以下の温度範囲での線膨張率がこのような範囲の値であると、封止用フィルム100の加熱時において、封止用フィルム100は、優れた伸縮性を有するものとなるため、封止用フィルム100の凹凸6に対する形状追従性をより確実に向上させることができる。さらに、封止用フィルム100と、基板5さらには電子部品4との間で、優れた密着性を維持することができるため、電子部品搭載基板45の駆動を繰り返すことで生じる発熱に起因する封止用フィルム100の電子部品搭載基板45からの剥離をより的確に抑制または防止することができる。なお、封止用フィルム100の線膨張率は、例えば、動的粘弾性測定装置(例えば、セイコーインスツル社製、EXSTAR6000等)を用いて算出し得る。 Furthermore, the linear expansion coefficient in the temperature range of 25 ° C. or more and 80 ° C. or less of the sealing film 100 is preferably 100 ppm / K or less, and more preferably 5 ppm / K or more and 50 ppm / K or less. When the linear expansion coefficient in the temperature range of 25 ° C. or higher and 80 ° C. or lower of the sealing film 100 is a value in such a range, the sealing film 100 is excellent when the sealing film 100 is heated. Since it has a stretching property, the shape followability with respect to the unevenness 6 of the sealing film 100 can be improved more reliably. Furthermore, since excellent adhesion can be maintained between the sealing film 100 and the substrate 5 and further the electronic component 4, the sealing caused by the heat generated by repeatedly driving the electronic component mounting substrate 45 is achieved. The peeling from the electronic component mounting substrate 45 of the stop film 100 can be suppressed or prevented more accurately. The linear expansion coefficient of the sealing film 100 can be calculated using, for example, a dynamic viscoelasticity measuring apparatus (for example, EXSTAR6000 manufactured by Seiko Instruments Inc.).
 封止用フィルム100の全体としての平均厚さは、10μm以上700μm以下であることが好ましく、20μm以上400μm以下であることがより好ましい。封止用フィルム100の平均厚さをかかる範囲内に設定することにより、封止用フィルム100の途中において、封止用フィルム100が破断するのを的確に抑制または防止し得るとともに、封止用フィルム100の軟化点における伸び率を150%以上3500%以下の範囲内に確実に設定することができる。 The average thickness of the sealing film 100 as a whole is preferably 10 μm or more and 700 μm or less, and more preferably 20 μm or more and 400 μm or less. By setting the average thickness of the sealing film 100 within this range, the sealing film 100 can be accurately suppressed or prevented from breaking in the middle of the sealing film 100, and for sealing. The elongation at the softening point of the film 100 can be reliably set within a range of 150% to 3500%.
 [電子部品搭載基板の封止方法]
 次に、上述した第1参考形態の封止用フィルムを用いた電子部品搭載基板の封止方法について説明する。
[Method of sealing electronic component mounting board]
Next, the sealing method of the electronic component mounting substrate using the sealing film of the first reference embodiment described above will be described.
 本参考形態の電子部品搭載基板の封止方法は、基板5と電子部品4とを覆い、かつ、接続部材7に逃げ部27が対応するように、最内層12を電子部品搭載基板45側にして封止用フィルム100を電子部品搭載基板45上に配置する配置工程と、封止用フィルム100を加熱し軟化させるとともに、減圧する加熱・減圧工程と、封止用フィルム100を冷却させるとともに、加圧することで、接続部材7が封止されることなく、基板5と電子部品4とを封止用フィルム100で封止する冷却・加圧工程とを有する。 The sealing method of the electronic component mounting substrate according to the present embodiment is such that the innermost layer 12 is placed on the electronic component mounting substrate 45 side so as to cover the substrate 5 and the electronic component 4 and the escape portion 27 corresponds to the connecting member 7. While placing the sealing film 100 on the electronic component mounting substrate 45, heating and softening the sealing film 100, heating and decompressing the pressure, and cooling the sealing film 100, By pressurizing, it has the cooling and pressurization process which seals the board | substrate 5 and the electronic component 4 with the film 100 for sealing, without the connection member 7 being sealed.
 以下、電子部品搭載基板の封止方法の各工程について、順次説明する。
(配置工程)
 まず、図24(a)に示すように、封止用フィルム100が備える最内層12、中間層19および最外層14のうち最内層12を、電子部品搭載基板45に対向させた状態で、電子部品搭載基板45が備える基板5と電子部品4とを覆い、かつ、接続部材7に逃げ部27が対応するように、封止用フィルム100を電子部品搭載基板45上に配置する(図24(b))。
Hereafter, each process of the sealing method of an electronic component mounting substrate is demonstrated sequentially.
(Arrangement process)
First, as shown in FIG. 24A, the innermost layer 12 of the innermost layer 12, the intermediate layer 19, and the outermost layer 14 included in the sealing film 100 is opposed to the electronic component mounting substrate 45. The sealing film 100 is arranged on the electronic component mounting substrate 45 so as to cover the substrate 5 and the electronic component 4 included in the component mounting substrate 45 and so that the escape portion 27 corresponds to the connecting member 7 (FIG. 24 ( b)).
(加熱・減圧工程)
 次に、図24(b)に示す状態を維持したまま、封止用フィルム100を加熱し軟化させるとともに、減圧する。
(Heating and decompression process)
Next, the sealing film 100 is heated and softened while maintaining the state shown in FIG.
 このように、封止用フィルム100を加熱することにより、封止用フィルム100すなわち最内層12、中間層19および最外層14が軟化し、その結果、基板5の上面側では、基板5に電子部品4を搭載することにより形成された凹凸6の形状に対して、追従し得る状態となる。 Thus, by heating the sealing film 100, the sealing film 100, that is, the innermost layer 12, the intermediate layer 19, and the outermost layer 14 are softened. As a result, on the upper surface side of the substrate 5, electrons are transferred to the substrate 5. It will be in the state which can follow the shape of the unevenness | corrugation 6 formed by mounting the components 4. FIG.
 また、この際、電子部品搭載基板45および封止用フィルム100を、減圧雰囲気下に配置することで、封止用フィルム100の外側ばかりでなく、電子部品搭載基板45と封止用フィルム100との間の気体(空気)が脱気される。 At this time, the electronic component mounting substrate 45 and the sealing film 100 are arranged in a reduced-pressure atmosphere, so that not only the outside of the sealing film 100 but also the electronic component mounting substrate 45 and the sealing film 100 The gas (air) in between is degassed.
 これにより、封止用フィルム100が伸展しながら、基板5の上側では、凹凸6の形状、すなわち、基板5上の電子部品4の形状に若干追従した状態となる。 Thus, while the sealing film 100 is extended, the shape of the unevenness 6, that is, the shape of the electronic component 4 on the substrate 5 is slightly followed on the upper side of the substrate 5.
 本工程により、電子部品搭載基板45の上面側に形成された凹凸6の形状に対して、封止用フィルム100を、追従し得る状態とすることができる。 By this step, the sealing film 100 can be made to follow the shape of the irregularities 6 formed on the upper surface side of the electronic component mounting substrate 45.
 なお、封止用フィルム100の加熱と、雰囲気の減圧とは、加熱の後に減圧してもよく、減圧の後に加熱してもよいが、加熱と減圧とをほぼ同時に行うことが好ましい。これにより、軟化した封止用フィルム100を、凹凸6の形状に確実に若干追従した状態とすることができる。 The heating of the sealing film 100 and the reduced pressure of the atmosphere may be reduced after the heating or may be heated after the reduced pressure, but it is preferable to perform the heating and the reduced pressure almost simultaneously. Thereby, the softened film 100 for sealing can be made into the state which followed the shape of the unevenness | corrugation 6 a little reliably.
(冷却・加圧工程)
 次に、図24(c)に示すように、封止用フィルム100を冷却させるとともに、加圧する。
(Cooling / pressurization process)
Next, as shown in FIG. 24C, the sealing film 100 is cooled and pressurized.
 このように、減圧された雰囲気から加圧することで、前記加熱・減圧工程において、電子部品搭載基板45と封止用フィルム100との間が脱気され、減圧状態が維持されていることから、封止用フィルム100がさらに伸展することとなる。 Thus, by pressurizing from the decompressed atmosphere, in the heating and decompression step, the space between the electronic component mounting substrate 45 and the sealing film 100 is degassed, and the decompressed state is maintained. The sealing film 100 is further extended.
 その結果、基板5の上側では、接続部材7が逃げ部27から露出して封止されることなく、凹凸6の形状(電子部品4の形状)に優れた密着度(気密度)で追従した状態で、軟化した状態の封止用フィルム100により、基板5と電子部品4とが被覆される。
 なお、前記加熱減圧工程において、凹凸6の形状に対応して封止用フィルム100が十分追従していれば、加圧工程を省略することができる。
As a result, on the upper side of the substrate 5, the connection member 7 is not exposed and sealed from the escape portion 27, and follows the shape of the unevenness 6 (the shape of the electronic component 4) with excellent adhesion (air density). In this state, the substrate 5 and the electronic component 4 are covered with the sealing film 100 in a softened state.
In the heating and depressurizing step, the pressing step can be omitted if the sealing film 100 sufficiently follows the shape of the irregularities 6.
 この際、封止用フィルム100の軟化点における伸び率が150%以上3500%以下となっているのが好ましい。これにより、封止用フィルム100は、この加圧時に、電子部品搭載基板45に形成された凹凸6に対してより優れた形状追従性をもって伸展させることができる。そのため、軟化した状態の封止用フィルム100により、基板5の上側において基板5と電子部品4とを優れた密着性をもって被覆することができる。 At this time, the elongation at the softening point of the sealing film 100 is preferably 150% or more and 3500% or less. Thereby, the film 100 for sealing can be extended with the more excellent shape followability with respect to the unevenness | corrugation 6 formed in the electronic component mounting board | substrate 45 at the time of this pressurization. Therefore, the substrate 5 and the electronic component 4 can be coated on the upper side of the substrate 5 with excellent adhesion by the softened sealing film 100.
 そして、封止用フィルム100により、基板5と電子部品4とを優れた密着性(気密性)をもって被覆し、かつ、接続部材7が逃げ部27から露出した状態で、封止用フィルム100を冷却することで、この状態を維持したまま、封止用フィルム100が固化する。 The sealing film 100 is covered with the sealing film 100 with excellent adhesion (airtightness) and the connecting member 7 is exposed from the escape portion 27. By cooling, the sealing film 100 is solidified while maintaining this state.
 これにより、電子部品搭載基板45に形成された凹凸6の形状に追従した状態で、封止用フィルム100により、基板5の上側において最内層12が接触して基板5と電子部品4とが被覆され、かつ、接続部材7が逃げ部27から露出した封止用フィルム被覆電子部品搭載基板50が得られることとなる。そのため、この封止用フィルム被覆電子部品搭載基板50において、湿気や埃等の外部因子と電子部品4が接触するのを的確に抑制または防止することができる。したがって、得られる封止用フィルム被覆電子部品搭載基板50ひいてはこの封止用フィルム被覆電子部品搭載基板50を備える電子機器の信頼性の向上が図られる。 As a result, the innermost layer 12 comes into contact with the upper side of the substrate 5 and the substrate 5 and the electronic component 4 are covered by the sealing film 100 while following the shape of the unevenness 6 formed on the electronic component mounting substrate 45. In addition, the sealing film-covered electronic component mounting substrate 50 in which the connection member 7 is exposed from the escape portion 27 is obtained. Therefore, in the sealing film-covered electronic component mounting substrate 50, it is possible to accurately suppress or prevent the electronic component 4 from coming into contact with external factors such as moisture and dust. Accordingly, the reliability of the obtained electronic device including the sealing film-covered electronic component mounting substrate 50 and thus the sealing film-covered electronic component mounting substrate 50 can be improved.
 また、上記のように、得られた封止用フィルム被覆電子部品搭載基板50において、接続部材7が逃げ部27から露出しているため、電子部品搭載基板45と他の電子部品や電源との電気的な接続を実現することができる。 Further, as described above, in the obtained sealing film-covered electronic component mounting board 50, since the connecting member 7 is exposed from the escape portion 27, the electronic component mounting board 45 and other electronic components or power supply are not connected. An electrical connection can be realized.
 なお、封止用フィルム100の冷却と、雰囲気の加圧とは、加圧の後に冷却してもよいが、冷却と加圧とをほぼ同時に行うことが好ましい。これにより、凹凸6の形状に対応して、封止用フィルム100をより優れた密着性をもって被覆させることができる。 In addition, although cooling of the film 100 for sealing and pressurization of an atmosphere may be cooled after pressurization, it is preferable to perform cooling and pressurization substantially simultaneously. Thereby, the film 100 for sealing can be coat | covered with the more excellent adhesiveness corresponding to the shape of the unevenness | corrugation 6. FIG.
 上記の工程を経ることで、封止用フィルム100により、基板5と電子部品4とが被覆され、かつ、接続部材7が逃げ部27から露出した封止用フィルム被覆電子部品搭載基板50を得ることができる。 By passing through the above steps, the sealing film-covered electronic component mounting substrate 50 in which the substrate 5 and the electronic component 4 are covered with the sealing film 100 and the connection member 7 is exposed from the escape portion 27 is obtained. be able to.
 <第12実施形態>
 次に、本発明の封止用フィルム100の第12実施形態について説明する。
<Twelfth embodiment>
Next, a twelfth embodiment of the sealing film 100 of the present invention will be described.
 図25は、本発明の封止用フィルムの第12実施形態を示す図((a)縦断面図、(b)平面図)、図26(a)~(c)は、図25に示す封止用フィルムを用いて電子部品搭載基板の封止方法を説明するための縦断面図である。なお、以下の説明では、説明の便宜上、図25、図26中の上側を「上」、下側を「下」と言う。 FIG. 25 is a view showing a twelfth embodiment of the sealing film of the present invention ((a) longitudinal sectional view, (b) plan view), and FIGS. 26 (a) to 26 (c) are views shown in FIG. It is a longitudinal cross-sectional view for demonstrating the sealing method of an electronic component mounting board | substrate using a film for a stop. In the following description, for convenience of description, the upper side in FIGS. 25 and 26 is referred to as “upper” and the lower side is referred to as “lower”.
 以下、第12実施形態について説明するが、前記第1~第11実施形態および第1参考形態と異なる点を中心に説明し、同様の事項についてはその説明を省略する。 Hereinafter, the twelfth embodiment will be described. The description will focus on differences from the first to eleventh embodiments and the first reference embodiment, and the description of the same matters will be omitted.
 第12実施形態では、封止用フィルム100が、中間層19に代えて、電磁波シールド性を有する電磁波シールド層13を備える積層体で構成され、それ以外は、前記第1参考形態と同様である。 In 12th Embodiment, it replaces with the intermediate | middle layer 19, and the film 100 for sealing is comprised by the laminated body provided with the electromagnetic wave shielding layer 13 which has electromagnetic wave shielding properties, and other than that is the same as that of the said 1st reference form. .
 封止用フィルム100は、本実施形態では、図25、図26に示すように、絶縁層(最内層)12と、この絶縁層12の一方の面側(上面側)に積層された電磁波シールド層13と、電磁波シールド層13の一方の面側に積層された被覆層(最外層)14とを備える積層体で構成されている。すなわち、絶縁層12と、電磁波シールド層13と、被覆層14とは、被覆すべき電子部品搭載基板45側から、この順で、積層されている。 In this embodiment, the sealing film 100 includes an insulating layer (innermost layer) 12 and an electromagnetic wave shield laminated on one surface side (upper surface side) of the insulating layer 12 as shown in FIGS. It is comprised with the laminated body provided with the layer 13 and the coating layer (outermost layer) 14 laminated | stacked on the one surface side of the electromagnetic wave shield layer 13. FIG. That is, the insulating layer 12, the electromagnetic wave shielding layer 13, and the coating layer 14 are laminated in this order from the electronic component mounting substrate 45 side to be coated.
 このように電子部品4が上面側に搭載された電子部品搭載基板45に対して、絶縁層12を下側とし、被覆層14を上側にして、封止用フィルム100を用いて被覆すると、電子部品4は、絶縁層12を介して電磁波シールド層13で封止される。そのため、得られた封止用フィルム被覆電子部品搭載基板50は、電子部品4への電磁波によるノイズの影響が的確に抑制または防止されたものとなる。 When the electronic component mounting substrate 45 on which the electronic component 4 is mounted on the upper surface is coated with the sealing film 100 with the insulating layer 12 on the lower side and the coating layer 14 on the upper side, The component 4 is sealed with the electromagnetic wave shielding layer 13 through the insulating layer 12. Therefore, in the obtained film-covered electronic component mounting substrate 50 for sealing, the influence of noise due to electromagnetic waves on the electronic component 4 is accurately suppressed or prevented.
 また、電子部品4は、絶縁性を有する絶縁層12を介して電磁波シールド層13により封止されていることから、電磁波シールド層13は、この電子部品4に対する絶縁性が確保されたものとなる。さらに、電磁波シールド層13は、電子部品4と反対側の面において、絶縁性を有する被覆層14により被覆されている。そのため、電磁波シールド層13は、得られた封止用フィルム被覆電子部品搭載基板50の外側に位置する他の電子部品に対しても、絶縁性が確保されたものとなる。 In addition, since the electronic component 4 is sealed by the electromagnetic wave shielding layer 13 via the insulating layer 12 having insulation properties, the electromagnetic wave shielding layer 13 is ensured to be insulated from the electronic component 4. . Furthermore, the electromagnetic wave shielding layer 13 is covered with an insulating coating layer 14 on the surface opposite to the electronic component 4. For this reason, the electromagnetic wave shielding layer 13 is also provided with insulation against other electronic components located outside the obtained sealing film-covered electronic component mounting substrate 50.
 また、このような封止用フィルム100は、絶縁層12、電磁波シールド層13および被覆層14が、何れも、樹脂材料を含有し、前記第1実施形態と同様に、JIS K 6251に準拠して求められる軟化点における伸び率が150%以上3500%以下であるが、1000%以上3500%以下であるのが好ましい。 Further, in such a sealing film 100, the insulating layer 12, the electromagnetic wave shielding layer 13 and the coating layer 14 all contain a resin material, and conform to JIS K 6251 as in the first embodiment. The elongation at the softening point required is 150% or more and 3500% or less, preferably 1000% or more and 3500% or less.
 そのため、本実施形態においても、以下では、かかる伸び率を満足する封止用フィルム100が備える絶縁層12、電磁波シールド層13および被覆層14の層構成について説明する。 Therefore, also in this embodiment, hereinafter, the layer configuration of the insulating layer 12, the electromagnetic wave shielding layer 13, and the coating layer 14 included in the sealing film 100 that satisfies the elongation rate will be described.
 前記軟化点における伸び率が150%以上3500%以下となっている封止用フィルム100が備える絶縁層12、電磁波シールド層13および被覆層14は、それぞれが前記第1実施形態で説明したのと同様の樹脂材料を含有する。 The insulating layer 12, the electromagnetic wave shielding layer 13 and the coating layer 14 included in the sealing film 100 having an elongation at the softening point of 150% or more and 3500% or less are as described in the first embodiment. The same resin material is contained.
 また、封止用フィルム100の前記軟化点における伸び率を前記範囲内とするために、樹脂材料を含有する絶縁層12、電磁波シールド層13および被覆層14のうち、絶縁層12および被覆層14は、前記樹脂材料(熱可塑性樹脂)を主材料として含有する層で構成され、電磁波シールド層13は、前記樹脂材料(熱可塑性樹脂)と、導電性を備える導電性粒子とを含有する層で構成される。絶縁層12、電磁波シールド層13および被覆層14をかかる構成のものとすることで、絶縁層12および被覆層14は、それぞれ、絶縁性を有する絶縁層および被覆層として機能し、電磁波シールド層13は、電磁波シールド性さらには導電性を有する電磁波シールド層として機能する。 Moreover, in order to make elongation rate in the said softening point of the film 100 for sealing into the said range, the insulating layer 12 and the coating layer 14 among the insulating layer 12, the electromagnetic wave shielding layer 13, and the coating layer 14 containing a resin material are included. Is composed of a layer containing the resin material (thermoplastic resin) as a main material, and the electromagnetic wave shielding layer 13 is a layer containing the resin material (thermoplastic resin) and conductive particles having conductivity. Composed. By having the insulating layer 12, the electromagnetic wave shielding layer 13 and the covering layer 14 in such a configuration, the insulating layer 12 and the covering layer 14 function as an insulating layer and a covering layer having insulating properties, respectively. Functions as an electromagnetic wave shielding layer having an electromagnetic wave shielding property and further conductivity.
 上記のような構成をなす、何れも樹脂材料を含有する絶縁層12、電磁波シールド層13および被覆層14を備える封止用フィルム100は、前記第1実施形態と同様に、前述した樹脂材料のうちポリオレフィン系樹脂を前記樹脂材料として含有する層を、絶縁層12、電磁波シールド層13および被覆層14のうちの少なくとも1層として備えることが好ましい。これにより、封止用フィルム100の軟化点における伸び率をより確実に150%以上3500%以下に設定することができる。 The sealing film 100 including the insulating layer 12, the electromagnetic wave shielding layer 13, and the coating layer 14 each including the resin material, having the above-described configuration, is made of the resin material described above, as in the first embodiment. Of these, a layer containing a polyolefin-based resin as the resin material is preferably provided as at least one of the insulating layer 12, the electromagnetic wave shielding layer 13, and the coating layer 14. Thereby, the elongation at the softening point of the sealing film 100 can be set to 150% or more and 3500% or less more reliably.
 そこで、以下では、前記樹脂材料を主材料として含有する絶縁層12および被覆層14と、前記樹脂材料と導電性粒子とを含有する電磁波シールド層13とを備え、絶縁層12および被覆層14に含まれる樹脂材料がともにポリオレフィン系樹脂である封止用フィルム100を、一例として説明する。 Therefore, in the following, the insulating layer 12 and the covering layer 14 containing the resin material as main materials, and the electromagnetic wave shielding layer 13 containing the resin material and conductive particles are provided. The sealing film 100 in which both of the resin materials included are polyolefin resins will be described as an example.
 絶縁層12は、封止用フィルム100の軟化点における伸び率を150%以上3500%以下に設定して、凹凸6への密着性および形状追従性に優れたものとすることを目的に、本実施形態では、ポリオレフィン系樹脂(エチレン共重合体)としてのエチレン-酢酸ビニル共重合体を主材料として含有する層である。 For the purpose of the insulating layer 12, the elongation at the softening point of the sealing film 100 is set to 150% or more and 3500% or less so that the adhesiveness to the unevenness 6 and the shape followability are excellent. In the embodiment, the layer contains an ethylene-vinyl acetate copolymer as a polyolefin resin (ethylene copolymer) as a main material.
 また、この絶縁層12は、樹脂材料としてエチレン-酢酸ビニル共重合体を主材料として含有することで、絶縁性を備える層であり、電子部品搭載基板45を封止用フィルム100で被覆する際に、電子部品4と導電性を有する電磁波シールド層13との間に介在することで、電子部品4同士、さらには電子部品4と電極3との間で短絡が生じるのを防止するための絶縁層として機能する。 The insulating layer 12 is a layer having an insulating property by containing an ethylene-vinyl acetate copolymer as a main material as a resin material. When the electronic component mounting substrate 45 is covered with the sealing film 100, Furthermore, by interposing between the electronic component 4 and the electromagnetic wave shielding layer 13 having conductivity, insulation for preventing short circuit between the electronic components 4 and between the electronic component 4 and the electrode 3 is prevented. Acts as a layer.
 このエチレン-酢酸ビニル共重合体としては、前記第1実施形態と同様に、共重合されるVA含有量が5重量%以上30重量%以下であることが好ましく、10重量%以上20重量%以下であることがより好ましい。 In the ethylene-vinyl acetate copolymer, the VA content to be copolymerized is preferably 5% by weight to 30% by weight, as in the first embodiment, and is preferably 10% by weight to 20% by weight. It is more preferable that
 また、絶縁層12の平均厚さは、前記第1実施形態と同様に、5μm以上200μm以下であることが好ましく、20μm以上120μm以下であることがより好ましい。これにより、電磁波シールド層13の電子部品4に対する絶縁性をより確実に確保することができる。 Further, the average thickness of the insulating layer 12 is preferably 5 μm or more and 200 μm or less, and more preferably 20 μm or more and 120 μm or less, as in the first embodiment. Thereby, the insulation with respect to the electronic component 4 of the electromagnetic wave shield layer 13 can be ensured more reliably.
 電磁波シールド層13は、封止用フィルム100の軟化点における伸び率を150%以上3500%以下に設定して、凹凸6への密着性および形状追従性に優れたものとすること、さらには、封止用フィルム100を強靱性に優れたものとすることを目的に、本実施形態では、樹脂材料としてアイオノマー樹脂を含有する。また、樹脂材料(アイオノマー)は、下記の導電性材料を層中に保持するバインダーとしても機能する。 The electromagnetic wave shielding layer 13 has an elongation at the softening point of the sealing film 100 set to 150% or more and 3500% or less, and has excellent adhesion to the unevenness 6 and shape followability, For the purpose of making the sealing film 100 excellent in toughness, in this embodiment, an ionomer resin is contained as a resin material. The resin material (ionomer) also functions as a binder that holds the following conductive material in the layer.
 また、電磁波シールド層13は、樹脂材料としてアイオノマー樹脂の他に、さらに、導電性を有する導電性粒子を含有することで、電磁波シールド性さらには導電性を備える層である。 Further, the electromagnetic wave shielding layer 13 is a layer having electromagnetic wave shielding properties and further conductivity by containing conductive particles having conductivity in addition to the ionomer resin as a resin material.
 このような電磁波シールド層13により、電子部品搭載基板45を封止用フィルム100で被覆する際に、絶縁層12を介して、基板5の上側に配置された電子部品4が被覆される。そのため、電子部品搭載基板45を封止用フィルム100で被覆することで得られる封止用フィルム被覆電子部品搭載基板50を、電子部品4への電磁波によるノイズの影響が的確に抑制または防止されたものとすることができる。 Such an electromagnetic wave shielding layer 13 covers the electronic component 4 disposed on the upper side of the substrate 5 via the insulating layer 12 when the electronic component mounting substrate 45 is covered with the sealing film 100. Therefore, the influence of noise due to electromagnetic waves on the electronic component 4 is accurately suppressed or prevented in the sealing film-covered electronic component mounting substrate 50 obtained by covering the electronic component mounting substrate 45 with the sealing film 100. Can be.
 樹脂材料としてのアイオノマー樹脂としては、前記第1実施形態で説明したのと同様のものを用いることができる。 As the ionomer resin as the resin material, the same resin as described in the first embodiment can be used.
 また、導電性粒子としても、前記第1実施形態で説明したのと同様のものを用いることができる。 Also, the same conductive particles as those described in the first embodiment can be used.
 また、電磁波シールド層13中における導電性粒子の含有量は、10重量%以上95重量%以下であることが好ましく、50重量%以上90重量%以下であることがより好ましい。導電性粒子の含有量をかかる範囲内に設定することにより、電磁波シールド層13に電磁波シールド性さらには導電性を確実に付与しつつ、封止用フィルム100の軟化点における伸び率を150%以上3500%以下の範囲内に確実に設定することができる。 Further, the content of the conductive particles in the electromagnetic wave shielding layer 13 is preferably 10% by weight or more and 95% by weight or less, and more preferably 50% by weight or more and 90% by weight or less. By setting the content of the conductive particles within such a range, the electromagnetic wave shielding layer 13 is reliably imparted with electromagnetic wave shielding property and further conductivity, and the elongation at the softening point of the sealing film 100 is 150% or more. It can be reliably set within a range of 3500% or less.
 また、電磁波シールド層13の平均厚さは、1μm以上400μm以下であることが好ましく、5μm以上200μm以下であることがより好ましい。電磁波シールド層13の平均厚さをかかる範囲内に設定することにより、封止用フィルム100を強靱性に優れ、かつ、封止用フィルム100の軟化点における伸び率を150%以上3500%以下の範囲内に確実に設定することができる。さらに、電磁波シールド層13に、電磁波シールド性さらには導電性を確実に付与することができる。 Further, the average thickness of the electromagnetic wave shielding layer 13 is preferably 1 μm or more and 400 μm or less, and more preferably 5 μm or more and 200 μm or less. By setting the average thickness of the electromagnetic wave shielding layer 13 within such a range, the sealing film 100 is excellent in toughness, and the elongation at the softening point of the sealing film 100 is 150% or more and 3500% or less. It can be reliably set within the range. Furthermore, the electromagnetic wave shielding layer 13 can be reliably imparted with electromagnetic wave shielding properties and further conductivity.
 なお、電磁波シールド層13に含まれる樹脂材料としては、アイオノマー樹脂の他、絶縁層12および被覆層14に含まれるエチレン-酢酸ビニル共重合体や、それ以外のポリオレフィン系樹脂であってもよい。 The resin material contained in the electromagnetic shielding layer 13 may be an ionomer resin, an ethylene-vinyl acetate copolymer contained in the insulating layer 12 and the coating layer 14, or other polyolefin resin.
 被覆層14は、封止用フィルム100の軟化点における伸び率を150%以上3500%以下に設定して、凹凸6への密着性および形状追従性に優れたものとすることを目的に、本実施形態では、ポリオレフィン系樹脂(エチレン共重合体)としてのエチレン-酢酸ビニル共重合体を主材料として含有する層である。 For the purpose of the coating layer 14, the elongation at the softening point of the sealing film 100 is set to 150% or more and 3500% or less, and the coating layer 14 is excellent in adhesion to the unevenness 6 and shape followability. In the embodiment, the layer contains an ethylene-vinyl acetate copolymer as a polyolefin resin (ethylene copolymer) as a main material.
 また、被覆層14は、樹脂材料としてエチレン-酢酸ビニル共重合体を主材料として含有することで、絶縁性を備える層であり、電子部品搭載基板45を封止用フィルム100で被覆する際に、導電性を有する電磁波シールド層13の電子部品4と反対の面側を被覆することで、電子部品搭載基板45の外側に位置する他の電子部品に対する絶縁性を確保するための被覆層として機能する。 The coating layer 14 is a layer having an insulating property by containing an ethylene-vinyl acetate copolymer as a resin material as a main material. When the electronic component mounting substrate 45 is covered with the sealing film 100, By covering the surface of the electromagnetic shielding layer 13 having conductivity opposite to the electronic component 4, it functions as a coating layer for ensuring insulation against other electronic components located outside the electronic component mounting board 45. To do.
 このエチレン-酢酸ビニル共重合体としては、共重合されるVA含有量は、前記第1実施形態の絶縁層12で示した共重合されるVA含有量と同様の範囲内に設定される。 In this ethylene-vinyl acetate copolymer, the VA content to be copolymerized is set within the same range as the VA content to be copolymerized shown in the insulating layer 12 of the first embodiment.
 また、被覆層14の平均厚さは、5μm以上200μm以下であることが好ましく、20μm以上120μm以下であることがより好ましい。これにより、封止用フィルム被覆電子部品搭載基板50の外側に位置する電子部品に対する電磁波シールド層13の絶縁性をより確実に確保することができる。 The average thickness of the coating layer 14 is preferably 5 μm or more and 200 μm or less, and more preferably 20 μm or more and 120 μm or less. Thereby, the insulation of the electromagnetic wave shield layer 13 with respect to the electronic component located outside the sealing film-covered electronic component mounting substrate 50 can be more reliably ensured.
 なお、被覆層14に含まれる樹脂材料としては、絶縁層12と同様に、ポリオレフィン系樹脂(エチレン共重合体)としてのエチレン-酢酸ビニル共重合体の他、前述した電磁波シールド層13に含まれるアイオノマー樹脂であってもよいし、エチレン-酢酸ビニル共重合体以外のポリオレフィン系樹脂であってもよい。 The resin material contained in the coating layer 14 is contained in the electromagnetic wave shielding layer 13 as well as the ethylene-vinyl acetate copolymer as a polyolefin resin (ethylene copolymer), as in the case of the insulating layer 12. It may be an ionomer resin or a polyolefin resin other than an ethylene-vinyl acetate copolymer.
 また、封止用フィルム100では、絶縁層12と電磁波シールド層13との間、および、電磁波シールド層13と被覆層14との間には、接着性を付与したり、あるいは接着性を高めるために必要に応じて接着層を設けるようにすることもできる。また、絶縁層12と電子部品搭載基板45との間の接着性を高めるために、必要に応じて絶縁層12の内側、すなわち絶縁層12と基板5との間に接着層を設けることもできる。 Moreover, in the sealing film 100, in order to provide adhesiveness between the insulating layer 12 and the electromagnetic wave shielding layer 13, and between the electromagnetic wave shielding layer 13 and the coating layer 14, or to improve adhesiveness. If necessary, an adhesive layer may be provided. Moreover, in order to improve the adhesiveness between the insulating layer 12 and the electronic component mounting substrate 45, an adhesive layer can be provided inside the insulating layer 12, that is, between the insulating layer 12 and the substrate 5, as necessary. .
 さらに、接着層に含まれる接着性樹脂としては、前記第1実施形態で説明したのと同様の樹脂を用いることができる。 Furthermore, as the adhesive resin contained in the adhesive layer, the same resin as described in the first embodiment can be used.
 [電子部品搭載基板の封止方法]
 次に、上述した第12実施形態の封止用フィルムを用いた電子部品搭載基板の封止方法について説明する。
[Method of sealing electronic component mounting board]
Next, a method for sealing an electronic component mounting substrate using the sealing film of the twelfth embodiment described above will be described.
 本実施形態の電子部品搭載基板の封止方法は、基板5と電子部品4とを覆い、かつ、接続部材7に逃げ部27が対応するように、絶縁層12を電子部品搭載基板45側にして封止用フィルム100を電子部品搭載基板45上に配置する配置工程と、封止用フィルム100を加熱し軟化させるとともに、減圧する加熱・減圧工程と、封止用フィルム100を冷却させるとともに、加圧することで、基板5と電子部品4とを封止用フィルム100で封止する冷却・加圧工程とを有する。 In the sealing method of the electronic component mounting substrate of the present embodiment, the insulating layer 12 is placed on the electronic component mounting substrate 45 side so as to cover the substrate 5 and the electronic component 4 and the escape portion 27 corresponds to the connecting member 7. While placing the sealing film 100 on the electronic component mounting substrate 45, heating and softening the sealing film 100, heating and decompressing the pressure, and cooling the sealing film 100, It has the cooling and pressurization process which seals the board | substrate 5 and the electronic component 4 with the film 100 for sealing by pressurizing.
 以下、電子部品搭載基板の封止方法の各工程について、順次説明する。
(配置工程)
 まず、図26(a)に示すように、封止用フィルム100が備える絶縁層12、電磁波シールド層13および被覆層14のうち絶縁層12を、電子部品搭載基板45に対向させた状態で、電子部品搭載基板45が備える基板5と電子部品4とを覆い、かつ、接続部材7に逃げ部27が対応するように、封止用フィルム100を電子部品搭載基板45上に配置する(図26(b))。
Hereafter, each process of the sealing method of an electronic component mounting substrate is demonstrated sequentially.
(Arrangement process)
First, as shown in FIG. 26A, the insulating layer 12 of the insulating film 12, the electromagnetic wave shielding layer 13, and the coating layer 14 included in the sealing film 100 is opposed to the electronic component mounting substrate 45. The sealing film 100 is disposed on the electronic component mounting substrate 45 so as to cover the substrate 5 and the electronic component 4 included in the electronic component mounting substrate 45 and so that the escape portion 27 corresponds to the connecting member 7 (FIG. 26). (B)).
(加熱・減圧工程)
 次に、図26(b)に示す状態を維持したまま、封止用フィルム100を加熱し軟化させるとともに、減圧する。
(Heating and decompression process)
Next, the sealing film 100 is heated and softened while maintaining the state shown in FIG.
 このように、封止用フィルム100を加熱することにより、封止用フィルム100すなわち絶縁層12、電磁波シールド層13および被覆層14が軟化し、その結果、基板5の上面側では、基板5に電子部品4を搭載することにより形成された凹凸6の形状に対して、追従し得る状態となる。 Thus, by heating the sealing film 100, the sealing film 100, that is, the insulating layer 12, the electromagnetic wave shielding layer 13, and the coating layer 14 are softened. As a result, on the upper surface side of the substrate 5, It will be in the state which can follow the shape of the unevenness | corrugation 6 formed by mounting the electronic component 4. FIG.
 また、この際、電子部品搭載基板45および封止用フィルム100を、減圧雰囲気下に配置することで、封止用フィルム100の外側ばかりでなく、電子部品搭載基板45と封止用フィルム100との間の気体(空気)が脱気される。 At this time, the electronic component mounting substrate 45 and the sealing film 100 are arranged in a reduced-pressure atmosphere, so that not only the outside of the sealing film 100 but also the electronic component mounting substrate 45 and the sealing film 100 The gas (air) in between is degassed.
 これにより、封止用フィルム100が伸展しながら、基板5の上側では、凹凸6の形状、すなわち、基板5上の電子部品4の形状に若干追従した状態となる。 Thus, while the sealing film 100 is extended, the shape of the unevenness 6, that is, the shape of the electronic component 4 on the substrate 5 is slightly followed on the upper side of the substrate 5.
 本工程により、電子部品搭載基板45の上面側に形成された凹凸6の形状に対して、封止用フィルム100を、追従し得る状態とすることができる。 By this step, the sealing film 100 can be made to follow the shape of the irregularities 6 formed on the upper surface side of the electronic component mounting substrate 45.
 なお、封止用フィルム100の加熱と、雰囲気の減圧とは、加熱の後に減圧してもよく、減圧の後に加熱してもよいが、加熱と減圧とをほぼ同時に行うことが好ましい。これにより、軟化した封止用フィルム100を、凹凸6の形状に確実に若干追従した状態とすることができる。 The heating of the sealing film 100 and the reduced pressure of the atmosphere may be reduced after the heating or may be heated after the reduced pressure, but it is preferable to perform the heating and the reduced pressure almost simultaneously. Thereby, the softened film 100 for sealing can be made into the state which followed the shape of the unevenness | corrugation 6 a little reliably.
(冷却・加圧工程)
 次に、図26(c)に示すように、封止用フィルム100を冷却させるとともに、加圧する。
(Cooling / pressurization process)
Next, as shown in FIG. 26C, the sealing film 100 is cooled and pressurized.
 このように、減圧された雰囲気から加圧することで、前記加熱・減圧工程において、電子部品搭載基板45と封止用フィルム100との間が脱気され、減圧状態が維持されていることから、封止用フィルム100がさらに伸展することとなる。 Thus, by pressurizing from the decompressed atmosphere, in the heating and decompression step, the space between the electronic component mounting substrate 45 and the sealing film 100 is degassed, and the decompressed state is maintained. The sealing film 100 is further extended.
 その結果、基板5の上側では、接続部材7が逃げ部27から露出して封止されることなく、凹凸6の形状(電子部品4の形状)に優れた密着度(気密度)で追従した状態で、軟化した状態の封止用フィルム100により、基板5と電子部品4とが被覆される。
 なお、前記加熱減圧工程において、凹凸6の形状に対応して封止用フィルム100が十分追従していれば、加圧工程を省略することができる。
As a result, on the upper side of the substrate 5, the connection member 7 is not exposed and sealed from the escape portion 27, and follows the shape of the unevenness 6 (the shape of the electronic component 4) with excellent adhesion (air density). In this state, the substrate 5 and the electronic component 4 are covered with the sealing film 100 in a softened state.
In the heating and depressurizing step, the pressing step can be omitted if the sealing film 100 sufficiently follows the shape of the irregularities 6.
 この際、封止用フィルム100の軟化点における伸び率が150%以上3500%以下となっているのが好ましい。これにより、封止用フィルム100は、この加圧時に、電子部品搭載基板45に形成された凹凸6に対してより優れた形状追従性をもって伸展させることができるため、軟化した状態の封止用フィルム100により、基板5の上側において基板5と電子部品4とを優れた密着性をもって被覆することができる。 At this time, the elongation at the softening point of the sealing film 100 is preferably 150% or more and 3500% or less. Thereby, since the film 100 for sealing can be extended with the more excellent shape followable | trackability with respect to the unevenness | corrugation 6 formed in the electronic component mounting board | substrate 45 at the time of this pressurization, for the sealing of the softened state With the film 100, the substrate 5 and the electronic component 4 can be coated on the upper side of the substrate 5 with excellent adhesion.
 そして、封止用フィルム100により、基板5と電子部品4とを優れた密着性(気密性)をもって被覆し、かつ、接続部材7が逃げ部27から露出した状態で、封止用フィルム100を冷却することで、この状態を維持したまま、封止用フィルム100が固化する。 The sealing film 100 is covered with the sealing film 100 with excellent adhesion (airtightness) and the connecting member 7 is exposed from the escape portion 27. By cooling, the sealing film 100 is solidified while maintaining this state.
 これにより、電子部品搭載基板45に形成された凹凸6の形状に追従した状態で、封止用フィルム100により、基板5の上側において絶縁層12が接触して基板5と電子部品4とが被覆され、かつ、接続部材7が逃げ部27から露出した封止用フィルム被覆電子部品搭載基板50が得られることとなる。そのため、この封止用フィルム被覆電子部品搭載基板50において、湿気や埃等の外部因子と電子部品4が接触するのを的確に抑制または防止することができる。したがって、得られる封止用フィルム被覆電子部品搭載基板50ひいてはこの封止用フィルム被覆電子部品搭載基板50を備える電子機器の信頼性の向上が図られる。 As a result, the insulating layer 12 contacts the upper side of the substrate 5 and the substrate 5 and the electronic component 4 are covered by the sealing film 100 in a state of following the shape of the unevenness 6 formed on the electronic component mounting substrate 45. In addition, the sealing film-covered electronic component mounting substrate 50 in which the connection member 7 is exposed from the escape portion 27 is obtained. Therefore, in the sealing film-covered electronic component mounting substrate 50, it is possible to accurately suppress or prevent the electronic component 4 from coming into contact with external factors such as moisture and dust. Accordingly, the reliability of the obtained electronic device including the sealing film-covered electronic component mounting substrate 50 and thus the sealing film-covered electronic component mounting substrate 50 can be improved.
 また、上記のように、得られた封止用フィルム被覆電子部品搭載基板50において、接続部材7が逃げ部27から露出しているため、電子部品搭載基板45と他の電子部品や電源との電気的な接続を実現することができる。 Further, as described above, in the obtained sealing film-covered electronic component mounting board 50, since the connecting member 7 is exposed from the escape portion 27, the electronic component mounting board 45 and other electronic components or power supply are not connected. An electrical connection can be realized.
 さらに、上記のような電子部品搭載基板45の被覆に用いられる封止用フィルム100は、絶縁層12と電磁波シールド層13と被覆層14との積層体で構成される。 Furthermore, the sealing film 100 used for covering the electronic component mounting substrate 45 as described above is composed of a laminate of the insulating layer 12, the electromagnetic wave shielding layer 13, and the covering layer 14.
 そのため、本工程において、絶縁層12を介して、電子部品4が電磁波シールド層13により被覆される。したがって、得られる封止用フィルム被覆電子部品搭載基板50を、電子部品4への電磁波によるノイズの影響が的確に抑制または防止されたものとすることができる。 Therefore, in this step, the electronic component 4 is covered with the electromagnetic wave shielding layer 13 through the insulating layer 12. Therefore, the obtained film-covered electronic component mounting substrate 50 for sealing can be one in which the influence of noise due to electromagnetic waves on the electronic component 4 is appropriately suppressed or prevented.
 また、電子部品4は、絶縁層12を介して電磁波シールド層13により封止されることから、電磁波シールド層13は、この電子部品4に対する絶縁性を確保した状態で、電子部品4を被覆することができる。また、電磁波シールド層13は、電子部品4と反対側の面において、被覆層14により被覆されていることから、電磁波シールド層13は、得られる封止用フィルム被覆電子部品搭載基板50の外側に位置する他の電子部品に対しても、絶縁性が確保された状態で電子部品搭載基板45を被覆することができる。 Further, since the electronic component 4 is sealed by the electromagnetic wave shielding layer 13 through the insulating layer 12, the electromagnetic wave shielding layer 13 covers the electronic component 4 in a state in which insulation against the electronic component 4 is secured. be able to. Moreover, since the electromagnetic wave shielding layer 13 is covered with the coating layer 14 on the surface opposite to the electronic component 4, the electromagnetic wave shielding layer 13 is disposed outside the obtained film-covered electronic component mounting substrate 50 for sealing. The electronic component mounting substrate 45 can be covered with insulation of other electronic components that are positioned.
 なお、封止用フィルム100の冷却と、雰囲気の加圧とは、加圧の後に冷却してもよいが、冷却と加圧とをほぼ同時に行うことが好ましい。これにより、凹凸6の形状に対応して、封止用フィルム100をより優れた密着性をもって被覆させることができる。 In addition, although cooling of the film 100 for sealing and pressurization of an atmosphere may be cooled after pressurization, it is preferable to perform cooling and pressurization substantially simultaneously. Thereby, the film 100 for sealing can be coat | covered with the more excellent adhesiveness corresponding to the shape of the unevenness | corrugation 6. FIG.
 上記の工程を経ることで、封止用フィルム100により、基板5と電子部品4とが被覆され、かつ、接続部材7が逃げ部27から露出した封止用フィルム被覆電子部品搭載基板50を得ることができる。 By passing through the above steps, the sealing film-covered electronic component mounting substrate 50 in which the substrate 5 and the electronic component 4 are covered with the sealing film 100 and the connection member 7 is exposed from the escape portion 27 is obtained. be able to.
 <第13実施形態>
 [封止用フィルム]
 次に、本発明の封止用フィルム100の第13実施形態について説明する。
<13th Embodiment>
[Sealing film]
Next, a thirteenth embodiment of the sealing film 100 of the present invention will be described.
 図27は、本発明の封止用フィルムの第13実施形態を示す図((a)縦断面図、(b)平面図)、図28は、図27に示す封止用フィルムを用いて電子部品搭載基板の封止方法を説明するための縦断面図である。なお、以下の説明では、説明の便宜上、図27、図28中の上側を「上」、下側を「下」と言う。 FIG. 27 is a diagram ((a) longitudinal sectional view, (b) plan view) showing a thirteenth embodiment of the sealing film of the present invention, and FIG. 28 is an electron using the sealing film shown in FIG. It is a longitudinal cross-sectional view for demonstrating the sealing method of a component mounting board. In the following description, for convenience of description, the upper side in FIGS. 27 and 28 is referred to as “upper” and the lower side is referred to as “lower”.
 以下、第13実施形態について説明するが、前記第12実施形態と異なる点を中心に説明し、同様の事項についてはその説明を省略する。 Hereinafter, the thirteenth embodiment will be described. However, the description will focus on points different from the twelfth embodiment, and the description of the same matters will be omitted.
 第13実施形態では、封止用フィルム100が備える被覆層14の構成が異なり、それ以外は、前記第12実施形態と同様である。 In 13th Embodiment, the structure of the coating layer 14 with which the film 100 for sealing is provided differs, and other than that is the same as that of the said 12th Embodiment.
 第13実施形態の封止用フィルム100において、被覆層14は、図27、図28に示すように、電磁波シールド層13よりも大きく形成され、その端部が電磁波シールド層13の端部(縁部)から露出すること、換言すれば、電磁波シールド層13の端部を越えて突出することで形成された突出部15(第1突出部)を備えている。 In the sealing film 100 of the thirteenth embodiment, the covering layer 14 is formed larger than the electromagnetic wave shielding layer 13 as shown in FIGS. 27 and 28, and the end portion thereof is the end portion (edge) of the electromagnetic wave shielding layer 13. In other words, a protrusion 15 (first protrusion) formed by protruding beyond the end of the electromagnetic wave shielding layer 13 is provided.
 このような封止用フィルム100を用いて、電子部品4および接続部材7が上面(一方の面)側に搭載された電子部品搭載基板45に対して、絶縁層12を下側とし被覆層14を上側にして被覆すると、接続部材7が逃げ部27から露出して封止されることなく、電子部品4は、絶縁層12を介して電磁波シールド層13で封止される。 Using such a sealing film 100, the coating layer 14 has the insulating layer 12 on the lower side with respect to the electronic component mounting substrate 45 on which the electronic component 4 and the connection member 7 are mounted on the upper surface (one surface) side. The electronic component 4 is sealed with the electromagnetic wave shielding layer 13 through the insulating layer 12 without being exposed and sealed from the escape portion 27.
 さらに、本実施形態では、この封止用フィルム100を用いた被覆の際に、被覆層14が備える突出部15は、基板5の下面(他方の面)側に折り込むことが可能なように構成されている。そのため、基板5の下面の端部51を、この突出部15により被覆することができる。したがって、本実施形態の封止用フィルム100により、基板5の上面側ばかりでなく、基板5の下面における端部51まで被覆層14により被覆することができ、より優れた気密性をもって、電子部品搭載基板45を被覆することができる。そのため、封止用フィルム100により被覆することで得られる封止用フィルム被覆電子部品搭載基板50において、基板5上の電子部品4が湿気や埃等の外部因子と接触するのをより的確に抑制または防止することができる。 Further, in the present embodiment, the projecting portion 15 included in the coating layer 14 is configured to be able to be folded to the lower surface (the other surface) side of the substrate 5 at the time of coating using the sealing film 100. Has been. Therefore, the end portion 51 on the lower surface of the substrate 5 can be covered with the protruding portion 15. Therefore, the sealing film 100 according to the present embodiment can cover not only the upper surface side of the substrate 5 but also the end portion 51 on the lower surface of the substrate 5 with the coating layer 14, and the electronic component with better airtightness. The mounting substrate 45 can be covered. Therefore, in the sealing film-covered electronic component mounting substrate 50 obtained by covering with the sealing film 100, the electronic component 4 on the substrate 5 is more accurately suppressed from coming into contact with external factors such as moisture and dust. Or it can be prevented.
 また、前記第1実施形態と同様に、前記軟化点における伸び率は、150%以上3500%以下である。これにより、基板5の上面側から下面側へ突出部15を折りこませることで、端部51を被覆する際に、突出部15が屈曲した屈曲部において破断してしまうのを的確に抑制または防止することができる。 Further, as in the first embodiment, the elongation at the softening point is 150% or more and 3500% or less. Thereby, by folding the protruding portion 15 from the upper surface side to the lower surface side of the substrate 5, when covering the end portion 51, it is possible to appropriately suppress or prevent the protruding portion 15 from breaking at the bent portion. Can be prevented.
 さらに、前記第1実施形態と同様に、封止用フィルム100の25℃以上80℃以下の温度範囲での線膨張率は、100ppm/K以下であることが好ましい。このように、封止用フィルム100の線膨張率を規定することによっても、基板5の上面側から下面側への突出部15の折り込みを、突出部15を屈曲させる屈曲部において破断を生じさせることなく確実に実施させることができる。 Furthermore, as in the first embodiment, the linear expansion coefficient in the temperature range of 25 ° C. to 80 ° C. of the sealing film 100 is preferably 100 ppm / K or less. Thus, by defining the linear expansion coefficient of the sealing film 100, the folding of the protruding portion 15 from the upper surface side to the lower surface side of the substrate 5 is caused to break at the bent portion that bends the protruding portion 15. It can be surely implemented without any problems.
 また、封止用フィルム100における、電磁波シールド層13の端部を越えて突出する被覆層14の突出部15の長さは、特に限定されず、0.1cm以上5.0cm以下であることが好ましく、0.5cm以上2.5cm以下であることがより好ましい。突出部15の長さをかかる範囲内に設定することにより、突出部15を、基板5の上面側から下面側に折り込みつつ、基板5の下面における端部51にまで到達させることができるため、突出部15による端部51の被覆を確実に実現させることができる。 Moreover, the length of the protrusion part 15 of the coating layer 14 which protrudes beyond the edge part of the electromagnetic wave shield layer 13 in the film 100 for sealing is not specifically limited, It may be 0.1 cm or more and 5.0 cm or less. Preferably, it is 0.5 cm or more and 2.5 cm or less. By setting the length of the protruding portion 15 within such a range, the protruding portion 15 can reach the end portion 51 on the lower surface of the substrate 5 while being folded from the upper surface side of the substrate 5 to the lower surface side. It is possible to reliably realize the covering of the end portion 51 by the protruding portion 15.
 [電子部品搭載基板の封止方法]
 次に、上述した第13実施形態の封止用フィルムを用いた電子部品搭載基板の封止方法について説明する。
[Method of sealing electronic component mounting board]
Next, a method for sealing an electronic component mounting substrate using the sealing film of the thirteenth embodiment described above will be described.
 本実施形態の電子部品搭載基板の封止方法は、基板5と電子部品4とを覆い、かつ、接続部材7に逃げ部27が対応するように、絶縁層12を電子部品搭載基板45側にして封止用フィルム100を電子部品搭載基板45上に配置しつつ、突出部15を、基板5の下面(他方の面)側に折り込むことにより基板5の下面における端部51に接触させる配置工程と、封止用フィルム100を加熱し軟化させるとともに、減圧する加熱・減圧工程と、封止用フィルム100を冷却させるとともに、加圧することで、突出部15が基板5の下面における端部51に接触した状態で、基板5と電子部品4とを封止用フィルム100で封止する冷却・加圧工程とを有する。 In the sealing method of the electronic component mounting substrate of the present embodiment, the insulating layer 12 is placed on the electronic component mounting substrate 45 side so as to cover the substrate 5 and the electronic component 4 and the escape portion 27 corresponds to the connecting member 7. The disposing step of contacting the end portion 51 on the lower surface of the substrate 5 by folding the projecting portion 15 toward the lower surface (the other surface) of the substrate 5 while disposing the sealing film 100 on the electronic component mounting substrate 45. And heating and depressurization step for reducing the pressure while heating and softening the sealing film 100, and cooling and pressurizing the sealing film 100 so that the protruding portion 15 is formed on the end portion 51 on the lower surface of the substrate 5. A cooling / pressurizing step of sealing the substrate 5 and the electronic component 4 with the sealing film 100 in a contact state is provided.
 以下、電子部品搭載基板の封止方法の各工程について、順次説明する。
(配置工程)
 まず、図28(a)に示すように、封止用フィルム100が備える絶縁層12、電磁波シールド層13および被覆層14のうち絶縁層12を、電子部品搭載基板45に対向させた状態で、電子部品搭載基板45が備える基板5と電子部品4とを覆い、かつ、接続部材7に逃げ部27が対応するように、封止用フィルム100を電子部品搭載基板45上に配置する。
Hereafter, each process of the sealing method of an electronic component mounting substrate is demonstrated sequentially.
(Arrangement process)
First, as shown in FIG. 28A, the insulating layer 12 of the insulating film 12, the electromagnetic wave shielding layer 13, and the coating layer 14 included in the sealing film 100 is opposed to the electronic component mounting substrate 45. The sealing film 100 is disposed on the electronic component mounting substrate 45 so as to cover the substrate 5 and the electronic component 4 included in the electronic component mounting substrate 45 and so that the escape portion 27 corresponds to the connection member 7.
 そして、この際、電磁波シールド層13の端部を越えて突出する被覆層14の突出部15を、基板5の下面側に折り込み、これにより、突出部15を端部51に接触させる(図28(b))。 At this time, the projecting portion 15 of the covering layer 14 projecting beyond the end portion of the electromagnetic wave shielding layer 13 is folded to the lower surface side of the substrate 5, thereby bringing the projecting portion 15 into contact with the end portion 51 (FIG. 28). (B)).
(加熱・減圧工程)
 次に、図28(b)に示す状態を維持したまま、封止用フィルム100を加熱し軟化させるとともに、減圧する。
(Heating and decompression process)
Next, the sealing film 100 is heated and softened while maintaining the state shown in FIG.
 このように、封止用フィルム100を加熱することにより、封止用フィルム100、すなわち絶縁層12、電磁波シールド層13および被覆層14が軟化し、その結果、基板5の上面側では、基板5に電子部品4を搭載することにより形成された凹凸6の形状に対して、追従し得る状態となり、さらに、基板5の下面側では、端部51を、被覆し得る状態となる。 Thus, by heating the sealing film 100, the sealing film 100, that is, the insulating layer 12, the electromagnetic wave shielding layer 13, and the covering layer 14 are softened. As a result, on the upper surface side of the substrate 5, the substrate 5 In this state, it is possible to follow the shape of the irregularities 6 formed by mounting the electronic component 4 on the substrate 5, and the end 51 can be covered on the lower surface side of the substrate 5.
 また、この際、電子部品搭載基板45および封止用フィルム100を、減圧雰囲気下に配置することで、封止用フィルム100の外側ばかりでなく、電子部品搭載基板45と封止用フィルム100との間の気体(空気)が脱気される。 At this time, the electronic component mounting substrate 45 and the sealing film 100 are arranged in a reduced-pressure atmosphere, so that not only the outside of the sealing film 100 but also the electronic component mounting substrate 45 and the sealing film 100 The gas (air) in between is degassed.
 これにより、封止用フィルム100が伸展しながら、基板5の上面側では、凹凸6の形状、すなわち、基板5上の電子部品4の形状に若干追従した状態となり、基板5の下面側では、端部51を若干被覆した状態となる。 Thereby, while the sealing film 100 extends, the shape of the unevenness 6 on the upper surface side of the substrate 5, that is, the shape of the electronic component 4 on the substrate 5 is slightly followed, and on the lower surface side of the substrate 5, The end 51 is slightly covered.
 本工程により、封止用フィルム100を、電子部品搭載基板45の上面側に形成された凹凸6の形状に追従し得る状態とし、さらに、突出部15が基板5の下面側に折り込まれて、端部51を被覆し得る状態とすることができる。 By this step, the sealing film 100 can be made to follow the shape of the unevenness 6 formed on the upper surface side of the electronic component mounting substrate 45, and the protrusion 15 is folded to the lower surface side of the substrate 5, The end portion 51 can be covered.
(冷却・加圧工程)
 次に、図6(c)に示すように、封止用フィルム100を冷却させるとともに、加圧する。
(Cooling / pressurization process)
Next, as shown in FIG. 6C, the sealing film 100 is cooled and pressurized.
 このように、減圧された雰囲気から加圧することで、前記加熱・減圧工程において、電子部品搭載基板45と封止用フィルム100との間が脱気され、減圧状態が維持されていることから、封止用フィルム100がさらに伸展することとなる。 Thus, by pressurizing from the decompressed atmosphere, in the heating and decompression step, the space between the electronic component mounting substrate 45 and the sealing film 100 is degassed, and the decompressed state is maintained. The sealing film 100 is further extended.
 その結果、基板5の上側では、接続部材7が逃げ部27から露出して封止されることなく、凹凸6の形状(電子部品4の形状)に対して優れた密着度(気密度)で追従し、さらに、端部51に対して優れた密着度で被覆した状態で、軟化した状態の封止用フィルム100により、基板5と電子部品4とが被覆される。 As a result, on the upper side of the substrate 5, the connection member 7 is not exposed and sealed from the escape portion 27, and has excellent adhesion (air density) with respect to the shape of the unevenness 6 (the shape of the electronic component 4). Further, the substrate 5 and the electronic component 4 are covered with the softened sealing film 100 in a state where it is covered with an excellent degree of adhesion to the end portion 51.
 この際、封止用フィルム100の軟化点における伸び率が150%以上3500%以下となっている。これにより、封止用フィルム100は、この加圧時に、電子部品搭載基板45に形成された凹凸6に対してより優れた形状追従性をもって伸展させることができるため、軟化した状態の封止用フィルム100により、基板5の上側において基板5と電子部品4とを、さらには端部51を優れた密着性をもって被覆することができる。また、基板5の上面側から下面側へ突出部15を折り込ませることで端部51に接触させる際に、突出部15が屈曲した屈曲部において破断してしまうのを的確に抑制または防止することができる。 At this time, the elongation at the softening point of the sealing film 100 is 150% or more and 3500% or less. Thereby, since the film 100 for sealing can be extended with the more excellent shape followable | trackability with respect to the unevenness | corrugation 6 formed in the electronic component mounting board | substrate 45 at the time of this pressurization, for the sealing of the softened state The film 100 can cover the substrate 5 and the electronic component 4 on the upper side of the substrate 5 and the end portion 51 with excellent adhesion. In addition, when the protruding portion 15 is folded from the upper surface side to the lower surface side of the substrate 5 to be brought into contact with the end portion 51, it is possible to accurately suppress or prevent the protruding portion 15 from being broken at the bent portion. Can do.
 そして、封止用フィルム100により、基板5と電子部品4とを、さらには端部51を優れた密着性(気密性)をもって被覆し、かつ、接続部材7が逃げ部27から露出した状態で、封止用フィルム100を冷却することで、この状態を維持したまま、封止用フィルム100が固化する。 Then, the sealing film 100 covers the substrate 5 and the electronic component 4, and further covers the end portion 51 with excellent adhesion (airtightness), and the connection member 7 is exposed from the escape portion 27. By cooling the sealing film 100, the sealing film 100 is solidified while maintaining this state.
 これにより、電子部品搭載基板45に形成された凹凸6の形状に追従した状態で、封止用フィルム100により、基板5の上側において、絶縁層12が接触して基板5と電子部品4とが被覆され、かつ、接続部材7が逃げ部27から露出し、さらに、基板5の下面側において、折り込まれた被覆層14の突出部15により端部51が被覆された封止用フィルム被覆電子部品搭載基板50が得られることとなる。そのため、この封止用フィルム被覆電子部品搭載基板50において、湿気や埃等の外部因子と電子部品4が接触するのをより的確に抑制または防止することができる。したがって、得られる封止用フィルム被覆電子部品搭載基板50ひいてはこの封止用フィルム被覆電子部品搭載基板50を備える電子機器のより信頼性の向上が図られる。 Thereby, the insulating layer 12 is brought into contact with the upper side of the substrate 5 by the sealing film 100 in a state following the shape of the unevenness 6 formed on the electronic component mounting substrate 45, so that the substrate 5 and the electronic component 4 are Film-sealing electronic component for sealing, in which the connecting member 7 is exposed from the escape portion 27 and the end portion 51 is covered with the protruding portion 15 of the folded covering layer 14 on the lower surface side of the substrate 5 The mounting substrate 50 is obtained. Therefore, in the sealing film-covered electronic component mounting substrate 50, it is possible to more accurately suppress or prevent the electronic component 4 from coming into contact with external factors such as moisture and dust. Therefore, the reliability of the obtained electronic device including the sealing film-covered electronic component mounting substrate 50 and thus the sealing film-covered electronic component mounting substrate 50 can be improved.
 また、上記のように、得られた封止用フィルム被覆電子部品搭載基板50において、接続部材7が逃げ部27から露出しているため、電子部品搭載基板45と他の電子部品や電源との電気的な接続を実現することができる。 Further, as described above, in the obtained sealing film-covered electronic component mounting board 50, since the connecting member 7 is exposed from the escape portion 27, the electronic component mounting board 45 and other electronic components or power supply are not connected. An electrical connection can be realized.
 上記の工程を経ることで、封止用フィルム100により、基板5と電子部品4とが被覆され、かつ、接続部材7が逃げ部27から露出した封止用フィルム被覆電子部品搭載基板50を得ることができる。 By passing through the above steps, the sealing film-covered electronic component mounting substrate 50 in which the substrate 5 and the electronic component 4 are covered with the sealing film 100 and the connection member 7 is exposed from the escape portion 27 is obtained. be able to.
 <第14実施形態>
 次に、本発明の封止用フィルム100の第14実施形態について説明する。
<Fourteenth embodiment>
Next, a fourteenth embodiment of the sealing film 100 of the present invention will be described.
 図29は、本発明の封止用フィルムの第4実施形態を示す図((a)縦断面図、(b)平面図)、図30(a)~(c)は、図29に示す封止用フィルムを用いて電子部品搭載基板の封止方法を説明するための縦断面図である。なお、以下の説明では、説明の便宜上、図29、図30中の上側を「上」、下側を「下」と言う。 FIG. 29 is a view showing a fourth embodiment of the sealing film of the present invention ((a) longitudinal sectional view, (b) plan view), and FIGS. 30 (a) to 30 (c) are the seals shown in FIG. It is a longitudinal cross-sectional view for demonstrating the sealing method of an electronic component mounting board | substrate using a film for a stop. In the following description, for convenience of description, the upper side in FIGS. 29 and 30 is referred to as “upper” and the lower side is referred to as “lower”.
 以下、第14実施形態について説明するが、前記第12実施形態と異なる点を中心に説明し、同様の事項についてはその説明を省略する。 Hereinafter, the fourteenth embodiment will be described, but the description will focus on the differences from the twelfth embodiment, and description of similar matters will be omitted.
 第14実施形態では、封止用フィルム100が備える絶縁層12および被覆層14の構成が異なり、それ以外は、前記第12実施形態と同様である。 In the fourteenth embodiment, the configurations of the insulating layer 12 and the covering layer 14 included in the sealing film 100 are different, and the other configurations are the same as those in the twelfth embodiment.
 第14実施形態の封止用フィルム100において、絶縁層12および被覆層14は、図29、図30に示すように、それぞれ、電磁波シールド層13よりも大きく形成され、それらの端部が電磁波シールド層13の端部(縁部)から露出すること、換言すれば、電磁波シールド層13の端部を越えて突出することで形成された突出部15(第1突出部)および突出部16(第3突出部)を備えている。そして、これら突出部15と突出部16とは、電磁波シールド層13の端部を越えた位置で積層することで設けられた積層突出部65を形成する。 In the sealing film 100 of the fourteenth embodiment, as shown in FIGS. 29 and 30, the insulating layer 12 and the covering layer 14 are each formed larger than the electromagnetic wave shielding layer 13, and their end portions are electromagnetic wave shields. The protrusion 15 (first protrusion) and the protrusion 16 (first protrusion) formed by being exposed from the end (edge) of the layer 13, in other words, protruding beyond the end of the electromagnetic wave shielding layer 13. 3 protrusions). And these protrusion part 15 and protrusion part 16 form the lamination | stacking protrusion part 65 provided by laminating | stacking in the position beyond the edge part of the electromagnetic wave shield layer 13. FIG.
 このような封止用フィルム100を用いて、電子部品4および接続部材7が上面(一方の面)側に搭載された電子部品搭載基板45に対して、絶縁層12を下側とし被覆層14を上側にして被覆すると、接続部材7が逃げ部27から露出して封止されることなく、電子部品4は、絶縁層12を介して電磁波シールド層13で封止される。 Using such a sealing film 100, the coating layer 14 has the insulating layer 12 on the lower side with respect to the electronic component mounting substrate 45 on which the electronic component 4 and the connection member 7 are mounted on the upper surface (one surface) side. The electronic component 4 is sealed with the electromagnetic wave shielding layer 13 through the insulating layer 12 without being exposed and sealed from the escape portion 27.
 さらに、本実施形態では、この封止用フィルム100を用いた被覆の際に、突出部15と突出部16とを積層することで形成された積層突出部65は、基板5の下面(他方の面)側に折り込むことが可能なように構成されている。そのため、基板5の下面の端部51を、この積層突出部65が備える突出部15により被覆することができる。したがって、本実施形態の封止用フィルム100により、基板5の上面側ばかりでなく、基板5の下面における端部51まで積層突出部65により被覆することができ、より優れた気密性をもって、電子部品搭載基板45を被覆することができる。そのため、封止用フィルム100により被覆することで得られる封止用フィルム被覆電子部品搭載基板50において、基板5上の電子部品4が湿気や埃等の外部因子と接触するのをより的確に抑制または防止することができる。 Furthermore, in the present embodiment, the laminated projection 65 formed by laminating the projection 15 and the projection 16 at the time of coating using the sealing film 100 is the bottom surface of the substrate 5 (the other side). It is configured so that it can be folded to the surface) side. Therefore, the end portion 51 on the lower surface of the substrate 5 can be covered with the protruding portion 15 included in the stacked protruding portion 65. Therefore, the sealing film 100 of the present embodiment can cover not only the upper surface side of the substrate 5 but also the end portion 51 on the lower surface of the substrate 5 with the laminated projecting portion 65, and has an excellent airtightness. The component mounting board 45 can be covered. Therefore, in the sealing film-covered electronic component mounting substrate 50 obtained by covering with the sealing film 100, the electronic component 4 on the substrate 5 is more accurately suppressed from coming into contact with external factors such as moisture and dust. Or it can be prevented.
 また、積層突出部65は、これら突出部15と突出部16とが、電磁波シールド層13の端部を越えた位置で積層することで形成され、電磁波シールド層13の端部をも絶縁層12および被覆層14により被覆されることで、電子部品4および電子部品搭載基板45の外側に位置する電子部品に対する電磁波シールド層13の絶縁性をより確実に確保することができる。 The laminated protrusion 65 is formed by laminating the protrusion 15 and the protrusion 16 at a position beyond the end of the electromagnetic wave shielding layer 13, and the end of the electromagnetic wave shielding layer 13 is also formed on the insulating layer 12. By covering with the covering layer 14, the insulating property of the electromagnetic wave shielding layer 13 with respect to the electronic component 4 and the electronic component located outside the electronic component mounting board 45 can be more reliably ensured.
 さらに、前記第1実施形態と同様に、封止用フィルム100の前記軟化点における伸び率は、150%以上3500%以下である。これにより、基板5の上面側から下面側へ積層突出部65を折りこませることで、端部51を被覆する際に、積層突出部65が屈曲した屈曲部において破断してしまうのを的確に抑制または防止することができる。 Furthermore, as in the first embodiment, the elongation at the softening point of the sealing film 100 is 150% or more and 3500% or less. Thus, by folding the laminated protrusion 65 from the upper surface side to the lower surface side of the substrate 5, it is possible to accurately break the laminated protrusion 65 at the bent portion when covering the end portion 51. It can be suppressed or prevented.
 また、前記第1実施形態と同様に、封止用フィルム100の25℃以上80℃以下の温度範囲での線膨張率は、100ppm/K以下であることが好ましい。このように、封止用フィルム100の線膨張率を規定することによっても、基板5の上面側から下面側への突出部15の折り込みを、突出部15を屈曲させる屈曲部において破断を生じさせることなく確実に実施させることができる。 Further, similarly to the first embodiment, the linear expansion coefficient in the temperature range of 25 ° C. to 80 ° C. of the sealing film 100 is preferably 100 ppm / K or less. Thus, by defining the linear expansion coefficient of the sealing film 100, the folding of the protruding portion 15 from the upper surface side to the lower surface side of the substrate 5 is caused to break at the bent portion that bends the protruding portion 15. It can be surely implemented without any problems.
 さらに、封止用フィルム100における、電磁波シールド層13の端部を越えて突出する被覆層14の突出部15の長さは、特に限定されず、0.1cm以上5.0cm以下であることが好ましく、0.5cm以上2.5cm以下であることがより好ましい。突出部15の長さをかかる範囲内に設定することにより、突出部15を、基板5の上面側から下面側に折り込みつつ、基板5の下面における端部51にまで到達させることができるため、突出部15による端部51の被覆を確実に実現させることができる。 Further, the length of the protruding portion 15 of the covering layer 14 protruding beyond the end portion of the electromagnetic wave shielding layer 13 in the sealing film 100 is not particularly limited, and may be 0.1 cm or more and 5.0 cm or less. Preferably, it is 0.5 cm or more and 2.5 cm or less. By setting the length of the protruding portion 15 within such a range, the protruding portion 15 can reach the end portion 51 on the lower surface of the substrate 5 while being folded from the upper surface side of the substrate 5 to the lower surface side. It is possible to reliably realize the covering of the end portion 51 by the protruding portion 15.
 [電子部品搭載基板の封止方法]
 次に、上述した第14実施形態の封止用フィルムを用いた電子部品搭載基板の封止方法について説明する。
[Method of sealing electronic component mounting board]
Next, a method for sealing an electronic component mounting substrate using the sealing film of the fourteenth embodiment described above will be described.
 本実施形態の電子部品搭載基板の封止方法は、基板5と電子部品4とを覆い、かつ、接続部材7に逃げ部27が対応するように、絶縁層12を電子部品搭載基板45側にして封止用フィルム100を電子部品搭載基板45上に配置しつつ、積層突出部65を、基板5の下面(他方の面)側に折り込むことにより基板5の下面における端部51に接触させる配置工程と、封止用フィルム100を加熱し軟化させるとともに、減圧する加熱・減圧工程と、封止用フィルム100を冷却させるとともに、加圧することで、積層突出部65が基板5の下面における端部51に接触した状態で、基板5と電子部品4とを封止用フィルム100で封止する冷却・加圧工程とを有する。 In the sealing method of the electronic component mounting substrate of the present embodiment, the insulating layer 12 is placed on the electronic component mounting substrate 45 side so as to cover the substrate 5 and the electronic component 4 and the escape portion 27 corresponds to the connecting member 7. The sealing film 100 is disposed on the electronic component mounting substrate 45, and the stacked projecting portion 65 is brought into contact with the end portion 51 on the lower surface of the substrate 5 by folding the laminated projecting portion 65 toward the lower surface (the other surface) of the substrate 5. Steps, heating / depressurizing step of heating and softening the sealing film 100, and cooling and pressurizing the sealing film 100 so that the laminated protrusion 65 is an end portion on the lower surface of the substrate 5 A cooling / pressurizing step of sealing the substrate 5 and the electronic component 4 with the sealing film 100 while being in contact with 51.
 以下、電子部品搭載基板の封止方法の各工程について、順次説明する。
(配置工程)
 まず、図30(a)に示すように、封止用フィルム100が備える絶縁層12、電磁波シールド層13および被覆層14のうち絶縁層12を、電子部品搭載基板45に対向させた状態で、電子部品搭載基板45が備える基板5と電子部品4とを覆い、かつ、接続部材7に逃げ部27が対応するように、封止用フィルム100を電子部品搭載基板45上に配置する。
Hereafter, each process of the sealing method of an electronic component mounting substrate is demonstrated sequentially.
(Arrangement process)
First, as shown in FIG. 30A, the insulating layer 12 of the insulating film 12, the electromagnetic wave shielding layer 13, and the coating layer 14 included in the sealing film 100 is opposed to the electronic component mounting substrate 45. The sealing film 100 is disposed on the electronic component mounting substrate 45 so as to cover the substrate 5 and the electronic component 4 included in the electronic component mounting substrate 45 and so that the escape portion 27 corresponds to the connection member 7.
 そして、この際、電磁波シールド層13の端部を越えて突出する積層突出部65を、基板5の下面側に折り込み、これにより、積層突出部65を端部51に接触させる(図30(b))。 At this time, the laminated protrusion 65 protruding beyond the end of the electromagnetic wave shielding layer 13 is folded to the lower surface side of the substrate 5, thereby bringing the laminated protrusion 65 into contact with the end 51 (FIG. 30B). )).
(加熱・減圧工程)
 次に、図30(b)に示す状態を維持したまま、封止用フィルム100を加熱し軟化させるとともに、減圧する。
(Heating and decompression process)
Next, the sealing film 100 is heated and softened while maintaining the state shown in FIG.
 このように、封止用フィルム100を加熱することにより、封止用フィルム100すなわち絶縁層12、電磁波シールド層13および被覆層14が軟化し、その結果、基板5の上面側では、基板5に電子部品4を搭載することにより形成された凹凸6の形状に対して、追従し得る状態となり、さらに、基板5の下面側では、端部51を、被覆し得る状態となる。 Thus, by heating the sealing film 100, the sealing film 100, that is, the insulating layer 12, the electromagnetic wave shielding layer 13, and the coating layer 14 are softened. As a result, on the upper surface side of the substrate 5, It will be in the state which can follow the shape of the unevenness | corrugation 6 formed by mounting the electronic component 4, and also will be in the state which can coat | cover the edge part 51 in the lower surface side of the board | substrate 5. FIG.
 また、この際、電子部品搭載基板45および封止用フィルム100を、減圧雰囲気下に配置することで、封止用フィルム100の外側ばかりでなく、電子部品搭載基板45と封止用フィルム100との間の気体(空気)が脱気される。 At this time, the electronic component mounting substrate 45 and the sealing film 100 are arranged in a reduced-pressure atmosphere, so that not only the outside of the sealing film 100 but also the electronic component mounting substrate 45 and the sealing film 100 The gas (air) in between is degassed.
 これにより、封止用フィルム100が伸展しながら、基板5の上面側では、凹凸6の形状、すなわち、基板5上の電子部品4の形状に若干追従した状態となり、基板5の下面側では、端部51を若干被覆した状態となる。 Thereby, while the sealing film 100 extends, the shape of the unevenness 6 on the upper surface side of the substrate 5, that is, the shape of the electronic component 4 on the substrate 5 is slightly followed, and on the lower surface side of the substrate 5, The end 51 is slightly covered.
 本工程により、封止用フィルム100を、電子部品搭載基板45の上面側に形成された凹凸6の形状に追従し得る状態とし、さらに、突出部15が基板5の下面側に折り込まれて、端部51を被覆し得る状態とすることができる。 By this step, the sealing film 100 can be made to follow the shape of the unevenness 6 formed on the upper surface side of the electronic component mounting substrate 45, and the protrusion 15 is folded to the lower surface side of the substrate 5, The end portion 51 can be covered.
(冷却・加圧工程)
 次に、図30(c)に示すように、封止用フィルム100を冷却させるとともに、加圧する。
(Cooling / pressurization process)
Next, as shown in FIG. 30C, the sealing film 100 is cooled and pressurized.
 このように、減圧された雰囲気から加圧することで、前記加熱・減圧工程において、電子部品搭載基板45と封止用フィルム100との間が脱気され、減圧状態が維持されていることから、封止用フィルム100がさらに伸展することとなる。 Thus, by pressurizing from the decompressed atmosphere, in the heating and decompression step, the space between the electronic component mounting substrate 45 and the sealing film 100 is degassed, and the decompressed state is maintained. The sealing film 100 is further extended.
 その結果、基板5の上側では、接続部材7が逃げ部27から露出して封止されることなく、凹凸6の形状(電子部品4の形状)に対して優れた密着度(気密度)で追従し、さらに、端部51に対して優れた密着度で被覆した状態で、軟化した状態の封止用フィルム100により、基板5と電子部品4とが被覆される。 As a result, on the upper side of the substrate 5, the connection member 7 is not exposed and sealed from the escape portion 27, and has excellent adhesion (air density) with respect to the shape of the unevenness 6 (the shape of the electronic component 4). Further, the substrate 5 and the electronic component 4 are covered with the softened sealing film 100 in a state where it is covered with an excellent degree of adhesion to the end portion 51.
 この際、封止用フィルム100の軟化点における伸び率が150%以上3500%以下となっている。これにより、封止用フィルム100は、この加圧時に、電子部品搭載基板45に形成された凹凸6に対してより優れた形状追従性をもって伸展させることができるため、軟化した状態の封止用フィルム100により、基板5の上側において基板5と電子部品4とを、さらには端部51を優れた密着性をもって被覆することができる。また、基板5の上面側から下面側へ積層突出部65を折りこませることで端部51に接触させる際に、積層突出部65が屈曲した屈曲部において破断してしまうのを的確に抑制または防止することができる。 At this time, the elongation at the softening point of the sealing film 100 is 150% or more and 3500% or less. Thereby, since the film 100 for sealing can be extended with the more excellent shape followable | trackability with respect to the unevenness | corrugation 6 formed in the electronic component mounting board | substrate 45 at the time of this pressurization, for the sealing of the softened state The film 100 can cover the substrate 5 and the electronic component 4 on the upper side of the substrate 5 and the end portion 51 with excellent adhesion. In addition, when the laminated protrusion 65 is folded from the upper surface side to the lower surface side of the substrate 5 to be brought into contact with the end portion 51, it is possible to accurately suppress or prevent the laminated protrusion 65 from being broken at the bent portion. Can be prevented.
 そして、封止用フィルム100により、基板5と電子部品4とを、さらには端部51を優れた密着性(気密性)をもって被覆し、かつ、接続部材7が逃げ部27から露出した状態で、封止用フィルム100を冷却することで、この状態を維持したまま、封止用フィルム100が固化する。 Then, the sealing film 100 covers the substrate 5 and the electronic component 4, and further covers the end portion 51 with excellent adhesion (airtightness), and the connection member 7 is exposed from the escape portion 27. By cooling the sealing film 100, the sealing film 100 is solidified while maintaining this state.
 これにより、電子部品搭載基板45に形成された凹凸6の形状に追従した状態で、封止用フィルム100により、基板5の上面側において、絶縁層12が接触して基板5と電子部品4とが被覆され、かつ、接続部材7が逃げ部27から露出し、さらに、基板5の下面側において、折り込まれた積層突出部65により端部51が被覆された封止用フィルム被覆電子部品搭載基板50が得られることとなる。そのため、この封止用フィルム被覆電子部品搭載基板50において、湿気や埃等の外部因子と電子部品4および電極3が接触するのをより的確に抑制または防止することができる。したがって、得られる封止用フィルム被覆電子部品搭載基板50ひいてはこの封止用フィルム被覆電子部品搭載基板50を備える電子機器のより信頼性の向上が図られる。 As a result, the insulating layer 12 is brought into contact with the sealing film 100 on the upper surface side of the substrate 5 in a state following the shape of the unevenness 6 formed on the electronic component mounting substrate 45, and the substrate 5 and the electronic component 4. And the connecting member 7 is exposed from the escape portion 27, and further, the sealing film-covered electronic component mounting substrate in which the end portion 51 is covered by the folded projecting portion 65 on the lower surface side of the substrate 5. 50 will be obtained. Therefore, in the sealing film-covered electronic component mounting substrate 50, it is possible to more accurately suppress or prevent the external component such as moisture and dust from contacting the electronic component 4 and the electrode 3. Therefore, the reliability of the obtained electronic device including the sealing film-covered electronic component mounting substrate 50 and thus the sealing film-covered electronic component mounting substrate 50 can be improved.
 また、上記のように、得られた封止用フィルム被覆電子部品搭載基板50において、接続部材7が逃げ部27から露出しているため、電子部品搭載基板45と他の電子部品や電源との電気的な接続を実現することができる。 Further, as described above, in the obtained sealing film-covered electronic component mounting board 50, since the connecting member 7 is exposed from the escape portion 27, the electronic component mounting board 45 and other electronic components or power supply are not connected. An electrical connection can be realized.
 上記の工程を経ることで、封止用フィルム100により、基板5と電子部品4とが被覆され、かつ、接続部材7が逃げ部27から露出した封止用フィルム被覆電子部品搭載基板50を得ることができる。 By passing through the above steps, the sealing film-covered electronic component mounting substrate 50 in which the substrate 5 and the electronic component 4 are covered with the sealing film 100 and the connection member 7 is exposed from the escape portion 27 is obtained. be able to.
 <第15実施形態>
 [封止用フィルム]
 次に、本発明の封止用フィルム100の第15実施形態について説明する。
<Fifteenth embodiment>
[Sealing film]
Next, a fifteenth embodiment of the sealing film 100 of the present invention will be described.
 図31は、本発明の封止用フィルムの第15実施形態を示す図((a)縦断面図、(b)平面図)、図32(a)~(c)は、図31に示す封止用フィルムを用いて電子部品搭載基板の封止方法を説明するための縦断面図である。なお、以下の説明では、説明の便宜上、図31、図32中の上側を「上」、下側を「下」と言う。 FIG. 31 shows a fifteenth embodiment of a sealing film of the present invention ((a) longitudinal sectional view, (b) plan view), and FIGS. 32 (a) to (c) show the sealing shown in FIG. It is a longitudinal cross-sectional view for demonstrating the sealing method of an electronic component mounting board | substrate using a film for a stop. In the following description, for convenience of description, the upper side in FIGS. 31 and 32 is referred to as “upper” and the lower side is referred to as “lower”.
 以下、第15実施形態について説明するが、前記第12実施形態と異なる点を中心に説明し、同様の事項についてはその説明を省略する。 Hereinafter, the fifteenth embodiment will be described, but the description will focus on the differences from the twelfth embodiment, and description of similar matters will be omitted.
 第15実施形態では、封止用フィルム100において、被覆層14の形成が省略され、それ以外は、前記第12実施形態と同様である。 In the fifteenth embodiment, in the sealing film 100, the formation of the coating layer 14 is omitted, and the rest is the same as in the twelfth embodiment.
 第15実施形態の封止用フィルム100において、図31、図32に示すように、被覆層14の形成が省略され、絶縁層12と、この絶縁層12の一方の面側(上面側)に積層された電磁波シールド層13とを備える積層体で構成されている。すなわち、絶縁層12と、電磁波シールド層13とは、被覆すべき電子部品搭載基板45側から、この順で、積層されている。 In the sealing film 100 of the fifteenth embodiment, as shown in FIGS. 31 and 32, the formation of the covering layer 14 is omitted, and the insulating layer 12 and one surface side (upper surface side) of the insulating layer 12 are omitted. It is comprised with the laminated body provided with the electromagnetic wave shielding layer 13 laminated | stacked. That is, the insulating layer 12 and the electromagnetic wave shielding layer 13 are laminated in this order from the electronic component mounting substrate 45 side to be coated.
 このような封止用フィルム100を用いて、電子部品4および接続部材7が上面(一方の面)側に搭載された電子部品搭載基板45に対して、絶縁層12を下側とし電磁波シールド層13を上側にして被覆すると、接続部材7が逃げ部27から露出して封止されることなく、電子部品4は、絶縁層12を介して電磁波シールド層13で封止される。 Using such a sealing film 100, an electromagnetic wave shielding layer with the insulating layer 12 on the lower side with respect to the electronic component mounting substrate 45 on which the electronic component 4 and the connection member 7 are mounted on the upper surface (one surface) side. When the cover 13 is placed on the upper side, the connecting member 7 is not exposed and sealed from the escape portion 27, and the electronic component 4 is sealed with the electromagnetic wave shielding layer 13 through the insulating layer 12.
 また、前記第1実施形態と同様に、前記軟化点における伸び率は、150%以上3500%以下である。これにより、電子部品搭載基板45が備える、凸部61と凹部62とからなる凹凸6に対して、優れた追従性をもって封止した状態で、電子部品4を被覆することができる。 Further, as in the first embodiment, the elongation at the softening point is 150% or more and 3500% or less. Thereby, the electronic component 4 can be covered in a state where the unevenness 6 including the convex portions 61 and the concave portions 62 included in the electronic component mounting substrate 45 is sealed with excellent followability.
 さらに、前記第1実施形態と同様に、封止用フィルム100の25℃以上80℃以下の温度範囲での線膨張率は、100ppm/K以下であることが好ましい。このように、封止用フィルム100の線膨張率を規定することによっても、電子部品搭載基板45が備える、凸部61と凹部62とからなる凹凸6に対して、優れた追従性をもって封止した状態で、電子部品4を被覆することができる。 Furthermore, as in the first embodiment, the linear expansion coefficient in the temperature range of 25 ° C. to 80 ° C. of the sealing film 100 is preferably 100 ppm / K or less. In this way, by regulating the linear expansion coefficient of the sealing film 100, the electronic component mounting board 45 can be sealed with excellent followability with respect to the concave and convex portions 6 including the convex portions 61 and the concave portions 62. In this state, the electronic component 4 can be covered.
 [電子部品搭載基板の封止方法]
 次に、上述した第15実施形態の封止用フィルムを用いた電子部品搭載基板の封止方法(本発明の電子部品搭載基板の封止方法)について説明する。
[Method of sealing electronic component mounting board]
Next, an electronic component mounting substrate sealing method using the sealing film of the fifteenth embodiment described above (an electronic component mounting substrate sealing method of the present invention) will be described.
 本実施形態の電子部品搭載基板の封止方法は、基板5と電子部品4とを覆い、かつ、接続部材7に逃げ部27が対応するように、絶縁層12を電子部品搭載基板45側にして封止用フィルム100を電子部品搭載基板45上に配置する配置工程と、封止用フィルム100を加熱し軟化させるとともに、減圧する加熱・減圧工程と、封止用フィルム100を冷却させるとともに、加圧することで、基板5と電子部品4とを封止用フィルム100で封止する冷却・加圧工程とを有する。 In the sealing method of the electronic component mounting substrate of the present embodiment, the insulating layer 12 is placed on the electronic component mounting substrate 45 side so as to cover the substrate 5 and the electronic component 4 and the escape portion 27 corresponds to the connecting member 7. While placing the sealing film 100 on the electronic component mounting substrate 45, heating and softening the sealing film 100, heating and decompressing the pressure, and cooling the sealing film 100, It has the cooling and pressurization process which seals the board | substrate 5 and the electronic component 4 with the film 100 for sealing by pressurizing.
 以下、電子部品搭載基板の封止方法の各工程について、順次説明する。
(配置工程)
 まず、図34(a)に示すように、封止用フィルム100が備える絶縁層12および電磁波シールド層13のうち絶縁層12を、電子部品搭載基板45に対向させた状態で、電子部品搭載基板45が備える基板5と電子部品4とを覆い、かつ、接続部材7に逃げ部27が対応するように、封止用フィルム100を電子部品搭載基板45上に配置する(図34(b))。
Hereafter, each process of the sealing method of an electronic component mounting substrate is demonstrated sequentially.
(Arrangement process)
First, as shown in FIG. 34 (a), the electronic component mounting substrate in the state where the insulating layer 12 of the insulating film 12 and the electromagnetic wave shielding layer 13 included in the sealing film 100 is opposed to the electronic component mounting substrate 45. The sealing film 100 is arranged on the electronic component mounting substrate 45 so as to cover the substrate 5 and the electronic component 4 included in the 45 and so that the escape portion 27 corresponds to the connection member 7 (FIG. 34B). .
(加熱・減圧工程)
 次に、図34(b)に示す状態を維持したまま、封止用フィルム100を加熱し軟化させるとともに、減圧する。
(Heating and decompression process)
Next, the sealing film 100 is heated and softened while maintaining the state shown in FIG.
 このように、封止用フィルム100を加熱することにより、封止用フィルム100すなわち絶縁層12および電磁波シールド層13が軟化し、その結果、基板5の上面側では、基板5に電子部品4を搭載することにより形成された凹凸6の形状に対して、追従し得る状態となる。 Thus, by heating the sealing film 100, the sealing film 100, that is, the insulating layer 12 and the electromagnetic wave shielding layer 13 are softened. As a result, the electronic component 4 is attached to the substrate 5 on the upper surface side of the substrate 5. It will be in the state which can follow the shape of the unevenness | corrugation 6 formed by mounting.
 また、この際、電子部品搭載基板45および封止用フィルム100を、減圧雰囲気下に配置することで、封止用フィルム100の外側ばかりでなく、電子部品搭載基板45と封止用フィルム100との間の気体(空気)が脱気される。 At this time, the electronic component mounting substrate 45 and the sealing film 100 are arranged in a reduced-pressure atmosphere, so that not only the outside of the sealing film 100 but also the electronic component mounting substrate 45 and the sealing film 100 The gas (air) in between is degassed.
 これにより、封止用フィルム100が伸展しながら、基板5の上側では、凹凸6の形状、すなわち、基板5上の電子部品4の形状に若干追従した状態となる。 Thus, while the sealing film 100 is extended, the shape of the unevenness 6, that is, the shape of the electronic component 4 on the substrate 5 is slightly followed on the upper side of the substrate 5.
 本工程により、電子部品搭載基板45の上面側に形成された凹凸6の形状に対して、封止用フィルム100を、追従し得る状態とすることができる。 By this step, the sealing film 100 can be made to follow the shape of the irregularities 6 formed on the upper surface side of the electronic component mounting substrate 45.
 なお、封止用フィルム100の加熱と、雰囲気の減圧とは、加熱の後に減圧してもよく、減圧の後に加熱してもよいが、加熱と減圧とをほぼ同時に行うことが好ましい。これにより、軟化した封止用フィルム100を、凹凸6の形状に確実に若干追従した状態とすることができる。 The heating of the sealing film 100 and the reduced pressure of the atmosphere may be reduced after the heating or may be heated after the reduced pressure, but it is preferable to perform the heating and the reduced pressure almost simultaneously. Thereby, the softened film 100 for sealing can be made into the state which followed the shape of the unevenness | corrugation 6 a little reliably.
(冷却・加圧工程)
 次に、図34(c)に示すように、封止用フィルム100を冷却させるとともに、加圧する。
(Cooling / pressurization process)
Next, as shown in FIG. 34C, the sealing film 100 is cooled and pressurized.
 このように、減圧された雰囲気から加圧することで、前記加熱・減圧工程において、電子部品搭載基板45と封止用フィルム100との間が脱気され、減圧状態が維持されていることから、封止用フィルム100がさらに伸展することとなる。 Thus, by pressurizing from the decompressed atmosphere, in the heating and decompression step, the space between the electronic component mounting substrate 45 and the sealing film 100 is degassed, and the decompressed state is maintained. The sealing film 100 is further extended.
 その結果、基板5の上側では、接続部材7が逃げ部27から露出して封止されることなく、凹凸6の形状(電子部品4の形状)に優れた密着度(気密度)で追従した状態で、軟化した状態の封止用フィルム100により、基板5と電子部品4とが被覆される。
 なお、前記加熱減圧工程において、凹凸6の形状に対応して封止用フィルム100が十分追従していれば、加圧工程を省略することができる。
As a result, on the upper side of the substrate 5, the connection member 7 is not exposed and sealed from the escape portion 27, and follows the shape of the unevenness 6 (the shape of the electronic component 4) with excellent adhesion (air density). In this state, the substrate 5 and the electronic component 4 are covered with the sealing film 100 in a softened state.
In the heating and depressurizing step, the pressing step can be omitted if the sealing film 100 sufficiently follows the shape of the irregularities 6.
 この際、封止用フィルム100の軟化点における伸び率が150%以上3500%以下となっているのが好ましい。これにより、封止用フィルム100は、この加圧時に、電子部品搭載基板45に形成された凹凸6に対してより優れた形状追従性をもって伸展させることができるため、軟化した状態の封止用フィルム100により、基板5の上側において基板5と電子部品4とを優れた密着性をもって被覆することができる。 At this time, the elongation at the softening point of the sealing film 100 is preferably 150% or more and 3500% or less. Thereby, since the film 100 for sealing can be extended with the more excellent shape followable | trackability with respect to the unevenness | corrugation 6 formed in the electronic component mounting board | substrate 45 at the time of this pressurization, for the sealing of the softened state With the film 100, the substrate 5 and the electronic component 4 can be coated on the upper side of the substrate 5 with excellent adhesion.
 そして、封止用フィルム100により、基板5と電子部品4とを優れた密着性(気密性)をもって被覆し、かつ、接続部材7が逃げ部27から露出した状態で、封止用フィルム100を冷却することで、この状態を維持したまま、封止用フィルム100が固化する。 The sealing film 100 is covered with the sealing film 100 with excellent adhesion (airtightness) and the connecting member 7 is exposed from the escape portion 27. By cooling, the sealing film 100 is solidified while maintaining this state.
 これにより、電子部品搭載基板45に形成された凹凸6の形状に追従した状態で、封止用フィルム100により、基板5の上側において絶縁層12が接触して基板5と電子部品4とが被覆され、かつ、接続部材7が逃げ部27から露出した封止用フィルム被覆電子部品搭載基板50が得られることとなる。そのため、この封止用フィルム被覆電子部品搭載基板50において、湿気や埃等の外部因子と電子部品4が接触するのを的確に抑制または防止することができる。したがって、得られる封止用フィルム被覆電子部品搭載基板50ひいてはこの封止用フィルム被覆電子部品搭載基板50を備える電子機器の信頼性の向上が図られる。 As a result, the insulating layer 12 contacts the upper side of the substrate 5 and the substrate 5 and the electronic component 4 are covered by the sealing film 100 in a state of following the shape of the unevenness 6 formed on the electronic component mounting substrate 45. In addition, the sealing film-covered electronic component mounting substrate 50 in which the connection member 7 is exposed from the escape portion 27 is obtained. Therefore, in the sealing film-covered electronic component mounting substrate 50, it is possible to accurately suppress or prevent the electronic component 4 from coming into contact with external factors such as moisture and dust. Accordingly, the reliability of the obtained electronic device including the sealing film-covered electronic component mounting substrate 50 and thus the sealing film-covered electronic component mounting substrate 50 can be improved.
 また、上記のように、得られた封止用フィルム被覆電子部品搭載基板50において、接続部材7が逃げ部27から露出しているため、電子部品搭載基板45と他の電子部品や電源との電気的な接続を実現することができる。 Further, as described above, in the obtained sealing film-covered electronic component mounting board 50, since the connecting member 7 is exposed from the escape portion 27, the electronic component mounting board 45 and other electronic components or power supply are not connected. An electrical connection can be realized.
 さらに、上記のような電子部品搭載基板45の被覆に用いられる封止用フィルム100は、絶縁層12と電磁波シールド層13との積層体で構成される。 Furthermore, the sealing film 100 used for covering the electronic component mounting substrate 45 as described above is composed of a laminate of the insulating layer 12 and the electromagnetic wave shielding layer 13.
 そのため、本工程において、絶縁層12を介して、電子部品4が電磁波シールド層13により被覆される。したがって、得られる封止用フィルム被覆電子部品搭載基板50を、電子部品4への電磁波によるノイズの影響が的確に抑制または防止されたものとすることができる。 Therefore, in this step, the electronic component 4 is covered with the electromagnetic wave shielding layer 13 through the insulating layer 12. Therefore, the obtained film-covered electronic component mounting substrate 50 for sealing can be one in which the influence of noise due to electromagnetic waves on the electronic component 4 is appropriately suppressed or prevented.
 また、電子部品4は、絶縁層12を介して電磁波シールド層13により封止されることから、電磁波シールド層13は、この電子部品4に対する絶縁性を確保した状態で、電子部品4を被覆することができる。 Further, since the electronic component 4 is sealed by the electromagnetic wave shielding layer 13 through the insulating layer 12, the electromagnetic wave shielding layer 13 covers the electronic component 4 in a state in which insulation against the electronic component 4 is secured. be able to.
 なお、封止用フィルム100の冷却と、雰囲気の加圧とは、加圧の後に冷却してもよいが、冷却と加圧とをほぼ同時に行うことが好ましい。これにより、凹凸6の形状に対応して、封止用フィルム100をより優れた密着性をもって被覆させることができる。 In addition, although cooling of the film 100 for sealing and pressurization of an atmosphere may be cooled after pressurization, it is preferable to perform cooling and pressurization substantially simultaneously. Thereby, the film 100 for sealing can be coat | covered with the more excellent adhesiveness corresponding to the shape of the unevenness | corrugation 6. FIG.
 上記の工程を経ることで、封止用フィルム100により、基板5と電子部品4とが被覆され、かつ、接続部材7が逃げ部27から露出した封止用フィルム被覆電子部品搭載基板50を得ることができる。 By passing through the above steps, the sealing film-covered electronic component mounting substrate 50 in which the substrate 5 and the electronic component 4 are covered with the sealing film 100 and the connection member 7 is exposed from the escape portion 27 is obtained. be able to.
 <第16実施形態>
 次に、本発明の封止用フィルム100の第16実施形態について説明する。
<Sixteenth Embodiment>
Next, a sixteenth embodiment of the sealing film 100 of the present invention will be described.
 図33は、本発明の封止用フィルムの第16実施形態を示す図((a)縦断面図、(b)平面図)、図34(a)~(c)は、図33に示す封止用フィルムを用いて電子部品搭載基板の封止方法を説明するための縦断面図である。なお、以下の説明では、説明の便宜上、図33、図34中の上側を「上」、下側を「下」と言う。 FIG. 33 is a view showing a sixteenth embodiment of the sealing film of the present invention ((a) longitudinal sectional view, (b) plan view), and FIGS. 34 (a) to (c) are the seals shown in FIG. It is a longitudinal cross-sectional view for demonstrating the sealing method of an electronic component mounting board | substrate using a film for a stop. In the following description, for convenience of description, the upper side in FIGS. 33 and 34 is referred to as “upper” and the lower side is referred to as “lower”.
 以下、第16実施形態について説明するが、前記第12実施形態と異なる点を中心に説明し、同様の事項についてはその説明を省略する。 Hereinafter, the sixteenth embodiment will be described, but the description will focus on differences from the twelfth embodiment, and description of similar matters will be omitted.
 第16実施形態では、封止用フィルム100が備える絶縁層12の構成が異なり、さらに被覆層14の形成が省略されていること以外は、前記第12実施形態と同様である。 The sixteenth embodiment is the same as the twelfth embodiment except that the configuration of the insulating layer 12 included in the sealing film 100 is different and the formation of the coating layer 14 is omitted.
 第16実施形態の封止用フィルム100において、絶縁層12は、図33、図34に示すように、電磁波シールド層13よりも大きく形成され、その端部が電磁波シールド層13の端部(縁部)から露出すること、換言すれば、電磁波シールド層13の端部を越えて突出することで形成された突出部16(第3突出部)を備えている。 In the sealing film 100 of the sixteenth embodiment, the insulating layer 12 is formed to be larger than the electromagnetic wave shielding layer 13 as shown in FIGS. 33 and 34, and the end portion thereof is the end portion (edge) of the electromagnetic wave shielding layer 13. A protrusion 16 (third protrusion) formed by protruding beyond the end of the electromagnetic wave shielding layer 13.
 このような封止用フィルム100を用いて、電子部品4および接続部材7が上面(一方の面)側に搭載された電子部品搭載基板45に対して、絶縁層12を下側とし電磁波シールド層13を上側にして被覆すると、接続部材7が逃げ部27から露出して封止されることなく、電子部品4は、絶縁層12を介して電磁波シールド層13で封止される。 Using such a sealing film 100, an electromagnetic wave shielding layer with the insulating layer 12 on the lower side with respect to the electronic component mounting substrate 45 on which the electronic component 4 and the connection member 7 are mounted on the upper surface (one surface) side. When the cover 13 is placed on the upper side, the connecting member 7 is not exposed and sealed from the escape portion 27, and the electronic component 4 is sealed with the electromagnetic wave shielding layer 13 through the insulating layer 12.
 さらに、本実施形態では、この封止用フィルム100を用いた被覆の際に、突出部16は、基板5の下面(他方の面)側に折り込むことが可能なように構成されている。そのため、基板5の下面の端部51を、この突出部16により被覆することができる。したがって、本実施形態の封止用フィルム100により、基板5の上面側ばかりでなく、基板5の下面における端部51まで突出部16により被覆することができ、より優れた気密性をもって、電子部品搭載基板45を被覆することができる。そのため、封止用フィルム100により被覆することで得られる封止用フィルム被覆電子部品搭載基板50において、基板5上の電子部品4が湿気や埃等の外部因子と接触するのをより的確に抑制または防止することができる。 Furthermore, in the present embodiment, the protrusion 16 is configured to be able to be folded to the lower surface (the other surface) side of the substrate 5 when the sealing film 100 is used for coating. Therefore, the end portion 51 on the lower surface of the substrate 5 can be covered with the protruding portion 16. Therefore, the sealing film 100 according to the present embodiment can cover not only the upper surface side of the substrate 5 but also the end portion 51 on the lower surface of the substrate 5 with the protruding portion 16, so that the electronic component has better airtightness. The mounting substrate 45 can be covered. Therefore, in the sealing film-covered electronic component mounting substrate 50 obtained by covering with the sealing film 100, the electronic component 4 on the substrate 5 is more accurately suppressed from coming into contact with external factors such as moisture and dust. Or it can be prevented.
 さらに、前記第1実施形態と同様に、前記軟化点における伸び率は、150%以上3500%以下である。これにより、基板5の上面側から下面側へ突出部16を折りこませることで、端部51を被覆する際に、突出部16が屈曲した屈曲部において破断してしまうのを的確に抑制または防止することができる。 Furthermore, as in the first embodiment, the elongation at the softening point is 150% or more and 3500% or less. Thereby, by folding the protrusion 16 from the upper surface side to the lower surface side of the substrate 5, when the end portion 51 is covered, the protrusion 16 is prevented from being broken at the bent portion. Can be prevented.
 また、前記第1実施形態と同様に、封止用フィルム100の25℃以上80℃以下の温度範囲での線膨張率は、100ppm/K以下であることが好ましい。このように、封止用フィルム100の線膨張率を規定することによっても、基板5の上面側から下面側への突出部16の折り込みを、突出部16を屈曲させる屈曲部において破断を生じさせることなく確実に実施させることができる。 Further, similarly to the first embodiment, the linear expansion coefficient in the temperature range of 25 ° C. to 80 ° C. of the sealing film 100 is preferably 100 ppm / K or less. Thus, by defining the linear expansion coefficient of the sealing film 100, the folding of the protruding portion 16 from the upper surface side to the lower surface side of the substrate 5 is caused to break at the bent portion that bends the protruding portion 16. It can be surely implemented without any problems.
 さらに、封止用フィルム100における、電磁波シールド層13の端部を越えて突出する突出部16の長さは、特に限定されず、0.1cm以上5.0cm以下であることが好ましく、0.5cm以上2.5cm以下であることがより好ましい。突出部16の長さをかかる範囲内に設定することにより、突出部16を、基板5の上面側から下面側に折り込みつつ、基板5の下面における端部51にまで到達させることができるため、突出部16による端部51の被覆を確実に実現させることができる。 Further, the length of the protruding portion 16 protruding beyond the end portion of the electromagnetic wave shielding layer 13 in the sealing film 100 is not particularly limited, and is preferably 0.1 cm or more and 5.0 cm or less. More preferably, it is 5 cm or more and 2.5 cm or less. By setting the length of the protrusion 16 within such a range, the protrusion 16 can reach the end 51 on the lower surface of the substrate 5 while being folded from the upper surface side to the lower surface side of the substrate 5. It is possible to reliably realize the covering of the end portion 51 by the protruding portion 16.
 [電子部品搭載基板の封止方法]
 次に、上述した第16実施形態の封止用フィルムを用いた電子部品搭載基板の封止方法について説明する。
[Method of sealing electronic component mounting board]
Next, an electronic component mounting substrate sealing method using the sealing film of the sixteenth embodiment described above will be described.
 本実施形態の電子部品搭載基板の封止方法は、基板5と電子部品4とを覆い、かつ、接続部材7に逃げ部27が対応するように、絶縁層12を電子部品搭載基板45側にして封止用フィルム100を電子部品搭載基板45上に配置しつつ、突出部16を、基板5の下面(他方の面)側に折り込むことにより基板5の下面における端部51に接触させる配置工程と、封止用フィルム100を加熱し軟化させるとともに、減圧する加熱・減圧工程と、封止用フィルム100を冷却させるとともに、加圧することで、突出部16が基板5の下面における端部51に接触した状態で、基板5と電子部品4とを封止用フィルム100で封止する冷却・加圧工程とを有する。 In the sealing method of the electronic component mounting substrate of the present embodiment, the insulating layer 12 is placed on the electronic component mounting substrate 45 side so as to cover the substrate 5 and the electronic component 4 and the escape portion 27 corresponds to the connecting member 7. The disposing step of contacting the end portion 51 on the lower surface of the substrate 5 by folding the protruding portion 16 toward the lower surface (the other surface) of the substrate 5 while disposing the sealing film 100 on the electronic component mounting substrate 45. And heating and depressurizing step for reducing the pressure while heating and softening the sealing film 100, and cooling and pressurizing the sealing film 100, so that the protruding portion 16 is applied to the end portion 51 on the lower surface of the substrate 5. A cooling / pressurizing step of sealing the substrate 5 and the electronic component 4 with the sealing film 100 in a contact state is provided.
 以下、電子部品搭載基板の封止方法の各工程について、順次説明する。
(配置工程)
 まず、図34(a)に示すように、封止用フィルム100が備える絶縁層12および電磁波シールド層13のうち絶縁層12を、電子部品搭載基板45に対向させた状態で、電子部品搭載基板45が備える基板5と電子部品4とを覆い、かつ、接続部材7に逃げ部27が対応するように、封止用フィルム100を電子部品搭載基板45上に配置する。
 そして、この際、電磁波シールド層13の端部を越えて突出する突出部16を、基板5の下面側に折り込み、これにより、突出部16を端部51に接触させる(図34(b))。
Hereafter, each process of the sealing method of an electronic component mounting substrate is demonstrated sequentially.
(Arrangement process)
First, as shown in FIG. 34 (a), the electronic component mounting substrate in the state where the insulating layer 12 of the insulating film 12 and the electromagnetic wave shielding layer 13 included in the sealing film 100 is opposed to the electronic component mounting substrate 45. The sealing film 100 is disposed on the electronic component mounting substrate 45 so as to cover the substrate 5 and the electronic component 4 included in the 45 and so that the escape portion 27 corresponds to the connecting member 7.
At this time, the protruding portion 16 protruding beyond the end portion of the electromagnetic wave shielding layer 13 is folded to the lower surface side of the substrate 5, thereby bringing the protruding portion 16 into contact with the end portion 51 (FIG. 34B). .
(加熱・減圧工程)
 次に、図34(b)に示す状態を維持したまま、封止用フィルム100を加熱し軟化させるとともに、減圧する。
(Heating and decompression process)
Next, the sealing film 100 is heated and softened while maintaining the state shown in FIG.
 このように、封止用フィルム100を加熱することにより、封止用フィルム100すなわち絶縁層12および電磁波シールド層13が軟化し、その結果、基板5の上面側では、基板5に電子部品4を搭載することにより形成された凹凸6の形状に対して、追従し得る状態となり、さらに、基板5の下面側では、端部51を、被覆し得る状態となる。 Thus, by heating the sealing film 100, the sealing film 100, that is, the insulating layer 12 and the electromagnetic wave shielding layer 13 are softened. As a result, the electronic component 4 is attached to the substrate 5 on the upper surface side of the substrate 5. It will be in the state which can follow the shape of the unevenness | corrugation 6 formed by mounting, and also will be in the state which can coat | cover the edge part 51 in the lower surface side of the board | substrate 5. FIG.
 また、この際、電子部品搭載基板45および封止用フィルム100を、減圧雰囲気下に配置することで、封止用フィルム100の外側ばかりでなく、電子部品搭載基板45と封止用フィルム100との間の気体(空気)が脱気される。 At this time, the electronic component mounting substrate 45 and the sealing film 100 are arranged in a reduced-pressure atmosphere, so that not only the outside of the sealing film 100 but also the electronic component mounting substrate 45 and the sealing film 100 The gas (air) in between is degassed.
 これにより、封止用フィルム100が伸展しながら、基板5の上面側では、凹凸6の形状、すなわち、基板5上の電子部品4の形状に若干追従した状態となり、基板5の下面側では、端部51を若干被覆した状態となる。 Thereby, while the sealing film 100 extends, the shape of the unevenness 6 on the upper surface side of the substrate 5, that is, the shape of the electronic component 4 on the substrate 5 is slightly followed, and on the lower surface side of the substrate 5, The end 51 is slightly covered.
 本工程により、封止用フィルム100を、電子部品搭載基板45の上面側に形成された凹凸6の形状に追従し得る状態とし、さらに、突出部15が基板5の下面側に折り込まれて、端部51を被覆し得る状態とすることができる。 By this step, the sealing film 100 can be made to follow the shape of the unevenness 6 formed on the upper surface side of the electronic component mounting substrate 45, and the protrusion 15 is folded to the lower surface side of the substrate 5, The end portion 51 can be covered.
(冷却・加圧工程)
 次に、図36(c)に示すように、封止用フィルム100を冷却させるとともに、加圧する。
(Cooling / pressurization process)
Next, as shown in FIG. 36C, the sealing film 100 is cooled and pressurized.
 このように、減圧された雰囲気から加圧することで、前記加熱・減圧工程において、電子部品搭載基板45と封止用フィルム100との間が脱気され、減圧状態が維持されていることから、封止用フィルム100がさらに伸展することとなる。 Thus, by pressurizing from the decompressed atmosphere, in the heating and decompression step, the space between the electronic component mounting substrate 45 and the sealing film 100 is degassed, and the decompressed state is maintained. The sealing film 100 is further extended.
 その結果、基板5の上側では、接続部材7が逃げ部27から露出して封止されることなく、凹凸6の形状(電子部品4の形状)に対して優れた密着度(気密度)で追従し、さらに、端部51に対して優れた密着度で被覆した状態で、軟化した状態の封止用フィルム100により、基板5と電子部品4とが被覆される。 As a result, on the upper side of the substrate 5, the connection member 7 is not exposed and sealed from the escape portion 27, and has excellent adhesion (air density) with respect to the shape of the unevenness 6 (the shape of the electronic component 4). Further, the substrate 5 and the electronic component 4 are covered with the softened sealing film 100 in a state where it is covered with an excellent degree of adhesion to the end portion 51.
 この際、封止用フィルム100の軟化点における伸び率が150%以上3500%以下となっている。これにより、封止用フィルム100は、この加圧時に、電子部品搭載基板45に形成された凹凸6に対してより優れた形状追従性をもって伸展させることができるため、軟化した状態の封止用フィルム100により、基板5の上側において基板5と電子部品4とを、さらには端部51を優れた密着性をもって被覆することができる。また、基板5の上面側から下面側へ突出部16を折りこませることで端部51に接触させる際に、突出部16が屈曲した屈曲部において破断してしまうのを的確に抑制または防止することができる。 At this time, the elongation at the softening point of the sealing film 100 is 150% or more and 3500% or less. Thereby, since the film 100 for sealing can be extended with the more excellent shape followable | trackability with respect to the unevenness | corrugation 6 formed in the electronic component mounting board | substrate 45 at the time of this pressurization, for the sealing of the softened state The film 100 can cover the substrate 5 and the electronic component 4 on the upper side of the substrate 5 and the end portion 51 with excellent adhesion. Further, when the protruding portion 16 is folded from the upper surface side to the lower surface side of the substrate 5 to be brought into contact with the end portion 51, it is possible to accurately suppress or prevent the protruding portion 16 from breaking at the bent portion. be able to.
 そして、封止用フィルム100により、基板5と電子部品4とを、さらには端部51を優れた密着性(気密性)をもって被覆し、かつ、接続部材7が逃げ部27から露出した状態で、封止用フィルム100を冷却することで、この状態を維持したまま、封止用フィルム100が固化する。 Then, the sealing film 100 covers the substrate 5 and the electronic component 4, and further covers the end portion 51 with excellent adhesion (airtightness), and the connection member 7 is exposed from the escape portion 27. By cooling the sealing film 100, the sealing film 100 is solidified while maintaining this state.
 これにより、電子部品搭載基板45に形成された凹凸6の形状に追従した状態で、封止用フィルム100により、基板5の上面側において、絶縁層12が接触して基板5と電子部品4とが被覆され、かつ、接続部材7が逃げ部27から露出し、さらに、基板5の下面側において、折り込まれた突出部16により端部51が被覆された封止用フィルム被覆電子部品搭載基板50が得られることとなる。そのため、この封止用フィルム被覆電子部品搭載基板50において、湿気や埃等の外部因子と電子部品4が接触するのをより的確に抑制または防止することができる。したがって、得られる封止用フィルム被覆電子部品搭載基板50ひいてはこの封止用フィルム被覆電子部品搭載基板50を備える電子機器のより信頼性の向上が図られる。 As a result, the insulating layer 12 is brought into contact with the sealing film 100 on the upper surface side of the substrate 5 in a state following the shape of the unevenness 6 formed on the electronic component mounting substrate 45, and the substrate 5 and the electronic component 4. And the connecting member 7 is exposed from the escape portion 27, and further, the sealing film-covered electronic component mounting substrate 50 in which the end portion 51 is covered with the folded protrusion 16 on the lower surface side of the substrate 5. Will be obtained. Therefore, in the sealing film-covered electronic component mounting substrate 50, it is possible to more accurately suppress or prevent the electronic component 4 from coming into contact with external factors such as moisture and dust. Therefore, the reliability of the obtained electronic device including the sealing film-covered electronic component mounting substrate 50 and thus the sealing film-covered electronic component mounting substrate 50 can be improved.
 また、上記のように、得られた封止用フィルム被覆電子部品搭載基板50において、接続部材7が逃げ部27から露出しているため、電子部品搭載基板45と他の電子部品や電源との電気的な接続を実現することができる。 Further, as described above, in the obtained sealing film-covered electronic component mounting board 50, since the connecting member 7 is exposed from the escape portion 27, the electronic component mounting board 45 and other electronic components or power supply are not connected. An electrical connection can be realized.
 上記の工程を経ることで、封止用フィルム100により、基板5と電子部品4とが被覆され、かつ、接続部材7が逃げ部27から露出した封止用フィルム被覆電子部品搭載基板50を得ることができる。 By passing through the above steps, the sealing film-covered electronic component mounting substrate 50 in which the substrate 5 and the electronic component 4 are covered with the sealing film 100 and the connection member 7 is exposed from the escape portion 27 is obtained. be able to.
 <第17実施形態>
 [封止用フィルム]
 次に、本発明の封止用フィルム100の第17実施形態について説明する。
<Seventeenth Embodiment>
[Sealing film]
Next, a seventeenth embodiment of the sealing film 100 of the present invention will be described.
 図35は、本発明の封止用フィルムの第17実施形態を示す図((a)縦断面図、(b)平面図)、図36(a)~(c)は、図35に示す封止用フィルムを用いて電子部品搭載基板の封止方法を説明するための縦断面図である。なお、以下の説明では、説明の便宜上、図35、図36中の上側を「上」、下側を「下」と言う。 FIG. 35 is a view showing a seventeenth embodiment of the sealing film of the present invention ((a) longitudinal sectional view, (b) plan view), and FIGS. 36 (a) to (c) are the seals shown in FIG. It is a longitudinal cross-sectional view for demonstrating the sealing method of an electronic component mounting board | substrate using a film for a stop. In the following description, for convenience of description, the upper side in FIGS. 35 and 36 is referred to as “upper” and the lower side is referred to as “lower”.
 以下、第17実施形態について説明するが、前記第12実施形態と異なる点を中心に説明し、同様の事項についてはその説明を省略する。 Hereinafter, although the seventeenth embodiment will be described, the points different from the twelfth embodiment will be mainly described, and description of similar matters will be omitted.
 第17実施形態では、封止用フィルム100が備える電磁波シールド層13および被覆層14の構成が異なり、さらに、この封止用フィルム100を用いて被覆する電子部品搭載基板45の構成が異なること以外は、前記第12実施形態と同様である。 In the seventeenth embodiment, the configurations of the electromagnetic wave shielding layer 13 and the covering layer 14 included in the sealing film 100 are different, and further, the configuration of the electronic component mounting substrate 45 covered with the sealing film 100 is different. Is the same as in the twelfth embodiment.
 第17実施形態の封止用フィルム100において、電磁波シールド層13および被覆層14は、図35、図36に示すように、絶縁層12よりも大きく形成されている。これにより、電磁波シールド層13および被覆層14のうち絶縁層12側に位置する電磁波シールド層13の端部が絶縁層12の端部(縁部)から露出している。換言すれば、電磁波シールド層13が、絶縁層12の端部を越えて突出することで形成された突出部17(第2突出部)を備えている。 In the sealing film 100 of the seventeenth embodiment, the electromagnetic wave shielding layer 13 and the covering layer 14 are formed larger than the insulating layer 12 as shown in FIGS. Thereby, the edge part of the electromagnetic wave shielding layer 13 located in the insulating layer 12 side among the electromagnetic wave shielding layer 13 and the coating layer 14 is exposed from the edge part (edge part) of the insulating layer 12. In other words, the electromagnetic wave shielding layer 13 includes the protruding portion 17 (second protruding portion) formed by protruding beyond the end portion of the insulating layer 12.
 また、第17実施形態の封止用フィルム100により被覆される電子部品搭載基板45は、図35に示すように、基板5と、基板5の上面(一方の面)側の中央部に搭載(載置)された電子部品4と、この電子部品4に電気的に接続され、基板5の上面(一方の面)側の端部52に形成された接続部材7および電極3とを備えている。このような電子部品搭載基板45において、基板5の上面への電子部品4および電極3の搭載により、基板5上に凸部61と凹部62とからなる凹凸6が形成される。なお、電極3としては、例えば、外部から電気を供給するための電源と接続するための電極、電子部品搭載基板45の外側に位置する、他の電子部品と電気的に接続するための電極、および、電子部品4を接地するためのグランド電極等が挙げられる。 Moreover, the electronic component mounting substrate 45 covered with the sealing film 100 of the seventeenth embodiment is mounted on the substrate 5 and the central portion on the upper surface (one surface) side of the substrate 5 as shown in FIG. The electronic component 4 placed and the connection member 7 and the electrode 3 that are electrically connected to the electronic component 4 and formed on the end portion 52 on the upper surface (one surface) side of the substrate 5 are provided. . In such an electronic component mounting substrate 45, the unevenness 6 including the convex portion 61 and the concave portion 62 is formed on the substrate 5 by mounting the electronic component 4 and the electrode 3 on the upper surface of the substrate 5. In addition, as the electrode 3, for example, an electrode for connecting to a power source for supplying electricity from the outside, an electrode for electrically connecting to another electronic component located outside the electronic component mounting board 45, In addition, a ground electrode for grounding the electronic component 4 may be used.
 このように電子部品4、電極3および接続部材7が上面側に搭載された電子部品搭載基板45に対して、絶縁層12を下側とし、被覆層14を上側にして、封止用フィルム100を用いて被覆すると、接続部材7が逃げ部27から露出して封止されることなく、電子部品4は、絶縁層12を介して電磁波シールド層13で封止される。 Thus, with respect to the electronic component mounting substrate 45 on which the electronic component 4, the electrode 3, and the connection member 7 are mounted on the upper surface side, the insulating layer 12 is on the lower side and the covering layer 14 is on the upper side, and the sealing film 100 The electronic component 4 is sealed with the electromagnetic wave shielding layer 13 through the insulating layer 12 without the connection member 7 being exposed and sealed from the escape portion 27.
 さらに、本実施形態では、この封止用フィルム100を用いた被覆の際に、電磁波シールド層13は、このものが備える突出部17において、絶縁層12から露出している。そのため、基板5の上面の端部52に形成された電極3に、この突出部17を接触させた状態とすることができる。したがって、この突出部17は、電磁波シールド層13で構成され導電性を有することから、得られた封止用フィルム被覆電子部品搭載基板50おいて、この電磁波シールド層13を介した電極3と外部との電気的な接続を確保することができる。なお、本実施形態では、電磁波シールド層13の上面のほぼ全面には被覆層14が形成されていることから、電磁波シールド層13を介した電極3と外部との電気的な接続を確保する場合には、被覆層14の一部を除去して電磁波シールド層13が露出する露出部を形成し、この露出部において、電磁波シールド層13と外部とを電気的に接続することで、この接続が実現される。 Furthermore, in the present embodiment, the electromagnetic wave shielding layer 13 is exposed from the insulating layer 12 at the projecting portion 17 included in the covering when the sealing film 100 is used for coating. Therefore, the protruding portion 17 can be brought into contact with the electrode 3 formed on the end portion 52 on the upper surface of the substrate 5. Therefore, since the protrusion 17 is composed of the electromagnetic wave shielding layer 13 and has conductivity, in the obtained film-covered electronic component mounting substrate 50 for sealing, the electrode 3 and the outside through the electromagnetic wave shielding layer 13 are provided. Can be secured. In the present embodiment, since the coating layer 14 is formed on almost the entire upper surface of the electromagnetic wave shielding layer 13, the electrical connection between the electrode 3 and the outside via the electromagnetic wave shielding layer 13 is ensured. Is formed by removing a part of the coating layer 14 to form an exposed portion where the electromagnetic wave shielding layer 13 is exposed, and electrically connecting the electromagnetic wave shielding layer 13 and the outside at the exposed portion. Realized.
 また、封止用フィルム100における、絶縁層12の端部を越えて突出する電磁波シールド層13の突出部17の長さは、特に限定されず、0.1cm以上5.0cm以下であることが好ましく、0.5cm以上2.5cm以下であることがより好ましい。突出部17の長さをかかる範囲内に設定することで、この突出部17により、基板5の上面側に位置する電極3を被覆して、突出部17と電極3との電気的な接続を実現することができる。 In addition, the length of the protruding portion 17 of the electromagnetic wave shielding layer 13 protruding beyond the end portion of the insulating layer 12 in the sealing film 100 is not particularly limited, and may be 0.1 cm or more and 5.0 cm or less. Preferably, it is 0.5 cm or more and 2.5 cm or less. By setting the length of the protruding portion 17 within such a range, the protruding portion 17 covers the electrode 3 positioned on the upper surface side of the substrate 5, and the electric connection between the protruding portion 17 and the electrode 3 is established. Can be realized.
 [電子部品搭載基板の封止方法]
 次に、上述した第17実施形態の封止用フィルムを用いた電子部品搭載基板の封止方法について説明する。
[Method of sealing electronic component mounting board]
Next, a method for sealing an electronic component mounting board using the sealing film of the seventeenth embodiment described above will be described.
 本実施形態の電子部品搭載基板の封止方法は、基板5と電子部品4とを覆い、かつ、接続部材7に逃げ部27が対応するように、絶縁層12を電子部品搭載基板45側にして封止用フィルム100を電子部品搭載基板45上に配置しつつ、突出部17を、基板5の上面(一方の面)側の電極3に接触させる配置工程と、封止用フィルム100を加熱し軟化させるとともに、減圧する加熱・減圧工程と、封止用フィルム100を冷却させるとともに、加圧することで、突出部17が電極3に接触した状態で、基板5と電子部品4と電極3とを封止用フィルム100で封止する冷却・加圧工程とを有する。 In the sealing method of the electronic component mounting substrate of the present embodiment, the insulating layer 12 is placed on the electronic component mounting substrate 45 side so as to cover the substrate 5 and the electronic component 4 and the escape portion 27 corresponds to the connecting member 7. While placing the sealing film 100 on the electronic component mounting substrate 45, the placement step of bringing the protruding portion 17 into contact with the electrode 3 on the upper surface (one surface) side of the substrate 5, and heating the sealing film 100 The substrate 5, the electronic component 4, and the electrode 3 can be softened and heated while the pressure is reduced, and the sealing film 100 is cooled and pressurized so that the protrusion 17 is in contact with the electrode 3. And a cooling / pressurizing step for sealing with a sealing film 100.
 以下、電子部品搭載基板の封止方法の各工程について、順次説明する。
(配置工程)
 まず、図36(a)に示すように、封止用フィルム100が備える絶縁層12、電磁波シールド層13および被覆層14のうち絶縁層12を、電子部品搭載基板45に対向させた状態で、電子部品搭載基板45が備える基板5と電子部品4と電極3とを覆い、かつ、接続部材7に逃げ部27が対応するように、封止用フィルム100を電子部品搭載基板45上に配置する。
Hereafter, each process of the sealing method of an electronic component mounting substrate is demonstrated sequentially.
(Arrangement process)
First, as shown in FIG. 36A, in the state where the insulating layer 12 of the insulating film 12, the electromagnetic wave shielding layer 13 and the covering layer 14 included in the sealing film 100 is opposed to the electronic component mounting substrate 45, The sealing film 100 is disposed on the electronic component mounting substrate 45 so as to cover the substrate 5, the electronic component 4, and the electrode 3 included in the electronic component mounting substrate 45 and so that the escape portion 27 corresponds to the connection member 7. .
 この際、封止用フィルム100の中央部に位置する絶縁層12により電子部品4を被覆させ、絶縁層12の端部を越えて突出する突出部17により電極3を被覆させる(図36(b))。 At this time, the electronic component 4 is covered with the insulating layer 12 located at the center of the sealing film 100, and the electrode 3 is covered with the protruding portion 17 protruding beyond the end of the insulating layer 12 (FIG. 36B). )).
(加熱・減圧工程)
 次に、図36(b)に示す状態を維持したまま、封止用フィルム100を加熱し軟化させるとともに、減圧する。
(Heating and decompression process)
Next, while maintaining the state shown in FIG. 36 (b), the sealing film 100 is heated and softened, and the pressure is reduced.
 このように、封止用フィルム100を加熱することにより、封止用フィルム100すなわち絶縁層12、電磁波シールド層13および被覆層14が軟化し、その結果、基板5の上面側では、基板5に電子部品4および電極3を搭載することにより形成された凹凸6の形状に対して、追従し得る状態となる。 Thus, by heating the sealing film 100, the sealing film 100, that is, the insulating layer 12, the electromagnetic wave shielding layer 13, and the coating layer 14 are softened. As a result, on the upper surface side of the substrate 5, It will be in the state which can follow the shape of the unevenness | corrugation 6 formed by mounting the electronic component 4 and the electrode 3. FIG.
 また、この際、電子部品搭載基板45および封止用フィルム100を、減圧雰囲気下に配置することで、封止用フィルム100の外側ばかりでなく、電子部品搭載基板45と封止用フィルム100との間の気体(空気)が脱気される。 At this time, the electronic component mounting substrate 45 and the sealing film 100 are arranged in a reduced-pressure atmosphere, so that not only the outside of the sealing film 100 but also the electronic component mounting substrate 45 and the sealing film 100 The gas (air) in between is degassed.
 これにより、封止用フィルム100が伸展しながら、基板5の上側では、凹凸6の形状、すなわち、基板5上の電子部品4および電極3の形状に若干追従した状態となる。 Thereby, while the sealing film 100 extends, the shape of the unevenness 6, that is, the shape of the electronic component 4 and the electrode 3 on the substrate 5 is slightly followed on the upper side of the substrate 5.
 本工程により、電子部品搭載基板45の上面側に形成された凹凸6の形状に対して、封止用フィルム100を、追従し得る状態とすることができる。 By this step, the sealing film 100 can be made to follow the shape of the irregularities 6 formed on the upper surface side of the electronic component mounting substrate 45.
(冷却・加圧工程)
 次に、図36(c)に示すように、封止用フィルム100を冷却させるとともに、加圧する。
(Cooling / pressurization process)
Next, as shown in FIG. 36C, the sealing film 100 is cooled and pressurized.
 このように、減圧された雰囲気から加圧することで、前記加熱・減圧工程において、電子部品搭載基板45と封止用フィルム100との間が脱気され、減圧状態が維持されていることから、封止用フィルム100がさらに伸展することとなる。 Thus, by pressurizing from the decompressed atmosphere, in the heating and decompression step, the space between the electronic component mounting substrate 45 and the sealing film 100 is degassed, and the decompressed state is maintained. The sealing film 100 is further extended.
 その結果、基板5の上側では、接続部材7が逃げ部27から露出して封止されることなく、凹凸6の形状(電子部品4および電極3の形状)に優れた密着度(気密度)で追従した状態で、軟化した状態の封止用フィルム100により、基板5と電子部品4と電極3とが被覆される。 As a result, on the upper side of the substrate 5, the connection member 7 is not exposed and sealed from the escape portion 27, and the adhesion (air density) excellent in the shape of the unevenness 6 (the shape of the electronic component 4 and the electrode 3). The substrate 5, the electronic component 4, and the electrode 3 are covered with the sealing film 100 in a softened state following the above.
 この際、封止用フィルム100の軟化点における伸び率が150%以上3500%以下となっている。これにより、封止用フィルム100は、この加圧時に、電子部品搭載基板45に形成された凹凸6に対してより優れた形状追従性をもって伸展させることができるため、軟化した状態の封止用フィルム100により、基板5の上側において基板5と電子部品4と電極3とを優れた密着性をもって被覆することができる。 At this time, the elongation at the softening point of the sealing film 100 is 150% or more and 3500% or less. Thereby, since the film 100 for sealing can be extended with the more excellent shape followable | trackability with respect to the unevenness | corrugation 6 formed in the electronic component mounting board | substrate 45 at the time of this pressurization, for the sealing of the softened state With the film 100, the substrate 5, the electronic component 4, and the electrode 3 can be coated on the upper side of the substrate 5 with excellent adhesion.
 そして、封止用フィルム100により、基板5と電子部品4と電極3とを優れた密着性(気密性)をもって被覆し、かつ、接続部材7が逃げ部27から露出した状態で、封止用フィルム100を冷却することで、この状態を維持したまま、封止用フィルム100が固化する。 Then, the sealing film 100 covers the substrate 5, the electronic component 4, and the electrode 3 with excellent adhesion (airtightness), and the connection member 7 is exposed from the escape portion 27. By cooling the film 100, the sealing film 100 is solidified while maintaining this state.
 これにより、電子部品搭載基板45に形成された凹凸6の形状に追従した状態で、封止用フィルム100により、基板5の上側において、絶縁層12が接触して基板5と電子部品4とが被覆され、かつ、接続部材7が逃げ部27から露出し、さらに、電磁波シールド層13が接触して電極3が被覆された封止用フィルム被覆電子部品搭載基板50が得られることとなる。そのため、この封止用フィルム被覆電子部品搭載基板50において、湿気や埃等の外部因子と電子部品4および電極3が接触するのを的確に抑制または防止することができる。したがって、得られる封止用フィルム被覆電子部品搭載基板50ひいてはこの封止用フィルム被覆電子部品搭載基板50を備える電子機器の信頼性の向上が図られる。 Thereby, the insulating layer 12 is brought into contact with the upper side of the substrate 5 by the sealing film 100 in a state following the shape of the unevenness 6 formed on the electronic component mounting substrate 45, so that the substrate 5 and the electronic component 4 are Thus, the sealing film-covered electronic component mounting substrate 50 that is covered and the connection member 7 is exposed from the escape portion 27 and is further in contact with the electromagnetic wave shield layer 13 to cover the electrode 3 is obtained. Therefore, in this film-covered electronic component mounting substrate 50 for sealing, it is possible to accurately suppress or prevent the external component such as moisture and dust from contacting the electronic component 4 and the electrode 3. Accordingly, the reliability of the obtained electronic device including the sealing film-covered electronic component mounting substrate 50 and thus the sealing film-covered electronic component mounting substrate 50 can be improved.
 また、上記のように、得られた封止用フィルム被覆電子部品搭載基板50において、接続部材7が逃げ部27から露出しているため、電子部品搭載基板45と他の電子部品や電源との電気的な接続を実現することができる。 Further, as described above, in the obtained sealing film-covered electronic component mounting board 50, since the connecting member 7 is exposed from the escape portion 27, the electronic component mounting board 45 and other electronic components or power supply are not connected. An electrical connection can be realized.
 また、上記のような電子部品搭載基板45の被覆に用いられる封止用フィルム100は、絶縁層12、電磁波シールド層13および被覆層14の積層体で構成されるが、電磁波シールド層13は、その端部において、絶縁層12の端部を越えて突出することで形成された突出部17を備えている。そして、本実施形態では、この突出部17が、絶縁層12を介することなく、電極3を直接被覆する。これにより、導電性を有する突出部17(電磁波シールド層13)に電極3が電気的に接続されるため、得られる封止用フィルム被覆電子部品搭載基板50において、この突出部17を介した電極3と外部との電気的な接続を確保することが可能となる。 Further, the sealing film 100 used for covering the electronic component mounting substrate 45 as described above is composed of a laminate of the insulating layer 12, the electromagnetic wave shielding layer 13, and the covering layer 14, but the electromagnetic wave shielding layer 13 is At the end portion, a protruding portion 17 formed by protruding beyond the end portion of the insulating layer 12 is provided. In the present embodiment, the protruding portion 17 directly covers the electrode 3 without the insulating layer 12 interposed therebetween. Thereby, since the electrode 3 is electrically connected to the projecting portion 17 (electromagnetic wave shield layer 13) having conductivity, in the obtained film-covered electronic component mounting substrate 50 for sealing, the electrode via the projecting portion 17 is used. 3 and the outside can be secured.
 上記の工程を経ることで、封止用フィルム100により、基板5と電子部品4と電極3とが被覆され、かつ、接続部材7が逃げ部27から露出した封止用フィルム被覆電子部品搭載基板50を得ることができる。 Through the above steps, the substrate 5, the electronic component 4, and the electrode 3 are covered with the sealing film 100 and the connecting member 7 is exposed from the escape portion 27. 50 can be obtained.
 <第18実施形態>
 [封止用フィルム]
 次に、本発明の封止用フィルム100の第18実施形態について説明する。
<Eighteenth embodiment>
[Sealing film]
Next, an eighteenth embodiment of the sealing film 100 of the present invention will be described.
 図37は、本発明の封止用フィルムの第18実施形態を示す図((a)縦断面図、(b)平面図)、図38(a)~(c)は、図37に示す封止用フィルムを用いて電子部品搭載基板の封止方法を説明するための縦断面図である。なお、以下の説明では、説明の便宜上、図37、図38中の上側を「上」、下側を「下」と言う。 FIG. 37 is a view showing an eighteenth embodiment of the sealing film of the present invention ((a) longitudinal sectional view, (b) plan view), and FIGS. 38 (a) to (c) are views showing the sealing shown in FIG. It is a longitudinal cross-sectional view for demonstrating the sealing method of an electronic component mounting board | substrate using a film for a stop. In the following description, for convenience of explanation, the upper side in FIGS. 37 and 38 is referred to as “upper” and the lower side is referred to as “lower”.
 以下、第18実施形態について説明するが、前記第12実施形態と異なる点を中心に説明し、同様の事項についてはその説明を省略する。 Hereinafter, the eighteenth embodiment will be described, but the description will focus on differences from the twelfth embodiment, and description of similar matters will be omitted.
 第18実施形態では、封止用フィルム100が備える電磁波シールド層13の構成が異なり、さらに、被覆層14の形成が省略されているとともに、この封止用フィルム100を用いて被覆する電子部品搭載基板45の構成が異なること以外は、前記第12実施形態と同様である。 In the eighteenth embodiment, the configuration of the electromagnetic wave shielding layer 13 included in the sealing film 100 is different, and further, the formation of the coating layer 14 is omitted, and the electronic component mounting to be coated using the sealing film 100 is performed. The substrate 45 is the same as the twelfth embodiment except that the configuration of the substrate 45 is different.
 第18実施形態の封止用フィルム100において、電磁波シールド層13は、図37、図38に示すように、絶縁層12よりも大きく形成されている。これにより、電磁波シールド層13の端部が絶縁層12の端部(縁部)から露出すること、換言すれば、絶縁層12の端部を越えて突出することで形成された突出部17(第2突出部)を備えている。 In the sealing film 100 of the eighteenth embodiment, the electromagnetic wave shielding layer 13 is formed larger than the insulating layer 12 as shown in FIGS. Thus, the end portion of the electromagnetic wave shielding layer 13 is exposed from the end portion (edge portion) of the insulating layer 12, in other words, the protruding portion 17 (formed by protruding beyond the end portion of the insulating layer 12 ( 2nd protrusion part) is provided.
 また、第18実施形態の封止用フィルム100により被覆される電子部品搭載基板45は、図38に示すように、基板5と、基板5の上面(一方の面)側の中央部に搭載(載置)された電子部品4と、この電子部品4に電気的に接続され、基板5の上面(一方の面)側の端部52に形成された接続部材7および電極3とを備えている。このような電子部品搭載基板45において、基板5の上面への電子部品4および電極3の搭載により、基板5上に凸部61と凹部62とからなる凹凸6が形成される。なお、電極3としては、例えば、外部から電気を供給するための電源と接続するための電極、電子部品搭載基板45の外側に位置する、他の電子部品と電気的に接続するための電極、および、電子部品4を接地するためのグランド電極等が挙げられる。 Moreover, the electronic component mounting substrate 45 covered with the sealing film 100 of the eighteenth embodiment is mounted on the substrate 5 and the central portion on the upper surface (one surface) side of the substrate 5 as shown in FIG. The electronic component 4 placed and the connection member 7 and the electrode 3 that are electrically connected to the electronic component 4 and formed on the end portion 52 on the upper surface (one surface) side of the substrate 5 are provided. . In such an electronic component mounting substrate 45, the unevenness 6 including the convex portion 61 and the concave portion 62 is formed on the substrate 5 by mounting the electronic component 4 and the electrode 3 on the upper surface of the substrate 5. In addition, as the electrode 3, for example, an electrode for connecting to a power source for supplying electricity from the outside, an electrode for electrically connecting to another electronic component located outside the electronic component mounting board 45, In addition, a ground electrode for grounding the electronic component 4 may be used.
 このように電子部品4、電極3および接続部材7が上面側に搭載された電子部品搭載基板45に対して、絶縁層12を下側とし、電磁波シールド層13を上側にして、封止用フィルム100を用いて被覆すると、接続部材7が逃げ部27から露出して封止されることなく、電子部品4は、絶縁層12を介して電磁波シールド層13で封止される。 Thus, with respect to the electronic component mounting substrate 45 on which the electronic component 4, the electrode 3, and the connection member 7 are mounted on the upper surface side, the insulating layer 12 is on the lower side, the electromagnetic wave shielding layer 13 is on the upper side, and the sealing film When covering with 100, the electronic component 4 is sealed with the electromagnetic wave shielding layer 13 through the insulating layer 12 without the connecting member 7 being exposed and sealed from the escape portion 27.
 さらに、本実施形態では、この封止用フィルム100を用いた被覆の際に、電磁波シールド層13は、このものが備える突出部17において、絶縁層12から露出している。そのため、基板5の上面の端部52に形成された電極3に、この突出部17を接触させた状態とすることができる。したがって、この突出部17は、電磁波シールド層13で構成され導電性を有することから、得られた封止用フィルム被覆電子部品搭載基板50おいて、この電磁波シールド層13を介した電極3と外部との電気的な接続を確保することができる。 Furthermore, in the present embodiment, the electromagnetic wave shielding layer 13 is exposed from the insulating layer 12 at the projecting portion 17 included in the covering when the sealing film 100 is used for coating. Therefore, the protruding portion 17 can be brought into contact with the electrode 3 formed on the end portion 52 on the upper surface of the substrate 5. Therefore, since the protrusion 17 is composed of the electromagnetic wave shielding layer 13 and has conductivity, in the obtained film-covered electronic component mounting substrate 50 for sealing, the electrode 3 and the outside through the electromagnetic wave shielding layer 13 are provided. Can be secured.
 また、封止用フィルム100における、絶縁層12の端部を越えて突出する電磁波シールド層13の突出部17の長さは、特に限定されず、0.1cm以上5.0cm以下であることが好ましく、0.5cm以上2.5cm以下であることがより好ましい。突出部17の長さをかかる範囲内に設定することで、この突出部17により、基板5の上側に位置する電極3を被覆して、突出部17と電極3との電気的な接続を実現することができる。 In addition, the length of the protruding portion 17 of the electromagnetic wave shielding layer 13 protruding beyond the end portion of the insulating layer 12 in the sealing film 100 is not particularly limited, and may be 0.1 cm or more and 5.0 cm or less. Preferably, it is 0.5 cm or more and 2.5 cm or less. By setting the length of the projecting portion 17 within such a range, the projecting portion 17 covers the electrode 3 located on the upper side of the substrate 5 and realizes electrical connection between the projecting portion 17 and the electrode 3. can do.
 [電子部品搭載基板の封止方法]
 次に、上述した第18実施形態の封止用フィルムを用いた電子部品搭載基板の封止方法について説明する。
[Method of sealing electronic component mounting board]
Next, an electronic component mounting substrate sealing method using the sealing film of the eighteenth embodiment described above will be described.
 本実施形態の電子部品搭載基板の封止方法は、基板5と電子部品4とを覆い、かつ、接続部材7に逃げ部27が対応するように、絶縁層12を電子部品搭載基板45側にして封止用フィルム100を電子部品搭載基板45上に配置しつつ、突出部17を、基板5の上面(一方の面)側の電極3に接触させる配置工程と、封止用フィルム100を加熱し軟化させるとともに、減圧する加熱・減圧工程と、封止用フィルム100を冷却させるとともに、加圧することで、突出部17が電極3に接触した状態で、基板5と電子部品4と電極3とを封止用フィルム100で封止する冷却・加圧工程とを有する。 In the sealing method of the electronic component mounting substrate of the present embodiment, the insulating layer 12 is placed on the electronic component mounting substrate 45 side so as to cover the substrate 5 and the electronic component 4 and the escape portion 27 corresponds to the connecting member 7. While placing the sealing film 100 on the electronic component mounting substrate 45, the placement step of bringing the protruding portion 17 into contact with the electrode 3 on the upper surface (one surface) side of the substrate 5, and heating the sealing film 100 The substrate 5, the electronic component 4, and the electrode 3 can be softened and heated while the pressure is reduced, and the sealing film 100 is cooled and pressurized so that the protrusion 17 is in contact with the electrode 3. And a cooling / pressurizing step for sealing with a sealing film 100.
 以下、電子部品搭載基板の封止方法の各工程について、順次説明する。
(配置工程)
 まず、図38(a)に示すように、封止用フィルム100が備える絶縁層12および電磁波シールド層13のうち絶縁層12を、電子部品搭載基板45に対向させた状態で、電子部品搭載基板45が備える基板5と電子部品4と電極3とを覆い、かつ、接続部材7に逃げ部27が対応するように、封止用フィルム100を電子部品搭載基板45上に配置する。
Hereafter, each process of the sealing method of an electronic component mounting substrate is demonstrated sequentially.
(Arrangement process)
First, as shown in FIG. 38 (a), the electronic component mounting board in a state where the insulating layer 12 of the sealing film 100 and the electromagnetic wave shielding layer 13 are opposed to the electronic component mounting board 45. The sealing film 100 is disposed on the electronic component mounting substrate 45 so as to cover the substrate 5, the electronic component 4, and the electrode 3 included in the 45, and so that the escape portion 27 corresponds to the connecting member 7.
 この際、封止用フィルム100の中央部に位置する絶縁層12により電子部品4を被覆させ、絶縁層12の端部を越えて突出する突出部17により電極3を被覆させる(図38(b))。 At this time, the electronic component 4 is covered with the insulating layer 12 located at the center of the sealing film 100, and the electrode 3 is covered with the protruding portion 17 protruding beyond the end of the insulating layer 12 (FIG. 38B). )).
(加熱・減圧工程)
 次に、図38(b)に示す状態を維持したまま、封止用フィルム100を加熱し軟化させるとともに、減圧する。
(Heating and decompression process)
Next, the sealing film 100 is heated and softened while maintaining the state shown in FIG.
 このように、封止用フィルム100を加熱することにより、封止用フィルム100すなわち絶縁層12および電磁波シールド層13が軟化し、その結果、基板5の上面側では、基板5に電子部品4および電極3を搭載することにより形成された凹凸6の形状に対して、追従し得る状態となる。 Thus, by heating the sealing film 100, the sealing film 100, that is, the insulating layer 12 and the electromagnetic wave shielding layer 13 are softened. As a result, on the upper surface side of the substrate 5, the electronic component 4 and It will be in the state which can follow the shape of the unevenness | corrugation 6 formed by mounting the electrode 3. FIG.
 また、この際、電子部品搭載基板45および封止用フィルム100を、減圧雰囲気下に配置することで、封止用フィルム100の外側ばかりでなく、電子部品搭載基板45と封止用フィルム100との間の気体(空気)が脱気される。 At this time, the electronic component mounting substrate 45 and the sealing film 100 are arranged in a reduced-pressure atmosphere, so that not only the outside of the sealing film 100 but also the electronic component mounting substrate 45 and the sealing film 100 The gas (air) in between is degassed.
 これにより、封止用フィルム100が伸展しながら、基板5の上側では、凹凸6の形状、すなわち、基板5上の電子部品4および電極3の形状に若干追従した状態となる。 Thereby, while the sealing film 100 extends, the shape of the unevenness 6, that is, the shape of the electronic component 4 and the electrode 3 on the substrate 5 is slightly followed on the upper side of the substrate 5.
 本工程により、電子部品搭載基板45の上面側に形成された凹凸6の形状に対して、封止用フィルム100を、追従し得る状態とすることができる。 By this step, the sealing film 100 can be made to follow the shape of the irregularities 6 formed on the upper surface side of the electronic component mounting substrate 45.
(冷却・加圧工程)
 次に、図38(c)に示すように、封止用フィルム100を冷却させるとともに、加圧する。
(Cooling / pressurization process)
Next, as shown in FIG. 38C, the sealing film 100 is cooled and pressurized.
 このように、減圧された雰囲気から加圧することで、前記加熱・減圧工程において、電子部品搭載基板45と封止用フィルム100との間が脱気され、減圧状態が維持されていることから、封止用フィルム100がさらに伸展することとなる。 Thus, by pressurizing from the decompressed atmosphere, in the heating and decompression step, the space between the electronic component mounting substrate 45 and the sealing film 100 is degassed, and the decompressed state is maintained. The sealing film 100 is further extended.
 その結果、基板5の上側では、接続部材7が逃げ部27から露出して封止されることなく、凹凸6の形状(電子部品4および電極3の形状)に優れた密着度(気密度)で追従した状態で、軟化した状態の封止用フィルム100により、基板5と電子部品4と電極3とが被覆される。 As a result, on the upper side of the substrate 5, the connection member 7 is not exposed and sealed from the escape portion 27, and the adhesion (air density) excellent in the shape of the unevenness 6 (the shape of the electronic component 4 and the electrode 3). The substrate 5, the electronic component 4, and the electrode 3 are covered with the sealing film 100 in a softened state following the above.
 この際、封止用フィルム100の軟化点における伸び率が150%以上3500%以下となっている。これにより、封止用フィルム100は、この加圧時に、電子部品搭載基板45に形成された凹凸6に対してより優れた形状追従性をもって伸展させることができるため、軟化した状態の封止用フィルム100により、基板5の上側において基板5と電子部品4と電極3とを優れた密着性をもって被覆することができる。 At this time, the elongation at the softening point of the sealing film 100 is 150% or more and 3500% or less. Thereby, since the film 100 for sealing can be extended with the more excellent shape followable | trackability with respect to the unevenness | corrugation 6 formed in the electronic component mounting board | substrate 45 at the time of this pressurization, for the sealing of the softened state With the film 100, the substrate 5, the electronic component 4, and the electrode 3 can be coated on the upper side of the substrate 5 with excellent adhesion.
 そして、封止用フィルム100により、基板5と電子部品4と電極3とを優れた密着性(気密性)をもって被覆し、かつ、接続部材7が逃げ部27から露出した状態で、封止用フィルム100を冷却することで、この状態を維持したまま、封止用フィルム100が固化する。 Then, the sealing film 100 covers the substrate 5, the electronic component 4, and the electrode 3 with excellent adhesion (airtightness), and the connection member 7 is exposed from the escape portion 27. By cooling the film 100, the sealing film 100 is solidified while maintaining this state.
 これにより、電子部品搭載基板45に形成された凹凸6の形状に追従した状態で、封止用フィルム100により、基板5の上側において、絶縁層12が接触して基板5と電子部品4とが被覆され、かつ、接続部材7が逃げ部27から露出し、さらに、電磁波シールド層13が接触して電極3が被覆された封止用フィルム被覆電子部品搭載基板50が得られることとなる。そのため、この封止用フィルム被覆電子部品搭載基板50において、湿気や埃等の外部因子と電子部品4および電極3が接触するのを的確に抑制または防止することができる。したがって、得られる封止用フィルム被覆電子部品搭載基板50ひいてはこの封止用フィルム被覆電子部品搭載基板50を備える電子機器の信頼性の向上が図られる。 Thereby, the insulating layer 12 is brought into contact with the upper side of the substrate 5 by the sealing film 100 in a state following the shape of the unevenness 6 formed on the electronic component mounting substrate 45, so that the substrate 5 and the electronic component 4 are Thus, the sealing film-covered electronic component mounting substrate 50 that is covered and the connection member 7 is exposed from the escape portion 27 and is further in contact with the electromagnetic wave shield layer 13 to cover the electrode 3 is obtained. Therefore, in this film-covered electronic component mounting substrate 50 for sealing, it is possible to accurately suppress or prevent the external component such as moisture and dust from contacting the electronic component 4 and the electrode 3. Accordingly, the reliability of the obtained electronic device including the sealing film-covered electronic component mounting substrate 50 and thus the sealing film-covered electronic component mounting substrate 50 can be improved.
 また、上記のように、得られた封止用フィルム被覆電子部品搭載基板50において、接続部材7が逃げ部27から露出しているため、電子部品搭載基板45と他の電子部品や電源との電気的な接続を実現することができる。 Further, as described above, in the obtained sealing film-covered electronic component mounting board 50, since the connecting member 7 is exposed from the escape portion 27, the electronic component mounting board 45 and other electronic components or power supply are not connected. An electrical connection can be realized.
 また、上記のような電子部品搭載基板45の被覆に用いられる封止用フィルム100は、絶縁層12および電磁波シールド層13の積層体で構成されるが、電磁波シールド層13は、その端部において、絶縁層12の端部を越えて突出することで形成された突出部17を備えている。そして、本実施形態では、この突出部17が、絶縁層12を介することなく、電極3を直接被覆する。これにより、導電性を有する突出部17(電磁波シールド層13)に電極3が電気的に接続されるため、得られる封止用フィルム被覆電子部品搭載基板50において、この突出部17を介した電極3と外部との電気的な接続を確保することが可能となる。 Further, the sealing film 100 used for covering the electronic component mounting substrate 45 as described above is composed of a laminate of the insulating layer 12 and the electromagnetic wave shielding layer 13, and the electromagnetic wave shielding layer 13 is formed at the end thereof. , And a protruding portion 17 formed by protruding beyond the end portion of the insulating layer 12. In the present embodiment, the protruding portion 17 directly covers the electrode 3 without the insulating layer 12 interposed therebetween. Thereby, since the electrode 3 is electrically connected to the projecting portion 17 (electromagnetic wave shield layer 13) having conductivity, in the obtained film-covered electronic component mounting substrate 50 for sealing, the electrode via the projecting portion 17 is used. 3 and the outside can be secured.
 上記の工程を経ることで、封止用フィルム100により、基板5と電子部品4と電極3とが被覆され、かつ、接続部材7が逃げ部27から露出した封止用フィルム被覆電子部品搭載基板50を得ることができる。 Through the above steps, the substrate 5, the electronic component 4, and the electrode 3 are covered with the sealing film 100 and the connecting member 7 is exposed from the escape portion 27. 50 can be obtained.
 <第19実施形態>
 [封止用フィルム]
 次に、本発明の封止用フィルム100の第19実施形態について説明する。
<Nineteenth embodiment>
[Sealing film]
Next, a nineteenth embodiment of the sealing film 100 of the present invention will be described.
 図39は、本発明の封止用フィルムの第19実施形態を示す図((a)縦断面図、(b)平面図)、図40(a)~(c)は、図39に示す封止用フィルムを用いて電子部品搭載基板の封止方法を説明するための縦断面図である。なお、以下の説明では、説明の便宜上、図39、図40中の上側を「上」、下側を「下」と言う。 FIG. 39 is a view showing a nineteenth embodiment of the sealing film of the present invention ((a) longitudinal sectional view, (b) plan view), and FIGS. 40 (a) to (c) are the seals shown in FIG. It is a longitudinal cross-sectional view for demonstrating the sealing method of an electronic component mounting board | substrate using a film for a stop. In the following description, for convenience of description, the upper side in FIGS. 39 and 40 is referred to as “upper” and the lower side is referred to as “lower”.
 以下、第19実施形態について説明するが、前記第12実施形態と異なる点を中心に説明し、同様の事項についてはその説明を省略する。 Hereinafter, the nineteenth embodiment will be described, but the points different from the twelfth embodiment will be mainly described, and description of similar matters will be omitted.
 第19実施形態では、封止用フィルム100が備える電磁波シールド層13および被覆層14の構成が異なり、さらに、この封止用フィルム100を用いて被覆する電子部品搭載基板45の構成が異なること以外は、前記第12実施形態と同様である。 In the nineteenth embodiment, the configurations of the electromagnetic wave shielding layer 13 and the covering layer 14 included in the sealing film 100 are different, and further, the configuration of the electronic component mounting substrate 45 covered using the sealing film 100 is different. Is the same as in the twelfth embodiment.
 第19実施形態の封止用フィルム100において、電磁波シールド層13および被覆層14は、図39、図40に示すように、絶縁層12よりも大きく形成されている。これにより、電磁波シールド層13および被覆層14のうち絶縁層12側に位置する電磁波シールド層13の端部が絶縁層12の端部(縁部)から露出している。換言すれば、電磁波シールド層13が、絶縁層12の端部を越えて突出することで形成された突出部17(第2突出部)を備えている。 In the sealing film 100 of the nineteenth embodiment, the electromagnetic wave shielding layer 13 and the covering layer 14 are formed larger than the insulating layer 12 as shown in FIGS. Thereby, the edge part of the electromagnetic wave shielding layer 13 located in the insulating layer 12 side among the electromagnetic wave shielding layer 13 and the coating layer 14 is exposed from the edge part (edge part) of the insulating layer 12. In other words, the electromagnetic wave shielding layer 13 includes the protruding portion 17 (second protruding portion) formed by protruding beyond the end portion of the insulating layer 12.
 また、第19実施形態の封止用フィルム100により被覆される電子部品搭載基板45は、図40に示すように、基板5と、基板5の上面(一方の面)側の中央部に搭載(載置)された電子部品4と、この電子部品4に電気的に接続され、基板5の上面(一方の面)側の端部52に形成された接続部材7、および、基板5の下面(他方の面)側の端部51に形成された電極3とを備えている。このような電子部品搭載基板45において、基板5の上面への電子部品4の搭載により、基板5上に凸部61と凹部62とからなる凹凸6が形成される。 Moreover, the electronic component mounting substrate 45 covered with the sealing film 100 of the nineteenth embodiment is mounted on the substrate 5 and the central portion on the upper surface (one surface) side of the substrate 5 (see FIG. 40). The electronic component 4 that is placed, the connection member 7 that is electrically connected to the electronic component 4 and is formed at the end 52 on the upper surface (one surface) side of the substrate 5, and the lower surface ( And the electrode 3 formed at the end 51 on the other surface side. In such an electronic component mounting substrate 45, the mounting of the electronic component 4 on the upper surface of the substrate 5 forms the unevenness 6 including the convex portions 61 and the concave portions 62 on the substrate 5.
 このように電子部品4および接続部材7が上面側に搭載され、電極3が下面側に搭載された電子部品搭載基板45に対して、絶縁層12を下側とし、被覆層14を上側にして、封止用フィルム100を用いて被覆すると、接続部材7が逃げ部27から露出して封止されることなく、電子部品4は、絶縁層12を介して電磁波シールド層13で封止される。 Thus, with respect to the electronic component mounting substrate 45 on which the electronic component 4 and the connecting member 7 are mounted on the upper surface side and the electrode 3 is mounted on the lower surface side, the insulating layer 12 is on the lower side and the covering layer 14 is on the upper side. When the sealing film 100 is used for covering, the electronic component 4 is sealed with the electromagnetic wave shielding layer 13 through the insulating layer 12 without the connecting member 7 being exposed and sealed from the escape portion 27. .
 さらに、本実施形態では、この封止用フィルム100を用いた被覆の際に、電磁波シールド層13が備える突出部17は、基板5の下面側に折り込むことが可能なように構成されている。そのため、基板5の下面の端部51に形成された電極3に、この突出部17を接触させた状態とすることができる。したがって、この突出部17は、電磁波シールド層13で構成され導電性を有することから、得られた封止用フィルム被覆電子部品搭載基板50おいて、この電磁波シールド層13を介した電極3と外部との電気的な接続を確保することができる。なお、本実施形態では、電磁波シールド層13の上面のほぼ全面には被覆層14が形成されていることから、電磁波シールド層13を介した電極3と外部との電気的な接続を確保する場合には、被覆層14の一部を除去して電磁波シールド層13が露出する露出部を形成し、この露出部において、電磁波シールド層13と外部とを電気的に接続することで、この接続が実現される。 Furthermore, in the present embodiment, the projecting portion 17 provided in the electromagnetic wave shielding layer 13 is configured to be able to be folded to the lower surface side of the substrate 5 when the sealing film 100 is used for coating. Therefore, the protruding portion 17 can be brought into contact with the electrode 3 formed on the end portion 51 on the lower surface of the substrate 5. Therefore, since the protrusion 17 is composed of the electromagnetic wave shielding layer 13 and has conductivity, in the obtained film-covered electronic component mounting substrate 50 for sealing, the electrode 3 and the outside through the electromagnetic wave shielding layer 13 are provided. Can be secured. In the present embodiment, since the coating layer 14 is formed on almost the entire upper surface of the electromagnetic wave shielding layer 13, the electrical connection between the electrode 3 and the outside via the electromagnetic wave shielding layer 13 is ensured. Is formed by removing a part of the coating layer 14 to form an exposed portion where the electromagnetic wave shielding layer 13 is exposed, and electrically connecting the electromagnetic wave shielding layer 13 and the outside at the exposed portion. Realized.
 また、前記第1実施形態と同様に、前記軟化点における伸び率は、150%以上3500%以下である。これにより、基板5の上面側から下面側へ突出部17を折りこませることで、端部51に設けられた電極3を被覆する際に、突出部17が屈曲した屈曲部において破断してしまうのを的確に抑制または防止することができる。 Further, as in the first embodiment, the elongation at the softening point is 150% or more and 3500% or less. Thereby, when the protrusion 17 is folded from the upper surface side to the lower surface side of the substrate 5, when the electrode 3 provided on the end portion 51 is covered, the bent portion is broken at the bent portion. Can be accurately suppressed or prevented.
 さらに、前記第1実施形態と同様に、封止用フィルム100の25℃以上80℃以下の温度範囲での線膨張率は、100ppm/K以下であることが好ましい。このように、封止用フィルム100の線膨張率を規定することによっても、基板5の上面側から下面側への突出部17の折り込みを、突出部17を屈曲させる屈曲部において破断を生じさせることなく確実に実施させることができる。 Furthermore, as in the first embodiment, the linear expansion coefficient in the temperature range of 25 ° C. to 80 ° C. of the sealing film 100 is preferably 100 ppm / K or less. Thus, by defining the linear expansion coefficient of the sealing film 100, the folding of the protruding portion 17 from the upper surface side to the lower surface side of the substrate 5 is caused to break at the bent portion that bends the protruding portion 17. It can be surely implemented without any problems.
 また、封止用フィルム100における、絶縁層12の端部を越えて突出する電磁波シールド層13の突出部17の長さは、特に限定されず、0.5cm以上8.0cm以下であることが好ましく、1.0cm以上5.0cm以下であることがより好ましい。突出部17の長さをかかる範囲内に設定することにより、突出部17を、基板5の上面側から下面側に折り込みつつ、基板5の下面における端部51に形成された電極3にまで到達させることができるため、突出部17による電極3の電気的な接続を確実に実現させることができる。 In addition, the length of the protruding portion 17 of the electromagnetic wave shielding layer 13 protruding beyond the end portion of the insulating layer 12 in the sealing film 100 is not particularly limited, and may be 0.5 cm or more and 8.0 cm or less. Preferably, it is 1.0 cm or more and 5.0 cm or less. By setting the length of the projecting portion 17 within such a range, the projecting portion 17 reaches the electrode 3 formed on the end portion 51 on the lower surface of the substrate 5 while folding the projecting portion 17 from the upper surface side to the lower surface side of the substrate 5. Therefore, the electrical connection of the electrode 3 by the protrusion 17 can be reliably realized.
 [電子部品搭載基板の封止方法]
 次に、本実施形態の封止用フィルムを用いた電子部品搭載基板の封止方法について説明する。
[Method of sealing electronic component mounting board]
Next, a method for sealing an electronic component mounting substrate using the sealing film of this embodiment will be described.
 本実施形態の電子部品搭載基板の封止方法は、基板5と電子部品4とを覆い、かつ、接続部材7に逃げ部27が対応するように、絶縁層12を電子部品搭載基板45側にして封止用フィルム100を電子部品搭載基板45上に配置しつつ、突出部17を、基板5の下面(他方の面)側に折り込むことにより電極3に接触させる配置工程と、封止用フィルム100を加熱し軟化させるとともに、減圧する加熱・減圧工程と、封止用フィルム100を冷却させるとともに、加圧することで、突出部17が電極3に接触した状態で、基板5と電子部品4とを封止用フィルム100で封止する冷却・加圧工程とを有する。 In the sealing method of the electronic component mounting substrate of the present embodiment, the insulating layer 12 is placed on the electronic component mounting substrate 45 side so as to cover the substrate 5 and the electronic component 4 and the escape portion 27 corresponds to the connecting member 7. The disposing step of contacting the electrode 3 by folding the protrusion 17 on the lower surface (the other surface) side of the substrate 5 while disposing the sealing film 100 on the electronic component mounting substrate 45, and the sealing film Heating / depressurizing step for heating and softening 100, and cooling and sealing film 100 for sealing, pressurizing part 17 in contact with electrode 3 in a state where projecting part 17 is in contact with electrode 3 And a cooling / pressurizing step for sealing with a sealing film 100.
 以下、電子部品搭載基板の封止方法の各工程について、順次説明する。
(配置工程)
 まず、図40(a)に示すように、封止用フィルム100が備える絶縁層12、電磁波シールド層13および被覆層14のうち絶縁層12を、電子部品搭載基板45に対向させた状態で、電子部品搭載基板45が備える基板5と電子部品4とを覆い、かつ、接続部材7に逃げ部27が対応するように、封止用フィルム100を電子部品搭載基板45上に配置する。
Hereafter, each process of the sealing method of an electronic component mounting substrate is demonstrated sequentially.
(Arrangement process)
First, as shown in FIG. 40A, in the state where the insulating layer 12 of the insulating film 12, the electromagnetic wave shielding layer 13 and the coating layer 14 included in the sealing film 100 is opposed to the electronic component mounting substrate 45, The sealing film 100 is disposed on the electronic component mounting substrate 45 so as to cover the substrate 5 and the electronic component 4 included in the electronic component mounting substrate 45 and so that the escape portion 27 corresponds to the connection member 7.
 そして、この際、絶縁層12の端部を越えて突出する突出部17を、基板5の下面側に折り込み、これにより、突出部17を電極3に接触させる(図40(b))。 At this time, the protruding portion 17 protruding beyond the end portion of the insulating layer 12 is folded to the lower surface side of the substrate 5, thereby bringing the protruding portion 17 into contact with the electrode 3 (FIG. 40B).
(加熱・減圧工程)
 次に、図40(b)に示す状態を維持したまま、封止用フィルム100を加熱し軟化させるとともに、減圧する。
(Heating and decompression process)
Next, the sealing film 100 is heated and softened while maintaining the state shown in FIG.
 このように、封止用フィルム100を加熱することにより、封止用フィルム100すなわち絶縁層12、電磁波シールド層13および被覆層14が軟化し、その結果、基板5の上面側では、基板5に電子部品4を搭載することにより形成された凹凸6の形状に対して、追従し得る状態となり、さらに、基板5の下面側では、基板5の下面の端部51に設けられた電極3の形状に対して、追従し得る状態となる。 Thus, by heating the sealing film 100, the sealing film 100, that is, the insulating layer 12, the electromagnetic wave shielding layer 13, and the coating layer 14 are softened. As a result, on the upper surface side of the substrate 5, The shape of the unevenness 6 formed by mounting the electronic component 4 can be followed, and on the lower surface side of the substrate 5, the shape of the electrode 3 provided at the end 51 on the lower surface of the substrate 5. It will be in the state which can track.
 また、この際、電子部品搭載基板45および封止用フィルム100を、減圧雰囲気下に配置することで、封止用フィルム100の外側ばかりでなく、電子部品搭載基板45と封止用フィルム100との間の気体(空気)が脱気される。 At this time, the electronic component mounting substrate 45 and the sealing film 100 are arranged in a reduced-pressure atmosphere, so that not only the outside of the sealing film 100 but also the electronic component mounting substrate 45 and the sealing film 100 The gas (air) in between is degassed.
 これにより、封止用フィルム100が伸展しながら、基板5の上面側では、凹凸6の形状、すなわち、基板5上の電子部品4の形状に若干追従した状態となり、基板5の下面側では、電極3の形状に若干追従した状態となる。 Thereby, while the sealing film 100 extends, the shape of the unevenness 6 on the upper surface side of the substrate 5, that is, the shape of the electronic component 4 on the substrate 5 is slightly followed, and on the lower surface side of the substrate 5, The state slightly follows the shape of the electrode 3.
 本工程により、電子部品搭載基板45の上面側に形成された凹凸6の形状、および、下面側に形成された電極3の形状に対して、封止用フィルム100を、追従し得る状態とすることができる。 By this step, the sealing film 100 can follow the shape of the irregularities 6 formed on the upper surface side of the electronic component mounting substrate 45 and the shape of the electrodes 3 formed on the lower surface side. be able to.
(冷却・加圧工程)
 次に、図40(c)に示すように、封止用フィルム100を冷却させるとともに、加圧する。
(Cooling / pressurization process)
Next, as shown in FIG. 40C, the sealing film 100 is cooled and pressurized.
 このように、減圧された雰囲気から加圧することで、前記加熱・減圧工程において、電子部品搭載基板45と封止用フィルム100との間が脱気され、減圧状態が維持されていることから、封止用フィルム100がさらに伸展することとなる。 Thus, by pressurizing from the decompressed atmosphere, in the heating and decompression step, the space between the electronic component mounting substrate 45 and the sealing film 100 is degassed, and the decompressed state is maintained. The sealing film 100 is further extended.
 その結果、基板5の上面側では、接続部材7が逃げ部27から露出して封止されることなく、凹凸6の形状(電子部品4の形状)、さらに、基板5の下面側では電極3の形状に優れた密着度(気密度)で追従した状態で、軟化した状態の封止用フィルム100により、基板5と電子部品4と電極3とが被覆される。 As a result, the connection member 7 is not exposed and sealed from the escape portion 27 on the upper surface side of the substrate 5, and the shape of the unevenness 6 (the shape of the electronic component 4), and the electrode 3 on the lower surface side of the substrate 5. The substrate 5, the electronic component 4, and the electrode 3 are covered with the sealing film 100 in a softened state in a state of following with an excellent adhesion degree (air density).
 この際、封止用フィルム100の軟化点における伸び率が150%以上3500%以下となっている。これにより、封止用フィルム100は、この加圧時に、電子部品搭載基板45に形成された凹凸6および電極3に対してより優れた形状追従性をもって伸展させることができるため、軟化した状態の封止用フィルム100により、基板5の上面側において基板5と電子部品4とを、さらには基板5の下面側においては電極3を優れた密着性をもって被覆することができる。また、基板5の上面側から下面側へ突出部17を折りこませることで電極3に接触させる際に、突出部17が屈曲した屈曲部において破断してしまうのを的確に抑制または防止することができる。 At this time, the elongation at the softening point of the sealing film 100 is 150% or more and 3500% or less. Thereby, since the film 100 for sealing can be extended with the more excellent shape followability with respect to the unevenness | corrugation 6 and the electrode 3 which were formed in the electronic component mounting board | substrate 45 at the time of this pressurization, the state of the softened state The sealing film 100 can cover the substrate 5 and the electronic component 4 on the upper surface side of the substrate 5 and the electrode 3 on the lower surface side of the substrate 5 with excellent adhesion. Further, when the protruding portion 17 is folded from the upper surface side to the lower surface side of the substrate 5 to be brought into contact with the electrode 3, it is possible to accurately suppress or prevent the protruding portion 17 from being broken at the bent portion. Can do.
 そして、封止用フィルム100により、基板5と電子部品4とを、さらには電極3を優れた密着性(気密性)をもって被覆し、かつ、接続部材7が逃げ部27から露出した状態で、封止用フィルム100を冷却することで、この状態を維持したまま、封止用フィルム100が固化する。 Then, with the sealing film 100, the substrate 5 and the electronic component 4 are further covered with excellent adhesion (air tightness) with the electrode 3, and the connection member 7 is exposed from the escape portion 27. By cooling the sealing film 100, the sealing film 100 is solidified while maintaining this state.
 これにより、電子部品搭載基板45に形成された凹凸6の形状に追従した状態で、封止用フィルム100により、基板5の上面側において絶縁層12が接触して基板5と電子部品4とが被覆され、かつ、接続部材7が逃げ部27から露出し、さらに、基板5の下面側において電磁波シールド層13が接触して電極3が被覆された封止用フィルム被覆電子部品搭載基板50が得られることとなる。そのため、この封止用フィルム被覆電子部品搭載基板50において、湿気や埃等の外部因子と電子部品4および電極3が接触するのをより的確に抑制または防止することができる。したがって、得られる封止用フィルム被覆電子部品搭載基板50ひいてはこの封止用フィルム被覆電子部品搭載基板50を備える電子機器のより信頼性の向上が図られる。 Thereby, the insulating layer 12 is brought into contact with the upper surface side of the substrate 5 by the sealing film 100 in a state following the shape of the unevenness 6 formed on the electronic component mounting substrate 45, so that the substrate 5 and the electronic component 4 are The sealing film-covered electronic component mounting substrate 50 is obtained, which is covered and the connection member 7 is exposed from the escape portion 27 and the electromagnetic wave shielding layer 13 is in contact with the lower surface side of the substrate 5 to cover the electrode 3. Will be. Therefore, in the sealing film-covered electronic component mounting substrate 50, it is possible to more accurately suppress or prevent the external component such as moisture and dust from contacting the electronic component 4 and the electrode 3. Therefore, the reliability of the obtained electronic device including the sealing film-covered electronic component mounting substrate 50 and thus the sealing film-covered electronic component mounting substrate 50 can be improved.
 また、上記のように、得られた封止用フィルム被覆電子部品搭載基板50において、接続部材7が逃げ部27から露出しているため、電子部品搭載基板45と他の電子部品や電源との電気的な接続を実現することができる。 Further, as described above, in the obtained sealing film-covered electronic component mounting board 50, since the connecting member 7 is exposed from the escape portion 27, the electronic component mounting board 45 and other electronic components or power supply are not connected. An electrical connection can be realized.
 また、上記のような電子部品搭載基板45の被覆に用いられる封止用フィルム100は、絶縁層12、電磁波シールド層13および被覆層14の積層体で構成されるが、電磁波シールド層13は、絶縁層12よりも大きく形成され、その中央部において絶縁層12が積層されるが、端部において、絶縁層12の端部を越えて突出することで形成された突出部17を備えている。そして、この突出部17が、基板5の下面側に折り込まれることで電極3を直接被覆する。これにより、電極3が突出部17(電磁波シールド層13)に電気的に接続されるため、得られる封止用フィルム被覆電子部品搭載基板50において、この突出部17を介した電極3と外部との電気的な接続を確保することが可能となる。 Further, the sealing film 100 used for covering the electronic component mounting substrate 45 as described above is composed of a laminate of the insulating layer 12, the electromagnetic wave shielding layer 13, and the covering layer 14, but the electromagnetic wave shielding layer 13 is The insulating layer 12 is formed so as to be larger than the insulating layer 12, and the insulating layer 12 is laminated at the center portion thereof, but at the end portion, the protruding portion 17 formed by protruding beyond the end portion of the insulating layer 12 is provided. Then, the protruding portion 17 is folded on the lower surface side of the substrate 5 to directly cover the electrode 3. Thereby, since the electrode 3 is electrically connected to the protrusion 17 (electromagnetic wave shield layer 13), in the obtained film-covered electronic component mounting substrate 50 for sealing, the electrode 3 and the outside through the protrusion 17 It is possible to ensure electrical connection.
 上記の工程を経ることで、封止用フィルム100により、基板5と電子部品4と電極3とが被覆され、かつ、接続部材7が逃げ部27から露出した封止用フィルム被覆電子部品搭載基板50を得ることができる。 Through the above steps, the substrate 5, the electronic component 4, and the electrode 3 are covered with the sealing film 100 and the connecting member 7 is exposed from the escape portion 27. 50 can be obtained.
 <<第20実施形態>>
 次に、本発明の封止用フィルム100の第20実施形態について説明する。
<< 20th Embodiment >>
Next, a twentieth embodiment of the sealing film 100 of the present invention will be described.
 図41は、本発明の封止用フィルムの第20実施形態を示す図((a)縦断面図、(b)平面図)、図42(a)~(c)は、図41に示す封止用フィルムを用いて電子部品搭載基板の封止方法を説明するための縦断面図である。なお、以下の説明では、説明の便宜上、図41、図42中の上側を「上」、下側を「下」と言う。 41 is a view showing a twentieth embodiment of a sealing film of the present invention ((a) longitudinal sectional view, (b) plan view), and FIGS. 42 (a) to (c) are views showing the sealing shown in FIG. It is a longitudinal cross-sectional view for demonstrating the sealing method of an electronic component mounting board | substrate using a film for a stop. In the following description, for convenience of description, the upper side in FIGS. 41 and 42 is referred to as “upper” and the lower side is referred to as “lower”.
 以下、第20実施形態について説明するが、前記第12実施形態と異なる点を中心に説明し、同様の事項についてはその説明を省略する。 Hereinafter, the twentieth embodiment will be described, but the description will focus on the differences from the twelfth embodiment, and description of similar matters will be omitted.
 第20実施形態では、封止用フィルム100が備える電磁波シールド層13の構成が異なり、さらに、被覆層14の形成が省略されているとともに、この封止用フィルム100を用いて被覆する電子部品搭載基板45の構成が異なること以外は、前記第12実施形態と同様である。 In the twentieth embodiment, the configuration of the electromagnetic wave shielding layer 13 included in the sealing film 100 is different, and further, the formation of the coating layer 14 is omitted, and the electronic component mounting to be coated using the sealing film 100 is performed. The substrate 45 is the same as the twelfth embodiment except that the configuration of the substrate 45 is different.
 第20実施形態の封止用フィルム100において、電磁波シールド層13は、図41、図42に示すように、絶縁層12よりも大きく形成されている。これにより、電磁波シールド層13の端部が絶縁層12の端部(縁部)から露出すること、換言すれば、絶縁層12の端部を越えて突出することで形成された突出部17(第2突出部)を備えている。 In the sealing film 100 of the twentieth embodiment, the electromagnetic wave shielding layer 13 is formed larger than the insulating layer 12 as shown in FIGS. Thus, the end portion of the electromagnetic wave shielding layer 13 is exposed from the end portion (edge portion) of the insulating layer 12, in other words, the protruding portion 17 (formed by protruding beyond the end portion of the insulating layer 12 ( 2nd protrusion part) is provided.
 また、第20実施形態の封止用フィルム100により被覆される電子部品搭載基板45は、図42に示すように、基板5と、基板5の上面(一方の面)側の中央部に搭載(載置)された電子部品4と、この電子部品4に電気的に接続され、基板5の上面(一方の面)側の端部52に形成された接続部材7、および、基板5の下面(他方の面)側の端部51に形成された電極3とを備えている。このような電子部品搭載基板45において、基板5の上面への電子部品4の搭載により、基板5上に凸部61と凹部62とからなる凹凸6が形成される。 Moreover, the electronic component mounting substrate 45 covered with the sealing film 100 of the twentieth embodiment is mounted on the substrate 5 and the central portion on the upper surface (one surface) side of the substrate 5, as shown in FIG. The electronic component 4 that is placed, the connection member 7 that is electrically connected to the electronic component 4 and is formed at the end 52 on the upper surface (one surface) side of the substrate 5, and the lower surface ( And the electrode 3 formed at the end 51 on the other surface side. In such an electronic component mounting substrate 45, the mounting of the electronic component 4 on the upper surface of the substrate 5 forms the unevenness 6 including the convex portions 61 and the concave portions 62 on the substrate 5.
 このように電子部品4および接続部材7が上面側に搭載され、電極3が下面側に搭載された電子部品搭載基板45に対して、絶縁層12を下側とし、電磁波シールド層13を上側にして、封止用フィルム100を用いて被覆すると、接続部材7が逃げ部27から露出して封止されることなく、電子部品4は、絶縁層12を介して電磁波シールド層13で封止される。 Thus, with respect to the electronic component mounting substrate 45 on which the electronic component 4 and the connection member 7 are mounted on the upper surface side and the electrode 3 is mounted on the lower surface side, the insulating layer 12 is on the lower side and the electromagnetic wave shielding layer 13 is on the upper side. Then, when the sealing film 100 is used for covering, the electronic component 4 is sealed with the electromagnetic wave shielding layer 13 through the insulating layer 12 without the connecting member 7 being exposed and sealed from the escape portion 27. The
 さらに、本実施形態では、この封止用フィルム100を用いた被覆の際に、電磁波シールド層13が備える突出部17は、基板5の下面側に折り込むことが可能なように構成されている。そのため、基板5の下面の端部51に形成された電極3に、この突出部17を接触させた状態とすることができる。したがって、この突出部17は、電磁波シールド層13で構成され導電性を有することから、得られた封止用フィルム被覆電子部品搭載基板50おいて、この電磁波シールド層13を介した電極3と外部との電気的な接続を確保することができる。 Furthermore, in the present embodiment, the projecting portion 17 provided in the electromagnetic wave shielding layer 13 is configured to be able to be folded to the lower surface side of the substrate 5 when the sealing film 100 is used for coating. Therefore, the protruding portion 17 can be brought into contact with the electrode 3 formed on the end portion 51 on the lower surface of the substrate 5. Therefore, since the protrusion 17 is composed of the electromagnetic wave shielding layer 13 and has conductivity, in the obtained film-covered electronic component mounting substrate 50 for sealing, the electrode 3 and the outside through the electromagnetic wave shielding layer 13 are provided. Can be secured.
 また、前記第1実施形態と同様に、前記軟化点における伸び率は、150%以上3500%以下である。これにより、基板5の上面側から下面側へ突出部17を折りこませることで、端部51に設けられた電極3を被覆する際に、突出部17が屈曲した屈曲部において破断してしまうのを的確に抑制または防止することができる。 Further, as in the first embodiment, the elongation at the softening point is 150% or more and 3500% or less. Thereby, when the protrusion 17 is folded from the upper surface side to the lower surface side of the substrate 5, when the electrode 3 provided on the end portion 51 is covered, the bent portion is broken at the bent portion. Can be accurately suppressed or prevented.
 さらに、前記第1実施形態と同様に、封止用フィルム100の25℃以上80℃以下の温度範囲での線膨張率は、100ppm/K以下であることが好ましい。このように、封止用フィルム100の線膨張率を規定することによっても、基板5の上面側から下面側への突出部17の折り込みを、突出部17を屈曲させる屈曲部において破断を生じさせることなく確実に実施させることができる。 Furthermore, as in the first embodiment, the linear expansion coefficient in the temperature range of 25 ° C. to 80 ° C. of the sealing film 100 is preferably 100 ppm / K or less. Thus, by defining the linear expansion coefficient of the sealing film 100, the folding of the protruding portion 17 from the upper surface side to the lower surface side of the substrate 5 is caused to break at the bent portion that bends the protruding portion 17. It can be surely implemented without any problems.
 また、封止用フィルム100における、絶縁層12の端部を越えて突出する電磁波シールド層13の突出部17の長さは、特に限定されず、0.5cm以上8.0cm以下であることが好ましく、1.0cm以上5.0cm以下であることがより好ましい。突出部17の長さをかかる範囲内に設定することにより、突出部17を、基板5の上面側から下面側に折り込みつつ、基板5の下面における端部51に形成された電極3にまで到達させることができるため、突出部17による電極3の電気的な接続を確実に実現させることができる。 In addition, the length of the protruding portion 17 of the electromagnetic wave shielding layer 13 protruding beyond the end portion of the insulating layer 12 in the sealing film 100 is not particularly limited, and may be 0.5 cm or more and 8.0 cm or less. Preferably, it is 1.0 cm or more and 5.0 cm or less. By setting the length of the projecting portion 17 within such a range, the projecting portion 17 reaches the electrode 3 formed on the end portion 51 on the lower surface of the substrate 5 while folding the projecting portion 17 from the upper surface side to the lower surface side of the substrate 5. Therefore, the electrical connection of the electrode 3 by the protrusion 17 can be reliably realized.
 [電子部品搭載基板の封止方法]
 次に、本実施形態の封止用フィルムを用いた電子部品搭載基板の封止方法について説明する。
[Method of sealing electronic component mounting board]
Next, a method for sealing an electronic component mounting substrate using the sealing film of this embodiment will be described.
 本実施形態の電子部品搭載基板の封止方法は、基板5と電子部品4とを覆い、かつ、接続部材7に逃げ部27が対応するように、絶縁層12を電子部品搭載基板45側にして封止用フィルム100を電子部品搭載基板45上に配置しつつ、突出部17を、基板5の下面(他方の面)側に折り込むことにより電極3に接触させる配置工程と、封止用フィルム100を加熱し軟化させるとともに、減圧する加熱・減圧工程と、封止用フィルム100を冷却させるとともに、加圧することで、突出部17が電極3に接触した状態で、基板5と電子部品4とを封止用フィルム100で封止する冷却・加圧工程とを有する。 In the sealing method of the electronic component mounting substrate of the present embodiment, the insulating layer 12 is placed on the electronic component mounting substrate 45 side so as to cover the substrate 5 and the electronic component 4 and the escape portion 27 corresponds to the connecting member 7. The disposing step of contacting the electrode 3 by folding the protrusion 17 on the lower surface (the other surface) side of the substrate 5 while disposing the sealing film 100 on the electronic component mounting substrate 45, and the sealing film Heating / depressurizing step for heating and softening 100, and cooling and sealing film 100 for sealing, pressurizing part 17 in contact with electrode 3 in a state where projecting part 17 is in contact with electrode 3 And a cooling / pressurizing step for sealing with a sealing film 100.
 以下、電子部品搭載基板の封止方法の各工程について、順次説明する。
(配置工程)
 まず、図42(a)に示すように、封止用フィルム100が備える絶縁層12および電磁波シールド層13のうち絶縁層12を、電子部品搭載基板45に対向させた状態で、電子部品搭載基板45が備える基板5と電子部品4とを覆い、かつ、接続部材7に逃げ部27が対応するように、封止用フィルム100を電子部品搭載基板45上に配置する。
 そして、この際、絶縁層12の端部を越えて突出する突出部17を、基板5の下面側に折り込み、これにより、突出部17を電極3に接触させる(図42(b))。
Hereafter, each process of the sealing method of an electronic component mounting substrate is demonstrated sequentially.
(Arrangement process)
First, as shown in FIG. 42 (a), the electronic component mounting board in the state where the insulating layer 12 of the insulating film 12 and the electromagnetic wave shielding layer 13 included in the sealing film 100 is opposed to the electronic component mounting board 45. The sealing film 100 is disposed on the electronic component mounting substrate 45 so as to cover the substrate 5 and the electronic component 4 included in the 45 and so that the escape portion 27 corresponds to the connecting member 7.
At this time, the protruding portion 17 protruding beyond the end portion of the insulating layer 12 is folded to the lower surface side of the substrate 5, thereby bringing the protruding portion 17 into contact with the electrode 3 (FIG. 42B).
(加熱・減圧工程)
 次に、図42(b)に示す状態を維持したまま、封止用フィルム100を加熱し軟化させるとともに、減圧する。
(Heating and decompression process)
Next, the sealing film 100 is heated and softened while maintaining the state shown in FIG.
 このように、封止用フィルム100を加熱することにより、封止用フィルム100すなわち絶縁層12および電磁波シールド層13が軟化し、その結果、基板5の上面側では、基板5に電子部品4を搭載することにより形成された凹凸6の形状に対して、追従し得る状態となり、さらに、基板5の下面側では、基板5の下面の端部51に設けられた電極3の形状に対して、追従し得る状態となる。 Thus, by heating the sealing film 100, the sealing film 100, that is, the insulating layer 12 and the electromagnetic wave shielding layer 13 are softened. As a result, the electronic component 4 is attached to the substrate 5 on the upper surface side of the substrate 5. It becomes a state that can follow the shape of the irregularities 6 formed by mounting, and on the lower surface side of the substrate 5, with respect to the shape of the electrode 3 provided on the end portion 51 of the lower surface of the substrate 5, It will be in a state where it can follow.
 また、この際、電子部品搭載基板45および封止用フィルム100を、減圧雰囲気下に配置することで、封止用フィルム100の外側ばかりでなく、電子部品搭載基板45と封止用フィルム100との間の気体(空気)が脱気される。 At this time, the electronic component mounting substrate 45 and the sealing film 100 are arranged in a reduced-pressure atmosphere, so that not only the outside of the sealing film 100 but also the electronic component mounting substrate 45 and the sealing film 100 The gas (air) in between is degassed.
 これにより、封止用フィルム100が伸展しながら、基板5の上面側では、凹凸6の形状、すなわち、基板5上の電子部品4の形状に若干追従した状態となり、基板5の下面側では、電極3の形状に若干追従した状態となる。 Thereby, while the sealing film 100 extends, the shape of the unevenness 6 on the upper surface side of the substrate 5, that is, the shape of the electronic component 4 on the substrate 5 is slightly followed, and on the lower surface side of the substrate 5, The state slightly follows the shape of the electrode 3.
 本工程により、電子部品搭載基板45の上面側に形成された凹凸6の形状、および、下面側に形成された電極3の形状に対して、封止用フィルム100を、追従し得る状態とすることができる。 By this step, the sealing film 100 can follow the shape of the irregularities 6 formed on the upper surface side of the electronic component mounting substrate 45 and the shape of the electrodes 3 formed on the lower surface side. be able to.
(冷却・加圧工程)
 次に、図42(c)に示すように、封止用フィルム100を冷却させるとともに、加圧する。
(Cooling / pressurization process)
Next, as shown in FIG. 42C, the sealing film 100 is cooled and pressurized.
 このように、減圧された雰囲気から加圧することで、前記加熱・減圧工程において、電子部品搭載基板45と封止用フィルム100との間が脱気され、減圧状態が維持されていることから、封止用フィルム100がさらに伸展することとなる。 Thus, by pressurizing from the decompressed atmosphere, in the heating and decompression step, the space between the electronic component mounting substrate 45 and the sealing film 100 is degassed, and the decompressed state is maintained. The sealing film 100 is further extended.
 その結果、基板5の上面側では、接続部材7が逃げ部27から露出して封止されることなく、凹凸6の形状(電子部品4の形状)、さらに、基板5の下面側では電極3の形状に優れた密着度(気密度)で追従した状態で、軟化した状態の封止用フィルム100により、基板5と電子部品4と電極3とが被覆される。 As a result, the connection member 7 is not exposed and sealed from the escape portion 27 on the upper surface side of the substrate 5, and the shape of the unevenness 6 (the shape of the electronic component 4), and the electrode 3 on the lower surface side of the substrate 5. The substrate 5, the electronic component 4, and the electrode 3 are covered with the sealing film 100 in a softened state in a state of following with an excellent adhesion degree (air density).
 この際、封止用フィルム100の軟化点における伸び率が150%以上3500%以下となっている。これにより、封止用フィルム100は、この加圧時に、電子部品搭載基板45に形成された凹凸6および電極3に対してより優れた形状追従性をもって伸展させることができるため、軟化した状態の封止用フィルム100により、基板5の上面側において基板5と電子部品4とを、さらには基板5の下面側においては電極3を優れた密着性をもって被覆することができる。また、基板5の上面側から下面側へ突出部17を折りこませることで電極3に接触させる際に、突出部17が屈曲した屈曲部において破断してしまうのを的確に抑制または防止することができる。 At this time, the elongation at the softening point of the sealing film 100 is 150% or more and 3500% or less. Thereby, since the film 100 for sealing can be extended with the more excellent shape followability with respect to the unevenness | corrugation 6 and the electrode 3 which were formed in the electronic component mounting board | substrate 45 at the time of this pressurization, the state of the softened state The sealing film 100 can cover the substrate 5 and the electronic component 4 on the upper surface side of the substrate 5 and the electrode 3 on the lower surface side of the substrate 5 with excellent adhesion. Further, when the protruding portion 17 is folded from the upper surface side to the lower surface side of the substrate 5 to be brought into contact with the electrode 3, it is possible to accurately suppress or prevent the protruding portion 17 from being broken at the bent portion. Can do.
 そして、封止用フィルム100により、基板5と電子部品4とを、さらには電極3を優れた密着性(気密性)をもって被覆し、かつ、接続部材7が逃げ部27から露出した状態で、封止用フィルム100を冷却することで、この状態を維持したまま、封止用フィルム100が固化する。 Then, with the sealing film 100, the substrate 5 and the electronic component 4 are further covered with excellent adhesion (air tightness) with the electrode 3, and the connection member 7 is exposed from the escape portion 27. By cooling the sealing film 100, the sealing film 100 is solidified while maintaining this state.
 これにより、電子部品搭載基板45に形成された凹凸6の形状に追従した状態で、封止用フィルム100により、基板5の上面側において絶縁層12が接触して基板5と電子部品4とが被覆され、かつ、接続部材7が逃げ部27から露出し、さらに、基板5の下面側において電磁波シールド層13が接触して電極3が被覆された封止用フィルム被覆電子部品搭載基板50が得られることとなる。そのため、この封止用フィルム被覆電子部品搭載基板50において、湿気や埃等の外部因子と電子部品4および電極3が接触するのをより的確に抑制または防止することができる。したがって、得られる封止用フィルム被覆電子部品搭載基板50ひいてはこの封止用フィルム被覆電子部品搭載基板50を備える電子機器のより信頼性の向上が図られる。 Thereby, the insulating layer 12 is brought into contact with the upper surface side of the substrate 5 by the sealing film 100 in a state following the shape of the unevenness 6 formed on the electronic component mounting substrate 45, so that the substrate 5 and the electronic component 4 are The sealing film-covered electronic component mounting substrate 50 is obtained, which is covered and the connection member 7 is exposed from the escape portion 27 and the electromagnetic wave shielding layer 13 is in contact with the lower surface side of the substrate 5 to cover the electrode 3. Will be. Therefore, in the sealing film-covered electronic component mounting substrate 50, it is possible to more accurately suppress or prevent the external component such as moisture and dust from contacting the electronic component 4 and the electrode 3. Therefore, the reliability of the obtained electronic device including the sealing film-covered electronic component mounting substrate 50 and thus the sealing film-covered electronic component mounting substrate 50 can be improved.
 また、上記のように、得られた封止用フィルム被覆電子部品搭載基板50において、接続部材7が逃げ部27から露出しているため、電子部品搭載基板45と他の電子部品や電源との電気的な接続を実現することができる。 Further, as described above, in the obtained sealing film-covered electronic component mounting board 50, since the connecting member 7 is exposed from the escape portion 27, the electronic component mounting board 45 and other electronic components or power supply are not connected. An electrical connection can be realized.
 また、上記のような電子部品搭載基板45の被覆に用いられる封止用フィルム100は、絶縁層12および電磁波シールド層13の積層体で構成されるが、電磁波シールド層13は、絶縁層12よりも大きく形成され、その中央部において絶縁層12が積層されるが、端部において、絶縁層12の端部を越えて突出することで形成された突出部17を備えている。そして、この突出部17が、基板5の下側に折り込まれることで電極3を直接被覆する。これにより、電極3が突出部17(電磁波シールド層13)に電気的に接続されるため、得られる封止用フィルム被覆電子部品搭載基板50において、この突出部17を介した電極3と外部との電気的な接続を確保することが可能となる。 Further, the sealing film 100 used for covering the electronic component mounting substrate 45 as described above is composed of a laminate of the insulating layer 12 and the electromagnetic wave shielding layer 13, and the electromagnetic wave shielding layer 13 is formed from the insulating layer 12. The insulating layer 12 is laminated at the central portion thereof, and the end portion is provided with a protruding portion 17 formed by protruding beyond the end portion of the insulating layer 12. Then, the protruding portion 17 is folded under the substrate 5 to directly cover the electrode 3. Thereby, since the electrode 3 is electrically connected to the protrusion 17 (electromagnetic wave shield layer 13), in the obtained film-covered electronic component mounting substrate 50 for sealing, the electrode 3 and the outside through the protrusion 17 It is possible to ensure electrical connection.
 上記の工程を経ることで、封止用フィルム100により、基板5と電子部品4と電極3とが被覆され、かつ、接続部材7が逃げ部27から露出した封止用フィルム被覆電子部品搭載基板50を得ることができる。 Through the above steps, the substrate 5, the electronic component 4, and the electrode 3 are covered with the sealing film 100 and the connecting member 7 is exposed from the escape portion 27. 50 can be obtained.
 <第21実施形態>
 [封止用フィルム]
 次に、本発明の封止用フィルム100の第21実施形態について説明する。
<Twenty-first embodiment>
[Sealing film]
Next, a twenty-first embodiment of the sealing film 100 of the present invention will be described.
 図43は、本発明の封止用フィルムの第21実施形態を示す縦断面図、図44(a)~(c)は、図43に示す封止用フィルムを用いて電子部品搭載基板の封止方法を説明するための縦断面図である。なお、以下の説明では、説明の便宜上、図43、図44中の上側を「上」、下側を「下」と言う。 FIG. 43 is a longitudinal sectional view showing a twenty-first embodiment of the sealing film of the present invention, and FIGS. 44 (a) to 44 (c) show the sealing of an electronic component mounting substrate using the sealing film shown in FIG. It is a longitudinal cross-sectional view for demonstrating the stopping method. In the following description, for convenience of description, the upper side in FIGS. 43 and 44 is referred to as “upper” and the lower side is referred to as “lower”.
 以下、第21実施形態について説明するが、前記第1~第20実施形態と異なる点を中心に説明し、同様の事項についてはその説明を省略する。 Hereinafter, the twenty-first embodiment will be described, but the description will focus on differences from the first to twentieth embodiments, and description of similar matters will be omitted.
 第21実施形態では、封止用フィルム100が備える電磁波シールド層13および被覆層14の構成が異なり、さらに、この封止用フィルム100を用いて被覆する電子部品搭載基板45の構成が異なること以外は、前記第1実施形態と同様である。 In the twenty-first embodiment, the configurations of the electromagnetic wave shielding layer 13 and the covering layer 14 included in the sealing film 100 are different, and further, the configuration of the electronic component mounting substrate 45 covered with the sealing film 100 is different. Is the same as in the first embodiment.
 封止用フィルム100は、図43、図44に示すように、絶縁層12と、この絶縁層12の一方の面側(上面側)に積層された電磁波シールド層13とを備える積層体で構成されている。すなわち、電磁波シールド層13は、被覆すべき電子部品搭載基板45の反対側(上面側)において、絶縁層12に積層されている。そして、この電磁波シールド層13は、絶縁層12よりも大きく形成され、その端部が絶縁層12の端部(縁部)から露出している。換言すれば、電磁波シールド層13が、絶縁層12の端部を越えて突出することで形成された突出部15を備えている。 43 and 44, the sealing film 100 includes a laminated body including an insulating layer 12 and an electromagnetic wave shielding layer 13 laminated on one surface side (upper surface side) of the insulating layer 12. Has been. That is, the electromagnetic wave shielding layer 13 is laminated on the insulating layer 12 on the opposite side (upper surface side) of the electronic component mounting substrate 45 to be covered. The electromagnetic wave shielding layer 13 is formed to be larger than the insulating layer 12, and its end is exposed from the end (edge) of the insulating layer 12. In other words, the electromagnetic wave shielding layer 13 includes the protruding portion 15 formed by protruding beyond the end portion of the insulating layer 12.
 ここで、封止用フィルム100により被覆される電子部品搭載基板45は、図44に示すように、基板5と、基板5の上面(一方の面)側の中央部に搭載(載置)された電子部品4と、この電子部品4に電気的に接続され、基板5の下面(他方の面)側の端部に形成された電極3とを備えている。このような電子部品搭載基板45において、基板5の上面への電子部品4の搭載および基板5の下面への電極3の形成により、基板5の上面および下面に凸部61と凹部62とからなる凹凸6が形成される。なお、基板5としては、例えば、プリント配線基板が挙げられ、基板5上に搭載する電子部品4としては、例えば、半導体素子、コンデンサー、コイル、コネクターおよび抵抗等が挙げられ、電極3としては、例えば、外部から電気を供給するための電源と接続するための電極、他の電子部品と電気的に接続するための電極、および、電子部品4を接地するためのグランド電極等が挙げられる。 Here, as shown in FIG. 44, the electronic component mounting substrate 45 covered with the sealing film 100 is mounted (placed) on the substrate 5 and the central portion on the upper surface (one surface) side of the substrate 5. The electronic component 4 and the electrode 3 electrically connected to the electronic component 4 and formed on the lower surface (the other surface) side of the substrate 5 are provided. In such an electronic component mounting substrate 45, the electronic component 4 is mounted on the upper surface of the substrate 5 and the electrode 3 is formed on the lower surface of the substrate 5, so that the upper surface and the lower surface of the substrate 5 are formed with the convex portions 61 and the concave portions 62. Unevenness 6 is formed. Examples of the substrate 5 include a printed wiring board. Examples of the electronic component 4 mounted on the substrate 5 include a semiconductor element, a capacitor, a coil, a connector, and a resistor. For example, an electrode for connecting to a power source for supplying electricity from the outside, an electrode for electrically connecting to another electronic component, a ground electrode for grounding the electronic component 4 and the like can be mentioned.
 このように電子部品4が上面側に搭載された電子部品搭載基板45に対して、電磁波シールド層13を上側にして、封止用フィルム100を用いて封止すると、電子部品4は、絶縁層12を介して電磁波シールド層13で封止される。そのため、得られた封止用フィルム被覆電子部品搭載基板50は、電子部品4への電磁波によるノイズの影響が的確に抑制または防止されたものとなる。 When the electronic component mounting substrate 45 having the electronic component 4 mounted on the upper surface side is sealed with the sealing film 100 with the electromagnetic wave shielding layer 13 on the upper side, the electronic component 4 becomes an insulating layer. 12 is sealed with an electromagnetic wave shielding layer 13. Therefore, in the obtained film-covered electronic component mounting substrate 50 for sealing, the influence of noise due to electromagnetic waves on the electronic component 4 is accurately suppressed or prevented.
 さらに、この封止用フィルム100を用いた被覆の際に、電磁波シールド層13が備える突出部15は、基板5の下面側に折り込むことが可能なように構成されている。そのため、基板5の下面側の端部に形成された電極3に、この突出部15を接触させた状態とすることができる。したがって、この突出部15は、電磁波シールド層13で構成され導電性を有することから、得られた封止用フィルム被覆電子部品搭載基板50おいて、この電磁波シールド層13を介した電極3と外部との電気的な接続を確保することができる。 Furthermore, the protrusion 15 provided in the electromagnetic wave shielding layer 13 is configured to be able to be folded on the lower surface side of the substrate 5 when the sealing film 100 is used for coating. Therefore, the protruding portion 15 can be brought into contact with the electrode 3 formed on the end portion on the lower surface side of the substrate 5. Accordingly, since the protruding portion 15 is composed of the electromagnetic wave shielding layer 13 and has conductivity, in the obtained film-covered electronic component mounting substrate 50 for sealing, the electrode 3 and the outside through the electromagnetic wave shielding layer 13 are provided. Can be secured.
 また、前記第1実施形態と同様に、前記軟化点における伸び率は、150%以上3500%以下であるが、150%以上2000%以下であることがより好ましく、1000%以上2000%以下であることがさらに好ましい。 Further, as in the first embodiment, the elongation at the softening point is 150% or more and 3500% or less, more preferably 150% or more and 2000% or less, and more preferably 1000% or more and 2000% or less. More preferably.
 この軟化点における伸び率がかかる範囲内であることにより、封止用フィルム100による電子部品搭載基板45の被覆の際に、電子部品搭載基板45が備える、凸部61と凹部62とからなる凹凸6に対して、優れた追従性をもって封止した状態で、被覆することができる。そのため、この封止用フィルム100を被覆することで得られる封止用フィルム被覆電子部品搭載基板50において、基板5上の電子部品4が湿気や埃等の外部因子と接触するのを的確に抑制または防止することができる。したがって、得られる封止用フィルム被覆電子部品搭載基板50ひいてはこの封止用フィルム被覆電子部品搭載基板50を備える電子機器の信頼性の向上が図られる。さらに、基板5の上面側から下面側へ突出部15を折り込ませることで電極3に接触させる際に、突出部15が屈曲した屈曲部において破断してしまうのを的確に抑制または防止することができる。 When the elongation at the softening point is within such a range, when the electronic component mounting substrate 45 is covered with the sealing film 100, the unevenness including the convex portions 61 and the concave portions 62 included in the electronic component mounting substrate 45 is provided. 6 can be covered in a sealed state with excellent followability. Therefore, in the sealing film-covered electronic component mounting substrate 50 obtained by covering the sealing film 100, the electronic component 4 on the substrate 5 is accurately prevented from coming into contact with external factors such as moisture and dust. Or it can be prevented. Accordingly, the reliability of the obtained electronic device including the sealing film-covered electronic component mounting substrate 50 and thus the sealing film-covered electronic component mounting substrate 50 can be improved. Further, when the protruding portion 15 is folded from the upper surface side to the lower surface side of the substrate 5 and brought into contact with the electrode 3, it is possible to accurately suppress or prevent the protruding portion 15 from being broken at the bent portion. it can.
 また、封止用フィルム100の軟化点における伸び率を前記範囲内とすることにより、基板5に設けられた凹凸6における段差が具体的な大きさとして、10mm以上のように大きいものであったとしても、封止用フィルム100を凹凸6の形状に対応して追従させることができる。 In addition, by setting the elongation at the softening point of the sealing film 100 within the above range, the step in the unevenness 6 provided on the substrate 5 was as large as 10 mm or more as a specific size. Even so, the sealing film 100 can be made to follow the shape of the irregularities 6.
 封止用フィルム100の全体としての平均厚さは、10μm以上700μm以下であることが好ましく、20μm以上400μm以下であることがより好ましい。封止用フィルム100の平均厚さをかかる範囲内に設定することにより、封止用フィルム100の途中において、封止用フィルム100が破断するのを的確に抑制または防止し得るとともに、封止用フィルム100の軟化点における伸び率を150%以上3500%以下の範囲内に確実に設定することができる。 The average thickness of the sealing film 100 as a whole is preferably 10 μm or more and 700 μm or less, and more preferably 20 μm or more and 400 μm or less. By setting the average thickness of the sealing film 100 within this range, the sealing film 100 can be accurately suppressed or prevented from breaking in the middle of the sealing film 100, and for sealing. The elongation at the softening point of the film 100 can be reliably set within a range of 150% to 3500%.
 また、封止用フィルム100における、絶縁層12の端部を越えて突出する突出部15の長さは、特に限定されず、0.1cm以上5.0cm以下であることが好ましく、0.5cm以上2.5cm以下であることがより好ましい。突出部15の長さをかかる範囲内に設定することにより、突出部15を、基板5の上面側から下面側に折り込みつつ、基板5の下面側に位置する電極3に到達させることができるため、突出部15と電極3との電気的な接続を実現することができる。 Further, the length of the protruding portion 15 protruding beyond the end portion of the insulating layer 12 in the sealing film 100 is not particularly limited, and is preferably 0.1 cm or more and 5.0 cm or less, 0.5 cm More preferably, it is 2.5 cm or less. By setting the length of the projecting portion 15 within such a range, the projecting portion 15 can reach the electrode 3 located on the lower surface side of the substrate 5 while being folded from the upper surface side of the substrate 5 to the lower surface side. The electrical connection between the protrusion 15 and the electrode 3 can be realized.
 [電子部品搭載基板の封止方法]
 次に、上述した本発明の封止用フィルムを用いた電子部品搭載基板の封止方法(本発明の電子部品搭載基板の封止方法)について説明する。
[Method of sealing electronic component mounting board]
Next, the electronic component mounting substrate sealing method (the electronic component mounting substrate sealing method of the present invention) using the above-described sealing film of the present invention will be described.
 本実施形態の電子部品搭載基板の封止方法は、基板5と電子部品4とを覆うように、絶縁層12を電子部品搭載基板45側にして封止用フィルム100を電子部品搭載基板45上に配置させつつ、突出部15を、基板5の下面(他方の面)側に折り込むことにより電極3に接触させる配置工程と、封止用フィルム100を加熱し軟化させるとともに、減圧する加熱・減圧工程と、封止用フィルム100を冷却させるとともに、加圧することで、突出部15が電極3に接触した状態で、基板5と電子部品4とを封止用フィルム100で封止する冷却・加圧工程とを有する。 The electronic component mounting substrate sealing method of this embodiment is such that the sealing film 100 is placed on the electronic component mounting substrate 45 with the insulating layer 12 facing the electronic component mounting substrate 45 so as to cover the substrate 5 and the electronic component 4. And placing the protrusion 15 on the lower surface (the other surface) side of the substrate 5 so as to be in contact with the electrode 3 while heating and depressurizing the sealing film 100 while heating and softening it. The process and the cooling film 100 are cooled and pressurized so that the substrate 5 and the electronic component 4 are sealed with the sealing film 100 in a state where the protruding portion 15 is in contact with the electrode 3 by applying pressure. Pressure step.
 以下、電子部品搭載基板の封止方法の各工程について、順次説明する。
(配置工程)
 まず、図44(a)に示すように、封止用フィルム100が備える電磁波シールド層13および絶縁層12のうち絶縁層12を、電子部品搭載基板45に対向させた状態で、電子部品搭載基板45が備える基板5と電子部品4とを覆うように、封止用フィルム100を電子部品搭載基板45上に配置する。
Hereafter, each process of the sealing method of an electronic component mounting substrate is demonstrated sequentially.
(Arrangement process)
First, as shown in FIG. 44 (a), the electronic component mounting board in a state where the insulating layer 12 of the electromagnetic wave shielding layer 13 and the insulating layer 12 included in the sealing film 100 is opposed to the electronic component mounting board 45. The sealing film 100 is disposed on the electronic component mounting substrate 45 so as to cover the substrate 5 and the electronic component 4 included in the electronic component 45.
 そして、この際、絶縁層12の端部を越えて突出する突出部15を、基板5の下面側に折り込み、これにより、突出部15を電極3に接触させる(図44(b))。 At this time, the protruding portion 15 protruding beyond the end portion of the insulating layer 12 is folded to the lower surface side of the substrate 5, thereby bringing the protruding portion 15 into contact with the electrode 3 (FIG. 44B).
(加熱・減圧工程)
 次に、図44(b)に示す状態を維持したまま、封止用フィルム100を加熱し軟化させるとともに、減圧する。
(Heating and decompression process)
Next, the sealing film 100 is heated and softened while maintaining the state shown in FIG.
 このように、封止用フィルム100を加熱することにより、封止用フィルム100すなわち電磁波シールド層13および絶縁層12が軟化し、その結果、基板5の上面側では、基板5に電子部品4を搭載することにより形成された凹凸6の形状に対して、追従し得る状態となり、さらに、基板5の下面側では、基板5に設けられた電極3の形状に対して、追従し得る状態となる。 Thus, by heating the sealing film 100, the sealing film 100, that is, the electromagnetic wave shielding layer 13 and the insulating layer 12 are softened. As a result, the electronic component 4 is attached to the substrate 5 on the upper surface side of the substrate 5. It is in a state where it can follow the shape of the unevenness 6 formed by mounting, and further, it can follow the shape of the electrode 3 provided on the substrate 5 on the lower surface side of the substrate 5. .
 また、この際、電子部品搭載基板45および封止用フィルム100を、減圧雰囲気下に配置することで、封止用フィルム100の外側ばかりでなく、電子部品搭載基板45と封止用フィルム100との間の気体(空気)が脱気される。 At this time, the electronic component mounting substrate 45 and the sealing film 100 are arranged in a reduced-pressure atmosphere, so that not only the outside of the sealing film 100 but also the electronic component mounting substrate 45 and the sealing film 100 The gas (air) in between is degassed.
 これにより、封止用フィルム100が伸展しながら、基板5の上側では、凹凸6の形状、すなわち、基板5上の電子部品4の形状に若干追従した状態となり、基板5の下側では、基板5上の電極3の形状に若干追従した状態となる。 As a result, while the sealing film 100 is extended, the shape of the irregularities 6 on the upper side of the substrate 5, that is, the shape of the electronic component 4 on the substrate 5 is slightly followed. 5 slightly follows the shape of the electrode 3 on the top.
 本工程により、電子部品搭載基板45の上面側に形成された凹凸6の形状、および、下面側に形成された電極3の形状に対して、封止用フィルム100を、追従し得る状態とすることができる。 By this step, the sealing film 100 can follow the shape of the irregularities 6 formed on the upper surface side of the electronic component mounting substrate 45 and the shape of the electrodes 3 formed on the lower surface side. be able to.
 なお、封止用フィルム100の加熱と、雰囲気の減圧とは、加熱の後に減圧してもよく、減圧の後に加熱してもよいが、加熱と減圧とをほぼ同時に行うことが好ましい。これにより、軟化した封止用フィルム100を、凹凸6の形状および電極3の形状に確実に若干追従した状態とすることができる。 The heating of the sealing film 100 and the reduced pressure of the atmosphere may be reduced after the heating or may be heated after the reduced pressure, but it is preferable to perform the heating and the reduced pressure almost simultaneously. Thereby, the softened film 100 for sealing can be made into the state which followed the shape of the unevenness | corrugation 6 and the shape of the electrode 3 a little reliably.
(冷却・加圧工程)
 次に、図44(c)に示すように、封止用フィルム100を冷却させるとともに、加圧する。
(Cooling / pressurization process)
Next, as shown in FIG. 44C, the sealing film 100 is cooled and pressurized.
 このように、減圧された雰囲気から加圧することで、前記加熱・減圧工程において、電子部品搭載基板45と封止用フィルム100との間が脱気され、減圧状態が維持されていることから、封止用フィルム100がさらに伸展することとなる。 Thus, by pressurizing from the decompressed atmosphere, in the heating and decompression step, the space between the electronic component mounting substrate 45 and the sealing film 100 is degassed, and the decompressed state is maintained. The sealing film 100 is further extended.
 その結果、基板5の上側では凹凸6の形状(電子部品4の形状)、さらに、基板5の下側では電極3の形状に優れた密着度(気密度)で追従した状態で、軟化した状態の封止用フィルム100により、基板5と電子部品4と電極3とが被覆される。 As a result, the upper surface of the substrate 5 is softened while following the shape of the unevenness 6 (the shape of the electronic component 4), and the lower side of the substrate 5 with the excellent degree of adhesion (air density) of the shape of the electrode 3. The sealing film 100 covers the substrate 5, the electronic component 4, and the electrode 3.
 なお、前記加熱減圧工程において、凹凸6の形状に対応して封止用フィルム100が十分追従していれば、加圧工程を省略することができる。 In the heating and decompression step, if the sealing film 100 sufficiently follows the shape of the irregularities 6, the pressing step can be omitted.
 この際、封止用フィルム100の軟化点における伸び率が150%以上3500%以下となっている。これにより、封止用フィルム100は、この加圧時に、電子部品搭載基板45に形成された凹凸6および電極3に対してより優れた形状追従性をもって伸展させることができる。そのため、軟化した状態の封止用フィルム100により、基板5の上側において基板5と電子部品4とを、さらには基板5の下側においては電極3を優れた密着性をもって被覆することができる。また、基板5の上面側から下面側へ突出部15を折り込ませることで電極3に接触させる際に、突出部15が屈曲した屈曲部において破断してしまうのを的確に抑制または防止することができる。 At this time, the elongation at the softening point of the sealing film 100 is 150% or more and 3500% or less. Thereby, the film 100 for sealing can be extended with the more excellent shape followability with respect to the unevenness | corrugation 6 and the electrode 3 which were formed in the electronic component mounting board | substrate 45 at the time of this pressurization. Therefore, the softened sealing film 100 can cover the substrate 5 and the electronic component 4 on the upper side of the substrate 5 and the electrode 3 on the lower side of the substrate 5 with excellent adhesion. Further, when the protruding portion 15 is folded from the upper surface side to the lower surface side of the substrate 5 to be brought into contact with the electrode 3, it is possible to accurately suppress or prevent the protruding portion 15 from breaking at the bent portion. it can.
 そして、封止用フィルム100により、基板5と電子部品4とを、さらには電極3を優れた密着性(気密性)をもって被覆した状態で、封止用フィルム100を冷却することで、この状態を維持したまま、封止用フィルム100が固化する。 Then, the sealing film 100 is cooled in a state where the sealing film 100 covers the substrate 5 and the electronic component 4, and further the electrode 3 with excellent adhesion (airtightness). The sealing film 100 is solidified while maintaining the above.
 これにより、電子部品搭載基板45に形成された凹凸6の形状に追従した状態で、封止用フィルム100により、基板5の上側において絶縁層12が接触した状態で基板5と電子部品4とが被覆され、基板5の下側において電磁波シールド層13が接触した状態で基板5と電極3が被覆された封止用フィルム被覆電子部品搭載基板50が得られることとなる。そのため、この封止用フィルム被覆電子部品搭載基板50において、湿気や埃等の外部因子と電子部品4および電極3が接触するのを的確に抑制または防止することができる。したがって、得られる封止用フィルム被覆電子部品搭載基板50ひいてはこの封止用フィルム被覆電子部品搭載基板50を備える電子機器の信頼性の向上が図られる。 Thereby, the substrate 5 and the electronic component 4 are in contact with the insulating layer 12 on the upper side of the substrate 5 by the sealing film 100 while following the shape of the unevenness 6 formed on the electronic component mounting substrate 45. The sealing film-covered electronic component mounting substrate 50 covered with the substrate 5 and the electrode 3 with the electromagnetic wave shielding layer 13 in contact with the lower side of the substrate 5 is obtained. Therefore, in this film-covered electronic component mounting substrate 50 for sealing, it is possible to accurately suppress or prevent the external component such as moisture and dust from contacting the electronic component 4 and the electrode 3. Accordingly, the reliability of the obtained electronic device including the sealing film-covered electronic component mounting substrate 50 and thus the sealing film-covered electronic component mounting substrate 50 can be improved.
 また、上記のような電子部品搭載基板45の被覆に用いられる封止用フィルム100は、絶縁層12と電磁波シールド層13の積層体で構成されるが、電磁波シールド層13は、絶縁層12よりも大きく形成され、その中央部において絶縁層12が積層されるが、端部において、絶縁層12の端部を越えて突出することで形成された突出部15を備えている。 The sealing film 100 used for covering the electronic component mounting substrate 45 as described above is composed of a laminate of the insulating layer 12 and the electromagnetic wave shielding layer 13. The electromagnetic wave shielding layer 13 is formed from the insulating layer 12. The insulating layer 12 is laminated at the central portion thereof, and the projecting portion 15 formed by projecting beyond the end portion of the insulating layer 12 is provided at the end portion.
 そのため、本工程において、電磁波シールド層13の中央部では、絶縁層12を介して、電子部品4が被覆される。したがって、電子部品4への電磁波によるノイズの影響が的確に抑制または防止された封止用フィルム被覆電子部品搭載基板50を得ることができる。 Therefore, in this step, the electronic component 4 is covered with the insulating layer 12 in the central portion of the electromagnetic wave shielding layer 13. Therefore, it is possible to obtain the sealing film-covered electronic component mounting substrate 50 in which the influence of noise due to electromagnetic waves on the electronic component 4 is accurately suppressed or prevented.
 さらに、電磁波シールド層13の端部では、絶縁層12が介在することなく、導電性を有する突出部15が、基板5の下側に折り込まれることで電極3を直接被覆する。これにより、電極3が突出部15(電磁波シールド層13)に電気的に接続されるため、得られる封止用フィルム被覆電子部品搭載基板50において、この突出部15を介した電極3と外部との電気的な接続を確保することが可能となる。 Furthermore, at the end of the electromagnetic wave shielding layer 13, the projecting portion 15 having conductivity is directly covered with the electrode 3 by being folded under the substrate 5 without the insulating layer 12 interposed. Thereby, since the electrode 3 is electrically connected to the protrusion 15 (electromagnetic wave shield layer 13), in the obtained film-covered electronic component mounting substrate 50 for sealing, the electrode 3 and the outside through the protrusion 15 It is possible to ensure electrical connection.
 なお、封止用フィルム100の冷却と、雰囲気の加圧とは、加圧の後に冷却してもよいが、冷却と加圧とをほぼ同時に行うことが好ましい。これにより、凹凸6および電極3の形状に対応して、封止用フィルム100をより優れた密着性をもって被覆させることができる。 In addition, although cooling of the film 100 for sealing and pressurization of an atmosphere may be cooled after pressurization, it is preferable to perform cooling and pressurization substantially simultaneously. Thereby, the film 100 for sealing can be coat | covered with the more excellent adhesiveness corresponding to the shape of the unevenness | corrugation 6 and the electrode 3. FIG.
 上記の工程を経ることで、封止用フィルム100により、基板5と電子部品4と電極3とが被覆された封止用フィルム被覆電子部品搭載基板50を得ることができる。
By passing through said process, the film | membrane 5 for electronic components mounting board | substrate 50 for sealing by which the board | substrate 5, the electronic component 4, and the electrode 3 were coat | covered with the film 100 for sealing can be obtained.
 以上、本発明の封止用フィルム、電子部品搭載基板の封止方法および封止用フィルム被覆電子部品搭載基板について説明したが、本発明は、これらに限定されるものではない。 As described above, the sealing film, the electronic component mounting substrate sealing method, and the sealing film-covered electronic component mounting substrate of the present invention have been described, but the present invention is not limited thereto.
 例えば、本発明の封止用フィルムには、同様の機能を発揮し得る、任意の層が追加されていてもよい。また、本発明の封止用フィルムの各実施例を適宜組み合わせてもよい。 For example, in the sealing film of the present invention, an arbitrary layer that can exhibit the same function may be added. Moreover, you may combine each Example of the film for sealing of this invention suitably.
 さらに、本発明の電子部品搭載基板の封止方法には、1または2以上の任意の工程が追加されていてもよい。 Furthermore, one or two or more arbitrary steps may be added to the electronic component mounting substrate sealing method of the present invention.
 以下、本発明を実施例に基づいて詳細に説明するが、本発明はこれに限定されるものではない。 Hereinafter, the present invention will be described in detail based on examples, but the present invention is not limited thereto.
(実施例1A)
<封止用フィルムの製造>
 封止用フィルムを得るために、形成すべき封止用フィルムの各層を構成する樹脂として、それぞれ、以下に示すものを用意した。
Example 1A
<Manufacture of sealing film>
In order to obtain the sealing film, the following resins were prepared as the resins constituting each layer of the sealing film to be formed.
 まず、絶縁層12を構成する樹脂材料として、アイオノマー樹脂(三井デュポンポリケミカル製、「ハイミラン1855」、密度0.940kg/m、MFR1.3g/10min(190℃測定)、融点97℃)を用意した。 First, an ionomer resin (manufactured by Mitsui DuPont Polychemical, “Himiran 1855”, density 0.940 kg / m 3 , MFR 1.3 g / 10 min (measured at 190 ° C.), melting point 97 ° C.) is used as a resin material constituting the insulating layer 12. Prepared.
 また、電磁波シールド層13に含まれる樹脂材料として、アイオノマー樹脂(三井デュポンポリケミカル製、「ハイミラン1855」、密度0.940kg/m、MFR1.3g/10min(190℃測定)、融点97℃)を用意した。 In addition, as a resin material included in the electromagnetic wave shielding layer 13, an ionomer resin (manufactured by Mitsui DuPont Polychemical, “Himiran 1855”, density 0.940 kg / m 3 , MFR 1.3 g / 10 min (measured at 190 ° C.), melting point 97 ° C.) Prepared.
 さらに、電磁波シールド層13に含まれる導電性粒子として、銀からなる球状粒子(福田金属箔粉工業製、「Ag-XF301」、50%粒子径4~7μm)を用意した。 Furthermore, spherical particles made of silver (“Ag-XF301”, 50% particle diameter 4 to 7 μm, manufactured by Fukuda Metal Foil Powder Industry) were prepared as conductive particles contained in the electromagnetic wave shielding layer 13.
 次に、絶縁層12を構成する樹脂を用いて押出成形法により絶縁層12を成膜し、また、電磁波シールド層13に含まれる樹脂材料を45重量部と導電性粒子を55重量部との溶剤混合物を用いてコンマコーターにより電磁波シールド層13を塗工成膜した。次に、上記絶縁膜12および上記電磁波シールド層13をラミネーターにより貼り合わせることによって、電磁波シールド層13/絶縁層12の順に積層された積層体を形成した。その後、絶縁層12の縁部を、エッチング法を用いて除去した。これにより、図1に示すような、突出部15を備える電磁波シールド層13と絶縁層12とで構成される積層体からなる実施例1Aの封止用フィルムを得た。 Next, the insulating layer 12 is formed by an extrusion method using a resin constituting the insulating layer 12, and 45 parts by weight of the resin material included in the electromagnetic wave shielding layer 13 and 55 parts by weight of the conductive particles are included. The electromagnetic wave shielding layer 13 was applied and formed by a comma coater using the solvent mixture. Next, the insulating film 12 and the electromagnetic wave shielding layer 13 were bonded together by a laminator to form a laminate in which the electromagnetic wave shielding layer 13 / the insulating layer 12 were laminated in this order. Then, the edge part of the insulating layer 12 was removed using the etching method. This obtained the sealing film of Example 1A which consists of a laminated body comprised with the electromagnetic wave shield layer 13 provided with the protrusion part 15 and the insulating layer 12 as shown in FIG.
 なお、得られた実施例1Aの封止用フィルムの各層の平均厚さ(μm)は、それぞれ、電磁波シールド層13/絶縁層12で100/100μmであり、合計厚さは、200μmであった。 In addition, the average thickness (μm) of each layer of the obtained sealing film of Example 1A was 100/100 μm in the electromagnetic wave shielding layer 13 / insulating layer 12, and the total thickness was 200 μm. .
 また、実施例1Aの封止用フィルムの軟化点における伸び率を測定したところ880%であった。 The elongation at the softening point of the sealing film of Example 1A was measured and found to be 880%.
 さらに、実施例1Aの封止用フィルムにおける、25℃以上80℃以下の温度範囲での線膨張率を測定したところ、51ppm/Kであった。 Furthermore, when the linear expansion coefficient in the temperature range of 25 degreeC or more and 80 degrees C or less in the film for sealing of Example 1A was measured, it was 51 ppm / K.
<封止用フィルム被覆電子部品搭載基板の製造>
 まず、任意の電子部品搭載基板を用意し、その後、スキンパック包装機(ハイパック社製、「HI-750シリーズ」)が備えるチャンバー内において、電子部品搭載基板が有する基板と電子部品とを覆うように得られた実施例1Aの封止用フィルム100を、絶縁層2を電子部品搭載基板45側にして、配置した。
<Manufacture of film-coated electronic component mounting substrate for sealing>
First, an optional electronic component mounting substrate is prepared, and then the electronic component mounting substrate and the electronic component are covered in a chamber of a skin pack packaging machine (“HI-750 series” manufactured by Hipack). The sealing film 100 of Example 1A thus obtained was arranged with the insulating layer 2 facing the electronic component mounting substrate 45 side.
 次に、封止用フィルムを加熱し軟化させるとともに、チャンバー内を減圧した。なお、封止用フィルムを加熱した温度は125℃であり、チャンバーの圧力は0.4kPaであり、かかる加熱・減圧の条件を1分間保持した。 Next, the sealing film was heated and softened, and the pressure in the chamber was reduced. In addition, the temperature which heated the film for sealing was 125 degreeC, the pressure of the chamber was 0.4 kPa, and the conditions of this heating and pressure reduction were hold | maintained for 1 minute.
 次に、チャンバー内を常温・常圧に戻すことで、封止用フィルムを冷却するとともに、チャンバー内を加圧した。これにより、基板と電子部品とが封止用フィルムで被覆された実施例1Aの封止用フィルム被覆電子部品搭載基板を得た。 Next, by returning the inside of the chamber to room temperature and normal pressure, the sealing film was cooled and the inside of the chamber was pressurized. Thereby, the film-covered electronic component mounting substrate for sealing of Example 1A in which the substrate and the electronic component were coated with the film for sealing was obtained.
(実施例2A)
 電磁波シールド層13の平均厚さ(μm)を10μmにしたこと以外は、前記実施例1Aと同様にして実施例2Aの封止用フィルムおよび封止用フィルム被覆電子部品搭載基板を得た。
(Example 2A)
A sealing film and a sealing film-covered electronic component mounting substrate of Example 2A were obtained in the same manner as in Example 1A, except that the average thickness (μm) of the electromagnetic wave shielding layer 13 was 10 μm.
(実施例3A)
 電磁波シールド層13の平均厚さ(μm)を400μmにしたこと以外は、前記実施例1Aと同様にして実施例3Aの封止用フィルムおよび封止用フィルム被覆電子部品搭載基板を得た。
(Example 3A)
A sealing film and a sealing film-covered electronic component mounting substrate of Example 3A were obtained in the same manner as in Example 1A except that the average thickness (μm) of the electromagnetic wave shielding layer 13 was 400 μm.
(実施例4A)
 電磁波シールド層13に含まれる樹脂材料を20重量部にし導電性粒子を80重量部にし、さらに、電磁波シールド層13の平均厚さ(μm)を10μmにしたこと以外は、前記実施例1Aと同様にして実施例4Aの封止用フィルムおよび封止用フィルム被覆電子部品搭載基板を得た。
(Example 4A)
The same as Example 1A except that the resin material contained in the electromagnetic wave shielding layer 13 is 20 parts by weight, the conductive particles are 80 parts by weight, and the average thickness (μm) of the electromagnetic wave shielding layer 13 is 10 μm. Thus, a sealing film of Example 4A and a sealing film-coated electronic component mounting substrate were obtained.
(実施例5A)
 電磁波シールド層13の平均厚さ(μm)を400μmにしたこと以外は、前記実施例4Aと同様にして実施例5Aの封止用フィルムおよび封止用フィルム被覆電子部品搭載基板を得た。
(Example 5A)
A sealing film and a sealing film-covered electronic component mounting substrate of Example 5A were obtained in the same manner as in Example 4A, except that the average thickness (μm) of the electromagnetic wave shielding layer 13 was 400 μm.
(実施例6A)
 電磁波シールド層13に含まれる樹脂材料として、接着樹脂(三井化学製、「アドマーNF536」)を用意したこと以外は前記実施例1Aと同様にして実施例6Aの封止用フィルムおよび封止用フィルム被覆電子部品搭載基板を得た。
(Example 6A)
The sealing film and sealing film of Example 6A were the same as Example 1A except that an adhesive resin (“Admer NF536” manufactured by Mitsui Chemicals) was prepared as the resin material included in the electromagnetic wave shielding layer 13. A coated electronic component mounting substrate was obtained.
(実施例7A)
 絶縁層12を構成する樹脂材料として、接着樹脂(三井化学製、「アドマーNF536」)を用意したこと以外は前記実施例1Aと同様にして実施例7Aの封止用フィルムおよび封止用フィルム被覆電子部品搭載基板を得た。
(Example 7A)
The sealing film and sealing film covering of Example 7A were the same as Example 1A except that an adhesive resin (“Admer NF536” manufactured by Mitsui Chemicals) was prepared as the resin material constituting the insulating layer 12. An electronic component mounting board was obtained.
(実施例8A)
 絶縁層12を構成する樹脂材料として、ポリオレフィン樹脂(「ノーブレンFS2011DG2」、密度0.900g/cm、メルトインデックス2.0g/10min(230℃測定)、融点160℃)を用意し、形成する絶縁層12の平均厚さ(μm)を50μmとしたこと以外は前記実施例1Aと同様にして実施例8Aの封止用フィルムおよび封止用フィルム被覆電子部品搭載基板を得た。
(Example 8A)
As the resin material constituting the insulating layer 12, a polyolefin resin ( "Noblen FS2011DG2", density 0.900 g / cm 3, melt index 2.0 g / 10min (230 ° C. Measurement), mp 160 ° C.) was prepared, formed to insulate A sealing film and a sealing film-covered electronic component mounting substrate of Example 8A were obtained in the same manner as in Example 1A, except that the average thickness (μm) of the layer 12 was 50 μm.
(比較例1A)
 比較例1Aとして、市販の二軸延伸PETフィルム(東洋紡社製、銘柄:E5107)を用意した。
(Comparative Example 1A)
As Comparative Example 1A, a commercially available biaxially stretched PET film (manufactured by Toyobo Co., Ltd., brand: E5107) was prepared.
<評価試験>
 各実施例(実施例1A~8A)および比較例(比較例1A)で作製した封止用フィルムまたは封止用フィルム被覆電子部品搭載基板について、形状追従性、シワの発生の有無、電磁波シールド性および導電性の評価を行った。以下に、これらの評価方法について説明する。
<Evaluation test>
With respect to the sealing film or the film-covered electronic component mounting substrate prepared in each of the examples (Examples 1A to 8A) and the comparative example (Comparative Example 1A), shape followability, wrinkle generation, electromagnetic wave shielding And the conductivity was evaluated. Below, these evaluation methods are demonstrated.
<<形状追従性>>
 形状追従性は、以下のようにして評価した。
<< Shape followability >>
The shape followability was evaluated as follows.
 すなわち、各実施例および比較例で作製した封止用フィルム被覆電子部品搭載基板について、被覆した凹凸における空隙の有無により、以下の評価基準に基づいて判断した。なお、空隙の有無は、顕微鏡を用いて観察した。 That is, the sealing film-covered electronic component mounting substrate produced in each Example and Comparative Example was judged based on the following evaluation criteria based on the presence or absence of voids in the coated unevenness. The presence or absence of voids was observed using a microscope.
 各符号は以下のとおりであり、AおよびBを合格とし、Cを不合格とした。
 A:段差の底部にまで、充填された状態で被覆されている
 B:段差の底部において若干の空隙が形成されているものの、ほぼ全体に亘って充填された状態で被覆されている
 C:段差の底部において明らかな空隙が形成された状態で被覆されている
Each code | symbol is as follows, A and B were set as the pass, and C was set as the failure.
A: Covered in a filled state up to the bottom of the step B: Although a slight gap is formed in the bottom of the step, it is covered in a fully filled state C: Step It is covered with a clear gap formed at the bottom of
<<シワの有無>>
 シワの有無は、以下のようにして評価した。
<< Wrinkle presence >>
The presence or absence of wrinkles was evaluated as follows.
 すなわち、各実施例および比較例で作製した封止用フィルム被覆電子部品搭載基板について、被覆した上面におけるシワの有無により、以下の評価基準に基づいて判断した。なお、シワの有無は、マイクロスコープを用いて観察した。 That is, the sealing film-covered electronic component mounting substrate produced in each Example and Comparative Example was judged based on the following evaluation criteria depending on the presence or absence of wrinkles on the coated top surface. The presence or absence of wrinkles was observed using a microscope.
 各符号は以下のとおりであり、Aを合格とし、Bを不合格とした。
 A:封止用フィルムの上面の全体にシワが認められない
 B:封止用フィルムの上面の凸部に対応する位置に明らかなシワが認められる
Each code | symbol is as follows, A was set as the pass and B was set as the failure.
A: No wrinkles are observed on the entire top surface of the sealing film. B: Clear wrinkles are observed at positions corresponding to the convex portions on the top surface of the sealing film.
<<電磁波シールド性>>
 電磁波シールド性は、以下のようにして評価した。
<< Electromagnetic wave shielding properties >>
The electromagnetic shielding properties were evaluated as follows.
 すなわち、各実施例および比較例で作製した封止用フィルムについて、KEC法(電界)を用いて、周波数0.001~1GHzの範囲内における電磁波シールド効果の値を測定し、周波数0.01GHz以上1GHz以下の範囲内における電磁波シールド効果の最小値を求めた。そして、求められた最小値を、以下の評価基準に基づいて判断した。 That is, for the sealing films produced in each Example and Comparative Example, the value of the electromagnetic wave shielding effect in the frequency range of 0.001 to 1 GHz was measured using the KEC method (electric field), and the frequency was 0.01 GHz or more. The minimum value of the electromagnetic wave shielding effect within the range of 1 GHz or less was obtained. And the calculated | required minimum value was judged based on the following evaluation criteria.
 各符号は以下のとおりであり、Aを合格とし、Bを不合格とした。
 A:電磁波シールド効果の最小値が20dB以上である
 B:電磁波シールド効果の最小値が20dB未満である
Each code | symbol is as follows, A was set as the pass and B was set as the failure.
A: The minimum value of the electromagnetic wave shielding effect is 20 dB or more. B: The minimum value of the electromagnetic wave shielding effect is less than 20 dB.
 なお、KEC法は、近傍界で発生する電磁波のシールド効果を電界と磁界に分けて評価する方法であり、この方法を用いた測定は、送信アンテナ(送信用の治具)から送信された電磁波を、シート状をなす封止用フィルムを介して、受信アンテナ(受信用の治具)で受信することで実施することができ、かかるKEC法では、受信アンテナにおいて、封止用フィルムを通過(透過)した電磁波が測定されるすなわち、送信された電磁波(信号)が電磁波シールド層により受信アンテナ側でどれだけ減衰したかが測定される。 The KEC method is a method for evaluating the shielding effect of electromagnetic waves generated in the near field separately for electric and magnetic fields. Measurements using this method are based on electromagnetic waves transmitted from a transmitting antenna (transmission jig). Can be received by a receiving antenna (receiving jig) through a sheet-like sealing film. In such a KEC method, the receiving antenna passes through the sealing film ( The transmitted electromagnetic wave is measured, that is, how much the transmitted electromagnetic wave (signal) is attenuated on the receiving antenna side by the electromagnetic wave shielding layer.
<<導電性>>
 電磁波シールド層における導電性の有無は、以下のようにして評価した。
<< Conductivity >>
The presence or absence of conductivity in the electromagnetic wave shielding layer was evaluated as follows.
 すなわち、各実施例および比較例で作製した封止用フィルム被覆電子部品搭載基板について、電磁波シールド層が備える突出部において、電源と接続し、電子部品の駆動の有無により、以下の評価基準に基づいて判断した。 That is, the sealing film-covered electronic component mounting substrate produced in each example and comparative example is connected to a power source at the protruding portion provided in the electromagnetic wave shielding layer, and based on the following evaluation criteria depending on whether or not the electronic component is driven. Judged.
 各符号は以下のとおりであり、Aを合格とし、Bを不合格とした。
 A:電子部品の駆動が認められる
 B:電子部品の駆動が認められない
 以上の各実施例および比較例の評価試験の結果を表1に示す。
Each code | symbol is as follows, A was set as the pass and B was set as the failure.
A: Driving of electronic components is recognized B: Driving of electronic components is not recognized Table 1 shows the results of the evaluation tests of the above examples and comparative examples.
Figure JPOXMLDOC01-appb-T000001
Figure JPOXMLDOC01-appb-T000001
 表1から明らかなように、実施例1A~8Aの封止用フィルムでは、軟化点における伸び率が150%以上3500%以下であることにより、凹部の底部における空隙、さらには封止用フィルムの上面におけるシワの発生を抑制または防止して、電子部品搭載基板に対して被覆することが可能であった。また、電磁波シールド層が備える突出部を介した、外部電源と電極間の導通を確認することができた。 As is clear from Table 1, in the sealing films of Examples 1A to 8A, the elongation at the softening point is 150% or more and 3500% or less, so that the gap at the bottom of the recess, and further the sealing film The generation of wrinkles on the upper surface can be suppressed or prevented, and the electronic component mounting substrate can be coated. Moreover, the electrical continuity between the external power source and the electrode could be confirmed through the protrusion provided in the electromagnetic wave shielding layer.
 これに対して、比較例1Aの封止用フィルムでは、軟化点における伸び率が150%未満であり、これに起因して、封止用フィルムによる電子部品搭載基板に対する被覆の際に、凹部の底部における空隙および封止用フィルムの上面におけるシワが明らかに発生する結果となった。 On the other hand, in the sealing film of Comparative Example 1A, the elongation at the softening point is less than 150%, and due to this, when covering the electronic component mounting substrate with the sealing film, As a result, voids at the bottom and wrinkles on the top surface of the sealing film were clearly generated.
(実施例1B)
<封止用フィルムの製造>
 封止用フィルムを得るために、形成すべき封止用フィルムの各層を構成する樹脂として、それぞれ、以下に示すものを用意した。
(Example 1B)
<Manufacture of sealing film>
In order to obtain the sealing film, the following resins were prepared as the resins constituting each layer of the sealing film to be formed.
 まず、絶縁層12および被覆層14を構成する樹脂材料として、アイオノマー樹脂(三井デュポンポリケミカル製、「ハイミラン1855」、密度0.940kg/m、MFR1.3g/10min(190℃測定)、融点97℃)を用意した。 First, as a resin material constituting the insulating layer 12 and the coating layer 14, an ionomer resin (manufactured by Mitsui DuPont Polychemical, “Himiran 1855”, density 0.940 kg / m 3 , MFR 1.3 g / 10 min (measured at 190 ° C.), melting point 97 ° C.) was prepared.
 また、電磁波シールド層13に含まれる樹脂材料として、アイオノマー樹脂(三井デュポンポリケミカル製、「ハイミラン1855」、密度0.940kg/m、MFR1.3g/10min(190℃測定)、融点97℃)を用意した。 In addition, as a resin material included in the electromagnetic wave shielding layer 13, an ionomer resin (manufactured by Mitsui DuPont Polychemical, “Himiran 1855”, density 0.940 kg / m 3 , MFR 1.3 g / 10 min (measured at 190 ° C.), melting point 97 ° C.) Prepared.
 さらに、電磁波シールド層13に含まれる導電性粒子として、銀からなる球状粒子(福田金属箔粉工業製、「Ag-XF301」、50%粒子径4~7μm)を用意した。 Furthermore, spherical particles made of silver (“Ag-XF301”, 50% particle diameter 4 to 7 μm, manufactured by Fukuda Metal Foil Powder Industry) were prepared as conductive particles contained in the electromagnetic wave shielding layer 13.
 次に、絶縁層12を構成する樹脂を用いて押出成形法により絶縁層12を成膜した。その後、電磁波シールド層13に含まれる樹脂材料45重量部と導電性粒子55重量部との溶剤混合物を用いてコンマコーターにより絶縁層12上に電磁波シールド層13を塗工成膜した。次に、被覆層14を構成する樹脂を用いてコンマコーターにより被覆層14を電磁波シールド層13上に塗工成膜し、上記絶縁層12、電磁波シールド層13および被覆層14をラミネーターにより貼り合わせることによって、被覆層14/電磁波シールド層13/絶縁層12の順に積層された積層体を形成した後、絶縁層12の縁部を、エッチング法を用いて除去した。これにより、図9に示すような、突出部17を備える絶縁層12と電磁波シールド層13と被覆層14とで構成される積層体からなる実施例1Bの封止用フィルムを得た。 Next, the insulating layer 12 was formed by extrusion molding using a resin constituting the insulating layer 12. Thereafter, the electromagnetic wave shielding layer 13 was formed on the insulating layer 12 by a comma coater using a solvent mixture of 45 parts by weight of the resin material and 55 parts by weight of the conductive particles contained in the electromagnetic wave shielding layer 13. Next, the coating layer 14 is formed on the electromagnetic wave shielding layer 13 by a comma coater using a resin constituting the coating layer 14, and the insulating layer 12, the electromagnetic wave shielding layer 13 and the coating layer 14 are bonded together by a laminator. Thus, after forming a laminated body in which the coating layer 14 / the electromagnetic wave shielding layer 13 / the insulating layer 12 were laminated in this order, the edge of the insulating layer 12 was removed using an etching method. This obtained the sealing film of Example 1B which consists of a laminated body comprised with the insulating layer 12, the electromagnetic wave shield layer 13, and the coating layer 14 provided with the protrusion part 17 as shown in FIG.
 なお、得られた実施例1Bの封止用フィルムの各層の平均厚さ(μm)は、それぞれ、被覆層14/電磁波シールド層13/絶縁層12で50/100/50μmであり、合計厚さは、200μmであり、絶縁層12の端部を越えて突出する突出部17の長さは、2.0cmであった。 The average thickness (μm) of each layer of the sealing film of Example 1B obtained was 50/100/50 μm for the covering layer 14 / electromagnetic wave shielding layer 13 / insulating layer 12, respectively, and the total thickness Is 200 μm, and the length of the protruding portion 17 protruding beyond the end portion of the insulating layer 12 was 2.0 cm.
 また、実施例1Bの封止用フィルムの軟化点における伸び率を測定したところ890%であった。 Further, when the elongation percentage at the softening point of the sealing film of Example 1B was measured, it was 890%.
 さらに、実施例1Bの封止用フィルムにおける、25℃以上80℃以下の温度範囲での線膨張率を測定したところ、53ppm/Kであった。 Furthermore, when the linear expansion coefficient in the temperature range of 25 degreeC or more and 80 degrees C or less in the sealing film of Example 1B was measured, it was 53 ppm / K.
<封止用フィルム被覆電子部品搭載基板の製造>
 まず、基板上に電子部品が搭載され、さらに、基板の下面の縁部に電極が形成された任意の電子部品搭載基板を用意し、その後、スキンパック包装機(ハイパック社製、「HI-750シリーズ」)が備えるチャンバー内において、電子部品搭載基板が有する基板と電子部品とを覆うように得られた実施例1Bの封止用フィルム100を、絶縁層12を電子部品搭載基板45側にして配置し、さらに、突出部17を、基板5の下面側に折り込むことで電極3に接触させた。
<Manufacture of film-coated electronic component mounting substrate for sealing>
First, an electronic component mounting board having an electronic component mounted on the substrate and electrodes formed on the edge of the lower surface of the substrate is prepared, and then a skin pack packaging machine ("HI-" manufactured by Hipack Co., Ltd.) is prepared. 750 series "), the sealing film 100 of Example 1B obtained so as to cover the electronic component mounting substrate and the electronic component mounting substrate is placed on the electronic component mounting substrate 45 side. Further, the projecting portion 17 was brought into contact with the electrode 3 by folding it into the lower surface side of the substrate 5.
 次に、封止用フィルムを加熱し軟化させるとともに、チャンバー内を減圧した。なお、封止用フィルムを加熱した温度は125℃であり、チャンバー内の圧力は0.4kPaであり、かかる加熱・減圧の条件を1分間保持した。 Next, the sealing film was heated and softened, and the pressure in the chamber was reduced. In addition, the temperature which heated the film for sealing was 125 degreeC, the pressure in a chamber was 0.4 kPa, and the conditions of this heating and pressure reduction were hold | maintained for 1 minute.
 次に、チャンバー内を常温・常圧に戻すことで、封止用フィルムを冷却するとともに、チャンバー内を加圧した。これにより、基板と電子部品とが封止用フィルムが備える絶縁層で被覆され、封止用フィルムが備える電磁波シールド層で電極が被覆された実施例1Bの封止用フィルム被覆電子部品搭載基板を得た。 Next, by returning the inside of the chamber to room temperature and normal pressure, the sealing film was cooled and the inside of the chamber was pressurized. Thus, the sealing film-covered electronic component mounting substrate of Example 1B in which the substrate and the electronic component are covered with the insulating layer included in the sealing film and the electrode is covered with the electromagnetic wave shielding layer included in the sealing film. Obtained.
(実施例2B)
 電磁波シールド層13の平均厚さ(μm)を10μmとしたこと以外は、前記実施例1Bと同様にして実施例2Bの封止用フィルムおよび封止用フィルム被覆電子部品搭載基板を得た。
(Example 2B)
A sealing film and a sealing film-covered electronic component mounting substrate of Example 2B were obtained in the same manner as in Example 1B, except that the average thickness (μm) of the electromagnetic wave shielding layer 13 was 10 μm.
(実施例3B)
 電磁波シールド層13の平均厚さ(μm)を400μmとしたこと以外は、前記実施例1Bと同様にして実施例3Bの封止用フィルムおよび封止用フィルム被覆電子部品搭載基板を得た。
(Example 3B)
A sealing film and a sealing film-covered electronic component mounting substrate of Example 3B were obtained in the same manner as in Example 1B except that the average thickness (μm) of the electromagnetic wave shielding layer 13 was 400 μm.
(実施例4B)
 電磁波シールド層13に含まれる樹脂材料を20重量部とし導電性粒子を80重量部とし、さらに、電磁波シールド層13の平均厚さ(μm)を10μmとしたこと以外は、前記実施例1Bと同様にして実施例4Bの封止用フィルムおよび封止用フィルム被覆電子部品搭載基板を得た。
(Example 4B)
The same as Example 1B except that the resin material contained in the electromagnetic wave shielding layer 13 is 20 parts by weight, the conductive particles are 80 parts by weight, and the average thickness (μm) of the electromagnetic wave shielding layer 13 is 10 μm. Thus, the sealing film of Example 4B and the sealing film-coated electronic component mounting substrate were obtained.
(実施例5B)
 電磁波シールド層13の平均厚さ(μm)を400μmとしたこと以外は、前記実施例4Bと同様にして実施例5Bの封止用フィルムおよび封止用フィルム被覆電子部品搭載基板を得た。
(Example 5B)
A sealing film and a sealing film-covered electronic component mounting substrate of Example 5B were obtained in the same manner as in Example 4B, except that the average thickness (μm) of the electromagnetic wave shielding layer 13 was 400 μm.
(実施例6B)
 電磁波シールド層13に含まれる樹脂材料として、接着樹脂(三井化学製、「アドマーNF536」)を用意したこと以外は前記実施例1Bと同様にして実施例6Bの封止用フィルムおよび封止用フィルム被覆電子部品搭載基板を得た。
(Example 6B)
The sealing film and sealing film of Example 6B were the same as Example 1B except that an adhesive resin (“Admer NF536” manufactured by Mitsui Chemicals) was prepared as the resin material included in the electromagnetic wave shielding layer 13. A coated electronic component mounting substrate was obtained.
(実施例7B)
 絶縁層12および被覆層14を構成する樹脂材料として、接着樹脂(三井化学製、「アドマーNF536」)を用意したこと以外は前記実施例1Bと同様にして実施例7Bの封止用フィルムおよび封止用フィルム被覆電子部品搭載基板を得た。
(Example 7B)
The sealing film and sealing of Example 7B were the same as Example 1B except that an adhesive resin (“Admer NF536” manufactured by Mitsui Chemicals) was prepared as the resin material constituting the insulating layer 12 and the coating layer 14. A film-coated electronic component mounting substrate for stopping was obtained.
(実施例8B)
 絶縁層12および被覆層14を構成する樹脂材料として、ポリオレフィン樹脂(「ノーブレンFS2011DG2」、密度0.900g/cm、メルトインデックス2.0g/10min(230℃測定)、融点160℃)を用意し、形成する絶縁層12および被覆層14の平均厚さ(μm)を25μmとしたこと以外は前記実施例1Bと同様にして実施例8Bの封止用フィルムおよび封止用フィルム被覆電子部品搭載基板を得た。
(Example 8B)
A polyolefin resin (“Noblen FS2011DG2”, density 0.900 g / cm 3 , melt index 2.0 g / 10 min (measured at 230 ° C.), melting point 160 ° C.) is prepared as a resin material constituting the insulating layer 12 and the coating layer 14. The sealing film and the sealing film-covered electronic component mounting substrate of Example 8B were the same as Example 1B except that the average thickness (μm) of the insulating layer 12 and the coating layer 14 to be formed was 25 μm. Got.
(参考例1B)
 参考例1Bとして、市販の二軸延伸PETフィルム(東洋紡社製、銘柄:E5107)を用意した。
(Reference Example 1B)
As Reference Example 1B, a commercially available biaxially stretched PET film (manufactured by Toyobo Co., Ltd., brand: E5107) was prepared.
<評価試験>
 各実施例(1B~8B)および参考例(参考例1B)で作製した封止用フィルムまたは封止用フィルム被覆電子部品搭載基板について、前述した実施例1A~8Aに対して行った評価方法を用いて、形状追従性、シワの発生の有無、電磁波シールド性および導電性の評価を行った。
 各実施例および参考例の評価試験の結果を表2に示す。
<Evaluation test>
The sealing film produced in each Example (1B to 8B) and Reference Example (Reference Example 1B) or the evaluation method performed on Examples 1A to 8A described above for the sealing film-covered electronic component mounting substrate was used. It was used to evaluate shape followability, the presence or absence of wrinkles, electromagnetic shielding properties and electrical conductivity.
Table 2 shows the results of the evaluation test of each example and reference example.
Figure JPOXMLDOC01-appb-T000002
Figure JPOXMLDOC01-appb-T000002
 表2から明らかなように、実施例1B~8Bの封止用フィルムでは、軟化点における伸び率が150%以上3500%以下であることにより、凹部の底部における空隙、さらには封止用フィルムの上面におけるシワの発生を抑制または防止して、電子部品搭載基板に対して被覆することが可能であった。また、電磁波シールド層が備える突出部を介した、外部電源と電極間の導通を確認することができた。 As is apparent from Table 2, in the sealing films of Examples 1B to 8B, the elongation at the softening point is 150% or more and 3500% or less, so that the gap at the bottom of the recess, and further the sealing film The generation of wrinkles on the upper surface can be suppressed or prevented, and the electronic component mounting substrate can be coated. Moreover, the electrical continuity between the external power source and the electrode could be confirmed through the protrusion provided in the electromagnetic wave shielding layer.
 これに対して、参考例1Bの封止用フィルムでは、軟化点における伸び率が150%未満であり、これに起因して、封止用フィルムによる電子部品搭載基板に対する被覆の際に、凹部の底部における空隙および封止用フィルムの上面におけるシワが明らかに発生する結果となった。 On the other hand, in the sealing film of Reference Example 1B, the elongation at the softening point is less than 150%, and due to this, when covering the electronic component mounting substrate with the sealing film, As a result, voids at the bottom and wrinkles on the top surface of the sealing film were clearly generated.
(実施例1C)
<封止用フィルムの製造>
 封止用フィルムを得るために、形成すべき封止用フィルムの各層を構成する樹脂として、それぞれ、以下に示すものを用意した。
(Example 1C)
<Manufacture of sealing film>
In order to obtain the sealing film, the following resins were prepared as the resins constituting each layer of the sealing film to be formed.
 まず、絶縁層12を構成する樹脂材料として、アイオノマー樹脂(三井デュポンポリケミカル製、「ハイミラン1855」、密度0.940kg/m、MFR1.3g/10min(190℃測定)、融点97℃)を用意した。 First, an ionomer resin (manufactured by Mitsui DuPont Polychemical, “Himiran 1855”, density 0.940 kg / m 3 , MFR 1.3 g / 10 min (measured at 190 ° C.), melting point 97 ° C.) is used as a resin material constituting the insulating layer 12. Prepared.
 また、電磁波シールド層13に含まれる樹脂材料として、アイオノマー樹脂(三井デュポンポリケミカル製、「ハイミラン1855」、密度0.940kg/m、MFR1.3g/10min(190℃測定)、融点97℃)を用意した。 In addition, as a resin material included in the electromagnetic wave shielding layer 13, an ionomer resin (manufactured by Mitsui DuPont Polychemical, “Himiran 1855”, density 0.940 kg / m 3 , MFR 1.3 g / 10 min (measured at 190 ° C.), melting point 97 ° C.) Prepared.
 さらに、電磁波シールド層13に含まれる導電性粒子として、銀からなる球状粒子(福田金属箔粉工業製、「Ag-XF301」、50%粒子径4~7μm)を用意した。 Furthermore, spherical particles made of silver (“Ag-XF301”, 50% particle diameter 4 to 7 μm, manufactured by Fukuda Metal Foil Powder Industry) were prepared as conductive particles contained in the electromagnetic wave shielding layer 13.
 次に、絶縁層12を構成する樹脂を用いて押出成形法により絶縁層12を成膜した。その後、電磁波シールド層13に含まれる樹脂材料45重量部と導電性粒子55重量部との溶剤混合物を用いてコンマコーターにより絶縁層12上に、突出部16が形成されるように、電磁波シールド層13を塗工成膜した。その後、上記絶縁層12および上記電磁波シールド層13をラミネーターにより貼り合わせた。これにより、図17に示すような、電磁波シールド層13/絶縁層12の順に積層された積層体で構成され、縁部に突出部16を備える実施例1Cの封止用フィルムを得た。 Next, the insulating layer 12 was formed by extrusion molding using a resin constituting the insulating layer 12. Thereafter, the electromagnetic wave shielding layer is formed such that the protrusion 16 is formed on the insulating layer 12 by a comma coater using a solvent mixture of 45 parts by weight of the resin material and 55 parts by weight of the conductive particles contained in the electromagnetic wave shielding layer 13. 13 was formed by coating. Thereafter, the insulating layer 12 and the electromagnetic wave shielding layer 13 were bonded together using a laminator. Thus, as shown in FIG. 17, the sealing film of Example 1C, which is composed of a laminated body in which the electromagnetic wave shielding layer 13 / insulating layer 12 are laminated in this order and has the protrusions 16 at the edges, was obtained.
 なお、得られた実施例1Cの封止用フィルムの各層の平均厚さ(μm)は、それぞれ、電磁波シールド層13/絶縁層12で100/100μmであり、合計厚さは、200μmであり、突出部16の長さは、2.0cmであった。 In addition, the average thickness (μm) of each layer of the obtained sealing film of Example 1C is 100/100 μm respectively in the electromagnetic wave shielding layer 13 / insulating layer 12, and the total thickness is 200 μm. The length of the protrusion 16 was 2.0 cm.
 また、実施例1Cの封止用フィルムの軟化点における伸び率を測定したところ880%であった。 Moreover, it was 880% when the elongation rate in the softening point of the sealing film of Example 1C was measured.
 さらに、実施例1Cの封止用フィルムにおける、25℃以上80℃以下の温度範囲での線膨張率を測定したところ、51ppm/Kであった。 Furthermore, when the linear expansion coefficient in the temperature range of 25 degreeC or more and 80 degrees C or less in the film for sealing of Example 1C was measured, it was 51 ppm / K.
<封止用フィルム被覆電子部品搭載基板の製造>
 まず、基板上に電子部品が搭載された任意の電子部品搭載基板を用意し、その後、スキンパック包装機(ハイパック社製、「HI-750シリーズ」)が備えるチャンバー内において、電子部品搭載基板が有する基板と電子部品とを覆うように得られた実施例1Cの封止用フィルム100を、絶縁層12を電子部品搭載基板45側にして配置し、さらに、突出部16を、基板5の下面側に折り込むことで端部51に接触させた。
<Manufacture of film-coated electronic component mounting substrate for sealing>
First, an optional electronic component mounting substrate having electronic components mounted on the substrate is prepared, and then the electronic component mounting substrate is installed in the chamber of the skin pack packaging machine (“HI-750 series” manufactured by Hipack). The sealing film 100 of Example 1C obtained so as to cover the substrate and the electronic component included in is disposed with the insulating layer 12 facing the electronic component mounting substrate 45, and the protrusions 16 are arranged on the substrate 5. It was made to contact the edge part 51 by folding in the lower surface side.
 次に、封止用フィルムを加熱し軟化させるとともに、チャンバー内を減圧した。なお、封止用フィルムを加熱した温度は125℃であり、チャンバー内の圧力は0.4kPaであり、かかる加熱・減圧の条件を1分間保持した。 Next, the sealing film was heated and softened, and the pressure in the chamber was reduced. In addition, the temperature which heated the film for sealing was 125 degreeC, the pressure in a chamber was 0.4 kPa, and the conditions of this heating and pressure reduction were hold | maintained for 1 minute.
 次に、チャンバー内を常温・常圧に戻すことで、封止用フィルムを冷却するとともに、チャンバー内を加圧した。これにより、基板と電子部品とが封止用フィルムが備える絶縁層12で被覆され、折り込まれた突出部16で基板の下面側の端部51が被覆された実施例1Cの封止用フィルム被覆電子部品搭載基板を得た。 Next, by returning the inside of the chamber to room temperature and normal pressure, the sealing film was cooled and the inside of the chamber was pressurized. Thereby, the board | substrate and the electronic component were coat | covered with the insulating layer 12 with which the film for sealing is equipped, and the film 51 for sealing of Example 1C with which the edge part 51 of the lower surface side of the board | substrate was coat | covered with the folded-out protrusion 16 An electronic component mounting board was obtained.
(実施例2C)
 電磁波シールド層13の平均厚さ(μm)を10μmとしたこと以外は、前記実施例1Cと同様にして実施例2Cの封止用フィルムおよび封止用フィルム被覆電子部品搭載基板を得た。
(Example 2C)
A sealing film and a sealing film-covered electronic component mounting substrate of Example 2C were obtained in the same manner as in Example 1C, except that the average thickness (μm) of the electromagnetic wave shielding layer 13 was 10 μm.
(実施例3C)
 電磁波シールド層13の平均厚さ(μm)を400μmとしたこと以外は、前記実施例1Cと同様にして実施例3Cの封止用フィルムおよび封止用フィルム被覆電子部品搭載基板を得た。
(Example 3C)
A sealing film and a sealing film-covered electronic component mounting substrate of Example 3C were obtained in the same manner as in Example 1C, except that the average thickness (μm) of the electromagnetic wave shielding layer 13 was 400 μm.
(実施例4C)
 電磁波シールド層13に含まれる樹脂材料を20重量部とし導電性粒子を80重量部とし、さらに、電磁波シールド層13の平均厚さ(μm)を10μmとしたこと以外は、前記実施例1Cと同様にして実施例4Cの封止用フィルムおよび封止用フィルム被覆電子部品搭載基板を得た。
(Example 4C)
The same as Example 1C except that the resin material contained in the electromagnetic wave shielding layer 13 is 20 parts by weight, the conductive particles are 80 parts by weight, and the average thickness (μm) of the electromagnetic wave shielding layer 13 is 10 μm. Thus, the sealing film of Example 4C and the sealing film-coated electronic component mounting substrate were obtained.
(実施例5C)
 電磁波シールド層13の平均厚さ(μm)を400μmとしたこと以外は、前記実施例4Cと同様にして実施例5Cの封止用フィルムおよび封止用フィルム被覆電子部品搭載基板を得た。
(Example 5C)
A sealing film and a sealing film-covered electronic component mounting substrate of Example 5C were obtained in the same manner as in Example 4C, except that the average thickness (μm) of the electromagnetic wave shielding layer 13 was 400 μm.
(実施例6C)
 電磁波シールド層13に含まれる樹脂材料として、接着樹脂(三井化学製、「アドマーNF536」)を用意したこと以外は前記実施例1Cと同様にして実施例6Cの封止用フィルムおよび封止用フィルム被覆電子部品搭載基板を得た。
(Example 6C)
The sealing film and the sealing film of Example 6C were the same as Example 1C except that an adhesive resin (“Admer NF536” manufactured by Mitsui Chemicals) was prepared as the resin material included in the electromagnetic wave shielding layer 13. A coated electronic component mounting substrate was obtained.
(実施例7C)
 絶縁層12を構成する樹脂材料として、接着樹脂(三井化学製、「アドマーNF536」)を用意したこと以外は前記実施例1Cと同様にして実施例7Cの封止用フィルムおよび封止用フィルム被覆電子部品搭載基板を得た。
(Example 7C)
The sealing film and sealing film covering of Example 7C were the same as Example 1C except that an adhesive resin (“Admer NF536” manufactured by Mitsui Chemicals) was prepared as the resin material constituting the insulating layer 12. An electronic component mounting board was obtained.
(実施例8C)
 絶縁層12を構成する樹脂材料として、ポリオレフィン樹脂(「ノーブレンFS2011DG2」、密度0.900g/cm、メルトインデックス2.0g/10min(230℃測定)、融点160℃)を用意し、形成する絶縁層12の平均厚さ(μm)を50μmとしたこと以外は前記実施例1Cと同様にして実施例8Cの封止用フィルムおよび封止用フィルム被覆電子部品搭載基板を得た。
(Example 8C)
As a resin material constituting the insulating layer 12, a polyolefin resin (“Noblen FS2011DG2”, density 0.900 g / cm 3 , melt index 2.0 g / 10 min (230 ° C. measurement), melting point 160 ° C.) is prepared and formed. A sealing film and a sealing film-covered electronic component mounting substrate of Example 8C were obtained in the same manner as in Example 1C except that the average thickness (μm) of the layer 12 was 50 μm.
(実施例9C)
 封止用フィルムを以下のようにして製造したこと以外は、前記実施例1Cと同様にして、基板と電子部品とが封止用フィルムが備える絶縁層12で被覆され、折り込まれた積層突出部65で基板の下面側の端部51が被覆された実施例9Cの封止用フィルム被覆電子部品搭載基板を得た。
(Example 9C)
Except that the sealing film was manufactured as described below, the laminated protrusions in which the substrate and the electronic component were covered with the insulating layer 12 included in the sealing film and folded in the same manner as in Example 1C. The sealing film-covered electronic component mounting substrate of Example 9C in which the lower end 51 of the substrate was covered with 65 was obtained.
<封止用フィルムの製造>
 封止用フィルムを得るために、形成すべき封止用フィルムの各層を構成する樹脂として、それぞれ、以下に示すものを用意した。
<Manufacture of sealing film>
In order to obtain the sealing film, the following resins were prepared as the resins constituting each layer of the sealing film to be formed.
 まず、絶縁層12および被覆層14を構成する樹脂材料として、ポリオレフィン樹脂(「ノーブレンFS2011DG2」、密度0.900g/cm、メルトインデックス2.0g/10min(230℃測定)、融点160℃)を用意した。 First, a polyolefin resin (“Noblen FS2011DG2”, density 0.900 g / cm 3 , melt index 2.0 g / 10 min (230 ° C. measurement), melting point 160 ° C.) is used as a resin material constituting the insulating layer 12 and the coating layer 14. Prepared.
 また、電磁波シールド層13に含まれる樹脂材料として、アイオノマー樹脂(三井デュポンポリケミカル製、「ハイミラン1855」、密度0.940kg/m、MFR1.3g/10min(190℃測定)、融点97℃)を用意した。 In addition, as a resin material included in the electromagnetic wave shielding layer 13, an ionomer resin (manufactured by Mitsui DuPont Polychemical, “Himiran 1855”, density 0.940 kg / m 3 , MFR 1.3 g / 10 min (measured at 190 ° C.), melting point 97 ° C.) Prepared.
 さらに、電磁波シールド層13に含まれる導電性粒子として、銀からなる球状粒子(福田金属箔粉工業製、「Ag-XF301」、50%粒子径4~7μm)を用意した。 Furthermore, spherical particles made of silver (“Ag-XF301”, 50% particle diameter 4 to 7 μm, manufactured by Fukuda Metal Foil Powder Industry) were prepared as conductive particles contained in the electromagnetic wave shielding layer 13.
 次に、絶縁層12を構成する樹脂を用いて押出成形法により絶縁層12を成膜した。その後、電磁波シールド層13に含まれる樹脂材料を45重量部と導電性粒子を55重量部との溶剤混合物を用いてコンマコーターにより絶縁層12上に、突出部16が形成されるように、電磁波シールド層13を塗工成膜した。さらに、被覆層14を構成する樹脂を用いてコンマコーターにより電磁波シールド層13上に、突出部15が形成されるように、被覆層14を塗工成膜し、上記絶縁層12、電磁波シールド層13および被覆層14をラミネーターにより貼り合わせた。これにより、図21に示すような、被覆層14/電磁波シールド層13/絶縁層12の順に積層された積層体で構成され、縁部に積層突出部65を備える実施例9Cの封止用フィルムを得た。 Next, the insulating layer 12 was formed by extrusion molding using a resin constituting the insulating layer 12. Thereafter, the electromagnetic wave is applied so that the protrusion 16 is formed on the insulating layer 12 by a comma coater using a solvent mixture of 45 parts by weight of the resin material contained in the electromagnetic wave shielding layer 13 and 55 parts by weight of the conductive particles. The shield layer 13 was formed by coating. Further, the coating layer 14 is applied and formed on the electromagnetic wave shielding layer 13 by a comma coater using a resin constituting the coating layer 14 so that the protruding portion 15 is formed, and the insulating layer 12 and the electromagnetic wave shielding layer are formed. 13 and the coating layer 14 were bonded together using a laminator. Thus, as shown in FIG. 21, the sealing film of Example 9C, which is composed of a laminated body in which the coating layer 14 / electromagnetic wave shielding layer 13 / insulating layer 12 are laminated in this order, and has the laminated protrusion 65 at the edge portion. Got.
 なお、得られた実施例9Cの封止用フィルムの各層の平均厚さ(μm)は、それぞれ、被覆層14/電磁波シールド層13/絶縁層12で50/100/50μmであり、合計厚さは、200μmであり、積層突出部65の長さは、2.0cmであった。 The average thickness (μm) of each layer of the sealing film of Example 9C obtained was 50/100/50 μm for the covering layer 14 / electromagnetic wave shielding layer 13 / insulating layer 12, respectively, and the total thickness Was 200 μm, and the length of the laminated protrusion 65 was 2.0 cm.
 また、実施例9Cの封止用フィルムの軟化点における伸び率を測定したところ3400%であった。 Further, when the elongation percentage at the softening point of the sealing film of Example 9C was measured, it was 3400%.
 さらに、実施例9Cの封止用フィルムにおける、25℃以上80℃以下の温度範囲での線膨張率を測定したところ、6ppm/Kであった。 Furthermore, when the linear expansion coefficient in the temperature range of 25 ° C. or higher and 80 ° C. or lower in the sealing film of Example 9C was measured, it was 6 ppm / K.
(比較例1C)
 比較例1Cとして、市販の二軸延伸PETフィルム(東洋紡社製、銘柄:E5107)を用意した。
(Comparative Example 1C)
As Comparative Example 1C, a commercially available biaxially stretched PET film (manufactured by Toyobo Co., Ltd., brand: E5107) was prepared.
<評価試験>
 各実施例(実施例1C~9C)および比較例(比較例1C)で作製した封止用フィルムまたは封止用フィルム被覆電子部品搭載基板について、前述した実施例1A~8Aに対して行った評価方法を用いて、形状追従性、シワの発生の有無および電磁波シールド性の評価を行った。また、各実施例および比較例で作製した封止用フィルムまたは封止用フィルム被覆電子部品搭載基板について、端部被覆性を以下の評価方法を用いて評価した。
<Evaluation test>
Evaluation performed on the above-described Examples 1A to 8A for the sealing film or the film-coated electronic component mounting substrate prepared in each Example (Examples 1C to 9C) and Comparative Example (Comparative Example 1C) The method was used to evaluate shape followability, the presence or absence of wrinkles, and electromagnetic shielding properties. Moreover, about the sealing film produced by each Example and the comparative example or the film covering electronic component mounting board | substrate for sealing, edge part coverage was evaluated using the following evaluation methods.
<<端部被覆性>>
 端部被覆性(形状追従性)は、以下のようにして評価した。
<< End coverage >>
The end coverage (shape followability) was evaluated as follows.
 すなわち、各実施例および比較例で作製した封止用フィルム被覆電子部品搭載基板について、積層突出部による基板の下面の端部における被覆での剥離の有無により、以下の評価基準に基づいて判断した。なお、剥離の有無は、顕微鏡を用いて観察した。 That is, the sealing film-covered electronic component mounting substrate produced in each Example and Comparative Example was judged based on the following evaluation criteria, depending on whether or not there was peeling at the end of the lower surface of the substrate by the laminated protrusions. . In addition, the presence or absence of peeling was observed using a microscope.
 各符号は以下のとおりであり、Aを合格とし、Bを不合格とした。
 A:下面の端部において積層突出部の剥離が認められない
 B:下面の端部において積層突出部の剥離が認められる
 各実施例および参考例の評価試験の結果を表3に示す。
Each code | symbol is as follows, A was set as the pass and B was set as the failure.
A: No peeling of the laminate protrusion at the end of the lower surface B: No peeling of the laminate protrusion at the end of the lower surface Table 3 shows the results of the evaluation tests of the examples and reference examples.
Figure JPOXMLDOC01-appb-T000003
Figure JPOXMLDOC01-appb-T000003
 表3から明らかなように、実施例1C~9Cの封止用フィルムでは、軟化点における伸び率が150%以上3500%以下であることにより、凹部の底部における空隙、さらには封止用フィルムの上面におけるシワの発生を抑制または防止して、電子部品搭載基板に対して被覆することが可能であった。また、積層突出部を折り込むことで、積層突出部による基板の下面における端部の被覆が可能であった。 As is clear from Table 3, in the sealing films of Examples 1C to 9C, the elongation at the softening point was 150% or more and 3500% or less, so that the voids at the bottom of the recesses, and further the sealing film The generation of wrinkles on the upper surface can be suppressed or prevented, and the electronic component mounting substrate can be coated. Further, by folding the laminated protrusion, it was possible to cover the end portion of the lower surface of the substrate with the laminated protrusion.
 これに対して、比較例1Cの封止用フィルムでは、軟化点における伸び率が150%未満であり、これに起因して、封止用フィルムによる電子部品搭載基板に対する被覆の際に、凹部の底部における空隙、封止用フィルムの上面におけるシワ、さらには、積層突出部と基板下面の端部との間における剥離が明らかに発生する結果となった。 On the other hand, in the sealing film of Comparative Example 1C, the elongation at the softening point is less than 150%, and due to this, when covering the electronic component mounting substrate with the sealing film, As a result, gaps at the bottom, wrinkles on the top surface of the sealing film, and separation between the laminated protrusion and the end of the bottom surface of the substrate were clearly generated.
(実施例1D)
<封止用フィルムの製造>
 封止用フィルムを得るために、形成すべき封止用フィルムの各層を構成する樹脂として、それぞれ、以下に示すものを用意した。
(Example 1D)
<Manufacture of sealing film>
In order to obtain the sealing film, the following resins were prepared as the resins constituting each layer of the sealing film to be formed.
 まず、絶縁層(最内層)12を構成する樹脂材料として、アイオノマー樹脂(三井デュポンポリケミカル製、「ハイミラン1855」、密度0.940kg/m、MFR1.3g/10min(190℃測定)、融点97℃)を用意した。 First, as a resin material constituting the insulating layer (innermost layer) 12, an ionomer resin (manufactured by Mitsui DuPont Polychemicals, “Himiran 1855”, density 0.940 kg / m 3 , MFR 1.3 g / 10 min (measured at 190 ° C.), melting point 97 ° C.) was prepared.
 また、電磁波シールド層13に含まれる樹脂材料として、アイオノマー樹脂(三井デュポンポリケミカル製、「ハイミラン1855」、密度0.940kg/m、MFR1.3g/10min(190℃測定)、融点97℃)を用意した。 In addition, as a resin material included in the electromagnetic wave shielding layer 13, an ionomer resin (manufactured by Mitsui DuPont Polychemical, “Himiran 1855”, density 0.940 kg / m 3 , MFR 1.3 g / 10 min (measured at 190 ° C.), melting point 97 ° C.) Prepared.
 さらに、電磁波シールド層13に含まれる導電性粒子として、銀からなる球状粒子(福田金属箔粉工業製、「Ag-XF301」、50%粒子径4~7μm)を用意した。 Furthermore, spherical particles made of silver (“Ag-XF301”, 50% particle diameter 4 to 7 μm, manufactured by Fukuda Metal Foil Powder Industry) were prepared as conductive particles contained in the electromagnetic wave shielding layer 13.
 次に、絶縁層12を構成する樹脂を用いて押出成形法により絶縁層12を成膜した。その後、電磁波シールド層13に含まれる樹脂材料を45重量部と導電性粒子を55重量部との溶剤混合物を用いてコンマコーターにより絶縁層12上に電磁波シールド層13を塗工成膜した。次に、上記絶縁層12および上記電磁波シールド層13をラミネーターにより貼り合わせることによって、絶縁層12/電磁波シールド層13の順に積層された積層体を形成した後、この積層体の端部を切り取ることで逃げ部27を形成し、その後、絶縁層12の縁部を、エッチング法を用いて除去した。これにより、図41に示すような、突出部17を備える絶縁層12と電磁波シールド層13とで構成され、逃げ部27を有する積層体からなる実施例1Dの封止用フィルムを得た。 Next, the insulating layer 12 was formed by extrusion molding using a resin constituting the insulating layer 12. Thereafter, the electromagnetic wave shielding layer 13 was applied and formed on the insulating layer 12 by a comma coater using a solvent mixture of 45 parts by weight of the resin material contained in the electromagnetic wave shielding layer 13 and 55 parts by weight of the conductive particles. Next, the insulating layer 12 and the electromagnetic wave shielding layer 13 are bonded together by a laminator to form a laminated body in which the insulating layer 12 / the electromagnetic wave shielding layer 13 are laminated in this order, and then the end of the laminated body is cut off. Then, the relief portion 27 was formed, and then the edge portion of the insulating layer 12 was removed using an etching method. As a result, as shown in FIG. 41, the sealing film of Example 1D, which is composed of the insulating layer 12 including the protruding portion 17 and the electromagnetic wave shielding layer 13 and is formed of a laminate having the escape portion 27, was obtained.
 なお、得られた実施例1Dの封止用フィルムの各層の平均厚さ(μm)は、それぞれ、電磁波シールド層13/絶縁層12で100/100μmであり、合計厚さは、200μmであり、絶縁層12の端部を越えて突出する突出部17の長さは、2.0cmであった。 In addition, the average thickness (μm) of each layer of the obtained sealing film of Example 1D is 100/100 μm respectively in the electromagnetic wave shielding layer 13 / insulating layer 12, and the total thickness is 200 μm. The length of the protruding portion 17 protruding beyond the end portion of the insulating layer 12 was 2.0 cm.
 また、実施例1Dの封止用フィルムの軟化点における伸び率を測定したところ880%であった。 Further, the elongation at the softening point of the sealing film of Example 1D was measured and found to be 880%.
 さらに、実施例1Dの封止用フィルムにおける、25℃以上80℃以下の温度範囲での線膨張率を測定したところ、51ppm/Kであった。 Furthermore, when the linear expansion coefficient in the temperature range of 25 degreeC or more and 80 degrees C or less in the film for sealing of Example 1D was measured, it was 51 ppm / K.
<封止用フィルム被覆電子部品搭載基板の製造>
 まず、基板上の中央部に電子部品が搭載されるとともに、その縁部に接続部材が搭載され、さらに、基板の下面の縁部に電極が形成された任意の電子部品搭載基板を用意し、その後、スキンパック包装機(ハイパック社製、「HI-750シリーズ」)が備えるチャンバー内において、電子部品搭載基板が有する基板と電子部品とを覆い、かつ、接続部材が逃げ部から露出するように形成された実施例1Dの封止用フィルム100を、絶縁層12を電子部品搭載基板45側にして配置し、さらに、突出部17を、基板5の下面側に折り込むことで電極3に接触させた。
<Manufacture of film-coated electronic component mounting substrate for sealing>
First, an electronic component is mounted on the central portion of the substrate, a connection member is mounted on the edge portion thereof, and an arbitrary electronic component mounting substrate having electrodes formed on the edge portion of the lower surface of the substrate is prepared, Thereafter, in the chamber of the skin pack packaging machine (“HI-750 series” manufactured by Hipack Co., Ltd.), the electronic component mounting substrate and the electronic component are covered, and the connection member is exposed from the escape portion. The sealing film 100 of Example 1D formed in the above is disposed with the insulating layer 12 facing the electronic component mounting substrate 45 side, and the protruding portion 17 is further folded into the lower surface side of the substrate 5 to contact the electrode 3 I let you.
 次に、封止用フィルムを加熱し軟化させるとともに、チャンバー内を減圧した。なお、封止用フィルムを加熱した温度は125℃であり、チャンバーの圧力は0.4kPaであり、かかる加熱・減圧の条件を1分間保持した。 Next, the sealing film was heated and softened, and the pressure in the chamber was reduced. In addition, the temperature which heated the film for sealing was 125 degreeC, the pressure of the chamber was 0.4 kPa, and the conditions of this heating and pressure reduction were hold | maintained for 1 minute.
 次に、チャンバー内を常温・常圧に戻すことで、封止用フィルムを冷却するとともに、チャンバー内を加圧した。これにより、接続部材が逃げ部から露出した状態で、基板と電子部品とが封止用フィルムが備える絶縁層で被覆され、さらに、封止用フィルムが備える電磁波シールド層で電極が被覆された実施例1Dの封止用フィルム被覆電子部品搭載基板を得た。 Next, by returning the inside of the chamber to room temperature and normal pressure, the sealing film was cooled and the inside of the chamber was pressurized. In this way, with the connecting member exposed from the escape portion, the substrate and the electronic component are covered with the insulating layer provided in the sealing film, and the electrode is further covered with the electromagnetic wave shielding layer provided in the sealing film. A film-coated electronic component mounting substrate for sealing of Example 1D was obtained.
(実施例2D)
 電磁波シールド層13の平均厚さ(μm)を10μmとしたこと以外は、前記実施例1Dと同様にして実施例2Dの封止用フィルムおよび封止用フィルム被覆電子部品搭載基板を得た。
(Example 2D)
A sealing film and a sealing film-covered electronic component mounting substrate of Example 2D were obtained in the same manner as in Example 1D, except that the average thickness (μm) of the electromagnetic wave shielding layer 13 was 10 μm.
(実施例3D)
 電磁波シールド層13の平均厚さ(μm)を400μmとしたこと以外は、前記実施例1Dと同様にして実施例3Dの封止用フィルムおよび封止用フィルム被覆電子部品搭載基板を得た。
Example 3D
A sealing film and a sealing film-covered electronic component mounting substrate of Example 3D were obtained in the same manner as in Example 1D except that the average thickness (μm) of the electromagnetic wave shielding layer 13 was 400 μm.
(実施例4D)
 電磁波シールド層13に含まれる樹脂材料を20重量部とし導電性粒子を80重量部とし、さらに、電磁波シールド層13の平均厚さ(μm)を10μmとしたこと以外は、前記実施例1Dと同様にして実施例4Dの封止用フィルムおよび封止用フィルム被覆電子部品搭載基板を得た。
(Example 4D)
The same as Example 1D except that the resin material contained in the electromagnetic wave shielding layer 13 is 20 parts by weight, the conductive particles are 80 parts by weight, and the average thickness (μm) of the electromagnetic wave shielding layer 13 is 10 μm. Thus, the sealing film of Example 4D and the sealing film-coated electronic component mounting substrate were obtained.
(実施例5D)
 電磁波シールド層13の平均厚さ(μm)を400μmとしたこと以外は、前記実施例4Dと同様にして実施例5Dの封止用フィルムおよび封止用フィルム被覆電子部品搭載基板を得た。
(Example 5D)
A sealing film and a sealing film-covered electronic component mounting substrate of Example 5D were obtained in the same manner as in Example 4D except that the average thickness (μm) of the electromagnetic wave shielding layer 13 was 400 μm.
(実施例6D)
 電磁波シールド層13に含まれる樹脂材料として、接着樹脂(三井化学製、「アドマーNF536」)を用意したこと以外は前記実施例1Dと同様にして実施例6Dの封止用フィルムおよび封止用フィルム被覆電子部品搭載基板を得た。
(Example 6D)
The sealing film and sealing film of Example 6D were the same as Example 1D except that an adhesive resin (“Admer NF536” manufactured by Mitsui Chemicals) was prepared as the resin material included in the electromagnetic wave shielding layer 13. A coated electronic component mounting substrate was obtained.
(実施例7)
 絶縁層12を構成する樹脂材料として、接着樹脂(三井化学製、「アドマーNF536」)を用意したこと以外は前記実施例1Dと同様にして実施例7Dの封止用フィルムおよび封止用フィルム被覆電子部品搭載基板を得た。
(Example 7)
The sealing film and sealing film covering of Example 7D were the same as Example 1D except that an adhesive resin (“Admer NF536” manufactured by Mitsui Chemicals) was prepared as the resin material constituting the insulating layer 12. An electronic component mounting board was obtained.
(実施例8)
 絶縁層12を構成する樹脂材料として、ポリオレフィン樹脂(「ノーブレンFS2011DG2」、密度0.900g/cm、メルトインデックス2.0g/10min(230℃測定)、融点160℃)を用意し、形成する絶縁層12の平均厚さ(μm)を50μmとしたこと以外は前記実施例1Dと同様にして実施例8Dの封止用フィルムおよび封止用フィルム被覆電子部品搭載基板を得た。
(Example 8)
As a resin material constituting the insulating layer 12, a polyolefin resin (“Noblen FS2011DG2”, density 0.900 g / cm 3 , melt index 2.0 g / 10 min (230 ° C. measurement), melting point 160 ° C.) is prepared and formed. A sealing film and a sealing film-covered electronic component mounting substrate of Example 8D were obtained in the same manner as in Example 1D except that the average thickness (μm) of the layer 12 was 50 μm.
(実施例9D)
 封止用フィルムを以下のようにして製造したこと以外は、前記実施例1Dと同様にして、接続部材が逃げ部から露出した状態で、基板と電子部品とが封止用フィルムが備える絶縁層で被覆され、さらに、封止用フィルムが備える電磁波シールド層で電極が被覆された実施例9Dの封止用フィルム被覆電子部品搭載基板を得た。
(Example 9D)
Except that the sealing film was manufactured as follows, the insulating layer provided in the sealing film on the substrate and the electronic component with the connecting member exposed from the escape portion in the same manner as in Example 1D In addition, the sealing film-covered electronic component mounting substrate of Example 9D in which the electrode was covered with the electromagnetic wave shielding layer included in the sealing film was obtained.
<封止用フィルムの製造>
 封止用フィルムを得るために、形成すべき封止用フィルムの各層を構成する樹脂として、それぞれ、以下に示すものを用意した。
<Manufacture of sealing film>
In order to obtain the sealing film, the following resins were prepared as the resins constituting each layer of the sealing film to be formed.
 まず、絶縁層12および被覆層(最外層)14を構成する樹脂材料として、ポリオレフィン樹脂(「ノーブレンFS2011DG2」、密度0.900g/cm、メルトインデックス2.0g/10min(230℃測定)、融点160℃)を用意した。 First, as a resin material constituting the insulating layer 12 and the coating layer (outermost layer) 14, polyolefin resin (“Noblen FS2011DG2”, density 0.900 g / cm 3 , melt index 2.0 g / 10 min (230 ° C. measurement), melting point 160 ° C.).
 また、電磁波シールド層13に含まれる樹脂材料として、アイオノマー樹脂(三井デュポンポリケミカル製、「ハイミラン1855」、密度0.940kg/m、MFR1.3g/10min(190℃測定)、融点97℃)を用意した。 In addition, as a resin material included in the electromagnetic wave shielding layer 13, an ionomer resin (manufactured by Mitsui DuPont Polychemical, “Himiran 1855”, density 0.940 kg / m 3 , MFR 1.3 g / 10 min (measured at 190 ° C.), melting point 97 ° C.) Prepared.
 さらに、電磁波シールド層13に含まれる導電性粒子として、銀からなる球状粒子(福田金属箔粉工業製、「Ag-XF301」、50%粒子径4~7μm)を用意した。 Furthermore, spherical particles made of silver (“Ag-XF301”, 50% particle diameter 4 to 7 μm, manufactured by Fukuda Metal Foil Powder Industry) were prepared as conductive particles contained in the electromagnetic wave shielding layer 13.
 次に、絶縁層12を構成する樹脂を用いて押出成形法により絶縁層12を成膜した。その後、電磁波シールド層13に含まれる樹脂材料を45重量部と導電性粒子を55重量部との溶剤混合物を用いてコンマコーターにより絶縁層12上に電磁波シールド層13を塗工成膜した。さらに、被覆層14を構成する樹脂を用いてコンマコーターにより被覆層14を電磁波シールド層13上に塗工成膜した。その後、上記絶縁層12、電磁波シールド層13および被覆層14をラミネーターにより貼り合わせることによって、被覆層14/電磁波シールド層13/絶縁層12の順に積層された積層体を形成した後、この積層体の端部を切り取ることで逃げ部27を形成し、その後、絶縁層12の縁部を、エッチング法を用いて除去した。これにより、図39に示すような、突出部17を備える絶縁層12と電磁波シールド層13と被覆層14とで構成され、逃げ部27を有する積層体からなる実施例9Dの封止用フィルムを得た。 Next, the insulating layer 12 was formed by extrusion molding using a resin constituting the insulating layer 12. Thereafter, the electromagnetic wave shielding layer 13 was applied and formed on the insulating layer 12 by a comma coater using a solvent mixture of 45 parts by weight of the resin material contained in the electromagnetic wave shielding layer 13 and 55 parts by weight of the conductive particles. Further, the coating layer 14 was formed on the electromagnetic wave shielding layer 13 by a comma coater using a resin constituting the coating layer 14. Thereafter, the insulating layer 12, the electromagnetic wave shielding layer 13 and the covering layer 14 are bonded together with a laminator to form a laminated body in which the covering layer 14 / the electromagnetic wave shielding layer 13 / the insulating layer 12 are laminated in this order. The end portion of the insulating layer 12 was cut off to form the escape portion 27, and then the edge portion of the insulating layer 12 was removed using an etching method. Thus, as shown in FIG. 39, the sealing film of Example 9D composed of the insulating layer 12 including the projecting portion 17, the electromagnetic wave shielding layer 13, and the covering layer 14 and including the laminate having the escape portion 27 is formed. Obtained.
 なお、得られた実施例9Dの封止用フィルムの各層の平均厚さ(μm)は、それぞれ、絶縁層12/電磁波シールド層13/被覆層14で50/100/50μmであり、合計厚さは、200μmであり、絶縁層12の端部を越えて突出する突出部17の長さは、2.0cmであった。 The average thickness (μm) of each layer of the sealing film of Example 9D obtained was 50/100/50 μm for the insulating layer 12 / electromagnetic wave shield layer 13 / covering layer 14 respectively, and the total thickness. Is 200 μm, and the length of the protruding portion 17 protruding beyond the end portion of the insulating layer 12 was 2.0 cm.
 また、実施例9Dの封止用フィルムの軟化点における伸び率を測定したところ3400%であった。 Further, when the elongation percentage at the softening point of the sealing film of Example 9D was measured, it was 3400%.
 さらに、実施例9Dの封止用フィルムにおける、25℃以上80℃以下の温度範囲での線膨張率を測定したところ、6ppm/Kであった。 Furthermore, when the linear expansion coefficient in the temperature range of 25 ° C. or higher and 80 ° C. or lower in the sealing film of Example 9D was measured, it was 6 ppm / K.
(参考例1D)
 参考例1Dとして、市販の二軸延伸PETフィルム(東洋紡社製、銘柄:E5107)を用意した。
(Reference Example 1D)
As Reference Example 1D, a commercially available biaxially stretched PET film (manufactured by Toyobo Co., Ltd., brand: E5107) was prepared.
<評価試験>
 各実施例(実施例1D~9D)および参考例(参考例1D)で作製した封止用フィルムまたは封止用フィルム被覆電子部品搭載基板について、前述した実施例1A~8Aに対して行った評価方法を用いて、形状追従性、シワの発生の有無、電磁波シールド性および導電性の評価を行った。
 各実施例および参考例の評価試験の結果を表4に示す。
<Evaluation test>
Evaluation performed on the above-described Examples 1A to 8A for the sealing film or the film-coated electronic component mounting substrate prepared in each Example (Examples 1D to 9D) and Reference Example (Reference Example 1D) Using the method, shape followability, presence / absence of wrinkles, electromagnetic shielding properties and conductivity were evaluated.
Table 4 shows the results of the evaluation tests of the examples and reference examples.
Figure JPOXMLDOC01-appb-T000004
Figure JPOXMLDOC01-appb-T000004
 表4から明らかなように、実施例1D~9Dの封止用フィルムでは、軟化点における伸び率が150%以上3500%以下であることにより、凹部の底部における空隙、さらには封止用フィルムの上面におけるシワの発生を抑制または防止して、電子部品搭載基板に対して被覆することが可能であった。また、電磁波シールド層が備える突出部を介した、外部電源と電極間の導通を確認することができた。 As is apparent from Table 4, in the sealing films of Examples 1D to 9D, the elongation at the softening point is 150% or more and 3500% or less, so that the gap at the bottom of the recess, and further the sealing film The generation of wrinkles on the upper surface can be suppressed or prevented, and the electronic component mounting substrate can be coated. Moreover, the electrical continuity between the external power source and the electrode could be confirmed through the protrusion provided in the electromagnetic wave shielding layer.
 これに対して、参考例1Dの封止用フィルムでは、軟化点における伸び率が150%未満であり、これに起因して、封止用フィルムによる電子部品搭載基板に対する被覆の際に、凹部の底部における空隙および封止用フィルムの上面におけるシワが明らかに発生する結果となった。 On the other hand, in the sealing film of Reference Example 1D, the elongation at the softening point is less than 150%, and due to this, when covering the electronic component mounting substrate with the sealing film, As a result, voids at the bottom and wrinkles on the top surface of the sealing film were clearly generated.
(実施例1E)
<封止用フィルムの製造>
 封止用フィルムを得るために、形成すべき封止用フィルムの各層を構成する樹脂として、それぞれ、以下に示すものを用意した。
(Example 1E)
<Manufacture of sealing film>
In order to obtain the sealing film, the following resins were prepared as the resins constituting each layer of the sealing film to be formed.
 まず、絶縁層12を構成する樹脂材料として、アイオノマー樹脂(三井デュポンポリケミカル製、「ハイミラン1855」、密度0.940kg/m、MFR1.3g/10min(190℃測定)、融点97℃)を用意した。 First, an ionomer resin (manufactured by Mitsui DuPont Polychemical, “Himiran 1855”, density 0.940 kg / m 3 , MFR 1.3 g / 10 min (measured at 190 ° C.), melting point 97 ° C.) is used as a resin material constituting the insulating layer 12. Prepared.
 また、電磁波シールド層13に含まれる樹脂材料として、アイオノマー樹脂(三井デュポンポリケミカル製、「ハイミラン1855」、密度0.940kg/m、MFR1.3g/10min(190℃測定)、融点97℃)を用意した。 In addition, as a resin material included in the electromagnetic wave shielding layer 13, an ionomer resin (manufactured by Mitsui DuPont Polychemical, “Himiran 1855”, density 0.940 kg / m 3 , MFR 1.3 g / 10 min (measured at 190 ° C.), melting point 97 ° C.) Prepared.
 さらに、電磁波シールド層13に含まれる導電性粒子として、銀からなる球状粒子(福田金属箔粉工業製、「Ag-XF301」、50%粒子径4~7μm)を用意した。 Furthermore, spherical particles made of silver (“Ag-XF301”, 50% particle diameter 4 to 7 μm, manufactured by Fukuda Metal Foil Powder Industry) were prepared as conductive particles contained in the electromagnetic wave shielding layer 13.
 次に、絶縁層12を構成する樹脂を用いて押出成形法により絶縁層12を成膜した。また、電磁波シールド層13に含まれる樹脂材料を45重量部と導電性粒子を55重量部との溶剤混合物を用いてコンマコーターにより電磁波シールド層13を塗工成膜した。その後、上記絶縁層12および上記電磁波シールド層13をラミネーターにより貼り合わせることによって、電磁波シールド層13/絶縁層12の順に積層された積層体を形成した。その後、絶縁層12の縁部を、エッチング法を用いて除去した。これにより、図43に示すような、突出部15を備える電磁波シールド層13と絶縁層12とで構成される積層体からなる実施例1Eの封止用フィルムを得た。 Next, the insulating layer 12 was formed by extrusion molding using a resin constituting the insulating layer 12. In addition, the electromagnetic wave shielding layer 13 was formed by coating with a comma coater using a solvent mixture of 45 parts by weight of the resin material contained in the electromagnetic wave shielding layer 13 and 55 parts by weight of the conductive particles. Then, the laminated body laminated | stacked in order of the electromagnetic wave shielding layer 13 / insulating layer 12 was formed by bonding the said insulating layer 12 and the said electromagnetic wave shielding layer 13 with a laminator. Then, the edge part of the insulating layer 12 was removed using the etching method. This obtained the sealing film of Example 1E which consists of a laminated body comprised with the electromagnetic wave shielding layer 13 provided with the protrusion part 15 and the insulating layer 12 as shown in FIG.
 なお、得られた実施例1Eの封止用フィルムの各層の平均厚さ(μm)は、それぞれ、電磁波シールド層13/絶縁層12で100/100μmであり、合計厚さは、200μmであり、絶縁層12の端部を越えて突出する突出部15の長さは、2.0cmであった。 In addition, the average thickness (μm) of each layer of the obtained sealing film of Example 1E is 100/100 μm respectively in the electromagnetic wave shielding layer 13 / insulating layer 12, and the total thickness is 200 μm. The length of the protruding portion 15 protruding beyond the end portion of the insulating layer 12 was 2.0 cm.
 また、実施例1Eの封止用フィルムの軟化点における伸び率を測定したところ880%であった。 Further, the elongation at the softening point of the sealing film of Example 1E was measured and found to be 880%.
 さらに、実施例1Eの封止用フィルムにおける、25℃以上80℃以下の温度範囲での線膨張率を測定したところ、51ppm/Kであった。 Furthermore, when the linear expansion coefficient in the temperature range of 25 degreeC or more and 80 degrees C or less in the film for sealing of Example 1E was measured, it was 51 ppm / K.
<封止用フィルム被覆電子部品搭載基板の製造>
 まず、基板上に電子部品が搭載され、さらに、基板の下面の縁部に電極が形成された任意の電子部品搭載基板を用意し、その後、スキンパック包装機(ハイパック社製、「HI-750シリーズ」)が備えるチャンバー内において、電子部品搭載基板が有する基板と電子部品とを覆うように得られた実施例1Eの封止用フィルム100を、絶縁層12を電子部品搭載基板45側にして配置し、さらに、突出部15を、基板5の下面側に折り込むことで電極3に接触させた。
<Manufacture of film-coated electronic component mounting substrate for sealing>
First, an electronic component mounting board having an electronic component mounted on the substrate and electrodes formed on the edge of the lower surface of the substrate is prepared, and then a skin pack packaging machine ("HI-" manufactured by Hipack Co., Ltd.) is prepared. 750 series "), the sealing film 100 of Example 1E obtained so as to cover the electronic component mounting substrate and the electronic component mounting substrate is placed on the electronic component mounting substrate 45 side. Furthermore, the protrusion 15 was brought into contact with the electrode 3 by folding it into the lower surface side of the substrate 5.
 次に、封止用フィルムを加熱し軟化させるとともに、チャンバー内を減圧した。なお、封止用フィルムを加熱した温度は125℃であり、チャンバー内の圧力は0.4kPaであり、かかる加熱・減圧の条件を1分間保持した。 Next, the sealing film was heated and softened, and the pressure in the chamber was reduced. In addition, the temperature which heated the film for sealing was 125 degreeC, the pressure in a chamber was 0.4 kPa, and the conditions of this heating and pressure reduction were hold | maintained for 1 minute.
 次に、チャンバー内を常温・常圧に戻すことで、封止用フィルムを冷却するとともに、チャンバー内を加圧した。これにより、基板と電子部品とが封止用フィルムが備える絶縁層で被覆され、電極が、封止用フィルムが備える電磁波シールド層で被覆された実施例1Eの封止用フィルム被覆電子部品搭載基板を得た。 Next, by returning the inside of the chamber to room temperature and normal pressure, the sealing film was cooled and the inside of the chamber was pressurized. Thereby, the board | substrate and electronic component were coat | covered with the insulating layer with which the film for sealing is equipped, and the film was covered with the electromagnetic wave shielding layer with which the film for sealing was equipped with the film-coated electronic component mounting board for Example 1E Got.
(実施例2E)
 電磁波シールド層13の平均厚さ(μm)を10μmとしたこと以外は、前記実施例1Eと同様にして実施例2Eの封止用フィルムおよび封止用フィルム被覆電子部品搭載基板を得た。
(Example 2E)
A sealing film and a sealing film-covered electronic component mounting substrate of Example 2E were obtained in the same manner as in Example 1E, except that the average thickness (μm) of the electromagnetic wave shielding layer 13 was 10 μm.
(実施例3E)
 電磁波シールド層13の平均厚さ(μm)を400μmとしたこと以外は、前記実施例1Eと同様にして実施例3Eの封止用フィルムおよび封止用フィルム被覆電子部品搭載基板を得た。
(Example 3E)
A sealing film and a sealing film-covered electronic component mounting substrate of Example 3E were obtained in the same manner as in Example 1E except that the average thickness (μm) of the electromagnetic wave shielding layer 13 was 400 μm.
(実施例4E)
 電磁波シールド層13に含まれる樹脂材料を20重量部とし導電性粒子を80重量部とし、さらに、電磁波シールド層13の平均厚さ(μm)を10μmとしたこと以外は、前記実施例1Eと同様にして実施例4Eの封止用フィルムおよび封止用フィルム被覆電子部品搭載基板を得た。
(Example 4E)
The same as Example 1E except that the resin material contained in the electromagnetic wave shielding layer 13 is 20 parts by weight, the conductive particles are 80 parts by weight, and the average thickness (μm) of the electromagnetic wave shielding layer 13 is 10 μm. Thus, the sealing film of Example 4E and the sealing film-coated electronic component mounting substrate were obtained.
(実施例5E)
 電磁波シールド層13の平均厚さ(μm)を400μmとしたこと以外は、前記実施例4Eと同様にして実施例5Eの封止用フィルムおよび封止用フィルム被覆電子部品搭載基板を得た。
(Example 5E)
A sealing film and a sealing film-covered electronic component mounting substrate of Example 5E were obtained in the same manner as in Example 4E except that the average thickness (μm) of the electromagnetic wave shielding layer 13 was 400 μm.
(実施例6E)
 電磁波シールド層13に含まれる樹脂材料として、接着樹脂(三井化学製、「アドマーNF536」)を用意したこと以外は前記実施例1Eと同様にして実施例6Eの封止用フィルムおよび封止用フィルム被覆電子部品搭載基板を得た。
(Example 6E)
The sealing film and sealing film of Example 6E were the same as Example 1E except that an adhesive resin (“Admer NF536” manufactured by Mitsui Chemicals) was prepared as the resin material contained in the electromagnetic wave shielding layer 13. A coated electronic component mounting substrate was obtained.
(実施例7E)
 絶縁層12を構成する樹脂材料として、接着樹脂(三井化学製、「アドマーNF536」)を用意したこと以外は前記実施例1Eと同様にして実施例7Eの封止用フィルムおよび封止用フィルム被覆電子部品搭載基板を得た。
(Example 7E)
The sealing film and sealing film covering of Example 7E were prepared in the same manner as in Example 1E except that an adhesive resin (“Admer NF536” manufactured by Mitsui Chemicals) was prepared as the resin material constituting the insulating layer 12. An electronic component mounting board was obtained.
(実施例8E)
 絶縁層12を構成する樹脂材料として、ポリオレフィン樹脂(「ノーブレンFS2011DG2」、密度0.900g/cm、メルトインデックス2.0g/10min(230℃測定)、融点160℃)を用意し、形成する絶縁層12の平均厚さ(μm)を50μmとしたこと以外は前記実施例1Eと同様にして実施例8Eの封止用フィルムおよび封止用フィルム被覆電子部品搭載基板を得た。
(Example 8E)
As a resin material constituting the insulating layer 12, a polyolefin resin (“Noblen FS2011DG2”, density 0.900 g / cm 3 , melt index 2.0 g / 10 min (230 ° C. measurement), melting point 160 ° C.) is prepared and formed. A sealing film and a sealing film-covered electronic component mounting substrate of Example 8E were obtained in the same manner as in Example 1E except that the average thickness (μm) of the layer 12 was 50 μm.
(参考例1E)
 参考例1Eとして、市販の二軸延伸PETフィルム(東洋紡社製、銘柄:E5107)を用意した。
(Reference Example 1E)
As Reference Example 1E, a commercially available biaxially stretched PET film (manufactured by Toyobo Co., Ltd., brand: E5107) was prepared.
<評価試験>
 各実施例(実施例1E~8E)および参考例(参考例1E)で作製した封止用フィルムまたは封止用フィルム被覆電子部品搭載基板について、前述した実施例1A~8Aに対して行った評価方法を用いて、形状追従性、シワの発生の有無、電磁波シールド性および導電性の評価を行った。
 各実施例および参考例の評価試験の結果を表5に示す。
<Evaluation test>
Evaluations performed on the above-described Examples 1A to 8A for the sealing film or the film-coated electronic component mounting substrate prepared in each Example (Examples 1E to 8E) and Reference Example (Reference Example 1E) Using the method, shape followability, presence / absence of wrinkles, electromagnetic shielding properties and conductivity were evaluated.
Table 5 shows the results of the evaluation tests of the examples and reference examples.
Figure JPOXMLDOC01-appb-T000005
Figure JPOXMLDOC01-appb-T000005
 表5から明らかなように、実施例1E~8Eの封止用フィルムでは、軟化点における伸び率が150%以上3500%以下であることにより、凹部の底部における空隙、さらには封止用フィルムの上面におけるシワの発生を抑制または防止して、電子部品搭載基板に対して被覆することが可能であった。また、電磁波シールド層が備える突出部を介した、外部電源と電極間の導通を確認することができた。 As is clear from Table 5, in the sealing films of Examples 1E to 8E, the elongation at the softening point was 150% or more and 3500% or less, so that the gap at the bottom of the recess, and further the sealing film The generation of wrinkles on the upper surface can be suppressed or prevented, and the electronic component mounting substrate can be coated. Moreover, the electrical continuity between the external power source and the electrode could be confirmed through the protrusion provided in the electromagnetic wave shielding layer.
 これに対して、参考例の封止用フィルムでは、軟化点における伸び率が150%未満であり、これに起因して、封止用フィルムによる電子部品搭載基板に対する被覆の際に、凹部の底部における空隙および封止用フィルムの上面におけるシワが明らかに発生する結果となった。 On the other hand, in the sealing film of the reference example, the elongation at the softening point is less than 150%, and due to this, when the electronic component mounting substrate is covered with the sealing film, the bottom of the recess As a result, the voids and wrinkles on the upper surface of the sealing film were clearly generated.
 本発明によれば、封止用フィルムが樹脂材料を主材料として構成され、JIS K 6251に準拠して求められる軟化点における封止用フィルムの伸び率が150%以上3500%以下となっている。かかる封止用フィルムを、まず、基板と電子部品とを覆うように電子部品搭載基板上に配置する。その後、封止用フィルムを加熱し軟化させるとともに減圧する。その後、封止用フィルムを冷却させるとともに加圧する。以上の工程を経ることにより、封止用フィルムが、基板に電子部品を搭載することで形成される凹凸に対して、優れた追従性をもって封止した状態で、基板と電子部品とを被覆することができる。そのため、この封止用フィルムを被覆することで得られた封止用フィルム被覆電子部品搭載基板において、電子部品(特に、電子部品)が湿気や埃等の外部因子と接触するのを的確に抑制または防止することができる。また、封止用フィルムにより、基板と電子部品とを被覆する際に、電子部品は、絶縁層を介して電磁波シールド層で封止されるため、得られた封止用フィルム被覆電子部品搭載基板は、電子部品への電磁波によるノイズの影響が的確に抑制または防止されたものとなる。したがって、本発明は、産業上の利用可能性を有する。 According to the present invention, the sealing film is composed mainly of a resin material, and the elongation rate of the sealing film at the softening point required in accordance with JIS K 6251 is 150% or more and 3500% or less. . First, the sealing film is placed on the electronic component mounting substrate so as to cover the substrate and the electronic component. Thereafter, the sealing film is heated and softened, and the pressure is reduced. Thereafter, the sealing film is cooled and pressurized. Through the above steps, the sealing film covers the substrate and the electronic component in a state of sealing with excellent followability with respect to the unevenness formed by mounting the electronic component on the substrate. be able to. Therefore, in the sealing film-covered electronic component mounting substrate obtained by coating this sealing film, the electronic component (particularly, the electronic component) is accurately suppressed from coming into contact with external factors such as moisture and dust. Or it can be prevented. Further, when the substrate and the electronic component are covered with the sealing film, the electronic component is sealed with the electromagnetic wave shielding layer through the insulating layer, so that the obtained sealing film-covered electronic component mounting substrate is obtained. In this case, the influence of noise due to electromagnetic waves on the electronic component is appropriately suppressed or prevented. Therefore, the present invention has industrial applicability.

Claims (29)

  1.  基板と、該基板の一方の面側に搭載された電子部品とを備える電子部品搭載基板を封止するのに用いられる封止用フィルムであって、
     絶縁層と、該絶縁層の一方の面側に積層された電磁波シールド層とを有し、
     前記絶縁層および前記電磁波シールド層は、ともに、樹脂材料を含有し、当該封止用フィルムは、JIS K 6251に準拠して求められる軟化点における伸び率が150%以上3500%以下であることを特徴とする封止用フィルム。
    A sealing film used for sealing an electronic component mounting substrate comprising a substrate and an electronic component mounted on one surface side of the substrate,
    Having an insulating layer and an electromagnetic wave shielding layer laminated on one side of the insulating layer;
    Both the insulating layer and the electromagnetic wave shielding layer contain a resin material, and the sealing film has an elongation at a softening point required in accordance with JIS K 6251 of 150% or more and 3500% or less. A film for sealing.
  2.  前記電子部品搭載基板は、前記基板の一方の面側に設けられ、前記電子部品に電気的に接続された電極をさらに有し、
     前記電磁波シールド層は、前記絶縁層の端部を越えて突出する突出部を備えている請求項1に記載の封止用フィルム。
    The electronic component mounting substrate further includes an electrode provided on one surface side of the substrate and electrically connected to the electronic component,
    The sealing film according to claim 1, wherein the electromagnetic wave shielding layer includes a protruding portion that protrudes beyond an end portion of the insulating layer.
  3.  前記突出部は、前記電極に対応して形成され、前記電子部品搭載基板を封止する際に、前記電極に接触する請求項2に記載の封止用フィルム。 The sealing film according to claim 2, wherein the protruding portion is formed corresponding to the electrode and contacts the electrode when the electronic component mounting substrate is sealed.
  4.  前記電極は、前記基板の縁部、もしくは電子部品の周囲に設けられている請求項2または3に記載の封止用フィルム。 The sealing film according to claim 2 or 3, wherein the electrode is provided at an edge of the substrate or around an electronic component.
  5.  前記電極は、グランド電極である請求項2ないし4のいずれか1項に記載の封止用フィルム。 The sealing film according to any one of claims 2 to 4, wherein the electrode is a ground electrode.
  6.  当該封止用フィルムは、前記電磁波シールド層の前記絶縁層と反対側に積層された被覆層をさらに備え、
     前記絶縁層を前記基板の一方の面側にして、前記電子部品搭載基板を封止するように構成されている請求項1に記載の封止用フィルム。
    The sealing film further includes a coating layer laminated on the side opposite to the insulating layer of the electromagnetic wave shielding layer,
    The sealing film according to claim 1, wherein the electronic component mounting substrate is sealed with the insulating layer on one surface side of the substrate.
  7.  前記被覆層は、前記電磁波シールド層の端部を越えて突出する第1突出部を備え、前記基板の一方の面側から前記電子部品搭載基板を封止する際に、前記第1突出部は、前記基板の他方の面側に折り込まれることにより、前記基板の他方の面側を被覆するよう構成されている請求項6に記載の封止用フィルム。 The covering layer includes a first protruding portion protruding beyond the end portion of the electromagnetic wave shielding layer, and when sealing the electronic component mounting substrate from one surface side of the substrate, the first protruding portion is The sealing film according to claim 6, configured to cover the other surface side of the substrate by being folded on the other surface side of the substrate.
  8.  前記電子部品搭載基板は、前記基板の一方の面側に設けられ、前記電子部品に電気的に接続された電極をさらに備え、
     前記電磁波シールド層は、前記絶縁層の端部を越えて突出する第2突出部を備え、前記基板の一方の面側から前記電子部品搭載基板を封止する際に、前記第2突出部は、前記基板の一方の面側で前記電極に接触するよう構成されている請求項6または7に記載の封止用フィルム。
    The electronic component mounting substrate further includes an electrode provided on one surface side of the substrate and electrically connected to the electronic component,
    The electromagnetic wave shielding layer includes a second protruding portion that protrudes beyond an end portion of the insulating layer, and when the electronic component mounting substrate is sealed from one surface side of the substrate, the second protruding portion is The sealing film according to claim 6, wherein the sealing film is configured to come into contact with the electrode on one surface side of the substrate.
  9.  前記電子部品搭載基板は、前記基板の他方の面側に設けられ、前記電子部品に電気的に接続された電極をさらに備え、
     前記電磁波シールド層は、前記絶縁層の端部を越えて突出する第2突出部を備え、前記基板の一方の面側から前記電子部品搭載基板を封止する際に、前記第2突出部は、前記基板の他方の面側に折り込まれることにより、前記基板の他方の面側で前記電極に接触するよう構成されている請求項6または7に記載の封止用フィルム。
    The electronic component mounting substrate further includes an electrode provided on the other surface side of the substrate and electrically connected to the electronic component,
    The electromagnetic wave shielding layer includes a second protruding portion that protrudes beyond an end portion of the insulating layer, and when the electronic component mounting substrate is sealed from one surface side of the substrate, the second protruding portion is The sealing film according to claim 6, wherein the sealing film is configured to be in contact with the electrode on the other surface side of the substrate by being folded on the other surface side of the substrate.
  10.  前記絶縁層は、前記電磁波シールド層の端部を越えて突出し、前記第1突出部に接触して積層された第3突出部を備え、前記基板の一方の面側から前記電子部品搭載基板を封止する際に、前記第1突出部と前記第3突出部とは、前記基板の他方の面側に折り込まれることにより、前記基板の他方の面側を前記第3突出部が接触して被覆するよう構成されている請求項7に記載の封止用フィルム。 The insulating layer protrudes beyond an end portion of the electromagnetic wave shielding layer, and includes a third protruding portion stacked in contact with the first protruding portion, and the electronic component mounting substrate is provided from one surface side of the substrate. When sealing, the first protrusion and the third protrusion are folded to the other surface side of the substrate so that the third protrusion contacts the other surface side of the substrate. The sealing film according to claim 7 configured to cover.
  11.  前記電子部品搭載基板は、前記基板の一方の面側に設けられ、前記電子部品に電気的に接続された電極をさらに備え、
     前記電磁波シールド層は、前記被覆層の端部を越えて突出する第4突出部を備え、前記基板の一方の面側から前記電子部品搭載基板を封止する際に、前記第4突出部は、前記基板の一方の面側に折り込まれることにより、前記基板の一方の面側で前記電極に接触するよう構成されている請求項6に記載の封止用フィルム。
    The electronic component mounting substrate further includes an electrode provided on one surface side of the substrate and electrically connected to the electronic component,
    The electromagnetic wave shielding layer includes a fourth projecting portion projecting beyond the end portion of the coating layer, and when sealing the electronic component mounting substrate from one surface side of the substrate, the fourth projecting portion is The sealing film according to claim 6, wherein the sealing film is configured to be in contact with the electrode on one surface side of the substrate by being folded on one surface side of the substrate.
  12.  前記絶縁層は、前記電磁波シールド層の端部を越えて突出する突出部を備えている請求項1に記載の封止用フィルム。 The sealing film according to claim 1, wherein the insulating layer includes a protruding portion that protrudes beyond an end portion of the electromagnetic wave shielding layer.
  13.  前記電磁波シールド層は、前記電子部品に対応する位置に選択的に形成されている請求項12に記載の封止用フィルム。 The sealing film according to claim 12, wherein the electromagnetic wave shielding layer is selectively formed at a position corresponding to the electronic component.
  14.  前記突出部は、前記基板の一方の面側から前記電子部品搭載基板を封止する際に、前記基板の他方の面側に折り込まれることにより、前記基板の他方の面側を被覆するよう構成されている請求項12または13に記載の封止用フィルム。 The protruding portion is configured to cover the other surface side of the substrate by being folded to the other surface side of the substrate when the electronic component mounting substrate is sealed from the one surface side of the substrate. The film for sealing according to claim 12 or 13 which is made.
  15.  前記電子部品搭載基板は、開放端面を有し、前記電子部品に電気的に接続された接続部材をさらに有し、
     当該封止用フィルムは、前記電子部品搭載基板を封止する際に、前記接続部材に対応する位置に逃げ部を有する請求項1に記載の封止用フィルム。
    The electronic component mounting substrate further includes a connection member having an open end surface and electrically connected to the electronic component,
    The said film for sealing is a film for sealing of Claim 1 which has an escape part in the position corresponding to the said connection member, when sealing the said electronic component mounting board | substrate.
  16.  前記絶縁層および前記電磁波シールド層を構成する前記樹脂材料は、熱可塑性樹脂である請求項15に記載の封止用フィルム。 The sealing film according to claim 15, wherein the resin material constituting the insulating layer and the electromagnetic wave shielding layer is a thermoplastic resin.
  17.  前記電子部品搭載基板は、前記基板の他方の面側に設けられ、前記電子部品に電気的に接続された電極をさらに備え、
     前記電磁波シールド層は、前記絶縁層の端部を越えて突出する突出部を備え、前記基板の一方の面側から前記電子部品搭載基板を封止する際に、前記突出部は、前記基板の他方の面側に折り込まれることにより前記電極に接触するよう構成されている請求項1に記載の封止用フィルム。
    The electronic component mounting substrate further includes an electrode provided on the other surface side of the substrate and electrically connected to the electronic component,
    The electromagnetic wave shielding layer includes a protruding portion that protrudes beyond the end portion of the insulating layer, and when the electronic component mounting substrate is sealed from one surface side of the substrate, the protruding portion is formed on the substrate. The sealing film according to claim 1, wherein the sealing film is configured to be in contact with the electrode by being folded to the other surface side.
  18.  前記電極は、前記基板の縁部に設けられている請求項17に記載の封止用フィルム。 The sealing film according to claim 17, wherein the electrode is provided on an edge of the substrate.
  19.  前記電極は、グランド電極である請求項17または18に記載の封止用フィルム。 The sealing film according to claim 17 or 18, wherein the electrode is a ground electrode.
  20.  当該封止用フィルムは、25℃以上80℃以下の温度範囲での線膨張率が100ppm/K以下である請求項1ないし19のいずれか1項に記載の封止用フィルム。 The sealing film according to any one of claims 1 to 19, wherein the sealing film has a linear expansion coefficient of 100 ppm / K or less in a temperature range of 25 ° C to 80 ° C.
  21.  前記絶縁層および前記電磁波シールド層のうち少なくとも一方は、前記樹脂材料として、ポリオレフィン系樹脂を含有する請求項1ないし20のいずれか1項に記載の封止用フィルム。 The sealing film according to any one of claims 1 to 20, wherein at least one of the insulating layer and the electromagnetic wave shielding layer contains a polyolefin resin as the resin material.
  22.  当該封止用フィルムは、その平均厚さが10μm以上700μm以下である請求項1ないし21のいずれか1項に記載の封止用フィルム。 The sealing film according to any one of claims 1 to 21, wherein the sealing film has an average thickness of 10 µm to 700 µm.
  23.  前記基板は、プリント配線基板である請求項1ないし22のいずれか1項に記載の封止用フィルム。 The sealing film according to any one of claims 1 to 22, wherein the substrate is a printed wiring board.
  24.  請求項2ないし5のいずれか1項に記載の封止用フィルムを用いて、前記基板と前記電子部品と前記電極を封止する電子部品搭載基板の封止方法であって、
     前記基板と前記電子部品と前記電極を覆うように、前記絶縁層を前記電子部品搭載基板側にして前記封止用フィルムを前記電子部品搭載基板上に配置する工程と、
     前記封止用フィルムを加熱し軟化させるとともに、減圧する工程と、
     前記封止用フィルムを冷却させるとともに、加圧することで、前記突出部が前記電極に接触した状態で、前記基板と前記電子部品と前記電極とを前記封止用フィルムで封止する工程とを有することを特徴とする電子部品搭載基板の封止方法。
    A sealing method of an electronic component mounting substrate for sealing the substrate, the electronic component, and the electrode using the sealing film according to any one of claims 2 to 5,
    Placing the sealing film on the electronic component mounting substrate with the insulating layer facing the electronic component mounting substrate so as to cover the substrate, the electronic component, and the electrode;
    Heating and softening the sealing film, and depressurizing;
    The step of sealing the substrate, the electronic component, and the electrode with the sealing film in a state where the protruding portion is in contact with the electrode by cooling and pressurizing the sealing film. A method for sealing an electronic component mounting substrate, comprising:
  25.  請求項6ないし11のいずれか1項に記載の封止用フィルムを用いて、前記基板と前記電子部品とを封止する電子部品搭載基板の封止方法であって、
     前記基板と前記電子部品とを覆うように、前記絶縁層を前記電子部品搭載基板側にして前記封止用フィルムを前記電子部品搭載基板上に配置する工程と、
     前記封止用フィルムを加熱し軟化させるとともに、減圧する工程と、
     前記封止用フィルムを冷却させるとともに、加圧することで、前記基板と前記電子部品とを前記封止用フィルムで封止する工程とを有することを特徴とする電子部品搭載基板の封止方法。
    A sealing method of an electronic component mounting substrate for sealing the substrate and the electronic component using the sealing film according to any one of claims 6 to 11,
    Disposing the sealing film on the electronic component mounting substrate with the insulating layer facing the electronic component mounting substrate so as to cover the substrate and the electronic component;
    Heating and softening the sealing film, and depressurizing;
    A method for sealing an electronic component mounting substrate, comprising: cooling the sealing film and applying pressure to seal the substrate and the electronic component with the sealing film.
  26.  請求項12ないし14のいずれか1項に記載の封止用フィルムを用いて、前記基板と前記電子部品とを封止する電子部品搭載基板の封止方法であって、
     前記基板と前記電子部品とを覆うように、前記絶縁層を前記電子部品搭載基板側にして前記封止用フィルムを前記電子部品搭載基板上に配置する工程と、
     前記封止用フィルムを加熱し軟化させるとともに、減圧する工程と、
     前記封止用フィルムを冷却させるとともに、加圧することで、前記絶縁層を介して前記電磁波シールド層により前記電子部品を被覆した状態で、前記基板と前記電子部品とを前記封止用フィルムで封止する工程とを有することを特徴とする電子部品搭載基板の封止方法。
    A sealing method for an electronic component mounting substrate for sealing the substrate and the electronic component using the sealing film according to any one of claims 12 to 14,
    Disposing the sealing film on the electronic component mounting substrate with the insulating layer facing the electronic component mounting substrate so as to cover the substrate and the electronic component;
    Heating and softening the sealing film, and depressurizing;
    By cooling and pressurizing the sealing film, the substrate and the electronic component are sealed with the sealing film while the electronic component is covered with the electromagnetic wave shielding layer through the insulating layer. And a step of stopping the electronic component mounting substrate.
  27.  請求項15または16に記載の封止用フィルムを用いて、前記基板と前記電子部品とを封止する電子部品搭載基板の封止方法であって、
     前記基板と前記電子部品とを覆い、かつ、前記接続部材に前記逃げ部が対応するように前記封止用フィルムを前記電子部品搭載基板上に配置する工程と、
     前記封止用フィルムを加熱し軟化させるとともに、減圧する工程と、
     前記封止用フィルムを冷却させるとともに、加圧することで、前記接続部材が封止されることなく、前記基板と前記電子部品とを前記封止用フィルムで封止する工程とを有することを特徴とする電子部品搭載基板の封止方法。
    An electronic component mounting substrate sealing method for sealing the substrate and the electronic component using the sealing film according to claim 15 or 16,
    A step of covering the substrate and the electronic component and disposing the sealing film on the electronic component mounting substrate so that the escape portion corresponds to the connection member;
    Heating and softening the sealing film, and depressurizing;
    A step of sealing the substrate and the electronic component with the sealing film without sealing the connecting member by cooling and pressurizing the sealing film. An electronic component mounting substrate sealing method.
  28.  請求項17ないし19のいずれか1項に記載の封止用フィルムを用いて、前記基板と前記電子部品と前記電極とを封止する電子部品搭載基板の封止方法であって、
     前記基板と前記電子部品とを覆うように、前記絶縁層を前記電子部品搭載基板側にして前記封止用フィルムを前記電子部品搭載基板上に配置しつつ、前記突出部を、前記基板の他方の面側に折り込むことにより前記電極に接触させる工程と、
     前記封止用フィルムを加熱し軟化させるとともに、減圧する工程と、
     前記封止用フィルムを冷却させるとともに、加圧することで、前記突出部が前記電極に接触した状態で、前記基板と前記電子部品と前記電極とを前記封止用フィルムで封止する工程とを有することを特徴とする電子部品搭載基板の封止方法。
    An electronic component mounting substrate sealing method for sealing the substrate, the electronic component, and the electrode using the sealing film according to any one of claims 17 to 19,
    The projecting portion is placed on the other side of the substrate while the sealing film is disposed on the electronic component mounting substrate with the insulating layer facing the electronic component mounting substrate so as to cover the substrate and the electronic component. The step of contacting the electrode by folding it to the surface side of
    Heating and softening the sealing film, and depressurizing;
    The step of sealing the substrate, the electronic component, and the electrode with the sealing film in a state where the protruding portion is in contact with the electrode by cooling and pressurizing the sealing film. A method for sealing an electronic component mounting substrate, comprising:
  29.  請求項1ないし23のいずれか1項に記載の封止用フィルムと、該封止用フィルムにより被覆された前記基板、前記電子部品および前記電極を備える前記電子部品搭載基板とを有し、前記突出部は、前記電極に接触していることを特徴とする封止用フィルム被覆電子部品搭載基板。 24. The sealing film according to claim 1, and the electronic component mounting substrate including the substrate covered with the sealing film, the electronic component, and the electrode, The film-covered electronic component mounting substrate for sealing, wherein the protrusion is in contact with the electrode.
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