TW201410455A - 阻隔膜構造及其製備方法 - Google Patents

阻隔膜構造及其製備方法 Download PDF

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TW201410455A
TW201410455A TW102128167A TW102128167A TW201410455A TW 201410455 A TW201410455 A TW 201410455A TW 102128167 A TW102128167 A TW 102128167A TW 102128167 A TW102128167 A TW 102128167A TW 201410455 A TW201410455 A TW 201410455A
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barrier film
polymer layer
substrate
matrix
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Joseph Charles Spagnola
Mark August Roehrig
Thomas Paul Klun
Alan Kenneth Nachtigal
Christopher Stewart Lyons
Guy Douglas Joly
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3M Innovative Properties Co
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Abstract

本發明提供一種阻隔膜,其包括基板;鄰接於該基板之基質聚合物層;鄰接於該基質聚合物層之氧化物層;鄰接於該氧化物層之黏著性改質層;及鄰接於該黏著性改質層之頂塗聚合物層。視情況存在之無機層可塗覆於該頂塗聚合物層上。該黏著性改質層之納入向該等底層阻隔堆疊層提供該頂塗聚合物層之增強的耐水性及改良的剝落強度黏著性。

Description

阻隔膜構造及其製備方法
本發明藉由政府支持,根據能源部(Department of Energy)授與之合同號DE-EE0004739、第3053項來進行。政府對本發明具有特定權利。
【相關申請案】
本申請案根據35 U.S.C.§ 119(e)主張2012年8月8日申請之美國臨時申請案第61/680,963號及2013年3月13日申請之美國臨時申請案第61/779455號的權益。
本發明大致關於阻隔膜及阻隔膜之製備方法。
聚合物及氧化物(諸如氧化鋁或氧化矽)之多層堆疊在單一傳遞塗佈方法(single pass coating process)中沈積於可撓性聚合物膜上以製備抗水分滲透之阻隔膜。此等阻隔膜可藉由多種製造方法製備,包括液態塗佈技術,諸如溶液塗佈、滾塗、浸塗、噴塗、旋塗;及乾式塗佈技術,諸如化學氣相沈積(CVD)、電漿增強化學氣相沈積(PECVD)、濺鍍及用於固體材料之熱蒸發的真空方法。該等阻隔膜及方法之實例可見於例如美國專利第5,440,446號(Shaw等人)、第5,877,895號(Shaw等人)、第6,010,751號(Shaw等人)、第7,018,713號(Padiyath等)及第6,413,645號(Graff等)中,該等專利猶如全面闡述均以引用的方式併入 本文中。此等阻隔膜作為玻璃密封材料之可撓性替代物在顯示器、照明及太陽能市場中具有許多應用。
本申請案之發明者設法開發具有改良的耐候性及抗層間分層性之阻隔膜。
阻隔膜之一些實施例包括基板、鄰接該基板之基質聚合物層、鄰接該基質聚合物層之氧化物層、鄰接該氧化物層之黏著性改質層及鄰接該黏著性改質層之頂塗聚合物層。在一些實施例中,該頂塗聚合物包括丙烯酸酯。視情況,無機層可位於該頂塗聚合物層上。在一些實施例中,黏著性改質層為黏著性促進層。在其他實施例中,黏著性改質層為脫模層。
製備阻隔膜之方法的一些實施例包括如下步驟:提供基板、將基質聚合物層塗覆於該基板上、將氧化物層塗覆於該基質聚合物層上、將黏著性改質層塗覆於該氧化物層上及將頂塗聚合物層塗覆於該黏著性改質層上。
另一黏著性促進層向底層阻隔堆疊層提供頂塗層之增強的耐水性及改良的剝落強度黏著性。
另一脫模層向氧化物層及聚合物層之一提供臨時保護層之塗覆及後續移除,從而形成改良的阻隔總成。在一些實施例中,將該保護層塗覆於氧化物層上以在加工期間保護氧化物層。在加工期間保護層之納入可減少氧化物層中之缺陷的形成。在一些實施例中,隨後在後續加工期間自氧化物層移除保護層。在一些實施例中,立即藉由塗覆黏著層及/或頂部薄片或保護襯墊來保護所曝露之氧化物層。
本申請案之其他特徵及優勢係在以下連同兩個附圖一起考慮之【實施方式】中予以描述或闡述。
10‧‧‧阻隔膜/膜
12‧‧‧基板
14‧‧‧基質聚合物層/聚合物層
16‧‧‧無機層(例如氧化物層)/無機層
18‧‧‧黏著性改質層
20‧‧‧頂塗聚合物層/聚合物層
21‧‧‧無機層
22‧‧‧系統
24‧‧‧冷卻轉鼓/轉鼓
25‧‧‧箭頭
26‧‧‧膜
28‧‧‧蒸發器
30‧‧‧固化單元
32‧‧‧氧化物濺鍍單元
34‧‧‧蒸發器
36‧‧‧蒸發器
38‧‧‧固化單元
隨圖係併入本說明書中且構成本說明書之一部分,且與【實施方式】一起解釋本發明之優勢及原理。在圖式中,圖1為展示具有黏著性改質層之阻隔膜的示意性剖面;及圖2為說明製備阻隔膜之方法的示意圖。
該等圖未必按比例繪製。應瞭解使用數字指代既定圖中之組件並不意欲限制另一圖中標有相同數字之組件。
在以下【實施方式】中,可參考形成【實施方式】之一部分且若干個特定實施例以說明之方式展示於其中之該組附圖。應瞭解涵蓋其他實施例且其可在不背離本發明之範疇或精神的情況下進行。
如上文所述,若干種方法可用於在多層阻隔膜中產生氧化物層。此等方法各自均提供獨特之挑戰。在一些情況下,多層阻隔膜中各層之間的黏著性對於所需應用為不足的。舉例而言,聚合物層(例如聚酯層、丙烯酸酯或甲基丙烯酸脂層)可不具有對鄰接聚合物層之良好黏著性。或者,聚合物層可不具有對鄰接氧化層之良好黏著性。舉例而言,當使用濺鍍方法形成氧化物層時,會出現黏著性問題。在濺鍍方法中,適用於形成阻隔氧化物層之沈積能量通常較高。相比之下,沈積聚合物層所涉及之能量通常較低,且此沈積能量差異可導致黏著性問題。為提高各層之間的黏著性,尤其初始黏著性,次氧化矽之薄濺鍍層(例如無機「黏結」層)已顯示有用。此無機黏結層成分可隨後與基板層(氧化物)及聚合物罩蓋層形成化學鍵。用於製備無機黏結層之濺鍍方法必須在精確之功率及氣流設置下進行以改良黏著性效能。此沈積方法長期以來一直易受雜訊影響,其導致聚合物層之改變及低黏著性。即使當阻隔堆疊之初始黏著性為可接受,但當曝露於85℃及85%相對濕度之加速老化條件下時,次氧化物與聚合物之間或鄰接聚合物層之間的黏著性已顯示較弱。另外,氧化物層中之缺陷可 在加工期間出現。氧化物層中之缺陷可降低聚合物層與氧化物層之間的黏著性,從而導致阻隔膜意欲保護之裝置的阻隔膜對水進入、降解及/或分層之易感性提高。需要用於製備阻隔膜之更穩固溶液。
本申請案之發明者設法開發具有改良的耐候性及抗層間分層性之阻隔膜。在一個態樣中,發明者認識到需要提高阻隔膜之各層之間的黏著性。在另一態樣中,發明者認識到需要在加工期間臨時保護氧化物層以減少缺陷形成。
圖1為阻隔膜10之示意性剖面。膜10包括以如下順序配置之層:基板12;基質聚合物層14;無機層(例如氧化物層)16;另一黏著性改質層18;頂塗聚合物層20;及視情況存在之無機層21。儘管僅展示兩個聚合物層(14、20)及兩個無機層(16、21),但膜10可在基板12與頂塗聚合物層20或無機層21之間包括聚合物及氧化物之其他交替層。儘管在圖1中黏著性改質層18係安置於無機層16與頂塗聚合物層20之間,但應理解黏著性改質層可存在於任何聚合物-聚合物或聚合物-氧化物界面處。具體而言,黏著性改質層可安置於基板與基質聚合物層之間、基質聚合物層與氧化物層之間、氧化物層與頂塗聚合物層之間及/或頂塗氧化物層上。
在一些實施例中,黏著性改質層18為黏著性促進層,其改良膜10之耐水性及阻隔膜10之剝落強度黏著性。在其他實施例中,黏著性改質層為脫模層,其可提供氧化物層之臨時保護。用於阻隔膜10之各層的例示性材料說明於下文及實例中。
圖2為系統22之圖式,其說明用於製備阻隔膜10之例示性方法。系統22處於真空中且包括用於接收及移動基板12(如由膜26表示)從而提供移動腹板之冷卻轉鼓24。隨著轉鼓24在箭頭25所示之方向上推進膜,蒸發器28塗覆基質聚合物,該基質聚合物藉由固化單元30固化以形成基質聚合物層14。隨著轉鼓24推進膜26,氧化物濺鍍單元32塗覆 氧化物以形成無機層16。對於基質聚合物及氧化物之其他交替層,轉鼓24可在與箭頭25相反之反向上旋轉,且隨後再次推進膜26以塗覆其他交替之基質聚合物及氧化物層,且彼子方法可反覆進行而得到如要求或需要般多之交替層。一旦基質聚合物及氧化物之交替層完成,轉鼓24即進一步推進膜,且蒸發器34沈積黏著性改質層。轉鼓24進一步推進膜,且蒸發器36沈積頂塗聚合物層20。黏著性改質層18及頂塗聚合物層20可分開固化。或者,黏著性改質層18及頂塗聚合物層20可藉由固化單元38同時固化。頂塗聚合物層20可包括例如輻射固化單體(例如(甲基)丙烯酸酯)。實例更詳細地描述使用系統22來製備阻隔膜10之例示性方法。
儘管圖2中展示系統22,但如上文所述,應理解黏著性改質層可存在於任何界面處。在一些實施例中,一或多個層可包含黏著性促進層。在其他實施例中,一或多個層可包含脫模層。在其他實施例中,第一層可包含黏著性促進層,而第二層可包含脫模層。因此,系統22可包含其他蒸發器及/或固化單元或現有蒸發器/固化單元之位置可變化。或者,對於氧化物、黏著性改質層及頂部聚合物層之其他交替層,轉鼓24可在與箭頭25相反之反向上旋轉,且隨後再次推進膜26以塗覆其他交替之氧化物、黏著性改質層及頂部聚合物層。此子方法可反覆進行而得到如要求或需要般多之交替層。
黏著性促進材料經常具有至少一部分,其與至少一個鄰接層反應或能夠與至少一個鄰接層非反應性相互作用。在一些實施例中,該部分與兩個鄰接層反應及/或能夠非反應性相互作用。用於黏著性促進層之例示性材料包括例如矽烷(例如矽烷偶合劑、烷氧基矽烷、鹵矽烷、環狀氮雜矽烷及胺基官能基)、異羥肟酸、磷酸酯、膦酸酯、膦酸、鋯酸鹽、鈦酸鹽及其類似物,該等材料均具有其他反應性基團,例如(甲基)丙烯酸酯及環氧樹脂。其他適合之黏著性促進材料包 括以下與本申請案相同之日期申請之同在申請案中的申請案中所描述之材料:「Barrier Film,Method of Making the Barrier Film,and Articles Including the Barrier Film」(代理人案號:70169US002)、「Composite Layers Including Urea Acrylate Silanes」(代理人案號:69821US002)、「Composite Layers Including Diurethane Silanes」(代理人案號:69822US002)及「Composite Layers Including Urea Urethane Acrylate Silanes」(代理人案號:69823US002),該等申請案均以引用的方式併入本文中。
在一些實施例中,黏著性促進層為矽烷偶合劑。此類型材料之特性為其與新鮮濺鍍沈積之金屬氧化物層(例如具有表面羥基-矽烷醇(Si-OH)基團之新鮮濺鍍SiO2層)上的金屬-羥基(金屬-OH)反應之能力。可充分控制多重方法真空腔室中存在之水蒸汽的量以促進形成足夠高表面濃度之Si-OH基團,從而提供增加之鍵結位點。藉由監測殘餘氣體並使用水蒸汽源,可控制真空腔室中之水蒸汽的量以確保充分產生Si-OH基團。
通常,脫模層與至少一個鄰接層之間的黏著性足夠低以在適當條件下能移除該鄰接層,但不會低至使得該等層因在正常處置及加工操作中通常所遇到之力過早分離。用於脫模層之例示性材料包括聚矽氧、氟化材料(例如含有氟烷基或氟伸烷基或全氟聚醚部分之單體、寡聚物或聚合物)、可溶性材料、烷基鏈(例如含有12至36個碳原子之直鏈烴、分支鏈烴及/或環烴部分)及其類似物。
本文所述之膜及方法藉由添加另一黏著改質層而改良經氣相沈積之多層阻隔塗層曝露於水分之後的總黏著性及黏著性滯留。在一些實施例中,在氣相塗佈方法中塗覆黏著性改質層,在該方法中黏著性改質層吸附或凝聚於剛剛已濺鍍塗佈有矽之氧化物及鋁之氧化物的移動腹板基板上。所吸附或凝聚之層可隨後曝露於後續加工步驟,例如 曝露於固化(例如電子束輻射)、其他無機層濺鍍及/或其他聚合物層沈積。藉由添加黏著性促進層,剝落強度黏著性得以大大改良,尤其在曝露於高熱及濕度條件中。另外,添加黏著性改質層可移除對黏結層之需求,此使塗佈方法及阻隔塗層堆疊構造大大簡化。所得阻隔塗層保留高阻隔性質及光學透射效能。
用於基板、基質聚合物層及/或頂塗聚合物層之例示性聚合物包括美國專利申請公開案第2012/0003448號(Weigel等人)中所列之聚合物,其以全文引用的方式併入本文中。
本申請案之阻隔膜可進一步包含頂部薄片。在一些實施例中,該頂部薄片藉助於壓敏黏著劑黏著於阻隔膜上。能形成頂部薄片之適用材料包括聚酯、聚碳酸酯、聚醚、聚醯亞胺、聚烯烴、氟聚合物及其組合。用於頂部薄片之例示性聚合物包括美國專利申請公開案第2012/0003448號(Weigel等人)中所列之聚合物,其以全文引用的方式併入本文中。
在實施例中,本申請案之阻隔膜係用於密封太陽能裝置。在該等實施例中,通常希望頂部薄片能抗紫外(UV)光降解且具有耐候性。由UV光(例如在280nm至400nm之範圍內)引起之光氧化性降解可導致聚合物膜之變色以及光學及機械性質退化。本文所述之頂部薄片可為光伏打裝置提供例如耐用的耐候性頂塗層。基板通常具有耐磨性及抗衝擊性,且可防止例如光伏打裝置在曝露於室外環境時降解。
在一些例示性實施例中,可撓性電子裝置可利用本文所述之方法直接密封。舉例而言,可將該等裝置附接至可撓性載體基板,且可沈積遮罩以在無機層、聚合物(共聚物)層或其他層之沈積期間保護來自無機層、聚合物(共聚物)層或其他層之電連接。構成多層阻隔總成之無機層、聚合物(共聚物)層或其他層可如本發明其他處所描述進行沈積,且可隨後移除該遮罩,從而曝露電連接。
在一個例示性直接沈積或直接密封實施例中,濕敏裝置為濕敏電子裝置。該濕敏電子裝置可為例如有機、無機或混合式有機/無機半導體裝置,包括例如光伏打裝置(諸如(二)硒化鎵銦銅(CIGS)太陽能電池)、顯示裝置(諸如有機發光顯示器(OLED)、電鉻顯示器、電泳顯示器或液晶顯示器(LCD)(諸如量子點LCD顯示器))、OLED或其他電致發光固態照明裝置或其組合及其類似裝置。
適合於製備多層阻隔總成之方法及適合之透明多層阻隔塗層的實例可見於例如美國專利第5,440,446號(Shaw等人)、第5,877,895號(Shaw等人)、第6,010,751號(Shaw等人)及第7,018,713號(Padiyath等人)中。在一個目前較佳實施例中,物品或膜中之阻隔總成可藉由在捲軸式真空腔室中將各種層沈積於基板上來製造,該腔室與美國專利第5,440,446號(Shaw等人)及第7,018,713號(Padiyath等人)中所描述之系統類似。
實例
除非另外指示,否則實例中之所有份數、百分比及比率均以重量計。除非另有說明,否則所用溶劑及其他試劑係獲自Sigma-Aldrich Chemical Company;Milwaukee,WI。
比較層狀構造A及層狀構造1至2之製備
比較層狀構造A及層狀構造1至2係如下製備:使用0.05mm厚之壓敏黏著劑(PSA)(以商標名稱「3M OPTICALLY CLEAR ADHESIVE 8172P」獲自3M Company,St.Paul,MN)將22.9cm×15.2cm阻隔膜層壓至乙烯四氟乙烯聚合物薄片(ETFE)(0.05mm厚,以商標名稱「NORTON ETFE」購自St.Gobain Performance Plastics,Wayne,NJ)上,其中阻隔膜之頂塗聚合物層鄰接ETFE薄片。比較層狀構造A及層狀構造1至2係分別使用比較實例A及實例1至2之阻隔膜製備。隨後將阻隔膜之聚對苯二甲酸乙二酯(PET)面置放於0.14mm(0.0056in)厚之 21.6cm×14 cm塗有PTFE之鋁箔(以商標名稱「8656K61」獲自McMaster-Carr,Santa Fe Springs,CA)的聚四氟乙烯(PTFE)面上。塗有PTFE之鋁箔在各維度上均比阻隔膜小1.27cm,由此使得一部分PET曝露。將13mm(0.5in)寬之乾燥邊緣帶(以商標名稱「SOLARGAIN EDGE TAPE SET LP01」獲自Truseal Technologies Inc.,Solon,OH)圍繞塗有PTFE之鋁箔的周圍置放,以使層壓阻隔薄片緊固於PTFE層上。將0.38cm(0.015in)厚之密封膜(以商標名稱「JURASOL」獲自JuraFilms,Downer Grove,IL)置放於塗有PTFE之鋁箔的鋁面上。將組成與第一層壓阻隔薄片相同的第二層壓阻隔薄片之PET層置放於密封膜上,以形成層狀構造。在150℃下將該構造真空層壓12分鐘。
測試方法 光譜穿透率
使用光譜儀(型號「LAMBDA 900」,購自PerkinElmer,Waltham,MA)量測光譜穿透率。光譜穿透率係以在0°入射角下在400nm與700nm之間的平均穿透百分比(Tvis)報告。
水蒸汽穿透率
比較實例A及實例1至2之阻隔膜的水蒸汽穿透率(WVTR)係根據ASTM F-1249-06「Standard Test Method for Water Vapor Transmission Rate Through Plastic Film and Sheeting Using a Modulated Infrared Sensor」中所概述之程序使用MOCON PERMATRAN-W®型號700 WVTR測試系統(獲自MOCON,Inc,Minneapolis,MN)來量測。使用約50℃之溫度及約100%之相對濕度(RH)且WVTR以公克/平方公尺/天(g/m2/天)表示。該測試系統之最低偵測極限為0.005g/m2/天。在一些情況下,所量測之WVTR低於最低偵測極限且以<0.005g/m2/天報告。
老化測試
將用比較實例A及實例1至2之阻隔膜製備之層狀構造置放於設定為約85℃之溫度及約85%之相對濕度的環境腔室(型號「SE-1000-3」,獲自Thermotron Industries,Holland,MI)中,持續0(初始)、250及500小時。
T型剝離測試方法
比較實例A及實例1及2之老化及未老化的阻隔膜係藉由剝去PTFE層而自層狀構造移除。隨後將阻隔膜切割成1.0in寬(2.54cm)之部分。按照ASTM D 1876-08「Standard Test Method for Peel Resistance of Adhesives(T-Peel Test)」中所概述之程序,將此等部分置放於抗張強度測試儀(以商標名稱「INISIGHT 2 SL」連同Testworks 4軟體一起獲自MTS,Eden Prairie,MN)中。使用254mm/min(10吋/分鐘)之剝離速度。黏著性係以介於0.05cm與5.95cm之間的四次剝離量測之平均值形式以牛頓/公分(N/cm)報告。
比較實例A
在真空塗佈機上藉由用基質聚合物層、無機氧化鋁矽(SiAlOx)阻隔層及頂塗聚合物層之堆疊覆蓋聚對苯二甲酸乙二酯(PET)基板膜(以商品名「XST 6642」獲自E.I.DuPont de Nemours,Wilmington,DE)來製備阻隔膜,該真空塗佈機與美國專利第5,440,446號(Shaw等人)及第7,018,713號(Padiyath等人)中所述之塗佈機類似,兩個專利皆以引用的方式併入本文中。個別層係如下形成:
層1(基質聚合物層):將0.127mm厚×366mm寬之PET膜的350公尺長捲筒裝入捲軸式真空加工腔室中。將該腔室抽吸降至1×10-5托(Torr)之壓力。在維持PET膜之背面與冷卻至-10℃之塗佈轉鼓接觸的同時,保持4.8公尺/分鐘之腹板速度。在背面與轉鼓接觸時,用電漿功率為0.02kW之氮氣電漿處理膜正面表面。隨後用三環癸烷二甲醇二丙烯酸酯單體(以商標名稱「SR-833S」自獲Sartomer USA,Exton, PA)塗佈膜正面表面。在塗佈之前將該單體在真空下脫氣至20毫托之壓力,裝入注射泵內,且經由在60kHz之頻率下操作的超音波霧化器以1.33mL/min之流動速率抽吸至維持在260℃之經加熱汽化腔室中。使所得單體蒸氣流凝聚於膜表面上,且使用在7.0kV及4mA下操作之複絲電子束固化槍將其進行電子束交聯以形成720nm厚之基質聚合物層。
層2(無機層):緊隨基質聚合物層沈積且在PET膜之背面仍與轉鼓接觸時,將SiAlOx濺鍍沈積於23m長之基質聚合物層上。使用兩個交流電(AC)電源供應器來控制兩對陰極;其中各陰極容納兩個90% Si/10% Al濺鍍標靶(獲自Materion Corporation,Mayfield Heights,OH)。在濺鍍沈積期間,使用來自各電源供應器之電壓信號作為比例-積分-微分控制迴路之輸入以維持預定氧氣流到達各陰極。AC電源供應器使用5000瓦功率用含有450標準立方公分/分鐘(sccm)氬氣與63sccm氧氣之氣體混合物在3.5毫托之濺鍍壓力下濺鍍90% Si/10% Al標靶。由此在層1之基質聚合物層上沈積30nm厚之SiAlOx層。
層3(頂塗聚合物層):緊隨SiAlOx沈積且在PET膜之背面仍與轉鼓接觸時,使丙烯酸酯單體(與層1相同之單體)凝聚於層2上且如層1所述進行交聯,但其中改為使用在7kV及5mA下操作之複絲電子束固化槍。由此在層2上得到720nm厚之頂塗聚合物層。
比較實例A之阻隔膜的初始T型剝離黏著力、光譜穿透率(Tvis)及水蒸汽穿透率(WVTR)係使用上述測試方法進行量測。按照以上概述之程序,隨後使阻隔膜老化250小時及500小時。量測經老化之樣品的T型剝離黏著力。結果報告於下表1中。
實例1
如比較實例A中所述製備阻隔膜,但其中改為使黏著性促進材料沈積(亦即汽化並凝聚)於層2上且隨後立即使頂塗聚合物層(層3)沈積 及凝聚。隨後如比較實例A中所述將阻隔膜進行電子束交聯。
使用環狀氮雜矽烷(以商標名稱「1932.4」獲自Gelest,Morrisville,PA,)作為黏著性促進材料。
實例1之阻隔膜的初始T型剝離黏著力、光譜穿透率(Tvis)及水蒸汽穿透率(WVTR)係使用上述測試方法進行量測。按照以上概述之程序,隨後使阻隔膜老化250小時及500小時。量測經老化之樣品的T型剝離黏著力。結果報告於下表1中。
實例2
如實例1中所述製備阻隔膜,但其中黏著性促進材料為(3-丙烯醯氧基丙基)三甲氧基矽烷(自Gelest獲得,商標名稱為「SIA0A200.0」)。
實例2之阻隔膜的初始T型剝離黏著力、光譜穿透率(Tvis)及水蒸汽穿透率(WVTR)係利用上述測試方法進行量測。在以上概述之程序後,隨後使阻隔膜老化250小時及500小時。量測經老化之樣品的T型剝離黏著力。結果報告於下表1中。
所提及之所有參考文獻均以引用的方式併入本文中。
如本文所使用,詞語「上」及「鄰接」涵蓋直接與間接位於某物上之層,其中其他層可位於其間。
如本文所使用,術語「主表面(major surface)」及「主表面(major surfaces)」係指具有三組相對表面之三維形狀上具有最大表面積之表面。
除非另外指示,否則本發明及申請專利範圍中所用之表示特徵 尺寸、量及物理性質之所有數字均應理解為在所有情況下由術語「約」修飾。因此,除非相反地指示,否則前述說明書及隨附申請專利範圍中所闡述之數值參數為近似值,其可視由熟習此項技術者利用本文所揭示之教示所設法獲得之所需特性而變化。
除非本文另外明確指示,否則如本說明書及隨附申請專利範圍中所用,單數形式「一(a)」、「一(an)」及「該」涵蓋具有複數個指示物之實施例。除非本文另外明確指示,否則如本發明及隨附申請專利範圍中所用,術語「或」通常以其包括「及/或」之意義使用。
揭示本發明之各種實施例及實施方案。所揭示之實施例係出於說明而非限制之目的而呈現。上述實施方案及其他實施方案處於以下申請專利範圍之範疇內。熟習此項技術者應瞭解,可用除所揭示之實施例及實施方案以外之實施例及實施方案來實踐本發明。熟習此項技術者應瞭解,可在不背離上述實施例及實施方案之基本原理的情況下對其細節進行諸多改變。應瞭解,本發明並不意欲不當地受本文所闡述之例示性實施例及實例方案限制,且該等實例及實施例僅舉例呈現,且本發明之範疇意欲僅受本文如下所闡述之申請專利範圍限制。另外,在不背離本發明之精神及範疇的情況下,對本發明之各種修改及變更對於熟習此項技術者將變得顯而易見。因此,本申請案之範疇應僅由以下申請專利範圍所確定。
10‧‧‧阻隔膜
12‧‧‧基板
14‧‧‧基質聚合物層
16‧‧‧無機層
18‧‧‧黏著性改質層
20‧‧‧頂塗聚合物層
21‧‧‧無機層

Claims (28)

  1. 一種阻隔膜,其包含:基板;鄰接該基板之基質聚合物層;鄰接該基質聚合物層之氧化物層;鄰接該氧化物層之黏著性改質層;及鄰接該黏著性改質層之頂塗聚合物層。
  2. 如請求項1之阻隔膜,其在該基板與該頂塗聚合物之間進一步包含該基質聚合物層及該氧化物層之複數個交替層。
  3. 如請求項1或2之阻隔膜,其中該基板包含可撓性透明膜。
  4. 如請求項1至3中任一項之阻隔膜,其中該基質聚合物層包含丙烯酸酯。
  5. 如請求項1至4中任一項之阻隔膜,其中該氧化物層包含無機氧化鋁矽層。
  6. 如請求項1至5中任一項之阻隔膜,其進一步包含塗覆於該頂塗聚合物層上之無機層。
  7. 如請求項6之阻隔膜,其中該無機層包含無機氧化鋁矽層。
  8. 如請求項1至7中任一項之阻隔膜,其中該頂塗聚合物層包括丙烯酸酯。
  9. 如請求項1至8中任一項之阻隔膜,其中該黏著性改質層為黏著性促進層。
  10. 如請求項1至9中任一項之阻隔膜,其中該黏著性促進層包括矽烷。
  11. 如請求項1至10中任一項之阻隔膜,其中該黏著性改質層為脫模層。
  12. 如前述請求項中任一項之阻隔膜,其中該黏著性改質層係位於以下一者處:該基板與該基質聚合物層之間、該基質聚合物層與該氧化物材料之間、及該氧化物材料與該頂塗聚合物層之間。
  13. 一種製備阻隔膜之方法,其包含:提供基板;將基質聚合物材料塗覆於該基板上;將氧化物材料塗覆於該基質聚合物材料上;將黏著性改質材料塗覆於該氧化物材料上;及在該黏著性改質材料上形成頂塗聚合物層。
  14. 如請求項13之方法,其中將該基質聚合物材料塗覆於該基板上包含將基質聚合物材料蒸發於該基板上及使該所蒸發之基質聚合物材料固化以形成基質聚合物層。
  15. 如請求項13或14之方法,其中塗覆該氧化物材料包含將氧化物材料濺鍍沈積於該基質聚合物材料上。
  16. 如請求項13至15中任一項之方法,其進一步包含:將基質聚合物材料反覆塗覆於該基板上及將氧化物材料塗覆於該基質聚合物材料上,以在該基板與該頂塗聚合物層之間形成該基質聚合物材料及該氧化物材料之交替層。
  17. 如請求項13至16中任一項之方法,其中該頂塗聚合物層包括丙烯酸酯,且形成該頂塗聚合物層包含將該黏著性改質材料與該丙烯酸酯共蒸發及使該共蒸發之黏著性改質材料及丙烯酸酯固化。
  18. 如請求項13至17中任一項之方法,其進一步包含:使該黏著性改質材料及該頂塗聚合物層中之至少一者固化。
  19. 如請求項13至18中任一項之方法,其中該基質聚合物材料包括 丙烯酸酯。
  20. 如請求項13至19中任一項之方法,其中塗覆該氧化物材料包含將無機氧化鋁矽層塗覆於該基質聚合物層上。
  21. 如請求項13至20中任一項之方法,其進一步包含:將無機材料塗覆於該頂塗聚合物層上。
  22. 如請求項21之方法,其中塗覆該無機層包含塗覆無機氧化鋁矽層。
  23. 如請求項13至22中任一項之方法,其中該黏著性改質層係安置於以下一者處:該基板與該基質聚合物層之間、該基質聚合物層與該氧化物材料之間、及該氧化物材料與該頂塗聚合物層之間。
  24. 一種阻隔膜,其包含:基板;基質聚合物層;氧化物層;黏著性改質層;及頂塗聚合物層。
  25. 如請求項24之阻隔膜,其中該黏著性改質層係安置於以下一者處:該基板與該基質聚合物層之間、該基質聚合物層與該氧化物材料之間、及該氧化物材料與該頂塗聚合物層之間。
  26. 如請求項24之阻隔膜,其中該黏著性改質層係安置於該頂塗聚合物層上。
  27. 如請求項1至12或24至26中任一項之阻隔膜,其中該基板係選自聚合物(共聚物)膜或電子裝置,該電子裝置進一步包含有機發光裝置(OLED)、電泳發光裝置、液晶顯示器、薄膜電晶體、光伏打裝置或其組合。
  28. 如請求項13至23中任一項之方法,其中該基板係選自聚合物(共聚物)膜或電子裝置,該電子裝置進一步包含有機發光裝置(OLED)、電泳發光裝置、液晶顯示器、薄膜電晶體、光伏打裝置或其組合。
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US20150213990A1 (en) 2015-07-30
BR112015002840A2 (pt) 2017-08-08
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US20190180968A1 (en) 2019-06-13
CN104684727A (zh) 2015-06-03
JP2015530289A (ja) 2015-10-15
WO2014025570A1 (en) 2014-02-13
EP2882587A1 (en) 2015-06-17
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