TW201401522A - 含有金氧半導體的薄膜電晶體基板及其製造方法 - Google Patents

含有金氧半導體的薄膜電晶體基板及其製造方法 Download PDF

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TW201401522A
TW201401522A TW101145642A TW101145642A TW201401522A TW 201401522 A TW201401522 A TW 201401522A TW 101145642 A TW101145642 A TW 101145642A TW 101145642 A TW101145642 A TW 101145642A TW 201401522 A TW201401522 A TW 201401522A
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electrode
layer
gate
film transistor
thin film
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TWI489635B (zh
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Ki-Sul Cho
Seong-Moh Seo
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Lg Display Co Ltd
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Abstract

涉及用於平板顯示器之含有金氧半導體的薄膜電晶體基板及其製造方法。本發明提出一種薄膜電晶體基板，包括：閘電極，形成在基板上；閘極絕緣層，覆蓋閘電極的一部分並暴露閘電極的其他部分；半導體主動層，與閘電極的一部分重疊且位於閘極絕緣層上；閘線，接觸閘電極的其他部分並延伸在基板的水平方向上；中間絕緣層，暴露半導體主動層的中間部分並覆蓋閘線和閘電極；資料線，延伸在基板的垂直方向上且位於中間絕緣層上；源電極，分支自資料線並接觸半導體主動層的一側；以及汲電極，與源電極相對預定距離面對並接觸半導體主動層的另一側。

Description

含有金氧半導體的薄膜電晶體基板及其製造方法
本發明涉及一種用於平板顯示器之含有金氧半導體的薄膜電 晶體基板及其製造方法。尤其，本發明涉及一種含有金氧半導體的薄膜電晶體基板及其製造方法，其中在該薄膜電晶體基板中，藉由熱處理提高了通道層的穩定性。
現今，隨著資訊社會的發展，用於顯示各種資訊的顯示器的 需求日益增加。因此，各種平板顯示器開發以克服陰極射線管的各種缺陷，如重量重及體積大。平板顯示裝置包括液晶顯示裝置(或LCD)、場發射顯示器(或FED)、電漿顯示面板(或PDP)、電致發光裝置(或ED)以及電泳顯示裝置(或EDD)。
平板顯示器的顯示面板可包括具有薄膜電晶體的薄膜電晶體 基板，其中該薄膜電晶體分配於以矩陣形式排列的各像素區域中。例如，藉由利用電場控制液晶層的透光率，該液晶顯示裝置顯示視訊資料。根據電場的方向，該LCD可分為兩種主要類型：一種為垂直電場型以及另一種為水平電場型。
對於垂直電場型LCD，形成在上基板上的公共電極與形成 在下基板上的像素電極相互面對，用於形成方向垂直於基板面的電場。設置在上基板與下基板之間的扭轉向列型(TN)液晶層由垂直電場驅動。該垂直電場型LCD具有高開口率的優點，同時具有約90度的窄視角的缺點。
對於水平電場型LCD，公共電極與像素電極平行形成在相 同的基板上。設置在上基板與下基板之間的液晶層藉由平行於基板面的電場以面內切換(IPS)模式驅動。該水平電場型LCD具有約160度的寬視角且響應速度快於垂直電場型LCD的優點。然而，該水平電場型LCD可具有如低開口率及背光穿透率的缺點。在IPS模式LCD中，例如，為了形成面內電場，公共電極與像素電極之間的間隔可大於上基板與下基板之間的間隔，並且為了得到足夠的電場強度，公共電極及像素電極可具有一定寬度的條紋圖案。在IPS模式LCD的像素電極與公共電極之間，形成水平於基板的電場。然而，僅對於像素電極及公共電極，其他則無電場存在。也就是說，僅在像素公共電極上排列的分子未被驅動，只保持初始狀態(初始配向方向)。由於初始狀態中的液晶無法準確地控制透光率，因此開口率及亮度降低。
為了解決IPS模式LCD的該等缺點，已提出由邊緣電場驅 動的邊緣場切換(或FFS)型LCD。FFS型LCD包含公共電極及像素電極，其中絕緣層置於公共電極與像素電極之間，並且像素電極與公共電極之間的間隔設置窄於上基板與下基板之間的間隔。從而，具有抛物線形的邊緣電場形成在公共電極與像素電極之上及之間的空間中。因此，設置在上基板與下基板之間的所有液晶分子可由該邊緣場驅動。從而，可提高開口率及前發光強度。
第1圖為說明根據現有技術之包括在邊緣場型液晶顯示器內 之氧化物半導體層的薄膜電晶體基板的平面圖。第2圖為說明根據現有技術沿著I-I’線切割第1圖的薄膜電晶體基板結構的剖面圖。
第1圖和第2圖所示的薄膜電晶體基板包含相互交叉的閘線 GL及資料線DL，閘極絕緣層GI置於閘線GL與資料線DL之間且位於下基板SUB之上、以及薄膜電晶體T，形成在該交叉部分內。藉由閘線GL與資料線DL的交叉結構，定義了像素區域。在該像素區域內，相互面對的像素電極PXL及公共電極COM設置以形成邊緣場，其中鈍化層PAS在像素電極PXL與公共電極COM之間。例如，像素電極PXL具有矩形，對應於像素區域的形狀，以及公共電極COM具有複數個相互平行設置的條紋。
公共電極COM連接至公共線CL，該公共線CL與閘線GL 平行設置。參考電壓(或公共電壓)藉由公共線CL供給至公共電極COM。
藉由回應閘線GL的閘信號，薄膜電晶體TFT充電並保持像 素信號電壓至像素電極PXL。據此，薄膜電晶體T包含自閘線GL分支的閘電極G、自資料線DL分支的源電極S、面對源電極S且連接至像素電極PXL的汲電極D以及主動層A，其中該主動層A與閘極絕緣層GI上的閘電極G重疊，用以在源電極S與汲電極D之間形成通道。在主動層A與源電極S之間，以及主動層A與汲電極D之間，可進一步形成歐姆接觸層。
尤其，當主動層A由氧化物半導體材料製成時，由於其具 有高電子遷移率特性，從而適用於需要更大充電電容的大面積薄膜電晶體基板。然而，該氧化物半導體材料並非開發用於電子元件以具有穩定狀態的優良特性。因此，較佳的是具有在主動層A上的蝕刻阻擋ES，用於保護該氧化物半導體材料。例如，在藉由微影蝕刻法進行圖案化源電極S及汲電極D的步驟中，藉由在源電極S與汲電極之間形成蝕刻阻擋ES，主動層A可被保護而不被蝕刻材料侵蝕。
在閘線GL的一端部，形成閘極墊GP，用於接收來自外部 視訊裝置的閘信號。該閘極墊GP通過閘極墊接觸孔GPH連接至閘極墊終端GPT，其中該閘極墊接觸孔GPH貫穿閘極絕緣層GI及鈍化層PAS。此外，在資料線DL的一端部，形成資料墊DP，用於接收來自外部視訊裝置的資料信號。該資料墊DP通過資料墊接觸孔DPH連接至資料墊終端DPT，其中資料墊接觸孔DPH貫穿鈍化層PAS。
設置於閘極絕緣層GI上的像素電極PXL連接至汲電極D。 此外，公共電極COM形成以與像素電極PXL重疊，其中鈍化層置於公共電極COM與像素電極PXL之間且覆蓋像素電極PXL。在像素電極PXL與公共電極COM之間可形成電場，並且然後可藉由介電異方性旋轉水平設置在薄膜電晶體基板與彩色濾光片基板之間的液晶分子。根據液晶分子的旋轉狀態，可控制通過像素區域的光的透光率，並可顯示各種灰階度。
即使具有金氧半導體材料的薄膜電晶體基板有許多優點，但 是至今氧化物半導體的穩定性還未確定。因此，利用氧化物半導體材料開發電子元件存在許多困難。極其需要提出一種具有高可靠性及穩定性之具有氧化物半導體材料的薄膜電晶體基板及製造該薄膜電晶體基板的方法。
為了克服上述缺點，本發明的目的在於提出一種薄膜電晶體基板，其中該金氧半導體層具有提高的特性及穩定性。本發明的另一個目的在於提出一種製造薄膜電晶體基板的方法，在該方法中對該金氧半導體層進行熱處理，從而藉由熱處理，該基板的破壞被減小。
為了實現上述目的，本發明提出一種薄膜電晶體基板，包 括：一閘電極，該閘電極形成在一基板上；一閘極絕緣層，該閘極絕緣層覆蓋該閘電極的一部分並暴露該閘電極的其他部分；一半導體主動層，該半導體主動層與該閘電極的一部分重疊且位於該閘極絕緣層上；一閘線，該閘線接觸該閘電極的其他部分並延伸在該基板的水平方向上；一中間絕緣層，該中間絕緣層暴露該半導體主動層的中間部分並覆蓋該閘線和閘電極；一資料線，該資料線延伸在該基板的垂直方向上且位於該中間絕緣層上；一源電極，該源電極分支自該資料線並接觸該半導體主動層的一側；以及一汲電極，該汲電極與該源電極相對一預定距離面對並接觸該半導體主動層的另一側。
該薄膜電晶體基板進一步包括：一鈍化層，該鈍化層覆蓋該 源電極和該汲電極；一像素接觸孔，藉由穿過該鈍化層，該像素接觸孔暴露該汲電極的一部分；以及一像素電極，該像素電極通過該像素接觸孔接觸該汲電極。
該薄膜電晶體基板進一步包含：一彩色濾光片層，該彩色濾 光片層設置在該鈍化層上並在該像素電極之下；以及一保護層，該保護層設置在該像素電極之下並覆蓋該彩色濾光片層。
該彩色濾光片層填充由該閘線和該資料線所圍繞的一像素區 域的內區域，並覆蓋對應於包括該半導體主動層的該薄膜電晶體的區域。
該閘電極包括一銅材料。
該資料線包括一具有銅的低電阻層以及一具有鉬的保護層。
一種薄膜電晶體基板的製造方法，包括：將一閘電極金屬材 料、一閘極絕緣材料以及一金屬氧化物材料沉積在一基板上，並且然後進行一熱處理；藉由圖案化該閘電極金屬材料、該閘極絕緣材料以及該金氧半導體材料，形成一閘電極、一閘極絕緣層以及一半導體主動層；形成一閘線，該閘線接觸該閘電極的一部分並延伸在該基板的水平方向上；形成一中間絕緣層，該中間絕緣層覆蓋該閘線和該閘電極並暴露該半導體主動層的中間部分；以及形成一資料線、一源電極以及一汲電極，其中該資料線延伸在該中間絕緣層的垂直方向上，該源電極分支自該資料線並接觸該半導體主動層的一側，該汲電極與該源電極相對一預定距離面對並接觸該半導體主動層的另一側。
該製造方法進一步包括：形成一鈍化層，該鈍化層覆蓋該資 料線、該源電極以及該半導體主動層，並且包括一像素接觸孔，該像素接觸孔暴露該汲電極的一部分；以及形成一像素電極，該像素電極通過該像素接觸孔接觸該汲電極，並且該像素電極位於該鈍化層上。
在形成該像素電極之前，該製造方法進一步包括：形成一彩 色濾光片層，該彩色濾光片層在該鈍化層上，填充由該閘線和該資料線所圍繞的像素區域，並覆蓋對應於包括該半導體主動層的該薄膜電晶體的區域；以及形成一保護層，該保護層覆蓋該彩色濾光片層。
該閘電極包括一銅材料。
藉由沉積一具有鉬的保護層及一具有銅的低電阻層並圖案化 該保護層及該低電阻層，形成該資料線、該源電極和該汲電極。
藉由一乾蝕刻製程，圖案化該包括鉬的保護層。
根據本發明，該閘電極材料、該閘極絕緣材料及該金氧半導 體材料沉積在該基板的表面上，在高溫條件下進行一熱處理，然後圖案化該閘電極及該主動層。因此，可提高該金氧半導體通道(主動)層的特性。根據本發明，該薄膜電晶體基板不需要形成用於保護該半導體通道層的蝕刻阻擋。儘管當需要蝕刻阻擋時，由於該蝕刻阻擋可利用設置在該閘線與該資料線之間的該中間絕緣層的圖案而形成，因此不需要任何額外的 微影蝕刻步驟。因此，可利用較少數量的光罩製程來製造具有提高特性及高穩定性的薄膜電晶體基板。
DPH‧‧‧資料墊接觸孔
DP‧‧‧資料墊
DPT‧‧‧資料墊終端
CL‧‧‧公共線
COM‧‧‧公共電極
PXL‧‧‧像素電極
GL‧‧‧閘線
S‧‧‧源電極
A‧‧‧主動層
G‧‧‧閘電極
D‧‧‧汲電極
T‧‧‧薄膜電晶體
ES‧‧‧蝕刻阻擋
DL‧‧‧資料線
GP‧‧‧閘極墊
GPH‧‧‧閘極墊接觸孔
GPT‧‧‧閘極墊終端
PAS‧‧‧鈍化層
GI‧‧‧閘極絕緣層
SUB‧‧‧基板
MT‧‧‧金屬層
SE‧‧‧金氧半導體層
IN‧‧‧中間絕緣層
PH‧‧‧像素接觸孔
CF‧‧‧彩色濾光片
OC‧‧‧保護層
所附圖式，其中提供關於本發明實施例的進一步理解並且結合與構成本說明書的一部份，說明本發明的實施例並且與描述一同提供對於本發明實施例之原則的解釋。
圖式中：第1圖為說明根據現有技術之包括在具有邊緣場型液晶顯示器內的氧化物半導體層的薄膜電晶體基板的平面圖。
第2圖為說明根據現有技術之沿著I-I’線切割第1圖的薄膜電晶體基板結構的剖面圖。
第3圖為說明根據本發明之含有金氧半導體材料的薄膜電晶體基板的結構的平面圖。
第4A圖至第4G圖為說明沿著第3圖II-II’線切割，根據本發明第一實施例用於製造含有金氧半導體材料之液晶顯示器的薄膜電晶體基板的方法步驟的剖面圖。
第5A圖和第5C圖為說明藉由沿著第3圖II-II’線切割，根據本發明第二實施例用於製造含有金氧半導體材料之有機發光顯示器的薄膜電晶體基板的方法步驟的剖面圖。
參見所附圖式，將解釋本發明的較佳實施例。貫穿全文說明相似的數位代表相似元件。在不改變技術精神下，實施例可實施各種變化或變更，並不限於本發明所描述的實施例。在以下實施例中，考慮到解釋便利，選擇元件名稱，從而元件的名稱可能與真實名稱不同。
參見含第3圖以及第4A至4G圖的所附圖式，將解釋根據本發明第一實施例之用於製造含有金氧半導體材料的薄膜電晶體基板的方 法。第3圖為說明根據本發明之含有金氧半導體材料的薄膜電晶體基板的結構的平面圖。第4A圖至第4G圖為說明沿著第3圖II-II’線切割，根據本發明第一實施例之用於製造含有金氧半導體材料的液晶顯示器的薄膜電晶體基板的方法步驟的剖面圖。
首先，參見第3圖及第4G圖，將解釋根據本發明第一實施 例之液晶顯示器的薄膜電晶體基板。根據像素及公共電極的設置關係，該液晶顯示器可分為垂直電場型及水平電場型。本發明提出一種薄膜電晶體基板，該薄膜電晶體基板可用於上述兩種類型。因此，在第3圖中，未顯示公共電極，並且，如果需要的話將單獨解釋公共電極COM的結構。
根據本發明第一實施例之含有金氧半導體的薄膜電晶體基板 包含像素區域，該像素區域由沿著基板SUB水平方向的閘線GL與沿著垂直方向的資料線DL的交叉結構所定義。在該像素區域的一角落，設置薄膜電晶體T。由薄膜電晶體T驅動的像素電極PXL佔據了像素區域的幾乎所有的部份。該薄膜電晶體T包含閘電極G、半導體主動層A、源電極S以及汲電極D，其中該半導體主動層A與該閘電極G重疊並位於閘極絕緣層GI上，該源電極S接觸該主動層A的一側，並且汲電極D面對該源電極S並接觸該主動層A的另一側。
閘線GL具有閘極墊GP，並連接至薄膜電晶體T的閘電極 G，其中閘極墊GP設置在閘線GL的一端處。特別地，藉由消除閘極絕緣層GI的一部分而暴露的閘電極G的一部分連接閘線GL以形成閘線GL與閘電極G之間的電連接。資料線DL具有資料墊DP，並連接至薄膜電晶體T的源電極S，其中該資料墊DP設置在資料線DL的一端。特別地，源電極S直接分支於資料線DL。
以下，進一步參見第4A圖至第4G圖，將解釋根據本發明 第一實施例之製造含有金氧半導體的薄膜電晶體的方法。
如第4A圖所示，在透明基板SUB上，依次沉積用於閘電極 G的金屬層MT、閘極絕緣層GI以及金氧半導體層SE。較佳地，閘極絕緣層GI由氧化矽(SiOx)製成，其在製造過程期間產生少量的氫離子或氫材料。金氧半導體層SE可包括IGZO(或銦鎵鋅氧化物)或ITZO(銦錫鋅氧化物)。在該三層依次沉積在基板SUB上之後，在300℃或更高溫 度條件下進行熱處理。從而，可穩定金氧半導體層SE的物理特性並可確保其高可靠性。
藉由第一光罩製程，圖案化包括用於閘電極G的金屬層 MT、閘極絕緣層及金氧半導體層SE等依次沉積的層，形成閘電極G及半導體主動層A。在閘電極G與半導體主動層A之間，夾有閘極絕緣層GI。這裏，閘電極G的一側暴露，用於連接閘線GL。因此，閘電極G的一側上的閘極絕緣層GI及金氧半導體層SE的一部分應被選擇性地移除。為此，在第一光罩製程中，該光罩為半調式光罩。詳細地，閘電極G形成矩形，閘極絕緣層GI形成以具有與閘電極G相似的形狀，其中閘極絕緣層GI覆蓋除了部分端部之外的閘電極的大部分。此外，半導體主動層A可具有與閘極絕緣層GI相同的形狀。
在形成閘電極G之前，對形成閘電極G的金屬層MT以及 沉積在基板SUB所有表面上的金氧半導體層進行熱處理，所有基板上熱應力分佈均一，從而基板SUB可保持在平面條件中。如果如第4B圖所示，在圖案化閘電極G及主動層A之後進行用於主動層A使之穩定的熱處理，由於金屬材料，閘電極G未能均勻分佈於基板SUB之上，基板SUB可變形、扭曲、彎曲或損壞。
在具有閘電極G及半導體主動層A的基板SUB上，沉積用 於閘線GL的金屬層。如第4B所示，藉由第二光罩製程，圖案化該金屬層，形成閘線GL，該閘線GL延伸在基板SUB上的水平方向上，用以連接閘電極G。此外，在閘線GL的一端，形成閘極墊GP。用於閘線GL的金屬層可包括銅(Cu)或銅合金。例如，用於閘線GL的金屬層可由雙層金屬材料製成，該雙層金屬材料如Cu/Mo-Ti(銅/鉬-鈦)，Cu-合金/Mo(銅合金/鉬)，或者Cu-合金/Mo-Ti(銅合金/鉬-鈦)。另外，用於閘線GL的金屬層可由三層金屬材料製成，如Mo/Cu/Mo(鉬/銅/鉬)，Mo-Ti/Cu/Mo-Ti(鉬-鈦/銅/鉬-鈦)，或者Mo-Ti/Cu-合金/Mo-Ti(鉬-鈦/銅合金/鉬-鈦)。
在高溫處理條件下，銅材料較弱。因此，在沉積/形成閘線 GL的金屬層之後，較佳的是在高於400℃的高溫處理條件下不暴露。在本發明中，在對閘電極G和主動層A進行熱處理之後沉積/形成閘線GL，從而可確保包括在閘線GL內的銅材料的穩定性。
在具有閘線GL和閘極墊GP的基板SUB上，藉由沉積氧化 矽(SiOx)，形成中間絕緣層IN。利用第三光罩製程，如第4D圖所示，圖案化中間絕緣層IN，半導體主動層A的上表面的某些部分(尤其是中間部分)暴露以接觸源-汲電極S和D。由於藉由第4A圖所示的製程進行熱處理，半導體層A已被穩定且可靠性已被提高，因此即使暴露於該圖案化製程，半導體層A的穩定性及可靠性也不會降低。即使圖式中未顯示，如果需要，在除了與源-汲電極S和D接觸的區域之外的實際通道區域上，中間絕緣層IN將保持以保護主動層A的通道區域更為堅固。
利用暴露通道層A的表面的中間絕緣層IN，源-汲金屬層沉 積在基板SUB上。藉由第四光罩製程圖案化該源-汲金屬層，形成資料線DL、源電極S以及汲電極D，其中該資料線DL延伸在基板SUB上的垂直方向上，該源電極S分支於資料線DL並接觸半導體層A的一側，該汲電極D與源電極S分開面對並接觸半導體層A的另一側。此外，在資料線DL的一端，形成資料墊DP。因此，完成含有金氧半導體材料的薄膜電晶體T，如第4E圖所示。
該源-汲金屬層可具有雙層或三層結構，其中包括鉬(Mo) 或鉬-鈦(Mo-Ti)的保護層與包括銅的低電阻層交替堆積為兩層或三層。例如，該源-汲金屬層可具有包括Ti/Cu/Mo-Ti的三層結構或者包括Cu/Mo-Ti的雙層結構。利用包括鉬的保護層接觸金氧半導體主動層A的結構，當圖案化該源-汲金屬層時，該保護層將藉由乾蝕刻方法被圖案化。藉由第4A圖中的熱處理，穩定性及可靠性提高。此外，藉由利用乾蝕刻法用於圖案化該源-汲電極，半導體主動層A可被保護在穩定及可靠條件中。也就是說，利用該乾蝕刻法，對主動層A的穩定性及可靠性影響較小，可在無蝕刻阻擋下保持該半導體主動層A的特性。
在具有薄膜電晶體T、沉積氧化矽(SiOx)的基板SUB的 整個表面上，形成鈍化層PAS。藉由第五光罩製程圖案化該鈍化層PAS，形成像素接觸孔PH，該像素接觸孔PH暴露汲電極D的一部分。同時，形成資料墊接觸孔DPH，該資料墊接觸孔DPH暴露資料墊DP。此外，連續圖案化鈍化層PAS及中間絕緣層IN，形成閘極墊接觸孔GPH，該閘極墊接觸孔GPH暴露閘極墊GP，如第4F圖所示。
在具有接觸孔PH、GPH和DPH的基板SUB上，沉積透明 導電材料，該透明導電材料包括ITO(氧化銦錫)或IZO(氧化銦鋅)。藉由第六光罩製程圖案化該透明導電材料，像素電極PXL通過像素接觸孔PH接觸汲電極D並佔據大部分像素區域。此外，形成閘極墊終端GPT以及資料墊終端DPG，其中該閘極墊終端GPT通過閘極墊接觸孔GPH接觸閘極墊GP，該資料墊終端DPT通過資料墊接觸孔DPH接觸資料墊DP，如第4G圖所示。
即使圖式未顯示，對於垂直電場LCD的情況，公共電極進 一步形成在上基板上，其中上基板面對第4G圖所示的薄膜電晶體基板且於該兩基板之間具有液晶層。反之，對於水平電場LCD的情況，第二鈍化層進一步形成在具有像素電極PXL的基板SUB上，以及公共電極進一步形成在該第二鈍化層上。
本發明的第一實施例解釋了用於製造含有金氧半導體材料的 薄膜電晶體基板的方法。本發明的思想可應用於有機發光二極體顯示器的薄膜電晶體基板。在該情況中，製造方法類似於第一實施例所述的方法。以下，進一步參考第4F圖和第5A圖至第5C圖，將解釋根據本發明第二實施例之用於製造薄膜電晶體基板的方法。第5A圖和第5C圖為說明藉由沿著第3圖II-II’線切割，根據本發明第二實施例之用於製造含有金氧半導體材料的有機發光顯示器的薄膜電晶體基板的方法步驟的剖面圖。
如第4F圖所示，形成覆蓋薄膜電晶體T的鈍化層PAS。藉 由第五光罩製程圖案化鈍化層PAS，分別形成暴露汲電極D、閘極墊GP和資料墊DP的接觸孔(如像素接觸孔PH、閘極墊接觸孔GPH和資料墊接觸孔DPH)。
藉由第六光罩製程，在鈍化層PAS上沉積顏料層，並圖案 化該顏料層，形成彩色濾光片CF。較佳的是，該彩色濾光片CF佔據由閘線GL和資料線DL的交叉結構所定義的像素區域的大部分區域。此外，藉由保持彩色濾光片CF於薄膜電晶體T上，可使薄膜電晶體T免受自外部環境入射的光。利用該結構，可進一步確保半導體主動層A的穩定性及可靠性。在每個像素區域，紅色、綠色和藍色的彩色顏料沉積以形成彩色 濾光片CF。因此，為了完成該彩色濾光片CF，應依次進行至少三個光罩製程，如第5A圖所示。
為了減少光罩製程的數量，當圖案化彩色濾光片CF時，鈍 化層PAS被同時圖案化，用於形成接觸孔PH、GPH和DPH。然而，當彩色濾光片CF遠厚於鈍化層PAS時，難以同時圖案化彩色濾光片CF及鈍化層PAS。在這種情況下，首先圖案化鈍化層PAS，形成接觸孔PH、GPH和DPH，之後，當圖案化彩色濾光片CF時，對應於接觸孔PH、GPH和DPH的區域被開放。
在具有彩色濾光片CF的基板SUB上，沉積保護層材料。藉 由第七光罩製程圖案化該保護層材料，形成保護層OC，該保護層具有保留接觸孔PH、GPH和DPH的開口，如第5B圖所示。
在具有保護層OC的基板SUB上，沉積透明導電材料，如 ITO(氧化銦錫)或IZO(氧化銦鋅)。藉由第八光罩製程圖案化該透明導電材料，形成像素電極PXL，該像素電極PXL通過像素接觸孔PH接觸汲電極D並佔據像素區域的大部分區域。此外，形成閘極墊終端GPT以及資料墊終端DPG，其中該閘極墊終端GPT通過閘極墊接觸孔GPH接觸閘極墊GP，該資料墊終端DPT通過資料墊接觸孔DPH接觸資料墊GP(此處應為DP)，如第5C圖所示。
之後，即使圖式未顯示，藉由形成堤岸層並層積有機發光層 和第二電極層，可完成有機發光二極體顯示器。
如上所述，在本發明中，閘電極材料、閘極絕緣材料以及金 氧半導體材料依次沉積在基板的整個表面上，進行熱處理，並且然後形成閘電極和半導體主動層。因此，可提高半導體材料的特性並大大確保其可靠性。
儘管參考附圖已詳細描述本發明的實施例，應理解的是對於 本領域技術人員來說在不改變本發明的技術精神或基本特徵的範圍內，本發明可以其他具體形式實施。因此，應注意的是，前述實施例在各方面僅為說明性並不旨在限制本發明。藉由所附專利申請範圍而不是本發明的詳細說明來定義本發明的範圍。在專利申請範圍的含義及範圍內作出的所有改變或修飾或該等等效範圍應落入本發明的範圍內。
本申請要求於2012年6月26日提交的韓國專利申請第10-2012-0068440號的權益，為所有目的將該申請的全部內容藉由引用結合於此。
DPH‧‧‧資料墊接觸孔
DP‧‧‧資料墊
DPT‧‧‧資料墊終端
PXL‧‧‧像素電極
GL‧‧‧閘線
S‧‧‧源電極
A‧‧‧主動層/半導體主動層
G‧‧‧閘電極
D‧‧‧汲電極
T‧‧‧薄膜電晶體
DL‧‧‧資料線
GP‧‧‧閘極墊
GPH‧‧‧閘極墊接觸孔
GPT‧‧‧閘極墊終端
PAS‧‧‧鈍化層
GI‧‧‧閘極絕緣層
SUB‧‧‧基板
IN‧‧‧中間絕緣層
PH‧‧‧像素接觸孔

Claims (12)

  1. 一種薄膜電晶體基板，包括：一閘電極，該閘電極形成在一基板上；一閘極絕緣層，該閘極絕緣層覆蓋該閘電極的一部分並暴露該閘電極的其他部分；一半導體主動層，該半導體主動層與該閘電極的一部分重疊且位於該閘極絕緣層上；一閘線，該閘線接觸該閘電極的其他部分並延伸在該基板的水平方向上；一中間絕緣層，該中間絕緣層暴露該半導體主動層的中間部分並覆蓋該閘線和閘電極；一資料線，該資料線延伸在該基板的垂直方向上且位於該中間絕緣層上；一源電極，該源電極分支自該資料線並接觸該半導體主動層的一側；以及一汲電極，該汲電極與該源電極相對於一預定距離面對並接觸該半導體主動層的另一側。
  2. 依據申請專利範圍第1項所述的薄膜電晶體基板，進一步包括：一鈍化層，該鈍化層覆蓋該源電極和該汲電極；一像素接觸孔，藉由穿過該鈍化層，該像素接觸孔暴露該汲電極的一部分；以及一像素電極，該像素電極通過該像素接觸孔接觸該汲電極。
  3. 依據申請專利範圍第2項所述的薄膜電晶體基板，進一步包括：一彩色濾光片層，該彩色濾光片層設置在該鈍化層上並在該像素電極之下；以及一保護層，該保護層設置在該像素電極之下並覆蓋該彩色濾光片層。
  4. 依據申請專利範圍第3項所述的薄膜電晶體基板，其中，該彩色濾光片層填充由該閘線和該資料線所圍繞的一像素區域的內區域，並覆蓋對應於包括該半導體主動層的該薄膜電晶體的區域。
  5. 依據申請專利範圍第1項所述的薄膜電晶體基板，其中，該閘電極包括一銅材料。
  6. 依據申請專利範圍第1項所述的薄膜電晶體基板，其中，該資料線包括一具有銅的低電阻層以及一具有鉬的保護層。
  7. 一種薄膜電晶體基板的製造方法，包括：將一閘電極金屬材料、一閘極絕緣材料以及一金屬氧化物材料沉積在一基板上，並且然後進行一熱處理；藉由圖案化該閘電極金屬材料、該閘極絕緣材料以及該金屬氧化物材料，形成一閘電極、一閘極絕緣層以及一半導體主動層；形成一閘線，該閘線接觸該閘電極的一部分並延伸在該基板的水平方向上；形成一中間絕緣層，該中間絕緣層覆蓋該閘線和該閘電極並暴露該半導體主動層的中間部分；以及形成一資料線、一源電極以及一汲電極，其中該資料線延伸在該中間絕緣層的垂直方向上，該源電極分支自該資料線並接觸該半導體主動層的一側，該汲電極與該源電極相對於一預定距離面對並接觸該半導體主動層的另一側。
  8. 依據申請專利範圍第7項所述之薄膜電晶體基板的製造方法，進一步包括：形成一鈍化層，該鈍化層覆蓋該資料線、該源電極以及該半導體主動層，並且包括一像素接觸孔，該像素接觸孔暴露該汲電極的一部分；以及 形成一像素電極，該像素電極通過該像素接觸孔接觸該汲電極，並且該像素電極位於該鈍化層上。
  9. 依據申請專利範圍第8項所述之薄膜電晶體基板的製造方法，在形成該像素電極之前，進一步包括：形成一彩色濾光片層，該彩色濾光片層在該鈍化層上，填充由該閘線和該資料線所圍繞的一像素區域，並覆蓋對應於包括該半導體主動層的該薄膜電晶體的區域；以及形成一保護層，該保護層覆蓋該彩色濾光片層。
  10. 依據申請專利範圍第7項所述之薄膜電晶體基板的製造方法，其中，該閘電極包括一銅材料。
  11. 依據申請專利範圍第7項所述之薄膜電晶體基板的製造方法，其中，藉由沉積一具有鉬的保護層及一具有銅的低電阻層並圖案化該保護層及該低電阻層，形成該資料線、該源電極和該汲電極。
  12. 依據申請專利範圍第11項所述之薄膜電晶體基板的製造方法，其中，藉由一乾蝕刻製程，圖案化該包括鉬的保護層。
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