TW201332284A - 壓電模組 - Google Patents

壓電模組 Download PDF

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Publication number
TW201332284A
TW201332284A TW102102487A TW102102487A TW201332284A TW 201332284 A TW201332284 A TW 201332284A TW 102102487 A TW102102487 A TW 102102487A TW 102102487 A TW102102487 A TW 102102487A TW 201332284 A TW201332284 A TW 201332284A
Authority
TW
Taiwan
Prior art keywords
package
crystal
piezoelectric
recessed portion
wall layer
Prior art date
Application number
TW102102487A
Other languages
English (en)
Chinese (zh)
Inventor
播磨秀典
浅村文雄
Original Assignee
日本電波工業股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本電波工業股份有限公司 filed Critical 日本電波工業股份有限公司
Publication of TW201332284A publication Critical patent/TW201332284A/zh

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
    • H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
    • H03B5/36—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/058—Holders or supports for surface acoustic wave devices
    • H03H9/0585—Holders or supports for surface acoustic wave devices consisting of an adhesive layer
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
    • H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
    • H03H9/1021—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device the BAW device being of the cantilever type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
    • H03H9/1071—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the SAW device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/0504—Holders or supports for bulk acoustic wave devices
    • H03H9/0509—Holders or supports for bulk acoustic wave devices consisting of adhesive elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
TW102102487A 2012-01-23 2013-01-23 壓電模組 TW201332284A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012011038 2012-01-23
JP2012057673 2012-03-14
JP2012224426A JP6077813B2 (ja) 2012-01-23 2012-10-09 圧電モジュール

Publications (1)

Publication Number Publication Date
TW201332284A true TW201332284A (zh) 2013-08-01

Family

ID=48796749

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102102487A TW201332284A (zh) 2012-01-23 2013-01-23 壓電模組

Country Status (4)

Country Link
US (1) US8941445B2 (cg-RX-API-DMAC10.html)
JP (1) JP6077813B2 (cg-RX-API-DMAC10.html)
CN (1) CN103219967A (cg-RX-API-DMAC10.html)
TW (1) TW201332284A (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI756206B (zh) * 2016-04-01 2022-03-01 美商英特爾公司 使用壓電封裝積體切換裝置的可調射頻系統

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US9548717B2 (en) * 2012-11-16 2017-01-17 Daishinku Corporation Piezoelectric resonator device using temperature sensor unit
JP2015089095A (ja) * 2013-02-04 2015-05-07 日本電波工業株式会社 表面実装型の低背発振器
JP6173758B2 (ja) 2013-04-24 2017-08-02 日本電波工業株式会社 接合型水晶発振器
JP6284717B2 (ja) * 2013-05-16 2018-02-28 太陽誘電株式会社 電子部品、及び電子部品の製造方法
CN103441745A (zh) * 2013-08-28 2013-12-11 广东合微集成电路技术有限公司 晶体振荡器的封装结构及封装方法
JP2015089102A (ja) 2013-09-24 2015-05-07 日本電波工業株式会社 発振器
JP6738588B2 (ja) * 2014-09-02 2020-08-12 セイコーエプソン株式会社 発振器、電子機器、および移動体
JP6543456B2 (ja) * 2014-10-24 2019-07-10 京セラ株式会社 水晶振動子
JP6350248B2 (ja) * 2014-12-02 2018-07-04 株式会社大真空 圧電発振器
US10170403B2 (en) * 2014-12-17 2019-01-01 Kinsus Interconnect Technology Corp. Ameliorated compound carrier board structure of flip-chip chip-scale package
JP6769220B2 (ja) * 2016-10-03 2020-10-14 セイコーエプソン株式会社 電子部品用パッケージ、発振器、電子機器、および移動体
JP2018074370A (ja) * 2016-10-28 2018-05-10 日本電波工業株式会社 圧電デバイス
US11152910B2 (en) * 2016-11-17 2021-10-19 Daishinku Corporation Piezoelectric resonator device
US11302611B2 (en) * 2018-11-28 2022-04-12 Texas Instruments Incorporated Semiconductor package with top circuit and an IC with a gap over the IC
CN109508097B (zh) * 2019-01-11 2022-04-08 业成科技（成都）有限公司 触觉反馈模块及其制备方法和触控装置
JP7881899B2 (ja) * 2021-11-18 2026-06-30 セイコーエプソン株式会社 振動デバイス
CN117334644B (zh) * 2023-11-29 2024-02-13 四川弘智远大科技有限公司 一种集成电路封装的实时固化结构

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JP3152834B2 (ja) * 1993-06-24 2001-04-03 株式会社東芝 電子回路装置
US5506463A (en) * 1993-08-23 1996-04-09 Rohm Co., Ltd. Packaged piezoelectric oscillator and method of making the same
JP2960374B2 (ja) * 1996-06-17 1999-10-06 松下電器産業株式会社 圧電発振器
JP3570600B2 (ja) * 1997-01-14 2004-09-29 株式会社村田製作所 圧電部品およびその製造方法
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JP3423255B2 (ja) * 1999-06-04 2003-07-07 日本電波工業株式会社 表面実装水晶発振器
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI756206B (zh) * 2016-04-01 2022-03-01 美商英特爾公司 使用壓電封裝積體切換裝置的可調射頻系統

Also Published As

Publication number Publication date
JP6077813B2 (ja) 2017-02-08
US20130187723A1 (en) 2013-07-25
JP2013219738A (ja) 2013-10-24
CN103219967A (zh) 2013-07-24
US8941445B2 (en) 2015-01-27

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