TW201322402A - 半導體裝置 - Google Patents

半導體裝置 Download PDF

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Publication number
TW201322402A
TW201322402A TW101135660A TW101135660A TW201322402A TW 201322402 A TW201322402 A TW 201322402A TW 101135660 A TW101135660 A TW 101135660A TW 101135660 A TW101135660 A TW 101135660A TW 201322402 A TW201322402 A TW 201322402A
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Taiwan
Prior art keywords
conductor
electrode
semiconductor
lead terminal
terminal
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TW101135660A
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English (en)
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TWI495072B (zh
Inventor
Tsuyoshi Seto
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Sharp Kk
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Publication of TWI495072B publication Critical patent/TWI495072B/zh

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Abstract

半導體晶片(3)之閘極電極(4)、源極電極(5)與閘極端子(7)、源極端子(9)係藉由導電體(11a、11b)而分別連接，閘極端子(7)與導電體(11a)之接合部分係以與閘極電極(4)接近之方式配置，源極端子(9)與導電體(11b)之接合部分係以與源極電極(5)接近之方式配置。

Description

半導體裝置
本發明係關於一種搭載功率電晶體等之半導體裝置，尤其係關於一種降低電阻及電感之技術。
先前，主要用於電源電路之電源用電晶體係搭載於以家庭中使用之電器為代表之各種電氣制品，根據用途，提出有各種封裝體及模組。且，自近來之環境問題之影響看，搭載有電源用電晶體之功率裝置及功率模組於電力汽車、及太陽、風力發電裝置等新用途中亦受到矚目，故要求高耐壓化、大電流化、小型化、及輕量化。
又，除上述要求外，功率器件及功率模組亦要求切換速度之提高。藉此，不僅封裝體內部之佈線之電阻及電感，包含外部連接端子之電阻及電感之減少亦逐漸變得特別必要。
此處一般而言，上述功率器件等係由規格所定之封裝體(TO-220或TO-3P等)而實現。且，因先前中無需考慮電阻及電感，故作為外部連接端子之導線端子與半導體晶片於封裝體內之連接係採用打線連接，且使用細導線(金或鋁等)。
但，若為細長導線，則因電阻及電感較大，故難以實現目前要求之電阻及電感之減少。
因此，提出有不使用細導線，直接連接導線端子及半導體晶片之方法。例如，專利文獻1及2中，記載有於半導體 晶片之電極形成特殊之凸塊，將該半導體晶片搭載於導線架後，配置加工成可與半導體晶片之凸塊連接之形狀之導線端子，並與凸塊連接之方法。根據該方法，可將導線端子及半導體晶片以較小之電阻及電感進行電性連接。
[先前技術文獻] [專利文獻]
[專利文獻1]日本公開專利公報「日本專利特開2004-260205號公報(2004年9月16日公開)」
[專利文獻2]日本公開專利公報「日本專利特開2007-251218號公報(2007年9月27日公開)」
然而，上述專利文獻1及2記載之方法中，必須於半導體晶片之電極形成特殊之凸塊之加工步驟等，與先前之使用細導線之打線連接相比，對可使用之半導體晶片產生限制。因此，有不通用之問題。
因此，期待不限制可使用之半導體晶片，以簡易之連接構成，實現電阻及電感之減少。
本發明係為解決上述問題而完成者，其目的在於提供一種可使用通用且簡易之連接構成，減少作為封裝體整體之電阻及電感之半導體裝置。
為解決上述課題，本發明之半導體裝置之特徵在於：包含金屬板、設置於上述金屬板之1個半導體元件、及 電性連接於上述半導體元件之至少3個導線端子；且上述半導體元件係於該半導體元件之第1面具有至少1個電極，且以位於上述第1面之相反側之第2面與上述金屬板對向之方式設置於上述金屬板；上述導線端子係以不與上述半導體元件重合之方式配置；位於上述半導體元件之第1面之各電極與上述導線端子中相互不同之任一導線端子係藉由導電體而分別連接；連接於上述導電體之導線端子與該導電體之接合部分係以與介隔該導電體而連接之電極接近之方式配置。
根據上述構成，因連接於導電體之導線端子與該導電體之接合部分係以與介隔該導電體而連接之電極接近之方式配置，故可縮短連接導線端子及電極之導電體，而可減少導電體之電阻及電感。
又，因上述導電體無需如先前般繞成圓弧狀而設置，故可使用具有更大截面積之形狀者。因此，可進而謀求導電體之電阻及電感之減少。
進而，使用導電體之連接係與先前之連接步驟(例如，打線步驟)大致相同之步驟，不會導致步驟之增加。又，可適用於具備通常之電極之半導體元件。
因此，半導體裝置中，可使用通用且簡易之連接構成，減少作為半導體裝置之封裝體整體之電阻及電感。
為解決上述課題，本發明之半導體裝置之特徵在於：包含金屬板、設置於上述金屬板之複數個半導體元件、 及電性連接於上述複數個半導體元件之至少3個導線端子；且上述複數個半導體元件之各者係於該半導體元件之第1面具有至少1個電極，且以位於上述第1面之相反側之第2面與上述金屬板對向之方式設置於上述金屬板；上述導線端子係以不與上述複數個半導體元件重合之方式配置；位於上述複數個半導體元件之各第1面之所有電極中至少1個電極與上述導線端子中相互不同之任一導線端子係藉由導電體而分別連接；連接於上述導電體之導線端子與該導電體之接合部分係以與介隔該導電體而連接之電極接近之方式配置。
根據上述構成，因連接於導電體之導線端子與該導電體之接合部分係以與介隔該導電體而連接之電極接近之方式配置，故可縮短連接導線端子及電極之導電體，而可減少導電體之電阻及電感。
又，因上述導電體無需如先前般繞成圓弧狀而設置，故可使用具有更大截面積之形狀者。因此，可進而謀求導電體之電阻及電感之減少。
進而，使用導電體之連接係與先前之連接步驟(例如，打線步驟)大致相同之步驟，不會導致步驟之增加。又，可適用於具備通常之電極之半導體元件。
因此，於因具備複數個半導體元件而連接部分變多之構成中，亦可使用通用且簡易之連接構成，減少作為半導體 裝置之封裝體整體之電阻及電感。
如上所述，本發明之半導體裝置中，位於上述半導體元件之第1面之各電極與上述導線端子中相互不同之任一導線端子係藉由導電體而分別連接，且連接於上述導電體之導線端子與該導電體之接合部分係以與介隔該導電體而連接之電極接近之方式配置。因此，發揮如下效果：可使用通用且簡易之連接構成，減少作為半導體裝置之封裝體整體之電阻及電感。
以下之各實施形態中，對MOSFET(Metal Oxide Semiconductor Field Effect Transistor，金氧半場效電晶體)等功率電晶體進行說明。該功率電晶體般之半導體裝置具有規格所規定之封裝體。此處，作為一例，對具有符合TO-220之規格品之封裝體形態之半導體裝置進行說明，但封裝體形態並不限於此。
[實施形態1]
如下所述，基於圖示對本發明之一實施形態進行說明。
(半導體裝置之概略構成)
圖1係表示本實施形態之半導體裝置1之一構成例之圖，圖1(a)表示俯視，圖1(b)表示圖1(a)中所示之A-A'線剖面視，圖1(c)表示(a)中所示之B-B'線剖面視。再者，圖1(a)係部分透過模製樹脂10而圖示。
如圖1所示，半導體裝置1具備頭座(金屬板)2、半導體 晶片(半導體元件)3、閘極端子(第3導線端子)7、汲極端子(第1導線端子)8、源極端子(第2導線端子)9、模製樹脂(密封樹脂)10、及間隔件12。半導體裝置1係對應於TO-220之規格品。
頭座2係包含金屬(銅或鋁等)之板狀之台座。於頭座2之一面(以下設為上表面)設有半導體晶片3、閘極端子7、汲極端子8、源極端子9、模製樹脂10、及間隔件12。頭座2之一面之相反側之面(以下設為下表面)露出。
半導體晶片3係形成有具有閘極電極4、源極電極5、及汲極電極之功率器件(例如MOSFET等)之半導體元件。閘極電極4及源極電極5係形成於半導體晶片3之一面(第1面：以下設為上表面)，汲極電極係形成於半導體晶片3之與一面為相反側之面(第2面：以下設為下表面)。
半導體晶片3係以下表面與頭座2對向之方式設置於頭座2，例如，藉由晶片接合等固定於頭座2。藉此，半導體晶片3之汲極電極係與頭座2電性連接。
閘極端子7、汲極端子8及源極端子9係包含金屬(銅或鋁等)之端子。閘極端子7、汲極端子8及源極端子9係在圖1(a)所示之俯視中，以相互平行之方式排列。閘極端子7係與半導體晶片3之閘極電極4電性連接。汲極端子8係與頭座2、即半導體晶片3之汲極電極電性連接。源極端子9係與半導體晶片3之源極電極5電性連接。關於閘極端子7、汲極端子8及源極端子9之封裝體內之連接構造，於下文進行詳細敍述。
間隔件12係設於閘極端子7與頭座2之間，及源極端子9與頭座2之間共計2個部位。間隔件12作為閘極端子7及源極端子9之支撐(接合時之強度確保)而發揮功能。間隔件12例如包含熱固性之環氧樹脂，但並不限於此，只要作為支撐而可確保充分之強度，且為絕緣性之固體材料則無特別限定。
模製樹脂10係將頭座2之一部分、半導體晶片3、閘極端子7之一部分、汲極端子8之一部分、源極端子9之一部分、及間隔件12由絕緣性樹脂(例如，黑色)進行密封。閘極端子7、汲極端子8、及源極端子9係自模製樹脂10之同一側面突出，而可作為可與外部連接之端子(外部連接端子)發揮功能。
(導線端子之連接構造)
接著，對閘極端子7、汲極端子8、及源極端子9之封裝體內之連接構造進行詳細說明。再者，以下，將圖1(b)之上下方向及圖1(c)之左右方向作為「平面方向」，將圖1(b)之左右方向及圖1(c)之上下方向作為「高度方向」。
3個導線端子(閘極端子7、汲極端子8、及源極端子9)之位於模製樹脂10外之部分係預先決定其配置(平面方向及高度方向之配置)。例如，在平面方向上，3個導線端子之位於模製樹脂10外之部分係以對應於規格之特定間隔進行配置。又，在高度方向上，若以頭座2之下表面為基準，則3個導線端子之位於模製樹脂10外之部分係位於較頭座2之上表面及半導體晶片3之上表面更遠離頭座2之下表面之 位置，即高於頭座2之上表面及半導體晶片3之上表面之位置。
因此，上述3個導線端子係以可最佳地與頭座2或半導體晶片3之各電極連接之方式，在模製樹脂10內研究其配置、形狀，或追加零件(間隔件12)。
汲極端子8係由焊料等直接接合於頭座2。因此，汲極端子8係以汲極端子8與頭座2之接合部分(端子之一端)與頭座2之上表面形成相同高度之方式，在模製樹脂10之內部彎曲。
閘極端子7及源極端子9具有使用導電體11a、11b之相同之連接構造。亦即，閘極端子7係介隔導電體11a而連接於半導體晶片3之閘極電極4，源極端子9係介隔導電體11b而連接於半導體晶片3之源極電極5。
作為導電體11a、11b係使用金屬導線。再者，實現導電體11a、11b之金屬導線與先前之打線中使用之細長金屬導線不同，其為粗而短之金屬導線。因此，導電體11a、11b之剖面與先前相比面積較大，且具有圓形或橢圓形之形狀。但，作為導電體11a、11b，並不限於上述般具有相對柔軟性之金屬導線，亦可使用粗而短，剖面多邊形之板狀之金屬體。又，導電體11a、11b之材質可使用先前普通之寬幅之材質。再者，若考慮電阻值或製造成本之點，則較佳為剖面形狀為圓形、橢圓形、四角形，材質為銅或鋁。
於使用金屬導線作為導電體11a、11b之情形時，利用超聲波黏接進行接合。於使用板狀金屬體作為導電體11a、 11b之情形時，利用接著焊膏(主要為焊料膏)進行接合。
因此，使用導電體11a、11b之半導體裝置1中，無需為連接而對半導體晶片3進行先前般特別之加工步驟。因此，可以直接使用作為通用品生產之半導體晶片等，與先前之封裝體相同之步驟製造半導體裝置1，且可應對廣泛用途。
又，俯視時，與作為閘極端子7之一端之導電體11a之接合部分係以不與半導體晶片3重合，且與半導體晶片3之閘極電極4接近之方式進行配置。又，俯視時，與作為源極端子9之一端之導電體11b之接合部分係以不與半導體晶片3重合，且與半導體晶片3之源極電極5接近之方式進行配置。藉此，可縮短導電體11a、11b之長度(平面方向之長度)。
亦即，閘極端子7係以導電體11a之長度為最短之方式，延設至半導體晶片3之閘極電極4之附近。又，源極端子9係以導電體11b之長度為最小之方式，延設至半導體晶片3之源極電極5之附近。但，半導體晶片3與接近半導體晶片3而配置之閘極端子7及源極端子9之間並不接觸，而設有間隙。其原因如下。
半導體裝置1之製造步驟包含：實裝步驟，其係將半導體晶片3焊接於頭座2；連接步驟，其係連接半導體晶片3及3個導線端子；及密封步驟，其係形成模製樹脂10而密封半導體晶片3等。接著，先於上述實裝步驟之階段中，3個導線端子成為一體形成之導線架之形態，上述實裝步驟 中，於安置有該導線架之頭座2實裝有半導體晶片3。
因此，導線端子之位置係考慮半導體晶片3之搭載偏移，以不干涉半導體晶片3之方式設定(導線端子成為在搭載半導體晶片3時不會成為妨礙之形狀)。上述半導體晶片3之搭載偏移係依存於將半導體晶片3搭載於頭座2之裝置(黏晶機)之精度，或選取半導體晶片3之夾具(筒夾)之形狀等。再者，上述導線架係於上述密封步驟後進行切斷，作為3個導線端子而提供。
藉此，由導電體11a連接之閘極電極4及閘極端子7之平面方向上之兩者之配置距離成為考慮半導體晶片3之搭載偏移而規定之最小距離。又，由導電體11b連接之源極電極5及源極端子9之平面方向上之兩者之配置距離成為考慮半導體晶片3之搭載偏移而規定之最小距離。
另一方面，高度方向上，與導電體11a接合之閘極端子7之接合部分與半導體晶片3之閘極電極4之接合部分(半導體晶片3之上表面)形成相同高度。亦即，閘極端子7係以閘極端子7之與導電體11a之接合部分，與半導體晶片3之閘極電極4之接合部分形成相同高度之方式，在模製樹脂10之內部彎曲。
又，高度方向上，與導電體11b接合之源極端子9之接合部分與半導體晶片3之源極電極5之接合部分(半導體晶片3之上表面)形成相同高度。亦即，源極端子9係以源極端子9之與導電體11b之接合部分，與半導體晶片3之源極電極5之接合部分形成相同高度之方式，在模製樹脂10之內部彎 曲(參照圖1(b))。
如此，半導體晶片3之閘極電極4與導電體11a之接合面，及閘極端子7與導電體11a之接合面為相同高度，半導體晶片3之源極電極5與導電體11b之接合面，及源極端子9與導電體11b之接合面為相同高度，藉此可將導電體11a、11b製成單純之形狀，尤其直線狀(可使用直線狀者)，結果可使導電體11a、11b為最小限度之長度。
再者，閘極端子7及源極端子9係如上所述介隔間隔件12而支撐於頭座2。各間隔件12係分別配置於閘極端子7與導電體11a之接合部分之下方，及源極端子9與導電體11b之接合部分之下方。因此，亦可使間隔件12有助於閘極端子7及源極端子9之高度調整。
又，由具有大剖面面積之導電體11a、11b連接半導體晶片3之電極及導線端子時，藉由以例如電阻較低之銅為材料而即便於導線端子之強度不足之情形時，亦可藉由間隔件12及頭座2而支撐導線端子(確保強度)，故可於保持導線端子之高度之狀態下進行連接。
藉由如上所述，可使半導體裝置1中，導電體11a、11b之長度為最小，而可將導電體11a、11b之電阻及電感抑制為最小限度。
繼而，使用導電體11a、11b之連接係與先前之連接步驟(例如打線步驟)大致相同之步驟，不會導致步驟之增加。又，可適用於具備通常之電極之半導體晶片。因此，半導體裝置1中，可使用通用且簡易之連接構成，減少作為封 裝體整體之電阻及電感。
再者，上述半導體裝置1中，將閘極電極4與導電體11a之接合面，與閘極端子7與導電體11a之接合面設為相同高度，且將源極電極5與導電體11b之接合面，與源極端子9與導電體11b之接合面設為相同高度，此處所謂「相同高度」係除嚴格而言之相同高度外，亦包含可視為相同高度之範圍(「大致相同高度」)。又，於可將導電體11a、11b製成直線狀之點中，此處所謂「直線狀」係除嚴格而言之直線狀外，亦包含可視為直線狀之範圍(「大致直線狀」)。
但，較佳為相同高度，但無需一定為相同高度。亦即，可明確藉由如上所述般接近配置導線端子，本實施形態之導電體可短於先前使用之細長導線，從而可減少電阻及電感。又，本實施形態之導電體因無需如先前般繞成圓弧狀而設置，故可使用具有更大截面積之形狀者。因此，亦可進一步謀求電阻及電感之減少。
再者，半導體裝置1中，雖具備間隔件12，但於僅藉由導線端子本身便可確保由導電體(導電體11a、11b)連接半導體晶片3之電極(閘極電極4、源極電極5)及導線端子(閘極端子7、源極端子9)時之強度之情形時，亦可去除間隔件12。
(變化例)
圖2(a)~圖2(d)係表示作為半導體裝置1之變化例之半導體裝置1a~1d之概略構成之圖。
如圖2(a)~圖2(c)所示，半導體裝置1a~1c係於半導體裝置1之構成中具備半導體晶片3a以代替半導體晶片3而成者。半導體晶片3a之上表面具有閘極電極4a及源極電極5a，閘極電極4a及源極電極5a係距離鄰接之3側面等距離地配置。因此，於閘極端子7及源極端子9之配置中存在3個配置圖案。
圖2(a)表示將閘極端子7及源極端子9以自兩側夾持半導體晶片3a之方式配置之構成。該配置構成成為最基本之形狀。
圖2(b)表示將閘極端子7及源極端子9於模製樹脂10內在半導體晶片3a之近前處折彎，且配置於半導體晶片3a之同一側面側(半導體晶片3a之近前側)之構成。折彎角度較佳為45度左右。
圖2(c)表示將閘極端子7及源極端子9以於模製樹脂10內繞行半導體晶片3a之方式折彎，且配置於半導體晶片3a之同一側面側(半導體晶片3a之對向側)之構成。
如圖2(d)所示，半導體裝置1d係於半導體裝置1之構成中具備半導體晶片3b以代替半導體晶片3而成者。半導體晶片3b之上表面具有閘極電極4b及源極電極5b，閘極電極4b及源極電極5b係距離鄰接之3側面等距離地配置。但，半導體晶片3b大於半導體晶片3、3a。
如此之構成中，因由閘極端子7及源極端子9自兩側夾持半導體晶片3b之空間不足，故較佳為使閘極端子7及源極端子9保持其原本之狀態直進，且配置於半導體晶片3b之 近前之同一側面側。
根據上述半導體裝置1a~1d，若著眼於作為封裝體整體之電阻及電感之減少之點，則半導體裝置1d之配置係封裝體內之導體(導線端子等)之長度最短，故形成良好之位置關係。其次較佳為半導體裝置1a、1b之配置。再者，半導體1c之配置於僅搭載1個半導體晶片之封裝體中難以採用(關於具備複數個半導體晶片之形態，於下文進行敍述)。
因此，於存在複數個導電體11a、11b之長度為最小之配置圖案之情形時，自「導線端子之延設方向」、「各導線端子之間隔」、「半導體晶片之形狀及配置」、及「半導體晶片之電極之形成位置」等而言，較佳為考慮「亦儘可能縮短導線端子(防止電阻、電感之增加)」之點、及/或「儘可能為彎曲較小之形狀(防止電感之增加)」之點而決定採用之配置圖案。尤其，「半導體晶片之形狀(大小)」及「半導體晶片之電極之形成位置」成為重要因素。
[實施形態2]
上述實施形態1之半導體裝置1係於1個封裝體搭載1個半導體晶片3者，但並不限於此，亦可於1個封裝體搭載複數個半導體晶片。本實施形態中，作為一例，對在1個封裝體中搭載電性連接之2個半導體晶片之形態進行說明。
再者，本實施形態中說明之內容以外之構成係與上述實施形態1相同。又，為便於說明，對與上述實施形態1之圖示所示之構件具有相同功能之構件附加相同符號，並適當省略其說明。
圖3係表示本實施形態之半導體裝置20之一構成例之圖。再者，圖3係部分透過模製樹脂10而圖示。
如圖3所示，半導體裝置20具備頭座2、半導體晶片(第1半導體元件、第2半導體元件)21、25、閘極端子(第3導線端子)31、汲極端子(第1導線端子)32、源極端子(第2導線端子)33、模製樹脂10、及間隔件12(未圖示)。半導體裝置20係對應於TO-220之規格品，與上述實施形態1之半導體裝置1外觀相同。
半導體晶片21係形成有具有閘極電極22、源極電極23、及汲極電極24之N通道型之功率電晶體(例如GaN)之半導體元件。閘極電極22、源極電極23、及汲極電極24係形成於半導體晶片21之一面(第1面：以下為上表面)。
半導體晶片25係形成有具有閘極電極26、源極電極、及汲極電極27之N通道型之功率電晶體(例如，MOSFET)之半導體元件。閘極電極26及汲極電極27係形成於半導體晶片25之一面(第1面：以下為上表面)，源極電極係形成於半導體晶片25之一面之相反側之面(第2面：以下為下表面)。
半導體晶片21、25係以下表面與頭座2對向之方式分別配置於頭座2，例如，藉由導電性焊膏(焊料膏等)或絕緣片材等固定於頭座2。藉此，半導體晶片25之源極電極與頭座2電性連接。
閘極端子31、汲極端子32及源極端子33係包含金屬(銅或鋁等)之導線端子。閘極端子31、汲極端子32及源極端子33係如圖3所示之俯視時，相互平行地排列。閘極端子 31、汲極端子32及源極端子33係與半導體晶片21、25電性連接。
此處，半導體晶片21、25係級聯(cascode)連接。具體而言，半導體晶片21係汲極電極24電性連接於汲極端子32，源極電極23電性連接於半導體晶片25之汲極電極27，閘極電極22電性連接於源極端子33。半導體晶片25係源極電極電性連接於頭座2，閘極電極26連接於閘極端子31。
又，閘極端子31、汲極端子32及源極端子33與半導體晶片21、25之各電極之間之電性連接係應用與上述實施形態1之半導體裝置1之閘極端子7及源極端子9之連接構造相同之連接構造。亦即，閘極端子31係介隔導電體11c而與半導體晶片25之閘極電極26連接。汲極端子32係介隔導電體11g而與半導體晶片21之閘極電極24連接。源極端子33係介隔導電體11f而與半導體晶片21之閘極電極22連接。
閘極端子31、汲極端子32及源極端子33之形狀及配置係以導電體11c、11g、11f成為最小長度之方式如上所述設定平面方向及高度方向之位置而決定。再者，閘極端子31、汲極端子32及源極端子33之下方設有間隔件12，但視需要亦可省略。
又，半導體晶片21之源極電極23與半導體晶片25之汲極電極27係介隔導電體11d而連接。進而，源極端子33係介隔導電體11e而連接於頭座2。藉此，源極端子33與半導體晶片25之源極電極電性連接。再者，源極端子33-頭座2間之電性連接亦可不使用導電體11e而由焊料連接。
導電體11c~11g具有與上述實施形態1之導電體11a、11b相同之構成(材質、形狀)。
通常，於具備2個半導體晶片21、25之構成中，連接部分變多，相應地電阻值變大。
對此，根據具有上述構成之半導體裝置20，因採用極力減少電阻及電感般之連接構造，故可一面實現高功能之功率器件，一面減少作為封裝體整體之電阻及電感。
又，使用如上所述之導電體之連接構造亦可同樣地適用於1個封裝體中搭載3個以上半導體晶片之情形，且可發揮相同之效果。
再者，於上述各實施形態中，對具備分別對應於閘極、汲極、源極之3個導線端子之構成進行了說明，但導線端子之數量並不限於3。亦即，功率電晶體之封裝體存在多種，封裝體之形狀及導線端子之數量亦多樣。因此，對應於封裝體等，導線端子亦可具備4個以上。即，只要具備分別對應於閘極、汲極、源極之至少3個導線端子即可。
本發明並不限定於上述各實施形態，可於申請專利範圍所示之範圍內進行各種變更，關於將不同實施形態中分別揭示之技術手段進行適當組合所得之實施形態亦包含於本發明之技術範圍中。
[總結]
如上所述，本發明之半導體裝置之特徵在於：包含金屬板、設置於上述金屬板之1個半導體元件、及電性連接於上述半導體元件之至少3個導線端子；且 上述半導體元件係於該半導體元件之第1面具有至少1個電極，且以位於上述第1面之相反側之第2面與上述金屬板對向之方式設置於上述金屬板；上述導線端子係以不與上述半導體元件重合之方式配置；位於上述半導體元件之第1面之各電極與上述導線端子中相互不同之任一導線端子係藉由導電體而分別連接；連接於上述導電體之導線端子與該導電體之接合部分係以與介隔該導電體而連接之電極接近之方式配置。
根據上述構成，因連接於導電體之導線端子與該導電體之接合部分係以與介隔該導電體而連接之電極接近之方式配置，故可縮短連接導線端子與電極之導電體，而可減少導電體之電阻及電感。
又，因上述導電體無需如先前般繞成圓弧狀而設置，故可使用具有更大截面積之形狀者。因此，可進而謀求導電體之電阻及電感之減少。
進而，使用導電體之連接係與先前之連接步驟(例如，打線步驟)大致相同之步驟，不會導致步驟之增加。又，可適用於具備通常之電極之半導體元件。
因此，半導體裝置中，可使用通用且簡易之連接構成，減少作為半導體裝置之封裝體整體之電阻及電感。
又，本發明之半導體裝置中，藉由上述導電體而連接之電極及導線端子較佳為，該電極與該導電體之接合部分與該導線端子與該導電體之接合部分位於相同高度。
根據上述構成，可將導電體設為直線狀。因此，導電體之長度可為最小，而可將導電體之電阻及電感抑制為最小限度。
又，本發明之半導體裝置中，亦可構成為上述導電體具有直線狀之形狀。
又，本發明之半導體裝置中，亦可構成為藉由上述導電體連接之電極及導線端子之兩者之配置距離係考慮上述半導體元件之搭載偏移而規定之最小距離。
又，本發明之半導體裝置中，亦可構成為上述半導體元件於上述第2面進而具有至少1個電極。
又，本發明之半導體裝置中，亦可構成為連接於上述導電體之導線端子係作為可與外部連接之端子發揮功能。
又，本發明之半導體裝置中，較佳為進而具備絕緣性之間隔件，且連接於上述導電體之導線端子係介隔上述間隔件而支撐於上述金屬板。
根據上述構成，使用導電體連接半導體晶片之電極與導線端子時，即使導線端子之強度不足之情形下，亦可藉由間隔件及金屬板而支撐導線端子，故可於保持導線端子之高度之狀態下進行連接。
又，本發明之半導體裝置中，亦可構成為進而具備至少密封上述半導體元件之密封樹脂，且連接於上述導電體之導線端子之包含與該導電體之接合部分之一部分配置於上述密封樹脂內，而該一部分以外之部分配置於上述密封樹脂外。
又，本發明之半導體裝置中，亦可構成為於上述半導體元件中形成有具有汲極電極、源極電極及閘極電極之功率電晶體，且作為上述導線端子，具有電性連接於上述汲極電極之第1導線端子、電性連接於上述源極電極之第2導線端子、及電性連接於上述閘極電極之第3導線端子。
本發明之半導體裝置之特徵在於：包含金屬板、設置於上述金屬板之複數個半導體元件、及電性連接於上述複數個半導體元件之至少3個導線端子；且上述複數個半導體元件之各者係於該半導體元件之第1面具有至少1個電極，且以位於上述第1面之相反側之第2面與上述金屬板對向之方式設置於上述金屬板；上述導線端子係以不與上述複數個半導體元件重合之方式配置；位於上述複數個半導體元件之各第1面之所有電極中至少1個電極係與上述導線端子中相互不同之任一導線端子藉由導電體而分別連接；連接於上述導電體之導線端子與該導電體之接合部分係以與介隔該導電體而連接之電極接近之方式配置。
根據上述構成，因連接於導電體之導線端子與該導電體之接合部分係以與介隔該導電體而連接之電極接近之方式配置，故可縮短連接導線端子及電極之導電體，而可減少導電體之電阻及電感。
又，因上述導電體無需如先前般繞成圓弧狀而設置，故 可使用具有更大截面積之形狀者。因此，亦可進而謀求導電體之電阻及電感之減少。
進而，使用導電體之連接係與先前之連接步驟(例如，打線步驟)大致相同之步驟，不會導致步驟之增加。又，可適用於具備通常之電極之半導體元件。
因此，即使因具備複數個半導體元件而連接部分變多之構成中，亦可使用通用且簡易之連接構成，減少作為半導體裝置之封裝體整體之電阻及電感。
又，本發明之半導體裝置中，藉由上述導電體而連接之電極及導線端子較佳為，該電極與該導電體之接合部分與該導線端子與該導電體之接合部分位於相同高度。
根據上述構成，可將導電體設為直線狀。因此，導電體之長度可為最小，而可將導電體之電阻及電感抑制為最小限度。
又，本發明之半導體裝置中，亦可構成為上述導電體具有直線狀之形狀。
又，本發明之半導體裝置中，亦可構成為藉由上述導電體連接之電極及導線端子之兩者之配置距離係考慮具有該電極之半導體元件之搭載偏移而規定之最小距離。
又，本發明之半導體裝置中，亦可構成為上述複數個半導體元件中之至少1個半導體元件於上述第2面進而具有至少1個電極。
又，本發明之半導體裝置中，亦可構成為連接於上述導電體之導線端子係作為可與外部連接之端子發揮功能。
又，本發明之半導體裝置中，較佳為進而具備絕緣性之間隔件，且連接於上述導電體之導線端子係介隔上述間隔件而由上述金屬板支撐。
根據上述構成，使用導電體連接半導體晶片之電極及導線端子時，即使導線端子之強度不足之情形下，亦可藉由間隔件及金屬板而支撐導線端子，故可於保持導線端子之高度之狀態下進行連接。
又，本發明之半導體裝置中，亦可構成為進而具備至少密封上述複數個半導體元件之密封樹脂，且連接於上述導電體之導線端子之包含與該導電體之接合部分之一部分配置於上述密封樹脂內，而該一部分以外之部分配置於上述密封樹脂外。
又，本發明之半導體裝置中，亦可構成為具備第1半導體元件及第2半導體元件作為上述複數個半導體元件，具備第1導線端子、第2導線端子及第3導線端子作為上述導線端子，上述第1半導體元件及第2半導體元件中分別形成具有汲極電極、源極電極及閘極電極之N通道型功率電晶體，上述第1半導體元件之汲極電極電性連接於上述第1導線端子，上述第1半導體元件之源極電極電性連接於上述第2半導體元件之汲極電極，上述第1半導體元件之閘極電極電性連接於上述第2半導體元件之源極電極，上述第2半導體元件之源極電極電性連接於上述第2導線端子，上述第2半導體元件之閘極電極電性連接於上述第3導線端子。
[產業上之可利用性]
本發明之半導體裝置可適用於實裝有功率電晶體之器件。
1‧‧‧半導體裝置
1a‧‧‧半導體裝置
1b‧‧‧半導體裝置
1c‧‧‧半導體裝置
1d‧‧‧半導體裝置
2‧‧‧頭座(金屬板)
3‧‧‧半導體晶片
3a‧‧‧半導體晶片
3b‧‧‧半導體晶片
4‧‧‧閘極電極(電極)
4a‧‧‧閘極電極(電極)
4b‧‧‧閘極電極(電極)
5‧‧‧源極電極(電極)
5a‧‧‧源極電極(電極)
5b‧‧‧源極電極(電極)
7‧‧‧閘極端子(導線端子、第3導線端子)
8‧‧‧汲極端子(導線端子、第1導線端子)
9‧‧‧源極端子(導線端子、第2導線端子)
10‧‧‧模製樹脂(密封樹脂)
11a‧‧‧導電體
11b‧‧‧導電體
11c‧‧‧導電體
11d‧‧‧導電體
11e‧‧‧導電體
11f‧‧‧導電體
11g‧‧‧導電體
12‧‧‧間隔件
20‧‧‧半導體裝置
21‧‧‧半導體晶片(半導體元件、第1半導體元件)
22‧‧‧閘極電極(電極)
23‧‧‧源極電極(電極)
24‧‧‧汲極電極(電極)
25‧‧‧半導體晶片(半導體元件、第2半導體元件)
26‧‧‧閘極電極(電極)
27‧‧‧汲極電極(電極)
31‧‧‧閘極端子(導線端子、第3導線端子)
32‧‧‧汲極端子(導線端子、第1導線端子)
33‧‧‧源極端子(導線端子、第2導線端子)
圖1係表示本發明之一實施形態之半導體裝置之概略構成之圖，圖1(a)表示俯視，圖1(b)表示圖1(a)中所示之A-A'線剖面視，圖1(c)表示圖1(a)中所示之B-B'線剖面視。
圖2(a)~圖2(d)係表示上述半導體裝置之其他構成例之圖。
圖3係表示本發明之其他實施形態之半導體裝置之概略構成之圖。
1‧‧‧半導體裝置
2‧‧‧頭座
3‧‧‧半導體晶片
4‧‧‧閘極電極
5‧‧‧源極電極
7‧‧‧閘極端子
8‧‧‧汲極端子
9‧‧‧源極端子
10‧‧‧模製樹脂
11a‧‧‧導電體
11b‧‧‧導電體
12‧‧‧間隔件

Claims (18)

  1. 一種半導體裝置，其特徵在於：包含金屬板、設置於上述金屬板之1個半導體元件、及電性連接於上述半導體元件之至少3個導線端子；且上述半導體元件係於該半導體元件之第1面包含至少1個電極，且以位於上述第1面之相反側之第2面與上述金屬板對向之方式設置於上述金屬板；上述導線端子係以不與上述半導體元件重合之方式配置；位於上述半導體元件之第1面之各電極係與上述導線端子中相互不同之任一導線端子藉由導電體而分別連接；連接於上述導電體之導線端子與該導電體之接合部分係以與介隔該導電體而連接之電極接近之方式配置。
  2. 如請求項1之半導體裝置，其中藉由上述導電體連接之電極及導線端子係該電極與該導電體之接合部分及該導線端子與該導電體之接合部分位於相同高度。
  3. 如請求項1或2之半導體裝置，其中上述導電體具有直線狀之形狀。
  4. 如請求項1或2之半導體裝置，其中藉由上述導電體連接之電極及導線端子之兩者之配置距離係考慮上述半導體元件之搭載偏移而決定之最小距離。
  5. 如請求項1或2之半導體裝置，其中上述半導體元件於上述第2面進而包含至少1個電極。
  6. 如請求項1或2之半導體裝置，其中連接於上述導電體之導線端子係作為可與外部連接之端子而發揮功能。
  7. 如請求項1或2之半導體裝置，其中進而包含絕緣性之間隔件，連接於上述導電體之導線端子係介隔上述間隔件而由上述金屬板支撐。
  8. 如請求項1或2之半導體裝置，其中進而包含至少密封上述半導體元件之密封樹脂，連接於上述導電體之導線端子係包含與該導電體之接合部分之一部分配置於上述密封樹脂內，該一部分以外之部分配置於上述密封樹脂外。
  9. 如請求項1或2之半導體裝置，其中於上述半導體元件中形成包含汲極電極、源極電極及閘極電極之功率電晶體，作為上述導線端子，包含有電性連接於上述汲極電極之第1導線端子、電性連接於上述源極電極之第2導線端子、及電性連接於上述閘極電極之第3導線端子。
  10. 一種半導體裝置，其特徵在於：包含金屬板、設置於上述金屬板之複數個半導體元件、及電性連接於上述複數個半導體元件之至少3個導線端子；且上述複數個半導體元件之各者係於該半導體元件之第1面包含至少1個電極，且以位於上述第1面之相反側之第2面與上述金屬板對向之方式設置於上述金屬板； 上述導線端子係以不與上述複數個半導體元件重合之方式配置；位於上述複數個半導體元件之各第1面之所有電極中至少1個電極係與上述導線端子中相互不同之任一導線端子藉由導電體而分別連接；連接於上述導電體之導線端子與該導電體之接合部分係以與介隔該導電體而連接之電極接近之方式配置。
  11. 如請求項10之半導體裝置，其中藉由上述導電體連接之電極及導線端子係該電極與該導電體之接合部分及該導線端子與該導電體之接合部分位於相同高度。
  12. 如請求項10或11之半導體裝置，其中上述導電體具有直線狀之形狀。
  13. 如請求項10或11之半導體裝置，其中藉由上述導電體連接之電極及導線端子之兩者之配置距離係考慮包含該電極之半導體元件之搭載偏移而決定之最小距離。
  14. 如請求項10或11之半導體裝置，其中上述複數個半導體元件中至少1個半導體元件於上述第2面進而包含至少1個電極。
  15. 如請求項10或11之半導體裝置，其中連接於上述導電體之導線端子係作為可與外部連接之端子而發揮功能。
  16. 如請求項10或11之半導體裝置，其中進而包含絕緣性之間隔件，連接於上述導電體之導線端子係介隔上述間隔件而由上述金屬板支撐。
  17. 如請求項10或11之半導體裝置，其中進而包含至少密封上述複數個半導體元件之密封樹脂，連接於上述導電體之導線端子係包含與該導電體之接合部分之一部分配置於上述密封樹脂內，該一部分以外之部分配置於上述密封樹脂外。
  18. 如請求項10或11之半導體裝置，其中作為上述複數個半導體元件，包含第1半導體元件及第2半導體元件，作為上述導線端子，包含第1導線端子、第2導線端子及第3導線端子，於上述第1半導體元件及上述第2半導體元件中分別形成包含汲極電極、源極電極及閘極電極之N通道型功率電晶體，上述第1半導體元件之汲極電極電性連接於上述第1導線端子，上述第1半導體元件之源極電極電性連接於上述第2半導體元件之汲極電極，上述第1半導體元件之閘極電極電性連接於上述第2半導體元件之源極電極，上述第2半導體元件之源極電極電性連接於上述第2導線端子，上述第2半導體元件之閘極電極電性連接於上述第3導線端子。
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