TW201204818A - Polishing agent for semiconductor substrate and fabricating method of semiconductor wafer - Google Patents

Polishing agent for semiconductor substrate and fabricating method of semiconductor wafer Download PDF

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Publication number
TW201204818A
TW201204818A TW100120948A TW100120948A TW201204818A TW 201204818 A TW201204818 A TW 201204818A TW 100120948 A TW100120948 A TW 100120948A TW 100120948 A TW100120948 A TW 100120948A TW 201204818 A TW201204818 A TW 201204818A
Authority
TW
Taiwan
Prior art keywords
semiconductor substrate
polishing
mass
polishing liquid
semiconductor
Prior art date
Application number
TW100120948A
Other languages
English (en)
Chinese (zh)
Inventor
Yutaka Nomura
Hiroshi Nakagawa
Masahiro Sakashita
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of TW201204818A publication Critical patent/TW201204818A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW100120948A 2010-06-18 2011-06-15 Polishing agent for semiconductor substrate and fabricating method of semiconductor wafer TW201204818A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010139460 2010-06-18

Publications (1)

Publication Number Publication Date
TW201204818A true TW201204818A (en) 2012-02-01

Family

ID=45348120

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100120948A TW201204818A (en) 2010-06-18 2011-06-15 Polishing agent for semiconductor substrate and fabricating method of semiconductor wafer

Country Status (4)

Country Link
JP (1) JPWO2011158718A1 (ko)
KR (1) KR20130041084A (ko)
TW (1) TW201204818A (ko)
WO (1) WO2011158718A1 (ko)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104541361A (zh) * 2012-05-07 2015-04-22 巴斯夫欧洲公司 制造半导体装置的方法
CN105189676A (zh) * 2013-05-15 2015-12-23 巴斯夫欧洲公司 包含一种或多种选自n-乙烯基均聚物和n-乙烯基共聚物的聚合物的化学机械抛光组合物
TWI633178B (zh) * 2014-09-05 2018-08-21 卡博特微電子公司 漿液組合物、清洗組合物、基板拋光方法及清洗方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI558800B (zh) * 2012-03-14 2016-11-21 福吉米股份有限公司 硏磨用組成物及半導體基板之製造方法
EP2662885A1 (en) * 2012-05-07 2013-11-13 Basf Se A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing (cmp) of iii-v material in the presence of a cmp composition comprising a compound containing an n-heterocycle
JP6029916B2 (ja) * 2012-09-28 2016-11-24 株式会社フジミインコーポレーテッド 研磨用組成物
EP2997105A4 (en) * 2013-05-15 2017-01-25 Basf Se Chemical-mechanical polishing compositions comprising polyethylene imine
JP7458732B2 (ja) * 2019-09-30 2024-04-01 株式会社フジミインコーポレーテッド 研磨用組成物および磁気ディスク基板製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06232141A (ja) * 1992-12-07 1994-08-19 Sony Corp 半導体基板の作成方法及び固体撮像装置の製造方法
JP2007131536A (ja) * 2004-07-27 2007-05-31 Vitamin C60 Bioresearch Kk 皮膚メラニン抑制剤
JP2010067914A (ja) * 2008-09-12 2010-03-25 Fujifilm Corp 化学的機械的研磨液、及び化学的機械的研磨方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104541361A (zh) * 2012-05-07 2015-04-22 巴斯夫欧洲公司 制造半导体装置的方法
CN105189676A (zh) * 2013-05-15 2015-12-23 巴斯夫欧洲公司 包含一种或多种选自n-乙烯基均聚物和n-乙烯基共聚物的聚合物的化学机械抛光组合物
CN105189676B (zh) * 2013-05-15 2021-03-23 巴斯夫欧洲公司 包含一种或多种选自n-乙烯基均聚物和n-乙烯基共聚物的聚合物的化学机械抛光组合物
TWI633178B (zh) * 2014-09-05 2018-08-21 卡博特微電子公司 漿液組合物、清洗組合物、基板拋光方法及清洗方法

Also Published As

Publication number Publication date
KR20130041084A (ko) 2013-04-24
WO2011158718A1 (ja) 2011-12-22
JPWO2011158718A1 (ja) 2013-08-19

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