JPWO2011158718A1 - 半導体基板用研磨液及び半導体ウエハの製造方法 - Google Patents
半導体基板用研磨液及び半導体ウエハの製造方法Info
- Publication number
- JPWO2011158718A1 JPWO2011158718A1 JP2012520390A JP2012520390A JPWO2011158718A1 JP WO2011158718 A1 JPWO2011158718 A1 JP WO2011158718A1 JP 2012520390 A JP2012520390 A JP 2012520390A JP 2012520390 A JP2012520390 A JP 2012520390A JP WO2011158718 A1 JPWO2011158718 A1 JP WO2011158718A1
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- semiconductor substrate
- polishing liquid
- semiconductor
- mass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010139460 | 2010-06-18 | ||
| JP2010139460 | 2010-06-18 | ||
| PCT/JP2011/063171 WO2011158718A1 (ja) | 2010-06-18 | 2011-06-08 | 半導体基板用研磨液及び半導体ウエハの製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2011158718A1 true JPWO2011158718A1 (ja) | 2013-08-19 |
Family
ID=45348120
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012520390A Pending JPWO2011158718A1 (ja) | 2010-06-18 | 2011-06-08 | 半導体基板用研磨液及び半導体ウエハの製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPWO2011158718A1 (ko) |
| KR (1) | KR20130041084A (ko) |
| TW (1) | TW201204818A (ko) |
| WO (1) | WO2011158718A1 (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014069260A (ja) * | 2012-09-28 | 2014-04-21 | Fujimi Inc | 研磨用組成物 |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI558800B (zh) * | 2012-03-14 | 2016-11-21 | 福吉米股份有限公司 | 硏磨用組成物及半導體基板之製造方法 |
| EP2662885A1 (en) * | 2012-05-07 | 2013-11-13 | Basf Se | A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing (cmp) of iii-v material in the presence of a cmp composition comprising a compound containing an n-heterocycle |
| KR20150008442A (ko) * | 2012-05-07 | 2015-01-22 | 바스프 에스이 | 반도체 소자의 제조 방법 |
| CN105189676B (zh) * | 2013-05-15 | 2021-03-23 | 巴斯夫欧洲公司 | 包含一种或多种选自n-乙烯基均聚物和n-乙烯基共聚物的聚合物的化学机械抛光组合物 |
| EP2997105A4 (en) * | 2013-05-15 | 2017-01-25 | Basf Se | Chemical-mechanical polishing compositions comprising polyethylene imine |
| JP6559936B2 (ja) * | 2014-09-05 | 2019-08-14 | 日本キャボット・マイクロエレクトロニクス株式会社 | スラリー組成物、リンス組成物、基板研磨方法およびリンス方法 |
| JP7458732B2 (ja) * | 2019-09-30 | 2024-04-01 | 株式会社フジミインコーポレーテッド | 研磨用組成物および磁気ディスク基板製造方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06232141A (ja) * | 1992-12-07 | 1994-08-19 | Sony Corp | 半導体基板の作成方法及び固体撮像装置の製造方法 |
| JP2007131536A (ja) * | 2004-07-27 | 2007-05-31 | Vitamin C60 Bioresearch Kk | 皮膚メラニン抑制剤 |
| JP2010067914A (ja) * | 2008-09-12 | 2010-03-25 | Fujifilm Corp | 化学的機械的研磨液、及び化学的機械的研磨方法 |
-
2011
- 2011-06-08 KR KR1020137000572A patent/KR20130041084A/ko not_active Application Discontinuation
- 2011-06-08 JP JP2012520390A patent/JPWO2011158718A1/ja active Pending
- 2011-06-08 WO PCT/JP2011/063171 patent/WO2011158718A1/ja active Application Filing
- 2011-06-15 TW TW100120948A patent/TW201204818A/zh unknown
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06232141A (ja) * | 1992-12-07 | 1994-08-19 | Sony Corp | 半導体基板の作成方法及び固体撮像装置の製造方法 |
| JP2007131536A (ja) * | 2004-07-27 | 2007-05-31 | Vitamin C60 Bioresearch Kk | 皮膚メラニン抑制剤 |
| JP2010067914A (ja) * | 2008-09-12 | 2010-03-25 | Fujifilm Corp | 化学的機械的研磨液、及び化学的機械的研磨方法 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014069260A (ja) * | 2012-09-28 | 2014-04-21 | Fujimi Inc | 研磨用組成物 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20130041084A (ko) | 2013-04-24 |
| WO2011158718A1 (ja) | 2011-12-22 |
| TW201204818A (en) | 2012-02-01 |
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