TW201135868A - Method of forming a semiconductor die - Google Patents

Method of forming a semiconductor die Download PDF

Info

Publication number
TW201135868A
TW201135868A TW099147016A TW99147016A TW201135868A TW 201135868 A TW201135868 A TW 201135868A TW 099147016 A TW099147016 A TW 099147016A TW 99147016 A TW99147016 A TW 99147016A TW 201135868 A TW201135868 A TW 201135868A
Authority
TW
Taiwan
Prior art keywords
die
grains
wafer
semiconductor
dies
Prior art date
Application number
TW099147016A
Other languages
English (en)
Chinese (zh)
Inventor
Gordon M Grivna
Michael J Seddon
Original Assignee
Semiconductor Components Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Components Ind filed Critical Semiconductor Components Ind
Publication of TW201135868A publication Critical patent/TW201135868A/zh

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117Shapes of semiconductor bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00Cutting or separating of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/20Configurations of stacked chips
    • H10W90/28Configurations of stacked chips the stacked chips having different sizes, e.g. chip stacks having a pyramidal shape
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/811Multiple chips on leadframes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/137Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Dicing (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
TW099147016A 2010-01-18 2010-12-30 Method of forming a semiconductor die TW201135868A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/689,126 US8384231B2 (en) 2010-01-18 2010-01-18 Method of forming a semiconductor die

Publications (1)

Publication Number Publication Date
TW201135868A true TW201135868A (en) 2011-10-16

Family

ID=44268046

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099147016A TW201135868A (en) 2010-01-18 2010-12-30 Method of forming a semiconductor die

Country Status (5)

Country Link
US (1) US8384231B2 (enExample)
JP (1) JP2011146718A (enExample)
KR (1) KR20110084836A (enExample)
CN (1) CN102130022A (enExample)
TW (1) TW201135868A (enExample)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8871613B2 (en) 2012-06-18 2014-10-28 Semiconductor Components Industries, Llc Semiconductor die singulation method
US8664089B1 (en) 2012-08-20 2014-03-04 Semiconductor Components Industries, Llc Semiconductor die singulation method
US9034733B2 (en) 2012-08-20 2015-05-19 Semiconductor Components Industries, Llc Semiconductor die singulation method
US9484260B2 (en) 2012-11-07 2016-11-01 Semiconductor Components Industries, Llc Heated carrier substrate semiconductor die singulation method
US9136173B2 (en) 2012-11-07 2015-09-15 Semiconductor Components Industries, Llc Singulation method for semiconductor die having a layer of material along one major surface
US9034734B2 (en) 2013-02-04 2015-05-19 Avago Technologies General Ip (Singapore) Pte. Ltd. Systems and methods for plasma etching compound semiconductor (CS) dies and passively aligning the dies
US9406564B2 (en) * 2013-11-21 2016-08-02 Infineon Technologies Ag Singulation through a masking structure surrounding expitaxial regions
US20150255349A1 (en) * 2014-03-07 2015-09-10 JAMES Matthew HOLDEN Approaches for cleaning a wafer during hybrid laser scribing and plasma etching wafer dicing processes
US9418894B2 (en) 2014-03-21 2016-08-16 Semiconductor Components Industries, Llc Electronic die singulation method
US9472458B2 (en) 2014-06-04 2016-10-18 Semiconductor Components Industries, Llc Method of reducing residual contamination in singulated semiconductor die
US10163709B2 (en) 2015-02-13 2018-12-25 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US9337098B1 (en) 2015-08-14 2016-05-10 Semiconductor Components Industries, Llc Semiconductor die back layer separation method
US11342189B2 (en) 2015-09-17 2022-05-24 Semiconductor Components Industries, Llc Semiconductor packages with die including cavities and related methods
US11430746B2 (en) 2020-04-29 2022-08-30 Semiconductor Components Industries, Llc Multidie supports for reducing die warpage
US10529576B2 (en) * 2017-08-17 2020-01-07 Semiconductor Components Industries, Llc Multi-faced molded semiconductor package and related methods
US10319639B2 (en) 2017-08-17 2019-06-11 Semiconductor Components Industries, Llc Thin semiconductor package and related methods
US9991338B2 (en) 2015-09-17 2018-06-05 Semiconductor Components Industries, Llc Electronic device including a conductive structure surrounded by an insulating structure
US10366923B2 (en) 2016-06-02 2019-07-30 Semiconductor Components Industries, Llc Method of separating electronic devices having a back layer and apparatus
US10497602B2 (en) 2016-08-01 2019-12-03 Semiconductor Components Industries, Llc Process of forming an electronic device including forming an electronic component and removing a portion of a substrate
US10056428B2 (en) * 2016-09-07 2018-08-21 Semiconductor Components Industries, Llc Semiconductor device and method of forming curved image sensor region robust against buckling
US10373869B2 (en) * 2017-05-24 2019-08-06 Semiconductor Components Industries, Llc Method of separating a back layer on a substrate using exposure to reduced temperature and related apparatus
US10497689B2 (en) * 2017-08-04 2019-12-03 Mediatek Inc. Semiconductor package assembly and method for forming the same
US11367619B2 (en) 2017-08-17 2022-06-21 Semiconductor Components Industries, Llc Semiconductor package electrical contacts and related methods
US11404276B2 (en) 2017-08-17 2022-08-02 Semiconductor Components Industries, Llc Semiconductor packages with thin die and related methods
US11404277B2 (en) 2017-08-17 2022-08-02 Semiconductor Components Industries, Llc Die sidewall coatings and related methods
US11393692B2 (en) 2017-08-17 2022-07-19 Semiconductor Components Industries, Llc Semiconductor package electrical contact structures and related methods
US11348796B2 (en) 2017-08-17 2022-05-31 Semiconductor Components Industries, Llc Backmetal removal methods
US10741487B2 (en) 2018-04-24 2020-08-11 Semiconductor Components Industries, Llc SOI substrate and related methods
US11361970B2 (en) 2017-08-17 2022-06-14 Semiconductor Components Industries, Llc Silicon-on-insulator die support structures and related methods
US12230502B2 (en) 2017-08-17 2025-02-18 Semiconductor Components Industries, Llc Semiconductor package stress balance structures and related methods
US10880991B2 (en) * 2018-04-04 2020-12-29 Marvell Asia Pte, Ltd. Apparatus and methods for enhancing signaling bandwidth in an integrated circuit package
CN110634796A (zh) 2018-06-25 2019-12-31 半导体元件工业有限责任公司 用于处理电子管芯的方法及半导体晶圆和管芯的切单方法
US10916474B2 (en) 2018-06-25 2021-02-09 Semiconductor Components Industries, Llc Method of reducing residual contamination in singulated semiconductor die
US11791212B2 (en) * 2019-12-13 2023-10-17 Micron Technology, Inc. Thin die release for semiconductor device assembly
KR102872928B1 (ko) * 2019-12-30 2025-10-16 삼성전자주식회사 반도체 웨이퍼 및 그 제조 방법

Family Cites Families (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2985484B2 (ja) * 1992-03-19 1999-11-29 株式会社日立製作所 半導体装置とその製造方法
US4820377A (en) * 1987-07-16 1989-04-11 Texas Instruments Incorporated Method for cleanup processing chamber and vacuum process module
US5075253A (en) * 1989-04-12 1991-12-24 Advanced Micro Devices, Inc. Method of coplanar integration of semiconductor IC devices
JPH05267449A (ja) * 1992-03-19 1993-10-15 Mitsubishi Electric Corp 半導体装置及びその製造方法
US5300461A (en) * 1993-01-25 1994-04-05 Intel Corporation Process for fabricating sealed semiconductor chip using silicon nitride passivation film
US6030885A (en) * 1997-04-18 2000-02-29 Vlsi Technology, Inc. Hexagonal semiconductor die, semiconductor substrates, and methods of forming a semiconductor die
US5982018A (en) * 1997-05-23 1999-11-09 Micron Technology, Inc. Thin film capacitor coupons for memory modules and multi-chip modules
JPH11168172A (ja) * 1997-12-04 1999-06-22 Toshiba Tec Corp 半導体チップの製造方法及びその半導体チップによる3次元構造体、その製造方法及びその電気的接続方法
US6214703B1 (en) * 1999-04-15 2001-04-10 Taiwan Semiconductor Manufacturing Company Method to increase wafer utility by implementing deep trench in scribe line
WO2001056063A2 (en) 2000-01-26 2001-08-02 Tru-Si Technologies, Inc. Thinning and dicing of semiconductor wafers using dry etch, and obtaining semiconductor chips with rounded bottom edges and corners
JP3778773B2 (ja) * 2000-05-09 2006-05-24 三洋電機株式会社 板状体および半導体装置の製造方法
US6686225B2 (en) * 2001-07-27 2004-02-03 Texas Instruments Incorporated Method of separating semiconductor dies from a wafer
US6642127B2 (en) 2001-10-19 2003-11-04 Applied Materials, Inc. Method for dicing a semiconductor wafer
US7332819B2 (en) * 2002-01-09 2008-02-19 Micron Technology, Inc. Stacked die in die BGA package
GB0130870D0 (en) * 2001-12-21 2002-02-06 Accentus Plc Solid-state antenna
US6849554B2 (en) * 2002-05-01 2005-02-01 Applied Materials, Inc. Method of etching a deep trench having a tapered profile in silicon
JP3923368B2 (ja) * 2002-05-22 2007-05-30 シャープ株式会社 半導体素子の製造方法
US6897128B2 (en) 2002-11-20 2005-05-24 Matsushita Electric Industrial Co., Ltd. Method of manufacturing semiconductor device, plasma processing apparatus and plasma processing method
US20040102022A1 (en) * 2002-11-22 2004-05-27 Tongbi Jiang Methods of fabricating integrated circuitry
JP4013753B2 (ja) 2002-12-11 2007-11-28 松下電器産業株式会社 半導体ウェハの切断方法
JP3991872B2 (ja) 2003-01-23 2007-10-17 松下電器産業株式会社 半導体装置の製造方法
US20060278956A1 (en) * 2003-03-13 2006-12-14 Pdf Solutions, Inc. Semiconductor wafer with non-rectangular shaped dice
KR20040086869A (ko) * 2003-03-22 2004-10-13 삼성전자주식회사 다양한 형태의 반도체 칩을 제조하기 위한 웨이퍼 절단 방법
US7098077B2 (en) * 2004-01-20 2006-08-29 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor chip singulation method
US7129114B2 (en) * 2004-03-10 2006-10-31 Micron Technology, Inc. Methods relating to singulating semiconductor wafers and wafer scale assemblies
KR100627006B1 (ko) * 2004-04-01 2006-09-25 삼성전자주식회사 인덴트 칩과, 그를 이용한 반도체 패키지와 멀티 칩 패키지
JP2006041005A (ja) 2004-07-23 2006-02-09 Matsushita Electric Ind Co Ltd 半導体素子形成領域の配置決定方法及び装置、半導体素子形成領域の配置決定用プログラム、並びに半導体素子の製造方法
JP2006049403A (ja) * 2004-08-02 2006-02-16 Matsushita Electric Ind Co Ltd 半導体素子形成領域の配置決定方法、半導体素子形成領域の配置決定用プログラム、及び半導体素子の製造方法
JP4018088B2 (ja) 2004-08-02 2007-12-05 松下電器産業株式会社 半導体ウェハの分割方法及び半導体素子の製造方法
US7288489B2 (en) * 2004-08-20 2007-10-30 Semitool, Inc. Process for thinning a semiconductor workpiece
US7335576B2 (en) * 2004-10-08 2008-02-26 Irvine Sensors Corp. Method for precision integrated circuit die singulation using differential etch rates
JP4288229B2 (ja) 2004-12-24 2009-07-01 パナソニック株式会社 半導体チップの製造方法
US7253477B2 (en) * 2005-02-15 2007-08-07 Semiconductor Components Industries, L.L.C. Semiconductor device edge termination structure
JP4275095B2 (ja) 2005-04-14 2009-06-10 パナソニック株式会社 半導体チップの製造方法
SG126885A1 (en) * 2005-04-27 2006-11-29 Disco Corp Semiconductor wafer and processing method for same
JP4285455B2 (ja) 2005-07-11 2009-06-24 パナソニック株式会社 半導体チップの製造方法
US8153464B2 (en) * 2005-10-18 2012-04-10 International Rectifier Corporation Wafer singulation process
US20070132034A1 (en) * 2005-12-14 2007-06-14 Giuseppe Curello Isolation body for semiconductor devices and method to form the same
JP2007227883A (ja) * 2006-01-27 2007-09-06 Matsushita Electric Ind Co Ltd ベース半導体チップ、半導体集積回路装置及びその製造方法
JP2007294612A (ja) * 2006-04-24 2007-11-08 Oki Data Corp 半導体装置、半導体装置の製造方法、半導体製造装置、ledヘッド、および画像形成装置
JP5023614B2 (ja) 2006-08-24 2012-09-12 パナソニック株式会社 半導体チップの製造方法及び半導体ウエハの処理方法
JP4544231B2 (ja) 2006-10-06 2010-09-15 パナソニック株式会社 半導体チップの製造方法
JP2008159985A (ja) 2006-12-26 2008-07-10 Matsushita Electric Ind Co Ltd 半導体チップの製造方法
JP4840174B2 (ja) 2007-02-08 2011-12-21 パナソニック株式会社 半導体チップの製造方法
JP2008217384A (ja) * 2007-03-05 2008-09-18 Hitachi Ltd 回路チップ及びその製造方法、並びにこれを搭載したrfid回路装置
US7705440B2 (en) * 2007-09-07 2010-04-27 Freescale Semiconductor, Inc. Substrate having through-wafer vias and method of forming
TW200935506A (en) 2007-11-16 2009-08-16 Panasonic Corp Plasma dicing apparatus and semiconductor chip manufacturing method
JP2009164263A (ja) * 2007-12-28 2009-07-23 Nec Electronics Corp 配線モジュール及び半導体集積回路装置

Also Published As

Publication number Publication date
CN102130022A (zh) 2011-07-20
US8384231B2 (en) 2013-02-26
KR20110084836A (ko) 2011-07-26
JP2011146718A (ja) 2011-07-28
US20110175242A1 (en) 2011-07-21

Similar Documents

Publication Publication Date Title
TW201135868A (en) Method of forming a semiconductor die
TWI538038B (zh) 形成一半導體晶粒之方法
EP3370253B1 (en) Semiconductor wafer dicing crack prevention using chip peripheral trenches
CN106549009B (zh) 层叠式半导体器件结构及其制作方法
US20220181211A1 (en) Composite Wafer, Semiconductor Device and Electronic Component
CN102157397B (zh) 形成电磁保护半导体管芯的方法及半导体管芯
TW201140787A (en) Method of forming an EM protected semiconductor die
US6790694B2 (en) High frequency semiconductor module, high frequency semiconductor device and manufacturing method for the same
US20250357214A1 (en) Chip separation supported by back side trench and adhesive therein
CN112309972B (zh) 电子器件及其形成方法
HK1159312A (en) Method of forming a semiconductor die
HK1158824A (en) Method of forming a semiconductor die
US20250366084A1 (en) Diode trench isolation for improved breakdown voltage uniformity
CN114530427A (zh) 半导体封装结构及其制备方法、电子设备
TW202524590A (zh) 具有側壁凹部之半導體裝置
CN116230560A (zh) 使用具有中心盘的引线框形成引线半导体封装的方法
CN118315359A (zh) 在载体背侧上具有真空抽吸增强凹口的封装体
CN112310052A (zh) 多芯片封装
HK1159313B (en) Method of forming an em protected semiconductor die and semiconductor die