TW201135868A - Method of forming a semiconductor die - Google Patents
Method of forming a semiconductor die Download PDFInfo
- Publication number
- TW201135868A TW201135868A TW099147016A TW99147016A TW201135868A TW 201135868 A TW201135868 A TW 201135868A TW 099147016 A TW099147016 A TW 099147016A TW 99147016 A TW99147016 A TW 99147016A TW 201135868 A TW201135868 A TW 201135868A
- Authority
- TW
- Taiwan
- Prior art keywords
- die
- grains
- wafer
- semiconductor
- dies
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/117—Shapes of semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P54/00—Cutting or separating of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/20—Configurations of stacked chips
- H10W90/28—Configurations of stacked chips the stacked chips having different sizes, e.g. chip stacks having a pyramidal shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/811—Multiple chips on leadframes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
- H10W74/137—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
Landscapes
- Dicing (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/689,126 US8384231B2 (en) | 2010-01-18 | 2010-01-18 | Method of forming a semiconductor die |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201135868A true TW201135868A (en) | 2011-10-16 |
Family
ID=44268046
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099147016A TW201135868A (en) | 2010-01-18 | 2010-12-30 | Method of forming a semiconductor die |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8384231B2 (enExample) |
| JP (1) | JP2011146718A (enExample) |
| KR (1) | KR20110084836A (enExample) |
| CN (1) | CN102130022A (enExample) |
| TW (1) | TW201135868A (enExample) |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8871613B2 (en) | 2012-06-18 | 2014-10-28 | Semiconductor Components Industries, Llc | Semiconductor die singulation method |
| US8664089B1 (en) | 2012-08-20 | 2014-03-04 | Semiconductor Components Industries, Llc | Semiconductor die singulation method |
| US9034733B2 (en) | 2012-08-20 | 2015-05-19 | Semiconductor Components Industries, Llc | Semiconductor die singulation method |
| US9484260B2 (en) | 2012-11-07 | 2016-11-01 | Semiconductor Components Industries, Llc | Heated carrier substrate semiconductor die singulation method |
| US9136173B2 (en) | 2012-11-07 | 2015-09-15 | Semiconductor Components Industries, Llc | Singulation method for semiconductor die having a layer of material along one major surface |
| US9034734B2 (en) | 2013-02-04 | 2015-05-19 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Systems and methods for plasma etching compound semiconductor (CS) dies and passively aligning the dies |
| US9406564B2 (en) * | 2013-11-21 | 2016-08-02 | Infineon Technologies Ag | Singulation through a masking structure surrounding expitaxial regions |
| US20150255349A1 (en) * | 2014-03-07 | 2015-09-10 | JAMES Matthew HOLDEN | Approaches for cleaning a wafer during hybrid laser scribing and plasma etching wafer dicing processes |
| US9418894B2 (en) | 2014-03-21 | 2016-08-16 | Semiconductor Components Industries, Llc | Electronic die singulation method |
| US9472458B2 (en) | 2014-06-04 | 2016-10-18 | Semiconductor Components Industries, Llc | Method of reducing residual contamination in singulated semiconductor die |
| US10163709B2 (en) | 2015-02-13 | 2018-12-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method |
| US9337098B1 (en) | 2015-08-14 | 2016-05-10 | Semiconductor Components Industries, Llc | Semiconductor die back layer separation method |
| US11342189B2 (en) | 2015-09-17 | 2022-05-24 | Semiconductor Components Industries, Llc | Semiconductor packages with die including cavities and related methods |
| US11430746B2 (en) | 2020-04-29 | 2022-08-30 | Semiconductor Components Industries, Llc | Multidie supports for reducing die warpage |
| US10529576B2 (en) * | 2017-08-17 | 2020-01-07 | Semiconductor Components Industries, Llc | Multi-faced molded semiconductor package and related methods |
| US10319639B2 (en) | 2017-08-17 | 2019-06-11 | Semiconductor Components Industries, Llc | Thin semiconductor package and related methods |
| US9991338B2 (en) | 2015-09-17 | 2018-06-05 | Semiconductor Components Industries, Llc | Electronic device including a conductive structure surrounded by an insulating structure |
| US10366923B2 (en) | 2016-06-02 | 2019-07-30 | Semiconductor Components Industries, Llc | Method of separating electronic devices having a back layer and apparatus |
| US10497602B2 (en) | 2016-08-01 | 2019-12-03 | Semiconductor Components Industries, Llc | Process of forming an electronic device including forming an electronic component and removing a portion of a substrate |
| US10056428B2 (en) * | 2016-09-07 | 2018-08-21 | Semiconductor Components Industries, Llc | Semiconductor device and method of forming curved image sensor region robust against buckling |
| US10373869B2 (en) * | 2017-05-24 | 2019-08-06 | Semiconductor Components Industries, Llc | Method of separating a back layer on a substrate using exposure to reduced temperature and related apparatus |
| US10497689B2 (en) * | 2017-08-04 | 2019-12-03 | Mediatek Inc. | Semiconductor package assembly and method for forming the same |
| US11367619B2 (en) | 2017-08-17 | 2022-06-21 | Semiconductor Components Industries, Llc | Semiconductor package electrical contacts and related methods |
| US11404276B2 (en) | 2017-08-17 | 2022-08-02 | Semiconductor Components Industries, Llc | Semiconductor packages with thin die and related methods |
| US11404277B2 (en) | 2017-08-17 | 2022-08-02 | Semiconductor Components Industries, Llc | Die sidewall coatings and related methods |
| US11393692B2 (en) | 2017-08-17 | 2022-07-19 | Semiconductor Components Industries, Llc | Semiconductor package electrical contact structures and related methods |
| US11348796B2 (en) | 2017-08-17 | 2022-05-31 | Semiconductor Components Industries, Llc | Backmetal removal methods |
| US10741487B2 (en) | 2018-04-24 | 2020-08-11 | Semiconductor Components Industries, Llc | SOI substrate and related methods |
| US11361970B2 (en) | 2017-08-17 | 2022-06-14 | Semiconductor Components Industries, Llc | Silicon-on-insulator die support structures and related methods |
| US12230502B2 (en) | 2017-08-17 | 2025-02-18 | Semiconductor Components Industries, Llc | Semiconductor package stress balance structures and related methods |
| US10880991B2 (en) * | 2018-04-04 | 2020-12-29 | Marvell Asia Pte, Ltd. | Apparatus and methods for enhancing signaling bandwidth in an integrated circuit package |
| CN110634796A (zh) | 2018-06-25 | 2019-12-31 | 半导体元件工业有限责任公司 | 用于处理电子管芯的方法及半导体晶圆和管芯的切单方法 |
| US10916474B2 (en) | 2018-06-25 | 2021-02-09 | Semiconductor Components Industries, Llc | Method of reducing residual contamination in singulated semiconductor die |
| US11791212B2 (en) * | 2019-12-13 | 2023-10-17 | Micron Technology, Inc. | Thin die release for semiconductor device assembly |
| KR102872928B1 (ko) * | 2019-12-30 | 2025-10-16 | 삼성전자주식회사 | 반도체 웨이퍼 및 그 제조 방법 |
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| JP2985484B2 (ja) * | 1992-03-19 | 1999-11-29 | 株式会社日立製作所 | 半導体装置とその製造方法 |
| US4820377A (en) * | 1987-07-16 | 1989-04-11 | Texas Instruments Incorporated | Method for cleanup processing chamber and vacuum process module |
| US5075253A (en) * | 1989-04-12 | 1991-12-24 | Advanced Micro Devices, Inc. | Method of coplanar integration of semiconductor IC devices |
| JPH05267449A (ja) * | 1992-03-19 | 1993-10-15 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| US5300461A (en) * | 1993-01-25 | 1994-04-05 | Intel Corporation | Process for fabricating sealed semiconductor chip using silicon nitride passivation film |
| US6030885A (en) * | 1997-04-18 | 2000-02-29 | Vlsi Technology, Inc. | Hexagonal semiconductor die, semiconductor substrates, and methods of forming a semiconductor die |
| US5982018A (en) * | 1997-05-23 | 1999-11-09 | Micron Technology, Inc. | Thin film capacitor coupons for memory modules and multi-chip modules |
| JPH11168172A (ja) * | 1997-12-04 | 1999-06-22 | Toshiba Tec Corp | 半導体チップの製造方法及びその半導体チップによる3次元構造体、その製造方法及びその電気的接続方法 |
| US6214703B1 (en) * | 1999-04-15 | 2001-04-10 | Taiwan Semiconductor Manufacturing Company | Method to increase wafer utility by implementing deep trench in scribe line |
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| US6686225B2 (en) * | 2001-07-27 | 2004-02-03 | Texas Instruments Incorporated | Method of separating semiconductor dies from a wafer |
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| JP2007294612A (ja) * | 2006-04-24 | 2007-11-08 | Oki Data Corp | 半導体装置、半導体装置の製造方法、半導体製造装置、ledヘッド、および画像形成装置 |
| JP5023614B2 (ja) | 2006-08-24 | 2012-09-12 | パナソニック株式会社 | 半導体チップの製造方法及び半導体ウエハの処理方法 |
| JP4544231B2 (ja) | 2006-10-06 | 2010-09-15 | パナソニック株式会社 | 半導体チップの製造方法 |
| JP2008159985A (ja) | 2006-12-26 | 2008-07-10 | Matsushita Electric Ind Co Ltd | 半導体チップの製造方法 |
| JP4840174B2 (ja) | 2007-02-08 | 2011-12-21 | パナソニック株式会社 | 半導体チップの製造方法 |
| JP2008217384A (ja) * | 2007-03-05 | 2008-09-18 | Hitachi Ltd | 回路チップ及びその製造方法、並びにこれを搭載したrfid回路装置 |
| US7705440B2 (en) * | 2007-09-07 | 2010-04-27 | Freescale Semiconductor, Inc. | Substrate having through-wafer vias and method of forming |
| TW200935506A (en) | 2007-11-16 | 2009-08-16 | Panasonic Corp | Plasma dicing apparatus and semiconductor chip manufacturing method |
| JP2009164263A (ja) * | 2007-12-28 | 2009-07-23 | Nec Electronics Corp | 配線モジュール及び半導体集積回路装置 |
-
2010
- 2010-01-18 US US12/689,126 patent/US8384231B2/en active Active
- 2010-12-30 TW TW099147016A patent/TW201135868A/zh unknown
-
2011
- 2011-01-17 KR KR1020110004372A patent/KR20110084836A/ko not_active Withdrawn
- 2011-01-18 JP JP2011007523A patent/JP2011146718A/ja active Pending
- 2011-01-18 CN CN201110009539XA patent/CN102130022A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CN102130022A (zh) | 2011-07-20 |
| US8384231B2 (en) | 2013-02-26 |
| KR20110084836A (ko) | 2011-07-26 |
| JP2011146718A (ja) | 2011-07-28 |
| US20110175242A1 (en) | 2011-07-21 |
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