TW201130164A - Semiconductor light emitting element, light emitting device using semiconductor light emitting element, and electronic apparatus - Google Patents

Semiconductor light emitting element, light emitting device using semiconductor light emitting element, and electronic apparatus

Info

Publication number
TW201130164A
TW201130164A TW099143238A TW99143238A TW201130164A TW 201130164 A TW201130164 A TW 201130164A TW 099143238 A TW099143238 A TW 099143238A TW 99143238 A TW99143238 A TW 99143238A TW 201130164 A TW201130164 A TW 201130164A
Authority
TW
Taiwan
Prior art keywords
light emitting
emitting element
type semiconductor
semiconductor layer
semiconductor light
Prior art date
Application number
TW099143238A
Other languages
English (en)
Other versions
TWI446589B (zh
Inventor
Takashi Hodota
Takehiko Okabe
Original Assignee
Showa Denko Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko Kk filed Critical Showa Denko Kk
Publication of TW201130164A publication Critical patent/TW201130164A/zh
Application granted granted Critical
Publication of TWI446589B publication Critical patent/TWI446589B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
TW099143238A 2009-12-11 2010-12-10 A semiconductor light-emitting element, a light-emitting device using a semiconductor light-emitting element, and an electronic device TWI446589B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009282183 2009-12-11

Publications (2)

Publication Number Publication Date
TW201130164A true TW201130164A (en) 2011-09-01
TWI446589B TWI446589B (zh) 2014-07-21

Family

ID=44145645

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099143238A TWI446589B (zh) 2009-12-11 2010-12-10 A semiconductor light-emitting element, a light-emitting device using a semiconductor light-emitting element, and an electronic device

Country Status (4)

Country Link
US (1) US8637888B2 (zh)
JP (1) JPWO2011071100A1 (zh)
TW (1) TWI446589B (zh)
WO (1) WO2011071100A1 (zh)

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CN103107260A (zh) * 2011-11-15 2013-05-15 Lg伊诺特有限公司 发光器件
TWI478387B (zh) * 2013-10-23 2015-03-21 Lextar Electronics Corp 發光二極體結構
CN104752576A (zh) * 2013-12-30 2015-07-01 新世纪光电股份有限公司 发光芯片
CN107393428A (zh) * 2017-05-04 2017-11-24 财团法人交大思源基金会 无电极遮光的发光二极管显示器的结构及其工艺
US10580934B2 (en) 2016-08-18 2020-03-03 Genesis Photonics Inc. Micro light emitting diode and manufacturing method thereof
TWI710144B (zh) * 2015-02-17 2020-11-11 新世紀光電股份有限公司 具布拉格反射鏡之發光二極體及其製造方法

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US7915629B2 (en) 2008-12-08 2011-03-29 Cree, Inc. Composite high reflectivity layer
US9461201B2 (en) 2007-11-14 2016-10-04 Cree, Inc. Light emitting diode dielectric mirror
US9293656B2 (en) * 2012-11-02 2016-03-22 Epistar Corporation Light emitting device
US8716723B2 (en) * 2008-08-18 2014-05-06 Tsmc Solid State Lighting Ltd. Reflective layer between light-emitting diodes
US9362459B2 (en) 2009-09-02 2016-06-07 United States Department Of Energy High reflectivity mirrors and method for making same
US9435493B2 (en) 2009-10-27 2016-09-06 Cree, Inc. Hybrid reflector system for lighting device
US9012938B2 (en) 2010-04-09 2015-04-21 Cree, Inc. High reflective substrate of light emitting devices with improved light output
US9105824B2 (en) 2010-04-09 2015-08-11 Cree, Inc. High reflective board or substrate for LEDs
US8764224B2 (en) 2010-08-12 2014-07-01 Cree, Inc. Luminaire with distributed LED sources
US8653542B2 (en) * 2011-01-13 2014-02-18 Tsmc Solid State Lighting Ltd. Micro-interconnects for light-emitting diodes
JP4940363B1 (ja) * 2011-02-28 2012-05-30 株式会社東芝 半導体発光素子及び半導体発光装置
US8680556B2 (en) * 2011-03-24 2014-03-25 Cree, Inc. Composite high reflectivity layer
TWI483431B (zh) * 2011-04-01 2015-05-01 Huga Optotech Inc 半導體發光結構
US8686429B2 (en) 2011-06-24 2014-04-01 Cree, Inc. LED structure with enhanced mirror reflectivity
US10243121B2 (en) 2011-06-24 2019-03-26 Cree, Inc. High voltage monolithic LED chip with improved reliability
US9728676B2 (en) 2011-06-24 2017-08-08 Cree, Inc. High voltage monolithic LED chip
JPWO2013011674A1 (ja) * 2011-07-15 2015-02-23 パナソニック株式会社 半導体発光素子
JP2013030634A (ja) * 2011-07-28 2013-02-07 Showa Denko Kk 半導体発光素子
DE102011052605B4 (de) * 2011-08-11 2014-07-10 Infineon Technologies Austria Ag Verfahren zur Herstellung einer Halbleitervorrichtung
KR101969334B1 (ko) 2011-11-16 2019-04-17 엘지이노텍 주식회사 발광 소자 및 이를 구비한 발광 장치
JP5639626B2 (ja) * 2012-01-13 2014-12-10 シャープ株式会社 半導体発光素子及び電極成膜方法
TWI572054B (zh) 2012-03-16 2017-02-21 晶元光電股份有限公司 高亮度發光二極體結構與其製造方法
KR102019497B1 (ko) * 2012-04-19 2019-09-06 엘지이노텍 주식회사 발광소자
US9660043B2 (en) 2012-06-04 2017-05-23 Sensor Electronic Technology, Inc. Ohmic contact to semiconductor layer
US9793439B2 (en) 2012-07-12 2017-10-17 Sensor Electronic Technology, Inc. Metallic contact for optoelectronic semiconductor device
JP2014053593A (ja) * 2012-08-09 2014-03-20 Sharp Corp 半導体発光素子およびその製造方法
US9536924B2 (en) 2012-12-06 2017-01-03 Seoul Viosys Co., Ltd. Light-emitting diode and application therefor
CN105074941B (zh) * 2012-12-06 2019-10-08 首尔伟傲世有限公司 发光二极管、照明模块、照明设备和背光单元
KR102071036B1 (ko) * 2012-12-28 2020-01-29 서울바이오시스 주식회사 발광 다이오드 및 그것을 채택하는 조명 장치
JP2014127565A (ja) * 2012-12-26 2014-07-07 Toyoda Gosei Co Ltd 半導体発光素子
KR20140140166A (ko) * 2013-05-28 2014-12-09 포항공과대학교 산학협력단 발광 다이오드
WO2014197512A1 (en) * 2013-06-04 2014-12-11 Cree, Inc. Light emitting diode dielectric mirror
JP6261927B2 (ja) * 2013-09-24 2018-01-17 スタンレー電気株式会社 半導体発光素子
TWI509836B (zh) * 2013-10-24 2015-11-21 Lextar Electronics Corp 發光二極體結構
TW201517328A (zh) * 2013-10-25 2015-05-01 Wintek Corp 發光二極體結構
TWI536607B (zh) * 2013-11-11 2016-06-01 隆達電子股份有限公司 一種電極結構
TWI591848B (zh) 2013-11-28 2017-07-11 晶元光電股份有限公司 發光元件及其製造方法
CN105449068A (zh) * 2014-07-28 2016-03-30 无锡华润华晶微电子有限公司 一种led芯片及其制作方法
US10658546B2 (en) 2015-01-21 2020-05-19 Cree, Inc. High efficiency LEDs and methods of manufacturing
TWI583019B (zh) * 2015-02-17 2017-05-11 新世紀光電股份有限公司 Light emitting diode and manufacturing method thereof
US10236413B2 (en) 2015-04-20 2019-03-19 Epistar Corporation Light-emitting device and manufacturing method thereof
JP6160726B2 (ja) * 2015-04-27 2017-07-12 日亜化学工業株式会社 発光装置
JP6260640B2 (ja) * 2015-05-22 2018-01-17 日亜化学工業株式会社 発光素子
US10217914B2 (en) 2015-05-27 2019-02-26 Samsung Electronics Co., Ltd. Semiconductor light emitting device
KR102373677B1 (ko) * 2015-08-24 2022-03-14 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자
CN106848032B (zh) * 2015-12-04 2019-06-18 上海芯元基半导体科技有限公司 一种晶圆级封装的led器件结构
US9893239B2 (en) * 2015-12-08 2018-02-13 Nichia Corporation Method of manufacturing light emitting device
JP6520964B2 (ja) 2017-01-26 2019-05-29 日亜化学工業株式会社 発光素子の製造方法
JP2019149480A (ja) * 2018-02-27 2019-09-05 豊田合成株式会社 半導体素子、発光装置、および発光装置の製造方法
US10643964B2 (en) * 2018-07-02 2020-05-05 Taiwan Semiconductor Manufacturing Co., Ltd. Structures for bonding a group III-V device to a substrate by stacked conductive bumps
CN116964760A (zh) * 2022-10-27 2023-10-27 厦门三安光电有限公司 发光二极管及发光装置

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JP2828187B2 (ja) 1993-04-08 1998-11-25 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子
JP2005244207A (ja) 2004-01-30 2005-09-08 Showa Denko Kk 窒化ガリウム系化合物半導体発光素子
JP4453515B2 (ja) 2004-10-22 2010-04-21 豊田合成株式会社 半導体発光素子
KR100638813B1 (ko) 2005-04-15 2006-10-27 삼성전기주식회사 플립칩형 질화물 반도체 발광소자
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JP2009164423A (ja) * 2008-01-08 2009-07-23 Nichia Corp 発光素子
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Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103107260B (zh) * 2011-11-15 2017-05-03 Lg伊诺特有限公司 发光器件
CN103107260A (zh) * 2011-11-15 2013-05-15 Lg伊诺特有限公司 发光器件
TWI478387B (zh) * 2013-10-23 2015-03-21 Lextar Electronics Corp 發光二極體結構
TWI616002B (zh) * 2013-12-30 2018-02-21 新世紀光電股份有限公司 發光晶片
US9577154B2 (en) 2013-12-30 2017-02-21 Genesis Photonics Inc. Light emitting chip
CN104752576A (zh) * 2013-12-30 2015-07-01 新世纪光电股份有限公司 发光芯片
TWI710144B (zh) * 2015-02-17 2020-11-11 新世紀光電股份有限公司 具布拉格反射鏡之發光二極體及其製造方法
US10580934B2 (en) 2016-08-18 2020-03-03 Genesis Photonics Inc. Micro light emitting diode and manufacturing method thereof
CN107393428A (zh) * 2017-05-04 2017-11-24 财团法人交大思源基金会 无电极遮光的发光二极管显示器的结构及其工艺
TWI676285B (zh) * 2017-05-04 2019-11-01 國立交通大學 無電極遮光之發光二極體顯示器的結構及其製程
US10535708B2 (en) 2017-05-04 2020-01-14 National Chiao Tung University Electrodeless light-emitting diode display and method for fabricating the same
US10553640B2 (en) 2017-05-04 2020-02-04 National Chiao Tung University Electrodeless light-emitting diode display and method for fabricating the same
CN107393428B (zh) * 2017-05-04 2020-04-28 财团法人交大思源基金会 无电极遮光的发光二极管显示器的结构及其工艺

Also Published As

Publication number Publication date
JPWO2011071100A1 (ja) 2013-04-22
US8637888B2 (en) 2014-01-28
TWI446589B (zh) 2014-07-21
WO2011071100A1 (ja) 2011-06-16
US20120235204A1 (en) 2012-09-20

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