WO2011071100A1 - 半導体発光素子、半導体発光素子を用いた発光装置および電子機器 - Google Patents

半導体発光素子、半導体発光素子を用いた発光装置および電子機器 Download PDF

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WO2011071100A1
WO2011071100A1 PCT/JP2010/072088 JP2010072088W WO2011071100A1 WO 2011071100 A1 WO2011071100 A1 WO 2011071100A1 JP 2010072088 W JP2010072088 W JP 2010072088W WO 2011071100 A1 WO2011071100 A1 WO 2011071100A1
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layer
light emitting
electrode
semiconductor
refractive index
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PCT/JP2010/072088
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English (en)
French (fr)
Japanese (ja)
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高史 程田
健彦 岡部
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昭和電工株式会社
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Priority to JP2011545236A priority Critical patent/JPWO2011071100A1/ja
Priority to US13/514,809 priority patent/US8637888B2/en
Publication of WO2011071100A1 publication Critical patent/WO2011071100A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes

Definitions

  • the present invention relates to a semiconductor light emitting element, a light emitting device using the semiconductor light emitting element, and an electronic apparatus.
  • a semiconductor light-emitting device using a group III nitride semiconductor such as GaN is usually configured by forming a group III nitride semiconductor layer including a light emitting layer on a substrate such as sapphire.
  • the semiconductor light emitting device is mounted on the wiring substrate by flip chip, so that the light output from the light emitting layer is emitted to the outside through the substrate.
  • a metal reflective film made of silver or the like is formed on the surface side opposite to the contact surface of the group III nitride semiconductor layer with the substrate, so that the light emitting layer and the substrate There is one in which light output to the opposite side is reflected toward the substrate side (see Patent Document 1).
  • a multiple reflection film made of a dielectric on the surface side opposite to the contact surface of the group III nitride semiconductor layer with the substrate, the light emitting layer to the substrate There is one in which light output to the opposite side is reflected toward the substrate side (see Patent Document 2).
  • An object of the present invention is to improve the light extraction efficiency in a semiconductor light emitting device mounted by flip chip.
  • the semiconductor light-emitting device of the present invention includes a first semiconductor layer composed of a group III nitride semiconductor having a first conductivity type, and one surface of the first semiconductor layer on the one surface.
  • a second light emitting layer that is laminated so as to be partially exposed and emits light when energized, and a group III nitride semiconductor having a second conductivity type different from the first conductivity type, and is laminated on the light emitting layer.
  • a semiconductor layer a first refractive index layer having a first refractive index and transparency to light emitted from the light emitting layer, and a second refractive index higher than the first refractive index and emitted from the light emitting layer
  • a first multilayer reflective film that is formed by alternately laminating second refractive index layers that are transparent to light to be emitted, and is laminated at an exposed portion on the one surface side of the first semiconductor layer;
  • One multilayer reflection film is formed so as to penetrate one end of the first semiconductor layer
  • a first conductor portion that is connected to the exposed portion, characterized in that it comprises a first electrode to which the first laminated to the multilayer reflection film and the other end of said first conductor portion is connected.
  • a transparent conductive layer made of a metal oxide having transparency and conductivity with respect to light emitted from the light emitting layer; and a transparent conductive layer laminated on the second semiconductor layer;
  • a first refractive index layer having transparency to the emitted light and a second refractive index layer having a second refractive index higher than the first refractive index and having transparency to the light emitted from the light emitting layer.
  • a second multilayer reflective film configured by alternately laminating and laminated on the transparent conductive layer, and a second conductor part formed through the second multilayer reflective film and having one end connected to the transparent conductive layer And a second electrode laminated on the second multilayer reflective film and connected to the other end of the second conductor part.
  • the second conductor portion has a plurality of connection conductors, each of which has one end connected to the transparent conductive layer and each other end connected to the second electrode. .
  • the plurality of connection conductors constituting the second conductor portion are formed such that the number increases as the distance from the connection portion between the first conductor portion and the first semiconductor layer increases.
  • the plurality of connection conductors constituting the second conductor portion are formed such that a cross-sectional area increases as a distance from the connection portion between the first conductor portion and the first semiconductor layer increases. It is characterized by.
  • the first electrode includes a first reflective layer having reflectivity for light emitted from the light emitting layer
  • the second electrode includes a second reflective layer having reflectivity for light emitted from the light emitting layer. It is characterized by providing.
  • the second conductor portion and the second electrode are formed of a plurality of layers that are continuous in the surface direction.
  • the first multilayer reflective film and the second multilayer reflective film are configured as an integrated unit that is continuous in a plane direction.
  • first electrode and the second electrode have a first opening and a second opening used for electrical connection with the outside, and the first opening and the second opening And a first protruding electrode and a second protruding electrode, each of which is used for electrical connection to the outside, wherein the first protruding electrode and the second protruding electrode include Sn for connecting to the outside. It has an electrode at the tip.
  • the light emitting device to which the present invention is applied includes a base portion on which the first wiring and the second wiring are formed, and a semiconductor light emitting element that is flip-chip connected to the base portion.
  • the semiconductor light emitting device has a first semiconductor layer made of a group III nitride semiconductor having a first conductivity type, and a part of the one surface exposed on one surface of the first semiconductor layer.
  • a light emitting layer that is laminated and emits light when energized, a group III nitride semiconductor having a second conductivity type different from the first conductivity type, a second semiconductor layer stacked on the light emitting layer, and a first refraction
  • a first refractive index layer having a refractive index and transparency to light emitted from the light emitting layer, and a second refractive index higher than the first refractive index and having transparency to light emitted from the light emitting layer.
  • a first multilayer reflective film formed on the exposed surface of the first semiconductor layer on the one surface side, and formed through the first multilayer reflective film, and one end of the first semiconductor layer is formed on the first semiconductor layer.
  • a first conductor portion connected to the exposed portion, and a first electrode laminated on the first multilayer reflective film and connected to the other end of the first conductor portion.
  • an electronic device to which the present invention is applied incorporates a semiconductor light emitting element as described above.
  • FIG. 2 is a cross-sectional view taken along the line II-II in FIG. It is an example of the cross-sectional schematic diagram of the multilayer reflecting film which comprises a semiconductor light-emitting device. It is a figure which shows an example of the light-emitting device which flip-chip mounted the semiconductor light-emitting element on the wiring board. It is a plane schematic diagram of the semiconductor light-emitting device by other embodiment.
  • FIG. 6 is a sectional view taken along line VI-VI in FIG. 5. It is a plane schematic diagram of the semiconductor light emitting element by further another embodiment.
  • FIG. 1 is a schematic plan view of a semiconductor light emitting element (light emitting diode) 1 to which the present embodiment is applied
  • FIG. 2 is a sectional view taken along II-II of the semiconductor light emitting element 1 shown in FIG. .
  • FIG. 1 for convenience, a top view of the semiconductor light emitting element 1 from which a protective layer 320 described later is removed is shown.
  • the semiconductor light emitting device 1 shown in FIGS. 1 and 2 includes a substrate 110, an intermediate layer 120 stacked on the substrate 110, and a base layer 130 stacked on the intermediate layer 120.
  • the semiconductor light emitting device 1 includes an n-type semiconductor layer 140 as an example of a first semiconductor layer stacked on the base layer 130, a light-emitting layer 150 stacked on the n-type semiconductor layer 140, and a light-emitting layer.
  • a p-type semiconductor layer 160 as an example of a second semiconductor layer stacked on the substrate 150.
  • the n-type semiconductor layer 140, the light emitting layer 150, and the p-type semiconductor layer 160 are collectively referred to as a laminated semiconductor layer 100 as necessary.
  • an upper surface 140 c of the n-type semiconductor layer 140 exposed by cutting out a part of the stacked p-type semiconductor layer 160, the light-emitting layer 150, and the n-type semiconductor layer 140 is formed. Further, on the p-type semiconductor layer 160, a transparent conductive layer 170 having conductivity and transparency to the light output from the light emitting layer 150 is laminated.
  • the semiconductor light emitting device 1 further includes a multilayer reflective film 180 in which a plurality of through holes are formed.
  • the multilayer reflective film 180 is made of a material having insulating properties and transparency to the light output from the light emitting layer 150. However, since the multilayer reflective film 180 has a multilayer structure described later, the light output from the light emitting layer 150 is reflected. It has the function of reflecting.
  • the multilayer reflective film 180 is formed by being laminated on the transparent conductive layer 170, the p-type semiconductor layer 160 on which the transparent conductive layer 170 is not laminated, and the n-type semiconductor layer 140 on which the light emitting layer 150 is not laminated. .
  • the multilayer reflective film 180 covers the side surfaces of the light emitting layer 150 and the p-type semiconductor layer 160, that is, the portion corresponding to the stepped wall formed by the p-type semiconductor layer 160 and the n-type semiconductor layer 140. Further, the multilayer reflective film 180 also covers the side surface of the transparent conductive layer 170. A part of the plurality of through holes provided in the multilayer reflective film 180 is formed above the transparent conductive layer 170 in a direction perpendicular to the surface of the transparent conductive layer 170, and each through hole has a substantially lattice shape. Has been placed. The remaining part of the plurality of through holes provided in the multilayer reflective film 180 is formed on the upper surface 140c of the n-type semiconductor layer 140 in a direction perpendicular to the upper surface 140c. Arranged in a shape.
  • the semiconductor light emitting element 1 is an example of a second conductor portion formed through a plurality of through holes provided in the upper part of the transparent conductive layer 170 among the plurality of through holes provided in the multilayer reflective film 180.
  • the p conductor part 200 is provided.
  • the p conductor portions 200 are configured by the same number of p connection conductors 202 as the through holes provided in the upper portion of the transparent conductive layer 170, and the p connection conductors 202 are arranged on the transparent conductive layer 170 in a substantially grid pattern. Has been.
  • the semiconductor light emitting element 1 includes a p-electrode 300 as an example of a second electrode laminated on the multilayer reflective film 180 at a position facing the transparent conductive layer 170 with the multilayer reflective film 180 interposed therebetween.
  • One end of each of the plurality of p connection conductors 202 constituting the p conductor portion 200 is connected to the transparent conductive layer 170, and the other end is connected to the p electrode 300.
  • the semiconductor light emitting element 1 includes an n conductor formed through a plurality of through holes provided in an upper portion of the upper surface 140c, which is an example of an exposed portion, among the plurality of through holes provided in the multilayer reflective film 180.
  • Part 400 is provided.
  • the n conductor portions 400 are configured by the same number of n connection conductors 402 as the through holes provided in the upper portion of the upper surface 140c.
  • the n connection conductors 402 are arranged on the upper surface 140c in a substantially lattice shape.
  • the semiconductor light emitting element 1 includes an n electrode 310 as an example of a first electrode laminated on the multilayer reflective film 180 at a position facing the upper surface 140c with the multilayer reflective film 180 interposed therebetween.
  • One end of each of the plurality of n connection conductors 402 constituting the n conductor portion 400 is connected to the upper surface 140 c, and the other end is connected to the n electrode 310.
  • the semiconductor light emitting device 1 includes a protective layer 320.
  • the protective layer 320 is laminated on the laminated semiconductor layer 100 in which the n-electrode 310 and the p-electrode 300, the multilayer reflective film 180, and the multilayer reflective film 180 are not laminated.
  • the semiconductor light emitting device 1 of the present embodiment has a structure in which the p-electrode 300 and the n-electrode 310 are formed on one surface side opposite to the substrate 110.
  • the p electrode 300 is a positive electrode and the n electrode 310 is a negative electrode, and the stacked semiconductor layer 100 (more specifically, the p-type semiconductor layer 160, the light-emitting layer 150, and the n-type semiconductor layer is interposed therebetween. 140), the light emitting layer 150 emits light.
  • the substrate 110 is not particularly limited as long as a group III nitride semiconductor crystal is epitaxially grown on the surface, and various substrates can be selected and used. In the present invention, the substrate 110 is not an essential component.
  • the semiconductor light emitting device 1 of the present embodiment is flip-chip mounted so as to extract light from the substrate 110 side, as will be described later. Therefore, it is preferable that the light emitted from the light emitting layer 150 has a light transmission property in order to increase the light extraction efficiency.
  • sapphire whose C surface is the main surface as the substrate 110. It is preferable in order to increase the extraction efficiency.
  • an intermediate layer 120 is preferably formed on the C surface of sapphire.
  • the intermediate layer 120 is preferably made of polycrystalline Al x Ga 1-x N ( 0 ⁇ x ⁇ 1) , more preferably a single-crystal Al x Ga 1-x N ( 0 ⁇ x ⁇ 1)
  • the thickness may be 10 to 500 nm made of polycrystalline Al x Ga 1-x N (0 ⁇ x ⁇ 1).
  • the intermediate layer 120 works to alleviate the difference in lattice constant between the substrate 110 and the base layer 130 and facilitate the formation of a c-axis oriented single crystal layer on the (0001) plane (C plane) of the substrate 110. There is. Therefore, when the single crystal base layer 130 is stacked on the intermediate layer 120, the base layer 130 with higher crystallinity can be stacked.
  • the intermediate layer 120 is not an essential component.
  • the film thickness of the underlayer 130 is preferably 0.1 ⁇ m or more, and an Al x Ga 1-x N layer with good crystallinity is more easily obtained when the film thickness is greater than this value . Further, the film thickness of the underlayer 130 is preferably 10 ⁇ m or less. In the present invention, the foundation layer 130 is not an essential component.
  • the stacked semiconductor layer 100 including a group III nitride semiconductor includes an n-type semiconductor layer 140, a light-emitting layer 150, and a p-type semiconductor layer 160 on a substrate 110 in this order. It is laminated and configured.
  • Each of the n-type semiconductor layer 140, the light emitting layer 150, and the p-type semiconductor layer 160 may be composed of a plurality of semiconductor layers.
  • the base layer 130 and the intermediate layer 120 may be referred to as the laminated semiconductor layer 100.
  • the n-type semiconductor layer 140 conducts electricity in the first conductivity type using electrons as carriers
  • the p-type semiconductor layer 160 conducts electricity in the second conductivity type using holes as carriers. Is to do.
  • the n-type semiconductor layer 140 as an example of the first semiconductor layer having the first conductivity type is preferably composed of an n-contact layer and an n-cladding layer.
  • the n contact layer can also serve as the n clad layer.
  • the base layer 130 described above may be included in the n-type semiconductor layer 140.
  • the n contact layer is a layer for providing the n electrode 310.
  • the n contact layer is preferably composed of an Al x Ga 1-x N layer (0 ⁇ x ⁇ 1, preferably 0 ⁇ x ⁇ 0.5, more preferably 0 ⁇ x ⁇ 0.1).
  • the n-cladding layer is a layer for injecting carriers into the light emitting layer 150 and confining carriers.
  • AlGaN, GaN, and GaInN may be described in a form in which the composition ratio of each element is omitted.
  • the n-clad layer can be formed of AlGaN, GaN, GaInN, or the like. Alternatively, a heterojunction of these structures or a superlattice structure in which a plurality of layers are stacked may be used.
  • the n-cladding layer is formed of GaInN, it is desirable to make it larger than the GaInN band gap of the light emitting layer 150.
  • the composition of the n-side first layer made of a group III nitride semiconductor having a film thickness of 100 angstroms or less may include a structure in which an n-side second layer made of a group III nitride semiconductor having a different thickness and a thickness of 100 angstroms or less is stacked.
  • the n-clad layer may include a structure in which the n-side first layer and the n-side second layer are alternately and repeatedly stacked.
  • the GaInN and GaN alternate structures or GaInNs having different compositions may be used. It is preferable that this is an alternate structure.
  • ⁇ Light emitting layer> As the light emitting layer 150 stacked on the n-type semiconductor layer 140, a single quantum well structure or a multiple quantum well structure can be employed.
  • As the well layer of the quantum well structure a group III nitride semiconductor layer made of Ga 1-y In y N (0 ⁇ y ⁇ 0.4) is usually used.
  • the film thickness of the well layer can be a film thickness that provides a quantum effect, for example, 1 to 10 nm, and preferably 2 to 6 nm, from the viewpoint of light emission output.
  • the Ga 1-y In y N is used as a well layer, and Al z Ga 1-z N (0 ⁇ z ⁇ 0.3) having a larger band gap energy than the well layer.
  • Al z Ga 1-z N (0 ⁇ z ⁇ 0.3) having a larger band gap energy than the well layer.
  • the well layer and the barrier layer may or may not be doped with impurities by design.
  • the p-type semiconductor layer 160 as an example of the second semiconductor layer having the second conductivity type uses, for example, holes as carriers. Usually, it is composed of a p-cladding layer and a p-contact layer. The p contact layer can also serve as the p clad layer.
  • the p-cladding layer is a layer for confining carriers in the light emitting layer 150 and injecting carriers.
  • the p-cladding layer is not particularly limited as long as it has a composition larger than the band gap energy of the light-emitting layer 150 and can confine carriers in the light-emitting layer 150, but is preferably Al x Ga 1-x N ( 0 ⁇ x ⁇ 0.4).
  • the film thickness of the p-cladding layer is not particularly limited, but is preferably 1 to 400 nm, more preferably 5 to 100 nm.
  • the p-cladding layer may have a superlattice structure in which a plurality of layers are stacked, and preferably has an alternating structure of AlGaN and AlGaN or an alternating structure of AlGaN and GaN.
  • the p contact layer is a layer for providing the p electrode 300.
  • the p contact layer is preferably Al x Ga 1-x N (0 ⁇ x ⁇ 0.4).
  • the thickness of the p-contact layer is not particularly limited, but is preferably 10 to 500 nm, more preferably 50 to 200 nm. When the thickness of the p-contact layer is within this range, it is preferable in terms of light emission output.
  • a transparent conductive layer 170 is stacked on the p-type semiconductor layer 160.
  • the transparent conductive layer 170 has a peripheral portion of the upper surface 160c of the p-type semiconductor layer 160 partially removed by etching or the like to form the n-electrode 310 when viewed in plan as shown in FIG. It is formed so as to cover almost the entire surface.
  • the transparent conductive layer 170 is formed on the back side of the multilayer reflective film 180, it is hidden behind it.
  • the transparent conductive layer 170 has an ohmic contact with the p-type semiconductor layer 160 and has a low contact resistance with the p-type semiconductor layer 160. Further, in this semiconductor light emitting device 1, since the light from the light emitting layer 150 is taken out to the substrate 110 side through the multilayer reflective film 180 or the like, it is preferable to use the transparent conductive layer 170 having excellent light transmittance. . Furthermore, in order to uniformly diffuse the current over the entire surface of the p-type semiconductor layer 160, it is preferable to use the transparent conductive layer 170 having excellent conductivity and a small resistance distribution.
  • the thickness of the transparent conductive layer 170 can be selected from a range of 2 nm to 500 nm.
  • the thickness of the transparent conductive layer 170 is less than 2 nm, ohmic contact with the p-type semiconductor layer 160 may be difficult, and if the thickness of the transparent conductive layer 170 is greater than 500 nm, the light emitting layer is formed. In some cases, it is not preferable in terms of light transmission from 150 and light transmittance of reflected light from the multilayer reflective film 180 and the like.
  • an oxide conductive material that has good light transmittance with respect to light having a wavelength emitted from the light emitting layer 150 is used.
  • a part of the oxide containing In is preferable in that both light transmittance and conductivity are superior to other transparent conductive films.
  • the conductive oxide containing In include IZO (indium zinc oxide (In 2 O 3 —ZnO)), ITO (indium tin oxide (In 2 O 3 —SnO 2 )), and IGO (indium gallium oxide ( In 2 O 3 —Ga 2 O 3 )), ICO (indium cerium oxide (In 2 O 3 —CeO 2 )) and the like.
  • a dopant such as fluorine may be added.
  • an oxide containing no In for example, a conductive material such as SnO 2 , ZnO 2 , or TiO 2 doped with carriers may be used.
  • the transparent conductive layer 170 can be formed by providing these materials by conventional means well known in this technical field. By performing thermal annealing after forming the transparent conductive layer 170, the transmittance of the transparent conductive layer 170 increases, the sheet resistance decreases, and an ohmic contact can be obtained.
  • the transparent conductive layer 170 may have a crystallized structure, and in particular, a light-transmitting material including an In 2 O 3 crystal having a hexagonal crystal structure or a bixbite structure (for example, IZO, ITO, etc.) can be preferably used.
  • membrane used for the transparent conductive layer 170 it is preferable to use the composition in which specific resistance becomes the lowest.
  • the ZnO concentration in IZO is preferably 1 to 20% by mass, more preferably 5 to 15% by mass, and particularly preferably 10% by mass.
  • the multilayer reflective film 180 covers the transparent conductive layer 170, the p-type semiconductor layer 160 where the transparent conductive layer 170 is not stacked, and the n-type semiconductor layer 140 where the light emitting layer 150 is not stacked. Are stacked.
  • the multilayer reflective film 180 not only covers the surface of each layer in the plane direction, but also the step formed by the side surfaces of the light emitting layer 150 and the p-type semiconductor layer 160, that is, the p-type semiconductor layer 160 and the n-type semiconductor layer 140.
  • the multilayer reflective film 180 also covers the side surface of the transparent conductive layer 170.
  • the multilayer reflective film 180 shown in FIG. 2 has an integral structure that is continuous in the plane direction of the laminated semiconductor layer 100.
  • the multilayer reflective film 180 may be two or more multilayer reflective films 180 separated in the plane direction of the laminated semiconductor layer 100.
  • the transparent conductive layer 170 as an example of the second multilayer reflective film
  • the light emission as an example of the first multilayer reflective film.
  • Two multilayer reflective films 180 may be formed by separately forming a portion laminated on the n-type semiconductor layer 140 where the layer 150 is not laminated.
  • the n-electrode 310 side and the p-electrode 300 side are formed as separate multilayer reflective films 180.
  • the configuration in which the multilayer reflective film 180 is integrally formed continuously in the plane direction is preferable because the light extraction efficiency can be improved compared to the configuration in which the multilayer reflective film 180 is formed separately.
  • the multilayer reflective film 180 may be formed only on either the n-electrode 310 side or the p-electrode 300 side.
  • FIG. 3 shows an example of a schematic cross-sectional view of the multilayer reflective film 180.
  • the multilayer reflective film 180 is configured by alternately laminating a low refractive index layer 180a as an example of a first refractive index layer having a different refractive index and a high refractive index layer 180b as an example of a second refractive index layer.
  • a configuration in which one high refractive index layer 180b is sandwiched between two low refractive index layers 180a is adopted.
  • five layers are provided between six low refractive index layers 180a.
  • the uppermost layer of the multilayer reflective film 180 that is exposed to the outside may be composed of the low refractive index layer 180a or the high refractive index layer 180b.
  • the low-refractive index layer 180a and the high-refractive index layer 180b a material having high light transmission performance with respect to light output from the light emitting layer 150 is used.
  • the low refractive index layer 180a for example, SiO 2 (silicon oxide) or MgF 2 (magnesium fluoride) can be used
  • the high refractive index layer 180b TiO 2 (titanium oxide), Ta 2 O 5 (tantalum oxide), ZrO 2 (zirconium oxide), HfO 2 (hafnium oxide), and Nb 2 O 5 (niobium oxide) can be used.
  • these TiO 2 , Ta 2 O 5 , ZrO 2 , HfO 2 , and Nb 2 O 5 are used for the low refractive index layer 180a. It doesn't matter.
  • SiO 2 silicon oxide
  • TiO 2 titanium oxide
  • high refractive index layer 180b SiO 2 (silicon oxide)
  • SiO 2 silicon oxide
  • TiO 2 titanium oxide
  • ⁇ 400 nm to 450 nm
  • Ta 2 O 5 tantalum oxide
  • TiO 2 titanium oxide
  • a layer having an optical band gap larger than TiO 2 may be used as the high refractive index layer 180b. desirable.
  • SiO 2 silicon oxide
  • the layer thickness d H of the layer thickness d L and a high refractive index layer 180b of the low refractive index layer 180a has an emission wavelength of the light-emitting layer 0.99 lambda (nm), of the low refractive index layer 180a at the emission wavelength lambda
  • the refractive index is set based on the following equation.
  • the layer thickness d L of the low refractive index layer 180a is necessarily larger than the layer thickness d H of the high refractive index layer 180b.
  • the p conductor portion 200 and the n conductor portion 400 are shown as examples in the present embodiment, respectively. As shown in FIGS. 1 and 2, the p conductor portion 200 and the n conductor portion 400 are provided through the multilayer reflective film 180, respectively.
  • the p conductor portion 200 includes a p connection conductor 202 which is a plurality of connection conductors on the p electrode 300 side.
  • the p connection conductor 202 has an end on the substrate 110 side connected to the upper surface 170 c of the transparent conductive layer 170, and the other end connected to the p electrode 300.
  • the n conductor portion 400 includes an n connection conductor 402 that is a plurality of connection conductors on the n electrode 310 side.
  • the n connection conductor 402 has an end on the substrate 110 side connected to the upper surface 140 c of the n-type semiconductor layer 140, and the other end connected to the n electrode 310.
  • the scales of the p connection conductor 202 and the n connection conductor 402 in FIG. 2 are changed, and are greatly different from the dimensions of the p connection conductor 202 and the n connection conductor 402 in the present embodiment.
  • the p connection conductor 202 and the n connection conductor 402 preferably have a diameter in the range of 10 ⁇ m to 50 ⁇ m and a length (depth) in the range of 300 nm to 5 ⁇ m.
  • the n connection conductor 402 has a diameter of 10 ⁇ m and a length (depth) of 500 nm.
  • a plurality of p connection conductors 202 are formed on the entire p electrode 300 as shown in FIG.
  • the current flowing through each p connection conductor 202 is the current used for light emission of the light emitting layer 150.
  • current is uniformly diffused over the entire surface of the p-type semiconductor layer 160 on the surface of the upper surface 160c. This makes it possible to improve light emission unevenness in the light emitting layer 150.
  • a plurality of n connection conductors 402 are also distributed over the entire n electrode 310 as shown in FIG.
  • a current in which unevenness is improved on the upper surface 140c of the n-type semiconductor layer 140 is supplied. This makes it possible to improve light emission unevenness in the light emitting layer 150 and emit light.
  • the p connection conductor 202 and the n connection conductor 402 are obtained by performing metal plating on the wall surface of the through hole formed using dry etching or the like.
  • the p connection conductor 202 and the n connection conductor 402 may be formed as a through hole of the multilayer reflective film 180 filled with a metal, a metal alloy, or a conductive metal oxide. Examples of the material of the metal plating or filling metal include Cu, AuNi, ITO, and IZO.
  • the p connection conductor 202 may be formed simultaneously with the formation of the first conductive layer 301 described later.
  • the n connection conductor 402 may be formed simultaneously with the formation of the first metal layer 311.
  • the structure of the n electrode 310 which is an example of the first electrode in this embodiment will be described.
  • the n-electrode 310 includes a first metal reflection layer 311 stacked on a multilayer reflection film 180 that is an example of a first reflection layer, and a first diffusion prevention layer sequentially from the first metal reflection layer 311 in FIG.
  • the layer 312, the second diffusion barrier layer 313, the third diffusion barrier layer 314, the fourth diffusion barrier layer 315, and the first bonding layer 316 are stacked, and the first bonding layer 316 is removed except for the exposed portion of the first bonding layer 316. It has the 1st adhesion layer 317 laminated so that it may cover.
  • the first metal reflective layer 311 to the first adhesion layer 317 is a metal reflective layer, since the light extraction efficiency can be improved as described later.
  • the first metal reflection layer 311 is configured as a metal reflection layer made of Al (aluminum).
  • a transparent conductive layer made of ITO, IZO or IGO can be used under the first metal reflective layer as in the second electrode described later.
  • the p-electrode 300 includes a first conductive layer 301 stacked on the multilayer reflective film 180 and a second metal reflective layer 302 that is an example of a second reflective layer in order from the first conductive layer 301 in FIG.
  • the first diffusion barrier layer 303, the second diffusion barrier layer 304, the third diffusion barrier layer 305, the fourth diffusion barrier layer 306, and the first bonding layer 307 are stacked, and the first diffusion layer 307 is removed except for the exposed portion.
  • the second metal reflective layer 302 is configured as a metal reflective layer made of Ag (silver).
  • a protective layer 320 is laminated on the p-type semiconductor layer 160 on which the first adhesion layer 308, the first adhesion layer 317, the multilayer reflective film 180, and the transparent conductive layer 170 are not laminated. Yes.
  • the protective layer 320 is made of SiO 2 (silicon oxide) or the like. It is possible to reduce the possibility that external air and moisture enter the light emitting layer 150 of the semiconductor light emitting device 1 and prevent the p-electrode 300 and the n-electrode 310 of the semiconductor light emitting device 1 from peeling off.
  • ⁇ Projection electrode> On the protective layer 320, on the opening of the first electrode 310 and on the opening of the second electrode 300, an alloy layer made of Ti or Ti and W (not shown) and an underback metal layer made of an Au layer (abbreviated as UBM film for short). ) Is applied, and a resist is applied. Next, the resist on the upper portion of the opening is removed, and Au is deposited in a protruding shape as shown in FIG. 4 by a known plating method.
  • the film thickness of Au deposited at this time is preferably 2 ⁇ m to 25 ⁇ m, more preferably 5 ⁇ m to 20 ⁇ m, and further preferably 10 ⁇ m to 15 ⁇ m.
  • the film thickness of Au is less than 2 ⁇ m, the solder containing Sn used for connection during mounting may come into contact with the positive electrode or the negative electrode to cause leakage. Further, when the film thickness of Au is thicker than 25 ⁇ m, the production cost becomes severe.
  • an AuSn alloy film is formed by using a plating method, a vapor deposition method, or a sputtering method, and then the UBM film around the Au deposited in a resist and protrusions is removed by etching.
  • etching of Au can be performed using a mixed liquid of KI and I 2
  • etching of Ti or TiW alloy can be performed using a sulfuric acid solution.
  • FIG. 4 is a diagram illustrating an example of a configuration of a light emitting device in which the semiconductor light emitting element 1 illustrated in FIG. 2 is mounted on the wiring substrate 10.
  • a positive electrode 11 and a negative electrode 12 are formed on one surface of the wiring substrate 10.
  • the p electrode 300 is applied to the positive electrode 11
  • the n electrode 310 is applied to the negative electrode 12, and the solder is respectively applied.
  • Such a connection method of the semiconductor light emitting element 1 to the wiring substrate 10 is generally called flip chip connection.
  • the substrate 110 of the semiconductor light emitting element 1 is placed at a position farther from the light emitting layer 150 when viewed from the wiring substrate 10.
  • FIG. 4 illustrates light in the direction of arrow A toward the p-electrode 300 side, light in the direction of arrow B toward the substrate 110 side, and light in the direction of arrow C toward the side.
  • the insulating multilayer reflective film 180 is provided between the p-electrode 300 or the n-electrode 310 and the laminated semiconductor layer 100.
  • the 200 and n conductor portions 400 it is possible to pass a current necessary for light emission of the light emitting layer 150.
  • the p-electrode 300 the first bonding layer 307, the fourth diffusion prevention layer 306, the third diffusion prevention layer 305, the second diffusion prevention layer 304, the first diffusion prevention layer 303, and the second metal reflection layer 302 are used. And a current flows through the first conductive layer 301, and the p-type semiconductor layer 160 is supplied with a current in which unevenness is suppressed on the surface of the upper surface 160c.
  • the light in the direction of arrow A toward the multilayer reflective film 180 side reaches the multilayer reflective film 180 via the p-type semiconductor layer 160 and the transparent conductive layer 170, and the multilayer reflective film Reflected at 180.
  • the light reflected by the multilayer reflective film 180 is transmitted through the transparent conductive layer 170, the p-type semiconductor layer 160, the light emitting layer 150, the n-type semiconductor layer 140, the base layer 130, the intermediate layer 120, and the substrate 110, and is mainly shown in FIG. 4 is emitted in the direction of arrow D, that is, outside the semiconductor light emitting element 1.
  • the light in the direction of arrow B toward the substrate 110 passes through the n-type semiconductor layer 140, the base layer 130, the intermediate layer 120, and the substrate 110, and is mainly shown in FIG.
  • the light is emitted in the direction indicated by the arrow D, that is, outside the semiconductor light emitting element 1.
  • a part of the light traveling directly from the light emitting layer 150 toward the substrate 110 returns into the semiconductor light emitting device 1. This is because, for example, due to the difference in refractive index between the intermediate layer 120 and the substrate 110, the light from the light emitting layer 150 toward the substrate 110 is easily reflected at the interface between the two.
  • the light returning into the semiconductor light emitting element 1 reaches the multilayer reflective film 180 via the n-type semiconductor layer 140 or via the n-type semiconductor layer 140, the p-type semiconductor layer 160, and the transparent conductive layer 170. Reflected by the multilayer reflective film 180. Then, the light travels in the semiconductor light emitting device 1 and travels again toward the substrate 110, and as a result, the light is emitted in the direction of arrow D shown in FIG.
  • the light in the direction of the arrow C directed to the side reaches the multilayer reflective film 180 via the light emitting layer 150, for example, and is reflected by the multilayer reflective film 180.
  • the light reflected by the multilayer reflective film 180 travels in the semiconductor light emitting element 1 and is emitted in the direction of arrow D shown in FIG. 4, that is, outside the semiconductor light emitting element 1.
  • the light returning into the semiconductor light emitting element 1 as described above is directed not only toward the p-electrode 300 but also toward the n-electrode 310.
  • the multilayer reflective film 180 is also provided on the n-electrode 310 side, and the light returning into the semiconductor light emitting element 1 can be reflected also on the n-electrode 310 side. As a result, the light extraction efficiency of the semiconductor light emitting device 1 is further improved.
  • the p-electrode 300 and the n-electrode 310 each include a metal reflection layer as a single layer, even if not all the light can be reflected by the multilayer reflection film 180, it is reflected by the metal reflection layer, The light can be emitted to the outside of the semiconductor light emitting element 1. As a result, the light extraction efficiency from the semiconductor light emitting device 1 can be further increased.
  • the semiconductor light emitting device 1 is provided with the multilayer reflective film 180, and the light emitted from the light emitting layer 150 to the side opposite to the substrate 110 or reflected at various interfaces is used.
  • Light directed in a direction other than the outside of the element 1 is reflected by the multilayer reflective film 180.
  • the p-electrode 300 and the n-electrode 310 have a metal reflection layer, they are also reflected by this metal reflection layer.
  • FIG. 5 and 6 show a configuration in which the cross-sectional area of the p connection conductor 202 increases as the distance from the junction between the n conductor 400 and the n-type semiconductor layer 140 increases.
  • the present embodiment can improve that the light emitting layer 150 emits light locally in the vicinity of the n-electrode 310. More specific description will be given below.
  • the electrical resistance between the p connection conductor 202 and the n conductor portion 400 increases as the distance from the p connection conductor 202 to the junction between the n conductor portion 400 and the n-type semiconductor layer 140 increases. Will increase. Therefore, there is a possibility that an excessive amount of current flows in the vicinity of the p-connection conductor 202a where current flows more easily, that is, in the vicinity of the n-electrode 310. As a result, a phenomenon that the light emitting layer 150 emits light locally in the vicinity of the n-electrode 310 may occur.
  • the p connection conductors 202a, 202b, and 202c have long distances in this order to the junction between the n conductor portion 400 and the n-type semiconductor layer 140, and the p connection conductors 202a, 202b, and 202c.
  • the area is increased in this order. If the length is the same for the same member, the larger the cross-sectional area, the smaller the electrical resistance. Therefore, the electrical resistance of the p connection conductor 202 itself is in the order of the p connection conductors 202a, 202b, 202c. Get smaller. This can suppress the phenomenon that an excessive current flows in the vicinity of the n-electrode 310 described above.
  • the present embodiment improves the so-called unevenness in the amount of light that the light emitting layer 150 emits locally in the vicinity of the n electrode 310 mainly due to an excessive increase in the amount of current in the vicinity of the n electrode 310.
  • the n conductor portion 400 may be composed of a plurality of n connection conductors 402.
  • the distance from the p connection conductor 202 to the junction between the n conductor portion 400 and the n-type semiconductor layer 140 is the p connection conductor 202 and the n connection conductor 402 and the n type closest to the p connection conductor 202. The distance between the junction with the semiconductor layer 140 is shown.
  • FIG. 7 shows another embodiment that makes it possible to improve unevenness in the amount of light.
  • FIG. 7 shows a configuration in which the number of p connection conductors 202 increases as the distance from the junction between the n conductor 400 and the n-type semiconductor layer 140 increases. That is, the p connection conductors 202a, 202b, 202c, and 202d have a longer distance from the junction between the n conductor 400 and the n-type semiconductor layer 140 in this order.
  • the number of the p connection conductors 202 increases in the order of the p connection conductors 202a, 202b, 202c, and 202d.
  • an excessive increase in the amount of current in the vicinity of the n-electrode 310 can be prevented, and local light emission can be prevented. That is, unevenness in the amount of light can be improved.
  • the cross-sectional area of the p connection conductor 202 changes according to the distance from the junction between the n conductor 400 and the n-type semiconductor layer 140 (see FIGS. 5 and 6), and the p connection conductor 202 It has been stated that the number changes (see FIG. 7). However, both the cross-sectional area of the p connection conductor 202 and the number of the p connection conductors 202 may be changed. That is, the p connection conductor 202 may have a configuration in which the cross-sectional area and number increase as the distance from the junction between the n conductor 400 and the n-type semiconductor layer 140 increases. Furthermore, the structure which makes the material of each p connection conductor 202 different may be sufficient. That is, the p connection conductor 202 may be configured of a material having a lower electrical resistance as the distance from the junction between the n conductor 400 and the n-type semiconductor layer 140 increases.
  • the p connection conductor 202 and the n connection conductor 402 as shown in FIGS. 8 and 9 are formed without performing metal plating on the wall surface of the through hole. That is, the p connection conductor 202 is formed by laminating each layer constituting the p electrode 300 in the through hole, and the n connection conductor 402 is formed by laminating each layer constituting the n electrode 310 in the through hole. .
  • the p connection conductor 202 will be described. As shown in FIG. 8, the first conductive layer 301, the second metal reflective layer 302, the first diffusion prevention layer 303, and the second diffusion, which are the respective layers forming the p electrode 300.
  • the p connection conductor 202 is formed by laminating each of the prevention layer 304, the third diffusion prevention layer 305, the fourth diffusion prevention layer 306, and the first bonding layer 307 in this order in the through hole.
  • the p-electrode 300 and the p-connecting conductor 202 are formed from a plurality of layers that are continuous in the plane direction, the light extraction efficiency is improved.
  • the n connection conductor 402 will be described. As shown in FIG. 9, the first metal reflective layer 311, the first diffusion prevention layer 312, the second diffusion prevention layer 313, and the third layer which are the layers forming the n electrode 310.
  • the n connection conductor 402 is formed by laminating the diffusion preventing layer 314, the fourth diffusion preventing layer 315, and the first bonding layer 316 in this order. As shown in FIG. 9, when the n-electrode 310 and the n-connection conductor 402 are formed from a plurality of layers that are continuous in the plane direction, the light extraction efficiency is improved.
  • the p connection conductor 202 is formed by laminating each layer constituting the p electrode 300 in the through hole, and n layers are laminated by laminating each layer constituting the n electrode 310 in the through hole.
  • the conductor 402 for example, it is conceivable to adopt the configuration of each layer as shown below.
  • the layers of the p electrode 300 and the p connection conductor 202 are the same, and therefore, the p electrode 300 and the p connection conductor 202 will be described below together.
  • the n electrode 310 and the n connection conductor 402 will be described together below.
  • the p-connection conductor 202 and the p-electrode 300 include a first conductive layer 301, a second metal reflective layer 302 that is stacked on the first conductive layer 301, and a first layer that is stacked on the second metal reflective layer 302. It has a diffusion prevention layer 303, a second diffusion prevention layer 304, a third diffusion prevention layer 305, a fourth diffusion prevention layer 306, and a first bonding layer 307.
  • the first conductive layer 301 is laminated on the transparent conductive layer 170 as shown in FIG. Therefore, a material having good adhesion to the transparent conductive layer 170 is preferable.
  • the first conductive layer 301 is directly stacked on the upper surface 160c of the p-type semiconductor layer 160 from which a part has been removed by means such as etching in order to form the n-electrode 310. It is not something.
  • the first conductive layer 301 is formed at a position where the first conductive layer 301 covers almost the entire surface except the peripheral portion of the upper surface 160c of the p-type semiconductor layer 160. ing.
  • the 1st conductive layer 301 is laminated
  • an example of the first conductive layer 301 is a transparent conductive layer.
  • an oxide conductive material that has high light transmittance with respect to light having a wavelength emitted from the light-emitting layer 150 is used as the first conductive layer 301.
  • a part of the oxide containing In is preferable in that both light transmittance and conductivity are superior to other transparent conductive films.
  • IZO indium zinc oxide (In 2 O 3 —ZnO)
  • the IZO constituting the first conductive layer 301 is not subjected to heat treatment and remains in an amorphous state.
  • the film thickness of the first conductive layer 301 is preferably in the range of 1 nm to 50 nm for the reasons described above.
  • the film thickness is less than 1 nm, the adhesion with the transparent conductive layer 170 is deteriorated and the contact resistance may be increased.
  • the film thickness exceeds 50 nm, the light transmittance is lowered and the series resistance is increased, leading to an increase in the forward voltage Vf of the light emitting element.
  • a second metal reflective layer 302 is stacked on the first conductive layer 301.
  • the second metal reflective layer 302 is formed so as to cover the entire region of the first conductive layer 301 when viewed in plan as shown in FIG.
  • the central portion of the second metal reflective layer 302 has a constant film thickness and is substantially flat.
  • the end side of the second metal reflective layer 302 is formed so as to be inclined with respect to the upper surface 180c on the p-electrode side of the multilayer reflective film 180 by gradually decreasing the film thickness.
  • the second metal reflective layer 302 is formed on the first conductive layer 301 and is not formed on the multilayer reflective film 180. That is, the multilayer reflective film 180 and the second metal reflective layer 302 are configured not to directly contact each other. As will be described later, the second metal reflective layer 302 also has a function of supplying power to the p-type semiconductor layer 160 via the first conductive layer 301 and the like. Therefore, the resistance value is low, and the contact resistance with the first conductive layer 301 needs to be kept low.
  • the second metal reflective layer 302 of the present embodiment is made of a metal such as Al (aluminum), Ag (silver), Ni (nickel), Cr (chromium), and an alloy including at least one of them.
  • a metal such as Al (aluminum), Ag (silver), Ni (nickel), Cr (chromium), and an alloy including at least one of them.
  • silver when silver is used as the second metal reflective layer 302, it is preferable because it has high light reflectivity with respect to light in the wavelength range of blue to green emitted from the light emitting layer 150.
  • the material of the first conductive layer 301 is a transparent conductive material such as IZO that has good adhesion to the transparent conductive layer 170 opened to the atmosphere. preferable.
  • the thickness of the second metal reflective layer 302 is preferably in the range of 80 nm to 200 nm. When the film thickness is less than 80 nm, the reflectance by the second metal reflective layer 302 is lowered. On the other hand, when the film thickness exceeds 200 nm, the manufacturing cost of the light-emitting element increases, which is not preferable.
  • a first diffusion preventing layer 303 is laminated on the second metal reflective layer 302.
  • a second diffusion barrier layer 304 is formed on the first diffusion barrier layer 303, a third diffusion barrier layer 305 is disposed on the second diffusion barrier layer 304, and a fourth barrier layer is disposed on the third diffusion barrier layer 305.
  • Diffusion prevention layers 306 are laminated.
  • the first diffusion prevention layer 303, the second diffusion prevention layer 304, and the third diffusion prevention layer 305 are made of a metal (Ag (silver) in this example) that constitutes the second metal reflection layer 302 in a contact state, and the fourth Diffusion of the metal (Pt (platinum) in this example) constituting the diffusion prevention layer 306 is suppressed.
  • the fourth diffusion prevention layer 306 includes a metal (Ta (tantalum) in this example) constituting the third diffusion prevention layer 305 in contact and a metal (Au in this example) constituting the first bonding layer 307. (Gold)) is suppressed.
  • the first diffusion prevention layer 303, the second diffusion prevention layer 304, the third diffusion prevention layer 305, and the fourth diffusion prevention layer 306 are the second metal when viewed in plan as shown in FIG.
  • the reflection layer 302 is formed so as to cover the entire area.
  • the center part of each diffusion prevention layer has a fixed film thickness, and is formed substantially flat.
  • each end side is formed so as to be inclined with respect to the upper surface 180c on the p-electrode side of the multilayer reflective film 180 as the film thickness gradually decreases.
  • Each diffusion prevention layer is formed on the second metal reflective layer 302 and is not formed on the multilayer reflective film 180. That is, the multilayer reflective film 180 and the diffusion preventing layers 303 to 306 are configured not to be in direct contact with each other.
  • the diffusion prevention layers 303 to 306 have an ohmic contact with the layer in contact with each layer and have a low contact resistance with the layer in contact.
  • the diffusion preventing layers 303 to 306 basically do not require a function of transmitting light from the light emitting layer 150, unlike the first conductive layer 301, the diffusion preventing layers 303 to 306 do not need to have light transmittance.
  • Each of the diffusion prevention layers 303 to 306 also has a function of supplying power to the p-type semiconductor layer 160 through the second metal reflective layer 302 and the first conductive layer 301, and thus has excellent conductivity. In addition, it is preferable to use one having a small resistance distribution.
  • Ta is used as the first diffusion prevention layer 303
  • TaN tantalum nitride
  • Ta is used as the second diffusion prevention layer 304
  • Ta is used as the third diffusion prevention layer 305
  • the fourth diffusion prevention layer 306 is used.
  • Pt platinum
  • the thickness of the first diffusion preventing layer 303 is preferably in the range of 20 nm to 200 nm.
  • the barrier property for suppressing diffusion of the second metal reflective layer 302 (Ag (silver) in this example) and the fourth diffusion prevention layer 306 (Pt (platinum) in this example) is not good.
  • Ag and Pt may react.
  • the film thickness exceeds 200 nm, the manufacturing cost of the light emitting element increases.
  • the thickness of the second diffusion preventing layer 304 is preferably in the range of 1 nm to 50 nm.
  • the film thickness is less than 1 nm, the adhesion with the diffusion preventing layers on both sides thereof is deteriorated.
  • the film thickness exceeds 50 nm, the series resistance increases, leading to an increase in the forward voltage Vf of the light emitting element.
  • the thickness of the third diffusion preventing layer 305 is preferably in the range of 20 nm to 200 nm.
  • the adhesion between the second diffusion preventing layer 304 and the fourth diffusion preventing layer 306 is deteriorated.
  • the barrier property for suppressing diffusion of the second metal reflective layer 302 (in this example, Ag (silver)) and the fourth diffusion prevention layer 306 (in this example, Pt (platinum)) is insufficient, and in this example, Ag and Pt may react.
  • the film thickness exceeds 200 nm the manufacturing cost of the light emitting element increases.
  • the film thickness of the fourth diffusion preventing layer 306 is preferably in the range of 50 nm to 200 nm.
  • the third diffusion prevention layer 305 for example, Ta
  • the second bonding layer 307 for example, Au
  • the film thickness exceeds 200 nm, the manufacturing cost of the light emitting element is not good.
  • a first bonding layer 307 is laminated on the upper surface of the fourth diffusion prevention layer 306 so as to cover the fourth diffusion prevention layer 306.
  • the first bonding layer 307 is formed so as to cover the entire region of the fourth diffusion prevention layer 306 when viewed in plan as shown in FIG. 1.
  • the central portion of the first bonding layer 307 has a constant thickness and is substantially flat, while the end portion of the first bonding layer 307 has a thickness that is gradually reduced. It is formed to be inclined with respect to the upper surface 180c on the p-electrode side.
  • the first bonding layer 307 includes at least one metal layer so as to be in contact with the innermost side, that is, the fourth diffusion prevention layer 306 and the like.
  • Au gold
  • the outermost metal layer that is the outermost layer.
  • a single layer film of Au (gold) is used as the first bonding layer 307.
  • the thickness of the first bonding layer 307 is preferably in the range of 100 nm to 2 ⁇ m. When the film thickness is less than 100 nm, the resistance as the first bonding layer 307 increases. In addition, when the film thickness exceeds 2 ⁇ m, the manufacturing cost of the light emitting element increases.
  • a first adhesion layer 308 is laminated on the upper surface and side surfaces of the first bonding layer 307 so as to cover the first bonding layer 307 except for a part thereof.
  • the first adhesion layer 308 is formed so as to cover a region excluding the exposed portion of the first bonding layer 307 when viewed in plan.
  • the central portion of the first adhesion layer 308 has a certain thickness and is formed almost flat.
  • the end portion side of the first adhesion layer 308 is formed to be inclined with respect to the upper surface 180 c of the multilayer reflective film 180 on the p-electrode side.
  • the end portion on the side surface side of the first adhesion layer 308 is provided so as to be in contact with the upper surface 180 c on the p-electrode side of the multilayer reflective film 180.
  • the first adhesion layer 308 is provided to improve the physical adhesion between the first bonding layer 307 made of Au (gold) and the protective layer 320.
  • the first adhesion layer 308 is made of Ta (tantalum).
  • the thickness of the first adhesion layer 308 is preferably in the range of 5 nm to 20 nm. When the film thickness is less than 5 nm, the adhesion between the first bonding layer 307 and the protective layer 320 is deteriorated. On the other hand, when the film thickness exceeds 20 nm, the working time in the etching process becomes long, and the manufacturing cost of the light emitting element increases.
  • the n-electrode 310 includes a first metal reflection layer 311, a first diffusion prevention layer 312, a second diffusion prevention layer 313, a third diffusion prevention layer 314, and a first layer that are stacked on the first metal reflection layer 311.
  • 4 has a first diffusion layer 315, a first bonding layer 316, and a first adhesion layer 317 stacked on the first bonding layer 316 except for the exposed portion of the first bonding layer 316 described above.
  • the first metal reflection layer 311 is laminated on the n-type semiconductor layer 140 as shown in FIG. 9. Therefore, a material with good adhesion to the n-type semiconductor layer 140 is preferable.
  • the first metal reflective layer 311 is formed so as to cover almost the entire area of the upper surface 140c of the n-type semiconductor layer 140 as shown in FIG.
  • the central portion of the first metal reflective layer 311 has a constant film thickness and is substantially flat.
  • the end portion side of the first metal reflective layer 311 is formed so as to be inclined with respect to the upper surface 180d of the multilayer reflective film 180 on the n-electrode side by gradually decreasing the film thickness. And since the 1st metal reflective layer 311 is laminated
  • FIG. 1st metal reflective layer 311 is laminated
  • the first metal reflective layer 311 of the present embodiment is made of a metal such as Al (aluminum), Ag (silver), Ni (nickel), and an alloy including at least one of them. As will be described later, since the first metal reflective layer 311 also has a function of supplying power to the n-type semiconductor layer 140, the resistance value is preferably low.
  • the thickness of the first metal reflective layer 311 is preferably in the range of 80 nm to 200 nm. When the film thickness is less than 80 nm, the reflectance as the reflective layer is lowered. In addition, when the film thickness exceeds 200 nm, the manufacturing cost of the light emitting element becomes high.
  • the diffusion prevention layers 312 to 315, the first bonding layer 316, and the first adhesion layer 317 of the n-electrode 310 have the same structure as the diffusion prevention layers 303 to 306 and the first bonding layer 307 of the p-electrode 300. Since the structure of each of the first adhesion layers 308 is the same as that of the first adhesive layer 308, refer to the description of the n-electrode 310 for the description of each structure.
  • the p-connection conductor 202 and the n-connection conductor 402 are provided by forming a through hole.
  • the present invention should not be construed as being limited thereto.
  • the cylindrical p-connection conductor 202 and the n-connection conductor 402 are formed before the multilayer reflective film 180 is laminated, or by embedding a metal member such as copper after the multilayer reflective film 180 is laminated, p
  • the connection conductor 202 and the n connection conductor 402 may be formed.
  • the p connection conductor 202 and the n connection conductor 402 may have the same configuration except for the first conductive layer 301, the second metal reflection layer 302, and the first metal reflection layer 311 or may have different configurations. Good. Further, the shape of the p connection conductor 202 and the n connection conductor 402 is not limited to a cylinder, and may be a polygonal column including a triangle.
  • FIG. 10 is a diagram illustrating an example of a configuration of a light emitting device 30 (also referred to as a light emitting chip 30 or a lamp 30) including the semiconductor light emitting element 1 illustrated in FIG.
  • FIG. 10A shows a top view of the light emitting chip 30, and
  • FIG. 10B shows an XB-XB cross-sectional view of FIG. 10A.
  • the light emitting chip 30 includes a housing 31 having a recess 31a formed on one side, a first lead portion 32 and a second lead portion 33 made of a lead frame formed on the housing 31, and a bottom surface of the recess 31a.
  • the semiconductor light emitting device 1 is mounted, and a sealing portion 34 is provided so as to cover the recess 31a.
  • description of the sealing part 34 is abbreviate
  • the casing 31 as an example of the base is formed by injection molding a white thermoplastic resin on a metal lead part including the first lead part 32 and the second lead part 33.
  • the first lead portion 32 and the second lead portion 33 are metal plates having a thickness of about 0.1 to 0.5 mm, and are based on, for example, an iron / copper alloy as a metal having excellent workability and thermal conductivity. On top of that, nickel, titanium, gold, silver or the like is laminated as several ⁇ m as a plating layer. In the present embodiment, a part of the first lead portion 32 and the second lead portion 33 is exposed on the bottom surface of the recess 31a. Further, one end portions of the first lead portion 32 and the second lead portion 33 are exposed to the outside of the housing 31 and are bent from the outer wall surface of the housing 31 to the back surface side. In the present embodiment, the first lead portion 32 functions as the first wiring, and the second lead portion 33 functions as the second wiring.
  • the semiconductor light emitting element 1 is attached to the recess 31a across the first lead portion 32 and the second lead portion 33.
  • the sealing portion 34 is made of a transparent resin having a high light transmittance and a high refractive index at wavelengths in the visible region.
  • a transparent resin having a high light transmittance and a high refractive index at wavelengths in the visible region.
  • the resin that satisfies the characteristics of high heat resistance, weather resistance, and mechanical strength constituting the sealing portion 34 for example, an epoxy resin or a silicon resin can be used.
  • the transparent resin constituting the sealing portion 34 contains a phosphor that converts part of the light emitted from the semiconductor light emitting element 1 into green light and red light. Instead of such a phosphor, a phosphor that converts part of blue light into yellow light or a phosphor that converts part of blue light into yellow light and red light may be included. Good.
  • the p-electrode 300 (first electrode) is provided on the first lead portion 32 as an example of the positive electrode in a state where the top and bottom of the semiconductor light emitting element 1 shown in FIG. 2 bonding layer 307) and n electrode 310 (first electrode) are electrically connected to each of second lead portion 33 as an example of a negative electrode using solder and mechanically fixed.
  • a connection method of the semiconductor light emitting element 1 is generally called flip chip connection.
  • the semiconductor light emitting device 1 having excellent light emission characteristics is provided.
  • an electronic device driven by a battery such as a backlight, a mobile phone, a display, a game machine, and an illumination
  • an excellent product including the semiconductor light emitting element 1 having excellent light emission characteristics can be provided, which is preferable.
  • the configuration of the light-emitting chip 30 including the semiconductor light-emitting element 1 is not limited to that shown in FIG. 10, and for example, a package configuration called a shell type may be adopted.
  • Example 1 As shown below, a group III nitride semiconductor light-emitting device having a light-emitting device portion including a gallium nitride-based compound semiconductor was produced.
  • n-contact layer made of GaN with a thickness of 3 ⁇ m
  • n-cladding layer with a thickness of 13 nm made of Si-doped (concentration 1 ⁇ 10 18 / cm 3 ) In 0.1 Ga 0.9 N
  • the n-type semiconductor layer 140 is composed of layers), and a 16 nm thick barrier layer made of GaN and a 2.5 nm thick well layer made of In 0.2 Ga 0.8 N are alternately stacked six times.
  • a transparent conductive layer (translucent positive electrode; first conductive layer) made of IZO at a predetermined position on the p-contact layer of the laminated semiconductor layer (epitaxial layer) 100 using a known photolithography technique and lift-off technique. 170 was formed. Further, the upper surface 140c of the n contact layer in the region where the n electrode 310 is to be formed was exposed in a semicircular shape by a known photolithography technique and reactive ion etching technique. Subsequently, a multilayer reflective film 180 was formed as shown in FIG.
  • the multilayer reflective film 180 uses six layers of SiO 2 having a thickness of 67 nm as the low refractive index layer (first refractive index layer) 180a and TiO 2 having a thickness of 37 nm as the high refractive index layer (second refractive index layer) 180b. By sandwiching five high-refractive index layers 180b between the low-refractive index layers 180a, a total of 11 layers was formed.
  • a plurality of through holes were formed in the multilayer reflective film 180 in the region where the p-electrode 300 and the n-electrode 310 were provided using a known photolithography technique and etching technique as shown in FIG.
  • the diameter of the through hole was 10 ⁇ m.
  • the p conductor portion 200 and the first conductive layer 301 are formed using IZO in regions where the p electrode 300 and the n electrode 310 are provided.
  • an IZO film (film thickness 10 nm) under the n conductor portion 400 and the first metal reflective layer 311 (IZO / Ag laminated structure) were simultaneously formed.
  • the common electrode material constituting the p-electrode 300 and the n-electrode 310 employs a method of forming a film at the same time.
  • the upper layer of the first metal reflective layer 311 and the second metal reflective layer 302 are made of Ag with a thickness of 100 nm
  • the first diffusion prevention layers 303 and 312 are made of Ta with a thickness of 40 nm
  • the second diffusion The prevention layers 304 and 313 are made of 20 nm thick TaN
  • the third diffusion prevention layers 305 and 314 are made of 100 nm thick Ti
  • the fourth diffusion prevention layers 306 and 315 are made of 100 nm thick Pt.
  • the first bonding layers 307 and 316 are formed of Au having a thickness of 500 nm
  • the first adhesion layers 308 and 317 are sequentially formed of Ta having a thickness of 10 nm.
  • IZO / Ag / Ta / TaN A second electrode 300 and a first electrode 310 having a / Ti / Pt / Au / Ta structure were formed.
  • a protective film 320 made of SiO 2 was formed and etched by a known photolithography technique and reactive etching technique to expose part of the first bonding layers 307 and 316 in a circle having a diameter of 90 ⁇ m.
  • a resist is formed in addition to the exposed portions of the first bonding layers 307 and 316, and Au is grown on the exposed portions by 13 ⁇ m by a known electrolytic plating method.
  • 2 ⁇ m of AuSn was formed by vapor deposition.
  • the resist and TiW around the protruding electrode were removed, and the first protruding electrode 21 and the second protruding electrode 20 as shown in FIG. 2 were formed.
  • the sapphire substrate was polished and separated to obtain a 350 ⁇ m ⁇ 350 ⁇ m light emitting chip.
  • the light emitting chip is turned over on the submount 10 using the AlN substrate, and the positive electrode 11 and the negative electrode 12 on the submount 10, the second protruding electrode 20 and the first protruding electrode 21 of the semiconductor light emitting element are arranged.
  • the semiconductor light emitting element and the submount 10 are aligned so as to correspond to each other, and then the semiconductor light emitting element is pressed (crimped) against the submount 10 while being heated to 300 ° C., and the positive electrode 11 and the negative electrode 12 are The second protruding electrode 20 and the first protruding electrode 21 were electrically connected to each other.
  • the submount 10 mounted with the semiconductor light emitting element was placed on the TO 18 and connected by a wire.
  • the light emission wavelength was 452 nm and the light emission output was 28.3 mW when the forward voltage Vf was 3.14 V (current 20 mA).
  • Example 2 A semiconductor light emitting device is manufactured in the same manner as in Example 1 except that the first protruding electrode 21 and the second protruding electrode 20 are not formed and a solder ball is attached as a connector to the AlN submount and connected to the light emitting chip. did.
  • Table 1 shows the LED characteristics of the light-emitting chip obtained in Example 2.
  • Example 3 A semiconductor light emitting device was manufactured in the same manner as in Example 1 except that the pattern of the p connection conductor 202 was formed in the predetermined pattern shown in FIG.
  • the LED characteristics of the light-emitting chip obtained in Example 3 are shown in Table 1. Note that three types of through holes (diameters 10 ⁇ m, 30 ⁇ m, and 50 ⁇ m) having different diameters were formed in the p connection conductor 202, and a through hole having a diameter of 10 ⁇ m was formed in the n connection conductor 402.
  • Example 4 A semiconductor light emitting device was manufactured in the same manner as in Example 1 except that the pattern of the p connection conductor 202 was formed in the predetermined pattern shown in FIG. The LED characteristics of the light-emitting chip obtained in Example 4 are shown in Table 1. In the p connection conductor 202 and the n connection conductor 402, a through hole having a diameter of 10 ⁇ m was formed.
  • Example 2 A semiconductor light emitting device was manufactured in the same manner as in Example 1 except that the multilayer reflective layer 180, the p conductor portion 200, and the n conductor portion 400 were not formed.
  • Table 1 shows the LED characteristics of the light-emitting chips obtained in the comparative examples.
  • the forward drive voltage Vf is approximately the same level as in the comparative example, but the light emission output Po is high.
  • the semiconductor light-emitting device of the present invention can provide a light-emitting device chip that is remarkably improved in terms of light extraction efficiency.
  • SYMBOLS 1 Semiconductor light-emitting device, 20 ... 2nd protrusion electrode, 21 ... 1st protrusion electrode, 100 ... Laminated semiconductor layer, 110 ... Substrate, 120 ... Intermediate layer, 130 ... Underlayer, 140 ... N-type semiconductor layer, 140c ... Top surface , 150 ... light emitting layer, 160 ... p-type semiconductor layer, 170 ... transparent conductive layer, 170c ... upper surface, 180 ... multilayer reflective film, 180a ... low refractive index layer, 180b ... high refractive index layer, 180c ... p electrode side upper surface , 180d ... n electrode side upper surface, 200 ... p conductor portion, 202 ... p connection conductor, 300 ... p electrode, 310 ... n electrode, 400 ... n conductor portion, 402 ... n connection conductor

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