TW201125071A - Process for manufacturing semiconductor device - Google Patents

Process for manufacturing semiconductor device Download PDF

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Publication number
TW201125071A
TW201125071A TW099133059A TW99133059A TW201125071A TW 201125071 A TW201125071 A TW 201125071A TW 099133059 A TW099133059 A TW 099133059A TW 99133059 A TW99133059 A TW 99133059A TW 201125071 A TW201125071 A TW 201125071A
Authority
TW
Taiwan
Prior art keywords
plasma
film
oxide film
manufacturing
semiconductor device
Prior art date
Application number
TW099133059A
Other languages
English (en)
Chinese (zh)
Inventor
Yoshihiro Sato
Toshihiko Shiozawa
Tatsuo Nishita
Yoshihiro Hirota
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW201125071A publication Critical patent/TW201125071A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0181—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Element Separation (AREA)
  • Formation Of Insulating Films (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
TW099133059A 2009-09-30 2010-09-29 Process for manufacturing semiconductor device TW201125071A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009227638 2009-09-30
JP2010207773A JP2011097029A (ja) 2009-09-30 2010-09-16 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
TW201125071A true TW201125071A (en) 2011-07-16

Family

ID=43826242

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099133059A TW201125071A (en) 2009-09-30 2010-09-29 Process for manufacturing semiconductor device

Country Status (5)

Country Link
US (1) US20120184107A1 (https=)
JP (1) JP2011097029A (https=)
KR (1) KR101380094B1 (https=)
TW (1) TW201125071A (https=)
WO (1) WO2011040426A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI797656B (zh) * 2020-06-29 2023-04-01 美商應用材料股份有限公司 化學機械拋光系統、蒸汽產生組件以及用於拋光的電腦程式產品

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JP5981206B2 (ja) * 2012-04-20 2016-08-31 株式会社東芝 半導体装置の製造方法および半導体製造装置
CN103258732B (zh) * 2013-05-07 2016-08-24 上海华力微电子有限公司 防止硅衬底表面损伤的方法
US9379132B2 (en) * 2014-10-24 2016-06-28 Sandisk Technologies Inc. NAND memory strings and methods of fabrication thereof
US20160172190A1 (en) * 2014-12-15 2016-06-16 United Microelectronics Corp. Gate oxide formation process
JP2016134614A (ja) * 2015-01-22 2016-07-25 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
WO2017171488A1 (ko) * 2016-03-31 2017-10-05 주식회사 엘지화학 배리어 필름의 제조 방법
EP3291008A1 (en) * 2016-09-06 2018-03-07 ASML Netherlands B.V. Method and apparatus to monitor a process apparatus
US10971357B2 (en) * 2018-10-04 2021-04-06 Applied Materials, Inc. Thin film treatment process
CN111627810B (zh) * 2020-06-05 2022-10-11 合肥晶合集成电路股份有限公司 一种半导体结构及其制造方法
KR102461496B1 (ko) * 2021-06-03 2022-11-03 주식회사 기가레인 기판 배치 유닛
KR102497494B1 (ko) * 2021-06-03 2023-02-08 주식회사 기가레인 기판 배치 유닛
CN116759325B (zh) * 2023-08-23 2023-11-03 江苏卓胜微电子股份有限公司 用于监控离子注入剂量的阻值监控方法

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JP3505493B2 (ja) * 1999-09-16 2004-03-08 松下電器産業株式会社 半導体装置の製造方法
JP2004153037A (ja) * 2002-10-31 2004-05-27 Renesas Technology Corp 半導体装置の製造方法
JP2005072358A (ja) * 2003-08-26 2005-03-17 Seiko Epson Corp 半導体装置の製造方法
TW200629421A (en) * 2005-01-12 2006-08-16 Sanyo Electric Co Method of producing semiconductor device
JP4989076B2 (ja) * 2005-01-12 2012-08-01 オンセミコンダクター・トレーディング・リミテッド 半導体装置の製造方法
JP4509864B2 (ja) * 2005-05-30 2010-07-21 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置
US7799649B2 (en) * 2006-04-13 2010-09-21 Texas Instruments Incorporated Method for forming multi gate devices using a silicon oxide masking layer
JP2008053535A (ja) * 2006-08-25 2008-03-06 Toshiba Corp 半導体装置の製造方法及び不揮発性記憶装置の製造方法
JPWO2008026531A1 (ja) * 2006-08-28 2010-01-21 国立大学法人名古屋大学 プラズマ酸化処理方法
JP5229711B2 (ja) * 2006-12-25 2013-07-03 国立大学法人名古屋大学 パターン形成方法、および半導体装置の製造方法
JP5029089B2 (ja) * 2007-03-26 2012-09-19 東京エレクトロン株式会社 プラズマ処理装置用の載置台及びプラズマ処理装置
WO2009093760A1 (ja) * 2008-01-24 2009-07-30 Tokyo Electron Limited シリコン酸化膜の形成方法、記憶媒体、および、プラズマ処理装置
WO2009099252A1 (ja) * 2008-02-08 2009-08-13 Tokyo Electron Limited 絶縁膜のプラズマ改質処理方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI797656B (zh) * 2020-06-29 2023-04-01 美商應用材料股份有限公司 化學機械拋光系統、蒸汽產生組件以及用於拋光的電腦程式產品
US11833637B2 (en) 2020-06-29 2023-12-05 Applied Materials, Inc. Control of steam generation for chemical mechanical polishing
TWI854501B (zh) * 2020-06-29 2024-09-01 美商應用材料股份有限公司 化學機械拋光系統、蒸汽產生組件以及用於拋光的電腦程式產品
TWI911834B (zh) * 2020-06-29 2026-01-11 美商應用材料股份有限公司 化學機械拋光系統、蒸汽產生組件以及用於拋光的電腦程式產品

Also Published As

Publication number Publication date
KR20120069754A (ko) 2012-06-28
JP2011097029A (ja) 2011-05-12
KR101380094B1 (ko) 2014-04-01
US20120184107A1 (en) 2012-07-19
WO2011040426A1 (ja) 2011-04-07

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