TW201036216A - Method for patterning a semiconductor surface, and semiconductor chip - Google Patents
Method for patterning a semiconductor surface, and semiconductor chip Download PDFInfo
- Publication number
- TW201036216A TW201036216A TW099103149A TW99103149A TW201036216A TW 201036216 A TW201036216 A TW 201036216A TW 099103149 A TW099103149 A TW 099103149A TW 99103149 A TW99103149 A TW 99103149A TW 201036216 A TW201036216 A TW 201036216A
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor
- wafer
- semiconductor wafer
- photoresist
- patterning
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 196
- 238000000034 method Methods 0.000 title claims abstract description 92
- 238000000059 patterning Methods 0.000 title claims abstract description 28
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 59
- 239000000463 material Substances 0.000 claims description 47
- 150000001875 compounds Chemical class 0.000 claims description 28
- 230000005855 radiation Effects 0.000 claims description 24
- 230000002093 peripheral effect Effects 0.000 claims description 22
- 239000000203 mixture Substances 0.000 claims description 9
- 150000004767 nitrides Chemical class 0.000 claims description 6
- 238000003486 chemical etching Methods 0.000 claims description 3
- 238000003631 wet chemical etching Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 158
- 230000000630 rising effect Effects 0.000 description 36
- 238000005530 etching Methods 0.000 description 17
- 230000005670 electromagnetic radiation Effects 0.000 description 10
- 239000013078 crystal Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000000470 constituent Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- -1 nitride compound Chemical class 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004049 embossing Methods 0.000 description 2
- 229910052747 lanthanoid Inorganic materials 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- 241000238631 Hexapoda Species 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 241000220317 Rosa Species 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000000747 cardiac effect Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 238000009774 resonance method Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102009008223A DE102009008223A1 (de) | 2009-02-10 | 2009-02-10 | Verfahren zur Strukturierung einer Halbleiteroberfläche und Halbleiterchip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201036216A true TW201036216A (en) | 2010-10-01 |
Family
ID=42112195
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099103149A TW201036216A (en) | 2009-02-10 | 2010-02-03 | Method for patterning a semiconductor surface, and semiconductor chip |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20120032306A1 (und) |
| KR (1) | KR20110115166A (und) |
| CN (1) | CN102308396A (und) |
| DE (1) | DE102009008223A1 (und) |
| TW (1) | TW201036216A (und) |
| WO (1) | WO2010091936A1 (und) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102010020162A1 (de) * | 2010-05-11 | 2011-11-17 | Osram Opto Semiconductors Gmbh | Verfahren zur Strukturierung eines Strahlungsauskoppelelements |
| KR101233768B1 (ko) * | 2010-12-30 | 2013-02-15 | 포항공과대학교 산학협력단 | 나노 임프린트 몰드 제조방법, 이 방법에 의해 제조된 나노 임프린트 몰드를 이용한 발광다이오드 제조방법 및 이 방법에 의해 제조된 발광다이오드 |
| RU2565328C1 (ru) | 2011-08-31 | 2015-10-20 | Асахи Касеи И-Матириалс Корпорейшн | Подложка для оптической системы и полупроводниковое светоизлучающее устройство |
| US10090437B2 (en) | 2013-02-11 | 2018-10-02 | Lumileds Llc | LED having etched light emitting surface for increased light extraction |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW445507B (en) * | 2000-07-20 | 2001-07-11 | United Epitaxy Co Ltd | Roughened interface of light emitting device |
| JP3782357B2 (ja) * | 2002-01-18 | 2006-06-07 | 株式会社東芝 | 半導体発光素子の製造方法 |
| DE10306779A1 (de) | 2002-12-30 | 2004-07-22 | Osram Opto Semiconductors Gmbh | Verfahren zum Aufrauhen einer Oberfläche eines Körpers und optoelektronisches Bauelement |
| EP1526411A1 (en) * | 2003-10-24 | 2005-04-27 | Obducat AB | Apparatus and method for aligning surface |
| JP4124102B2 (ja) * | 2003-11-12 | 2008-07-23 | 松下電工株式会社 | 多重反射防止構造を備えた発光素子とその製造方法 |
| US7419912B2 (en) * | 2004-04-01 | 2008-09-02 | Cree, Inc. | Laser patterning of light emitting devices |
| JP4635507B2 (ja) * | 2004-07-30 | 2011-02-23 | パナソニック電工株式会社 | 発光素子の製造方法 |
| US20070045640A1 (en) * | 2005-08-23 | 2007-03-01 | Erchak Alexei A | Light emitting devices for liquid crystal displays |
| DE102006024423A1 (de) * | 2006-02-15 | 2007-08-16 | Osram Opto Semiconductors Gmbh | Verfahren zum Erzeugen von Strukturen in optoelektronischen Bauelementen und Vorrichtung dazu |
| KR100776240B1 (ko) * | 2006-02-21 | 2007-11-16 | 엘지전자 주식회사 | 임프린트를 이용한 에칭방법과 그에 사용되는 스탬프 |
| EP2060950A4 (en) * | 2006-08-18 | 2014-06-25 | Toppan Printing Co Ltd | METHOD FOR PRODUCING AN ORGINAL PLATE, METHOD FOR PRODUCING A MICRONADEL PATCH, MICRONADEL PATCH AND EXPOSURE DEVICE |
| DE102006043400A1 (de) * | 2006-09-15 | 2008-03-27 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
| DE102007004302A1 (de) * | 2006-09-29 | 2008-04-03 | Osram Opto Semiconductors Gmbh | Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips |
| DE102009023355A1 (de) * | 2009-05-29 | 2010-12-02 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils |
-
2009
- 2009-02-10 DE DE102009008223A patent/DE102009008223A1/de not_active Withdrawn
-
2010
- 2010-01-22 US US13/148,631 patent/US20120032306A1/en not_active Abandoned
- 2010-01-22 KR KR1020117021093A patent/KR20110115166A/ko not_active Application Discontinuation
- 2010-01-22 CN CN2010800070061A patent/CN102308396A/zh active Pending
- 2010-01-22 WO PCT/EP2010/050742 patent/WO2010091936A1/de active Application Filing
- 2010-02-03 TW TW099103149A patent/TW201036216A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US20120032306A1 (en) | 2012-02-09 |
| WO2010091936A1 (de) | 2010-08-19 |
| CN102308396A (zh) | 2012-01-04 |
| KR20110115166A (ko) | 2011-10-20 |
| DE102009008223A1 (de) | 2010-08-12 |
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