KR20110115166A - 반도체 표면을 구조화하는 방법 및 반도체칩 - Google Patents

반도체 표면을 구조화하는 방법 및 반도체칩 Download PDF

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Publication number
KR20110115166A
KR20110115166A KR1020117021093A KR20117021093A KR20110115166A KR 20110115166 A KR20110115166 A KR 20110115166A KR 1020117021093 A KR1020117021093 A KR 1020117021093A KR 20117021093 A KR20117021093 A KR 20117021093A KR 20110115166 A KR20110115166 A KR 20110115166A
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KR
South Korea
Prior art keywords
semiconductor
wafer
semiconductor wafer
photoresist
structuring
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KR1020117021093A
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English (en)
Korean (ko)
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엘마르 바울
베른트 보흠
알렉산더 하인들
패트릭 로드
매티어스 사바틸
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오스람 옵토 세미컨덕터스 게엠베하
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Publication of KR20110115166A publication Critical patent/KR20110115166A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
KR1020117021093A 2009-02-10 2010-01-22 반도체 표면을 구조화하는 방법 및 반도체칩 KR20110115166A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009008223A DE102009008223A1 (de) 2009-02-10 2009-02-10 Verfahren zur Strukturierung einer Halbleiteroberfläche und Halbleiterchip
DE102009008223.9 2009-02-10

Publications (1)

Publication Number Publication Date
KR20110115166A true KR20110115166A (ko) 2011-10-20

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ID=42112195

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117021093A KR20110115166A (ko) 2009-02-10 2010-01-22 반도체 표면을 구조화하는 방법 및 반도체칩

Country Status (6)

Country Link
US (1) US20120032306A1 (und)
KR (1) KR20110115166A (und)
CN (1) CN102308396A (und)
DE (1) DE102009008223A1 (und)
TW (1) TW201036216A (und)
WO (1) WO2010091936A1 (und)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010020162A1 (de) * 2010-05-11 2011-11-17 Osram Opto Semiconductors Gmbh Verfahren zur Strukturierung eines Strahlungsauskoppelelements
KR101233768B1 (ko) * 2010-12-30 2013-02-15 포항공과대학교 산학협력단 나노 임프린트 몰드 제조방법, 이 방법에 의해 제조된 나노 임프린트 몰드를 이용한 발광다이오드 제조방법 및 이 방법에 의해 제조된 발광다이오드
RU2565328C1 (ru) 2011-08-31 2015-10-20 Асахи Касеи И-Матириалс Корпорейшн Подложка для оптической системы и полупроводниковое светоизлучающее устройство
US10090437B2 (en) 2013-02-11 2018-10-02 Lumileds Llc LED having etched light emitting surface for increased light extraction

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW445507B (en) * 2000-07-20 2001-07-11 United Epitaxy Co Ltd Roughened interface of light emitting device
JP3782357B2 (ja) * 2002-01-18 2006-06-07 株式会社東芝 半導体発光素子の製造方法
DE10306779A1 (de) 2002-12-30 2004-07-22 Osram Opto Semiconductors Gmbh Verfahren zum Aufrauhen einer Oberfläche eines Körpers und optoelektronisches Bauelement
EP1526411A1 (en) * 2003-10-24 2005-04-27 Obducat AB Apparatus and method for aligning surface
JP4124102B2 (ja) * 2003-11-12 2008-07-23 松下電工株式会社 多重反射防止構造を備えた発光素子とその製造方法
US7419912B2 (en) * 2004-04-01 2008-09-02 Cree, Inc. Laser patterning of light emitting devices
JP4635507B2 (ja) * 2004-07-30 2011-02-23 パナソニック電工株式会社 発光素子の製造方法
US20070045640A1 (en) * 2005-08-23 2007-03-01 Erchak Alexei A Light emitting devices for liquid crystal displays
DE102006024423A1 (de) * 2006-02-15 2007-08-16 Osram Opto Semiconductors Gmbh Verfahren zum Erzeugen von Strukturen in optoelektronischen Bauelementen und Vorrichtung dazu
KR100776240B1 (ko) * 2006-02-21 2007-11-16 엘지전자 주식회사 임프린트를 이용한 에칭방법과 그에 사용되는 스탬프
EP2060950A4 (en) * 2006-08-18 2014-06-25 Toppan Printing Co Ltd METHOD FOR PRODUCING AN ORGINAL PLATE, METHOD FOR PRODUCING A MICRONADEL PATCH, MICRONADEL PATCH AND EXPOSURE DEVICE
DE102006043400A1 (de) * 2006-09-15 2008-03-27 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102007004302A1 (de) * 2006-09-29 2008-04-03 Osram Opto Semiconductors Gmbh Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips
DE102009023355A1 (de) * 2009-05-29 2010-12-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils

Also Published As

Publication number Publication date
US20120032306A1 (en) 2012-02-09
TW201036216A (en) 2010-10-01
WO2010091936A1 (de) 2010-08-19
CN102308396A (zh) 2012-01-04
DE102009008223A1 (de) 2010-08-12

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