JP5054366B2 - ナノ構造物が形成された基板の製造方法及び発光素子並びにその製造方法 - Google Patents
ナノ構造物が形成された基板の製造方法及び発光素子並びにその製造方法 Download PDFInfo
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- JP5054366B2 JP5054366B2 JP2006338992A JP2006338992A JP5054366B2 JP 5054366 B2 JP5054366 B2 JP 5054366B2 JP 2006338992 A JP2006338992 A JP 2006338992A JP 2006338992 A JP2006338992 A JP 2006338992A JP 5054366 B2 JP5054366 B2 JP 5054366B2
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- 239000000758 substrate Substances 0.000 title claims description 102
- 239000002086 nanomaterial Substances 0.000 title claims description 59
- 238000004519 manufacturing process Methods 0.000 title claims description 47
- 238000000034 method Methods 0.000 claims description 56
- 239000004065 semiconductor Substances 0.000 claims description 48
- 238000005054 agglomeration Methods 0.000 claims description 37
- 230000002776 aggregation Effects 0.000 claims description 35
- 239000010408 film Substances 0.000 claims description 31
- 230000001681 protective effect Effects 0.000 claims description 29
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 25
- 239000010409 thin film Substances 0.000 claims description 20
- 239000002073 nanorod Substances 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 13
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- 229910052681 coesite Inorganic materials 0.000 claims 1
- 229910052906 cristobalite Inorganic materials 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 229910052682 stishovite Inorganic materials 0.000 claims 1
- 229910052905 tridymite Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 88
- 238000000605 extraction Methods 0.000 description 13
- 229910002601 GaN Inorganic materials 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 8
- 239000011241 protective layer Substances 0.000 description 8
- 238000001312 dry etching Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000002105 nanoparticle Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000000609 electron-beam lithography Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Drying Of Semiconductors (AREA)
- Electroluminescent Light Sources (AREA)
Description
引き続き、図4cのように、金属を含む薄膜層を熱処理して、前記保護膜110の上部にそれぞれナノサイズである複数個のアグロメレーション125を形成する。
105、205、305:ナノロッド
110、115: 保護膜
120: 薄膜層
125: アグロメレーション
135: 溝
210: nーGaN層
220、320: 活性層
230: pーGaN層
240、250、350、360:電極
310、330: 半導体層
370: 発光構造物
Claims (12)
- 基板上部に保護膜を形成し、保護膜上部に金属を含む薄膜層を形成する段階と、
前記金属を含む薄膜層を熱処理して、前記保護膜上部にそれぞれナノサイズである複数個のアグロメレーションを形成する段階と、
前記複数個のアグロメレーションをマスクにして前記保護膜をエッチングする段階と、
前記複数個のアグロメレーションを除去し、前記エッチングされた保護膜をマスクにして前記基板上部をエッチングして、前記基板上部に複数個のナノ構造物を形成する段階と、
前記保護膜を除去する段階とからなるナノ構造物が形成された基板の製造方法。 - 前記ナノ構造物は、
ナノロッド、ナノ溝とこれらの混合された構造物のうち一つであることを特徴とする請求項1に記載のナノ構造物が形成された基板の製造方法。 - 前記基板は、
サファイア基板であることを特徴とする請求項1に記載のナノ構造物が形成された基板の製造方法。 - 前記金属を含む薄膜層の熱処理は、
RTPまたは加熱炉を通じて行うことを特徴とする請求項1に記載のナノ構造物が形成された基板の製造方法。 - 前記複数個のアグロメレーションそれぞれの幅は、
それぞれ10nm〜2000nmであることを特徴とする請求項1に記載のナノ構造物が形成された基板の製造方法。 - 前記金属を含む薄膜層の熱処理は、
100℃〜2000℃温度で行うことを特徴とする請求項1に記載のナノ構造物が形成された基板の製造方法。 - 前記保護膜と基板のエッチングは、
RIE工程を通じて行うことを特徴とする請求項1に記載のナノ構造物が形成された基板の製造方法。 - 前記保護膜は、
SiO2またはSiNよりなることを特徴とする請求項1に記載のナノ構造物が形成された基板の製造方法。 - 基板上部に複数個のナノ構造物を形成する段階と、
前記複数個のナノ構造物が形成された基板上部に、第1極性を有する第1半導体層、活性層と前記第1極性と反対の極性を有する第2半導体層よりなる発光構造物を形成する段階と、
前記発光構造物の上部に保持部を形成する段階と、
前記発光構造物から基板を離脱させる段階と、
前記保持部を除去し、前記発光構造物の第1半導体層の下部に第1電極を形成し、前記第2半導体層の上部に第2電極を形成する段階とから構成され、
前記ナノ構造物を形成する段階は、
基板上部に保護膜を形成し、保護膜の上部に金属を含む薄膜層を形成する段階と、
前記金属を含む薄膜層を熱処理して、前記保護膜上部にそれぞれナノサイズである複数個のアグロメレーションを形成する段階と、
前記複数個のアグロメレーションをマスクにして前記保護膜をエッチングする段階と、
前記複数個のアグロメレーションを除去し、前記エッチングされた保護膜をマスクにして前記基板上部をエッチングして、前記基板上部に複数個のナノ構造物を形成する段階と、
前記保護膜を除去する段階とを含む発光素子の製造方法。 - 前記保護膜は、
SiO2またはSiNよりなることを特徴とする請求項9に記載の発光素子の製造方法。 - 前記複数個のアグロメレーションそれぞれの幅は、
それぞれ10nm〜2000nmであることを特徴とする請求項9に記載の発光素子の製造方法。 - 前記ナノ構造物は、
ナノロッド、ナノ溝とこれらの混合された構造物のうち一つであることを特徴とする請求項9に記載の発光素子の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR1020050123861A KR20070063731A (ko) | 2005-12-15 | 2005-12-15 | 나노 패턴이 형성된 기판의 제조방법 및 그 기판을 이용한발광소자 |
KR10-2005-0123861 | 2005-12-15 |
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JP2007168066A JP2007168066A (ja) | 2007-07-05 |
JP5054366B2 true JP5054366B2 (ja) | 2012-10-24 |
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Country Status (5)
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US (1) | US8796698B2 (ja) |
EP (1) | EP1798780B1 (ja) |
JP (1) | JP5054366B2 (ja) |
KR (1) | KR20070063731A (ja) |
CN (1) | CN1983657B (ja) |
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SG140473A1 (en) * | 2006-08-16 | 2008-03-28 | Tinggi Tech Private Ltd | Improvements in external light efficiency of light emitting diodes |
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EP1798780B1 (en) | 2020-10-07 |
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US8796698B2 (en) | 2014-08-05 |
CN1983657A (zh) | 2007-06-20 |
KR20070063731A (ko) | 2007-06-20 |
EP1798780A3 (en) | 2014-06-25 |
EP1798780A2 (en) | 2007-06-20 |
US20070166862A1 (en) | 2007-07-19 |
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