TW201035675A - Method of manufacturing reflective mask blanks for euv lithography - Google Patents
Method of manufacturing reflective mask blanks for euv lithography Download PDFInfo
- Publication number
- TW201035675A TW201035675A TW099102079A TW99102079A TW201035675A TW 201035675 A TW201035675 A TW 201035675A TW 099102079 A TW099102079 A TW 099102079A TW 99102079 A TW99102079 A TW 99102079A TW 201035675 A TW201035675 A TW 201035675A
- Authority
- TW
- Taiwan
- Prior art keywords
- dielectric layer
- layer
- electrostatic chuck
- film
- reflective
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 53
- 238000001900 extreme ultraviolet lithography Methods 0.000 title claims description 34
- 239000000758 substrate Substances 0.000 claims abstract description 158
- 239000011521 glass Substances 0.000 claims abstract description 106
- 229920000620 organic polymer Polymers 0.000 claims abstract description 49
- 239000004020 conductor Substances 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 69
- 238000001179 sorption measurement Methods 0.000 claims description 53
- 238000010521 absorption reaction Methods 0.000 claims description 28
- 238000004544 sputter deposition Methods 0.000 claims description 21
- 229920001721 polyimide Polymers 0.000 claims description 9
- -1 polyethylene terephthalate Polymers 0.000 claims description 7
- 244000126211 Hericium coralloides Species 0.000 claims description 5
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
- 230000003068 static effect Effects 0.000 claims description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims 1
- 239000005977 Ethylene Substances 0.000 claims 1
- 229920006254 polymer film Polymers 0.000 claims 1
- 229920005672 polyolefin resin Polymers 0.000 claims 1
- 230000006378 damage Effects 0.000 abstract description 31
- 239000002245 particle Substances 0.000 abstract description 17
- 239000010410 layer Substances 0.000 description 347
- 239000010408 film Substances 0.000 description 172
- 239000007789 gas Substances 0.000 description 65
- 239000000463 material Substances 0.000 description 33
- 230000015572 biosynthetic process Effects 0.000 description 26
- 238000007689 inspection Methods 0.000 description 23
- 150000001875 compounds Chemical class 0.000 description 17
- 239000000203 mixture Substances 0.000 description 15
- 238000005530 etching Methods 0.000 description 10
- 238000001755 magnetron sputter deposition Methods 0.000 description 9
- 230000003746 surface roughness Effects 0.000 description 9
- 230000007547 defect Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 229910052796 boron Inorganic materials 0.000 description 7
- 238000001659 ion-beam spectroscopy Methods 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 229910052715 tantalum Inorganic materials 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 238000009413 insulation Methods 0.000 description 6
- 239000002120 nanofilm Substances 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000007599 discharging Methods 0.000 description 4
- 230000014759 maintenance of location Effects 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 230000007261 regionalization Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- CXOWYMLTGOFURZ-UHFFFAOYSA-N azanylidynechromium Chemical compound [Cr]#N CXOWYMLTGOFURZ-UHFFFAOYSA-N 0.000 description 3
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- 210000000078 claw Anatomy 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 230000004927 fusion Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910019895 RuSi Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000010410 dusting Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000007687 exposure technique Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 239000002346 layers by function Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 238000001579 optical reflectometry Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229920002239 polyacrylonitrile Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 239000002023 wood Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- 241000282472 Canis lupus familiaris Species 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 241000282320 Panthera leo Species 0.000 description 1
- 241001494479 Pecora Species 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- OLBVUFHMDRJKTK-UHFFFAOYSA-N [N].[O] Chemical compound [N].[O] OLBVUFHMDRJKTK-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052849 andalusite Inorganic materials 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- GPTXWRGISTZRIO-UHFFFAOYSA-N chlorquinaldol Chemical compound ClC1=CC(Cl)=C(O)C2=NC(C)=CC=C21 GPTXWRGISTZRIO-UHFFFAOYSA-N 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 125000000816 ethylene group Chemical group [H]C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000005065 mining Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000399 optical microscopy Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 229920005597 polymer membrane Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 150000003609 titanium compounds Chemical class 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910000500 β-quartz Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
- G03F7/70708—Chucks, e.g. chucking or un-chucking operations or structural details being electrostatic; Electrostatically deformable vacuum chucks
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009016283 | 2009-01-28 | ||
| JP2009271597 | 2009-11-30 | ||
| JP2009282872 | 2009-12-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201035675A true TW201035675A (en) | 2010-10-01 |
Family
ID=42395606
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099102079A TW201035675A (en) | 2009-01-28 | 2010-01-26 | Method of manufacturing reflective mask blanks for euv lithography |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20110266140A1 (ja) |
| JP (1) | JPWO2010087345A1 (ja) |
| KR (1) | KR20110119619A (ja) |
| CN (1) | CN102292807A (ja) |
| TW (1) | TW201035675A (ja) |
| WO (1) | WO2010087345A1 (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI507813B (zh) * | 2011-05-20 | 2015-11-11 | Hermes Microvision Inc | 超紫外光光罩的靜電放電結構 |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE112012000658T5 (de) | 2011-02-04 | 2013-11-07 | Asahi Glass Company, Limited | Substrat mit leitendem Film, Substrat mit Mehrschicht-Reflexionsfilm und Reflexionsmaskenrohling für eine EUV-Lithographie |
| JP5724657B2 (ja) * | 2011-06-14 | 2015-05-27 | 旭硝子株式会社 | ガラス基板保持手段、およびそれを用いたｅｕｖマスクブランクスの製造方法 |
| JP5768731B2 (ja) * | 2012-01-27 | 2015-08-26 | 三菱電機株式会社 | 異物除去装置、異物除去方法 |
| JP2014127630A (ja) | 2012-12-27 | 2014-07-07 | Asahi Glass Co Ltd | Ｅｕｖリソグラフィ用反射型マスクブランクおよびその製造方法 |
| JP2014160752A (ja) | 2013-02-20 | 2014-09-04 | Asahi Glass Co Ltd | Ｅｕｖリソグラフィ用反射型マスクブランクおよび該マスクブランク用反射層付基板 |
| JP6303399B2 (ja) * | 2013-10-28 | 2018-04-04 | 凸版印刷株式会社 | Ｅｕｖ露光装置 |
| CN104637853A (zh) * | 2013-11-14 | 2015-05-20 | 上海华虹宏力半导体制造有限公司 | 硅片的临时键合工艺方法 |
| JP2015176934A (ja) * | 2014-03-13 | 2015-10-05 | 株式会社東芝 | 静電チャッククリーナ、クリーニング方法、および露光装置 |
| US9967975B2 (en) * | 2016-04-29 | 2018-05-08 | Kinsus Interconnect Technology Corp. | Multi-layer circuit board |
| CN107425033B (zh) * | 2017-04-27 | 2019-12-17 | 上海天马微电子有限公司 | 一种显示面板和显示设备 |
| KR102374206B1 (ko) | 2017-12-05 | 2022-03-14 | 삼성전자주식회사 | 반도체 장치 제조 방법 |
| JP7355512B2 (ja) * | 2019-03-28 | 2023-10-03 | 株式会社巴川製紙所 | 溶射用マスキング材、静電チャック装置の製造方法 |
| KR20220038214A (ko) * | 2020-09-18 | 2022-03-28 | 삼성디스플레이 주식회사 | 마스크 수리 장치 및 그것을 이용한 마스크 수리 방법 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4156699B2 (ja) * | 1998-02-16 | 2008-09-24 | 株式会社巴川製紙所 | 静電チャック装置用シートおよび静電チャック装置 |
| JP3484107B2 (ja) * | 1998-08-03 | 2004-01-06 | 株式会社巴川製紙所 | 静電チャック装置 |
| JP4342691B2 (ja) * | 2000-04-24 | 2009-10-14 | 株式会社アルバック | 静電吸着装置及び真空処理装置 |
| JP3979792B2 (ja) * | 2000-05-25 | 2007-09-19 | 株式会社巴川製紙所 | 静電チャック装置用接着シート及び静電チャック装置 |
| JP2005210093A (ja) * | 2003-12-25 | 2005-08-04 | Hoya Corp | 多層反射膜付き基板、露光用反射型マスクブランクス及び露光用反射型マスク、並びにそれらの製造方法 |
| JP2005223185A (ja) * | 2004-02-06 | 2005-08-18 | Toto Ltd | 静電チャックとその製造方法 |
| JP2006267595A (ja) * | 2005-03-24 | 2006-10-05 | Toshiba Corp | マスクブランクスとその製造方法及び使用方法、並びにマスクとその製造方法及び使用方法 |
| JP2008109060A (ja) * | 2005-11-10 | 2008-05-08 | Asahi Glass Co Ltd | Ｅｕｖリソグラフィ用反射型マスクブランクの多層反射膜を成膜する方法、ならびにｅｕｖリソグラフィ用反射型マスクブランクの製造方法 |
| JP4381393B2 (ja) * | 2006-04-28 | 2009-12-09 | 信越化学工業株式会社 | 静電チャック |
| US20080153010A1 (en) * | 2006-11-09 | 2008-06-26 | Asahi Glass Company., Ltd. | Method for depositing reflective multilayer film of reflective mask blank for euv lithography and method for producing reflective mask blank for euv lithography |
| JP2008160009A (ja) * | 2006-12-26 | 2008-07-10 | Tomoegawa Paper Co Ltd | 双極型静電チャック装置 |
| JP2008187006A (ja) * | 2007-01-30 | 2008-08-14 | Tomoegawa Paper Co Ltd | 静電チャック装置 |
| JP4372178B2 (ja) * | 2007-04-27 | 2009-11-25 | 株式会社東芝 | 光反射型マスクと光反射型マスクの作製方法及び半導体装置の製造方法 |
-
2010
- 2010-01-26 JP JP2010548521A patent/JPWO2010087345A1/ja active Pending
- 2010-01-26 TW TW099102079A patent/TW201035675A/zh unknown
- 2010-01-26 KR KR1020117013802A patent/KR20110119619A/ko not_active Application Discontinuation
- 2010-01-26 WO PCT/JP2010/050985 patent/WO2010087345A1/ja active Application Filing
- 2010-01-26 CN CN2010800055644A patent/CN102292807A/zh active Pending
-
2011
- 2011-07-12 US US13/180,611 patent/US20110266140A1/en not_active Abandoned
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI507813B (zh) * | 2011-05-20 | 2015-11-11 | Hermes Microvision Inc | 超紫外光光罩的靜電放電結構 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20110266140A1 (en) | 2011-11-03 |
| KR20110119619A (ko) | 2011-11-02 |
| CN102292807A (zh) | 2011-12-21 |
| JPWO2010087345A1 (ja) | 2012-08-02 |
| WO2010087345A1 (ja) | 2010-08-05 |
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