TW200933289A - Photomask, method of manufacturing the photomask, and method of transferring a pattern - Google Patents

Photomask, method of manufacturing the photomask, and method of transferring a pattern Download PDF

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Publication number
TW200933289A
TW200933289A TW097136430A TW97136430A TW200933289A TW 200933289 A TW200933289 A TW 200933289A TW 097136430 A TW097136430 A TW 097136430A TW 97136430 A TW97136430 A TW 97136430A TW 200933289 A TW200933289 A TW 200933289A
Authority
TW
Taiwan
Prior art keywords
pattern
light
semi
film
reticle
Prior art date
Application number
TW097136430A
Other languages
English (en)
Chinese (zh)
Inventor
Michiaki Sano
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of TW200933289A publication Critical patent/TW200933289A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW097136430A 2007-09-29 2008-09-23 Photomask, method of manufacturing the photomask, and method of transferring a pattern TW200933289A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007256931A JP2009086384A (ja) 2007-09-29 2007-09-29 フォトマスク及びフォトマスクの製造方法、並びにパターン転写方法

Publications (1)

Publication Number Publication Date
TW200933289A true TW200933289A (en) 2009-08-01

Family

ID=40517248

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097136430A TW200933289A (en) 2007-09-29 2008-09-23 Photomask, method of manufacturing the photomask, and method of transferring a pattern

Country Status (4)

Country Link
JP (1) JP2009086384A (https=)
KR (1) KR20090033314A (https=)
CN (1) CN101398612B (https=)
TW (1) TW200933289A (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009086385A (ja) * 2007-09-29 2009-04-23 Hoya Corp フォトマスク及びフォトマスクの製造方法、並びにパターン転写方法
JP4993113B2 (ja) * 2007-11-14 2012-08-08 大日本印刷株式会社 フォトマスク
CN106773345B (zh) 2016-12-20 2019-12-24 惠科股份有限公司 显示面板、显示面板的制程及光罩
KR20190038981A (ko) * 2017-10-01 2019-04-10 주식회사 에스앤에스텍 정전 파괴 방지용 블랭크 마스크 및 포토마스크
TWI710850B (zh) * 2018-03-23 2020-11-21 日商Ｈｏｙａ股份有限公司 光罩、光罩基底、光罩之製造方法、及電子元件之製造方法
CN109143775A (zh) * 2018-08-29 2019-01-04 上海华力集成电路制造有限公司 降低光罩静电放电风险的方法及其得到的光罩图形
CN111736435A (zh) * 2020-07-23 2020-10-02 上海华力微电子有限公司 光刻装置及其曝光方法
CN112711174A (zh) * 2020-12-28 2021-04-27 Tcl华星光电技术有限公司 光罩、阵列基板的制备方法与显示面板

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000131823A (ja) * 1998-10-27 2000-05-12 New Japan Radio Co Ltd 半導体レチクル・マスク
JP2002278048A (ja) * 2001-03-16 2002-09-27 Canon Inc フォトマスク及びカラーフィルタ製造方法
JP4210166B2 (ja) * 2003-06-30 2009-01-14 Ｈｏｙａ株式会社 グレートーンマスクの製造方法
JP4393290B2 (ja) * 2003-06-30 2010-01-06 Ｈｏｙａ株式会社 グレートーンマスクの製造方法及び薄膜トランジスタ基板の製造方法
JP2007093798A (ja) * 2005-09-27 2007-04-12 Sharp Corp フォトマスク及びその製造方法
CN100517075C (zh) * 2006-03-09 2009-07-22 北京京东方光电科技有限公司 一种薄膜晶体管液晶显示器的阵列基板的制作方法
JP2009086383A (ja) * 2007-09-29 2009-04-23 Hoya Corp グレートーンマスク、パターン転写方法、及びグレートーンマスクブランク

Also Published As

Publication number Publication date
KR20090033314A (ko) 2009-04-02
JP2009086384A (ja) 2009-04-23
CN101398612A (zh) 2009-04-01
CN101398612B (zh) 2011-11-23

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