CN101398612B - 光掩膜及光掩膜的制造方法、以及图案转印方法 - Google Patents

光掩膜及光掩膜的制造方法、以及图案转印方法 Download PDF

Info

Publication number
CN101398612B
CN101398612B CN2008101681334A CN200810168133A CN101398612B CN 101398612 B CN101398612 B CN 101398612B CN 2008101681334 A CN2008101681334 A CN 2008101681334A CN 200810168133 A CN200810168133 A CN 200810168133A CN 101398612 B CN101398612 B CN 101398612B
Authority
CN
China
Prior art keywords
light
pattern
mask
semi
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2008101681334A
Other languages
English (en)
Chinese (zh)
Other versions
CN101398612A (zh
Inventor
佐野道明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of CN101398612A publication Critical patent/CN101398612A/zh
Application granted granted Critical
Publication of CN101398612B publication Critical patent/CN101398612B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CN2008101681334A 2007-09-29 2008-09-28 光掩膜及光掩膜的制造方法、以及图案转印方法 Expired - Fee Related CN101398612B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007256931 2007-09-29
JP2007256931A JP2009086384A (ja) 2007-09-29 2007-09-29 フォトマスク及びフォトマスクの製造方法、並びにパターン転写方法
JP2007-256931 2007-09-29

Publications (2)

Publication Number Publication Date
CN101398612A CN101398612A (zh) 2009-04-01
CN101398612B true CN101398612B (zh) 2011-11-23

Family

ID=40517248

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008101681334A Expired - Fee Related CN101398612B (zh) 2007-09-29 2008-09-28 光掩膜及光掩膜的制造方法、以及图案转印方法

Country Status (4)

Country Link
JP (1) JP2009086384A (https=)
KR (1) KR20090033314A (https=)
CN (1) CN101398612B (https=)
TW (1) TW200933289A (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009086385A (ja) * 2007-09-29 2009-04-23 Hoya Corp フォトマスク及びフォトマスクの製造方法、並びにパターン転写方法
JP4993113B2 (ja) * 2007-11-14 2012-08-08 大日本印刷株式会社 フォトマスク
CN106773345B (zh) 2016-12-20 2019-12-24 惠科股份有限公司 显示面板、显示面板的制程及光罩
KR20190038981A (ko) * 2017-10-01 2019-04-10 주식회사 에스앤에스텍 정전 파괴 방지용 블랭크 마스크 및 포토마스크
TWI710850B (zh) * 2018-03-23 2020-11-21 日商Ｈｏｙａ股份有限公司 光罩、光罩基底、光罩之製造方法、及電子元件之製造方法
CN109143775A (zh) * 2018-08-29 2019-01-04 上海华力集成电路制造有限公司 降低光罩静电放电风险的方法及其得到的光罩图形
CN111736435A (zh) * 2020-07-23 2020-10-02 上海华力微电子有限公司 光刻装置及其曝光方法
CN112711174A (zh) * 2020-12-28 2021-04-27 Tcl华星光电技术有限公司 光罩、阵列基板的制备方法与显示面板

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1577084A (zh) * 2003-06-30 2005-02-09 Hoya株式会社 灰调掩模的制造方法
CN101034262A (zh) * 2006-03-09 2007-09-12 京东方科技集团股份有限公司 一种薄膜晶体管液晶显示器的阵列基板的制作方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000131823A (ja) * 1998-10-27 2000-05-12 New Japan Radio Co Ltd 半導体レチクル・マスク
JP2002278048A (ja) * 2001-03-16 2002-09-27 Canon Inc フォトマスク及びカラーフィルタ製造方法
JP4393290B2 (ja) * 2003-06-30 2010-01-06 Ｈｏｙａ株式会社 グレートーンマスクの製造方法及び薄膜トランジスタ基板の製造方法
JP2007093798A (ja) * 2005-09-27 2007-04-12 Sharp Corp フォトマスク及びその製造方法
JP2009086383A (ja) * 2007-09-29 2009-04-23 Hoya Corp グレートーンマスク、パターン転写方法、及びグレートーンマスクブランク

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1577084A (zh) * 2003-06-30 2005-02-09 Hoya株式会社 灰调掩模的制造方法
CN101034262A (zh) * 2006-03-09 2007-09-12 京东方科技集团股份有限公司 一种薄膜晶体管液晶显示器的阵列基板的制作方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JP特开2003-248294A 2003.09.05
JP特开2005-189665A 2005.07.14

Also Published As

Publication number Publication date
KR20090033314A (ko) 2009-04-02
TW200933289A (en) 2009-08-01
JP2009086384A (ja) 2009-04-23
CN101398612A (zh) 2009-04-01

Similar Documents

Publication Publication Date Title
CN101441408B (zh) 光掩膜及光掩膜的制造方法,以及图案转印方法
CN101398612B (zh) 光掩膜及光掩膜的制造方法、以及图案转印方法
JP5079392B2 (ja) Ｔｆｔ−ｌｃｄアレイ基板構造及びその製造方法
JP5244485B2 (ja) フォトマスク及びその製造方法、並びにパターン転写方法
KR100759627B1 (ko) 박막의 패턴닝 방법 및 그것을 이용한 tft 어레이 기판 및그 제조 방법
JP3830593B2 (ja) 液晶表示装置の製造方法
JP5036328B2 (ja) グレートーンマスク及びパターン転写方法
CN101339362B (zh) 灰阶掩模的缺陷修正方法、灰阶掩模及其制造方法
CN103890657A (zh) 大型相移掩模及大型相移掩模的制造方法
JP2005257712A (ja) グレートーンマスク及びその製造方法
CN107045237B (zh) 阵列基板及其制造方法
JP2009086383A (ja) グレートーンマスク、パターン転写方法、及びグレートーンマスクブランク
CN108873509A (zh) 形成像素结构的方法
TWI424507B (zh) 薄膜電晶體陣列基板的製造方法
US8153337B2 (en) Photomask and method for fabricating source/drain electrode of thin film transistor
TWI710850B (zh) 光罩、光罩基底、光罩之製造方法、及電子元件之製造方法
JP2009086385A (ja) フォトマスク及びフォトマスクの製造方法、並びにパターン転写方法
KR20080045669A (ko) 인쇄 패턴에 의한 패턴 형성 방법
CN106601669A (zh) 一种薄膜晶体管阵列基板的制造方法
JP4834206B2 (ja) グレートーンマスクの製造方法及び被処理体の製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20111123

Termination date: 20130928