201011456 六、發明說明： 【發明所屬之技術領域】 本發明係有關用於製造攝像元件、液晶顯示裝置 (Liquid Crystal Display.以下稱爲 LCD)及 f @ 胃 7 之多階調光罩及圖案轉印方法。 【先前技術】 現今’於LCD領域中’薄膜電晶體液晶顯示裝置（Thin Film Transistor Liquid Crystal Display ：以下稱爲 TFT-LCD ) 因有較CRT (陰極射線管）更易於形成薄型、消費電力更 低之優點而急速地商品化。TFT-LCD具有：將了ft排列於 各像素（排列成矩陣狀）之構造的TFT基板、及對應各像 素而排列紅、綠及藍像素圖案的彩色濾光片，在液晶層的 居中存在下重合的槪略構造。在TFT-LCD中，製程多，僅 TFT基板便使用5片~6片光罩來製造。於此種狀況下，在 1999年5月出刊之「FPD情報月刊（FPD Intelligence )」 第31~35頁中提出使用4片光罩來進行TFT基板之製造的 方法。 此方法係藉由使用具有遮光部、透光部及半透光部的 多階調光罩（以下稱爲光罩），減少使用的遮罩片數者。 在此，半透光部，係指在使用遮罩將圖案轉印至被轉印體 時，使透過的曝光光線的透過量減少既定量，控制被轉印 體上光阻膜顯影後的殘膜量，該種同時具備遮光部、透光 部、與半透光部的光罩稱爲多階調光罩。 201011456 【發明內容】 近年來，尤其是隨著TFT通道部圖案的微細化而使多 階調光罩中越來越微細的圖案變得必要。例如，能使用如 下的多階調光罩：形成對應TFT中之源極、汲極的部分以 作爲遮光部，形成相當於位在該源極、汲極之間的通道部 的部分，以作爲半透光部（參照第3圖（b))。在如此作 成的多階調光罩TFT通道部的圖案中之相當於通道寬度 (channel length)的部分，即遮光膜間之半透光部寬度爲 7以m左右的情況中，使用此遮罩時的曝光機中之由該半透 光部之透過光所造成之被轉印體上之光強度分布成爲如第 12圖所示。又，可使用例如包含g線（波長43 6nm)及i 線（波長365nm)的350nm〜450nm的波長區域的光源作爲 曝光機的曝光光源。根據此光強度分布，被轉印體上的阻 劑膜被曝光，此後經過阻劑的顯影製程而形成阻劑圖案。 因此，使由此灰階遮罩（graytone mask)的半透光部所造 φ 成的光強度分布反映至所形成的阻劑圖案的形狀。 另一方面，在半透光部的圖案形狀進一步微細化，遮 光膜間的半透光部寬度成爲例如3.6/zm的情況下，使用此 遮罩時的曝光機中由該半透光部的透過光所造成之光強度 分布會成爲如第13圖所示。如可由第13圖得知，此光強 度分布曲線的形狀有別於第12圖所示之光強度分布曲線 的形狀的情況，在波峰（peak)附近幾乎沒有平坦區域（plate zone ) 201011456 一般而言，由於在與遮光部交界附近的半透光部會產 生因應曝光機的解像度之光繞射，所以光強度分布曲線會 描繪出既定的傾斜。於是，一旦半透光部的尺寸（寬度） 變成例如6//m以下，便會成爲如第13圖所示的幾乎無平 坦區域的光強度分布曲線。認爲這是因爲相對於曝光光線 波長及曝光機的解像度，繞射的影響變大至無法忽視程度 之緣故。因此，一旦使用如此作成的遮罩進行曝光，則被 轉印體上的阻劑膜會被曝光，在經歷顯影製程所形成的阻 劑圖案上，會被轉印幾乎無平坦區域的常態分布型的形 狀。一般而言，希望所製得之阻劑圖案的剖面係相對於基 板垂直地聳立，而上述阻劑圖案會在邊緣（edge )形成錐 形狀（taper )的剖面，相較於通道寬度大的習知者，錐形 角有變小（傾斜躺下的方向）的傾向。一旦使用具有此種 錐形狀剖面形狀、幾乎無平坦區域的常態分布型形狀的阻 劑圖案，進行被轉印體的蝕刻，則藉由鈾刻所形成之被加 工層的圖案尺寸變化大，圖案的尺寸控制非常困難，有線 寬精度劣化之虞。 本發明係鑑於此點而作成者，其目的爲提供：即使半 透光部圖案的形狀微細化，亦能使被轉印體上的阻劑圖案 成爲容易控制其後製程之被轉印體的加工製程的尺寸者， 使線寬精度提高的多階調光罩及圖案轉印方法。 本發明之第1構成的多階調光罩，係在透明基板上具 有半透光膜及遮光膜，藉由前述半透光膜及前述遮光膜的 201011456 圖案形成遮光部、透光部、及半透光部的多階調光罩，其 特徵爲，在平面觀察中，前述多階調光罩具有位居分開的 2個前述遮光部間的半透光部，前述半透光部具有：第1 半透光區域，係具有第1透過率；及第2半透光區域，係 分別被設置於前述2個遮光部與前述第1半透光區域之 間，具有比前述第1透過率高的第2透過率。 前述多階調光罩，係在關於前述半透光部寬度方向對 包含波長350nm~450nm範圍內波長段的光之光透過強度分 布曲線中，包含前述半透光部寬度方向的中央，且當將設 前述透光部的曝光光線透過率爲100%時、透過率變動量爲 2%以下的區域設爲平坦區域時，前述平坦區域的比例爲超 過50%者。 依照此等構成的話，便能相對地提高遮光膜與半透光 膜之間的境界部分，尤其是，具有對多階調光罩之曝光條 件中之解像界限以下尺寸之境界部分的透過率，藉此，能 提高光強度分布中波峰兩側的光強度，其結果便能實現包 含平坦區域的形狀。因此，即使半透光部圖案的形狀微細 化，亦能使被轉印體上之阻劑圖案的尺寸控制變得容易， 使線寬精度提高。 在本發明的多階調光罩中，較佳爲前述第2半透光區 域的寬度爲對前述多階調光罩之曝光條件中之解像界限以 下的尺寸。 在本發明之多階調光罩中，被夾在前述遮光部間之半 201011456 透光部的寬度較佳爲3/zm~6#m。 在本發明之多階調光罩中，前述第1半透光區域的透 過率與前述第2半透光區域的透過率之差較佳爲10%~50 %。 在本發明之多階調光罩中，前述半透光部之對前述透 光部的相位差較佳爲60°以下。 在本發明之多階調光罩中，係能藉由利用形成於透明 基板上之第1半透光膜與第2半透光膜的積層來構成前述 第1半透光區域，利用形成於透明基板上之前述第1或第 2半透光膜來構成前述第2半透光區域，而使前述第2半透 光區域的透過率比前述第1半透光區域高者。 在本發明之多階調光罩中，係能藉由利用形成於透明 基板上之第1膜厚的半透光膜構成前述第1半透光區域， 利用形成於透明基板上之第2膜厚的半透光膜構成前述第 2半透光區域，而使前述第2半透光區域的透過率比前述 第1半透光區域高者。 在本發明之多階調光罩中，前述多階調光罩較佳爲將 具有膜厚不同的部分之阻劑圖案形成在被轉印體上的阻劑 膜者。 在本發明之多階調光罩中，較佳爲用於製造薄膜電晶 體用基板的光罩。 本發明之第2構成的多階調光罩，係在透明基板上具 有半透光膜及遮光膜，藉由前述半透光膜及前述遮光膜的 201011456 圖案形成遮光部、透光部、及半透光部的多階調光罩，其 特徵爲，前述多階調光罩，係在平面觀察中，具有位居分 開的2個前述遮光部間的半透光部，在關於前述半透光部 寬度方向對包含波長350nm〜450nm範圍內波長段的光之光 透過強度分布曲線中，包含前述半透光部寬度方向的中 央，且當將設前述透光部的曝光光線透過率爲100%時、透 過率變動量爲2%以下的區域設爲平坦區域時，前述平坦 區域的比例爲超過50%者。 在本發明之第3構成的製造多階調光罩之方法中，係 在透明基板上具有半透光膜及遮光膜，藉由前述半透光膜 及前述遮光膜的圖案形成遮光部、透光部、及半透光部的 多階調光罩，其特徵爲在平面觀察中，將半透光膜配置於 分開的2個前述遮光部間，前述半透光部係藉由配置：第 1半透光區域，係具有第1透過率；及第2半透光區域，係 分別被設置在前述2個遮光部與前述第1半透光區域之 間，具有比前述第1透過率高的第2透過率，而使前述半 透光部之曝光光線透過率曲線的平坦區域增大。 本發明之第4構成的圖案轉印方法，其特徵爲，使用 上述多階調光罩，在已形成於被轉印體之阻劑膜中之對應 前述半透光部的部分，將可形成與前述遮光部或前述透光 部不同膜厚的阻劑膜之潛像轉印於前述阻劑膜。 本發明之多階調光罩，係在平面觀察中，具有位居分 開的2個前述遮光部間的半透光部，前述半透光部，具有： 201011456 第1半透光區域，係具有第1透過率：及第2半透光區域， 係分別被設置在前述2個遮光部與前述第1半透光區域之 間，具有比前述第1透過率高的第2透過率，或者是，在 關於前述半透光部寬度方向對包含波長350nm~450nm範圍 內波長段的光之光透過強度分布曲線中，包含前述半透光 部寬度方向的中央，且當將設前述透光部的曝光光線透過 率爲100 %時、透過率變動量爲2%以下的區域設爲平坦區 域時，前述平坦區域的比例爲超過50%者，因此使用此多 〇 階調光罩曝光時，在被轉印體上的阻劑圖案中，可製得充 分的平坦部及聳立的銳利邊緣剖面。於是，能在使用此阻 劑圖案之蝕刻加工中，使被加工體的尺寸控制變得容易， 使線寬精度提高。 【實施方式】 用於實施發明之形態 本發明人，檢討在使用由遮光膜所產生的微細圖案來 φ 形成半透光部的多階調光罩中，使如第13圖的光強度分布 曲線的傾斜成爲更銳利的聳立，成爲包含平坦區域之形狀 的情事。例如，考量藉由將曝光機的解像界限以下的遮光 圖案配置於半透光部，來設定具有所需透過率的半透光部 之方法。於此情況下，在對應半透光部的區域中，可某種 程度地製得具有比較平坦的部分之光強度分布。但是，在 此情況下，透過光的光強度就會下降，而難以自由地選擇 朝被轉印體之阻劑膜的曝光量。在此，半透光部的適切透 -10- 201011456 過率，係指當設透過部中之曝光光線透過率爲100%時，在 10%~70%的範圔內爲該遮罩使用者所需的曝光量。較佳爲 20%~60%的範圍，更佳爲30%~60%的範圍。於是，在如 此範圍內，爲了配合遮罩使用者適用的阻劑材料及曝光環 境等加工條件，能在寬廣的範圍選擇是重要的。因此，一 旦爲了獲得所需的光強度而將半透光部的遮光圖案之間隙 尺寸增大，便會在曝光時解像，當然就會變成無法獲得含 有平坦區域形狀的光強度分布。即，在過去的微細遮光圖 m 案型的多階調光罩中，要兼顧半透光部圖案的微細化及含 有平坦區域形狀的光強度分布兩者是困難的。 本發明人專心檢討無平坦區域形狀的光強度分布及遮 光膜間的半透光膜圖案，著眼於遮光膜與半透光膜之間的 境界部分，尤其是，具有對多階調光罩的曝光條件中之解 像界限以下之尺寸的境界部分’發現能藉由相對地提高此 境界部分的透過率，來提高光強度分布中之波峰兩側的光 ϋ 強度，而達成能實現含有平坦區域的形狀之結果。 換言之，本發明的架構爲在平面觀察中，具有位居分 開的2個前述遮光部間的半透光部，前述半透光部具有： 第1半透光區域，係具有第1透過率；及第2半透光區域’ 係分別被設置於前述2個遮光部與前述第1半透光區域之 間，具有比前述第1透過率高的第2透過率，藉此，能實 現即使半透光部圖案的形狀微細化，亦能使被轉印體上之 阻劑圖案形狀成爲容易控制蝕刻被加工體時的尺寸的模 -11- 201011456 樣，使線寬精度提升之多階調光罩。 以下，參照附圖針對本發明的實施形態詳細地說明。 第1圖係顯示本發明實施形態之多階調光罩1中之圖 案的平面圖。多階調光罩1係使用於例如液晶顯示裝置 (LCD )之薄膜電晶體（TFT)及彩色濾光片、或平面顯示 面板（PDP)等的製造製程者。用於藉由照射曝光光線，將 具有膜厚不同的部分之阻劑圖案形成在被轉印體上的阻劑 膜者。第1圖所示之多階調光罩1中之圖案係含有被夾在 ® 遮光部2間的半透光部3者。具體而言，構成爲具有：遮 光部2，係使用多階調光罩1時使曝光光線遮蔽（透過率 爲約0%);透光部4，係使曝光光線約100%透過；及半 透光部3，係使曝光光線的透過率降低20% 左右。此 等遮光部2、透光部4、及半透光部3，係將形成在玻璃基 板等之透明基板上的半透光膜及遮光膜分別圖案化所製 得。如第1圖所示，該圖案係從左邊開始以透光部4、遮 光部2、半透光部3、遮光部2、透光部4的順序排列。在 以下，將半透光部3等的寬度稱爲此排列方向中之寬度。 又，第1圖所示之遮光部2及半透光部3的圖案形狀只不 過是代表性的一個例子，本發明並非限定於此。 作爲構成半透光膜的材料，可舉出鉻化合物、MoSi化 合物、Si、W、A1等。其中，在鉻化合物方面有氧化鉻 (CrOx )、氮化鉻（CrNx )、氮氧化鉻（CrOxN )、氟化 鉻（CrFx )、及此等中含有碳或氫者。作爲MoSi化合物， -12- 201011456 除了 MoSix以外，可例示MoSi的氧化物、氮化物、氮氧化 物、碳化物等。又，作爲構成遮光膜的材料，可舉出Cr、 Si、W、A1等。遮光部2的透過率係依遮光膜的膜材質及 膜厚的選定來予以設定。又，半透光部3的透過率係依半 透光膜的膜材質及膜厚的選定來予以設定。 半透光部3具有：第1半透光區域12，係具有第1透 過率；及第2半透光區域13，係設置於遮光部2與第1半 透光區域12之間，·具有比第1透過率高的第2透過率。如 參 此一來，藉由在第1半透光區域12的外側設置具有比第1 透過率高的第2透過率之第2半透光區域13，能相對地提 髙第1半透光區域12外側（兩側）區域之透過率。於是， 此第2半透光區域13的寬度較佳爲在對多階調光罩1之曝 光條件中之解像界限以下的尺寸。藉由如此進行，第2半 透光區域13的形狀不會直接如此地被解像，而是能提高半 透光部3的透過率，使光透過強度分布的聳立成爲急峻。 φ 即，如第2圖所示，此多階調光罩1，具有在光透過強度 分布之對應半透光部之區域含有平坦區域P的形狀。在 此，「在光透過強度分布之對應半透光部之區域含有平坦 區域P」係指在關於半透光部3之寬度方向對包含波長 350nm~450nm範圍內波長段的光之光透過強度分布曲線 中，包含半透光部寬度方向的中央，且當將設透光部的曝 光光線透過率爲100 %時、透過率變動量爲2%以下的區域 設爲平坦區域時，平坦區域的比例爲超過對應寬度A之半 -13- 201011456 透光部3之區域的50%者。 如上述，第2半透光區域13的寬度較佳爲在對多階調 光罩1之曝光條件中之解像界限以下的尺寸，因應半透光 部3的尺寸所決定。例如，相對於6/zm以下寬度的半透光 部3，第2半透光區域13的寬度較佳爲2;/m以下，更佳 爲1 W m以下，0.1 // m以上。此情況的曝光條件，係指曝 光光源波長、使用的曝光機之解像度等。本發明之多階調 光罩適合作爲用於曝光波長爲350nm〜450nm (使用包含i 參 線1線的光源）者。又，本發明，在適用多階調光罩的曝 光機係具有數値孔徑NA爲0.1〜0.07左右的光學系者之情 況下，可得到顯著的效果。 進一步地，爲了在半透光部3中使透過光的光強度分 布成爲含有平坦區域P的形狀，較佳爲就第2半透光區域 13的寬度對半透光部3的寬度A加以考慮。第2半透光區 域13的寬度較佳爲使一方成爲（2/5) A以下（若將兩側算 入則爲（4/5 )A以下）。更佳爲，第2半透光區域13的寬 度係一方爲（1/4) A以下。尤其是，一方係（1/10) A (兩 側（1/5 ) A)以上爲佳。又，雖然第1半透光區域12兩側 之第2半透光區域13的寬度較佳爲約略相同，但僅在不損 及本發明效果的範圍內亦可爲不同。 夾在遮光部2間的半透光部3的寬度，一旦考慮所欲 獲得的TFT動作速度、及多階調遮罩的加工性，則較佳爲 ~6#m。能製造半透光部3的寬度（即，對應通道部 -14- 201011456 之半透光部的寬度）爲6//m以下、動作性優良的TFT之 多階調光罩，且，由該半透光部所產生的光強度曲線具有 如上述的平坦區域者，迄今尙未爲人所知。 又，若考慮大型遮罩用曝光機之光學系具有的解像度 者、及獲得具有如第2圖所示之平坦區域（plate zone )之 吊鐘型透過率曲線，則第1半透光區域12之透過率與第2 半透光區域13之透過率的差較佳爲10%~50%。進一步 地，若考慮較佳爲不會在通道部的上下處產生暗線，則半 ❹ 透光部3之對透光部4的曝光光線之相位差較佳爲60°以 下。 在此，考量使用具有包含遮光部2、透光部4及半透 光部3的轉印圖案之3階調光罩來曝光，將圖案轉印至被 轉印體上的阻劑膜。第3圖（a)係顯示第3圖（b)所示 之被夾在遮光部A之半透光部B的透過率曲線之圖表。使 用第3圖（b)的光罩而形成在被轉印體上之阻劑圖案係成 ❹ 爲如將第3圖（a)上下反轉的形狀，該硏鉢狀的極小値對 應阻劑殘膜値（Rt)。當欲使用此種阻劑圖案，藉由蝕刻 加工而加工薄膜時，阻劑圖案的剖面較佳爲略矩形，即聳 立爲垂直。這是因爲將阻劑圖案減少膜量，以其作爲遮罩， 當蝕刻下層側的薄膜時，能尺寸精度高地進行加工的緣 故。因此，例如，可考量使用對光強度變化具有敏銳感光 性的阻劑材。然而，因爲此種阻劑材會僅因些微的曝光量 變化而殘膜値變化，結果使阻劑圖案的形狀變得不安定， -15- 201011456 所以不佳。 因此，尋求不會改變阻劑的感光特性，在遮罩的性能 方面，將阻劑圖案剖面形狀的垂直性（聳立的急峻性）增 高。即，當考量線寬狹窄的區域，例如對應TFT通道部（具 有被夾在遮光部的半透光部的圖案）之部分的阻劑圖案形 狀時，希望底部區域的面積越大越好，壁面係極度急峻地 聳立的垂直面。如本發明，藉由使用具有不同膜透過率之 複數個半透光區域，能設計所需透過率的半透光部3，設 m 計的自由度加大。 針對半透光部中之第1半透光區域12及第2半透光區 域13的膜構成並無特殊限定，可舉出例如第4圖（a)〜（c) 所示的構成。第4圖（a)所示的構成，係在透明基板10 上形成半透光膜14,在半透光部3中半透光膜14的厚度不 同，在遮光部2設置遮光膜11的構成。半透光膜14的膜 厚，係在第2半透光區域13相對地薄（透過率高），在第 g 1半透光區域12相對地厚（透過率低）·ΒΡ，此構成的半 透光部3係以1個膜構成，藉由改變其厚度來形成第1半 透光區域12及第2半透光區域13。 第4圖（b)所示之構成，係在透明基板10上形成半 透光膜14，在半透光膜14的第1半透光區域12上設置其 他半透光膜15,在遮光部2設置遮光膜11之構成。即，此 構成的半透光部3，係以2個半透光膜14、15予以構成， 以1個半透光膜14構成第2半透光區域13(透過率高）， -16- 201011456 以2個半透光膜14、15的積層膜構成第丨半透光區域12 (透過率低）。 第4圖（c)所示之構成，係在透明基板1〇上形成半 透光膜14,第2半透光區域13的半透光膜14被除去，在 半透光部3設置其他的半透光膜15 ,在遮光部2設置遮光 膜11的構成。即，此構成的半透光部3係以2個半透光膜 14、15予以構成’以1個半透光膜15構成第2半透光區域 13(透過率高），以2個半透光膜14、15的積層膜構成第 1半透光區域12(透過率低）。 第4圖（a)所示之構造，能藉由例如第5圖（a)、 (b)所示的製程來製造。又，第4圖（a)所示之構造的 製造方法並不限定於此等方法。在此，將半透光膜14的材 料設定爲矽化鉬，將遮光膜的材料設定爲鉻。又，在以下 的說明中，構成阻劑層的阻劑材料、蝕刻時使用的蝕刻劑、 顯影時使用的顯影液等，係適當選擇在過去的光微影法及 蝕刻製程中能使用者。例如，關於蝕刻劑，係因應構成被 蝕刻膜的材料而適當選擇，關於顯影液係因應使用的阻劑 材料而適當選擇。 如第5圖（a)所示，在透明基板10上形成半透光膜 14，在其上形成遮光膜11，之後，以第2半透光區域13 的半透光膜14露出的方式將遮光膜11圖案化。接著’如 第5圖（b)所示，以經圖案化之遮光膜11爲遮罩而鈾刻 半透光膜14來將半透光膜14的膜厚部分地薄化。之後’ -17- 201011456 除去第1半透光區域12的遮光膜11。 第4圖（b)所示之構造，係例如能藉由第6 (c)所示之製程製造。又，第4圖（b)所示構 方法並不限定於此等方法。在此，將半透光膜14 爲矽化鉬，將半透光膜15的材料設爲氧化鉻，將 的材料設爲鉻。又，在以下的說明中，構成阻劑 材料、蝕刻時使用的蝕刻劑、顯影時使用的顯影 ©適當地選擇能在過去的光微影及蝕刻製程使用者 關於蝕刻劑，係因應構成被蝕刻膜的材料而適當 關於顯影液，係因應使用的阻劑材料而適當地選 如第6圖（a )所示，在透明基板1 〇上形成 14’在其上形成遮光膜11，之後，以使半透光部 光膜14露出的方式將遮光膜11圖案化。接著， (b)所示，全面地形成半透光膜15，在其上形 16°之後，將第1半透光區域12曝光而使阻劑理 〇 地硬化（圖中的元件符號16a)。接著，如第6ί 示’將阻劑膜16顯影，以殘存的阻劑膜16爲遮 半透光膜1 5，之後除去阻劑膜1 6。 第4圖（c)所示之構造，係例如能藉由第7 (g)所示之製程來製造。又，第4圖（c)所示 造方法並不限定於此等方法。在此，將半透光膜 設爲矽化鉬，將半透光膜15的材料設爲氧化鉻， 11的材料設爲鉻。又，在以下的說明中，構成阻 圖（a) ~ 造之製造 的材料設 遮光膜11 層的阻劑 液等，係 。例如， 地選擇， 擇。 半透光膜 3的半透 如第6圖 成阻劑膜 莫16部分 圖（c)所 罩來蝕刻 圖（a) ~ 構造之製 1 4的材料 將遮光膜 .劑層的阻 • 18 · 201011456 劑材料、蝕刻時使用的蝕刻劑、顯影時使用的顯影液等， 係適當地選擇能在過去的光微影及蝕刻製程使用者。例 如，關於蝕刻劑，係因應構成被蝕刻膜的材料而適當地選 擇，關於顯影液，係因應使用的阻劑材料而適當地選擇。 如第7圖（a)所示，在透明基板1〇上形成半透光膜 14，在其上形成遮光膜11，之後，以使半透光部的半透光 膜14露出的方式將遮光膜11圖案化。接著，如第7圖（b) 雌 所示，全面地形成阻劑膜16。之後，將第1半透光區域12 曝光而使阻劑膜16部分地硬化（圖中的元件符號16a)。 接著，如第7圖（c )所示，將阻劑膜16顯影，如第7圖 (d)所示，以殘存的阻劑膜16爲遮罩來蝕刻半透光膜14。 如第7圖（e)所示，全面地形成半透光膜15,在其上 形成阻劑膜16_1。之後，將包含半透光部的區域曝光而使 阻劑膜16-1部分地硬化（圖中的元件符號16b)。接著， 如第7圖（f)所示，將阻劑顯影，如第7圖（g )所示， % 以殘存的阻劑膜16-1爲遮罩，蝕刻半透光膜15。 此種本發明多階調光罩之半透光部中的光強度分布亦 反映至使用本發明的多階調光罩來將被轉印體上的阻劑膜 曝光，經歷顯影製程所形成之阻劑圖案的形狀。亦即，在 使用本發明之多階調光罩而於被形成在被轉印體上的阻劑 膜上形成對應半透光部部分的膜厚與對應遮光部或透光部 部分的膜厚不同之圖案的情況下，能形成如下的阻劑圖 案：當將對應前述透光部或遮光部之顯影後之阻劑膜厚設 -19- 201011456 爲100%，包含對應前述半透光部的顯影後阻劑膜之寬度方 向的中央，且將膜厚變動爲2%以下的區域設爲平坦部時， 平坦部的寬度超過前述多階調光罩中之對應寬度A之半透 光部部分的寬度之50%者。 因此，當使用本發明之多階調光罩，將半透光部的圖 案轉印於被轉印體上的阻劑膜時，能具有大致一定膜厚的 平坦部，且形成所需膜厚範圍的阻劑圖案。藉此，變得容 易控制形成在被轉印體的圖案尺寸，圖案的線寬精度提高。 參 又，依照本發明的話，除了上述的效果以外，相較於 過去的藉由遮光膜形成微細圖案的半透光部（微細圖案型 的多階調光罩），半透光部的圖案（以半透光膜所形成之 半透光膜形成部）所容許的線寬範圍廣，製作遮罩時的線 寬管理容易。因此，量產上的優勢大。進一步地，當遮罩 使用者考慮所欲適用的加工製程（阻劑素材、顯影條件、 蝕刻條件等）時，能製得具有用以製得所須高度的阻劑圖 φ 案之所需透過率的遮罩。此設計，可將被包含在半透光部 之2種半透光區域的透過率分別設定爲所需者。又，依照 本發明的話，便不須要在製造裝置時準備極高解像度（光 NA)的曝光機，即使使用現行的曝光機，亦能充分對應TFT 通道部的微細化，所以在製造裝置方面是很大的優勢。 接著，針對爲了使本發明的效果明確而舉出之實施例 加以說明。 (實施例） -20- 201011456 在第1圖所示之圖案中，藉由上述方法，製作具有分 別將半透光部3的寬度設爲3.6//m，將第2半透光區域13 的寬度設爲〇_8vm(第1半透光區域12的寬度爲2.0/zm) 之半透光部3的多階調光罩1。此時，半透光部3的構成係 設爲第4圖（b)所示之構造，使用鉻作爲構成遮光膜11 的材料，使用MoSi作爲構成第2半透光區域13的材料， 使用氧化鉻作爲構成構成第1半透光區域12之積層膜的另 ©—方的半透光膜15之材料。又，以使第1半透光區域12 的透過率成爲45%，使第2半透光區域13的透過率成爲 25%的方式調整半透光膜14、15的厚度。又，在此所謂的 半透光膜14、15的透過率，係指膜固有的透過率，並非後 述之實效透過率。 將使用此種多階調光罩對被轉印體上的阻劑膜進行圖 案轉印時之實效透過率Τα的曲線（curve)顯示於第8圖 (a)、（b)(第8圖（b)顯示第8圖（a)的部分放大）。 φ 能舉出實效透過率作爲直接支配實際上所形成之阻劑圖案 的殘膜値範圍（range )者。藉由利用實效透過率的管理進 行殘膜値的管理，即使在有狹窄寬度之圖案的情況下，亦 能經常穩定地製得所須殘膜値之阻劑圖案。 在此，所謂的實效透過率，意味實際上透過遮罩之曝 光光線的透過率，係將透光部（相對於曝光機的解像度爲 充分寬者）的透過率設爲100 %時之透過率。一旦圖案寬度 變小，便會受到繞射的影響，受到鄰接圖案的影響而透過 -21- 201011456 率會變化，使其反映那種影響的透過率。因爲實效透過 係考慮除了膜固有的透過率以外，還考慮光學條件及圖 設計的指標，所以是正確反映殘膜値狀況的指標，適於 爲殘膜値管理用的指標者。又，能將在透過半透光部之 強度分布中，具有最大値部分的透過率設作爲實效透過 的基準値。這是因爲具有當使用例如此光罩，在被轉印 上形成正型阻劑的阻劑圖案時，與在半透光部所產生之 劑殘膜値的最小値的相關性。對於這種範圍管理，例如 當薄膜電晶體的通道區域寬度爲5#m以下時特別有效。 作爲測定上述實效透過率的手段，較佳爲使其再現 近似由曝光機所產生之曝光條件。作爲該種裝置，可舉 例如第9圖所示之裝置。此裝置是主要由光源21、將來 光源21的光照射至光罩23的照射光學系22、使透過光 23的光成像之對物透鏡系24、及將經過對物透鏡系24 得到的像加以拍攝的攝像手段25所構成。 光源21係發出既定波長光束者，能使用例如鹵素燈 金屬鹵化物燈、UHP燈（超高壓水銀燈）等。例如，能 用具有近似使用遮罩之曝光機的分光特性的光源。 照射光學系22係導引來自光源21的光而將光照射 光罩23。此照射光學系22爲了將數値孔徑（NA)設爲 變，具備有光闌機構（孔徑光闌27)。此照射光學系 較佳爲具備有用於調整光罩23中之光的照射範圍之視 光闌26。經過此照射光學系22的光被照射於藉由遮罩保 率 案 作 光 率 體 阻 或 出 白 罩 所 使 於 可 22 野 持 -22- 201011456 具23a所保持之光罩23。此照射光學系22被配設在框體 33內。 光罩23係藉由遮罩保持具23 a所保持。此遮罩保持具 23a，係以將光罩23的主平面設爲約垂直的狀態，支持此 光罩23的下端部及側緣部附近，成爲使此光罩23傾斜、 固定而保持的樣子。此遮罩保持具23a，以光罩23而言， 係成爲能保持大型（例如，主平面爲1220 mm xl 400腿，厚 度13麵者，或其以上者），且，各種大小的光罩23。又， 參 「約垂直」係指第9圖中以Θ表示之離鉛直的角度爲約 10度以內。被照射在光罩23的光會透過此光罩23而被入 射至對物透鏡系24。 對物透鏡系24係例如由以下所構成：第1群（模擬器 透鏡（simulator lens) ) 24a，係射入透過光罩23的光， 對此光束施以無限遠補正而成爲平行光；及第2群（成像 透鏡）24b，係使經過此第1群的光束成像。模擬器透鏡24a φ 具備有光闌機構（孔徑光闌27-1 )，使數値孔徑（ΝΑ)成 爲可變。經過對物透鏡系24的光束係藉由攝像手段25受 光。將此對物透鏡系24配設於框體33-1內。 此攝像手段25拍攝光罩23的像。能使用例如CCD等 之攝像元件作爲此攝像手段25。 在此裝置中，因爲分別使照射光學系22的數値孔徑及 對物透鏡系24的數値孔徑成爲可變，所以能改變照射光學 系22的數値孔徑之對對物透鏡系24的數値孔徑之比，即 -23- 201011456 S i g m a 値（σ :同調性（c 〇 h e r e n c e ))。 又，在此裝置中，設置有：演算手段31，係針對藉由 攝像手段25所獲得之攝影畫像進行畫像處理、演算、與既 定的閾値（threshold value )之比較及顯示等；控制手段34, 係具有顯示手段；及移動操作手段35,係改變框體33的位 置。因此，能使用所獲得的攝影畫像、或根據其所獲得的 光強度分布，藉由控制手段進行既定的演算，求出在使用 其他曝光光線的條件下之攝影畫像、或光強度分布及透過 率》 第9圖所示之具有此種構成的裝置，係使NA與σ値 成爲可變，光源的光線源亦能改變，所以能再現各種曝光 機的曝光條件。在簡易地近似一般液晶顯示裝置用等之大 型光罩的曝光裝置的情況下，使用已將由i線、h線、g線 所產生之光強度一致化的照射光，在曝光光學系方面可以 適用NA爲0.0 8左右、係屬照射系與對物系的NA比之同 調性σ爲0.8左右的條件。 考慮上述情事，在本發明中，較佳爲根據圖案形狀及 使用的半透光膜（較佳爲也考慮曝光機的光源波長分布、 光學系的條件），由實際上所欲獲得的光罩透過率（實效 透過率），計算、決定使用之半透光膜的透過率（充分寬 廣面積中之透過率），進行光罩的設計。 由第8圖（a) 、（b)可知，在實效透過率曲線（光 透過強度分布曲線）之多階調光罩中之對應寬度A之前述 -24 - 201011456 半透光部的部分中，包含半透光部寬度方向的中央’且當 將透光部的曝光光線透過率設爲100%時、透過率之變動量 爲2%以下的區域（平坦區域）的比例超過50%。因此’ 考量使用此多階調光罩形成阻劑圖案的話，便能形成如下 的阻劑圖案：將對應透光部或遮光部之顯影後的阻劑膜厚 設爲100%，在對應半透光部之區域的中央具有顯影後的阻 劑膜的膜厚變動爲2%以下的平坦部，其寬度超過對應寬 度A之半透光部的寬度之50%。 (比較例） 在第1圖所示之圖案中，除了將半透光部3的寬度設 爲3.6ym，以透過率爲40%的半透光膜（MoSi膜,）構成 半透光部3以外，與實施例同樣地進行而製作多階調光 罩。於第8圖（a) 、（b)顯示便用此種多階調光罩來對 被轉印體上的阻劑膜進行圖案轉印時之實效透過率Τα之曲 線。由第8圖（a) 、（b)可知，成爲在多階調光罩中之 φ 對應寬度A的前述半透光部的部分沒有平坦區域的形狀之 阻劑圖案。 接著，使用第10圖及第11圖說明使用本發明之多階 調遮罩的TFT基板製造製程的一個例子。在玻璃基板41 上形成閘極用金靥膜，藉由使用光罩的光微影製程形成閘 極42。接著，形成閘極絕緣膜43、第1半導體膜44(a-Si)、 第2半導體膜45 ( N + a-Si)、源極汲極用金靥膜46、及正 型光阻膜47(第10圖（a))。接著，如第10圖（b)所 -25- 201011456 示，使用具有遮光部51、透光部52及半透光部53之多階 調光罩50，將正型光阻膜47曝光、顯影，藉以覆蓋TFT 通道部及源極汲極形成區域、資料線形成區域，且形成通 道部形成區域比源極汲極形成區域薄的第1阻劑圖案47a。 接著，如第10圖（c)所示，以第1阻劑圖案47a作 爲遮罩，蝕刻源極汲極用金屬膜46及第2半導體膜45、第 1半導體膜44。接著，如第1 1圖（a)所示，利用由氧所 產生的灰化處理（ashing )去除通道部形成區域之薄的阻劑 9 膜，形成第2阻劑圖案47b。接著，如第1 1圖（b )所示， 以第2阻劑圖案47b作爲遮罩，蝕刻源極汲極用金靥膜46, 形成源極/汲極46a、46b，接著，蝕刻第2半導體膜45，最 後，如第1 1圖（c )所示，剝離殘留的第2阻劑圖案47b » 如此一來，一旦使用本發明的多階調光罩，將TFT圖 案轉印至阻劑膜，便能形成具有約一定膜厚的平坦部及所 需膜厚範圍的阻劑圖案，所以變得易於控制形成於被轉印 g 體上之TFT圖案的尺寸，TFT圖案的線寬精度提高。 本發明不限定於上述實施形態，能夠適當變更而實 施。上述實施形態中之構件的個數、尺寸、處理順序等係 —個例子，可在發揮本發明效果的範圍內進行各種變更而 實施。此外，僅在不脫離本發明目的之範圍內可進行各種 變更而實施。 【圖式簡單說明】 第1圖係顯示本發明實施形態之多階調光罩的平面 -26- 201011456 圖。 第2圖係顯示本發明實施形態的多階調光罩中之半透 光部之對波長365nm〜436nm的光透過強度分布曲線之圖。 第3圖（a)係顯示透過率曲線的圖，第3圖（b)係 顯示含有遮光部及半透光部的圖案的圖。 第4圖（a) ~(c)係各別顯示本發明實施形態之多階 調光罩的構成例之圖。 第5圖（a) 、（b)係用於說明顯示於第4圖（a)的 ❹ 構成之製造製程的圖。 第6圖（a) ~(c)係用於說明顯示於第4圖（b)的 構成之製造製程的圖。 第7圖（a) ~(g)係用於說明顯示於第4圖（c)的 構成之製造製程的圖。 第8圖（a)係顯示使用本發明實施形態的多階調光罩 及過去的多階調光罩，對被轉印體上的阻劑膜進行圖案轉 φ 印時的實效透過率的圖，第8圖（b)係放大其一部分的圖。 第9圖係顯示用於測定實效透過率之裝置的槪略構成 圖。 第10圖（a) ~(c)係用於說明使用本發明實施形態 之多階調光罩的TFT基板的製造製程之圖。 第11圖（a)〜（c)係用於說明接續顯示於第10圖（c) 之製程所進行的製程之圖。 第12圖係顯示過去多階調光罩的一例中之半透光部 -27- 201011456 之對波長365nm~436nm的 第13圖係顯示過去 部之對波長365nm〜436nm 【主要元件符號說明】 光透過強度分布曲線的圖。 多階調光罩的其他例中之半透光 的光透過強度分布曲線的圖。201011456 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to an image forming device and a liquid crystal display device (Liquid Crystal Display. Hereinafter, it is called LCD) and f @ stomach 7 multi-step dimmer and pattern transfer method. [Prior Art] In the field of LCDs, Thin Film Transistor Liquid Crystal Display (hereinafter referred to as TFT-LCD) is easier to form thinner and consumes less power than CRT (Cathode Ray Tube). The advantages are rapidly commoditized. The TFT-LCD has a TFT substrate having a structure in which ft is arranged in each pixel (arranged in a matrix), and a color filter in which red, green, and blue pixel patterns are arranged corresponding to the respective pixels, and the liquid crystal layer is present in the middle of the liquid crystal layer. Coincident structure. In the TFT-LCD, there are many processes, and only the TFT substrate is manufactured using five to six photomasks. Under such circumstances, a method of manufacturing a TFT substrate using four masks is proposed in "FPD Intelligence" (pp. 31-35), which was published in May 1999. This method reduces the number of masks used by using a multi-step dimming cover (hereinafter referred to as a photomask) having a light shielding portion, a light transmitting portion, and a semi-light transmitting portion. Here, the semi-transmissive portion means that when the pattern is transferred to the object to be transferred by using the mask, the amount of transmitted light to be transmitted is reduced by a predetermined amount, and the residue after development of the resist film on the transferred body is controlled. The amount of film, which is a light-shielding portion, a light-transmitting portion, and a semi-transmissive portion, is called a multi-step dimming cover. 201011456 SUMMARY OF THE INVENTION In recent years, in particular, as the pattern of the TFT channel portion is miniaturized, a more and more fine pattern in the multi-step dimming cover becomes necessary. For example, a multi-step dimming cover can be used in which a portion corresponding to a source and a drain of the TFT is formed as a light shielding portion, and a portion corresponding to a channel portion between the source and the drain is formed as Semi-transmissive portion (see Fig. 3(b)). In the case of the channel length corresponding to the channel pattern of the multi-step dimmer TFT channel portion thus formed, that is, the width of the semi-transmissive portion between the light-shielding films is about 7 m, the mask is used. The light intensity distribution on the transfer target caused by the transmitted light of the semi-transmissive portion in the exposure machine at that time is as shown in Fig. 12. Further, for example, a light source having a wavelength region of 350 nm to 450 nm including a g line (wavelength of 4 6 nm) and an i line (wavelength of 365 nm) can be used as an exposure light source of the exposure machine. According to this light intensity distribution, the resist film on the transferred body is exposed, and thereafter, a resist process is formed by a resist development process. Therefore, the light intensity distribution made by the semi-transmissive portion of the graytone mask is reflected to the shape of the formed resist pattern. On the other hand, the pattern shape of the semi-transmissive portion is further refined, and the width of the semi-transmissive portion between the light-shielding films becomes, for example, 3. In the case of 6/zm, the light intensity distribution caused by the transmitted light of the semi-transmissive portion in the exposure machine when the mask is used becomes as shown in Fig. 13. As can be seen from Fig. 13, the shape of the light intensity distribution curve is different from the shape of the light intensity distribution curve shown in Fig. 12, and there is almost no plate zone near the peak. In other words, since the semi-transmissive portion in the vicinity of the boundary with the light-shielding portion generates light diffraction in response to the resolution of the exposure machine, the light intensity distribution curve depicts a predetermined tilt. Then, once the size (width) of the semi-transmissive portion becomes, for example, 6/m or less, it becomes a light intensity distribution curve of almost no flat region as shown in Fig. 13. This is considered to be because the influence of the diffraction becomes large to the extent that it cannot be ignored with respect to the wavelength of the exposure light and the resolution of the exposure machine. Therefore, once the mask thus formed is used for exposure, the resist film on the transfer target is exposed, and the resist pattern formed by the development process is transferred to the normal distribution type having almost no flat region. shape. In general, it is desirable that the profile of the resist pattern produced is perpendicular to the substrate, and the resist pattern forms a taper profile at the edge, compared to the channel width. As a result, the taper angle tends to become smaller (the direction in which the lie is lying down). When the resist pattern having such a tapered cross-sectional shape and a normal distribution shape having almost no flat region is used, etching of the transferred body is performed, and the pattern size of the processed layer formed by the uranium engraving is greatly changed, and the pattern is changed. The size control is very difficult, and the wiring width accuracy is degraded. The present invention has been made in view of the above, and it is an object of the present invention to provide a resist pattern on a transfer target which can easily control a transfer target of a subsequent process even if the shape of the semi-transmissive portion pattern is made fine. A multi-step dimmer and pattern transfer method that improves the line width accuracy of the processing process. The multi-step dimming cover of the first aspect of the present invention has a semi-transmissive film and a light-shielding film on the transparent substrate, and the light-shielding portion, the light-transmitting portion, and the light-transmitting portion are formed by the semi-transmissive film and the 201011456 pattern of the light-shielding film. The multi-step dimming cover of the semi-transmissive portion is characterized in that, in plan view, the multi-step dimming cover has a semi-transmissive portion between two separated light-shielding portions, and the semi-transmissive portion has: The first semi-transmissive region has a first transmittance; and the second semi-transmissive region is provided between the two light-shielding portions and the first semi-transmissive region, and has a first transmittance. High second transmittance. The multi-step dimming cover includes a light transmission intensity distribution curve for light having a wavelength range of a wavelength range of 350 nm to 450 nm in a width direction of the semi-transmissive portion, and includes a center in a width direction of the semi-transmissive portion, and When the area where the light transmittance of the light transmitting portion is 100% and the area where the amount of change in transmittance is 2% or less is a flat region, the ratio of the flat region is more than 50%. According to such a configuration, the boundary portion between the light shielding film and the semi-transmissive film can be relatively increased, and in particular, the transmittance of the boundary portion of the size below the resolution limit in the exposure condition of the multi-step dimmer can be improved. Thereby, the light intensity on both sides of the peak in the light intensity distribution can be increased, and as a result, the shape including the flat region can be realized. Therefore, even if the shape of the semi-transmissive portion pattern is made fine, the size control of the resist pattern on the transfer target can be easily performed, and the line width precision can be improved. In the multi-step dimming cover of the present invention, it is preferable that a width of the second semi-transmissive region is a size below a resolution limit in exposure conditions of the multi-step dimming cover. In the multi-step dimming cover of the present invention, the width of the light transmitting portion is preferably 3/zm to 6#m, which is sandwiched between the light shielding portions. In the multi-step dimming cover of the present invention, the difference between the transmittance of the first semi-transmissive region and the transmittance of the second semi-transmissive region is preferably 10% to 50%. In the multi-step dimming cover of the present invention, the phase difference of the semi-transmissive portion with respect to the light-transmitting portion is preferably 60 or less. In the multi-step dimming cover of the present invention, the first semi-transmissive region can be formed by laminating a first semi-transmissive film and a second semi-transmissive film formed on a transparent substrate, and can be formed by The first or second semi-transmissive film on the transparent substrate constitutes the second semi-transmissive region, and the transmittance of the second semi-transmissive region is higher than that of the first semi-transmissive region. In the multi-step dimming cover of the present invention, the first semi-transmissive region can be formed by a semi-transmissive film having a first film thickness formed on a transparent substrate, and the second film formed on the transparent substrate can be used. The thick semi-transmissive film constitutes the second semi-transmissive region, and the transmittance of the second semi-transmissive region is higher than that of the first semi-transmissive region. In the multi-step dimming cover of the present invention, the multi-step dimming cover is preferably a resist film formed by forming a resist pattern having a portion having a different film thickness on the transfer target. In the multi-step dimming cover of the present invention, a photomask for manufacturing a substrate for a thin film transistor is preferred. The multi-step dimming cover of the second aspect of the present invention has a semi-transmissive film and a light-shielding film on the transparent substrate, and the light-shielding portion, the light-transmitting portion, and the light-transmitting portion are formed by the semi-transmissive film and the 201011456 pattern of the light-shielding film. a multi-step dimming cover of a semi-transmissive portion, characterized in that the multi-step dimming cover has a semi-transmissive portion between two of the light-shielding portions which are separated in a plane view, in relation to the semi-transparent portion. The light transmission intensity distribution curve of the light portion width direction to the light having a wavelength range of the wavelength range of 350 nm to 450 nm includes the center in the width direction of the semi-transmissive portion, and the exposure light transmittance of the light transmitting portion is 100. In the case of %, when the region where the transmittance variation amount is 2% or less is a flat region, the ratio of the flat region is more than 50%. In the method of manufacturing a multi-step dimming cover according to the third aspect of the present invention, the semi-transparent film and the light-shielding film are provided on the transparent substrate, and the light-shielding portion is formed by the semi-transmissive film and the pattern of the light-shielding film. The multi-step dimming cover of the light portion and the semi-transmissive portion is characterized in that the semi-transmissive film is disposed between the two separate light-shielding portions in plan view, and the semi-transmissive portion is disposed by: a semi-transmissive region having a first transmittance; and a second semi-transmissive region provided between the two light-shielding portions and the first semi-transmissive region, respectively, having a higher transmittance than the first transmittance The second transmittance increases the flat region of the exposure light transmittance curve of the semi-transmissive portion. According to a fourth aspect of the present invention, in the pattern transfer method of the present invention, the multi-step dimming cover can be formed in a portion of the resist film formed on the transfer target corresponding to the semi-transmissive portion. A latent image of a resist film having a film thickness different from that of the light shielding portion or the light transmitting portion is transferred to the resist film. The multi-step dimming cover of the present invention has a semi-transmissive portion between two of the light-shielding portions separated in plan view, and the semi-transmissive portion has: 201011456 a first semi-transmissive region having The first transmittance and the second semi-transmissive region are respectively provided between the two light shielding portions and the first semi-transmissive region, and have a second transmittance higher than the first transmittance, or a light transmission intensity distribution curve for light having a wavelength range of a wavelength range of 350 nm to 450 nm in the width direction of the semi-transmissive portion, including a center in the width direction of the semi-transmissive portion, and when the light transmitting portion is to be provided When the area where the exposure light transmittance is 100% and the transmittance variation amount is 2% or less is a flat area, the ratio of the flat area is more than 50%. Therefore, when the multi-step dimmer is used for exposure, In the resist pattern on the transfer body, a sufficient flat portion and a sharp edge portion which stands tall can be obtained. Therefore, in the etching process using the resist pattern, the size control of the object to be processed can be facilitated, and the line width precision can be improved. [Embodiment] The present invention has been made to examine a light intensity distribution curve as shown in Fig. 13 in a multi-step dimming cover in which a semi-transmissive portion is formed by using a fine pattern generated by a light-shielding film. The slanting becomes a sharper towering and becomes a shape that includes the shape of a flat area. For example, a method of setting a semi-transmissive portion having a desired transmittance by arranging a light-shielding pattern having a resolution lower than the resolution limit of the exposure machine in the semi-transmissive portion is considered. In this case, in a region corresponding to the semi-transmissive portion, a light intensity distribution having a relatively flat portion can be obtained to some extent. However, in this case, the light intensity of the transmitted light is lowered, and it is difficult to freely select the exposure amount to the resist film of the transfer target. Here, the appropriate transmittance of the semi-transmissive portion is -10-201011456, which means that when the exposure light transmittance in the transmissive portion is 100%, the mask user is in the range of 10% to 70%. The amount of exposure required. It is preferably in the range of 20% to 60%, more preferably in the range of 30% to 60%. Therefore, in such a range, it is important to be able to select a wide range in order to match the processing conditions of the resist material and the exposure environment which are suitable for the user. Therefore, once the gap size of the light-shielding pattern of the semi-transmissive portion is increased in order to obtain the desired light intensity, the image is resolved at the time of exposure, and of course, the light intensity distribution including the shape of the flat region cannot be obtained. In other words, in the conventional multi-step dimming mask of the fine shading pattern m, it is difficult to achieve both the miniaturization of the semi-transmissive portion pattern and the light intensity distribution including the shape of the flat region. The present inventors focused on reviewing the light intensity distribution of the shape of the flat region and the semi-transmissive film pattern between the light shielding films, focusing on the boundary portion between the light shielding film and the semi-transmissive film, in particular, having a multi-step dimming cover. The boundary portion of the size below the resolution limit in the exposure condition is found to increase the pupil intensity on both sides of the peak in the light intensity distribution by relatively increasing the transmittance of the boundary portion, thereby achieving a flat region The result of the shape. In other words, the structure of the present invention has a semi-transmissive portion between two of the light-shielding portions separated in plan view, and the semi-transmissive portion has a first semi-transmissive region having a first transmittance; And the second semi-transmissive region ′ is provided between the two light-shielding portions and the first semi-transmissive region, and has a second transmittance higher than the first transmittance, thereby enabling even a half The shape of the light-transmitting portion pattern is made finer, and the shape of the resist pattern on the transfer target can be a mode -11-201011456 which is easy to control the size of the object to be processed, and the multi-step dimming which improves the line width precision. cover. Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. Fig. 1 is a plan view showing a pattern in the multi-step dimmer 1 of the embodiment of the present invention. The multi-step dimmer 1 is used in a manufacturing process such as a thin film transistor (TFT) of a liquid crystal display device (LCD), a color filter, or a flat display panel (PDP). A resist film formed by forming a resist pattern having a portion having a different film thickness by irradiating exposure light to a resist film. The pattern in the multi-step dimmer 1 shown in Fig. 1 includes the semi-transmissive portion 3 sandwiched between the light-shielding portions 2. Specifically, the light-shielding portion 2 is configured to shield the exposure light when the multi-step dimmer 1 is used (the transmittance is about 0%); the light-transmitting portion 4 transmits the exposure light by about 100%; The light transmitting portion 3 reduces the transmittance of the exposure light by about 20%. The light-shielding portion 2, the light-transmitting portion 4, and the semi-transmissive portion 3 are each obtained by patterning a semi-transmissive film and a light-shielding film formed on a transparent substrate such as a glass substrate. As shown in Fig. 1, the pattern is arranged in the order of the light transmitting portion 4, the light shielding portion 2, the semi-light transmitting portion 3, the light shielding portion 2, and the light transmitting portion 4 from the left side. Hereinafter, the width of the semi-transmissive portion 3 or the like is referred to as the width in the arrangement direction. Further, the pattern shapes of the light shielding portion 2 and the semi-light-transmitting portion 3 shown in Fig. 1 are merely representative examples, and the present invention is not limited thereto. Examples of the material constituting the semi-transmissive film include a chromium compound, a MoSi compound, Si, W, and A1. Among them, chromium compounds (CrOx), chromium nitride (CrNx), chromium oxynitride (CrOxN), chromium fluoride (CrFx), and carbon or hydrogen are contained in the chromium compound. As the MoSi compound, -12-201011456 may be exemplified by an oxide, a nitride, a nitrogen oxide, a carbide or the like of MoSi in addition to MoSix. Further, examples of the material constituting the light shielding film include Cr, Si, W, and A1. The transmittance of the light shielding portion 2 is set in accordance with the film material and film thickness of the light shielding film. Further, the transmittance of the semi-transmissive portion 3 is set in accordance with the film material and film thickness of the semi-transmissive film. The semi-transmissive portion 3 has a first semi-transmissive region 12 having a first transmittance, and a second semi-transmissive region 13 disposed between the light-shielding portion 2 and the first semi-transmissive region 12 and having The second transmittance is higher than the first transmittance. As a result, by providing the second semi-transmissive region 13 having a second transmittance higher than the first transmittance on the outer side of the first semi-transmissive region 12, the first semi-transparent can be relatively improved. The transmittance of the outer (both sides) region of the region 12. Therefore, the width of the second semi-transmissive region 13 is preferably a size below the resolution limit in the exposure conditions of the multi-step dimmer 1. By doing so, the shape of the second semi-transmissive region 13 is not directly resolved as described above, but the transmittance of the semi-transmissive portion 3 can be increased, and the light transmission intensity distribution can be made steep. φ That is, as shown in Fig. 2, the multi-step dimmer 1 has a shape including a flat region P in a region of the corresponding semi-transmissive portion of the light transmission intensity distribution. Here, "the region including the flat region P in the region corresponding to the semi-transmissive portion of the light transmission intensity distribution" means the light transmission intensity of light in the wavelength range including the wavelength range of 350 nm to 450 nm in the width direction of the semi-light-transmitting portion 3. The distribution curve includes a center in the width direction of the semi-transmissive portion, and when a region where the transmittance of the light-transmitting portion is 100% and a region where the amount of change in transmittance is 2% or less is a flat region, the flat region is The ratio is more than 50% of the area of the light-transmitting portion 3 which is more than half of the corresponding width A-13-201011456. As described above, the width of the second semi-transmissive region 13 is preferably a size below the resolution limit in the exposure conditions of the multi-step dimmer 1, and is determined by the size of the semi-transmissive portion 3. For example, the width of the second semi-transmissive region 13 is preferably 2; / m or less, more preferably 1 W m or less, with respect to the semi-transmissive portion 3 having a width of 6/zm or less. 1 // m or more. The exposure conditions in this case refer to the wavelength of the exposure light source, the resolution of the exposure machine used, and the like. The multi-step dimmer of the present invention is suitable for use as an exposure wavelength of 350 nm to 450 nm (using a light source including i-line 1 line). Moreover, in the present invention, the exposure system having a multi-step dimmer has a number of apertures NA of 0. 1~0. A significant effect can be obtained with an optical system of around 07. Further, in order to make the light intensity distribution of the transmitted light in the semi-transmissive portion 3 into a shape including the flat region P, it is preferable to consider the width A of the semi-transmissive portion 3 with respect to the width of the second semi-transmissive region 13. . The width of the second semi-transmissive region 13 is preferably such that (2/5) A or less (or (4/5) A or less if both sides are included). More preferably, the width of the second semi-transmissive region 13 is (1/4) A or less. In particular, one (1/10) A (both sides (1/5) A) or more is preferable. Further, although the width of the second semi-transmissive region 13 on both sides of the first semi-transmissive region 12 is preferably approximately the same, it may be different only within a range that does not impair the effects of the present invention. The width of the semi-transmissive portion 3 sandwiched between the light-shielding portions 2 is preferably ~6 #m in consideration of the desired TFT operating speed and the workability of the multi-step mask. It is possible to manufacture a multi-step dimming cover of a TFT having a width of the semi-transmissive portion 3 (that is, a width corresponding to the semi-transmissive portion of the channel portion 14 - 201011456) of 6 / / m or less and excellent in workability, and The light intensity curve generated by the semi-transmissive portion has a flat region as described above, and has not been known so far. Further, the first semi-transmissive region 12 is considered in consideration of the resolution of the optical system of the large-mask exposure machine and the bell-shaped transmittance curve having the plate zone as shown in FIG. The difference between the transmittance and the transmittance of the second semi-transmissive region 13 is preferably 10% to 50%. Further, it is preferable that the phase difference of the exposure light to the light transmitting portion 4 of the half-transmissive portion 3 is preferably 60 or less, in consideration of the fact that dark lines are not generated in the upper and lower portions of the channel portion. Here, the resist film is transferred onto the transfer target by exposure using a third-order dimming cover having a transfer pattern including the light shielding portion 2, the light transmitting portion 4, and the semi-transmissive portion 3. Fig. 3(a) is a graph showing the transmittance curve of the semi-transmissive portion B sandwiched between the light shielding portions A shown in Fig. 3(b). The resist pattern formed on the transfer target by using the mask of Fig. 3(b) is a shape in which the shape of the crucible is reversed as shown in Fig. 3(a). Residual film 値 (Rt). When the resist pattern is to be used, when the film is processed by etching, the cross section of the resist pattern is preferably slightly rectangular, i.e., vertical. This is because the resist pattern is reduced in the amount of the film, and as a mask, when the film on the lower layer side is etched, the film can be processed with high dimensional accuracy. Therefore, for example, a resist material which is sensitive to changes in light intensity can be used. However, since the resist material changes only due to a slight change in the amount of exposure, the shape of the resist pattern becomes unstable, and -15-201011456 is not preferable. Therefore, it is sought to increase the verticality (the sharpness of the towering) of the cross-sectional shape of the resist pattern in terms of the performance of the mask without changing the photosensitive characteristics of the resist. That is, when the area where the line width is narrow is considered, for example, the shape of the resist pattern corresponding to the portion of the TFT channel portion (the pattern having the semi-transmissive portion sandwiched by the light shielding portion), it is desirable that the area of the bottom portion is as large as possible, and the wall surface is A vertical surface that rises extremely sharply. According to the present invention, by using a plurality of semi-transmissive regions having different film transmittances, the semi-transmissive portion 3 having a desired transmittance can be designed, and the degree of freedom of the meter can be increased. The film configuration of the first semi-transmissive region 12 and the second semi-transmissive region 13 in the semi-transmissive portion is not particularly limited, and examples thereof include those shown in Figs. 4(a) to 4(c). In the configuration shown in Fig. 4(a), the semi-transmissive film 14 is formed on the transparent substrate 10, and the thickness of the semi-transmissive film 14 is different in the semi-transmissive portion 3, and the light-shielding portion 11 is provided in the light-shielding portion 2. . The film thickness of the semi-transmissive film 14 is relatively thin in the second semi-transmissive region 13 (high transmittance), and is relatively thick in the first g1 semi-transmissive region 12 (low transmittance). The semi-transmissive portion 3 is formed of one film, and the first semi-transmissive region 12 and the second semi-transmissive region 13 are formed by changing the thickness thereof. In the configuration shown in FIG. 4(b), the semi-transmissive film 14 is formed on the transparent substrate 10, and the other semi-transmissive film 15 is provided on the first semi-transmissive region 12 of the semi-transmissive film 14, in the light shielding portion. 2 The configuration of the light shielding film 11 is set. In other words, the semi-transmissive portion 3 having the above configuration is composed of two semi-transmissive films 14 and 15, and the one semi-transmissive film 14 constitutes the second semi-transmissive region 13 (high transmittance), -16- 201011456 The second semi-transmissive region 12 is formed by a laminated film of two semi-transmissive films 14 and 15 (low transmittance). In the configuration shown in Fig. 4(c), the semi-transmissive film 14 is formed on the transparent substrate 1A, the semi-transmissive film 14 of the second semi-transmissive region 13 is removed, and the semi-transmissive portion 3 is provided with other The semi-transmissive film 15 has a configuration in which the light shielding film 11 is provided in the light shielding portion 2. In other words, the semi-transmissive portion 3 having the above configuration is constituted by two semi-transmissive films 14 and 15 'the first semi-transmissive region 13 is formed by one semi-transmissive film 15 (high transmittance), and two and a half The laminated film of the light-transmitting films 14 and 15 constitutes the first semi-transmissive region 12 (low transmittance). The structure shown in Fig. 4(a) can be manufactured by, for example, the process shown in Figs. 5(a) and (b). Further, the manufacturing method of the structure shown in Fig. 4(a) is not limited to these methods. Here, the material of the semi-transmissive film 14 is set to molybdenum telluride, and the material of the light-shielding film is set to chromium. In the following description, the resist material constituting the resist layer, the etchant used for etching, the developer used for development, and the like are appropriately selected from the conventional photolithography method and the etching process. For example, the etchant is appropriately selected depending on the material constituting the film to be etched, and the developer is appropriately selected depending on the resist material to be used. As shown in Fig. 5(a), the semi-transmissive film 14 is formed on the transparent substrate 10, and the light-shielding film 11 is formed thereon, and then the semi-transmissive film 14 of the second semi-transmissive region 13 is exposed. The light shielding film 11 is patterned. Next, as shown in Fig. 5(b), the film thickness of the semi-transmissive film 14 is partially thinned by etching the semi-transmissive film 14 with the patterned light-shielding film 11 as a mask. Thereafter, -17-201011456 removes the light-shielding film 11 of the first semi-transmissive region 12. The structure shown in Fig. 4(b) can be manufactured, for example, by the process shown in Fig. 6(c). Further, the method shown in Fig. 4(b) is not limited to these methods. Here, the semi-transmissive film 14 is made of molybdenum molybdenum, the material of the semi-translucent film 15 is made of chromium oxide, and the material is made of chromium. Further, in the following description, the resist material, the etching agent used for etching, and the development used for development are appropriately selected in the past, and the user can etch the etching agent in the past. The material of the film is appropriately selected from the developer according to the resist material to be used, as shown in Fig. 6(a), and a light-shielding film 11 is formed on the transparent substrate 1A, and thereafter, The light shielding film 11 is patterned in such a manner that the semi-light-transmitting portion light film 14 is exposed. Next, as shown in (b), the semi-transmissive film 15 is integrally formed, and after the upper portion is formed at 16°, the first semi-transmissive region 12 is exposed to harden the resist (the symbol 16a in the figure). . Next, as shown in Fig. 6, the resist film 16 is developed, and the remaining resist film 16 is used as the half-transparent film 15, and then the resist film 16 is removed. The structure shown in Fig. 4(c) can be manufactured, for example, by the process shown in Fig. 7(g). Further, the method of forming shown in Fig. 4(c) is not limited to these methods. Here, the semi-transmissive film is made of molybdenum molybdenum, the material of the semi-translucent film 15 is made of chromium oxide, and the material of 11 is made of chromium. Further, in the following description, a resist liquid or the like which is a layer of the light-shielding film 11 which constitutes the material for the manufacture of the resistor (a) is formed. For example, choose to choose. The semi-transmissive film 3 is semi-transparent as shown in Fig. 6. The resist film is partially covered by the pattern (c). (a) ~ The material of the structure is 1 4 . Resistance of the agent layer 18 • 201011456 The material used for etching, the etchant used for etching, the developer used for development, etc., are appropriately selected for users who have been able to perform photolithography and etching processes in the past. For example, the etchant is appropriately selected depending on the material constituting the film to be etched, and the developer is appropriately selected depending on the resist material to be used. As shown in Fig. 7(a), the semi-transmissive film 14 is formed on the transparent substrate 1A, and the light-shielding film 11 is formed thereon. Thereafter, the semi-transmissive film 14 of the semi-transmissive portion is exposed to be shielded. The film 11 is patterned. Next, as shown in Fig. 7(b), the resist film 16 is formed in its entirety. Thereafter, the first semi-transmissive region 12 is exposed to partially cure the resist film 16 (element symbol 16a in the drawing). Next, as shown in Fig. 7(c), the resist film 16 is developed, and as shown in Fig. 7(d), the semi-transmissive film 14 is etched by using the remaining resist film 16 as a mask. As shown in Fig. 7(e), the semi-transmissive film 15 is integrally formed, and a resist film 16_1 is formed thereon. Thereafter, the region including the semi-transmissive portion is exposed to partially harden the resist film 16-1 (element symbol 16b in the drawing). Next, as shown in Fig. 7(f), the resist is developed, and as shown in Fig. 7(g), % is masked by the remaining resist film 16-1, and the semi-transmissive film 15 is etched. The light intensity distribution in the semi-transmissive portion of the multi-step dimmer of the present invention is also reflected by using the multi-step dimmer of the present invention to expose the resist film on the transferred body and undergoing a development process. The shape of the resist pattern. That is, the film thickness corresponding to the semi-transmissive portion and the film thickness of the corresponding light-shielding portion or the light-transmitting portion portion are formed on the resist film formed on the object to be transferred by using the multi-step dimming cover of the present invention. In the case of a different pattern, a resist pattern can be formed in which the resist film thickness corresponding to the developed light-transmitting portion or the light-shielding portion is set to be -19-201011456, which is 100%, and includes the corresponding semi-transmissive portion. When the region in the width direction of the resist film after development and the region where the film thickness is changed to 2% or less is a flat portion, the width of the flat portion exceeds the half-transmissive portion of the corresponding width A of the multi-step dimming cover. 50% of the width. Therefore, when the multi-step dimming cover of the present invention is used to transfer the pattern of the semi-transmissive portion onto the resist film on the transfer target, it is possible to have a flat portion having a substantially constant film thickness and to form a desired film thickness. Range of resist patterns. Thereby, it becomes easy to control the pattern size formed on the object to be transferred, and the line width precision of the pattern is improved. Further, according to the present invention, in addition to the above-described effects, the pattern of the semi-transmissive portion is compared with the conventional semi-transmissive portion (a fine pattern type multi-step dimming cover) in which a fine pattern is formed by a light-shielding film. The semi-transmissive film forming portion formed by the semi-transmissive film has a wide range of line widths, and it is easy to manage the line width when the mask is formed. Therefore, the advantages in mass production are large. Further, when the mask user considers the processing process (resist material, development condition, etching condition, etc.) to be applied, it is possible to obtain a desired transmission having a resist pattern φ for obtaining the required height. The mask of the rate. In this design, the transmittances of the two types of semi-transmissive regions included in the semi-transmissive portion can be set as desired. Further, according to the present invention, it is not necessary to prepare an exposure machine having an extremely high resolution (light NA) at the time of manufacturing the device, and even if the current exposure machine is used, the TFT channel portion can be sufficiently miniaturized, so that the manufacturing device is Great advantage. Next, an embodiment will be described in order to clarify the effects of the present invention. (Embodiment) -20- 201011456 In the pattern shown in Fig. 1, by the above method, the width of the semi-transmissive portion 3 is set to 3. 6//m, the width of the second semi-transmissive region 13 is set to 〇_8vm (the width of the first semi-transmissive region 12 is 2. 0/zm) The multi-step dimmer 1 of the semi-transmissive portion 3. In this case, the configuration of the semi-transmissive portion 3 is a structure shown in Fig. 4(b), and chromium is used as a material constituting the light-shielding film 11, and MoSi is used as a material constituting the second semi-transmissive region 13, and oxidation is used. Chromium is used as the material of the semi-transmissive film 15 constituting the laminated film constituting the first semi-transmissive region 12. In addition, the thickness of the semi-transmissive films 14 and 15 is adjusted such that the transmittance of the first semi-transmissive region 12 is 45% and the transmittance of the second semi-transmissive region 13 is 25%. Further, the transmittance of the semi-transmissive films 14 and 15 herein refers to the transmittance inherent to the film, and is not the effective transmittance described later. The curve of the effective transmittance Τα when the resist film on the transfer target is patterned by using such a multi-step dimmer is shown in Fig. 8 (a) and (b) (Fig. 8). (b) shows a partial enlargement of Fig. 8(a)). φ can give the effective transmittance as the range of the residual film that directly governs the resist pattern actually formed. By managing the residual film by the management of the effective transmittance, even in the case of a pattern having a narrow width, the resist pattern of the residual film can be stably obtained. Here, the effective transmittance means that the transmittance of the exposure light that has actually passed through the mask is a transmittance at which the transmittance of the light-transmitting portion (the resolution of the exposure machine is sufficiently wide) is 100%. . Once the pattern width becomes smaller, it will be affected by the diffraction, and the rate will be changed by the adjacent pattern to reflect the transmittance of the influence. Since the effective transmission is considered in addition to the transmittance of the film, it is also an indicator for accurately reflecting the condition of the residual film, and is an indicator for the management of residual film defects. Further, the transmittance having the largest enthalpy portion in the intensity distribution transmitted through the semi-transmissive portion can be set as the reference 实 for effective transmission. This is because there is a correlation with the minimum enthalpy of the residual film enthalpy generated in the semi-transmissive portion when a resist pattern of a positive resist is formed on the transfer using, for example, the reticle. For such range management, for example, when the channel region width of the thin film transistor is 5 or less, it is particularly effective. As means for measuring the above-described effective transmittance, it is preferable to reproduce an exposure condition which is approximately caused by the exposure machine. As such a device, for example, the device shown in Fig. 9 can be mentioned. This device is an illumination optical system 22 that mainly emits light from the light source 21 and the future light source 21 to the photomask 23, a pair of objective lens systems 24 that image the light transmitted through the light 23, and an image obtained by the objective lens system 24. The imaging means 25 is formed. The light source 21 emits a light beam of a predetermined wavelength, and for example, a halogen lamp metal halide lamp, a UHP lamp (ultra-high pressure mercury lamp), or the like can be used. For example, a light source having a spectral characteristic similar to that of an exposure machine using a mask can be used. The illuminating optical system 22 guides light from the light source 21 to illuminate the reticle 23 with light. The illumination optical system 22 is provided with an aperture mechanism (aperture aperture 27) in order to change the number of apertures (NA). Preferably, the illumination optical system is provided with a viewing aperture 26 for adjusting the illumination range of the light in the mask 23. The light that has passed through the illuminating optical system 22 is irradiated to the reticle 23 held by the -22-201011456 23a by the masking rate as the light body resistance or the white hood. This illumination optical system 22 is disposed in the housing 33. The mask 23 is held by the mask holder 23a. In the mask holder 23a, the main plane of the mask 23 is set to be approximately vertical, and the lower end portion and the side edge portion of the mask 23 are supported, and the mask 23 is tilted and fixed. . The mask holder 23a is made to be large in size (for example, a main plane of 1220 mm x 140 legs, a thickness of 13 faces, or the like), and a mask 23 of various sizes. . Further, the term "about vertical" means that the angle of the vertical direction indicated by Θ in Fig. 9 is within about 10 degrees. Light that is incident on the mask 23 is transmitted through the mask 23 to the objective lens system 24. The objective lens system 24 is configured, for example, by a first group (simulator lens) 24a that is incident on the light transmitted through the mask 23, and is infinitely corrected to be parallel light; The second group (imaging lens) 24b images the light beam that has passed through the first group. The simulator lens 24a φ is provided with an aperture mechanism (aperture stop 27-1) to make the number aperture (ΝΑ) variable. The light beam that has passed through the objective lens system 24 is received by the imaging means 25. The pair of objective lens systems 24 are disposed in the housing 33-1. This imaging means 25 captures an image of the reticle 23. An imaging element such as a CCD can be used as the imaging means 25. In this apparatus, since the number of apertures of the illumination optical system 22 and the number of apertures of the objective lens system 24 are variable, the number of pairs of the objective lens systems 24 of the number of apertures of the illumination optical system 22 can be changed.値 aperture ratio, ie -23- 201011456 S igma 値 (σ: coherence (c 〇herence)). Further, in this apparatus, the calculation means 31 is provided for performing image processing, calculation, comparison with a predetermined threshold value, display, and the like with respect to the photographed image obtained by the imaging means 25, and the control means 34. There is a display means; and a moving operation means 35 is for changing the position of the frame 33. Therefore, it is possible to use the obtained photographic image or the light intensity distribution obtained therefrom to perform a predetermined calculation by a control means, and to obtain a photographic image, or a light intensity distribution and transmittance under conditions in which other exposure light is used. In the device having such a configuration as shown in Fig. 9, the NA and σ値 are made variable, and the light source of the light source can be changed, so that the exposure conditions of various exposure machines can be reproduced. In the case of an exposure apparatus that easily approximates a large-sized photomask for a liquid crystal display device or the like, irradiation light having a uniform intensity of light generated by i-line, h-line, and g-line is used, and is applicable to an exposure optical system. NA is 0. At about 0 8 , the NA ratio of the illuminating system to the pair is 0. 8 conditions. In view of the above, in the present invention, it is preferable that the mask is actually obtained according to the shape of the pattern and the semi-transparent film to be used (preferably, also considering the wavelength distribution of the light source of the exposure machine, the condition of the optical system). The transmittance (effective transmittance) is used to calculate and determine the transmittance of the semi-transparent film to be used (transmission ratio in a sufficiently wide area) to design the mask. As can be seen from Fig. 8 (a) and (b), in the portion of the above-mentioned -24 - 201011456 semi-transmissive portion of the corresponding width A of the multi-step dimming mask of the effective transmittance curve (light transmission intensity distribution curve), When the light transmittance in the width direction of the semi-transmissive portion is set to 100%, the ratio of the region (flat region) in which the amount of change in transmittance is 2% or less is more than 50%. Therefore, considering the use of the multi-step dimmer to form a resist pattern, the following resist pattern can be formed: the developed resist film thickness corresponding to the light-transmitting portion or the light-shielding portion is set to 100%, corresponding to semi-transparent The center of the region of the light portion has a flat portion in which the film thickness of the resist film after development is changed to 2% or less, and the width thereof exceeds 50% of the width of the semi-transmissive portion of the corresponding width A. (Comparative Example) In the pattern shown in Fig. 1, the width of the semi-transmissive portion 3 was set to 3. A multi-step dimming cover was produced in the same manner as in the example except that the semi-transmissive portion (MoSi film) having a transmittance of 40% was formed at 6 μm. Fig. 8(a) and (b) show the effective transmittance Τα curve when the resist film on the transfer target is patterned by such a multi-step dimmer. As is clear from Fig. 8 (a) and (b), the resist pattern in the shape of the semi-transmissive portion in which the φ corresponds to the width A in the multi-step dimming cover has no flat region. Next, an example of a TFT substrate manufacturing process using the multi-step mask of the present invention will be described using Figs. 10 and 11. A gate gold film is formed on the glass substrate 41, and the gate 42 is formed by a photolithography process using a photomask. Next, a gate insulating film 43, a first semiconductor film 44 (a-Si), a second semiconductor film 45 (N + a-Si), a source-drain metal film 46, and a positive-type photoresist film 47 are formed. (Fig. 10(a)). Next, as shown in FIG. 10(b)-25-201011456, the positive resist film 47 is exposed and developed using a multi-step dimmer 50 having a light shielding portion 51, a light transmitting portion 52, and a semi-light transmitting portion 53. The TFT channel portion and the source drain formation region and the data line formation region are covered, and the first resist pattern 47a having the channel portion formation region thinner than the source drain formation region is formed. Then, as shown in Fig. 10(c), the source/deuterium metal film 46, the second semiconductor film 45, and the first semiconductor film 44 are etched by using the first resist pattern 47a as a mask. Next, as shown in Fig. 1(a), a thin resist 9 film of the channel portion forming region is removed by ashing by oxygen to form a second resist pattern 47b. Next, as shown in FIG. 1(b), the source/drain electrodes 46a and 46b are formed by etching the source-drain metal film 46 with the second resist pattern 47b as a mask, and then etching the second The semiconductor film 45, finally, as shown in FIG. 1(c), the remaining second resist pattern 47b is peeled off. Thus, once the multi-step dimming cover of the present invention is used, the TFT pattern is transferred to the resist. With the film, it is possible to form a resist pattern having a flat portion having a predetermined film thickness and a desired film thickness range, so that it is easy to control the size of the TFT pattern formed on the transferred g body, and the line width precision of the TFT pattern is improved. . The present invention is not limited to the above embodiment, and can be implemented as appropriate. The number, the size, the processing order, and the like of the members in the above-described embodiments can be variously modified and implemented within the scope of the effects of the present invention. Further, various modifications can be made without departing from the scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view showing a plane -26-201011456 of a multi-step dimmer according to an embodiment of the present invention. Fig. 2 is a view showing a light transmission intensity distribution curve of a half-light-transmitting portion of a multi-step dimming cover according to an embodiment of the present invention with respect to a wavelength of 365 nm to 436 nm. Fig. 3(a) is a view showing a transmittance curve, and Fig. 3(b) is a view showing a pattern including a light shielding portion and a semi-light transmitting portion. Fig. 4 (a) to (c) are diagrams each showing a configuration example of a multi-step dimming cover according to an embodiment of the present invention. Fig. 5 (a) and (b) are views for explaining a manufacturing process of the ❹ structure shown in Fig. 4(a). Fig. 6 (a) to (c) are views for explaining a manufacturing process of the configuration shown in Fig. 4 (b). Fig. 7 (a) to (g) are diagrams for explaining a manufacturing process of the configuration shown in Fig. 4 (c). Fig. 8(a) is a view showing the effective transmittance when the resist film on the transfer target is patterned to be printed by using the multi-step dimming cover of the embodiment of the present invention and the conventional multi-step dimming cover. Fig. 8(b) is a view showing a part of the enlargement. Fig. 9 is a schematic diagram showing the configuration of a device for measuring the effective transmittance. Fig. 10 (a) to (c) are views for explaining a manufacturing process of a TFT substrate using a multi-step dimming mask according to an embodiment of the present invention. Fig. 11 (a) to (c) are diagrams for explaining a process performed by the process shown in Fig. 10 (c). Fig. 12 is a view showing a semi-transmissive portion of the conventional multi-step dimming cover, -27-201011456, and a pair of wavelengths of 365 nm to 436 nm, showing a pair of wavelengths of 365 nm to 436 nm in the past. A map of the intensity distribution curve. A diagram of the light transmission intensity distribution curve of the semi-transmissive light in other examples of the multi-step dimmer.
1、50 多階調光 2、51 遮光部 3 ' 53 半透光部 4 > 52 透光部 10 透明基板 12 第1半透 13 第2半透 14、15 半透光膜 16 ' 16-1 阻劑膜 16a、 16b 硬化的阻 21 光源 22 照射光學 23 光罩 23a 遮罩保持 24 對物透鏡 2 4a 第1群（ 24b 第2群（ 25 攝像手段 26 視野光闌 區域 區域 劑膜 系 具 系 模擬器透鏡） 成像透鏡） -28- 2010114561, 50 multi-step dimming 2, 51 shading portion 3 ' 53 semi-transmissive portion 4 > 52 light transmitting portion 10 transparent substrate 12 first semi-transmissive 13 second semi-transparent 14 and 15 semi-transparent film 16 ' 16- 1 Resist film 16a, 16b Hardened resistor 21 Light source 22 Irradiation optics 23 Photomask 23a Mask holding 24 Optic lens 2 4a Group 1 (24b Group 2 (25 imaging means 26 field of view area area film system) Analog lens) imaging lens) -28- 201011456
27 > 27-1 孔 徑 光 闌 31 演 算 手 段 32 顯 示 手 段 33 ' 33-1 框 體 34 控 制 手 段 35 移 動 操 作 手 段 41 玻 璃 基 板 42 閘 極 43 閘 極 絕 緣 膜 44 第 1 半 導 體 膜 45 第 2 半 導 體 膜 46 源 極 汲 極 用 金屬膜 4 6a' 46b 源 極 /汲極 47 正 型 光 阻 膜 47a 第 1 阻 劑 圖 案 47b 第 2 阻 劑 圖 案 P 平 坦 區 域 A 寬 度 遮 光 部 B 半 透 光 部 Θ 離 鉛 直 的 角 度 Ta 實 效 透 過 率 -29-27 > 27-1 Aperture stop 31 Calculation means 32 Display means 33 ' 33-1 Frame 34 Control means 35 Movement operation means 41 Glass substrate 42 Gate 43 Gate insulating film 44 First semiconductor film 45 Second semiconductor film 46 source-drain metal film 4 6a' 46b source/drain 47 positive-type photoresist film 47a first resist pattern 47b second resist pattern P flat area A width light-shielding part semi-transmission part Θ Angle Ta Effective Transmittance -29-