TWI659262B - Method of repairing a photomask, method of manufacturing a photomask, photomask and method of manufacturing a display device - Google Patents

Abstract

The present invention provides a method for efficiently correcting a phase shift film under stable conditions and related technologies. A method for correcting a photomask, wherein the aforementioned photomask is provided on a transparent substrate with a light-transmitting portion, a light-shielding portion, and a translucent portion having a width d1 (μm) formed by patterning a light-shielding film and a semi-transparent film, respectively. Those who transfer patterns, and the method of correcting the aforementioned mask has the following steps: a step of determining a defect generated in the semi-transmissive portion, and forming a correction film at the position of the identified defect and forming a correction having a width d2 (μm) The step of forming a correction film for the translucent portion, where d1 <3.0, the translucent film has a transmittance T1 (%) for a representative wavelength included in the exposed light, and has a phase shift of approximately 180 for the light of the representative wavelength The phase shift characteristics of the correction film have a transmittance T2 (%) for the representative wavelength, and a phase shift characteristic that shifts the phase of light of the representative wavelength by approximately 180 degrees, and T2> T1 and d2 <d1, Or T2 <T1 and d2> d1.

Description

Correction method of photomask, method of making photomask, method of making photomask and display device

The present invention relates to a repair method for a photomask that is favorably used for a display device represented by a liquid crystal display or an organic EL (Electro Luminescence) display.

Patent Document 1 describes a method for correcting a missing defect (white defect) or a residual defect (black defect) in a semi-transmissive portion of a multi-step mask. Here, the correction film is formed so that the phase difference between the light-transmitting part of the transparent substrate and the correction part on which the correction film is formed with respect to i-ray to g-ray wavelength light becomes 80 degrees or less.

In addition, Patent Document 2 describes a photomask provided with a pattern for transfer formed by patterning a semi-transmissive film and a light-shielding film formed on a transparent substrate, respectively. The optical film shifts the phase of light having a representative wavelength in the wavelength range of i-rays to g-rays by approximately 180 degrees, and has a transmittance T1 (%) for the representative wavelength. The light-shielding film has The translucent film has a lower transmittance T1 (%) and a lower transmittance T2 (%). The transfer pattern has a main pattern including a diameter W1 (μm) that exposes the transparent portion of the transparent substrate. The auxiliary pattern near the main pattern and including the width d (μm) of the semi-transmissive portion of the semi-transparent film on the transparent substrate, and the auxiliary pattern arranged in the transfer pattern to form the main pattern and the auxiliary pattern In a region other than the region, at least a light-shielding portion of the light-shielding film is formed on the transparent substrate, and W1, T1, and d have a specific relationship. [Prior Art Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2010-198006 [Patent Document 2] Japanese Patent Laid-Open No. 2016-024264

[Problems to be solved by the invention]

Currently, display devices including liquid crystal display devices or EL display devices are expected to be brighter and save power, and display performance such as high-definition, high-speed display, and wide viewing angles to be improved.

For example, in the case of a thin film transistor (TFT) used in the above display device, if the contact holes formed in the interlayer insulating film among the plurality of patterns constituting the TFT do not have a pattern that reliably connects the upper and lower patterns, Action cannot guarantee correct action. On the other hand, for example, in order to increase the aperture ratio of a liquid crystal display device as much as possible, to make it a bright, power-saving display device, and to increase the density of a display device such as a sufficiently small contact hole diameter, a hole pattern is desired. The diameter is also reduced (for example, less than 3 μm). For example, a hole pattern having a diameter of 0.8 μm or more and 2.5 μm or less is required, and a hole pattern having a diameter of 2.0 μm or less is required. Specifically, formation of a pattern having a diameter of 0.8 to 1.8 μm has become a problem.

In addition, in the field of photomasks for the manufacture of semiconductor devices (LSIs) that have a higher integration degree and a significantly more refined pattern compared to display devices, they are present in exposure devices in order to obtain higher resolution. It is suitable for the optical system with a higher numerical aperture (NA) (for example, 0.2 or more), and the reason for the short wavelength development of the exposed light. As a result, KrF or ArF excimer lasers (single wavelengths of 248 nm and 193 nm, respectively) tend to be widely used in this field.

On the other hand, in the field of lithography for display device manufacturing, it is not common to apply the above-mentioned method in order to improve the resolution. For example, the numerical aperture (NA) of the optical system of the exposure device used in this field is about 0.08 to 0.15. Furthermore, i-rays, h-rays, or g-rays are often used as the exposure light source, and a wide-wavelength light source including these is mainly used to obtain a light amount for irradiating a large area (for example, a quadrangle having a side of 300 to 2000 mm) Therefore, there is a strong tendency to value production efficiency or cost.

Moreover, also in the manufacture of a display device, the demand for the miniaturization of a pattern as mentioned above becomes high. Here, there are several problems in directly applying the technology for manufacturing a semiconductor device to the manufacturing of a display device. For example, the conversion to a high-resolution exposure device with a high NA (numerical aperture) requires a large investment, and integration with the price of a display device cannot be obtained. In addition, for changing the exposure wavelength (using a short wavelength like ArF excimer laser at a single wavelength), if it is suitable for a display device with a large area, in addition to the reduction in production efficiency, a considerable investment is still required. It's bad. That is, on the one hand, the miniaturization of a pattern not previously available is pursued, and on the other hand, the cost or efficiency of the existing advantages cannot be lost, which becomes a problem of a mask for manufacturing a display device.

In addition, the multi-step mask described in Patent Document 1 is well known as a mask for improving production efficiency in the field of display device manufacturing. For example, by using a multi-level (for example, three-level) pattern in which a half-tone portion (semi-transparent portion) is added to an existing binary mask having a light-shielding portion and a light-transmitting portion as a transfer pattern, the display device is used. In the manufacturing steps, the number of repetitions of the photolithography step can be reduced. If this photomask is used, a photoresist pattern having a three-dimensional structure with a different residual film thickness of the photoresist depending on the region can be formed on the object to be transferred in one exposure. When the photoresist pattern is used as an etching mask for the underlying film, the film is reduced by ashing, etc., and functions as a new-shaped etching mask. Therefore, it can be equivalent to a single exposure step. Patterning of 2 layers.

The defect correction method of the mask described in Patent Document 1 is suitable for a defect generated in a semi-transmissive portion of a multi-step mask. In this Patent Document 1, the phase difference between the correction portion having the correction film formed on the transparent substrate and the light transmission portion is 80 degrees or less. Furthermore, it is described that the phase difference between the correction portion and the normal translucent portion is 80 degrees or less.

On the other hand, Patent Document 2 describes a photomask having a main pattern including a light-transmitting portion, an auxiliary pattern including a semi-light-transmitting portion disposed near the main pattern, and a light-shielding portion formed in a region other than the main pattern. It is described that the photomask can control the mutual interference of the light transmitted through the exposure of both the main pattern and the auxiliary pattern, and greatly improve the spatial image of the transmitted light. In the auxiliary pattern of this photomask, a semi-transmissive film that shifts the phase of the exposed light by approximately 180 degrees is used differently from the above-mentioned Patent Document 1. In addition, the photomask can be advantageously used when fine isolated holes are stably formed in a transfer target such as a display panel substrate.

In this way, it is effective to arrange an auxiliary pattern of an appropriate design that is not analyzed directly on the transfer target with respect to the main pattern, in order to improve the transferability of the main pattern. However, such an auxiliary pattern is a fine pattern that is delicately designed, and the handling of the case where a defect occurs in its position becomes a problem.

Generally speaking, it is extremely difficult to make the occurrence of pattern defects zero during the manufacturing process of the photomask. For example, due to pinholes or foreign matter (particles) in the film, defects such as missing defects (hereinafter also referred to as white defects) or residual defects (hereinafter also referred to as black defects) may occur. In such a case, a step of detecting a defect by inspection and repairing the defect by a correction device is provided. As a method of correction, in general, a correction film is deposited for white defects, and the remaining part is removed by irradiation with energy rays, and a correction film is deposited as necessary. A FIB (Focused Ion Beam) device or a laser CVD (Chemical Vapor Deposition) device can be used to correct white defects and black defects.

In addition, according to the research by the present inventors, even if the above-mentioned method is used, a problem that it is difficult to correct due to the type of the translucent film is generated. For example, in order to correct a defect generated in a translucent film (ie, a phase shift film) having a function of shifting the phase of the exposed light, it is desirable to develop a correction film having the same optical characteristics. Here, the term “phase-shifting film used in a photomask” refers to a person having a phase-shift effect that reverses the phase of light of a representative wavelength of light by approximately 180 degrees, and has a specific transmission for the light of the representative wavelength. Rater.

Therefore, it is also expected that in the correction film, the optical characteristics of the phase shift film are referred to, and the correction film is formed to be substantially equivalent to the optical characteristics.

For example, a case where a correction film is formed in a laser CVD apparatus will be described as an example. First, regarding the defect obtained by the detection, a correction target region to be corrected is determined. The correction target area may be a white defect generated in a semi-transmissive film (hereinafter, also referred to as a normal film) or a white defect formed by removing a black defect. A local correction film (also referred to as a CVD film) is formed in the correction target region by a laser CVD method.

At this time, a raw material gas serving as a raw material of the correction film is supplied to the surface of the photomask to form a raw material gas atmosphere. As a raw material of the correction film, a metal carbonyl compound is preferably used. Specifically, chromium hexacarbonyl (Cr (CO) 6), molybdenum carbonyl (Mo (CO) 6), tungsten carbonyl (W (CO) 6), and the like are exemplified. As the correction film of the photomask, chromium hexacarbonyl having high chemical resistance is preferably used.

For example, when chromium hexacarbonyl is used as the raw material of the correction film, chromium hexacarbonyl (Cr (CO) 6) is sublimated by heating and introduced together with the carrier gas (Ar gas, etc.) to the correction target portion of the mask . If laser light is radiated into the atmosphere of the raw material gas, the raw material gas is decomposed due to the thermal / light energy reaction of the laser, and a product is deposited on the substrate, so a correction film mainly composed of chromium is formed.

However, in the correction of the phase shift film, not only the transmittance of the correction film deposited on the correction target area is within a desired range, but also the phase shift characteristics (approximately 180 degrees) must be simultaneously satisfied, and the conditions are narrow.

Furthermore, it is more difficult to correct a phase shift film having a relatively high transmittance (for example, 20% or more). The reason is that the transmittance becomes higher, and the film thickness of the correction film becomes smaller. As a result of the slight film thickness variation, the transmittance variation ratio becomes larger, making it difficult to meet specific specifications.

As described above, the present inventors believe that there are many problems in the correction of the phase shift film, and it is necessary to propose a method of performing the correction efficiently under stable conditions.

Therefore, an object of the present invention is to provide a method for efficiently correcting a phase shift film under stable conditions and a related technique. [Technical means to solve the problem]

(First aspect) The first aspect of the present invention is a method for correcting a photomask, wherein the photomask is provided on a transparent substrate with a transparent film formed by patterning a light-shielding film and a translucent film, respectively. Those who transfer patterns for the light part, the light-shielding part, and the translucent part with a width d1 (μm), and the method for correcting the aforementioned photomask has the following steps: a step of determining the defects generated in the translucent part, and A correction film forming step of forming a correction film and forming a correction translucent portion having a width d2 (μm) at the determined positions of the above defects, where d1 <3.0, and the translucent film is a representative wavelength of light included in the exposure It has a transmittance T1 (%), and has a phase shift characteristic that shifts the phase of the light of the representative wavelength by approximately 180 degrees. The correction film has a transmittance T2 (%) of the representative wavelength, and has the representative The phase shift characteristic of the phase shift of light with a wavelength of approximately 180 degrees, and T2> T1 and d2 <d1, or T2 <T1 and d2> d1. (Second aspect) The second aspect of the present invention is a method for correcting a photomask as described in the first aspect, wherein the widths d1 and d2 are dimensions that are not analyzed by an exposure device that exposes the photomask. (Third aspect) The third aspect of the present invention is the method for correcting the photomask according to the first or second aspect, wherein the semi-transmissive portion is disposed on the light-transmitting portion through the light-shielding portion. Near the ministry. (Fourth aspect) The fourth aspect of the present invention is a method for correcting a photomask according to any of the first to third aspects, which is characterized in that T2> T1, and the difference between T1 and T2 is The range is 2 to 45. (Fifth aspect) The fifth aspect of the present invention is a method for correcting a photomask according to any one of the first to fourth aspects, characterized in that d2 <d1, and the difference between d1 and d2 is 0.05 to 2.0. (Sixth aspect) The sixth aspect of the present invention is a method for correcting a photomask according to any one of the first to fifth aspects, which is characterized in that before or after the correction film forming step, A light-shielding supplementary film is formed at a position adjacent to the correction translucent portion. (Seventh aspect) The seventh aspect of the present invention is a method for correcting a photomask according to any one of the first to sixth aspects, characterized in that the semi-transmissive portion intersects the light-shielding portion. The auxiliary pattern is arranged in the vicinity of the light-transmitting portion and is configured to increase the depth of focus by changing the light intensity distribution of the exposed light transmitted through the light-transmitting portion on the object to be transferred. (Eighth aspect) The eighth aspect of the present invention is a method for correcting a photomask according to any one of the first to seventh aspects, and is characterized in that the above-mentioned transfer pattern system to which the above-mentioned correction method is applied. Those for forming a hole pattern on a body to be transferred include: a main pattern having a diameter W1 (μm) including the above-mentioned light transmitting portion; an auxiliary pattern having a width d1 (μm) and being disposed above the above through the light shielding portion The vicinity of the main pattern includes the semi-transmissive portion; and a light-shielding portion that surrounds the main pattern and the auxiliary pattern in an area excluding the main pattern and the auxiliary pattern. (Ninth aspect) The ninth aspect of the present invention is a method for correcting a photomask according to the eighth aspect, wherein the auxiliary pattern is a polygonal band or a polygonal band surrounding the main pattern through the light shielding portion or Area of circular band. (Tenth aspect) The tenth aspect of the present invention is a method for correcting a photomask according to the eighth or ninth aspect, characterized in that the center of the width of the main pattern and the center of the width of the auxiliary pattern are When the distance is set as the distance P1, and when the distance between the width center of the main pattern and the width center of the correction auxiliary pattern including the correction translucent portion is set as P2, P1 = P2. (Eleventh aspect) The eleventh aspect of the present invention is a method for correcting a photomask according to any one of the first to tenth aspects, wherein the pattern for transfer is a pattern for manufacturing a display device. (Twelfth aspect) The twelfth aspect of the present invention is a method for manufacturing a photomask, which includes a method for correcting a photomask according to any one of the first to eleventh aspects. (Thirteenth aspect) The thirteenth aspect of the present invention is a photomask, which is a transparent substrate having a transfer pattern including a light-transmitting portion, a light-shielding portion, and a semi-light-transmitting portion, which is characterized in that: The printing pattern includes: the light-transmitting portion exposing the transparent substrate; the semi-light-transmitting portion formed by forming a translucent film with a width d1 (μm) on the transparent substrate; and the light-shielding portion, which It is located in an area excluding the light-transmitting portion and the semi-light-transmitting portion; and includes a modified semi-light-transmission formed by forming a correction film having a width d2 (μm) containing a material different from that of the semi-transparent film on the transparent substrate And the d1 <3.0, the translucent film has a transmittance T1 (%) for a representative wavelength included in the exposed light, and has a phase shift characteristic that shifts the phase of the light of the representative wavelength by approximately 180 degrees The correction film has a transmittance T2 (%) for the representative wavelength, and has a phase shift characteristic that shifts the phase of the light of the representative wavelength by approximately 180 degrees, and T2> T1 and d2 <d1, or T2 < T1 and d2 d1. (14th aspect) The 14th aspect of the present invention is a photomask characterized in that it has a transfer pattern including a light transmitting portion, a light shielding portion, and a translucent portion on a transparent substrate, and the above-mentioned transfer The printing pattern has a normal transfer pattern and a corrected transfer pattern. The normal transfer pattern includes: the light-transmitting portion, which exposes the transparent substrate; and the semi-light-transmitting portion, which is on the transparent portion. A semi-transmissive film is formed on the substrate, and the light-shielding portion is arranged near the light-transmitting portion and has a width d1 (μm); and the light-shielding portion is located between the light-transmitting portion and the semi-light-transmitting portion. The above-mentioned modified transfer pattern includes: the light-transmitting portion exposing the transparent substrate; and a modified semi-light-transmitting portion that forms a material containing a material different from the semi-transparent film on the transparent substrate. It is formed by a correction film, and is arranged near the light transmitting portion through the light shielding portion or the supplementary light shielding portion, and has a width d2 (μm); and the light shielding portion is located between the light transmitting portion and the repairing portion. Areas other than the translucent portion; and d1 <3.0, the translucent film has a transmittance T1 (%) for a representative wavelength included in the exposed light, and has a phase shift of the light of the representative wavelength by approximately 180 The phase shift characteristics of the degree of correction, the correction film has a transmittance T2 (%) for the representative wavelength, and has a phase shift characteristic that shifts the phase of the light of the representative wavelength by approximately 180 degrees, and T2> T1 and d2 <D1, or T2 <T1 and d2> d1. (Fifteenth aspect) The fifteenth aspect of the present invention is a photomask, which is characterized in that it has a transfer pattern including a light transmitting portion, a light shielding portion, and a semi-light transmitting portion on a transparent substrate. The printing pattern includes: a main pattern with a diameter of W1 (μm) including the above-mentioned light-transmitting portion; an auxiliary pattern with a width of d1 (μm), which is formed by forming a translucent film on the transparent substrate and interposing the light-shielding portion It is disposed near the main pattern and includes the translucent portion; and the light-shielding portion is located in an area excluding the main pattern and the auxiliary pattern; and is formed on the transparent substrate to include a material different from the translucent film. The material is a correction film made of a material, and is arranged near the main pattern through the light-shielding portion, and includes a correction auxiliary pattern that corrects the width d2 (μm) of the translucent portion, and d1 <3.0. The translucent film It has a transmittance T1 (%) for the representative wavelength included in the exposed light, and has a phase shift characteristic that shifts the phase of the above-mentioned representative wavelength light by approximately 180 degrees. The correction film is for the above-mentioned generation. The table wavelength has a transmittance T2 (%), and has a phase shift characteristic that shifts the phase of the light of the representative wavelength by approximately 180 degrees, and T2> T1 and d2 <d1, or T2 <T1 and d2> d1. (Sixteenth aspect) The sixteenth aspect of the present invention is a photomask characterized in that it has a transfer pattern including a light transmitting portion, a light shielding portion, and a semi-light transmitting portion on a transparent substrate. The printing pattern has a normal transfer pattern and a modified transfer pattern. The normal transfer pattern includes: a main pattern with a diameter of W1 (μm) including the above-mentioned light transmitting portion; a width of d1 (μm) The auxiliary pattern is formed by forming a semi-transmissive film on the transparent substrate, and is disposed near the main pattern through the light-shielding portion, and includes the semi-light-transmitting portion; and the light-shielding portion, which Areas other than patterns and auxiliary patterns; The above-mentioned modified transfer patterns include: a main pattern with a diameter of W1 (μm) including the above-mentioned light transmitting portion; a modified auxiliary pattern with a width d2 (μm) of the above-mentioned transparent substrate A correction film including a material different from the above-mentioned semi-transparent film is formed, and is arranged near the main pattern through the light-shielding portion or the supplementary light-shielding portion, and includes a modified semi-light-transmitting portion; It is located in an area excluding the main pattern and the correction auxiliary pattern; and d1 <3.0, the translucent film has a transmittance T1 (%) for a representative wavelength included in the exposed light, and has the representative The phase shift characteristic of a phase shift of light of a wavelength of approximately 180 degrees. The correction film has a transmittance T2 (%) for the representative wavelength, and a phase shift of approximately 180 degrees of a phase shift of the light of the representative wavelength. Shift characteristics, and T2> T1 and d2 <d1, or T2 <T1 and d2> d1. (Seventeenth aspect) The seventeenth aspect of the present invention is the photomask according to the fifteenth or sixteenth aspect, wherein the distance between the width center of the main pattern and the width center of the auxiliary pattern is set as For the distance P1, when the distance between the width center of the main pattern and the width center of the correction auxiliary pattern is set to P2, P1 = P2. (18th aspect) The eighteenth aspect of the present invention is a photomask according to any one of the fifteenth to seventeenth aspects, wherein the auxiliary pattern has a periphery surrounding the main pattern through the light shielding portion. The shape contained in the area of a polygonal or circular band. (Nineteenth aspect) The nineteenth aspect of the present invention is the photomask according to the fifteenth aspect, wherein the auxiliary pattern of the width d1 (μm) constitutes eighth surrounding the main pattern through the light-shielding portion. As a part of the area of the rectangular band, the correction auxiliary pattern has the shape contained in the area of the octagonal band. (Twenty aspect) The twentieth aspect of the present invention is a photomask according to any one of the thirteenth to nineteenth aspects, wherein the semi-transmissive portion is disposed on the above through the light shielding portion. And an auxiliary pattern for increasing the depth of focus of a transfer image formed on the object to be transferred with respect to the light exposed through the light-transmitting portion in the vicinity of the light-transmitting portion. (21st aspect) The 21st aspect of the present invention is a photomask according to any one of the 13th to 20th aspects, wherein the widths d1 and d2 are exposure means for exposing the photomask. The size to be parsed. (Twenty-second aspect) The twenty-second aspect of the present invention is the photomask according to any one of the thirteenth to twenty-first aspects, wherein the transfer pattern is formed in a portion that is in contact with the correction translucent portion. Adjacent positions are provided with a supplementary light-shielding portion including a light-shielding supplementary film. (Twenty-third aspect) The twenty-third aspect of the present invention is a photomask according to any one of the thirteenth to twenty-second aspects, characterized in that T2> T1, and the difference between T1 and T2 is 2 to 45. Range. (Twenty-fourth aspect) The twenty-fourth aspect of the present invention is a photomask according to any one of the thirteenth to twenty-third aspects, characterized in that d2 <d1, and the difference between d1 and d2 is 0.05 to 2.0. . (Twenty-fifth aspect) The twenty-fifth aspect of the present invention is a photomask according to any one of the thirteenth to twenty-fourth aspects, wherein the transfer pattern is used on a target to be transferred. Those who form a hole pattern. (26th aspect) The 26th aspect of the present invention is a method for manufacturing a display device, which includes the following steps: Using a photomask according to any of the 13th to 25th aspects described above, i-rays, The exposure light of either h-ray or g-ray is irradiated onto the transfer pattern, and pattern transfer is performed on the object to be transferred. [Effect of the invention]

According to the present invention, a method for efficiently correcting a phase shift film under stable conditions and a related technique can be provided.

[Mask for Correction] A photomask (hereinafter, photomask 1) as an aspect of a correction method to which the present invention is applied is illustrated in FIGS. 1 (a) and 1 (b). In addition, the symbols are only marked for the first-timers and will be omitted later.

The photomask is provided on the transparent substrate 10 with a transfer pattern having a light-transmitting portion 4, a light-shielding portion 3, and a semi-light-transmitting portion 5 formed by patterning the light-shielding film 12 and the semi-light-transmitting film 11 respectively.

In addition, the "transfer pattern" referred to in the present case refers to a pattern designed based on a component obtained by using a photomask, and all are referred to as those who are subject to the following amendments according to the context of this document, or The corrected transfer pattern obtained by the correction.

The mask I shown in FIG. 1 (a) includes a main pattern 1 and an auxiliary pattern 2 arranged near the main pattern.

In the photomask I, the main pattern includes a translucent portion exposing the transparent substrate, and the auxiliary pattern includes a translucent portion having a translucent film formed on the transparent substrate and having a width d1. In addition, a region other than the main pattern and the auxiliary pattern and surrounding the main pattern and the auxiliary pattern becomes a light-shielding portion where at least a light-shielding film is formed on the transparent substrate. Here, the light-shielding portion surrounding the main pattern and the auxiliary pattern includes a region adjacent to the main pattern and surrounding the main pattern, and a region adjacent to the auxiliary pattern and surrounding the auxiliary pattern as shown in FIG. 1. Shading section. That is, in the mask I, a light-shielding portion including a region other than a region where the main pattern and the auxiliary pattern are formed is formed. In addition, the transfer pattern referred to here refers to a transfer pattern having the above-mentioned shape in the design, and does not change the shape locally due to the occurrence of a defect (for example, when the light-shielding portion surrounding the main pattern is partially interrupted, etc.) ) Except. As shown in FIG. 1 (b), in the photomask I, the light-shielding portion is a light-shielding portion in which a semi-light-transmitting film and a light-shielding film are laminated on a transparent substrate, but may be only a light-shielding film. The translucent film has a phase shift characteristic that shifts the phase of the light used for exposure when the mask is exposed, preferably light having a representative wavelength in the wavelength range of i-rays to g-rays, by approximately 180 degrees, and It has a transmittance T1 (%) for the above-mentioned representative wavelength.

The light-shielding film of the mask I has an optical density OD (Optical Density) of OD ≧ 2, preferably OD ≧ 3, for the representative wavelength described above.

The main pattern of the photomask I may be a pattern of holes formed in a body to be transferred (a panel of a display device, etc.), and its diameter W1 is preferably 4 μm or less. The transfer of a fine hole pattern of this size, which is required to realize a high-quality display device, is difficult for the existing binary masks. However, the mask I is designed to control and utilize the interference effect of light to achieve excellent transfer performance.

Here, the auxiliary pattern including the semi-light-transmitting portion is formed in the vicinity of the light-transmitting portion and a position where a light-shielding portion is interposed between the light-transmitting portion, so that the light exposed through the light-transmitting portion and exposed above is formed The intensity distribution of light on the body to be transferred is useful for those who are favorable for changing the direction of transfer. The change in the light intensity distribution, for example, makes the peak of the light intensity distribution formed on the object to be transferred by the light transmitted through the light-transmitting portion higher, and increases the depth of focus DOF (Depth of Focus) of the transferred image. Of its purpose. Furthermore, it is also advantageous in Exposure Latitude (EL), and it also brings the effect of increasing the mask error enhancement factor (MEEF). In many phase shift masks, the transmitted light of the reverse phase is interfered at the boundary between the semi-transmissive portion and the transparent portion to obtain effects such as improved contrast. In contrast, the mask I is separated by a light-shielding portion between the semi-transmissive portion and the light-transmitting portion, and uses the interference of the outer edge side (positive and negative inversion of amplitude) in the light intensity distribution of the transmitted light between the two. Those who have obtained the above advantages.

By exposing the photomask I, a fine main pattern (hole pattern) having a diameter W2 (μm) (where W1 ≧ W2) can be formed on the object to be transferred corresponding to the main pattern described above.

Specifically, if the diameter W1 (μm) of the main pattern (hole pattern) of the mask I is set to the relationship of the following formula (1) 0.8 ≦ W1 ≦ 4.0 (1), the present invention can be more favorably obtained. The effect. This case is related to the case that if the diameter W1 is less than 0.8 μm, the analysis on the transfer object becomes difficult, and if the diameter W1 exceeds 4.0 μm, it is relatively easy to use an existing photomask. Get analytical.

The diameter W2 (μm) of the main pattern (hole pattern) formed on the object to be transferred at this time may preferably be 0.6 ≦ W2 ≦ 3.0.

When the diameter W1 of the main pattern of the mask I is 3.0 (μm) or less, the effect of the present invention is more clearly obtained. Preferably, the diameter W1 (μm) of the main pattern may be 1.0 ≦ W1 ≦ 3.0, and further, 1.0 ≦ W1 <2.5. Furthermore, in order to obtain a finer pattern for a display device transfer, the diameter W2 (μm) of the main pattern formed on the object to be transferred may be set to 0.6 ≦ W2 <2.5, and further set to 0.6 ≦ W2 <2.0. . The relationship between the diameter W1 and the diameter W2 may be W1 = W2, but it is preferably W1> W2. That is, if β (μm) is set as the deviation value, when β = W1-W2> 0 (μm), 0.2 ≦ β ≦ 1.0, and more preferably 0.2 ≦ β ≦ 0.8. When the photomask I is designed in this way, advantageous effects such as reduction in loss of the residual film thickness of the photoresist pattern on the object to be transferred can be obtained.

In the above, the diameter W1 of the main pattern of the mask I refers to the diameter of a circle or a value close to a circle. For example, when the shape of the main pattern is a regular polygon, the diameter W1 of the main pattern is set to the diameter of an inscribed circle of the regular polygon. If the shape of the main pattern is a square as shown in FIG. 1 (a), the diameter W1 of the main pattern is the length of one side of the square. The diameter W2 of the transferred main pattern is also the same as the diameter of a circle or a value close to a circle.

Of course, when it is desired to form a finer pattern, the diameter W1 may be set to 2.5 (μm) or less and 2.0 (μm) or less, and the diameter W1 may be set to 1.5 (μm) or less to apply the present invention.

For the representative wavelength of the exposed light used in the exposure of a mask having such a pattern for transfer, the phase difference between the main pattern and the auxiliary pattern 1 is approximately 180 degrees. Therefore, the semi-transparent film used in the auxiliary pattern has a phase shift of the light Phase shift characteristic of 1 degree, and 1 is set to approximately 180 degrees.

Here, the term "approximately 180 degrees" refers to a range of 180 degrees ± 15 degrees. The phase shift characteristic of the translucent film is preferably within a range of 180 ± 10 degrees, and more preferably within a range of 180 ± 5 degrees.

Furthermore, the effect of using the exposure light including i-rays, h-rays, or g-rays in the exposure of the mask I is obvious, and it is particularly preferable to apply wide-wavelength light including i-rays, h-rays, and g-rays as the exposure light. . In this case, as the representative wavelength, any of i-ray, h-ray, and g-ray may be used. For example, a g-ray may be used as a representative wavelength to form a photomask of this aspect.

The light transmittance T1 of the translucent portion can be set as described below. That is, when the transmissivity of the translucent film formed on the translucent portion to the representative wavelength is T1 (%), 2 ≦ T1 ≦ 95 such a translucent portion transmittance can perform the following transfer pattern Control of optical images. The transmittance T1 is preferably set to 20 ≦ T1 ≦ 80. More preferably, the transmittance T1 is 30 ≦ T1 ≦ 70, and more preferably 35 ≦ T1 ≦ 65. In addition, the transmittance T1 (%) is set to the transmittance of the above-mentioned representative wavelength in the semi-transmissive film based on the transmittance of the transparent substrate. This transmittance is coordinated with the setting of the width d1 (μm) of the auxiliary pattern described below, and controls the amount of light transmitted through the auxiliary pattern and the main pattern in reverse phase. The effect of improving the transferability (for example, increasing the DOF) by the interference of light is a good range.

In the mask of this aspect, the light-shielding portion formed in a region other than the region where the main pattern and the auxiliary pattern are formed, and formed so as to surround the main pattern and the auxiliary pattern can be configured as described below.

The light-shielding portion is a light-shielding film having an optical density OD ≧ 2 (preferably OD ≧ 3), which does not substantially transmit the light of exposure (light in a wavelength range of i-ray to g-ray). Made on a transparent substrate.

In the above transfer pattern, when the width of the auxiliary pattern is set to d1 (μm), 0.5 ≦ √ (T1 / 100) × d1 ≦ 1.5 ··· (2) When the condition is satisfied, transferability of the photomask I is obtained. Excellent effect. At this time, if the distance between the center of the width of the main pattern and the center of the width of the auxiliary pattern is set to P1 (μm), the relationship of the distance P1 is preferably 1.0 <P1 ≦ 5.0. More preferably, the distance P1 can be set to 1.5 <P1 ≦ 4.5, and even more preferably, it can be set to 2.5 <P1 ≦ 4.5. By selecting such a distance P1, the interference of the transmitted light of the auxiliary pattern and the transmitted light of the main pattern causes a good interaction, thereby obtaining an excellent effect such as DOF.

The width d1 (μm) of the auxiliary pattern is a size below the analysis limit under the exposure conditions (exposure device used) suitable for the photomask. Generally speaking, it is considered that the analysis limit in an exposure device for display device manufacturing is about 3.0 μm to 2.5 μm (i-ray to g-ray), and the width d1 (μm) is set to an exposure device that does not allow an exposure mask to analyze Of the size. Specifically, it is d1 <3.0, preferably d1 <2.5, more preferably, d1 <2.0, and even more preferably d1 <1.5.

Further, in order to allow the transmitted light of the auxiliary pattern to interfere well with the transmitted light of the main pattern, d1 ≧ 0.7 is more preferable, and d1 ≧ 0.8 is more preferable. Moreover, it is preferable that d1 <W1, and it is more preferable that d1 <W2. Moreover, in this case, the transferability of the photomask I is good, and the following correction steps are preferably used.

The relational expression (2) is more preferably the following expression (2) -1, and even more preferably the following expression (2) -2. 0.7 ≦ √ (T1 / 100) × d1 ≦ 1.2 ·· ((2) －1 0.75 ≦ √ (T1 / 100) × d1 ≦ 1.0 ·· (2) －2 The light amount exhibits an excellent effect when the balance between the transmittance T1 (%) and the width d1 (μm) satisfies the above conditions.

As described above, the main pattern of the mask I shown in FIG. 1 (a) is a square, but the mask to which the present invention is applied is not limited to this. For example, as illustrated in FIG. 10, the main pattern of the photomask may be an octagon or a circle-symmetric shape. Furthermore, the center of the rotational symmetry can be set as the center that becomes the reference of the distance P1.

In addition, the shape of the auxiliary pattern of the photomask shown in FIG. 1 is an octagonal band. This shape can be stably manufactured as an auxiliary pattern for forming a main pattern (hole pattern) and has a high optical effect. However, the photomask to which the present invention is applied is not limited to this. For example, the shape of the auxiliary pattern is preferably a shape in which a fixed width is given to a rotationally symmetric shape having a symmetry of three or more times with respect to the center of the main pattern. Several examples are shown in FIGS. 10 (a) to (f). As the design of the main pattern and the design of the auxiliary pattern, it is also possible to combine the different ones in FIGS. 10 (a) to (f).

For example, exemplifying the auxiliary pattern is a regular polygon such as square, regular hexagon, regular octagon, regular decagon, regular dodecagon, regular hexagon (preferably a regular 2 ⁿ polygon, here n Is an integer of 2 or more) or a circle. The shape of the auxiliary pattern is preferably a shape in which the outer periphery and the inner periphery of the auxiliary pattern are substantially parallel, that is, a regular polygon having a substantially constant width or a circular band. This band-like shape is also called a polygonal band or a circular band. The shape of the auxiliary pattern is preferably a shape in which such a regular polygonal band or a circular band surrounds the periphery of the main pattern. In this case, the balance of the light amounts of the transmitted light of the main pattern and the transmitted light of the auxiliary pattern can be made good.

Alternatively, it is preferable that the shape of the auxiliary pattern completely surrounds the periphery of the main pattern with the light-shielding portion interposed therebetween, but may be a shape in which a part of the polygonal band or the circular band is missing. The shape of the auxiliary pattern may also be a shape in which corners of the quadrangular band are missing, as shown in FIG. 10 (f), for example.

In addition, as long as the effect of the present invention is not hindered, other patterns may be used in addition to the main pattern and the auxiliary pattern.

Next, an example of a method of manufacturing the photomask I will be described below with reference to FIG. 11. As in FIG. 1, the symbols are only marked for those who appear for the first time, and are omitted later.

As shown in FIG. 11 (a), a photomask base is prepared.

The photomask base is on a transparent substrate 10 including glass, the semi-transmissive film 11 and the light-shielding film 12 are formed in this order, and a first photoresist film 13 is further coated.

Semi-transparent film is ideal to satisfy the above-mentioned transmittance T1 and phase difference 1, and includes materials capable of wet etching. However, if the amount of side etch generated during wet etching becomes too large, defects such as deterioration in CD accuracy or damage to the upper layer film due to undercuts may occur, so the range of film thickness is preferably 2000Å or less. For example, the range is 300 to 2000 Å, and more preferably 300 to 1800 Å. Here, the CD refers to Critical Dimension (critical dimension), and is used in this specification as a pattern width.

In order to satisfy these conditions, the translucent film material preferably has a refractive index of 1.5 to 2.9, and more preferably 1.8 to 2.4, at a representative wavelength (for example, h-ray) contained in the exposed light.

Furthermore, it is preferable that the semi-transparent film has a pattern cross-section (etched surface) formed by wet etching to be approximately perpendicular to the main surface of the transparent substrate.

In consideration of the above properties, the film material as a translucent film may be a material including metal and Si, and more specifically, including any of Zr, Nb, Hf, Ta, Mo, and Ti and Si. Materials, or oxides, nitrides, oxynitrides, carbides, or oxynitride carbide materials containing such materials. As a method for forming the semi-transparent film, a known method such as a sputtering method can be applied.

A light-shielding film is formed on the semi-transparent film on the mask substrate. As a film-forming method of a light-shielding film, a well-known method, such as a sputtering method, can be applied similarly to the case of a translucent film.

The material of the light-shielding film may be either Cr or a compound thereof (oxide, nitride, carbide, oxynitride, or oxynitride carbide), or a metal silicide containing Mo, W, Ta, Ti, or The silicide of the above compound. However, the material of the light-shielding film of the photomask substrate is preferably a material capable of being wet-etched in the same manner as the semi-transparent film, and having a selective etching property with respect to the material of the semi-transparent film. That is, it is preferable that the light-shielding film has resistance to the etchant of the semi-light-transmitting film, and that the light-shielding film has resistance to the etchant of the light-shielding film.

A first photoresist film is coated on the light-shielding film on the photomask base. The photomask of this aspect is preferably drawn by a laser drawing device, so it is set as a suitable photoresist. The first photoresist film may be either a positive type or a negative type. Hereinafter, the positive type will be described.

Next, as shown in FIG. 11 (b), the first photoresist film was subjected to drawing (first drawing) based on drawing data of a pattern for transfer using a drawing device. The first photoresist pattern 13p obtained by development is used as a mask, and the light-shielding film is subjected to wet etching. Thereby, a region to be a light shielding portion is defined, and a region of an auxiliary pattern surrounded by the light shielding portion (light shielding film pattern 12p) is defined.

Next, as shown in FIG. 11 (c), the first photoresist pattern is peeled.

Next, as shown in FIG. 11 (d), a second photoresist film 14 is coated on the entire surface including the formed light-shielding film pattern.

Next, as shown in FIG. 11 (e), a second drawing is performed on the second photoresist film to form a second photoresist pattern 14p formed by development. The second photoresist pattern and the light-shielding film pattern were used as masks, and wet etching of a semi-transparent film was performed. By this etching (development), a region including a main pattern exposing the light-transmitting portion of the transparent substrate is formed. Furthermore, it is preferable that the second photoresist pattern covers an area that becomes the auxiliary pattern, and has an opening in an area that becomes the main pattern including the light-transmitting portion, and the edge of the light-shielding film is exposed from the opening. The drawing data of the second drawing is sizing. In this way, the misalignment between the first drawing and the second drawing can be absorbed to prevent the degradation of the CD accuracy of the transfer pattern, so that the center of gravity of the main pattern and the auxiliary pattern can be finely matched.

Next, as shown in FIG. 11 (f), the second photoresist pattern is peeled off to complete the photomask I in this state shown in FIG. 1.

However, wet etching can be applied during the manufacture of such a photomask. Since wet etching has the property of isotropic etching, if the thickness of the translucent film is considered, it is useful from the viewpoint of ease of processing that the width d1 of the auxiliary pattern is 1 μm or more, preferably 1.2 μm or more.

Regarding the mask I in this state shown in FIG. 1, the transfer performance was compared and evaluated by optical simulation.

Here, Reference Example 1 and Reference Example 2 were prepared as a transfer pattern for forming a hole pattern on the object to be transferred. When the exposure conditions were set in common, an optical simulation was performed on what kind of transfer performance was shown. .

(Reference Example 1) The mask of Reference Example 1 is a mask having the same configuration as the above-mentioned mask I. Here, the main pattern including the light-transmitting portion is a square having one side (diameter) (that is, W1) of 2.0 (μm), and the width of the auxiliary pattern including the translucent portion is d1 of 1.3 (μm). The distance between the center of the main pattern and the width center of the auxiliary pattern, that is, the distance P1 is set to 3.25 (μm).

The auxiliary pattern is formed by forming a translucent film on a transparent substrate. The g-ray transmittance T1 of the translucent film was 45 (%), and the phase shift amount was 180 degrees. The light-shielding portion surrounding the main pattern and the auxiliary pattern is formed of a light-shielding film (OD> 2) that substantially does not transmit light of exposure.

(Reference Example 2) As shown in FIG. 2, the mask of Reference Example 2 has a pattern of a so-called binary mask including a light-shielding film pattern formed on a transparent substrate. The photomask includes a square main pattern including a light-transmitting portion of a transparent substrate surrounded by a light-shielding portion. The diameter W1 (one side of the square) of the main pattern is 2.0 (μm).

Either of the photomasks of Reference Examples 1 and 2 was set to form a hole pattern having a diameter W2 of 1.5 μm on the transfer target, and the exposure conditions applicable in the simulation were as follows. That is, the exposure light is set to a wide wavelength including i-ray, h-ray, and g-ray, and the intensity ratio is set to g: h: i = 1: 1: 1.

The optical system coefficient of the exposure device has an aperture NA of 0.1 and a coherence factor σ of 0.5. The film thickness of the positive type photoresist for grasping the cross-sectional shape of the photoresist pattern formed on the object to be transferred was set to 1.5 μm.

FIG. 3 shows the performance evaluation of each transfer pattern under the above conditions.

[Evaluation of transferability optical property] For example, in order to transfer a fine light-transmitting pattern with a small diameter, the transmitted light intensity curve formed by the space image formed by the exposed light transmitted through the photomask on the object to be transferred The distribution must be better. Specifically, the slope forming the peak of the transmitted light intensity is sharp, showing a nearly vertical rise; and the absolute value of the peak transmitted light intensity is high (when a secondary peak is formed around it, it is relatively high relative to the intensity) ) Etc. are more important.

More quantitatively, when evaluating a photomask based on optical performance, the following indicators can be used. (1) Depth of Focus (DOF) Relative to the target CD, it is used to determine the depth of focus within a specific range (here, within the range of ± 15%). The higher the value of DOF, the less likely it is to be affected by the flatness of the object to be transferred (for example, a panel substrate for a display device), so that a fine pattern can be reliably formed to suppress the CD unevenness. (2) Exposure Latitude (EL: Exposure Latitude) The latitude of the light intensity used for exposure within a specific range (here, within the range of ± 15%) relative to the target CD. According to the above, if the performance of each sample of the simulation object is evaluated, as shown in FIG. 3, the mask of Reference Example 1 exhibits a stable pattern in terms of depth of focus (DOF) compared to Reference Example 2, and shows stable patterns. Transferability.

In addition, the photomask of Reference Example 1 also shows an excellent value of 10.0 (%) or more in EL, that is, stable transfer conditions can be achieved with respect to a change in exposure light amount. Furthermore, the Dose value (exposure amount) of the mask of Reference Example 1 is considerably smaller than that of Reference Example 2. In this case, in the case of the photomask of Example 1, even when a large-area display device is manufactured, the exposure time does not increase or the exposure time can be shortened.

[Defect Correction Method] Hereinafter, regarding the correction method of the present invention, when a defect occurring in the auxiliary pattern (translucent portion) of the above-mentioned mask I is detected, a step of repairing the defect is taken as an example. Be explained.

When correcting the translucent portion, a correction film having optical characteristics equivalent to those of a normal film may be used. However, in contrast to normal films, film formation such as sputtering is applicable, and the film formation of a correction film that requires localized deposition of a film material is a film including a material different from the normal film by using a different method. Due to the narrow range of stable film-forming conditions, local film deposition is difficult in practice to satisfy the requirements of both transmittance and phase characteristics. Therefore, even if the shape or the physical properties are not the same as those of the semi-transmissive portion formed of a normal film, the correction of the above-mentioned optical effect of the photomask I can be performed substantially the same.

FIG. 4 shows the results obtained by simulating changes in the behavior of the translucent film used in the translucent portion of the octagonal band of the mask I when the transmittance of the translucent film is changed. In the basic design of the reticle I (reference example 1) shown in FIG. 1, the transmittance T1 of the semi-transmissive portion is 45% as described above, at this time, the DOF is 33.5 (μm) and the EL is 10.4 (%). (Figure 3, Figure 4).

Here, if the width of the semi-transmissive part is fixed to the above value and the phase shift amount is 180 degrees, the transmittance of the semi-transmissive part increases, the value of DOF increases, and on the other hand, EL changes from increasing to It decreases and reaches approximately zero after reaching a transmittance of 60%.

Next, in FIGS. 5A to 5C, when the transmittance of the auxiliary pattern including the semi-transmissive portion is set to a value in the range of 50 to 70%, the simulation results are used to verify the width of the semi-transmissive portion (CD). Change, the result of how DOF or EL changes. According to the verification, it can be seen that in any case of the transmittance, the EL has a portion of more than 10% near its peak, so that the DOF can be allowed in the region (for example, 25 μm or more, preferably 30 μm or more). ). Furthermore, the conditions under which both DOF and EL are better are obtained in the area surrounded by the dotted lines in FIGS. 5A to 5C. Based on these results, FIG. 5D shows an example of a combination of transmittance and width of a preferable translucent portion.

That is, FIG. 4 shows that the EL deteriorates due to the change in the transmittance of the auxiliary pattern including the semi-transmissive portion, but the situation where the deterioration tendency of the EL is substantially restored by the change in the width of the auxiliary pattern is shown in FIGS. 5A to 5C. . Furthermore, in the above-mentioned example, the case where correction was performed by the correction film which has a transmittance higher than a transflective part was demonstrated, but the case where it was corrected by the transmittance | permeability which has a translucent part is more In the case of a correction with a low transmittance correction film, a correction in which the width of the auxiliary pattern is further enlarged may be applied. Therefore, when a defect occurs in the auxiliary pattern (width d1) including a semi-transmissive portion (transmittance T1), and it is intended to be corrected by a correction film, even if a film having a transmittance (T2) different from that of a normal film is used, The correction film can also replace the normal auxiliary pattern by appropriately using the width (d2) of the auxiliary pattern different from the normal film. Further, it can be understood that the correction auxiliary pattern including the correction semi-transmissive portion formed by the correction film is substantially the same as the normal auxiliary pattern, and the transmitted light in a reverse phase with the light transmitting portion is adjusted to an appropriate amount of light, so that Can interfere with the transmitted light of the main pattern.

In other words, in a semi-transmissive portion of a specific width having a phase shift characteristic, when a combination of the value of the transmittance T1 and the value of the width d1 is used to form an optical image formed by transmitted light with an inverted phase, it is possible to convert The excess and deficiency of one side is supplemented by the other. If the transmissivity of the translucent film is T1, the transmittance of the correction film is T2, and the width of the translucent portion (that is, the width of the auxiliary pattern, hereinafter, also referred to as the "normal auxiliary pattern width") is d1. If the width of the translucent portion (that is, the width of the correction auxiliary pattern) is d2, it can be set to T2> T1 and d2 <d1, or T2 <T1 and d2> d1. However, in the case of d2> d1, it is also preferable that the width d2 and the width d1 are the same as the size smaller than the analysis limit of the exposure device that exposes the photomask. The specific dimensions are the same as those described for the width d1.

As mentioned above, in the case of mask defect correction, the condition range for obtaining stable deposition conditions of the correction film is narrow, and it is difficult to obtain the same optical characteristics (transmittance, phase shift amount) as a normal film. A modified auxiliary pattern with the same function as a normal auxiliary pattern is extremely meaningful.

[Defect Correction Example] Based on the above verification results, a specific example of the steps of the method for correcting the photomask will be described.

<Example 1 (Part 1 of Case of Black Defect)> A case where a black defect is generated in an auxiliary pattern including a semi-transmissive portion of the photomask of Reference Example 1 described above will be described. For example, when the semi-transmissive portion of the octagonal band included in the mask I is divided into sections A to H as shown in FIG. 6, it is assumed that a black defect occurs in the section A. That is, the type and location of the defect are determined here.

In this case, a correction device (hereinafter, sometimes referred to as a supplementary film) having a light-shielding property having the same optical density (OD ≧ 2) as the light-shielding film may be formed using a correction device as necessary, in a position containing a defect. The desired area is processed before adjusting the shape of the black defect (Fig. 7 (a)). The sign of the portion where the shape of the black defect is adjusted by the supplementary film, that is, the area of the supplementary film is set to 17. The area 17 of the supplementary film is preferably a quadrangle (square or rectangle). The area 17 of the supplementary film shown in FIG. 7 (a) has the same width as the normal auxiliary pattern, but it can also be set to be wider than the normal auxiliary pattern or smaller than the normal auxiliary pattern. The shape of the generated black defect may be adjusted to the above-mentioned quadrangle.

Then, based on the above verification results, the width (CD) and transmittance of the semi-transmissive portion were selected to be corrected in such a manner that an optical effect approximately equal to the normal auxiliary pattern can be obtained by the correction film. For example, when the transmittance T2 of the correction film is larger than the transmittance T1 (here, 45%), make the width d2 of the correction auxiliary pattern smaller than the width d1 of the normal auxiliary pattern, and select an appropriate transmittance T2 and width. d2 combination. Preferably, referring to the association illustrated in FIG. 5D in advance, it is possible to grasp an appropriate combination of the two. For example, the transmittance T2 can be set to 50%, and the width d2 can be set to 1.20 μm. In addition, the phase shift amount of the correction film is set to approximately 180 degrees in the same manner as in a normal film.

The complementary film having the width determined in this way is partially removed, the transparent substrate is exposed, and the formation region of the correction film is delimited (FIG. 7 (b)). As a method for removing the supplementary film, a laser, a fuse, or a FIB (focused ion beam) method can be applied. The sign of the portion where the supplementary film was removed, that is, the formation area of the correction film was set to 18. Then, a correction film forming step of forming the correction film 15 in the correction target region that is the formation region of the correction film is performed (FIG. 7 (c)). If the formation region 18 of the correction film is also quadrangular (rectangular or square), it is easy to uniformly deposit the correction film, so it is preferable.

Furthermore, for the formation of the supplementary film and the correction film, for example, a laser CVD apparatus can be preferably used. As for the film material, the same one as the correction film can be used. Prior to [the film material identified as "correction film" before this exists in paragraph 0019 of the related technology, but there is no record of "supplementary film", only "the above" may not be sufficient. ] When forming a supplementary film, apply different film formation conditions (laser power, gas flow rate, or film formation time) to the correction film, and form a film with higher light-shielding properties that have different film physical properties (film density, etc.).

As a result, a modified semi-transmissive portion including a semi-transmissive portion having a defect which is corrected and a narrower correction film is formed, and the modified semi-transmissive portion becomes a light-shielding portion including a light-shielding film or a supplementary film by light-shielding property. The formed light-shielding portion (also referred to as a supplementary light-shielding portion) surrounds the shape.

Moreover, when adjusting the shape of the black defect, or removing the film, and forming the correction film, it is not necessary to follow the above sequence, as long as the correction film having the selected transmittance and phase characteristics is finally formed with a width as determined, and What is necessary is just to form the state which surrounds the circumference | surroundings by the light-shielding film (in this state, the state of FIG.7 (c)). For example, the translucent film (normal film) can also be removed from a specific area containing the generated black defects as the portion 18 where the film has been removed (Fig. 7 (d)), and After the correction film 15 is formed with a specific width (FIG. 7 (e)), supplementary films 16 are formed on both outer sides thereof (FIG. 7 (f)).

As a result, the pattern for the transfer to which the correction has been performed has a light-transmitting portion (main pattern) with a transparent substrate exposed and a correction semi-light-transmitting portion formed of a correction film containing a material different from the translucent film. The light-transmitting portion has a width d2 (μm) arranged near the light-transmitting portion through the light-shielding portion or supplementing the light-shielding portion. In addition, an area excluding the light-transmitting portion and the modified semi-light-transmitting portion includes a light-shielding portion, or includes a light-shielding portion and a supplementary light-shielding portion.

If there is any remaining normal translucent portion, it forms part of the octagonal band. Here, since d2 <d1, the correction translucent portion is included in and arranged in the region of the octagonal band. For example, as shown in FIG. 7 (c), it is preferable that the two sides forming the edge of the modified translucent portion and the two sides forming the edge of the normal translucent portion are arranged in parallel.

However, as for the formation position of the correction film, it is more preferably located in the center in the width direction of the octagonal band (that is, the region of the normal translucent portion). In other words, it is preferable that the value of the distance (distance P2) between the center of the main pattern after correction and the width center of the auxiliary pattern after correction does not change compared with the value (P1) before correction (that is, it becomes P1 = P2 Method), the formation position of the correction film is set (see FIG. 7 (c)). That is, here, the width d2 of the correction film with respect to the width d1 of the normal film before correction is d2 <d1, but when the center position of the width of the correction film is set so that no defects occur (ie, as designed ) The center position of the width of the auxiliary pattern does not change. The reason is that the peak position of the light intensity distribution of the transmitted light forming the correction auxiliary pattern is the same as in the case of a normal film.

Therefore, when the corrected photomask is transferred, the optical image formed by the light exposed through the auxiliary pattern including the defect correction portion is substantially the same as that in the case of no defect, and the optical image is the same as that of the light transmitted through the main pattern Image interference indicates excellent transfer characteristics (eg, DOF, EL).

<Example 2 (Case of White Defects)> FIG. 8 (a) illustrates a case where white defects occur in the auxiliary pattern of the mask I. For example, when the semi-transmissive portion of the octagonal band included in the mask I is divided into sections A to H as shown in FIG. 6, it is assumed that a white defect occurs in the section A. That is, the location and type of the defect are determined here. First, as shown in FIG. 8 (a), the shape of the white defect may be adjusted by removing a film near the white defect as necessary. The symbol of the portion where the film was removed near the white defect was set to 19. In addition, a white defect formed by removing the remaining residue of the black defect may be set as a correction target in this state. Further, a supplementary film 16 is formed in a region containing a defect, and a black defect is manually formed (FIG. 8 (b)). Thereafter, the correction is performed in the same manner as the above-mentioned method for correcting black defects (FIGS. 7 (a), (b), and (c)).

<Example 3 (part 2 of the case of black defects)> Fig. 9 (a) shows a transfer pattern in which a plurality of patterns in Fig. 1 (a) are arranged in the same plane, with respect to one main pattern. The pattern is completely missing black defects. In addition, the black defect may be a black defect formed by adjusting the shape of the generated black defect and supplemented by a film, or a black defect obtained by forming a supplementary film in a region including the generated white defect.

In this case, it is effective to form auxiliary patterns corresponding to all of the sections A to H (FIG. 6). However, the correction procedure is the same as that in the first embodiment. That is, before the formation of the correction film, here is also the same as that performed in Example 1. The combination of the transmittance T2 and the width d2 of the formed correction film is selected. That is, the transmittance T2 of the correction film is made larger than the transmittance T1 (for example, 45%) of the translucent film (normal film), and the correction auxiliary pattern width d2 is made smaller than the normal auxiliary pattern width d1. For example, the transmittance T2 can be set to 50%, and the width d2 can be set to 1.20 μm. The phase shift amount of the correction film is also set to approximately 180 degrees here.

Next, as in FIG. 7 (b), the film is removed based on the determined width, and the transparent substrate in the area where the correction film is formed is exposed. Then, a correction film 15 having a determined transmittance is formed in this region (FIG. 9 (b)). Of course, the order of FIG. 7 (d) (e) (f) can also be followed.

Moreover, the case where d2 <d1 is described in this aspect. On the other hand, in the case of d2> d1, when the defect is corrected, the translucent film that is a normal film and the light-shielding film adjacent to it are removed by a desired width to expose the transparent substrate and form in this area. Correction film. In this case, the transmittance T2 of the correction film is smaller than the transmittance T1 of the normal film. In addition, the width d2 is set to a size (for example, d2 <3.0 μm) that the exposure device that exposes the photomask does not analyze.

In addition, the correction method of the present invention is not limited to the mask of the mask I design. With the correction method of the present invention, defects generated in the semi-transmissive portion having a phase shift characteristic of a specific width are corrected. The optical image formed by the transmitted light produces a function that is approximately the same as a normal semi-transmissive portion It is self-evident that the effect can be applied to the masks of other designs. According to the design of the transfer pattern, the optimal transmittance or CD value can be obtained by optical simulation.

[Mask of the Present Invention] The present invention includes a mask (referred to as a mask II) to which the above-mentioned correction has been performed.

As shown in FIGS. 7 (c) and 9 (b), the photomask of the present invention has a pattern for transfer formed on a transparent substrate. The transfer pattern includes: a light-transmitting portion that exposes a transparent substrate; a semi-light-transmitting portion formed by forming a semi-transparent film on the transparent substrate and having a width d1 (μm); and a light-shielding portion that It is located in an area excluding the light-transmitting portion and the semi-light-transmitting portion. The semi-transmissive portion is disposed near the light-transmitting portion through the light-shielding portion. That is, a light-shielding portion is interposed between the semi-light-transmitting portion and the light-transmitting portion. Here, the term "nearby" refers to a distance at which the semi-transmissive portion and the translucent portion are located at the transmitted light to interact with each other, and the distribution of the optical image can be changed. In the transfer patterns shown in FIGS. 7 (c) and 9 (b), the light-transmitting portion constitutes the main pattern and the semi-light-transmitting portion constitutes the auxiliary pattern.

Moreover, the mask (mask II) of this invention is a thing which correct | amends the defect generate | occur | produced in the semi-transparent part of the said mask I. Specifically, the photomask II includes a modified semi-transmissive portion having a width d2 (μm) formed by forming a correction film on a transparent substrate, and is arranged in a region of a normal semi-transmissive portion (here, a regular octagon). Zone). That is, the shape contained in the area where the semi-transmissive portion has a normal semi-transmissive portion is corrected.

The normal translucent portion included in the mask II forms part of the area of the regular octagonal band (see FIG. 7 (c)).

The shape of the normal translucent portion can be grasped by referring to other patterns included in the same transfer pattern (see FIG. 9 (b)).

The ranges of the diameter W1 of the main pattern, the transmittance T1 of the translucent portion, and the width d1 of the auxiliary pattern are as described above.

The translucent film has a transmittance T1 (%) for a representative wavelength of light included in the exposure, and has a phase shift for the light of the representative wavelength. The phase shift characteristic of 1 (degrees), the correction film has a transmittance T2 (%) for the above-mentioned representative wavelength, and has a phase shift for the above-mentioned representative wavelength of light Phase shift characteristic of 2 (degrees).

Phase 1 and 2 is approximately 180 degrees. As described above, the term "approximately 180 degrees" means a range of 180 ± 15 degrees. Preferably, phase 2 can be set 1 ± 10, more preferably set to Within 1 ± 5.

In addition, although T2> T1 and d2 <d1, or T2 <T1 and d2> d1, T2> T1 and d2 <d1 are preferred. In this case, it is easy to obtain a CVD film having a stable film thickness.

The range of the transmittance T2 is preferably 40 ≦ T2 ≦ 80, and more preferably 40 to 75.

The difference between the transmittances T1 and T2 is preferably 2 to 45, and more preferably 2 to 35. In this case, by correcting the adjustment of the width of the semi-transmissive portion, an optical effect that is approximately the same as that of a normal semi-transmissive portion can be produced.

Furthermore, the relationship between the widths d1 and d2 is preferably d2 <d1, and the difference between the widths d1 and d2 is 0.05 to 2.0.

When the width d1 is 2 μm or less, the difference between the widths d1 and d2 is preferably in the range of 0.05 to 1.5, more preferably 0.05 to 1.0, and even more preferably 0.05 to 0.5.

In this range, the transmittance T2 of the correction auxiliary pattern can contribute to the formation of an optical image approximately the same function as a normal pattern by cooperating with the width d2. Furthermore, as a CVD laser film, Choose stable film-forming conditions. In addition, a range in which the transferability (DOF, EL) of the photomask II is good can be selected.

Furthermore, in Example 3 described above (the second in the case of a black defect), it is shown in the transfer pattern in which the patterns of FIG. 1 (a) are plurally arranged in the same plane, and the correction is An example of a black defect where the auxiliary pattern of one main pattern is completely missing. The transfer pattern of the photomask II thus corrected may also have a normal transfer pattern and a corrected transfer pattern. The "normal transfer pattern" referred to here refers to those in which there are no black or white defects in the pattern of Fig. 1 (a) that are present in plural in one mask (for example, Fig. 9 (b )The following figure). In addition, the "corrected transfer pattern" refers to a pattern that has been corrected in a state where the auxiliary pattern is completely missing from one main pattern, as shown in the upper diagram of FIG. 9 (b). That is, both the normal transfer pattern and the transfer pattern corrected in a state where the auxiliary pattern is completely missing as described above may be present in the mask II.

The present invention also includes a method for manufacturing a photomask including the correction method. This invention can be set as the manufacturing method of the mask II, for example.

In the above-mentioned manufacturing method of the photomask I, when a defect occurs in the formed translucent portion, the correction method of the present invention can be applied. In this case, for example, a defect inspection step and a correction step are provided after the second photoresist stripping step shown in FIG. 11 (f). In this correction step, the correction method of the present invention may be applied.

The present invention includes a method for manufacturing a display device including the steps of exposing the photomask of the present invention by an exposure device, and transferring the above-mentioned transfer pattern to a transfer target. Here, the display device includes elements for constituting the display device.

The manufacturing method of the display device of the present invention is to first prepare the above-mentioned photomask. Next, the above-mentioned transfer pattern is exposed, and a hole pattern having a diameter W2 of 0.6 to 3.0 μm is formed on the object to be transferred.

As an exposure device to be used, a method of performing equal-time projection exposure is preferable, and the following is used. That is, it is used as an exposure device for FPD (Flat Panel Display, flat panel display). Its composition is that the numerical aperture (NA) of the optical system is 0.08 to 0.15 (homogeneity factor (σ) is 0.4 to 0.9), and it has exposure light. A light source including at least one of an i-ray, an h-ray, and a g-ray. However, it is a matter of course that the present invention can be applied to an exposure device such that the numerical aperture NA becomes 0.10 to 0.20, and the effects of the invention can be obtained.

In addition, as the light source of the exposure device used, anamorphic lighting (oblique lighting such as ring lighting) can also be used, but non-anamorphic lighting can also obtain the excellent effect of the present invention.

The use of the photomask suitable for the present invention is not particularly limited. The photomask of the present invention can be a transmissive photomask that can be preferably used in the manufacture of a display device including a liquid crystal display device or an EL display device.

According to the photomask of the present invention, which uses a semi-transmissive portion with a reversed phase of transmitted light, it is possible to control the mutual interference of the light passing through the exposure of both the main pattern and the auxiliary pattern, so that zero-order light is reduced during exposure, so that ± The ratio of primary light is relatively increased. Therefore, the aerial image of transmitted light can be greatly improved.

For the purpose of obtaining such an effect, it is advantageous to use the photomask of the present invention for the formation of isolated hole patterns such as contact holes, which are commonly used in liquid crystal display devices or EL display devices. As the types of patterns, the dense patterns that have a fixed regularity and a large number of patterns that have an optical impact on each other are distinguished from the isolated patterns that do not exist in the surrounding pattern. Names are more common. The photomask system of the present invention is particularly suitable when it is desired to form an isolated pattern on a body to be transferred.

To the extent that the effects of the present invention are not impaired, additional optical films or functional films may be used for the photomask to which the present invention is applied. For example, in order to prevent the light transmittance of the light-shielding film from hindering inspection or detecting the position of the photomask, it may be configured to form a light-shielding film in a region other than the pattern for transfer. In addition, an anti-reflection layer may be provided on the surface of the translucent film or the light-shielding film to reduce the reflection of the drawing light or the exposed light. Furthermore, an anti-reflection layer may be provided on the back surface of the translucent film.

1 main pattern 2 auxiliary pattern 3 light-shielding part 4 light-transmitting part 5 semi-light-transmitting part 10 transparent substrate 11 semi-light-transmitting film 12 light-shielding film 12p light-shielding film pattern 13 first photoresist film 13p first photoresist pattern 14 second Photoresist film 14p 2nd photoresist pattern 15 Correction film 16 Supplementary film 17 Partially adjusted shape of black defect using supplementary film 18 Partially removed film 19 Partially removed film near white defect d1 Width d2 Width P1 Distance P2 Distance W1 Diameter

Figure 1 (a) is a plan view of a mask (Reference Example 1), which is one aspect of the correction method to which the present invention is applied, and includes a main pattern and an auxiliary pattern arranged near the main pattern (mask I) The pattern diagram, (b) is a sectional pattern diagram of the AA position in (a). FIG. 2 is a schematic plan view showing a pattern of a photomask of Reference Example 2. FIG. FIG. 3 is a graph showing performance evaluation of each transfer pattern in Reference Examples 1 and 2. FIG. FIG. 4 is a graph showing the results of the relationship between the transmittance of the semi-transparent film used in the semi-transmissive portion of the dummy mask I and the transfer performance (DOF, EL) indicated by the mask I. FIG. FIG. 5A is a diagram showing how the DOF or EL changes due to a change in the width d1 of the semi-transmissive portion when the transmittance of the semi-transmissive portion of the mask I is set to 50%. 5B is a graph showing how the DOF or EL changes due to a change in the width d1 of the semi-transmissive portion when the transmittance of the semi-transmissive portion of the mask I is set to 60%. 5C is a diagram showing how the DOF or EL changes due to a change in the width d1 of the semi-transmissive portion when the transmissivity of the semi-transmissive portion of the mask I is set to 70%. FIG. 5D is a diagram showing an example of a combination of transmittance and width of the semi-transmissive portion. FIG. 6 is a schematic plan view showing a case where the semi-transmissive portion of the octagonal band included in the mask I is divided into sections A to H. FIG. 7 (a) to (f) are schematic plan views showing an example of a method for correcting a black defect according to the first embodiment of the present invention. 8 (a) and 8 (b) are schematic plan views showing an example of a method for correcting white defects in Embodiment 2 of the present invention. 9 (a) and 9 (b) are schematic plan views showing an example of a method for correcting a black defect in which an auxiliary pattern of one main pattern is completely missing in Embodiment 3 of the present invention. 10 (a) to (f) are schematic plan views illustrating a combination of an auxiliary pattern and a main pattern. 11 (a) to (f) are schematic cross-sectional views showing an example of a method for manufacturing the photomask 1.

Claims (26)

A method for correcting a photomask, characterized in that the aforementioned photomask is provided on a transparent substrate with a translucent portion having a translucent portion, a light-shielding portion, and a width d1 (μm) formed by patterning a light-shielding film and a translucent film, respectively. Those who transfer the pattern of the light part, and the method for correcting the photomask has the following steps: a step of determining the defects generated in the translucent part, and forming a correction film at the identified position of the defect and forming a width d2 (μm) a step of forming a correction film for a correction translucent portion, where d1 <3.0, the translucent film has a transmittance T1 (%) for a representative wavelength included in the exposed light, and has the above-mentioned representative wavelength The phase shift characteristic of the phase shift of light of approximately 180 degrees. The correction film has a transmittance T2 (%) for the representative wavelength and a phase shift of approximately 180 degrees of the phase shift of the light of the representative wavelength. Characteristics, and T2> T1 and d2 <d1, or T2 <T1 and d2> d1. For example, the correction method of the photomask of item 1, wherein the widths d1 and d2 are dimensions that the exposure device that exposes the photomask does not analyze. For example, the correction method of the photomask of claim 1 or 2, wherein the semi-transmissive portion is disposed near the translucent portion via the light-shielding portion. For example, if the correction method of the photomask of item 1 or 2 is requested, where T2> T1, and the difference between T1 and T2 is in the range of 2 to 45. For example, the correction method of the photomask of claim 4, where d2 <d1, and the difference between d1 and d2 is 0.05 to 2.0. For example, the correction method of the photomask of claim 1 or 2, wherein a light-shielding supplementary film is formed at a position adjacent to the correction semi-transmissive portion before or after the step of forming the correction film. For example, the correction method of the photomask of claim 1 or 2, wherein the semi-transmissive portion is disposed near the translucent portion via the light-shielding portion, and is configured to pass the exposure through the translucent portion. An auxiliary pattern in which the light intensity distribution of light formed on the object to be transferred changes to increase the depth of focus. For example, if the correction method of the photomask of item 1 or 2 is requested, wherein the above-mentioned transfer pattern to which the above-mentioned correction method is applied is used to form a hole pattern on the transferred body, and includes: a main pattern with a diameter of W1 (μm), It includes the light-transmitting portion; an auxiliary pattern having a width d1 (μm), which is arranged near the main pattern through the light-shielding portion, and includes the semi-light-transmitting portion; and a light-shielding portion, which combines the main pattern and the The area except the auxiliary pattern surrounds the main pattern and the auxiliary pattern. For example, the correction method of the photomask of claim 8, wherein the auxiliary pattern is a region of a polygonal band or a circular band that surrounds the periphery of the main pattern through the light shielding portion. For example, the correction method of the photomask of item 9, wherein the distance between the width center of the main pattern and the width center of the auxiliary pattern is set as the distance P1, and the width center of the main pattern and When the distance of the width center of the correction auxiliary pattern is set to P2, P1 = P2. A method for correcting a photomask according to claim 1 or 2, wherein the above-mentioned pattern for transfer is a pattern for manufacturing a display device. A manufacturing method of a photomask, which includes the method of correcting the photomask according to any one of claims 1 to 11. A photomask is a transparent substrate having a transfer pattern including a light-transmitting portion, a light-shielding portion, and a semi-light-transmitting portion, wherein the transfer pattern includes: the light-transmitting portion, which exposes the transparency. A substrate; the translucent portion formed by forming a translucent film with a width d1 (μm) on the transparent substrate; and the light-shielding portion located at a position excluding the translucent portion and the translucent portion And includes a modified semi-transmissive portion formed on the transparent substrate by a modified film including a width d2 (μm) of a material different from that of the semi-transparent film, and d1 <3.0, the semi-transparent film is for The representative wavelength included in the exposed light has a transmittance T1 (%), and has a phase shift characteristic that shifts the phase of the above-mentioned representative wavelength of light by approximately 180 degrees. The correction film has a transmittance T2 ( %), And has a phase shift characteristic that shifts the phase of light of the representative wavelength by approximately 180 degrees, and T2> T1 and d2 <d1, or T2 <T1 and d2> d1. A photomask, characterized in that it is a transparent substrate having a transfer pattern including a light-transmitting portion, a light-shielding portion, and a semi-light-transmitting portion. The transfer pattern has a normal transfer pattern and a modified pattern. The pattern for transfer. The normal pattern for transfer includes: the light-transmitting portion exposing the transparent substrate; and the semi-light-transmitting portion formed by forming a translucent film on the transparent substrate and interposing the above. The light-shielding portion is disposed near the light-transmitting portion and has a width d1 (μm); and the light-shielding portion is located in an area excluding the light-transmitting portion and the semi-light-transmitting portion; the modified transfer pattern includes : The light-transmitting portion exposes the transparent substrate; a modified semi-light-transmitting portion formed by forming a correction film containing a material different from the semi-transparent film on the transparent substrate, and interposing the light-shielding portion or supplementing light-shielding And the light-shielding portion is located in a region excluding the light-transmitting portion and the modified semi-light-transmitting portion; and d1 3.0, the translucent film has a transmittance T1 (%) for a representative wavelength included in the exposed light, and has a phase shift characteristic that shifts the phase of the light of the representative wavelength by approximately 180 degrees, the correction film The above-mentioned representative wavelength has transmittance T2 (%), and has a phase shift characteristic that shifts the phase of light of the above-mentioned representative wavelength by approximately 180 degrees, and T2> T1 and d2 <d1, or T2 <T1 and d2> d1 . A photomask, characterized in that it is a transparent substrate having a transfer pattern including a light-transmitting portion, a light-shielding portion, and a semi-light-transmitting portion. The transfer pattern includes: a main pattern with a diameter of W1 (μm), It includes the above-mentioned light-transmitting portion; an auxiliary pattern having a width d1 (μm), which is formed by forming a semi-transparent film on the transparent substrate, is disposed near the main pattern through the light-shielding portion, and includes the above-mentioned semi-light-transmitting And the light-shielding portion, which is located in an area excluding the main pattern and the auxiliary pattern; and includes forming a correction film including a material different from the semi-transparent film on the transparent substrate and interposing the light-shielding portion It is arranged near the above main pattern and includes a correction auxiliary pattern that corrects the width d2 (μm) of the translucent portion, and d1 <3.0. The translucent film has a transmittance T1 for a representative wavelength included in the exposed light. (%), And has a phase shift characteristic that shifts the phase of the light of the representative wavelength by approximately 180 degrees, the correction film has a transmittance T2 (%) for the representative wavelength, and has Representative of the phase of the light of the above wavelength shift of substantially 180 degrees phase shift of the characteristic, and T2> T1 and d2 <d1, or T2 <T1, and d2> d1. A photomask, characterized in that it is a transparent substrate having a transfer pattern including a light-transmitting portion, a light-shielding portion, and a semi-light-transmitting portion. The transfer pattern has a normal transfer pattern and a modified pattern. The transfer pattern. The normal transfer pattern includes: a main pattern with a diameter of W1 (μm) including the light-transmitting portion; and an auxiliary pattern with a width of d1 (μm) that forms a semi-light transmission on the transparent substrate. It is made of a film and is disposed near the main pattern through the light-shielding portion and includes the semi-transparent portion; and the light-shielding portion is located in an area excluding the main pattern and the auxiliary pattern; the modified transfer The pattern includes: a main pattern with a diameter of W1 (μm), which includes the above-mentioned light-transmitting portion; and a correction auxiliary pattern with a width of d2 (μm), which is formed on the above-mentioned transparent substrate by a correction including a material different from the above-mentioned translucent film It is formed by a film, and is disposed near the main pattern through the light-shielding portion or the supplementary light-shielding portion, and includes a modified semi-light-transmitting portion; and the light-shielding portion is located between the main pattern and the above-mentioned Correct the area except the auxiliary pattern; and d1 <3.0, the translucent film has a transmittance T1 (%) for the representative wavelength included in the exposed light, and has a phase shift of the above-mentioned representative wavelength of light by approximately 180 degrees Phase shift characteristics, the correction film has a transmittance T2 (%) for the representative wavelength, and has a phase shift characteristic that shifts the phase of the light of the representative wavelength by approximately 180 degrees, and T2> T1 and d2 < d1, or T2 <T1 and d2> d1. For example, the photomask of claim 15 or 16, wherein the distance between the width center of the main pattern and the width center of the auxiliary pattern is set as the distance P1, and the distance between the width center of the main pattern and the width center of the correction auxiliary pattern is set. When P2 is set, P1 = P2. The photomask of claim 15 or 16, wherein the auxiliary pattern has a shape contained in a region of a polygonal band or a circular band surrounding the main pattern with the light-shielding portion interposed therebetween. For example, the photomask of claim 15, wherein the auxiliary pattern of the width d1 (μm) constitutes a part of an area of the octagonal band surrounding the main pattern with the light-shielding portion, and the correction auxiliary pattern includes the octagonal band. The shape contained in the area. The photomask according to any one of claims 13 to 16, wherein the semi-transmissive portion is arranged near the translucent portion via the light-shielding portion, and is configured to form light for the exposure through the translucent portion. An auxiliary pattern that increases the depth of focus by transferring the image on the object to be transferred. For example, the photomask of any one of claims 13 to 16, wherein the widths d1 and d2 are dimensions that are not analyzed by an exposure device that exposes the photomask. The photomask according to any one of claims 13 to 16, wherein the above-mentioned transfer pattern is located adjacent to the above-mentioned modified translucent portion and has a supplementary light-shielding portion including a light-shielding supplementary film. For example, the photomask of any one of claims 13 to 16, wherein T2> T1, and the difference between T1 and T2 is in the range of 2 to 45. For example, the reticle of item 23, wherein d2 <d1, and the difference between d1 and d2 is 0.05-2.0. The photomask according to any one of claims 13 to 16, wherein the above-mentioned transfer pattern is used to form a hole pattern on the object to be transferred. A method for manufacturing a display device, comprising using a photomask according to any one of claims 13 to 16 to irradiate the exposure light including any of i-rays, h-rays, and g-rays onto the transfer pattern, and The pattern is transferred to the transfer target.