TWI440964B - Multitone photomask, method of manufacturing the multitone photomask, and pattern transfer method - Google Patents
Multitone photomask, method of manufacturing the multitone photomask, and pattern transfer method Download PDFInfo
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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Description
本發明係關於一種在液晶顯示裝置(Liquid Crystal Display，以下稱作LCD)之製造等中所用之多調式光罩、多調式光罩之製造方法、及圖案轉印方法，尤其係關於一種在薄膜電晶體液晶顯示裝置之製造所用之適合用於薄膜電晶體之製造的多調式光罩、多調式光罩之製造方法、及圖案轉印方法。The present invention relates to a multi-tone mask, a method of manufacturing a multi-tone mask, and a pattern transfer method used in the manufacture of a liquid crystal display device (hereinafter referred to as LCD), and the like, and more particularly to a film. A multi-tone mask, a multi-mode mask manufacturing method, and a pattern transfer method suitable for the manufacture of a thin film transistor for use in the manufacture of a transistor liquid crystal display device.
於LCD之領域中，薄膜電晶體液晶顯示裝置(Thin Film Transistor Liquid Crystal Display，以下稱作TFT-LCD)相較CRT(Cathode Ray Tube，陰極射線管)而言，具有易形成為薄型且消耗電力低之優點，故當前正在迅速地向商品化發展。TFT-LCD具有如下結構：於排列成矩陣狀之各像素中排列有TFT之結構之TFT基板、與對應各像素而排列有紅色、綠色、及藍色之像素圖案之彩色濾光片在其間介入有液晶相之情形下重疊的概略結構。關於TFT-LCD，其製造步驟數多，先前，僅TFT基板便使用5~6個光罩而製造。於該種狀況下，在用於液晶顯示裝置之薄膜電晶體(TFT)之製造中，為了減少遮罩之使用片數以進行效率良好的製造，已知使用所謂的多調式光罩(多調式遮罩)。In the field of LCDs, Thin Film Transistor Liquid Crystal Display (hereinafter referred to as TFT-LCD) is easy to form thin and consumes power compared to CRT (Cathode Ray Tube). The advantages of low are currently rapidly developing into commercialization. The TFT-LCD has a structure in which a TFT substrate having a structure in which TFTs are arranged in a matrix arranged in a matrix, and a color filter in which pixel patterns of red, green, and blue are arranged corresponding to respective pixels are interposed therebetween A schematic structure in which a liquid crystal phase overlaps. Regarding the TFT-LCD, the number of manufacturing steps is large. Previously, only the TFT substrate was manufactured using 5 to 6 masks. In such a case, in the manufacture of a thin film transistor (TFT) for a liquid crystal display device, in order to reduce the number of sheets used for masking for efficient manufacturing, it is known to use a so-called multi-tone mask (multi-tone type). Mask).
所謂該多調式光罩，係指包括在透明基板上形成有遮光部、透光部、及半透光部之轉印圖案，且在使用該光罩將圖案轉印至被轉印體上時，對經該轉印圖案而穿透之曝光光量加以控制，藉以於被轉印體上之光阻膜上形成2個以上之具有不同光阻殘膜值的光阻圖案。The multi-mode mask refers to a transfer pattern including a light-shielding portion, a light-transmitting portion, and a semi-transmissive portion formed on a transparent substrate, and when the pattern is transferred onto the object to be transferred by using the mask The amount of exposure light transmitted through the transfer pattern is controlled to form two or more photoresist patterns having different photoresist residual film values on the photoresist film on the transfer target.
於日本專利特開2004-309515號公報(專利文獻1)中，揭示有一種灰階遮罩(gray tone mask)，其目的在於藉由曝光機之解像極限以下之微細的遮光圖案而減少穿透該區域之光之穿透量，選擇性地改變光阻之膜厚。而且記載有：當於灰階部產生有黑缺陷時，為了使該黑缺陷成為能獲得使上述灰階部與正常之灰階部具有相同之灰階效果的膜厚而藉由蝕刻來減少膜厚。又，記載有：當於灰階部產生白缺陷時，藉由FIB(Focused Ion Beam，聚焦離子束)而形成能獲得使上述灰階部與正常之灰階部具有相同之灰階效果的半穿透性修正膜。In Japanese Laid-Open Patent Publication No. 2004-309515 (Patent Document 1), a gray tone mask is disclosed, which aims to reduce wear by a fine light-shielding pattern below the resolution limit of an exposure machine. The film thickness of the photoresist is selectively changed by the amount of light transmitted through the region. Further, when a black defect is generated in the gray scale portion, the film is reduced by etching in order to obtain a film thickness which allows the gray scale portion to have the same gray scale effect as the normal gray scale portion. thick. Further, when a white defect is generated in the gray scale portion, it is described that a FIB (Focused Ion Beam) is used to form a half which can obtain the same gray scale effect as the gray scale portion of the normal gray scale portion. Penetration correction film.
又，於日本專利特開2002-131888號公報(專利文獻2)中，記載有：將氦氣作為載氣、將鉻(Cr)作為原料氣體並藉由雷射CVD(Chemical Vapor Deposition，化學氣相沈積)法而於光罩之白缺陷部位形成膜之方法。In Japanese Patent Laid-Open Publication No. 2002-131888 (Patent Document 2), it is described that helium gas is used as a carrier gas, chromium (Cr) is used as a material gas, and laser CVD (Chemical Vapor Deposition) is used. A method of forming a film on a white defect portion of a photomask by a phase deposition method.
對於上述的用於TFT製造等之多調式光罩，於其製造步驟中，亦無法完全避免在包括半透光膜之半透光部中產生缺陷。例如，於光罩基底之製造過程中，因在基板上形成膜時所產生之缺陷、或者在利用有光微影之遮罩製造步驟中異物之附著或光阻之針孔等各種理由而會產生脫落缺陷(白缺陷)或剩餘缺陷(黑缺陷)。於此，將穿透率因膜圖案之剩餘、遮光膜成分之附著或者異物而變得低於特定穿透率之缺陷稱作黑缺陷，將穿透率因膜圖案之不足而變得高於特定穿透率之缺陷稱作白缺陷。In the above-described multi-modulation reticle for TFT manufacturing or the like, defects in the semi-transmissive portion including the semi-transmissive film cannot be completely avoided in the manufacturing steps thereof. For example, in the manufacturing process of the reticle base, various defects may occur due to defects generated when a film is formed on the substrate, or pinholes of adhesion or light resistance in a mask manufacturing step using light lithography. A detachment defect (white defect) or a residual defect (black defect) is generated. Here, the defect in which the transmittance is lower than the specific transmittance due to the remaining of the film pattern, the adhesion of the light-shielding film component, or the foreign matter is called a black defect, and the transmittance is higher than the film pattern due to the shortage of the film pattern. A defect of a specific transmittance is called a white defect.
在專利文獻1中所記載之使用有微細遮光圖案之灰階部進行修正時，會使曝光機之解像極限以下之遮光圖案被暈映，其結果必需推算實際上成為何種穿透率而對被轉印體上之光阻進行曝光，並且為了達到與此相同之灰階效果而要對產生有黑缺陷之部分進行減膜。該推算非常困難，若不適切地進行穿透率調整，則會產生第二次的黑缺陷、白缺陷。此外，嚴格而言，已減膜之部分之穿透光與正常之微細遮光圖案之穿透光的相位不同，所以會因光之干涉而引起穿透光之增減，實效的穿透率之推算變得越來越複雜。又，當修正灰階部之白缺陷時，在以FIB而成膜時，存在素材之制約，例如，使用芘等並藉由FIB所形成之碳系之薄膜與正常部分之膜為不同的素材，因此會與正常之微細圖案部分之穿透光產生相位差。When the gray scale portion having the fine light-shielding pattern described in Patent Document 1 is corrected, the light-shielding pattern below the resolution limit of the exposure machine is fainted, and as a result, it is necessary to estimate what kind of transmittance actually becomes. The photoresist on the transferred body is exposed, and in order to achieve the same gray-scale effect, the portion where the black defect is generated is subjected to film reduction. This calculation is very difficult, and if the transmittance is adjusted unsuitably, a second black defect or white defect will occur. In addition, strictly speaking, the transmitted light of the portion of the film that has been reduced is different from the phase of the transmitted light of the normal fine light-shielding pattern, so that the increase or decrease of the transmitted light is caused by the interference of light, and the effective transmittance is The calculations are becoming more and more complicated. Further, when the white defect of the gray scale portion is corrected, there is a constraint of the material when the film is formed by FIB. For example, a carbon-based film formed by using FIB or the like is different from the film of the normal portion. Therefore, a phase difference is generated with the transmitted light of the normal fine pattern portion.
又，專利文獻2所揭示之以雷射CVD法而進行之缺陷修正係以Cr為原料氣體而形成膜，因此在Cr遮光膜之缺陷修正上並無問題，但若原封不動地直接應用於在半透光部使用有其他素材之半透光膜的多調式光罩，則縱然使用與半透光膜相同之穿透率之Cr修正膜，亦有成為如下不合適之修正遮罩之可能性：在修正部與正常部(無缺陷之正常之半透光部)之邊界、或者修正部與透光部之邊界上，因相位差引起之干涉而導致穿透率降低。若使用該種修正遮罩，則無法滿足半透光部所要求之穿透率容許範圍，有對遮罩使用者產生不便之虞。此時，例如於TFT之通道部中，亦有發生源極、汲極間之短路(short)而產生液晶顯示裝置之誤動作的深刻問題。Further, since the defect correction by the laser CVD method disclosed in Patent Document 2 uses Cr as a material gas to form a film, there is no problem in correcting the defect of the Cr light-shielding film, but it is directly applied as it is. In the semi-transmissive portion, a multi-mode mask having a semi-transmissive film of other materials is used, and even if a Cr correction film having the same transmittance as that of the semi-transmissive film is used, there is a possibility that the mask is not suitable as follows. : The boundary between the correction unit and the normal portion (the normal semi-transmissive portion without defects) or the boundary between the correction portion and the light-transmitting portion is interfered by the phase difference, resulting in a decrease in the transmittance. If such a modified mask is used, the allowable range of the transmittance required for the semi-transmissive portion cannot be satisfied, which may cause inconvenience to the user of the mask. At this time, for example, in the channel portion of the TFT, there is a deep problem that a short circuit between the source and the drain occurs, and malfunction of the liquid crystal display device occurs.
另一方面，當使用多調式光罩而在被轉印體上進行圖案轉印時所使用之曝光機例如係液晶顯示裝置製造用遮罩時，一般會使用i射線~g射線(365 nm~436 nm)左右之波長區域。於該等之曝光中，一般需要進行較半導體裝置製造用遮罩之面積更大的曝光，因此，為了確保光量而使用具有波長區域而非單一波長之曝光光為有利。所以，於決定多調式光罩之規格時，考慮曝光光所具有之曝光波長區域及其強度分布，為了在使用特定之曝光光時可獲得所需之穿透率而需要設計半透光部。On the other hand, when an exposure machine used for pattern transfer on a to-be-transferred body using a multi-tone mask is, for example, a mask for manufacturing a liquid crystal display device, i-ray to g-ray (365 nm~ is generally used). The wavelength region around 436 nm). In such exposure, it is generally necessary to perform exposure larger than the area of the mask for semiconductor device fabrication. Therefore, it is advantageous to use exposure light having a wavelength region instead of a single wavelength in order to secure the amount of light. Therefore, in determining the specification of the multi-mode mask, considering the exposure wavelength region of the exposure light and its intensity distribution, it is necessary to design the semi-transmissive portion in order to obtain a desired transmittance when a specific exposure light is used.
當於以如上所述之半透光膜而形成之半透光部所產生之缺陷部位上形成修正膜時，對於所形成之修正膜，若不考慮上述半透光膜之光穿透率而適當地設計，則結果將於修正膜部分產生黑缺陷或白缺陷之不良。進而，如上所述，縱然使用與半透光膜為相同之穿透率之修正膜，但若在修正部與正常部之邊界、或者修正部與透光部之邊界上具有相位差，則亦會產生因干涉而導致的穿透率降低。另一方面，當曝光機之曝光光較多時，未必於每個裝置中均一定。例如，即便具有於i射線~g射線之整個波長區域之曝光光，亦會存在i射線之強度最大之曝光機、g射線之強度最大之曝光機等。此外，曝光機之光源之波長特性會隨時間而變化，故考慮到實際曝光時之曝光光之波長特性，若不設計半透光膜及修正膜之光穿透特性，則難以生產出精度良好之灰階遮罩。When the correction film is formed on the defect portion generated by the semi-transmissive portion formed by the semi-transmissive film as described above, the formed film is not considered in consideration of the light transmittance of the semi-transmissive film. Properly designed, the result will be a black defect or a white defect in the correction film portion. Further, as described above, even if a correction film having the same transmittance as that of the semi-transmissive film is used, if there is a phase difference between the boundary between the correction portion and the normal portion or the boundary between the correction portion and the light transmission portion, There is a reduction in the penetration rate due to interference. On the other hand, when the exposure light of the exposure machine is large, it is not necessarily constant in each device. For example, even if there is exposure light in the entire wavelength region of the i-ray to g-ray, there is an exposure machine having the highest intensity of the i-ray, an exposure machine having the highest intensity of the g-ray, and the like. In addition, the wavelength characteristic of the light source of the exposure machine changes with time. Therefore, considering the wavelength characteristics of the exposure light during actual exposure, if the light transmission characteristics of the semi-transmissive film and the correction film are not designed, it is difficult to produce a high precision. Grayscale mask.
本發明之第1目的在於，提供一種在包含半透光膜之半透光部所產生之缺陷得到適當修正的多調式光罩。A first object of the present invention is to provide a multi-tone mask in which defects generated in a semi-transmissive portion including a semi-transmissive film are appropriately corrected.
又，本發明之第2目的在於，提供一種上述多調式光罩之製造方法。Further, a second object of the present invention is to provide a method of manufacturing the above-described multi-tone mask.
進而，本發明之第3目的在於，提供一種使用有上述多調式光罩之圖案轉印方法。Further, a third object of the present invention is to provide a pattern transfer method using the above-described multi-tone mask.
為達成上述目的，本發明具有以下之構成。In order to achieve the above object, the present invention has the following constitution.
(構成1)(Composition 1)
一種多調式光罩，其包括藉由分別對形成於透明基板上之至少半透光膜與遮光膜進行圖案加工而形成有遮光部、透光部、及半透光部之轉印圖案，對經該轉印圖案而穿透之曝光光量加以控制，藉以於被轉印體上之光阻膜上形成2個以上之具有不同光阻殘膜值的光阻圖案，其特徵在於：上述遮光部係於上述透明基板上形成至少上述遮光膜而成，上述透光部係使上述透明基板露出而形成，上述半透光部包括：由形成於上述透明基板上之半透光膜構成之正常部、及由形成於上述透明基板上之修正膜構成之修正部，上述透光部與上述修正部之相對於從i射線(波長365 nm)至g射線(波長436 nm)之整個波長區域之波長光的相位差為80度以下。A multi-mode mask comprising a transfer pattern formed by patterning at least a semi-transmissive film and a light-shielding film formed on a transparent substrate to form a light-shielding portion, a light-transmitting portion, and a semi-transmissive portion, respectively The amount of exposure light transmitted through the transfer pattern is controlled, whereby two or more photoresist patterns having different photoresist residual film values are formed on the photoresist film on the transfer target, and the light shielding portion is Forming at least the light shielding film on the transparent substrate, wherein the transparent portion is formed by exposing the transparent substrate, and the semi-transmissive portion includes a normal portion formed of a semi-transmissive film formed on the transparent substrate And a correction portion formed of the correction film formed on the transparent substrate, the wavelength of the light-transmitting portion and the correction portion relative to the entire wavelength region from the i-ray (wavelength 365 nm) to the g-ray (wavelength 436 nm) The phase difference of light is 80 degrees or less.
(構成2)(constituent 2)
如構成1之多調式光罩，其中進而上述正常部與上述修正部之相對於從i射線(波長365 nm)至g射線(波長436 nm)之整個波長區域之波長光的相位差為80度以下。In the multi-modular reticle of the first aspect, the phase difference of the wavelength between the normal portion and the correction portion with respect to the entire wavelength region from the i-ray (wavelength 365 nm) to the g-ray (wavelength 436 nm) is 80 degrees. the following.
(構成3)(constitution 3)
一種多調式光罩，其包括藉由分別對形成於透明基板上之至少半透光膜與遮光膜進行圖案加工而形成有遮光部、透光部、及半透光部之轉印圖案，對經該轉印圖案而穿透之曝光光量加以控制，藉以於被轉印體上之光阻膜上形成2個以上之具有不同光阻殘膜值的光阻圖案，其特徵在於：上述遮光部係於上述透明基板上形成至少上述遮光膜而成，上述透光部係使上述透明基板露出而形成，上述半透光部包括：由形成於上述透明基板上之半透光膜構成之正常部、及由形成於上述透明基板上之修正膜構成之修正部，上述正常部與上述透光部、上述正常部與上述修正部、上述透光部與上述修正部之相對於從i射線(波長365 nm)至g射線(波長436 nm)之整個波長區域之波長光的相位差均為80度以下。A multi-mode mask comprising a transfer pattern formed by patterning at least a semi-transmissive film and a light-shielding film formed on a transparent substrate to form a light-shielding portion, a light-transmitting portion, and a semi-transmissive portion, respectively The amount of exposure light transmitted through the transfer pattern is controlled, whereby two or more photoresist patterns having different photoresist residual film values are formed on the photoresist film on the transfer target, and the light shielding portion is Forming at least the light shielding film on the transparent substrate, wherein the transparent portion is formed by exposing the transparent substrate, and the semi-transmissive portion includes a normal portion formed of a semi-transmissive film formed on the transparent substrate And a correction portion formed of a correction film formed on the transparent substrate, the normal portion and the light transmission portion, the normal portion, the correction portion, the light transmission portion, and the correction portion with respect to a slave ray (wavelength) The phase difference of the wavelength light of the entire wavelength region from 365 nm) to the g-ray (wavelength 436 nm) is 80 degrees or less.
(構成4)(construction 4)
如構成1至3中任一項之多調式光罩，其中上述半透光膜包括含有矽化鉬化合物之材料。The multi-tone mask of any one of 1 to 3, wherein the semi-transmissive film comprises a material containing a molybdenum molybdenum compound.
(構成5)(Constituent 5)
如構成1至4中任一項之多調式光罩，其中上述修正膜包括含有鉬與矽之材料。The multi-mode mask of any one of 1 to 4, wherein the correction film comprises a material containing molybdenum and niobium.
(構成6)(constituent 6)
如構成1至5中任一項之多調式光罩，其中上述遮光部係於上述透明基板上依序形成至少上述半透光膜與上述遮光膜而成。The multi-mode mask according to any one of the first to fifth aspect, wherein the light-shielding portion is formed by sequentially forming at least the semi-transmissive film and the light-shielding film on the transparent substrate.
(構成7)(constituent 7)
如構成1至6中任一項之多調式光罩，其中上述多調式光罩係薄膜電晶體製造用之光罩，上述遮光部包括與上述薄膜電晶體之源極及汲極對應之部分，上述半透光部包括與上述薄膜電晶體之通道對應之部分。The multi-modulation reticle according to any one of 1 to 6, wherein the multi-modulation reticle is a reticle for manufacturing a thin film transistor, and the opaque portion includes a portion corresponding to a source and a drain of the thin film transistor. The semi-transmissive portion includes a portion corresponding to the channel of the thin film transistor.
(構成8)(Composition 8)
一種圖案轉印方法，其特徵在於：使用如構成1至7中任一項所述之多調式光罩並藉由曝光機而將上述轉印圖案轉印至被轉印體上。A pattern transfer method is characterized in that the transfer pattern is transferred onto a transfer target by an exposure machine using the multi-mode mask according to any one of Compositions 1 to 7.
(構成9)(constituent 9)
一種多調式光罩之製造方法，其特徵在於：該多調式光罩包括藉由分別對形成於透明基板上之至少半透光膜與遮光膜進行圖案加工而形成有遮光部、透光部、及半透光部之轉印圖案，對經該轉印圖案而穿透之曝光光量加以控制，藉以於被轉印體上之光阻膜上形成2個以上之具有不同光阻殘膜值的光阻圖案，該製造方法包括：準備步驟，準備於上述透明基板上形成有至少半透光膜與遮光膜之光罩基底；圖案化步驟，利用光微影法分別對上述半透光膜與上述遮光膜進行圖案加工，藉以形成包括遮光部、透光部、及半透光部之轉印圖案；及修正步驟，修正所形成之上述轉印圖案中產生之缺陷；且於上述修正步驟中，在上述半透光膜之脫落部、或者已去除上述半透光膜或上述遮光膜之去除部上形成修正膜而成為修正部，使上述透光部與上述修正部之相對於從i射線(波長365 nm)至g射線(波長436 nm)之整個波長區域之波長光的相位差為80度以下。A method for manufacturing a multi-modular reticle, comprising: forming a light-shielding portion and a light-transmitting portion by patterning at least a semi-transmissive film and a light-shielding film formed on a transparent substrate; And a transfer pattern of the semi-transmissive portion, the amount of exposure light transmitted through the transfer pattern is controlled, whereby two or more different photoresist residual film values are formed on the photoresist film on the transfer target a photoresist pattern, the manufacturing method comprising: preparing a step of preparing a photomask substrate having at least a semi-transmissive film and a light shielding film on the transparent substrate; and a patterning step of respectively using the photolithography method to the semi-transparent film The light shielding film is patterned to form a transfer pattern including a light shielding portion, a light transmitting portion, and a semi-light transmitting portion; and a correcting step of correcting defects generated in the formed transfer pattern; and in the correcting step Forming a correction film on the detached portion of the semi-transmissive film or the removed portion of the semi-transmissive film or the light-shielding film to form a correction portion, and the light-transmitting portion and the correction portion are opposite to each other The phase difference of the wavelength light of the entire wavelength region of the i-ray (wavelength 365 nm) to the g-ray (wavelength 436 nm) is 80 degrees or less.
(構成10)(construction 10)
如構成9之多調式光罩之製造方法，其中進而使上述正常部與上述修正部之相對於從i射線(波長365 nm)至g射線(波長436 nm)之整個波長區域之波長光的相位差為80度以下。A method of manufacturing a multi-mode mask according to claim 9, wherein the phase of the wavelength portion of the normal portion and the correction portion with respect to the entire wavelength region from the i-ray (wavelength 365 nm) to the g-ray (wavelength 436 nm) is further increased. The difference is below 80 degrees.
(構成11)(Structure 11)
一種多調式光罩之製造方法，其特徵在於：該多調式光罩包括藉由分別對形成於透明基板上之至少半透光膜與遮光膜進行圖案加工而形成有遮光部、透光部、及半透光部之轉印圖案，對經該轉印圖案而穿透之曝光光量加以控制，藉以於被轉印體上之光阻膜上形成2個以上之具有不同光阻殘膜值之光阻圖案，該製造方法包括：準備步驟，準備於上述透明基板上形成有至少半透光膜與遮光膜之光罩基底；圖案化步驟，利用光微影法分別對上述半透光膜與上述遮光膜進行圖案加工，藉以形成包括遮光部、透光部、及半透光部之轉印圖案；及修正步驟，修正所形成之上述轉印圖案中產生之缺陷；且於上述修正步驟中，在上述半透光膜之脫落部、或者已去除上述半透光膜或上述遮光膜之去除部上形成修正膜而成為修正部，使上述正常部與上述透光部、上述正常部與上述修正部、上述透光部與上述修正部之相對於從i射線(波長365 nm)至g射線(波長436 nm)之整個波長區域之波長光的相位差均為80度以下。A method for manufacturing a multi-modular reticle, comprising: forming a light-shielding portion and a light-transmitting portion by patterning at least a semi-transmissive film and a light-shielding film formed on a transparent substrate; And a transfer pattern of the semi-transmissive portion, wherein the amount of exposure light penetrated by the transfer pattern is controlled, thereby forming two or more different photoresist residual film values on the photoresist film on the transfer target a photoresist pattern, the manufacturing method comprising: preparing a step of preparing a photomask substrate having at least a semi-transmissive film and a light shielding film on the transparent substrate; and a patterning step of respectively using the photolithography method to the semi-transparent film The light shielding film is patterned to form a transfer pattern including a light shielding portion, a light transmitting portion, and a semi-light transmitting portion; and a correcting step of correcting defects generated in the formed transfer pattern; and in the correcting step Forming a correction film on the detached portion of the semi-transmissive film or the removed portion of the semi-transmissive film or the light-shielding film to form a correction portion, and the normal portion and the light-transmitting portion and the normal portion The phase difference between the portion and the correction portion, the light transmitting portion, and the correction portion with respect to the wavelength light from the i-ray (wavelength 365 nm) to the g-ray (wavelength 436 nm) is 80 degrees or less.
(構成12)(construction 12)
如構成9至11中任一項之多調式光罩之製造方法，其中使用包含矽化鉬化合物之材料來作為上述半透光膜之材質。A method of producing a multi-tone mask according to any one of 9 to 11, wherein a material containing a molybdenum molybdenum compound is used as the material of the semi-transmissive film.
(構成13)(construction 13)
如構成9至12中任一項之多調式光罩之製造方法，其中上述修正膜係藉由雷射CVD法所形成。A method of manufacturing a multi-mode mask according to any one of 9 to 12, wherein the correction film is formed by a laser CVD method.
(構成14)(construction 14)
如構成12之多調式光罩之製造方法，其中上述修正膜係藉由分別使用含有鉬之原料與含有矽之原料的雷射CVD法所形成。A method of manufacturing a multi-mode mask according to the invention, wherein the correction film is formed by a laser CVD method using a raw material containing molybdenum and a raw material containing cerium.
接下來，對本發明之效果予以說明。Next, the effects of the present invention will be described.
於鄰接之透光部與修正部之邊界上，可抑制由相位差所導致的穿透率降低，使用光罩於被轉印體上所獲得之光阻圖案成為所需之良好的形狀。當然，在製造TFT液晶顯示裝置時，亦可抑制由通道部之短路所導致的動作不良等不便。At the boundary between the adjacent light-transmitting portion and the correction portion, the decrease in transmittance due to the phase difference can be suppressed, and the photoresist pattern obtained by using the photomask on the object to be transferred becomes a desired good shape. Of course, when manufacturing a TFT liquid crystal display device, inconvenience such as malfunction due to a short circuit of the channel portion can be suppressed.
又，可獲得於半透光部所產生之缺陷得到適當修正之多調式光罩。Further, a multi-tone mask in which defects generated in the semi-transmissive portion are appropriately corrected can be obtained.
進而，使用如上所述之於半透光部所產生之缺陷得到適當修正之多調式光罩在被轉印體上進行圖案轉印，藉此可抑制TFT-LCD等之電子元件中產生之不良，從而可實現較高之良率與穩定之元件生產性。Further, the multi-tone mask which is appropriately corrected by the defects generated in the semi-transmissive portion as described above is patterned and transferred onto the object to be transferred, whereby the occurrence of defects in the electronic components such as the TFT-LCD can be suppressed. Therefore, high yield and stable component productivity can be achieved.
以下，根據圖式來說明本發明之若干實施形態。Hereinafter, some embodiments of the present invention will be described based on the drawings.
圖1係用於說明使用有多調式光罩之圖案轉印方法的剖面圖。圖1所示之多調式光罩10係用於製造例如液晶顯示裝置(LCD)之薄膜電晶體(TFT)等之電子元件者，其係於圖1所示之被轉印體20上形成2個以上之膜厚呈階段性或連續性不同之光阻圖案23者。此外，於圖1中，符號22A、22B表示於被轉印體20上積層於基板21上之膜。Fig. 1 is a cross-sectional view for explaining a pattern transfer method using a multi-tone mask. The multi-mode mask 10 shown in FIG. 1 is used for manufacturing an electronic component such as a thin film transistor (TFT) of a liquid crystal display device (LCD), which is formed on the transfer-receiving body 20 shown in FIG. More than one of the photoresist patterns 23 having different film thicknesses in stages or in continuity. Further, in Fig. 1, reference numerals 22A and 22B denote films laminated on the substrate 21 on the transfer target body 20.
上述多調式光罩10表示除遮光部、透光部以外，還具有1種半透光部之3階遮罩之例，具體而言，其包括如下部分而構成：於使用該光罩10時遮蔽曝光光(穿透率大致為0%)之遮光部11；使透明基板14之表面曝光後之曝光光穿透之透光部12；及當透光部之曝光光穿透率為100%時使穿透率降低至20%~80%、較佳者為20%~60%左右之半透光部13。遮光部11係於玻璃基板等之透明基板14上依序設置半透光性之半透光膜16、與遮光性之遮光膜15而構成。又，半透光部13係於透明基板14上形成上述半透光膜16而構成，其曝光光(例如i射線~g射線)之穿透率設定為低於透光部12。The multi-mode mask 10 is an example of a third-order mask having one type of semi-transmissive portions in addition to the light-shielding portion and the light-transmitting portion, and specifically includes the following portions: when the photomask 10 is used a light shielding portion 11 that shields exposure light (having a transmittance of approximately 0%); a light transmitting portion 12 through which exposure light is exposed after exposure of the surface of the transparent substrate 14; and an exposure light transmittance of the light transmitting portion is 100% When the transmittance is reduced to 20% to 80%, preferably 20% to 60% of the semi-transmissive portion 13. The light-shielding portion 11 is formed by sequentially providing a semi-transmissive semi-transmissive film 16 and a light-shielding light-shielding film 15 on a transparent substrate 14 such as a glass substrate. Further, the semi-transmissive portion 13 is formed by forming the semi-transmissive film 16 on the transparent substrate 14, and the transmittance of exposure light (for example, i-ray to g-ray) is set lower than that of the light-transmitting portion 12.
作為上述半透光膜16，可舉出鉻化合物、矽化鉬化合物、Si、W、Al等。其中，於鉻化合物中，有氧化鉻(CrOx )、氮化鉻(CrNx )、氮氧化鉻(CrOx N)、氟化鉻(CrFx )、及於該等中包含碳及氫者。又，作為矽化鉬化合物，除MoSix 以外，還可使用MoSi之氮化物、氧化物、氧氮化物、碳化物等。半透光膜16特別適宜包括含有矽化鉬化合物之膜素材。含有矽化鉬化合物之膜素材在與用於遮光膜而有利之鉻系材料之間具有蝕刻選擇性，於下述製造方法中，相對於對一方之膜進行蝕刻之蝕刻媒體而言，另一方膜具有抗性，故在蝕刻加工方面為極其優異之素材。再者，半透光膜亦可積層。Examples of the semi-transmissive film 16 include a chromium compound, a molybdenum telluride compound, Si, W, and Al. Among them, among the chromium compounds, there are chromium oxide (CrO x ), chromium nitride (CrN x ), chromium oxynitride (CrO x N), chromium fluoride (CrF x ), and those containing carbon and hydrogen therein. . Further, as the molybdenum molybdenum compound, in addition to MoSi x , a nitride, an oxide, an oxynitride, a carbide or the like of MoSi may be used. The semi-transmissive film 16 is particularly preferably comprised of a film material containing a molybdenum molybdenum compound. The film material containing the molybdenum molybdenum compound has etching selectivity between the chromium-based material which is advantageous for the light-shielding film, and the other film is the etching medium for etching one film in the following manufacturing method. It is resistant, so it is extremely excellent in etching processing. Furthermore, the semi-transmissive film may also be laminated.
又，作為上述遮光膜15，可舉出Cr、Si、W、Al等。較佳者為以Cr為主成分之材料。更佳者為表面具有Cr之氧化物或氮化物等之Cr系化合物之層來作為防反射層，藉此可提高轉印圖案描繪時之精度，抑制在遮罩使用時產生無用之反射雜散光。遮光膜宜單獨或者與半透光膜積層而具有光學密度3.0以上之遮光性者。Further, examples of the light shielding film 15 include Cr, Si, W, and Al. Preferred is a material containing Cr as a main component. More preferably, a layer of a Cr-based compound such as an oxide of Cr or a nitride is used as an antireflection layer, whereby the accuracy of the transfer pattern drawing can be improved, and useless stray light generated during use of the mask can be suppressed. . The light-shielding film is preferably provided alone or in combination with a semi-transmissive film to have a light-shielding property of an optical density of 3.0 or more.
於使用上述多調式光罩10時，遮光部11實質上未使曝光光穿透，透光部12使曝光光穿透，在半透光部13中曝光光減少。因此，形成於被轉印體20上之光阻膜(正型光阻膜)在轉印後並經過顯影時形成光阻圖案23，其對應於遮光部11之部分之膜厚變厚，對應於半透光部13之部分之膜厚變薄，對應於透光部12之部分實質上未產生殘膜(參照圖1)。於該光阻圖案23中，將對應於半透光部13之部分之膜厚變薄之效果在此稱作灰階效果。再者，當使用負型光阻時，需要考慮與遮光部及透光部對應之光阻膜厚反轉之情形而進行設計，此時亦可充分取得本發明之效果。When the multi-mode mask 10 is used, the light shielding portion 11 does not substantially penetrate the exposure light, and the light transmitting portion 12 penetrates the exposure light, and the exposure light is reduced in the semi-light transmitting portion 13. Therefore, the photoresist film (positive photoresist film) formed on the transfer-receiving body 20 forms a photoresist pattern 23 after being transferred and developed, and the film thickness corresponding to the portion of the light-shielding portion 11 becomes thick, corresponding to The film thickness of the portion of the semi-transmissive portion 13 is reduced, and substantially no residual film is generated corresponding to the portion of the light-transmitting portion 12 (see Fig. 1). In the photoresist pattern 23, the effect of thinning the film thickness corresponding to the portion of the semi-transmissive portion 13 is referred to herein as a gray scale effect. Further, when a negative-type photoresist is used, it is necessary to design in consideration of the fact that the thickness of the photoresist film corresponding to the light-shielding portion and the light-transmitting portion is reversed, and the effect of the present invention can be sufficiently obtained.
而且，於圖1所示之光阻圖案23中之無膜的部分，對被轉印體20上之例如膜22A及22B實施第1蝕刻，利用灰化等去除光阻圖案23中之膜較薄的部分，並於該部分上，對被轉印體20上之例如膜22B實施第2蝕刻。如此一來，使用1片多調式光罩10(3階遮罩)來進行先前之2片光罩之步驟，從而遮罩片數得以削減。Further, in the film-free portion of the resist pattern 23 shown in Fig. 1, for example, the films 22A and 22B on the transfer target 20 are subjected to the first etching, and the film in the photoresist pattern 23 is removed by ashing or the like. On the thin portion, a second etching is performed on, for example, the film 22B on the transfer target body 20. In this way, the step of the previous two masks is performed using one multi-mode mask 10 (third-order mask), so that the number of masks is reduced.
上述多調式光罩10包括藉由分別對形成於透明基板上之至少半透光膜與遮光膜進行圖案加工而形成有遮光部、透光部、及半透光部之轉印圖案，對經該轉印圖案而穿透之曝光光量加以控制，藉以於被轉印體上之光阻膜上形成2個以上之具有不同光阻殘膜值之光阻圖案。於該多調式光罩10中，上述遮光部係於上述透明基板上形成至少上述遮光膜而成，上述透光部係使上述透明基板露出而形成，上述半透光部包括：由形成於上述透明基板上之半透光膜構成之正常部、及由形成於上述透明基板上之修正膜構成之修正部。再者，將上述透光部與上述修正部之相對於從i射線(波長365 nm)至g射線(波長436 nm)之整個波長區域之波長光的相位差設定為80度以下。The multi-mode mask 10 includes a transfer pattern in which a light-shielding portion, a light-transmitting portion, and a semi-transmissive portion are formed by patterning at least a semi-transmissive film and a light-shielding film formed on a transparent substrate, respectively. The amount of exposure light penetrated by the transfer pattern is controlled so that two or more photoresist patterns having different photoresist residual film values are formed on the photoresist film on the transfer target. In the multi-mode mask 10, the light-shielding portion is formed by forming at least the light-shielding film on the transparent substrate, the light-transmitting portion is formed by exposing the transparent substrate, and the semi-transmissive portion is formed by the a normal portion formed of a semi-transmissive film on the transparent substrate and a correction portion formed of a correction film formed on the transparent substrate. Further, the phase difference between the light-transmitting portion and the correction portion with respect to the wavelength light in the entire wavelength region from the i-ray (wavelength 365 nm) to the g-ray (wavelength 436 nm) is set to 80 degrees or less.
根據多調式光罩之製造方法，關於透明基板上之半透光膜與遮光膜之順序，任一者在上方均無妨。關於多調式光罩之製造方法，將於以下詳述。According to the manufacturing method of the multi-mode mask, the order of the semi-transmissive film and the light-shielding film on the transparent substrate may be any of the above. The method of manufacturing the multi-mode mask will be described in detail below.
不僅上述如圖1所示之除透光部、遮光部以外還具有1種半透光部的3階遮罩，而且對於包括具有不同之曝光光穿透率之2個半透光部的4階遮罩、或者具有4以上之階數之遮罩，本發明亦可適當地實施。In addition to the above-described third-order mask having a semi-transmissive portion in addition to the light-transmitting portion and the light-shielding portion as shown in FIG. 1, and for the four semi-transmissive portions having different exposure light transmittances, The present invention can also be suitably implemented as a step mask or a mask having an order of 4 or more.
上述多調式光罩10係適合應用於TFT製造者，遮光部包含與TFT之源極及汲極對應之部分，半透光部包含與TFT之通道對應之部分。The multi-mode mask 10 is suitably applied to a TFT manufacturer, and the light shielding portion includes a portion corresponding to the source and the drain of the TFT, and the semi-transmissive portion includes a portion corresponding to the channel of the TFT.
圖3係具有典型的TFT圖案作為轉印圖案之多調式光罩的平面圖。在與圖1相同之部位附上相同之符號。對於具有如圖所示之圖案之光罩，本發明取得顯著之效果。Figure 3 is a plan view of a multi-tone mask having a typical TFT pattern as a transfer pattern. The same reference numerals are attached to the same portions as those in Fig. 1. The present invention achieves remarkable effects for a photomask having a pattern as shown.
例如圖1之剖面圖所示，多調式光罩宜含有以透光部、遮光部、半透光部、遮光部、透光部之順序而排列之部分。或者對於如圖3之圖案，宜含有朝一個方向(例如參照圖3(A)中之虛線方向)以透光部、遮光部、半透光部、遮光部、半透光部、遮光部、透光部之順序而排列之部分。於圖1及圖3之任一圖中，遮光部與半透光部、遮光部與透光部、半透光部與透光部分別含有鄰接部分。For example, as shown in the cross-sectional view of Fig. 1, the multi-mode mask preferably includes a portion that is arranged in the order of the light transmitting portion, the light shielding portion, the semi-light transmitting portion, the light shielding portion, and the light transmitting portion. Or, for the pattern of FIG. 3, it is preferable to include a light transmitting portion, a light blocking portion, a semi-light transmitting portion, a light blocking portion, a semi-light transmitting portion, a light blocking portion, and the like in one direction (for example, referring to the direction of the broken line in FIG. 3(A)). The portion in which the light transmitting portions are arranged in order. In either of FIGS. 1 and 3, the light shielding portion and the semi-transmissive portion, the light shielding portion and the light transmitting portion, the semi-transmissive portion, and the light transmitting portion respectively have adjacent portions.
上述半透光部之曝光光穿透率係由半透光膜之膜素材與膜厚而決定。此外，半透光部之曝光光相位差(此處係指相對於穿透透明基板之光之相位的相位偏移)亦係由膜素材與膜厚而決定。因此，對多調式光罩而言，可根據其用途、及使用其所製造之元件(例如TFT-LCD)之製造範圍(manufacturing margin)，來決定讓半透光部以怎樣的膜素材具有怎樣的膜厚。於該決定過程中，必需考慮穿透率與相位差雙方。即便考慮單獨之膜的穿透率，如若不考慮在由該半透光膜所形成之半透光部與其他部分(透光部、經修正膜所修正之半透光部(即修正部))之鄰接部分上因產生之相位差而發生干涉從而導致實際之穿透光量會局部減少，則亦無法進行所需之精緻的圖案轉印。實際上，若鄰接部之相位差大於特定範圍，則兩側之穿透光會於鄰接部相抵而產生暗線。The exposure light transmittance of the semi-transmissive portion is determined by the film material of the semi-transmissive film and the film thickness. Further, the phase difference of the exposure light of the semi-transmissive portion (here, the phase shift with respect to the phase of the light penetrating the transparent substrate) is also determined by the film material and the film thickness. Therefore, for a multi-mode mask, it is possible to determine what kind of film material the semi-transparent portion has, depending on its use and the manufacturing margin of the component (for example, TFT-LCD) manufactured. Film thickness. In the decision process, both the penetration rate and the phase difference must be considered. Even if the transmittance of the film alone is considered, the semi-transmissive portion formed by the semi-transmissive film and other portions (the translucent portion and the semi-transmissive portion corrected by the correction film (ie, the correction portion) are not considered. The adjacent portion of the adjacent portion is interfered by the phase difference generated, so that the actual amount of transmitted light is locally reduced, and the desired delicate pattern transfer cannot be performed. In fact, if the phase difference between the adjacent portions is larger than a specific range, the transmitted light on both sides will collide with the adjacent portions to generate a dark line.
於此，在圖3(A)所示之轉印圖案中之與由半透光膜16所形成之通道部相當的部分(大致U字形之圖案)上產生有黑缺陷或白缺陷。例如，黑缺陷係於半透光膜上殘留有剩餘之遮光膜之情形，白缺陷係於所使用之正光阻上產生有針孔且於半透光膜上產生有脫落之情形等。Here, in the transfer pattern shown in FIG. 3(A), a black defect or a white defect is generated in a portion (a substantially U-shaped pattern) corresponding to the channel portion formed by the semi-transmissive film 16. For example, the black defect is a case where the remaining light-shielding film remains on the semi-transmissive film, and the white defect is caused by pinholes generated on the positive photoresist used and falling off on the semi-transmissive film.
對於黑缺陷之情形，可對產生有黑缺陷之部分進行雷射照射或FIB照射，利用其能量而去除該部分，並於去除後之部分重新形成修正膜。例如，關於在通道部所產生之黑缺陷，亦可去除整個該通道部之半透光膜，並於整個通道部形成修正膜30(參照圖3(B))。或者，若於通道部所產生之黑缺陷為較小者，則亦可僅去除黑缺陷部分，並對照去除後之部分之形狀而形成修正膜30(參照圖3(C))。In the case of black defects, laser irradiation or FIB irradiation may be performed on the portion where the black defect is generated, the portion is removed by the energy thereof, and the correction film is newly formed in the removed portion. For example, regarding the black defect generated in the channel portion, the semi-transmissive film of the entire channel portion can be removed, and the correction film 30 can be formed over the entire channel portion (see FIG. 3(B)). Alternatively, if the black defect generated in the channel portion is smaller, only the black defect portion may be removed, and the correction film 30 may be formed in accordance with the shape of the removed portion (see FIG. 3(C)).
另一方面，對於白缺陷之情形亦相同，可去除包含白缺陷部分之整個通道部之半透光膜，並於整個通道部形成修正膜，或者亦可去除白缺陷之部分及白缺陷之周邊部分的半透光膜，並對照其形狀而於形狀整理後之部分上形成修正膜。On the other hand, in the case of the white defect, the semi-transmissive film including the entire channel portion of the white defect portion can be removed, and the correction film can be formed in the entire channel portion, or the portion of the white defect and the periphery of the white defect can be removed. A portion of the semi-transmissive film is formed on the portion after the shape is finished in accordance with the shape thereof.
於上述圖3(B)之情形時，形成修正膜30並已進行修正之部分(修正部)與透光部12鄰接。由於任一者均可使光穿透，故當穿透兩者之光之相位有較大差異時，穿透光彼此於該部分會相互抵消，具有如圖3(B)中之粗線31所示之暗線而發揮作用。因此，若使用該種光罩來對被轉印體上之光阻膜進行曝光，則於該部分會產生對光阻膜之曝光量不足，從而產生未料到的光阻圖案形狀不良。例如，於TFT之通道部中，亦會產生上述暗線之部分使源極與汲極短路之不良。In the case of the above-described FIG. 3(B), the portion (correction portion) where the correction film 30 is formed and corrected is adjacent to the light transmitting portion 12. Since either of them can penetrate the light, when the phase of the light that penetrates the two has a large difference, the transmitted light cancels each other in the portion, and has a thick line 31 as shown in FIG. 3(B). The dark lines shown play a role. Therefore, when such a mask is used to expose the photoresist film on the transfer target, the amount of exposure to the photoresist film is insufficient in this portion, and an unexpected shape of the photoresist pattern is defective. For example, in the channel portion of the TFT, a portion of the dark line is also generated to cause a short circuit between the source and the drain.
因此，於此，必需使用修正部與透光部之間之相位差小於特定值的修正膜。此處之相位差係指相對於使該光罩曝光時所用之曝光光波長的相位差，例如係指相對於i射線~g射線之波長光者。於i射線~g射線之區域內之任一波長中，相位差均在特定範圍內為宜。具體而言，藉由因相位差而形成之已降低的穿透光量所產生之暗線部之最小的穿透率不小於正常部之半透光部即可。此時，半透光部之圖案之大小若比透光部側之設計值大出暗線部之線寬量則為等價，但最終的TFT之動作不良等不適宜係在不會產生的範圍內。上述相位差為80度以下，更佳者為70度以下。如此一來，使用修正部與透光部之間的相對於i射線~g射線之波長光之相位差為80度以下的修正膜33來進行修正，即可抑制修正部與透光部之鄰接部上之暗線部實質上發揮遮光部之功能的不良情形(參照圖3(D))。Therefore, it is necessary to use a correction film whose phase difference between the correction portion and the light transmission portion is smaller than a specific value. Here, the phase difference means a phase difference with respect to the wavelength of the exposure light used when the mask is exposed, and for example, refers to a wavelength of light with respect to the i-ray to the g-ray. In any of the wavelengths in the region of the i-ray to the g-ray, the phase difference is preferably within a specific range. Specifically, the minimum transmittance of the dark line portion generated by the reduced amount of transmitted light formed by the phase difference is not less than the semi-transmissive portion of the normal portion. In this case, the size of the pattern of the semi-transmissive portion is equivalent to the line width of the dark portion at the design value of the light-transmitting portion side, but the final operation of the TFT is not suitable for a range that does not occur. Inside. The phase difference is 80 degrees or less, and more preferably 70 degrees or less. In this manner, the correction film 33 having a phase difference of 80 degrees or less with respect to the wavelength of the i-ray to g-ray light between the correction portion and the light-transmitting portion is corrected, and the correction portion and the light-transmitting portion can be suppressed from each other. The dark line portion on the upper portion substantially functions as a light blocking portion (see FIG. 3(D)).
此外，如上述圖3(C)所示，當針對在半透光部之一部分上所產生之缺陷而局部地形成修正膜時，半透光部之修正部與半透光部之正常部相鄰接。於此，當兩者之穿透之光的相位差過大時，兩者之穿透光會相互抵消而引起穿透光量局部地下降，並且若如圖3(C)中之粗線32所示之暗線部在該部分實質上作為遮光部而發揮作用，則會產生與上述相同之不良。Further, as shown in FIG. 3(C) above, when the correction film is partially formed for the defect generated in one of the semi-transmissive portions, the correction portion of the semi-transmissive portion and the normal portion of the semi-transmissive portion are Adjacent. Here, when the phase difference between the light of the penetration of the two is too large, the transmitted light of the two cancels each other to cause the amount of transmitted light to locally drop, and as shown by the thick line 32 in FIG. 3(C) The dark line portion functions as a light-shielding portion in this portion, and the same defect as described above occurs.
因此，宜以如下方式進行修正膜與半透光膜之選擇，即，對於修正部與正常部(正常之半透光部13)之間之相對於i射線~g射線之波長光的相位差，亦使其為80度以下，更佳者為70度以下。如上所述，使用修正部與正常部之間之相對於i射線~g射線之波長光的相位差為80度以下的修正膜33來進行修正，便可抑制在修正部與正常部之鄰接部上產生暗線(參照圖3(E))。Therefore, it is preferable to select the correction film and the semi-transmissive film in such a manner that the phase difference between the correction portion and the normal portion (the normal semi-transmissive portion 13) with respect to the wavelength of the i-ray to g-ray light It is also made 80 degrees or less, and more preferably 70 degrees or less. As described above, the correction film 33 having a phase difference of 80 degrees or less with respect to the wavelength of the i-ray to g-ray light between the correction unit and the normal portion is corrected, and the adjacent portion between the correction portion and the normal portion can be suppressed. A dark line is generated (refer to FIG. 3(E)).
因此，結果尤佳之經適當修正後之多調式光罩為如下所述者。Therefore, the result of the appropriately modified multi-tone mask is as follows.
即，一種多調式光罩，其包括藉由分別對形成於透明基板上之至少半透光膜與遮光膜進行圖案加工而形成有遮光部、透光部、及半透光部之轉印圖案，對經該轉印圖案而穿透之曝光光量加以控制，藉以於被轉印體上之光阻膜上形成2個以上之具有不同光阻殘膜值之光阻圖案，其特徵在於：上述遮光部係於上述透明基板上形成至少上述遮光膜而成，上述透光部係使上述透明基板露出而形成，上述半透光部包括：由形成於上述透明基板上之半透光膜構成之正常部、及由形成於上述透明基板上之修正膜構成之修正部，上述正常部與上述透光部、上述正常部與上述修正部、上述透光部與上述修正部之相對於從i射線(波長365 nm)至g射線(波長436 nm)之整個波長區域之波長光的相位差均為80度以下，更佳者為70度以下。That is, a multi-mode mask includes a transfer pattern in which a light-shielding portion, a light-transmitting portion, and a semi-transmissive portion are formed by patterning at least a semi-transmissive film and a light-shielding film formed on a transparent substrate, respectively. And controlling the amount of exposure light transmitted through the transfer pattern, thereby forming two or more photoresist patterns having different photoresist residual film values on the photoresist film on the transfer target, wherein: The light shielding portion is formed by forming at least the light shielding film on the transparent substrate, wherein the light transmitting portion is formed by exposing the transparent substrate, and the semi-transmissive portion is formed of a semi-transmissive film formed on the transparent substrate. a normal portion and a correction portion formed of a correction film formed on the transparent substrate, wherein the normal portion and the light transmission portion, the normal portion, the correction portion, the light transmission portion, and the correction portion are opposite to an i-ray The phase difference of the wavelength light in the entire wavelength region (wavelength 365 nm) to g-ray (wavelength 436 nm) is 80 degrees or less, and more preferably 70 degrees or less.
再者，根據所使用之膜素材與膜厚，存在相對於透明基板而具有各種相位差之膜。例如，相對於透明基板而存在於正側具有相位差之膜，另一方面，亦存在於負側具有相位差之膜。因此，若在正側具有相位差之膜與在負側具有相位差之膜相鄰接，則兩者之相位差大於其中任一膜相對於透明基板之相位差。故而，於進行膜素材之選擇時，亦必需留意相位差產生之方向。Further, depending on the film material to be used and the film thickness, there are films having various retardation with respect to the transparent substrate. For example, there is a film having a phase difference on the positive side with respect to the transparent substrate, and a film having a phase difference on the negative side. Therefore, if the film having the phase difference on the positive side is adjacent to the film having the phase difference on the negative side, the phase difference between the two is larger than the phase difference of any of the films with respect to the transparent substrate. Therefore, when selecting the film material, it is also necessary to pay attention to the direction in which the phase difference is generated.
於此，圖4中例示有半透光膜之材料與相對於其穿透率之相位偏移量的關係。Here, the relationship between the material of the semi-transmissive film and the phase shift amount with respect to the transmittance thereof is exemplified in FIG.
縱軸不相對於透明基板之i射線之相位偏移量，橫軸為穿透率。穿透率越低則膜厚越大。膜厚越大，則相位偏移量亦越大。於此，例如，當使用MoSi膜作為半透光膜(正常部)時，在穿透率為25%~80%之範圍內，相對於透明基板之相位偏移量未滿+(正)20度。使用有該種MoSi膜之半透光部在與透明基板之相位差較小時為較佳者。The vertical axis does not have a phase shift amount with respect to the i-ray of the transparent substrate, and the horizontal axis represents the transmittance. The lower the penetration rate, the larger the film thickness. The larger the film thickness, the larger the phase shift amount. Here, for example, when a MoSi film is used as the semi-transmissive film (normal portion), the phase shift amount with respect to the transparent substrate is less than + (positive) 20 in the range of the transmittance of 25% to 80%. degree. It is preferable that the semi-transmissive portion having such a MoSi film is small when the phase difference from the transparent substrate is small.
另一方面，於該MoSi半透光膜上產生有缺陷，藉由以FIB並使用芘氣體所形成之碳膜來修正該部分。此時，如圖所示，所形成之修正膜相對於穿透率之相位偏移量較大地變動，例如，當穿透率為30%時，相對於透明基板之相位差超出80度。根據本發明者之研究發現，當為該相位差時，在與透光部之邊界及與正常部之邊界上容易產生暗線，於圖3(B)之修正方法中，或者根據穿透率而在圖3(B)與(C)之任一修正方法中，均會成為容易產生上述不良之遮罩圖案。On the other hand, a defect is generated in the MoSi semi-transmissive film, and the portion is corrected by a carbon film formed by using FIB and a helium gas. At this time, as shown in the figure, the phase shift amount of the formed correction film with respect to the transmittance greatly fluctuates. For example, when the transmittance is 30%, the phase difference with respect to the transparent substrate exceeds 80 degrees. According to the study by the inventors, it is found that when the phase difference is obtained, dark lines are easily generated at the boundary with the light transmitting portion and at the boundary with the normal portion, in the correction method of FIG. 3(B), or according to the transmittance. In any of the correction methods of FIGS. 3(B) and (C), the mask pattern which is likely to cause the above-described defects is formed.
此外，關於使用雷射CVD法所形成之Cr修正膜之相位偏移量，如圖4所示，較上述FIB碳膜而言，相位偏移量在正側更大，於使用圖3(B)之修正方法時，或者於使用圖3(B)及(C)中之任一修正方法時，成為容易產生上述不良之遮罩圖案。Further, regarding the phase shift amount of the Cr correction film formed by the laser CVD method, as shown in FIG. 4, the phase shift amount is larger on the positive side than the above FIB carbon film, and FIG. 3 (B) is used. When the correction method is used, or when any of the correction methods of FIGS. 3(B) and (C) is used, the mask pattern which is likely to cause the above-described defects is obtained.
因此，若使用圖4所示之MoSi系之膜進行修正，則於至少20%~80%之穿透率範圍內，相對於透光部之相位差為20度以下，從而在修正部與透光部之邊界上不會產生暗線。故而，於使用該光罩在光阻膜上曝光而形成光阻圖案時，可形成良好之形狀之光阻圖案。總之，修正膜包括含有鉬與矽之材料為宜。Therefore, if the MoSi-based film shown in FIG. 4 is used for correction, the phase difference with respect to the light-transmitting portion is 20 degrees or less in a range of at least 20% to 80%, so that the correction portion and the transparent portion are No dark lines are created on the boundary of the light. Therefore, when the photomask is exposed on the photoresist film to form a photoresist pattern, a photoresist pattern having a good shape can be formed. In short, the correction film preferably comprises a material containing molybdenum and niobium.
進而，可使用MoSi膜作為半透光膜(正常部)，因此在將MoSi系膜用於修正膜時，在正常部與修正部之邊界上相位差亦為70度以下(實際上為20度以下)，因而即便進行如上述圖3(C)之局部之修正，正常部與修正部之間之相位差亦不會成為問題。Further, since the MoSi film can be used as the semi-transmissive film (normal portion), when the MoSi-based film is used for the correction film, the phase difference between the normal portion and the correction portion is also 70 degrees or less (actually 20 degrees). In the following), even if the correction as in the above-mentioned FIG. 3(C) is performed, the phase difference between the normal portion and the correction portion does not become a problem.
進而，如上所述，使用已將於半透光部所產生之缺陷進行適當修正後之多調式光罩而於上述圖1所示之被轉印體上進行圖案轉印，藉此可抑制TFT-LCD等之電子元件所產生之不良，從而可實現較高之良率與穩定之元件生產性。Further, as described above, pattern transfer is performed on the transfer target shown in FIG. 1 by using a multi-mode mask which has been appropriately corrected by defects generated in the semi-transmissive portion, thereby suppressing TFT - Defects caused by electronic components such as LCDs, thereby achieving high yield and stable component productivity.
其次，對多調式光罩之製造方法予以說明。Next, a method of manufacturing a multi-mode mask will be described.
作為製造對象之多調式光罩包括藉由分別對形成於透明基板上之至少半透光膜與遮光膜進行圖案加工而形成有遮光部、透光部、及半透光部之轉印圖案，對經該轉印圖案而穿透之曝光光量加以控制，藉以於被轉印體上之光阻膜上形成2個以上之具有不同光阻殘膜值的光阻圖案。該多調式光罩之製造方法包括：準備步驟，準備於上述透明基板上形成有至少半透光膜與遮光膜之光罩基底；圖案化步驟，利用光微影法分別對上述半透光膜與上述遮光膜進行圖案加工，藉以形成包括遮光部、透光部、及半透光部之轉印圖案；及修正步驟，修正所形成之上述轉印圖案中產生之缺陷。於上述修正步驟中，在上述半透光膜之脫落部、或者已去除上述半透光膜或上述遮光膜之去除部上形成修正膜而成為修正部。再者，使上述透光部與上述修正部之相對於從i射線(波長365 nm)至g射線(波長436 nm)之整個波長區域之波長光的相位差為80度以下。The multi-mode mask to be manufactured includes a transfer pattern in which a light-shielding portion, a light-transmitting portion, and a semi-transmissive portion are formed by patterning at least a semi-transmissive film and a light-shielding film formed on a transparent substrate, respectively. The amount of exposure light transmitted through the transfer pattern is controlled to form two or more photoresist patterns having different photoresist residual film values on the photoresist film on the transfer target. The manufacturing method of the multi-modular reticle includes: a preparation step of preparing a reticle substrate on which at least a semi-transmissive film and a light shielding film are formed on the transparent substrate; and a patterning step of respectively arranging the semi-transparent film by photolithography The light-shielding film is patterned to form a transfer pattern including a light-shielding portion, a light-transmitting portion, and a semi-transmissive portion, and a correction step of correcting defects generated in the formed transfer pattern. In the above-described correction step, the correction film is formed on the detached portion of the semi-transmissive film or the removed portion of the semi-transmissive film or the light-shielding film, and becomes a correction portion. Further, the phase difference between the light transmitting portion and the correction portion with respect to the wavelength light from the i-ray (wavelength 365 nm) to the g-ray (wavelength 436 nm) is 80 degrees or less.
圖2係表示多調式光罩之製造步驟之一例的剖面圖。Fig. 2 is a cross-sectional view showing an example of a manufacturing procedure of a multi-tone mask.
所使用之光罩基底1中，於透明基板14上依序形成有例如包含MoSi之材料之半透光膜16與遮光膜15。再者，遮光膜15為例如以Cr為主成分之遮光層15a與包含Cr之氧化物等之防反射層15b的積層構成(參照圖2(a))。In the photomask substrate 1 to be used, a semi-transmissive film 16 and a light shielding film 15 made of, for example, a material containing MoSi are sequentially formed on the transparent substrate 14. In addition, the light-shielding film 15 is a laminated structure of the light-shielding layer 15a which has Cr as a main component, and the antireflection layer 15b which consists of oxides of Cr, etc. (FIG. 2 (a)).
首先，於該光罩基底1上塗佈光阻而形成光阻膜17(參照圖2(b))。作為上述光阻，使用正型光阻。First, a photoresist is applied onto the mask substrate 1 to form a photoresist film 17 (see FIG. 2(b)). As the above photoresist, a positive photoresist is used.
然後，進行第1次描繪。描繪中使用雷射光。對光阻膜17描繪特定之元件圖案(例如在與遮光部對應之區域上形成有光阻圖案之類的圖案)，並於描繪後進行顯影，藉此形成與遮光部之區域對應之光阻圖案17a(參照圖2(c))。Then, the first drawing is performed. Laser light is used in the depiction. A specific element pattern (for example, a pattern in which a photoresist pattern is formed on a region corresponding to the light shielding portion) is drawn on the photoresist film 17 and developed after being drawn, thereby forming a photoresist corresponding to the region of the light shielding portion. Pattern 17a (see Fig. 2(c)).
其次，將上述光阻圖案17a作為遮罩，使用公知的蝕刻法對已曝光之透光部及半透光部區域上之遮光膜15進行蝕刻(參照圖2(d))。於此，作為蝕刻，使用濕式蝕刻。再者，MoSi半透光膜相對於Cr系遮光膜之蝕刻而具有耐性。此處，殘存之光阻圖案被去除(參照圖2(e))。Next, the photoresist pattern 17a is used as a mask, and the light-shielding film 15 on the exposed light-transmitting portion and the semi-light-transmitting portion region is etched by a known etching method (see FIG. 2(d)). Here, as etching, wet etching is used. Further, the MoSi semi-transmissive film is resistant to etching by the Cr-based light-shielding film. Here, the remaining photoresist pattern is removed (refer to FIG. 2(e)).
接下來，於基板整個面上形成與上述相同之光阻膜，進行第2次描繪。於第2次描繪中，描繪在至少半透光部區域上形成有光阻圖案(圖中在遮光部及半透光部區域上形成有光阻圖案)之類的特定圖案。於描繪後進行顯影，藉此在與至少半透光部對應之區域上形成光阻圖案18a(參照圖2(f))。Next, a photoresist film similar to the above was formed on the entire surface of the substrate, and the second drawing was performed. In the second drawing, a specific pattern in which a photoresist pattern (a photoresist pattern is formed on the light shielding portion and the semi-light transmission portion region in the figure) is formed in at least the semi-transmissive portion region. Development is performed after drawing, whereby the photoresist pattern 18a is formed on a region corresponding to at least the semi-transmissive portion (see FIG. 2(f)).
其次，將上述光阻圖案18a作為遮罩，對已曝光之透光部區域上之半透光膜16進行蝕刻，使透明基板14曝光而形成透光部(參照圖2(g))。然後，去除殘存之光阻圖案，藉此，製造出於透明基板14上形成有轉印圖案之多調式光罩(3階遮罩)10(參照圖2(h))，該轉印圖案包括：包含半透光膜16與遮光膜15之積層膜的遮光部11、透明基板14曝光之透光部12、及包含半透光膜16之半透光部13。Next, the photoresist pattern 18a is used as a mask, and the semi-transmissive film 16 on the exposed light-transmitting portion is etched to expose the transparent substrate 14 to form a light-transmitting portion (see FIG. 2(g)). Then, the remaining photoresist pattern is removed, whereby a multi-tone mask (3rd order mask) 10 (refer to FIG. 2(h)) for forming a transfer pattern on the transparent substrate 14 is manufactured, and the transfer pattern includes The light shielding portion 11 including the laminated film of the semi-transmissive film 16 and the light shielding film 15, the light transmitting portion 12 exposed by the transparent substrate 14, and the semi-light transmitting portion 13 including the semi-transmissive film 16.
又，亦可藉由以下之製造方法來製造多調式光罩。Further, a multi-mode mask can be manufactured by the following manufacturing method.
(1)準備於透明基板上依序積層有半透光膜及遮光膜之光罩基底，於該光罩基底上形成與遮光部及半透光部對應之區域之光阻圖案，將該光阻圖案作為遮罩，對已曝光之遮光膜及半透光膜進行蝕刻，由此形成透光部。其次，於至少包含遮光部之區域上形成光阻圖案，將該光阻圖案作為遮罩，對已曝光之遮光膜進行蝕刻，由此形成半透光部及遮光部。藉此，可獲得於透明基板上形成有包含半透光膜之半透光部、包含半透光膜與遮光膜之積層膜之遮光部、及透光部的多調式光罩。(1) a photomask substrate in which a semi-transmissive film and a light-shielding film are sequentially laminated on a transparent substrate, and a photoresist pattern in a region corresponding to the light-shielding portion and the semi-transmissive portion is formed on the mask substrate, and the light is formed The resist pattern is used as a mask to etch the exposed light-shielding film and the semi-transmissive film, thereby forming a light-transmitting portion. Next, a photoresist pattern is formed on a region including at least the light-shielding portion, and the exposed light-shielding film is etched by using the photoresist pattern as a mask to form a semi-transmissive portion and a light-shielding portion. Thereby, a multi-tone mask in which a semi-transmissive portion including a semi-transmissive film, a light-shielding portion including a laminated film of a semi-transparent film and a light-shielding film, and a light-transmitting portion can be formed on the transparent substrate.
(2)準備於透明基板上形成有遮光膜之光罩基底，於該光罩基底上形成與遮光部對應之區域之光阻圖案，將該光阻圖案作為遮罩，對已曝光之遮光膜進行蝕刻，由此形成遮光膜圖案。其次，去除光阻圖案，之後於基板之整個面上成膜半透光膜。然後，在與遮光部及半透光部對應之區域上形成光阻圖案，將該光阻圖案作為遮罩，對已曝光之半透光膜進行蝕刻，由此形成透光部及半透光部。藉此，可獲得於透明基板上形成有包含半透光膜之半透光部、包含遮光膜與半透光膜之積層膜之遮光部、及透光部的多調式光罩。(2) preparing a mask base on which a light-shielding film is formed on a transparent substrate, forming a photoresist pattern on a region corresponding to the light-shielding portion on the mask substrate, and using the photoresist pattern as a mask to expose the light-shielding film Etching is performed, thereby forming a light shielding film pattern. Next, the photoresist pattern is removed, and then a semi-transmissive film is formed on the entire surface of the substrate. Then, a photoresist pattern is formed on a region corresponding to the light shielding portion and the semi-light transmitting portion, and the exposed light pattern is used as a mask to etch the exposed semi-transmissive film, thereby forming a light transmitting portion and a semi-transparent light. unit. Thereby, a multi-tone mask in which a semi-transmissive portion including a semi-transmissive film, a light-shielding portion including a laminated film of the light-shielding film and the semi-transmissive film, and a light-transmitting portion are formed on the transparent substrate can be obtained.
(3)與上述(2)相同，於在透明基板上形成有遮光膜之光罩基底上，形成與遮光部及透光部對應之區域之光阻圖案，將該光阻圖案作為遮罩，對已曝光之遮光膜進行蝕刻，由此使與半透光部對應之區域之透明基板露出。其次，去除光阻圖案，之後於基板之整個表面上成膜半透光膜，在與遮光部及半透光部對應之區域上形成光阻圖案，將該光阻圖案作為遮罩，對已曝光之半透光膜(及半透光膜與遮光膜)進行蝕刻，藉此亦可形成透光部與遮光部、及半透光部。(3) In the same manner as in the above (2), a photoresist pattern is formed on a mask base on which a light-shielding film is formed on a transparent substrate, and a photoresist pattern is formed as a mask. The exposed light-shielding film is etched to expose the transparent substrate in the region corresponding to the semi-transmissive portion. Next, the photoresist pattern is removed, and then a semi-transmissive film is formed on the entire surface of the substrate, and a photoresist pattern is formed on a region corresponding to the light shielding portion and the semi-light transmitting portion, and the photoresist pattern is used as a mask. The exposed semi-transmissive film (and the semi-transmissive film and the light-shielding film) are etched, whereby the light-transmitting portion, the light-shielding portion, and the semi-transmissive portion can be formed.
於修正所形成之轉印圖案中產生之缺陷的修正步驟中，在半透光膜之脫落部、或者已去除半透光膜或遮光膜之去除部上形成修正膜而成為修正部。於修正膜之形成中，可適當使用雷射CVD。例如在形成MoSi系之修正膜時，於導入有Mo原料與Si原料之混合氣體環境中照射雷射光束，從而可形成MoSi成分膜。In the correction step of correcting the defect generated in the formed transfer pattern, the correction film is formed on the detached portion of the semi-transmissive film or the removed portion of the semi-transmissive film or the light-shielding film to be a correction portion. In the formation of the correction film, laser CVD can be suitably used. For example, when a MoSi-based correction film is formed, a laser beam is irradiated in a mixed gas atmosphere in which a Mo material and a Si material are introduced, whereby a MoSi component film can be formed.
作為Mo原料，可使用六羰基鉬Mo(CO)6 、六氯化鉬MoCl6 等。又，作為Si原料，可使用單矽烷SiH4 、四氯化矽SiCl4 、四甲基矽烷Si(CH3 )4 、六甲基二矽烷(Hexamethyldisilane) Si(CH3 )3 NSi(CH3 )3 等。As the Mo raw material, molybdenum hexacarbonyl Mo(CO) 6 , molybdenum hexachloride MoCl 6 or the like can be used. Further, as the Si raw material, monodecane SiH 4 , hafnium tetrachloride SiCl 4 , tetramethyldecane Si(CH 3 ) 4 , hexamethyldioxane (Hexamethyldisilane) Si(CH 3 ) 3 NSi(CH 3 ) can be used. 3 and so on.
最好是將MoSi系(MoSix 、MoSiN、MoSiON、MoSiC等)之膜用於半透光膜(正常部)，並對修正膜使用以雷射CVD法而成膜之MoSi系(MoSix 、MoSiC、MoSiOC、MoSiCl等)之膜。此時，可使透光部與修正部、修正部與正常部、正常部與透光部之相對於i射線~g射線之波長光的相位差均為70度以下，並且藉由進行膜厚與組成之選擇而可使該相位差進一步變小(例如50度以下，更佳者為30度以下)。Preferably, a film of MoSi (MoSi x , MoSiN, MoSiON, MoSiC, etc.) is used for the semi-transmissive film (normal portion), and a MoSi system (MoSi x , which is formed by a laser CVD method) is used for the correction film. A film of MoSiC, MoSiOC, MoSiCl, etc.). In this case, the phase difference between the light-transmitting portion, the correction portion, the correction portion, the normal portion, the normal portion, and the light-transmitting portion with respect to the wavelength light of the i-ray to the g-ray is 70 degrees or less, and the film thickness is performed. The phase difference can be further reduced by the selection of the composition (for example, 50 degrees or less, more preferably 30 degrees or less).
於成膜時，選擇預先特定之Si原料與Mo原料，並預先掌握成膜時之雷射之劑量(與膜厚之間具有關聯)與穿透率之關係，根據其資料而成膜。In the film formation, a predetermined Si raw material and a Mo raw material are selected, and the relationship between the dose of the laser (associated with the film thickness) and the transmittance at the time of film formation is grasped in advance, and a film is formed based on the data.
且說，如上所述，當使用多調式光罩而於被轉印體上進行圖案轉印時所用之曝光機例如為液晶顯示裝置製造用者時，一般會使用i射線~g射線(365 nm~436 nm)左右之波長區域。又，曝光機之分光特性於較多情形時對於各個裝置未必固定，例如，即便具有於i射線~g射線之整個波長區域之曝光光，亦會存在i射線之強度最大之曝光機、g射線之強度最大之曝光機等。因此，即便為預先以使例如i射線之穿透率在半透光膜之正常部與修正部相等之方式而設定的光罩，但若其係使用有穿透率波長相依性在正常部與修正部不同之膜材料者，則在將其應用於g射線或h射線之強度較大的曝光機時，亦未必顯示該遮罩之正常部與修正部為相等之穿透率。因此，藉由該遮罩而形成於被轉印體上之轉印圖案成為正常部與修正部之光阻殘膜值不同者，從而使用該光阻圖案進行蝕刻時之條件設定變得困難。In addition, as described above, when an exposure machine used for pattern transfer on a transfer target using a multi-tone mask is, for example, a liquid crystal display device manufacturer, i-ray to g-ray (365 nm~ is generally used). The wavelength region around 436 nm). Moreover, the spectral characteristics of the exposure machine are not necessarily fixed for each device in many cases. For example, even if there is exposure light in the entire wavelength region of the i-ray to the g-ray, there is an exposure machine and g-ray having the highest intensity of the i-ray. The most powerful exposure machine. Therefore, even if the mask is set so that the normal portion of the semi-transmissive film is equal to the correction portion, for example, the transmittance of the i-ray is used, the wavelength dependence of the wavelength is used in the normal portion. When the film material having different correction portions is applied to an exposure machine having a large intensity of g-rays or h-rays, the transmittance between the normal portion and the correction portion of the mask is not necessarily displayed. Therefore, the transfer pattern formed on the transfer target by the mask is different from the photoresist residual film value of the normal portion and the correction portion, and it is difficult to set the conditions for etching using the photoresist pattern.
於此，所謂修正部與正常部之2個半透光部之穿透率波長相依性實質上相等，係指由於各個半透光部中所使用之膜構成而於i射線~g射線之範圍內之穿透率波長相依性之變化曲線大致平行。其包括例如在使i射線~g射線之範圍內之穿透率變化近似於直線時，該直線之斜率大致相等的情況。於此，所謂直線之斜率大致相等，係指彼此之斜率之差異為5%/100 nm以內，較佳者為2%/100 nm以內，更佳者為1%/100 nm。Here, the wavelength dependence of the transmittance of the two semi-transmissive portions of the correction portion and the normal portion is substantially equal, and refers to the range of the i-ray to the g-ray due to the film configuration used in each of the semi-transmissive portions. The curves of the wavelength dependence of the penetration rate are substantially parallel. This includes, for example, a case where the slope of the straight line is approximately equal when the transmittance change in the range of the i-ray to the g-ray is approximated to a straight line. Here, the slopes of the straight lines are substantially equal, and the difference between the slopes of the straight lines is 5%/100 nm or less, preferably 2%/100 nm or less, and more preferably 1%/100 nm.
此外，如圖5所示，根據本發明者之研究，由於在以雷射CVD法所形成之修正膜中之Cr膜而使i射線~g射線之波長區域之穿透率變化較大。另一方面，將濺鍍成膜所形成之MoSi半透光膜之不同膜厚的穿透率波長相依性表示於圖6中。假設於該MoSi半透光膜上所產生之缺陷部分上以雷射CVD法而形成有Cr之修正膜，則無法忽視由曝光機之分光特性之不同所引起之穿透率的變動。Further, as shown in FIG. 5, according to the study of the present inventors, the transmittance of the wavelength region of the i-ray to g-ray is largely changed by the Cr film in the correction film formed by the laser CVD method. On the other hand, the wavelength dependence of the transmittance of the different film thicknesses of the MoSi semi-transmissive film formed by sputtering into a film is shown in Fig. 6. It is assumed that a correction film of Cr is formed by a laser CVD method on a defect portion generated on the MoSi semi-transmissive film, and variation in transmittance due to a difference in spectral characteristics of the exposure machine cannot be ignored.
又，將由FIB所形成之碳膜之不同膜厚的穿透率之i射線~g射線波長相依性表示於圖7中。由FIB所形成之碳膜之i射線~g射線之波長相依性與MoSi膜類似，i射線~g射線之穿透率差為6%以下，或者斜率為8.5%以下。然而，如上所述(圖4)，由FIB所形成之碳膜與MoSi膜之正常部之相位差有相當差異，故而難以適用於例如穿透率30%以下之半透光部。Further, the i-ray to g-ray wavelength dependence of the transmittance of the film thickness of the carbon film formed by the FIB is shown in Fig. 7 . The wavelength dependence of the i-ray to g-ray of the carbon film formed by the FIB is similar to that of the MoSi film, and the difference in transmittance between the i-ray and the g-ray is 6% or less, or the slope is 8.5% or less. However, as described above (Fig. 4), the phase difference between the carbon film formed by the FIB and the normal portion of the MoSi film is quite different, so that it is difficult to apply to, for example, a semi-transmissive portion having a transmittance of 30% or less.
另一方面，若使用MoSi系之材料作為修正膜並以雷射CVD法而成膜，則可使與用於半透光部(正常部)之MoSi膜之i射線~g射線的相位差為70度以下，且亦可使i射線~g射線之穿透率差為6%以下，而且對於穿透率波長相依性上亦可為實質上相等之值，故而成為兩者實質上近似之光學特性。因此，修正部可具有與正常部大致相同實效之半色調特性，作為多調式光罩為有利。On the other hand, when a MoSi-based material is used as the correction film and formed by a laser CVD method, the phase difference between the i-ray and the g-ray of the MoSi film used for the semi-transmissive portion (normal portion) can be 70 degrees or less, and the difference between the transmittance of the i-ray and the g-ray is 6% or less, and the wavelength dependence of the transmittance may be substantially equal, so that the optical is substantially similar to the two. characteristic. Therefore, the correction portion can have substantially the same halftone characteristics as the normal portion, and is advantageous as a multi-tone mask.
再者，於上述多調式光罩之製造方法中，關於上述正常部與上述修正部之相對於從i射線至g射線之整個波長區域之波長光的相位差，宜為80度以下，較佳者為70度以下。特別好的是，上述正常部與上述透光部、上述正常部與上述修正部、上述透光部與上述修正部之相對於從i射線至g射線之整個波長區域之波長光的相位差均為80度以下，更佳者為70度以下。Furthermore, in the method of manufacturing the multi-tone mask, the phase difference between the normal portion and the correction portion with respect to the wavelength light from the i-ray to the g-ray is preferably 80 degrees or less. Those are below 70 degrees. Particularly preferably, a phase difference between the normal portion and the light transmitting portion, the normal portion, the correction portion, the light transmitting portion, and the correction portion with respect to wavelength light from the entire wavelength region from the i-ray to the g-ray is It is 80 degrees or less, and more preferably 70 degrees or less.
1．．．光罩基底1. . . Photomask base
10．．．多調式光罩10. . . Multi-tone mask
11．．．遮光部11. . . Shading
12．．．透光部12. . . Translucent part
13．．．半透光部13. . . Semi-transparent part
14．．．透明基板14. . . Transparent substrate
15．．．遮光膜15. . . Sunscreen
15a．．．遮光層15a. . . Shading layer
15b．．．防反射層15b. . . Anti-reflection layer
16．．．半透光膜16. . . Semi-transparent film
17．．．光阻膜17. . . Photoresist film
17a、18a、23．．．光阻圖案17a, 18a, 23. . . Resistive pattern
20．．．被轉印體20. . . Transferred body
21．．．基板twenty one. . . Substrate
22A、22B．．．膜22A, 22B. . . membrane
30、33．．．修正膜30, 33. . . Correction film
31、32．．．粗線31, 32. . . Thick line
圖1係用於說明使用有多調式光罩之圖案轉印方法之剖面圖。Fig. 1 is a cross-sectional view for explaining a pattern transfer method using a multi-tone mask.
圖2(a)~(h)係表示多調式光罩之製造步驟之一例的剖面圖。2(a) to 2(h) are cross-sectional views showing an example of a manufacturing procedure of a multi-mode mask.
圖3(A)~(E)係具有典型的TFT圖案作為轉印圖案之多調式光罩的平面圖。3(A) to (E) are plan views of a multi-tone mask having a typical TFT pattern as a transfer pattern.
圖4係表示半透光膜之材料及相對於其穿透率之相位偏移量之關係的示圖。Fig. 4 is a graph showing the relationship between the material of the semi-transmissive film and the phase shift amount with respect to the transmittance.
圖5係表示以雷射CVD法所形成之Cr膜之穿透率之i射線~g射線波長相依性的示圖。Fig. 5 is a graph showing the dependence of the transmittance of the Cr film formed by the laser CVD method on the wavelength of the i-ray to the g-ray.
圖6係表示MoSi半透光膜之穿透率之i射線~g射線波長相依性的示圖。Fig. 6 is a graph showing the dependence of the transmittance of the MoSi semi-transmissive film on the i-ray to g-ray wavelength.
圖7係表示以FIB所形成之碳膜之穿透率之i射線~g射線波長相依性的示圖。Fig. 7 is a graph showing the dependence of the i-ray to g-ray wavelength of the transmittance of the carbon film formed by FIB.
11．．．遮光部11. . . Shading
12．．．透光部12. . . Translucent part
13．．．半透光部13. . . Semi-transparent part
14．．．透明基板14. . . Transparent substrate
15．．．遮光膜15. . . Sunscreen
16．．．半透光膜16. . . Semi-transparent film
30、33．．．修正膜30, 33. . . Correction film
31、32．．．粗實線31, 32. . . Thick solid line
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| JP6557638B2 (en) * | 2016-07-06 | 2019-08-07 | 株式会社エスケーエレクトロニクス | Halftone mask and halftone mask blanks |
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