201111903 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種在液晶顯示裝置（Liquid Crystal Display，以下稱作LCD)之製造等中所用之多調式光罩、多 調式光罩之製造方法、及圖案轉印方法，尤其係關於一種 在薄膜電晶體液晶顯示裝置之製造所用之適合用於薄膜電 晶體之製造的多調式光罩、多調式光罩之製造方法、及圖 案轉印方法。 【先前技術】 於LCD之領域中’薄膜電晶體液晶顯示裝置（Thin Film[Technical Field] The present invention relates to a multi-tone mask and a multi-module photomask used in the manufacture of a liquid crystal display device (hereinafter referred to as LCD). And a pattern transfer method, in particular, a multi-tone mask, a multi-mode mask manufacturing method, and a pattern transfer method which are suitable for the manufacture of a thin film transistor for use in the manufacture of a thin film transistor liquid crystal display device. [Prior Art] In the field of LCDs, thin film transistor liquid crystal display devices (Thin Film)
Transistor Liquid Crystal Display，以下稱作 TFT-LCD)相較 CRT(Cathode Ray Tube，陰極射線管）而言，具有易形成為 薄型且消耗電力低之優點，故當前正在迅速地向商品化發 展。TFT-LCD具有如下結構：於排列成矩陣狀之各像素中 排列有TFT之結構之TFT基板、與對應各像素而排列有紅 色 '綠色、及藍色之像素圖案之彩色濾光片在其間介入有 液晶相之情形下重疊的概略結構。關於TFT-LCD ,其製造 步驟數多，先前，僅TFT基板便使用5〜6個光罩而製造。於 。亥種狀况下，在用於液晶顯示裝置之薄膜電晶體（TFT)之製 化中為了減少遮罩之使用片數以進行效率良好的製造， 已知使用所謂的多調式光罩（多調式遮罩）。 立所謂該多調式光罩’係指包括在透明基板上形成有遮光 P透光部、及半透光部之轉印圖案，且在使用該光罩將 圖案轉印至被轉印體上時，對經該轉印圖案而穿透之曝光 145498.doc 201111903 光量加以控制’藉以於被轉印體上之光阻膜上形成2個以上 之具有不同光阻殘膜值的光阻圖案。 於曰本專利特開2004_3095 15號公報（專利文獻丨）中，揭示 有一種灰階遮罩（gray tone mask)，其目的在於藉由曝光機 之解像極限以下之微細的遮光圖案而減少穿透該區域之光 之穿透量’選擇性地改變光阻之膜厚。而且記載有：當於 灰階部產生有黑缺陷時，為了使該黑缺陷成為能獲得使上 述灰階部與正常之灰階部具有相同之灰階效果的膜厚而藉 由蝕刻來減少膜厚。又，記載有：當於灰階部產生白缺陷 時，藉由FIB(F〇cuSed Ion Beam，聚焦離子束）而形成能獲 得使上述灰階部與正常之灰階部具有相同之灰階效果的半 穿透性修正膜。 又，於曰本專利特開2002_131888號公報（專利文獻2)中， 記載有：將氦氣作為載氣、將鉻（Cr)作為原料氣體並藉由雷 射CVD(Chemical Vapor Deposition ’化學氣相沈積）法而於 光罩之白缺陷部位形成膜之方法。 【發明内容】 對於上述的用於TFT製造等之多調式光罩，於其製造步 驟中，亦無法完全避免在包括半透光膜之半透光部中產生 缺陷。例如，於光罩基底之製造過程中，因在基板上形成 膜時所產生之缺陷、或者在利用有光微影之遮罩製造步驟 中異物之附著或光阻之針孔等各種理由而會產生脫落缺陷 (白缺陷）或剩餘缺陷（黑缺陷）。於此，將穿透率因膜圖案之 剩餘遮光膜成分之附著或者異物而變得低於特定穿透率 145498.doc 201111903 t = 1¾稱作黑缺陷’將穿透率因膜圖案之不足而變得高於 特定穿透率之缺陷稱作白缺陷。 、卜利文獻1中所5己載之使用有微細遮光圖案之灰階部 '行仏正時，會使曝光機之解像極限以下之遮光圖案被暈 、其、、°果必而推算貫際上成為何種穿透率而對被轉印體 之光阻進行曝光’並且為了達到與此相同之灰階效果而 要對產生有黑缺陷之部分進行減膜。該推算非常困難，若 不適切地進行穿透率調整，則會產生第二次的黑缺陷、白 ，°此外，嚴格而言，已減膜之部分之穿透光與正常之 微細遮光圖案之穿透光的相位不同，所以會因光之干涉而 引起穿透光之增減’實效的穿透率之推算變得越來越複 雜又，§修正灰階部之白缺陷時，在以FIB而成膜時，存 素材之制約，例如，使用芘等並藉由FIB所形成之碳系之 薄膜”正常部分之膜為不同的素材，因此會與正常之微細 圖案部分之穿透光產生相位差。 又，專利文獻2所揭示之以雷射CVD法而進行之缺陷修正 係以Cr為原料氣體而形成膜，因此在㈣光膜之缺陷修正 並.”、問題，但若原封不動地直接應用於在半透光部使用 有其他素材之半透光膜的多調式光罩，則縱然使用與半透 光膜相同之穿透率之Cr修正膜，亦有成為如下不合適之修 正遮罩之可能性：在修正部與正常部（無缺陷之正常之半透 光。卩）之邊界、或者修正部與透光部之邊界上，因相位差弓丨 起之干涉而導致穿透率降低。若使用該種修正遮罩，則無 法滿足半透光部所要求之穿透率容許範圍，有對遮罩使用 145498.doc 201111903 者產生不便之虞。此時，例如於TFT之通道部中，亦有發生 源極、沒極間之短路（short)而產生液晶顯示裝置之誤動作 的深刻問題。 另方面，當使用多調式光罩而在被轉印體上進行圖案 轉印時所使用之曝光機例如係液晶顯示裝置製造用遮罩 時，一般會使用i射線〜g射線（3 65 nm〜436 nm)左右之波長區 域°於該等之曝光中’―般需要進行較半導體裝置製造用 遮罩之面積更大的曝光，因此，^了確保光量而使用具有 波長區域而非單一波長之曝光光為有利。所以，於決定多 調式光罩之規格時’考慮曝光光所具有之曝光波長區域及 其強度分布，為了在使用特定之曝光光時可獲得所需之穿 透率而需要設計半透光部。 當於以如上所述之半透光膜而形成之半透光部所產生之 缺陷部位上形成修正膜時，對於所形成之修正膜若不考 慮上述半透光膜之光穿透率而適當地設計，則結果將於修 正膜部分產生黑缺陷或白缺陷之不良。進而，如上所述， 縱然使用與半透光膜為相同之穿透率之修正膜，但若在修 正u卩與正常部之邊界、或者修正部與透光部之邊界上具有 相位差’則亦會產生因干涉而導致的穿透率降低。另一方 面’當曝光機之曝光光較多時，未必於每個裝置中均一定。 例如，即便具有於i射線〜g射線之整個波長區域之曝光光， 亦會存在i射線之強度最大之曝光機、g射線之強度最大之 曝光機等。此外，曝光機之光源之波長特性會隨時間而變 化’故考慮到實際曝光時之曝光光之波長特性，若不設計[ 145498.doc 201111903 半透光膜及修正膜之光穿透特性，則難以生產出精度良好 之灰階遮罩。 ，本發明之第1目的在於’提供-種在包含半透光膜之半透 光。卩所產生之缺陷得到適當修正的多調式光罩。 又，本發明之第2目的在於，提供一種上述多調式光罩之 製造方法。 進而，本發明之第3目的在於，提供一種使用有上述多調 式光罩之圖案轉印方法。 為達成上述目的，本發明具有以下之構成。 (構成1) 一種多調式光罩，其包括藉由分別對形成於透明基板上 之至*^半透光膜與遮光膜進行圖案加工而形成有遮光部、 透光。卩、及半透光部之轉印圖案，對經該轉印圖案而穿透 之曝光光量加以控制，藉以於被轉印體上之光阻膜上形成2 個以上之具有不同光阻殘膜值的光阻圖案，其特徵在於： 上述遮光部係於上述透明基板上形成至少上述遮光膜而 成，上述透光部係使上述透明基板露出而形成，上述半透 光部包括：由形成於上述透明基板上之半透光膜構成之正 常部、及由形成於上述透明基板上之修正膜構成之修正 部，上述透光部與上述修正部之相對於從i射線（波長365 nm)至g射線（波長436 nm)之整個波長區域之波長光的相位 差為80度以下。 (構成2) 如構成1之多調式光罩，其中進而上述正常部與上述修正 I45498.doc 201111903 部之相對於從i射線（波長365 nm)至g射線（波長436 nm)之整 個波長區域之波長光的相位差為80度以下。 (構成3) 一種多調式光罩’其包括藉由分別對形成於透明基板上 之至少半透光膜與遮光膜進行圖案加工而形成有遮光部、 透光部、及半透光部之轉印圖案，對經該轉印圖案而穿透 之曝光光量加以控制，藉以於被轉印體上之光阻膜上形成2 個以上之具有不同光阻殘膜值的光阻圖案，其特徵在於： 上述遮光部係於上述透明基板上形成至少上述遮光膜而 成，上述透光部係使上述透明基板露出而形成，上述半透 光部包括：由形成於上述透明基板上之半透光膜構成之正 常部、及由形成於上述透明基板上之修正膜構成之修正 部，上述正常部與上述透光部、上述正常部與上述修正部、 上述透光部與上述修正部之相對於從丨射線（波長365 至 g射線（波長436 nm)之整個波長區域之波長光的相位差均為 80度以下。 (構成4) 如構成1至3中任—項之多調式光罩，其中上述半透光膜 包括含有石夕化翻化合物之材料。 (構成5) 如構成1至4中任—項之多調式光罩，其中上述修正膜包 括含有鉬與矽之材料。 (構成6) 如構成1至5中任一項之多調式光罩，其中上述遮光部^ 145498.doc 201111903 於上述透明基板上依序形成至少上述半透光膜與上述遮光 膜而成。 (構成7) 罩係：成1至6中任一項之多調式光罩，其中上述多調式光 膜電晶體製造用之光罩，上述遮光部包括與上述薄 膜電晶體之源極及沒極對應之部分，上述半透光部包括與 上述薄膜電晶體之通道對應之部分。 (構成8) 一一種圖案轉印方法’其特徵在於：使用如構成⑴中任 一項所述之多調式光罩並藉由曝光機而將上述轉印圖荦轉 印至被轉印體上。 得丨α茶轉 (構成9) 罩式光罩之製造方法’其特徵在於：該多調式光 ==別對形成於透明基板上之至少半透光膜與遮 之韓Η:宏、加工而形成有遮光部、透光部、及半透光部 :轉印圖案，對經該轉印圖案而穿透之曝光光量加以控 π以於被轉印體上之光阻膜上形成2個以上之具有不同 值的光阻圖案’該製造方法包括：準倩步驟，準 備於上述透明基; ν成有至少半透光膜與遮光膜之光罩 :L圖案化步驟，利用光微影法分別對上述半透光膜愈 上述遮光料行圖案加卫，藉㈣成包括 / 及半透光部之轉印圖案；及修正步驟，修正所透光; 轉印圖案中產生之缺陷；且於m不丰^成之上边 透光膜之脫落部、或者已去;修步驟中’在上述半 或者已去除上述半透光膜或上述遮光膜 I45498.doc 201111903 之去除部上形成修正膜而成為修正部，使上述透光部與上 述修正部之相對於從丨射線（波長365 nm)至g射線（波長436 nm)之整個波長區域之波長光的相位差為8〇度以下。 (構成10) 如構成9之多調式光罩之製造方法，其中進而使上述正常 部與上述修正部之相對於從丨射線（波長365 nm)至g射線（波 長436 nm)之整個波長區域之波長光的相位差為8〇度以下。 (構成11) 一種多調式光罩之製造方法，其特徵在於：該多調式光 罩包括藉由分別對形成於透明基板上之至少半透光膜與遮 光膜進行圖案加工而形成有遮光部、透光部、及半透光部 之轉印圖案，對經該轉印圖案而穿透之曝光光量加以控 制，藉以於被轉印體上之光阻膜上形成2個以上之具有不同 光阻殘膜值之光阻圖案，該製造方法包括：準備步驟，準 備於上述透明基板上形成有至少半透光膜與遮光膜之光罩 基底；圖案化步驟，利用光微影法分別對上述半透光膜與 上述遮光膜進行圖案加工，藉以形成包括遮光部、透光部、 及半透光部之轉印圖案；及修正步驟，修正所形成之上述 轉印圖案中產生之缺陷；且於上述修正步驟中，在上述半 透光膜之脫落部、或者已去除上料透光膜或上述遮光膜 之去除部上形成修正膜而成為修正部，使上述正常部與上 述透光部、上述正常部與上述修正部、上料光部與上述 修正部之相對於從i射線（波長365 11啦说線（波長心叫 之整個波長區域之波長光的相位差均為8〇度以下。 145498.doc • 11 - 201111903 (構成12) 如構成9至11中任一項之多調式光罩之製造方法，其中使 用包含石夕化翻化合物之材料來作為上述半&光膜之材質^ (構成13) 如構成9至12中任一項之多調式光罩之製造方法，其中上 述修正膜係藉由雷射CVD法所形成。 (構成14) 如構成12之多調式光罩之製造方法，其中上述修正膜係 藉由分別使用含有鉬之原料與含有矽之原料的雷射CVD法 所形成。 接下來’對本發明之效果予以說明。 於鄰接之透光部與修正部之邊界上，可抑制由相位差所 導致的穿料降低，㈣光罩於㈣㈣上所獲得之光阻 圖案成為所需之良好的形狀。當然，在製造TFT液晶顯示裝 置時’亦可抑制由通道部之短路所導致的動作不良等不便。 又，可獲得於半透光部所產生之缺陷得到適當修正之 調式光軍。 ,進而’使用如上所述之於半透光部所產生之缺陷得到適 當修正之乡調式料料轉㈣±進㈣ 抑制TFT_LCd等之電子元件中產峰夕尤白 错此了 一 子心电卞兀件f產生之不良，從而可實現較 局之良率與穩定之元件生產性。 【實施方式】 以下，根據圖式來說明本發明之若干實施形態。 圖1係用於說明使用有多調式光罩之圖案轉;;方法的剖 145498.doc -12- 201111903 面圖。圖1所示之多調式光罩10係用於製造例如液晶顯示裝 置（LCD)之薄膜電晶體（TFT)等之電子元件者，其係於圖丄 所示之被轉印體20上形成2個以上之膜厚呈階段性或連續 性不同之光阻圖案23者。此外，於圖1中，符號22A、22b 表示於被轉印體20上積層於基板21上之膜β 上述多調式光罩10表示除遮光部、透光部以外，還具有1 種半透光部之3階遮罩之例，具體而言，其包括如下部分而 構成：於使用該光罩1〇時遮蔽曝光光（穿透率大致為〇%)之 遮光部11 ;使透明基板14之表面曝光後之曝光光穿透之透 光部12;及當透光部之曝光光穿透率為1〇〇%時使穿透率降 低至20%〜80%、較佳者為2〇%〜6〇%左右之半透光部13。遮 光部11係於玻璃基板等之透明基板14上依序設置半透光性 之半透光膜16、與遮光性之遮光膜15而構成。又，半透光 部13係於透明基板14上形成上述半透光膜16而構成，其曝 光光（例如i射線〜g射線）之穿透率設定為低於透光部12。 作為上述半透光膜16，可舉出鉻化合物、矽化鉬化合物、 Si、W、A1等。其中，於鉻化合物中，有氧化鉻、氮 化鉻（CrNx)、氮氧化鉻（Cr〇xN)、氟化鉻（CrF〇、及於該等 中包含碳及氫者。又，作為矽化鉬化合物，除M〇Six以外， 還可使用MoSi之氮化物、氧化物、氧氮化物、碳化物等。 半透光膜16特別適宜包括含有矽化鉬化合物之膜素材。含 有矽化鉬化合物之膜素材在與用於遮光膜而有利之鉻系材 料之間具有蝕刻選擇性，於下述製造方法中，相對於對一 方之膜進行蝕刻之蝕刻媒體而言，另—方膜具有抗性， 145498.doc •13· 201111903 再者’半透光膜亦可 在蝕刻加工方面為極其優異之素材 積層。 作為上述遮光膜15 ’可皇屮广 & & i 举出 Cr、Si、W、A1等。較 物成分之材料。更佳者為表面具有Cr之氧化 = :rcr系化合物之層來作為防反射層，藉此可 提尚轉印圖案描繪時之籍声 精度抑制在遮罩使用時產生無用 之反射雜散光》遮光膜宜單獨 考與+透光膜積層而具有 光學密度3.0以上之遮光性者。 於使用上述多調式光罩10時’遮光部11實質上未使曝光 光穿透’透光部12使曝光光穿透，在半透光部13t曝光光 減少。因此，形成於被轉印㈣上之光阻膜（正型光阻膜） 在轉印後並經關糾形成光阻圖㈣，其對應於遮光部 Η之部分之膜厚變厚，對應於半透光部13之部分之膜厚變 薄，對應於透光部12之部分實質上未產生殘膜（參照圖丨）。 於該光阻圖案23中，將對應於半透光部13之部分之膜厚變 薄之效果在此稱作灰階效果。再者，當使用負型光阻時， 需要考慮與遮光部及透光部對應之光阻膜厚反轉之情形而 進行設計，此時亦可充分取得本發明之效果。 而且’於圖1所示之光阻圖案23中之無膜的部分，對被轉 印體20上之例如膜22Α及22Β實施第1蝕刻，利用灰化等去 除光阻圖案23中之膜較薄的部分，並於該部分上，對被轉 印體20上之例如膜22Β實施第2蝕刻。如此一來，使用i片多 調式光罩10(3階遮罩）來進行先前之2片光罩之步驟，從而遮 罩片數得以削減。 145498.doc •14· 201111903 上述多調式光罩ίο包括藉由分別對形成於透明基板上之 至少半透光膜與遮光膜進行圖案加工而形成有遮光部、透 光部、及半透光部之轉印圖案，對經該轉印圖案而穿透之 曝光光量加以控制，藉以於被轉印體上之光阻膜上形成2 個以上之具有不同光阻殘膜值之光阻圖案。於該多調式光 罩10中，上述遮光部係於上述透明基板上形成至少上述遮 光膜而成，上述透光部係使上述透明基板露出而形成上 述半透光部包括：由形成於上述透明基板上之半透光膜構 成之正常部、及由形成於上述透明基板上之修正膜構成之 修正部◎再者，將上述透光部與上述修正部之相對於從i射 線（波長365 nm)至g射線（波長436 nm)之整個波長區域之波 長光的袓位差設定為80度以下。 根據多調式光罩之製造方法，關於透明基板上之半透光 膜與遮光膜之順序，任一者在上方均無妨。關於多調式光 罩之製造方法，將於以下詳述。 不僅上述如圖1所示之除透光部、遮光部以外還具有】種 半透光部的3階遮罩，而且對於包括具有不同之曝光光穿透 率之2個半透光部的4階遮罩、或者具有4以上之階數之遮 罩’本發明亦可適當地實施。 上述多調式光罩10係適合應用於TFT製造者，遮光部包 含與TFT之源極及j：及極對應之部分，半透光部包含與之 通道對應之部分。 圖3係具有典型的TFT圖案作為轉印圖案之多調式光罩 r c 的平面圖。在與圖1相同之部位附上相同之符號。對於具有 145498.doc •15· 201111903 如圖所不之圖案之光罩，本發明取得顯著之效果。 例如圖1之剖面圖所示，多調式光罩宜含有以透光部、 光。卩半透光部、遮光部、透光部之順序而排列之部分 或者對於如圖3之圖案，宜含有朝一個方向(例如：：圖 3(A)中之虛線方向）以透光部、遮光部、半透光部、遮光部 半透光部、遮光部、透光部之順序而排列之部分。於圖1 及圖3之任一圖中，遮光部與半透光部、遮光部與透光部、1 半透光部與透光部分別含有鄰接部分。 。、 上述半透光部之曝光光穿透率係由半透光膜之獏素材與 膜厚而決定。此外，半透光部之曝光光相位以此處係指拍 對於穿透透明基板之光之相位的相位偏移）亦係由膜素材 與膜厚而決^。因此，對多調式光罩而言，可根據其用途、 及使用其所製造之元件（例如TFT_LCD)之製造範圍 (manufacturing margin)，來決定讓半透光部以怎樣的=素 材具有怎樣㈣厚。於該決定過程巾，必需考慮穿透率與 相位差雙方。即便考慮單獨之膜的穿透率，如若不考慮^ 由該半透光膜所形成之半透光部與其他部分（透光部、經修 正膜所修正之半透光部（即修正部））之鄰接部分上因產生: 相位差而發生干涉從而導致實際之穿透光量會局部減少， 則亦無法進行所需之精緻的圖案轉印。實際上，若鄰接部 之相位差大於特定範圍，則兩側之穿透光會於鄰接部相抵 而產生暗線。 於此，在圖3(A)所·.示之轉印圖案中之與由半透光膜“所 形成之通道部相當的部分（大致U字形之圖案）上產生有黑 145498.doc • 16· 201111903 缺陷或白缺陷。例如，黑缺陷係於半透光膜上殘留有剩餘 之遮光膜之情形，自缺陷係於所使用之正光阻上產生有針 孔且於半透光膜上產生有脫落之情形等。 對於黑缺陷之情形’可對產生有黑缺陷之部分進行雷射 …、射或FIB&、射’利用其能量而去除該部分，並於去除後之 部分重新形成修正膜。例如，關於在通道部所產生之黑缺 陷，亦可去除整個該通道部之半透光膜，並於整個通道部 形成修正膜30(參照圖3(Β))β或者，若於通道部所產生之黑 缺陷為較小者’則亦可僅去除黑缺陷部分，並對照去除後 之邛分之开> 狀而形成修正膜3〇(參照圖3(c))。 方面對於白缺陷之情形亦相同，可去除包含白缺 fe部分之整個通道部之半透光膜，並於整個通道部形成修 正膜’或者亦可去除白缺陷之部分及白缺陷之周邊部分的 半透光膜’並對照其形狀而於形狀整理後之部分上形成修 正膜。The Transistor Liquid Crystal Display (hereinafter referred to as a TFT-LCD) has an advantage of being easily formed into a thin type and having low power consumption compared with a CRT (Cathode Ray Tube), and is currently rapidly becoming commercialized. The TFT-LCD has a structure in which a TFT substrate having a structure in which TFTs are arranged in a matrix arranged in a matrix, and a color filter in which red-green and blue pixel patterns are arranged corresponding to respective pixels are interposed therebetween A schematic structure in which a liquid crystal phase overlaps. Regarding the TFT-LCD, the number of manufacturing steps is large. Previously, only the TFT substrate was manufactured using 5 to 6 masks. Yu. In the case of a thin film transistor (TFT) used for a liquid crystal display device, it is known to use a so-called multi-tone mask in order to reduce the number of used masks for efficient manufacturing. Mask). The term "the multi-mode mask" refers to a transfer pattern including a light-shielding P-transmissive portion and a semi-transmissive portion formed on a transparent substrate, and when the pattern is transferred onto the object to be transferred by using the mask The amount of light transmitted through the transfer pattern is controlled by the exposure 145498.doc 201111903, by which two or more photoresist patterns having different photoresist residual film values are formed on the photoresist film on the transfer target. In the Japanese Patent Laid-Open Publication No. 2004-3095 (Patent Document No.), a gray tone mask is disclosed, which aims to reduce wear by a fine light-shielding pattern below the resolution limit of an exposure machine. The amount of penetration of light through the region selectively changes the film thickness of the photoresist. Further, when a black defect is generated in the gray scale portion, the film is reduced by etching in order to obtain a film thickness which allows the gray scale portion to have the same gray scale effect as the normal gray scale portion. thick. Further, it is described that when a white defect is generated in the gray scale portion, the gray scale effect of the gray scale portion and the normal gray scale portion can be obtained by FIB (F〇cuSed Ion Beam). Semi-penetrating correction film. In Japanese Patent Laid-Open Publication No. 2002-131888 (Patent Document 2), it is described that helium gas is used as a carrier gas, chromium (Cr) is used as a material gas, and laser CVD (Chemical Vapor Deposition 'Chemical Gas Phase) is described. A method of forming a film on a white defect portion of a photomask by a deposition method. SUMMARY OF THE INVENTION In the above-described multi-modulation reticle for TFT fabrication or the like, in the manufacturing step, defects in the semi-transmissive portion including the semi-transmissive film are not completely prevented. For example, in the manufacturing process of the reticle base, various defects may occur due to defects generated when a film is formed on the substrate, or pinholes of adhesion or light resistance in a mask manufacturing step using light lithography. A detachment defect (white defect) or a residual defect (black defect) is generated. Here, the transmittance is lower than the specific transmittance due to adhesion of the remaining light-shielding film component of the film pattern or foreign matter. 145498.doc 201111903 t = 13⁄4 is called black defect', and the transmittance is insufficient due to the film pattern. A defect that becomes higher than a specific transmittance is called a white defect. In the case of the use of the gray-scale portion of the fine light-shielding pattern, the light-shielding pattern below the resolution limit of the exposure machine is dizzy, and the result is calculated. In order to achieve the same gray scale effect, the portion where the black defect is generated is subjected to film reduction. This calculation is very difficult. If the transmittance adjustment is unsuited, the second black defect and white will be generated. Moreover, strictly speaking, the part of the film that has been reduced is penetrated with the normal fine light-shielding pattern. The phase of the transmitted light is different, so the increase and decrease of the transmitted light due to the interference of light' is more complicated and the calculation of the actual penetration rate becomes more complicated. When the white defect of the gray-scale part is corrected, the FIB is used. In the case of film formation, the material is restricted, for example, a film of a normal portion of a carbon-based film formed by using FIB or the like is made of a different material, and thus a phase is formed with the light of the normal fine pattern portion. Further, the defect correction by the laser CVD method disclosed in Patent Document 2 uses Cr as a material gas to form a film. Therefore, the defect of the (4) photo film is corrected. However, if it is not directly For a multi-mode mask that uses a semi-transmissive film with other materials in the semi-transmissive portion, even if a Cr correction film having the same transmittance as that of the semi-transmissive film is used, there is an unsuitable modified mask as follows. The possibility: in the correction department and Often portion (the non-defective normal of the semipermeable light. Jie) of the boundary, and the boundary portion or the correction of a light-transmitting portion, the phase difference due to interference Shu bow resulting from the transmittance decreased. If such a modified mask is used, the allowable range of penetration required for the semi-transmissive portion cannot be satisfied, and there is an inconvenience in the use of the mask 145498.doc 201111903. At this time, for example, in the channel portion of the TFT, there is a problem that a short circuit between the source and the gate occurs, which causes a malfunction of the liquid crystal display device. On the other hand, when an exposure machine used for pattern transfer on a to-be-transferred body using a multi-tone mask is, for example, a mask for manufacturing a liquid crystal display device, i-rays to g-rays are generally used (3 65 nm~ The wavelength region around 436 nm) In these exposures, it is generally required to perform a larger exposure than the area of the mask for semiconductor device fabrication. Therefore, it is necessary to ensure the amount of light and use an exposure having a wavelength region instead of a single wavelength. Light is beneficial. Therefore, when determining the specification of the multi-mode mask, the area of the exposure wavelength and the intensity distribution of the exposure light are considered. In order to obtain the required penetration rate when a specific exposure light is used, it is necessary to design the semi-transmissive portion. When a correction film is formed on a defect portion generated by the semi-transmissive portion formed by the semi-transmissive film as described above, it is appropriate for the formed correction film not to consider the light transmittance of the semi-transmissive film. The ground design will result in defects in the black or white defects in the modified film portion. Further, as described above, even if a correction film having the same transmittance as that of the semi-transmissive film is used, if there is a phase difference between the boundary between the correction portion and the normal portion or the boundary between the correction portion and the light transmission portion, There is also a reduction in penetration due to interference. On the other hand, when the exposure light of the exposure machine is large, it is not necessarily fixed in each device. For example, even if there is exposure light in the entire wavelength region of the i-ray to g-ray, there is an exposure machine having the highest intensity of the i-ray, an exposure machine having the highest intensity of the g-ray, and the like. In addition, the wavelength characteristics of the light source of the exposure machine may change with time. Therefore, considering the wavelength characteristics of the exposure light during actual exposure, if the light transmission characteristics of the semi-transmissive film and the correction film are not designed, It is difficult to produce a gray scale mask with good precision. A first object of the present invention is to provide a semi-transmissive light containing a semi-transmissive film. A multi-mode mask with defects that are properly corrected. Further, a second object of the present invention is to provide a method of manufacturing the above-described multi-tone mask. Further, a third object of the present invention is to provide a pattern transfer method using the above-described multi-mode mask. In order to achieve the above object, the present invention has the following constitution. (Configuration 1) A multi-mode mask comprising a light-shielding portion and a light-transmitting layer formed by patterning a semi-transparent film and a light-shielding film formed on a transparent substrate, respectively. The transfer pattern of the 卩 and the semi-transmissive portion controls the amount of exposure light transmitted through the transfer pattern, thereby forming two or more different photoresist residual films on the photoresist film on the transfer target The light-resistance pattern is characterized in that the light-shielding portion is formed by forming at least the light-shielding film on the transparent substrate, the light-transmitting portion is formed by exposing the transparent substrate, and the semi-transmissive portion is formed by a normal portion of the semi-transmissive film on the transparent substrate; and a correction portion formed of a correction film formed on the transparent substrate, wherein the light transmitting portion and the correction portion are opposite to each other from an i-ray (wavelength 365 nm) The phase difference of the wavelength light in the entire wavelength region of the g-ray (wavelength 436 nm) is 80 degrees or less. (Configuration 2) The multi-modulation reticle of the first aspect, wherein the normal portion and the correction I45498.doc 201111903 portion are relative to the entire wavelength region from the i-ray (wavelength 365 nm) to the g-ray (wavelength 436 nm). The phase difference of the wavelength light is 80 degrees or less. (Configuration 3) A multi-mode mask comprising: forming a light-shielding portion, a light-transmitting portion, and a semi-transmissive portion by patterning at least a semi-transmissive film and a light-shielding film formed on a transparent substrate Printing a pattern to control the amount of exposure light transmitted through the transfer pattern, thereby forming two or more photoresist patterns having different photoresist residual film values on the photoresist film on the transfer target, wherein The light-shielding portion is formed by forming at least the light-shielding film on the transparent substrate, wherein the light-transmitting portion is formed by exposing the transparent substrate, and the semi-transmissive portion includes a semi-transparent film formed on the transparent substrate. a normal portion of the structure and a correction portion formed of a correction film formed on the transparent substrate, wherein the normal portion and the light transmission portion, the normal portion, the correction portion, the light transmission portion, and the correction portion are opposite to each other The phase difference of the wavelength light of the entire wavelength region of the wavelength 365 to the g-ray (wavelength 436 nm) is 80 degrees or less. (Configuration 4) The multi-tone mask of any one of the items 1 to 3, wherein the above The light-transmissive film includes a material containing a compound of the compound of the present invention. (Configuration 5) The multi-mode mask of any one of the items 1 to 4, wherein the correction film comprises a material containing molybdenum and niobium. The multi-mode mask of any one of 1 to 5, wherein the light-shielding portion 145498.doc 201111903 is formed by sequentially forming at least the semi-transmissive film and the light-shielding film on the transparent substrate. (Configuration 7) The multi-modular reticle according to any one of 1 to 6, wherein the light-shielding portion for manufacturing the multi-mode optical film transistor comprises: a portion corresponding to a source and a pole of the thin film transistor; The light portion includes a portion corresponding to the channel of the above-mentioned thin film transistor. (Configuration 8) A pattern transfer method is characterized in that: the multi-tone mask according to any one of (1) is used and by an exposure machine The transfer pattern is transferred onto the transfer target. The method of manufacturing the cover type mask is characterized in that the multi-tone light is formed on the transparent substrate. At least a semi-transparent film and a masked Han: macro, processed to form a light-shielding portion, a light-transmitting portion, and a semi-transmissive portion: a transfer pattern for controlling the amount of exposure light transmitted through the transfer pattern to form two or more on the photoresist film on the transfer target body a photoresist pattern having different values' The manufacturing method includes: a quasi-pick step prepared on the transparent substrate; ν a photomask having at least a semi-transmissive film and a light-shielding film: an L patterning step, respectively, by photolithography The semi-transmissive film is reinforced by the above-mentioned light-shielding material pattern, by (4) forming a transfer pattern including/and a semi-transmissive portion; and a correction step for correcting the light transmission; a defect generated in the transfer pattern; The falling portion of the light-transmissive film on the upper side of the film is removed or removed; in the repairing step, a correction film is formed on the removed portion of the semi-transmissive film or the light-shielding film I45498.doc 201111903 The phase difference between the light transmitting portion and the correction portion with respect to the wavelength light from the x-ray (wavelength 365 nm) to the g-ray (wavelength 436 nm) is 8 degrees or less. (Configuration 10) The manufacturing method of the multi-modulation reticle of the ninth aspect, wherein the normal portion and the correction portion are further provided with respect to the entire wavelength region from the x-ray (wavelength 365 nm) to the g-ray (wavelength 436 nm) The phase difference of the wavelength light is 8 degrees or less. (Configuration 11) A method of manufacturing a multi-tone mask, comprising: forming a light-shielding portion by patterning at least a semi-transmissive film and a light-shielding film formed on a transparent substrate, respectively a transfer pattern of the light transmissive portion and the semi-transmissive portion controls the amount of exposure light transmitted through the transfer pattern, thereby forming two or more different photoresists on the photoresist film on the transfer target a photoresist pattern of a residual film value, the manufacturing method comprising: preparing a step of preparing a photomask substrate having at least a semi-transmissive film and a light shielding film on the transparent substrate; and a patterning step of respectively using the photolithography method The light-transmissive film is patterned with the light-shielding film to form a transfer pattern including a light-shielding portion, a light-transmitting portion, and a semi-transmissive portion; and a correction step of correcting defects generated in the formed transfer pattern; In the above-mentioned correction step, a correction film is formed on the falling portion of the semi-transmissive film or the removed light-transmissive film or the removed portion of the light-shielding film, and the correction portion is formed, and the normal portion and the transparent portion are made The phase difference between the light portion, the normal portion, the correction portion, the loading light portion, and the correction portion with respect to the i-ray (wavelength 365 11 line (the wavelength of the entire wavelength region of the wavelength center is 8 〇) The method for manufacturing a multi-tone mask according to any one of the items 9 to 11, wherein a material containing a compound of the compound is used as the above-mentioned semi- & The method of manufacturing the multi-mode mask according to any one of the items 9 to 12, wherein the correction film is formed by a laser CVD method. (Configuration 14) In the method of manufacturing a cover, the correction film is formed by a laser CVD method using a raw material containing molybdenum and a raw material containing ruthenium. Next, the effect of the present invention will be described. On the boundary, the reduction of the material caused by the phase difference can be suppressed, and (4) the photoresist pattern obtained on the (4) (4) of the photomask becomes a desired good shape. Of course, when manufacturing the TFT liquid crystal display device, it can also be suppressed. Short channel section The resulting malfunction is inconvenient, and the defect generated by the semi-transmissive portion can be appropriately corrected. Further, the defect caused by using the semi-transmissive portion as described above is appropriately corrected. Township-style material transfer (four) ± into (four) Suppression of TFT_LCd and other electronic components in the production of peaks and eves of the wrong, this one of the ECG components f produced bad, which can achieve better yield and stable component production. [Embodiment] Hereinafter, some embodiments of the present invention will be described with reference to the drawings. Fig. 1 is a cross-sectional view showing a pattern transition using a multi-tone mask; a method of section 145498.doc -12-201111903. The multi-mode mask 10 shown is for manufacturing an electronic component such as a thin film transistor (TFT) of a liquid crystal display device (LCD), and is formed on the transfer target 20 shown in FIG. The film thickness is a retardation pattern 23 having a different phase or continuity. Further, in Fig. 1, reference numerals 22A and 22b denote a film β laminated on the substrate 21 on the substrate 20, and the multi-tone mask 10 has a semi-transparent light in addition to the light shielding portion and the light transmitting portion. An example of the third-order mask of the third embodiment includes a light-shielding portion 11 that shields exposure light (a transmittance of approximately 〇%) when the photomask 1 is used; and the transparent substrate 14 The light-transmitting portion 12 penetrated by the exposure light after the surface exposure; and the transmittance is reduced to 20% to 80%, preferably 2% by weight when the light transmittance of the light-transmitting portion is 1%% A semi-transmissive portion 13 of about 6% or so. The light-shielding portion 11 is formed by sequentially providing a semi-transmissive semi-transmissive film 16 and a light-shielding light-shielding film 15 on a transparent substrate 14 such as a glass substrate. Further, the semi-transmissive portion 13 is formed by forming the semi-transmissive film 16 on the transparent substrate 14, and the transmittance of the exposure light (e.g., i-ray to g-ray) is set lower than that of the light-transmitting portion 12. Examples of the semi-transmissive film 16 include a chromium compound, a molybdenum telluride compound, Si, W, and A1. Among them, among the chromium compounds, there are chromium oxide, chromium nitride (CrNx), chromium oxynitride (Cr〇xN), chromium fluoride (CrF〇, and carbon and hydrogen contained therein). As the compound, in addition to M〇Six, a nitride, an oxide, an oxynitride, a carbide, or the like of MoSi may be used. The semi-transmissive film 16 is particularly preferably composed of a film material containing a molybdenum molybdenum compound. There is etching selectivity between the chrome-based material and the chrome-based material which is advantageous for the light-shielding film. In the following manufacturing method, the other film is resistant to the etching medium which etches one of the films, 145498. Doc •13· 201111903 In addition, 'semi-transmissive film can also be an extremely excellent material for etching. As the above-mentioned light-shielding film 15', it is possible to embody Cr, Si, W, A1, etc. The material of the comparative component is more preferably a layer having an oxidation of Cr = :rcr-based compound on the surface as an anti-reflection layer, thereby improving the accuracy of the sound when the transfer pattern is drawn and suppressing when the mask is used. Useless reflection stray light It is preferable to separately test and laminate with a light-transmissive film to have a light-shielding property of an optical density of 3.0 or more. When the above-described multi-tone mask 10 is used, the light-shielding portion 11 does not substantially penetrate the light-transmitting portion 12 to expose the exposure light. Therefore, the exposure light is reduced in the semi-transmissive portion 13t. Therefore, the photoresist film (positive photoresist film) formed on the transferred (four) is formed after the transfer and is formed by the photoresist pattern (4), which corresponds to the shading The film thickness of the portion of the portion is increased, and the film thickness corresponding to the portion of the semi-transmissive portion 13 is reduced, and a residual film is not substantially generated corresponding to the portion of the light-transmitting portion 12 (see FIG. 丨). In the case of 23, the effect of thinning the film thickness corresponding to the portion of the semi-transmissive portion 13 is referred to herein as a gray-scale effect. Further, when a negative-type photoresist is used, it is necessary to consider the corresponding to the light-shielding portion and the light-transmitting portion. In the case where the thickness of the photoresist film is reversed, the effect of the present invention can be sufficiently obtained. Further, the portion of the photoresist pattern 23 shown in Fig. 1 which is not film-formed on the object to be transferred 20 For example, the first etching is performed on the films 22A and 22, and the thinner portion of the film in the photoresist pattern 23 is removed by ashing or the like. In this portion, a second etching is performed on, for example, the film 22 on the transfer target 20. Thus, the i-sheet multi-mode mask 10 (3rd order mask) is used to perform the steps of the previous two masks. Therefore, the number of masks is reduced. 145498.doc •14·201111903 The multi-tone mask ίο includes a light-shielding portion formed by patterning at least a semi-transmissive film and a light-shielding film formed on the transparent substrate, respectively. a transfer pattern of the light transmissive portion and the semi-transmissive portion, the amount of exposure light transmitted through the transfer pattern is controlled, whereby two or more different photoresists are formed on the photoresist film on the transfer target In the multi-mode mask 10, the light-shielding portion is formed by forming at least the light-shielding film on the transparent substrate, and the light-transmitting portion exposes the transparent substrate to form the semi-transparent light. The unit includes: a normal portion formed of a semi-transmissive film formed on the transparent substrate; and a correction portion formed of a correction film formed on the transparent substrate. Further, the light transmitting portion and the correction portion are opposed to each other. From i-rays ( Length 365 nm) to g rays (wavelength 436 nm) of the wavelength difference Cho entire wavelength region of light was set to 80 degrees or less. According to the manufacturing method of the multi-mode mask, the order of the semi-transmissive film and the light-shielding film on the transparent substrate may be any of the above. The method of manufacturing the multi-mode mask will be described in detail below. In addition to the above-described third-order mask having a semi-transmissive portion in addition to the light-transmitting portion and the light-shielding portion as shown in FIG. 1, and for the four semi-transmissive portions having different exposure light transmittances, A step mask or a mask having an order of 4 or more 'The present invention can also be suitably implemented. The multi-mode mask 10 is suitably applied to a TFT manufacturer, and the light shielding portion includes a portion corresponding to a source and a j: and a pole of the TFT, and the semi-transmissive portion includes a portion corresponding to the channel. Figure 3 is a plan view of a multi-tone mask r c having a typical TFT pattern as a transfer pattern. The same reference numerals are attached to the same portions as those in Fig. 1. The present invention achieves remarkable effects on a photomask having a pattern of 145498.doc •15·201111903 as shown. For example, as shown in the cross-sectional view of Fig. 1, the multi-mode mask preferably includes a light transmitting portion and light. The portion in which the semi-transmissive portion, the light-shielding portion, and the light-transmitting portion are arranged in order or the pattern as shown in FIG. 3 preferably includes a light-transmitting portion in one direction (for example, a direction of a broken line in FIG. 3(A)), A portion in which the light shielding portion, the semi-transmissive portion, the light shielding portion semi-transmissive portion, the light shielding portion, and the light transmitting portion are arranged in order. In either of FIGS. 1 and 3, the light shielding portion, the semi-transmissive portion, the light shielding portion and the light transmission portion, and the one semi-transmissive portion and the light-transmitting portion respectively have adjacent portions. . The exposure light transmittance of the semi-transmissive portion is determined by the thickness of the semi-transmissive film and the film thickness. Further, the phase of the exposure light of the semi-transmissive portion is referred to herein as the phase shift of the phase of the light penetrating the transparent substrate, and is also determined by the film material and the film thickness. Therefore, for a multi-mode mask, depending on the application and the manufacturing margin of the component (for example, TFT_LCD) manufactured by the device, it is possible to determine what kind of material is required for the semi-transmissive portion. . In the decision process towel, both the penetration rate and the phase difference must be considered. Even if the transmittance of the film alone is considered, the semi-transmissive portion formed by the semi-transmissive film and other portions (the translucent portion and the semi-transmissive portion corrected by the correction film (ie, the correction portion) are not considered. The adjacent portion is caused by: phase difference and interference, so that the actual amount of transmitted light is locally reduced, and the desired delicate pattern transfer cannot be performed. In fact, if the phase difference between the adjacent portions is larger than a specific range, the transmitted light on both sides will abut against the adjacent portion to generate a dark line. Here, in the transfer pattern shown in Fig. 3(A), a portion corresponding to the channel portion formed by the semi-transmissive film "a substantially U-shaped pattern" is produced with black 145498.doc • 16 · 201111903 Defects or white defects. For example, the black defect is the case where the remaining light-shielding film remains on the semi-transmissive film, and the defect is formed on the positive photoresist used to generate pinholes and is generated on the semi-transparent film. In the case of shedding, etc. For the case of black defects, lasers can be applied to the portion where the black defects are generated, or the FIB&, the radiation is removed by the energy, and the correction film is reformed after the removal. For example, regarding the black defect generated in the channel portion, the semi-transmissive film of the entire channel portion may be removed, and the correction film 30 (see FIG. 3(Β)) β may be formed in the entire channel portion, or if the channel portion is If the black defect produced is smaller, then only the black defect portion can be removed, and the correction film 3〇 can be formed in accordance with the opening of the removed portion (see FIG. 3(c)). The same is true, the entire channel containing the white missing part can be removed. a semi-transmissive film, and a correction film is formed in the entire channel portion or a semi-transmissive film of a portion of the white defect and a peripheral portion of the white defect can be removed and a correction film is formed on the shape-finished portion in accordance with the shape thereof. .
於上述圖3(B)之情形時，形成修正膜3〇並已進行修正之 部分(修正部)與透光部12鄰接。由於任-者均可使光穿透， 故當穿透兩者之光之相位有較大差異時，穿透光彼此於該 部分會相互抵消，具有如圖3⑻中之粗線31所示之暗線而 I揮作用因此’右使用該種光罩來對被轉印體上之光阻 膜進行曝光，則於該部分會產生對光阻膜之曝光量不足， 從而產生未料到的光P且圖案形狀不良。例如，於之通道 P中亦會產生上述暗線之部分使源極與沒極短路之不良。 因此，於此，必需使用修正部與透光部之間之相位差小K 145498.doc 201111903 於特疋值的修正膜。此處之相位差係指相對於使該光罩曝 先時所用之曝光光波長的相位差’例如係指相對於i射線〜呂 射線之波長光者mg射線之區域内之任—波長中， 相位差均在特定範圍内為宜。具體而言，肖由因相位差而 形成之已降低的穿透光量所產生之暗線部之最小的穿透率 不小於正常部之半透光部即可。此時，半透光部之圖案之 大小若比透光部側之設計值大出暗線部之線寬量則為等 價’但最終的TFT之動作不良等不適宜係在不會產生的範圍 内。上述相位差為80度以下’更佳者為7〇度以下。如此一 來，使用修正部與Μ部之間的相對於丨射線〜g射線之波長 光之相位差為80度以下的修正膜33來進行修正，即可抑制 修正部與透光部之鄰接部上之暗線部實質上發揮遮光部之 功能的不良情形（參照圖3(D))。 此外’如上述®3(C)所*，當針對在半透光部之一部分 上所產生之缺陷而局部地形成修正膜日寺，半《光部之修正 部與半透光部之正常部相鄰接。於此，當兩者之穿透:光 的相位差過大時’兩者之穿透光會相互抵消而引起穿透光 量局部地下降，並且若如圖3(c)中之粗線32所示之暗線部 在該。p为實質上作為遮光部而發揮作用則會產生與上述 相同之不良。 因此，宜以如下方式進行修正膜與半透光膜之選擇，即， 對於修正部與正常部（正常之半透光部13)之間之相對於i射 線〜g射線之波長光的相位差，亦使其為8〇度以下，更佳者 為70度以下。如上所述，使用修正部與正f部之間之相對 145498.doc -18· 201111903 於1射線〜㈣線之波長光的相位差為8G度以下的修正㈣ 來進行修正，便可抑制在修正部與正常部之鄰接部、 暗線（參照圖3(E))。 因此，結果尤佳之經適當修正後之多調式光罩為如 述者。 即，-種多調式光罩，其包括藉由分別對形成於透明基 ，上之至少半透光膜與遮光膜進行圖案加工而形成有遮光 心透光部、及半透光部之轉印圖案，對經該轉印圖案而 穿透之曝光光量加以控制’藉以於被轉印體上之光阻膜上 形成2個以上之具有不同光阻殘膜值之光阻圖案，其特徵在 於：上述遮光部係於上述透明基板上形成至少上述遮光膜 而成，上述透光部係使上述透明基板露出而形成，上述半 透光部包括：由形成於上述透明基板上之半透光膜構成之 正常m形成於上述透明基板上之修正膜構成之修正 部，上述正常部與上述透光部、上述正常部與上述修正部、 上述透光部與上述修正部之相對於從丨射線（波長365 nm)至 g射線（波長436 nm)之整個波長區域之波長光的相位差均為 80度以下，更佳者為7〇度以下。 再者，根據所使用之膜素材與膜厚，存在相對於透明基 板而具有各種相位差之膜。例如，相對於透明基板而存在 於正側具有相位差之膜，另一方面，亦存在於負側具有相 位差之膜。因此，若在正側具有相位差之膜與在負側具有 相位差之膜相鄰接，則兩者之相位差大於其中任一膜相對 於透明基板之相位差。故而’於進行膜素材之選擇時，g I45498.doc •19· 201111903 必需留意相位差產生之方向。 於此，圖4中例示有半透光膜之材料與相對於其穿透率之 相位偏移量的關係》 縱軸不相對於透明基板之i射線之相位偏移量，橫軸為穿 透率。穿透率越低則膜厚越大。膜厚越大，則相位偏移量 亦越大。於此，例如，當使用]^0以膜作為半透光膜（正常部） 時’在穿透率為25%~80%之範圍内，相對於透明基板之相 位偏移量未滿+(正）20度。使用有該種]^〇5丨膜之半透光部在 與透明基板之相位差較小時為較佳者。 另一方面，於該MoSi半透光膜上產生有缺陷，藉由以FIB 並使用芘氣體所形成之碳膜來修正該部分。此時，如圖所 不，所形成之修正膜相對於穿透率之相位偏移量較大地變 動，例如，當穿透率為30%時，相對於透明基板之相位差 超出80度。根據本發明者之研究發現，當為該相位差時， 在與透光部之邊界及與正常部之邊界上容易產生暗線，於 圖3(B)之修正方法中，或者根據穿透率而在圖3(B)與（C)之 任‘正方法中，均會成為容易產生上述不良之遮罩圖案。 料，關於使用雷射CVD法所形成之&修正膜之相位偏 移量如目4所tf ’較上述FIB碳膜而言，相位偏移量在正 側更大’於使用圖3⑻之修正方法時，或者於使用圖3⑻ 及（C)中之任-修正方法時’成為容易產生上述不良 圖案。 因此’若使用圖4所示之M〇s#之膜進行修正，則於至少 20%〜8〇%之穿透率範_，相對於透光部之相位差為⑽度 145498.doc •20· 201111903 以下，從而在修正部與透光部之邊界上不會產生暗線。故 而，於使用該光罩在光阻膜上曝光而形成光阻圖案時，可 形成良好之形狀之光阻圖案。總之，修正膜包括含有鉬與 妙之材料為宜。 進而，可使用M〇Si膜作為半透光膜（正常部），因此在將 MoSi系臈用於修正膜時，在正常部與修正部之邊界上相位 差亦為70度以下（實際上為2〇度以下），因而即便進行如上述 圖3(C)之局部之修正，正常部與修正部之間之相位差亦不 會成為問題。 進而，如上所述，使用已將於半透光部所產生之缺陷進 仃適當修正後之多調式光罩而於上述圖丨所示之被轉印體 上進行圖案轉印，藉此可抑制丁1?_1_1^(：〇等之電子元件所產 生之不良’從而可實現較高之良率與穩定之元件生產性。 其次，對多調式光罩之製造方法予以說明。In the case of the above Fig. 3(B), the portion (correction portion) where the correction film 3 is formed and corrected is adjacent to the light transmitting portion 12. Since any one can make the light penetrate, when the phase of the light that penetrates the two has a large difference, the transmitted light cancels each other in the portion, and has a thick line 31 as shown in FIG. 3(8). The dark line and the I wave act so that the right side of the photomask is used to expose the photoresist film on the transfer target, and the exposure amount to the photoresist film is insufficient in this portion, thereby generating the unexpected light P. And the shape of the pattern is poor. For example, in the channel P, a part of the dark line is also generated to cause a short circuit between the source and the immersion. Therefore, in this case, it is necessary to use a correction film having a small phase difference between the correction portion and the light-transmitting portion and having a small value of K 145498.doc 201111903. Here, the phase difference means that the phase difference of the wavelength of the exposure light used when exposing the mask is, for example, any wavelength in the region of the mg ray relative to the wavelength of the light of the i-ray to the ray. The phase difference is preferably within a specific range. Specifically, the minimum transmittance of the dark line portion due to the reduced amount of transmitted light formed by the phase difference is not smaller than the semi-transmissive portion of the normal portion. In this case, the size of the pattern of the semi-transmissive portion is equivalent to the line width of the dark portion at the design value of the light-transmitting portion side, but the final TFT operation failure is not suitable for the range that does not occur. Inside. The phase difference is 80 degrees or less, and more preferably 7 degrees or less. In this manner, the correction film 33 having a phase difference of 80 degrees or less with respect to the wavelength of the ray-ray to g-ray between the correction portion and the dam portion is corrected, and the adjacent portion between the correction portion and the light-transmitting portion can be suppressed. The upper dark line portion substantially functions as a light blocking portion (see FIG. 3(D)). In addition, as described in the above paragraph (3), the correction film is formed locally for the defect generated in one of the semi-transmissive portions, and the normal portion of the correction portion and the semi-transmissive portion of the light portion is half. Adjacent. Here, when the penetration of the two: the phase difference of the light is too large, the transmitted light of the two will cancel each other and cause the amount of transmitted light to locally drop, and if thick as shown by the thick line 32 in FIG. 3(c) The dark line is here. When p acts as a light-shielding portion substantially, the same defects as described above occur. Therefore, it is preferable to select the correction film and the semi-transmissive film in such a manner that the phase difference between the correction portion and the normal portion (the normal semi-transmissive portion 13) with respect to the wavelength of the i-ray to g-ray light It is also made below 8 degrees, and more preferably below 70 degrees. As described above, it is possible to suppress the correction by using the correction (4) in which the phase difference between the correction light and the positive f portion is 145498.doc -18·201111903 and the phase difference of the wavelength light of the 1st to the (4)th lines is 8G or less. The adjacent part of the part and the normal part, and the dark line (refer FIG. 3 (E)). Therefore, the multi-tone mask which is particularly well-corrected as a result is as described above. That is, a multi-tone mask includes a transfer of a light-shielding transparent portion and a semi-transmissive portion by patterning at least a semi-transmissive film and a light-shielding film formed on the transparent substrate. a pattern for controlling the amount of exposure light transmitted through the transfer pattern by means of forming two or more photoresist patterns having different photoresist residual film values on the photoresist film on the transfer target, wherein: The light shielding portion is formed by forming at least the light shielding film on the transparent substrate, wherein the light transmitting portion is formed by exposing the transparent substrate, and the semi-transmissive portion comprises: a semi-transparent film formed on the transparent substrate. Normally m is a correction portion formed of a correction film formed on the transparent substrate, and the normal portion and the light transmitting portion, the normal portion, the correction portion, the light transmitting portion, and the correction portion are opposite to each other from a x-ray (wavelength) The phase difference of the wavelength light in the entire wavelength region from 365 nm) to the g-ray (wavelength 436 nm) is 80 degrees or less, and more preferably 7 degrees or less. Further, depending on the film material and film thickness to be used, there are films having various retardation with respect to the transparent substrate. For example, there is a film having a phase difference on the positive side with respect to the transparent substrate, and a film having a phase difference on the negative side. Therefore, if the film having the phase difference on the positive side is adjacent to the film having the phase difference on the negative side, the phase difference between the two is larger than the phase difference of any of the films with respect to the transparent substrate. Therefore, when selecting the material for the film, g I45498.doc •19· 201111903 It is necessary to pay attention to the direction in which the phase difference is generated. Here, FIG. 4 exemplifies the relationship between the material of the semi-transmissive film and the phase shift amount with respect to the transmittance thereof. The vertical axis does not have a phase shift amount with respect to the i-ray of the transparent substrate, and the horizontal axis is the penetration. rate. The lower the penetration rate, the larger the film thickness. The larger the film thickness, the larger the phase shift amount. Here, for example, when the film is used as a semi-transmissive film (normal portion), the phase shift amount with respect to the transparent substrate is less than + in the range of the transmittance of 25% to 80%. Positive) 20 degrees. It is preferable that the semi-transmissive portion having such a film has a small phase difference with the transparent substrate. On the other hand, a defect is generated in the MoSi semi-transmissive film, and the portion is corrected by a carbon film formed by using FIB and a helium gas. At this time, as shown in the figure, the phase shift amount of the formed correction film with respect to the transmittance is largely changed. For example, when the transmittance is 30%, the phase difference with respect to the transparent substrate exceeds 80 degrees. According to the study by the inventors, it is found that when the phase difference is obtained, dark lines are easily generated at the boundary with the light transmitting portion and at the boundary with the normal portion, in the correction method of FIG. 3(B), or according to the transmittance. In any of the positive methods of FIGS. 3(B) and (C), the mask pattern which is likely to cause the above-described defects is formed. Regarding the phase shift amount of the & correction film formed by the laser CVD method, the phase shift amount is larger on the positive side than the FIB carbon film described above, and the correction is performed using FIG. 3 (8). In the case of the method, or when using any of the correction methods in FIGS. 3(8) and (C), the above-described defective pattern is likely to occur. Therefore, if the film of M〇s# shown in Fig. 4 is used for correction, the transmittance of at least 20% to 8〇% is _, and the phase difference with respect to the light transmitting portion is (10) degrees 145498.doc •20 · 201111903 In the following, no dark lines are generated on the boundary between the correction unit and the light transmission unit. Therefore, when the photomask is exposed on the photoresist film to form a photoresist pattern, a photoresist pattern having a good shape can be formed. In short, the correction film includes a material containing molybdenum and a wonderful material. Further, since the M〇Si film can be used as the semi-transmissive film (normal portion), when the MoSi system is used for the correction film, the phase difference between the normal portion and the correction portion is also 70 degrees or less (actually Since the temperature is less than or equal to 2, the phase difference between the normal portion and the correction portion does not become a problem even if the correction is partially performed as shown in Fig. 3(C). Further, as described above, pattern transfer is performed on the transfer target shown in the above-mentioned figure by using a multi-mode mask which has been appropriately corrected by the defects generated in the semi-transmissive portion, thereby suppressing Ding 1?_1_1^(: defects caused by electronic components such as ') can achieve higher yield and stable component productivity. Secondly, the manufacturing method of multi-mode reticle will be explained.
作為製造對象之多調式光罩包括藉由分別㈣成於透明 基板上之至少半透光膜與遮光膜進行圖案加工而形成有遮 光部、透光部、及半透光部之轉印圖案，對經該轉印圖案 而穿透之曝光光量加以控制’藉以於被轉印體上之光阻膜 上形成2個以上之具有不同綠殘膜值的纽圖案。該多調 式光罩之製造方法包括：準備步驟’準備於上述透明基板 上形成有至少半透光膜與遮光膜之光罩基底；圖案化步 驟，利用光微影法分別對上述半透光膜與上述遮光膜進行 圖案加工’藉以形成包括遮光部、透光部、及半透光部之 轉印圖t ;及修正步驟，修正所形成之上述轉印圖案中產[S 145498.doc -21 - 201111903 生之缺陷。於上述修正步驟中，在上述半透光膜之脫落部、 或者已去除上述半透光膜或上述遮光膜之去除部上形成修 正膜而成為修正部。再者，使上述透光部與上述修正部之 相對於從1射線（波長3 65 nm)至g射線（波長436 nm)之整個波 長區域之波長光的相位差為8〇度以下。 圖2係表示多調式光罩之製造步驟之一例的剖面圖。 所使用之光罩基底1中，於透明基板14上依序形成有例如 包含MoSi之材料之半透光膜16與遮光膜15。再者，遮光膜 15為例如以Cr為主成分之遮光層i5a與包含q之氧化物等 之防反射層15b的積層構成（參照圖2(a))。 首先’於该光罩基底1上塗佈光阻而形成光阻膜17 (參照 圖2(b))。作為上述光阻，使用正型光阻。 然後，進行第1次描繪。描繪中使用雷射光。對光阻膜i 7 也繪特疋之元件圖案（例如在與遮光部對應之區域上形成 有光阻圖案之類的圖案），並於描繪後進行顯影，藉此形成 與遮光部之區域對應之光阻圖案17a(參照圖2(c)) » 其次，將上述光阻圖案17a作為遮罩，使用公知的蝕刻法 對已曝光之透光部及半透光部區域上之遮光膜〖^進行蝕刻 (參照圖2(d))。於此，作為蝕刻，使用濕式蝕刻。再者， MoSi半透光膜相對於心系遮光膜之蝕刻而具有耐性。此 處，殘存之光阻圖案被去除（參照圖2(e))。 接下來，於基板整個面上形成與上述相同之光阻膜，進 行第2次描繪。於第2次描繪中，描繪在至少半透光部區域 上形成有光阻圖案（圖中在遮光部及半透光部區域上形成 145498.doc •22· 201111903 有光阻圖案）之類的特定圖荦。；/ p 系於彳田繪後進行顯影，藉此在 與至少半透光部對應之區域 L瑪上形成先阻圖案〗8a(參照圖 2(f))。 。其次’將上述光阻圖案18a作為遮罩，對已曝光之透光部 區域上之半透光膜16進行钮刻，使透明基板Μ曝光而形成 透光部（參照圖2(g))。然後，去除殘存之光阻圖案，藉此， 製造出於透明基板14上形成有轉印圖案之多調式光罩⑽ 遮罩）1G(參照圖2(h))，該轉印圖案包括：包含半透光膜16 與遮光膜15之積層膜的遮光部u、透明基板14曝光之透光 部12、及包含半透光膜16之半透光部13 ^ 又，亦可藉由以下之製造方法來製造多調式光罩。 (1)準備於透明基板上依序積層有半透光膜及遮光膜之光罩 基底，於該光罩基底上形成與遮光部及半透光部對應之區 域之光阻圖案，將該光阻圖案作為遮罩，對已曝光之遮光 膜及半透光膜進行蝕刻，由此形成透光部。其次，於至少 包含遮光部之區域上形成光阻圖案，將該光阻圖案作為遮 罩，對已曝光之遮光膜進行蝕刻，由此形成半透光部及遮 光。卩。藉此，可獲得於透明基板上形成有包含半透光膜之 半透光包&半透光膜與遮光膜之積層膜之遮光部、及 透光部的多調式光罩。 (2)準備於透明基板上形成有遮光膜之光罩基底於該光罩 基底上形成與遮光部對應之區域之光阻圖案，將該光阻圖 案作為遮罩，對已曝光之遮光膜進行蝕刻，由此形成遮光 膜圖案。其次，去除光阻圖案’之後於基板之整個面上成[ 145498.doc -23- 201111903 膜半透光膜。然後，在與遮光部及半透光部對應之區域上 形成光阻圖案，將該光阻圖案作為遮罩，對已曝光之半透 光膜進行蝕刻，由此形成透光部及半透光部。藉此，可獲 得於透明基板上形成有包含半透光膜之半透光部、包含遮 光膜與半透光膜之積層膜之遮光部、及透光部的多調式光 罩。 (3)與上述（2)相同，於在透明基板上形成有遮光膜之光罩基 底上，形成與遮光部及透光部對應之區域之光阻圖案，將 该光阻圖案作為遮罩’對已曝光之遮錢進行㈣，由此 使與半透光部對應之區域之透明基板露出。其次，去除光 阻圖案，之後於基板之整個表面上成膜半透光膜，在與遮 光部及半透光部對應之區域上形成光阻圖帛，將該光阻圖 案作為遮罩’對已曝光之半透光膜（及半透光膜與遮光膜） 進行敍刻，藉此亦可形成透光部與遮光部、及半透光部。 於修正所形成之轉印圖案中產生之缺陷的修正步驟中， 在半透光膜之脫落部、或者已去除半透光膜或遮光膜之去 除部上形成修正膜而成為修正部。於修正膜之形成中，可 適當使用雷射CVD。例如在形成M〇Si系之修正膜時，於導 入有M。原料與㈣料之混合氣體環境中㈣㈣光束，從 而可形成MoSi成分膜。 ★作為M。原料，可使用六㈣痛。(c〇)6、六氣化舰。⑶ 4。又，作為砂料’可使用單石夕炫仙4、四氯化石夕SiCl4、 四甲基石夕院Si(CH3)4、六甲基二石夕烧（如請吻The multi-tone mask to be manufactured includes a transfer pattern in which a light-shielding portion, a light-transmitting portion, and a semi-transmissive portion are formed by patterning at least a semi-transmissive film and a light-shielding film formed on the transparent substrate, respectively. The amount of exposure light transmitted through the transfer pattern is controlled by the formation of two or more neon patterns having different green residual film values on the photoresist film on the transfer target. The manufacturing method of the multi-modular reticle includes: a preparation step of preparing a reticle substrate on which at least a semi-transmissive film and a light shielding film are formed on the transparent substrate; and a patterning step of respectively performing the semi-transparent film by photolithography Patterning with the light-shielding film to form a transfer pattern including a light-shielding portion, a light-transmitting portion, and a semi-transmissive portion; and a correction step for correcting the formation of the transfer pattern formed [S 145498.doc -21 - 201111903 Defects in life. In the above-described correction step, a correction film is formed on the detached portion of the semi-transmissive film or the removed portion of the semi-transmissive film or the light-shielding film, and the correction portion is formed. Further, the phase difference between the light transmitting portion and the correction portion with respect to the wavelength light from the 1 ray (wavelength 3 65 nm) to the g ray (wavelength 436 nm) is 8 degrees or less. Fig. 2 is a cross-sectional view showing an example of a manufacturing procedure of a multi-tone mask. In the photomask substrate 1 to be used, a semi-transmissive film 16 and a light-shielding film 15 made of, for example, a material containing MoSi are sequentially formed on the transparent substrate 14. Further, the light-shielding film 15 is formed of, for example, a light-shielding layer i5a mainly composed of Cr and an anti-reflection layer 15b containing an oxide of q (see Fig. 2(a)). First, a photoresist is applied onto the mask substrate 1 to form a photoresist film 17 (see Fig. 2(b)). As the above photoresist, a positive photoresist is used. Then, the first drawing is performed. Laser light is used in the depiction. The photoresist film i 7 is also characterized by a component pattern (for example, a pattern in which a photoresist pattern is formed on a region corresponding to the light shielding portion), and is developed after being drawn, thereby forming a region corresponding to the region of the light shielding portion. The photoresist pattern 17a (see FIG. 2(c)). Next, the photoresist pattern 17a is used as a mask, and the light-shielding film on the exposed light-transmitting portion and the semi-light-transmitting portion is formed by a known etching method. Etching is performed (refer to FIG. 2(d)). Here, as etching, wet etching is used. Further, the MoSi semi-transmissive film is resistant to etching of the core-based light-shielding film. Here, the remaining photoresist pattern is removed (refer to Fig. 2(e)). Next, a photoresist film similar to the above was formed on the entire surface of the substrate, and the second drawing was performed. In the second drawing, it is depicted that a photoresist pattern is formed on at least the semi-transmissive portion region (a photoresist pattern is formed on the light-shielding portion and the semi-light-transmitting portion region in the figure) (145498.doc • 22·201111903 has a photoresist pattern). Specific map. ; / p is developed after drawing in the field, thereby forming a pre-resistance pattern 8a in the region L corresponding to at least the semi-transmissive portion (see Fig. 2(f)). . Next, the photoresist pattern 18a is used as a mask, and the semi-transmissive film 16 on the exposed light-transmitting portion is tapped to expose the transparent substrate to form a light-transmitting portion (see Fig. 2(g)). Then, the remaining photoresist pattern is removed, whereby a multi-tone mask (10) mask 1G (see FIG. 2(h)) for forming a transfer pattern on the transparent substrate 14 is produced, and the transfer pattern includes: The light-shielding portion u of the laminated film of the semi-transmissive film 16 and the light-shielding film 15, the light-transmitting portion 12 exposed by the transparent substrate 14, and the semi-transmissive portion 13 including the semi-transmissive film 16 can also be manufactured by the following The method is to manufacture a multi-tone mask. (1) a photomask substrate in which a semi-transmissive film and a light-shielding film are sequentially laminated on a transparent substrate, and a photoresist pattern in a region corresponding to the light-shielding portion and the semi-transmissive portion is formed on the mask substrate, and the light is formed The resist pattern is used as a mask to etch the exposed light-shielding film and the semi-transmissive film, thereby forming a light-transmitting portion. Next, a photoresist pattern is formed on at least the region including the light-shielding portion, and the photoresist pattern is used as a mask to etch the exposed light-shielding film to form a semi-transmissive portion and light. Hey. Thereby, a multi-tone mask in which a light-shielding portion of a semi-transmissive package comprising a semi-transmissive film, a semi-transmissive film and a light-shielding film, and a light-transmitting portion are formed on the transparent substrate can be obtained. (2) preparing a mask substrate on which a light-shielding film is formed on a transparent substrate, and forming a photoresist pattern on a region corresponding to the light-shielding portion on the mask substrate, and using the photoresist pattern as a mask to perform the exposed light-shielding film Etching, thereby forming a light shielding film pattern. Next, after removing the photoresist pattern ', a film semi-transmissive film was formed on the entire surface of the substrate [145498.doc -23-201111903. Then, a photoresist pattern is formed on a region corresponding to the light shielding portion and the semi-light transmitting portion, and the exposed light pattern is used as a mask to etch the exposed semi-transmissive film, thereby forming a light transmitting portion and a semi-transparent light. unit. Thereby, a multi-tone mask in which a semi-transmissive portion including a semi-transmissive film, a light-shielding portion including a laminated film of the light-shielding film and the semi-transmissive film, and a light-transmitting portion are formed on the transparent substrate can be obtained. (3) In the same manner as in the above (2), a photoresist pattern is formed on a mask base on which a light-shielding film is formed on a transparent substrate, and a photoresist pattern is formed as a mask. The exposed money is subjected to (4), whereby the transparent substrate in the region corresponding to the semi-transmissive portion is exposed. Next, the photoresist pattern is removed, and then a semi-transmissive film is formed on the entire surface of the substrate, and a photoresist pattern is formed on a region corresponding to the light shielding portion and the semi-light transmitting portion, and the photoresist pattern is used as a mask. The exposed semi-transparent film (and the semi-transmissive film and the light-shielding film) are etched to form a light-transmitting portion, a light-shielding portion, and a semi-light-transmitting portion. In the correction step of correcting the defect generated in the formed transfer pattern, a correction film is formed on the detached portion of the semi-transmissive film or the removed portion of the semi-transmissive film or the light-shielding film to form a correction portion. In the formation of the correction film, laser CVD can be suitably used. For example, when a M〇Si-based correction film is formed, M is introduced. The (four) (iv) light beam in the mixed gas environment of the raw material and the (four) material can form a MoSi component film. ★ As M. Raw materials can use six (four) pain. (c〇) 6, six gasification ships. (3) 4. In addition, as the sand material, you can use the single stone Xixianxian 4, the tetrachloride shixi SiCl4, the tetramethyl stone Xi Si Si (CH3) 4, and the hexamethyl bismuth sizzling (such as please kiss
Si(CH3)3NSi(CH3)3 等。 145498-doc ·24· 201111903 最好疋將 MoSi 糸（MoSix、MoSiN、MoSiON、MoSiC 等） 之膜用於半透光膜（正常部），並對修正膜使用以雷射Gyp 法而成膜之 MoSi 系（MoSix、MoSiC、MoSiOC、M〇SiCl 等） 之膜此時，可使透光部與修正部、修正部與正常部、正 常部與透光部之相對於i射線〜g射線之波長光的相位差均 為70度以下，並且藉由進行膜厚與組成之選擇而可使該相 位差進一步變小（例如5〇度以下，更佳者為3〇度以下卜 於成膜時，選擇預先特定之Si原料與M〇原料，並預先掌 握成膜時之雷射之劑量（與膜厚之間具有關聯）與穿透率之 關係’根據其資料而成膜。 §如上所述，¥使用多調式光罩而於被轉印體上这 行圖案轉印時所用之曝錢例如為液晶顯示裝置製造用肩 時’一般會使用i射線〜g射線（365 nm〜436 nm)左右之波長區 域又，曝光機之分光特性於較多情形時對於各個裝置未 必固定，例如，即便具有於i射線〜g射線之整個波長區域之 曝光光，亦會存在1射線之強度最大之曝光機、g射線之強 度最大之曝光機等。因此，即便為預先以使例如i射線之穿 透率在半透光膜之正常部與修正部相等之方式而設定的光 罩’但若其係使用有穿透率波長相依性在正常部與修正部 不同之膜材料者’則在將其應用於g射線或h射線之強度較 大的曝光機時，亦未必顯干今·讲罢+ 』不該遮罩之正常部與修正部為相 寻之穿透率。因此，藉由兮说 形成於被轉印體上之轉 :成為正㊉部與修正部之光阻殘膜值不同 用該光聞案it純料之條件設 吏[: M5498.doc -25- 201111903 於此所„胃修正與正常部之2個半透光部之穿透率波長 相依性貫質上相等，係指由於各個半透光部中所使用之膜 構成而於i射線〜g射線之範圍内之穿透率波長相依性之變 化曲線大致平行。其包括例如在使i射線〜§射線之範圍内之 穿透率變化近似於直線時，該直線之斜率大致相等的情 况。於此，所謂直線之斜率大致相等，係指彼此之斜率之 差異為5%/100 nm以内，較佳者為2%/1〇〇 nm以内更佳者 為 1 %/100 nm。 此外，如圖5所示，根據本發明者之研究，由於在以雷射 CVD法所形成之修正膜中之^膜而使i射線〜g射線之波長 區域之穿透率變化較大。另一方面，將錢鍍成膜所形成之 MoSi半透光膜之不同膜厚的穿透率波長相依性表示於圖6 中。假设於该MoSi半透光膜上所產生之缺陷部分上以雷射 CVD法而形成有Cr之修正冑’則無法忽視由曝光機之分光 特性之不同所引起之穿透率的變動。 又，將由FIB所形成之碳膜之不同膜厚的穿透率之丨射線 〜g射線波長相依性表示於圖7中。由FIB所形成之碳膜之}射 線〜g射線之波長相依性與MoSi膜類似，i射線〜g射線之穿透 率差為6%以下，或者斜率為85%以下。然而，如上所述（圖 4)，由FIB所形成之碳膜與MoSi膜之正常部之相位差有相當 差異，故而難以適用於例如穿透率3〇%以下之半透光部。 另一方面，若使用MoSi系之材料作為修正臈並以雷射 CVD法而成膜，則可使與用於半透光部（正常部）之Μ〇^膜 之i射線〜g射線的相位差為70度以下，且亦可使丨射線〜g射線 145498.doc 201111903 之穿透率差為6%以下，而且對於穿透率波長相依性上亦可 為實質上相等之值，故而成為兩者實質上近似之光學特 性。因此，修正部可具有與正常部大致相同實效之半色調 特性，作為多調式光罩為有利。 再者，於上述多調式光罩之製造方法中，關於上述正常 部與上述修正部之相對於從i射線至g射線之整個波長區域 之波長光的相位差，宜為80度以下，較佳者為7〇度以下。 特別好的是，上述正常部與上述透光部、上述正常部與上 述修正部、上述透光部與上述修正部之相對於從i射線至g 射線之整個波長區域之波長光的相位差均為8〇度以下，更 佳者為70度以下。 【圖式簡單說明】 圖1係用於說明使用有多調式光罩之圖案轉印方法之剖 面圖。 圖2(a)〜(h)係表示多調式光罩之製造步驟之一例的剖面 圖。 圖3(A)〜(E)係具有典型的TFT圖案作為轉印圖案之多調 式光罩的平面圖。 圖4係表示半透光膜之材料及相對於其穿透率之相位偏 移量之關係的示圖。 圖5係表示以雷射CVD法所形成之Cr膜之穿透率之丨射線 〜g射線波長相依性的示圖。 圖6係表示MoSi半透光膜之穿透率之i射線〜g射線波長相 依性的示圖。 [ 145498.doc -27· 201111903 圖7係表示以FIB所形成之碳膜之穿透率之i射線〜g射線 波長相依性的示圖。 【主要元件符號說明】 1 光罩基底 10 多調式光罩 11 遮光部 12 透光部 13 半透光部 14 透明基板 15 遮光膜 15a 遮光層 15b 防反射層 16 半透光膜 17 光阻膜 17a、18a ' 23 光阻圖案 20 被轉印體 21 基板 22A ' 22B 膜 30 ' 33 修正膜 31、32 粗線 145498.doc •28·Si(CH3)3NSi(CH3)3 and the like. 145498-doc ·24· 201111903 It is best to use a film of MoSi 糸 (MoSix, MoSiN, MoSiON, MoSiC, etc.) for the semi-transparent film (normal part), and use a laser Gyp method for the correction film. In the case of a film of MoSi (MoSix, MoSiC, MoSiOC, M〇SiCl, etc.), the wavelength of the light-transmitting portion, the correction portion, the correction portion, the normal portion, the normal portion, and the light-transmitting portion with respect to the i-ray to the g-ray can be made. The phase difference of light is 70 degrees or less, and the phase difference can be further reduced by selecting the film thickness and composition (for example, 5 degrees or less, more preferably 3 degrees or less). Selecting a pre-specific Si material and M〇 material, and preliminarily grasping the relationship between the dose of the laser (associated with the film thickness) and the transmittance when forming the film, and forming a film according to the data. § As described above, ¥ When using a multi-tone mask and the pattern used for transfer of the pattern on the transfer target, for example, when the shoulder for manufacturing a liquid crystal display device is used, it generally uses i-rays to g-rays (365 nm to 436 nm). In the wavelength region, the spectral characteristics of the exposure machine are It is not necessarily fixed. For example, even if there is exposure light in the entire wavelength region of the i-ray to the g-ray, there is an exposure machine having the highest intensity of 1 ray, an exposure machine having the highest intensity of g-ray, and the like. A mask which is set such that the transmittance of the i-ray is equal to the normal portion of the semi-transmissive film and the correction portion. However, if a film having a transmittance wavelength dependence different from the normal portion and the correction portion is used, 'When it is applied to an exposure machine with a strong intensity of g-rays or h-rays, it does not necessarily appear to be dry today. 』The normal portion and the correction portion of the mask should not be found. Therefore, by the fact that the rotation formed on the object to be transferred is different from the value of the residual film of the positive ten and the correction portion, the condition of the pure material is set by the light [: M5498.doc -25- 201111903 Here, the stomach correction is equivalent to the wavelength dependence of the transmittance of the two semi-transmissive portions of the normal portion, which refers to the i-ray to g-ray due to the film constitution used in each semi-transmissive portion. The variation of the wavelength dependence of the transmittance within the range is substantially parallel. For example, when the transmittance change in the range of the i-ray to the § ray is approximated to a straight line, the slopes of the straight lines are substantially equal. Here, the slopes of the straight lines are substantially equal, and the difference between the slopes of the straight lines is 5 Within %/100 nm, preferably less than 2%/1 〇〇 nm is 1%/100 nm. Further, as shown in Fig. 5, according to the study of the present inventors, due to laser CVD The film in the correction film formed has a large change in the transmittance of the wavelength region of the i-ray to the g-ray. On the other hand, the thickness of the MoSi semi-transmissive film formed by depositing the film into a film is different. The transmittance wavelength dependence is shown in Figure 6. It is assumed that the correction of Cr is formed by the laser CVD method on the defect portion generated on the MoSi semi-transmissive film, and the variation in the transmittance due to the difference in the spectral characteristics of the exposure machine cannot be ignored. Further, the X-ray to g-ray wavelength dependence of the transmittance of the film thickness of the carbon film formed by the FIB is shown in Fig. 7. The wavelength dependence of the ray to g-ray of the carbon film formed by the FIB is similar to that of the MoSi film, and the difference in transmittance between the i-ray and the g-ray is 6% or less, or the slope is 85% or less. However, as described above (Fig. 4), the phase difference between the carbon film formed by the FIB and the normal portion of the MoSi film is quite different, so that it is difficult to apply to, for example, a semi-transmissive portion having a transmittance of 3% or less. On the other hand, if a MoSi-based material is used as the correction 臈 and the film is formed by the laser CVD method, the phase of the i-ray to the g-ray which is used for the semi-transmissive portion (normal portion) can be obtained. The difference is 70 degrees or less, and the transmittance difference of the ray ray ~g ray 145498.doc 201111903 may be 6% or less, and the wavelength dependence of the transmittance may be substantially equal, so that it becomes two The optical properties are substantially similar. Therefore, the correction portion can have substantially the same halftone characteristics as the normal portion, and is advantageous as a multi-tone mask. Furthermore, in the method of manufacturing the multi-tone mask, the phase difference between the normal portion and the correction portion with respect to the wavelength light from the i-ray to the g-ray is preferably 80 degrees or less. The number is below 7 degrees. Particularly preferably, a phase difference between the normal portion and the light transmitting portion, the normal portion, the correction portion, the light transmitting portion, and the correction portion with respect to wavelength light from the entire wavelength region from the i-ray to the g-ray is It is 8 degrees or less, and more preferably 70 degrees or less. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view for explaining a pattern transfer method using a multi-tone mask. 2(a) to 2(h) are cross-sectional views showing an example of a manufacturing procedure of a multi-mode mask. 3(A) to (E) are plan views of a multi-modulus reticle having a typical TFT pattern as a transfer pattern. Fig. 4 is a graph showing the relationship between the material of the semi-transmissive film and the amount of phase shift with respect to the transmittance. Fig. 5 is a view showing the dependence of the ray-to-g-ray wavelength dependence of the transmittance of the Cr film formed by the laser CVD method. Fig. 6 is a graph showing the dependence of the transmittance of the MoSi semi-transmissive film on the wavelength of i-ray to g-ray. [145498.doc -27· 201111903 Fig. 7 is a view showing the dependence of the wavelength of the i-ray to g-ray of the transmittance of the carbon film formed by FIB. [Main component symbol description] 1 Photomask substrate 10 Multi-mode mask 11 Light-shielding portion 12 Light-transmitting portion 13 Semi-transmissive portion 14 Transparent substrate 15 Light-shielding film 15a Light-shielding layer 15b Anti-reflection layer 16 Semi-transmissive film 17 Photo-resist film 17a 18a ' 23 photoresist pattern 20 transfer body 21 substrate 22A ' 22B film 30 ' 33 correction film 31, 32 thick line 145498.doc • 28·