TW200924047A - Manufacturing method of semiconductor chip having adhesive film, adhesive film for semiconductor used for the manufacturing method and manufacturing method of semiconductor device - Google Patents

Manufacturing method of semiconductor chip having adhesive film, adhesive film for semiconductor used for the manufacturing method and manufacturing method of semiconductor device Download PDF

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Publication number
TW200924047A
TW200924047A TW097138934A TW97138934A TW200924047A TW 200924047 A TW200924047 A TW 200924047A TW 097138934 A TW097138934 A TW 097138934A TW 97138934 A TW97138934 A TW 97138934A TW 200924047 A TW200924047 A TW 200924047A
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Taiwan
Prior art keywords
semiconductor
adhesive film
semiconductor wafer
wafer
film
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TW097138934A
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English (en)
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TWI473152B (zh
Inventor
Keiichi Hatakeyama
Yuuki Nakamura
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Hitachi Chemical Co Ltd
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Publication of TW200924047A publication Critical patent/TW200924047A/zh
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Publication of TWI473152B publication Critical patent/TWI473152B/zh

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    • H01L21/67005—Apparatus not specifically provided for elsewhere
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    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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Description

200924047 九、發明說明： 【發明所屬之技術領城】 本發明是關於一種附黏著犋（mm)之 (chip)的製造方法、用於該製造方法的午導體晶片 以及半導體裝置的製造方法。 、蛉體用黏著犋、 【先前技術】 先前’半導體晶片與半導體晶片 合主要是使用銀漿（silverpaste)。然^撐構件的接 的小型化及高性能化以及所使用支;丛隨著半導體晶片 化，使用銀製的方法明顯存在以下，:小型化及細密 =於半導體晶片的傾斜所造成的打線接合f生水料'出或 二巧常、難以控制黏著劑層的 :) 4 (職1) #。另外，在對小=生黎者劑層的 =可攜式裝置等領域，正在開 ^讀化要求較高 =導體晶;^铸體 ^仙部積層有多個 $問題特別容易明顯化。因*:在$此種半導體裝置時上 使用半導：黏著膜)來代替銀漿。 分離點附方式：二者膜來製造半導體裝置的方法有:⑴ (size)，將所獲得的求半上體用黏著膜切成任意的尺寸 晶片搭载用支^:佚黏著膜貼附於附配線的基材等半導體 熱壓接合於其上；以或者半導體晶片上，再將半導體晶片 將半導體用黏著膜及（2)晶圓（wafer)背面貼附方式， 轉刀片將其分離，、雈=於半導體晶圓的背面，然後利用旋 又传附黏著膜之半導體晶片，再將此附 200924047 黏著膜之半導體晶片熱壓接合於半導體晶片搭载用支 件或者半導體晶片上。近年來，為了謀求半導體二、皮 步驟的簡化，上述⑵之晶圓背面貼附方式成為了主= 晶圓背面貼附方式中，如上所述，通常是 二l =對貼附有半導體用黏著膜的半導體晶圓進行切斷。: y若藉由使麟轉刀片的#通_ (didng)方_ ==導體晶圓與黏著膜，則存在以下問題：切斷後白门勺 V -晶片側面上會產生裂缝（crack)(晶片裂縫）去 ，切斷截面上黏著膜會起毛刺而產生許多毛邊（b ^ 3晶片裂缝或毛邊存在，則在拾取（pickup : 片時半導體晶片易發生破壞。特別是，不索 曰曰 的半導體晶圓分離的半導體晶片而進行拾化 因此’近年來提出有以下方法:將形成於半導=圓 ^用於劃分的界道(street)進行切削 ；0 =對晶圓的背面進行研磨直至此切割溝為止導 圓分割成各個半導體晶片（例如，參昭 千¥體曰曰 = 2)。而且，在藉由此種先切割方 = 置尺寸與半導體晶“同的黏著 半導體晶片）、半導體用黏著膜以 ^肢曰曰函（多個 咖）的積層體，再利用延伸（exp_) H膠帶（diChlg 膠帶進行雜，藉此料導體畔著 m㈣割保護 (b)準備藉由先切割方式分割過的==個 c 200924047 半導體晶片）·與半導體用黏著膜的積層體，再利用雷射切 ^機（laser dicer)沿著晶圓表面的界道（切割過的線）對 半導體用黏著膜進行切斷的方法。 專利文獻1 :日本專利特開2〇〇2_016〇21號公報 專利文獻2 ·日本專利特開2002-367933號公報 【發明内容】 μ壯ΐ疋、上述（a)的方法存在以下問題：必需另外的延 ^ 3E且在將半導體用轉膜進行分贿發生膜自晶 或1等突出。另外’上述㈤的方法因必需 r ί曲二切批置，並且必須進行旨在應對界道發生偏 =曲錄移（eurve shift))時的每條線的辨認操作，因 日守間高效率地將半導體用黏著膜切斷。如此，即 了的製造中_先切割方式的情況下，為 與讓，亦必須對黏著膜的分割作進 本發明是鑒於上述情況而完成的， 種附黏著狀半導體“的f 、:㈣在於— 之半導體晶片的製造方法料導體用黏=於此附黏著膜 組裝性與可靠性的半導體裝置的製造^、二及可巧 體晶片的製造方法可高良率地由”體： ί且可獲得貼附有毛邊非常少且形二ΐϊ體 曰曰片大致相同的黏著膜的附黏著膜之 /、+ V體 為了解決上述課題，本發明的著 的製造方法包括下列频：準 導體晶片 ㈣貝層體的步驟，此積層體 200924047 是至少積層有包含多個半導體晶片的分割過的半導體晶 =、料體用黏著膜、及切割保護膠帶而成，此分割過的 土導體晶=、藉由以下方式獲得，在半導體晶圓的一面 八二本ί:?晶圓的厚度的深度形成將半導體晶圓劃 刀成夕斜的切人溝，並對半導體 面進行研磨直至切入溝為止，此半導體用黏 = =:m〜15祕圍的厚度且具有小於5%的拉 =衣伸長¥ ’此拉伸斷裂伸長率小於最 :的腦，·以及將多個半導體晶片分別朝著 將半導體用黏著膜加以分割而獲得附黏 者朕之丰導體晶片的步驟。 根據本發明的附黏著膜之半導體晶片的夢造方法，將 ==特定的半導體用黏著臈加:組合，並利 膜°葬此可:所獲得的剪切力來分割半導體用黏著 可容半導體晶圓獲得半導體晶片，並且 相同的黏ί::付有毛邊非常少且形狀與半導體晶片大致 门的j者膜的難麵之半導體晶片。 著膜厚度小於一，則難以製作黏 由拾取半導體膜的厚度超過15㈣，則難以藉 體用1¾著膜*刀副半導體用黏著膜。另外，若半導 割保護膠Ά私伸斷裂伸長率大於等於5%，則必須將切 伸斷裂伸:率相大於等於通常的拉伸量’若拉 —'取大負荷時的伸長率的比例大於等於 、 邊抑制毛邊的產生一邊將半導體用黏著膜 200924047 完m因此不易獲得符合半導體晶片的形狀的黏箸膜。 本發明的附=明的半導體裝置的製造方法包括：將藉由 著膜之半導體::之:導體;片的製造方法所峨 片搭載用支；：:上:::其他半導體晶片或者半導體晶 根據本發明的半導體裝置的製造方法 明的附黏著膜之本连蝴a μ 便用稭由本發 之半導體3 曰片的製造方法所獲得的附黏著膜 Κ體曰4 ’而可謀求兼具組裝性與可靠性。
體曰2發明提供—種用於本發明的附黏著臈之半導 體晶片的製造方法的半 百肤心千V 具有1 /zm〜一體用站者艇，此半導體用黏著膜 15 /zm乾圍的厚度且具有 裂伸長率，此拉伸斷裂伸 、。、拉伸fe/f ll〇〇/o〇 辦斷衣伸長率小於最大負荷時的伸長率的 [發明效果] 1根據本發明，可提供一種附黏著膜之半導體 k方法、適用於此附黏著獏之半導體 日日片的製 導體用黏著膜、以及可兼且_ :衣造方法的半 的製造方法，上述附黏!膜可靠性的半導體裝置 良率地由半導體晶圓獲得半導體晶片 ：方法可局 毛邊非常少且形狀與半導體晶片，^又钎貼附有 著膜之半導體晶片。 月大致相冋的黏著膜的附黏 為讓本發明之上述和其他目的、 易懂，下文特舉較佳實施例，並配合所點能更明顯 明如下。 厅附圖式，作詳細說 10 200924047 【實施方式】 以下，就本發明的較佳實施形態加以詳細說明。 圖1、2、3、4及5是用以說明本發明的附黏著 ，方法的較佳-實施形態的示意截面圖。本 貫把形悲的附黏著臈之半導體晶片的製造 =在半導體晶圓1的—個面（電路形成面）上;is 半導體晶圓的厚度且大於碁炊hJ 士r A ' a π*ι v^. ^ 〜元成纣厚度的深度m,形成 體曰曰ϋ劃分成多個半導體 =:);r導體晶圓的未形成切入溝的另-= 得:有多二導二最終完成時厚度為止，藉此獲 驟唯成—曰曰片的刀副過的半導體晶圓7的第2步 ΐ導^用為著膜Γ序Γ分割過的半導體晶圓7、本發明的 半割保護膠帶3加以積層而成的積 + ^曰_ 7 W，在將切割保護膠帶3朝著分 半導體晶片相互分離的方向拉 Ο 體的積層方向拾取，藉此分宝^曰曰片％分別朝著積層 黏著膜之半導體晶片30的第H體用黏著膜8而獲得附 驟而權m AA „ * + 卑4步驟（圖5 )。經由這也步 驟而獲付_輯膜之轉體晶片3g， = 形狀與半導邮7咖__著^毛邊非〇且 半導體晶圓1可使用由星a 、. 圓，此外亦可使用由多晶石夕、^ slllc〇n)所構成的晶 ^ ( 1r 日日 各種陶竟（ceramic)、石申化 化合物半導體等所構成的晶圓。 L ，如圖1所示，將半導體晶圓1積 200924047 c 層於切割保護膠帶3上’利用切割刀片（dicing blade ) 4 自半導體晶圓的表面（電路面）側進行半切（half cut)成 深度大於目標半導體晶片的最終完成時厚度，藉此形成切 入溝2〗。在本實施形態中，較好的是D1比最終完成時厚 度大5 //m〜50 //m，更好的是大10 〜30 //m。 -在上述第2步驟中，如圖2所示，將背面研磨膠帶6 貼附於第1步驟中所獲得的半導體晶圓1的形成有切入溝 21的面上，再利用背面研磨裝置的背面研磨輪（backgrind (' wheel) 5對半導體晶圓的未形成切入溝的面進行薄化（背 面研磨）直至半導體晶圓達到預定的厚度（最終完成時厚 度）D2，藉此製作含有多個半導體晶片的分割過的半導體 晶圓7。 背面研磨裝置例如可使用Disco股份有限公司製造的 全自動研磨機（Full Automatic Grinder) DFG8540 等。 背面研磨膠帶6可使用聚對苯二甲酸乙二醇 (polyethylene terephthalate )系膝帶等。 〇 上述第3步驟是以如下方法來準備積層體20 :依序將 半導體用黏著膜8及切割保護膠帶3貼附於分割過的半導 體晶圓7的背面（與背面研磨膠帶6側相反的面）上，或 者以半導體用黏著膜8位於分割過的半導體晶圓7側的方 式’將#貝層有半導體用黏著膜8及切割保護膠帶3的複合 片（sheet)貼附於分割過的半導體晶圓7的背面。σ 圖3中表示將背面研磨膠帶6積層於分割過的 晶圓7上的狀態，但在下一舟妒 4 b 、 r /驟之刖將月面研磨膠帶6剝 12 200924047 離另外，圖3所不的積層體 作為固定用環恤g)的晶圓環^刀以呆上具有 性，具f可固定的程度的黏著 使分割過的半導體晶圓(延伸)’而 =的間隔’則可無特別限制具有 膠帶。商業上可_切:：:=用「=護 等一」(以上是電氣化學工業公㈣t::」)、 伸的===’利用吸附圓頂(d—n對經延 將進行=;===真空吸附，利用上推針 拾取杏通r 所具有的部位進行上推，並利用 12朝著積層體的積層方向（圖 用1::和的方向)拾取半導體晶片7a。此時，對半導Ξ 力’以半導體晶US 導體=獲得_有毛邊非常少且形狀與半 3〇。 目同的黏著膜如的附黏著膜之半導體晶片 式4開發用於薄厚度晶片的方式。 13 c 200924047 間等間隔地配置。特別是在採用多芯上推方式時，若過多 地配置針，則會減小來自切割保護膠帶下側的吸附效 因此若為10 mmxio mm左右的尺寸，則較好的 右的配置。 根工 另外，拾取半導體晶片的拾取夾頭12，較好的是將其 设為與晶片尺寸大致相同的尺寸。將針上推時的條件以最 大上推尚度計，較好的是小於等於2000 ，更好的是 小於等於700 ，尤其好的是小於等於6〇〇以卬，特= 〇 好的是小於等於#m。若上推高度超過2〇〇〇以加， 則擔心會破壞晶片，因而欠佳。 曰將針上推的速度較好的是2〇 mm/s〜2〇〇 mm/s，更好 的是30 mm/s〜150 mm/s，尤其好的是5〇 mm/s〜1〇〇 mm/s ·。若速度小於2〇 mm/s ’貝有在上推時難以分創黏晶 膜（die bonding film )的傾向，因而欠佳。 在本實施形態中，可分成大於等於2個階段進行上 推例如，在上推尚度250 〜1〇〇〇 、上推速度 〇 〜100 mm/s的條件下進行第1階段的上推，在上 推间度1000 〜2000 、上推速度imm/s〜30mm/s 的條件下進行第2階段的上推。 ⑽關於切割保護膠帶3的延伸，將延伸環9自切割保護 『的下側向上方（圖4中箭頭A的方向）上推，藉此 ^ =副保4膠帶3朝著分割過的半導體晶圓（多個半導體 曰曰片）7相互分離的方向（圖4中箭頭B的方向）拉伸。 可利用黏晶機（die bonder)裝置來延伸切割保護膠帶3。 c 200924047 至於切割保護膠帶3的延伸量，在初始的切割保護膠 τ 3的隶大i度為2〇〇 mm〜300 mm範圍的情況下，以拉 伸後的切割保護膠帶3的寬度（最大寬度）與初始的切割 保護膠帶3的寬度（最大寬度）之差計，較好的是〗mm 〜20 mm ’更好的是2 mm〜15 mm，尤其好的是3 mm〜 10 mm ° 本實施形態中的切割保護膠帶3的延伸量，可小於先
，的半導體用黏著膜藉由延伸而切斷時的延伸量。因此， 無須追加另外的延伸裝置。 “ 一、,π-呢⑺+银、明的将定的半導體用 ^者，而在上述拾取步驟中自半導體職著膜分 邊非常少且形狀與半導體晶片大致相同的黏著膜％。 以下’就本發明的半導體用黏著膜加以 本發明的半導體__具有丨_ 的厚度且具有小於抓的拉伸斷裂伸長率:關 長率小於最大負荷時的伸長率1〇 表伸 著膜=2硬^翻1及㉝熱塑倾細=導體用黏 著膜右若=二小於1 _，則難以製作黏 :=ί導體晶片來分割半導二:::外則;： = 長率大於等於心必St 更胗咿的拉伸夏增大至大於等於 二= 伸”相^最大負荷時的伸;=心 ，°表不降伏狀態較長或者易發生頸縮 15 c 200924047 (necking )，此時’難以一邊抑制毛邊的產生一邊將半導 體用黏著膜完全分割，因此不易獲得符合半導體晶片的形 狀的黏著膜。 就與上述同樣的觀點而言，拉伸斷裂伸長率較好的是 小於4°/。’更好的是小於3 5%。同樣，拉伸斷裂伸長率相 對於最大負荷時的伸長率的比率，較好的是小於108%， 更好的是小於105%。另外，在拉伸斷裂伸長率與最大負 荷時的伸長率一致時，此比率為最低値即1〇〇〇/〇。 最大應力、最大負荷伸長率以及拉伸斷裂伸長率是藉 由以下方式而求得：使用自B-階段（stage)狀態的半導體 用黏著膜切出的具有寬度5 mm、長度50 mm以及厚度25 m的尺寸的帶狀試驗片，於25°c環境下、在以下條件下進 行拉伸試驗。 拉伸試驗機：SIMADZU製造100N AUTOGRAPH 「AGS-100NH」 夾盤（chuck)間距離（試驗開始時）：30 mm (j 拉伸速度：5 mm/min 根據藉由拉伸試驗而獲得的應力一應變曲線，讀取最 大負荷、最大負荷時的夾盤間長度以及斷裂時的夾盤間長 度’利用這些値及試樣截面積的實測値，根據下述式算出 最大應力、最大負荷伸長率以及拉伸斷裂伸長率。 最大應力（Pa)=最大負荷（N) /試樣的截面積（m2) 最大負荷時的伸長率（％)二丨（最大負荷時的夾盤間 長度（mm)〜30) /3〇}χ1〇〇 16 200924047 c —3二=長率(%)=={(斷裂時的夹盤間長度(― 此半= :並記錄其平均値作為 好的是在上述條件下進試:再= 可提供相同試驗結果的其他條/彳-打文更為貝質上 而言二觀點 更好的是5 _〜15 〜15 半導體用黏著膜8較好的是 化性成分以及填料(叫由 膜8，藉由調整各成分的麵及調配量，可 1 特定的拉伸特性的半導體用黏著膜8 ^成=好 的是熱塑性樹脂。 ㈣ ϋ 構成半導體_著_高分子量成分較好的是具有小 ;專於60C的玻璃（galss)轉移溫度（Tg)。3外，較好 =具有大於特·Τ：的耐熱性的高分子量成分。適宜 的0子量成分具體例可舉出：魏亞胺（pQiyimide)樹 ，、聚醯胺醯亞胺（p〇lyamide_imide)樹脂、苯氧（沖） 樹脂、丙稀酸系樹脂（acrylieresin)、聚酸胺（㈣譏说） 樹脂以及胺基曱酸酯（urethane)樹脂。這此高八旦 可使用!種或者將多種組合使用。這些二= 聚醯亞胺樹脂。藉由使用聚醯亞胺樹脂，可一邊將填料的 含量維持在-^程度的較小值，—邊容易地對半導體用黏 17 200924047 著膜8賦予如上所述的拉伸特性。
、， -----“〜OUlL'r生積f月旨， 亚…um定’其巾就作為半導體周邊材料的方便性（容 易獲得高純度品、品種多、易控制反應性）的方面而言， 熱=性Ϊ分是藉由加熱發生交聯而可形成硬化物的 以及1分子中具有至少2個熱硬化性 合物。環氧樹脂通常與環氧樹脂硬化 較好的是環氧樹脂、以及 酿亞胺基的醯亞胺化合物 劑併用。 環氧樹脂較好的是具有大於等於2個環氧基的化合 物。就硬化性或硬化物特性的方面而言，較好的是苯酚 (phenol)的縮水甘油醚（glycidylether)型環氧樹脂。苯 酚的縮水甘油醚型環氧樹脂例如可舉出：雙酚（bisphen〇1) A、雙紛AD、雙紛S、雙紛F或者鹵（halogen)化雙酉分A 與表氯醇（epichlorohydrin )的縮合物、苯盼紛酸清漆 (phenol novolac )樹脂的縮水甘油醚、甲紛紛搭清漆 (cresolnovolac)樹脂的縮水甘油醚、以及雙酚a酚醛清 漆樹脂的縮水甘油醚。就硬化物的交聯密度高，且可提高 膜加熱時的黏著強度的方面而言，這些之中，較好的是紛 駿清漆型環氧樹脂（甲酚酚醛清漆樹脂的縮水甘油醚以及 笨酚酚醛清漆樹脂的縮水甘油醚等）。這些環氧樹脂可單獨 使用或者將大於等於二種加以組合而使用。 環氧樹脂硬化劑例如可舉出：酚系化合物、脂肪族胺 (amine)、脂環族胺、芳香族聚胺（p〇iyamine)、聚醯胺、 18 200924047 c 脂肪族酸酐、脂環族酸酐、芳香族酸酐、雙氛胺 (dicyandiamide)、有機酸二醯肼（dih}/drazide)、三氟化 獨胺錯合物、咪。坐（imidazole)類、以及三級胺。這些之 中，較好的是酚系化合物，其中特別好的是具有大於等於
2個酚性羥基的酚系化合物。更具體而言，較好的是萘酚 酚醛清漆樹脂（naphtholnovolac resin)以及三苯紛紛輕清 漆樹脂（trisphenolnovolacresin)。若使用這些紛系化合物 作為環氧樹脂硬化劑’則可有效減少用以封裝（) 組裝的加熱時的晶片表面及裝置的污染、或成為臭氣原因 的逸氣（out gas )的發生。 藉由調整填料的含量，可控制半導體用黏著膜的拉伸 特性。若增加填料的含量，則存在拉伸斷裂伸長率變小的 傾向、以及拉伸斷裂伸長率相對於最大負荷時的伸長率的 比率變小的傾向。另外，藉由使用適量的填料，亦可獲得 提高操作性、提高導熱性、調整熔融黏度、賦予觸變 (thixotropic)性等效果。 就貝現上述目的之觀點而& ’填料較好的是無機填 料。更具體而言’較好的是含有選自由氫氧化鋁、氫氧化 鎂、碳酸詞、碳酸鎂、梦酸i弓、砍酸鎂、氧化舞、氧化鎮、 氧化鋁、氮化鋁、硼酸鋁晶鬚（aluminum borate whisker)、 氮化硼、結晶性二氧化矽（silica)、非晶性二氧化石夕以及 銻氧化物所組成族群中的至少1種無機材料的無機填料。 為了提高導熱性，這些之中較好的是氧化紹、氮化銘、^ 化硼、結晶性二氧化矽、以及非晶性二氧化矽。為了調整 19 200924047 ，=度_讀變性，較好的是氫氧她、氫氧 ，、碳酸鎂、石夕_、石夕酸鎂、氧導氧 了二=二獅、以及非晶性二鮮^ 了“耐濕性，較好的是氧化紹、二氧切、氫氧 以及銻氧化物。亦可將多種填料混合使用。 、’ 率微；填!!=量增加，則拉伸斷裂伸長率變小並且彈性 ΐ二:Γ斷裂強度上升的傾向，另-方面，由於黏 Ϊ的=在抗回焊龜裂性（refl°w咖k ）下 =傾向。特別是有在如有機基板的表 與半導體晶片間在回焊時易發生破壞的 (HA^i的t量增加’則亦有對高度加速壽命試驗 产 p “ 驗 ’ H_y Accelerated Stress Test)等高溫高濕 二㈣性試驗的耐性下降的傾向。若填料的含量進 上的、:二T存在可將半導體用黏著膜貼附於半導體晶圓 旦:度亦上升的傾向，於如上所述的情況，填料的含 30 ，好的疋小於25 wt%，尤其好的是小於H 著膜8乂I:疋可在小於等於赋的溫度下將半導體用黏 保持好於作為被黏附體的半導體晶圓上。在此，在將 時若度的半導體用黏著膜貼附於半導體晶圓上 (ped)強Λ體用/占著膜與半導體晶圓的界面上的剝離 膜8扯'大於專於2〇N/m，則觸可將半導體用黏著 t的、半導體晶圓上。例如，使用設定為小於等於川〇 的值度的加熱賴合機（hQiiOiUamin_)將半導體用 20 200924047 =膜貼附於半導體晶圓上。在抑的環境中， :m =5〇_/mm的條件下進行剝離強度的測 二料減小填料的含量或者使用具有較低Tg的 於半導“ f寻於⑽⑽溫度下獲得可貼附 貼=;==?::。半導體用黏_可 杜， _上1度’更好的是小於特95。(：，尤 二η小於等於9 〇 c。在考慮到背面研磨膠帶的耐埶性 的情況下，較好的是可在小於等於8G 導辦 用黏;ΐ二貼附r:為被黏附體的半導體晶圓上 於半導較好的是，具有將半導體晶片搭載 將勒著強产(pass)抗回焊龜裂性試驗。可 裂性。為，來評價半導體用黏著膜的抗回焊龜 的黏著面積二二的=;性广一見方 離強度在初始半導體晶圓上時，剝 的璟…署::等於U kg/Cm，在咖5% 妒剝“产更好广時後較好的是大於等於〇.5 kg/cm。初 :_強度更好的是大於等於u kg—，尤其好的是Μ 顯關離強度， kg/em。 . g/cm，尤其好的是大於等於0.8 半導體用黏著膜8益 有熱塑性樹脂等高分子以下方法而獲得：例如將含 將這此成分溶解卞\里成为、熱硬化性成分、填料以及 Μ分散的_溶_塗佈液塗佈於基材膜 200924047 上，再利用加熱將有機溶劑自基材膜上的塗佈液中除去。 有機溶劑若可將材料均勻地溶解或分散則無限定，例 如可舉出· 一曱基甲酿胺（dimethylformamide )、二曱基乙 月女、N-曱基。比略烧酮（methylpyrrolidone)、二曱亞石風 (dimethyl sulfoxide )、二乙二醇二甲醚（diethylene glyc〇1 dimethyl ether )、曱笨（t〇]uene )、苯（benzene )、二甲苯 (xylene)、甲基乙基酉同（methyi ethyi ketone)、四氫咬喃 (tetrahydrofuran)、乙基溶纖劑（ethyl ceU〇s〇lve)、乙基 洛纖劑乙酸酯、丁基溶纖劑、二氧陸圜（di〇xane)、環己 酮（Cyd〇hexanone)以及乙酸乙酯（ethyl此6加〇。這些 有機溶劑可^使用或者將大於等二種加歧合而使用。 —基材膜若可耐文用以除去有機溶劑的加熱則無特別限 定。基材膜的例子可舉出：聚酯膜㈣、聚丙 ^膜（_yPr〇Pylenefllm)、聚對苯二甲酸乙二酷膜、聚酸 聚轉酿亞胺膜、聚㈣二曱酸S旨（polyether naphthalate )膜、以及曱美七兵 、 可將*於笙T基戊烯（m ylpenten〇膜。亦 '、、'、種的這些膜加以組合而成的多層膜用作美 箄斜An #认虱（Slhcone)系、二氧化矽系等脫模劑 專對基材_表面進行處理 基材直接用作半導體用黏; 存及使護膠帶貼合而成的複合片的狀態下保 半導= 膜。藉由使用此種複合片’可簡化 ;本毛明的難著膜之半導體晶片的製造方法的半 Γ
Cj 200924047 導體給來料歸下述構成吨晶膜。 樹脂的㈣含錄魏㈣料域熱塑性 芬H 料具#純、㈣繼、及含有熱硬化性樹r 或…』性樹㈣崎劑層的黏晶膜。 ’曰 依序具備基材、含錢魏⑽脂及/或敎塑性 的黏接著劑層的黏晶膜。 勒曰膜由沾,匕）的黏晶膜中的黏著劑層、以A (c)的 "曰田‘接著麟，是上述本發明的半導體用黏著膜。 Γ太&)的黏晶膜日夺，可利用以下的任意方法來獲 付本發明的積層體。 & #曰先，將上述（a)的黏晶膜的黏著劑層與半導 广曰“目、5。接著’將黏晶膜的基材剝離。接著，將依 具，黏著劑層及基材的切割保護膠帶構件的黏接劑層、 與黏著劑層相貼合。 (2)首先，將上述（a)的黏晶膜的黏著劑層、與依 序具備黏著劑層及基材層的域健膠_件的黏接劑層 相貼5。接著，將黏晶膜的基材剝離，將黏著劑層與半導 體晶圓相貼合。 在使用（b)的黏晶膜時，可藉由以下方法來獲得本發 明的積層體。 (3)將上述（b)的黏晶膜的黏著劑層與半導體晶圓 2貼合。在基材以及黏著劑層發揮切割保護膠帶的功能 時，可藉此獲得積層體。另外，在將基材剝離後，可將切 23 200924047 割保護膠帶貼合於黏接劑層上而獲得積層體。 在使用（C)的黏晶膜時，可藉由以下方法來獲得本發 明的積層體。 (4 )首先’將上述（c )的黏晶膜的黏接著劑層與半 導體晶圓相貼合。在基材發揮切割保護膠帶的功能時，可 藉此獲付積層體。另外，在將基材剝離後，可將切割保護 膠帶貼合於黏接劑層上而獲得積層體。
C 另外，如使用上述（C)的黏晶膜的例子所示，本發明 可提供一種附黏著膜之半導體晶片的製造方法，其包括下 列步驟：準備積層體的步驟，此制體是至少積層有包含 多個半導體晶片的分割過的半導體晶圓、膜狀黏接著劑、 ^基材而成，此分割過的半導體晶圓是藉由以下方式庐 :二ΐ半導體晶圓的—個面上，以小於半導體晶圓的厚ί 售冰Γ:成將半導體晶81劃分成多個半導體晶片的切入 ，止，並且上述二二r=直二 的拉伸斷裂伸長率，此拉伸斷 半^體f負荷時的伸長率的110%;以及將多個 膜積層體的積層方向拾取，藉此將上述 驟狀黏接者劑加以分割而獲得附 ^ 割一 於半===::導體膜配置 著膜之半導體晶麵造方法=== 200924047 的電路面與半導體用黏著膜加以貼附的方式。 如上所述，藉由本實施形態的方法所獲得的附黏著骐 之半導體晶片30，例如可構成如Ic (㈣㈣以如此，積 體電路）、LSI (large scale integration，大型積體電路）的 半導體元件。附黏著膜之半導體晶片30例如經由黏著膜 8a而黏著於其他半導體晶片或半導體晶片搭制支撐構 件上。 半導體晶片搭載用支撐構件例如可舉出：42合金導線 架（alloy 〗ead frame)以及銅導線架等導線架；由環氧樹 脂、聚酸亞胺系樹脂以及順丁稀二酿亞胺（maleimide)系 樹脂等所形成的樹賴；將環氧樹脂、聚gs亞㈣樹脂以 ^’丨員丁稀二醯亞㈣樹轉熱硬倾細旨含浸於玻璃不織 布或玻璃織布中再使其硬化而獲得的基板；以及玻璃基板 及氧化鋁等陶瓷基板。 ϋ 圖6是藉由此方法所獲得的半導體裝置的一實施形能 f截3 °圖6所示的半導體裝置100包括：附配線的i /Λ構件）13、經由黏著膜8a而黏著於附配線的基材 白'，導體晶片7a。半導體晶片7&藉由接線(b〇n—g wlre) 14而與附配線的基材13的配線相連接 導體==被埋設有上述構件的密封樹脂们5所密封。 的鮮片與支縣件的黏著以及半導體晶片彼此間 片i此η 如半導體晶片與支撐構件間或者半導體晶 ΐί Γ 半導體用黏著膜的狀態下，於咖c〜3〇〇 C下加熱0.1秒〜300秒來進行的。 200924047 在半導體用黏著膜8含有熱硬化性樹脂時，較 將黏著後的^導體晶片進行加熱以促進半導體用黏著膜2 被黏附體的密著或硬化，從而增加接合部的強度。此時的 加熱條件根據黏著膜的组成作適當調整即可，通常是勺 〜220°C、0.1分鐘〜60〇分鐘。在進行樹脂密封時， 利用密封樹脂的硬化步驟的加熱。 [實施例] 以下，藉由實施例來詳細說明本發明。但是，本發 1 並不限定於這些實施例。 Λ <半導體用黏著膜的製作> (實施例1) 向具備溫度計、攪拌機以及氯化鈣管的5〇〇ml四口燒 瓶中，加入作為二胺的1,3·雙(3_胺基丙基)四曱基二矽氧烷 (0.06111〇1)、4,9-二氧癸烧_1，12_二胺（〇.〇4111〇1)，以及作 為溶劑的150 g的N-曱基_2_吡咯烷酮，並於⑼它下進行攪 拌、溶解。 見 Ο 在二胺溶解後，各少量添加U〇-(十亞甲基)雙(偏笨三 曱酸酯二酐）（0.02 mol)及4,4<_氧二鄰苯二甲酸二酐（〇.& mol) ’並於6〇°C下反應3小時。隨後，一邊吹 N 邊於ncrc下加熱，利用共沸以3小時將反應系統内2的水 與一部分溶劑/同除去。藉此，獲得聚醯亞胺樹脂的溶液。 向上述所獲得的聚醯亞胺樹脂的N_曱基吡咯烷酮 (NMP)溶液（含有100重量份的聚醯亞胺樹脂）中，加 入4重量份的甲酚酚醛清漆型環氧（ep〇xy)樹脂（東都化 26 c 200924047 成製造）、2重量份的4,4’-[1-[4-Π-(4_經基笨基)-1-甲基乙 基]苯基]亞乙基]雙酚（本州化學製造）、〇.5重量份的四苯 基酸四苯基鱗（tetraPhenylphosphonium tetraphenylborate )(東京化成製造）。接者’相對於總固體 成分的重量，而加入I2 wt%的氮化填料（水島合金鐵製 造）’相對於總固體成分的重量，而加入3 wt%的Aerosil
Filler R972 (曰本Aerosil製造），進行充分混練’而獲得 清漆（varnish )。 二醋於剝離處理過的聚對苯二甲酸乙 厚度50 Mm)上，並二公司製造，·Α31， 下加熱30分鐘，而开下加熱30分鐘，接著於120 (實施例2) /战厚度5 /zm的半導體用黏著膜。 將以與實施例1同樣 理過的聚對苯二曱酸乙二 A3卜厚度50 ym)上， 於120°C下加熱3〇分鐘， 黏著膜。 的方式獲得的清漆塗佈於剝離處 _骐（帝人杜邦公司製造，Film 教於80。(：下加熱3〇分鐘，接著 而形成厚度15 //πι的半導體用 (比較例1 ) 的方式獲得的清漆塗佈於剝離處 酉曰膜（帝人杜邦公司製造，Film 並於80。(：下加熱3〇分鐘，接著 而形成厚度25 /im的半導體用 將以與實施例1同樣 理過的聚對苯二曱酸乙二 A31 ’ 厚度 5〇 vm)上， 於120°C下加熱3〇分鐘， 黏著膜。 27 200924047 (比較例2) 準備DF-402 (日立化成工業股份有限公司製造，商品 名，厚度15 #m)來作為比較例2的半導體用黏著膜。 <黏著膜的評價> (最大應力、最大負荷伸長率、以及拉伸斷裂伸長率） 使用自B-階段狀態的黏著膜切出的帶狀試驗片（寬度 5 mm，長度50 mm)進行拉伸試驗。根據所獲得的應力一 、 應變曲線，基於下述計算式而求得最大應力、最大負荷伸 長率、以及拉伸斷裂伸長率。拉伸試驗是使用拉伸試驗機 (SIMADZU 製造 100N AUTOGRAPH，AGS-100NH)，在 25 C的環境中，在試驗開始時的夾盤間距離3〇 mm、拉伸 速度5 mm/min的條件下進行。 最大應力（Pa)=最大負荷（N) /試樣的截面積（m2) 最大負荷伸長率（％)=[(最大負荷時的夾盤間長度 (mm) -30) /30]χ1〇〇 拉伸斷裂伸長率（％)=[(斷裂時的夾盤間長度（mm) y -30) /30]xl00 <附黏著膜之半導體晶片的製作> 藉由圖1及圖2所示的先切割方式，將5〇 ^ m厚的 半‘體晶圓（材質.早晶石夕）分割成厚度5〇 ym、尺寸 10 mmx 10 mm的半導體晶片。 另一方面’將實施例及比較例中所製作的半導體用黏 著膜分別剪切成直徑210 mm的圓形，利用晶圓貼片機 (wafer mounter )「DM-300H」（JCM 公司製造，商品 28 200924047 名）’在室溫、線壓5 kgf、l〇 mm/s的條件下，將所庐得 的各半導體用黏著膜貼合於切割保護膠帶（電氣化學^^ 公司製造，商品名「AD_8〇H」，厚度為80 //m)上，而製 作半導體用黏著膜與切割保護膠帶的積層品。另外，在$ 積層品的切割保護膠帶上亦貼附晶圓環。 利用晶圓貼片機「DM-300H」（JCM公司製造，商σ 名）’在熱板溫度80°C、線壓5 kgf、3 mm/s的條件下，將 上述半導體用黏著膜與切割保護膠帶的積層品貼附於實施
了上述先切割處理的分割過的半導體晶圓的背面上，而獲 得積層體試樣。 X 接著’將上述所獲得的積層體試樣設置於可撓性黏晶 機（flexible die bonder )「DB-730」（Renesas Eastern Japan
Semiconductor公司製造，商品名）上，利用延伸裝置將切 割保護膠帶延伸。延伸速度為10 mm/s，延伸量為4 mm。 接著’對經延伸的積層體試樣，藉由以42 mm間隔將9 根鎮鋼頂針（ejector needle) (Micromechanics 公司製造， SEN-83-05 :針徑為〇,7mm，頂端為350 徑的半圓形 狀）配置成格子狀的可撓性黏晶機「DB-730」（Renesas
Eastern Japan Semiconductor公司製造）的多芯上推夾具， 一邊將針上推，一邊利用作為拾取夾頭的橡皮吸嘴（rubber tip) (Micromechanics 公司製造，商品名：13-087E-33，10 mmxl〇 mm)拾取半導體晶片。此時，將針的上推分成2 階段來進行，第1階段是在高度3〇〇 、速度89.4 mm/s 的條件下進行上推，隨後，第2階段是在高度^00 ^瓜、 200924047 速度8.94 mm/s的條件下進行上推，上推後在保持時間（拾 取計時器）為500 ms的條件下，一邊將針上推一邊拾取半 導體晶片。基於下述標準來評價此時的拾取性。 [拾取性] A :可切斷半導體用黏著膜，可拾取附黏著膜之半導 體晶片。 B :無法完全切斷半導體用黏著膜，無法拾取半導體 晶片’發生晶片破壞。 [表1]
單位 實施例1 實施例2 比較例1 比較例2 拉伸特性 最大應力 MPa 45.9 45.9 45.9 60.0 最大負荷伸長率 % 2.5 2.5 2.5 3.9 拉伸斷裂伸長率 % 2.5 2.5 2.5 10.3 拉伸斷裂伸長率/ 最大負、荷伸長率 % 101 101 101 264 膜厚 //m 5 15 25 15 拾取性 — A A B B
如表1所示，可確認：根據具有1 //m〜15 //m範 圍的厚度且具有小於5%的拉伸斷裂伸長率、此拉伸斷裂 伸長率小於最大負荷時的伸長率的110%的實施例1及實 施例2的半導體用黏著膜，藉由上述拾取步驟可分割半導 體用黏著膜，並可獲得附黏著膜之半導體晶片。另外，可 確認：經分割的黏者膜的毛邊亦非常少’具有與半導體晶 片大致相同的形狀。相對於此，在使用比較例1及比較例 30 200924047
2的半導體用黏著膜的情況下，I 及拾=步轉半導體賴麵㈣。•歧伸步驟《 的二⑵=:=:=，著膜 千¥體日日片，並可謀求兼具採用先 /者嗅 凌置時的組裝性與可靠性。 式製化半導體 [產業上之可利用性] 1據本發明，可提供—種附黏 造方法、適用於此附黏著膜之半導體片的製 二及可兼具組裝性與可靠性的半導體G ^方去，上述附黏著膜之半導體晶片的擎 置 ，率地由半導體日㈣獲得半導體 哪貼^ 物常少且形狀與半導體晶片大致相 者膜之半導體晶片。 U者Μ的附黏
L 雖然本發明已以較佳實施例揭露如上，缺 和^ = 此技藝者’在不職本發明之^ 範圍'許之更動與潤飾’因此本發明之保護 圍#視後附之申請專利範圍所界定者 【圖式簡單說明】 圖1是用以說明實施形態的附黏著 製造方法的示意截面圖。 、之^體日日片的 圖2是用以說明實施形態的附黏著 製造方法的示意截面圖。 、之日日片的 200924047 圖3是用以說明實施形態的附黏著膜之半導體晶片的 製造方法的示意截面圖。 圖4是用以說明實施形態的附黏著膜之半導體晶片的 製造方法的示意截面圖。 圖5是用以說明實施形態的黏著膜之半導體晶片的製 造方法的不意截面圖。 圖6是表示半導體裝置的一實施形態的截面圖。 【主要元件符號說明】 1 :半導體晶圓 2 .晶圓壤 3:切割保護膠帶 4 :切割刀片 5、8 :半導體用黏著膜 6:背面研磨膠帶 7:分割過的半導體晶圓 7a :半導體晶片 8a :黏著膜 9 :延伸環 10 上推針 11 吸附圓頂 12 拾取夾頭 13 附配線的基材 14 接線 15 密封樹脂層 32 200924047 20 :積層體 21 :切入溝 30 :半導體晶片 100 :半導體裝置 A :向上方向 B:半導體晶圓相互分離的方向 C:積層體的積層方向 :最終完成時厚度的深度 E>2 :最終完成時厚度

Claims (1)

  1. 200924047 十、申請專利範圍·· [―種附黏著膜之半導體θ ，準備積層體的步驟，上述;層^造方法，包括： 個半導體晶片的分割過的半導體—疋至少積層有包含多 及切割保護膠帶而成，上述分割曰尚曰圓二半導體用黏著臈、 下方式獲得，在半導體晶圓的々半導體晶圓是藉由以 晶圓的厚度的深如Μ將上料 2小於上述半導體
    體晶片的切人溝，對上述半導體劃分成多個半導 的另-面進行研磨直至，上述切入溝 用黏著膜具有！ _叫 _，並且上述半導體 何日寸的伸長率的110% ;以及 人貞 向私Γ上述多個半導體晶片分別朝著上述積層體的積層方 =取，藉此將上述半導體用黏著膜加以分割 者膜之半導體晶片的步驟。 又f附黏
    ^-種半導體裝置的製造方法，其包括將藉由如 =1範圍第1項所述之製造方法而獲得的附黏著膜之半導 I晶片黏著於其他半導體晶片或者半導體晶片搭载用 構件上的步驟。 牙 #、..·種用於如申请專利範圍第1項戶斤述之附黏著膜之 ，導體晶片的製造方法，其具有1 /zm〜_範圍的 旱度且具有小於5%的拉伸斷裂伸長率，此拉伸斷裂伸長 率小於最大負荷時的伸長率的11〇%。 34
TW97138934A 2007-10-09 2008-10-09 附黏著膜之半導體晶片的製造方法、用於該製造方法的半導體用黏著膜、以及半導體裝置的製造方法 TWI473152B (zh)

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