TW200915545A - Semiconductor memory device and method of manufacturing the same - Google Patents

Semiconductor memory device and method of manufacturing the same Download PDF

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Publication number
TW200915545A
TW200915545A TW097128643A TW97128643A TW200915545A TW 200915545 A TW200915545 A TW 200915545A TW 097128643 A TW097128643 A TW 097128643A TW 97128643 A TW97128643 A TW 97128643A TW 200915545 A TW200915545 A TW 200915545A
Authority
TW
Taiwan
Prior art keywords
gate
insulating film
semiconductor substrate
thickness
film
Prior art date
Application number
TW097128643A
Other languages
English (en)
Chinese (zh)
Inventor
Tetsuya Ishimaru
Yoshiyuki Kawashima
Yasuhiro Shimamoto
Kan Yasui
Tsuyoshi Arigane
Toshiyuki Mine
Original Assignee
Renesas Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Tech Corp filed Critical Renesas Tech Corp
Publication of TW200915545A publication Critical patent/TW200915545A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
TW097128643A 2007-08-24 2008-07-29 Semiconductor memory device and method of manufacturing the same TW200915545A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007218498A JP2009054707A (ja) 2007-08-24 2007-08-24 半導体記憶装置およびその製造方法

Publications (1)

Publication Number Publication Date
TW200915545A true TW200915545A (en) 2009-04-01

Family

ID=40381356

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097128643A TW200915545A (en) 2007-08-24 2008-07-29 Semiconductor memory device and method of manufacturing the same

Country Status (5)

Country Link
US (1) US20090050956A1 (enExample)
JP (1) JP2009054707A (enExample)
KR (1) KR20090021074A (enExample)
CN (1) CN101373775A (enExample)
TW (1) TW200915545A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI555176B (zh) * 2011-10-28 2016-10-21 瑞薩電子股份有限公司 半導體裝置的製造方法及半導體裝置
TWI675451B (zh) * 2018-02-20 2019-10-21 日商東芝記憶體股份有限公司 記憶裝置

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JP5007017B2 (ja) * 2004-06-30 2012-08-22 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP4659527B2 (ja) * 2005-06-20 2011-03-30 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US8212309B2 (en) 2008-02-20 2012-07-03 Nec Corporation Non-volatile memory device and method of manufacturing same
US8712571B2 (en) * 2009-08-07 2014-04-29 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for wireless transmission of diagnostic information
JP5554973B2 (ja) 2009-12-01 2014-07-23 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
US7985649B1 (en) * 2010-01-07 2011-07-26 Freescale Semiconductor, Inc. Method of making a semiconductor structure useful in making a split gate non-volatile memory cell
JP5524632B2 (ja) 2010-01-18 2014-06-18 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP5779068B2 (ja) * 2011-10-03 2015-09-16 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP5985293B2 (ja) * 2011-10-04 2016-09-06 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
JP6081228B2 (ja) * 2013-02-28 2017-02-15 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US9331183B2 (en) * 2013-06-03 2016-05-03 United Microelectronics Corp. Semiconductor device and fabrication method thereof
JP2015015384A (ja) * 2013-07-05 2015-01-22 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US9048316B2 (en) * 2013-08-29 2015-06-02 Taiwan Semiconductor Manufacturing Co., Ltd. Flash memory structure and method of forming the same
JP6274826B2 (ja) 2013-11-14 2018-02-07 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US10192747B2 (en) 2014-01-07 2019-01-29 Cypress Semiconductor Corporation Multi-layer inter-gate dielectric structure and method of manufacturing thereof
US9484351B2 (en) 2014-02-18 2016-11-01 Taiwan Semiconductor Manufacturing Co., Ltd. Split gate memory device and method of fabricating the same
US9450057B2 (en) 2014-02-18 2016-09-20 Taiwan Semiconductor Manufacturing Co., Ltd. Split gate cells for embedded flash memory
JP2015185613A (ja) * 2014-03-20 2015-10-22 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US9397176B2 (en) * 2014-07-30 2016-07-19 Freescale Semiconductor, Inc. Method of forming split gate memory with improved reliability
JP5934324B2 (ja) 2014-10-15 2016-06-15 株式会社フローディア メモリセルおよび不揮発性半導体記憶装置
JP6557095B2 (ja) * 2015-08-26 2019-08-07 ルネサスエレクトロニクス株式会社 半導体装置
JP2017045947A (ja) 2015-08-28 2017-03-02 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
JP6266688B2 (ja) * 2016-04-25 2018-01-24 株式会社フローディア 不揮発性半導体記憶装置
US10074438B2 (en) * 2016-06-10 2018-09-11 Cypress Semiconductor Corporation Methods and devices for reducing program disturb in non-volatile memory cell arrays
JP2018046050A (ja) * 2016-09-12 2018-03-22 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US10504913B2 (en) * 2016-11-28 2019-12-10 Taiwan Semiconductor Manufacturing Co., Ltd. Method for manufacturing embedded non-volatile memory
US9997253B1 (en) 2016-12-08 2018-06-12 Cypress Semiconductor Corporation Non-volatile memory array with memory gate line and source line scrambling
JP6883422B2 (ja) * 2016-12-28 2021-06-09 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP6998267B2 (ja) * 2018-05-08 2022-01-18 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US10714536B2 (en) * 2018-10-23 2020-07-14 Taiwan Semiconductor Manufacturing Co., Ltd. Method to form memory cells separated by a void-free dielectric structure
CN114868242B (zh) * 2019-12-20 2024-11-12 株式会社索思未来 半导体存储装置
US11621271B2 (en) 2021-02-16 2023-04-04 United Microelectronics Corp. Silicon-oxide-nitride-oxide-silicon (SONOS) memory cell and forming method thereof
CN115985768A (zh) * 2022-11-29 2023-04-18 华虹半导体(无锡)有限公司 高功率器件的栅极结构及其制造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4746835B2 (ja) * 2003-10-20 2011-08-10 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
KR100650369B1 (ko) * 2004-10-01 2006-11-27 주식회사 하이닉스반도체 폴리실리콘부유측벽을 갖는 비휘발성메모리장치 및 그제조 방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI555176B (zh) * 2011-10-28 2016-10-21 瑞薩電子股份有限公司 半導體裝置的製造方法及半導體裝置
TWI675451B (zh) * 2018-02-20 2019-10-21 日商東芝記憶體股份有限公司 記憶裝置

Also Published As

Publication number Publication date
CN101373775A (zh) 2009-02-25
KR20090021074A (ko) 2009-02-27
US20090050956A1 (en) 2009-02-26
JP2009054707A (ja) 2009-03-12

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