KR20090021074A - 반도체 기억 장치 및 그 제조 방법 - Google Patents

반도체 기억 장치 및 그 제조 방법 Download PDF

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Publication number
KR20090021074A
KR20090021074A KR1020080076602A KR20080076602A KR20090021074A KR 20090021074 A KR20090021074 A KR 20090021074A KR 1020080076602 A KR1020080076602 A KR 1020080076602A KR 20080076602 A KR20080076602 A KR 20080076602A KR 20090021074 A KR20090021074 A KR 20090021074A
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KR
South Korea
Prior art keywords
gate electrode
insulating film
gate
semiconductor substrate
thickness
Prior art date
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Ceased
Application number
KR1020080076602A
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English (en)
Korean (ko)
Inventor
데쯔야 이시마루
요시유끼 가와시마
야스히로 시마모또
간 야스이
쯔요시 아리가네
도시유끼 미네
Original Assignee
가부시끼가이샤 르네사스 테크놀로지
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Application filed by 가부시끼가이샤 르네사스 테크놀로지 filed Critical 가부시끼가이샤 르네사스 테크놀로지
Publication of KR20090021074A publication Critical patent/KR20090021074A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors

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  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
KR1020080076602A 2007-08-24 2008-08-05 반도체 기억 장치 및 그 제조 방법 Ceased KR20090021074A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007218498A JP2009054707A (ja) 2007-08-24 2007-08-24 半導体記憶装置およびその製造方法
JPJP-P-2007-00218498 2007-08-24

Publications (1)

Publication Number Publication Date
KR20090021074A true KR20090021074A (ko) 2009-02-27

Family

ID=40381356

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080076602A Ceased KR20090021074A (ko) 2007-08-24 2008-08-05 반도체 기억 장치 및 그 제조 방법

Country Status (5)

Country Link
US (1) US20090050956A1 (enExample)
JP (1) JP2009054707A (enExample)
KR (1) KR20090021074A (enExample)
CN (1) CN101373775A (enExample)
TW (1) TW200915545A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130036735A (ko) * 2011-10-04 2013-04-12 르네사스 일렉트로닉스 가부시키가이샤 반도체 장치 및 반도체 장치의 제조 방법
KR20140108105A (ko) * 2013-02-28 2014-09-05 르네사스 일렉트로닉스 가부시키가이샤 반도체 장치 및 그 제조 방법

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JP5007017B2 (ja) * 2004-06-30 2012-08-22 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP4659527B2 (ja) * 2005-06-20 2011-03-30 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US8212309B2 (en) 2008-02-20 2012-07-03 Nec Corporation Non-volatile memory device and method of manufacturing same
US8712571B2 (en) * 2009-08-07 2014-04-29 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for wireless transmission of diagnostic information
JP5554973B2 (ja) 2009-12-01 2014-07-23 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
US7985649B1 (en) * 2010-01-07 2011-07-26 Freescale Semiconductor, Inc. Method of making a semiconductor structure useful in making a split gate non-volatile memory cell
JP5524632B2 (ja) 2010-01-18 2014-06-18 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP5779068B2 (ja) * 2011-10-03 2015-09-16 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP5847537B2 (ja) * 2011-10-28 2016-01-27 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
US9331183B2 (en) * 2013-06-03 2016-05-03 United Microelectronics Corp. Semiconductor device and fabrication method thereof
JP2015015384A (ja) * 2013-07-05 2015-01-22 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US9048316B2 (en) * 2013-08-29 2015-06-02 Taiwan Semiconductor Manufacturing Co., Ltd. Flash memory structure and method of forming the same
JP6274826B2 (ja) 2013-11-14 2018-02-07 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US10192747B2 (en) 2014-01-07 2019-01-29 Cypress Semiconductor Corporation Multi-layer inter-gate dielectric structure and method of manufacturing thereof
US9484351B2 (en) 2014-02-18 2016-11-01 Taiwan Semiconductor Manufacturing Co., Ltd. Split gate memory device and method of fabricating the same
US9450057B2 (en) 2014-02-18 2016-09-20 Taiwan Semiconductor Manufacturing Co., Ltd. Split gate cells for embedded flash memory
JP2015185613A (ja) * 2014-03-20 2015-10-22 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US9397176B2 (en) * 2014-07-30 2016-07-19 Freescale Semiconductor, Inc. Method of forming split gate memory with improved reliability
JP5934324B2 (ja) 2014-10-15 2016-06-15 株式会社フローディア メモリセルおよび不揮発性半導体記憶装置
JP6557095B2 (ja) * 2015-08-26 2019-08-07 ルネサスエレクトロニクス株式会社 半導体装置
JP2017045947A (ja) 2015-08-28 2017-03-02 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
JP6266688B2 (ja) * 2016-04-25 2018-01-24 株式会社フローディア 不揮発性半導体記憶装置
US10074438B2 (en) * 2016-06-10 2018-09-11 Cypress Semiconductor Corporation Methods and devices for reducing program disturb in non-volatile memory cell arrays
JP2018046050A (ja) * 2016-09-12 2018-03-22 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US10504913B2 (en) * 2016-11-28 2019-12-10 Taiwan Semiconductor Manufacturing Co., Ltd. Method for manufacturing embedded non-volatile memory
US9997253B1 (en) 2016-12-08 2018-06-12 Cypress Semiconductor Corporation Non-volatile memory array with memory gate line and source line scrambling
JP6883422B2 (ja) * 2016-12-28 2021-06-09 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP6976190B2 (ja) * 2018-02-20 2021-12-08 キオクシア株式会社 記憶装置
JP6998267B2 (ja) * 2018-05-08 2022-01-18 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US10714536B2 (en) * 2018-10-23 2020-07-14 Taiwan Semiconductor Manufacturing Co., Ltd. Method to form memory cells separated by a void-free dielectric structure
CN114868242B (zh) * 2019-12-20 2024-11-12 株式会社索思未来 半导体存储装置
US11621271B2 (en) 2021-02-16 2023-04-04 United Microelectronics Corp. Silicon-oxide-nitride-oxide-silicon (SONOS) memory cell and forming method thereof
CN115985768A (zh) * 2022-11-29 2023-04-18 华虹半导体(无锡)有限公司 高功率器件的栅极结构及其制造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4746835B2 (ja) * 2003-10-20 2011-08-10 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
KR100650369B1 (ko) * 2004-10-01 2006-11-27 주식회사 하이닉스반도체 폴리실리콘부유측벽을 갖는 비휘발성메모리장치 및 그제조 방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130036735A (ko) * 2011-10-04 2013-04-12 르네사스 일렉트로닉스 가부시키가이샤 반도체 장치 및 반도체 장치의 제조 방법
KR20140108105A (ko) * 2013-02-28 2014-09-05 르네사스 일렉트로닉스 가부시키가이샤 반도체 장치 및 그 제조 방법

Also Published As

Publication number Publication date
TW200915545A (en) 2009-04-01
CN101373775A (zh) 2009-02-25
US20090050956A1 (en) 2009-02-26
JP2009054707A (ja) 2009-03-12

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