TW200845090A - Improving plasma process uniformity across a wafer by apportioning power among plural VHF sources - Google Patents
Improving plasma process uniformity across a wafer by apportioning power among plural VHF sources Download PDFInfo
- Publication number
- TW200845090A TW200845090A TW097103568A TW97103568A TW200845090A TW 200845090 A TW200845090 A TW 200845090A TW 097103568 A TW097103568 A TW 097103568A TW 97103568 A TW97103568 A TW 97103568A TW 200845090 A TW200845090 A TW 200845090A
- Authority
- TW
- Taiwan
- Prior art keywords
- frequency
- power
- center
- vhf
- plasma
- Prior art date
Links
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- 230000008569 process Effects 0.000 title description 17
- 238000009826 distribution Methods 0.000 claims abstract description 116
- 238000012545 processing Methods 0.000 claims abstract description 19
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- 238000010168 coupling process Methods 0.000 claims abstract description 13
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- 230000001965 increasing effect Effects 0.000 claims description 16
- 230000007423 decrease Effects 0.000 claims description 10
- 238000006243 chemical reaction Methods 0.000 claims description 5
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- 150000002500 ions Chemical class 0.000 description 91
- 235000012431 wafers Nutrition 0.000 description 54
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- 230000000694 effects Effects 0.000 description 7
- 230000008859 change Effects 0.000 description 6
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- 238000005457 optimization Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US89863207P | 2007-01-30 | 2007-01-30 | |
| US11/733,764 US7879731B2 (en) | 2007-01-30 | 2007-04-11 | Improving plasma process uniformity across a wafer by apportioning power among plural VHF sources |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200845090A true TW200845090A (en) | 2008-11-16 |
Family
ID=39323943
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097103568A TW200845090A (en) | 2007-01-30 | 2008-01-30 | Improving plasma process uniformity across a wafer by apportioning power among plural VHF sources |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7879731B2 (enExample) |
| EP (1) | EP1953795A2 (enExample) |
| JP (1) | JP2008187179A (enExample) |
| KR (1) | KR100988704B1 (enExample) |
| SG (1) | SG144875A1 (enExample) |
| TW (1) | TW200845090A (enExample) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI450495B (zh) * | 2009-07-29 | 2014-08-21 | Applied Materials Inc | 用於ｖｈｆ阻抗匹配調節之設備 |
| TWI495034B (enExample) * | 2012-02-01 | 2015-08-01 | ||
| TWI603652B (zh) * | 2012-07-20 | 2017-10-21 | 應用材料股份有限公司 | 用於改良後的射頻偏壓信號穩定之高頻濾波器 |
| TWI606754B (zh) * | 2011-11-22 | 2017-11-21 | 蘭姆研究公司 | 電漿邊緣區域之控制系統與方法 |
| TWI839393B (zh) * | 2018-12-21 | 2024-04-21 | 美商先驅能源工業公司 | 用於調變電漿的電漿處理系統及操作其之方法 |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7858155B2 (en) * | 2004-11-02 | 2010-12-28 | Panasonic Corporation | Plasma processing method and plasma processing apparatus |
| US8317970B2 (en) * | 2008-06-03 | 2012-11-27 | Applied Materials, Inc. | Ceiling electrode with process gas dispersers housing plural inductive RF power applicators extending into the plasma |
| JP5635001B2 (ja) * | 2008-09-26 | 2014-12-03 | ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ | 結合リングをクロック回転させることによって調整可能な静電チャックとホットエッジリングとの間の熱的接触 |
| US8382999B2 (en) * | 2009-03-26 | 2013-02-26 | Applied Materials, Inc. | Pulsed plasma high aspect ratio dielectric process |
| US10586686B2 (en) | 2011-11-22 | 2020-03-10 | Law Research Corporation | Peripheral RF feed and symmetric RF return for symmetric RF delivery |
| CN104024477B (zh) * | 2011-11-23 | 2016-05-18 | 朗姆研究公司 | 多区域气体注入上电极系统 |
| JP2017069209A (ja) * | 2013-02-12 | 2017-04-06 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置の制御方法、プラズマ処理方法及びプラズマ処理装置 |
| KR102053720B1 (ko) | 2013-03-11 | 2019-12-09 | 삼성전자주식회사 | 플라즈마 진단방법 및 장치 |
| JP6574547B2 (ja) | 2013-12-12 | 2019-09-11 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| JP2015162266A (ja) * | 2014-02-26 | 2015-09-07 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| JP2016046357A (ja) * | 2014-08-22 | 2016-04-04 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| US10475626B2 (en) * | 2015-03-17 | 2019-11-12 | Applied Materials, Inc. | Ion-ion plasma atomic layer etch process and reactor |
| US9828672B2 (en) | 2015-03-26 | 2017-11-28 | Lam Research Corporation | Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma |
| RU2626746C1 (ru) * | 2016-02-17 | 2017-07-31 | Федеральное Государственное Унитарное Предприятие "Всероссийский Научно-Исследовательский Институт Физико-Технических И Радиотехнических Измерений" (Фгуп "Вниифтри") | Коаксиальный измерительный резонатор с неизлучающим окном для ввода образца |
| US10026592B2 (en) * | 2016-07-01 | 2018-07-17 | Lam Research Corporation | Systems and methods for tailoring ion energy distribution function by odd harmonic mixing |
| US10748745B2 (en) * | 2016-08-16 | 2020-08-18 | Applied Materials, Inc. | Modular microwave plasma source |
| US10395896B2 (en) | 2017-03-03 | 2019-08-27 | Applied Materials, Inc. | Method and apparatus for ion energy distribution manipulation for plasma processing chambers that allows ion energy boosting through amplitude modulation |
| CN109216144B (zh) * | 2017-07-03 | 2021-08-06 | 中微半导体设备(上海)股份有限公司 | 一种具有低频射频功率分布调节功能的等离子反应器 |
| US10760158B2 (en) | 2017-12-15 | 2020-09-01 | Lam Research Corporation | Ex situ coating of chamber components for semiconductor processing |
| US10555412B2 (en) * | 2018-05-10 | 2020-02-04 | Applied Materials, Inc. | Method of controlling ion energy distribution using a pulse generator with a current-return output stage |
| KR20250110938A (ko) | 2018-10-19 | 2025-07-21 | 램 리써치 코포레이션 | 반도체 프로세싱을 위한 챔버 컴포넌트들의 인 시츄 (in situ) 보호 코팅 |
| JP7481823B2 (ja) * | 2018-11-05 | 2024-05-13 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
| US11804362B2 (en) * | 2018-12-21 | 2023-10-31 | Advanced Energy Industries, Inc. | Frequency tuning for modulated plasma systems |
| US11515123B2 (en) * | 2018-12-21 | 2022-11-29 | Advanced Energy Industries, Inc. | Apparatus and system for modulated plasma systems |
| KR102189323B1 (ko) | 2019-07-16 | 2020-12-11 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
| US20220084794A1 (en) | 2020-09-16 | 2022-03-17 | Applied Materials, Inc. | Plasma chamber with a multiphase rotating modulated cross-flow |
| US12106938B2 (en) * | 2021-09-14 | 2024-10-01 | Applied Materials, Inc. | Distortion current mitigation in a radio frequency plasma processing chamber |
| US20250224478A1 (en) * | 2022-05-13 | 2025-07-10 | Northeastern University | Subharmonic Tags for Localization, Ranging, and Navigation in GPS-Denied Environments |
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| JPH02298024A (ja) | 1989-05-12 | 1990-12-10 | Tadahiro Omi | リアクティブイオンエッチング装置 |
| JPH0781187B2 (ja) | 1989-11-20 | 1995-08-30 | 治久 木下 | 真空プロセス装置 |
| JP2543642B2 (ja) * | 1991-01-18 | 1996-10-16 | アプライド マテリアルズ インコーポレイテッド | 高周波交流電気エネルギ―と相対的に低い周波数の交流電気的エネルギ―を有する、工作物を処理するためのシステムおよび方法 |
| US5900103A (en) | 1994-04-20 | 1999-05-04 | Tokyo Electron Limited | Plasma treatment method and apparatus |
| JP3162583B2 (ja) | 1994-09-30 | 2001-05-08 | 井上 泰宣 | 固体触媒の活性を高める方法および触媒素子 |
| TW580735B (en) | 2000-02-21 | 2004-03-21 | Hitachi Ltd | Plasma treatment apparatus and treating method of sample material |
| JP3377773B2 (ja) | 2000-03-24 | 2003-02-17 | 三菱重工業株式会社 | 放電電極への給電方法、高周波プラズマ発生方法および半導体製造方法 |
| JP3316490B2 (ja) | 2000-03-13 | 2002-08-19 | 三菱重工業株式会社 | 放電電極への給電方法、高周波プラズマ生成方法および半導体製造方法 |
| US6853141B2 (en) * | 2002-05-22 | 2005-02-08 | Daniel J. Hoffman | Capacitively coupled plasma reactor with magnetic plasma control |
| US6875366B2 (en) | 2000-09-12 | 2005-04-05 | Hitachi, Ltd. | Plasma processing apparatus and method with controlled biasing functions |
| JP3670206B2 (ja) | 2000-11-06 | 2005-07-13 | アルプス電気株式会社 | プラズマ処理装置又はプラズマ処理システムの性能評価方法、保守方法、性能管理システム、及び性能確認システム、並びにプラズマ処理装置 |
| JP2002246368A (ja) | 2001-02-14 | 2002-08-30 | Anelva Corp | ウェハー表面径方向均一プラズマを用いるウェハー処理システム |
| US6652713B2 (en) | 2001-08-09 | 2003-11-25 | Applied Materials, Inc. | Pedestal with integral shield |
| JP4417600B2 (ja) | 2001-12-11 | 2010-02-17 | 東京エレクトロン株式会社 | エッチング方法 |
| US6703080B2 (en) | 2002-05-20 | 2004-03-09 | Eni Technology, Inc. | Method and apparatus for VHF plasma processing with load mismatch reliability and stability |
| TWI283899B (en) | 2002-07-09 | 2007-07-11 | Applied Materials Inc | Capacitively coupled plasma reactor with magnetic plasma control |
| JP4370789B2 (ja) * | 2002-07-12 | 2009-11-25 | 東京エレクトロン株式会社 | プラズマ処理装置及び可変インピーダンス手段の校正方法 |
| US7405521B2 (en) | 2003-08-22 | 2008-07-29 | Lam Research Corporation | Multiple frequency plasma processor method and apparatus |
| US7144521B2 (en) * | 2003-08-22 | 2006-12-05 | Lam Research Corporation | High aspect ratio etch using modulation of RF powers of various frequencies |
| US7838430B2 (en) | 2003-10-28 | 2010-11-23 | Applied Materials, Inc. | Plasma control using dual cathode frequency mixing |
| JP4699127B2 (ja) * | 2004-07-30 | 2011-06-08 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| JP4704088B2 (ja) * | 2005-03-31 | 2011-06-15 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP2007005592A (ja) * | 2005-06-24 | 2007-01-11 | Tokyo Electron Ltd | プラズマ処理方法、高速プラズマエッチング装置 |
| US20070246163A1 (en) | 2006-04-24 | 2007-10-25 | Applied Materials, Inc. | Plasma reactor apparatus with independent capacitive and inductive plasma sources |
| JP4646880B2 (ja) * | 2006-09-08 | 2011-03-09 | 東京エレクトロン株式会社 | プラズマエッチング方法及びプラズマエッチング装置 |
-
2007
- 2007-04-11 US US11/733,764 patent/US7879731B2/en not_active Expired - Fee Related
-
2008
- 2008-01-23 KR KR1020080007048A patent/KR100988704B1/ko not_active Expired - Fee Related
- 2008-01-25 SG SG200800721A patent/SG144875A1/en unknown
- 2008-01-28 EP EP08150700A patent/EP1953795A2/en not_active Withdrawn
- 2008-01-29 JP JP2008017173A patent/JP2008187179A/ja active Pending
- 2008-01-30 TW TW097103568A patent/TW200845090A/zh unknown
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI450495B (zh) * | 2009-07-29 | 2014-08-21 | Applied Materials Inc | 用於ｖｈｆ阻抗匹配調節之設備 |
| TWI606754B (zh) * | 2011-11-22 | 2017-11-21 | 蘭姆研究公司 | 電漿邊緣區域之控制系統與方法 |
| TWI646865B (zh) * | 2011-11-22 | 2019-01-01 | 美商蘭姆研究公司 | 電漿邊緣區域之控制系統與方法 |
| TWI700966B (zh) * | 2011-11-22 | 2020-08-01 | 美商蘭姆研究公司 | 電漿邊緣區域之控制系統與方法 |
| TWI495034B (enExample) * | 2012-02-01 | 2015-08-01 | ||
| TWI603652B (zh) * | 2012-07-20 | 2017-10-21 | 應用材料股份有限公司 | 用於改良後的射頻偏壓信號穩定之高頻濾波器 |
| TWI839393B (zh) * | 2018-12-21 | 2024-04-21 | 美商先驅能源工業公司 | 用於調變電漿的電漿處理系統及操作其之方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US7879731B2 (en) | 2011-02-01 |
| EP1953795A2 (en) | 2008-08-06 |
| US20080182416A1 (en) | 2008-07-31 |
| KR100988704B1 (ko) | 2010-10-18 |
| JP2008187179A (ja) | 2008-08-14 |
| KR20080071492A (ko) | 2008-08-04 |
| SG144875A1 (en) | 2008-08-28 |
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